JP2017112128A - Method of manufacturing semiconductor light-emitting device and method of manufacturing phosphor sheet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device which achieves a reduction in the difference between the linear expansion coefficient of a phosphor sheet and the linear expansion coefficient of a substrate material, and a method of manufacturing a phosphor sheet.SOLUTION: The method of manufacturing a semiconductor light-emitting device 100 comprises: a first heat treatment step of curing a silicone resin containing a phosphor by heat treatment at a first temperature to mold it into a silicone sheet; a second heat treatment step of further curing the silicone sheet by heat treatment at a second temperature higher than the first temperature to mold it into a phosphor sheet 150; and a phosphor sheet sticking step of sticking the phosphor sheet 150 to a semiconductor light-emitting element 110.SELECTED DRAWING: Figure 1

Description

  The technical field of the present specification relates to a method for manufacturing a semiconductor light emitting device and a method for manufacturing a phosphor sheet.

  Some semiconductor light emitting devices convert the emitted light from the semiconductor light emitting element with a phosphor. For such semiconductor light emitting devices, many techniques have been developed for attaching a phosphor-containing sheet to a semiconductor light emitting element.

  For example, Patent Document 1 discloses a technique using a phosphor sheet 11 in which phosphor fine particles are kneaded with a phenyl silicone resin and processed into a sheet shape. In this technique, the phosphor sheet 11 is attached to the large-format phosphor sheet 11a using an adhesive 17 (see paragraphs [0033]-[0044], etc. of Patent Document 1). Thereby, the LED device 10 to which the phosphor sheet 11 is attached is manufactured.

JP 2014-112669 A

  By the way, there is a large difference between the linear expansion coefficient of the silicone resin and the linear expansion coefficient of the substrate material. The linear expansion coefficient of the silicone resin is approximately 200 ppm to 300 ppm. The linear expansion coefficient of sapphire is approximately 7.1 ppm. The linear expansion coefficient of sintered alumina is approximately 7.2 ppm. The linear expansion coefficient of aluminum nitride is approximately 4.6 ppm.

  Thus, if there is a large difference between the linear expansion coefficient of the silicone resin and the linear expansion coefficient of the substrate material, a relatively large stress is generated in the vicinity of the boundary surface on which these are pasted. This stress may cause the phosphor sheet to peel from the semiconductor light emitting device. Further, in the case of a light emitting device having a plurality of semiconductor light emitting elements, this stress may be transmitted to the electrode connection location. Thereby, the connection failure of an electrode may arise.

  The technique of this specification has been made to solve the problems of the conventional techniques described above. That is, the object of the present invention is to provide a method for manufacturing a semiconductor light emitting device and a method for manufacturing a phosphor sheet in which the difference between the linear expansion coefficient of the phosphor sheet and the linear expansion coefficient of the substrate material is reduced. That is.

  According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, comprising: a first heat treatment step of curing a silicone resin containing a phosphor by heat treatment at a first temperature to form a silicone sheet; A second heat treatment step of further curing and forming the phosphor sheet by heat treatment at a second temperature higher than the above temperature, and a phosphor sheet attaching step of attaching the phosphor sheet to the semiconductor light emitting device.

  In this method of manufacturing a semiconductor light emitting device, an elastic silicone sheet is further solidified to obtain a phosphor sheet. Therefore, the linear expansion coefficient of the phosphor sheet is close to the linear expansion coefficient of the substrate material. Therefore, no great stress is generated between the phosphor sheet and the substrate material. Therefore, there is almost no possibility that the phosphor sheet peels from the substrate material.

  In the method for manufacturing a semiconductor light emitting device according to the second aspect, in the second heat treatment step, the rate of decrease in the mass of the phosphor sheet relative to the mass of the silicone sheet is in the range of 2.5% to 7.5%. .

  In the method for manufacturing a semiconductor light emitting device according to the third aspect, in the second heat treatment step, heat treatment is performed in a state where the silicone sheet is sandwiched between the first plate member and the second plate member.

