JP2017105650A - Silicon single crystal manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a silicon single crystal manufacturing method, in which a discharge in the slit or the like of an induction heating coil is prevented to reduce the dispersion of a nitrogen concentration in a top cone side straight trunk and a bottom cone side straight trunk of a single crystal thereby to cause neither a dislocation portion and a void defect of an elongated silicon crystal following an increase of the prepared quantity of a silicon material.SOLUTION: In an FZ method of the invention, a mixed gas of nitrogen and argon is fed to the inside of a furnace. A silicon single crystal is grown by varying a nitrogen concentration in the mixed gas during the growth of the silicon single crystal so that the nitrogen concentration of the silicon single crystal in a straight trunk may be confined within a range of 2.0×10atoms/cmto 4.0×10atoms/cm.SELECTED DRAWING: Figure 1

Description

  The present invention is based on a floating zone melting method (hereinafter referred to as FZ method) in which a silicon raw material rod is heated and melted by an induction heating coil to form a floating zone, and a rod-shaped silicon single crystal is grown by moving the floating zone. The present invention relates to a method for producing a silicon single crystal. More specifically, the present invention relates to a method for manufacturing a silicon single crystal that prevents discharge at a slit or the like of an induction heating coil and suppresses the generation of crystal defects to increase the product yield of the single crystal. In this specification, the term “single crystal productization rate” means that when a silicon single crystal is grown, the entire straight body of the silicon single crystal is treated as a product having no dislocation portion or void defect. The ratio of the straight body that can be used.

   The FZ method is a method in which a silicon raw material rod is heated and melted to a core in a narrow area in a short time to form a floating zone, and a single crystal is grown from this floating zone, and a quartz crucible is not used. There are advantages such as low contamination of impurities such as heavy metals, and growth of high resistivity single crystals.

  In order to melt the silicon raw material rod to the core in a narrow range in a short time by the FZ method, it is necessary to generate a high current in the induction heating coil. However, when a high voltage is applied between the power supply terminals of the induction heating coil, there is a problem that discharge is generated at the slit of the induction heating coil during single crystal growth, thereby preventing dislocation of the crystal. For this reason, the manufacturing method of the silicon single crystal which sprays nitrogen gas to the slit part of an induction heating coil, and prevents effectively the electric discharge which arises in the slit of an induction heating coil is disclosed (for example, refer patent document 1).

  In the invention of this Patent Document 1, by locally flowing nitrogen gas to the slit portion, the temperature in the vicinity of the slit portion is lowered, so that the generation of charged particles is suppressed and the charged particles generated in the slit are blown off with the gas. As a result, the discharge generated in the slit of the induction heating coil is effectively prevented. Patent Document 1 describes that the flow rate of the gas blown to the slit portion of the induction heating coil is preferably 10 mL / min to 1 L / min. In Examples 1 to 3 and Comparative Example 1, A silicon single crystal is manufactured by setting the nitrogen gas concentration in the chamber to a constant concentration of 0.1%.

On the other hand, when manufacturing a silicon single crystal using the FZ method, a mixed gas of nitrogen and high-purity argon is blown through a nozzle onto a red hot silicon raw material rod in the vicinity of the floating zone to melt the silicon raw material rod whose surface is nitrided Thus, a method is disclosed in which nitrogen is added to a silicon single crystal to suppress generation of crystal defects in the silicon single crystal (see, for example, Patent Document 2). In the invention of Patent Document 2, the spraying time of the mixed gas of nitrogen and high purity argon on the silicon raw material rod is adjusted, and the total spraying amount of nitrogen is 1.0 × 10 ^{22 to} 6.0 × 10 ²³ atoms. As a result, the concentration of nitrogen added to the silicon single crystal is controlled to suppress generation of crystal defects, and avoid dislocation of the single crystal due to excessive addition of nitrogen. As this crystal defect, the flow pattern defect is shown in the Example of patent document 2. FIG. This flow pattern defect is a void defect (agglomerated hole type point defect) called a D defect of a silicon single crystal.

In Patent Document 2, as the reason for setting the total amount of nitrogen to be blown within the above range, if silicon single crystal is continuously grown in a mixed gas atmosphere of nitrogen and argon, nitrogen is continuously supplied. Since the segregation coefficient with respect to is as small as 7 × 10 ⁻⁴ , the nitrogen concentration in the silicon melt increases, and the solid solubility of nitrogen in the silicon single crystal exceeds 4.5 × 10 ¹⁵ atoms / cm ³ , It is described that dislocation of a single crystal occurs. In the invention of Patent Document 2, the total amount of nitrogen sprayed is 5.0 × 10 ²² atoms, 1.0 × 10 ²³ atoms, 2.0 × 10 ²³ atoms, and 4.0 × 10 in Examples 1 to 4, respectively. ^It is set to ²³ atoms, and in Comparative Examples 2 and 3, it is set to 2.0 × 10 ²¹ atoms and 1.0 × 10 ²⁴ atoms, respectively. That is, during the growth of the silicon single crystal, the total amount of nitrogen sprayed is set constant.

