JP2017167551A - 光子源 - Google Patents
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- JP2017167551A JP2017167551A JP2017091347A JP2017091347A JP2017167551A JP 2017167551 A JP2017167551 A JP 2017167551A JP 2017091347 A JP2017091347 A JP 2017091347A JP 2017091347 A JP2017091347 A JP 2017091347A JP 2017167551 A JP2017167551 A JP 2017167551A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/06—Polarisation multiplex systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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Abstract
【解決手段】光子が少なくとも2つの量子準位間の遷移に起因して量子構造から放出されることができるように、1以上の量子準位を規定可能な量子構造を具備する光子源であって、少なくとも2つの量子準位間のエネルギー間隔である遷移エネルギーを変えるように構成された制御信号と、量子構造を照射するように構成されたレーザー入力ビームとを有し、制御信号は、遷移エネルギーをレーザー入力ビームと共鳴するようにし、遷移エネルギーをレーザー入力ビームと共鳴しないようにするように構成され、これにより、遷移エネルギーが、遷移から2つの光子を出力する時間未満の時間の間、レーザー入力ビームのエネルギーで共鳴する。
【選択図】図2
Description
光子が少なくとも2つの量子準位間の遷移に起因して量子構造から放出されるように、1以上の量子準位を規定可能な量子構造を与えることと、
レーザー入力ビームで量子構造を照射することと、
制御信号で量子構造の遷移エネルギーを変えることとを具備し、制御信号は、遷移エネルギーをレーザー入力ビームと共鳴するようにし、遷移エネルギーをレーザー入力ビームと共鳴しないようにするように構成され、これにより、遷移エネルギーが、遷移から2つの光子を出力する時間未満の時間の間、レーザー入力ビームのエネルギーで共鳴する。
Claims (20)
- 光子が少なくとも2つの量子準位間の遷移に起因して量子構造から放出されることができるように、1以上の量子準位を規定可能な量子構造を具備する光子源であって、
前記量子構造には、前記少なくとも2つの量子準位間のエネルギー間隔である遷移エネルギーを変えるように構成された制御信号と、前記量子構造を照射するように構成されたレーザー入力ビームとが入力され、
前記制御信号は、連続的に漸増および漸減を繰り返す、時間変動する制御信号であり、
前記制御信号は、前記制御信号のある値において遷移エネルギーが前記レーザー入力ビームのエネルギーと共鳴するように構成され、これにより、前記制御信号が前記ある値になるごとに前記量子構造から単一光子が放出される光子源。 - 前記制御信号は、前記制御信号の極値が遷移エネルギーを前記レーザー入力ビームのエネルギーと共鳴させるように構成されている請求項1に記載の光子源。
- 前記量子構造から放出された光子を収集するための収集光学系をさらに具備し、光子源は、前記レーザー入力ビームが前記収集光学系に入るのを防止するように構成されている請求項1に記載の光子源。
- 光子源は、前記レーザー入力ビームを偏光し、偏光された前記レーザー入力ビームが前記収集光学系に入るのを遮断するように構成された偏光素子を有する請求項3に記載の光子源。
- 前記量子構造は、デバイス内に設けられ、
光子源は、前記レーザー入力ビームが前記デバイスの第1の表面を介して前記デバイスに入り、前記光子が前記第1の表面に平行でない第2の表面を介して放出されるように構成されている請求項1に記載の光子源。 - 前記量子構造は、デバイス内に設けられ、前記レーザー入力ビームは、前記光子が放出されるのと同じ表面を通って前記デバイスに入る請求項1に記載の光子源。
- 前記遷移は、縮退した固有状態を有し、前記レーザー入力ビームは、複数の固有状態を励起させるように構成されている請求項1に記載の光子源。
- 前記レーザー入力ビームの線幅は、前記遷移の線幅未満であり、前記レーザー入力ビームの源は、CWレーザーである請求項1に記載の光子源。
- 前記量子構造は、量子ドットを有する請求項1に記載の光子源。
- 前記量子構造は、デバイス内に設けられ、前記デバイスは、p−i−nダイオードを有する請求項9に記載の光子源。
- 前記量子ドットは、光学キャビティ中に位置されている請求項10に記載の光子源。
- 前記制御信号は、電気制御信号であり、量子閉じ込めシュタルク効果によって前記遷移を制御するように構成されている請求項1に記載の光子源。
- 複数の量子構造と、各量子構造に適用される制御信号とを具備し、これにより、各量子構造で前記遷移が前記レーザー入力ビームと共鳴するようにされることができ、前記レーザー入力ビームが各量子構造に供給される請求項1に記載の光子源。
- 各量子構造は、個々のデバイスに設けられる請求項13に記載の光子源。
- 前記複数の量子構造は、前記レーザー入力ビームに対して並列に配置されている請求項13に記載の光子源。
- 量子論理素子に同一の光子を出力するように構成されている請求項13に記載の光子源。
- 前記量子構造は、固体状態デバイスにおいて光学活性な欠陥中心を有する請求項1に記載の光子源。
- 前記レーザー入力ビーム及び前記制御信号は、前記レーザー入力ビームのエネルギーが、遷移を励起する確率を最大にするために設定された時間の間、前記遷移と縮退するように構成されている請求項1に記載の光子源。
- 前記制御信号は、レーザー入力ビームの線幅と遷移の線幅との合計の半分よりも大きなエネルギーだけ前記遷移をシフトさせるように構成されている請求項1に記載の光子源。
- 前記レーザー入力ビームの強度は、光子が前記遷移からコヒーレントに散乱されることを確実にするために十分に低い請求項1に記載の光子源。
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GB1408674.8A GB2526140B (en) | 2014-05-15 | 2014-05-15 | Photon Source comprising a Control Signal and a Quantum Structure |
GB1408674.8 | 2014-05-15 |
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JP6419889B2 JP6419889B2 (ja) | 2018-11-07 |
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WO2023119933A1 (ja) * | 2021-12-24 | 2023-06-29 | 浜松ホトニクス株式会社 | 光子数識別システム、光子数識別方法および光子数識別処理プログラム |
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US10637583B2 (en) | 2015-07-10 | 2020-04-28 | Omnisent, LLC | Systems and methods for modeling quantum entanglement and performing quantum communication |
CN109416479B (zh) * | 2016-06-27 | 2020-09-11 | 华为技术有限公司 | 移相器、量子逻辑门装置、光量子计算装置和移相的方法 |
US10586908B2 (en) * | 2018-07-17 | 2020-03-10 | Lawrence Livermore National Security, Llc | Quantum coherent devices with reduced energy dissipation |
WO2020167289A1 (en) * | 2019-02-11 | 2020-08-20 | Omnisent, LLC | Systems and methods for modeling quantum entanglement and performing quantum communication |
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- 2014-05-15 GB GB1408674.8A patent/GB2526140B/en active Active
- 2014-08-26 US US14/468,469 patent/US10630051B2/en active Active
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JP2011209725A (ja) * | 2010-03-30 | 2011-10-20 | Toshiba Corp | 量子ビットを制御する量子ロジックコンポーネント及び方法 |
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