  In the method for manufacturing a semiconductor light emitting device according to the fourth aspect, in the second heat treatment step, at least one of the first plate member and the second plate member is formed with irregularities.

  According to a fifth aspect of the present invention, there is provided a phosphor sheet manufacturing method comprising: a first heat treatment step of curing a silicone resin containing a phosphor by heat treatment at a first temperature to form a silicone sheet; And a second heat treatment step of further curing and forming the phosphor sheet by heat treatment at a second temperature higher than the above temperature.

  In the present specification, there are provided a method for manufacturing a semiconductor light emitting device and a method for manufacturing a phosphor sheet in which the difference between the linear expansion coefficient of the phosphor sheet and the linear expansion coefficient of the substrate material is reduced.

It is a figure which shows schematic structure of the light-emitting device in 1st Embodiment. It is a figure which shows the board member used at a 2nd heat treatment process. It is a figure for demonstrating the manufacturing method of the fluorescent substance sheet in 1st Embodiment. It is a graph which shows the relationship between the heat processing time of a silicone sheet | seat in the case where the kind of silicone resin is changed, and a mass decreasing rate. It is a graph which shows the relationship between the heat processing time of a silicone sheet | seat, and the mass reduction | decrease rate in the case of changing the kind of fluorescent substance mixed in a silicone resin. It is a figure which shows schematic structure of the light-emitting device in 2nd Embodiment. It is a figure which shows the board member in 3rd Embodiment. It is a figure which shows the VIII-VIII cross section of FIG. It is a figure which shows the board member in the 1st modification of 3rd Embodiment. It is a figure which shows the board member in the 2nd modification of 3rd Embodiment. It is a figure which shows the board member in the 3rd modification of 3rd Embodiment.

  Hereinafter, specific embodiments will be described with reference to the drawings, taking a method for manufacturing a semiconductor light emitting device and a method for manufacturing a phosphor sheet as examples. However, the technique of this specification is not limited to the embodiment. Moreover, the laminated structure and electrode structure of each layer of the semiconductor light emitting device described later are examples. Of course, a laminated structure different from that of the embodiment may be used. And the thickness of each layer in each figure is shown conceptually and does not indicate the actual thickness.

(First embodiment)
1. Semiconductor Light Emitting Device FIG. 1 is a diagram showing a schematic configuration of a light emitting device 100 of the present embodiment. The light emitting device 100 is a semiconductor light emitting device having a semiconductor light emitting element 110. As illustrated in FIG. 1, the light emitting device 100 includes a semiconductor light emitting element 110, a support substrate 120, a bonding layer 130, an adhesive 141, a phosphor-containing silicone resin 142, and a phosphor sheet 150. The semiconductor light emitting device 110 is bonded to the support substrate 120 by the bonding layer 130.

  The semiconductor light emitting element 110 includes a sapphire substrate 111, a semiconductor layer 112, and a first electrode 113. The sapphire substrate 111 is a growth substrate for growing the semiconductor layer 112. The semiconductor layer 112 includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer is a layer that emits light by recombination of holes and electrons. The first electrode 113 has an n electrode and a p electrode. The n electrode is electrically connected to the n-type semiconductor layer. The p electrode is electrically connected to the p-type semiconductor layer.

  The support substrate 120 includes an insulating substrate 121 and a second electrode 122. The insulating substrate 121 is a substrate for supporting each part of the light emitting device 100. The second electrode 122 includes an n-side electrode and a p-side electrode that are electrically connected to the first electrode 113. Further, the second electrode 122 may have a circuit formed over the insulating substrate 121. The n-side electrode of the second electrode 122 is electrically connected to the n-electrode of the first electrode 113 through the bonding layer 130. The p-side electrode of the second electrode 122 is electrically connected to the p-electrode of the first electrode 113 through the bonding layer 130.