JP 2007-112640 A (Claim 1, Claim 16, Paragraph [0005], Paragraph [0011], Paragraph [0065] to Paragraph [0071]) JP-A-9-286688 (Claim 1, Claim 2, Paragraph [0007], Paragraph [0014], Paragraph [0016], Paragraph [0018] to Paragraph [0020])

  In recent years, a long rod-shaped silicon single crystal has been produced by increasing the amount of silicon raw material charged. As described above, when a long silicon single crystal is grown by continuously supplying nitrogen in order to prevent discharge at a slit or the like and to suppress generation of crystal defects, it is described in Patent Document 2. As shown in the figure, the straight cone portion of the single crystal bottom cone side has an excessive nitrogen concentration and undergoes dislocation. In order to avoid the dislocation of the bottom cone side barrel of this single crystal, as in the invention of Patent Document 2, the supply amount of nitrogen gas is set constant, and then the supply amount of nitrogen gas at the initial stage of growth is reduced. When a small amount is used, excessive nitrogen concentration in the straight cone part of the bottom cone side of the single crystal can be prevented, but in the straight cylinder part of the top cone side of the single crystal, the amount of nitrogen doping becomes too small and void defects are generated due to nitrogen doping. Can not be suppressed. Silicon wafers made from silicon single crystals with void defects cannot be used for high voltage power devices. As a result, the bottom cone side barrel with dislocations and the top cone side barrel with void defects cannot be used as products. There was a problem that could not be raised.

  The first object of the present invention is to prevent discharge at the slit of the induction heating coil, reduce the variation in nitrogen concentration of the single crystal top cone side barrel and bottom cone side barrel, and It is an object of the present invention to provide a method for producing a silicon single crystal that does not cause crystal defects such as crystallization and void defects. The second object of the present invention is to provide a method for producing a silicon single crystal which increases the productization rate without crystal defects such as dislocations and void defects in the elongated silicon single crystal accompanying an increase in the amount of silicon raw material charged. It is to provide.

A first aspect of the present invention is a method for producing a silicon single crystal by supplying a mixed gas of nitrogen and argon into a furnace when producing a silicon single crystal using a single crystal production apparatus based on a floating zone melting method. The nitrogen concentration in the mixed gas is changed during the growth of the silicon single crystal so that the nitrogen concentration in the straight body portion of the silicon single crystal is 2.0 × 10 ¹⁴ atoms / cm ³ or more and 4.0 × 10. ^The silicon single crystal is grown so as to be within a range of ¹⁵ atoms / cm ³ or less, preferably 4.0 × 10 ¹⁴ atoms / cm ³ or more and 1.0 × 10 ¹⁵ atoms / cm ³ or less. .

  A second aspect of the present invention is the invention based on the first aspect, wherein when the straight body portion of the silicon single crystal is grown, the amount of nitrogen gas supplied at the end of the straight body portion is determined as the straight body. It adjusts so that it may become less than the supply amount in the start end of a part.

  A third aspect of the present invention is the invention based on the first or second aspect, wherein the single crystal manufacturing apparatus includes at least first and second supply pipes for supplying nitrogen gas. The nitrogen gas is supplied into the furnace through the first and / or second supply pipes.

  A fourth aspect of the present invention is the invention of the third aspect, characterized in that the supply of nitrogen gas through the second supply pipe is performed only in the top cone portion of the single crystal.

  A fifth aspect of the present invention is the invention of the third or fourth aspect, wherein the nitrogen gas is supplied into the single crystal by changing the supply amount of nitrogen gas through the second supply pipe according to the single crystal diameter. The amount of nitrogen produced is adjusted.

  A sixth aspect of the present invention is the invention according to any one of the third to fifth aspects, wherein the supply time of the nitrogen gas through the second supply pipe is changed according to the single crystal diameter, The amount of nitrogen taken into the single crystal is adjusted.

  A seventh aspect of the present invention is an apparatus for producing a silicon single crystal by a floating zone melting method, comprising at least two supply pipes for supplying nitrogen gas into the furnace, wherein the at least two supply pipes are the furnace. It is characterized in that the supply amount of nitrogen gas into the inside can be adjusted independently.

In the manufacturing method of the first aspect of the present invention, by supplying a mixed gas of nitrogen and argon into the furnace of the single crystal manufacturing apparatus by the FZ method, a nitride thin film is formed on the surface of the silicon raw material rod, As the silicon raw material rod is melted, nitrogen is dissolved in the melted silicon, and nitrogen is taken into (doped) into the silicon single crystal. Further, the nitrogen concentration in the mixed gas is changed during the growth of the silicon single crystal so that the nitrogen concentration in the straight body portion of the silicon single crystal is 2.0 × 10 ¹⁴ atoms / cm ³ or more and 4.0 × 10 ¹⁵ atoms / cm ^3. Since the silicon single crystal is grown so as to be within the following range, variation in the nitrogen concentration during the growth is reduced. Since nitrogen is doped so that the nitrogen concentration in the straight body portion of the silicon single crystal is 2.0 × 10 ¹⁴ atoms / cm ³ or more, void defects are eliminated in the silicon single crystal, and the straight body portion of the silicon single crystal Nitrogen is incorporated (doped) into the single crystal so that the nitrogen concentration of the silicon becomes 4.0 × 10 ¹⁵ atoms / cm ³ or less, so that the dislocation of the silicon single crystal is suppressed, and the product rate of the silicon single crystal is reduced. Can be increased. Preferably, the void defect in the top cone side straight body portion is further eliminated by setting the thickness within the range of 4.0 × 10 ¹⁴ atoms / cm ³ or more and 1.0 × 10 ¹⁵ atoms / cm ³ or less, and the bottom It is possible to further suppress the dislocation of the cone-side straight body portion and further increase the product rate of the silicon single crystal.

  In the manufacturing method according to the second aspect of the present invention, when the straight body portion of the silicon single crystal is grown, the supply amount of nitrogen gas at the end of the straight body portion is less than the supply amount at the start end of the straight body portion. By adjusting as described above, void defects due to insufficient nitrogen doping amount in the top cone side straight body portion can be eliminated, and dislocation of the single crystal due to excessive nitrogen doping in the bottom cone side straight body portion can be prevented. .

  In the manufacturing method of the third aspect of the present invention, the single crystal manufacturing apparatus includes at least first and second supply pipes for supplying nitrogen gas, and the first and / or second supply pipes provide a furnace. By supplying nitrogen gas into the inside, the nitrogen supply amount can be adjusted efficiently.

  In the manufacturing method according to the fourth aspect of the present invention, the supply of nitrogen gas through the second supply pipe is performed only at the top cone portion of the single crystal, so that the top cone side straight body portion is the same as the method according to the second aspect. Void defects due to insufficient nitrogen doping at the bottom are eliminated, and dislocation of the single crystal due to excessive nitrogen doping in the bottom cone side straight body can be prevented by changing the nitrogen supply amount of the first supply pipe. .

  In the manufacturing method according to the fifth aspect of the present invention, it is grown by adjusting the amount of nitrogen taken into the single crystal by changing the supply amount of nitrogen gas through the second supply pipe according to the diameter of the single crystal to be manufactured. The nitrogen concentration in the diameter direction of the silicon single crystal can be made uniform.

  In the manufacturing method according to the sixth aspect of the present invention, the amount of nitrogen taken into the single crystal is adjusted by changing the supply time of the nitrogen gas through the second supply pipe according to the diameter of the single crystal to be produced. Similarly to the method of this aspect, the nitrogen concentration in the diameter direction of the grown silicon single crystal can be made uniform.

  In the manufacturing apparatus according to the seventh aspect of the present invention, the nitrogen supply amount can be adjusted efficiently by supplying nitrogen gas into the furnace independently with at least two supply pipes.

It is a block diagram of the single-crystal manufacturing apparatus by FZ method which concerns on embodiment of this invention. It is a figure which shows the change condition of the nitrogen concentration in the crystal | crystallization according to the crystal length of the silicon single crystal of the comparative example 1. It is a figure which shows the change condition of the nitrogen concentration in the crystal | crystallization according to the crystal length of the silicon single crystal of the comparative examples 1 and 2. FIG. It is a figure which shows the change condition of the nitrogen concentration in the crystal | crystallization according to the crystal length of the silicon single crystal of Examples 1-3.

  Next, embodiments for carrying out the present invention will be described with reference to the drawings.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. As shown in FIG. 1, the FZ single crystal manufacturing apparatus 10 includes a furnace 13 that accommodates a silicon raw material rod 11 and a grown rod-shaped silicon single crystal 12. Examples of the silicon raw material rod 11 include a silicon polycrystalline rod, an FZ silicon single crystal rod grown halfway, a silicon single crystal rod produced by the CZ method (Czochralski method), and the like. In the furnace 13, a ring-shaped induction heating coil 14 having a slit serving as a heat source for forming the floating zone 12 a between the silicon raw material rod 11 and the silicon single crystal 12 is provided. A mixed gas of nitrogen and argon is supplied into the furnace 13 from the gas supply port 16.

  Also, in the furnace 13, an upper holding jig 17 for holding the silicon raw material rod 11, a lower holding jig 19 for holding the seed crystal 18, an upper shaft 21 for moving the silicon raw material rod 11 up and down and rotating it were grown. A lower shaft 22 is provided for vertically moving and rotating the rod-shaped silicon single crystal 12. Further, a gas discharge port 24 for discharging the gas in the furnace is provided at the upper part of the furnace 13. In FIG. 1, the upper shaft 21 serving as the rotation center of the silicon raw material rod 11 and the lower shaft 22 serving as the rotation center of the silicon single crystal 12 are provided on the same axis, but the upper shaft 21 and the lower shaft 22 are shifted. Single crystal can be grown. When both centers are shifted in this way, the melted part is stirred during the single crystallization, and the quality of the produced single crystal can be made uniform. The amount of eccentricity is appropriately set according to the diameter of the single crystal.

  A gas supply port 16 for supplying a mixed gas of nitrogen and argon is provided in a furnace wall in the vicinity of the induction heating coil 14, for example, a furnace wall at substantially the same level as the induction heating coil 14. The mixed gas introduced into the furnace from the gas supply port 16 is supplied not only to the slits but also to the red hot silicon raw material rod 11 near the floating zone.

  A high frequency oscillator 25 is provided outside the furnace 13, and its output is connected to a pair of power supply terminals (not shown) of the induction heating coil 14. In addition, a high-purity argon gas source and a nitrogen gas source are provided outside the furnace 13. A main supply pipe 26 is connected to the argon gas source, and the main supply pipe 26 is connected to the gas supply port 16 facing the furnace 13. The main supply pipe 26 is provided with a flow meter 27. The flow meter 27 is set so that an argon gas in a range of, for example, 10 to 50 L / min flows. Further, a first supply pipe 31 and a second supply pipe 32 branched from the first supply pipe 31 are connected to the nitrogen gas source. The first supply pipe 31 and the second supply pipe 32 are merged and connected to the main supply pipe 26. The first supply pipe 31 is piped to supply nitrogen gas to prevent discharge at the slit of the induction heating coil 14, and the second supply pipe 32 supplies nitrogen gas to suppress the generation of crystal defects. Piping to be done. The first supply pipe 31 is provided with an electromagnetic valve 33 and a flow meter 34 for measuring the flow rate of nitrogen gas in the first supply pipe. The second supply pipe 32 is provided with a flow rate of nitrogen gas in the electromagnetic valve 36 and the second supply pipe. A flow meter 37 for measuring is provided. The flow meter 34 of the first supply pipe 31 is set so that, for example, nitrogen gas in the range of 1 to 50 mL / min flows, and the flow meter 37 of the second supply pipe 32 is, for example, nitrogen in the range of 0 to 100 mL / min. The gas is set to flow. A control output of the control unit 40 is connected to the electromagnetic valves 33 and 36. A mass flow meter may be used instead of the flow meters 27, 34, and 37 described above. When supplying the defect elimination nitrogen gas through the second supply pipe 32, the supply amount or supply time of the defect elimination nitrogen gas is changed according to the diameter of the single crystal to be produced, or the diameter of the silicon raw material rod is changed. Accordingly, it is preferable to change the supply amount or supply time of the nitrogen gas for eliminating defects. Specifically, as the diameter of the single crystal increases, the supply amount of the nitrogen gas is increased or the supply time is lengthened. Even if the diameter of the single crystal to be produced is not increased, it is necessary to reduce the supply amount of nitrogen gas or shorten the supply time as the diameter of the silicon raw material rod is increased. By doing so, the amount of nitrogen taken into the single crystal can be adjusted to a desired value.

  A silicon single crystal manufacturing method using the FZ single crystal manufacturing apparatus 10 configured as described above will be described. First, the part where the silicon raw material rod 11 starts melting is processed into a cone shape, and the surface is etched to remove the processing distortion. Thereafter, the silicon raw material rod 11 is accommodated in the furnace 13 of the single crystal manufacturing apparatus 10 by the FZ method shown in FIG. 1, and the silicon raw material rod 11 is placed on the upper holding jig 17 of the upper shaft 21 installed in the furnace 13. Secure with screws. On the other hand, a seed crystal 18 having a target crystal orientation made of a silicon single crystal is attached to the lower holding jig 19 of the lower shaft 22.

  Next, a high-frequency current is caused to flow through the induction heating coil 14 by the high-frequency oscillator 25 while introducing a predetermined flow rate of argon gas measured by the flow meter 27 from the main supply pipe 26 into the furnace 13. One end is melted, and the seed crystal 18 is fused to the melt. Thereafter, a narrowed portion 15 is formed by seed drawing to eliminate dislocation, and a single crystal is grown while solidifying molten silicon. While rotating the upper shaft 21 and the lower shaft 22 in directions opposite to each other, the silicon raw material rod 11 is moved relative to the induction heating coil 14 in the axial direction, and at the same time, the melting portion is moved from the fusion portion to the silicon raw material rod 11. Single crystallized by gradually moving toward the edge. Subsequently, by lowering the silicon raw material rod 11 and the silicon single crystal 12 thus produced, a floating zone 12a is formed between the silicon raw material rod 11 and the rod-shaped silicon single crystal 12, and this floating zone 12a is formed on the silicon raw material rod 11. The silicon single crystal 12 is grown at a constant speed, for example, a constant speed within a range of 1 to 4 mm / min.

During the growth of the silicon single crystal 12, a mixed gas of nitrogen and argon is supplied into the furnace 13 from the main supply pipe 26 and the gas supply port 16. Nitrogen to be incorporated into the single crystal to be grown in advance by a calculation formula based on the nitrogen concentration for discharge prevention, the nitrogen concentration for defect elimination, the nitrogen segregation coefficient, the diameter of the silicon single crystal, the zone length, the diameter of the silicon raw material rod, etc. It is possible to predict the concentration. Based on this calculation formula, the nitrogen concentration in the straight body portion of the silicon single crystal is in the range of 2.0 × 10 ¹⁴ atoms / cm ^{3 to} 4.0 × 10 ¹⁵ atoms / cm ³ , preferably 4.0 × 10. The concentration and supply time of the discharge preventing nitrogen and the defect extinguishing nitrogen are determined so as to be in the range of ¹⁴ atoms / cm ³ or more and 1.0 × 10 ¹⁵ atoms / cm ³ or less. If it is less than 2.0 × 10 ¹⁴ atoms / cm ³ , the doping amount of nitrogen is too small and void defects remain in the silicon single crystal. Further, when the doping amount of nitrogen exceeds 4.0 × 10 ¹⁵ atoms / cm ³ , there is a problem that the silicon single crystal is dislocated.

  Next, supply of a mixed gas of nitrogen and argon from the start to the end of the growth of the silicon single crystal will be described in detail. First, necessary data such as a crystal feed rate and a crystal diameter after the growth is started is input to the control unit 40. Since the growth rate is set in advance, the growth length (crystal length) of the silicon single crystal can be calculated from the growth time. When the control unit 40 determines that the top cone portion of the silicon single crystal is formed, the silicon single crystal is the target for both the electromagnetic valve 33 of the first supply pipe 31 and the electromagnetic valve 36 of the second supply pipe 32. Open until the crystal diameter is reached. Nitrogen gas having a flow rate determined in advance by the flow meters 34 and 37 flows into the main supply pipe 26. The nitrogen concentration in the mixed gas at this time is adjusted to 0.05 to 0.7% with respect to 100% of the argon gas flow rate. As a result, the gas supply port 16 supplies a mixed gas containing an amount of nitrogen gas sufficient to prevent discharge in the slit of the induction heating coil 14 and a nitrogen gas amount sufficient to prevent void defects due to nitrogen doping. . At the stage of starting to form the top cone portion in the initial stage of growth, the electromagnetic valve 36 of the second supply pipe 32 is closed and only the electromagnetic valve 33 of the first supply pipe 31 is opened in order to prevent excessive nitrogen concentration in the initial stage of growth. May be.

When the control unit 40 determines that the silicon single crystal has reached the target crystal diameter and the growth of the straight body portion is started from the top cone portion of the silicon single crystal, only the electromagnetic valve 36 of the second supply pipe 32 is determined. Close and keep the solenoid valve 33 of the first supply pipe 31 open. Until the growth of the silicon single crystal is completed, that is, until the bottom cone portion is formed, the control unit 40 maintains the “open” state of the electromagnetic valve 33 and the “closed” state of the electromagnetic valve 36. A nitrogen gas having a flow rate determined in advance by the flow meter 34 flows into the main supply pipe 26. If the growth is continued, nitrogen continues to be supplied, but the supply of nitrogen gas from the second supply pipe 32 is stopped or the supply amount of nitrogen gas from the first supply pipe 31 is reduced, thereby An increase in nitrogen concentration in the silicon melt is suppressed. When reducing the supply amount of nitrogen gas from the first supply pipe 31, it is preferable to adjust the supply amount of nitrogen gas at the end of the straight body portion to be smaller than the supply amount at the start end of the straight body portion. At this time, the nitrogen concentration with respect to 100% of the argon gas flow rate in the mixed gas is adjusted to 0.05 to 0.1%. As described above, the nitrogen concentration of the silicon single crystal falls within the range of 2.0 × 10 ¹⁴ atoms / cm ³ or more and 4.0 × 10 ¹⁵ atoms / cm ³ or less. It is set to make the nitrogen concentration uniform. The mixed gas introduced into the furnace 13 is exhausted from a gas discharge port 24 at the top of the furnace 13.

  By the opening / closing control of the electromagnetic valves 33 and 36 in the control unit 40 described above, the total nitrogen gas supply amount by the first supply pipe 31 and the second supply pipe 32 does not cause the nitrogen concentration in the bottom cone side straight body part to be too high. To be adjusted.

  Next, examples of the present invention will be described in detail together with comparative examples. Each silicon single crystal of Examples and Comparative Examples described below is grown experimentally.

<Comparative Example 1>
A single crystal manufacturing apparatus 10 shown in FIG. 1 was used to grow a silicon single crystal 12 having a diameter of 100 mm by FZ method using a silicon polycrystal rod as the silicon raw material rod 11. The pressure in the furnace 13 was set to a predetermined pressure, and the electromagnetic valve 33 of the first supply pipe 31 continued to open from the start to the end of the growth. When the flow rate of the argon gas flowing through the main supply pipe 26 that has passed through the flow meter 27 is 100%, the nitrogen gas whose flow rate is adjusted to 0.1% by the flow meter 34 of the first supply pipe 31 is used as the argon gas. The mixed gas was supplied from the gas supply port 16 into the furnace. That is, the nitrogen gas concentration in the mixed gas for preventing discharge at the slit of the induction heating coil 14 was set to 0.1%. At the initial stage of growth, the electromagnetic valve 36 of the second supply pipe 32 was closed, and only the electromagnetic valve 33 of the first supply pipe 31 was opened. The electromagnetic valve of the second supply pipe 32 in addition to the opening of the electromagnetic valve 33 of the first supply pipe 31 for the purpose of eliminating void defects at the growth stage of the top cone portion where the crystal length (taper length) reaches a certain crystal diameter. 36 was opened. Nitrogen gas was added so that the nitrogen dope concentration with respect to 100% of the argon gas flow rate passing through the flow meter 37 of the second supply pipe 32 was 0.4%. That is, the nitrogen concentration in the mixed gas was set to 0.5%. With the electromagnetic valve 36 of the second supply pipe 32 opened, the nitrogen doping time was controlled. The state where the solenoid valve 36 of the second supply pipe 32 is closed and only the solenoid valve 33 of the first supply pipe 31 is opened at the stage where the formation of the top cone portion is completed and the transition is made to the straight body portion having the target crystal diameter. A silicon single crystal was grown. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 30 minutes. While growing from the start end to the end of the straight body portion, the electromagnetic valve 33 of the first supply pipe 31 was kept open so that the nitrogen dope concentration with respect to the argon gas flow rate of 100% was constant at 0.1%. The above-described silicon single crystal was grown three times under the same conditions.

<Comparative example 2>
Similar to Comparative Example 1, the electromagnetic valve 33 of the first supply pipe 31 continued to open from the start to the end of the growth. The difference from Comparative Example 1 is that the ratio of the nitrogen dope flow rate to the argon gas flow rate of 100% passing through the flow meter 37 of the second supply pipe 32 when the electromagnetic valve 36 of the second supply pipe 32 is opened is 0.55%. Nitrogen gas was added so that That is, the nitrogen concentration in the mixed gas was set to 0.65%. In addition, at the stage where the formation of the top cone portion is completed and the process shifts to the straight body portion where the target crystal diameter is 100 mm, the electromagnetic valve 36 of the second supply pipe 32 is closed and only the electromagnetic valve 33 of the first supply pipe 31 is closed. Opened. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 30 minutes. Otherwise, the silicon single crystal described above was grown three times under the same conditions as in Comparative Example 1.

<Example 1>
As a difference from Comparative Example 1, first, the raw material mass was increased so that the length of the straight body portion was 108 when Comparative Example 1 was set to 100. Also, nitrogen gas is added so that the nitrogen doping flow rate ratio with respect to 100% of the argon gas flow rate passing through the flow meter 37 of the second supply pipe 32 when the electromagnetic valve 36 of the second supply pipe 32 is opened is 0.55%. It was. That is, the nitrogen concentration in the mixed gas was set to 0.65%. Further, at the stage where the formation of the top cone portion is completed and the process shifts to the straight body portion where the target crystal diameter is 100 mm, the electromagnetic valve 36 of the second supply pipe 32 is closed, and only the electromagnetic valve 33 of the first supply pipe 31 is closed. The silicon single crystal is grown in an open state, but in order to suppress an increase in the nitrogen concentration in the longitudinal direction of the straight cylinder, the nitrogen concentration is set to 0.1% at the growth stage at the start of the straight cylinder, and from there the end of the straight cylinder The degree of opening of the electromagnetic valve 33 of the first supply pipe 31 was gradually reduced so that the nitrogen concentration became 0.05% at the time of growth. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 30 minutes. Otherwise, the silicon single crystal described above was grown three times under the same conditions as in Comparative Example 1.

<Example 2>
As a difference from Comparative Example 1, first, the raw material mass was increased so that the length of the straight body portion was 108 when Comparative Example 1 was set to 100. Also, nitrogen gas is added so that the nitrogen doping flow rate ratio to 0.5% of the argon gas flow rate passing through the flow meter 37 of the second supply pipe 32 when the electromagnetic valve 36 of the second supply pipe 32 is opened is 0.5%. It was. That is, the nitrogen concentration in the mixed gas was set to 0.6%. Further, at the stage where the formation of the top cone portion is completed and the process shifts to the straight body portion where the target crystal diameter is 100 mm, the electromagnetic valve 36 of the second supply pipe 32 is closed, and only the electromagnetic valve 33 of the first supply pipe 31 is closed. The silicon single crystal is grown in an open state, but in order to suppress an increase in the nitrogen concentration in the longitudinal direction of the straight cylinder, the nitrogen concentration is set to 0.1% at the growth stage at the start of the straight cylinder, and from there the end of the straight cylinder The degree of opening of the electromagnetic valve 33 of the first supply pipe 31 was gradually reduced so that the nitrogen concentration became 0.05% at the time of growth. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 25 minutes. Otherwise, the silicon single crystal described above was grown three times under the same conditions as in Comparative Example 1.

<Example 3>
As a difference from Comparative Example 1, first, the raw material mass was increased so that the length of the straight body portion was 108 when Comparative Example 1 was set to 100. Further, nitrogen gas is added so that the nitrogen doping flow rate ratio to 0.6% of the argon gas flow rate passing through the flow meter 37 of the second supply pipe 32 when the electromagnetic valve 36 of the second supply pipe 32 is opened is 0.6%. It was. That is, the nitrogen concentration in the mixed gas was set to 0.7%. Further, at the stage where the formation of the top cone portion is completed and the process shifts to the straight body portion where the target crystal diameter is 100 mm, the electromagnetic valve 36 of the second supply pipe 32 is closed, and only the electromagnetic valve 33 of the first supply pipe 31 is closed. The silicon single crystal is grown in an open state, but in order to suppress an increase in the nitrogen concentration in the longitudinal direction of the straight cylinder, the nitrogen concentration is set to 0.1% at the growth stage at the start of the straight cylinder, and from there the end of the straight cylinder The degree of opening of the electromagnetic valve 33 of the first supply pipe 31 was gradually reduced so that the nitrogen concentration became 0.05% at the time of growth. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 35 minutes. Otherwise, the silicon single crystal described above was grown three times under the same conditions as in Comparative Example 1.

<Example 4>
As a difference from Comparative Example 1, first, the raw material mass was increased to a ratio of 108 when the length of the straight body part was 100 as Comparative Example 1, and the diameter of the straight body part was increased to 125 mm. . Further, nitrogen gas is added so that the nitrogen doping flow rate ratio with respect to 100% of the argon gas flow rate passing through the flow meter 37 of the second supply pipe 32 when the electromagnetic valve 36 of the second supply pipe 32 is opened is 0.57%. It was. That is, the nitrogen concentration in the mixed gas was set to 0.67%. Further, at the stage where the formation of the top cone portion is completed and the process shifts to the straight body portion where the target crystal diameter is 125 mm, the electromagnetic valve 36 of the second supply pipe 32 is closed, and only the electromagnetic valve 33 of the first supply pipe 31 is closed. The silicon single crystal is grown in an open state, but in order to suppress an increase in the nitrogen concentration in the longitudinal direction of the straight cylinder, the nitrogen concentration is set to 0.1% at the growth stage at the start of the straight cylinder, and from there the end of the straight cylinder The degree of opening of the electromagnetic valve 33 of the first supply pipe 31 was gradually reduced so that the nitrogen concentration became 0.05% at the time of growth. The opening time (nitrogen doping time) of the electromagnetic valve 36 of the second supply pipe 32 was 40 minutes. Otherwise, the silicon single crystal described above was grown three times under the same conditions as in Comparative Example 1.

  Table 1 shows the growth conditions of Examples 1 to 4 and Comparative Examples 1 and 2 and the production rate of the silicon single crystal straight body part.

<Comparison test and evaluation>
(1) Calculation of productization rate from void defect and dislocation generation part The rod-shaped silicon single crystal grown in Example 1 and Comparative Examples 1 to 3 was used for each of the top cone part, the straight body part, and the bottom cone part. A sample silicon wafer was fabricated by slicing each part in a direction perpendicular to the axis. The presence or absence of void defects in these silicon wafers is measured by flow pattern evaluation by seco-etching and defect evaluation by infrared tomography evaluation (eg MO441 manufactured by Raytec), and the presence of dislocations is visually observed during growth. It was judged by doing. In the flow pattern evaluation method described above, a sample wafer produced by slicing an ingot is left without swinging in a selective etching (seco etching) solution, thereby forming a ripple pattern (flow pattern) around the defect. This is a simple evaluation method that reveals defects.

  In the top cone side straight body portion of Comparative Example 1, void defects were observed, and this portion could not be used as a product, which caused a reduction in the productization rate. Moreover, in order to eliminate this problem, when the nitrogen concentration in the single crystal of the top cone portion was increased in Comparative Example 2, it was possible to eliminate void defects, but in the bottom cone side straight body portion. When the nitrogen concentration in the single crystal increases too much, dislocations occur in this part, causing a reduction in the productization rate. Therefore, the silicon wafer of each sample obtained from the top cone side straight body portion of the silicon single crystals of Examples 1 to 4 in which both problems were solved and the raw material mass was increased showed no void defect, and the bottom cone Even at the time of switching from the side straight body portion to the bottom cone portion, dislocation was suppressed, and as a result, the productization rate could be increased. Although the average value of the product yield of each of the three silicon single crystals of Comparative Examples 1 and 2 was 91% and 93%, respectively, the product yield of each of the three silicon single crystals of Examples 1 to 4 The average values were 100%, 98%, 96% and 100%, respectively.

(2) Nitrogen concentration distribution The silicon wafers of Examples 1 to 4 and Comparative Examples 1 and 2 examined for the presence of void defects and dislocations in (1) above are incorporated into the silicon wafer. The nitrogen concentration was grasped. Specifically, the change in the nitrogen concentration in the crystal according to the crystal length of the silicon single crystal is expressed as the nitrogen concentration for discharge prevention, the nitrogen concentration for defect elimination, the nitrogen segregation coefficient, the diameter of the silicon single crystal, the zone length, the silicon The graph was drawn from a calculation formula calculated based on the diameter of the raw material rod. This calculation formula has been confirmed to agree with the actual measurement value (SIMS measurement) of the nitrogen concentration. The results are shown in FIGS. 2 to 4, the horizontal axis indicates the crystal length. The vertical axis represents the concentration of nitrogen contained in the wafer when the silicon single crystal is sliced into a silicon wafer after growth. 2 indicates Comparative Example 1, the broken line in FIG. 3 indicates Comparative Example 1, the alternate long and short dash line indicates Comparative Example 2, and the three solid lines in FIG. 4 indicate Examples 1 to 3, respectively. 2 to 4, the symbol A indicates the crystal length when the crystal diameter reaches the target diameter and shifts to the straight body portion (at the start of the straight body portion), and the symbol B indicates the bottom cone from the straight body portion. The crystal length at the time of transition to the part (at the end of the straight body part) is shown. In addition, since the nitrogen concentration in the single crystal is less than the target value in the X portion and the nitrogen concentration in the single crystal exceeds the target value, the Y portion indicates a portion that cannot be obtained as a product.

As shown in FIG. 2, in the silicon single crystal of Comparative Example 1 grown without changing the nitrogen concentration in the mixed gas during the growth, the nitrogen concentration at the time when the bottom cone side straight body end reached (time B) was 4 0.0 × 10 ¹⁵ atoms / cm ³ , and no dislocation was observed in the bottom cone side straight body, but the nitrogen concentration at the time when the target crystal diameter was reached (time A) was 1.8 × 10 ^14, respectively. a atoms / cm ^3, the nitrogen concentration of the a point later in the top cone side straight body until the 2.0 × ¹⁰ 14 atoms / cm ³ void defects occur (see X portion of FIG. 2) . As shown in FIG. 3, in the silicon single crystal of Comparative Example 2, the nitrogen concentration when the target crystal diameter was reached (time A) was 3.0 × 10 ¹⁴ atoms / cm ³ , and the top cone after time A was reached. Although no void defect was found in the side straight barrel portion, dislocation occurred in the bottom cone side straight barrel portion (before reaching time B) (see the Y portion in FIG. 3). Further, the nitrogen concentration of the silicon wafer in the bottom cone side straight body portion obtained from the position returned by the slip back was 3.9 × 10 ¹⁵ atoms / cm ³ , and it was considered that the nitrogen concentration in the dislocation portion was excessive.

On the other hand, as shown in FIG. 4, the total supply amount of nitrogen gas by the first supply pipe and the second supply pipe is set so that the supply amount at the end of the straight body portion is smaller than the supply amount at the start portion of the straight body portion. In the silicon single crystals of Examples 1 to 3 that were adjusted and the nitrogen concentration in the straight body portion was suppressed, the nitrogen concentration in the straight body portion (from time A to time B) was 2.0 × 10 ¹⁴ atoms / cm ^3. As described above, it was within the range of 4.0 × 10 ¹⁵ atoms / cm ³ or less, and neither void defect nor single crystal dislocation was observed. In particular, in the silicon single crystal of Example 1, the preferable nitrogen concentration in the straight body portion (from time A to time B) is 4.0 × 10 ¹⁴ atoms / cm ³ or more and 1.0 × 10 ¹⁵ atoms / cm ³ or less. It was inside. Although the silicon single crystal of Example 4 is not shown, by supplying nitrogen gas under the growth conditions shown in Table 1, a nitrogen concentration distribution that is the same as that of Example 1 can be obtained in the crystal axis direction. .

DESCRIPTION OF SYMBOLS 10 Single crystal manufacturing apparatus 11 Silicon raw material stick | rod 12 Silicon single crystal 12a Floating zone 13 Furnace 14 Induction heating coil 16 Gas supply port 24 Gas discharge port

  The method of the present invention is used for the production of a silicon single crystal having no crystal defects such as dislocations and void defects in an elongated silicon single crystal accompanying an increase in the amount of silicon raw material charged.

Claims (7)

A method for producing a silicon single crystal by supplying a mixed gas of nitrogen and argon into a furnace when producing a silicon single crystal using a single crystal production apparatus by a floating zone melting method,
During the growth of the silicon single crystal, the nitrogen concentration in the mixed gas is changed so that the nitrogen concentration in the straight body portion of the silicon single crystal is 2.0 × 10 ¹⁴ atoms / cm ³ or more and 4.0 × 10 ¹⁵ atoms / cm. ^A method for producing a silicon single crystal, comprising growing the silicon single crystal so as to fall within a range of ³ or less.   2. The silicon according to claim 1, wherein when the straight body portion of the silicon single crystal is grown, the supply amount of nitrogen gas at the end of the straight body portion is adjusted to be smaller than the supply amount at the start end of the straight body portion. A method for producing a single crystal.   The single crystal manufacturing apparatus includes at least first and second supply pipes for supplying nitrogen gas, and supplies the nitrogen gas into the furnace through the first and / or second supply pipes. Or the manufacturing method of the silicon single crystal of 2.   The method for producing a silicon single crystal according to claim 3, wherein the supply of nitrogen gas through the second supply pipe is performed only in a top cone portion of the single crystal.   5. The method for producing a silicon single crystal according to claim 3, wherein the amount of nitrogen taken into the single crystal is adjusted by changing a supply amount of nitrogen gas from the second supply pipe according to the single crystal diameter.   6. The silicon single crystal according to claim 3, wherein the amount of nitrogen taken into the single crystal is adjusted by changing a supply time of the nitrogen gas from the second supply pipe in accordance with the single crystal diameter. Production method. An apparatus for producing a silicon single crystal by a floating zone melting method,
Silicon having two or more supply pipes for supplying nitrogen gas into the furnace, and wherein the two or more supply pipes are configured to independently adjust the supply amount of nitrogen gas into the furnace. Single crystal manufacturing equipment.

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