JP2017108179A5 - - Google Patents

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Publication number
JP2017108179A5
JP2017108179A5 JP2017043780A JP2017043780A JP2017108179A5 JP 2017108179 A5 JP2017108179 A5 JP 2017108179A5 JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017108179 A5 JP2017108179 A5 JP 2017108179A5
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JP
Japan
Prior art keywords
main surface
silicon carbide
orientation flat
single crystal
crystal substrate
Prior art date
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Pending
Application number
JP2017043780A
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English (en)
Japanese (ja)
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JP2017108179A (ja
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Publication date
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Priority to JP2017043780A priority Critical patent/JP2017108179A/ja
Priority claimed from JP2017043780A external-priority patent/JP2017108179A/ja
Publication of JP2017108179A publication Critical patent/JP2017108179A/ja
Publication of JP2017108179A5 publication Critical patent/JP2017108179A5/ja
Priority to JP2020122042A priority patent/JP6930640B2/ja
Pending legal-status Critical Current

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JP2017043780A 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Pending JP2017108179A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017043780A JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP2020122042A JP6930640B2 (ja) 2017-03-08 2020-07-16 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017043780A JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015228517 Division 2015-11-24 2015-11-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020122042A Division JP6930640B2 (ja) 2017-03-08 2020-07-16 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2017108179A JP2017108179A (ja) 2017-06-15
JP2017108179A5 true JP2017108179A5 (cg-RX-API-DMAC7.html) 2018-08-16

Family

ID=59060158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017043780A Pending JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Country Status (1)

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JP (1) JP2017108179A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6585799B1 (ja) * 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
US10611052B1 (en) * 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
WO2021153351A1 (ja) * 2020-01-29 2021-08-05 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7629755B2 (ja) * 2021-03-03 2025-02-14 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV

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