  The bonding layer 130 is a layer for bonding the semiconductor light emitting element 110 and the support substrate 120. As described above, the bonding layer 130 is for electrically connecting the first electrode 113 of the semiconductor light emitting device 110 and the second electrode 122 of the support substrate 120. The bonding layer 130 is, for example, one of an Au—Sn alloy, a silver or copper nano paste, and a gold bump. Alternatively, the bonding layer 130 may be other than the above. However, the bonding layer 130 is a conductive material and a material that can be bonded.

  The adhesive 141 is for bonding the sapphire substrate 111 and the phosphor sheet 150. The adhesive 141 is, for example, a silicone resin. Alternatively, other materials may be used as long as they are transparent adhesives.

  The phosphor-containing silicone resin 142 is a silicone resin containing a phosphor. The phosphor-containing silicone resin 142 fills the gap above the support substrate 120. The phosphor of the phosphor-containing silicone resin 142 is, for example, YAG. Alternatively, YAG: Ce. Of course, other phosphors may be used. The phosphor material will be described later.

  The phosphor sheet 150 is a sheet containing a phosphor. The phosphor contained in the phosphor sheet 150 may be the same as that contained in the phosphor-containing silicone resin 142. As will be described later, the phosphor sheet 150 is sufficiently hard as compared with a sheet made of a normal silicone material since it has been subjected to heat treatment.

2. 2. Raw material of phosphor sheet 2-1. Silicone resin The raw material of the phosphor sheet 150 is, for example, a silicone resin. As the silicone resin, for example, a cross-linked product obtained by hydrosilylation reaction of a cross-linkable silicone composition including the following compositions (A) to (D) is preferably used.

(A) Average unit formula:
(R ¹ ₂ SiO _2/2 ) _a (R ¹ SiO _3/2 ) _b (R ² O _1/2 ) _c
(In the formula, R ¹ is a phenyl group, an alkyl or cycloalkyl group having 1 to 6 carbon atoms, or an alkenyl group having 2 to 6 carbon atoms, provided that 65 to 75 mol% of R ¹ is phenyl. 10 to 20 mol% of R ¹ is an alkenyl group, R ² is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and a, b and c are 0.5 ≦ a ≦ 0.6. 0.4 ≦ b ≦ 0.5, 0 ≦ c ≦ 0.1, and a + b = 1.)
An organopolysiloxane represented by
(B) General formula:
R ³ ₃ SiO (R ³ ₂ SiO) _m Si R ³ ₃
(Wherein R ³ is a phenyl group, an alkyl or cycloalkyl group having 1 to 6 carbon atoms, or an alkenyl group having 2 to 6 carbon atoms, provided that 40 to 70 mol% of R ³ is phenyl. And at least one of R ³ is an alkenyl group, and m is an integer of 5 to 50.)
Represented by the formula {5 to 15 parts by weight per 100 parts by weight of component (A)}
(C) General formula:
(HR ⁴ ₂ SiO) ₂ SiR ⁴ ₂
(In the formula, R ⁴ is a phenyl group, or an alkyl or cycloalkyl group having 1 to 6 carbon atoms, provided that 30 to 70 mol% of R ⁴ is phenyl.)
Represented by the formula {amount in which the molar ratio of silicon atom-bonded hydrogen atoms in this component to the total of alkenyl groups in component (A) and component (B) is 0.5-2},
(D) Hydrosilylation reaction catalyst {Amount sufficient to promote hydrosilylation reaction between alkenyl group in component (A), component (B) and silicon atom-bonded hydrogen atom in component (C)}
A crosslinkable silicone composition having at least the above is preferably used.

2-2. Phosphors As phosphors emitting green light, for example, SrAl ₂ O ₄ : Eu, Y ₂ SiO ₅ : Ce, Tb, MgAl ₁₁ O ₁₉ : Ce, Tb, Sr ₇ Al ₁₂ O ₂₅ : Eu, (Mg, Ca , Sr, or Ba, at least one) Ga ₂ S ₄ : Eu.

