JP2018028133A - Chemical vapor phase impregnation apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate carrying-in/carrying-out of a workpiece, and to uniformize a film thickness of a matrix, in a chemical vapor phase impregnation apparatus.SOLUTION: A chemical vapor phase impregnation apparatus for impregnating and forming a matrix to the surface of a workpiece by a chemical vapor phase impregnation method, includes a reactor having a carrying-in/carrying-out opening of the workpiece formed thereon toward a horizontal direction, and a raw material gas supply unit capable of supplying raw material gas from a first direction and a second direction which is a direction crossing the first direction to the internal of the reactor.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a chemical vapor phase impregnation apparatus.

  In recent years, ceramic matrix composites (CMC) that are lightweight and have high heat resistance have been used in some aircraft and the like. Such CMC is formed by impregnating and forming a matrix made of ceramics into a textile fabric made of silicon carbide (SiC) or carbon (C). As a method for forming a matrix impregnation, for example, as disclosed in Patent Document 1, a chemical vapor infiltration (CVI) method is known. In this chemical vapor impregnation method, a raw material gas is caused to flow along the surface of a heated fiber fabric, and the matrix is impregnated by thermal decomposition of the raw material gas. In the chemical vapor impregnation apparatus for performing such a chemical vapor impregnation method, as in the apparatus for performing chemical vapor deposition shown in Patent Document 2, the inside of the vertical reactor that is long in the vertical direction is used. A plurality of workpieces are arranged in the height direction, and many workpieces are processed at a time by supplying a raw material gas from the lower end of the reactor.

International Publication No. 2015/129772 JP 2012-4246 A

  By the way, when the reaction furnace is a vertical type as described above, when the workpiece is taken in and out, it is necessary to lower the base portion on which the workpiece is placed or raise the container portion surrounding the workpiece. At this time, since a plurality of workpieces are arranged in the height direction, it is necessary to greatly move the base portion or the container portion of the reaction furnace in the height direction. Furthermore, if the reaction furnace is a vertical type, the source gas needs to move greatly in the direction of gravity inside the reaction furnace, and it is difficult to uniformly distribute the source gas throughout the reaction furnace. For this reason, the film thickness of the matrix varies in one workpiece or between a plurality of workpieces.

  The present invention has been made in view of the above-described problems, and it is an object of the present invention to facilitate loading and unloading of workpieces and uniformizing the thickness of a matrix in a chemical vapor impregnation apparatus.

  The present invention adopts the following configuration as means for solving the above-described problems.

  A first invention is a chemical vapor phase impregnation apparatus for impregnating and forming a matrix on the surface of a workpiece by a chemical vapor phase impregnation method, and a reaction furnace in which a loading / unloading opening for the workpiece is formed in a horizontal direction, A configuration is adopted in which a raw material gas supply unit capable of supplying a raw material gas from a first direction and a second direction that intersects the first direction is adopted for the inside of the reaction furnace.

  A second invention adopts a configuration in the first invention in which the first direction and the second direction are horizontal directions.

  According to a third aspect of the present invention, in the first or second aspect of the invention, the source gas is supplied to the reaction furnace from a position opposed to the supply position of the source gas in the reaction furnace with the work placement area interposed therebetween. A configuration is adopted in which an exhaust unit for exhausting the air is provided.

In a fourth aspect based on the third aspect, a plurality of supply positions for the source gas are provided.
A configuration is adopted in which the exhaust unit is provided at a position facing each of the supply positions, and includes an exhaust nozzle for sucking the source gas, and an opening / closing valve provided for each of the plurality of exhaust nozzles.

  According to a fifth invention, in any one of the first to fourth inventions, the source gas supply unit injects the source gas into the reaction furnace from the first direction, and the first injection nozzle. A second injection nozzle that injects the raw material gas into the reaction furnace from two directions, and the first injection nozzle and the second injection nozzle are arranged at positions facing each other across the work placement region. Adopted the configuration that is.

  According to the present invention, the reactor is provided with the carry-in / out opening formed in the horizontal direction. For this reason, by opening the loading / unloading opening and moving the workpiece with a fork device or the like, the workpiece can be easily loaded into and unloaded from the reaction furnace. Further, in the present invention, the raw material gas can be supplied to the reaction furnace from a plurality of directions. For this reason, source gas can be flowed from a different direction with respect to a work, and it can control that variation in the film thickness of a matrix arises inside a reaction furnace. Therefore, according to the present invention, in the chemical vapor phase impregnation apparatus, the work can be easily carried in and out and the thickness of the matrix can be made uniform.

