JP2017125755A - Method for manufacturing physical quantity sensor, physical quantity sensor, electronic apparatus and mobile body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a physical quantity sensor excellent in sealing property while reducing a thermal history, and a physical quantity sensor, an electronic apparatus and a mobile body.SOLUTION: A method for manufacturing a physical quantity sensor includes steps of: preparing a package 3 having a first accommodation part S1 for accommodating an acceleration sensor element 7, a first through-hole 321 communicating with an outside and an inside of the accommodation part, a second accommodation part S2 for accommodating an angular velocity sensor element 4, and a second through-hole 322 communicating with an outside and an inside of the second accommodation part; disposing first and second sealing materials 331, 332 in the first and second through-holes 321, 322, respectively; heating the package 3 to a temperature higher than a melting point of the first sealing material 331 and lower than a melting point of the second sealing material 332 so as to melt the first sealing material 331 so as to seal the first accommodation part S1; and heating the second sealing material 332 to a temperature higher than its melting point while maintaining the first sealing material 331 to a temperature equal to or lower than the melting point of the second sealing material 332, melting the second sealing material 332, and sealing the second accommodation part S2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a physical quantity sensor manufacturing method, a physical quantity sensor, an electronic device, and a moving object.

  Conventionally, the configuration of Patent Document 1 is known as a composite sensor capable of detecting both angular velocity and acceleration. The composite sensor of Patent Literature 1 includes an angular velocity sensor element and an acceleration sensor element, and a package that accommodates these elements. Since the angular velocity sensor element and the acceleration sensor element are preferably sealed in different atmospheres, the package is partitioned into a first space that accommodates the angular velocity sensor element and a second space that accommodates the acceleration sensor element. . The package is provided with a through hole for making the second space a predetermined atmosphere, and the through hole is sealed with a sealing material after the second space is made a predetermined atmosphere.

  Patent Document 2 discloses a package for housing electronic components. This package has a box-shaped base and a lid that closes the opening of the base, and the base and the lid are joined by a first sealing material. In addition, a recess is formed in the base so as to communicate between the inside and the outside, and the recess is sealed with a second sealing material having a melting point higher than that of the first sealing material. With such a configuration, by gradually heating the package, the first sealing material is first melted and the base and the lid are joined, and then the second sealing material is melted and the inside of the package is melted. Since the space is hermetically sealed, outgas or the like from the first sealing material hardly remains in the space in the package.

JP 2002-5950 A JP 2012-49252 A

  When such a configuration of Patent Literature 2 is combined with the configuration of Patent Literature 1 described above, for example, the following method for manufacturing a composite sensor becomes possible. That is, first, a first through hole connected to the first space for accommodating the angular velocity sensor element and a second through hole connected to the second space for accommodating the acceleration sensor element are provided, and the first through hole having a low melting point is provided. 1 sealing material (sealing material before melting) is disposed, and a second sealing material having a high melting point is disposed in the second through hole. Next, the environment is set to an atmosphere suitable for the first space, and in this state, heating is performed to a temperature not lower than the melting point temperature of the first sealing material and lower than the melting point of the second sealing material. Then, only the first sealing material is melted, and the first space is sealed in a predetermined atmosphere. Next, the environment is set to an atmosphere suitable for the second space, and in this state, heating is performed to a temperature equal to or higher than the melting point of the second sealing material. Then, the second sealing material is melted and the second space is sealed in a predetermined atmosphere.

  However, in such a manufacturing method, since the temperature is further increased in order to melt the second sealing material after the first sealing material is melted, the viscosity of the first sealing material is reduced. There is a possibility that the first sealing material leaks from the through hole and the sealing performance of the first through hole is deteriorated, or the characteristics of the angular velocity sensor element are changed by the leaked first sealing material. Furthermore, there is a possibility that the thermal history becomes large and stress is inherent.

  An object of the present invention is to provide a method of manufacturing a physical quantity sensor, a physical quantity sensor, an electronic device, and a moving body that have excellent sealing properties while reducing thermal history.

Such an object is achieved by the present invention described below.
The physical quantity sensor manufacturing method of the present invention accommodates a first housing part that houses a first physical quantity sensor element, a first through hole that communicates the inside and outside of the first housing part, and a second physical quantity sensor element. Preparing a package having a second housing part and a second through hole communicating between the inside and outside of the second housing part;
Disposing a first sealing material in the first through hole and disposing a second sealing material having a melting point higher than that of the first sealing material in the second through hole;
Under a first atmosphere, the package is heated to a first temperature higher than the melting point of the first sealing material and lower than the melting point of the second sealing material, and the first sealing material is melted to Sealing one housing part in a first atmosphere;
In a second atmosphere, a second temperature higher than the melting point of the second sealing material while maintaining the first sealing material at a temperature not higher than the melting point of the second sealing material. Heating and melting the second sealing material to seal the second housing portion in a second atmosphere.

  According to such a method, after the first sealing material is melted, when the second sealing material is melted, excessive heating of the first sealing material is prevented. It can reduce that a stop property falls. In addition, the thermal history of the package is also reduced, and the inherent (remaining) stress in the package can be reduced.

In the physical quantity sensor manufacturing method of the present invention, it is preferable that heat is locally applied to the second sealing material in the step of melting the second sealing material.
This more reliably reduces excessive heating of the first sealing material and the package.

In the physical quantity sensor manufacturing method of the present invention, in the step of melting the second sealing material, the second sealing material is preferably irradiated with energy rays.
Thereby, a 2nd sealing material can be heated more locally.

  In the physical quantity sensor manufacturing method of the present invention, it is preferable that the step of melting the second sealing material is performed in a state where the package is at the first temperature or lower.

  Thereby, the 2nd sealing material can be heated to as high a temperature as possible, preventing excessive heating of the 1st sealing material. Therefore, the heat applied to the second sealing material in order to melt only the second sealing material can be reduced.

  In the physical quantity sensor manufacturing method of the present invention, it is preferable that the step of melting the second sealing material is performed in a state where the package is at a temperature equal to or lower than the melting point of the first sealing material.

  Thereby, the 2nd sealing material can be melted in the state where the 1st sealing material solidified, and the atmosphere in the 1st accommodating part can be maintained more certainly.

In the physical quantity sensor manufacturing method of the present invention, the package includes a substrate and a lid body having the first through hole and the second through hole,
The substrate and the lid are preferably joined prior to the step of melting the first sealing material.

  Thereby, since a board | substrate and a cover body are joined at an early stage, subsequent handling of a package becomes easy.

In the physical quantity sensor manufacturing method of the present invention, the package includes a substrate and a lid body having the first through hole and the second through hole,
The substrate and the lid are preferably joined in the step of melting the first sealing material.

  Thereby, since joining of a board | substrate and a cover body and fusion | melting of a 1st sealing material can be performed in the same process, it can attain simplification of a manufacturing process and can also reduce a heat history. it can.

