JP2017126783A5

JP2017126783A5 -

Info

Publication number: JP2017126783A5
Application number: JP2017075445A
Authority: JP
Filing date: 2017-04-05
Publication date: 2017-10-05
Anticipated expiration: 2032-02-29

Description

本発明の１つの側面は、固体撮像装置に係り、第１面とその反対側の第２面とを有する半導体層と、前記半導体層の前記第１面側に配された第１導電パターン及び第２導電パターンと、前記半導体層を貫通して前記第１導電パターンに接続された第１導電体と、前記半導体層を貫通して前記第２導電パターンに接続された第２導電体と、を備え、前記第１導電体及び前記第２導電体を通り且つ前記第１面に対して垂直な断面において、前記半導体層には、それぞれ、前記半導体層を貫通する、第１の溝、第２の溝、及び第３の溝が設けられ、前記断面において、前記第１の溝は、前記第１導電体と前記第２導電体との間に位置し、前記断面において、前記第１導電体は、前記第２の溝と前記第１の溝の間に位置し、前記断面において、前記第２導電体は、前記第１の溝と前記第３の溝の間に位置し、前記断面において、前記第１導電体は、前記第１の溝側の側面および前記第２の溝側の側面の双方で前記半導体層に直接接触し、且つ、前記第２導電体は、前記第１の溝側の側面および前記第３の溝側の側面の双方で前記半導体層に直接接触していることを特徴とする。 One aspect of the present invention relates to a solid-state imaging device, a semiconductor layer having a first surface and a second surface opposite to the first surface, a first conductive pattern disposed on the first surface side of the semiconductor layer, and A second conductor pattern, a first conductor penetrating the semiconductor layer and connected to the first conductor pattern, a second conductor penetrating the semiconductor layer and connected to the second conductor pattern, Each of the semiconductor layers includes a first groove, a second groove, and a first groove that penetrates the semiconductor layer in a cross section that passes through the first conductor and the second conductor and is perpendicular to the first surface. 2 and a third groove are provided, and in the cross section, the first groove is located between the first conductor and the second conductor, and in the cross section, the first conductive A body is located between the second groove and the first groove, and The conductor is located between the first groove and the third groove. In the cross section, the first conductor is formed on the side surface on the first groove side and the side surface on the second groove side. Both are in direct contact with the semiconductor layer, and the second conductor is in direct contact with the semiconductor layer on both the side surface on the first groove side and the side surface on the third groove side. Features.

Claims

A semiconductor layer having a first surface and a second surface opposite to the first surface;
A first conductive pattern and a second conductive pattern disposed on the first surface side of the semiconductor layer;
A first conductor penetrating the semiconductor layer and connected to the first conductive pattern;
A second conductor penetrating the semiconductor layer and connected to the second conductive pattern;
With
In a cross section that passes through the first conductor and the second conductor and is perpendicular to the first surface, the semiconductor layer includes a first groove and a second groove that penetrate the semiconductor layer, respectively. And a third groove,
In the cross section, the first groove is located between the first conductor and the second conductor,
In the cross section, the first conductor is located between the second groove and the first groove,
In the cross section, the second conductor is located between the first groove and the third groove,
In the cross section, the first conductor is in direct contact with the semiconductor layer on both the side surface on the first groove side and the side surface on the second groove side, and the second conductor is The semiconductor layer is in direct contact with both the side surface on the first groove side and the side surface on the third groove side.
A solid-state imaging device.

In the cross section, a first portion of the semiconductor layer that is in contact with the first conductor, and a second portion of the semiconductor layer that is located on the opposite side of the first conductor with respect to the second groove. Electrically separated,
A third portion of the semiconductor layer that is in contact with the second conductor, and a fourth portion of the semiconductor layer that is opposite to the second conductor with respect to the third groove; The solid-state imaging device according to claim 1, which is electrically separated.

The solid-state imaging device according to claim 1, wherein the semiconductor layer has a photoelectric conversion unit.

4. The solid-state imaging device according to claim 1, further comprising a multilayer wiring layer that is disposed on the first surface side of the semiconductor layer and includes a plurality of metal wiring layers and a plurality of insulating layers.