It is a top view which shows schematic structure of the chemical vapor phase impregnation apparatus in one Embodiment of this invention. It is a side view which shows schematic structure of the chemical vapor phase impregnation apparatus in one Embodiment of this invention seen from the A direction of FIG. It is a front view which shows schematic structure of the chemical vapor phase impregnation apparatus in one Embodiment of this invention seen from the B direction of FIG. FIG. 3 is an enlarged cross-sectional view including a reaction furnace corresponding to the CC cross-sectional view in FIG. 2. FIG. 4 is an enlarged cross-sectional view including a reaction furnace corresponding to the DD cross-sectional view in FIG. 3.

  Hereinafter, an embodiment of a chemical vapor phase impregnation apparatus according to the present invention will be described with reference to the drawings. In the following drawings, the scale of each member is appropriately changed in order to make each member a recognizable size.

  FIG. 1 is a plan view showing a schematic configuration of a chemical vapor phase impregnation apparatus 1 of the present embodiment. FIG. 2 is a side view showing a schematic configuration of the chemical vapor impregnation apparatus 1 of the present embodiment as viewed from the direction A of FIG. FIG. 3 is a front view showing a schematic configuration of the chemical vapor impregnation apparatus 1 of the present embodiment as viewed from the direction B of FIG. As shown in these drawings, the chemical vapor impregnation apparatus 1 of the present embodiment includes a reaction furnace 3, an opening / closing mechanism 4, a raw material gas supply unit 5, an exhaust unit 6, and a control unit 8. . 2 and 3, the source gas supply unit 5 and the control unit 8 are not shown.

  The reaction furnace 3 is a furnace that performs chemical vapor impregnation treatment on a workpiece W (see FIGS. 4 and 5) made of a textile fabric, and is installed on the floor surface S. FIG. 4 is an enlarged cross-sectional view including the reaction furnace 3, and corresponds to the CC cross-sectional view in FIG. FIG. 5 is an enlarged cross-sectional view including the reaction furnace 3, and corresponds to a DD cross-sectional view in FIG. As shown in these drawings, the reactor 3 includes a container portion 3a, a leg portion 3b, a heat insulating wall 3c, a heat insulating wall fixing portion 3d, a support portion 3e, a muffle 3f, a mounting table 3g, a heater. And a unit 3h.

  The container portion 3a is a container that houses therein the heat insulating wall 3c, the heat insulating wall fixing portion 3d, the support portion 3e, the muffle 3f, the mounting table 3g, the heater unit 3h, and the like. It has a cylindrical shape. This container part 3a has the trunk | drum 3a1 in which the carrying in / out opening 3a3 of the workpiece | work W was formed in the horizontal direction, and the cover part 3a2 which opens and closes the carrying in / out opening 3a3 of the trunk | drum 3a1. That is, as shown in FIG. 2, the container portion 3 a is a lid portion 3 a 2 that can be opened and closed at one end in the axial direction. Such a container part 3a is formed so that the carry-in / out opening 3a3 faces in the horizontal direction. For this reason, by moving the workpiece W in the horizontal direction, it is possible to put it in and out of the container 3a (that is, the reaction furnace 3). As described above, in the chemical vapor phase impregnation apparatus 1 of the present embodiment, the horizontal reactor 3 in which the axial center of the container portion 3a is in a horizontal posture instead of the reactor in which the axial core has been in a vertical posture. It has.

  The leg 3b protrudes downward from the body 3a1 of the container 3a, and supports the container 3a from below. A plurality of leg portions 3b are provided and arranged on the floor surface S. The heat insulating wall 3c is a heat insulating material in the shape of a hollow box disposed inside the container portion 3a, and covers a heater panel 3h1 described later included in the heater unit 3h from the outside. A front wall 3c1 that is a part of the heat insulating wall 3c and faces the lid 3a2 is detachable from other parts, and is fixed to the lid 3a2. For this reason, the front wall 3c1 is also movable with the movement of the lid 3a2 of the container 3a. Therefore, the box-shaped heat insulating wall 3c can be opened and closed by opening and closing the lid 3a2. Such a heat insulating wall 3c suppresses the heat generated by the heater panel 3h1 from escaping to the outside. The heat insulating wall fixing part 3d connects the inner wall surface of the body part 3a1 of the container part 3a and the heat insulating wall 3c, and the body part 3a1 of the container part 3a is fixed to the container part 3a.

