JP2017141503A - Apparatus and method for feeding plating solution to plating tank, plating system, powder container, and plating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an improved apparatus for adding a copper oxide powder that has a possibility of contaminating the interior of a clean room to a plating solution and feeding said plating solution into a plating tank.SOLUTION: The apparatus 20 for feeding a plating solution having copper oxide powder dissolved therein into a plating tank 2 is an apparatus 20 including: a hopper 27 having a charging port connectable to a powder introducing conduit of a powder container 21 having a powder contained therein; a feeder 30 communicating with the lower opening of the hopper 27; a motor 31 connected to the feeder 30; and a plating solution tank 35 connected to the outlet of the feeder 30 and for dissolving the powder into the plating solution.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an apparatus and a method for supplying a plating solution to a plating tank. Moreover, this invention relates to the plating system provided with such an apparatus. Furthermore, this invention relates to the powder container for accommodating the metal powder used for plating. Furthermore, the present invention relates to a method for plating a substrate using a plating solution to which metal powder used for plating is added.

  With the progress of miniaturization, high speed, and low power consumption of electronic equipment, the miniaturization of the wiring pattern in the semiconductor device is progressing. With the miniaturization of this wiring pattern, the materials used for wiring are There has been a shift from conventional aluminum and aluminum alloys to copper and copper alloys. The resistivity of copper is 1.37 μΩcm, which is about 37% lower than aluminum (2.65 μΩcm). For this reason, the copper wiring can not only reduce power consumption compared to the aluminum wiring, but also can be miniaturized with an equivalent wiring resistance. Further, the copper wiring can suppress signal delay by reducing resistance.

  In general, the copper is embedded in the trench by electrolytic plating that can form a film at a higher speed than PVD, CVD, or the like. In this electrolytic plating, a voltage is applied between the substrate and the anode in the presence of a plating solution to deposit a copper film on a seed layer (feeding layer) having a low resistance formed in advance on the substrate. The seed layer is generally made of a copper thin film (copper seed layer) formed by PVD or the like, but with the miniaturization of wiring, a thinner seed layer is required. For this reason, the film thickness of the seed layer, which was generally about 50 nm, is expected to be 10-20 nm or less in the future.

  The applicant has proposed a plating apparatus in which a plurality of divided anodes are used as anodes, and a plating power source is individually connected to each divided anode (see Patent Document 1). According to this plating apparatus, the current density of the split anode located at the center side is increased from the outer peripheral side for a certain period of time to form the initial plating film on the substrate, and the plating current is prevented from concentrating on the outer peripheral portion of the substrate. By allowing the plating current to flow also to the center side of the substrate, it is possible to form a plating film having a uniform thickness even when the sheet resistance is high. Furthermore, the applicant has proposed a plating technique using an insoluble anode as the anode (see Patent Documents 2 and 3). The anode holder for holding the insoluble anode is provided with a plating solution discharge unit for sucking and discharging the plating solution in the anode chamber, and a plating solution injection unit connected to a plating solution supply pipe extending from the plating solution supply device. Is provided.

  Furthermore, recently, in order to meet the demand for miniaturization of circuit systems using semiconductors, semiconductor circuits have been mounted in packages close to the chip size. As a method for realizing such mounting on a package, a package method called a wafer level package (WLP or WL-CSP) has been proposed. In general, the wafer level package includes a fan-in technology (also referred to as WLCSP (Wafer Level Chip Scale Package)) and a fan-out technology. Fan-in WLP is a technique for providing external electrodes (external terminals) in an area equivalent to the chip size. On the other hand, in fan-out WLP (FPWLP, Fan Out Wafer-Level-Packaging), for example, rewiring and external electrodes are formed on a substrate formed of insulating resin in which a plurality of chips are embedded. This is a technique for providing an external terminal in an area larger than the size. In such rewiring on the wafer, formation of an insulating layer, and the like, an electrolytic plating technique may be used, and it is assumed that the electrolytic plating technique is also applied to the fan-out WLP. In order to apply the electrolytic plating technique to the fan-out WLP technique or the like that has a high demand for miniaturization, a more advanced technique is required in terms of management of the plating solution.

  In order to perform so-called bottom-up plating, the applicant has proposed a method of plating a substrate such as a wafer while preventing generation of an electrolyte component that inhibits bottom-up plating (see Patent Document 4). In this method, an insoluble anode and a substrate are brought into contact with a copper sulfate plating solution containing an additive, and a predetermined plating voltage is applied between the substrate and the insoluble anode by a plating power source to plate the substrate.

  On the other hand, as described above, in a plating apparatus using an insoluble anode, replenishment of the target metal ion is performed by introducing a powdered metal salt into a circulation tank or by dissolving a metal piece in a separate tank. It is assumed that the method of replenishing is used. Here, if the powdered metal salt is replenished in the plating solution, fine particles increase in the plating solution, and there is a concern that the increased fine particles may cause defects on the surface of the substrate after the plating treatment. Therefore, the applicant has proposed a technique for keeping the concentration of each component of the plating solution constant over a long period of time in a plating apparatus using an insoluble anode (Patent Document 5). According to this technique, the amount of the plating solution used can be minimized as much as possible by circulating and reusing the plating solution. Moreover, by using an insoluble anode, it is not necessary to replace the anode, and the maintenance and management of the anode can be facilitated. Furthermore, the concentration of the plating solution component that changes as the plating solution is circulated and reused is fixed by replenishing the plating solution with a replenisher solution that contains the components contained in the plating solution at a higher concentration than the plating solution. Can be kept within range.

JP 2002-129383 A JP 2005-213610 A JP 2008-150631 A JP 2006-074975 A JP 2007-051362 A

  When the substrate is plated with copper using an insoluble anode, the copper ions in the plating solution are reduced. Therefore, it is necessary for the plating solution supply apparatus to adjust the concentration of copper ions in the plating solution. One method for replenishing the plating solution with copper is to add copper oxide powder to the plating solution. However, when the powder is scattered in the semiconductor manufacturing factory, it causes contamination in the clean room. Furthermore, the plating solution supply apparatus is required to add a necessary amount of copper oxide to the plating solution without reducing the throughput. In addition, there is an increasing demand for a plating technique for forming a higher quality copper film on a substrate using a plating solution to which such copper oxide is added.

  An object of the present invention is to provide an improved apparatus and method for adding a powder containing at least a metal such as copper to a plating solution and supplying the plating solution to a plating tank. Moreover, this invention aims at providing the plating system provided with such an apparatus. A further object of the present invention is to provide a powder container for storing a powder containing at least a metal such as copper, which is used in the above apparatus. Furthermore, an object of the present invention is to provide a plating method capable of forming a higher quality metal film on a substrate using a plating solution to which a powder containing at least a metal such as copper is added.

  According to an aspect of the present invention, there is provided an apparatus for supplying a plating solution in which a powder containing at least a metal used for plating is dissolved to a plating tank, the powder in a powder container containing the powder A hopper having an input port connectable to a body conduit, a feeder communicating with a lower opening of the hopper, a motor connected to the feeder, and an outlet of the feeder, and the powder is dissolved in the plating solution And a plating solution tank to be provided.

In one embodiment, the apparatus further includes a weight measuring device that measures the weight of the hopper and the feeder, and an operation control unit that controls the operation of the motor based on a change in the measured value of the weight.
In one embodiment, the operation control unit calculates an addition amount of the powder to the plating solution from a change in the measured value of the weight, and operates the motor until the addition amount reaches a target value.
In one embodiment, the inlet of the hopper has a connection seal that gradually decreases in diameter as the distance from the tip increases.
In one embodiment, the connection seal is made of an elastic material.

In one embodiment, the apparatus further comprises a sealed chamber in which an inlet of the hopper is disposed, and the sealed chamber includes a door that allows the powder container to be loaded therein, and a part of a wall of the sealed chamber. And comprising gloves.
In one embodiment, the sealed chamber includes an exhaust port for communicating the internal space with a negative pressure source.
In one embodiment, a vibration device that vibrates the powder container is disposed in the sealed chamber.
In one embodiment, a vacuum clamp for holding the powder container is disposed in the sealed chamber.