In the physical quantity sensor manufacturing method of the present invention, the first physical quantity sensor is an acceleration sensor element,
The second physical quantity sensor is preferably an angular velocity sensor element.

  Thereby, it becomes a composite sensor capable of detecting both angular velocity and acceleration, and a physical quantity sensor excellent in convenience.

  In the physical quantity sensor manufacturing method of the present invention, it is preferable that the second atmosphere is depressurized more than the first atmosphere.

  Accordingly, the first atmosphere can be an atmosphere suitable for driving the acceleration sensor element, and the second atmosphere can be an atmosphere suitable for driving the angular velocity sensor element.

The physical quantity sensor of the present invention includes a first housing portion that houses the first physical quantity sensor element,
A first through hole communicating between the inside and the outside of the first housing portion;
A first sealing material sealing the first through hole;
A second housing portion for housing the second physical quantity sensor element;
A second through hole communicating between the inside and the outside of the second housing portion;
A second sealing material sealing the second through hole, and a package comprising:
The first sealing material and the second sealing material have different melting points.

  According to such a configuration, after the first sealing material is melted and the first through hole is sealed, the second sealing material is locally heated and melted to seal the second through hole. Thus, excessive heating of the first sealing material can be prevented, and reduction in sealing performance of the first housing portion can be reduced. In addition, the thermal history of the package is also reduced, and the inherent (remaining) stress in the package can be reduced.

The electronic device of the present invention includes the physical quantity sensor of the present invention.
As a result, a highly reliable electronic device can be obtained.

The moving body of the present invention has the physical quantity sensor of the present invention.
Thereby, a mobile body with high reliability is obtained.

It is sectional drawing of the physical quantity sensor which concerns on 1st Embodiment of this invention. It is a top view of an acceleration sensor element. It is a top view of an acceleration sensor element. It is a top view of an acceleration sensor element. It is a top view of an angular velocity sensor element. It is a top view of an angular velocity sensor element. It is a top view of an angular velocity sensor element. It is a figure which shows the procedure of the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing explaining the manufacturing method of the physical quantity sensor shown in FIG. It is sectional drawing which shows a physical quantity sensor apparatus. 1 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied. It is a perspective view which shows the motor vehicle to which the mobile body of this invention is applied.

  Hereinafter, a manufacturing method, a physical quantity sensor, an electronic device, and a moving body of a physical quantity sensor of the present invention will be described in detail based on embodiments shown in the accompanying drawings.

<First Embodiment>
FIG. 1 is a cross-sectional view of a physical quantity sensor according to the first embodiment of the present invention. 2 to 4 are plan views of the acceleration sensor element, respectively. 5 to 7 are plan views of the angular velocity sensor element. FIG. 8 is a diagram showing the procedure of the manufacturing method of the physical quantity sensor shown in FIG. 9 to 16 are cross-sectional views illustrating a method for manufacturing the physical quantity sensor shown in FIG. In the following description, three axes orthogonal to each other are referred to as an X axis, a Y axis, and a Z axis. A direction along the X axis is also referred to as an “X axis direction”, a direction along the Y axis direction is also referred to as a “Y axis direction”, and a direction along the Z axis is also referred to as a “Z axis direction”.

[Physical quantity sensor]
A physical quantity sensor 1 shown in FIG. 1 is a composite sensor that can detect angular velocity and acceleration. In particular, the physical quantity sensor 1 of the present embodiment can independently detect the angular velocity ωx around the X axis, the angular velocity ωy around the Y axis, and the angular velocity ωz around the Z axis as the angular velocities, and the acceleration as the X axis This is a so-called “6-axis detection composite sensor” that can independently detect the acceleration Ax in the direction, the acceleration Ay in the Y-axis direction, and the acceleration Az in the Z-axis direction. Such a physical quantity sensor 1 is extremely convenient because it can detect a plurality of physical quantities and has many detection axes.

  The physical quantity sensor 1 includes a package 3 that includes a substrate 31 and a lid 32 bonded to the substrate 31. The package 3 is provided with a first housing part S1 and a second housing part S2 independently, and the first housing part S1 has three acceleration sensor elements (first physical quantity sensor elements) 7, 8, 9 is accommodated, and three angular velocity sensor elements (second physical quantity sensor elements) 4, 5, 6 are accommodated in the second accommodating portion S2.

  In the present embodiment, the substrate 31 is made of a glass material containing alkali metal ions (movable ions) (for example, borosilicate glass such as Pyrex glass (registered trademark)), and the lid 32 is made of silicon. Yes. By constituting the substrate 31 and the lid 32 with such a material, they can be joined by anodic bonding. However, the material of the substrate 31 and the lid body 32 is not limited to this, and the joining method of the substrate 31 and the lid body 32 is not limited to anodic bonding, for example, via a bonding material such as a glass frit or a metal layer. May be joined.

The substrate 31 has a groove (wiring lead-out groove) that communicates the inside and outside of the first and second accommodating portions S1 and S2. This groove is formed by a CVD method using TEOS (tetraethoxysilane). It is blocked by a SiO ₂ film 30 formed of, for example. However, the member for closing the groove is not limited to the SiO ₂ film.

  Further, the ceiling portion of the lid 32 is provided with a first through hole 321 communicating with the inside and outside of the first housing portion S1 and a second through hole 322 communicating with the inside and outside of the second housing portion S2. The first through hole 321 is sealed with a first sealing material 331, and the second through hole 322 is sealed with a second sealing material 332. As will be described later in the manufacturing method, after the first housing portion S1 is set in a desired atmosphere via the first through hole 321, the first through hole 321 is sealed with the first sealing material 331. The atmosphere of the first accommodating portion S1 can be maintained. Similarly, after the second accommodating portion S2 is made to have a desired atmosphere via the second through hole 322, the second through hole 322 is formed by the second sealing material 332. By sealing, the atmosphere of 2nd accommodating part S2 can be maintained.

Further, the first sealing material 331 and the second sealing material 332 are made of different materials, and the melting point T ₃₃₁ of the first sealing material 331 is lower than the melting point T ₃₃₂ of the second sealing material 332. ing. That is, the relationship T ₃₃₁ <T ₃₃₂ is satisfied.

  The first and second sealing materials 331 and 332 are not particularly limited, and commonly used materials such as Au (gold) / Sn (tin) alloy, Au (gold) / Ge ( Various metal materials such as germanium alloy, Au (gold) / Al (aluminum) alloy, and glass materials such as low-melting glass can be used. In general, the melting point of the Au / Sn alloy <the melting point of the Au / Ge alloy <the Au / Al alloy. Therefore, for example, the Au / Sn alloy is used as the first sealing material 331. An alloy may be used, and an Au / Ge alloy may be used as the second sealing material 332. Further, an Au / Sn alloy or an Au / Ge alloy may be used as the first sealing material 331, and an Au / Al alloy may be used as the second sealing material 332.

  Next, the acceleration sensor elements 7, 8, and 9 will be briefly described. In the second accommodating portion S2, three concave portions 37, 38, 39 opened on the upper surface of the substrate 31 are provided side by side in the Y-axis direction, for example, and the acceleration sensor element 7 is disposed on the concave portion 37, The acceleration sensor element 8 is disposed on the recess 38 and the acceleration sensor element 9 is disposed on the recess 39.

  The acceleration sensor element 7 shown in FIG. 2 is a sensor element that detects the acceleration Ax in the X-axis direction. The acceleration sensor element 7 includes a structure 70 having a movable part 71, a spring part 72, a fixed part 73, and fixed detection electrodes 74 and 75. Such a structure 70 is collectively formed by patterning a conductive silicon substrate doped with impurities such as phosphorus and boron by etching (for example, dry etching such as reactive ion etching).

  The movable part 71 includes a base 711 and a plurality of movable detection electrodes 712 that protrude from the base 711 to both sides in the Y-axis direction. One end of the spring portion 72 is connected to both ends of the base portion 711. The other end of the spring part 72 is connected to a fixing part 73, and the fixing part 73 is fixed to the substrate 31. The fixed detection electrodes 74 and 75 are fixed to the substrate 31 and are provided with the movable detection electrode 712 interposed therebetween. Capacitances are formed between the movable detection electrode 712 and the fixed detection electrodes 74 and 75, respectively.

  Grooves 371, 372, and 373 are provided around the recess 37 of the substrate 31, and wirings L71, L72, and L73 are provided in the groove parts 371, 372, and 373, respectively. The wiring L71 is electrically connected to the fixed portion 73 via the conductive bump B71, the wiring L72 is electrically connected to the fixed detection electrode 74 via the conductive bump B72, and the wiring L73 is The fixed detection electrode 75 is electrically connected through the conductive bump B73. In addition, one end portions of the wirings L71, L72, and L73 each serve as a terminal T and are located outside the lid body 32 (see FIG. 1).

  Such an acceleration sensor element 7 can detect the acceleration Ax as follows. When the acceleration Ax is applied to the physical quantity sensor 1, the movable portion 71 is displaced in the X-axis direction while elastically deforming the spring portion 72 based on the magnitude of the acceleration Ax. As the movable portion 71 is displaced, the gap between the movable detection electrode 712 and the fixed detection electrode 74 and the gap between the movable detection electrode 712 and the fixed detection electrode 75 change, and accordingly, the capacitance between them changes. Change. Therefore, the acceleration Ax can be detected based on the change amount of the capacitance.

  The acceleration sensor element 8 shown in FIG. 3 is a sensor element that detects the acceleration Ay in the Y-axis direction. The acceleration sensor element 8 is the same as the acceleration sensor element 7 except that the direction of the acceleration sensor element 7 described above is rotated by 90 °. Therefore, the description of the acceleration sensor element 8 is omitted.

  The acceleration sensor element 9 shown in FIG. 4 is a sensor element that detects an acceleration Az in the Z-axis direction. The acceleration sensor element 9 includes a structure 90 having a movable portion 91, a beam portion 92, and a fixed portion 93. Similar to the structure 70 described above, such a structure 90 is collectively formed by patterning a conductive silicon substrate doped with an impurity such as phosphorus or boron by etching.

  The movable portion 91 is connected to the fixed portion 93 by the beam portion 92, and the fixed portion 93 is fixed to the substrate 31. Such a movable portion 91 swings on a seesaw around a rotation axis J9 formed by the beam portion 92. The movable portion 91 has a movable detection electrode 911 located on one side of the rotation axis J9 and a movable detection electrode 912 located on the other side of the rotation axis J9 in a plan view. 911 and 912 are designed so that the rotational moments when the acceleration Az is applied are different from each other. In addition, a fixed detection electrode 94 that faces the movable detection electrode 911 and a fixed detection electrode 95 that faces the movable detection electrode 912 are provided on the bottom surface of the recess 39. Capacitances are formed between the movable detection electrodes 911 and 912 and the fixed detection electrodes 94 and 95, respectively.

  Grooves 391, 392, 393 are provided around the recess 39 of the substrate 31, and wirings L91, L92, L93 are provided in the groove parts 391, 392, 393. The wiring L91 is electrically connected to the fixed portion 93 via the conductive bump B91, the wiring L92 is electrically connected to the fixed detection electrode 94, and the wiring L93 is electrically connected to the fixed detection electrode 95. Connected. Further, one end portions of the wirings L91, L92, and L93 serve as terminals T and are located outside the lid body 32 (see FIG. 1).

  Such an acceleration sensor element 9 can detect the acceleration Az as follows. When the acceleration Az is applied to the physical quantity sensor 1, the movable portion 91 swings the seesaw around the rotation axis. By such seesaw swinging of the movable portion 91, the gap between the movable detection electrode 911 and the fixed detection electrode 94 and the gap between the movable detection electrode 912 and the fixed detection electrode 95 are changed, and accordingly, the static between them is static. The capacitance changes. Therefore, the acceleration Az can be detected based on the change amount of the capacitance.

The acceleration sensor elements 7, 8, and 9 have been described above. The first accommodating part S1 in which such acceleration sensor elements 7, 8, and 9 are accommodated is filled with an inert gas such as nitrogen, helium, and argon, and is used at a working temperature (about -40 ° C to 80 ° C). It is almost atmospheric pressure (for example, about 2.0 × 10 ^{4 to} 2.0 × 10 ⁵ Pa). By setting the first storage portion S1 to atmospheric pressure, the viscous resistance is increased and the damping effect is exhibited, and the vibrations of the movable portions 71, 81, 91 of the acceleration sensor elements 7, 8, 9 are quickly converged (stopped). be able to. Therefore, the detection accuracy of the accelerations Ax, Ay, Az is improved.

  Next, the angular velocity sensor elements 4, 5, and 6 will be briefly described. In the second accommodating portion S2, three concave portions 34, 35, 36 opened on the upper surface of the substrate 31 are provided side by side in the Y-axis direction, for example, and the angular velocity sensor element 4 is disposed on the concave portion 34, The angular velocity sensor element 5 is disposed on the concave portion 35, and the angular velocity sensor element 6 is disposed on the concave portion 36.

  An angular velocity sensor element 4 shown in FIG. 5 is a sensor element that detects an angular velocity ωx around the X axis. The angular velocity sensor element 4 has two structures 40 (40a, 40b) arranged in the Y-axis direction. Each structure 40 includes a vibrating portion 41, a drive spring portion 42, a fixed portion 43, a movable drive electrode 44, fixed drive electrodes 45 and 46, a detection flap plate 47, and a beam portion 48. doing. Such a structure 40 is collectively formed by patterning a conductive silicon substrate doped with impurities such as phosphorus and boron by etching.

