JP2017157808A - Semiconductor processing sheet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor processing sheet excellent in light transparency, in which blocking is difficult to occur.SOLUTION: In a semiconductor processing sheet 1 comprising at least a base material 10 having a first surface 101 and a second surface 102, a semiconductor sticking layer 80 having a first surface 801 and a second surface 802, and a peeling film 30 having a first surface 301 and a second surface 302, arithmetic average roughness Ra in the first surface 101 is 0.01-0.8 μm, the peeling film 30 includes a remover layer, respectively, on the first surface 301 side and the second surface 302 side. The second surface 802 of the semiconductor sticking layer 80, and the first surface 301 of the peeling film 30 are stuck and after preserved at 40°C for three days, the peeling force β on the interface of the second surface 802 of the semiconductor sticking layer 80, and the first surface 301 of the peeling film 30 is 10-1000 mN/50 mm.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor processing sheet.

  When a semiconductor chip is manufactured from a semiconductor wafer, a semiconductor processing sheet such as a dicing sheet or a back grind sheet is generally used. In recent years, such a semiconductor processing sheet is required to have transparency to light having a desired wavelength (hereinafter sometimes referred to as “light transmittance”).

  For example, in recent years, the use of silicon wafers and glass wafers that are thinner than conventional ones has increased. When these wafers are diced using a blade, chip defects such as chipping and chip cracks are likely to occur. Therefore, when these wafers are used, after the dicing is completed, the shape of the chip is inspected from the surface in contact with the semiconductor processing sheet on the chip through the semiconductor processing sheet with the chip attached to the semiconductor processing sheet. Things have been done. In order to perform this inspection satisfactorily, the semiconductor processing sheet needs to transmit light for inspection.

  Also, when thin wafers are singulated, there is concern about chipping if full cutting is performed with a blade. For this reason, the tip dicing method is used in which the wafer is half-cut first and then back grinding is used, or laser light is used. In some cases, a stealth dicing method is used in which a modified layer is provided inside a wafer and then backside grinding is performed to separate chips.

  In stealth dicing, if a modified layer is formed inside a wafer by irradiation with laser light and then affixed to a semiconductor processing sheet, there is a risk that the wafer will be damaged by the pressure of the application. In order to avoid this risk, a modified layer is formed by attaching a wafer to a semiconductor processing sheet in advance and then irradiating the wafer with laser light through the semiconductor processing sheet. In this case, in order to irradiate the laser beam satisfactorily, the semiconductor processing sheet needs to transmit the laser beam.

  Further, when a chip is mounted by flip chip, the product surface or lot number is usually laser-printed on the back surface of the chip. In order to perform such laser printing, there is provided a step of transporting the wafer whose back surface grinding has been completed to a laser printing apparatus. Thin wafers used in recent years have a high risk of wafer cracking during transport. In order to avoid this risk, it has been devised that a thinned wafer is transported while being stuck to a semiconductor processing sheet and printed by irradiating a laser beam through the semiconductor processing sheet. In order to perform this laser printing satisfactorily, the semiconductor processing sheet needs to transmit laser light.

  Also, when a protective film is provided on the back surface of the chip, laser printing may be performed on the protective film. In this case, printing is performed by irradiating the protective film forming layer of the semiconductor processing sheet including the protective film forming layer with laser light through the base material or the adhesive layer of the semiconductor processing sheet. Also in this case, in order to perform laser printing satisfactorily, it is necessary for the base material and the adhesive layer of the semiconductor processing sheet to transmit laser light.

  A semiconductor processing sheet generally includes a base material and an adhesive layer laminated on one surface of the base material. Furthermore, a release film may be provided on the pressure-sensitive adhesive layer for the purpose of protecting the pressure-sensitive adhesive layer until the semiconductor processing sheet is used. For example, Patent Documents 1 and 2 describe a semiconductor processing sheet in which a base material, an adhesive layer, and a release film are laminated in this order. In general, other layers such as an adhesive layer and a protective film forming layer may be provided between the pressure-sensitive adhesive layer and the release film, depending on the use of the semiconductor processing sheet.

Actual Kaihei 8-1220 ACT 2-146144

  The light transmittance with respect to the light which has a desired wavelength in the sheet | seat for semiconductor processing can be achieved by raising the light transmittance of a base material or an adhesive layer, respectively. For example, it can be achieved by increasing the smoothness of the surface of the semiconductor processing sheet on the substrate side, that is, the surface of the substrate opposite to the pressure-sensitive adhesive layer.

  However, if the smoothness of the surface of the semiconductor processing sheet on the substrate side is increased in order to obtain a semiconductor processing sheet having high light transmittance, blocking is likely to occur. That is, when a long semiconductor processing sheet is wound up in a roll shape, the semiconductor processing sheets are easily adhered to each other. When such adhesion occurs, it becomes difficult to feed out the semiconductor processing sheet from the roll, or peeling occurs at an unintended interface (for example, an interface between the pressure-sensitive adhesive layer and the release film). Further, in the semiconductor processing sheet in which the base material and the pressure-sensitive adhesive layer are pre-cut according to the shape of the wafer, when such blocking occurs, the base material and the pressure-sensitive adhesive are removed from the release film when the semiconductor processing sheet is unwound from the roll. There arises a problem that the laminate with the layer peels off or the base material side of the peeled laminate sticks to the back surface of the release film.

  Here, in Patent Documents 1 and 2, it is opposite to the pressure-sensitive adhesive layer in the release film for the purpose of avoiding air trapping between the semiconductor processing sheets when the semiconductor processing sheet is wound into a roll. It is disclosed to emboss the side surface.

  On the other hand, the semiconductor processing sheet disclosed in Patent Document 1 or 2 does not have a high smoothness on the surface of the base material, and the inspection and laser through the semiconductor processing sheet as described above. Cannot be used for dicing, stealth dicing, laser printing, etc.

  This invention is made | formed in view of the above actual conditions, and it aims at providing the sheet | seat for semiconductor processing which is excellent in light transmittance, and is hard to produce blocking.

  In order to achieve the above object, first, the present invention provides a substrate having a first surface and a second surface located on the opposite side of the first surface, and a second surface of the substrate. And a semiconductor adhesive layer having a first surface on a side proximal to the substrate and a second surface distal to the substrate, and a second in the semiconductor adhesive layer A semiconductor processing sheet comprising at least a release film laminated on a surface side, having a first surface on a side proximal to the semiconductor adhesive layer, and having a second surface on a side distal to the semiconductor adhesive layer And the arithmetic mean roughness Ra in the 1st surface of the said base material is 0.01-0.8 micrometer, The said peeling film is each in the 1st surface side and the 2nd surface side. A release agent layer is provided, and the second surface of the semiconductor adhesive layer and the first surface of the release film are attached to each other at 40 ° C. for 3 days. A semiconductor processing sheet having a peeling force β at the interface between the second surface of the semiconductor adhesive layer and the first surface of the release film of 10 to 1000 mN / 50 mm after being piped. Provided (Invention 1)

  According to the said invention (invention 1), the smoothness in the surface at the side of a base material becomes favorable because arithmetic mean roughness Ra in the 1st surface of a base material is 0.01-0.8 micrometer. The substrate has a high light transmittance for light of a desired wavelength. Furthermore, when the release film is provided with a release agent layer on the second surface side, it is avoided that the semiconductor processing sheets are strongly adhered to each other when wound up in a roll shape, and has excellent blocking resistance. Sex is demonstrated. Accordingly, the feeding can be performed satisfactorily and peeling at an unintended interface does not occur at the time of feeding. Moreover, since peeling force (beta) is 10-1000 mN / 50mm, when using the sheet | seat for semiconductor processing, the laminated body containing a base material and a semiconductor sticking layer can be peeled from a peeling film with moderate peeling force. .

  In the said invention (invention 1), after laminating | stacking the 1st surface of the said base material and the 2nd surface of the said peeling film, and storing at 40 degreeC for 3 days, the said 1st surface of the said base material and the said When the peel force at the interface with the second surface of the release film is α, the ratio of the peel force α to the peel force β (α / β) is 0 or more and less than 1.0. Is preferred (Invention 2).

  In the above inventions (Inventions 1 and 2), the semiconductor adhesive layer may be an adhesive layer (Invention 3).

  In the above inventions (Inventions 1 and 2), the semiconductor adhesive layer may be an adhesive layer (Invention 4).

  In the said invention (invention 1 and 2), the said semiconductor sticking layer may be a protective film formation layer (invention 5).

  In the said invention (invention 1 and 2), the said semiconductor sticking layer may be comprised from the adhesive layer and the adhesive bond layer located between the said adhesive layer and the said peeling film (invention 6).

  In the said invention (invention 1 and 2), the said semiconductor sticking layer may be comprised from the adhesive layer and the protective film formation layer located between the said adhesive layer and the said peeling film (invention 7).

  In the said invention (invention 1-7), the said sheet | seat for semiconductor processing is a lamination | stacking containing the said base material and the said semiconductor sticking layer which have a shape different from the said peeling film in planar view on the said long peeling film. The body may be laminated (Invention 8).

  2ndly, this invention is laminated | stacked on the 2nd surface side in the said base material which has the 1st surface and the 2nd surface located on the opposite side to the said 1st surface, The said base material A semiconductor adhesive layer having a first surface proximal to the substrate and having a second surface distal to the substrate, and is laminated on the second surface side of the semiconductor adhesive layer, the semiconductor A jig adhesive layer having a first surface on the side proximal to the adhesive layer and having a second surface on the side distal to the semiconductor adhesive layer, and at least a first adhesive layer in the jig adhesive layer; A release film having a first surface on the side proximal to the jig adhesive layer and a second surface distal to the jig adhesive layer. The arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm, and the release film is A release agent layer is provided on each of the first surface side and the second surface side, and the second surface of the pressure-sensitive adhesive layer for jig and the first surface of the release film are pasted at 40 ° C. The peeling force β at the interface between the second surface of the jig pressure-sensitive adhesive layer and the first surface of the release film after storage for 3 days is 10 to 1000 mN / 50 mm. A semiconductor processing sheet is provided (Invention 9).

  ADVANTAGE OF THE INVENTION According to this invention, while being excellent in light transmittance, the sheet | seat for semiconductor processing which cannot produce blocking easily can be provided.

It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the state with which the sheet | seat for semiconductor processing which concerns on the 1st Embodiment of this invention overlapped. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 1st aspect of the 1st Embodiment of this invention. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 2nd aspect of the 1st Embodiment of this invention. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 3rd aspect of the 1st Embodiment of this invention. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 4th aspect of the 1st Embodiment of this invention. It is a top view of the sheet | seat for semiconductor processing which concerns on the 5th aspect of the 1st Embodiment of this invention. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the sheet | seat for semiconductor processing which concerns on the 3rd Embodiment of this invention. It is sectional drawing along the AA line of FIG.

Hereinafter, embodiments of the present invention will be described.
FIG. 1 shows a semiconductor processing sheet 1 according to the first embodiment. The semiconductor processing sheet 1 is configured by laminating a base material 10, a semiconductor adhesive layer 80, and a release film 30 in this order. The base material 10 has a first surface 101 on a side distal to the semiconductor adhesive layer 80 and a second surface 102 on a side proximal to the semiconductor adhesive layer 80. The semiconductor adhesive layer 80 has a first surface 801 on the side proximal to the substrate 10 and a second surface 802 on the side proximal to the release film 30. The release film 30 has a first surface 301 on a side proximal to the semiconductor adhesive layer 80 and a second surface 302 on a side distal to the semiconductor adhesive layer 80.

  In the semiconductor processing sheet 1 according to the present embodiment, the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 μm. Since the first surface 101 of the substrate 10 is smooth as described above, the light irradiated to the first surface 101 is reduced from being scattered on the surface, and the substrate 10 exhibits high light transmittance. Is done.

  In the semiconductor processing sheet 1 according to the present embodiment, the release film 30 includes a release agent layer on the first surface 301 side and the second surface 302 side. By providing the release film 30 with the release agent layer on the first surface 301 side, the release film 30 can be released from the semiconductor processing sheet 1 with an appropriate release force. In addition, since the release film 30 includes the release agent layer on the second surface 302 side, the second surface 302 of the release film 30 can be applied to the first surface 101 of the smooth substrate 10 as described above. It becomes difficult to adhere. As a result, when the semiconductor processing sheet 1 is wound up in a roll shape, the semiconductor processing sheets 1 are hardly adhered to each other. Accordingly, the feeding can be performed satisfactorily and peeling at an unintended interface does not occur at the time of feeding. That is, excellent blocking resistance is exhibited.

