JP2017188532A - Anisotropic conductive member, method of manufacturing the same, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an anisotropic conductive member which can be easily manufactured, and a method of manufacturing the same.SOLUTION: An anisotropic conductive member 10 includes an organic insulating film 12 and a conductor part 14 penetrating the organic insulating film 12 in the thickness direction, and the conductor part 14 contains particles containing copper. The method of manufacturing the anisotropic conductive member 10 includes the steps of: forming a through via penetrating the organic insulating film 12 in the thickness direction; and arranging the particles containing copper in the through via to form the conductor part 14.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to an anisotropic conductive member, a method for manufacturing the same, and a semiconductor device.

  2. Description of the Related Art In recent years, semiconductor packages having various forms have been proposed as electronic components have been improved in performance and functionality. As the semiconductor package, for example, a semiconductor chip (semiconductor element) and a semiconductor chip mounting support member are bonded, and an adhesive is used for the bonding.

  In recent years, in the semiconductor mounting field, a flip chip mounting method in which semiconductor chips are connected to each other and / or a semiconductor chip and a support member for mounting a semiconductor chip are connected via a plurality of conductive bumps has attracted attention. ing. In the flip chip mounting method, abnormalities may occur in the connection between the substrate and the semiconductor chip via the conductive bumps due to stress based on the difference in thermal expansion coefficient of each connected member. For this reason, a method is known in which conductive bumps are sealed by filling a resin (underfill material) between connected members in order to alleviate the stress (for example, see Patent Document 1 below). ).

  Furthermore, since the diameter and pitch of the bumps applied to the semiconductor chip are fine, it is difficult to align when connecting, and the yield is greatly reduced. In order to solve such problems, after connecting the substrate and the semiconductor chip when connecting by heating or pressing, the chip is temporarily fixed on the substrate at a temperature lower than the connection temperature. Thereafter, a process of thermocompression bonding while raising the temperature to the connection temperature may be used (for example, see Non-Patent Document 1 below). In addition, it has been studied to suppress a positional shift by inserting a bump into a via formed using a photosensitive material (see, for example, Patent Document 2 below).

Japanese Patent No. 3999840 Japanese Patent Laying-Open No. 2015-173196

Proceedings of 2009 Electronic Components and Technology Conference, 11-13 (2009).

  By the way, the conductive member that electrically connects the connected members is required to be easily manufactured from the viewpoint of further improving the yield of the semiconductor device or the like.

  An object of this indication is to provide the anisotropic conductive member which can be manufactured simply, and its manufacturing method. Another object of the present disclosure is to provide a semiconductor device using the anisotropic conductive member.

  1st aspect of this indication is an anisotropic conductive member provided with the organic insulating film and the conductor part which penetrates the said organic insulating film in the thickness direction, and the said conductor part contains the particle | grains containing copper. .

  The anisotropic conductive member according to the first aspect can be easily manufactured without performing sputtering, etching, or the like because the conductor portion can be obtained using particles containing copper. According to such an anisotropic conductive member, a semiconductor device can be manufactured with a high yield. Moreover, according to the anisotropic conductive member which concerns on a 1st aspect, while being able to refine | miniaturize a conductor part easily, even when it is a case where a connection part has a fine structure, the connection failure by a position shift is carried out. Can be suppressed. Furthermore, according to the anisotropic conductive member which concerns on a 1st aspect, since a fine conductor part can be formed in an organic insulating film, an anisotropic conductive member can be provided with a roll form.

  The anisotropic conductive member which concerns on a 1st aspect WHEREIN: It is preferable that the thickness of the said organic insulating film is 1-20 micrometers. The average particle diameter of the particles is preferably 0.02 to 3 μm. The organic insulating film preferably includes a cured product of a photosensitive insulating film.

  A second aspect of the present disclosure is a semiconductor device including the anisotropic conductive member according to the first aspect and a semiconductor chip disposed on at least one surface of the anisotropic conductive member.

  A third aspect of the present disclosure includes a step of forming a through via that penetrates the organic insulating film in the thickness direction, and a step of forming a conductor portion by arranging particles containing copper in the through via. It is a manufacturing method of an anisotropic conductive member.

  According to the method for manufacturing the anisotropic conductive member according to the third aspect, the anisotropic conductive member can be easily manufactured. By using the anisotropic conductive member manufactured by such an anisotropic conductive member manufacturing method, the semiconductor device can be manufactured with high yield. According to the method for manufacturing the anisotropic conductive member according to the third aspect, the same effect as the anisotropic conductive member according to the first aspect can be obtained.

