JP2017110275A - Substrate with thin film, thin film deposition system and thin film formation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate with a thin film having high barrier property, and having little warpage after film deposition; and to provide a thin film deposition system and a thin film formation method capable of producing such a substrate with a thin film.SOLUTION: A substrate with a thin film includes a substrate 2, a first vapor-deposited film M1 deposited on a prescribed surface of the substrate 2, a second vapor-deposited film M2 deposited on the opposite side to a surface in contact with the substrate 2 of the first vapor-deposited film M1, in which raw material gas is the same as raw material gas for the first vapor-deposited film M1. A ratio of impurities caused by the raw material gas contained in the first vapor-deposited film M1 is larger than a ratio of impurities caused by the raw material gas contained in the second vapor-deposited film M2.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate with a thin film on which a thin film for preventing moisture intrusion is formed, a thin film forming apparatus for forming a substrate with a thin film, and a thin film forming method.

  In the manufacture of electronic devices that are sensitive to moisture, such as organic EL and thin film solar cells, it is necessary to seal the device so that moisture does not enter the device. In the past, devices were sealed using glass or films with high barrier properties. However, in order to make products thinner and lighter, thin films with high barrier properties (barrier films) have recently been produced by dry processes such as CVD. ) Is formed on the surface of the device, and means for protecting the electronic device from the outside air is being adopted.

  However, if the barrier film is simply formed on the substrate, it may be difficult to handle the substrate after forming the barrier film. Specifically, a barrier film having a high barrier property is dense and formed under a high temperature condition. For example, when the base material is formed of a material that expands and contracts by heat such as a resin film, the base material is formed after the film formation. When the barrier film is cooled, the substrate shrinks, whereas the barrier film hardly shrinks because of the high density, and as a result, the barrier film surface warps in a convex state, which hinders handling in the subsequent processes. There was a problem of causing

  The present invention has been made in view of the above problems, and has a substrate with a thin film having high barrier properties and little warpage after film formation, a thin film forming apparatus capable of producing such a substrate with a thin film, and It aims at providing the thin film formation method.

  In order to solve the above problems, a substrate with a thin film according to the present invention includes a substrate, a first vapor-deposited film formed on a predetermined surface of the substrate, and a surface of the first vapor-deposited film that contacts the substrate. And a second vapor deposition film whose source gas is the same as the source gas of the first vapor deposition film, and is caused by the raw material gas contained in the first vapor deposition film The ratio of impurities to the first vapor deposition film is larger than the ratio of impurities due to the source gas contained in the second vapor deposition film to the second vapor deposition film.

  According to the said base material with a thin film, it has high barrier property and the curvature after film-forming decreases. Specifically, the ratio of the impurities contained in the first vapor deposition film to the first vapor deposition film is larger than the ratio of the impurities contained in the second vapor deposition film to the second vapor deposition film, whereby the first The density of the deposited film is lower than the density of the second deposited film. As a result, the first vapor deposition film has flexibility instead of lowering the barrier property as compared with the second vapor deposition film, and deforms corresponding to the shrinkage of the substrate cooled after the film formation. Therefore, even if the second vapor-deposited film is a film having a high density and a high barrier property, the warp of the base material after the film formation can be reduced. In addition, since the source gas of the second vapor deposition film is the same as that of the first vapor deposition film, the first vapor deposition film and the second vapor deposition film are the same type of film, and the adhesion between the films becomes high. .

  In order to solve the above problems, the thin film forming apparatus of the present invention includes a first plasma electrode for generating plasma, and a first deposition film is formed on a predetermined surface of a substrate to be transported. And a second plasma electrode that generates plasma, and is disposed on the downstream side of the first film forming means in the transport direction of the base material, and is formed on the base material. A second film-forming unit that forms a second vapor-deposited film using the same raw material as that used in the first film-forming unit on a surface opposite to the surface in contact with the substrate of the vapor-deposited film, The intensity of plasma generated from the first plasma electrode is lower than the intensity of plasma generated from the second plasma electrode.

  According to the thin film forming apparatus, it is possible to manufacture a substrate with a thin film having high barrier properties and little warpage after film formation. Specifically, since the intensity of the plasma generated from the first plasma electrode is lower than the intensity of the plasma generated from the second plasma electrode, the plasma generated by the first plasma electrode is higher than the plasma generated by the second plasma electrode. As a result, the first vapor deposition film contains more impurities due to the source gas than the second vapor deposition film, and the density of the first vapor deposition film is the second vapor deposition film. Lower than the density of. As a result, the first vapor deposition film has flexibility instead of lowering the barrier property as compared with the second vapor deposition film, and deforms corresponding to the shrinkage of the substrate cooled after the film formation. Therefore, even if the second vapor-deposited film is a film having a high density and a high barrier property, the warp of the base material after the film formation can be reduced. In addition, since the source gas of the second vapor deposition film is the same as that of the first vapor deposition film, the first vapor deposition film and the second vapor deposition film are the same type of film, and the adhesion between the films becomes high. .

  In order to solve the above problems, the thin film forming method of the present invention includes a first film forming step of forming a first vapor-deposited film on a predetermined surface of a substrate to be conveyed by plasma CVD, and a substrate. A second vapor deposition film is formed by plasma CVD using the same raw material as that used in the first film formation step on the surface of the first vapor deposition film formed on the side opposite to the surface in contact with the substrate. And the plasma intensity in the first film formation process is lower than the plasma intensity in the second film formation process.

  According to the thin film forming method, it is possible to manufacture a substrate with a thin film having high barrier properties and little warpage after film formation. Specifically, the plasma intensity in the first film formation step is lower than the plasma intensity in the second film formation step, so that the plasma in the first film formation step is higher than the plasma in the second film formation step. As a result, the first vapor deposition film contains more impurities due to the source gas than the second vapor deposition film, and the density of the first vapor deposition film is the second vapor deposition film. Lower than the density of. As a result, the first vapor deposition film has flexibility instead of lowering the barrier property as compared with the second vapor deposition film, and deforms corresponding to the shrinkage of the substrate cooled after the film formation. Therefore, even if the second vapor-deposited film is a film having a high density and a high barrier property, the warp of the base material after the film formation can be reduced. In addition, since the source gas of the second vapor deposition film is the same as that of the first vapor deposition film, the first vapor deposition film and the second vapor deposition film are the same type of film, and the adhesion between the films becomes high. .

  According to the base material with a thin film of the present invention, it has high barrier properties and less warpage after film formation. Moreover, according to the thin film forming apparatus and the thin film forming method of the present invention, it is possible to manufacture a substrate with a thin film having high barrier properties and little warpage after film formation.

It is the schematic which shows the thin film formation apparatus in one Embodiment of this invention. It is the schematic which shows the base material with a thin film manufactured with the thin film forming apparatus of this invention. It is a flowchart which shows the thin film formation method in one Embodiment of this invention.

  Embodiments according to the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic view showing a thin film forming apparatus according to an embodiment of the present invention.

  The thin film forming apparatus 1 is for forming a thin film by performing a surface treatment on a base material. For example, a thin film forming apparatus 1 is used for forming a barrier film on a plastic film for the purpose of preventing oxidation and preventing moisture intrusion, Used for protective films, flexible solar cells, etc. Specifically, in the case of a flexible solar cell, a solar cell composed of each electrode layer, a photoelectric conversion layer, and the like is formed on a band-shaped substrate such as a plastic film, and then the thin film forming apparatus 1 uses the solar cell. A barrier film is formed by forming a plurality of thin films on the cell. Thereby, the penetration | invasion of a water | moisture content into a photovoltaic cell is prevented effectively, and the flexible solar cell excellent in the oxidation characteristic can be formed.

  The thin film forming apparatus 1 includes an unwinding roll 3 that feeds out a base material 2, a winding roll 4 that winds up the supplied base material 2, and a main roll disposed between the unwinding roll 3 and the winding roll 4. It has a roll 5, a main chamber 6 for accommodating these, and a film forming means 7 (first film forming means 7 a and second film forming means 7 b) for forming a thin film. A thin film is formed on the substrate 2 by passing each film forming means 7 while the fed substrate 2 is transported along the outer peripheral surface 51 of the main roll 5, and is taken up by the take-up roll 4. It is supposed to be.

  The unwinding roll 3 and the winding roll 4 have a substantially cylindrical core portion 31 and a core portion 41, and the base material 2 is wound around the core portion 31 and the core portion 41. By rotating the portion 41, the substrate 2 can be sent out or taken up. That is, by controlling the rotation of the core portion 31 and the core portion 41 by a control device (not shown), the feeding speed or the winding speed of the base material 2 can be increased and decreased. Specifically, the base material 2 is sent to the downstream side by rotating the upstream core portion in a state where the base material 2 receives a tensile force from the downstream side, and a brake is appropriately applied to the upstream core portion. By applying, the base material 2 is sent out at a constant speed without bending. In addition, by adjusting the rotation of the downstream core portion, it is possible to prevent the substrate 2 that has been sent out from being bent, and conversely, the substrate 2 can be wound up so that an unnecessary tension is not applied. It is like that.

  Here, the base material 2 is a thin plate-like long body extending in one direction, and a long body having a flat plate shape with a thickness of 0.01 mm to 0.2 mm and a width of 5 mm to 1000 mm is applied. Moreover, although it does not specifically limit as a material, In addition to metal materials, such as stainless steel and copper, a plastic film etc. are used suitably.

  As described above, the unwinding roll 3 and the winding roll 4 are paired, one of which feeds the base material 2 and the other of which winds the base material 2 at the same winding speed as the feeding speed. It is possible to transport the substrate 2 while maintaining the tension applied to 2 at a predetermined value.

  The main roll 5 is a transport unit for transporting the base material 2 supplied from the unwinding roll 3 to the take-up roll 4 while maintaining the posture of the base material 2 during film formation. The main roll 5 is disposed between the unwinding roll 3 and the winding roll 4, and is formed in a substantially cylindrical shape having a larger diameter than the core portion 31 and the core portion 41.

  The outer peripheral surface 51 of the main roll 5 is formed as a curved surface having a constant curvature in the circumferential direction, and is driven and controlled according to the rotation of the core portion 31 and the core portion 41 by a control device (not shown) and sent out from the unwinding roll 3. The base material 2 is conveyed in a state in which a predetermined tension is applied by contacting the outer peripheral surface 51 of the main roll 5. That is, the main roll 5 rotates in accordance with the rotation of the unwinding roll 3 and the take-up roll 4 while the base 2 is in contact with the outer peripheral surface 51 of the main roll 5. In the stretched state, the surface is conveyed from the unwinding roll 3 to the winding roll 4 in a posture facing each film forming means 7. By transporting and forming a film with the base material 2 stretched in this way, fluttering of the base material 2 during film formation can be prevented, and the film thickness accuracy of the thin film laminated on the base material 2 is improved. In addition, the generation of particles due to flapping of the substrate 2 can be prevented. In addition, by increasing the radius of curvature of the main roll 5, film formation is performed while the base material 2 is supported in a more flat state, and thus it is possible to suppress warping of the base material 2 after film formation. it can.

  The main chamber 6 accommodates the main roll 5 and keeps the pressure in the chamber constant. In the present embodiment, as shown in FIG. 1, the main roll chamber 6 is a casing formed in a substantially pentagonal shape having a substantially home base shape, and the main roll 5 is accommodated in the central portion thereof. A vacuum pump 61 is connected to the main chamber 6. By operating the vacuum pump 61, the pressure in the main chamber 6 can be controlled. In the present embodiment, the unwinding roll 3 and the winding roll 4 are accommodated in the main chamber 6, but a configuration in which these are provided outside the main chamber 6 may be employed. By providing these in the main chamber 6 as in the present embodiment, it is possible to protect the substrate 2 and the substrate 2 after film formation (substrate with a thin film) from exposure to the atmosphere.

  The film forming means 7 is for forming a thin film on the substrate 2. In the present embodiment, two film forming means 7 (first film forming means 7a and second film forming means 7b) are provided in the main chamber 6 so as to face the main roll 5, respectively. Then, the upstream side (the one closer to the unwinding roll 3) in the conveyance direction of the base material 2 is referred to as a first film forming unit 7a.

  In the present embodiment, these film forming means 7 are means for forming a thin film on the substrate 2 by using a plasma CVD (Chemical Vapor Deposition) method. In this description, these film forming means 7 are formed by this plasma CVD method. The thin film is called a vapor deposition film. Specifically, the film forming means 7 is connected to a high-frequency power source 74 (first high-frequency power source 74a, second high-frequency power source 74b) and is a substantially U-shaped ICP (Inductively Coupled Plasma) for generating plasma. A plasma electrode 72 (first plasma electrode 72a, second plasma electrode 72b), which is an electrode, and source gas supply means 73 (source gas supply means 73a, source gas supply means 73b) are provided. Thereby, when the base material 2 passes through each film forming means 7, a predetermined thin film (deposition film) is formed on the surface of the base material 2 on the predetermined surface (film formation surface) side. That is, plasma is generated around the plasma electrode 72 by applying a high-frequency voltage to the plasma electrode 72 from the high-frequency power source 74 while the source gas is supplied in the vicinity of the plasma electrode 72. The source gas is decomposed by this plasma and reaches the substrate 2, and a predetermined thin film is formed on the substrate 2.

  Here, in the present invention, the same raw material (raw material gas) is used in each film forming means. In this embodiment, HMDS (hexamethyldisilazane) gas and oxygen gas are supplied from the source gas supply means 73 as source gas, so that a SiO 2 film is formed on the substrate 2 as a thin film. Further, instead of the HMDS gas, a gas containing Si such as HMSO (hexamethyldisiloxane) gas may be used. It is possible to form a SiNx film by using NH3 gas instead of O2 gas, and a SiON film by using NO-based gas, but the SiO2 film has higher transparency than other thin films. Therefore, it is suitable for use on the light extraction side or the light intake side of an organic EL or thin film solar cell.

  In the present embodiment, the voltage V1 applied to the first plasma electrode 72a by the first high-frequency power source 74a is set lower than the voltage V2 applied to the second plasma electrode 72b by the second high-frequency power source 74b. . Thereby, the intensity of the plasma generated from the first plasma electrode 72a is lower than the intensity of the plasma generated from the second plasma electrode 72b.

  Next, a thin film of a substrate with a thin film manufactured by the thin film forming apparatus of this embodiment is shown in FIG.

  On the predetermined surface (film formation surface) of the base material 2, a first vapor deposition film M1 formed by the first film forming means 7a in a state of being supported by the main roll 5 is formed. A second vapor deposition film M2 formed by the second film formation unit 7b while being supported by the main roll 5 is formed on the surface of the first vapor deposition film M1 opposite to the surface in contact with the base 2. Is done. That is, a state in which the first vapor deposition film M1 and the second vapor deposition film M2 are laminated on the base material 2 so that the first vapor deposition film M1 is sandwiched between the base material 2 and the second vapor deposition film M2. A thin film is formed.

  Here, in the present invention, the thin film is formed by the plasma CVD method, but when the source gas is not partially decomposed by the plasma, it is contained in the thin film as an impurity derived from the source gas. For example, when the raw material gas of the thin film is HMDS gas and oxygen gas, each raw material gas is decomposed by plasma to form a thin film made of SiO2, but when a thin film is formed with partial decomposition insufficient, H, C, and N contained in the HMDS gas are contained as impurities in the thin film.

  In the present invention, as described above, the first thin film M1 and the second thin film M2 are obtained under the condition that the intensity of the plasma generated from the first plasma electrode 72a is lower than the intensity of the plasma generated from the second plasma electrode 72b. Is deposited. As a result, the plasma generated by the first plasma electrode 72a is less likely to decompose the source gas than the plasma generated by the second plasma electrode 72b, and as a result, the first vapor deposition film M1 has a higher raw material than the second vapor deposition film M2. The impurity content ratio (ratio of impurities contained in the vapor deposition film to the vapor deposition film) due to gas increases.

  Here, the source gas of the first thin film M1 and the second thin film M2 is HMDS gas and oxygen gas as shown in FIG. 1, and other than the voltage applied to each plasma electrode 72 (distance between the plasma electrode 72 and the substrate 2, In the state where the conditions of the source gas flow rate and the ambient pressure are substantially the same, the applied voltage V1 to the first plasma electrode 72a is set lower than the applied voltage V2 to the first plasma electrode 72b only for the applied voltage. The first vapor deposition film M1 and the second vapor deposition film M2 are formed on the substrate 2, and after the film formation, the composition of each vapor deposition film is determined by using the RBS (Rutherford Backscattering Spectrometry) method and the HFS (Hydrogen Forward Scattering) method. As a result of analysis, the composition shown in Table 1 was obtained under certain conditions, and the first vapor deposition film M1 was the second vapor deposition film M. Components other than Si and O than, that resulted such is rich in impurities. In Table 1, the ratio of each component is shown in atomic percent units, and the portion “(0)” is so small that it exceeds the measurement limit.

  As described above, when the first vapor deposition film M1 has more impurities than Si and O than the second vapor deposition film M2, it has microscopically more voids and lower density than the second vapor deposition film M2. . Therefore, the barrier property is lower than that of the second vapor deposition film M2. On the other hand, the first vapor-deposited film M1 has flexibility due to its low density, and deforms corresponding to the shrinkage of the substrate 2 cooled after the film formation. Therefore, even when the film is formed so that the second vapor-deposited film having a high density and high barrier property is laminated on the surface of the first vapor-deposited film M1, the warp of the substrate with the thin film after the film formation is reduced. be able to.

  In the present invention, the second film forming means 7b uses the same raw material gas as that used in the first film forming means 7a. As a result, the first vapor deposition film and the second vapor deposition film are the same type of film (SiO 2 film in this embodiment), and the adhesion between the films is higher than when different types of films are stacked.

  Here, only one set of the first vapor deposition film M1 and the second vapor deposition film M2 is not necessarily formed on the substrate 2. For example, as shown in FIG. 2, after the first vapor deposition film M1 and the second vapor deposition film M2 are formed on the substrate 2, the first vapor deposition film M1 and the second vapor deposition film M2 are once again formed. May be deposited. By doing so, a thin film having higher barrier properties can be formed on the substrate 2. In FIG. 2, two sets of the first vapor deposition film M1 and the second vapor deposition film M2 are illustrated, but a film having a larger number of groups may be used. The film on the final surface may be the vapor deposition film M1.

  Next, the thin film formation method in one Embodiment of this invention is shown as a flowchart in FIG.

  First, the base material 2 wound around the core portion 31 of the unwinding roll 3 is set, and after the base material 2 is placed along the outer peripheral surface 51 of each main roll 5, it is hung on the core portion 41 of the winding roll 4. (Step S1). Then, the vacuum pump 61 of the main chamber 6 is activated to reach a predetermined pressure in the main chamber 6 (step S2). Here, the pressure in the main chamber 6 is specifically about 0.001 Pa.

  After the main chamber 6 reaches a predetermined pressure, the source gas is supplied from the source gas supply means 73 of each film forming means 7, and a high frequency voltage is applied to the plasma electrode 72 by the high frequency power source 74 (step S3). Here, the applied voltage V1 from the first high frequency power supply 74a is lower than the applied voltage V2 from the second high frequency power supply 74b.

  Next, the unwinding roll 3 and the winding roll 4 are driven, and the conveyance of the base material 2 from the unwinding roll 3 toward the winding roll 4 is started (step S4).

  The substrate 2 conveyed from the unwinding roll 3 toward the winding roll 4 first enters the first film forming means 7a. In the first film forming means 7a, the source gas decomposed by exposure to the plasma atmosphere touches the base material 2, and the first vapor deposition film M1 is formed on a predetermined surface (film formation surface) of the base material 2. (Step S5). In this description, the step of forming the first vapor deposition film M1 is referred to as a first film formation step. Here, since the applied voltage V1 when forming the first deposited film M1 in the first film forming step is lower than the applied voltage V2 when forming the second deposited film M2 later as described above, The intensity of the plasma in the film forming process is lower than the intensity of the plasma in the second film forming process, and the first vapor deposition film M1 has a higher proportion of impurities due to the source gas than the second vapor deposition film M2, and has a density. It will be low.

  The base material 2 that has passed through the first film forming means 7a then enters the second film forming means 7b and is decomposed by being exposed to a plasma atmosphere (supplied by the first film forming means). (The same gas as the raw material gas) is in contact with the first vapor deposition film M1 formed on the substrate 2, and the second vapor deposition film M2 is formed on the first vapor deposition film M1 (step S6). In this description, the step of forming the second vapor deposition film M2 is referred to as a second film formation step. Here, when the second vapor deposition film M1 is formed in the second film formation step, since the plasma density is higher than that when the first vapor deposition film M1 is formed first as described above, the second vapor deposition film M1 is formed. The film M2 has a higher density than the first vapor deposition film M1 and can have a sufficient barrier property.

  And after the 1st vapor deposition film M1 and the 2nd vapor deposition film M2 were laminated | stacked and formed in the base material 2, the base material 2 was wound up by the winding roll 4, and film-forming was completed, and the base material 2 Is removed from the take-up roll 4 (step S7).

  According to the said thin film formation method, the base material with a thin film with few curvature after film-forming can be manufactured. Specifically, the plasma intensity in the first film formation step is lower than the plasma intensity in the second film formation step, so that the plasma in the first film formation step is higher than the plasma in the second film formation step. As a result, the first vapor deposition film M1 contains more impurities due to the raw material gas than the second vapor deposition film M2, and the density of the first vapor deposition film M1 is the second. It becomes lower than the density of the deposited film M2. Thereby, the first vapor deposition film M1 has flexibility instead of lowering the barrier property as compared with the second vapor deposition film M2, and deforms corresponding to the shrinkage of the substrate 2 cooled after the film formation. Therefore, even if the second vapor deposition film M2 is a film having a high density and a high barrier property, the warp of the base material 2 after the film formation can be reduced. In addition, since the second vapor deposition film M2 has the same source gas as that of the first vapor deposition film M1, the first vapor deposition film M1 and the second vapor deposition film M2 are the same type of film, and the films are in close contact with each other. Increases nature.

  In the present embodiment, the first vapor deposition film M1 and the second vapor deposition film M2 are highly transparent SiO2 films. In this case, the first vapor deposition film M1 and the second vapor deposition film M2 are not only high in light transmittance in each vapor deposition film but also the first vapor deposition film M1 and the second vapor deposition film M2 are of the same type. Therefore, the laminated film can be suitably used on the light extraction side or the light acquisition side.

  According to the base material with a thin film of the present invention, it is possible to have a high barrier property and to reduce warpage after film formation. Moreover, according to the thin film forming apparatus and the thin film forming method of the present invention, it is possible to produce a substrate with a thin film having high barrier properties and little warping after film formation.

  Here, the base material with a thin film, the thin film forming apparatus, and the thin film forming method of the present invention are not limited to the above-described forms, and may be in other forms within the scope of the present invention. For example, in the above-described embodiment, only two types of thin films of the first vapor deposition film M1 and the second vapor deposition film M2 are laminated, but not limited to this, three or more types of thin films may be laminated.

  Moreover, the method of giving a difference in the decomposition performance of the source gas by plasma in the plurality of film forming means is not limited to making a difference in the applied voltage. Table 2 shows the main methods for adjusting the decomposition performance.

  As described above, by reducing the voltage applied to the plasma electrode, the intensity of the plasma is reduced, the decomposition of the portion where the source gas is bonded does not proceed (the decomposition performance decreases), and a large amount of impurities remain. A vapor deposition film is formed, but when the supply amount of the source gas is increased as another discharge condition, for example, the source gas bonding portion increases, so that the decomposition of the source gas is difficult to proceed and the plasma intensity is lowered. As a result, the deposited film is formed with a large amount of impurities remaining.

  Further, by enclosing each film forming means in a chamber and providing a difference in the pressure in the chamber (film forming pressure), it is possible to make a difference in the decomposition performance of the source gas. When the pressure in the film forming environment increases, the amount of source gas in the chamber also increases, which is substantially the same as increasing the amount of source gas supplied, and a deposited film is formed with a large amount of impurities remaining.

  Further, even if the discharge conditions are equal, it is possible to make a difference in the decomposition performance of the raw material gas by making a difference in the configuration of the electrodes. For example, when the surface area of the plasma electrode is large, the plasma density per unit area of the plasma electrode is small, so the plasma intensity is low.

  In addition, by increasing the distance between the electrode and the base material, the intensity of the plasma generated from the plasma electrode decreases as the distance from the plasma electrode decreases. A vapor deposition film is formed with a large amount of remaining.

  In addition, a difference in the decomposition performance of the source gas can also be provided by providing a difference in the distance from the chamber wall. Since the plasma disappears on the chamber wall, which becomes the ground, the closer the distance between the plasma electrode and the chamber wall, the smaller the plasma, so the decomposition performance of the source gas near the substrate is low, and many impurities remain. In this way, a deposited film is formed.

  One of the methods for providing a difference in the decomposition performance of the source gas by plasma is effective, but a plurality of conditions may be combined.

DESCRIPTION OF SYMBOLS 1 Thin film forming apparatus 2 Base material 3 Unwinding roll 4 Winding roll 5 Main roll 6 Main chamber 7 Film forming means 7a 1st film forming means 7b 2nd film forming means 31 Core part 41 Core part 51 Outer peripheral surface 61 Vacuum Pump 72 Plasma electrode 72a First plasma electrode 72b Second plasma electrode 73 Raw material gas supply means 73a Raw material gas supply means 73b Raw material gas supply means 74 High frequency power supply 74a First high frequency power supply 74b Second high frequency power supply M1 First Deposition film M2 Second deposition film

Claims (3)

A substrate;
A first vapor deposition film formed on a predetermined surface of the substrate;
A second vapor-deposited film formed on the surface of the first vapor-deposited film opposite to the surface in contact with the substrate, wherein the source gas is the same as the source gas of the first vapor-deposited film;
With
The ratio of impurities due to the source gas contained in the first vapor deposition film to the first vapor deposition film is the ratio of impurities due to the raw material gas contained in the second vapor deposition film to the second vapor deposition film. A substrate with a thin film characterized by being larger than the above. A first film forming unit that has a first plasma electrode for generating plasma and forms a first vapor deposition film on a predetermined surface of a substrate to be conveyed;
A second plasma electrode for generating plasma, disposed downstream of the first film forming means in the transport direction of the base material, and a base material of the first vapor deposition film formed on the base material; A second film forming means for forming a second vapor deposition film on the surface opposite to the surface in contact with the same raw material as that used in the first film forming means;
With
An apparatus for forming a thin film, wherein the intensity of plasma generated from the first plasma electrode is lower than the intensity of plasma generated from the second plasma electrode. A first film forming step of forming a first vapor deposition film on a predetermined surface of a substrate to be conveyed by a plasma CVD method;
A second vapor deposition film is formed by plasma CVD using the same raw material as that used in the first film forming step on the surface opposite to the surface in contact with the base material of the first vapor deposition film formed on the base material. A second film forming step to be formed;
Have
A method of forming a thin film, characterized in that the plasma intensity in the first film formation step is lower than the plasma intensity in the second film formation step.

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