  Furthermore, in the semiconductor processing sheet 1 according to the present embodiment, the peeling force β is 10 to 1000 mN / 50 mm. Here, the peel force β is a peel force at the interface between the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30 as described later. Thereby, when using the sheet | seat 1 for semiconductor processing, the laminated body containing a base material and a semiconductor sticking layer can be peeled from a peeling film with moderate peeling force.

1. Physical Properties of Semiconductor Processing Sheet In the semiconductor processing sheet 1 according to the present embodiment, the peeling force at the interface between the second surface 202 of the pressure-sensitive adhesive layer 20 and the first surface 301 of the release film 30 is β. In this case, the peeling force β is 10 to 1000 mN / 50 mm, preferably 10 to 500 mN / 50 mm, and particularly preferably 30 to 200 mN / 50 mm. Here, the peel force β is a state where the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30 are adhered, and after being stored at 40 ° C. for 3 days in a dry state. It is the peeling force of the peeling film 30 with respect to the adhesive layer 20. When the peeling force β is less than 10 mN / 50 mm, the laminate of the substrate 10 and the semiconductor adhesive layer 80 is peeled from the peeling film 30 when the semiconductor processing sheet 1 is unwound from the roll or at any other unintended stage. It becomes easy to do. Moreover, when peeling force (beta) exceeds 1000 mN / 50mm, when using the sheet | seat 1 for semiconductor processing, it will become difficult to peel the laminated body of the base material 10 and the semiconductor sticking layer 80 from the peeling film 30, and workability | operativity. Will get worse. In particular, when a wafer mounter is used to sequentially mount the laminate on a semiconductor wafer, the laminate does not peel well from the release film 30 and cannot be mounted.

  In the present specification, the peeling force β is defined as the peeling force at the interface between the peeling film 30 and the main layer in contact therewith. For example, in the semiconductor processing sheet 1, since the release film 30 and the semiconductor adhesive layer 80 are in contact with each other, the release force β at the interface between the semiconductor adhesive layer 80 and the release film 30 is defined. On the other hand, in the semiconductor processing sheet 2 (see FIG. 8) according to the second embodiment including the jig adhesive layer 60 described later, the jig adhesive layer together with the semiconductor adhesive layer 80 with respect to the release film 30. 60 contacts. Here, the contact between the release film 30 and the pressure-sensitive adhesive layer 60 for jigs is more when the release film 30 is peeled from the semiconductor processing sheet 2 than the contact between the release film 30 and the semiconductor adhesive layer 80. The effect on peeling force is large. Therefore, in the semiconductor processing sheet 2 including the jig pressure-sensitive adhesive layer 60, as described later, the surface of the jig pressure-sensitive adhesive layer 60 on the side of the release film 30 (second surface 602) and the release film 30 are cured. The peeling force β at the interface with the surface (first surface 301) on the side of the adhesive layer 60 for tool is defined.

  In the semiconductor processing sheet 1 according to the present embodiment, when the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the peeling film 30 is α, the above-described peeling force β The value (α / β) of the peel force α is preferably 0 or more, particularly preferably 0.05 or more, and further preferably 0.1 or more. The ratio value (α / β) is preferably less than 1.0, particularly preferably 0.5 or less, and more preferably 0.2 or less. Here, the peeling force α is a value obtained by laminating the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 and storing them in a dry state at 40 ° C. for 3 days. It is the peeling force of the peeling film 30 with respect to. In addition, the case where the value of the ratio (α / β) is 0 is a case where the value of the peeling force α is 0, which is so small that the peeling force α cannot be measured, or from the base material 10 before the measurement. This means that the release film 30 has already been peeled off. When the ratio (α / β) of the peeling force α to the peeling force β is 0 or more and less than 1.0, the semiconductor processing sheets 1 overlap each other as shown in FIG. The adhesiveness between the sheets 1 for manufacturing does not become higher than the adhesiveness between the layers constituting the semiconductor processing sheet. Specifically, the adhesion between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 facing the first surface 101 is the adhesion between the substrate 10 and the semiconductor adhesive layer 80. In addition, the adhesion between the semiconductor adhesive layer 80 and the release film 30 does not become higher. Thereby, the blocking resistance mentioned above becomes more excellent. That is, when the semiconductor processing sheet 1 wound in a roll shape is fed out, the first surface 101 of the substrate 10 in the semiconductor processing sheet 1 and the second of the release film 30 in the semiconductor processing sheet 1 overlapped therewith. The adhesion with the surface 302 can be effectively suppressed. Furthermore, the occurrence of delamination at an unintended interface of the semiconductor processing sheet 1 during feeding is suppressed. Thus, the semiconductor processing sheet 1 can be fed out satisfactorily.

  The thickness of the semiconductor processing sheet 1 according to the present embodiment is not limited as long as it can function properly in the process in which the semiconductor processing sheet 1 is used. In general, the thickness is preferably 50 to 300 μm, particularly preferably 50 to 250 μm, and further preferably 50 to 230 μm. In addition, the thickness of the sheet | seat 1 for semiconductor processing in this specification means the thickness except the peeling film 30 peeled before using the sheet | seat 1 for semiconductor processing.

2. Base Material In the semiconductor processing sheet 1 according to the present embodiment, the arithmetic average roughness Ra on the first surface 101 of the base material 10 is 0.01 to 0.8 μm, particularly 0.02 to 0.5 μm. It is preferable that the thickness is 0.03 to 0.3 μm. When the arithmetic average roughness Ra is less than 0.01 μm, the first surface 101 becomes excessively smooth, the value of the peeling force α becomes too large, and the semiconductor processing sheet 1 is rolled up. Blocking is likely to occur. On the other hand, when the arithmetic average roughness Ra exceeds 0.8 μm, the light irradiated on the first surface 101 is likely to be scattered on the surface, and the light transmittance is impaired. In addition, arithmetic mean roughness Ra in this specification is measured based on JISB0601: 2013, and the detail of the measuring method is as showing in the Example mentioned later.

  In order to achieve the arithmetic average roughness Ra, it is preferable to manufacture the base 10 so as to have the arithmetic average roughness Ra. For example, it is preferable to manufacture the base material 10 having the arithmetic average roughness Ra by adjusting the surface roughness of a roll used for extrusion molding of the base material 10. Or when manufacturing the base material 10 by an inflation method, it is preferable to adjust so that the roughness of the surface used as the 1st surface 101 may become the said arithmetic mean roughness Ra.

  The arithmetic average roughness Ra on the second surface 102 of the substrate 10 can be appropriately set as long as the light transmittance of the substrate 10 can be secured, and is preferably 0.01 to 2.0 μm, for example. In particular, the thickness is preferably 0.03 to 1.5 μm, and more preferably 0.05 to 1.0 μm.

  In the semiconductor processing sheet 1 according to the present embodiment, the constituent material of the base material 10 exhibits excellent light transmittance with respect to light of a desired wavelength, and further exhibits a desired function in the use process of the semiconductor processing sheet 1. As long as it does, it is not specifically limited. The base material 10 may include a film (resin film) whose main material is a resin-based material. Preferably, the base material 10 consists only of a resin film. Specific examples of the resin film include ethylene-vinyl acetate copolymer film; ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid methyl copolymer film, and other ethylene- (meth) acrylic. Ethylene copolymer films such as acid ester copolymer films; Polyolefin films such as polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-norbornene copolymer films, norbornene resin films; Polyvinyl chloride film such as vinyl film and vinyl chloride copolymer film; Polyester film such as polyethylene terephthalate film, polybutylene terephthalate film and polyethylene naphthalate Beam; and the like fluororesin film; (meth) acrylic acid ester copolymer film; polyurethane film; polyimide film; polystyrene films; polycarbonate films. Examples of the polyethylene film include a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, and a high density polyethylene (HDPE) film. In addition, modified films such as these crosslinked films and ionomer films are also used. The substrate 10 may be a film made of one of these, or may be a film made of a material in which two or more of these are combined. Moreover, the laminated film of the multilayer structure in which the layer which consists of 1 or more types of materials mentioned above was laminated | stacked may be sufficient. In this laminated film, the material constituting each layer may be the same or different. Among the above films, the substrate 10 is preferably an ethylene-vinyl acetate copolymer film, an ethylene-methyl methacrylate copolymer film, a polyvinyl chloride film, or a polypropylene film. In addition, “(meth) acrylic acid” in the present specification means both acrylic acid and methacrylic acid. The same applies to other similar terms.

  In the base material 10, a flame retardant, a plasticizer, an antistatic agent, a lubricant, an antioxidant, a colorant, and an infrared absorber are included in the above film as long as the excellent light transmittance for light of a desired wavelength is not impaired. In addition, various additives such as an ultraviolet absorber and an ion scavenger may be contained. The content of these additives is not particularly limited, but it is preferable that the base material 10 has an excellent light transmittance and a desired function.

  As will be described later, the pressure-sensitive adhesive layer 20 may be used as the semiconductor adhesive layer 80, and when energy rays are used to cure the pressure-sensitive adhesive layer 20, the base material 10 is light transmissive to the energy rays. It is preferable to have. For example, examples of the energy beam include ultraviolet rays and electron beams.

  As long as the second surface 102 of the base material 10 does not impair the light transmittance in the semiconductor processing sheet 1, surface treatment such as primer treatment, corona treatment, plasma treatment or the like is performed in order to improve adhesion to the semiconductor adhesive layer 80. May be applied.

  The thickness of the base material 10 is not limited as long as it can function appropriately in the process in which the semiconductor processing sheet 1 is used. In general, the thickness is preferably 20 to 450 μm, particularly preferably 25 to 300 μm, and more preferably 50 to 200 μm.

3. Release Film In the release film 30 of the semiconductor processing sheet 1 according to this embodiment, a release agent layer is provided on each of the first surface 301 side and the second surface 302 side. By providing the release agent layer on the second surface 302 side, when the semiconductor processing sheet 1 is wound up in a roll shape, the first surface 101 of the smooth substrate 10 is also provided with the first of the release film 30. 2 surface 302 becomes difficult to adhere. As a result, it becomes difficult for the semiconductor processing sheets 1 to be in close contact with each other, and blocking can be suppressed. Further, by providing the release agent layer on the first surface 301 side, the above-described value of the peeling force β can be achieved.

  The release agent layer on the first surface 301 side and the release agent layer on the second surface 302 side may have the same level of release force. Alternatively, one of the release agent layer on the first surface 301 side and the release agent layer on the second surface 302 side may be a heavy release type having a high release force and the other may be a light release type having a low release force. In the latter case, the release agent layer on the first surface 301 side is overlapped from the viewpoint of preventing unintentional peeling at the interface between the semiconductor adhesive layer 80 and the release film 30 when the semiconductor processing sheet 1 is unwound from the roll. It is preferable to use a release type and to make the release agent layer on the second surface 302 side a light release type.

  For example, the release film 30 has a configuration in which a release agent layer is provided on both surfaces of a substrate such as a resin film. Specific examples of the resin film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene. As the release agent, silicone release agents, alkyd release agents, fluorine release agents, long chain alkyl release agents, rubber release agents, and the like can be used. Among these, it is preferable to use a silicone-based release agent on the first surface 301 side from the viewpoint that it is easy to achieve both the blocking resistance and the achievement of the above-described value of the peeling force β. From the viewpoint of easily adjusting the ratio (α / β) of the peeling force α to the above value, it is preferable to use a silicone-based release agent or an alkyd-type release agent on the second surface 302 side.

  The arithmetic average roughness Ra of the second surface 302 of the release film 30 is preferably 0.02 to 0.8 μm, particularly preferably 0.03 to 0.5 μm, and more preferably 0.03 to 0.03. It is preferable that it is 0.04 micrometer. When the arithmetic average roughness Ra of the second surface 302 is 0.02 to 0.8 μm, the second surface 302 has an appropriate roughness, and the value of the peeling force α does not become excessively large. Thereby, it becomes easy to satisfy | fill the above-mentioned relationship between peeling force (alpha) and peeling force (beta). In addition, when the arithmetic average roughness Ra of the second surface 302 is 0.02 μm or more, the first surface 101 of the smooth substrate 10 is formed when the semiconductor processing sheet 1 is rolled up. In contrast, it is difficult for the second surface 302 of the release film 30 to adhere, and as a result, the occurrence of blocking can be effectively prevented. Furthermore, when the arithmetic average roughness Ra of the second surface 302 is 0.8 μm or less, the surface shape of the second surface 302 of the release film 30 when the semiconductor processing sheet 1 is wound into a roll shape. Even if the transfer to the first surface 101 of the substrate 10 occurs, the smoothness of the first surface 101 is prevented from being lowered.

