JP2017152518A - Semiconductor device, placing table and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of positioning easily even when a small semiconductor element is employed, and capable of improving the tolerance of a bonding material when a large semiconductor element is employed, and to provide a placing table and a method of manufacturing a semiconductor device.SOLUTION: A semiconductor device includes a protrusion body 20 having a plurality of protrusions 22 protruding upward, and an inner peripheral recess 26 provided on the inner peripheral side of the protrusions 22, a bonding material provided on the protrusion body 20, a semiconductor element provided on the bonding material, and a mold resin covering the semiconductor element. At least a part of the outer peripheral surface of the protrusion 22 has a taper 22a directing toward the inner peripheral side as it directs upward. The inner peripheral recess 26 is formed when a plurality of protrusions 22 surround.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device, a mounting table, and a method for manufacturing a semiconductor device.

  Conventionally, a semiconductor device having a die pad, a bonding agent such as solder provided on the die pad, a semiconductor element provided on the bonding agent, and a mold resin covering the semiconductor element is known (for example, Patent Documents). 1). According to the aspect disclosed in Patent Document 1, it is possible to prevent the bonding agent from leaking out of the groove. However, when the die pad has a tapered shape as shown in FIG. 1 of Patent Document 1, it is difficult to position the semiconductor element at the center when a small-sized semiconductor element is employed. Therefore, in the first place, in Patent Document 1, it is considered that a semiconductor element having a certain size or more is adopted.

JP 2009-147094 A

  The present invention provides a semiconductor device, a mounting table, and a method for manufacturing a semiconductor device that can be easily positioned even when a small semiconductor element is employed, and can increase the tolerance of a bonding agent when a large semiconductor element is employed. provide.

A semiconductor device according to the present invention includes:
A mounting table including a projecting body having a plurality of projecting portions projecting upward, and an inner circumferential concave portion provided on the inner circumferential side of the projecting portion;
A bonding agent provided on the protruding body;
A semiconductor element provided on the bonding agent;
A mold resin covering the semiconductor element;
With
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The inner circumferential recess is formed by surrounding the plurality of protrusions.

In the semiconductor device according to the present invention,
A groove may be formed between at least two protrusions.

In the semiconductor device according to the present invention,
The groove portion may have a portion that becomes wider as it goes upward.

In the semiconductor device according to the present invention,
Each protrusion has a triangular pyramid shape or a quadrangular pyramid shape,
One side of one protrusion may overlap with one side of another protrusion.

In the semiconductor device according to the present invention,
The mounting table may include an outer peripheral concave portion provided on the outer peripheral side of the protruding portion and a pedestal portion provided on the outer peripheral side of the outer peripheral concave portion.

In the semiconductor device according to the present invention,
The height position of the pedestal part and the height position of the protruding part may be the same.

In the semiconductor device according to the present invention,
The mounting table has an outer peripheral recess provided on the outer peripheral side of the protruding portion,
The height position of the lower end of the outer peripheral recess and the height position of the lower end of the inner peripheral recess may be the same.

The mounting table according to the present invention is:
A mounting table on which a semiconductor element is mounted via a bonding agent,
A projecting body having a plurality of projecting portions projecting upward and an inner circumferential recess provided on the inner circumferential side of the projecting portion;
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The inner circumferential recess is formed by surrounding the plurality of protrusions.

A method for manufacturing a semiconductor device according to the present invention includes:
Of the mounting table including a protruding body having a plurality of protruding portions protruding upward and an inner peripheral concave portion provided on the inner peripheral side of the protruding portion, a step of mounting a bonding agent in the inner peripheral concave portion; ,
A step of dissolving the bonding agent by applying heat;
Placing the semiconductor element on the molten bonding agent;
Covering the semiconductor element with a mold resin;
With
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The inner circumferential recess is formed by surrounding the plurality of protrusions.

  According to the present invention, the inner peripheral recess is provided on the inner peripheral side of the protrusion. For this reason, when melt | dissolving joining agents, such as solder, the joining agent melt | dissolved in an inner peripheral recessed part tends to remain. As a result, even if a small semiconductor element is employed, the semiconductor element can be automatically positioned at the approximate center position of the inner peripheral recess.

