JP2017130609A - Semiconductor light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving reliability.SOLUTION: According to an embodiment, a semiconductor light-emitting element comprises a substrate, first to third semiconductor layers, first and second electrodes, a first metal layer, and an insulating layer. The second semiconductor layer is provided between the substrate and a part of the first semiconductor layer. The third semiconductor layer is provided between the second semiconductor layer and the part. The first electrode is provided between the substrate and another part of the first semiconductor layer, and electrically connected with the first semiconductor layer. The second electrode is provided between the substrate and the second semiconductor layer, and electrically connected with the second semiconductor layer. The first metal layer is provided between the substrate and the first electrode and between the substrate and the second electrode, and contacted with one of the first electrode and the second electrode, and contains titanium. The insulating layer is provided between the other of the first electrode and the second electrode and the first metal layer, and insulates between the first semiconductor layer and the first metal layer and between the other of the first electrode and the second electrode and the first metal layer.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a semiconductor light emitting device.

  In semiconductor light emitting devices, high reliability is desired.

JP 2012-243825 A

  Embodiments of the present invention provide a semiconductor light emitting device capable of improving reliability.

  According to the embodiment, the semiconductor light emitting device includes a base, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first electrode, a second electrode, a first metal layer, and an insulating layer. And including. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is provided between the base and a part of the first semiconductor layer and has a second conductivity type. The third semiconductor layer is provided between the second semiconductor layer and the part. The first electrode is provided between the base and another part of the first semiconductor layer and is electrically connected to the first semiconductor layer. The second electrode is provided between the base and the second semiconductor layer and is electrically connected to the second semiconductor layer. The first metal layer is provided between the base and the first electrode, and between the base and the second electrode, is in contact with one of the first electrode and the second electrode, and is formed of titanium. Including. The insulating layer is provided between the other of the first electrode and the second electrode and the first metal layer, between the first semiconductor layer and the first metal layer, and the first electrode. And insulating the other of the second electrode and the first metal layer.

1 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a first embodiment. 1 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a first embodiment. 1 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a first embodiment. FIG. 6 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a second embodiment. FIG. 6 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic cross-sectional view illustrating the semiconductor light emitting element according to the first embodiment.
As shown in FIG. 1, the semiconductor light emitting device 110 according to the embodiment includes a base 71, a first semiconductor layer 11, a second semiconductor layer 12, a third semiconductor layer 13, a first electrode 51, Two electrodes 52, a first metal layer 41, and an insulating layer 81 are included.

  The first semiconductor layer 11 is separated from the base 71 in the first direction.

  The first direction is the Z-axis direction. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  The first conductivity type is, for example, an n type. At this time, the second conductivity type described later is a p-type. In the embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

  The first semiconductor layer 11 includes a first semiconductor region 11a, a second semiconductor region 11b, and a third semiconductor region 11c. The second semiconductor region 11b is aligned with the first semiconductor region 11a in the second direction. The second direction intersects the first direction (Z-axis direction). The second direction is, for example, along the X-axis direction. The third semiconductor region 11c is provided between the first semiconductor region 11a and the second semiconductor region 11b.

  The second semiconductor layer 12 is provided between the base 71 and the second semiconductor region 11b. The second semiconductor layer 12 is of the second conductivity type (p-type in this example).

  The third semiconductor layer 13 is provided between the second semiconductor layer 12 and the second semiconductor region 11b. The third semiconductor layer 13 is, for example, a light emitting layer.

  The first semiconductor layer 11 includes, for example, an n-type nitride semiconductor. The first semiconductor layer 11 includes, for example, n-type GaN. The second semiconductor layer 12 includes, for example, a p-type nitride semiconductor. The second semiconductor layer 12 includes, for example, p-type GaN. The third semiconductor layer 13 includes, for example, a nitride semiconductor. The third semiconductor layer 13 includes, for example, a well layer. The well layer includes, for example, InGaN. The third semiconductor layer 13 includes, for example, a barrier layer. The barrier layer includes, for example, GaN. A well layer is disposed between the two barrier layers. The number of well layers may be 1 or 2 or more.