  In order to achieve the arithmetic average roughness Ra, the release film 30 may be manufactured so as to have the arithmetic average roughness Ra when the release film 30 is manufactured. Or after manufacturing the constituent material of the peeling film 30 in a sheet form, you may surface-treat the said sheet so that it may have the said arithmetic mean roughness Ra. In the former case, for example, the release film 30 having the arithmetic average roughness Ra can be produced by adjusting the surface roughness of a roll used for extrusion molding of the release film 30. In the latter case, for example, the release film 30 having the arithmetic average roughness Ra can be obtained by subjecting the sheet to sandblasting or embossing.

  The arithmetic average roughness Ra on the first surface 301 of the release film 30 can be appropriately set as long as the above-described value of the release force β can be achieved, and is preferably 0.02 to 0.10 μm, for example. In particular, the thickness is preferably 0.02 to 0.07 μm, and more preferably 0.03 to 0.05 μm.

  The thickness of the release agent layer provided on the first surface 301 side of the release film 30 is preferably 0.04 to 3.0 μm from the viewpoint of easily adjusting the value of the release force β to the above range. In particular, 0.06 to 2.0 μm is preferable. The thickness of the release agent layer provided on the second surface 302 side of the release film 30 is 0 from the viewpoint that the ratio of the release force α to the release force β (α / β) can be easily adjusted to the above-described value. 0.04 to 3.0 μm is preferable, and 0.06 to 2.0 μm is particularly preferable.

  Although there is no restriction | limiting in particular in the thickness of the peeling film 30, Usually, it is about 12-250 micrometers.

4). Semiconductor Affixing Layer The semiconductor affixing layer 80 refers to a layer to which a semiconductor wafer or the like is affixed or a layer to be affixed to a semiconductor wafer or the like when the semiconductor processing sheet 1 according to this embodiment is used. The sticking at this time may be sticking temporarily performed when the semiconductor processing sheet 1 is used, or may be sticking continued even after the semiconductor processing sheet 1 is used. Preferred examples of the semiconductor adhesive layer 80 include a pressure-sensitive adhesive layer 20, an adhesive layer 40, a protective film forming layer 50, a laminate composed of the pressure-sensitive adhesive layer 20 and the adhesive layer 40, and a pressure-sensitive adhesive layer 20 and a protective film forming layer. 50 and the like.

  FIG. 3 shows a first mode of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1 a according to this aspect, the semiconductor adhesive layer 80 is the pressure-sensitive adhesive layer 20. In the semiconductor processing sheet 1 a, the pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30. The semiconductor processing sheet 1a can be used as a dicing sheet, for example.

  FIG. 4 shows a second mode of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1 b according to this aspect, the semiconductor adhesive layer 80 is the adhesive layer 40. In the semiconductor processing sheet 1 b, the adhesive layer 40 has a first surface 401 on the side proximal to the substrate 10 and a second surface 402 on the side proximal to the release film 30. The semiconductor processing sheet 1b can be used as a die bonding sheet, for example.

  FIG. 5 shows a third mode of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1 c according to this aspect, the semiconductor adhesive layer 80 is the protective film forming layer 50. In the semiconductor processing sheet 1 c, the protective film forming layer 50 has a first surface 501 on the side proximal to the substrate 10 and a second surface 502 on the side proximal to the release film 30. The semiconductor processing sheet 1c can be used as a protective film forming sheet, for example.

  FIG. 6 shows a fourth aspect of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1d according to this aspect, the semiconductor adhesive layer 80 is a laminate including the adhesive layer 20 and the adhesive layer 40. In the semiconductor processing sheet 1 d, the pressure-sensitive adhesive layer 20 is located on the side proximal to the substrate 10, and the adhesive layer 40 is located on the side proximal to the release film 30. The pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30. Further, the adhesive layer 40 has a first surface 401 on the side proximal to the substrate 10 and a second surface 402 on the side proximal to the release film 30. The semiconductor processing sheet 1d can be used as, for example, a dicing die bonding sheet.

  FIG. 7 shows a fifth aspect of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1e according to this aspect, the semiconductor adhesive layer 80 is a laminate including the adhesive layer 20 and the protective film forming layer 50. In the semiconductor processing sheet 1 e, the pressure-sensitive adhesive layer 20 is located on the side proximal to the substrate 10, and the protective film forming layer 50 is located on the side proximal to the release film 30. The pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30. Furthermore, the protective film forming layer 50 has a first surface 501 on the side proximal to the substrate 10 and a second surface 502 on the side proximal to the release film 30. The semiconductor processing sheet 1e can be used for dicing a semiconductor wafer. Further, after the dicing, the protective film forming layer 50 can be heated to form a protective film on the semiconductor chip. The semiconductor processing sheet 1e can also be used as a protective film forming sheet.

(1) Pressure-sensitive adhesive layer In the semiconductor processing sheet 1 according to the present embodiment, the pressure-sensitive adhesive layer 20 may be composed of a non-energy ray-curable pressure-sensitive adhesive (a polymer that does not have energy ray-curable properties), or energy. You may be comprised from a line-curable adhesive. As the non-energy ray-curable pressure-sensitive adhesive, those having desired adhesive strength and removability are preferable. Polyvinyl ether-based pressure-sensitive adhesives can be used. Among these, an acrylic pressure-sensitive adhesive that can effectively suppress dropping of a semiconductor wafer, a semiconductor chip, or the like in a dicing process or the like is preferable.

  On the other hand, since the adhesive strength of the energy ray curable adhesive decreases when irradiated with energy rays, when it is desired to separate the semiconductor wafer 1 or the semiconductor processing sheet 1 from the semiconductor processing sheet 1, the energy ray curable adhesive can be easily irradiated with energy rays. Can be separated.

  The energy ray-curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 20 may be composed mainly of a polymer having energy ray-curability, or a non-energy ray-curable polymer (a polymer having no energy ray-curability). ) And a monomer and / or oligomer having at least one energy ray-curable group. Further, it may be a mixture of a polymer having energy ray curable properties and a non-energy ray curable polymer, a polymer having energy ray curable properties and a monomer having at least one energy ray curable group and / or It may be a mixture with an oligomer or a mixture of these three.

  First, the case where the energy beam curable pressure-sensitive adhesive is mainly composed of a polymer having energy beam curable properties will be described below.

  The polymer having energy ray curability is a (meth) acrylic acid ester (co) polymer (A) (hereinafter referred to as “energy ray”) in which a functional group having energy ray curability (energy ray curable group) is introduced into the side chain. It may be referred to as “curable polymer (A)”). This energy beam curable polymer (A) reacts an acrylic copolymer (a1) having a functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. It is preferable that it is obtained.

  The acrylic copolymer (a1) is composed of a structural unit derived from a functional group-containing monomer and a structural unit derived from a (meth) acrylic acid ester monomer or a derivative thereof.

  The functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) contains a polymerizable double bond and a functional group such as a hydroxy group, a carboxy group, an amino group, a substituted amino group, and an epoxy group in the molecule. It is preferable that the monomer has

  Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl ( Examples include meth) acrylate and 4-hydroxybutyl (meth) acrylate. These may be used alone or in combination of two or more.

  Examples of the carboxy group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These may be used alone or in combination of two or more.

  Examples of the amino group-containing monomer or substituted amino group-containing monomer include aminoethyl (meth) acrylate and n-butylaminoethyl (meth) acrylate. These may be used alone or in combination of two or more.

  Examples of the (meth) acrylic acid ester monomer constituting the acrylic copolymer (a1) include alkyl (meth) acrylates having 1 to 20 carbon atoms in the alkyl group, cycloalkyl (meth) acrylates, and benzyl (meth) acrylates. Is used. Among these, alkyl (meth) acrylates having 1 to 18 carbon atoms in the alkyl group are particularly preferable, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and n-butyl (meth) acrylate. 2-ethylhexyl (meth) acrylate or the like is used.

  The acrylic copolymer (a1) usually contains 3 to 100% by mass, preferably 5 to 40% by mass of a structural unit derived from the functional group-containing monomer, and is a (meth) acrylic acid ester monomer or its The structural unit derived from the derivative is usually contained in a proportion of 0 to 97% by mass, preferably 60 to 95% by mass.

  The acrylic copolymer (a1) can be obtained by copolymerizing a functional group-containing monomer as described above with a (meth) acrylic acid ester monomer or a derivative thereof in a conventional manner. Dimethylacrylamide, vinyl formate, vinyl acetate, styrene and the like may be copolymerized.

  By reacting the acrylic copolymer (a1) having the functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group, an energy beam curable polymer (A ) Is obtained.

  The functional group possessed by the unsaturated group-containing compound (a2) can be appropriately selected according to the type of functional group of the functional group-containing monomer unit possessed by the acrylic copolymer (a1). For example, when the functional group of the acrylic copolymer (a1) is a hydroxy group, an amino group or a substituted amino group, the functional group of the unsaturated group-containing compound (a2) is preferably an isocyanate group or an epoxy group. When the functional group that the system copolymer (a1) has is an epoxy group, the functional group that the unsaturated group-containing compound (a2) has is preferably an amino group, a carboxy group, or an aziridinyl group.

  The unsaturated group-containing compound (a2) contains at least one, preferably 1-6, more preferably 1-4, energy-polymerizable carbon-carbon double bonds in one molecule. ing. Specific examples of such unsaturated group-containing compound (a2) include, for example, 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α, α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- ( Bisacryloyloxymethyl) ethyl isocyanate; acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate; diisocyanate compound or polyisocyanate compound, polyol compound, and hydroxyethyl (meth) Acryloyl monoisocyanate compound obtained by reaction with acrylate; glycidyl (meth) acrylate; (meth) acrylic acid, 2- (1 -Aziridinyl) ethyl (meth) acrylate, 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline and the like.

  The unsaturated group-containing compound (a2) is usually used in a proportion of 5 to 95 mol%, preferably 10 to 95 mol%, based on the functional group-containing monomer of the acrylic copolymer (a1).

  In the reaction between the acrylic copolymer (a1) and the unsaturated group-containing compound (a2), the functional group of the acrylic copolymer (a1) and the functional group of the unsaturated group-containing compound (a2) Depending on the combination, the reaction temperature, pressure, solvent, time, presence / absence of catalyst, and type of catalyst can be appropriately selected. As a result, the functional group present in the acrylic copolymer (a1) reacts with the functional group in the unsaturated group-containing compound (a2), so that the unsaturated group is contained in the acrylic copolymer (a1). It introduce | transduces into a side chain and an energy-beam curable polymer (A) is obtained.

  The weight average molecular weight of the energy ray curable polymer (A) thus obtained is preferably 10,000 or more, particularly preferably 150,000 to 1,500,000, and more preferably 200,000 000 to 1,000,000 is preferred. In addition, the weight average molecular weight (Mw) in this specification is the value of standard polystyrene conversion measured by the gel permeation chromatography method (GPC method).

  Even when the energy ray curable adhesive is mainly composed of an energy ray curable polymer such as an energy ray curable polymer (A), the energy ray curable adhesive is an energy ray curable monomer. And / or the oligomer (B) may further be contained.

  As the energy ray-curable monomer and / or oligomer (B), for example, an ester of a polyhydric alcohol and (meth) acrylic acid or the like can be used.

  Examples of the energy ray-curable monomer and / or oligomer (B) include monofunctional acrylic acid esters such as cyclohexyl (meth) acrylate and isobornyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, penta Erythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol Polyfunctional acrylic acid esters such as di (meth) acrylate and dimethyloltricyclodecane di (meth) acrylate, polyester oligo (meth) acrylate, polyurethane oligo (meth) Acrylate, and the like.

  When the energy ray curable monomer (B) is blended with the energy ray curable polymer (A), the energy ray curable monomer and / or oligomer (B) in the energy ray curable adhesive is used. ) Content is preferably 10 to 400 parts by mass, and particularly preferably 30 to 350 parts by mass with respect to 100 parts by mass of the energy beam curable polymer (A).