  The vibration part 41 is a rectangular frame, and one end part of the drive spring part 42 is connected to four corners thereof. The other end of the drive spring portion 42 is connected to the fixing portion 43, and the fixing portion 43 is fixed to the substrate 31. The movable drive electrode 44 is provided on the vibration part 41. On the other hand, the fixed drive electrodes 45 and 46 are fixed to the substrate 31 and are provided with the movable drive electrode 44 interposed therebetween.

  The detection flap plate 47 is disposed inside the vibration part 41 and is connected to the vibration part 41 by a beam part 48. The detection flap plate 47 can be rotated (tilted) around a rotation axis formed by the beam portion 48. A fixed detection electrode 49 is provided on the bottom surface of the recess 34 so as to face the detection flap plate 47, and a capacitance is formed between the detection flap plate 47 and the fixed detection electrode 49. .

  Grooves 341, 342, 343, 344, and 345 are provided around the recess 34 of the substrate 31, and wirings L41, L42, L43, L44, and L45 are provided in the groove parts 341, 342, 343, 344, and 345, respectively. It has been. The wiring L41 is electrically connected to the fixed portion 43 via the conductive bump B41, the wiring L42 is electrically connected to the fixed drive electrode 45 via the conductive bump B42, and the wiring L43 is Are electrically connected to the fixed drive electrode 46 via the conductive bump B43, the wiring L44 is electrically connected to the fixed detection electrode 49 of the structure 40a, and the wiring L45 is connected to the structure 40b. The fixed detection electrode 49 is electrically connected. Further, one end portions of the wirings L41, L42, L43, L44, and L45 serve as terminals T and are located outside the lid body 32.

  The angular velocity sensor element 4 as described above can detect the angular velocity ωx as follows. First, a drive voltage is applied between the movable drive electrode 44 and the fixed drive electrodes 45 and 46, and the two vibrating parts 41 are vibrated in mutually opposite phases in the Y-axis direction. In this state, when the angular velocity ωx is applied to the physical quantity sensor 1, Coriolis force is applied, and the two detection flap plates 47 are displaced around the rotation axis J4 in mutually opposite phases. By the displacement of the detection flap plate 47, the gap between the detection flap plate 47 and the fixed detection electrode 49 changes, and the capacitance between them changes accordingly. Therefore, the angular velocity ωx can be detected based on the change amount of the capacitance.

  An angular velocity sensor element 5 shown in FIG. 6 is a sensor element that detects an angular velocity ωy about the Y axis. The angular velocity sensor element 5 is the same as the angular velocity sensor element 4 except that the direction of the angular velocity sensor element 4 is rotated by 90 ° (that is, the structures 50a and 50b are arranged in the X-axis direction). is there. Therefore, the description of the angular velocity sensor element 5 is omitted.

  An angular velocity sensor element 6 shown in FIG. 7 is a sensor element that detects an angular velocity ωz around the Z axis. The angular velocity sensor element 6 has two structures 60 (60a, 60b) arranged in the X-axis direction. The structure 60 includes a vibrating part 61, a movable part 62, a detection spring part 63, a drive spring part 64, a fixed part 65, a movable drive electrode 66, fixed drive electrodes 671 and 672, and a fixed detection electrode 681. , 682. Such a structure 60 is formed in a lump by patterning a conductive silicon substrate doped with impurities such as phosphorus and boron by etching.

  The vibration part 61 is a rectangular frame, and one end of the drive spring part 64 is connected to the four corners thereof. The other end of the drive spring part 64 is connected to a fixed part 65, and the fixed part 65 is fixed to the substrate 31. The movable drive electrode 66 is provided in the vibration part 61. The fixed drive electrodes 671 and 672 are fixed to the substrate 31 and are provided with the movable drive electrode 66 interposed therebetween.

  The movable part 62 is disposed inside the vibration part 61 and is connected to the vibration part 61 by a detection spring part 63. The movable portion 62 includes a base portion 621 having a rectangular frame shape, and a movable detection electrode 622 that is disposed inside the base portion 621 and extends in the X-axis direction. The fixed detection electrodes 681 and 682 are fixed to the substrate 31 and are provided with the movable detection electrode 622 interposed therebetween. Capacitances are formed between the movable detection electrode 622 and the fixed detection electrode 681 and between the movable detection electrode 622 and the fixed detection electrode 682, respectively.

  Grooves 361, 362, 363, 364, 365 are provided around the recess 36 of the substrate 31, and wirings L61, L62, L63, L64, L65 are provided in the groove parts 361, 362, 363, 364, 365. It has been. The wiring L61 is electrically connected to the fixed portion 65 via the conductive bump B61, the wiring L62 is electrically connected to the fixed drive electrode 671 via the conductive bump B62, and the wiring L63 is , Electrically connected to the fixed drive electrode 672 via the conductive bump B63, the wiring L64 is electrically connected to the fixed detection electrode 681 via a conductive bump (not shown), and the wiring L65 is It is electrically connected to the fixed detection electrode 682 via a conductive bump (not shown). Further, one ends of the wirings L61, L62, L63, L64, and L65 serve as terminals T and are located outside the lid body 32 (see FIG. 1).

  The angular velocity sensor element 6 as described above can detect the angular velocity ωz as follows. First, a drive voltage is applied between the movable drive electrode 66 and the fixed drive electrodes 671 and 672, and the two springs 61 are vibrated in opposite phases in the X-axis direction while elastically deforming the drive spring part 64. When an angular velocity ωz is applied to the physical quantity sensor 1 in this state, Coriolis force is applied, and the two movable parts 62 vibrate in the opposite phase in the Y-axis direction while elastically deforming the detection spring part 63. As the movable part 62 vibrates, the gap between the movable detection electrode 622 and the fixed detection electrode 681 and the gap between the movable detection electrode 622 and the fixed detection electrode 682 change, and the capacitance between them changes accordingly. To do. Therefore, the angular velocity ωz can be detected based on the amount of change in capacitance.

  The angular velocity sensor elements 4, 5, and 6 have been described above. The second housing portion S2 in which such angular velocity sensor elements 4, 5, and 6 are housed is in a reduced pressure state (for example, about 0.01 to 10 Pa). Thereby, viscosity resistance decreases and the vibration parts 41, 51, 61 of the angular velocity sensor elements 4, 5, 6 can be vibrated efficiently and stably. Therefore, the detection accuracy of the angular velocities ωx, ωy, and ωz is improved.