In one embodiment, the plating solution tank includes a stirrer that stirs the plating solution.
In one embodiment, the plating solution tank includes a stirring tank in which the stirrer is disposed and an overflow tank connected to a communication hole provided in a lower part of the stirring tank.
In one embodiment, the plating solution tank further includes a bypass channel adjacent to the overflow tank.
In one embodiment, the plating solution tank further includes a plurality of baffle plates disposed in the overflow tank, and the plurality of baffle plates are arranged alternately.
In one embodiment, an envelope cover that surrounds a connection portion between the feeder and the plating solution tank, and an inert gas supply line that communicates with the interior of the envelope cover.

According to one aspect of the present invention, a plating system comprising: a plurality of plating tanks for plating a substrate; the apparatus; and a plating solution supply pipe extending from the apparatus to the plurality of plating tanks. Is provided.
In one embodiment, a plating solution return pipe extending from the plurality of plating tanks to the apparatus is further provided.

According to an aspect of the present invention, there is provided a method of supplying a powder containing at least a metal used for plating to a plating solution, wherein a powder conduit of a powder container containing the powder is connected to a hopper inlet. The powder is supplied to the hopper from the powder container, and the feeder is operated while measuring the weight of the hopper storing the powder and the feeder communicating with the lower opening of the hopper. A method is provided in which the powder is added to the plating solution by the feeder based on the change in the measured value of the weight.
In one embodiment, the method further includes the step of stirring the plating solution to which the powder is added.
In one embodiment, the method further includes a step of calculating an addition amount of the powder to the plating solution from a change in the measured value of the weight and operating the feeder until the addition amount reaches a target value.

According to one aspect of the present invention, a powder container for containing a powder containing at least a metal used for plating, the container main body capable of containing the powder therein, and the container main body There is provided a powder container comprising: a powder conduit connected to the valve; and a valve attached to the powder conduit.
In one embodiment, the tip of the powder conduit has a truncated cone shape.

According to one aspect of the present invention, the step of transferring the plating solution from the plating tank to the plating solution tank;
Based on the concentration of metal ions in the plating solution in the plating tank, calculating the amount to be added to the plating solution stored in the plating solution tank, the powder containing at least the metal used for plating, and Supplying a powder containing at least a metal used for plating to a plating solution contained in the plating solution tank; dissolving the powder in a plating solution contained in the plating solution tank; Supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank; bringing the substrate into contact with the plating solution contained in the plating tank; and And a step of causing an electrochemical reaction in a plating solution accommodated in the plating tank so that a metal is deposited.

In one embodiment, the plating tank is composed of a plurality of plating tanks, and the plurality of platings are controlled while controlling the flow rate of the plating liquid when supplying the plating liquids stored in the plating liquid tanks to the plurality of plating tanks. The plating solution is supplied to each tank.
In one embodiment, the plating tank is composed of a plurality of plating tanks, constantly monitoring the metal ions in the plating solution in the plurality of plating tanks, and when the concentration of the metal ions is lower than a predetermined value. The plating solution in the plurality of plating tanks is transferred from the plating tank to the plating solution tank, and the plating solution is supplied from the plating solution tank to any of the plurality of plating tanks.

  According to one aspect of the present invention, in a non-transitory computer-readable storage medium storing a computer program for executing a method for electroplating a substrate, the method for electroplating the substrate includes plating a plating solution. A step of transferring from the tank to the plating solution tank, a step of supplying a powder containing at least a metal used for plating to the plating solution stored in the plating solution tank, and a storing of the powder in the plating solution tank A step of dissolving in the plating solution, a step of supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating bath, and a step of bringing the substrate into contact with the plating solution contained in the plating bath And causing an electrochemical reaction in the plating solution accommodated in the plating tank so that the metal is deposited on the substrate surface in the plating solution. Storage medium is provided, characterized in that it has a degree, the.

  According to one aspect of the present invention, in a non-transitory computer-readable storage medium storing a computer program for executing a method for electroplating a substrate, the method for electroplating the substrate comprises: A step of monitoring whether or not the concentration of metal ions contained in the plating solution is lower than a set value, and if the concentration of metal ions is lower than a predetermined value, at least a powder containing metal is added to the plating solution A step of calculating an amount to be processed, a step of transferring a plating solution from the plating tank to the plating solution tank, and supplying the powder to the plating solution accommodated in the plating solution tank until the calculated amount is reached. A step of dissolving the powder in a plating solution contained in the plating solution tank, and the plating solution in which the powder is dissolved from the plating solution tank. Supplying the plating bath, contacting the substrate with the plating solution contained in the plating bath, and plating contained in the plating bath so that the metal is deposited on the substrate surface in the plating solution. And a step of causing an electrochemical reaction in a liquid.

ADVANTAGE OF THE INVENTION According to this invention, the apparatus and method which can add and dissolve powder to a plating solution can be provided, preventing powder scattering. Furthermore, according to the present invention, a higher quality metal film (for example, a copper film) can be formed on a substrate using a plating solution to which a powder containing at least a metal such as copper is added.
The powder container, the plating system, and the plating method described above can also be used when the metal species to be plated on the substrate is not copper but another metal such as indium, nickel, cobalt, or ruthenium. Examples of powders in this case include, for example, sulfates such as indium sulfate, nickel sulfate and cobalt sulfate, sulfamates such as nickel sulfamate and cobalt sulfamate, halogens such as nickel bromide, nickel chloride and cobalt chloride. And powders such as indium oxide.

It is a mimetic diagram showing the whole plating system concerning a 1st embodiment. It is a side view which shows the powder container which can hold | maintain copper oxide powder inside. It is a figure which shows the powder container in the state where the cap was removed and the valve was opened. It is a perspective view of a sealed chamber. It is a figure which shows the inside of a sealed chamber. It is a figure which shows the front-end | tip of the powder conduit | pipe of a powder container, and the inlet of a hopper. It is a figure which shows the state which the front-end | tip of the powder conduit | pipe of a powder container closely_contact | adhered to the inlet of a hopper. It is a flowchart which shows the supply process of the copper oxide powder from a powder container to a hopper. It is a side view which shows a hopper and a feeder. It is a perspective view of a plating solution tank. It is a top view of a plating solution tank. It is the longitudinal cross-sectional view of the plating solution tank seen from the direction shown by the arrow A of FIG. It is a schematic diagram which shows other embodiment of a plating solution tank. It is a schematic diagram which shows other embodiment of a plating solution tank. It is a figure which shows the experimental result which investigated the influence which the number of a baffle board has on the melt | dissolution of copper oxide powder. It is a schematic diagram which shows the whole plating system which concerns on 2nd Embodiment. In the plating system which concerns on 1st Embodiment, it is a flowchart which shows the control sequence which adds a copper oxide powder to a plating solution. It is a flowchart which shows the control sequence which adds the copper oxide powder to a plating solution in the plating system which concerns on 2nd Embodiment.

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the entire plating system according to the first embodiment. The plating system includes a plating apparatus 1 installed in a clean room and a plating solution supply apparatus 20 installed in a downstairs room. In the present embodiment, the plating apparatus 1 is an electrolytic plating unit for electrolytically plating copper on a substrate such as a wafer, and the plating solution supply apparatus 20 includes at least copper in the plating solution used in the plating apparatus 1. A plating solution supply unit for supplying powder. In the present embodiment, an example in which a copper oxide powder is used as a powder containing at least copper will be described, but a pellet-shaped molded product containing at least copper can be used. Moreover, the average particle diameter of the copper oxide powder in the present embodiment is in the range of 10 micrometers to 200 micrometers, and more preferably in the range of 15 micrometers to 50 micrometers. If the average particle size is too small, there is a risk of becoming dust and being easily scattered. On the other hand, if the average particle size is too large, the solubility in the solution when used as a plating solution may be deteriorated.
In this specification, “powder” and “powder” include solid particles, molded granules, pellets molded solids, and copper solid balls formed into small spheres. And at least a mixture of a solid copper-like ribbon-like or tape-like material, or a combination of any of these.