  The anisotropic conductive member manufacturing method according to a third aspect is an aspect in which the organic insulating film is a photosensitive insulating film, and the through via is formed by exposing and developing the organic insulating film. Also good.

  According to this indication, an anisotropic conductive member which can be manufactured simply, and its manufacturing method can be provided. According to the present disclosure, it is possible to provide a semiconductor device using the anisotropic conductive member.

It is sectional drawing which shows an example of an anisotropic conductive member. It is sectional drawing which shows an example of the manufacturing method of an anisotropically-conductive member. It is sectional drawing which shows an example of the manufacturing method of an anisotropically-conductive member. It is sectional drawing which shows an example of the manufacturing method of an anisotropically-conductive member. It is sectional drawing which shows an example of a semiconductor device. It is sectional drawing which shows the other example of a semiconductor device.

  Hereinafter, a form for carrying out this indication is explained in detail, referring to drawings if needed. However, the present disclosure is not limited to the following embodiment. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified, and the dimensional ratio in the drawing is not limited to the illustrated ratio.

<Anisotropic conductive member>
The anisotropic conductive member according to the present embodiment includes an organic insulating film and a conductor portion (penetrating conductor) that penetrates the organic insulating film in the thickness direction, and the conductor portion is copper particles (particles containing copper. The same). The conductor portion is disposed (for example, filled) in a through via formed in the organic insulating film.

“Penetration” means a state in which the conductor portions are exposed on both surfaces of the organic insulating film. “Insulation” means that the volume resistivity is 1.0 × 10 ⁶ Ω · cm or more. The volume resistivity is a value calculated from a surface resistance value measured by a four-end needle surface resistance measuring instrument and a film thickness measured by a non-contact surface / layer cross-sectional shape measurement system (VertScan, Ryoka System Co., Ltd.). .

  Although the usage method of an anisotropically conductive member is not specifically limited, It can be used as an electrode layer, a wiring layer, a power feeding layer, an electromagnetic wave shielding layer, a heat radiation layer formation, an interelectrode connecting material, and the like.

  FIG. 1 is a cross-sectional view illustrating an example of an anisotropic conductive member. An anisotropic conductive member 10 shown in FIG. 1 includes an organic insulating film 12 and a plurality of conductor portions 14 penetrating the organic insulating film 12 in the thickness direction, and the conductor portions 14 contain copper particles. Each of the plurality of conductor portions 14 is disposed away from each other in a direction perpendicular to the thickness direction of the organic insulating film 12. The plurality of conductor portions 14 may be regularly arranged in a direction perpendicular to the thickness direction of the organic insulating film 12 or may be irregularly arranged.

(Organic insulation film)
The organic insulating film can contain a photosensitive resin composition and / or a cured product thereof. The aspect which is a photosensitive insulating film containing the photosensitive resin composition may be sufficient as an organic insulating film, and the aspect containing the hardened | cured material of a photosensitive insulating film may be sufficient as it. The organic insulating film preferably contains a cured product of the photosensitive insulating film. By forming an organic insulating film using the photosensitive resin composition (the organic insulating film is made of a photosensitive insulating film), a through via having a higher definition and a smooth side wall is formed. Can do.

  The photosensitive insulating film is not particularly limited, but is preferably a negative photosensitive insulating film from the viewpoint of excellent mechanical properties and heat resistance.

  The photosensitive resin composition is preferably a negative photosensitive resin composition from the viewpoint of excellent heat resistance and handleability during film formation. In addition, examples of the photosensitive resin composition (photocurable resin composition) include a composition containing a photoacid generator and a photoradical initiator, but from the viewpoint of easily obtaining a fine pattern, A composition containing a photoacid generator is preferred. From the above viewpoint, the photosensitive resin composition is preferably a negative photosensitive resin composition containing a photoacid generator.

  The photoacid generator is not particularly limited as long as it is a compound that generates an acid by light irradiation. For example, an onium salt compound or a sulfonimide compound is preferably used from the viewpoint of efficiently generating an acid. A photo-acid generator can be used individually by 1 type or in combination of 2 or more types.