[Method for Manufacturing Physical Quantity Sensor 1]
Next, a method for manufacturing the physical quantity sensor 1 will be described in detail with reference to FIGS. As shown in FIG. 8, the manufacturing method of the physical quantity sensor 1 includes a first housing part S1 that houses the acceleration sensor elements 7, 8, and 9, a first through hole 321 that communicates the inside and outside of the first housing part S1, A package preparation step of preparing a package 3 having a second housing portion S2 for housing the angular velocity sensor elements 4, 5, 6 and a second through hole 322 communicating with the inside and the outside of the second housing portion S2, and a first penetration In the sealing material arranging step of arranging the first sealing material 331 in the hole 321 and arranging the second sealing material 332 in the second through-hole 322, and in the first atmosphere, the first and second sealing materials 331 are arranged. 332 is heated to a first temperature that is higher than the melting point T ₃₃₁ of the first sealing material 331 and lower than the melting point T ₃₃₂ of the second sealing material 332, and melts the first sealing material 331 to form the first housing part. A first container sealing step of sealing S1 in a first atmosphere; and a second atmosphere In, while maintaining the first sealing member 331 to the second melting point _{T 332} below the temperature of the sealing material, and heating the second sealing member 332 to a second temperature higher than the melting point _{T 332,} a second sealing A second housing portion sealing step for melting the stopper 332 and sealing the second housing portion S2 in the second atmosphere. Hereinafter, each of these steps will be described in detail.

(Package preparation process)
First, as shown in FIG. 9, a substrate 31 is prepared. The substrate 31 is obtained by forming a recess and a groove on the upper surface of a glass substrate using a photolithography technique and an etching technique, and then arranging electrodes and wirings at necessary locations. The electrodes and wirings can be obtained, for example, by forming a metal film on the substrate 31 and patterning the metal film using a photolithography technique and an etching technique.

  Next, as shown in FIG. 10, the silicon substrate S that is the base material of the sensor elements 4 to 9 is bonded to the upper surface of the substrate 31 by anodic bonding. However, the method for bonding the substrate 31 and the silicon substrate S is not limited to anodic bonding.

  Next, if necessary, the silicon substrate S is thinned by CMP (chemical mechanical polishing) or the like, and further, impurities such as phosphorus and boron are doped into the silicon substrate S to impart conductivity to the silicon substrate S. Next, by patterning the silicon substrate S by etching (preferably dry etching such as reactive ion etching), sensor elements 4 to 9 are obtained as shown in FIG.

Next, the lid 32 is prepared. Such a lid 32 is obtained, for example, by patterning (forming irregularities) a silicon substrate using a photolithography technique and an etching technique. Then, as shown in FIG. 12, the lid body 32 is abutted against the substrate 31, and these are anodically bonded by applying voltage and heat, and further, a gap (groove portion) between the substrate 31 and the lid body 32 by the SiO ₂ film 30. ). Thereby, the package 3 is obtained. Thus, in this process, since the board | substrate 31 and the cover body 32 are joined, since these shift | offset | difference does not generate | occur | produce in a subsequent process, handling becomes easy.

  However, the bonding method of the substrate 31 and the lid 32 is not limited to anodic bonding, and may be bonded via a bonding material such as a glass frit or a metal layer, or may be bonded to each other by plasma irradiation or the like. Activated bonding may be used in which bonding is performed by activating.

(Encapsulant placement process)
Next, a first sealing member 331, a second sealing member 332 having a melting point _{T 332} than the melting point _{T 331} of the first sealing member 331, was prepared, as shown in FIG. 13, the first The first sealing material 331 is disposed in the through hole 321, and the second sealing material 332 is disposed in the second through hole 322. In this state, the first and second sealing materials 331 and 332 each have a ball shape, and the first and second through holes 321 and 322 and the first and second sealing materials 331 and 332 are formed. A gap is formed between the two.

As described above, the first and second sealing materials 331 and 332 are not particularly limited as long as the relationship of T ₃₃₁ <T ₃₃₂ is satisfied, but in the present embodiment, the first sealing material 331 includes An Au / Sn alloy sealing material (melting point: about 280 ° C.) is used, and an Au / Ge alloy sealing material (melting point: about 360 ° C.) is used as the second sealing material 332. Moreover, although it does not specifically limit as temperature difference of melting _| fusing point _T331 , _T332 , For example, it is preferable that they are about 50 degreeC or more and 200 degrees C or less, and it is more preferable that they are about 60 degreeC or more and 100 degrees C or less.

(First container sealing step)
Next, the package 3 is placed in the chamber C as shown in FIG. A stage-shaped heater H is provided in the chamber C, and the package 3 can be heated by disposing the package 3 in this heater shape. Then, while maintaining the package 3 at about 25 ° C. with the heater H, the inside of the chamber C is evacuated, and then dry N ₂ is introduced, and the internal pressure of the chamber C is set to 1.0 × 10 ⁵ Pa (first atmosphere). To do. As described above, since gaps are formed between the first and second through holes 321 and 322 and the first and second sealing materials 331 and 332, the first and second accommodating portions S1 and S2 are formed. The atmosphere is the same as that in the chamber C.

Next, the package 3 (first and second sealing materials 331 and 332) is heated by the heater H to about 290 ° C. (that is, a temperature not lower than the melting point T ₃₃₁ and lower than the melting point T _332, the first temperature). Then, as shown in FIG. 15, only the 1st sealing material 331 fuse | melts among the 1st, 2nd sealing materials 331 and 332, and 1st accommodating part S1 is sealed by 1st atmosphere. As described above, the melting point _{T 331} of the first sealing member 331 temperature difference ΔT between the melting point _{T 332} of the second sealing member 332 is about 80 ° C.. Therefore, it is possible to secure a sufficiently wide temperature range in which only the first sealing material 331 can be melted without melting the second sealing material 332, so that this process can be performed more reliably and easily. Can do.

In addition, in the state heated to 290 degreeC, although the internal pressure of 1st accommodating part S1 is rising to about 1.9x10 < ⁵ > Pa, the internal pressure of 1st accommodating part S1 is lowered | hung to 25 degreeC, It will return to the original 1.0 × 10 ⁵ Pa. Further, although depending on the material of the first sealing material 331 and the size of the first through-hole 321, it is preferable that the package 3 is not heated to a temperature higher than the melting point T ₃₃₁ by 50 ° C. or higher in this step. As a result, the viscosity of the first sealing material 331 can be prevented from excessively decreasing. For example, the melted first sealing material 331 hangs down from the first through hole 321 and adheres to the acceleration sensor elements 7, 8, 9. Can be reduced.

(Second container sealing step)
Next, while maintaining the temperature of the package 3 at about 290 ° C. (that is, the heating temperature in the first container sealing step), the inside of the chamber C is gradually depressurized to about 2.0 Pa (second atmosphere). And Next, as shown in FIG. 16, the second sealing material 332 is irradiated with a laser L as an energy ray to heat the second sealing material 332 to a temperature (second temperature) higher than its melting point T _332. . Then, the second sealing material 332 is melted, and the second storage portion S2 is sealed in the second atmosphere. As described above, the temperature difference ΔT between the melting point T ₃₃₁ and the melting point T ₃₃₂ is about 80 ° C. Therefore, in order to melt the second sealing material 332, the heat that must be additionally applied to the second sealing material 332 can be kept relatively small (70 ° C. in this embodiment), and the second sealing material 332 can be melted more easily. In addition, in the state heated to 290 degreeC, although the internal pressure of 2nd accommodating part S2 is 2.0 Pa, the internal pressure of 2nd accommodating part S2 falls to about 1.0 Pa by temperature-falling to 25 degreeC. .

Thus, in this step, the second sealing material 332 is locally heated by irradiating the laser L. Therefore, while maintaining the 1st sealing material 331 and the package 3 at 290 degreeC (temperature below melting _| fusing point _T332 ), only the 2nd sealing material 332 is heated to temperature higher than the melting _| fusing point T332. Can do. As a result, the following effects can be exhibited. First, since excessive heating of the first sealing material 331 is prevented, a decrease in the viscosity of the first sealing material 331 is reduced (that is, the airtightness of the first housing portion S1 can be maintained). The viscosity can be maintained), and the deterioration of the sealing performance of the first housing part S1 during the second housing part sealing step can be reduced. Further, if the decrease in the viscosity of the first sealing material 331 is reduced, the first sealing material 331 is unlikely to sag from the first through hole 321, and accordingly, the first sealing material 331 is the acceleration sensor element 7, 8, 9 and difficult to adhere to the wiring. Therefore, failure of the acceleration sensor elements 7, 8, 9 and deterioration of acceleration detection characteristics can be reduced. Secondly, it is possible to reduce the thermal history of the package 3, and to reduce the inherent (remaining) stress in the package 3.

In particular, in this embodiment, since the second sealing material 332 is heated by irradiating the laser L, the second sealing material 332 can be easily heated locally. However, the method of heating the second sealing material 332 is not limited to the method of irradiating the laser L as long as heat can be locally applied to the second sealing material 332. For example, a method may be used in which the tip of a pin having high thermal conductivity is brought into contact with the second sealing material 332 and heat is applied to the second sealing material 332 through the pin. Further, for example, a method of increasing the temperature in the chamber C to the melting point T ₃₃₂ or more while cooling the first sealing material 331 may be used.

Moreover, in this embodiment, this process is performed in the state which maintained the package 3 at the heating temperature (290 degreeC) in a 1st accommodating part sealing process. Therefore, in order to melt the second sealing material 332, the heat applied to the second sealing material 332 by laser irradiation can be made relatively small, and the second sealing material 332 can be easily melted. . However, this step may be performed in a state where the package 3 is kept at a heating temperature (290 ° C.) or lower in the first housing portion sealing step. In particular, by performing the package 3 in a state where the temperature is lower than the melting point T _{331 of} the first sealing material 331, the first sealing material 331 is solidified and high sealing performance of the first housing portion S1 is ensured. This step can be performed in a state.

  Finally, by returning the temperature of the package 3 to room temperature, the first and second sealing materials 331 and 332 are solidified, and the physical quantity sensor 1 is obtained.

  The method for manufacturing the physical quantity sensor 1 has been described above. According to such a manufacturing method, the physical quantity sensor 1 excellent in sealing performance (particularly the sealing performance of the first housing portion S1) can be obtained while reducing the thermal history.

  In particular, in the present embodiment, a first sealing material 331 having a low melting point is used for sealing the first housing portion S1 in which the acceleration sensor elements 7, 8, and 9 are housed, and the first housing portion S1 is first used. The second housing part S2 having a high melting point is used for sealing the second housing part S2 in which the angular velocity sensor elements 4, 5, and 6 are housed, and this second housing part S2 is later sealed. Yes. Therefore, the second storage unit S2 can be kept in communication with the chamber C for a longer time, and accordingly, moisture and the like in the second storage unit S2 can be more sufficiently removed. Since the angular velocity sensor elements 4, 5, and 6 are elements that drive and vibrate as described above, the characteristics thereof are more sensitive to the atmosphere than the acceleration sensor elements 7, 8, and 9. Therefore, it is possible to reduce the deterioration of the characteristics of the angular velocity sensor elements 4, 5, 6 by sufficiently removing moisture and the like in the second storage unit S <b> 2.

Second Embodiment
17 and 18 are cross-sectional views illustrating a method for manufacturing the physical quantity sensor shown in FIG.

  Hereinafter, the manufacturing method of the physical quantity sensor of the second embodiment will be described focusing on the differences from the above-described embodiment, and the description of the same matters will be omitted.

  The manufacturing method of the physical quantity sensor according to the second embodiment of the present invention is the same as that of the first embodiment described above except that the process of joining the substrate and the lid is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

[Method for Manufacturing Physical Quantity Sensor 1]
The manufacturing method of the physical quantity sensor 1 of the present embodiment is also similar to the first embodiment described above in the package preparation process, the sealing material arrangement process, the first housing part sealing process, and the second housing part sealing process. And.

(Package preparation process)
First, as in the first embodiment described above, as shown in FIG. 17, the sensor elements 4 to 9 are formed on the substrate 31, and the lid body 32 is disposed on the substrate 31. However, in this state, the substrate 31 and the lid body 32 are not joined.

(Encapsulant placement process)
Next, after the first sealing material 331 is disposed in the first through-hole 321 and the second sealing material 332 is disposed in the second through-hole 322, the stacked body 300 of the substrate 31 and the lid body 32 is placed in the chamber C. Place inside (on heater H). And while maintaining the laminated body 300 at about 25 ° C. with the heater H, the inside of the chamber C is evacuated, and then dry N ₂ is introduced, and the internal pressure of the chamber C is set to 1.0 × 10 ⁵ Pa (first atmosphere). And

Next, by applying a voltage while heating the laminated body 300 with the heater H, the substrate 31 and the lid body 32 are anodically bonded, and further, the gap (groove portion) between the substrate 31 and the lid body 32 by the SiO ₂ film 30. ). Thereby, as shown in FIG. 18, the package 3 is obtained. In this step, the stacked body 300 is not heated to the melting point _T331 or higher, but is heated to about 270 ° C., for example. Thereby, melting of the first sealing material 331 during this step can be prevented, and heat necessary for anodic bonding can be sufficiently applied to the stacked body 300.

(1st accommodating part sealing process, 2nd accommodating part sealing process)
The 1st accommodating part sealing process and the 2nd accommodating part sealing process are the same as that of 1st Embodiment mentioned above.

  According to such a manufacturing method of the physical quantity sensor 1, since the heater H can be used also as a heating means at the time of anodic bonding, the manufacturing process can be simplified. Further, since the substrate 31 and the lid body 32 are anodically bonded in a state in which the first atmosphere for the first accommodating part S1 is set in advance, the first accommodating part sealing step is promptly performed after finishing the anodic bonding. Can be migrated to. In particular, since the package 3 is heated to 270 ° C. for anodic bonding, the first housing is also provided in that the package 3 can be easily heated to 290 ° C. in order to melt the first sealing material 331. It can be said that the transition to the partial sealing process is easy.

  According to the second embodiment as described above, the same effect as that of the first embodiment described above can be exhibited.

<Third Embodiment>
19 to 21 are cross-sectional views illustrating a method for manufacturing the physical quantity sensor shown in FIG.