  The plating apparatus 1 has four plating tanks 2. Each plating tank 2 includes an inner tank 5 and an outer tank 6. An insoluble anode 8 held by an anode holder 9 is disposed in the inner tank 5. Furthermore, a neutral film (not shown) is disposed around the insoluble anode 8 in the plating tank 2. The inner tub 5 is filled with a plating solution, and the plating solution flows over the inner tub 5 and flows into the outer tub 6. The inner tank 5 is made of a rectangular plate-like member having a constant thickness of 3 mm to 5 mm, for example, a resin such as PVC, PP, or PTFE, or SUS or titanium covered with a fluorine resin. An agitated paddle (not shown) is provided. The stirring paddle reciprocates in parallel with the substrate W to stir the plating solution, whereby sufficient copper ions and additives can be uniformly supplied to the surface of the substrate W.

  The substrate W such as a wafer is held by the substrate holder 11 and immersed in the plating solution in the inner tank 5 of the plating tank 2 together with the substrate holder 11. Moreover, as the board | substrate W which is a to-be-plated target object, a semiconductor substrate, a printed wiring board, etc. can be used. Here, for example, when a semiconductor substrate is used as the substrate W, the semiconductor substrate is flat or substantially flat (in this specification, the substrate having a groove, a tube, a resist pattern, etc. is substantially flat. Is considered). In the case of plating on such a flat object, the plating conditions are changed over time while considering the in-plane uniformity of the plating film to be formed and preventing the film quality from being deteriorated. It is necessary to control it.

  The insoluble anode 8 is electrically connected to the positive electrode of the plating power source 15 via the anode holder 9, and the substrate W held by the substrate holder 11 is electrically connected to the negative electrode of the plating power source 15 via the substrate holder 11. Is done. When a voltage is applied between the insoluble anode 8 immersed in the plating solution and the substrate W by the plating power source 15, an electrochemical reaction occurs in the plating solution accommodated in the plating tank 2, and the substrate W Copper is deposited on the surface. In this way, the surface of the substrate W is plated with copper. The plating apparatus 1 may include fewer than four or more than four plating tanks 2.

  The plating apparatus 1 includes a plating control unit 17 that controls the plating process of the substrate W. The plating control unit 17 has a function of calculating the concentration of copper ions contained in the plating solution in the plating tank 2 from the accumulated value of the current flowing through the substrate W. As the substrate W is plated, the copper in the plating solution is consumed. The amount of copper consumed is proportional to the cumulative value of the current flowing through the substrate W. Therefore, the plating control unit 17 can calculate the copper ion concentration in the plating solution in each plating tank 2 from the accumulated value of the current.

  The plating solution supply apparatus 20 includes a sealed chamber 24 into which a powder container 21 containing copper oxide powder is carried, a hopper 27 that stores the copper oxide powder supplied from the powder container 21, and a lower part of the hopper 27. Feeder 30 communicating with the opening, motor 31 connected to the feeder 30, a plating solution tank 35 connected to the outlet of the feeder 30 for dissolving the copper oxide powder in the plating solution, and an operation for controlling the operation of the motor 31 A control unit 32 is provided. The feeder 30 is driven by a motor 31. In addition to sulfuric acid, copper sulfate, and halogen ions, the plating solution includes, as additives, a plating accelerator composed of SPS (bis (3-sulfopropyl) disulfide), an inhibitor composed of PEG (polyethylene glycol), and PEI. An acidic copper sulfate plating solution containing an organic additive of a leveler (smoothing agent) made of (polyethyleneimine) or the like is used. As the halogen ions, chloride ions are preferably used.

  The plating apparatus 1 and the plating solution supply apparatus 20 are connected by a plating solution supply pipe 36 and a plating solution return pipe 37. More specifically, the plating solution supply pipe 36 extends from the plating solution tank 35 to the bottom of the inner tank 5 of the plating tank 2. The plating solution supply pipe 36 is branched into four branch pipes 36 a, and the four branch pipes 36 a are respectively connected to the bottoms of the inner tanks 5 of the four plating tanks 2. Each of the four branch pipes 36 a is provided with a flow meter 38 and a flow rate adjustment valve 39, and the flow meter 38 and the flow rate adjustment valve 39 are connected to the plating control unit 17. The plating controller 17 is configured to control the opening degree of the flow control valve 39 based on the flow rate of the plating solution measured by the flow meter 38. Accordingly, the flow rate of the plating solution supplied to each plating tank 2 via the four branch pipes 36a is controlled by each flow rate adjusting valve 39 provided on the upstream side of each plating tank 2, and these flow rates are almost equal. To be the same. The plating solution return pipe 37 extends from the bottom of the outer tank 6 of the plating tank 2 to the plating solution tank 35. The plating solution return pipe 37 has four discharge pipes 37 a respectively connected to the bottoms of the outer tanks 6 of the four plating tanks 2.

  The plating solution supply pipe 36 is provided with a pump 40 for transferring the plating solution and a filter 41 arranged on the downstream side of the pump 40. The plating solution used in the plating apparatus 1 is sent to the plating solution supply device 20 through the plating solution return pipe 37, and the plating solution to which the copper oxide powder is added by the plating solution supply device 20 passes through the plating solution supply pipe 36. It is sent to the plating apparatus 1. The pump 40 may constantly circulate the plating solution between the plating device 1 and the plating solution supply device 20, or a predetermined amount of the plating solution is intermittently transferred from the plating device 1 to the plating solution supply device 20. The plating solution to which the copper oxide powder is fed may be intermittently returned from the plating solution supply device 20 to the plating device 1.

  Further, a pure water supply line 42 is connected to the plating solution tank 35 in order to replenish pure water (DIW) into the plating solution. The pure water supply line 42 includes an open / close valve 43 (usually opened) for stopping the supply of pure water when the plating apparatus 1 is stopped, and a flow meter for measuring the flow rate of pure water. 44, a flow rate adjusting valve 47 for adjusting the flow rate of pure water is disposed. The flow meter 44 and the flow rate adjustment valve 47 are connected to the plating control unit 17. When the copper ion concentration in the plating solution exceeds the set value, the plating control unit 17 controls the opening degree of the flow control valve 47 to dilute the plating solution, so that pure water is supplied to the plating solution tank 35. It is comprised so that it may supply.

  The plating control unit 17 is connected to the operation control unit 32 of the plating solution supply apparatus 20. When the copper ion concentration in the plating solution falls below the set value, the plating control unit 17 is configured to send a signal indicating the replenishment request value to the operation control unit 32 of the plating solution supply apparatus 20. In response to this signal, the plating solution supply apparatus 20 adds the copper oxide powder to the plating solution until the amount of addition of the copper oxide powder reaches the replenishment request value. In the present embodiment, the plating control unit 17 and the operation control unit 32 are configured as separate devices. However, in one embodiment, the plating control unit 17 and the operation control unit 32 may be configured as one control unit. Good. In this case, the control unit may be a computer that operates according to a program. This program may be stored in a storage medium.

  The plating apparatus 1 may include a concentration measuring device 18a that measures the copper ion concentration in the plating solution. The concentration measuring device 18 a is attached to each of the four discharge pipes 37 a of the plating solution return pipe 37. The measured value of the copper ion concentration obtained by the concentration measuring device 18 a is sent to the plating control unit 17. The plating control unit 17 may compare the copper ion concentration in the plating solution calculated from the accumulated current value with the set value, or compare the copper ion concentration measured by the concentration measuring device 18a with the set value. May be. The plating controller 17 calculates the copper ion concentration in the plating solution calculated from the accumulated current value (that is, the calculated value of the copper ion concentration) and the copper ion concentration measured by the concentration measuring instrument 18a (that is, the measured value of the copper ion concentration). ), The calculated value of the copper ion concentration may be calibrated. For example, the plating control unit 17 determines a correction coefficient by dividing the measured value of the copper ion concentration by the calculated value of the copper ion concentration, and multiplies the calculated value of the copper ion concentration by the calculated value of the copper ion, thereby obtaining the copper ion. The calculated concentration may be calibrated. The correction coefficient is preferably updated periodically.