  The first electrode 51 is provided between the base 71 and the first semiconductor region 11a. The first electrode 51 is electrically connected to the first semiconductor layer 11. In this example, the first electrode 51 is in contact with the first semiconductor region 11a.

  The second electrode 52 is provided between the base 71 and the second semiconductor layer 12. The second electrode 52 is electrically connected to the second semiconductor layer 12. In this example, the second electrode 52 is in contact with the second semiconductor layer 12.

  The first metal layer 41 is provided between the base 71 and the first electrode 51, between the base 71 and the second electrode 52, and between the base 71 and the third semiconductor region 11c. The first metal layer 41 is in contact with one of the first electrode 51 and the second electrode 52. In this example, the first metal layer 41 is in contact with the second electrode 52. The first metal layer 41 includes titanium. The first metal layer 41 is a titanium layer.

  The insulating layer 81 includes a first insulating region 81a and a second insulating region 81b. The insulating layer 81 is in contact with the first metal layer 41. The first insulating region 81 a is provided between the other of the first electrode 51 and the second electrode 52 and the first metal layer 41. For example, the first insulating region 81 a is provided between the first electrode 51 and the first metal layer 41. For example, the second insulating region 81b is provided between the first metal layer 41 and the third semiconductor region 11c. The insulating layer 81 is also in contact with the other of the first electrode 51 and the second electrode 52 (in this example, the first electrode 51). The insulating layer 81 electrically insulates the first electrode 51 and the second electrode 52.

  For example, the insulating layer 81 insulates between the first semiconductor layer 11 and the first metal layer 41. The insulating layer 81 insulates the first metal layer 41 from the other of the first electrode 51 and the second electrode 52 (the first electrode 51 in this example). The insulating layer 81 insulates between the third semiconductor layer 13 and the first metal layer 41.

  In this example, second to fifth metal layers 42 to 45 are further provided. The second metal layer 42 is provided between the first metal layer 41 and the base 71. The third metal layer 43 is provided between the second metal layer 42 and the base 71. The fourth metal layer 44 is provided between the third metal layer 43 and the base 71. The fifth metal layer 45 is provided between the fourth metal layer 44 and the base.

  The second metal layer 42 is in contact with the first metal layer 41. The third metal layer 43 is in contact with the second metal layer 42. The fourth metal layer 44 is in contact with the third metal layer 43. The fifth metal layer 45 is in contact with the fourth metal layer 44. The fifth metal layer 45 is in contact with the base body 71.

  For example, the second metal layer 42 includes platinum. The second metal layer 42 is, for example, a platinum layer. The third metal layer 43 includes, for example, titanium. The third metal layer 43 is, for example, a titanium layer. The fourth metal layer 44 includes, for example, nickel. The fourth metal layer 44 is, for example, a nickel layer. The fifth metal layer 45 includes, for example, tin. The fifth metal layer 45 may include AuSn or the like. The fifth metal layer 45 may include, for example, solder.

  The second to fourth metal layers 42 to 44 are included in the intermediate layer 46, for example. The first to fourth metal layers 41 to 44 are, for example, barrier metal layers.

  The concentration of titanium in the first metal layer 41 is higher than the concentration of titanium in the second metal layer 42. The concentration of platinum in the second metal layer 42 is higher than the concentration of platinum in the first metal layer 41. The concentration of platinum in the second metal layer 42 is higher than the concentration of platinum in the third metal layer 43. The concentration of titanium in the third metal layer 43 is higher than the concentration of titanium in the second metal layer 42. The concentration of titanium in the third metal layer 43 is higher than the concentration of titanium in the fourth metal layer 44. The concentration of nickel in the fourth metal layer 44 is higher than the concentration of nickel in the third metal layer 43. The concentration of nickel in the fourth metal layer 44 is higher than the concentration of nickel in the fifth metal layer 45.

  For example, a semiconductor crystal film including the first semiconductor layer 11, the third semiconductor layer 13, and the second semiconductor layer 12 is formed on a growth substrate (not shown). A part of the third semiconductor layer 13 and a part of the second semiconductor layer 12 are removed, and a part of the first semiconductor layer 11 is exposed. A first electrode 51 is formed on this part of the first semiconductor layer 11. A second electrode 52 is formed on the second semiconductor layer 12. For example, the insulating layer 81 is formed on the first electrode 51 and on the third semiconductor region 11 c of the first semiconductor layer 11. The first metal layer 41 is formed on the insulating layer 81 and on the second electrode 52. Second to fourth metal layers 42 to 44 are sequentially formed on the first metal layer 41. A metal film that becomes a part of the fifth metal layer 45 is formed on the fourth metal layer 44. On the other hand, a base 71 is prepared. On the surface of the base 71, a metal film that becomes a part of the fifth metal layer 45 is provided. These metal films are joined to face each other. Thereby, the base 71 is connected to the semiconductor layer. Thereafter, the growth substrate is removed. Thereby, the semiconductor light emitting device 110 is formed.

  The semiconductor light emitting device 110 is, for example, a thin film type light emitting device. For the base 71, for example, a conductive material is used. For the base 71, for example, a silicon substrate or the like is used.

  The first metal layer 41 is electrically connected to the base 71, for example. The first metal layer 41 is electrically connected to one of the first electrode 51 and the second electrode 52 (in this example, the second electrode 52).

  For example, the first electrode 51 is electrically connected to a pad electrode not shown in FIG. A voltage is applied between the pad electrode and the substrate 71. Thereby, a voltage is applied between the first electrode 51 and the second electrode 52. With this voltage, a current is supplied to the third semiconductor layer 13 via the first semiconductor layer 11 and the second semiconductor layer 12. Based on the current, light is emitted from the third semiconductor layer 13. The semiconductor light emitting element 110 is, for example, a semiconductor light emitting diode (LED).

  The insulating layer 81 includes, for example, silicon oxide, silicon nitride, or silicon oxynitride. The insulating layer 81 may include a layer containing silicon oxide and a layer containing silicon nitride. These layers are stacked.

  For example, aluminum is used for the first electrode 51. Thereby, a high reflectance is obtained. High light extraction efficiency can be obtained. Furthermore, a low contact resistance is obtained. In addition, at least one of Ag (silver) and W (tungsten) may be used for the first electrode 51.

  For example, silver is used for the second electrode 52. Thereby, a high reflectance is obtained. High light extraction efficiency can be obtained. Furthermore, a low contact resistance is obtained. In addition, for the second electrode 52, an Ag alloy, a Ni / Ag laminated film, or the like may be used.

  In the semiconductor light emitting device 110, a titanium layer is used as the first metal layer 41. Thereby, it turned out that peeling between the 1st metal layer 41 and the insulating layer 81 is suppressed. Thereby, a semiconductor light emitting device capable of improving reliability can be provided.

  For example, there is a reference example using a nickel layer as the first metal layer 41. In this reference example, a phenomenon was observed in which the light output decreased during operation. When this sample was investigated, peeling was observed between the insulating layer 81 and the first metal layer 41 of nickel.

  The inventor of the present application conducted an experiment to change the material of the first metal layer 41 with respect to this phenomenon. As a result, it was found that peeling can be suppressed when a titanium layer is used as the first metal layer 41.

  Titanium is more likely to diffuse into other metal layers than nickel. For example, when a heat treatment is performed at 300 ° C. for 10 minutes, the distance of diffusion of titanium into the silver layer is 26.4 nm. On the other hand, when the heat treatment is performed at 300 ° C. for 10 minutes, the diffusion distance of nickel into the silver layer is 0.01 nm. As described above, since nickel is difficult to diffuse, it has been considered preferable to use nickel as the layer in contact with the second electrode 52. From the viewpoint of diffusion, it has been considered that it is not preferable to use titanium as a layer in contact with the second electrode 52.

  However, according to experiments by the inventors of the present application, as described above, in the reference example using the nickel layer as the first metal layer 41, it was found that peeling easily occurs.

  On the other hand, within the range of appropriate heat treatment conditions, even when titanium is used as the first metal layer 41, titanium diffusion can be practically suppressed. For example, when titanium is used as the first metal layer 41 as described above, the thickness of the second electrode 52 made of silver is set to 100 nm or more, so that the second semiconductor layer is formed with titanium via the second electrode 52. Reaching 12 can be substantially suppressed.