  Hereinafter, the manufacturing method of the physical quantity sensor of the third embodiment will be described focusing on the differences from the above-described embodiment, and the description of the same matters will be omitted.

  The manufacturing method of the physical quantity sensor according to the third embodiment of the present invention is the same as that of the first embodiment described above, except that the bonding of the substrate and the lid and the melting of the first sealing material are performed simultaneously. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

[Method for Manufacturing Physical Quantity Sensor 1]
The manufacturing method of the physical quantity sensor 1 of the present embodiment is also similar to the first embodiment described above in the package preparation process, the sealing material arrangement process, the first housing part sealing process, and the second housing part sealing process. And.

(Package preparation process)
First, as in the first embodiment described above, as shown in FIG. 19, the sensor elements 4 to 9 are formed on the substrate 31, and the lid body 32 is disposed on the substrate 31. However, in this state, the substrate 31 and the lid body 32 are not joined.

(Encapsulant placement process)
Next, after the first sealing material 331 is disposed in the first through-hole 321 and the second sealing material 332 is disposed in the second through-hole 322, the stacked body 300 of the substrate 31 and the lid body 32 is placed in the chamber C. Place inside (on heater H). And while maintaining the laminated body 300 at about 25 ° C. with the heater H, the inside of the chamber C is evacuated, and then dry N ₂ is introduced, and the internal pressure of the chamber C is set to 1.0 × 10 ⁵ Pa (first atmosphere). And

(First container sealing step)
Next, the laminated body 300 is heated to 290 ° C. (that is, a temperature not lower than the melting point T ₃₃₁ and lower than the melting point T ₃₃₂ ) with the heater H, and the first sealing material 331 is melted as shown in FIG. The through hole 321 is closed. Next, a voltage is applied to the laminate 300 while maintaining this temperature, and the substrate 31 and the lid 32 are anodically bonded. Further, the gap (groove portion) between the substrate 31 and the lid 32 is closed by the SiO ₂ film 30. Thereby, as shown in FIG. 21, the package 3 is obtained and the first housing portion S1 is sealed.

(Second container sealing step)
The second housing portion sealing step is the same as in the first embodiment described above.

  According to such a manufacturing method of the physical quantity sensor 1, since the bonding of the substrate 31 and the lid body 32 and the melting of the first sealing material 331 can be performed simultaneously (in the same process), the manufacturing process is simplified. Can be achieved. In addition, the heat history applied to the package 3 can be reduced.

  According to the third embodiment as described above, the same effects as those of the first embodiment described above can be exhibited.

[Physical quantity sensor device]
Next, a physical quantity sensor device including the physical quantity sensor of the present invention will be described.

FIG. 22 is a cross-sectional view showing the physical quantity sensor device.
The physical quantity sensor device 100 shown in FIG. 22 includes a substrate 101, a physical quantity sensor 1 fixed to the substrate 101 via an adhesive layer 103, and an IC chip (electronic) fixed to the physical quantity sensor 1 via an adhesive layer 104. Component) 102. The physical quantity sensor 1 and the IC chip 102 are molded with the molding material M. As the adhesive layers 103 and 104, for example, solder, silver paste, a resin adhesive (die attach agent), or the like can be used. Further, as the molding material M, for example, a thermosetting epoxy resin can be used, and for example, it can be molded by a transfer molding method.

  A plurality of terminals 101a are disposed on the upper surface of the substrate 101, and a plurality of mounting terminals 101b connected to the terminals 101a via internal wiring (not shown) are disposed on the lower surface. The substrate 101 is not particularly limited, and for example, a silicon substrate, a ceramic substrate, a resin substrate, a glass substrate, a glass epoxy substrate, or the like can be used.

  Further, the IC chip 102 includes, for example, a drive circuit that drives the physical quantity sensor 1, a detection circuit that detects acceleration and angular velocity based on a signal from the physical quantity sensor 1, and a signal from the detection circuit that is converted into a predetermined signal. The output circuit etc. which output in this way are included. Such an IC chip 102 is electrically connected to the terminal T of the physical quantity sensor 1 through the bonding wire 105, and is electrically connected to the terminal 101 a of the substrate 101 through the bonding wire 106.

  Such a physical quantity sensor device 100 includes the physical quantity sensor 1 and thus has excellent reliability.

[Electronics]
Next, an electronic device including the physical quantity sensor of the present invention will be described.

  FIG. 23 is a perspective view showing the configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.

  In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 1108. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably. Such a personal computer 1100 incorporates a physical quantity sensor 1.

  FIG. 24 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the invention is applied.

  In this figure, a cellular phone 1200 includes an antenna (not shown), a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and a display unit 1208 is provided between the operation buttons 1202 and the earpiece 1204. Has been placed. Such a cellular phone 1200 incorporates a physical quantity sensor 1.

  FIG. 25 is a perspective view showing a configuration of a digital still camera to which the electronic apparatus of the present invention is applied.

  A display unit 1310 is provided on the back surface of the case 1302 in the digital still camera 1300, and is configured to display based on an image pickup signal by the CCD. The display unit 1310 functions as a finder that displays an object as an electronic image. . A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302. When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308. Such a digital still camera 1300 incorporates, for example, a physical quantity sensor 1 used for camera shake correction.

  Since such an electronic apparatus includes the physical quantity sensor 1, it has excellent reliability.

  In addition to the personal computer of FIG. 23, the mobile phone of FIG. 24, and the digital still camera of FIG. 25, the electronic device of the present invention includes, for example, a smartphone, a tablet terminal, a watch (including a smart watch), an inkjet discharge Wearable terminals such as devices (for example, inkjet printers), HMDs (head-mounted displays), laptop personal computers, televisions, video cameras, video tape recorders, car navigation devices, pagers, electronic notebooks (including those with communication functions), electronic Dictionary, calculator, electronic game device, word processor, workstation, video phone, crime prevention TV monitor, electronic binoculars, POS terminal, medical device (eg electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, Daughter endoscope), a fish finder, various measurement devices, gauges (e.g., gages for vehicles, aircraft, and ships), a base station for mobile devices, can be applied to a flight simulator or the like.

[Moving object]
Next, the moving body of the present invention will be described.
FIG. 26 is a perspective view showing an automobile to which the moving body of the present invention is applied.

  The automobile 1500 has a built-in physical quantity sensor 1. For example, the physical quantity sensor 1 can detect the posture of the vehicle body 1501. The detection signal of the physical quantity sensor 1 is supplied to the vehicle body posture control device 1502, and the vehicle body posture control device 1502 detects the posture of the vehicle body 1501 based on the signal, and controls the stiffness of the suspension according to the detection result. The brakes of the individual wheels 1503 can be controlled.

  In addition, such posture control can be used by a biped robot or a radio controlled helicopter (including a drone). As described above, the physical quantity sensor 1 is incorporated in realizing the posture control of various moving objects.

  The physical quantity sensor manufacturing method, physical quantity sensor, electronic device, and moving body of the present invention have been described based on the illustrated embodiment, but the present invention is not limited to this, and the configuration of each part is the same. Any structure having a function can be substituted. In addition, any other component may be added to the present invention.

  In the above-described embodiment, the configuration in which three acceleration sensor elements and three angular velocity sensor elements are provided has been described. However, the configuration of the physical quantity sensor is not limited to this, and includes at least one acceleration sensor; It is sufficient that at least one angular velocity sensor is provided.

  In the above-described embodiment, the configuration in which the first physical quantity sensor element is an acceleration sensor element and the second physical quantity sensor element is an angular velocity sensor element has been described. However, the configuration of the physical quantity sensor is not limited thereto, For example, the first physical quantity sensor element may be an angular velocity sensor element and the second physical quantity sensor element may be an acceleration sensor element, or at least one of the first and second physical quantity sensor elements may be an acceleration sensor element and It may be a physical quantity sensor element (for example, an atmospheric pressure sensor element) other than the angular velocity sensor element.

1 ... physical quantity sensor, 3 ... package, 30 ... SiO ₂ film, 300 ... layered body, 31 ... substrate, 32 ... lid, 321 ... first through hole, 322 ... second through hole, 331 ... first sealing member 332 ... second sealing material, 34, 35, 36, 37, 38, 39 ... recess, 341, 342, 343, 344, 345, 361, 362, 363, 364, 365, 371, 372, 373, 391 , 392, 393 ... groove, 4 ... angular velocity sensor element, 40, 40a, 40b ... structure, 41 ... vibrating part, 42 ... drive spring part, 43 ... fixed part, 44 ... movable drive electrode, 45, 46 ... fixed drive Electrode 47 ... detection flap plate, 48 ... beam portion, 49 ... fixed detection electrode, 5 ... angular velocity sensor element, 50a, 50b ... structure, 6 ... angular velocity sensor element, 60, 60a, 60b ... structure, 61 ... Vibration part , 62 ... movable part, 621 ... base part, 622 ... movable detection electrode, 63 ... detection spring part, 64 ... drive spring part, 65 ... fixed part, 66 ... movable drive electrode, 671, 672 ... fixed drive electrode, 681, 682 DESCRIPTION OF SYMBOLS ... Fixed detection electrode, 7 ... Acceleration sensor element, 70 ... Structure, 71 ... Movable part, 711 ... Base part, 712 ... Movable detection electrode, 72 ... Spring part, 73 ... Fixed part, 74, 75 ... Fixed detection electrode, 8 DESCRIPTION OF SYMBOLS ... Acceleration sensor element, 9 ... Acceleration sensor element, 90 ... Structure, 91 ... Movable part, 911 ... Movable detection electrode, 912 ... Movable detection electrode, 92 ... Beam part, 93 ... Fixed part, 94, 95 ... Fixed detection electrode DESCRIPTION OF SYMBOLS 100 ... Physical quantity sensor apparatus 101 ... Board | substrate 101a ... Terminal 101b ... Mounting terminal 102 ... IC chip 103, 104 ... Adhesive layer, 105, 106 ... Bonding wire, 1100 ... -Sonar computer 1102 ... Keyboard 1104 ... Main unit 1106 ... Display unit 1108 ... Display unit 1200 ... Mobile phone 1202 ... Operation button 1204 ... Earpiece 1206 ... Mouthpiece 1208 ... Display unit 1300 ... Digital still camera, 1302 ... Case, 1304 ... Light receiving unit, 1306 ... Shutter button, 1308 ... Memory, 1310 ... Display section, 1500 ... Automobile, 1501 ... Car body, 1502 ... Car body posture control device, 1503 ... Wheel, Ax, Ay , Az ... acceleration, B41, B42, B43, B61, B62, B63, B71, B72, B73, B91 ... conductive bumps, C ... chamber, H ... heater, J4, J9 ... rotating shaft, L41, L42, L43 , L44, L45, L61, L62, L63, L64 L65, L71, L72, L73, L91, L92, L93 ... wiring, L ... laser, M ... mold material, S ... silicon substrate, S1 ... first housing portion, S2 ... second housing portion, T ... terminal, ωx, ωy, ωz ... angular velocity

Claims (12)

A first housing portion that houses the first physical quantity sensor element; a first through hole that communicates the inside and outside of the first housing portion; a second housing portion that houses the second physical quantity sensor element; and the second housing. Preparing a package having a second through-hole communicating with the inside and outside of the part;
Disposing a first sealing material in the first through hole and disposing a second sealing material having a melting point higher than that of the first sealing material in the second through hole;
Under a first atmosphere, the package is heated to a first temperature higher than the melting point of the first sealing material and lower than the melting point of the second sealing material, and the first sealing material is melted to Sealing one housing part in a first atmosphere;
In a second atmosphere, a second temperature higher than the melting point of the second sealing material while maintaining the first sealing material at a temperature not higher than the melting point of the second sealing material. And a step of melting the second sealing material to seal the second housing portion in a second atmosphere.   The method of manufacturing a physical quantity sensor according to claim 1, wherein in the step of melting the second sealing material, heat is locally applied to the second sealing material.   The method of manufacturing a physical quantity sensor according to claim 1, wherein in the step of melting the second sealing material, the second sealing material is irradiated with energy rays.   The method of manufacturing a physical quantity sensor according to any one of claims 1 to 3, wherein the step of melting the second sealing material is performed in a state where the package is set to the first temperature or lower.   The method of manufacturing a physical quantity sensor according to claim 4, wherein the step of melting the second sealing material is performed in a state where the package is set to a temperature equal to or lower than the melting point of the first sealing material. The package includes a substrate and a lid body having the first through hole and the second through hole,
The physical quantity sensor manufacturing method according to any one of claims 1 to 5, wherein the substrate and the lid are joined prior to the step of melting the first sealing material. The package includes a substrate and a lid body having the first through hole and the second through hole,
The method of manufacturing a physical quantity sensor according to claim 1, wherein the substrate and the lid are joined in a step of melting the first sealing material. The first physical quantity sensor is an acceleration sensor element;
The method of manufacturing a physical quantity sensor according to claim 1, wherein the second physical quantity sensor is an angular velocity sensor element.   The physical quantity sensor manufacturing method according to claim 8, wherein the second atmosphere is depressurized more than the first atmosphere. A first housing part for housing the first physical quantity sensor element;
A first through hole communicating between the inside and the outside of the first housing portion;
A first sealing material sealing the first through hole;
A second housing portion for housing the second physical quantity sensor element;
A second through hole communicating between the inside and the outside of the second housing portion;
A second sealing material sealing the second through hole, and a package comprising:
The physical quantity sensor, wherein the first sealing material and the second sealing material have different melting points.   An electronic apparatus comprising the physical quantity sensor according to claim 10.   A moving body comprising the physical quantity sensor according to claim 10.

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