  Specific examples of the onium salt compound include iodonium salts and sulfonium salts. Specific examples of onium salt compounds include diphenyliodonium trifluoromethanesulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium hexafluoroantimonate, diphenyliodonium hexafluorophosphate, diphenyliodonium tetrafluoroborate and the like diaryliodonium salts; Triarylsulfonium salts such as lomethanesulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium hexafluoroantimonate; 4-t-butylphenyl-diphenylsulfonium p-toluenesulfonate; 4,7-di-n-butoxynaphthyltetrahydro Thiophenium trifluoromethanesulfonate, etc. And the like.

  Specific examples of the sulfonimide compound include N- (trifluoromethylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) phthalimide, N- (trifluoromethylsulfonyloxy) diphenylmaleimide, N- (trifluoromethylsulfonyl). Oxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (trifluoromethylsulfonyloxy) naphthalimide, N- (p-toluenesulfonyloxy) -1,8-na Examples thereof include phthalimide and N- (10-camphorsulfonyloxy) -1,8-naphthalimide.

  As the photoacid generator, a compound having a trifluoromethanesulfonate group, a hexafluoroantimonate group, a hexafluorophosphate group or a tetrafluoroborate group is preferably used from the viewpoint of excellent resolution.

  The photosensitive resin composition is preferably soluble in a 2.38 mass% tetramethylammonium aqueous solution, and contains a compound having a phenolic hydroxyl group from the viewpoint of excellent resolution, storage stability, and insulation reliability. It is preferable to do. Examples of the compound having a phenolic hydroxyl group include phenol / formaldehyde condensed novolak resin, cresol / formaldehyde condensed novolak resin, phenol-naphthol / formaldehyde condensed novolak resin, polyhydroxystyrene and its polymer, phenol-xylylene glycol condensed resin, cresol- Examples thereof include a xylylene glycol condensation resin and a phenol-dicyclopentadiene condensation resin. Here, the term “soluble” means that it is immersed in a 2.38 mass% tetramethylammonium aqueous solution at 25 ° C. for 1 minute to dissolve 10 mass% or more. The compound which has a phenolic hydroxyl group can be used individually by 1 type or in combination of 2 or more types.

  It is preferable that the photosensitive resin composition contains a thermosetting resin. Thermosetting resins include acrylate resins, epoxy resins, cyanate ester resins, maleimide resins, allyl nadiimide resins, phenol resins, urea resins, melamine resins, alkyd resins, unsaturated polyester resins, diallyl phthalate resins, silicone resins, resorcinol. Examples include formaldehyde resin, triallyl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triallyl trimellitate, thermosetting resin synthesized from cyclopentadiene, and the like. However, from the viewpoint of excellent resolution, insulation reliability, and adhesion to metal, a compound having any of a methylol group, an alkoxyalkyl group, and a glycidyl group is preferable. A thermosetting resin can be used individually by 1 type or in combination of 2 or more types.

  From the viewpoint of excellent resolution, storage stability, and insulation reliability, the photosensitive resin composition is composed of (A) a photoacid generator, (B) a compound having a phenolic hydroxyl group (hereinafter, “(B ) Component ”) and (C) a thermosetting resin.

  The resin composition for obtaining the organic insulating film can contain an adhesion assistant. As the adhesion assistant, a silane coupling agent, a triazole compound, a tetrazole compound, or the like can be used.

  As the silane coupling agent, a compound having a nitrogen atom is preferably used from the viewpoint of improving the adhesion to the conductor portion. Specific examples of the silane coupling agent include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, and 3-aminopropyl. Trimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris- (trimethoxysilyl) Propyl) isocyanurate, 3-ureidopropyltrialkoxysilane, 3-isocyanatopropyltriethoxysilane and the like. The amount of the silane coupling agent to be used is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (B) from the viewpoint of excellent effects of addition, heat resistance, cost, and the like.

  Examples of the triazole compound include 2- (2′-hydroxy-5′-methylphenyl) benzotriazole, 2- (2′-hydroxy-3′-tert-butyl-5′-methylphenyl) -5-chlorobenzotriazole, 2- (2′-hydroxy-3 ′, 5′-di-tert-amylphenyl) benzotriazole, 2- (2′-hydroxy-5′-tert-octylphenyl) benzotriazole, 2,2′-methylenebis [ 6- (2H-benzotriazol-2-yl] -4-tert-octylphenol], 6- (2-benzotriazolyl) -4-tert-octyl-6′-tert-butyl-4′-methyl-2 , 2′-methylenebisphenol, 1,2,3-benzotriazole, 1- [N, N-bis (2-ethylhexyl) a Nomethyl] benzotriazole, carboxybenzotriazole, 1- [N, N-bis (2-ethylhexyl) aminomethyl) methylbenzotriazole, 2,2 ′-[[(methyl-1H-benzotriazol-1-yl) methyl] Imino] bisethanol and the like.