  The support portion 3e is a portion that supports the muffle 3f from below, and is erected upward from the bottom of the trunk portion 3a1. As shown in FIGS. 4 and 5, the muffle 3 f is disposed in the central portion of the reaction furnace 3 in a state of being spaced apart from the inner wall surface from the body portion 3 a 1 by a certain distance. The muffle 3f is a box-shaped part for confining the source gas supplied from the source gas supply unit 5 around the workpiece W, and is arranged so as to surround the arrangement region of the workpiece W.

  A front wall 3f1 which is a part of the muffle 3f and faces the lid 3a2 is detachable from other parts, and is fixed to the lid 3a2 via the front wall 3c1 of the heat insulating wall 3c. ing. For this reason, the front wall portion 3f1 is also movable with the movement of the lid portion 3a2 of the container portion 3a. Therefore, the box-shaped muffle 3f can be opened and closed by opening and closing the lid 3a2.

  Further, the muffle 3f has two side wall portions 3f2 arranged to face each other in the horizontal direction orthogonal to the loading / unloading direction of the workpiece W. These side wall portions 3f2 are double walls including an inner wall 3f3 disposed on the radially inner side of the body portion 3a1 and an outer wall 3f4 disposed on the radially outer side. The inner wall 3f3 and the outer wall 3f4 are opposed to each other with a certain gap, and an exhaust gas introduction space R is formed between the inner wall 3f3 and the outer wall 3f4.

  As shown in FIG. 5, the inner wall 3f3 has a source gas injection hole 3m into which a distal end portion of a source gas injection nozzle 5e described later of the source gas supply unit 5 is fitted, and exhaust gas in the muffle 3f is discharged into the exhaust gas introduction space R. There are provided a plurality of exhaust gas vents 3n for introduction into the exhaust gas. The raw material gas injection holes 3m and the exhaust gas vent holes 3n are alternately arranged in the horizontal direction, and one exhaust gas vent hole 3n is provided with respect to the raw material gas injection holes 3m.

  The source gas injection holes 3m and the exhaust gas vent holes 3n are arranged at the same height and at the same interval on one and the other of the two inner walls 3f3, and the injection direction of the source gas to the muffle 3f (of the workpiece W) When viewed from the horizontal direction orthogonal to the carry-in / out direction), the source gas injection hole 3m and the exhaust gas vent hole 3n provided in one inner wall 3f3 are connected to the source gas injection hole 3m provided in the other inner wall 3f3 and the exhaust gas passage. It arrange | positions so that the pore 3n may overlap.

  The mounting table 3g is a part on which the workpiece W is mounted, and is provided at the bottom of the muffle 3f. The mounting table 3g is supported by the support portion 3e via the muffle 3f. In the present embodiment, as shown in FIGS. 4 and 5, the work W is placed on the shelf Y and the shelf Y is placed inside the reaction furnace 3. For this reason, the workpiece | work W is mounted in the mounting base 3g via the shelf Y. FIG.

  The heater unit 3h includes a plurality of heater panels 3h1, a plurality of electrode bars 3h2, and a power source (not shown). The heater panel 3h1 is formed by meandering a bar-like heat generating portion that generates heat when power is supplied, in a panel shape. As shown in FIGS. 4 and 5, the heater panel 3h1 is interposed between the heat insulating wall 3c and the muffle 3f. Has been placed. The electrode rod 3h2 is for electrically connecting a power source (not shown) and the heater panel 3h1, and is provided through the reaction furnace 3 and the heat insulating wall 3c.

  As shown in FIG. 1, the opening / closing mechanism 4 is a hydraulic mechanism connected to the lid 3 a 2 of the reaction furnace 3, and opens and closes the lid 3 a 2 under the control of the controller 8. As shown in FIG. 1, the source gas supply unit 5 includes a source gas supply unit 5a, a supply pipe 5b, a first supply valve 5c, and a second supply valve 5d. Furthermore, the raw material gas supply unit 5 includes a plurality of raw material gas injection nozzles 5e as shown in FIG. The source gas supply unit 5a pumps the source gas used for the chemical vapor phase impregnation process. The supply pipe 5b is a pipe that connects the source gas supply unit 5a and the source gas injection nozzle 5e. In the present embodiment, the raw material gas injection nozzle 5e includes a root pipe 5b1 connected to the raw material gas supply unit 5a, and a first branch pipe 5b2 and a second branch pipe 5b3 branched into two from the root pipe 5b1. Have.