  In general, when the size of the semiconductor element is large (more precisely, when the size in the planar direction is large), it is required to increase the tolerance of the bonding agent in an environmental test such as a temperature cycle test. In this respect, the tolerance can be stabilized by increasing the thickness of the bonding agent. According to the present invention, since at least a part of the outer peripheral surface of the projecting portion has a tapered portion that goes to the inner peripheral side as it goes upward, when a large semiconductor element is employed, the peripheral portion of the semiconductor element It is possible to increase the thickness of the bonding agent below the thickness of the adhesive. As a result, the tolerance of the bonding agent can be increased.

FIG. 1 is a perspective view of a mounting table according to an embodiment of the present invention. FIG. 2 is an upper plan view of the mounting table according to the embodiment of the present invention. FIG. 3 is a cross-sectional view of the semiconductor device according to the embodiment of the present invention. FIG. 4 is a cross-sectional view of a semiconductor device according to Modification 1 of the embodiment of the present invention. FIG. 5 is a cross-sectional view of a semiconductor device according to Modification 2 of the embodiment of the present invention. FIG. 6 is a cross-sectional view of a semiconductor device according to Modification 3 of the embodiment of the present invention. FIG. 7 is a cross-sectional view of a semiconductor device according to Modification 4 of the embodiment of the present invention.

Embodiment << Configuration >>
As shown in FIG. 1, the semiconductor device according to the present embodiment includes a protrusion 20 having a plurality of protrusions 22 protruding upward and an inner peripheral recess 26 provided on the inner peripheral side of the protrusion 22. The mounting table 10, a bonding agent 50 such as solder (see FIGS. 3 to 7) provided on the protrusion 20, semiconductor elements 91 and 92 provided on the bonding agent 50, and the semiconductor elements 91 and 92 are covered. Mold resin 60. As shown in FIGS. 3 to 7, the protrusion 22 and the semiconductor elements 91 and 92 may not be in contact with each other, and the semiconductor elements 91 and 92 may be supported by the protrusion 22 via the bonding agent 50. The semiconductor elements 91 and 92 may be contacted and supported by the protrusion 22.

  At least a part of the outer peripheral surface of the protruding portion 22 has a tapered portion 22a that goes to the inner peripheral side as it goes upward. Moreover, the inner peripheral recessed part 26 is formed by the several protrusion part 22 surrounding. As an example, the bonding agent 50 such as solder is placed in the inner circumferential recess 26, and the bonding agent 50 is melted by increasing the temperature, and melted outward from the inner circumferential recess 26. May flow out.

  As shown in FIG. 1, a groove 21 may be formed between at least two protrusions 22. In the aspect shown in FIG. 1, four protrusions 22 are provided, and a groove 21 is provided between a pair of adjacent protrusions 22.

  The groove part 21 may have a part which becomes wide as it goes upwards. In the aspect shown in FIG. 1, each protrusion 22 has a triangular pyramid shape, so that the width of the groove 21 becomes wider as it goes upward. In the embodiment shown in FIG. 1, each protrusion 22 has a triangular pyramid shape. However, the present invention is not limited to this, and each protrusion 22 has another polygonal pyramid shape (for example, a quadrangular pyramid shape, a pentagonal pyramid shape, etc.). It may be.

  Also, as shown in FIG. 1, one side of one protrusion 22 may overlap with one side of another protrusion 22. In the embodiment shown in FIG. 2 (as shown in the upper plan view of FIG. 1), the lower side of each protrusion 22 overlaps the lower side of the adjacent protrusion 22. More specifically, two lower sides of the protrusions 22 having a triangular pyramid shape overlap with the lower sides of the adjacent protrusions 22.

  The mounting table 10 may include an outer peripheral recess 30 provided on the outer peripheral side of the protrusion 22 and a pedestal 40 provided on the outer peripheral side of the outer peripheral recess 30. In the embodiment shown in FIG. 2, the outer peripheral recess 30 has a “B” shape, and the outer periphery of the outer peripheral recess 30 has a square shape.