  Further, a branch pipe 36b is provided in the plating solution supply pipe 36, and a concentration measuring device 18b is provided in the branch pipe 36b to monitor the copper ion concentration in the plating solution, or an analyzer (for example, CVS) is provided in the branch pipe 36b. An apparatus, a colorimeter, etc.) can be provided to quantitatively analyze and monitor the dissolved concentrations of various chemical components as well as copper ions. If comprised in this way, since the chemical component in the plating solution in the plating solution supply pipe 36, for example, the density | concentration of an impurity, can be analyzed before a plating solution is supplied to each plating tank 2, a dissolved impurity improves plating performance. Therefore, it is possible to prevent plating from being affected and to perform plating processing with higher accuracy more reliably. Only one of the concentration measuring devices 18a and 18b may be provided.

  With the configuration as described above, in the plating system according to the first embodiment, the copper plating solution is replenished while the copper ion concentration contained in the plating solution is substantially the same between the plating tanks 2. .

  FIG. 2 is a side view showing a powder container 21 that can hold copper oxide powder therein. As shown in FIG. 2, the powder container 21 is attached to the container main body 45 capable of accommodating copper oxide powder therein, the powder conduit 46 connected to the container main body 45, and the powder conduit 46. The valve 48 is provided. The container body 45 is made of a synthetic resin such as polyethylene. A handle 49 is formed on the container main body 45 so that an operator can carry the powder container 21 by holding the handle 49. Although the capacity | capacitance of the powder container 21 is not specifically limited, It is a capacity | capacitance which an operator can carry the powder container 21 with which the copper oxide powder was filled. In one example, the capacity of the powder container 21 is 4L. The copper oxide to be filled in the powder container 21 may be not only a copper oxide powder that is not molded but also a pellet (granular material) molded from the copper oxide powder. When using the copper oxide powder formed into pellets, dust scattering can be more effectively suppressed.

  The powder conduit 46 is joined to the container body 45 by joining means such as welding. The powder conduit 46 is composed of piping that allows the passage of copper oxide powder. The powder conduit 46 is inclined at an angle of about 30 degrees with respect to the vertical direction. When the valve 48 attached to the powder conduit 46 is opened, the copper oxide powder can pass through the powder conduit 46, and when the valve 48 is closed, the copper oxide powder can pass through the powder conduit 46. Can not. FIG. 2 shows a state in which the valve 48 is closed. A cap (that is, a lid) 50 is attached to the tip 46 a of the powder conduit 46.

  FIG. 3 is a view showing the powder container 21 with the cap 50 removed and the valve 48 opened. The copper oxide powder is introduced into the powder container 21 in the state shown in FIG. When the addition of the copper oxide powder is finished, the valve 48 is closed and the cap 50 is attached to the tip of the powder conduit 46 (see FIG. 2). The powder container 21 filled with the copper oxide powder is carried into the sealed chamber 24 shown in FIG. 1 with the valve 48 closed.

  FIG. 4 is a perspective view of the sealed chamber 24. In the present embodiment, the sealed chamber 24 is a rectangular box that can form a sealed space therein. The sealed chamber 24 includes a door 55 that allows the powder container 21 to be carried into the internal space thereof, and two gloves 56 that constitute a part of the wall of the sealed chamber 24. Moreover, the door 55 is configured by a member such as rubber having a sealing function so that the mounting frame to which the door 55 is attached is sealed so that the inside of the sealed chamber 24 is sealed. The glove 56 is made of a film made of a flexible material (for example, synthetic rubber such as vinyl chloride) that can be deformed along the shape of the hand of the worker so that the worker can work inside the sealed chamber 24. The main body of the glove 56 is configured to protrude into the sealed chamber 24. These two gloves 56 are arranged on both sides of the door 55. The sealed chamber 24 includes an exhaust port 58 for communicating the internal space with a negative pressure source. The negative pressure source is, for example, a vacuum pump. A negative pressure is formed in the sealed chamber 24 through the exhaust port 58.

  FIG. 5 is a view showing the inside of the sealed chamber 24. A vacuum clamp 61 that holds the powder container 21 by vacuum suction, a vibration device (vibrator) 65 that vibrates the powder container 21, and a pedestal 66 that supports the powder container 21 are disposed in the sealed chamber 24. Yes. The powder container 21 is installed on the vacuum clamp 61 and the pedestal 66 with the powder conduit 46 facing downward. The vacuum clamp 61 is fixed to the frame 68, and the vibration device 65 is fixed to the vacuum clamp 61. The vacuum clamp 61 has an anti-vibration rubber 61 a that contacts the powder container 21. The anti-vibration rubber 61a has a through hole (not shown) in which a vacuum is formed. The operations of the vibration device 65 and the vacuum clamp 61 are controlled by the operation control unit 32 shown in FIG.

  The vacuum clamp 61 is connected to an ejector 70 that is a vacuum generator. The ejector 70 and the vibration device 65 are connected to the compressed air supply pipe 72. The compressed air supply pipe 72 is branched into two, one connected to the ejector 70 and the other connected to the vibration device 65. When the compressed air is sent to the ejector 70, the ejector 70 forms a vacuum in the vacuum clamp 61, and the powder container 21 is held on the vibration-proof rubber 61a of the vacuum clamp 61 by vacuum suction. The vibration device 65 has a structure that is operated by compressed air. The vibration device 65 transmits vibration to the powder container 21 through the vacuum clamp 61 and vibrates the powder container 21 held by the vacuum clamp 61. The vibration frequency of the vibration device 65 is configured to be controlled by a vibration control unit (not shown) of the plating solution supply device 20. The vibration control unit may be configured by the operation control unit 32. The vibration device 65 may be in direct contact with the side surface of the powder container 21. In one embodiment, the vibration device 65 may be an electric vibration device.

  In the sealed chamber 24, an inlet 26 of a hopper 27 that can be connected to the powder container 21 is disposed. The tip 46a (see FIG. 3) of the powder conduit 46 of the powder container 21 is inserted into the charging port 26 of the hopper 27 (see FIG. 6 and FIG. 7), thereby the powder conduit 46 of the powder container 21. The tip 46 a is connected to the inlet 26 of the hopper 27. When the valve 48 is opened with the powder conduit 46 and the inlet 26 connected (see FIG. 7), the copper oxide powder in the powder container 21 passes through the powder conduit 46 to the inlet 26. It flows in and finally falls into the hopper 27.

  In the vicinity of the powder conduit 46 in the powder container 21, a bridge phenomenon of the copper oxide powder may occur. The bridging phenomenon is a phenomenon in which the powder density is increased and the powder container 21 is closed. In order to prevent such a bridging phenomenon, the vibration device 65 vibrates the powder container 21 and fluidizes the copper oxide powder in the powder container 21. The vibration range of the vibration device 65 is preferably 1000 to 10000 times per minute, and more preferably 7000 to 8000 times per minute.

  The powder conduit 46 is attached to the powder container 21 at a position where the powder container 21 is inclined as a whole when the powder conduit 46 is connected to the inlet 26 of the hopper 27. Specifically, when the powder conduit 46 is connected to the inlet 26 of the hopper 27, one side surface of the powder container 21 is inclined at an angle of 50 degrees to 70 degrees with respect to the horizontal plane, The side faces are inclined at an angle of 20 to 40 degrees with respect to the horizontal plane. Thus, when the powder conduit 46 is connected to the inlet 26 of the hopper 27, both side surfaces of the powder container 21 are inclined toward the powder conduit 46 at different angles on the left and right sides of the powder conduit 46. Therefore, the pressure of the powder concentrated near the powder conduit 46 differs between the left side and the right side of the powder conduit 46. Therefore, the occurrence of the bridging phenomenon can be effectively prevented, and as a result, the copper oxide powder is quickly discharged and the copper oxide powder hardly remains in the powder container 21.