  The first branch pipe 5b2 is further branched at the tip, and each branched branch is connected to a raw material gas injection nozzle 5e supported by one side wall 3f2 of the muffle 3f. Further, the second branch pipe 5b3 is further branched at the tip portion, and each of the branched branches is connected to the source gas injection nozzle 5e supported by the other side wall portion 3f2 of the muffle 3f.

  The first supply valve 5 c is installed in the middle of the first branch pipe 5 b 2 and opens and closes the first branch pipe 5 b 2 under the control of the control unit 8. The second supply valve 5d is installed in the middle of the second branch pipe 5b3, and opens and closes the second branch pipe 5b3 under the control of the control unit 8.

  The raw material gas injection nozzle 5e passes through the body 3a1 of the reaction furnace 3, the heat insulating wall 3c, and the outer wall 3f4 of the muffle 3f, and the tip is fitted into the raw material gas injection hole 3m formed in the inner wall 3f3 of the muffle 3f. Are combined. The source gas injection nozzle 5e is provided for each source gas injection hole 3m. These source gas injection nozzles 5e inject the source gas supplied from the source gas supply unit 5a via the supply pipe 5b in the horizontal direction toward the inside of the muffle 3f (that is, the workpiece W).

  As described above, when viewed from the injection direction of the source gas into the muffle 3f (horizontal direction orthogonal to the loading / unloading direction of the workpiece W), the source gas injection hole 3m provided in one inner wall 3f3 has the other It arrange | positions so that it may overlap with the raw material gas injection hole 3m provided in the inner wall 3f3. Therefore, the raw material gas injection nozzle 5e (first injection nozzle) attached to one inner wall 3f3 and the raw material gas injection nozzle 5e (second injection nozzle) attached to the other inner wall 3f3 are mounted on the workpiece W. It is arranged at a position facing directly across the placement area.

  The exhaust unit 6 includes an exhaust pump 6a, an exhaust pipe 6b, a first exhaust valve 6c (open / close valve), a second exhaust valve 6d (open / close valve), and an exhaust nozzle 6e. The exhaust pump 6 a exhausts gas from the inside of the reaction furnace 3. The exhaust pipe 6b is a pipe that connects the exhaust pump 6a and the reaction furnace 3, and includes a root pipe 6b1, a first branch pipe 6b2, and a second branch pipe 6b3. The root pipe 6b1 is connected to the exhaust pump 6a and is branched into a first branch pipe 6b2 and a second branch pipe 6b3. The first branch pipe 6b2 is connected to an exhaust nozzle 6e supported on one side wall 3f2 of the muffle 3f. The second branch pipe 6b3 is connected to an exhaust nozzle 6e supported on the other side wall 3f2 of the muffle 3f.

  The first exhaust valve 6 c is installed in the middle of the first branch pipe 6 b 2 and opens and closes the first branch pipe 6 b 2 under the control of the control unit 8. The second exhaust valve 6d is installed in the middle of the second branch pipe 6b3, and opens and closes the second branch pipe 6b3 under the control of the control unit 8. The exhaust nozzle 6e is disposed so as to pass through the body portion 3a1 of the reaction furnace 3 and the heat insulating wall 3c, and the tip thereof faces the exhaust gas introduction space R of the muffle 3f.

  The control unit 8 controls the entire chemical vapor impregnation apparatus 1 of the present embodiment. In the present embodiment, for example, the flow direction of the raw material gas in the reaction furnace 3 is changed after a predetermined time has elapsed. For example, the control unit 8 opens the first supply valve 5c, opens the first branch pipe 5b2 of the supply pipe 5b, and closes the second supply valve 5d for a certain time after the chemical vapor impregnation process is started. The second branch pipe 5b3 of the supply pipe 5b is closed. After a predetermined time has elapsed, the control unit 8 closes the first supply valve 5c, closes the first branch pipe 5b2 of the supply pipe 5b, opens the second supply valve 5d, and opens the second branch pipe 5b3 of the supply pipe 5b. To do. Further, when opening the first supply valve 5c, the control unit 8 closes the first exhaust valve 6c and opens the second exhaust valve 6d. Further, when opening the second supply valve 5d, the control unit 8 opens the first exhaust valve 6c and closes the second exhaust valve 6d.

  Subsequently, the operation of the chemical vapor infiltration apparatus 1 of the present embodiment having such a configuration will be described. First, the lid 3a2 of the reaction furnace 3 is opened by the opening / closing mechanism 4, and the loading / unloading opening 3a3 of the reaction furnace 3 is opened in the horizontal direction. When the loading of the workpiece W is completed, the lid 3a2 is closed by the opening / closing mechanism 4.