  As shown in FIG. 3, the height position of the pedestal portion 40 and the height position of the protruding portion 22 may be the same. In the present embodiment, “height position” is “same” does not mean that it is completely the same, as long as it is within a range of ± 10% of the total height. Good. Moreover, the height position of the lower end of the outer periphery recessed part 30 and the height position of the lower end of the inner periphery recessed part 26 may be the same.

  In this embodiment, as shown in FIGS. 3 to 7, both the large semiconductor element 91 and the small semiconductor element 92 may be used without being selected. In the present embodiment, the small semiconductor element 92 (refer to the solid line in FIGS. 3 to 7) means a semiconductor element that is less than 120% of the area of the inner circumferential recess 26 when viewed from above. The large semiconductor element 91 (see the broken lines in FIGS. 3 to 7) means a semiconductor element having a size of 120% or more of the area of the inner circumferential recess 26 when viewed from above.

《Action ・ Effect》
Next, operations and effects of the present embodiment having the above-described configuration, which have not been described yet, will be described.

  According to the present embodiment, as shown in FIG. 1, the inner peripheral recess 26 is provided on the inner peripheral side of the protrusion 22. For this reason, when the bonding agent 50 such as solder is melted, the molten bonding agent 50 tends to stay in the inner circumferential recess 26. For this reason, the semiconductor elements 91 and 92 can be automatically positioned at substantially the center position of the inner peripheral recess 26. This effect is greater when the small semiconductor element 92 is used than when the large semiconductor element 91 is used.

  In general, when the size of the semiconductor elements 91 and 92 is large (more precisely when the size in the plane direction is large), it is required to increase the tolerance of the bonding agent 50 in an environmental test such as a temperature cycle test. Is done. In this respect, by increasing the thickness of the bonding agent 50, the withstand amount can be stabilized. According to the present embodiment, since at least a part of the outer peripheral surface of the projecting portion 22 has the tapered portion 22a that goes to the inner peripheral side as it goes upward, the bonding is performed below the peripheral portion of the semiconductor elements 91 and 92. The thickness of the agent 50 can be increased. As a result, the tolerance of the bonding agent 50 can be increased. This effect is greater when the large semiconductor element 91 is used than when the small semiconductor element 92 is used. In addition, since the cracks to the bonding agent 50 such as solder often occur from the vicinity of the peripheral portion of the bonding agent 50, the thickness of the bonding agent 50 at the peripheral portion is increased from the viewpoint of preventing such cracks and the like. Is beneficial.

  As shown in FIG. 1, when an embodiment in which the groove portion 21 is formed between at least two protrusions 22 is adopted, the bonding agent 50 in the inner peripheral recess portion 26 is placed outside the inner peripheral recess portion 26. Can be supplied via. For this reason, it is possible to easily increase the thickness of the bonding agent 50 below the peripheral portions of the semiconductor elements 91 and 92.

  When the groove portion 21 has a portion that increases in width as it goes upward, it is advantageous in that the thickness of the bonding agent 50 below the peripheral edge portion of the large semiconductor element 91 can be increased as much as possible. In particular, when each protrusion 22 has a polygonal pyramid shape such as a triangular pyramid shape or a quadrangular pyramid shape, the portion in contact with the large semiconductor element 91 becomes a point, and the thickness of the bonding agent 50 is continuously thick. Therefore, the thickness of the bonding agent 50 below the peripheral edge portions of the semiconductor elements 91 and 92 can be increased. Moreover, the load applied to the bonding agent 50 can be continuously changed, and the withstand amount of the bonding agent 50 can be increased.

  As shown in FIG. 2, when adopting a mode in which one side of one protruding portion 22 overlaps with one side of another protruding portion 22, the width at the lower end of the groove portion 21 can be reduced. The speed of the melted bonding agent 50 that passes through can be suppressed (if the speed is high, the positions of the semiconductor elements 91 and 92 may be shifted). For this reason, the semiconductor elements 91 and 92 can be automatically positioned at a substantially central position of the inner circumferential recess 26 more reliably.