  FIG. 6 is a view showing the tip 46 a of the powder conduit 46 of the powder container 21 and the inlet 26 of the hopper 27. The tip 46a of the powder conduit 46 has a truncated cone shape. The inlet 26 of the hopper 27 has a shape corresponding to the shape of the tip 46 a of the powder conduit 46. More specifically, the insertion port 26 of the hopper 27 has a connection seal 28 whose diameter gradually decreases as the distance from the tip (upper end) increases. The connection seal 28 is made of an elastic material such as rubber. As shown in FIG. 7, when the tip 46 a of the powder conduit 46 is inserted into the inlet 26 of the hopper 27, the tip 46 a of the powder conduit 46 comes into close contact with the connection seal 28 of the inlet 26, and the powder is sealed by the connection seal 28. The gap between the tip 46a of the conduit 46 and the inlet 26 of the hopper 27 is sealed. Therefore, scattering of the copper oxide powder is prevented.

  The operation of supplying the copper oxide powder from the powder container 21 to the hopper 27 will be described with reference to FIG. In step 1, a powder container 21 filled with copper oxide powder is prepared. In step 2, the door 55 of the sealed chamber 24 is opened, and in step 3, the powder container 21 is placed in the sealed chamber 24. In step 4, the door 55 is closed, and in step 5, the worker wears gloves 56 and removes the cap 50 of the powder container 21 in the sealed chamber 24. In step 6, the powder conduit 46 of the powder container 21 is connected to the inlet 26 of the hopper 27. In step 7, the valve 48 of the powder container 21 is opened. In step 8, the powder container 21 is connected to the vacuum clamp 61. The powder container 21 is vibrated by the vibration device 65 while being held. The copper oxide powder in the powder container 21 is supplied into the hopper 27 through the inlet 26. When the supply of the copper oxide powder is completed, the vibration of the powder container 21 is stopped in step 9, the valve 48 is closed in step 10, and the vacuum suction of the powder container 21 by the vacuum clamp 61 is stopped in step 11. In step 12, the powder container 21 is removed from the vacuum clamp 61 and the pedestal 66, and in step 13, the cap 50 is attached to the powder conduit 46. In step 14, the door 55 is opened, and in step 15, the powder container 21 is taken out from the sealed chamber 24.

  All the steps from Step 1 to Step 15 described above are performed in a state where a negative pressure is formed in the sealed chamber 24. The powder container 21 is in the sealed chamber 24 from when the valve 48 is opened until the valve 48 is closed. Therefore, even if the copper oxide powder spills from the powder container 21, the copper oxide powder does not leak from the sealed chamber 24. Since the capacity of the hopper 27 is several times the capacity of the powder container 21, steps 1 to 15 described above are repeated until a sufficient amount of copper oxide powder is stored in the hopper 27.

  Next, the hopper 27 and the feeder 30 will be described. FIG. 9 is a side view showing the hopper 27 and the feeder 30. The hopper 27 is a powder reservoir (or pellet reservoir) in which the copper oxide powder supplied from the powder container 21 is stored. The lower half of the hopper 27 has a truncated cone shape so that the copper oxide powder can easily flow downward. The upper end opening of the hopper 27 is covered with a lid 74. The inlet 26 to which the powder conduit 46 of the powder container 21 is connected is fixed to a lid 74. Further, an exhaust pipe 75 is fixed to the lid 74. The exhaust pipe 75 communicates with the internal space of the hopper 27 and further communicates with a negative pressure source (not shown). Therefore, a negative pressure is formed in the internal space of the hopper 27 through the exhaust pipe 75.

  The feeder 30 communicates with the lower opening of the hopper 27. In this embodiment, the feeder 30 is a screw feeder provided with a screw 30a. The motor 31 is connected to the feeder 30, and the feeder 30 is driven by the motor 31. The hopper 27 and the feeder 30 are fixed to a bracket 73, and the bracket 73 is supported by a weight measuring device 80. The weight measuring device 80 is configured to measure the total weight of the hopper 27, the feeder 30, the motor 31, and the copper oxide powder existing inside the hopper 27 and the feeder 30.

  The outlet 30 b of the feeder 30 is connected to the plating solution tank 35. When the motor 31 drives the feeder 30, the copper oxide powder in the hopper 27 is sent to the plating solution tank 35 by the feeder 30. An enveloping cover 81 that surrounds a connection portion between the feeder 30 and the plating solution tank 35 is fixed to the plating solution tank 35. The outlet 30 b of the feeder 30 is located in the surrounding cover 81. An inert gas supply line 83 is connected to the surrounding cover 81, and the inert gas supply line 83 communicates with the inside of the surrounding cover 81. The inert gas supply line 83 supplies an inert gas such as nitrogen gas into the surrounding cover 81 and fills the inside of the surrounding cover 81 with the inert gas.

  The reason why the inert gas is supplied into the surrounding cover 81 is as follows. The plating solution stored in the plating solution tank 35 may be operated so as to be maintained at a high temperature. In such a case, steam is generated from the plating solution. This vapor rises and reaches the connecting portion between the feeder 30 and the plating solution tank 35, and further enters the feeder 30 through the outlet 30 b of the feeder 30. When the vapor is adsorbed on the copper oxide powder in the feeder 30, the copper oxide powder may aggregate and block the feeder 30. Therefore, in such a case, an inert gas such as nitrogen gas is injected into the surrounding cover 81 to push down the steam and prevent the steam from entering the feeder 30.

  The weight measuring device 80 is connected to the operation control unit 32 that controls the operation of the motor 31, and the weight measurement value output from the weight measuring device 80 is transmitted to the operation control unit 32. . The operation control unit 32 receives a signal indicating the replenishment request value sent from the plating apparatus 1 (see FIG. 1), and from the change in the measured weight value output from the weight measuring device 80, the plating in the plating solution tank 35 is performed. The amount of copper oxide powder added to the liquid is calculated, and the motor 31 is operated until the amount of copper oxide powder added reaches the replenishment request value. The motor 31 drives the feeder 30, and the feeder 30 adds an amount of copper oxide powder corresponding to the replenishment request value to the plating solution tank 35. The replenishment request value is a value that can change according to the copper ion concentration of the plating solution so that the copper ion consumption in the plating solution contained in the plating tank 2 is reflected, and the plating solution contained in the plating solution tank 35. It represents the target value of the amount of copper oxide powder to be added to the liquid.

  When the copper ion concentration in the plating solution in the plating tank 2 falls below the set value, the plating control unit 17 is configured to calculate the replenishment request value from the copper ion concentration in the plating solution in the plating tank 2. ing. As described above, the copper ion concentration in the plating solution in the plating tank 2 is measured by the copper ion concentration in the plating solution calculated from the accumulated value of the current, or the concentration measuring device 18a and / or the concentration measuring device 18b. Copper ion concentration can be used.

  If a large amount of copper oxide powder is added to the plating solution in a short time, the copper oxide powder may aggregate before being dissolved in the plating solution, and the copper oxide powder may not be completely dissolved. Moreover, when the rotational speed of the screw 30a of the feeder 30 is too high, the copper oxide powder is aggregated in the feeder 30, and a lump of copper oxide powder that is difficult to dissolve in the plating solution may be formed. Therefore, in order to prevent the formation of such an aggregate or lump of the copper oxide powder, it is preferable to set an upper limit value of the rotational speed of the screw 30a. More specifically, it is preferable that the operation control unit 32 controls the motor 31 so that the screw 30a rotates at a rotation speed equal to or lower than a preset upper limit value.