  Here, when using ultraviolet rays as an energy ray for obtaining an energy ray-curable pressure-sensitive adhesive, it is preferable to add a photopolymerization initiator (C). By using this photopolymerization initiator (C), polymerization is performed. Curing time and light irradiation amount can be reduced.

  Specific examples of the photopolymerization initiator (C) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, β-chloranthraquinone, (2,4 6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligo {2-hydroxy-2-methyl 1- [4- (1-propenyl) phenyl] propanone}, and 2,2-dimethoxy-1,2-and the like. These may be used alone or in combination of two or more.

  The photopolymerization initiator (C) is energy beam curable copolymer (A) (when energy beam curable monomer and / or oligomer (B) is blended, energy beam curable copolymer (A). And a total amount of 100 parts by mass of the energy ray-curable monomer and / or oligomer (B)) used in an amount in the range of 0.1 to 10 parts by mass, particularly 0.5 to 6 parts by mass. It is preferred that

  In the energy ray curable pressure-sensitive adhesive, other components may be appropriately blended in addition to the above components. Examples of other components include a non-energy ray curable polymer component or oligomer component (D), and a crosslinking agent (E).

  Examples of the non-energy ray curable polymer component or oligomer component (D) include polyacrylates, polyesters, polyurethanes, polycarbonates, polyolefins, and the like, and the weight average molecular weight (Mw) is 3000 to 2,500,000. Polymers or oligomers are preferred. By mix | blending the said component (D) with energy-beam curable adhesive, the adhesiveness and peelability before hardening, the intensity | strength after hardening, the adhesiveness with another layer, storage stability, etc. can be improved. The compounding quantity of the said component (D) is not specifically limited.

  As a crosslinking agent (E), the polyfunctional compound which has the reactivity with the functional group which an energy-beam curable copolymer (A) etc. have can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, A reactive phenol resin etc. can be mentioned. By mix | blending the said component (E) with an energy-beam curable adhesive, the adhesiveness and peelability before hardening, the cohesiveness of an adhesive, etc. can be improved. The compounding quantity of the said component (E) is not specifically limited, It determines suitably in the range of 0-15 mass parts with respect to 100 mass parts of energy-beam curable copolymers (A).

  Next, the case where the energy beam curable pressure-sensitive adhesive is mainly composed of a mixture of a non-energy beam curable polymer component and a monomer and / or oligomer having at least one energy beam curable group will be described below. .

  As the non-energy ray curable polymer component, for example, the same component as the acrylic copolymer (a1) described above can be used.

  As the monomer and / or oligomer having at least one energy ray-curable group, the same one as the above component (B) can be selected. The blending ratio of the non-energy ray curable polymer component and the monomer and / or oligomer having at least one energy ray curable group is at least one or more with respect to 100 parts by mass of the non-energy ray curable polymer component. The monomer and / or oligomer having an energy ray curable group is preferably 10 to 250 parts by mass, particularly preferably 25 to 100 parts by mass.

  Also in this case, the photopolymerization initiator (C) and the crosslinking agent (E) can be appropriately blended as described above.

  The thickness of the pressure-sensitive adhesive layer 20 is not particularly limited as long as it can function properly in each process in which the semiconductor processing sheet 1 is used. Specifically, the thickness is preferably 1 to 50 μm, particularly preferably 2 to 40 μm, and further preferably 3 to 30 μm.

(2) Adhesive layer The material constituting the adhesive layer 40 is not particularly limited as long as the wafer can be fixed during dicing and an adhesive layer can be formed on the separated chips. Can be used without. Examples of the material constituting the adhesive layer 40 include those composed of a thermoplastic resin and a low molecular weight thermosetting adhesive component, and materials composed of a B-stage (semi-cured) thermosetting adhesive component. Used. Among these, it is preferable that the material constituting the adhesive layer 40 includes a thermoplastic resin and a thermosetting adhesive component. Thermoplastic resins include (meth) acrylic copolymers, polyester resins, urethane resins, phenoxy resins, polybutene, polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, and ethylene (meth) acrylic acid copolymers. Examples include polymers, ethylene (meth) acrylic acid ester copolymers, polystyrene, polycarbonate, polyimide, etc. Among them, (meth) acrylic copolymers from the viewpoint of adhesiveness and film-forming properties (sheet processability) Is preferred. Thermosetting adhesive components include epoxy resins, polyimide resins, phenolic resins, silicone resins, cyanate resins, bismaleimide triazine resins, allylated polyphenylene ether resins (thermosetting PPE), formaldehyde resins , Unsaturated polyesters or copolymers thereof, and among them, epoxy resins are preferable from the viewpoint of adhesiveness. The material constituting the adhesive layer 40 is particularly excellent in adhesiveness to a semiconductor wafer, and in particular from the viewpoint of excellent peelability from the adhesive layer 20 in the semiconductor processing sheet 1d shown in FIG. ) A material containing an acrylic copolymer and an epoxy resin is preferred.

  There is no restriction | limiting in particular as a (meth) acrylic-type copolymer, A conventionally well-known (meth) acrylic-type copolymer can be used. The weight average molecular weight (Mw) of the (meth) acrylic copolymer is preferably 10,000 to 2,000,000, particularly preferably 100,000 to 1,500,000. When the Mw of the (meth) acrylic copolymer is 10,000 or more, the peelability between the adhesive layer 40 and the pressure-sensitive adhesive layer 20 becomes better, and the chip can be picked up effectively. In addition, since the Mw of the (meth) acrylic copolymer is 2,000,000 or less, particularly in the sheet for semiconductor processing 1d shown in FIG. It is possible to follow better and effectively prevent the occurrence of voids and the like.

  The glass transition temperature (Tg) of the (meth) acrylic copolymer is preferably −60 to 70 ° C., and more preferably −30 to 50 ° C. When the Tg of the (meth) acrylic copolymer is −60 ° C. or higher, the peelability between the adhesive layer 40 and the pressure-sensitive adhesive layer 20 becomes better particularly in the semiconductor processing sheet 1d shown in FIG. The chip can be picked up effectively. Moreover, adhesive force for fixing a wafer can fully be acquired because Tg of a (meth) acrylic-type copolymer is 70 degrees C or less.

  Examples of the monomer constituting the (meth) acrylic copolymer include a (meth) acrylic acid ester monomer or a derivative thereof, and more specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (Meth) acrylic acid alkyl ester having 1 to 18 carbon atoms of alkyl group such as (meth) acrylate and butyl (meth) acrylate; (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid benzyl ester, isobornyl ( (Meth) acrylate having a cyclic skeleton such as (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate; Methyl ) Acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxyl-containing, such as hydroxypropyl (meth) acrylate (meth) acrylic acid ester; glycidyl acrylate and glycidyl methacrylate. Moreover, you may use the unsaturated monomer containing carboxy groups, such as acrylic acid, methacrylic acid, and itaconic acid. These may be used individually by 1 type and may use 2 or more types together.

  Among the above, as a monomer constituting the (meth) acrylic copolymer, at least a hydroxy group-containing (meth) acrylic acid ester is preferably used from the viewpoint of compatibility with the epoxy resin. In this case, in the (meth) acrylic copolymer, the structural unit derived from the hydroxy group-containing (meth) acrylic ester is preferably included in the range of 1 to 20% by mass, and in the range of 3 to 15% by mass. More preferably, it is contained. Specifically, the (meth) acrylic copolymer is preferably a copolymer of a (meth) acrylic acid alkyl ester and a hydroxy group-containing (meth) acrylic ester.

  In addition, the (meth) acrylic copolymer may be copolymerized with monomers such as vinyl acetate, acrylonitrile, and styrene as long as the object of the present invention is not impaired.

  Various conventionally known epoxy resins can be used as the epoxy resin. Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, dicyclopentadiene (DCPD) type epoxy resin, biphenyl type epoxy resin. Two or more functional groups are included in the structural unit such as triphenolmethane type epoxy resin, heterocyclic type epoxy resin, stilbene type epoxy resin, condensed ring aromatic hydrocarbon modified epoxy resin, and halides thereof. An epoxy resin is mentioned. These epoxy resins may be used alone or in combination of two or more.

  The epoxy equivalent of the epoxy resin is not particularly limited. The epoxy equivalent is usually preferably 150 to 1000 g / eq. In addition, the epoxy equivalent in this specification is a value measured according to JIS K7236: 2009.

  1-1500 mass parts is preferable with respect to 100 mass parts of (meth) acrylic-type copolymers, and, as for content of an epoxy resin, 3-1000 mass parts is more preferable. Sufficient adhesive force can be acquired because content of an epoxy resin is 1 mass part or more with respect to 100 mass parts of (meth) acrylic-type copolymers. Moreover, since the content of the epoxy resin is 1500 parts by mass or less with respect to 100 parts by mass of the (meth) acrylic copolymer, sufficient film-forming properties can be obtained, and the adhesive layer 40 can be effectively used. Can be formed.

  The material constituting the adhesive layer 40 preferably further includes a curing agent for curing the epoxy resin. Examples of the curing agent include compounds having two or more functional groups capable of reacting with an epoxy group in the molecule, and the functional groups include phenolic hydroxy groups, alcoholic hydroxy groups, amino groups, carboxy groups, and acid anhydrides. Examples include physical groups. In these, a phenolic hydroxy group, an amino group, and an acid anhydride group are preferable, and a phenolic hydroxy group and an amino group are more preferable.

  Specific examples of curing agents include phenolic thermosetting agents such as novolac-type phenolic resins, dicyclopentadiene-based phenolic resins, triphenolmethane-type phenolic resins, and aralkylphenol-based resins; amines such as DICY (dicyandiamide) A thermosetting agent is mentioned. A hardening | curing agent may be used individually by 1 type, and may use 2 or more types together.

  0.1-500 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a hardening | curing agent, 1-200 mass parts is more preferable. Sufficient adhesive force can be obtained because content of a hardening | curing agent is 0.1 mass part or more with respect to 100 mass parts of epoxy resins. Moreover, since the content of the curing agent is 500 parts by mass or less with respect to 100 parts by mass of the epoxy resin, an increase in the moisture absorption rate of the adhesive layer 40 is effectively prevented, and the reliability of the semiconductor package is further improved. It can be excellent.

  In addition to the above, the material constituting the adhesive layer 40 (adhesive composition) may include a curing accelerator, a coupling agent, a cross-linking agent, an energy ray curable compound, a photopolymerization initiator, a plasticizer, and a charge, if desired Various additives such as an inhibitor, an antioxidant, a pigment, a dye, and an inorganic filler may be contained. Each of these additives may be included singly or in combination of two or more.

  The curing accelerator is used to adjust the curing rate of the adhesive composition. As a hardening accelerator, the compound which can accelerate | stimulate reaction with an epoxy group, a phenolic hydroxyl group, an amine, etc. is preferable. Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-di (hydroxymethyl) imidazole, organic phosphines, and tetraphenylboron salts.

  The coupling agent has a function of improving the adhesion and adhesion to the adherend of the adhesive composition. Moreover, the water resistance of the said hardened | cured material can be improved by using a coupling agent, without impairing the heat resistance of the hardened | cured material obtained by hardening | curing adhesive composition. The coupling agent is preferably a compound having a group that reacts with the functional group of the (meth) acrylic polymer and the epoxy resin. As such a coupling agent, a silane coupling agent is preferable.

  There is no restriction | limiting in particular as a silane coupling agent, A well-known thing can be used. For example, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- (methacryloxypropyl) trimethoxysilane, γ -Aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-aminopropyl Trimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane , Bi Examples include nyltrimethoxysilane, vinyltriacetoxysilane, and imidazolesilane. These can be used individually by 1 type or in mixture of 2 or more types.

  The crosslinking agent is for adjusting the cohesive force of the adhesive layer 40. There is no restriction | limiting in particular as a crosslinking agent of the said (meth) acrylic-type polymer, A well-known thing can be used, For example, what was mentioned above as a material which comprises the adhesive layer 20 can be used.

  An energy ray curable compound is a compound that is polymerized and cured when irradiated with energy rays such as ultraviolet rays. By curing the energy ray curable compound by energy ray irradiation, the peelability between the adhesive layer 40 and the pressure-sensitive adhesive layer 20 is improved particularly in the semiconductor processing sheet 1d shown in FIG. It becomes easy to do.

  As the energy ray curable compound, an acrylic compound is preferable, and one having at least one polymerizable double bond in the molecule is particularly preferable. Specific examples of such acrylic compounds include dicyclopentadiene dimethoxydiacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate. 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate, itaconic acid oligomer, and the like.

  The weight average molecular weight of the acrylic compound is usually 100 to 30,000, preferably about 300 to 10,000.

  When the adhesive composition contains an energy ray curable compound, the content of the energy ray curable compound is usually 1 to 400 parts by mass, preferably 3 to 100 parts by mass of the (meth) acrylic polymer. 300 parts by mass, more preferably 10 to 200 parts by mass.

  When the adhesive layer 40 contains the energy beam curable compound, the photopolymerization initiator can reduce the polymerization curing time and the energy beam irradiation amount when polymerized and cured by irradiation with energy rays. . There is no restriction | limiting in particular as a photoinitiator, A well-known thing can be used, For example, what was mentioned above as a material which comprises the adhesive layer 20 can be used.

  The thickness of the adhesive layer 40 is usually 3 to 100 μm, preferably 5 to 80 μm.

(3) Protective film forming layer The protective film forming layer 50 is preferably made of an uncured curable adhesive. In this case, after the semiconductor film or the semiconductor chip is overlaid on the protective film forming layer 50, the protective film forming layer 50 is cured, so that the protective film can be firmly bonded to the semiconductor wafer or the semiconductor chip, A durable protective film can be formed on a chip or the like. The protective film forming layer 50 can be favorably printed by laser light irradiation even when the curable adhesive is uncured or after curing.

  It is preferable that the protective film forming layer 50 has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, when a semiconductor wafer, a semiconductor chip, etc. are overlap | superposed on the protective film formation layer 50 as mentioned above, both can be bonded. Therefore, positioning can be reliably performed before the protective film forming layer 50 is cured, and handling of the semiconductor processing sheets 1c and 1e is facilitated.

  The curable adhesive constituting the protective film forming layer 50 having the above characteristics preferably contains a curable component and a binder polymer component. As the curable component, a thermosetting component, an energy ray curable component, or a mixture thereof can be used. From the viewpoint of the curing method of the protective film forming layer 50 and the heat resistance after curing, it is particularly preferable to use a thermosetting component, and from the viewpoint of curing time, it is preferable to use an energy ray curable component.

  Examples of the thermosetting component include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, benzoxazine resins, and mixtures thereof. Is mentioned. Among these, an epoxy resin, a phenol resin, and a mixture thereof are preferably used. As the thermosetting component, those having a molecular weight of about 300 to 10,000 are usually used.

  Epoxy resins have the property of forming a three-dimensional network and forming a strong film when heated. As such an epoxy resin, various known epoxy resins are used, but those having a weight average molecular weight of about 300 to 2500 are usually preferred. Furthermore, it is preferable to use a normal epoxy liquid resin having a weight average molecular weight of 300 to 500 and a solid epoxy resin having a weight average molecular weight of 400 to 2500, particularly a weight average of 500 to 2000, which are solid at room temperature. . Moreover, it is preferable that the epoxy equivalent of an epoxy resin is 50-5000 g / eq.

  Specific examples of such epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol. Glycidyl ether of carboxylic acid such as phthalic acid, isophthalic acid, tetrahydrophthalic acid, etc .; glycidyl type or alkyl glycidyl type epoxy resin in which active hydrogen bonded to nitrogen atom such as aniline isocyanurate is substituted with glycidyl group; vinylcyclohexane diepoxide 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3 - Epoxy) as cyclohexane -m- dioxane, carbon in the molecule - epoxy is introduced by for example oxidation to carbon double bond include a so-called alicyclic epoxides. In addition, an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like can also be used.

  Among these, bisphenol glycidyl type epoxy resins, o-cresol novolac type epoxy resins and phenol novolak type epoxy resins are preferably used. These epoxy resins can be used alone or in combination of two or more.

  When using an epoxy resin, it is preferable to use a thermally activated latent epoxy resin curing agent in combination as an auxiliary agent. The thermally activated latent epoxy resin curing agent is a type of curing agent that does not react with the epoxy resin at room temperature but is activated by heating at a certain temperature or more and reacts with the epoxy resin. The activation method of the thermally activated latent epoxy resin curing agent includes a method of generating active species (anions and cations) by chemical reaction by heating; There are a method of initiating a curing reaction by dissolving and dissolving with an epoxy resin; a method of starting a curing reaction by eluting at a high temperature with a molecular sieve encapsulated type curing agent; a method using a microcapsule, and the like.

  Specific examples of the thermally activated latent epoxy resin curing agent include various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, high melting point active hydrogen compounds such as imidazole compounds, and the like. These thermally activated latent epoxy resin curing agents can be used singly or in combination of two or more. The thermally activated latent epoxy resin curing agent as described above is preferably 0.1 to 20 parts by mass, particularly preferably 0.2 to 10 parts by mass, and more preferably 0 to 100 parts by mass of the epoxy resin. Used in a ratio of 3 to 5 parts by mass.

  As the phenolic resin, a polymer having a phenolic hydroxy group such as a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol and aldehydes is used without particular limitation. Specifically, phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin Resins or modified products thereof are used.

  The phenolic hydroxy group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating to form a cured product having high impact resistance. For this reason, you may use together an epoxy resin and a phenol resin.

  As an energy-beam curable component, what was mentioned above as a material which comprises the adhesive layer 20, for example can be used. Moreover, you may use an energy beam curable monomer / oligomer as an energy beam curable component. Furthermore, you may use the acrylic polymer to which the energy-beam curable compound was added as a binder polymer component combined with an energy-beam curable component.

  The binder polymer component is blended for the purpose of imparting an appropriate tack to the protective film forming layer 50 or improving the operability of the semiconductor processing sheets 1c and 1e. The weight average molecular weight of the binder polymer is usually in the range of 30,000 to 2,000,000, preferably 50,000 to 1,500,000, particularly preferably 100,000 to 1,000,000. When the weight average molecular weight is 30,000 or more, film formation of the protective film forming layer 50 is sufficient. Moreover, since the weight average molecular weight is 2,000,000 or less, compatibility with other components is maintained well, and the film formation of the protective film forming layer 50 can be performed uniformly. Examples of such a binder polymer include (meth) acrylic copolymers, polyester resins, phenoxy resins, urethane resins, silicone resins, rubber copolymers, and the like. A copolymer is preferably used.

  Examples of the (meth) acrylic copolymer include a (meth) acrylic acid ester copolymer obtained by polymerizing a (meth) acrylic acid ester monomer and a (meth) acrylic acid derivative. Here, the (meth) acrylic acid ester monomer is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth). Acrylate, butyl (meth) acrylate, or the like is used. Examples of the (meth) acrylic acid derivative include (meth) acrylic acid, glycidyl (meth) acrylate, hydroxyethyl (meth) acrylate, and the like.

  Among them, when a glycidyl group is introduced into a (meth) acrylic copolymer using glycidyl methacrylate as a structural unit, the compatibility with the epoxy resin as the thermosetting component described above is improved, and a protective film forming layer The glass transition temperature (Tg) after curing of 50 is increased, and the heat resistance is improved. Further, among the above, when hydroxy groups are introduced into the (meth) acrylic copolymer using hydroxyethyl acrylate or the like as a structural unit, adhesion to a semiconductor wafer, a semiconductor chip or the like and adhesive physical properties can be controlled. In addition, when a glycidyl group is introduced into a (meth) acrylic copolymer using glycidyl methacrylate as a structural unit, the (meth) acrylic copolymer or the phenoxy resin having an epoxy group is thermoset. May have sex. However, such a thermosetting polymer is not a thermosetting component in this embodiment, but corresponds to a binder polymer component.

  When a (meth) acrylic copolymer is used as the binder polymer, the weight average molecular weight of the (meth) acrylic copolymer is preferably 100,000 or more, particularly preferably 150,000 to 1, 000,000. The glass transition temperature of the (meth) acrylic copolymer is usually 20 ° C. or lower, preferably about −70 to 0 ° C., and has adhesiveness at room temperature (23 ° C.).

  As a compounding ratio of the curable component and the binder polymer component, the curable component is preferably 50 to 1500 parts by mass, particularly preferably 70 to 1000 parts by mass, and more preferably 80 to 100 parts by mass of the binder polymer component. It is preferable to blend ~ 800 parts by mass. When the curable component and the binder polymer component are blended in such a ratio, an adequate tack is exhibited before curing, and the sticking operation can be stably performed. After the curing, a protective film having excellent coating strength. Is obtained.

  The protective film forming layer 50 may contain a filler and / or a colorant. However, when the semiconductor processing sheets 1c and 1e are used for chip shape inspection, stealth dicing, or laser printing of semiconductor chips, the protective film forming layer 50 needs to have light transmittance. Therefore, in this case, it is necessary to contain a filler and / or a colorant to such an extent that the light transmittance is not inhibited. On the other hand, when the semiconductor processing sheets 1c and 1e are used for laser printing of the protective film forming layer 50 or a protective film formed by separating the protective film forming layer 50, the protective film forming layer 50 is not required to have light transmittance. In this case, in order to enable laser printing, the protective film forming layer 50 needs to block the laser beam. Therefore, in order to effectively perform laser printing, the protective film forming layer 50 preferably contains a filler and / or a colorant. Moreover, when the protective film formation layer 50 contains a filler, the hardness of the protective film after curing can be maintained high, and moisture resistance can be improved. Furthermore, the gloss of the surface of the protective film to be formed can be adjusted to a desired value. Furthermore, the thermal expansion coefficient of the protective film after curing can be brought close to the thermal expansion coefficient of the semiconductor wafer, thereby reducing the warpage of the semiconductor wafer during processing.

  Examples of the filler include silica such as crystalline silica, fused silica, and synthetic silica, and inorganic filler such as alumina and glass balloon. Among them, synthetic silica is preferable, and synthetic silica of the type from which α-ray sources that cause malfunction of the semiconductor device are removed as much as possible is most suitable. The shape of the filler may be spherical, acicular, or indefinite.

  Moreover, as a filler added to the protective film formation layer 50, a functional filler may be mix | blended other than the said inorganic filler. As the functional filler, for example, for the purpose of imparting antistatic properties, a conductive filler in which gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramic, nickel, aluminum or the like is coated with silver, Examples thereof include metal materials such as gold, silver, copper, nickel, aluminum, stainless steel, silicon, and germanium, and heat conductive fillers such as alloys thereof for the purpose of imparting thermal conductivity.

  As the colorant, known ones such as inorganic pigments, organic pigments and organic dyes can be used.

  Examples of inorganic pigments include carbon black, cobalt dyes, iron dyes, chromium dyes, titanium dyes, vanadium dyes, zirconium dyes, molybdenum dyes, ruthenium dyes, platinum dyes, ITO (indium) Tin oxide) dyes, ATO (antimony tin oxide) dyes, and the like.

  Examples of organic pigments and organic dyes include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squalium dyes, azurenium dyes, polymethine dyes, naphthoquinone dyes, pyrylium dyes, and phthalocyanine dyes. Dyes, naphthalocyanine dyes, naphtholactam dyes, azo dyes, condensed azo dyes, indigo dyes, perinone dyes, perylene dyes, dioxazine dyes, quinacridone dyes, isoindolinone dyes, quinophthalone dyes, Pyrrole dyes, thioindigo dyes, metal complex dyes (metal complex dyes), dithiol metal complex dyes, indolephenol dyes, triallylmethane dyes, anthraquinone dyes, dioxazine dyes, naphthol dyes, azomethine dyes , Be Zuimidazoron based dyes, pyranthrone pigments and threne color like. These pigments or dyes can be appropriately mixed and used in order to adjust to the desired light transmittance.

  Among the above, from the viewpoint of printability by laser light irradiation, it is preferable to use a pigment, particularly an inorganic pigment. Among inorganic pigments, carbon black is particularly preferable. Carbon black is usually black, but the portion scraped off by laser light irradiation is white and the contrast difference is large, so the visibility of the laser-printed portion is very excellent.

  What is necessary is just to adjust suitably the compounding quantity of the filler and coloring agent in the protective film formation layer 50 so that a desired effect | action may be show | played. Specifically, the blending amount of the filler is usually preferably 40 to 80% by mass, and particularly preferably 50 to 70% by mass. Moreover, it is preferable that the compounding quantity of a coloring agent is 0.001-5 mass% normally, It is especially preferable that it is 0.01-3 mass%, Furthermore, it is 0.1-2.5 mass%. Preferably there is.

  The protective film forming layer 50 may contain a coupling agent. By containing the coupling agent, the adhesiveness / adhesion between the protective film and the semiconductor wafer, semiconductor chip, etc. can be improved without damaging the heat resistance of the protective film after the protective film forming layer 50 is cured. In addition, the water resistance (moisture heat resistance) can be improved. As the coupling agent, a silane coupling agent is preferable because of its versatility and cost merit. As the silane coupling agent, for example, those described above can be used.

  The protective film forming layer 50 may contain a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, and an organometallic chelate compound in order to adjust the cohesive force before curing. Further, the protective film forming layer 50 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip. Further, the protective film forming layer 50 may contain a flame retardant such as a phosphoric acid compound, a bromine compound, or a phosphorus compound in order to enhance the flame retardance performance of the protective film and improve the reliability as a package. Good.

  The thickness of the protective film forming layer 50 is preferably 3 to 300 μm, particularly preferably 5 to 250 μm, and more preferably 7 to 200 μm in order to effectively exert the function as the protective film. It is preferable.

  The gloss value of the first surface 501 of the protective film forming layer 50 is preferably 25 or more, and particularly preferably 30 or more. When the gloss value of the first surface 501 is 25 or more, when laser printing is performed on the surface, the aesthetic appearance is excellent and the formed printing is highly visible. The gloss value in this specification is a value measured using a gloss meter at a measurement angle of 60 ° in accordance with JIS Z8741: 1997.

5. Jig pressure-sensitive adhesive layer The semiconductor processing sheet according to the present embodiment may further include a jig pressure-sensitive adhesive layer. FIG. 8 shows a cross-sectional view of the semiconductor processing sheet 2 according to the second embodiment including the jig pressure-sensitive adhesive layer 60. In this semiconductor processing sheet 2, the jig adhesive layer 60 has a first surface 601 on the side proximal to the semiconductor adhesive layer 80 and a second surface 602 on the side proximal to the release film 30. Have Moreover, the adhesive layer 60 for jig | tool is formed in the shape corresponding to the shape of jig | tools, such as a ring frame, and is normally formed in cyclic | annular form. Thereby, irrespective of the adhesive force of the semiconductor sticking layer 80, the semiconductor processing sheet 2 can be stuck on a jig such as a ring frame and fixed securely.

  In the semiconductor processing sheet 2 according to the second embodiment, as shown in FIG. 8, the jig adhesive layer 60 is in contact with the first surface 301 of the release film 30. Further, as shown in FIG. 8, in the central portion of the semiconductor processing sheet 2 where the jig adhesive layer 60 does not exist, the second surface of the semiconductor adhesive layer 80 is formed on the first surface 301 of the release film 30. The surface 802 is in contact. Here, in the semiconductor processing sheet 2 according to the second embodiment, when the semiconductor processing sheet 2 is rolled up, the winding pressure is concentrated at the position where the jig pressure-sensitive adhesive layer 60 is present. Along with this, blocking is also likely to occur at the position where the jig pressure-sensitive adhesive layer 60 is present. Therefore, whether or not the semiconductor processing sheet 2 can be successfully unwound from the roll is greatly influenced by the adhesion between the first surface 301 of the release film 30 and the second surface 602 of the adhesive layer 60 for jigs. . Therefore, in the semiconductor processing sheet 2, the peeling force at the interface between the second surface 602 of the jig pressure-sensitive adhesive layer 60 and the first surface 301 of the peeling film 30 is defined as a peeling force β. Specifically, the peeling force β is 3 at 40 ° C. under predetermined conditions in a state where the second surface 602 of the adhesive layer 60 for jigs and the first surface 301 of the release film 30 are laminated. It is set as the peeling force of the peeling film 30 with respect to the adhesive layer 60 for jigs after storing for days. On the other hand, as for the peeling force α, similarly to the semiconductor processing sheet 1 according to the first embodiment described above, at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the peeling film 30. Let it be peeling force.

  The pressure-sensitive adhesive layer 60 for jigs in the present embodiment may be composed of a single layer or may be composed of two or more multilayers. In the case of multilayers, it is preferable that the core material is interposed. .

  The pressure-sensitive adhesive constituting the jig-use pressure-sensitive adhesive layer 60 is preferably composed of a non-energy ray-curable pressure-sensitive adhesive from the viewpoint of the adhesive strength to a jig such as a ring frame. As the non-energy ray curable adhesive, those having desired adhesive strength and removability are preferable. For example, acrylic adhesive, rubber adhesive, silicone adhesive, urethane adhesive, polyester adhesive An acrylic pressure-sensitive adhesive that can easily control the adhesive strength and removability is preferable.

  As the core material, a resin film is usually used, among which a polyvinyl chloride film such as a polyvinyl chloride film and a vinyl chloride copolymer film is preferable, and a polyvinyl chloride film is particularly preferable. Even if the polyvinyl chloride film is softened by heating, it has a property of being easily restored when cooled. The thickness of the core material is preferably 2 to 200 μm, and particularly preferably 5 to 100 μm.

  The thickness of the jig pressure-sensitive adhesive layer 60 is preferably 5 to 200 μm, particularly preferably 10 to 100 μm, from the viewpoint of adhesion to a jig such as a ring frame.

  The semiconductor processing sheet 2 having the jig pressure-sensitive adhesive layer 60 has an arithmetic average roughness Ra of 0.01 to 0.8 μm on the first surface 101 of the substrate 10, so that the smoothness on the surface is It becomes favorable and at least the base material 10 has high light transmittance with respect to light of a desired wavelength. Furthermore, since the release film has a release agent layer on the second surface side, excellent blocking resistance is exhibited, and the semiconductor processing sheet 2 can be fed out from the roll satisfactorily. In this case, unintended peeling does not occur. Moreover, when the peeling force β is 10 to 1000 mN / 50 mm, when using the semiconductor processing sheet 2, the peeling film 30 to the substrate 10, the semiconductor adhesive layer 80, and the jig adhesive can be used with an appropriate peeling force. The laminate including the agent layer 60 can be peeled off.

6). Precut The semiconductor processing sheet according to the present embodiment may be in a so-called precut state in which layers other than the release film 30 are cut into a desired shape. That is, in the semiconductor processing sheet according to the present embodiment, a laminate including the substrate 10 and the semiconductor adhesive layer 80 having a shape different from that of the release film 30 in plan view is laminated on the long release film 30. It may be. FIG. 9 shows a plan view of such a pre-cut semiconductor processing sheet 3 according to the third embodiment as viewed from the substrate side. In the semiconductor processing sheet 3, a laminated body (hereinafter sometimes referred to as “main use part”) of the base material 10 a cut into a circle and the semiconductor adhesive layer 80 a is provided on the long release film 30. Yes. A plurality of main use portions are arranged in the long side direction of the release film 30. Moreover, the laminated body (henceforth "sheet residual part") of the base material 10b and the semiconductor sticking layer 80b cut so that it may not contact a main use part at the both ends of the long side direction of the peeling film 30 may be mentioned. .) Is provided. FIG. 10 is a cross-sectional view taken along the line AA in FIG.

  The pre-cut semiconductor processing sheet 3 also satisfies the physical properties described above for the semiconductor processing sheet 1. Moreover, as each layer which comprises the semiconductor processing sheet 3, what was mentioned above about the semiconductor processing sheet 1 can be used.

  Further, the semiconductor processing sheet 2 including the jig adhesive layer 60 described above can be a precut sheet. In the sheet, the adhesive layer 60 for jigs is provided on the peripheral edge of the main use part.

  In the semiconductor processing sheet 3, the main use part is attached to a semiconductor wafer, a semiconductor chip, or the like after being peeled from the release film 30. On the other hand, the sheet remaining portion prevents the winding pressure when the semiconductor processing sheet 3 is rolled up from being concentrated on the main use portion.

  Generally, in a pre-cut semiconductor processing sheet, when the roll is unwound from the roll, the main use part is peeled off from the release film, or the base side of the peeled main use part is attached to the second surface of the release film. Problems are likely to occur. However, according to the semiconductor processing sheet 3 according to the third embodiment, the release film is provided with a release agent layer on the second surface side thereof, so that the semiconductor processing sheets 3 are hardly adhered to each other. Generation | occurrence | production of such a malfunction is suppressed. In addition, since the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 μm, the smoothness on the surface becomes favorable, and at least the substrate 10 has a desired wavelength. It has a high light transmittance for light. Furthermore, when the peeling force β is 10 to 1000 mN / 50 mm, the release film 30 can be peeled from the semiconductor adhesive layer 80 with an appropriate peeling force when the semiconductor processing sheet 3 is used.

7). The manufacturing method of the sheet | seat for semiconductor processing The manufacturing method of the sheet | seat 1a for semiconductor processing containing the adhesive layer 20 is not specifically limited, A normal method can be used. As a first example of the production method, first, a pressure-sensitive adhesive composition containing the material of the pressure-sensitive adhesive layer 20 and, if desired, a coating composition further containing a solvent or a dispersion medium are prepared. Next, this coating composition is applied onto the first surface 301 of the release film 30 by a die coater, curtain coater, spray coater, slit coater, knife coater, or the like to form a coating film. Furthermore, the adhesive layer 20 can be formed by drying the coating film. Then, the sheet | seat 1a for semiconductor processing is obtained by bonding the 1st surface 201 of the adhesive layer 20, and the 2nd surface 102 of the base material 10. FIG. The properties of the coating composition are not particularly limited as long as it can be applied. The component for forming the pressure-sensitive adhesive layer 20 may be contained as a solute in the coating composition, or may be contained as a dispersoid.

  When the coating composition contains a crosslinking agent (E), the above drying conditions (temperature, time, etc.) may be changed or heat treatment may be performed in order to form a crosslinked structure at a desired density. It may be provided separately. In order to sufficiently advance the crosslinking reaction, usually, after the pressure-sensitive adhesive layer is laminated on the base material by the above-described method, the obtained semiconductor processing sheet 1a is placed in an environment of, for example, 23 ° C. and a relative humidity of 50%. Caring for a few days.

  As a second example of the method for manufacturing the semiconductor processing sheet 1a, first, the coating composition is applied onto the second surface 102 of the substrate 10 to form a coating film. Next, the said coating film is dried and the laminated body which consists of the base material 10 and the adhesive layer 20 is formed. Furthermore, the sheet | seat 1a for semiconductor processing is obtained by bonding the 2nd surface 202 of the adhesive layer 20 in this laminated body, and the 1st surface 301 of the peeling film 30. FIG.

  The manufacturing method of the semiconductor processing sheet 1b including the adhesive layer 40 is not particularly limited, and a conventional method can be used. For example, by applying an adhesive composition including the material of the adhesive layer 40 and, if desired, a coating composition further containing a solvent or a dispersion medium onto the first surface 301 of the release film 30 and drying it. An adhesive layer 40 is formed. Then, the sheet | seat 1b for semiconductor processing is obtained by bonding the 1st surface 401 of the adhesive bond layer 40, and the 2nd surface 102 of the base material 10. FIG.

  The manufacturing method of the semiconductor processing sheet 1c including the protective film forming layer 50 can be manufactured with reference to the manufacturing method of the semiconductor processing sheet 1b described above. In particular, in the manufacturing method of the semiconductor processing sheet 1b, the semiconductor processing sheet is obtained by replacing the adhesive composition containing the material of the adhesive layer 40 with the protective film forming layer composition containing the material of the protective film forming layer 50. 1c can be obtained.

  The manufacturing method of the semiconductor processing sheet 1d including the pressure-sensitive adhesive layer 20 and the adhesive layer 40 is not particularly limited, and a conventional method can be used. For example, by applying an adhesive composition including the material of the adhesive layer 40 and, if desired, a coating composition further containing a solvent or a dispersion medium onto the first surface 301 of the release film 30 and drying it. An adhesive layer 40 is formed. Thereby, the laminated body of the peeling film 30 and the adhesive bond layer 40 is obtained. Next, the release film 30 is peeled from the semiconductor processing sheet 1a prepared in advance, and the exposed adhesive layer 20 side surface and the adhesive layer 40 side surface of the laminate are bonded to each other. Sheet 1d is obtained.