As phosphors emitting blue light, for example, Sr ₅ (PO ₄ ) ₃ Cl: Eu, (SrCaBa) ₅ (PO ₄ ) ₃ Cl: Eu, (BaCa) ₅ (PO ₄ ) ₃ Cl: Eu, (Mg, And at least one of Ca, Sr, and Ba) ₂ B ₅ O ₉ Cl: Eu, Mn, (at least one of Mg, Ca, Sr, and Ba) (PO ₄ ) ₆ Cl ₂ : Eu, Mn .

As phosphors emitting green to yellow, at least cerium-activated yttrium / aluminum oxide phosphors, at least cerium-enriched yttrium / gadolinium / aluminum oxide phosphors, at least cerium-activated yttrium / aluminum Examples include garnet oxide phosphors and yttrium gallium aluminum oxide phosphors activated with at least cerium (so-called YAG phosphors). Specifically, Ln ₃ M ₅ O ₁₂ : R (Ln is at least one selected from Y, Gd, and La. M includes at least one of Al and Ca. R is a lanthanoid series. ), (Y _1-x Ga _x ) ₃ (Al _1-y Ga _y ) ₅ O ₁₂ : R (R is at least one or more selected from Ce, Tb, Pr, Sm, Eu, Dy, Ho) 0 <x <0.5, 0 <y <0.5) can be used.

Examples of phosphors that emit red light include Y ₂ O ₂ S: Eu, La ₂ O ₂ S: Eu, Y ₂ O ₃ : Eu, and Gd ₂ O ₂ S: Eu.

As the phosphor emitting in response to the blue _{LED, Y 3 (Al, Ga} ) 5 O 12: Ce, (Y, Gd) 3 Al 5 O 12: Ce, Lu 3 Al 5 O 12: Ce, YAG based phosphors such as Y ₃ Al ₅ O ₁₂ : Ce, TAG based phosphors such as Tb ₃ Al ₅ O ₁₂ : Ce, (Ba, Sr) ₂ SiO ₄ : Eu based phosphors and Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce-based phosphor, (Sr, Ba, Mg) ₂ SiO ₄ : Eu and other silicate phosphors, (Ca, Sr) ₂ Si ₅ N ₈ : Eu, (Ca, Sr) AlSiN ₃ : Eu, CaSiAlN ₃ : nitride phosphor such as Eu, Cax (Si, Al) ₁₂ (O, N) ₁₆ : oxynitride phosphor such as Eu, (Ba, Sr, Ca) Si ₂ O ₂ N ₂ : Eu _{phosphor, Ca 8 MgSi 4 O 16 Cl} 2: Eu phosphor, SrAl ₂ O _{4 Eu, Sr 4 Al 14 O 25} : Eu , and the like.

3. Here, a method for manufacturing a phosphor sheet will be described. The phosphor sheet manufacturing process of the present embodiment includes a kneading process in which a phosphor is mixed with a silicone resin, and a silicone resin containing the phosphor is cured by heat treatment at a first temperature to be molded into a silicone sheet. And a second heat treatment step of further curing the silicone sheet by heat treatment at a second temperature higher than the first temperature to form a phosphor sheet.

3-1. Kneading step First, a phosphor is mixed with a liquid or slurry silicone resin. Then, the phosphor is diffused inside the silicone resin. By this kneading, a mixture of silicone resins containing a phosphor is produced.

3-2. First heat treatment process (silicone sheet forming process)
Next, the mixture of silicone resins is molded by a thermosetting press. Specifically, a liquid or slurry silicone resin is poured into the recess of the mold. Next, the mold and the lid are heated while being sandwiched in the recess of the mold. The heat treatment temperature is 120 ° C. or higher and 150 ° C. or lower. The heat treatment time is 30 minutes or more and 3 hours or less. These numerical ranges are examples, and numerical ranges other than these may be used. As a result, the silicone resin is solidified to form a silicone sheet S1 (see FIG. 2). At this stage, the silicone sheet S1 is rubbery. Therefore, it is easily deformed by applying human power. The silicone sheet S1 is an elastic member.