The solid-state imaging device according to claim 4, wherein the metal wiring layer includes the first conductive pattern and the second conductive pattern.

The solid-state imaging device according to claim 4, wherein the multilayer wiring layer has an insulating layer in contact with a semiconductor layer, and at least one of the first to third grooves reaches the inside of the insulating layer. .

A first semiconductor layer having a first surface and a second surface opposite to the first surface;
A second semiconductor layer disposed on the first surface side of the first semiconductor layer;
A first conductive pattern and a second conductive pattern disposed between the first semiconductor layer and the second semiconductor layer;
A first conductor penetrating the first semiconductor layer and connected to the first conductive pattern;
A second conductor passing through the first semiconductor layer and connected to the second conductive pattern;
With
In a cross section that passes through the first conductor and the second conductor and is perpendicular to the first surface, each of the first semiconductor layers includes a first groove that penetrates the first semiconductor layer, A second groove and a third groove are provided;
In the cross section, the first groove is located between the first conductor and the second conductor,
In the cross section, the first conductor is located between the second groove and the first groove,
In the cross section, the second conductor is located between the first groove and the third groove,
In the cross section, the first conductor is in direct contact with the first semiconductor layer on both the first groove side surface and the second groove side surface, and the second conductor is: Both the first groove side surface and the third groove side surface are in direct contact with the first semiconductor layer.
A solid-state imaging device.

In the cross section, a first portion of the first semiconductor layer that is in contact with the first conductor and a first portion of the first semiconductor layer that is located on a side opposite to the first conductor with respect to the second groove. The two parts are electrically separated,
In the cross section, the third portion of the first semiconductor layer that is in contact with the second conductor and the third groove of the first semiconductor layer are located on the opposite side of the second conductor. The solid-state imaging device according to claim 7, wherein the solid-state imaging device is electrically separated from the fourth portion.

The solid-state imaging device according to claim 7, wherein the first semiconductor layer has a photoelectric conversion unit.

10. The solid according to claim 7, further comprising a first multilayer wiring layer disposed between the first semiconductor layer and the second semiconductor layer and having a plurality of metal wiring layers and a plurality of insulating layers. Imaging device.

The plurality of insulating layers of the first multilayer wiring layer have an insulating layer in contact with the first semiconductor layer;
The solid-state imaging device according to claim 10, wherein at least one of the first to third grooves reaches the inside of the insulating layer.

The solid-state imaging device according to claim 10, further comprising a second multilayer wiring layer that is disposed between the first multilayer wiring layer and the second semiconductor layer and includes a plurality of metal wiring layers and a plurality of insulating layers.

The solid-state imaging device according to claim 12, wherein one of the plurality of metal wirings of the first multilayer wiring layer is in contact with one of the plurality of metal wirings of the second multilayer wiring layer.

14. The solid-state imaging according to claim 13, wherein the one of the plurality of metal wirings of the first multilayer wiring layer and the one of the plurality of metal wirings of the second multilayer wiring layer are in direct contact without a plug. apparatus.

In the cross section including the first multilayer wiring layer and the second multilayer wiring layer, the one end of the plurality of metal wirings of the first multilayer wiring layer and the plurality of metal wirings of the second multilayer wiring layer The solid-state imaging device according to claim 13 or 14, wherein the one end portion of is shifted.

The solid-state imaging device according to claim 12, wherein the plurality of metal wiring layers of the second multilayer wiring layer includes the first conductive pattern and the second conductive pattern.

17. The solid-state imaging device according to claim 7, wherein the second semiconductor layer has a semiconductor region of a transistor, and the first conductive pattern is electrically connected to the transistor.

The solid-state imaging device according to claim 7, wherein the second semiconductor layer includes a semiconductor region of a transistor.

The solid-state imaging device according to claim 1, wherein the first conductor and the second conductor are not electrically connected.

A solid-state imaging device according to any one of claims 1 to 19,
A processing unit for processing a signal output from the solid-state imaging device;
A camera comprising: