JP2017102257A - Control apparatus and method, exposure apparatus and method, device manufacturing method, data generating method, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control a spatial light modulator so as to preferably transfer a prescribed pattern onto an object.SOLUTION: The control method is a method for controlling a spatial light modulator that includes a first and a second optical elements capable of changing respective states thereof. The method includes: setting first drive information for driving the first optical element to a first state; and changing the first drive information by using information regarding the state of the second optical element.SELECTED DRAWING: Figure 5

Description

  Control apparatus and control method for determining respective states of a plurality of optical elements provided in spatial light modulator, exposure apparatus and exposure method using this control method, device manufacturing method using this exposure method, spatial light modulator The present invention relates to a data generation method for generating control data, and a technical field of a program for executing such a control method or data generation method.

  An exposure apparatus including a spatial light modulator (SLM) having a plurality of optical elements (for example, micromirrors) capable of reflecting incident light instead of a mask has been proposed (Patent Document 1). reference). Furthermore, an exposure apparatus including a spatial light modulator having a plurality of optical elements (for example, liquid crystal elements) each capable of transmitting incident light has also been proposed (see Patent Document 1).

International Publication No. 2006/083585 Pamphlet

  A first aspect is a control method for controlling a spatial light modulator which is used in an apparatus for transferring a pattern to an object and includes first and second optical elements whose states can be changed. A control method includes setting first drive information for setting to a first state and changing the first drive information using the information related to the state of the second optical element.

  A second aspect is a method for controlling a spatial light modulator, wherein each of the plurality of optical elements included in the spatial light modulator that modulates and emits incident light is set. Using the information regarding the state of at least one optical element and identifying the state of at least one optical element, the optical element is located at a position separated from the at least one optical element by a predetermined distance. Setting a state of another optical element that performs the control.

  According to a third aspect of the present invention, there is provided a spatial light modulator control method for setting each state of a plurality of optical elements included in a spatial light modulator that modulates and emits incident light to transfer a desired pattern onto an object. Obtaining information on a change in a transfer state of the desired pattern when the state of at least one of the plurality of optical elements is changed, and using the information, the at least one Setting a state of the optical element.

  According to a fourth aspect of the present invention, there is provided a control device that controls a spatial light modulator that is used together with a device that transfers a pattern to an object, and that includes first and second optical elements whose states can be changed. An input unit to which information on a state is input; and a controller that generates a drive signal for setting a state of the first and second optical elements to a predetermined state. The controller includes the first optical element. It is a control device that sets first drive information for changing to the first state and changes the first drive information using the information related to the state of the second optical element.

  A fifth aspect is a control device for controlling a spatial light modulator including first and second optical elements whose states can be changed, and executes the control method according to any one of the first to third aspects. Thus, the control device sets the respective states of the first and second optical elements.

  A sixth aspect includes a spatial light modulator and a controller that controls the spatial light modulator, and the controller executes the control method according to any one of the first to third aspects to thereby execute the spatial light modulator. It is an exposure apparatus that determines the state of each of the first and second optical elements provided in the modulator.

  A seventh aspect is an exposure method for exposing a pattern to an object, and states of the first and second optical elements included in the spatial light modulator using the control method according to any one of the first to third aspects. And exposing the object using light exposure via the spatial light modulator.

  In an eighth aspect, using the exposure method of the seventh aspect, the object coated with a photosensitive agent is exposed, a desired pattern is transferred to the object, and the exposed photosensitive agent is developed. In the device manufacturing method, an exposure pattern layer corresponding to the desired pattern is formed, and the object is processed through the exposure pattern layer.

  A ninth aspect is a data generation method for generating control data of a spatial light modulator that is used together with an exposure apparatus that transfers a desired pattern to an object and includes first and second optical elements whose states can be changed. Then, the first drive information for setting the first optical element to the first state is set, and the first drive information is changed by using the information on the state of the second optical element to change the second drive information. A data generation method including generating drive information and generating setting data indicating the state of the first optical element included in the spatial light modulator as the control data from the second drive information.

  A tenth aspect is a data generation method for generating control data of a spatial light modulator provided in an exposure apparatus that transfers a desired pattern to an object, wherein the first information regarding the desired pattern is obtained; Obtaining second information relating to characteristics of the optical modulator, and using the first information and the second information, setting data indicating respective states of a plurality of optical elements included in the spatial light modulator is controlled. A data generation method including generating as data.

  An eleventh aspect is a program for causing a controller connected to the spatial light modulator and changing the state of each of the plurality of optical elements to execute the control method according to any one of the first to third aspects.

  A twelfth aspect is a program that causes a computer to execute the data generation method according to the ninth or tenth aspect.

  The effect | action of the said aspect and another gain are clarified from the form for implementing demonstrated below.

FIG. 1 is a side view showing an example of the structure of the exposure apparatus of the present embodiment. FIG. 2A is a plan view showing the structure of the light modulation surface of the spatial light modulator, and FIG. 2B is a perspective view showing the structure of a part of the light modulation surface of the spatial light modulator. 2 (c) is a perspective view showing the configuration of one mirror element of the spatial light modulator, and FIG. 2 (d) is a side view showing two states that the mirror element included in the spatial light modulator can take. FIG. FIG. 3A is a plan view showing an example of the movement path of the exposure region on the surface of the wafer, and each of FIGS. 3B and 3C is an example of the state distribution of a plurality of mirror elements. FIG. FIG. 4A is a block diagram illustrating the structure of the pattern design apparatus, and FIGS. 4B and 4C are block diagrams illustrating examples of the installation positions of the pattern design apparatus. FIG. 5 is a flowchart showing the flow of the pattern design operation performed by the pattern design apparatus. FIGS. 6A and 6B are plan views showing mirror groups that define a first specific example of design variables related to the spatial light modulator, respectively. FIG. 7A is a side view showing the basic structure of the simulation model of the spatial light modulator, and FIG. 7B and FIG. 7C are simulation models used for specifying the reflection amplitude, respectively. It is a side view which shows an example. FIG. 8A and FIG. 8B are graphs showing the reflectance of a mirror group including two mirror elements adjacent in the Y-axis direction and a gap positioned between the two mirror elements, respectively. is there. FIG. 9A is a graph showing the reflection amplitude expressed on the complex plane, and FIGS. 9B to 9D are used to specify the reflection amplitude expressed by complex numbers, respectively. It is a top view which shows an example of the mirror group used. FIG. 10A and FIG. 10B each include two mirror elements that are adjacent along the Y-axis direction, and a gap that is adjacent to the two mirror elements and located between the two mirror elements. It is a graph which shows the reflectance of a mirror group. FIG. 11A to FIG. 11D are plan views showing mirror groups that define a fourth specific example of design variables related to the spatial light modulator. FIG. 12A is a plan view showing a mirror group that defines a fifth specific example of design variables related to the spatial light modulator, and FIG. 12B shows four mirror elements that constitute the mirror group. It is a table | surface which shows the combination of the state which can take. FIG. 13 is a plan view showing a mirror group that defines a sixth specific example of design variables related to the spatial light modulator. FIG. 14 is a plan view showing a state distribution of a plurality of mirror elements included in the spatial light modulator. FIG. 15 is a flowchart illustrating a method for manufacturing a microdevice.

  Hereinafter, a control apparatus and a control method, an exposure apparatus and an exposure method, a device manufacturing method, a data generation method, and a program according to embodiments will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below.

  In the following description, the positional relationship between various components constituting the exposure apparatus will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X, Y, and Z axes. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in the horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). Yes, in the vertical direction). Further, the rotation directions around the X axis, the Y axis, and the Z axis (in other words, the tilt direction) are referred to as a θX direction, a θY direction, and a θZ direction, respectively.

(1) Exposure apparatus 1
The exposure apparatus 1 of the present embodiment will be described with reference to FIGS.

(1-1) Structure of the exposure apparatus 1 First, the structure of the exposure apparatus 1 of the present embodiment will be described with reference to FIG. FIG. 1 is a side view showing an example of the structure of the exposure apparatus 1 of the present embodiment.

  As shown in FIG. 1, the exposure apparatus 1 includes a light source 11, an illumination optical system 12, a mirror 13, a spatial light modulator (SLM) 14, a projection optical system 15, and a wafer stage 16. And a controller 17.

  The light source 11 is controlled by the controller 17 and emits exposure light EL1. The light source 11 emits pulsed light that repeats blinking at a predetermined frequency as the exposure light EL1. That is, the light source 11 emits pulsed light emitted at a predetermined frequency at a predetermined light emission time (hereinafter, the light emission time is referred to as “pulse width”). For example, the light source 11 may emit pulsed light with a pulse width of 50 ns at a frequency of 4 kHz to 6 kHz. The exposure light EL1 pulsed from the light source 11 may be ArF excimer laser light having a wavelength of 193 nm.

  For example, as disclosed in US Pat. No. 8,792,081, the illumination optical system 12 includes an illuminance uniformizing optical system having an optical integrator such as a fly-eye lens or a rod-type integrator, and an illumination field stop (whichever (Not shown) may also be included. The illumination optical system 12 equalizes the amount of exposure light from the light source 11 and emits it as exposure light EL2. The light modulation surface 14a of the spatial light modulator 14 is illuminated by the exposure light EL2. A rectangular illumination area defined by the illumination field stop (masking system) of the illumination optical system 12 is formed on the light modulation surface 14a of the spatial light modulator.

  The illumination optical system 12 may include a beam intensity distribution changing unit that changes the intensity distribution of the exposure light EL2 on the light modulation surface 14a.

  The mirror 13 deflects the exposure light EL <b> 2 output from the illumination optical system 12 and guides it to the light modulation surface 14 a of the spatial light modulator 14.

  As will be described later, the spatial light modulator 14 includes a plurality of mirror elements 141 arranged two-dimensionally. Here, the surface on which the plurality of mirror elements 141 are arranged is referred to as a light modulation surface 14a. The light modulation surface 14a is irradiated with exposure light EL2 propagating from the illumination optical system 12 via the mirror 13. The light modulation surface 14a is a plane parallel to the XY plane and intersects the traveling direction of the exposure light EL2. The light modulation surface 14a has a rectangular shape. The exposure light EL2 illuminates the light modulation surface 14a with a substantially uniform illuminance distribution.

  The spatial light modulator 14 reflects the exposure light EL <b> 2 irradiated on the light modulation surface 14 a of the spatial light modulator 14 toward the projection optical system 15. When the exposure light EL2 is reflected, the spatial light modulator 14 spatially modulates the exposure light EL2 according to the device pattern to be transferred to the wafer 161. Here, “spatial modulation of light” means the amplitude (intensity) of the light, the phase of the light, the polarization state of the light, the wavelength of the light, and the direction of travel of the light (in other words, in other words, in the cross-section crossing the light traveling direction It may mean that the distribution of the optical characteristic which is at least one of the deflection states is changed. In the present embodiment, the spatial light modulator 14 is a reflective spatial light modulator.

  Next, the spatial light modulator 14 will be further described with reference to FIGS. 2 (a) to 2 (c). FIG. 2A is a plan view showing the structure of the light modulation surface 14 a of the spatial light modulator 14. FIG. 2B is a perspective view showing a partial structure of the light modulation surface 14 a of the spatial light modulator 14. FIG. 2C is a side view showing two states that the mirror element 141 included in the spatial light modulator 14 can take.

  As shown in FIGS. 2A and 2B, the spatial light modulator 14 includes a plurality of mirror elements 141. Note that FIG. 2B is a drawing in which a part of the plurality of mirror elements 141 shown in FIG. The plurality of mirror elements 141 are arranged in a two-dimensional array (in other words, in a matrix) on the XY plane, which is a plane parallel to the light modulation surface 14a. For example, the number of arrays of the plurality of mirror elements 141 along the Y-axis direction is several hundred to several thousand. For example, the number of arrangement of the plurality of mirror elements 141 along the X-axis direction is several to several tens of times the number of arrangement of the plurality of mirror elements 141 along the Y-axis direction. An example of the number of arrangement of the plurality of mirror elements 141 along the Y-axis direction is several hundred to several thousand. The plurality of mirror elements 141 are arranged so as to have a predetermined arrangement interval px along the X-axis direction and a predetermined arrangement interval py along the Y-axis direction. An example of the arrangement interval px is, for example, 10 micrometers to 1 micrometer. An example of the arrangement interval py is, for example, 10 micrometers to 1 micrometer.

  Each mirror element 141 has a square shape. The size of each mirror element 141 in the X-axis direction and the Y-axis direction is smaller than the above-described arrangement intervals px and py, respectively, because the position and / or posture of each mirror element 141 is changed. That is, a gap 142 that does not constitute the mirror element 141 exists between the two mirror elements 141 adjacent in the X-axis direction and between the two mirror elements 141 adjacent in the Y-axis direction. In other words, considering the change in the position and / or orientation of each mirror element 141, the size of each mirror element 141 in the X-axis direction and the Y-axis direction is the same as the above-described arrangement intervals px and py (that is, It is estimated that it is technically difficult to manufacture each mirror element 141 so that there is no gap 142). For this reason, in the following, the description will be made using the spatial light modulator 14 in which the size of each mirror element 141 in the X-axis direction and the Y-axis direction is smaller than the arrangement intervals px and py described above. However, the shape and size of each mirror element 141 may be arbitrary (for example, the size of each mirror element 141 in the X-axis direction and the Y-axis direction may be substantially the same as the above-described arrangement intervals px and py). Good).

  Of each mirror element 141, the surface irradiated with the exposure light EL2 is a reflection surface 141a that reflects the exposure light EL2. Of the two surfaces parallel to the XY plane of each mirror element 141, the surface located on the −Z direction side is a reflecting surface 141a. For example, a reflective film is formed on the reflective surface 141a. As the reflective film of the reflective surface 141a, for example, a metal film or a dielectric multilayer film may be used. A set of the reflecting surfaces 141a of the plurality of mirror elements 141 substantially becomes the light modulation surface 14a irradiated with the exposure light EL2.

  As shown in FIG. 2C, each mirror element 141 of the spatial light modulator 14 is connected to the hinge part 144 by a first connection member 143. The hinge part 144 has flexibility capable of bending in the Z-axis direction using elastic deformation. The hinge portion 144 is supported by a pair of post portions 145 provided on the support substrate 142. In addition, the hinge part 144 is provided with a second connection part 147 that connects the anchor part 146 and the hinge part 144 that receive an action of electrostatic force (attraction or repulsion) by an electrode 148 described later. Thus, the anchor part 146 and the mirror element 141 are mechanically connected via the first connecting member 143, the second connecting member 17, and the hinge part 144. An electrode 148 is formed on the surface of the support substrate 149. Note that the post portions 145 are not limited to a pair, and may be two or more.

  When a predetermined voltage is applied to the electrode 148, an electrostatic force acts between the back surface of the anchor portion 146 and the electrode 148. As described above, when an electrostatic force is applied between the back surface of the anchor portion 146 and the electrode 148, the anchor portion 146 moves to the support substrate 149 side, and the mirror element 141 moves to the support substrate 149 side along with this movement. To do.

  The state of each mirror element 141 is along the direction orthogonal to the reflecting surface 141a (that is, the Z-axis direction) due to the electrostatic force acting between the anchor portion 146 and the electrode 148 and the elastic force of the hinge portion 144. Switch between two states with different positions. For example, as shown on the left side of FIG. 2D, when an electrostatic force is not acting between the anchor portion 146 and the electrode 148 (that is, when the hinge portion 144 is not bent), each mirror element 141 is a first state in which the reflecting surface 141a of each mirror element 141 coincides with the reference plane A1. For example, as shown on the right side of FIG. 2D, when an electrostatic force is acting between the anchor portion 146 and the electrode 148 (that is, when the hinge portion 144 is bent), each mirror element 141 represents a second state in which the reflecting surface 141a of each mirror element 141 coincides with a displacement plane A2 shifted by a distance d1 from the reference plane A1 toward the + Z direction.

  The reflective surface 141a of the mirror element 141 in the second state is at a position shifted by a distance d1 from the reflective surface 141a of the mirror element 141 in the first state toward the + Z direction side. Therefore, the phase of the wavefront of the exposure light EL3 obtained when the mirror element 141 in the second state reflects the exposure light EL2, and the mirror element 141 in the first state reflects the exposure light EL2. It is different from the wavefront phase of the exposure light EL3. This phase difference corresponds to a length twice the distance d1. In the present embodiment, the distance d1 is equal to ¼ of the wavelength λ of the exposure light EL1. That is, d1 is expressed by a mathematical formula d1 = λ / 4. In this case, the phase of the wavefront of the exposure light EL3 obtained by the mirror element 141 in the second state reflecting the exposure light EL2 is obtained by the mirror element 141 in the first state reflecting the exposure light EL2. Compared with the phase of the wavefront of the exposure light EL3, it differs by 180 degrees (π radians). In the following, for convenience of explanation, the first state is referred to as “0 state” and the second state is referred to as “π state”.

  The spatial light modulator 14 controls the state of the plurality of mirror elements 141 according to the device pattern to be transferred to the wafer 161 under the control of the controller 17. Specifically, the pattern design apparatus 2 (see FIG. 4A and the like) described in detail later, according to the device pattern to be transferred to the wafer 161, the distribution of states of the plurality of mirror elements 141 (in other words, the arrangement) ). For example, the pattern design apparatus 2 determines the state distribution of the plurality of mirror elements 141 by determining whether each of the plurality of mirror elements 141 should be in the 0 state or the π state. Thereby, the phase distribution of the exposure light EL3 reflected by the plurality of mirror elements 141 on the plane orthogonal to (or intersects with) the traveling direction of the exposure light EL3 is determined. The controller 17 acquires modulation pattern information that defines the distribution of states of the plurality of mirror elements 141 from the pattern design device 2. The controller 17 controls the state of the plurality of mirror elements 141 based on the modulation pattern information.

  An example of such a spatial light modulator 14 is described in, for example, US Patent Application Publication No. 2013/0222781 incorporated herein by reference.

  In FIG. 1 again, the projection optical system 15 projects a light / dark pattern onto the wafer 161 with the exposure light EL <b> 3 spatially modulated by the spatial light modulator 14. The projection optical system 15 projects a light / dark pattern corresponding to the spatial modulation by the spatial light modulator onto the surface of the wafer 161 (specifically, the surface of the resist film coated on the wafer 161) with the exposure light EL3.

  The projection optical system 15 projects the exposure light EL <b> 3 onto a planar exposure area ELA set on the surface of the wafer 161. That is, the projection optical system 15 projects the exposure light EL3 onto the exposure area ELA so that the planar exposure area ELA set on the surface of the wafer 161 is exposed by the exposure light EL3. The optical axis AX of the projection optical system 15 is orthogonal to the planar exposure area ELA. The planar exposure area ELA is formed at a position deviating from the optical axis AX of the projection optical system 15. A predetermined area deviated from a portion where the surface of the wafer 161 and the optical axis AX of the projection optical system 15 coincide with each other is a planar exposure area ELA.

  The projection optical system 15 projects the exposure light EL3 having a phase distribution based on the device pattern onto the surface of the wafer 161 as an aerial image having an intensity distribution corresponding to the phase distribution.

  The projection optical system 15 is a reduction system. In the present embodiment, the projection magnification of the projection optical system 15 is 1/200 as an example. The resolution of the projection optical system 15 in this embodiment is set to be larger than the value obtained by multiplying the size of each mirror element 141 of the spatial light modulator 14 (the dimension of one side of each mirror element) by the projection magnification. Yes. Therefore, the exposure light EL3 reflected by the single mirror element 141 is not resolved on the exposure area ELA. Note that the projection magnification of the projection optical system is not limited to a reduction magnification of 1/200, and may be, for example, a reduction magnification of 1/400, an equal magnification, or an enlargement magnification.

  The wafer stage 16 can hold the wafer 161 and can release the held wafer 161. The wafer stage 16 is movable along a plane (for example, XY plane) including the exposure area ELA while holding the wafer 161 under the control of the controller 17. The wafer stage 16 is movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. For example, the wafer stage 16 may be moved by the operation of a stage driving system 162 including a planar motor. An example of a stage drive system 162 including a planar motor is disclosed in, for example, US Pat. No. 6,452,292, which is incorporated herein by reference. However, the stage drive system 162 may include another motor (for example, a linear motor) in addition to or instead of the planar motor.

  The position of the wafer stage 16 in the XY plane (however, it may include a rotation angle along at least one of the θX direction, the θY direction, and the θZ direction) is set to 0. 0 by the laser interferometer 163, for example. It is always measured with a resolution of about 25 nm. The measurement result of the laser interferometer 163 is output to the controller 17. However, the exposure apparatus 1 may include another measurement apparatus (for example, an encoder) that can measure the position of the wafer stage 16 in the XY plane in addition to or instead of the laser interferometer 163.

  The controller 17 controls the operation of the recording system 1. The controller 17 may include a CPU (Central Processing Unit) and a memory, for example. For example, the controller 17 controls the emission operation of the exposure light EL1 by the light source 11. Specifically, the controller 17 controls the light source 11 so as to emit pulsed light having a predetermined pulse width and pulsed at a predetermined frequency as the exposure light EL1 at an appropriate timing. Further, the controller 17 controls the spatial modulation operation of the exposure light EL <b> 2 by the spatial light modulator 14. Specifically, the controller 17 controls the states of the plurality of mirror elements 141 based on the modulation pattern information acquired from the pattern design device 2. Further, the controller 17 controls the movement of the wafer stage 16. Specifically, the controller 17 controls the stage drive system 161 so that the exposure area ELA moves relatively on the surface of the wafer 161 through a desired movement path.

  The illumination optical system 12 may adjust the exposure light EL1 so that the exposure light EL2 is irradiated onto a part of the light modulation surface 14a. The illumination optical system 12 may adjust the exposure light EL1 so that the irradiation area irradiated with the exposure light EL2 on the light modulation surface 14a is smaller than the light modulation surface 14a. The illumination optical system 12 may adjust the exposure light EL1 so that the shape of the irradiation region irradiated with the exposure light EL1 on the light modulation surface 14a does not match the shape of the light modulation surface 14a. Further, the illumination optical system 12 may change the intensity distribution in the beam cross section of the exposure light EL2 to make the illuminance distribution of the exposure light EL2 reaching the light modulation surface 14a substantially uniform. In this case, the illumination optical system 12 may include a beam intensity distribution changing unit disposed in the optical path on the emission side of the optical integrator provided in the illumination optical system 12.

  In addition to or instead of controlling the phase distribution of the exposure light EL3, the spatial light modulator 14 follows the intensity distribution of the exposure light EL3 (that is, the direction orthogonal to (or intersects with) the traveling direction of the exposure light EL3). The intensity distribution on the surface may be controlled. The spatial light modulator 14 may include an arbitrary device (for example, a liquid crystal panel or the like) capable of spatially modulating the exposure light EL2 instead of the plurality of mirror elements 141.

  The spatial light modulator 14 in the above-described example is a phase type (piston type) spatial light modulation including a plurality of mirror elements 141 whose positions along the vertical direction (that is, the traveling direction of the exposure light EL2) are variable. It is a vessel. However, the spatial light modulator 14 may be a tilted spatial light modulator including a plurality of mirror elements that can be tilted (for example, tiltable with respect to the X axis or the Y axis). Further, the spatial light modulator 14 may be a phase-step inclined mirror type spatial light modulator in which steps are provided on the reflection surfaces of a plurality of mirror elements provided in the inclined type spatial light modulator. The spatial light modulator of the phase difference tilt mirror type is a level between the light reflected by the reflecting surface 141a parallel to the light modulating surface 14a and the light reflected by the reflecting surface 141a inclined with respect to the light modulating surface 14a. This is a spatial light modulator that sets the phase difference to λ / 2 (180 degrees (π radians)). Further, disclosed in International Publication No. 2014/104001, which is incorporated herein by reference, a plurality of mirror elements whose positions in the vertical direction are variable, and positions between the plurality of mirror elements A spatial light modulator that spatially modulates the light intensity by moving the mirror in the vertical direction may be used.

(1-2) Operation of Exposure Apparatus 1 Next, the operation (particularly, the exposure operation) of the exposure apparatus 1 of the present embodiment will be described with reference to FIGS. 3 (a) to 3 (c). FIG. 3A is a plan view showing an example of the movement path of the exposure area ELA on the surface of the wafer 161. FIG. 3B and FIG. 3C are plan views showing examples of state distributions of the plurality of mirror elements 141, respectively.

  First, the exposure apparatus 1 loads the wafer 161. In other words, the wafer 161 (that is, the wafer 161 coated with a resist) is mounted on the wafer stage 16. Thereafter, the exposure apparatus 1 exposes the wafer 161.

  As shown in FIG. 3A, the exposure light EL3 is applied to a planar exposure area ELA set on the surface of the wafer 161. The exposure light EL3 exposes the exposure area ELA. The exposure area ELA is exposed by one or a plurality of pulse emission of the pulsed light that is the exposure light EL3. As a result, the exposure light EL3 is applied to the exposure target surface 110, which is at least a part of the surface of the wafer 161 that overlaps the exposure area ELA.

  The wafer stage 16 moves so that the exposure area ELA moves relatively on the surface of the wafer 161 through a desired movement path. The arrows shown in FIG. 3A indicate an example of the movement path of the exposure area ELA. In the example shown in FIG. 3A, the wafer stage 16 moves in the −Y direction so that the exposure area ELA moves in the + Y direction at a certain timing. Thereafter, the wafer stage 16 moves in the + X direction so that the exposure area ELA moves in the −X direction. Thereafter, the wafer stage 16 moves in the + Y direction so that the exposure area ELA moves in the -Y direction. Thereafter, the wafer stage 16 moves in the + X direction so that the exposure area ELA moves in the −X direction. Thereafter, the wafer stage 16 repeats the movement toward the −Y direction, the movement toward the + X direction, the movement toward the + Y direction, and the movement toward the + X direction. As a result, the exposure area ELA moves relatively on the surface of the wafer 161 through a path indicated by an arrow in FIG.

  The surface of the wafer 161 can be divided into a plurality of exposure target surfaces 110. In this case, the wafer stage 16 moves so that the exposure area ELA sequentially overlaps the plurality of exposure target surfaces 110. The wafer stage 16 moves so that the exposure area ELA sequentially traces the plurality of exposure target surfaces 110. In the example shown in FIG. 3A, the wafer stage 16 moves in the −Y direction so that the exposure area ELA overlaps the exposure target surface 110-1. The light source 11 emits the exposure light EL1 so that the exposure light EL3 exposes the exposure area ELA (that is, the exposure target surface 110-1) at the timing when the exposure area ELA overlaps the exposure target surface 110-1. That is, the light source 11 emits the exposure light EL3 so that the timing at which the exposure area ELA overlaps the exposure target surface 110-1 and the timing of one pulse emission of the pulsed light emitted from the light source 11 coincide. . Thereafter, the wafer stage 16 moves in the −Y direction so that the exposure area ELA overlaps the exposure target surface 110-2a adjacent to the exposure target surface 110-1 along the Y-axis direction. While the exposure area ELA is moving from the exposure target surface 110-1 toward the exposure target surface 110-2, the light source 11 does not emit the exposure light EL1. That is, pulse light emission is not performed while the exposure area ELA moves from the exposure target surface 110-1 toward the exposure target surface 110-2. The light source 11 emits the exposure light EL1 so that the exposure light EL3 exposes the exposure area ELA (that is, the exposure target surface 110-2) at the timing when the exposure area ELA overlaps the exposure target surface 110-2. Thereafter, the same operation is repeated for a series of exposure target surfaces 110 arranged along the Y axis. Thereafter, when the exposure on the series of exposure target surfaces 110 arranged along the Y axis is completed (that is, the exposure on the exposure target surface 110-3 is completed), the wafer stage 16 is placed on the exposure target surface 110-3 with the X axis. The exposure area ELA moves in the −X direction so that the exposure area ELA overlaps the exposure target surface 110-4 adjacent in the direction. Thereafter, the same operation is repeated for a series of exposure target surfaces 110 arranged along the Y axis starting from the exposure target surface 110-4. Thereafter, the above-described operation is repeated so that the exposure target surface ELA moves through the movement path shown in FIG.

  In the example shown in FIG. 3A, for the sake of simplicity of explanation, it is assumed that one exposure target surface 110 does not overlap with another adjacent exposure target surface 110. That is, it is assumed that a part of one exposure target surface 110 does not overlap with a part of another adjacent exposure target surface 110. However, at least a part of one exposure target surface 110 may overlap with at least a part of another adjacent exposure target surface 110. For example, a part of one exposure target surface 110 is exposed by one pulse light emission, and a part of the other exposure target surface 110 that overlaps a part of this one exposure target surface 110 is emitted by one pulse light emission. You may expose.

  In the example shown in FIG. 3A, while the exposure area ELA is relatively moving on the surface of the wafer 161 through a desired movement path, the wafer 161 is emitted by one or a plurality of pulse emission. Has been exposed. However, the exposure area ELA may be stationary on the wafer 161 at the timing when the wafer 161 is exposed. In this case, the exposure apparatus 1 performs an operation of moving the exposure area ELA on the surface of the wafer 161 after exposing the exposure target surface 110. Further, when the wafer 161 is exposed with the exposure area ELA being stationary with respect to the wafer 161 in this way, the exposure apparatus 1 uses a plurality of pulse emission instead of the exposure by one pulse emission. Exposure may be performed.

  The plurality of mirror elements 141 included in the spatial light modulator 14 is in a state based on a device pattern to be transferred to the wafer 161 by one pulse emission for each exposure (that is, one pulse emission). Transition to. That is, the plurality of mirror elements 141 transition to the state of the plurality of mirror elements 141 when performing exposure by one-time pulse emission defined by the modulation pattern information.

  In the example shown in FIG. 3A, when the exposure target surface 110-1 is exposed, the plurality of mirror elements 141 should be transferred to the wafer 161 by one exposure of the exposure target surface 110-1. A transition is made to a state based on a device pattern (that is, a device pattern to be transferred to the wafer 161 located below the exposure target surface 110-1). Thereafter, when the exposure target surface 110-2 is exposed following the exposure target surface 110-1, the plurality of mirror elements 141 are transferred to the wafer 161 by one exposure of the exposure target surface 110-2. The state transitions to a state based on the device pattern to be transferred (that is, the device pattern to be transferred to the wafer 161 positioned below the exposure target surface 110-2). For example, FIG.3 (b) shows an example of the state of the several mirror element 141 for exposing the exposure object surface 110-1. For example, FIG.3 (c) shows an example of the state of the several mirror element 141 for exposing the exposure object surface 110-2.

  In addition, the mirror element 141 shown in white in FIGS. 3B and 3C indicates the mirror element 141 in the 0 state. On the other hand, the mirror element 141 shown in black in FIGS. 3B and 3C indicates the mirror element 141 in the π state.

  As described above, after the wafer 161 is exposed, the wafer 161 is developed by a developer (not shown). Thereafter, the wafer 161 is etched by an etching apparatus (not shown). As a result, the device pattern is transferred (in other words, formed) onto the wafer 161.

(2) Pattern design device 2
Next, the pattern design apparatus 2 that generates modulation pattern information that defines the distribution of states of the plurality of mirror elements 141 will be described with reference to FIGS. 4 to 14.

(2-1) Structure of Pattern Design Device 2 First, the structure of the pattern design device 2 will be described with reference to FIGS. 4 (a) to 4 (c). FIG. 4 is a block diagram showing the structure of the pattern design apparatus 2.

  As shown in FIG. 4A, the pattern design apparatus 2 includes a CPU (Central Processing Unit) 21, a memory 22, an input unit 23, an operation device 24, and a display device 25.

  Here, as shown in FIG. 4B, the pattern design apparatus 2 is connected to a plurality of exposure apparatuses 1 via a wired or wireless communication interface 4 to control the plurality of exposure apparatuses 1. May be provided. The host computer 3 may be provided in a device manufacturing factory where the exposure apparatus 1 is installed, or may be provided outside the device manufacturing factory.

  As shown in FIG. 4C, the pattern design apparatus 2 may be provided in a server connected to the plurality of exposure apparatuses 1 via a wired or wireless communication interface 5. The pattern design apparatus 2 may be connected to the host computer 3 via a wired or wireless communication interface 6. In the case of FIG.4 (c), the pattern design apparatus 2 may be provided in the device manufacturing factory in which the exposure apparatus 1 is installed, and may be provided outside the device manufacturing factory.

  The CPU 21 controls the operation of the pattern design device 2. The CPU 21 generates modulation pattern information as will be described in detail later. Specifically, the CPU 21 adjusts the design variable that defines the cost function so that the end condition of a predetermined cost function (in other words, the objective function) is satisfied. That is, the CPU 21 solves an optimization problem or a mathematical programming problem for optimizing the design variable. As a result, the CPU 21 can generate modulation pattern information based on the optimized design variable. Here, “optimization of design variable” means an operation of calculating a design variable that defines an exposure operation capable of transferring a device pattern to the wafer 161 with better characteristics.

  At least some of the design variables directly or indirectly define the state of the plurality of mirror elements 141, as will be described in detail later. For this reason, the CPU 21 performs a pattern design operation for generating modulation pattern information defining the distribution of the states of the plurality of mirror elements 141 by adjusting the design variable that defines the cost function. That is, the CPU 21 can generate modulation pattern information by optimizing design variables.

  The CPU 21 substantially functions as an EDA (Electronic Design Automation) tool. For example, the CPU 21 may function as an EDA tool by executing a computer program for causing the CPU 21 to perform the design variable adjustment operation (particularly, the pattern design operation) described above.

  The memory 22 stores a computer program for causing the CPU 21 to perform the design variable adjustment operation described above. The memory 22 further temporarily stores intermediate data generated while the CPU 21 performs the above-described design variable adjustment operation.

  The input unit 23 receives input of various data used for the CPU 21 to perform design variable adjustment operations. Examples of such data include data indicating a device pattern to be transferred to the wafer 161, data indicating initial values of design variables, data indicating constraints on design variables, and the like. However, the pattern design apparatus 2 may not include the input unit 23.

  The operation device 24 receives user operations on the pattern design apparatus 2. The operating device 24 may include, for example, at least one of a keyboard, a mouse, and a touch panel. The CPU 21 may perform the above-described design variable adjustment operation based on a user operation received by the operation device 24. However, the pattern design device 2 may not include the operation device 24.

  The display device 25 can display desired information. For example, the display device 25 may display information indicating the state of the pattern design device 2 directly or indirectly. For example, the display device 25 may display the modulation pattern information generated by the pattern design device 2 directly or indirectly. For example, the display device 25 may directly or indirectly display any information related to the design variable adjustment operation (particularly, the pattern design operation) described above. However, the pattern design apparatus 2 may not include the display device 25.

  Note that the pattern design apparatus 2 may be an apparatus that constitutes a part of the controller 17 included in the exposure apparatus 1. That is, the pattern design apparatus 2 may be an apparatus that constitutes a part of the exposure apparatus 1. In this case, the controller 17 generates modulation pattern information and controls the spatial light modulator 14 based on the generated modulation pattern information. Alternatively, the pattern design apparatus 2 may be an apparatus that is physically or functionally separated from the controller 17 (or the exposure apparatus 1 itself) included in the exposure apparatus 1. In this case, the pattern design device 2 generates modulation pattern information and outputs the generated modulation pattern information to the controller 17. The controller 17 controls the spatial light modulator 14 based on the modulation pattern information output from the pattern design device 2.

  Further, the pattern design apparatus 2 may be a server that controls the plurality of exposure apparatuses 1 in an integrated manner. This server may be a host computer (for example, the host computer of FIG. 4B or 4C) possessed by the device manufacturer, and a server (for example, FIG. 4) provided separately from the host computer. (C) server).

(2-2) Pattern Design Operation by Pattern Design Device Next, a pattern design operation (that is, an operation for generating modulation pattern information) performed by the pattern design device 2 will be described with reference to FIG. FIG. 5 is a flowchart showing the flow of the pattern design operation performed by the pattern design apparatus 2.

  As shown in FIG. 5, the CPU 21 provided in the pattern design apparatus 2 sets design variables related to the light source 11 (step S21). The design variable associated with the light source 11 is an adjustable or fixed parameter that defines the characteristics (eg, optical characteristics) of the light source 11. Examples of such design variables related to the light source 11 include at least one of the shape of the illumination pattern by the light source 11 (that is, the shape of the emission pattern of the exposure light EL1) and the light intensity of the exposure light EL1.

  The CPU 21 further sets design variables related to the projection optical system 15 (step S22). The design variables associated with the projection optical system 15 are adjustable or fixed parameters that define the characteristics (eg, optical characteristics) of the projection optical system 15. As design variables related to the projection optical system 15, the wavefront shape of the exposure light EL3 projected by the projection optical system 15, the intensity distribution of the exposure light EL3 projected by the projection optical system 15, and the exposure projected by the projection optical system 15. At least one of the phase shift amounts of the light EL3 is an example. Alternatively, when the projection optical system 15 includes a wavefront manipulator capable of adjusting at least one of the wavefront shape of the exposure light EL3, the intensity distribution of the exposure light EL3, the phase shift amount of the exposure light EL3, and the like. As a design variable related to the projection optical system 15, the control amount (or state) of the wavefront manipulator is given as an example.

  The CPU 21 further sets design variables related to the design layout (step S23). The design variables associated with the design layout are characteristics of the design layout (ie, the physical or virtual mask pattern used to transfer the desired device pattern onto the wafer 161 or the desired device pattern itself) (eg, optical Adjustable or fixed parameter that defines the characteristic). The design layout is generated by so-called EDA based on a device pattern to be transferred to the substrate and a predetermined design rule. Examples of the predetermined design rule include a minimum width of a line or a hole and a minimum space between two lines or two holes.

  An example of the design variable related to the light source 11, the design variable related to the projection optical system 15, and the design variable related to the design layout is described in Patent Document 1 (International Publication No. WO 2006/2006/2006) incorporated herein by reference. 088385 pamphlet) and the like. For this reason, in order to simplify the description, detailed description regarding these design variables is omitted.

  The CPU 21 further sets design variables related to the spatial light modulator 14 (step S24). Design variables associated with the spatial light modulator 14 are adjustable or fixed parameters that define the characteristics (eg, optical characteristics) of the spatial light modulator 14. As a design variable related to such a spatial light modulator 14, each mirror group 140 in the case where a plurality of mirror elements 141 included in the spatial light modulator 14 is divided in units of the mirror group 140 including at least one mirror element 141. Examples of the optical characteristics are as follows.

  In the present embodiment, as described above, the spatial light modulator 14 is a reflective spatial light modulator. In the present embodiment, as the optical characteristics of the mirror group 140, the reflection amplitude of the mirror group 140 (that is, a parameter that directly or indirectly indicates the amplitude of light reflected by the mirror group 140) is used. In the present embodiment, the reflection amplitude of the mirror group 140 is a parameter whose absolute value is defined by, for example, the square root of the reflectance of the mirror group 140 with respect to the exposure light EL2. Furthermore, in the present embodiment, the reflection amplitude of the mirror group 140 is a parameter that takes either a positive or negative value according to the phase of the exposure light EL3 obtained by the mirror group 140 reflecting the exposure light EL2. For example, the reflection amplitude of the mirror group 140 has a positive value when the phase of the exposure light EL3 is δ, but is negative when the phase of the exposure light EL3 is δ + α (for example, α = 180 degrees). The parameter may be a value. Here, in addition to or instead of the reflection amplitude of the mirror group 140, the amplitude of the light reflected by the mirror group 140, the reflectance of the mirror group 140, and the intensity of the light reflected by the mirror group 140 (in other words, the mirror group 140) At least one of the intensities that can be calculated from the amplitude of the light reflected by 140 is an optical characteristic of the mirror group 140 (that is, an amplitude characteristic value that indicates the amplitude of the light through the mirror element 141 in the mirror group 140). ).

  When the spatial light modulator 14 is a transmissive spatial light modulator having a plurality of optical elements (in other words, optical surfaces), a plurality of optical variables are used as design variables related to the spatial light modulator 14. The optical characteristics of each expensive element group in the case where the element is divided into units of an optical element group including at least one optical element may be used. In this case, as the optical characteristics of the optical element group, the transmission amplitude of the optical element group (that is, a parameter directly or indirectly indicating the amplitude of light transmitted through the optical element group, and the square root of the transmittance of the optical element group) The parameter whose absolute value is defined by the above may be used. At this time, out of the amplitude of the light transmitted through the optical element group, the transmittance of the optical element group, and the intensity of the light transmitted through the optical element group (in other words, the intensity that can be calculated from the amplitude of the light transmitted through the optical element group) May be used as an optical characteristic of the optical element group (that is, an amplitude characteristic value indicating the amplitude of light via the optical element in the optical element group).

  The optical characteristics of the mirror group 140 depend on the state of each mirror element 141 constituting the mirror group 140. For this reason, the design variable related to the spatial light modulator 14 is substantially the state of each mirror element 141 (or the distribution of the mirror elements 141 in the 0 state and the distribution of the mirror elements 141 in the π state). It can be said that it is a design variable indicating

  In addition to the operations from step S21 to step S24, the CPU 21 may set a constraint condition for each design variable. Furthermore, the CPU 21 may acquire various data used for the CPU 21 to perform design variable adjustment operations (particularly, pattern design operations) via the input unit 23. The set constraint conditions and various data acquired via the input unit 23 may be taken into account when adjusting design variables described later.

  Thereafter, the CPU 21 defines a cost function CF defined by the design variable set in step S21 to step S24 (step S25). An example of the cost function CF is represented by Equation 1, for example.

Here, “(z1 ₁ ,..., Z1 _N1 )” indicates a design variable related to the light source 11 set in step S21. “N1” indicates the total number of design variables related to the light source 11. “(Z2 ₁ ,..., Z2 _N2 )” indicates design variables related to the projection optical system 15 set in step S22. “N2” indicates the total number of design variables related to the projection optical system 15. “(Z3 ₁ ,..., Z3 _N3 )” indicates design variables related to the design layout set in step S23. “N3” indicates the total number of design variables related to the design layout. “(Z4 ₁ ,..., Z4 _N4 )” indicates design variables related to the spatial light modulator 14 set in step S24. “N4” indicates the total number of design variables related to the spatial light modulator 14. “F _p (z1 ₁ ,..., Z1 _N1 , z2 ₁ ,..., Z2 _N2 , z3 ₁ ,..., Z3 _N3 , z4 ₁ ,..., Z4 _N4 )” At the evaluation point (for example, the aerial image on the wafer 161 (that is, the intensity distribution of the exposure light EL3) or the evaluation point corresponding to a desired image portion of the resist image defined by the aerial image), the design variable “z1 _{1 , ···, z1 N1, z2 1} , ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, and the estimated value of the characteristic realized by _{z4 N4} ", the p This is a function for deriving a difference from the target value of the characteristic to be realized at the second evaluation point. “W _p ” is a weighting coefficient assigned to the p-th evaluation point. “P” is the total number of evaluation points.

Here, the design variables related to the light source 11, the design variables related to the projection optical system 15, the design variables related to the design layout, and the design variables related to the spatial light modulator 14 are substantially on the wafer 161. Is defined (that is, the intensity distribution of the exposure light EL3). Therefore, the cost function CF may be a function related to the characteristics of the aerial image of the exposure light EL3 on the wafer 161. For example, _{"f p (z1 1, ···,} z1 N1, z2 1, ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, z4 N4) " is, p It may be a function that derives a difference between the estimated value of the aerial image characteristic realized at the th evaluation point and the target value of the aerial image characteristic to be realized at the p th evaluation point.

Alternatively, the aerial image defines a resist image corresponding to the exposure pattern of the resist applied to the wafer 161. The resist image defines a device pattern transferred to the wafer 161. For this reason, the cost function CF may be a function related to the characteristics of the resist image on the wafer 161. For example, _{"f p (z1 1, ···,} z1 N1, z2 1, ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, z4 N4) " is, p It may be a function that derives a difference between the estimated value of the characteristic of the resist image realized at the th evaluation point and the target value of the characteristic of the resist image to be realized at the p th evaluation point.

  Note that the cost function CF shown in Equation 1 is merely an example. Therefore, a cost function CF different from Equation 1 may be defined. Another example of the cost function CF is described in, for example, the above-mentioned Patent Document 1 (International Publication No. 2006/083585 pamphlet) incorporated in the present specification by use, and detailed description thereof will be omitted.

  Thereafter, the CPU 21 adjusts (in other words, changes) at least one of the design variables set in step S21 to step S24 so that the termination condition of the cost function CF is satisfied (step S26). For example, the CPU 21 adjusts at least one design variable so that the termination condition “the cost function CF is minimized” is satisfied. At this time, the CPU 21 may adjust a plurality of design variables at the same time. Specifically, for example, the CPU 21 includes at least one of a design variable related to the light source 11, a design variable related to the projection optical system 15, a design variable related to the design layout, and a design variable related to the spatial light modulator 14. You may adjust two simultaneously. Alternatively, the CPU 21 may adjust a plurality of design variables one by one in order. For example, the CPU 21 may adjust the design variable related to the light source 11 while fixing the design variable related to the projection optical system 15, the design layout, and the spatial light modulator 14. Thereafter, for example, the CPU 21 may adjust the design variables related to the spatial light modulator 14 while fixing the design variables related to the light source 11, the projection optical system 15, and the design layout.

  As described above, when the termination condition “the cost function CF is minimized” is satisfied, the characteristics of the resist image defining the device pattern transferred to the wafer 161 are closest to the target value. The ideal condition of the resist image is satisfied. When the ideal condition of the resist image is satisfied, the pattern error of the device pattern transferred to the wafer 161 (that is, the amount of deviation between the actually transferred device pattern and the ideal device pattern) is minimized. For this reason, the pattern design operation shown in FIG. 5 is an operation for adjusting a plurality of design variables (that is, arrangement of design variables) so that the pattern error of the device pattern is reduced (typically minimized). It can be said that there is. In other words, it can be said that the pattern design operation shown in FIG. 5 is an operation of adjusting a plurality of design variables so that the pattern error of the device pattern is smaller than before adjusting the design variables.

(2-3) Specific Examples of Design Variables Related to Spatial Light Modulator Next , specific examples of design variables related to the spatial light modulator 14 will be described with reference to FIGS. Hereinafter, the first specific example of the design variable to the eighth specific example of the design variable will be described in order. However, at least a part of the configuration requirements described in the specific example of the design variable A (where A is an integer of 1 to 8) is the design variable B (where B is 1 to 8). Thus, it is possible to combine with a specific example.

(2-3-1) First Specific Example of Design Variables Related to Spatial Light Modulator First , referring to FIGS. 6A and 6B, the design variables related to the spatial light modulator 14 A first specific example will be described. FIGS. 6A and 6B are plan views showing a mirror group 140-1 that defines a first specific example of design variables related to the spatial light modulator 14, respectively.

  As shown in FIGS. 6A and 6B, the first specific example of the design variable related to the spatial light modulator 14 is that a plurality of mirror elements 141 included in the spatial light modulator 14 are provided as a single mirror. The reflection amplitude of each mirror group 140-1 in the case where the mirror group 140-1 including the element 141 is divided in units is shown.

  The mirror group 140-1 includes a single mirror element 141. Specifically, the mirror group 140-1 includes a reflecting surface 141a of a single mirror element 141. In other words, the mirror group 140-1 includes a portion where the reflecting surface 141a of the single mirror element 141 is located.

  In addition to the single mirror element 141, the mirror group 140-1 is located between the single mirror element 141 and another mirror element 141 adjacent to the single mirror element 141 and is a single mirror. A portion that does not constitute the element 141 (particularly, that does not constitute the reflecting surface 141a) is included. In other words, the mirror group 140-1 includes a portion that is adjacent to the single mirror element 141 and does not constitute the reflecting surface 141a of the single mirror element 141. In the present embodiment, as an example of a portion that is located between the single mirror element 141 and the other mirror element 141 and does not constitute the single mirror element 141, the distribution is performed along the outer edge of the single mirror element 141. A gap 142 (or a part of such a gap 142) is illustrated. Therefore, in the present embodiment, the mirror group 140-1 includes a gap 142 distributed along the outer edge of the single mirror element 141 in addition to the single mirror element 141. More specifically, the mirror group 140-1 is adjacent to the gap 142 (+ X) adjacent to the outer edge of the single mirror element 141 on the + X direction side and the outer edge of the single mirror element 141 on the + Y direction side. The gap 142 (+ Y), the gap 142 (−X) adjacent to the outer edge of the single mirror element 141 on the −X direction side, and the gap 142 (− adjacent to the outer edge of the single mirror element 141 on the −Y direction side) -Y). However, the mirror group 140-1 may not include at least one of the gap 142 (+ X), the gap 142 (+ Y), the gap 142 (−X), and the gap 142 (−Y).

  The reflection amplitude of the mirror group 140-1 is a parameter whose absolute value is defined by the square root of the reflectance of the mirror group 140-1 with respect to the exposure light EL2. Therefore, the reflection amplitude of the mirror group 140-1 is different from that of the reflection surface 141a as well as the reflectance of the exposure light EL2 through the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1. This is a parameter that also takes into account the reflectance of the exposure light EL2 through the portion of the group 140-1 (that is, the portion of the mirror group 140-1 that does not constitute the reflecting surface 141a). The reflection amplitude of the mirror group 140-1 is not only the reflection of the exposure light EL2 via the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1, but also the mirror group 140- different from the reflection surface 141a. This is a parameter that also considers the reflection of the exposure light EL2 through the first portion (that is, the portion of the mirror group 140-1 that does not constitute the reflecting surface 141a).

  As described above, in the present embodiment, the gap 142 is illustrated as an example of a portion that does not constitute the reflecting surface 141a. Therefore, in this embodiment, the reflection amplitude of the mirror group 140-1 is a parameter that also takes into account the reflectance of the exposure light EL2 through the gap 142 in the mirror group 140-1. The reflection amplitude of the mirror group 140-1 is a parameter that also considers the reflection of the exposure light EL2 through the structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-1 can reach. As an example of a structure that the exposure light EL2 propagating through the gap 142 can reach, for example, at least one of the first connection member 143, the hinge part 144, the post part 145, the anchor part 146, the electrode 148, and the support substrate 149 One is given. As another example of the structure that the exposure light EL2 propagating through the gap 142 can reach, for example, a surface other than the reflective surface 141a of the mirror element 141 (for example, the reflective surface 141a is the upper surface of the mirror element 141). Then, at least one of the side surface and the bottom surface of the mirror element 141 is raised.

  As described above, in this embodiment, the reflection amplitude of the mirror group 140-1 also considers the reflectance of the exposure light EL2 through a portion different from the reflection surface 141a (that is, a portion that does not constitute the reflection surface 141a). It is a parameter. For this reason, the reflection amplitude of the mirror group 140-1 may be different from the reflection amplitude of the mirror element 141 considering only the reflectance of the exposure light EL2 through the reflection surface 141a. However, the reflection amplitude of the mirror group 140-1 is compared with the reflection amplitude of the mirror element 141 in consideration of only the reflectance of the exposure light EL2 through the reflection surface 141a. This is advantageous in that the optical characteristics related to the reflection of the exposure light EL2 can be expressed with higher accuracy.

  Since the mirror group 140-1 includes a single mirror element 141, the number of mirror groups 140-1 is the same as the number of mirror elements 141 included in the spatial light modulator. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-1) is the same as the number of mirror elements 141. Therefore, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding single mirror element 141. As a result, the N4 design variables associated with the spatial light modulator 14 each indicate the reflection amplitude of the N4 mirror group 140-1 including the corresponding single mirror element 141. That is, the design variable related to the spatial light modulator 14 indicates the reflection amplitude of the N4 mirror groups 140-1 each including a single mirror element 141.

  As shown to Fig.6 (a), the single mirror element 141 which comprises the mirror group 140-1 can be in 0 state. Furthermore, as shown in FIG. 6B, the single mirror element 141 constituting the mirror group 140-1 can be in the π state. Therefore, the possible values of each of the N4 design variables related to the spatial light modulator 14 are the reflection amplitudes r (0) and π states of the mirror group 140-1 including the single mirror element 141 that is in the 0 state. Is one of the reflection amplitudes r (π) of the mirror group 140-1 including the single mirror element 141. For this reason, when setting or adjusting the design variable related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to the reflection amplitude r according to the device pattern to be transferred to the wafer 161 or the like. Set to either (0) or r (π).

  The CPU 21 determines N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When N4 design variables related to the spatial light modulator 14 are determined, the states of the N4 mirror elements 141 constituting the N4 mirror group 140-1 are determined. Specifically, when it is determined that the design variable indicating the reflection amplitude of a certain mirror group 140-1 is the reflection amplitude r (0), the single mirror element 141 constituting the certain mirror group 140-1 is changed. It is determined that the state should be a zero state. Similarly, when it is determined that the design variable indicating the reflection amplitude of a certain mirror group 140-1 is the reflection amplitude r (π), the state of the single mirror element 141 constituting the certain mirror group 140-1 is: It is determined that it should be in the π state. As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  The CPU 21 may specify (in other words, estimate or calculate) the reflection amplitudes r (0) and r (π) using simulation. In this case, the CPU 21 sets each of the N4 design variables related to the spatial light modulator 14 to one of the reflection amplitudes r (0) and r (π) specified by the simulation.

  Alternatively, when the memory 22 stores in advance the reflection amplitudes r (0) and r (π) specified using simulation, the CPU 21 uses the simulation to determine the reflection amplitudes r (0) and r (π). ) Need not be specified. In this case, the CPU 21 may specify the reflection amplitudes r (0) and r (π) by obtaining the reflection amplitudes r (0) and r (π) stored in the memory 22. The CPU 21 may set each of the N4 design variables related to the spatial light modulator 14 to one of the reflection amplitudes r (0) and r (π) acquired from the memory 22.

  Here, an example of an operation for specifying the reflection amplitudes r (0) and r (π) using simulation will be described with reference to FIGS. 7 (a) to 7 (c). FIG. 7A is a side view showing the basic structure of the simulation model of the spatial light modulator 14. FIG. 7B and FIG. 7C are side views showing an example of a simulation model used for specifying the reflection amplitudes r (0) and r (π), respectively.

  As shown in FIG. 7A, the reflection amplitudes r (0) and r (π) are specified using a simulation model for electromagnetic field calculation. In the example shown in FIG. 7A, a simulation model in which the distribution of the plurality of mirror elements 141 is a one-dimensional distribution is used to reduce the load required for the simulation. However, a simulation model in which the distribution of the plurality of mirror elements 141 is a two-dimensional distribution or a three-dimensional distribution may be used. The simulation model has a periodic structure along a predetermined direction (for example, the Y-axis direction). Specifically, the simulation model has a structure in which a unit model divided by a periodic boundary repeatedly appears along a predetermined direction (for example, the Y-axis direction). Further, in the simulation model shown in FIG. 7A, the support substrate 149 includes a first substrate portion 149a and a second substrate portion 149b. The upper surface of the first substrate portion 149a (the surface on the −Z direction side in FIG. 7A) is closer to the plurality of mirror elements 141 than the upper surface of the second substrate portion 149b. The gap 142 located between the two mirror elements 141 adjacent to each other is the central portion of the first substrate portion 149a or the second substrate portion 149b or above the vicinity of the central portion (in FIG. 7A, in the −Z direction). Located on the side).

  Using such a simulation model, the CPU 21 specifies the light intensity of the zero-order reflected light from the mirror group 140-1 when incident light is incident on the mirror group 140-1. The ratio of the light intensity of the zero-order reflected light to the light intensity of the incident light is the reflectance.

  For example, as illustrated in FIG. 7B, the CPU 21 uses a first simulation model in which mirror elements 141 in the 0 state and mirror elements in the π state are alternately and repeatedly arranged along the Y-axis direction. Thus, the reflectance R1 in the first simulation model is specified. Further, for example, as shown in FIG. 7C, the CPU 21 continuously has a plurality of mirror elements 141 in the 0 state along the Y-axis direction (four in the example shown in FIG. 7C). Using the second simulation model, a plurality of mirror elements 141 arranged in the π state and continuously arranged in the Y-axis direction (four in the example shown in FIG. 7C) are used to perform the second simulation. The reflectance R2 in the model is specified. The reflectance R1 in the first simulation model, the reflectance R2 in the second simulation model, and the reflection amplitudes r (0) and r (π) have the relationships shown in Equation 2 and Equation 3. Therefore, the CPU 21 can specify the reflection amplitudes r (0) and r (π) by specifying the reflectance R1 in the first simulation model and the reflectance R2 in the second simulation model.

  As another example, the CPU 21 calculates the reflection amplitude r (0) from the third simulation model in which a plurality of mirror elements 141 in the 0 state are continuously arranged along the Y-axis direction, and the mirror elements in the π state The reflection amplitude r (π) may be calculated from a fourth simulation model in which a plurality of 141 are continuously arranged along the Y-axis direction. Then, the CPU 21 may calculate the reflectances R1 and R2 from Equations 2 and 3 using the calculated reflection amplitudes r (0) and r (π). In addition to or instead of using the simulation model, the CPU 21 reflects, for example, the reflectance R1 based on the measurement result of light from the mirror element 141 actually arranged in the arrangement mode shown in FIG. And R2 may be obtained.

  An example in which specific numerical values are applied to the above-described simulation model will be further described. For example, the thickness (that is, the size in the Z-axis direction) d1 of each mirror element 141 is 200 nanometers. The thickness (that is, the size in the Z-axis direction) d2 of the first support substrate portion 143a is 200 nanometers. The distance d3 along the Z-axis direction between the upper surface of the first support substrate portion 143a and the upper surface of the second support substrate portion 143b is 48.25 nanometers. The distance d4 between each mirror element 141 and the top surface of the first support substrate portion 143a is assumed to be 200 nanometers. The distance d5 along the Y-axis direction between the periodic boundary and the central portion of the gap 142 is assumed to be 5 micrometers. The size d6 along the Y-axis direction of the gap 142 is assumed to be 0.5 micrometers. The wavelength of the incident light is assumed to be 193 nanometers. It is assumed that the incident angle of incident light is 6 degrees. In this case, the reflectance R1 in the first simulation model is 0.0055 (= 0.55%), and the reflectance R2 in the second simulation model is 0.100 (= 10%). As a result, the reflection amplitude r (0) is 0.71, and the reflection amplitude r (π) is 0.63.

  However, the phase of the wavefront of the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the 0 state is the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the π state. Compared to the phase of the wavefront, the difference is 180 degrees (π radians). Therefore, one of the reflection amplitudes r (0) and r (π) has a positive value, and the other of the reflection amplitudes r (0) and r (π) has a negative value. For example, when the specific numerical values described above are applied to the simulation model, the reflection amplitude r (0) becomes +0.71 and the reflection amplitude r (π) becomes −0.63, or the reflection amplitude r (0). Becomes −0.71 and the reflection amplitude r (π) becomes +0.63.

  As can be seen from the reflection amplitudes r (0) and r (π) when the specific numerical values described above are applied to the simulation model, in this embodiment, the absolute value of the reflection amplitude r (0) and the reflection amplitude r (π ) Does not have to match the absolute value. As described above, since the mismatch between the reflection amplitude r (0) and the reflection amplitude r (π) is permitted, in the present embodiment, a modulation capable of more suitably transferring a desired device pattern onto the wafer 161. Pattern information is generated. The reason will be described in detail later.

  The operation of specifying the reflection amplitudes r (0) and r (π) using the simulation model shown in FIGS. 7A to 7C is merely an example. Therefore, the reflection amplitudes r (0) and r (π) may be specified using a simulation model different from the simulation model shown in FIGS. 7A to 7C or any other method. For example, the CPU 21 may specify the reflection amplitudes r (0) and r (π) directly or indirectly using an arbitrary simulation model. For example, the CPU 21 specifies the reflectance R (0) of the mirror group 140-1 including the single mirror element 141 in the 0 state by using an arbitrary simulation model, and the specified reflectance (R ( The reflection amplitude r (0) may be specified by calculating the square root of 0. For example, the CPU 21 uses a given simulation model and the mirror group 140 including the single mirror element 141 in the π state. The reflectance R (π) of −1 may be specified, and the reflection amplitude r (π) may be specified by calculating the square root of the specified reflectance R (π). For example, the CPU 21 actually irradiates the mirror element 141 with incident light (for example, exposure light EL2) without using the reflection amplitude r (0) and r (π). The reflection amplitudes r (0) and r (π) may be specified using the measurement result of the light intensity of the reflected light (for example, exposure light EL3) obtained by the CPU 21. Alternatively, the CPU 21 may perform a predetermined test. Using the measurement result of the characteristics of the resist pattern (or device pattern) obtained by developing the wafer 161 actually exposed with the exposure light EL3 that has passed through the test mask on which the pattern is drawn or the spatial light modulator 14 The reflection amplitudes r (0) and r (π) may be specified, and in this case, the CPU 21 estimates a resist image realized by a combination of certain reflection amplitudes r (0) and r (π) by simulation. At the same time, the reflection amplitudes r (0) and r (π) are adjusted so that the estimated resist image matches the actually measured characteristics of the resist pattern. Amplitude r (0) and r ([pi) may identify the.

  As described above, in the first specific example, the design variable related to the spatial light modulator 14 is the reflection of the exposure light EL2 through the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1. In addition, the reflection amplitude in consideration of the reflection of the exposure light EL2 through the portion of the mirror group 140-1 different from the reflection surface 141a is shown. Therefore, the CPU 21 can generate modulation pattern information that can transfer a desired device pattern onto the wafer 161 more suitably.

  Further, in the first specific example, the light that enters the gap 142 of the mirror group 140-1 and is emitted from the gap 142 and the light that has passed through the reflection surface 141a of the mirror group 140-1 are combined. Using the amplitude, the state of the mirror element 141 in each mirror group 140-1 is set to either the 0 state or the π state. Therefore, the CPU 21 can generate modulation pattern information that can transfer a desired device pattern onto the wafer 161 more suitably.

  Hereinafter, the technical reason will be described with reference to FIGS. 8A and 8B. 8A and 8B show two mirror elements 141 adjacent to each other along the Y-axis direction and the gap 142 positioned between the two mirror elements 141 (or the two mirror elements, respectively). 141 is a graph showing the reflectance of the mirror group 140-2 including the gap 142) distributed along the outer edge of 141. FIG.

  First, a comparative example in which a design variable related to the spatial light modulator 14 indicates a reflection amplitude considering only the reflection of the exposure light EL2 through the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1. Will be described. In the comparative example, since the reflection of the exposure light EL2 through the part of the mirror group 140-1 different from the reflecting surface 141a is not considered, the reflection amplitudes r (0) and r (π) are ideally or theoretically. Specifically, there should be a relationship of reflection amplitude r (0) = − reflection amplitude r (π). For example, ideally or theoretically, the reflection amplitude r (0) becomes +1 and the reflection amplitude r (π) becomes −1, or the reflection amplitude r (0) becomes −1 and the reflection amplitude. r (π) should be +1. Therefore, in the comparative example, the CPU 21 sets each of the N4 design variables to either +1 or −1 according to the device pattern or the like to be transferred to the wafer 161.

  However, as described above, in the actual spatial light modulator 14, the exposure light EL2 can be reflected through a portion different from the reflecting surface 141a in the mirror group 140-1. For example, in the actual spatial light modulator 14, the exposure light EL2 may be reflected through a structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-1 can reach. For this reason, the actual or realistic reflection amplitudes r (0) and r (π) do not always have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). Absent.

  For example, by using the reflectance of the mirror group 140 specified when the above-described specific numerical values are applied to the simulation model shown in FIG. An example in which r (π) does not have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π) will be described.

  FIG. 8A shows two mirror elements 141 adjacent along the Y-axis direction and a gap 142 located between the two mirror elements 141 (or distributed along the outer edge of the two mirror elements 142). The reflectance of the mirror group 140-2 including the gap 142) is shown. The horizontal axis of the graph shown in FIG. 8A indicates the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. In particular, FIG. 8A shows the reflectivity R (0, 0) of the mirror group 140-2 including two mirror elements 141 in the 0 state and the mirror group 140- including two mirror elements 141 in the π state. The reflectance R (π, π) of 2 is shown. If the relationship of reflection amplitude r (0) = − reflection amplitude r (π) is established, the reflectance R (0, 0) and the reflectance R (π, π) should match. However, as shown in FIG. 8A, depending on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a, the reflectance R (0, 0) and the reflectance R (π, π ) Does not match. Further, as shown in FIG. 8A, the reflectance R (0, 0) and the reflectance R (() depend on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. Each of π, π) varies. Therefore, even when viewed from the reflectivity R (0, 0) and R (π, π) of the mirror group 140-2 specified using the simulation model, the actual or realistic reflection amplitudes r (0) and r It can be seen that (π) does not necessarily have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π).

  On the other hand, FIG. 8B shows the reflectivity R (0, π) of the mirror group 140-2 including a single mirror element 141 in the 0 state and a single mirror element 141 in the π state. As described above, the wavefront phase of the exposure light EL3 obtained by the mirror element 141 in the 0 state reflecting the exposure light EL2 is obtained by the mirror element 141 in the π state reflecting the exposure light EL2. Compared with the phase of the wavefront of the exposure light EL3, it differs by 180 degrees (π radians). Therefore, if the relationship of reflection amplitude r (0) = − reflection amplitude r (π) is established, the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the 0 state, and π The exposure light EL3 obtained by the mirror element 141 in the state reflecting the exposure light EL2 cancels each other. Therefore, if the relationship of reflection amplitude r (0) = − reflection amplitude r (π) is established, the reflectance R (0, π) should be zero. However, as shown in FIG. 8B, the reflectance R (0, π) does not become zero. Further, as shown in FIG. 8B, the reflectance R (0, π) varies depending on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. Therefore, even when viewed from the reflectance R (0, π) of the mirror group 140-2 specified using the simulation model, the actual or realistic reflection amplitudes r (0) and r (π) are the reflection amplitudes. It can be seen that r (0) = − reflection amplitude r (π) does not necessarily have an ideal or theoretical relationship.

  Therefore, from the ideal or theoretical reflection amplitudes r (0) and r (π) having an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π), wafer 161 is obtained. The actual or realistic intensity distribution (that is, the aerial image) of the exposure light EL3 above cannot always be estimated appropriately. For this reason, when the design variable related to the spatial light modulator 14 is set to an ideal or theoretical reflection amplitude r (0) or r (π), a desired device pattern is suitably applied to the wafer 161. There arises a technical problem that modulation pattern information that can be transferred is not always generated.

  On the other hand, the actual or realistic reflection amplitudes r (0) and r (π) do not necessarily have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). One reason is that, as described above, the exposure light EL2 is reflected through the portion of the mirror group 140-1 different from the reflecting surface 141a (for example, the structure in which the exposure light EL2 propagating through the gap 142 is reachable). Reflection of exposure light EL2 through the body). On the other hand, such a gap 142 can theoretically be eliminated by improving the manufacturing accuracy of the spatial light modulator 14. When the gap 142 disappears, the actual or realistic reflection amplitudes r (0) and r (π) have an ideal or theoretical relationship: reflection amplitude r (0) = − reflection amplitude r (π). It is also assumed that this is possible. However, an improvement in manufacturing accuracy up to a level at which the gap 142 is eliminated is technically difficult or causes an excessive deterioration in the yield of the spatial light modulator 14. Therefore, there is a limit to a technique for solving the technical problem described above using the improvement of the manufacturing accuracy of the spatial light modulator 14.

  Further, by forming a step on the upper surface of the support substrate 149, reflection of the exposure light EL2 through the structure that the exposure light EL2 propagating through the gap 142 is reachable (particularly toward the projection optical system 15). It is also assumed that the reflection of the exposure light EL2 can be prevented. However, it is technically difficult to form the step on the upper surface of the support substrate 149 with nanometer accuracy, or the yield of the spatial light modulator 14 is excessively deteriorated. Therefore, there is a limit to the technique for solving the above technical problem using the step formed on the upper surface of the support substrate 149.

  Therefore, in the present embodiment, as described above, a mirror group different from the reflective surface 141a is used to eliminate or cancel the influence of the reflection of the exposure light EL2 through the portion of the mirror group 140-1 different from the reflective surface 141a. Reflection amplitudes r (0) and r (π) taking into account the reflection of the exposure light EL2 through the portion 140-1 are used. For this reason, modulation pattern information capable of suitably transferring a desired device pattern to the wafer 161 is generated. As a result, the exposure apparatus 1 can expose the wafer 161 using the spatial light modulator 14 controlled based on the modulation pattern information so that a desired device pattern is suitably transferred.

  In the above description, the spatial light modulator 14 is a reflective spatial light modulator. However, the spatial light modulator 14 may be a transmissive spatial light modulator including a plurality of optical elements (for example, a plurality of transmissive pixels configured by liquid crystal elements or the like) each capable of transmitting the exposure light EL2. Good. In this case, instead of the above-described “reflection amplitude of the mirror group 140-1” as a design variable related to the spatial light modulator 14, “the portion where the transmission surface of the single optical element is located and the single optical element” A predetermined portion including a portion that is located between the element and another optical element adjacent to the single optical element and does not constitute a single optical element (particularly, does not constitute a transmission region that transmits the exposure light EL2). The transmission amplitude (that is, a parameter that directly or indirectly indicates the amplitude of light transmitted through the optical element included in the transmissive spatial light modulator 14) is used. As a result, the transmissive spatial light modulator can also enjoy the various effects described above.

  In the above description, the reflection amplitudes r (0) and r (π) are used in consideration of the reflection of the exposure light EL2 through the part of the mirror group 140-1 different from the reflection surface 141a. However, one of the reasons that modulation pattern information that can suitably transfer the desired device pattern to the wafer 161 may not be generated is that the actual or realistic reflection amplitude r (0) and r (π) does not always have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). Then, regardless of whether or not the reflection of the exposure light EL2 through the part of the mirror group 140-1 different from the reflecting surface 141a is considered, the values are different from each other (for example, the absolute values are different). The reflection amplitudes r (0) and r (π) may be used. For example, the CPU 21 does not use a simulation model or the like (in other words, without considering the reflection of the exposure light EL2 through the part of the mirror group 140-1 different from the reflection surface 141a), based on some standard, The reflection amplitudes r (0) and r (π) that have different values may be specified.

  Further, the reflection amplitude r (0) may change depending on the position of the mirror group 140-1. For example, the reflection amplitude r (0) of the mirror group 140-1 including the mirror element 141 located in the first region on the light modulation surface 14a is located in a second region different from the first region on the light modulation surface 14a. It may be different from the reflection amplitude r (0) of the mirror group 140-1 including the mirror element 141. Similarly, the reflection amplitude r (π) described above may change depending on the position of the mirror group 140-1. For example, the reflection amplitude r (π) of the mirror group 140-1 including the mirror element 141 located in the first region on the light modulation surface 14a includes the mirror element 141 located in the second region on the light modulation surface 14a. It may be different from the reflection amplitude r (π) of the mirror group 140-1. That is, at least one of the reflection amplitudes r (0) and r (π) may have position dependency.

(2-3-2) Second Specific Example of Design Variables Related to Spatial Light Modulator Next, a second specific example of design variables related to the spatial light modulator 14 will be described. Compared with the first specific example of the design variable related to the spatial light modulator 14, the second specific example of the design variable related to the spatial light modulator 14 shows the reflection amplitude of the mirror group 140-1 as the mirror group 140. -1 is different in that it is divided for each polarization component of incident light (for example, exposure light EL2) incident on -1. Other configuration requirements of the second specific example of the design variable related to the spatial light modulator 14 may be the same as other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Specifically, for example, when the light incident on the mirror group 140-1 includes K (where K is an integer of 2 or more) polarization components, the reflection amplitude of the mirror group 140-1 is A reflection amplitude directly or indirectly indicating the amplitude of the first polarization component of the light reflected by the group 140-1, and a second polarization component of the light reflected by the mirror group 140-1. The reflection amplitude that directly or indirectly indicates the amplitude of the reflection light, and the reflection amplitude that directly or indirectly indicates the amplitude of the K-th polarization component of the light reflected by the mirror group 140-1. It is divided into and. Thus, each design variable associated with the spatial light modulator 14 is the first polarization of the light reflected by the mirror group 140-1 that includes a single mirror element 141 in the (1-1) 0 state. Reflection amplitude directly or indirectly indicating component amplitude, (1-2) second polarization component of light reflected by mirror group 140-1 including a single mirror element 141 in the 0 state Of the light reflected directly or indirectly by the mirror group 140-1 including a single mirror element 141 in the (1-K) 0 state. Of the reflected amplitude directly or indirectly indicating the amplitude of the K-th polarization component, and (2-1) of the light reflected by the mirror group 140-1 including the single mirror element 141 in the π state Directly or indirectly of the first polarization component of The reflection amplitude, (2-2) directly or indirectly indicating the amplitude of the second polarization component of the light reflected by the mirror group 140-1 including the single mirror element 141 in the π state. The amplitude of the K-th polarization component of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-K) π state is directly reflected. Or it is set to either of the reflection amplitudes shown indirectly.

  Typically, the light incident on the mirror group 140-1 includes at least one of s-polarized light and p-polarized light. In this case, the reflection amplitude of the mirror group 140-1 is a reflection amplitude that directly or indirectly indicates the amplitude of the s-polarized light in the light reflected by the mirror group 140-1, and the mirror group 140-1. Of the reflected light is divided into reflection amplitudes that directly or indirectly indicate the amplitude of the p-polarized light. Therefore, each design variable related to the spatial light modulator 14 is (1-1) the amplitude of the s-polarized light in the light reflected by the mirror group 140-1 including the single mirror element 141 in the 0 state. Directly or indirectly and the amplitude of the p-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-2) 0 state. Directly or indirectly the reflection amplitude shown indirectly or the amplitude of the s-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-1) π state. The reflection amplitude directly and indirectly indicating the amplitude of the p-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-2) π state. Set to one of the amplitudes.

  Even when the second specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible. In addition, in the second specific example, even when the reflection characteristics of the mirror group 140-1 different from the reflection surface 141a are different for each polarization component, the above-described effects can be suitably enjoyed.

(2-3-3) Third Specific Example of Design Variables Related to Spatial Light Modulator Subsequently, referring to FIGS. 9A to 9D, design variables related to the spatial light modulator 14 A third specific example will be described. FIG. 9A is a graph showing reflection amplitudes r (0) and r (π) expressed on the complex plane. FIGS. 9B to 9D are plan views showing an example of the mirror group 140-2 used for specifying the reflection amplitudes r (0) and r (π) expressed by complex numbers, respectively. is there.

  Compared with the first specific example of the design variable related to the spatial light modulator 14, the third specific example of the design variable related to the spatial light modulator 14 represents the reflection amplitude of the mirror group 140-1 as a complex number. Is different. The third specific example of the design variable related to the spatial light modulator 14 is different from the first specific example of the design variable related to the spatial light modulator 14 in that the reflection amplitude of the mirror group 140-1 includes a complex component. It differs in that it gets. The other configuration requirements of the third specific example of the design variable related to the spatial light modulator 14 may be the same as the other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Specifically, for example, the reflection amplitudes r (0) and r (π) are parameters specified by Expression 4 and Expression 5, respectively. R (0) is the reflectance of the mirror group 140-1 including a single mirror element 141 in the 0 state. R (π) is the reflectance of the mirror group 140-1 including a single mirror element 141 in the π state. φ is the wavefront phase of the exposure light EL3 obtained by the mirror group 140-1 including the single mirror element 141 in the 0 state reflecting the exposure light EL2, and the single mirror element 141 in the π state. Is a difference between the phase of the wavefront of the exposure light EL3 obtained by reflecting the exposure light EL2.

  The reflection amplitude r (0) specified by the equation 4 and the reflection amplitude r (π) specified by the equation 5 are two angles forming an angle corresponding to the phase difference φ on the complex plane shown in FIG. It can be specified as a vector. In the examples shown in Formula 4 and Formula 5 and FIG. 9A, the reflection amplitude r (0) is expressed by a real number, while the reflection amplitude r (π) is expressed by a complex number. However, as can be seen from the graph shown in FIG. 9A, as long as the vector specifying the reflection amplitude r (0) and the vector specifying the reflection amplitude r (π) form an angle corresponding to the phase difference φ, the reflection is reflected. The amplitude r (0) may be expressed as a complex number, while the reflection amplitude r (π) may be expressed as a real number. Alternatively, both the reflection amplitudes r (0) and r (π) may be expressed by complex numbers. However, from the viewpoint of reducing the number of variables necessary for specifying the reflection amplitudes r (0) and r (π), one of the reflection amplitudes r (0) and r (π) is expressed as a real number. On the other hand, the other of the reflection amplitudes r (0) and r (π) is expressed by a complex number.

  In the third specific example, the reflection amplitudes r (0) and r (π) can be specified from the reflectance R (0), the reflectance R (π), and the phase difference φ as shown in Equations 4 and 5. is there. As described above, the reflectance R (0) and the reflectance R (π) can be specified using a simulation model or the like. However, the reflectance R (0) is equivalent to the reflectance R (0, 0) of the mirror group 140-2 including the two mirror elements 141 in the 0 state, as shown in FIG. 9B. The reflectance R (π) is equivalent to the reflectance R (π, π) of the mirror group 140-2 including the two mirror elements 141 in the π state, as shown in FIG. 9C. Therefore, in order to specify the reflection amplitudes r (0) and r (π), at least one of the reflectance R (0) and the reflectance R (0, 0), and the reflectance R (π) and the reflectance R It is sufficient that at least one of (π, π) is specified. The phase difference φ can be specified based on Equation 6. R (0, π) is the reflectivity of the mirror group 140-2 including the single mirror element 141 in the 0 state and the single mirror element 141 in the π state, and as described above, simulation is performed. It can be specified using a model or the like.

Therefore, even when at least one of the reflection amplitudes r (0) and r (π) is expressed as a complex number, the CPU 21 uses the simulation model or the like to reflect the reflectance R (0) or the reflectance R (0). , 0), reflectivity R (π) or reflectivity R (π, π) and reflectivity R (0, π), the reflection amplitudes r (0) and r (π) can be suitably specified It is.

  Here, with reference to FIGS. 10A and 10B, the reflection amplitude r (0) specified when the above-described specific numerical values are applied to the simulation model shown in FIG. 7A. ) And r (π) will be described. 10A and 10B show two mirror elements 141 adjacent to each other along the Y-axis direction and a gap 142 (or two mirror elements 141) positioned between the two mirror elements 141, respectively. It is a graph which shows the reflectance of the mirror group 140-2 including the clearance gap 142) distributed along the outer edge of at least one of these.

  FIG. 10A shows the reflectivity R (0, 0) specified using the simulation model when the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 143a is 210 nanometers. , Reflectivity R (π, π) and reflectivity R (0, π). As shown in FIG. 10A, according to the simulation model, the reflectance R (0, 0) is 0.798044092075 (= 79.8044092075%), and the reflectance R (π, π) is 0.728442390625 ( = 72.842223390625%), and the reflectance R (0, π) is 0.00551627243875 (= 0.5512267243875). As a result, according to Equation 6 described above, the phase difference φ is −0.947779245π. Therefore, the CPU 21 can suitably specify the reflection amplitudes r (0) and r (π) expressed by complex numbers.

  FIG. 10B shows the reflectivity R (0, 0) specified using the simulation model when the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 143a is 230 nanometers. , Reflectivity R (π, π) and reflectivity R (0, π). As shown in FIG. 10B, according to the simulation model, the reflectance R (0, 0) is 0.6653456432 (= 66.5345432%), and the reflectance R (π, π) is 0.8423836758 ( = 84.23836758%) and the reflectance R (0, π) is 0.0048019197165 (= 0.48019197165%). As a result, according to Equation 6 described above, the phase difference φ is −0.9655516375π. Therefore, the CPU 21 can suitably specify the reflection amplitudes r (0) and r (π) expressed by complex numbers.

  Even when the third specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible.

  In addition, in the third specific example, the following technical effects can be further enjoyed. Specifically, as described above, the spatial light modulator 14 causes each mirror element 141 to be in the 0 state or the state by causing the reflecting surface 141a of each mirror element 141 to coincide with either the reference plane A1 or the displacement plane A2. Transition to the π state. However, there is a possibility that there is a mirror element 141 that cannot make the reflecting surface 141a coincide with either the reference plane A1 or the displacement plane A2 due to the manufacturing error of the spatial light modulator 14. For example, the mirror element can only match the reflecting surface 141a with any plane located above the reference plane A1, located between the reference plane A1 and the displacement plane A2, or located below the displacement plane A2. 141 may exist. The reflection amplitude of the mirror group 140-1 having the reflection surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2 is an error of a complex component that is not originally intended or is not preferable. May be granted. Therefore, as described in the third specific example, when the design variable related to the spatial light modulator 14 is expressed by a complex number, the reflective surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2 is included. The influence of the error of the complex component added to the reflection amplitude of the mirror group 140-1 is reduced or eliminated. That is, in the third specific example, the influence of the error of the complex component given to the reflection amplitude of the mirror group 140-1 including the reflecting surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2 is reduced or reduced. As a result, modulation pattern information capable of suitably transferring a desired device pattern onto the wafer 161 is generated. As a result, the exposure apparatus 1 can expose the wafer 161 using the spatial light modulator 14 controlled based on the modulation pattern information so as to transfer a desired device pattern even more suitably.

(2-3-4) Fourth Specific Example of Design Variable Related to Spatial Light Modulator Subsequently, referring to FIG. 11A to FIG. 11D, the design variable related to the spatial light modulator 14 A fourth specific example will be described. FIG. 11A to FIG. 11D are plan views showing a mirror group 140-2 that defines a fourth specific example of design variables related to the spatial light modulator 14, respectively.

  The fourth specific example of the design variable related to the spatial light modulator 14 is compared with the first specific example of the design variable related to the spatial light modulator 14 of the mirror group 140-2 including two mirror elements 141. The difference is that the reflection amplitude is used. The other configuration requirements of the fourth specific example of the design variable related to the spatial light modulator 14 may be the same as the other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Specifically, as shown in FIGS. 11A to 11D, the fourth specific example of the design variable related to the spatial light modulator 14 is a plurality of mirror elements 141 included in the spatial light modulator 14. Shows the reflection amplitude of each mirror group 140-2 in the case where is divided in units of the mirror group 140-2 including two mirror elements 141 adjacent to each other. Hereinafter, for convenience of explanation, it is assumed that the two mirror elements 141 constituting each mirror group 140-2 are a first mirror element 141-21 and a second mirror element 141-22.

  The mirror group 140-2 includes a first mirror element 141-21 and a second mirror element 141-22 that are adjacent to each other along a predetermined direction. Specifically, the mirror group 140-2 includes a reflective surface 141a of the first mirror element 141-21 and a reflective surface 141a of the second mirror element 141-22. In other words, the mirror group 140-2 includes a portion where the reflecting surface 141a of the first mirror element 141-21 is located and a portion where the reflecting surface 141a of the second mirror element 141-22 is located. In the example shown in FIGS. 11A to 11D, the first mirror element 141-21 and the second mirror element 141-22 are adjacent to each other along the X-axis direction. However, the first mirror element 141-21 and the second mirror element 141-22 may be adjacent to each other along the Y-axis direction.

  In addition to the first mirror element 141-21 and the second mirror element 141-22, the mirror group 140-2 includes the first mirror element 141-21 and another mirror element 141 adjacent to the first mirror element 141-21. And a portion that does not constitute the first mirror element 141-21 (particularly, that does not constitute the reflecting surface 141a). Examples of the other mirror element 141 adjacent to the first mirror element 141-21 include the second mirror element 141-22 and another mirror element 141 different from the second mirror element 141-22. Further, the mirror group 140-2 is located between the second mirror element 141-22 and another mirror element 141 adjacent to the second mirror element 141-22, and does not constitute the second mirror element 141-22. (In particular, it does not constitute the reflecting surface 141a). Examples of the other mirror element 141 adjacent to the second mirror element 141-22 include the first mirror element 141-21 and another mirror element 141 different from the first mirror element 141-21. In other words, the mirror group 140-2 is adjacent to at least one of the first mirror element 141-21 and the second mirror element 141-22 and does not constitute the first mirror element 141-21 and the second mirror element 141-22. (In particular, it does not constitute the reflecting surface 141a). For example, the mirror group 140-2 includes a gap 142 (or a part of such a gap 142) distributed along the outer edge of at least one of the first mirror element 141-21 and the second mirror element 141-22. .

  Also in the fourth specific example, similarly to the first specific example, the reflection amplitude of the mirror group 140-2 passes through the first mirror element 141-21 and the second mirror element 141-22 constituting the mirror group 140-2. This parameter takes into account not only the reflectivity of the exposure light EL2 but also the reflectivity of the exposure light EL2 through the gap 142 in the mirror group 140-2. That is, the reflection amplitude of the mirror group 140-2 is not limited to the reflection of the exposure light EL2 through the reflection surface 141a of the first mirror element 141-21 and the second mirror element 141-22 constituting the mirror group 140-2. The parameter also takes into account the reflection of the exposure light EL2 through the structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-2 can reach.

  Since the mirror group 140-2 includes two mirror elements 141, the number of mirror groups 140-2 is half the number of mirror elements 141 included in the spatial light modulator 14. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-2) is half of the number of mirror elements 141. Therefore, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding two mirror elements 141. As a result, the N4 design variables associated with the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-2 including the corresponding two mirror elements 141, respectively. That is, the design variable related to the spatial light modulator 14 indicates the reflection amplitude of the N4 mirror groups 140-2 each including two mirror elements 141.

  As shown in FIG. 11 (a), both the first mirror element 141-21 and the second mirror element 141-22 can be in the zero state. Furthermore, as shown in FIG. 11B, both the first mirror element 141-21 and the second mirror element 141-22 can be in the π state. Furthermore, as shown in FIG. 11 (c), the first mirror element 141-21 is in the 0 state, while the second mirror element 141-22 is in the π state. Furthermore, as shown in FIG. 11D, the first mirror element 141-21 can be in the π state, while the second mirror element 141-22 can be in the 0 state. Therefore, each of the N4 design variables related to the spatial light modulator 14 can have a value of the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22 that are both in the 0 state. Reflection amplitude r (0, 0) of the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22 both in the π state, The reflection amplitude r (0, π) of the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22 in the π state, and the first mirror element 141-21 in the π state And the reflection amplitude r (π, 0) of the mirror group 140-2 including the second mirror element 141-22 in the 0 state. For this reason, when setting or adjusting the design variable related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to the reflection amplitude r according to the device pattern to be transferred to the wafer 161 or the like. It is set to any one of (0, 0), reflection amplitude (π, π), reflection amplitude (0, π), and reflection amplitude r (π, 0).

  However, depending on the conditions, the reflection amplitude (0, π) and the reflection amplitude (π, 0) may be the same. In this case, the CPU 21 may set each of the N4 design variables to any one of the reflection amplitude r (0, 0), the reflection amplitude (π, π), and the reflection amplitude (0, π). .

  The CPU 21 determines N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When N4 design variables related to the spatial light modulator 14 are determined, the states of N4 × 2 mirror elements 141 constituting the N4 mirror group 140-2 are determined. Specifically, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (0, 0), the two mirror elements 141 constituting the certain mirror group 140-2 are determined. It is determined that both states should be zero. Similarly, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (π, π), the states of the two mirror elements 141 constituting the certain mirror group 140-2 are determined. Are both determined to be in the π state. Similarly, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (0, π) or the reflection amplitude (π, 0), the mirror group 140-2 is configured. It is determined that one of the two mirror elements 141 is in the 0 state and the other of the two mirror elements 141 constituting the mirror group 140-2 is in the π state. . As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  Even when the fourth specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible. In addition, in the fourth specific example, the reflection amplitude considering not only the gap 142 distributed along the outer edge of the single mirror element 141 but also the gap 142 between two mirror elements 141 adjacent to each other is a design variable. Used as Therefore, modulation pattern information that can transfer a desired device pattern onto the wafer 161 more appropriately is generated.

(2-3-5) Fifth Specific Example of Design Variables Related to Spatial Light Modulator Next, referring to FIGS. 12A and 12B, design variables related to the spatial light modulator 14 A fifth specific example will be described. FIG. 12A is a plan view showing a mirror group 140-4 that defines a fifth specific example of design variables related to the spatial light modulator 14. FIG. 12B is a table showing combinations of states that the four mirror elements 141 constituting the mirror group 140-4 can take.

  The fifth specific example of the design variable related to the spatial light modulator 14 is N (where N is an integer of 3 or more) compared to the first specific example of the design variable related to the spatial light modulator 14. The difference is that the reflection amplitude of the mirror group 140-N including the mirror element 141 is used. The other configuration requirements of the fifth specific example of the design variable related to the spatial light modulator 14 may be the same as the other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Hereinafter, for simplification of description, an example in which the reflection amplitude of the mirror group 140-4 including the four mirror elements 141 is used as a design variable will be described. However, the following description is also applicable to an example in which the reflection amplitude of the mirror group 140-N including three mirror elements 141 or five or more mirror elements 141 is used as a design variable.

  Specifically, as shown in FIG. 12A, the fifth specific example of the design variable related to the spatial light modulator 14 includes a plurality of mirror elements 141 provided in the spatial light modulator 14 in 2 rows × 2 columns. The reflection amplitude of each mirror group 140-4 in the case where the mirror group 140-4 including four mirror elements 141 adjacent to each other in a matrix is divided into units is shown. However, the first mirror element 141-41 to the fourth mirror element 141-44 may be adjacent to each other in any manner. Below, for convenience of explanation, the four mirror elements 141 constituting each mirror group 140-4 are a first mirror element 141-41 and a second mirror adjacent to the first mirror element 141-41 along the X-axis direction. The element 141-42, the third mirror element 141-43 adjacent to the first mirror element 141-41 along the Y-axis direction, and the third mirror element adjacent to the second mirror element 141-42 along the Y-axis direction. It is assumed that the fourth mirror element 141-44 is adjacent to the 141-43 along the X-axis direction.

  Mirror group 140-4 includes first mirror element 141-41 to fourth mirror element 141-44 which are adjacent to each other in a matrix of 2 rows × 2 columns. Specifically, the mirror group 140-4 includes the reflecting surface 141a of the first mirror element 141-41, the reflecting surface 141a of the second mirror element 141-42, the reflecting surface 141a of the third mirror element 141-43, and the fourth. The reflective surface 141a of the mirror element 141-44 is included. In other words, the mirror group 140-4 includes a portion where the reflecting surface 141a of the first mirror element 141-41 is located, a portion where the reflecting surface 141a of the second mirror element 141-42 is located, and the third mirror element 141-43. It includes a portion where the reflecting surface 141a is located and a portion where the reflecting surface 141a of the fourth mirror element 141-44 is located.

  In addition to the first mirror element 141-41 to the fourth mirror element 141-44, the mirror group 140-4 includes the first mirror element 141-41 and another mirror element 141 adjacent to the first mirror element 141-41. And a portion that does not constitute the first mirror element 141-41 (particularly, that does not constitute the reflecting surface 141a). As an example of the other mirror element 141 adjacent to the first mirror element 141-41, the second mirror element 141-42, the fourth mirror element 141-44, the second mirror element 141-42, and the fourth mirror element 141 are used. Other mirror elements 141 different from -44 are mentioned. Further, the mirror group 140-4 is located between the second mirror element 141-42 and another mirror element 141 adjacent to the second mirror element 141-42, and does not constitute the second mirror element 141-42. (In particular, it does not constitute the reflecting surface 141a). As an example of another mirror element 141 adjacent to the second mirror element 141-42, the first mirror element 141-41, the third mirror element 141-43, the first mirror element 141-41 and the third mirror element 141 are used. Other mirror elements 141 different from -43 are mentioned. Further, the mirror group 140-4 is located between the third mirror element 141-43 and another mirror element 141 adjacent to the third mirror element 141-43, and does not constitute the third mirror element 141-43. (In particular, it does not constitute the reflecting surface 141a). As an example of another mirror element 141 adjacent to the third mirror element 141-43, the second mirror element 141-42, the fourth mirror element 141-44, the second mirror element 141-42, and the fourth mirror element 141 are used. Other mirror elements 141 different from -44 are mentioned. Further, the mirror group 140-4 is located between the fourth mirror element 141-44 and another mirror element 141 adjacent to the fourth mirror element 141-44, and does not constitute the fourth mirror element 141-44. (In particular, it does not constitute the reflecting surface 141a). As an example of the other mirror element 141 adjacent to the fourth mirror element 141-44, the first mirror element 141-41, the third mirror element 141-43, the first mirror element 141-41, and the third mirror element 141 are used. Other mirror elements 141 different from -43 are mentioned. In other words, the mirror group 140-4 is adjacent to at least one of the first mirror element 141-41 to the fourth mirror element 141-44 and constitutes the fourth mirror element 141-44 from the first mirror element 141-41. A portion that does not (particularly does not constitute the reflecting surface 141a) is included. For example, the mirror group 140-4 includes a gap 142 (or a part of such a gap) distributed along at least one outer edge of the first mirror element 141-41 to the fourth mirror element 141-44.

  In the fifth specific example, similarly to the first specific example, the reflection amplitude of the mirror group 140-4 is changed from the first mirror element 141-41 to the fourth mirror element 141-44 constituting the mirror group 140-4. This parameter takes into account not only the reflectivity of the exposure light EL2 but also the reflectivity of the exposure light EL2 through the gap 142 in the mirror group 140-4. That is, the reflection amplitude of the mirror group 140-4 is not limited to the reflection of the exposure light EL2 from the first mirror element 141-41 to the reflection surface 141a of the fourth mirror element 141-44 constituting the mirror group 140-4. This parameter also takes into account the reflection of the exposure light EL2 through the structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-4 can reach.

  Since the mirror group 140-4 includes four mirror elements 141, the number of mirror groups 140-4 is 1/4 of the number of mirror elements 141. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-4) is ¼ of the number of mirror elements 141. Therefore, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding four mirror elements 141. As a result, the N4 design variables associated with the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-4 including the corresponding four mirror elements 141, respectively. That is, the design variable related to the spatial light modulator 14 indicates the reflection amplitude of the N4 mirror groups 140-4 each including the four mirror elements 141.

  As shown in FIG. 12B, there are 16 combinations (arrangements) of states that the first mirror element 141-41 to the fourth mirror element 141-44 constituting the mirror group 140-4 can take. Specifically, one of the 16 types of combinations is a combination # 1 in which all of the first mirror element 141-41 to the fourth mirror element 141-44 are in the 0 state. One of the 16 types of combinations is a combination # 2 in which the first mirror element 141-41 is in the π state and the second mirror element 141-42 to the fourth mirror element 141-44 are in the 0 state. One of the 16 combinations is a combination in which the second mirror element 141-42 is in the π state and the first mirror element 141-41, the third mirror element 141-43, and the fourth mirror element 141-44 are in the 0 state. # 3. One of the 16 combinations is a combination in which the third mirror element 141-43 is in the π state and the first mirror element 141-41, the second mirror element 141-42, and the fourth mirror element 141-44 are in the 0 state. # 4. One of the 16 types of combinations is a combination # 5 in which the fourth mirror element 141-44 is in the π state and the first mirror element 141-41 to the third mirror element 141-43 are in the 0 state. One of the 16 kinds of combinations is a combination in which the first mirror element 141-41 and the second mirror element 141-42 are in the π state and the third mirror element 141-43 and the fourth mirror element 141-44 are in the 0 state. # 6. One of the 16 combinations is a combination in which the first mirror element 141-41 and the third mirror element 141-43 are in the π state and the second mirror element 141-42 and the fourth mirror element 141-44 are in the 0 state. # 7. One of the 16 combinations is a combination in which the first mirror element 141-41 and the fourth mirror element 141-44 are in the π state, and the second mirror element 141-42 and the third mirror element 141-43 are in the 0 state. # 8. One of the 16 combinations is a combination in which the second mirror element 141-42 and the third mirror element 141-43 are in the π state, and the first mirror element 141-41 and the fourth mirror element 141-44 are in the 0 state. # 9. One of the 16 combinations is a combination in which the second mirror element 141-42 and the fourth mirror element 141-44 are in the π state, and the first mirror element 141-41 and the third mirror element 141-43 are in the 0 state. # 10. One of the 16 combinations is a combination in which the third mirror element 141-43 and the fourth mirror element 141-44 are in the π state, and the first mirror element 141-41 and the second mirror element 141-42 are in the 0 state. # 11. One of the 16 types of combinations is a combination # 12 in which the first mirror element 141-41 to the third mirror element 141-43 are in the π state and the fourth mirror element 141-44 is in the 0 state. One of the 16 types of combinations is a combination in which the first mirror element 141-41, the second mirror element 141-42, and the fourth mirror element 141-44 are in the π state and the third mirror element 141-43 is in the 0 state. # 13. One of the 16 types of combinations is a combination in which the first mirror element 141-41, the third mirror element 141-43, and the fourth mirror element 141-44 are in the π state and the second mirror element 141-42 is in the 0 state. # 14. One of the 16 types of combinations is a combination # 15 in which the second mirror element 141-42 to the fourth mirror element 141-44 are in the π state and the first mirror element 141-41 is in the 0 state. One of the 16 types of combinations is a combination # 16 in which all of the first mirror element 141-41 to the fourth mirror element 141-44 are in the π state.

  Therefore, the values that can be taken by each of the N4 design variables related to the spatial light modulator 14 are the reflection amplitude r (0, 0, 0, 0) corresponding to the combination # 1, and the reflection amplitude corresponding to the combination # 2. r (π, 0, 0, 0), reflection amplitude r (0, π, 0, 0) corresponding to combination # 3, reflection amplitude r (0, 0, π, 0), combination corresponding to combination # 4 Reflection amplitude r (0, 0, 0, π) corresponding to # 5, reflection amplitude r (π, π, 0, 0) corresponding to combination # 6, reflection amplitude r (π, 0 corresponding to combination # 7 , Π, 0), reflection amplitude r (π, 0, 0, π) corresponding to combination # 8, reflection amplitude r (0, π, π, 0) corresponding to combination # 9, and combination # 10 Reflection amplitude r (0, π, 0, π), reflection amplitude r (0, 0, π, π), set corresponding to combination # 11 Reflection amplitude r (π, π, π, 0) corresponding to the combination # 12, reflection amplitude r (π, π, 0, π) corresponding to the combination # 13, reflection amplitude r (π,) corresponding to the combination # 14 0, π, π), the reflection amplitude r (0, π, π, π) corresponding to the combination # 15, or the reflection amplitude r (π, π, π, π) corresponding to the combination # 16. For this reason, when setting or adjusting design variables related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to the 16 types according to the device pattern to be transferred to the wafer 161 or the like. Set to one of the reflection amplitudes.

  However, depending on conditions, at least two of the 16 types of reflection amplitudes described above may be the same. In this case, the CPU 21 may use any one of two or more types of reflection amplitudes that are the same.

  The CPU 21 determines N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When N4 design variables related to the spatial light modulator 14 are determined, the states of N4 × 4 mirror elements 141 constituting the N4 mirror group 140-4 are determined. As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  Even when the fifth specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible. In addition, in the fifth example, not only the gap 142 distributed along the outer edge of the single mirror element 141 but also the gap 142 between two mirror elements 141 adjacent to each other along a predetermined direction is considered. The reflection amplitude is used as a design variable. In particular, in the fifth specific example, not only the gap 142 between two mirror elements 141 adjacent to each other along only one direction, but also two mirror elements 141 adjacent to each other along different directions. The reflection amplitude considering the gap 142 is used as a design variable. For example, in the fifth specific example, the gap 142 between two mirror elements 141 adjacent to each other along the X-axis direction, the gap 142 between two mirror elements 141 adjacent to each other along the Y-axis direction, and the X-axis The reflection amplitude considering the gap 142 between the two mirror elements 141 adjacent to each other along the oblique direction (for example, the diagonal direction of the mirror element 141) intersecting the direction or the Y-axis direction is used as a design variable. Therefore, modulation pattern information that can transfer a desired device pattern onto the wafer 161 more appropriately is generated.

(2-3-6) Sixth Specific Example of Design Variables Related to Spatial Light Modulator Next, a sixth specific example of design variables related to the spatial light modulator 14 will be described with reference to FIG. FIG. 13 is a plan view showing a mirror group 140-1 defining a sixth specific example of design variables related to the spatial light modulator 14.

  The sixth specific example of the design variable related to the spatial light modulator 14 is a group of mirrors in which the CPU 21 includes a single mirror element 141 as compared with the first specific example of the design variable related to the spatial light modulator 14. The difference is that the reflection amplitude of 140-1 is specified using the reflection amplitude of the mirror group 140-2 including the two mirror elements 141. Other configuration requirements of the sixth specific example of the design variable related to the spatial light modulator 14 may be the same as other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Specifically, as shown in FIG. 13, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and the first mirror. It is included in the mirror group 140-2 # 1 including the second mirror element 141-2 located on the −Y direction side of the element 141-1. Similarly, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the −X direction side of the first mirror element 141-1. Are included in the mirror group 140-2 # 2 including the third mirror element 141-3 located at the center. Similarly, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the + Y direction side of the first mirror element 141-1. It is included in the mirror group 140-2 # 3 including the fourth mirror element 141-4 located. Similarly, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the + X direction side of the first mirror element 141-1. It is included in the mirror group 140-2 # 4 including the fifth mirror element 141-5 located.

  In the sixth specific example, the CPU 21 specifies the reflection amplitude r # 1 of the mirror group 140-2 # 1 and the reflection amplitude r # 2 of the mirror group 140-2 # 2 in order to specify the reflection amplitude of the mirror group 140-1. Then, the average value of the reflection amplitude r # 3 of the mirror group 140-2 # 3 and the reflection amplitude r # 4 of the mirror group 140-2 # 4 is calculated. The CPU 21 handles the calculated average value as the reflection amplitude of the mirror group 140-1. That is, the CPU 21 specifies the reflection amplitude of the mirror group 140-1 by using the mathematical formula: reflection amplitude of the mirror group 140-1 = (r # 1 + r # 2 + r # 3 + r # 4) / 4.

  For example, in the example shown in FIG. 13, the first mirror element 141-1 is in the 0 state, the second mirror element 141-2 is in the π state, the third mirror element 141-3 is in the 0 state, and the fourth The mirror element 141-4 is in the π state, and the fifth mirror element 141-5 is in the 0 state. Therefore, the reflection amplitude of the mirror group 140-2 # 1 is the reflection amplitude r (0, π), and the reflection amplitude of the mirror group 140-2 # 2 is the reflection amplitude r (0, 0). The reflection amplitude of -2 # 3 is the reflection amplitude r (0, π), and the reflection amplitude of the mirror group 140-2 # 4 is the reflection amplitude r (0, 0). For this reason, in the example shown in FIG. 13, the reflection amplitude of the mirror group 140-1 is (r (0, π) + r (0, 0) + r (0, π) + r (0, 0)) / 4. .

  Even when the sixth specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible.

  The CPU 21 multiplies at least one reflection amplitude of the mirror group 140-2 # 1 to the mirror group 140-2 # 4 by a weighting coefficient, and then the mirror group 140-2 # 1 to the mirror group. The average value of the reflection amplitude of 140-2 # 4 may be calculated. For example, the weighting coefficient corresponding to the reflection amplitude r # 1 of the mirror group 140 # 1 is set to w # 1, the weighting coefficient corresponding to the reflection amplitude r # 2 of the mirror group 140 # 2 is set to w # 2, and the mirror group 140 # is set. If the weighting coefficient corresponding to the reflection amplitude r # 3 of 3 is w # 3 and the weighting coefficient corresponding to the reflection amplitude r # 4 of the mirror group 140 # 4 is w # 4, the CPU 21 sets the weight of the mirror group 140-1. Reflection amplitude = (r # 1 × w # 1 + r # 2 × w # 2 + r # 3 × w # 3 + r # 4 × w # 4) / 4 is used to specify the reflection amplitude of the mirror group 140-1. Also good.

  The CPU 21 may specify the reflection amplitude of the mirror group 140-1 using an arbitrary function F having the reflection amplitude of the mirror group 140-2 # 1 to the mirror group 140-2 # 4 as a variable. That is, the CPU 21 specifies the reflection amplitude of the mirror group 140-1 using the mathematical formula of reflection amplitude of the mirror group 140-1 = F (r # 1, r # 2, r # 3, r # 4). Also good.

  The CPU 21 specifies the reflection amplitude of the mirror group 140-1 including a single mirror element 141 using the reflection amplitude of the mirror group 140 including M1 (where M1 is an integer of 2 or more) mirror elements 141. May be. The CPU 21 specifies the reflection amplitude of the mirror group 140-2 including two mirror elements 141 using the reflection amplitude of the mirror group 140 including M2 (where M2 is an integer of 3 or more) mirror elements 141. Also good. The CPU 21 determines the reflection amplitude of the mirror group 140 including L (where L is an integer equal to or greater than 1) mirror elements 141, and M3 (where M3 is an integer satisfying L <M) mirror elements 141. You may specify using the reflection amplitude of group 140-M3.

(2-3-7) Seventh Specific Example of Design Variable Related to Spatial Light Modulator Next, a seventh specific example of the design variable related to the spatial light modulator 14 will be described. The seventh specific example of the design variable related to the spatial light modulator 14 is compared with the first specific example of the design variable related to the spatial light modulator 14, and the mirror group 140 includes the mirror element 141 in which the defect is generated. The difference is that the reflection amplitude considering defects is used as the reflection amplitude of -1. The other configuration requirements of the seventh specific example of the design variable related to the spatial light modulator 14 may be the same as the other configuration requirements of the first specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the first specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  As described above, normally, the design variable indicating the reflection amplitude of the mirror group 140 is set to one of the reflection amplitudes r (0) and r (π). However, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which a defect has occurred (hereinafter referred to as “defective mirror group 140-1” as appropriate) is the reflection amplitudes r (0) and r (π). It may be a different value. For this reason, if the design variable indicating the reflection amplitude of the defect mirror group 140-1 is uniformly set to one of the reflection amplitudes r (0) and r (π), a desired device pattern is suitable for the wafer 161. There is a possibility that the modulation pattern information that can be transferred to is not generated.

  Therefore, in the seventh specific example, the CPU 21 sets the design variable indicating the reflection amplitude of the defective mirror group 140-1 to the reflection amplitude r (defect) in consideration of the defect. Of course, when the reflection amplitude of the defect mirror group 140-1 matches either of the reflection amplitudes r (0) and r (π), the CPU 21 sets a design variable indicating the reflection amplitude of the defect mirror group 140-1. The reflection amplitude may be set to either r (0) or r (π). Note that the CPU 21 can specify the reflection amplitude r (defect) using a simulation model or the like, similarly to the reflection amplitudes r (0) and r (π).

  In the seventh specific example, the amplitude of the light (in other words, the state or characteristic of the light) that passes through the mirror element 141 in which a defect has occurred and the mirror element 141 in which no defect has occurred is adjusted to a desired amplitude that is a design value, for example. Therefore, it can be said that the CPU 21 obtains a driving amount for setting the state of each mirror element 141 to a predetermined state using information on the state of the mirror element 141 in which a defect has occurred. That is, in the seventh specific example, the CPU 21 obtains defect information related to the defect state of the mirror element 141 in which a defect has occurred, and uses the defect information to cause no defect in the mirror element 141 in which the defect has occurred. In order to adjust the amplitude of light from the mirror element 141 to a desired amplitude, a drive signal for setting the state of the mirror element 141 in which a defect has occurred to the first state (0 state or π state) is obtained, It can also be said that a drive signal for obtaining the second state (0 state or π state) of the mirror element 141 in which no defect has occurred is obtained.

  Even when the seventh specific example of the design variable related to the spatial light modulator 14 is used, the effects that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used are preferably enjoyed. Is possible. In addition, in the seventh specific example, when a defect occurs in the mirror element 141, the reflection amplitude considering the defect is used as a design variable. For this reason, even when the mirror element 141 has a defect, modulation pattern information that can transfer a desired device pattern onto the wafer 161 more appropriately is generated.

  An example of a defect that occurs in the mirror element 141 is a defect in which at least a part of the reflecting surface 141a is missing. An example of a defect that occurs in the mirror element 141 is a defect in which the mirror element 141 is fixed (that is, does not move). At this time, the mirror element 141 may be fixed in a state where the reflecting surface 141a coincides with the reference plane A1 or the displacement plane A2. Alternatively, the mirror element 141 may be fixed in a state where the reflecting surface 141a coincides with an arbitrary plane different from the reference plane A1 and the displacement plane A2. The arbitrary plane may be located above the reference plane A1, may be located between the reference plane A1 and the displacement plane A2, or may be located below the displacement plane A2. Good. As an example of the defect generated in the mirror element 141, there is a defect in which the hinge portion 144 cannot be bent so that the reflecting surface 141a coincides with the reference plane A1 or the displacement plane A2.

  Further, as an example of a defect that occurs in the mirror element 141, there is a defect (occurrence of a stroke error) in which the operation stroke of the mirror element 141 deviates from the design value d1. As an example of the defect generated in the mirror element 141, there is a defect (occurrence of an attitude error) in which the mirror element 141 in the 0 state or the π state is inclined with respect to the reference plane A1 or the displacement plane A2. As an example of the defect generated in the mirror element 141, there is a defect (occurrence of reflectance error) in which the reflectance deviates from the design value or the initial value due to deformation or lack of the reflecting surface 141a of the mirror element 141, surface roughness, or the like. . As an example of the defect generated in the mirror element 141, there is a defect in which the reflectance of the reflection surface 141a of the mirror element 141 changes depending on the position on the spatial light modulator 14. An example of a defect that occurs in the mirror element 141 is a defect in which the phase of light reflected by the mirror element 141 changes from a design value or an initial value.

  The design variable indicating the reflection amplitude of the defective mirror group 140-1 may be fixed to the reflection amplitude r (defect). That is, when the design variable is adjusted so that the cost function CF satisfies the termination condition, the design variable indicating the reflection amplitude of the defect mirror group 140-1 may not be adjusted. In this case, since the number of design variables to be adjusted is reduced, the processing load required for adjusting the design variables is reduced. In particular, when there is a defect in which the mirror element 141 is fixed (that is, it does not move), it is effective to fix the design variable indicating the reflection amplitude of the defective mirror group 140-1 to the reflection amplitude r (defect). is there. When the mirror element 141 is fixed in a state where the reflection surface 141a of the mirror element 141 is coincident with the reference plane A1, the reflection amplitude r (defect) coincides with r (0). When the mirror element 141 is fixed with the reflecting surface 141a of the mirror element 141 coinciding with the displacement plane A2, the reflection amplitude r (defect) coincides with r (π).

  The CPU 21 acquires defect information related to the defective mirror group 140-1 (or defect information related to the mirror element 141 in which a defect has occurred), and the reflection amplitude of the defective mirror group 140-1 is determined based on the acquired information. Design variables shown may be set or adjusted. For example, as an example of defect information regarding the defect mirror group 140-1, first defect information for identifying the mirror element 141 in which a defect has occurred can be cited. In this case, even if the CPU 21 sets the reflection variable r (defect) as a design variable indicating the reflection amplitude of the defective mirror group 140-1 including the mirror element 141 in which a defect has occurred, based on the first defect information. Good. For example, as an example of defect information regarding the defect mirror group 140-1, second defect information indicating the type of defect that has occurred can be cited. In this case, the CPU 21 sets a design variable indicating the reflection amplitude of the defective mirror group 140-1 appropriately based on the second defect information, according to the type of defect occurring in the mirror element 141, or the like. May be set to an appropriate reflection amplitude r (defect) specified using. For example, as an example of defect information regarding the defect mirror group 140-1, third defect information indicating the state of the device pattern transferred to the wafer 161 via the mirror element 141 in which a defect has occurred can be cited. In particular, the third defect information includes the state of the device pattern transferred to the wafer 161 when the spatial light modulator 14 is controlled to change the state of the mirror element 141 in which a defect has occurred (that is, the mirror element 141 Change in the state of the device pattern due to the change in the state of the device). In this case, the CPU 21 may determine whether or not the transferred device pattern is in an ideal or design acceptable state based on the third defect information. Furthermore, when the transferred device pattern is not in an ideal or design acceptable state, the CPU 21 determines that a defect has occurred in the mirror element 141 that contributed to the transfer of the device pattern. Also good. Furthermore, when it is determined that a defect has occurred in the mirror element 141 that has contributed to the transfer of the device pattern, the CPU 21 determines the type or degree of the defect (for example, the mirror element) based on the third defect information. It may be specified whether or not 141 is fixed and which plane the reflecting surface 141a is fixed to. Further, when it is determined that a defect has occurred in the mirror element 141 that has contributed to the transfer of the device pattern, the CPU 21 sets a design variable indicating a reflection amplitude of the defective mirror group 140-1 including the mirror element 141. The reflection amplitude r (defect) may be set.

(2-3-8) Eighth Specific Example of Design Variable Related to Spatial Light Modulator Next, an eighth specific example of the design variable related to the spatial light modulator 14 will be described with reference to FIG. FIG. 14 is a plan view showing a state of the plurality of mirror elements 141 included in the spatial light modulator 14.

  As described with reference to FIGS. 3A to 3C described above, in this embodiment, at least a part of one exposure target surface 110 is at least a part of another adjacent exposure target surface 110. May overlap. For example, at least a part of one exposure target surface 110 may overlap with at least a part of another exposure target surface 110 adjacent along the Y-axis direction. In this case, the device pattern to be transferred to the wafer 161 is transferred to the wafer 161 by a plurality of exposures. Accordingly, the state distribution of the plurality of mirror elements 141 constituting the spatial light modulator 14 moves by a predetermined step amount along the Y-axis direction for each pulse emission, according to the device pattern to be transferred to the wafer 161. For example, as shown in FIG. 14, the state distribution of the plurality of mirror elements 141 corresponding to the line-and-space pattern moves by a predetermined step amount along the Y-axis direction. The predetermined step amount corresponds to the amount of movement of the exposure target surface 110 (in other words, the amount of movement of the wafer stage 16). Specifically, the predetermined step amount corresponds to a value obtained by dividing the movement amount of the exposure target surface 110 (in other words, the movement amount of the wafer stage 16) by the projection magnification of the projection optical system 15.

  For this reason, when there is a mirror element 141 having a defect, an aerial image (that is, the exposure light EL3 on the wafer 161) in a certain region on the wafer 161 to which at least a part of the device pattern is transferred. (Intensity distribution) is the sum of the aerial image caused by the light reflected by the mirror element 141 having a defect and the aerial image caused by the light reflected by the mirror element 141 without a defect.

  Specifically, as shown in FIG. 14, it is assumed that a certain mirror element 141-81 provided in the spatial light modulator 14 has a defect. In this case, as shown in the diagram on the left side of FIG. 14, the first pattern portion of the device pattern is transferred at the timing when the exposure is performed by the k−1 (where k is an integer of 2 or more) pulse light emission. It is assumed that the first region portion on the wafer 161 to be exposed is exposed through the mirror element 141-81. On the other hand, from the mirror element 141-81 to the scanning direction (that is, the moving direction of the wafer stage 16 and the moving direction of the state distribution of the plurality of mirror elements 141, -Y axis direction in FIG. 14). Attention is paid to the mirror element 141-82 located at a position separated by a predetermined step amount toward. Then, the second region portion on the wafer 161 onto which the second pattern portion of the device pattern is transferred is exposed through the mirror element 141-82 at the timing when the exposure is performed by the (k-1) th pulse emission. The

  Subsequently, as shown in the diagram on the right side of FIG. 14, the second region portion on the wafer 161 onto which the second pattern portion of the device pattern is transferred at the timing when the exposure by the k-th pulse emission is performed, It exposes via the mirror element 141-81. That is, the aerial image in the second region portion on the wafer 161 onto which the second pattern portion of the device pattern is transferred is the aerial image and mirror element caused by the light reflected by the mirror element 141-81 in which the defect is generated. This is the sum of the aerial images resulting from the light reflected by the mirror element 141-82, which is located at a position separated by a predetermined step amount from the 141-81 in the direction opposite to the scanning direction and has no defect.

  Furthermore, at the timing when exposure is performed by the kth pulse emission, the first region portion on the wafer 161 to which the first pattern portion of the device pattern is transferred is directed from the mirror element 141-81 toward the scanning direction. Then, exposure is performed through mirror elements 141-83 located at positions separated by a predetermined step amount. That is, the aerial image in the first region portion on the wafer 161 onto which the first pattern portion of the device pattern is transferred is the aerial image and mirror element caused by the light reflected by the mirror element 141-81 in which the defect is generated. This is the sum of the aerial images resulting from the light reflected by the mirror element 141-83, which is located at a position separated from the 141-81 toward the scanning direction by a predetermined step amount and has no defect.

  In such a case, in the seventh specific example described above, the defect is considered as the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred (for example, the mirror element 141-81 in FIG. 14). The reflection amplitude is used. As a result, as described above, the aerial image caused by the light reflected by the mirror element 141 in which the defect has occurred and the mirror element 141 in which the defect has occurred are predetermined toward the scan direction side or the direction opposite to the scan direction. The sum of the aerial images resulting from the light reflected by the mirror element 141 that is located at a position separated by the step amount and has no defect is the ideal aerial image used to transfer the desired device pattern to the wafer 161. Design variables associated with the spatial light modulator 14 are preferably adjusted to match. As a result, modulation pattern information capable of suitably transferring a desired device pattern onto the wafer 161 is generated.

  On the other hand, in the eighth specific example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 in which the defect has occurred is the mirror element in which the defect has occurred. 141 is fixed to the same value as the reflection amplitude of the mirror group 140-1 including 141. In other words, not only the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred, but also the mirror group including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 in which the defect has occurred. As the reflection amplitude of 140-1, the reflection amplitude r (defect) in consideration of the defect is used.

  That is, substantially, the design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 in which the defect has occurred is transferred to the wafer 161. It is set based on a design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which a defect has occurred, regardless of the device pattern to be used. The design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 in which the defect has occurred is the mirror group including the mirror element 141 in which the defect has occurred. The value is uniformly fixed to the same value as the design variable indicating the reflection amplitude of 140-1.

  Specifically, in the example shown in FIG. 14, the reflection amplitude of the mirror group 140-1 including the mirror element 141-82 and the reflection amplitude of the mirror group 140-1 including the mirror element 141-83 are respectively The reflection amplitude r (defect) of the mirror group 140-1 including the element 141-81 is fixed.

  The other configuration requirements of the eighth specific example of the design variable related to the spatial light modulator 14 may be the same as the other configuration requirements of the seventh specific example of the design variable related to the spatial light modulator 14. For this reason, the same reference numerals are assigned to the same configuration requirements as the configuration requirements of the seventh specific example of the design variable related to the spatial light modulator 14, and the detailed description thereof is omitted.

  Even when the eighth specific example of the design variable related to the spatial light modulator 14 is used, the effect that can be enjoyed when the seventh specific example of the design variable related to the spatial light modulator 14 is used is preferably enjoyed. Is possible.

  In addition, in the eighth example, the design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred and the position separated by a predetermined step amount from the mirror element 141 in which the defect has occurred. The design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 to be fixed is fixed to r (def). For this reason, the mirror group including the mirror element 141 which shows the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred and includes a mirror element 141 located at a position separated from the mirror element 141 in which the defect has occurred by a predetermined step amount The design variable indicating the reflection amplitude of 140-1 does not have to be adjusted. In this case, since the number of design variables to be adjusted is reduced, the processing load required for adjusting the design variables is reduced.

  In the seventh specific example and the eighth specific example, the reflection amplitude of the mirror group 140-1 may be a reflection amplitude that does not consider the reflection of the exposure light EL2 through the gap 142 in the mirror group 140-1. Good. The reflection amplitude of the mirror group 140-1 may be a reflection amplitude considering only the reflection of the exposure light EL2 through the reflection surface 141a of the mirror element 141 included in the mirror group 140-1. For example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which no defect has occurred may be set to the above-described ideal or theoretical reflection amplitude (for example, +1 or −1). May be used. For example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which a defect has occurred is the reflection of the exposure light EL2 through the gap 142 in consideration of the ideal or theoretical reflection amplitude or the defect described above. The reflection amplitude r (defect) that is not considered may be set.

(2-4) Modified Examples of Cost Function Next , modified examples of the cost function CF will be described. The cost function CF ′ according to the modified example includes a so-called MEEF (Mask Error Enhancement Factor) term. An example of the MEEF term is shown in Equation 7 and Equation 8. Therefore, the cost function CF ′ according to the modified example is expressed by, for example, Expression 9.

  Even when the cost function CF ′ according to the modification is used, the effects that can be enjoyed when the above-described cost function CF is used can be suitably enjoyed. In addition, since the cost function includes the MEEF term, even if the mirror element 141 is defective, modulation pattern information that can transfer a desired device pattern onto the wafer 161 is generated. Is done.

  When the cost function CF ′ according to the modification is used, even if the mirror element 141 is defective, the seventh specific example or the eighth specific example of the design variable described above is not used. May be. In other words, when the cost function CF ′ according to the modified example is used, a desired device pattern is suitably transferred onto the wafer 161 even if the seventh specific example or the eighth specific example of the design variable described above is not used. Modulation pattern information that can be generated is generated.

  The configuration and operation of the exposure apparatus 1 and the pattern design apparatus 2 described with reference to FIGS. 1 to 14 are examples. Therefore, at least a part of the configuration and operation of the exposure apparatus 1 and the pattern design apparatus 2 may be modified as appropriate. Hereinafter, an example of modification of at least a part of the configuration and operation of the exposure apparatus 1 and the pattern design apparatus 2 will be described.

  In the above description, the exposure apparatus 1 is a dry type exposure apparatus that exposes the wafer 161 without using a liquid. However, the exposure apparatus 1 forms an immersion space including the optical path of the exposure light EL3 between the projection optical system 15 and the wafer 161, and exposes the wafer 161 through the projection optical system 15 and the immersion space. An immersion exposure apparatus may be used. Examples of the immersion exposure apparatus include, for example, European Patent Application Publication No. 1,420,298, International Publication No. 2004/055803 and US Pat. No. 6,952,253, which are incorporated herein by reference. No. specification etc.

  The exposure apparatus 1 may be a twin stage type or multi stage type exposure apparatus including a plurality of wafer stages 16. The exposure apparatus 1 may be a twin stage type or multistage type exposure apparatus including a plurality of wafer stages 16 and a measurement stage. An example of a twin stage type exposure apparatus is disclosed in, for example, US Pat. No. 6,341,007, US Pat. No. 6,208,407 and US Pat. No. 6,262,796, which are incorporated herein by reference. It is disclosed.

  The projection optical system 15 may be an equal magnification system or an enlargement system. The projection optical system 15 may be a refractive system that includes a refractive optical element but does not include a reflective optical element. The projection optical system 15 may be a reflective system that does not include a refractive optical element but includes a reflective optical element. The projection optical system 15 may be a refractive / reflective system including both a refractive optical element and a reflective optical element. The image projected by the projection optical system 15 may be an inverted image or an erect image.

The light source 11 may emit any light different from the ArF excimer laser light having a wavelength of 193 nm as the exposure light EL1. For example, the light source 11 may emit far ultraviolet light (DUV light: Deep Ultra Violet light) such as KrF excimer laser light having a wavelength of 248 nm. The light source 11 may emit vacuum ultraviolet light (VUV light: Vacuum Ultra Violet light) such as F ₂ laser light (wavelength 157 nm). The light source 11 may emit arbitrary laser light having a desired wavelength or other arbitrary light (for example, a bright line emitted from a mercury lamp, such as g-line, h-line, or i-line). As disclosed in US Pat. No. 7,023,610, the light source 11 is a single-wavelength laser beam in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser, for example, erbium (or , Both of erbium and yttrium) may be amplified by a fiber amplifier doped with them, and harmonics obtained by wavelength conversion to ultraviolet light using a nonlinear optical crystal may be emitted. The light source 11 is not limited to light having a wavelength of 100 nm or more, and may emit light having a wavelength of less than 100 nm. For example, the light source 11 may emit EUV (Extreme Ultra Violet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm). The exposure apparatus 1 may include an electron beam source that emits an electron beam that can be used as the exposure light EL1 in addition to or instead of the light source 11. The exposure apparatus 1 may include a solid-state pulse laser light source that generates harmonics of laser light output from a YAG laser or a solid-state laser (semiconductor laser or the like) in addition to or instead of the light source 11. The solid-state pulse laser light source has a wavelength that can be used as the exposure light EL1 is 193 nm (other wavelengths such as 213 nm, 266 nm, and 355 nm are possible) and a pulse laser beam with a pulse width of about 1 ns. Injectable at a frequency of about 2 MHz. The exposure apparatus 1 may include a beam source that emits an arbitrary energy beam that can be used as the exposure light EL1 in addition to or instead of the light source 11.

  The object to which the device pattern is transferred is not limited to the wafer 161, and may be an arbitrary object such as a glass plate, a ceramic substrate, a film member, or mask blanks. The exposure apparatus 1 may be an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the wafer 161. The exposure apparatus 1 may be an exposure apparatus for manufacturing a liquid crystal display element or for manufacturing a display. The exposure apparatus 1 may be an exposure apparatus for manufacturing at least one of a thin film magnetic head, an image sensor (for example, CCD), a micromachine, a MEMS, a DNA chip, and a mask or reticle used for photolithography. .

  The above-described exposure apparatus 1 may be manufactured by combining various subsystems including the above-described various components so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to maintain mechanical accuracy, adjustment processing for achieving mechanical accuracy may be performed on various mechanical systems before and after the combination. In order to maintain electrical accuracy, adjustment processing for achieving electrical accuracy may be performed on various electrical systems before and after the combination. In order to maintain optical accuracy, adjustment processing for achieving optical accuracy may be performed on various optical systems before and after assembly. The step of combining the various subsystems may include a step of making a mechanical connection between the various subsystems. The step of combining various subsystems may include a step of wiring connection of electric circuits between the various subsystems. The step of combining various subsystems may include a step of connecting the piping of the atmospheric pressure circuit between the various subsystems. In addition, before the process of combining various subsystems, the process of assembling each of the various subsystems is performed. After the process of combining the various subsystems is completed, the overall adjustment of the exposure apparatus 1 is ensured by performing overall adjustment. The exposure apparatus 1 may be manufactured in a clean room in which temperature, cleanliness, etc. are controlled.

  A microdevice such as a semiconductor device may be manufactured through the steps shown in FIG. The steps for manufacturing the microdevice are step S201 for performing the function and performance design of the microdevice, step S202 for adjusting the design variable based on the function and performance design (see FIG. 5 described above), and the base material of the device. Step S203 for manufacturing the wafer 161, Step S204 for exposing the wafer 161 using the exposure light EL3 obtained by the spatial light modulator 14 reflecting the exposure light EL2, and developing the exposed wafer 161, device assembly processing Step S205 including (processing such as dicing processing, bonding processing, and package processing) and step S206 for inspecting the device may be included.

  At least a part of the configuration requirements of each embodiment described above can be appropriately combined with at least another part of the configuration requirements of each embodiment described above. Some of the configuration requirements of the above-described embodiments may not be used. In addition, as long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in each of the above-described embodiments is incorporated as part of the description of the text.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the scope or spirit of the invention that can be read from the claims and the entire specification. A method, an exposure apparatus and exposure method, a device manufacturing method, a data generation method, and a program are also included in the technical scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 11 Light source 12 Illumination optical system 14 Spatial light modulator 14a Light modulation surface 141 Mirror element 142 Gap 15 Projection optical system 16 Stage 161 Wafer 17 Controller 2 Pattern design apparatus 21 CPU
22 Memory EL1, EL2, EL3 Exposure light

Claims (40)

In a control method for controlling a spatial light modulator that is used in an apparatus for transferring a pattern to an object and includes first and second optical elements whose states can be changed,
Setting first drive information for bringing the first optical element into a first state;
Changing the first drive information using information on the state of the second optical element. As an amplitude characteristic value indicating the amplitude of the light passing through the first optical element, a first characteristic value indicating the amplitude of the light passing through the first optical element in the first state, and the first state Obtaining a second characteristic value indicative of the amplitude of the light through the first optical element in a second state different from
The setting uses the amplitude characteristic value to set each state of the first and second optical elements,
The control method according to claim 1, wherein the first characteristic value is different from the second characteristic value. The setting of the state includes setting a state of the second optical element located at a position away from the first optical element by a predetermined distance using the amplitude characteristic value. Control method. The control method according to claim 3, wherein the setting causes the state of the second optical element to coincide with the state of the first optical element. The control method according to claim 1, further comprising transmitting the first drive information to the spatial light modulator. The control method according to any one of claims 1 to 5, further comprising: detecting a state of the first optical element and obtaining the information related to the state of the first optical element. The first optical element is an optical element that cannot reflect the light in an ideal reflection mode due to a defect or cannot transmit the light in an ideal transmission mode. The control method according to any one of the above. A method for controlling a spatial light modulator, wherein each state of a plurality of optical elements included in a spatial light modulator that modulates and emits incident light is set.
Identifying a state of at least one optical element of the plurality of optical elements;
Using information on the state of the at least one optical element to set the state of another optical element located at a predetermined distance from the at least one optical element among the plurality of optical elements. Control method. The spatial light modulator transfers a desired pattern to an object using the light emitted from the spatial light modulator,
The setting of the state includes setting a state of the other optical element regardless of the desired pattern using information on the state of the at least one optical element. Control method. The control method according to claim 8 or 9, wherein setting the state makes the state of the other optical element coincide with the state of the at least one optical element. The at least one optical element is an optical element that cannot reflect the light in an ideal reflection mode or cannot transmit the light in an ideal transmission mode due to a defect. The control method according to claim 10. The spatial light modulator transfers a desired pattern to the object by scanning and exposing the object using the light emitted from the spatial light modulator,
The control method according to claim 8, wherein the other optical element is separated from the at least one optical element by the predetermined distance along a scanning direction.   The control method according to claim 12, wherein the predetermined distance corresponds to a scanning distance for each scanning exposure. A method of controlling a spatial light modulator, wherein each state of a plurality of optical elements included in a spatial light modulator that modulates and emits incident light to transfer a desired pattern to an object is set,
Obtaining information on a change in the transfer state of the desired pattern when the state of at least one of the plurality of optical elements is changed;
Using the information to set a state of the at least one optical element. The state of the at least one optical element is changeable between a first state and a second state different from the first state;
Obtaining the information includes information regarding a formation state of the desired pattern when the at least one optical element is in the first state, and the desired state when the at least one optical element is in the second state. The control method according to claim 14, further comprising: obtaining information regarding a pattern formation state. The state of the at least one optical element is changeable between a first state and a second state different from the first state;
Obtaining the information includes information on a formation state of the desired pattern when the at least one optical element is in the first or second state, and the at least one optical element is in the first and second states. The control method according to claim 14, further comprising: obtaining information regarding a formation state of the desired pattern in a third state different from the first state. Each state of the plurality of optical elements can be changed between a first state and a second state different from the first state,
Setting the state means that the plurality of optical elements are set so that the pattern error is smaller than the pattern error in the formation state of the desired pattern when the array of the states of the plurality of optical elements is the first array. The control method according to any one of claims 14 to 16, comprising changing an array of element states. The optical element is a reflective element having a reflective surface that reflects the incident light as the optical surface,
The control method according to claim 1, wherein the reflection surface moves so as to change a position of the reflection surface along a traveling direction of the incident light. The state of the reflecting element is a first state in which the incident light is reflected, and the incident light is reflected by changing the phase of the incident light so that the phase of the incident light is different from the phase in the first state. The control method according to claim 18, wherein the control method is set to any one of a plurality of states including two states. Each of the plurality of optical elements is a reflective element having a reflective surface that reflects the incident light as the optical surface,
The control method according to claim 18, wherein the reflective element is capable of tilting the reflective surface about at least one axis. In a control device for controlling a spatial light modulator that is used together with a device for transferring a pattern to an object and includes first and second optical elements whose states can be changed.
An input unit for inputting information on the state of the first optical element;
A controller that generates a drive signal for setting a state of the first and second optical elements to a predetermined state;
The controller is
Setting first drive information for bringing the first optical element into a first state;
A control device that changes the first drive information using information relating to a state of the second optical element. The controller is
As an amplitude characteristic value indicating the amplitude of the light passing through the first optical element, a first characteristic value indicating the amplitude of the light passing through the first optical element in the first state, and the first state Obtains a second characteristic value indicating the amplitude of the light through the first optical element in a different second state, and uses the amplitude characteristic value to determine the respective states of the first and second optical elements. Set,
The control device according to claim 21, wherein the first characteristic value is different from the second characteristic value. The control device according to claim 22, wherein the controller sets a state of the second optical element located at a position away from the first optical element by a predetermined distance using the amplitude characteristic value. The control device according to claim 23, wherein the controller matches the state of the second optical element with the state of the first optical element. The control device according to any one of claims 21 to 24, wherein the controller transmits the first drive information to the spatial light modulator. The control device according to any one of claims 21 to 25, wherein the controller detects a state of the first optical element and obtains the information related to the state of the first optical element. 27. The first optical element is an optical element that cannot reflect the light in an ideal reflection mode due to a defect or cannot transmit the light in an ideal transmission mode. The control device according to any one of the above. A control device for controlling a spatial light modulator comprising first and second optical elements whose states can be changed,
The control apparatus which sets each state of the said 1st and 2nd optical element by performing the control method as described in any one of Claims 1-20. A spatial light modulator;
A controller for controlling the spatial light modulator,
The said controller is an exposure apparatus which determines each state of the 1st and 2nd optical element with which the said spatial light modulator is provided by performing the control method as described in any one of Claims 1-20. An exposure method for exposing a pattern to an object,
A state of the first and second optical elements included in the spatial light modulator is determined using the control method according to any one of claims 1 to 20,
An exposure method for exposing the object using light exposure through the spatial light modulator. Using the exposure method according to claim 30, the object coated with a photosensitive agent is exposed, a desired pattern is transferred to the object,
Developing the exposed photosensitive agent to form an exposure pattern layer corresponding to the desired pattern,
A device manufacturing method for processing the object through the exposure pattern layer. A data generation method for generating control data of a spatial light modulator that is used together with an exposure apparatus that transfers a desired pattern to an object and includes first and second optical elements that can change their respective states,
Setting first drive information for bringing the first optical element into a first state;
Using the information about the state of the second optical element to change the first drive information to generate second drive information;
Generating setting data indicating the state of the first optical element included in the spatial light modulator from the second driving information as the control data. A data generation method for generating control data of a spatial light modulator provided in an exposure apparatus that transfers a desired pattern to an object,
Obtaining first information about the desired pattern;
Obtaining second information regarding the characteristics of the spatial light modulator;
Using the first information and the second information to generate setting data indicating the states of a plurality of optical elements included in the spatial light modulator as the control data. Generating the setting data includes
Obtaining an amplitude characteristic value indicating an amplitude of light through a predetermined portion including the first portion where the optical surface of the first optical element is located among the plurality of optical elements;
Setting each state of the plurality of optical elements using the amplitude characteristic value, and
The predetermined portion is a second portion that is located between the first optical element and a second optical element adjacent to the first optical element and does not constitute the plurality of optical elements; and the first optical element 34. The data generation method according to claim 33, comprising: the first portion on which the optical surface of an element is located. Generating the setting data includes
A first characteristic indicating an amplitude of the light via the at least one optical element in a first state as an amplitude characteristic value indicating the amplitude of the light via the at least one optical element of the plurality of optical elements. Identifying a value and a second characteristic value indicative of the amplitude of the light through the at least one optical element in a second state different from the first state;
Setting each state of the plurality of optical elements based on the amplitude characteristic value, and
The data generation method according to claim 33, wherein the first characteristic value is different from the second characteristic value. Generating the setting data includes
Identifying a state of at least one optical element of the plurality of optical elements;
Using information on the state of the at least one optical element to set the state of another optical element located at a predetermined distance from the at least one optical element among the plurality of optical elements. The data generation method according to claim 33. Generating the setting data includes
Obtaining information regarding a change in the formation state of the pattern when the state of at least one of the plurality of optical elements is changed;
The data generation method according to claim 33, further comprising: setting a state of the at least one optical element using the information. The data generation method according to any one of claims 33 to 37, wherein the information related to the desired pattern includes information related to a design layout.   21. A program for causing a controller connected to the spatial light modulator and changing a state of each of the plurality of optical elements to execute the control method according to any one of claims 1 to 20.   A program for causing a computer to execute the data generation method according to any one of claims 32 to 38.