  The semiconductor processing sheet 1e including the pressure-sensitive adhesive layer 20 and the protective film forming layer 50 can be manufactured with reference to the manufacturing method of the semiconductor processing sheet 1d described above. In particular, in the method for manufacturing the semiconductor processing sheet 1d, the adhesive composition containing the material of the adhesive layer 40 is replaced with the protective film forming layer composition containing the material of the protective film forming layer 50, thereby providing the semiconductor processing sheet. 1e can be obtained.

  The semiconductor processing sheet 2 including the jig pressure-sensitive adhesive layer 60 can be manufactured by a conventional method. For example, semiconductor processing is performed by laminating a pressure-sensitive adhesive layer 60 for jigs formed in a desired shape on a surface opposite to the substrate 10 in a laminate including the substrate 10 and the semiconductor adhesive layer 80 and the like. Sheet 2 can be manufactured.

  Moreover, when making the sheet | seat 2 for semiconductor processing containing the adhesive layer 60 for jig | tool into the sheet | seat pre-cut, it can manufacture as follows, for example. First, the adhesive for jigs for forming the adhesive layer 60 for jigs is formed in a sheet form on the peeling surface of the release film 30. Next, in this sheet-shaped jig pressure-sensitive adhesive, the part that becomes the inner peripheral edge of the jig pressure-sensitive adhesive layer 60 is cut (half-cut) with the release film 30 being left, Remove the inner circular part. Next, the base material 10 and the semiconductor adhesive layer 80 prepared separately are prepared on the sheet-like jig pressure-sensitive adhesive side surface of the laminate comprising the sheet-like jig pressure-sensitive adhesive and the release film 30 after the circular portion is removed. It sticks to the surface at the side of the semiconductor sticking layer 80 of the laminated body which consists of. Thereby, the laminated body by which the peeling film 30, the adhesive for sheet-like jig | tool, the semiconductor sticking layer 80, and the base material 10 were laminated | stacked in order is obtained. Finally, in this laminated body, the release film 30 is left, and the adhesive for the sheet-like jig, the semiconductor adhesive layer 80, and the substrate 10 are cut (half cut). At this time, the part used as the outer periphery of the adhesive layer 60 for jig | tool is cut | disconnected (half cut) leaving the peeling film 30, and a main use part can be formed by removing an unnecessary part. Thereby, the adhesive for sheet-like jigs becomes an annular adhesive layer 60 for jigs. Further, the remaining sheet portion can be formed by appropriately half-cutting the position other than the portion to be the main use portion.

  The manufacturing method of the pre-cut semiconductor processing sheet 3 is not particularly limited, and a conventional method can be used.

8). Method for Using Semiconductor Processing Sheet The semiconductor processing sheets 1, 2, and 3 according to this embodiment can be used as a back grind sheet, a dicing sheet, or the like. When the sheets 1, 2, and 3 are used, dicing can be performed by irradiating a laser from the back of the sheet. In addition, after the steps such as back grinding and dicing, the shape of the wafer or chip can be inspected via the semiconductor processing sheets 1, 2, and 3 according to the present embodiment. Furthermore, laser printing can be performed on the back surface of the wafer or chip via the semiconductor processing sheets 1, 2, 3 according to the present embodiment.

  In particular, the semiconductor processing sheets 1b and 1d including the adhesive layer 40 can be used as a dicing die bonding sheet. That is, the protective film can be formed on the back surface of the chip by using the semiconductor processing sheets 1b and 1d. In this case, a wafer is stuck on the semiconductor processing sheets 1c and 1e including the protective film forming layer 50, and the protective film forming layer 50 is cured. Subsequently, the wafer is diced on the semiconductor processing sheets 1c and 1e, and an expanding process is performed as necessary. Then, the chip | tip with which the adhesive bond layer was provided can be obtained by picking up the obtained chip | tip. Furthermore, after the wafer is diced on the semiconductor processing sheets 1c and 1e including the protective film forming layer 50, and an expansion process is performed as necessary, the resulting chip is picked up so that a protective film is formed on the back surface. A formed chip can be obtained.

  The semiconductor processing sheets 1, 2, 3 according to the present embodiment can be rolled up for storage or the like. Even if it is a case where the sheet | seat 1, 2, 3 for semiconductor processing which concerns on this embodiment is wound up in this way, as above-mentioned, a peeling film is provided with a releasing agent layer in the 2nd surface side. The semiconductor processing sheets 1, 2, 3 according to this embodiment are difficult to adhere to each other. For this reason, excellent blocking resistance is exhibited, the semiconductor processing sheets 1, 2, 3 according to the present embodiment can be fed out from the rolls satisfactorily. Peeling can be suppressed. In addition, since the arithmetic average roughness Ra on the first surface of the base material 10 is 0.01 to 0.8 μm, the smoothness on the surface becomes good, and the base material 10 is resistant to light of a desired wavelength. High light transmittance. As a result, laser dicing, inspection, and laser printing from the back surface as described above can be performed satisfactorily. Further, since the peeling force β is 10 to 1000 mN / 50 mm, when the wafer is attached to the semiconductor processing sheets 1, 2, and 3 according to this embodiment, the peeling film 30 can be removed from the release film 30 with an appropriate peeling force. The laminate including the material 10 and the semiconductor adhesive layer 80 can be peeled off.

  The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  For example, another layer may be interposed between the base material 10 and the semiconductor adhesive layer 80 in the semiconductor processing sheets 1, 2, and 3 according to the present embodiment.

  EXAMPLES Hereinafter, although an Example etc. demonstrate this invention further more concretely, the scope of the present invention is not limited to these Examples etc.

[Example 1]
(1) Production of base material As a base material, a polyvinyl chloride film was produced by a calendering method. The polyvinyl chloride film has an arithmetic average roughness Ra of the first surface of 0.03 μm, and a tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured in accordance with JIS K7161: 1994 is 250 MPa. And the thickness was 80 μm.

  In addition, arithmetic average roughness Ra in a present Example measured 10 points in-plane according to JIS B0601: 2013 using a tactile surface roughness meter ("SURFTEST SV-3000" manufactured by Mitsutoyo), The average value is calculated.

  Further, the substrate alone was evaluated for the transparency of the printing laser beam (wavelength: 532 nm), the transparency of the stealth dicing laser beam (wavelength: 1600 nm), and the transparency of the inspection infrared ray (wavelength: 1069 nm). However, in all cases, excellent permeability was shown.

(2) Production of release film A release film (product name “SP-PET381031”, manufactured by Lintec Corporation, thickness: 38 μm) obtained by releasing one side (first side) of a polyethylene terephthalate film with a silicone release agent The other surface (second surface) was stripped using an alkyd stripper. As the alkyd release agent, an alkyd release agent layer in a release film (product name “SP-PET38AL-5” manufactured by Lintec Corporation) in which an alkyd release agent layer is provided on one side of a 38 μm thick polyethylene terephthalate film. An alkyd release agent for forming the film was used. As a result, a release film was obtained in which the first surface was peeled with a silicone release agent and the second surface was peeled with an alkyd release agent. The arithmetic average roughness Ra of the first surface of the release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.03 μm.

(3) Preparation of pressure-sensitive adhesive composition (I) 18.5 parts by mass of 2-ethylhexyl acrylate (in terms of solid content, hereinafter the same), 75 parts by mass of vinyl acetate, 1 part by mass of acrylic acid, and 5 parts by mass of methyl methacrylate And 0.5 part by mass of 2-hydroxyethyl methacrylate were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 600,000.

  100 parts by mass of the obtained acrylic copolymer, 60 parts by mass of a bifunctional urethane acrylate oligomer (Mw = 8000) as an energy ray curable compound, and a 6 functional urethane acrylate oligomer (Mw =) as an energy ray curable compound 2000) 60 parts by mass, 3 parts by mass of α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name “Irgacure 184”) as a photopolymerization initiator, and trimethylolpropane-modified tolylene diisocyanate (Tosoh Corporation) as a crosslinking agent 1.6 parts by mass of product (product name “Coronate L”) were mixed in a solvent to obtain a coating solution of the pressure-sensitive adhesive composition (I).

(4) Production of sheet for semiconductor processing The coating solution of the pressure-sensitive adhesive composition (I) obtained in the step (3) was applied to the first surface of the release film produced in the step (2) using a knife coater. It was applied with. Next, the film was treated at 100 ° C. for 1 minute to dry the coating film and advance the crosslinking reaction. Thereby, the laminated body which consists of a peeling film and a 10-micrometer-thick adhesive layer was obtained. Furthermore, a base material, an adhesive layer, and a peeling film are bonded by bonding the 1st surface of the adhesive layer in the said laminated body, and the 2nd surface of the base material produced at the said process (1). A semiconductor processing sheet laminated in order was obtained. Thereafter, the semiconductor processing sheet was cured for 7 days in an environment of a temperature of 23 ° C. and a relative humidity of 50%.

[Example 2]
(1) Preparation of base material As a base material, an ethylene-methacrylic acid copolymer film was prepared by a T-die film forming method. The ethylene-methacrylic acid copolymer film has an arithmetic average roughness Ra of the first surface of 0.05 μm, and a tensile elastic modulus (Young's modulus in the MD direction at 23 ° C. measured according to JIS K7161: 1994. ) Was 130 MPa and the thickness was 80 μm.

  In addition, about the said base material single-piece | unit, the transmittance | permeability of the laser beam for printing (wavelength: 532 nm), the transmittance | permeability of the laser beam for stealth dicing (wavelength: 1600 nm), and the transmittance | permeability of the infrared rays for inspection (wavelength: 1069 nm) were evaluated. However, in all cases, excellent permeability was shown.

(2) Preparation of pressure-sensitive adhesive composition (II) 99 parts by mass of butyl acrylate and 1 part by mass of acrylic acid were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 600,000.

  Next, 100 parts by mass of the obtained acrylic copolymer, 120 parts by mass of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd., product name “KAYARAD DPHA) as an energy ray-curable monomer, and a photopolymerization initiator 3 parts by mass of α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name “Irgacure 184”) and 17 parts by mass of trimethylolpropane-modified tolylene diisocyanate (product name “Coronate L”, manufactured by Tosoh Corporation) as a crosslinking agent Were mixed in a solvent to obtain a coating solution of the pressure-sensitive adhesive composition (II).

(3) Preparation of semiconductor processing sheet A semiconductor as in Example 1 except that the base material made of an ethylene-methacrylic acid copolymer and the pressure-sensitive adhesive composition (II) prepared as described above were used. A processing sheet was prepared.

Example 3
(1) Production of release film A release film (product name “SP-PET382150”, manufactured by Lintec Co., Ltd., thickness: 38 μm) obtained by removing one surface (first surface) of a polyethylene terephthalate film with a silicone-based release agent. The other surface (second surface) was stripped using the same alkyd stripper as used in Example 1. As a result, a release film was obtained in which the first surface was peeled with a silicone release agent and the second surface was peeled with an alkyd release agent. The arithmetic average roughness Ra of the first surface of the release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.03 μm.

(2) Preparation of sheet for semiconductor processing The first surface prepared as described above was subjected to a release treatment with a silicone release agent, and the second surface was a release film that was release treatment with an alkyd release agent. A semiconductor processing sheet was prepared in the same manner as in Example 2.

[Comparative Example 1]
Except for using a release film (product name “SP-PET 381031”, thickness: 38 μm) manufactured by Lintec Co., Ltd.) on which one surface (first surface) of a polyethylene terephthalate film was subjected to a release treatment with a silicone release agent, as a release film, A semiconductor processing sheet was produced in the same manner as in Example 1. In addition, arithmetic mean roughness Ra of the 1st surface of the said peeling film was 0.03 micrometer, and arithmetic mean roughness Ra of the other surface (2nd surface) was 0.05 micrometer.

[Comparative Example 2]
(1) Preparation of base material As a base material, an ethylene-vinyl acetate copolymer film was prepared by a T-die film forming method. The ethylene-vinyl acetate copolymer film has an arithmetic average roughness Ra of the first surface of 0.06 μm, and a tensile modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994. ) Was 75 MPa, and the thickness was 100 μm.

  In addition, about the said base material single-piece | unit, the transmittance | permeability of the laser beam for printing (wavelength: 532 nm), the transmittance | permeability of the laser beam for stealth dicing (wavelength: 1600 nm), and the transmittance | permeability of the infrared rays for inspection (wavelength: 1069 nm) were evaluated. However, in all cases, excellent permeability was shown.

(2) Preparation of pressure-sensitive adhesive composition (III) 40 parts by mass of 2-ethylhexyl acrylate, 40 parts by mass of vinyl acetate and 20 parts by mass of hydroxyethyl acrylate were copolymerized to produce an acrylic system having a weight average molecular weight of 420,000. A copolymer was obtained.