  The thickness of the second silver electrode 52 is preferably 100 nm or more. This thickness is more preferably 150 nm or more. When the thickness of the second electrode 52 is 150 nm or more, it is possible to more reliably suppress titanium from reaching the second semiconductor layer 12 via the second electrode 52. The thickness of the second silver electrode 52 is preferably 400 nm or less. When the thickness of the second electrode 52 exceeds 400 nm, for example, the barrier metal coverage is insufficient and / or the step breakage is likely to occur in the stepped portion of silver. Thereby, tin becomes easy to diffuse, which may cause a problem. The thickness of the second silver electrode 52 is, for example, about 200 nm.

  In the embodiment, the thickness of the first metal layer 41 (titanium layer) is, for example, not less than 5 nm and not more than 30 nm. The thickness of the first metal layer 41 is, for example, about 10 nm.

  The thickness of the second metal layer 42 (for example, a platinum layer) is, for example, not less than 50 nm and not more than 200 nm. The thickness of the second metal layer 42 is about 100 nm, for example.

  The thickness of the third metal layer 43 (for example, the second titanium layer) is, for example, not less than 100 nm and not more than 300 nm. The thickness of the second metal layer 42 is about 200 nm, for example.

  The thickness of the fourth metal layer 44 (for example, nickel layer) is, for example, not less than 500 nm and not more than 2000 nm. The thickness of the second metal layer 42 is about 1000 nm, for example.

  The thickness of the fifth metal layer 45 (for example, a layer containing tin) is, for example, not less than 500 nm and not more than 3000 nm. The thickness of the second metal layer 42 is about 1000 nm, for example.

  With such a thickness, for example, a stable strength can be obtained. High reliability is obtained. In the embodiment, titanium contained in the first metal layer 41 may be contained in the second metal layer 42. Platinum contained in the second metal layer 42 may be contained in the third metal layer 43. Titanium contained in the third metal layer 43 may be contained in the second metal layer 42. Titanium contained in the third metal layer 42 may be contained in the fourth metal layer 44. Nickel contained in the fourth metal layer 44 may be contained in the third metal layer 43. Nickel contained in the fourth metal layer 42 may be contained in the fifth metal layer 45. Tin contained in the fifth metal layer 45 may be contained in the fourth metal layer 44.

  In the embodiment, the thickness of the base 71 is, for example, not less than 100 μm and not more than 1000 μm. The thickness of the base 71 is arbitrary.

FIG. 2 is a schematic cross-sectional view illustrating the semiconductor light emitting element according to the first embodiment.
FIG. 2 shows an example of the insulating layer 81. In FIG. 2, the base 71 and the second to fifth metal layers 42 to 45 are omitted.

  As shown in FIG. 2, the insulating layer 81 may include a plurality of stacked insulating films. In this example, the insulating layer 81 includes a first insulating film 81p, a second insulating film 81q, and a third insulating film 81r. The first insulating film 81 p is provided between the other of the first electrode 51 and the second electrode 52 (in this example, the first electrode 51) and the first metal layer 41. The second insulating film 81q is provided between the first insulating film 81p and the first metal layer 41. The third insulating film 81r is provided between the second insulating film 81q and the first metal layer 41.

  In this example, the first insulating film 81 p is further provided between the third semiconductor region 11 c of the first semiconductor layer 11 and the first metal layer 41. Further, the first insulating film 81 p is provided between the side surface 11 bs of the second semiconductor region 11 b of the first semiconductor layer 11 and the first metal layer 41. The side surface 11bs intersects with a direction (direction along the XY plane) perpendicular to the first direction (Z-axis direction). The first insulating film 81 p is provided between the side surface 51 s of the first electrode 51 and a part of the second semiconductor region 11 b of the first semiconductor layer 11. The side surface 51s intersects the direction along the XY plane. The first insulating film 81p includes the surface of the electrode (the first electrode 51 or the second electrode 52), the side surface 51s of the first electrode 51, the surface of the third semiconductor region 11c of the first semiconductor layer 11, and the first semiconductor layer. 11 in contact with the side surface 11bs of the second semiconductor region 11b.