  When the lid 3a2 is closed, for example, an inert gas is supplied into the container 3a of the reaction furnace 3 by a purge unit (not shown). At this time, the exhaust pump 6a is driven under the control of the control unit 8, and the air in the container 3a is discharged to the outside. When the replacement in the container 3a is completed, the inside of the container 3a is heated by the heater unit 3h under the control of the controller 8.

  When the heating is completed, the source gas is supplied into the muffle 3f under the control of the control unit 8. As the source gas flows along the surface of the heated work W, the work W is impregnated with a matrix.

  For example, when the first branch pipe 5b2 of the supply pipe 5b is opened and the second branch pipe 5b3 of the supply pipe 5b is closed, the raw material gas injection nozzle 5e provided on one side wall 3f2 of the muffle 3f. Is supplied to the inside of the inner wall 3f3. This source gas is injected in a horizontal direction at a predetermined flow velocity, flows along the workpiece W, and then flows into the exhaust gas introduction space R from the exhaust gas vent 3n formed in the other side wall 3f2. At this time, since the second exhaust valve 6d is opened, the exhaust gas introduction space R is discharged to the outside of the reaction furnace 3 by the exhaust pump 6a.

  Further, when the first branch pipe 5b2 of the supply pipe 5b is closed and the second branch pipe 5b3 of the supply pipe 5b is opened, the raw material gas injection nozzle 5e provided on the other side wall 3f2 of the muffle 3f. Is supplied to the inside of the inner wall 3f3. This source gas is injected in the horizontal direction and flows along the workpiece W, and then flows into the exhaust gas introduction space R from the exhaust gas vent 3n formed in the one side wall portion 3f2. At this time, since the first exhaust valve 6c is opened, the exhaust gas introduction space R is discharged to the outside of the reaction furnace 3 by the exhaust pump 6a.

  In the chemical vapor phase impregnation apparatus 1 of the present embodiment, the control unit 8 changes the open / closed state of the first branch pipe 5b2 and the second branch pipe 5b3 as described above, so that the source gas in the reaction furnace 3 is changed. Change the flow direction. After the matrix is impregnated and formed on the workpiece W, the lid 3a2 is opened, and the workpiece W inside the reaction furnace 3 is carried out.

  According to the chemical vapor phase impregnation apparatus 1 of the present embodiment as described above, there are provided three reaction furnaces in which the carry-in / out opening 3a3 is formed in the horizontal direction. For this reason, the work W can be easily carried into and out of the reaction furnace 3 by opening the carry-in / out opening 3a3 and moving the work W in the horizontal direction. Furthermore, in the chemical vapor phase impregnation apparatus 1 of the present embodiment, the raw material gas can be supplied to the reaction furnace 3 from a plurality of directions. For this reason, source gas can be flowed from a different direction (the 1st direction and the 2nd direction) to work W, and it can control that variation in the film thickness of a matrix arises. Therefore, according to the chemical vapor phase impregnation apparatus 1 of the present embodiment, the workpiece W can be easily carried in and out, and the film thickness of the matrix formed by the chemical vapor phase impregnation method can be made uniform.

  Further, in the chemical vapor phase impregnation apparatus 1 of the present embodiment, the raw material gas is supplied into the reaction furnace 3 in the horizontal direction. For this reason, source gas can flow along work W, without changing a direction. Therefore, the flow of the source gas inside the muffle 3f can be stabilized, and the thickness of the matrix formed on the surface of the workpiece W can be made more uniform.

  Further, in the chemical vapor phase impregnation apparatus 1 of the present embodiment, the position facing the supply position of the source gas in the reaction furnace 3 (the tip position of the source gas injection nozzle 5e) across the placement area of the workpiece W. An exhaust unit 6 is provided for exhausting the source gas to the outside of the reaction furnace 3 from the (tip position of the exhaust nozzle 6e). For this reason, the flow of the source gas in the work W mounting region can be further stabilized, and the thickness of the matrix can be made more uniform.

  In addition, the chemical vapor phase impregnation apparatus 1 of the present embodiment includes the exhaust nozzle 6e disposed with the work W mounting area interposed therebetween, and an exhaust valve (first exhaust valve) corresponding to each exhaust nozzle 6e. 6c and a second exhaust valve 6d). For this reason, in either case where the source gas is ejected from the side wall portion 3f2 side, or in the case where the source gas is ejected from the other side wall portion 3f2, the source material is introduced from a position opposite to the source gas ejection position. Gas can be inhaled. Therefore, the flow of the source gas in the work W mounting region can be further stabilized, and the thickness of the matrix can be made more uniform.

  Furthermore, in the chemical vapor phase impregnation apparatus 1 of the present embodiment, the raw material gas injection nozzle 5e (first injection nozzle) attached to one inner wall 3f3 and the raw material gas injection nozzle 5e (first injection nozzle 5e) attached to the other inner wall 3f3 ( The (second injection nozzle) is disposed at a position facing directly across the placement area of the workpiece W. For this reason, it is possible to prevent the source gas injected from the source gas injection nozzle 5e from flowing straight into the exhaust gas introduction space R through the exhaust gas vent 3n as it is. For this reason, the source gas can be retained in the muffle 3f for a long period of time, and the matrix can be formed more efficiently.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the said embodiment. Various shapes, combinations, and the like of the constituent members shown in the above-described embodiments are examples, and various modifications can be made based on design requirements and the like without departing from the spirit of the present invention.

  For example, in the above embodiment, the configuration in which the source gas supply unit 5 can supply the source gas to the reaction furnace 3 from two horizontal directions has been described. However, the present invention is not limited to this, and it is possible to adopt a configuration including a source gas supply unit that can supply source gas to the reaction furnace 3 from above and below. As described above, in the present invention, although the source gas can be supplied to the reaction furnace 3 from a plurality of directions, the supply direction is not particularly limited as long as the supply direction intersects.

  Moreover, in the said embodiment, the structure provided in two places so that the exhaust nozzle 6e might oppose the raw material gas injection nozzle 5e was demonstrated. However, the present invention is not limited to this, and an exhaust nozzle may be installed at any one of the locations, and the source gas may be discharged from the exhaust nozzle to the outside.

DESCRIPTION OF SYMBOLS 1 Chemical vapor impregnation apparatus 3 Reactor 3a Container part 3a1 Trunk part 3a2 Cover part 3a3 Loading / unloading opening 3b Leg part 3c Thermal insulation wall 3c1 Front wall part 3d Thermal insulation wall fixing part 3e Support part 3f Muffle 3f1 Front wall part 3f2 Side wall part 3f3 Inner wall 3f4 Outer wall 3g Mounting table 3h Heater unit 3h1 Heater panel 3h2 Electrode rod 3m Raw material gas injection hole 3n Exhaust gas vent 4 Opening / closing mechanism 5 Raw material gas supply unit 5a Raw material gas supply part 5b Supply pipe 5b1 Base pipe 5b2 First branch pipe 5b3 First 2 branch pipe 5c first supply valve 5d second supply valve 5e raw material gas injection nozzle 6 exhaust unit 6a exhaust pump 6b exhaust pipe 6b1 root pipe 6b2 first branch pipe 6b3 second branch pipe 6c first exhaust valve 6d second exhaust valve 6e Exhaust nozzle 8 Control part R Exhaust gas introduction space S Floor W Work Y Shelf

Claims (5)

A chemical vapor impregnation apparatus for impregnating and forming a matrix on the surface of a workpiece by a chemical vapor impregnation method,
A reaction furnace in which a loading / unloading opening for the workpiece is formed in a horizontal direction;
A chemical vapor phase comprising: a raw material gas supply unit capable of supplying a raw material gas from a first direction and a second direction that intersects the first direction with respect to the inside of the reaction furnace. Impregnation equipment.   The chemical vapor impregnation apparatus according to claim 1, wherein the first direction and the second direction are horizontal directions.   An exhaust unit that exhausts the source gas to the outside of the reactor from a position facing the supply position of the source gas in the reactor across the work placement region. 3. The chemical vapor phase impregnation apparatus according to 1 or 2. A plurality of supply positions of the source gas are provided,
The exhaust unit is
An exhaust nozzle that is provided at a position facing each of the supply positions and sucks the source gas;
The chemical vapor impregnation apparatus according to claim 3, further comprising: an open / close valve provided according to each of the plurality of exhaust nozzles. The source gas supply unit includes a first injection nozzle that injects the source gas into the reaction furnace from the first direction, and a second injection that injects the source gas into the reaction furnace from the second direction. A nozzle,
The chemical vapor phase according to any one of claims 1 to 4, wherein the first injection nozzle and the second injection nozzle are disposed at positions facing each other across the placement area of the workpiece. Impregnation equipment.

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