  Next, by reacting 100 parts by mass of the obtained acrylic copolymer with 30.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) as an energy ray-curable group-containing compound, energy rays are added to the side chain. An energy ray curable polymer having a curable group (methacryloyl group) introduced therein was obtained.

  100 parts by mass of the obtained energy beam curable polymer, 3 parts by mass of α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name “Irgacure 184”) as a photopolymerization initiator, and trimethylolpropane as a crosslinking agent 1.1 parts by mass of modified tolylene diisocyanate (manufactured by Tosoh Corporation, product name “Coronate L”) was mixed in a solvent to obtain a coating solution of the pressure-sensitive adhesive composition (III).

(3) Preparation of semiconductor processing sheet A semiconductor as in Comparative Example 1 except that the base material made of an ethylene-vinyl acetate copolymer and the adhesive composition (III) prepared as described above were used. A processing sheet was prepared.

[Comparative Example 3]
Example 2 except that a release film made of polyethylene terephthalate film (manufactured by Mitsubishi Plastics, product name “Diafoil (registered trademark) T-100 38”, thickness: 38 μm, no double-sided release treatment) was used as the release film. Similarly, a semiconductor processing sheet was produced. The arithmetic average roughness Ra on both surfaces of the release film was 0.05 μm.

[Test Example 1] (Measurement of peel force α)
The semiconductor processing sheets produced in the examples and comparative examples were cut into a width of 50 mm and a length of 100 mm. At this time, it cut | judged so that the flow direction (MD direction) at the time of manufacture of the sheet | seat for semiconductor processing might become a length direction. Ten semiconductor processing sheets cut in this manner were laminated with the base material as the upper side, and this laminate was sandwiched from above and below by a glass plate having a width of 75 mm, a length of 15 mm, and a thickness of 5 mm. Then, with the weight of 500 g placed on the upper glass plate, it was stored for 3 days in a moist heat accelerator (manufactured by ESPEC, product name “SH641”) set in a dry state at 40 ° C. In addition, when the sheet | seat for semiconductor processing contains an energy-beam curable material, it stored in the state which light-shielded the laminated body.

  After storage is completed, from the above laminate, two conductor processing sheets, a semiconductor processing sheet located in the outermost layer and a semiconductor processing sheet adjacent thereto, are used as measurement samples in a state where they overlap. Separated. Subsequently, the release film located in the outermost layer of the sample for measurement was peeled off, and the exposed adhesive surface was bonded to a stainless steel plate using a double-sided adhesive tape. : Tensilon UTM-4-100). Thereafter, under the conditions of a temperature of 23 ° C. and a relative humidity of 50% RH, the semiconductor processing sheet located farthest from the stainless steel plate is pulled from the overlapping semiconductor processing sheet in a 180 ° direction at a pulling speed of 300 mm / min. It peeled. That is, it was made to peel between the 1st surface of a base material, and the 2nd surface of a peeling film. The force at this time was measured, and this was defined as a peeling force α (mN / 50 mm). The results are shown in Table 2.

[Test Example 2] (Measurement of peel force β)
In the same manner as in Test Example 1, a laminate composed of 10 semiconductor processing sheets was prepared and stored at 40 ° C. for 3 days. One sheet for semiconductor processing is taken out from this laminate, and the first surface of the base material is bonded to a stainless steel plate using a double-sided adhesive tape, and a universal tensile testing machine (product name: Tensilon UTM, manufactured by Orientec Co., Ltd.). -4-100). Thereafter, only the release film was peeled in the 180 ° direction at a tensile speed of 300 mm / min under the conditions of a temperature of 23 ° C. and a relative humidity of 50% RH. That is, it was made to peel between the 1st surface of a peeling film and the 2nd surface of an adhesive. The force at this time was measured, and this was defined as a peeling force β (mN / 50 mm). The results are shown in Table 2. Further, based on the peel force β and the peel force α measured in Test Example 1, the value (α / β) of the ratio of the peel force α to the peel force β was calculated. The results are shown in Table 2.

[Test Example 3] (Evaluation of feeding from roll)
The semiconductor processing sheets produced in the examples and comparative examples were prepared as long sheets having a width of 290 mm. And the cut | notch was made from the base material side, and the circular main use part and sheet | seat residual part were formed as FIG. 9 shows. At this time, only layers other than the release film were cut (half cut), and the diameter of the main use part was 270 mm. Thereafter, the base material and the pressure-sensitive adhesive layer (in addition, the adhesive layer or the protective film forming layer, if present) other than the main use part and the sheet remaining part were removed. This obtained the semiconductor processing sheet | seat which has 100 main use parts. The said semiconductor processing sheet was wound up so that the base material side might become an outer side, and it was set as the roll shape.

  The roll-shaped semiconductor processing sheet thus obtained was stored for 3 days in a moist heat accelerator (manufactured by ESPEC, product name “SH641”) set to a dry state at 40 ° C. The semiconductor processing sheet was When the energy ray-curable material was included, the laminate was stored in a state where it was shielded from light.

  After the storage was completed, the semiconductor processing sheet wound up in a roll shape was fed out using a wafer mounter (manufactured by Lintec Corporation, product name “RAD-2500m / 8”). And in the both ends of the length direction of the sheet for semiconductor processing, the area where there are 20 main use parts (that is, the area where there are 20 main use parts in the outer part of the roll, and the inner part) It was confirmed whether or not good feeding was possible for an area where there were 20 main use parts). At this time, it was evaluated as “good” when it could be fed out continuously for 20 main use portions in any region. On the other hand, when even one piece of inconvenience occurred that the main use part that was overlaid on the second surface of the release film was in close contact with each other and could not be fed out, it was evaluated as x. The results are shown in Table 2.

[Test Example 4] (Mount evaluation)
In the same manner as in Test Example 3, a roll-shaped semiconductor processing sheet was prepared and stored at 40 ° C. for 3 days. Then, using a wafer mounter (product name “RAD-2500m / 8” manufactured by Lintec Corporation), the main use part was peeled off from the release film of this roll, and the main use part was attached (mounted) to the semiconductor wafer. . This operation was repeated 20 times continuously, and when it was successfully completed, it was evaluated as “good”. On the other hand, when a defect occurred in the mount due to defective peeling of the main use part from the release film, it was evaluated as x. The results are shown in Table 2.

Table 1 summarizes the configurations of the semiconductor processing sheets produced in the examples and comparative examples. The details of the abbreviations listed in Table 1 are as follows.
[Base material]
-PVC: Polyvinyl chloride-EMAA: Ethylene-methacrylic acid copolymer-EVA: Ethylene-vinyl acetate copolymer

[Test Example 5] (Evaluation of light transmittance)
For semiconductor processing after completion of storage for 3 days in Test Example 3 using a wafer mounter (product name “RAD-2500m / 8”, manufactured by Lintec Corporation) on the mirror surface of a silicon wafer having a thickness of 350 μm A sheet and a ring frame were attached. Thereafter, the silicon wafer was diced using a dicing apparatus (manufactured by DISCO, product name “DFD-651”) under the following conditions.
Dicing conditions:
・ Work (object to be cut): Silicon wafer (size: 6 inches, thickness: 350 μm, sticking surface: mirror)
・ Dicing blade: manufactured by Disco Corporation, product name “27HECC”
・ Blade rotation speed: 30,000rpm
・ Dicing speed: 10 mm / second ・ Cutting depth: Cutting from the surface of the substrate opposite to the dicing machine table to a depth of 20 μm ・ Dicing size: 5 mm × 5 mm

  About the chip | tip stuck on the sheet | seat for semiconductor processing obtained by the said dicing, from the surface (2nd surface of a base material) side opposite to the chip | tip in the sheet | seat for semiconductor processing, a chip | tip of a chip | tip is passed through the sheet | seat for semiconductor processing. It was visually confirmed whether the peripheral edge and the corner could be recognized. When the peripheral edge and corner of the chip were confirmed, the light transmittance (visible light transmittance) was good (◯), and when the chip was not confirmed, the light transmittance (visible light transmittance) was evaluated as poor (×). did. The results are shown in Table 2.

  As is clear from Table 2, the semiconductor processing sheets of the examples were excellent in light transmittance, and excellent evaluation was obtained both in the feeding from the roll and in the mount. On the other hand, in the semiconductor processing sheet of the comparative example, a problem occurred in either the feeding from the roll or the mounting.

  The semiconductor processing sheet according to the present invention is suitably used, for example, as a dicing sheet, a dicing die bonding sheet, a protective film forming layer integrated dicing sheet, or the like.

1, 1 a, 1 b, 1 c, 1 d, 1 e, 2, 3... Semiconductor processing sheet 10, 10 a, 10 b... Substrate 101 .. first surface 102 .. second surface 20. Surface 202 ... Second surface 30 ... Peeling film 301 ... First surface 302 ... Second surface 40 ... Adhesive layer 401 ... First surface 402 ... Second surface 50 ... Protective film forming layer 501 ... First Surface 502 ... Second surface 60 ... Jig adhesive layer 601 ... First surface 602 ... Second surface 80, 80a, 80b ... Semiconductor adhesive layer 801 ... First surface 802 ... Second surface

Claims (9)

A base material having a first surface and a second surface located opposite to the first surface; and a second surface side of the base material that is laminated on the second surface side, A semiconductor adhesive layer having a first surface and having a second surface on the side distal to the base material; and a side that is laminated on the second surface side of the semiconductor adhesive layer and is proximal to the semiconductor adhesive layer A semiconductor processing sheet comprising at least a release film having a first surface and a second surface on a side distal to the semiconductor adhesive layer,
The arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm,
The release film comprises a release agent layer on each of the first surface side and the second surface side of the release film,
The second surface of the semiconductor adhesive layer and the first surface of the release film after the second surface of the semiconductor adhesive layer and the first surface of the release film are attached and stored at 40 ° C. for 3 days. A semiconductor processing sheet characterized by having a peeling force β at the interface with the surface of 10 to 1000 mN / 50 mm.   The first surface of the base material and the second surface of the release film after the first surface of the base material and the second surface of the release film are laminated and stored at 40 ° C. for 3 days The value (α / β) of the ratio of the peeling force α to the peeling force β (α / β) is 0 or more and less than 1.0, where α is the peeling force at the interface. The semiconductor processing sheet as described.   The semiconductor processing sheet according to claim 1, wherein the semiconductor adhesive layer is an adhesive layer.   The semiconductor processing sheet according to claim 1, wherein the semiconductor sticking layer is an adhesive layer.   The semiconductor processing sheet according to claim 1, wherein the semiconductor adhesive layer is a protective film forming layer.   The said semiconductor sticking layer is comprised from the adhesive layer and the adhesive bond layer located between the said adhesive layer and the said peeling film, The sheet | seat for semiconductor processing of Claim 1 or 2 characterized by the above-mentioned.   The said semiconductor sticking layer is comprised from the adhesive layer and the protective film formation layer located between the said adhesive layer and the said peeling film, The sheet | seat for semiconductor processing of Claim 1 or 2 characterized by the above-mentioned. .   The semiconductor processing sheet is formed by laminating a laminate including the base material and the semiconductor adhesive layer having a shape different from that of the release film in a plan view on the long release film. The sheet for semiconductor processing according to any one of claims 1 to 7. A base material having a first surface and a second surface located opposite to the first surface; and a second surface side of the base material that is laminated on the second surface side, A semiconductor adhesive layer having a first surface and having a second surface on the side distal to the base material; and a side that is laminated on the second surface side of the semiconductor adhesive layer and is proximal to the semiconductor adhesive layer A jig pressure-sensitive adhesive layer having a first surface and a second surface distal to the semiconductor adhesive layer, and at least a second surface side of the jig pressure-sensitive adhesive layer. For semiconductor processing, comprising at least a release film having a first surface on the side proximal to the jig adhesive layer and a second surface on the side distal to the jig adhesive layer A sheet,
The arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm,
The release film comprises a release agent layer on each of the first surface side and the second surface side of the release film,
The second surface of the adhesive layer for jigs and the second surface of the adhesive layer for jigs after the second surface of the adhesive layer for jigs and the first surface of the release film are attached and stored at 40 ° C. for 3 days A semiconductor processing sheet, wherein the peeling force β at the interface with the first surface of the release film is 10 to 1000 mN / 50 mm.

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