  For example, at least one of the first insulating film 81p and the third insulating film 81r includes silicon oxide. The second insulating film 81q includes silicon nitride. For example, the first insulating film 81p and the third insulating film 81r are silicon oxide films.

FIG. 3 is a schematic cross-sectional view illustrating the semiconductor light emitting element according to the first embodiment.
FIG. 3 illustrates another semiconductor light emitting device 111 according to this embodiment.
The semiconductor light emitting device 111 includes a base 71, a first semiconductor layer 11, a second semiconductor layer 12, a third semiconductor layer 13, a first electrode 51, a first metal layer 41, and an insulating layer 81. Including. Since these are the same as those of the semiconductor light emitting device 110, description thereof will be omitted.

  The semiconductor light emitting device 111 further includes a first pad electrode 51p, a first connection conductive layer 51c, and an interlayer insulating layer 82.

  One end of the first connection conductive layer 51 c is electrically connected to the first electrode 51. One end of the first connection conductive layer 51 c is electrically connected to the first electrode 51 at a position not shown in FIG. 3 (for example, a different position in the Y-axis direction). A first pad electrode 51p is provided on a part of the first connection conductive layer 51c. The first pad electrode 51p is electrically connected to the first connection conductive layer 51c.

  Thus, the first pad electrode 51p is electrically connected to the first electrode 51. The first pad electrode 51p is separated from the base body 71 in the first direction (Z-axis direction). At least a part of the first pad electrode 51p overlaps the first semiconductor layer 11 in a direction perpendicular to the first direction (for example, the X-axis direction).

  A first connection conductive layer 51 c is provided between the first pad electrode 51 p and the base 71. An interlayer insulating layer 82 is provided between the first connection conductive layer 51 c and the base 71. A first metal layer 41, an intermediate layer 46 (second to fourth metal layers 42 to 44), and a fifth metal layer 45 are provided between the interlayer insulating layer 82 and the base 71. The interlayer insulating layer 82 insulates between the first metal layer 41 and the first connection conductive layer 51c.

  In this example, a third electrode 73 is further provided. A base 71 is provided between the third electrode 73 and the fifth metal layer 45. A voltage is applied between the third electrode 73 and the first pad electrode 51p. Thereby, light is emitted from the third semiconductor layer 13.

  The stacked body 10 including the first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13 has a side surface 10s. The side surface 10s intersects a direction (direction along the XY plane) perpendicular to the first direction (Z-axis direction).

  In this example, an insulating film 85 is further provided. The insulating film 85 covers at least a part of the side surface 10 s of the stacked body 10.

  The first semiconductor layer 11 has a first surface 11p and a second surface 11q. The second surface 11q is a surface on the third semiconductor layer 13 side. In the first semiconductor layer 11, the first surface 11p is opposite to the second surface 11q. In this example, the first surface 11p has irregularities 11dp. The light emitted from the third semiconductor layer 13 is efficiently emitted from the first surface 11p of the first semiconductor layer 11 to the outside due to the unevenness 11dp. High light extraction efficiency can be obtained.

  Also in the semiconductor light emitting element 111, the first metal layer 41 containing titanium is provided. High reliability is obtained.

(Second Embodiment)
FIG. 4 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to the second embodiment.
As shown in FIG. 4, the semiconductor light emitting device 120 according to this embodiment also includes the base 71, the first semiconductor layer 11, the second semiconductor layer 12, the third semiconductor layer 13, the first electrode 51, Two electrodes 52, a first metal layer 41, and an insulating layer 81 are included. In the semiconductor light emitting device 120, the base 71, the first semiconductor layer 11, the second semiconductor layer 12, the third semiconductor layer 13, the first electrode 51, and the second electrode 52 are the same as those of the semiconductor light emitting device 110, so that description will be given. Omitted.

  The first metal layer 41 is provided between the base 71 and the first electrode 51, between the base 71 and the second electrode 52, and between the base 71 and the third semiconductor region 11c. The first metal layer 41 is in contact with one of the first electrode 51 and the second electrode 52. In the semiconductor light emitting device 120, the first metal layer 41 is in contact with the first electrode 51. Also in this example, the first metal layer 41 includes titanium.

  The insulating layer 81 includes a first insulating region 81a and a second insulating region 81b. The first insulating region 81 a is provided between the other of the first electrode 51 and the second electrode 52 and the first metal layer 41. In the semiconductor light emitting device 120, the first insulating region 81 a is provided between the second electrode 52 and the first metal layer 41. The second insulating region 81b is provided between the first metal layer 41 and the third region. The second insulating region 81 b is provided between the first electrode 51 and the second electrode 52. The second insulating region 81 b insulates between the first electrode 51 and the second semiconductor layer 12 and between the first electrode 51 and the third semiconductor layer 13.

  For example, the insulating layer 81 insulates between the second semiconductor layer 12 and the first metal layer 41. The insulating layer 81 insulates between the other of the first electrode 51 and the second electrode 52 (in this example, the second electrode 52) and the first metal layer 41. The insulating layer 81 insulates between the third semiconductor layer 13 and the first metal layer 41.

  In this example, the first metal layer 41 is in contact with the first electrode 51. The base 71 is electrically connected to the first electrode 51 through the first to fifth metal layers 41 to 45. The first insulating region 81 a is provided between the first metal layer 41 and the second electrode 52. The second electrode 52 is electrically connected to a pad electrode not shown in FIG. A voltage is applied between the pad electrode and the substrate 71. Thereby, a voltage is applied between the first electrode 51 and the second electrode 52. With this voltage, a current is supplied to the third semiconductor layer 13 via the first semiconductor layer 11 and the second semiconductor layer 12. Based on the current, light is emitted from the third semiconductor layer 13. The semiconductor light emitting element 120 is, for example, a semiconductor light emitting diode (LED).

  Also in this example, the first metal layer 41 includes titanium. Thereby, for example, peeling between the first metal layer 41 and the insulating layer 81 is suppressed. Thereby, a semiconductor light emitting device capable of improving reliability can be provided.

  In this example, the first electrode 51 includes, for example, aluminum. The thickness of the first electrode 51 is 100 nm or more. Thereby, it is possible to suppress diffusion of titanium contained in the first metal layer 41 into the semiconductor layer or the like via the first electrode 51. The thickness of the first electrode 51 may be 200 nm or more. Thereby, the diffusion of titanium into the semiconductor layer can be suppressed more reliably.

FIG. 5 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to the second embodiment.
FIG. 5 illustrates another semiconductor light emitting device 121 according to this embodiment.
The semiconductor light emitting device 121 includes a base 71, a first semiconductor layer 11, a second semiconductor layer 12, a third semiconductor layer 13, a first electrode 51, a first metal layer 41, and an insulating layer 81. Including. Since these are the same as those of the semiconductor light emitting device 120, description thereof will be omitted.

  The semiconductor light emitting device 121 further includes a second pad electrode 52p, a second connection conductive layer 52c, and an interlayer insulating layer 82.

  The second connection conductive layer 52 c is continuous with the second electrode 52. A second pad electrode 52p is provided on part of the second connection conductive layer 52c. The second pad electrode 52p is electrically connected to the second connection conductive layer 52c.

  Thus, the second pad electrode 52p is electrically connected to the second electrode 52. The second pad electrode 52p is separated from the base body 71 in the first direction (Z-axis direction). At least a part of the second pad electrode 52p overlaps the second semiconductor layer 12 in a direction perpendicular to the first direction (for example, the X-axis direction).

  A second connection conductive layer 52 c is provided between the second pad electrode 52 p and the base 71. An interlayer insulating layer 82 is provided between the second connection conductive layer 52 c and the base 71. A first metal layer 41, an intermediate layer 46 (second to fourth metal layers 42 to 44), and a fifth metal layer 45 are provided between the interlayer insulating layer 82 and the base 71. The interlayer insulating layer 82 insulates between the first metal layer 41 and the second connection conductive layer 52c.