  As shown in FIG. 2, each protrusion 22 has a triangular pyramid shape. When viewed from above, two sides of each protrusion 22 overlap, and the four apexes on the inner peripheral recess 26 side of each protrusion 22 are inward. In the case of adopting an overlapping mode at the approximate center of the circumferential recess 26, it is possible to support the semiconductor elements 91 and 92 at the four vertices of the protrusion 22 directly or indirectly through the bonding agent 50 in a balanced manner. it can. Further, according to such an aspect, since the bonding agent 50 melted from the inner peripheral recess 26 to the outer periphery can be made to flow evenly from the four groove portions 21, the semiconductor elements 91 and 92 can be more reliably connected to the inner periphery. It can be automatically positioned at a substantially central position of the recess 26.

  Furthermore, as shown in FIG. 2, when each protrusion 22 is a right-angled isosceles triangle when viewed from above, the base angle is 45 degrees and the apex angle is 90 degrees, 2 of each protrusion 22 When the side is overlapped and the four vertices on the inner peripheral recess 26 side of each protrusion 22 are overlapped at the approximate center of the inner peripheral recess 26, each protrusion 22 can be perfectly aligned. , The shape of the inner circumferential recess 26 is point-symmetric with respect to its center, and four straight lines passing through the center (up and down direction, left and right direction in FIG. 2, tilted at 45 degrees right and tilted at 45 degrees left) Line symmetric). For this reason, since the bonding agent 50 melted from the inner peripheral recess 26 to the outer periphery can be more evenly flowed from the four grooves 21, the semiconductor elements 91 and 92 are more reliably positioned at the substantially central position of the inner peripheral recess 26. Can be automatically positioned.

  Further, when the shape formed by the outer edge of each protrusion 22 and the shape formed by the outer edge of the outer peripheral recess 30 are similar when viewed from above, the melt accumulated in the outer peripheral recess 30 is melted. This is advantageous in that the depth of the bonding agent 50 and the speed of the molten bonding agent 50 flowing out to the outer peripheral recess 30 can be made more uniform. In the aspect shown in FIG. 2, the shape formed by the outer edge of each projecting portion 22 is a square shape, and the shape formed by the outer edge of the outer peripheral recess 30 is also a square shape. This is advantageous in that the depth of the melted bonding agent 50 accumulated in the outer circumferential recess 30 and the speed of the melted bonding agent 50 flowing out to the outer circumferential recess 30 can be made more uniform.

  As shown in FIG. 2, when the protrusion 20 has an outer peripheral recessed portion 30 provided on the outer peripheral side of the protruding portion 22 and a pedestal portion 40 provided on the outer peripheral side of the outer peripheral recessed portion 30. Can store the bonding agent 50 in the outer circumferential recess 30. For this reason, it is possible to prevent the melted bonding agent 50 from flowing out of the protrusion 20.

  As shown in FIG. 3, when the height position of the lower end of the outer peripheral recessed portion 30 and the height position of the lower end of the inner peripheral recessed portion 26 are the same, the speed of the melted bonding agent 50 passing through the groove portion 21. Can be suppressed. For this reason, the semiconductor elements 91 and 92 can be automatically positioned at a substantially central position of the inner circumferential recess 26 more reliably.

  In addition, as shown in FIG. 4, the height position of the lower end of the outer periphery recessed part 30 may be higher than the height position of the lower end of the inner periphery recessed part 26. FIG. When such an aspect is employ | adopted, the speed | rate of the melt | dissolved bonding agent 50 which passes the groove part 21 can be suppressed more. For this reason, the semiconductor elements 91 and 92 can be automatically positioned at a substantially central position of the inner peripheral recess 26 more reliably.

  Further, as shown in FIG. 5, when the aspect in which the height position of the lower end of the inner peripheral recess 26 is higher than the height position of the lower end of the outer peripheral recess 30 is adopted, the peripheral portion of the large semiconductor element 91 The thickness of the bonding agent 50 can be increased compared to the central portion. As a result, it is advantageous in that cracks and the like can be more reliably prevented from entering the bonding agent 50 such as solder. In addition, the height position of the lower end of the inner peripheral recessed part 26 and the height position of the lower end of the outer peripheral recessed part 30 may be continuously deepened from the center part toward the outer periphery. According to such an aspect, since the thickness of the bonding agent 50 such as solder can be increased toward the outer peripheral side, cracks and the like can be more reliably prevented from entering the bonding agent 50 such as solder. It is beneficial in terms.

  As shown in FIGS. 3 to 5, when the aspect in which the height position of the pedestal portion 40 and the height position of the protruding portion 22 are the same is adopted, the pedestal portion 40 and the protruding portion 22 are the same. Since it can create in the process or the same process, it is advantageous at the point which can mount the mounting base 10 easily. In addition, it is not restricted to such an aspect, As shown in FIG. 6, the height position of the protrusion part 22 may be lower than the height position of the base part 40, and as shown in FIG. The height position of the protruding portion 22 may be lower than the height position of the pedestal portion 40. As shown in FIG. 6, when the height position of the protruding portion 22 is lower than the height position of the pedestal portion 40, the bonding agent 50 in the vicinity of the protruding portion 22 and the peripheral edge portion of the semiconductor elements 91 and 92. The difference in thickness can be reduced. On the other hand, as shown in FIG. 7, when the height position of the protrusion 22 is lower than the height position of the pedestal 40, the bonding agent in the vicinity of the protrusion 22 and the peripheral edge of the semiconductor elements 91 and 92. The difference in thickness of 50 can be increased. In this way, the design can be appropriately changed according to the situation.

  Lastly, the description of the above-described embodiment, the description of the modified examples, and the disclosure of the drawings are only examples for explaining the invention described in the claims, and the description of the above-described embodiment. The invention described in the scope of claims is not limited by the disclosure of the drawings.

DESCRIPTION OF SYMBOLS 10 Mounting base 20 Protruding body 21 Groove part 22 Protruding part 22a Taper part 26 Inner peripheral recessed part 30 Outer peripheral recessed part 40 Base part 50 Bonding agent 60 Mold resin 91 Large semiconductor element 92 Small semiconductor element

Claims (9)

A mounting table including a projecting body having a plurality of projecting portions projecting upward, and an inner circumferential concave portion provided on the inner circumferential side of the projecting portion;
A bonding agent provided on the protruding body;
A semiconductor element provided on the bonding agent;
A mold resin covering the semiconductor element;
With
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The semiconductor device is characterized in that the inner circumferential recess is formed by surrounding the plurality of protrusions.   The semiconductor device according to claim 1, wherein a groove is formed between at least two protrusions.   The semiconductor device according to claim 2, wherein the groove portion has a portion whose width increases toward the top. Each protrusion has a triangular pyramid shape or a quadrangular pyramid shape,
4. The semiconductor device according to claim 1, wherein one side of a certain protruding portion overlaps with one side of another protruding portion.   The mounting table according to any one of claims 1 to 4, wherein the mounting table includes an outer peripheral recess provided on an outer peripheral side of the projecting portion and a pedestal provided on an outer peripheral side of the outer peripheral recess. 2. The semiconductor device according to claim 1.   The semiconductor device according to claim 5, wherein a height position of the pedestal portion and a height position of the protruding portion are the same. The mounting table has an outer peripheral recess provided on the outer peripheral side of the protruding portion,
7. The semiconductor device according to claim 1, wherein a height position of a lower end of the outer peripheral recess and a height position of a lower end of the inner peripheral recess are the same. In the mounting table on which the semiconductor element is mounted via the bonding agent,
A projecting body having a plurality of projecting portions projecting upward and an inner circumferential recess provided on the inner circumferential side of the projecting portion;
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The mounting table is characterized in that the inner peripheral recess is formed by surrounding the plurality of protrusions. Of the mounting table including a protruding body having a plurality of protruding portions protruding upward and an inner peripheral concave portion provided on the inner peripheral side of the protruding portion, a step of mounting a bonding agent in the inner peripheral concave portion; ,
A step of dissolving the bonding agent by applying heat;
Placing the semiconductor element on the molten bonding agent;
Covering the semiconductor element with a mold resin;
With
At least a part of the outer peripheral surface of the protruding portion has a tapered portion that goes to the inner peripheral side as it goes upward,
The method of manufacturing a semiconductor device, wherein the inner peripheral recess is formed by surrounding the plurality of protrusions.