  When the remaining amount of the copper oxide powder in the hopper 27 is small, the operation control unit 32 preferably issues an alarm. More specifically, when the weight measurement value output from the weight measuring device 80 is below the lower limit value, the operation control unit 32 preferably issues an alarm.

  Next, the plating solution tank 35 will be described. 10 is a perspective view of the plating solution tank 35, FIG. 11 is a plan view of the plating solution tank 35, and FIG. 12 is a longitudinal sectional view of the plating solution tank 35 as viewed from the direction indicated by the arrow A in FIG. . The plating solution tank 35 includes a stirring tank 91 in which a stirrer 85 is disposed, and an overflow tank 92 connected to a communication hole 95 provided in the lower part of the stirring tank 91. The overflow tank 92 communicates with the stirring tank 91 through the communication hole 95. The plating solution return pipe 37 connected to the plating tank 2 shown in FIG. 1 is connected to the stirring tank 91. Therefore, the plating solution used in the plating apparatus 1 of FIG.

  The outlet 30 b of the feeder 30 is located above the stirring tank 91, and the copper oxide powder supplied from the feeder 30 is put into the stirring tank 91. The stirrer 85 includes a stirring blade 86 disposed inside the stirring tank 91 and a motor 87 connected to the stirring blade 86. The motor 87 can dissolve the copper oxide powder in the plating solution by rotating the stirring blade 86. The operation of the stirrer 85 is controlled by the operation control unit 32 described above. The overflow tank 92 is adjacent to the stirring tank 91. The plating solution to which the copper oxide powder is added flows into the overflow tank 92 from the stirring tank 91 through the communication hole 95. In order to prevent the undissolved copper oxide powder from flowing out, a filter may be provided in the communication hole 95.

  A bypass channel 93 is provided adjacent to the overflow tank 92. The plating solution flows through the overflow tank 92 and flows into the detour channel 93. The bypass flow path 93 of the present embodiment is a meandering flow path formed by a plurality of baffle plates 88. A notch 88 a is formed at the end of each baffle plate 88. The notches 88 a of the adjacent baffle plates 88 are formed at different positions in the longitudinal direction of the baffle plate 88. Therefore, as indicated by the arrows in FIG. 11, the plating solution to which the copper oxide powder is added meanders in the bypass flow path 93. In one embodiment, the bypass channel 93 may be formed by alternately shifting a plurality of baffle plates 88 having no notches 88a.

  The bypass flow path 93 is provided to ensure a sufficient time for the copper oxide powder to dissolve in the plating solution. The time for the plating solution to pass through the bypass channel 93 is preferably 10 seconds or longer. By providing such a bypass channel 93, the copper oxide powder can be sufficiently dissolved in the plating solution.

  FIG. 13 is a schematic view showing another embodiment of the plating solution tank 35. In this embodiment, the baffle plates 88 are installed in the overflow tank 92, and these baffle plates 88 are alternately shifted in the vertical direction. By these baffle plates 88, a bypass flow path 93 for the plating solution is formed.

  FIG. 14 is a schematic diagram showing still another embodiment of the plating solution tank 35. In this embodiment, the stirring tank 91 in which the stirrer 85 is disposed is provided at the center of the plating solution tank 35. The overflow tank 92 is provided outside the stirring tank 91 and communicates with a communication hole 95 provided at the lower end of the stirring tank 91. The bypass flow path 93 is adjacent to the overflow tank 92, and the bypass flow path 93 is connected to the plating solution supply path 36. The bypass channel 93 is disposed outside the stirring tank 91 and the overflow tank 92. The detour channel 93 in the present embodiment is a spiral channel that extends in a spiral shape. The plating solution flows from the agitation tank 91 into the overflow tank 92 through the communication hole 95, further flows over the overflow tank 92 and flows into the bypass channel 93. The plating solution that has flowed through the bypass channel 93 flows into the plating solution supply path 36. When the detour channel 93 is formed in a spiral shape, that is, in a circular shape in this manner, the plating solution can be retained without providing the baffle plate 88, and the plating solution tank 35 has no corners. It is possible to prevent the powder from settling at the corners of the plating solution tank 35 where the flow of the solution tends to stay, and it is possible to make the plating solution tank 35 compact.

  In any of the embodiments shown in FIGS. 11 to 12 and the embodiment shown in FIG. 13, the time for the plating solution to pass through the detour channel 93 can be lengthened by increasing the number of the baffle plates 88. Although the baffle plate is not provided in the embodiment shown in FIG. 14, it is possible to lengthen the time for the plating solution to pass through the bypass channel 93 by lengthening the bypass channel 93.

  FIG. 15 is a diagram (SEM diagram) showing experimental results obtained by examining the influence of the number of baffle plates on dissolution of copper oxide powder under room temperature conditions. Specifically, when three baffle plates are provided in the bypass channel 93, when two plates are provided, when one plate is provided, and when one plate is provided, the copper oxide powder is dissolved in the bypass channel 93. The copper oxide powder settled on the bottom part of the detour channel 93 after passing through the passed solution was collected and photographed with an enlarged photograph. FIG. 15 shows SEM photographs, and the magnifications are 50 times, 100 times, and 150 times, respectively.

  In consideration of friction loss in the plating solution supply pipe 36 and loss due to valves, meters, fittings, etc., in order to increase the copper concentration in the plating solution in the plating tank 2, it flows in the plating solution tank 35. It is necessary to increase the flow rate of the plating solution to some extent. On the other hand, if the flow rate of the plating solution is too high, the copper oxide powder may not be completely dissolved in the plating solution.

  As can be seen from the experimental results shown in FIG. 15, almost no copper oxide powder remains when the number of baffle plates is 3, but when the number of baffle plates is 0, the copper oxide powder The body remains. That is, as the number of baffle plates increases, dissolution of the copper oxide powder proceeds. The time required for the plating solution to pass through the bypass flow path 93 is approximately 4 seconds when the number of baffle plates is 0, approximately 8 seconds when 1 plate, approximately 12 seconds when 2 plates, 3 plates In the case of, it was about 16 seconds.

  From the results of this experiment, the time required for the plating solution to pass through the bypass flow path 93 is a time longer than at least 10 seconds corresponding to 1.5 baffles. For example, the number of baffle plates is 2 It is preferable to make the length longer than about 12 seconds corresponding to the case where the number of baffle plates is three, and it is more preferable to make it longer than 16 seconds corresponding to the case where the number of baffle plates is three.

  Moreover, although the example which investigated about the influence which the number of a baffle board has on the melt | dissolution of a copper oxide powder was described above, as a means to accelerate | stimulate melt | dissolution of a copper oxide powder, only adjusting the number of a baffle board. It is not limited. As another configuration example, in order to promote the dissolution of the copper oxide powder in the solution, a heater is installed in the plating solution tank 35, for example, the stirring tank 91 to promote the dissolution of the copper oxide powder. It can also be done. However, when the plating solution is heated to an excessively high temperature, there is a concern that coexisting components such as additives in the plating solution are decomposed and deactivated. From this viewpoint, it is preferable that the upper limit of the temperature of the plating solution in the stirring tank 91 is 50 degrees or less so that the additive is not decomposed. When a configuration capable of heating the plating solution is added as described above, one baffle plate is installed in the bypass channel 93 so that the time required for the plating solution to pass through the bypass channel 93 is 8 seconds or more. Alternatively, the plating solution tank 35 may not be provided with a baffle plate. By installing a heater in the stirring tank 91, the copper oxide powder can be sufficiently dissolved simply by allowing the plating solution to pass through the plating solution tank 35.

  Next, a plating system according to a second embodiment will be described with reference to FIG. The plating system according to the second embodiment is different from the plating system according to the first embodiment in that four plating tanks 2 are connected in series. More specifically, the outer tank 6 of each plating tank 2 and the inner tank 5 of the adjacent plating tank 2 are connected by a first connecting pipe 110 and a second connecting pipe 112. A pump 113 for transferring the plating solution is attached to each of the first connecting pipe 110 and the second connecting pipe 112.