  In this example, the third electrode 73 is further provided. A base 71 is provided between the third electrode 73 and the fifth metal layer 45. A voltage is applied between the third electrode 73 and the second pad electrode 52p. Thereby, light is emitted from the third semiconductor layer 13.

  The stacked body 10 including the first semiconductor layer 11, the second semiconductor layer 12, and the third semiconductor layer 13 has a side surface 10s. The insulating film 85 covers at least a part of the side surface 10 s of the stacked body 10.

  In this example, the first surface 11p of the first semiconductor layer 11 has irregularities 11dp. High light extraction efficiency can be obtained.

  Also in the semiconductor light emitting device 121, the first metal layer 41 containing titanium is provided. High reliability is obtained.

  According to the embodiment, a semiconductor light emitting device capable of improving reliability can be provided.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as a substrate, a semiconductor layer, a metal layer, a pad layer, a metal layer, a metal film, an electrode, and a connection part included in the semiconductor light emitting device is appropriately selected by those skilled in the art from a known range. By doing so, the present invention is included in the scope of the present invention as long as the same effects can be obtained and similar effects can be obtained.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting elements that can be implemented by those skilled in the art based on the semiconductor light-emitting elements described above as embodiments of the present invention are included in the scope of the present invention as long as they include the gist of the present invention. Belonging to.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Laminated body, 10s ... Side surface, 11 ... 1st semiconductor layer, 11a, 11b, 11c ... 1st-3rd semiconductor region, 11bs ... Side surface, 11dp ... Concavity and convexity, 11p ... 1st surface, 11q ... 2nd surface, DESCRIPTION OF SYMBOLS 12 ... 2nd semiconductor layer, 13 ... 3rd semiconductor layer, 41-45 ... 1st-5th metal layer, 46 ... Intermediate | middle layer, 51 ... 1st electrode, 51c ... 1st connection conductive layer, 51s ... Side surface, 52 ... second electrode 52c ... second connection conductive layer 71 ... base body 73 ... third electrode 81 ... insulating layer 81a, 81b ... first and second insulation regions 81p-81r ... first to third insulation Film, 82 ... interlayer insulating layer, 85 ... insulating film, 110, 111, 120, 121 ... semiconductor light emitting device

Claims (8)

A substrate;
A first semiconductor layer of a first conductivity type;
A second semiconductor layer of a second conductivity type provided between the base and a part of the first semiconductor layer;
A third semiconductor layer provided between the second semiconductor layer and the part;
A first electrode provided between the base and another part of the first semiconductor layer and electrically connected to the first semiconductor layer;
A second electrode provided between the base and the second semiconductor layer and electrically connected to the second semiconductor layer;
A first metal layer provided between the base and the first electrode and between the base and the second electrode, in contact with one of the first electrode and the second electrode, and containing titanium;
Provided between the other of the first electrode and the second electrode and the first metal layer, between the first semiconductor layer and the first metal layer, and between the first electrode and the second electrode An insulating layer that insulates between the other metal layer and the first metal layer;
A semiconductor light emitting device comprising:   The semiconductor light emitting element according to claim 1, wherein the one is the second electrode.   The semiconductor light emitting element according to claim 2, wherein the second electrode contains silver.   The semiconductor light emitting element according to claim 1, wherein the one is the first electrode.   5. The semiconductor light emitting element according to claim 2, wherein the one thickness is 100 nanometers or more. A second metal layer comprising platinum provided between the first metal layer and the substrate;
A third metal layer comprising titanium provided between the second metal layer and the substrate;
A fourth metal layer comprising nickel provided between the third metal layer and the substrate;
A fifth metal layer including tin provided between the fourth metal layer and the base;
Further equipped with,
The semiconductor light-emitting device according to claim 1. The insulating layer includes a first insulating film, a second insulating film, and a third insulating film,
The first insulating film is provided between the other of the first electrode and the second electrode and the first metal layer,
The second insulating film is provided between the first insulating film and the first metal layer,
The third insulating film is provided between the second insulating film and the first metal layer;
The semiconductor light emitting element according to claim 1. At least one of the first insulating film and the third insulating film includes silicon oxide,
The second insulating film includes silicon nitride.
The semiconductor light emitting device according to claim 7.

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