  Examples of tetrazole compounds include 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 1-methyl-5-ethyl-1H-tetrazole, and 1-methyl-5. -Mercapto-1H-tetrazole, 1-phenyl-5-mercapto-1H-tetrazole, 1- (2-dimethylaminoethyl) -5-mercapto-1H-tetrazole, 2-methoxy-5- (5-trifluoromethyl- 1H-tetrazol-1-yl) -benzaldehyde, 4,5-di (5-tetrazolyl)-[1,2,3] triazole, 1-methyl-5-benzoyl-1H-tetrazole and the like.

  The use amount of each of the triazole compound and the tetrazole compound is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (B) from the viewpoint of excellent effects of addition, heat resistance, cost, and the like.

  Each of these silane coupling agents, triazole compounds and tetrazole compounds can be used alone or in combination of two or more.

  The resin composition for obtaining an organic insulating film can also contain an ion scavenger. Adsorption of ionic impurities by the ion scavenger improves insulation reliability during moisture absorption. The ion scavenger is not particularly limited, for example, triazine thiol compound, phenolic reducing agent, etc., a compound known as a copper damage preventing agent for preventing copper from ionizing and dissolving, a powder form Inorganic compounds such as bismuth-based, antimony-based, magnesium-based, aluminum-based, zirconium-based, calcium-based, titanium-based, and tin-based, and mixed systems thereof.

  Specific examples of the ion scavenger are not particularly limited. For example, trade names: IXE-300 (antimony), IXE-500 (bismuth), IXE-, which are inorganic ion scavengers manufactured by Toa Gosei Co., Ltd. 600 (antimony and bismuth mixed system), IXE-700 (magnesium and aluminum mixed system), IXE-800 (zirconium based), and IXE-1100 (calcium based). An ion scavenger can be used individually by 1 type or in combination of 2 or more types. The use amount of the ion scavenger is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the component (B) from the viewpoint of the effect of addition, heat resistance, cost, and the like.

  The resin composition for obtaining the organic insulating film can appropriately contain a curing agent, a curing accelerator, a filler and the like.

  The resin composition for obtaining the organic insulating film may contain a solvent. The solvent to be used is not particularly limited, and examples thereof include ethyl lactate, N-methylpyrrolidinone, cyclohexanone, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and the like.

  The thickness of the organic insulating film is preferably 1 to 20 μm from the viewpoint of excellent handleability, more preferably 15 μm or less from the viewpoint of reducing the thickness of the semiconductor device, and a viewpoint of obtaining a finer conductor portion. To 10 μm or less. The thickness of the organic insulating film is preferably 2 μm or more from the viewpoint of excellent handleability of the film. From these viewpoints, the thickness of the organic insulating film is preferably 2 to 10 μm.

(Conductor part)
The conductor portion contains copper particles. The copper particles only need to contain copper, and may be particles made of copper.

  The length of the conductor part in the thickness direction of the organic insulating film is preferably 1 to 10 μm from the viewpoint of further improving the yield. The length of the conductor portion is preferably 2 to 10 μm from the viewpoint of easily obtaining a uniform conductor. The length of the conductor portion is preferably 1 to 7 μm from the viewpoint of thinning.

  The length (diameter) of the conductor portion in the direction perpendicular to the thickness direction of the organic insulating film is preferably 1 to 20 μm from the viewpoint of further improving the yield. The length of the conductor is preferably 1 to 10 μm from the viewpoint of easy miniaturization. The length of the conductor part is preferably 2 to 20 μm from the viewpoint of excellent particle filling. The said length of a conductor part means the longest length among the lengths of the conductor part in the direction perpendicular | vertical to the thickness direction of an organic insulating film.

  The average particle size of the copper particles is preferably 3 μm or less from the viewpoint of excellent sinterability, more preferably 2 μm or less from the viewpoint of excellent filling rate to the through vias, and further fine through vias. From the viewpoint of filling, it is more preferably 1 μm or less. The average particle diameter of the copper particles is preferably 0.02 μm or more from the viewpoint of excellent handleability, and more preferably 0.05 μm or more from the viewpoint of obtaining low electrical resistance. From these viewpoints, the average particle diameter of the copper particles is preferably 0.02 to 3 μm, and more preferably 0.05 to 1 μm. The “average particle size” is an arithmetic average value of the length of the major axis measured for 200 particles selected at random.

  The copper particles can be used in combination with copper particles having a plurality of particle sizes so as to satisfy the average particle size, and there may be two peaks of the number-converted value of the frequency distribution of the average particle size. By using in combination in this way, it can be mixed so as to have a close-packed structure.

  Although it does not specifically limit as a copper particle, The particle | grains covered with the surface protection material for suppressing oxidation can be used. As a material to be mixed with copper particles, a thermosetting resin may be contained in order to improve the adhesion between the conductor portion and the organic insulating film.

(Other)
The anisotropic conductive member according to the present embodiment can further include a member including an organic insulator different from the organic insulating film; an inorganic insulator; a barrier metal or the like between the organic insulating film and the conductor portion.

<Method for manufacturing anisotropic conductive member>
The method for manufacturing an anisotropic conductive member according to the present embodiment includes a via formation step of forming a through via that penetrates the organic insulating film in the thickness direction, and a conductor portion that forms a conductor portion by arranging copper particles in the through via. Forming step. The method for manufacturing the anisotropic conductive member according to the present embodiment may further include a film manufacturing process for manufacturing an organic insulating film before the via forming process.

  2-4 is sectional drawing which shows an example of the manufacturing method of an anisotropically conductive member. First, as shown in FIG. 2, in the film production process, the organic insulating film 12 is formed on the peelable substrate 16. Next, as shown in FIG. 3, through vias 18 are formed in the organic insulating film 12 in the via formation step. Then, as shown in FIG. 4, the conductor part 14 containing a copper particle is formed in a conductor part formation process. Thereby, the anisotropic conductive member 10 arrange | positioned on the base material 16 is obtained.

  A film preparation process is a process of apply | coating a resin composition on a base material and producing an organic insulating film, for example. As the substrate, it is preferable to use a substrate from which the anisotropic conductive member can be peeled. Here, “peelable” means that the strength for peeling the anisotropic conductive member from the substrate is a peel strength of 0.5 kN / m or less. Using a sample obtained by cutting an anisotropic conductive member formed on a substrate into a width of 10 mm and a length of 30 mm, and measuring with a small tabletop testing machine EZ-S (manufactured by Shimadzu Corporation) at a feed rate of 50 mm / min. The average value is the peel strength.

  The base material that can be peeled is not particularly limited. For example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, methylpentene film, silicone-based, A base material treated with a release agent such as a silica-based material can be used.

  When the resin composition contains a solvent, it is preferable to heat-treat for drying the solvent after coating the resin composition. Although heating temperature is not specifically limited, It can implement at 40-150 degreeC. Heating time can be implemented in 1 to 30 minutes.

  When the resin composition is a photosensitive resin composition, an organic insulating film (photosensitive insulating film) containing the photosensitive resin composition can be obtained in the film production process. When the organic insulating film is a photosensitive insulating film, the through via can be formed by exposing and developing the photosensitive insulating film in the via forming step.

  The through via is preferably formed by exposure / development. The exposure is preferably performed using a roll-to-roll projection exposure apparatus. The developer component used for development includes ethyl lactate, cyclohexanone, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxide, sodium carbonate Is preferably used.

  In the conductor portion forming step, the conductor portion can be formed by filling the through vias with copper particles. A method for filling the through via is not particularly limited, and examples thereof include roll coating, comma coating, gravure coating, knife coating, die coating, bar coating, printing, and spray coating. The inside of the via can be depressurized in order to improve the filling property to the through via.

  In the conductor portion forming step, it is preferable to use copper particles dispersed in a solvent from the viewpoint of improving the filling properties of the copper particles into the through vias. Although it does not specifically limit as a solvent, The compound of the boiling point of 200 degrees C or less which has an alcohol group, ester group, an amino group, etc. can be used.

  The copper particles can be sintered after filling the through vias. Examples of the sintering method include sintering by heating and light sintering by xenon flash. In the case of sintering by heating, it can be performed in the air, in a nitrogen atmosphere, in the presence of hydrogen, or in the presence of an acid.

  The sintering temperature is preferably 80 to 200 ° C. from the viewpoint of easily reducing the stress, more preferably 120 to 200 ° C. from the viewpoint of reducing the volume resistance value, and a dense porous metal. From the viewpoint of obtaining, it is more preferably 120 to 180 ° C.

  The filling rate of the conductor portion can be improved by plating after filling the through vias with copper particles.

  After filling the through vias with copper particles, an adhesive paste can be applied to improve the adhesion between the conductor portion and the organic insulating film. Moreover, the manufacturing method of the anisotropically-conductive member which concerns on this embodiment may be equipped with the process for removing the copper particle adhering on an organic insulating film after a filling process. Examples of the process for removing the copper particles include mechanical removal, cleaning with a solvent, etching, and the like.

<Semiconductor device>
The semiconductor device according to the present embodiment includes the anisotropic conductive member according to the present embodiment and a semiconductor chip disposed on at least one surface of the anisotropic conductive member. The semiconductor chip may be singular or plural. The plurality of semiconductor chips may be of the same type or different types. FIG. 5 is a cross-sectional view illustrating an example of a semiconductor device. FIG. 6 is a cross-sectional view illustrating another example of a semiconductor device.

  The semiconductor device according to the present embodiment includes an anisotropic conductive member according to the present embodiment, a semiconductor chip disposed on one surface of the anisotropic conductive member, and a semiconductor chip or substrate disposed on the other surface of the anisotropic conductive member. And may be provided. In the semiconductor device according to the present embodiment, semiconductor chips may be mounted on both surfaces of the anisotropic conductive member.

  A semiconductor device (semiconductor package) 20 shown in FIG. 5 includes an anisotropic conductive member 10, a semiconductor chip 22 disposed on one surface of the anisotropic conductive member 10, and a semiconductor disposed on the other surface of the anisotropic conductive member 10. Chip 24. The connection part 22 a of the semiconductor chip 22 is electrically connected to the connection part 24 a of the semiconductor chip 24 through the conductor part 14 of the anisotropic conductive member 10.

  The semiconductor device according to the present embodiment may include an anisotropic conductive member according to the present embodiment and a plurality of semiconductor chips disposed on one surface of the anisotropic conductive member. A plurality of semiconductor chips and the anisotropic conductive member can be connected via a rewiring layer. The semiconductor device according to the present embodiment includes an anisotropic conductive member according to the present embodiment, a rewiring layer disposed on one surface of the anisotropic conductive member, a plurality of semiconductor chips disposed on the rewiring layer, It may be a mode provided with.

  A semiconductor device (semiconductor package with a wiring layer) 30 shown in FIG. 6 is disposed on the anisotropic conductive member 10, a rewiring layer 32 disposed on one surface of the anisotropic conductive member 10, and the rewiring layer 32. Semiconductor chips 34 and 36. The connection part 34 a of the semiconductor chip 34 is electrically connected to the connection part 36 a of the semiconductor chip 36 through the rewiring layer 32.

  The connecting portion of the semiconductor chip and the anisotropic conductive member can be electrically connected by thermocompression bonding. Prior to thermocompression bonding, the oxide film of the anisotropic conductive member can be removed by washing. The connection portion of the semiconductor chip is not particularly limited, but bumps formed of copper, tin, or the like can be used, and the oxide film can be removed before thermocompression bonding.

  As mentioned above, although embodiment of this indication was described, this indication is not limited to the embodiment mentioned above, and may change suitably in the range which does not deviate from the meaning.

  DESCRIPTION OF SYMBOLS 10 ... Anisotropic conductive member, 12 ... Organic insulating film, 14 ... Conductor part, 16 ... Base material, 18 ... Through-via, 20, 30 ... Semiconductor device, 22, 24, 34, 36 ... Semiconductor chip, 22a, 24a, 34a, 36a ... connection part, 32 ... rewiring layer.

Claims (7)

An organic insulating film, and a conductor portion penetrating the organic insulating film in the thickness direction,
An anisotropic conductive member in which the conductor portion contains particles containing copper.   The anisotropic conductive member according to claim 1, wherein the organic insulating film has a thickness of 1 to 20 μm.   The anisotropic conductive member according to claim 1 or 2, wherein an average particle diameter of the particles is 0.02 to 3 µm.   The anisotropic conductive member as described in any one of Claims 1-3 in which the said organic insulating film contains the hardened | cured material of a photosensitive insulating film. An anisotropic conductive member according to any one of claims 1 to 4,
And a semiconductor chip disposed on at least one surface of the anisotropic conductive member. Forming a through via that penetrates the organic insulating film in the thickness direction;
And a step of disposing a particle containing copper in the through via to form a conductor portion. The organic insulating film is a photosensitive insulating film;
The method for manufacturing an anisotropic conductive member according to claim 6, wherein the through via is formed by exposing and developing the organic insulating film.

Images