  The plating solution supply pipe 36 is connected to one inner tank 5 of the four plating tanks 2, and the plating solution return pipe 37 is connected to the other one outer tank 6 of the four plating tanks 2. Has been. The plating solution supply pipe 36 is provided with a flow meter 38 and a flow rate adjustment valve 39, and the plating solution return pipe 37 is provided with a flow meter 115 and a plating solution discharge valve 116. A concentration measuring device 118 for measuring the copper ion concentration in the plating solution is connected to the outer tub 6 to which the plating solution return pipe 37 is connected. The same constituent elements as those in the first embodiment are denoted by the same reference numerals, and redundant description thereof is omitted.

  The plating system according to the second embodiment automatically measures the copper ion concentration in the plating solution while keeping the copper ion concentration contained in the plating solution inside the plating tank 2 substantially the same. If it is necessary to replenish copper to the plating solution, the plating solution is transferred from the plating device 1 to the plating solution supply device 20 and at a relatively high concentration from the plating solution supply device 20 in the downstairs room. The plating solution containing copper is supplied to the plating apparatus 1.

  Next, for the control sequence for adding copper oxide powder to the plating solution, refer to FIG. 17 for the plating system according to the first embodiment, and FIG. 18 for the plating system according to the second embodiment. I will explain. About the plating system which concerns on 1st Embodiment, as shown in FIG. 17, when the copper ion concentration in a plating solution is less than a setting value in step 1, the plating control part 17 will give the signal which shows a replenishment request value. The data is sent to the operation control unit 32. In step 2, the operation control unit 32 receives the signal and operates the motor 31 until the addition amount of the copper oxide powder to the plating solution reaches the replenishment request value, and the feeder 30 has an amount corresponding to the replenishment request value. The copper oxide powder is added to the plating solution in the plating solution tank 35.

  In Step 3, the operation control unit 32 starts the agitator 85 and agitates the plating solution to which the copper oxide powder is added. The operation control unit 32 stops the stirring operation of the stirrer 85 when a preset time has elapsed. In step 4, the copper oxide powder is dissolved in the plating solution while the plating solution to which the copper oxide powder is added flows through the overflow tank 92 and the bypass channel 93. In step 5, the plating solution in which the copper oxide powder is dissolved is supplied to the plating tank 2 of the plating apparatus 1 through the plating solution supply pipe 36. In this way, the copper ion concentration in the plating solution used in the plating apparatus 1 is maintained at the set value. According to the present embodiment, a required amount of copper oxide powder is automatically added to the plating solution, dissolved, and supplied to each plating tank 2 by a predetermined amount. The copper ion concentration in the plating solution of each plating tank 2 can be managed and maintained so as to have a predetermined value without reducing the throughput.

  In the plating system according to the second embodiment, copper oxide powder is added to the plating solution as follows. That is, the copper ion concentration in the plating solution stored in the plating tank 2 is continuously measured by the concentration measuring device 118, and the measured value of the copper ion concentration is monitored by the plating control unit 17. As shown in FIG. 18, in step 1, when the copper ion concentration in the plating solution in the plating tank 2 falls below the set value, the plating control unit 17 sends a signal indicating the replenishment request value to the plating solution. A signal is sent to the operation control unit 32 of the supply device 20. In step 2, the plating solution discharge valve 116 for discharging the plating solution from the plating tank 2 is opened, and the plating solution is transferred from the plating tank 2 to the plating solution tank 35. The plating solution discharge valve 116 operates so as to be opened for a predetermined time so that a plating solution having a capacity equal to or less than the maximum capacity of the plating solution tank 35 is supplied.

  In step 3, the operation control unit 32 receives the signal and operates the motor 31 until the addition amount of the copper oxide powder to the plating solution reaches the replenishment request value, and the feeder 30 is an amount corresponding to the replenishment request value. The copper oxide powder is added to the plating solution in the plating solution tank 35. Note that step 2 and step 3 may be performed simultaneously, or step 3 may be performed prior to step 2. In Step 4, the operation control unit 32 starts the agitator 85 and agitates the plating solution to which the copper oxide powder is added. The operation control unit 32 stops the stirring operation of the stirrer 85 when a preset time has elapsed.

  In step 5, the copper oxide powder is dissolved in the plating solution while the plating solution to which the copper oxide powder is added flows through the overflow tank 92 and the bypass channel 93. In step 6, the plating solution in which the copper oxide powder is dissolved is supplied to one of the plating tanks 2 of the plating apparatus 1 through the plating solution supply pipe 36. The plurality of plating tanks 2 are connected to each other by the first connecting pipe 110 and the second connecting pipe 112, and drive the pump 113 provided in the first connecting pipe 110 and the second connecting pipe 112 between the plating tanks 2. As a result, the plating solution spreads throughout the plurality of plating tanks 2. In this way, the copper ion concentration in the plating solution used in the plating apparatus 1 is maintained at the set value.

  As shown in FIG. 1, in the plating system according to the first embodiment, the plating solution supply pipe 36 includes a plurality of branch pipes 36 a connected to the plurality of plating tanks 2, respectively. Is supplied to the plating tank 2. In the plating system according to the second embodiment, the plurality of plating tanks 2 communicate with each other, and the plating solution supply pipe 36 is connected to one of the plurality of plating tanks 2. Therefore, in any embodiment, the concentration of the plating solution in the plurality of plating tanks 2 is kept uniform. According to the present embodiment, not only the quality of the copper film formed by plating is improved, but also variations in plating results between the plating tanks 2 can be prevented.

  The average particle diameter of the copper oxide powder is preferably in the range of 10 micrometers to 200 micrometers (refers to a value measured by a laser diffraction / scattering method). Furthermore, the average particle diameter is more preferably in the range of 20 micrometers to 100 micrometers. If the average particle size is too small, there is a concern that the copper oxide powder may be scattered into the space when the powder is supplied. Moreover, when the average particle size is too large, there is a concern that the powder may not be readily dissolved in the solution.

  Furthermore, as another method, it is possible to provide a plating method capable of forming a higher quality copper film on a substrate by using a plating solution to which a solid material in which metallic copper is formed into pellets is added. it can. When a solid material in which metallic copper is formed into a pellet is used in this way, a copper powder with a small amount of impurities is mixed with the copper oxide powder, so that the plating film quality can be improved. And since it is a pellet form, scattering of the powder at the time of powder supply can be prevented more effectively.

  In general, when alkali metal powder is used, there may be a risk of ignition or explosion, but metal copper powder itself is less likely to ignite or explode, so metal copper powder should be formed into pellets. Can do. As described with reference to FIG. 1 and the like, a solid material obtained by forming such metal copper into a pellet shape is supplied to the plating solution tank 35 instead of the copper oxide powder or together with the copper oxide powder. You can also. Moreover, you may use the solid substance which shape | molded both metal copper and copper oxide powder in the pellet form.

  In addition, when the solid substance shape | molded in the pellet form as mentioned above is too hard, it may cause the malfunction of the plating solution supply apparatus 20, and when too soft, there is a possibility that powder scattering cannot be effectively prevented. Therefore, the hardness of the pellet is preferably in an appropriate range.

  Moreover, although the solid substance made into the pellet form was demonstrated, the copper solid ball | bowl made into the sphere of a small particle size, and the strip | belt shaped object which shape | molded solid copper into the ribbon or the tape form are used for copper plating processing. You can also. In this case, the shaft of the feeder 30 may have a solid crushing effect.

  In the above embodiment, the powder container and the plating solution supply device in the case of plating copper on the substrate have been described. However, the case where the metal species to be plated on the substrate is not copper but another metal such as indium is also described above. Powder container, plating system, and plating method can be used.

  The embodiment described above is described for the purpose of enabling the person having ordinary knowledge in the technical field to which the present invention belongs to implement the present invention. Various modifications of the above embodiment can be naturally made by those skilled in the art, and the technical idea of the present invention can be applied to other embodiments. Accordingly, the present invention is not limited to the described embodiments, but is to be construed in the widest scope according to the technical idea defined by the claims.