3-3. Second heat treatment process (post-curing process)
A silicone sheet S1 shown in FIG. As shown in FIG. 3, the plate member 1100 is a plate-like member. The material of the plate member 1100 is, for example, any of stainless steel, brass, aluminum alloy, and glass. The material of the plate member 1100 may be other materials as long as it is a material that is not easily oxidized by heat treatment.

  As shown in FIG. 3, the silicone sheet S1 is heat-treated with the silicone sheet S1 sandwiched between the first plate member (1100) and the second plate member (1100). The plate member 1100 is not warped by this heating. Therefore, the silicone sheet S1 does not warp. The heat treatment temperature is 170 ° C. or higher and 250 ° C. or lower. The heat treatment time is 10 hours or more and 10,000 hours or less. These numerical ranges are examples, and numerical ranges other than these may be used. Thereby, the silicone sheet S1 is further cured to become the phosphor sheet 150. The phosphor sheet 150 that has undergone the second heat treatment step is sufficiently hard as will be described later.

  Thus, in the second heat treatment step, the silicone sheet S1 is post-cured. In the present specification, post-curing refers to a higher hardness than the hardness when a liquid or slurry silicone resin is solidified to form a solid. This post-curing is caused by performing the second heat treatment step at a temperature higher than that of the first heat treatment step.

  As will be described later, in the second heat treatment step, the mass reduction rate of the phosphor sheet 150 with respect to the mass of the silicone sheet S1 is set in the range of 2.5% to 7.5%.

4). Characteristics of phosphor sheet 4-1. Hardness of phosphor sheet A normal silicone resin is obtained by solidifying a liquid silicone resin. However, ordinary silicone resin is rubbery and easily elastically deforms. Therefore, it is easily deformed by human power.

  On the other hand, the phosphor sheet 150 is sufficiently harder than a normal silicone resin. The phosphor sheet 150 of the present embodiment is obtained by further heat-treating the rubber-like silicone sheet S1. By this heat treatment, the silicone resin changes from rubber to glass. Therefore, the phosphor sheet 150 has an intermediate hardness between rubber hardness and glass hardness. The phosphor sheet 150 is slightly deformed by human power.

4-2. Therefore, the linear expansion coefficient of the phosphor sheet 150 close to the glass shape is close to the linear expansion coefficient of the substrate material. However, the standards differ between the method for measuring the linear expansion coefficient of the substrate material and the method for measuring the linear expansion coefficient of the silicone resin. Therefore, it is generally difficult to compare numerical values.

4-3. Mass change rate of phosphor sheet Silicon sheet S1 is cured by the second heat treatment step (post-curing step). In the second heat treatment step, the mass of the silicone sheet S1 changes. Specifically, the silicone sheet S1 is lightened to some extent by being subjected to the second heat treatment step. This is considered to be because an alkyl group or an alkenyl group is detached from the silicone resin to some extent. Thus, since the alkyl group or the alkenyl group is released, the silicone sheet S1 is considered to be close to SiO ₂ , that is, glass. Thus, the phosphor sheet 150 has an intermediate hardness between rubber hardness and glass hardness.

  Thus, the phosphor sheet 150 has a smaller mass than the original material. The mass change rate of the phosphor sheet 150 (the decrease rate of the mass of the phosphor sheet 150 with respect to the mass of the silicone sheet S1) is in the range of 2.5% to 7.5%.

5). Manufacturing method of semiconductor light emitting device 5-1. Semiconductor Light Emitting Element Preparation Step The semiconductor light emitting element 110 is prepared. Therefore, a commercially available semiconductor light emitting element may be purchased or a semiconductor light emitting element may be manufactured. In order to manufacture the semiconductor light emitting device 110, the semiconductor layer 112 and the first electrode 113 are formed on the sapphire substrate 111.

5-2. Support Substrate Preparation Step A support substrate 120 is prepared. Therefore, a commercially available support substrate may be purchased or a support substrate may be manufactured. In order to manufacture the support substrate 120, the second electrode 122 is formed on the insulating substrate 121.

5-3. Bonding Step Here, the semiconductor light emitting device 110 is bonded to the support substrate 120. At that time, the first electrode 113 of the semiconductor light emitting element 110 and the second electrode 122 of the support substrate 120 are joined to be electrically connected. In this joining, soldering can be performed using Au-Sn solder. Further, a silver paste, a copper paste, a gold bump or the like may be used. Thereby, the first electrode 113 and the second electrode 122 are electrically connected.

5-4. Silicone Resin Filling Step Next, the phosphor-containing silicone resin 142 is filled into the support substrate 120 to which the semiconductor light emitting element 110 is bonded. Then, the phosphor-containing silicone resin 142 is subjected to heat treatment. Thereby, the phosphor-containing silicone resin 142 is solidified.

5-5. Phosphor sheet manufacturing process As described above, in the phosphor sheet manufacturing process, the kneading process, the first heat treatment process, and the second heat treatment process are performed.

5-6. Next, the adhesive 141 is applied to the back surface of the sapphire substrate 111 of the semiconductor light emitting device 110. Then, the phosphor sheet 150 is attached to the back surface of the sapphire substrate 111 via an adhesive 141.

5-7. Other Steps In addition to the above, a heat treatment step, a step of cutting out the phosphor sheet 150 to form a large number of semiconductor light emitting devices 100, and the like may be performed. Moreover, the semiconductor light emitting element preparation process, the support substrate preparation process, and the phosphor sheet manufacturing process are independent processes. Therefore, these orders may be changed. Thus, the semiconductor light emitting device 100 is manufactured.

6). Experiment Here, an experiment performed for the second heat treatment step (post-curing step) will be described. Therefore, a silicone resin heat-treated at 130 ° C. for 1 hour in the first heat treatment step (silicone sheet forming step) was used. And about the obtained silicone sheet, conditions were changed and the 2nd heat processing process (post-curing process) was implemented.

  FIG. 4 is a graph showing the relationship between the heat treatment time and mass reduction rate of the silicone sheet when the type of silicone resin is changed. Here, no phosphor is added to the silicone resin. The heat treatment temperature was 200 ° C. The horizontal axis in FIG. 4 is the heat treatment time. The vertical axis in FIG. 4 is the mass reduction rate. As shown in FIG. 4, as the heat treatment time increases, the mass of the silicone sheet gradually decreases. As described above, this is considered to be due to the gradual separation of the alkyl group or alkenyl group from the silicone resin. This tendency is common from silicone A to silicone D. And the tendency for a silicone resin to become hard was also seen, so that heat processing time was lengthened.

  Here, when the mass reduction rate of the silicone sheet is 2.5% or more and 7.5% or less, the obtained silicone sheet is considered to have a suitable linear expansion coefficient. A silicone sheet having a mass reduction rate of 2.5% or more and 7.5% or less is in a state between rubber and glass. That is, when a person applies force to the silicone sheet, the silicone sheet is slightly deformed. Or, the silicone sheet is slightly deformed. When the mass reduction rate of the silicone sheet is 2.5% or more and 7.5% or less, the linear expansion coefficient of the silicone sheet is considered to be very close to the linear expansion coefficient of the sapphire substrate 111.

  The mass reduction rate of the silicone sheet becomes 2.5% or more and 7.5% or less when the heat treatment time is about 10 hours or more and 10,000 hours or less. Further, the mass reduction rate of the silicone sheet is more preferably 3% or more and 6% or less. More preferably, the mass reduction rate of the silicone sheet is 3.5% or more and 5.5% or less.

  FIG. 5 is a graph showing the relationship between the heat treatment time and the mass reduction rate of the silicone sheet when the type of phosphor mixed in the silicone resin is changed. The type of silicone used is silicone A. The heat treatment temperature was 200 ° C. The horizontal axis in FIG. 5 is the heat treatment time. The vertical axis in FIG. 5 is the mass reduction rate. As shown in FIG. 5, the mass reduction rate slightly changes depending on the presence or absence of the phosphor. However, the tendency with the phosphor is almost the same as the tendency without the phosphor. In addition, although there is a slight difference depending on the type of phosphor, the tendency of the mass reduction rate does not vary so much with the type of phosphor. In FIGS. 4 and 5, the mass reduction rate is plotted as a negative value. In the present specification, the mass reduction rate is defined as a positive value.

7). Modification 7-1. Growth Substrate The semiconductor light emitting device 100 has a sapphire substrate 111. However, the growth substrate of the semiconductor light emitting device 110 may be a substrate other than the sapphire substrate 111. For example, a Si, SiC, GaN, or AlN substrate may be used.

7-2. Semiconductor Layer The semiconductor layer 112 is, for example, a group III nitride semiconductor layer. However, other III-V group semiconductor layers such as GaAs may be used. Other Si-based semiconductor layers may also be used. Of course, other semiconductor layers may be used.

8). Summary of this Embodiment As described in detail above, the semiconductor light emitting device 100 includes the semiconductor light emitting element 110 and the support substrate 120. A phosphor sheet 150 is bonded to the back surface of the substrate of the semiconductor light emitting device 110 via an adhesive 141. Here, the phosphor sheet 150 has an appropriate hardness. That is, the linear expansion coefficient of the phosphor sheet 150 is substantially equal to the linear expansion coefficient of the sapphire substrate 111.

  The embodiment described above is merely an example. Therefore, naturally, various improvements and modifications can be made without departing from the scope of the invention. The stacked structure of the semiconductor layer 112 is not limited to the structure described in this embodiment.

(Second Embodiment)
A second embodiment will be described. Differences from the first embodiment will be described.

1. Semiconductor Light Emitting Device FIG. 6 is a diagram showing a schematic configuration of the light emitting device 200 of the present embodiment. The light emitting device 200 is a semiconductor light emitting device having a semiconductor light emitting element 110. As illustrated in FIG. 6, the light emitting device 200 includes a semiconductor light emitting element 110, a support substrate 120, a bonding layer 130, a phosphor-containing silicone resin 241, and a phosphor sheet 150. The semiconductor light emitting device 110 is bonded to the support substrate 120 by the bonding layer 130.

  The phosphor-containing silicone resin 241 contains a phosphor and also serves as an adhesive that adheres the phosphor sheet 150 to the sapphire substrate 111 of the semiconductor light emitting device 110.

2. Manufacturing Method of Semiconductor Light Emitting Device In this embodiment, the silicone resin filling step and the phosphor sheet pasting step are an integrated step. Therefore, only the phosphor sheet attaching step will be described. This phosphor sheet attaching step is performed after the joining step and the phosphor sheet manufacturing step.

2-1. Phosphor sheet pasting step The phosphor-containing silicone resin 241 is filled in the support substrate 120 to which the semiconductor light emitting device 110 is bonded. Then, the phosphor sheet 150 is attached to the back surface of the sapphire substrate 111. Thereafter, the phosphor-containing silicone resin 142 is subjected to heat treatment. By this step, the phosphor-containing silicone resin 241 is filled and the phosphor sheet 150 is attached to the sapphire substrate 111.

3. Modification The modification of the first embodiment may be applied to the technique of the second embodiment.

(Third embodiment)
A third embodiment will be described. In the third embodiment, the plate member used in the second heat treatment step is different from that in the first embodiment. Therefore, differences from the first embodiment will be described.

1. Plate Member FIG. 7 is a diagram showing a plate member 1200. FIG. 8 is a cross-sectional view showing a VIII-VIII cross section of FIG. As shown in FIG. 8, the plate member 1200 has a large number of recesses 1201. The material of the plate member 1200 is the same as that of the plate member 1100 of the first embodiment.

2. Production method of phosphor sheet Up to the first heat treatment step is the same as in the first embodiment. In addition, silicone sheet S1 after implementing a 1st heat processing process is an elastic material.

2-1. Second heat treatment process (post-curing process)
In the second heat treatment step, the silicone sheet S1 is sandwiched between the plate members 1200. And heat processing is implemented on the conditions similar to the 2nd heat processing process of 1st Embodiment. By carrying out this second heat treatment step, the phosphor sheet 150 has a shape in which a large number of convex portions are arranged.

3. Modification 3-1. Shape of Plate Member FIG. 9 is a view showing a plate member 1300 in the first modification. As shown in FIG. 9, the plate member 1300 has uneven portions 1301 and 1302. The concavo-convex portions 1301 and 1302 have conical or pyramidal concavo-convex shapes. Therefore, the phosphor sheet 150 has irregularities on both sides.

  FIG. 10 is a diagram showing a plate member 1400 in the second modification. As shown in FIG. 10, the plate member 1400 has convex portions 1401 and 1402. The convex portions 1401 and 1402 have convex portions that are nearly hemispherical. Therefore, the phosphor sheet 150 has concave portions on both sides.

  FIG. 11 is a diagram showing a plate member 1500 in the third modification. As shown in FIG. 11, the plate member 1500 has concave portions 1501 and 1502 on both surfaces thereof. The concave portions 1501 and 1502 have concave portions having a shape close to a hemisphere. Therefore, the phosphor sheet 150 has convex portions on both sides.

  Thus, in a 2nd heat treatment process, what formed unevenness is used as at least one of the 1st board member and the 2nd board member which sandwich silicone sheet S1. Thereby, the light extraction efficiency from the light emitting device is improved.

3-2. Other Modifications Modifications of the first embodiment may be applied to the techniques of the third embodiment and the modification.

DESCRIPTION OF SYMBOLS 100, 200 ... Semiconductor light-emitting device 110 ... Semiconductor light-emitting element 111 ... Sapphire substrate 112 ... Semiconductor layer 113 ... 1st electrode 120 ... Support substrate 121 ... Insulating substrate 122 ... 2nd electrode 130 ... Bonding layer 141 ... Adhesive 142, 241 ... Phosphor-containing silicone resin 150 ... Phosphor sheet S1 ... Silicone sheet

Claims (5)

In a method for manufacturing a semiconductor light emitting device,
A first heat treatment step of curing the silicone resin containing the phosphor by heat treatment at a first temperature to form a silicone sheet;
A second heat treatment step of further curing the silicone sheet by heat treatment at a second temperature higher than the first temperature to form a phosphor sheet;
A phosphor sheet attaching step of attaching the phosphor sheet to a semiconductor light emitting device;
A method of manufacturing a semiconductor light emitting device, comprising: In the manufacturing method of the semiconductor light-emitting device according to claim 1,
In the second heat treatment step,
A method of manufacturing a semiconductor light-emitting device, wherein a reduction rate of the mass of the phosphor sheet with respect to the mass of the silicone sheet is in a range of 2.5% to 7.5%. In the manufacturing method of the semiconductor light-emitting device according to claim 1 or 2,
In the second heat treatment step,
A method of manufacturing a semiconductor light-emitting device, wherein heat treatment is performed with the silicone sheet sandwiched between a first plate member and a second plate member. In the manufacturing method of the semiconductor light-emitting device according to claim 3,
In the second heat treatment step,
A method for manufacturing a semiconductor light emitting device, wherein at least one of the first plate member and the second plate member is formed with irregularities. In the method for producing a phosphor sheet,
A first heat treatment step of curing the silicone resin containing the phosphor by heat treatment at a first temperature to form a silicone sheet;
A second heat treatment step of further curing the silicone sheet by heat treatment at a second temperature higher than the first temperature to form a phosphor sheet;
A method for producing a phosphor sheet, comprising: