JP2018002583A5 - Transistor and display device - Google Patents

Claims (7)

A transistor having a metal oxide in a channel region, wherein
The metal oxide has a first region and a second region,
The first region includes In, Ga and Zn.
The second region includes In, Ga and Zn.
The first region has a lower conduction band lower end of the energy band than the second region,
The first region has more carriers than the second region. A transistor having a metal oxide in a channel region, wherein
The metal oxide has a first region and a second region,
The first region includes In, Ga and Zn.
The second region includes In, Ga and Zn.
The first region has a lower conduction band lower end of the energy band than the second region,
The first region has more carriers than the region where the lower end of the conduction band is high,
The first region and the second region have different valence band positions. In claim 1 or claim 2,
The second region has a higher concentration of Ga than the first region, and the first region has a higher concentration of In than the second region. In any one of claims 1 to 3,
The transistor, wherein the metal oxide has particles with a diameter of 0.5 nm or more and 10 nm or less. A display device comprising the transistor according to any one of claims 1 to 4;
The display device includes a display portion on a substrate and a driver for driving the display portion.
The display device, wherein the driver comprises the transistor. A display device comprising the transistor according to any one of claims 1 to 4;
The display device includes a scan line driving circuit and a display portion over a substrate,
The display device, wherein the scan line drive circuit includes the transistor. A display device comprising the transistor according to any one of claims 1 to 4;
The display device includes a signal line driver circuit and a display portion on a substrate,
The display device, wherein the signal line drive circuit includes the transistor.