DESCRIPTION OF SYMBOLS 1 Plating apparatus 2 Plating tank 5 Inner tank 6 Outer tank 8 Undissolved anode 9 Anode holder 11 Substrate holder 15 Plating power supply 17 Plating control part 18a, 18b Concentration measuring device 20 Plating solution supply device 21 Powder container 24 Sealed chamber 26 Input port 27 Hopper 28 Connection seal 30 Feeder 31 Motor 32 Operation control unit 35 Plating solution tank 36 Plating solution supply pipe 36a Branch pipe 37 Plating solution return pipe 37a Discharge pipe 38 Flow meter 39 Flow control valve 40 Pump 41 Filter 42 Pure water supply line 43 Opening and closing valve 44 Flow meter 45 Container body 46 Powder conduit 47 Flow control valve 48 Valve 49 Handle 50 Cap 55 Door 56 Gloves 58 Exhaust port 61 Vacuum clamp 65 Vibration device 66 Base 68 Frame 70 Ejector 72 Compressed air supply pipe 73 Bracket 74 Lid 75 Trachea 80 Weight measuring device 81 Surrounding cover 83 Inert gas supply line 85 Stirrer 86 Stirrer blade 87 Motor 88 Baffle plate 88a Notch 91 Stirrer tank 92 Overflow tank 93 Detour channel 95 Communication hole 110 First connection pipe 112 Second connection pipe 113 Pump 115 Flow meter 116 Plating solution discharge valve 118 Concentration measuring device W Substrate

Claims (26)

An apparatus for supplying a plating solution in which powder containing at least a metal used for plating is dissolved to a plating tank,
A hopper having an input port connectable to a powder conduit of a powder container containing the powder;
A feeder communicating with the lower opening of the hopper;
A motor coupled to the feeder;
An apparatus comprising: a plating solution tank connected to an outlet of the feeder and dissolving the powder in the plating solution. A weight measuring device for measuring the weight of the hopper and the feeder;
The apparatus according to claim 1, further comprising an operation control unit configured to control an operation of the motor based on a change in the measured value of the weight.   The operation control unit calculates an addition amount of the powder to the plating solution from a change in the measured value of the weight, and operates the motor until the addition amount reaches a target value. Item 3. The apparatus according to Item 2.   The apparatus according to any one of claims 1 to 3, wherein the inlet of the hopper has a connection seal that gradually decreases in diameter as the distance from the tip thereof increases.   The device according to claim 4, wherein the connection seal is made of an elastic material. Further comprising a sealed chamber in which the inlet of the hopper is disposed,
The said sealed chamber is equipped with the door which can carry in the said powder container in the inside, and the glove which comprises a part of wall of the said sealed chamber, It is any one of Claim 1 thru | or 5 characterized by the above-mentioned. The device described.   The apparatus of claim 6, wherein the sealed chamber includes an exhaust port for communicating the internal space with a negative pressure source.   The apparatus according to claim 6 or 7, wherein a vibration device for vibrating the powder container is disposed in the sealed chamber.   The apparatus according to any one of claims 6 to 8, wherein a vacuum clamp for holding the powder container is disposed in the sealed chamber.   The apparatus according to any one of claims 1 to 9, wherein the plating solution tank includes a stirrer that stirs the plating solution.   The said plating solution tank is equipped with the stirring tank in which the said stirrer is arrange | positioned, The overflow tank connected to the communicating hole provided in the lower part of this stirring tank, The apparatus of Claim 10 characterized by the above-mentioned.   The apparatus according to claim 11, wherein the plating solution tank further includes a bypass channel adjacent to the overflow tank.   The apparatus according to claim 11, wherein the plating solution tank further includes a plurality of baffle plates disposed in the overflow tank, and the plurality of baffle plates are alternately arranged. An encircling cover that surrounds a connection portion between the feeder and the plating solution tank;
The apparatus according to any one of claims 1 to 13, further comprising an inert gas supply line communicating with the inside of the enclosure cover. A plurality of plating tanks for plating a substrate;
A device according to any one of claims 1 to 14,
A plating system comprising: a plating solution supply pipe extending from the apparatus to the plurality of plating tanks.   The plating system according to claim 15, further comprising a plating solution return pipe extending from the plurality of plating tanks to the apparatus. A method for supplying a powder containing at least a metal used for plating to a plating solution,
The powder conduit of the powder container containing the powder is connected to the inlet of the hopper,
Supplying the powder from the powder container to the hopper;
While measuring the weight of the hopper in which the powder is stored and the feeder communicating with the lower opening of the hopper, the feeder is operated,
A method of adding the powder to a plating solution by the feeder based on a change in the measured value of the weight.   The method according to claim 17, further comprising stirring the plating solution to which the powder is added. Calculate the amount of the powder added to the plating solution from the change in the measured weight value,
The method according to claim 17 or 18, further comprising the step of operating the feeder until the addition amount reaches a target value. A powder container for containing a powder containing at least a metal used for plating,
A container body capable of accommodating the powder therein;
A powder conduit connected to the container body;
And a valve attached to the powder conduit.   The powder container according to claim 20, wherein a tip of the powder conduit has a truncated cone shape. Transferring the plating solution from the plating tank to the plating solution tank;
Based on the concentration of metal ions in the plating solution in the plating tank, calculating the amount to be added to the plating solution stored in the plating solution tank, the powder containing at least the metal used for plating,
Supplying a powder containing at least a metal used for the plating to a plating solution stored in the plating solution tank;
Dissolving the powder in a plating solution contained in the plating solution tank;
Supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank;
Contacting the substrate with a plating solution contained in the plating tank;
A step of causing an electrochemical reaction in the plating solution contained in the plating tank so that the metal is deposited on the substrate surface in the plating solution;
A method of plating a substrate, comprising:   The plating tank is composed of a plurality of plating tanks. When supplying the plating liquid stored in the plating liquid tank to the plurality of plating tanks, the plating liquid is respectively supplied to the plurality of plating tanks while controlling the flow rate of the plating liquid. The method for plating a substrate according to claim 22, wherein the substrate is supplied. The plating tank consists of a plurality of plating tanks, and constantly monitors metal ions in the plating solution in the plurality of plating tanks,
When the concentration of the metal ions is lower than a predetermined value, the plating solution in the plurality of plating tanks is transferred from the plating tank to the plating solution tank, and the plating solution is transferred from the plating solution tank to the plurality of plating tanks. The method for plating a substrate according to claim 22, wherein the substrate is supplied to any one of the above. In a non-transitory computer-readable recording medium storing a computer program for executing a method of electroplating a substrate,
The method of electroplating the substrate includes:
Transferring the plating solution from the plating tank to the plating solution tank;
Supplying a powder containing at least a metal used for plating to a plating solution stored in the plating solution tank;
Dissolving the powder in a plating solution contained in the plating solution tank;
Supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank;
Contacting the substrate with a plating solution contained in the plating tank;
A step of causing an electrochemical reaction in the plating solution contained in the plating tank so that the metal is deposited on the substrate surface in the plating solution;
A storage medium comprising: In a non-transitory computer-readable storage medium storing a computer program for executing a method of electroplating a substrate,
The method of electroplating the substrate includes:
Monitoring whether the concentration of metal ions contained in the plating solution in the plating tank is lower than a set value;
When the concentration of the metal ions is lower than a predetermined value, calculating the amount of powder containing at least metal to be added to the plating solution;
Transferring the plating solution from the plating tank to the plating solution tank;
Supplying the powder to the plating solution contained in the plating solution tank until the calculated amount is reached;
Dissolving the powder in a plating solution contained in the plating solution tank;
Supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank;
Contacting the substrate with a plating solution contained in the plating tank;
A step of causing an electrochemical reaction in the plating solution contained in the plating tank so that the metal is deposited on the substrate surface in the plating solution;
A storage medium comprising: