JP2017092356A - Diamond processing method - Google Patents
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- JP2017092356A JP2017092356A JP2015223559A JP2015223559A JP2017092356A JP 2017092356 A JP2017092356 A JP 2017092356A JP 2015223559 A JP2015223559 A JP 2015223559A JP 2015223559 A JP2015223559 A JP 2015223559A JP 2017092356 A JP2017092356 A JP 2017092356A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 46
- 239000010432 diamond Substances 0.000 title claims abstract description 46
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims abstract description 24
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 8
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
Description
本発明は、ダイヤモンドの加工方法に関し、特にエッチング処理による加工方法に係る。 The present invention relates to a diamond processing method, and more particularly, to a processing method by etching.
ダイヤモンドは、硬くて化学的にも安定な物質であり、加工が困難な物質の１つである。
そこで、従来から反応性エッチング（ＲＩＥ）や誘導結合プラズマエッチング（ＩＣＰ）等が採用されている。
これらのエッチング加工方法は、専用の装置が必要で高価となるだけでなく、エッチングによるダイヤモンド表面へのダメージが大きい問題がある。
特許文献１には、不活性ガス及びハロゲン含有ガスからなる混合ガスを使用しているが、プラズマエッチング加工である点で上記と同様の課題を有している。
Diamond is a hard and chemically stable material, and is one of the materials that are difficult to process.
Therefore, conventionally, reactive etching (RIE), inductively coupled plasma etching (ICP) and the like have been adopted.
These etching methods require a dedicated apparatus and are expensive, and there is a problem that the diamond surface is greatly damaged by etching.
Patent Document 1 uses a mixed gas composed of an inert gas and a halogen-containing gas, but has a problem similar to the above in that it is a plasma etching process.
本発明は、ダイヤモンド表面へのダメージが少なく、高速で低コストのエッチングによるダイヤモンド加工方法の提供を目的とする。 It is an object of the present invention to provide a diamond processing method by etching at a high speed and low cost with little damage to the diamond surface.
本発明に係るダイヤモンドの加工方法は、ダイヤモンドの加工部位に金属又は半金属及びその合金あるいは無機化合物の膜を形成するステップと、不活性ガス及びＨ２Ｏの混成ガス又は真空下でＨ２Ｏを用いて前記膜を形成した部位をエッチング加工するステップとを有することを特徴とする。
ここで、不活性ガス及びＨ２Ｏの混成ガス又は真空下でＨ２Ｏを用いてエッチング加工する温度は５００℃以上で、前記膜の溶融温度以下の雰囲気温度で行われるのが好ましい。
The diamond processing method according to the present invention includes a step of forming a film of a metal, a semimetal, an alloy thereof, or an inorganic compound at a diamond processing site, a mixed gas of inert gas and H 2 O, or H 2 O under vacuum. And a step of etching the portion where the film is formed using the method.
Here, in under mixed gas or vacuum inert gas and H 2 O temperature processed by etching using of H 2 O is 500 ° C. or higher, preferably carried out at a melt temperature below the ambient temperature of the film.
従来のエッチング加工は、エッチングしない部分をマスキングする方法が一般的であるのに対して、本発明はダイヤモンドの表面は直接エッチング作用がなく、金属又は半金属及びその合金あるいは無機化合物の膜を介して、この膜形成した部分のダイヤモンドをエッチングする点に特徴がある。
高温気体状のＨ２Ｏは、ダイヤモンドの表面に対して直接的にはエッチング作用がない。
しかし、ダイヤモンド表面に上記の膜を形成し、Ｈ２Ｏでエッチングすると膜中にカーボンが固溶し、ダイヤモンド表面をエッチングする作用があることが、本発明者らによって見出されたものである。
このような膜としては、Ｎｉ，Ｃｏ，Ｃｕ，Ｍｎ，Ｃｒ，Ｆｅ，Ｖ，Ｍｏ，Ｒｕ，Ｗ及びそれらの合金、またそれらの無機化合物が例として挙げられ、無機化合物には酸化物，水酸化物，炭化物が例として挙げられる。
また、半金属であるＳｉの酸化物やＡｌの酸化物が例として挙げられる。
In the conventional etching process, a method of masking a portion that is not etched is generally used. On the other hand, in the present invention, the surface of diamond has no direct etching action, and a metal, a semimetal, an alloy thereof, or an inorganic compound film is used. Thus, the feature is that the diamond in the portion where the film is formed is etched.
Hot gaseous H 2 O has no direct etching action on the diamond surface.
However, the present inventors have found that when the above film is formed on the diamond surface and etched with H 2 O, carbon is dissolved in the film and the diamond surface is etched. .
Examples of such films include Ni, Co, Cu, Mn, Cr, Fe, V, Mo, Ru, W, and alloys thereof, and inorganic compounds thereof. Examples of inorganic compounds include oxides, water, Examples include oxides and carbides.
Further, examples thereof include oxides of Si and Al, which are metalloids.
本発明にて不活性ガスは、アルゴン，ヘリウム，窒素のガスが例として挙げられ、Ｈ２Ｏの混合方法に制限はなく、例えば不活性ガスを水中に投入し、バブリングにより混合させてもよく、また気体にしたＨ２Ｏを混合してもよい。
本発明は、ダイヤモンドの表面に形成した膜へのカーボンの固溶促進を目的にＨ２Ｏを反応させる点に特徴がある。
従って、真空下においてＨ２Ｏガスを投入してもよい。
例えば、電気炉の中に上記膜を形成したダイヤモンドを置き、５００℃〜１５００℃（膜が溶融しない範囲）、好ましくは７００℃〜１１００℃に加熱した中にＨ２Ｏを混合させたガスを流入させてもよい。
Ｈ２Ｏの量は、混合ガス中に０．０１％以上含有していればよく、好ましくは０．０１％〜３０％、さらに好ましくは０．０１％〜５％の範囲である。
また、ダイヤモンドの表面に形成する膜の厚みは、Ｈ２Ｏとの反応性を考慮し、１ｎｍ〜１ｍｍ、好ましくは１００ｎｍ〜１μｍの範囲がよい。
Examples of the inert gas in the present invention include argon, helium, and nitrogen gases, and there is no limitation on the method of mixing H 2 O. For example, an inert gas may be introduced into water and mixed by bubbling. Further, H 2 O in a gas state may be mixed.
The present invention is characterized in that H 2 O is reacted for the purpose of promoting solid solution of carbon in a film formed on the surface of diamond.
Therefore, H 2 O gas may be injected under vacuum.
For example, a diamond in which the above film is formed is placed in an electric furnace, and a gas in which H 2 O is mixed while being heated to 500 ° C. to 1500 ° C. (in a range where the film does not melt), preferably 700 ° C. to 1100 ° C. It may be allowed to flow.
The amount of H 2 O may be 0.01% or more in the mixed gas, preferably 0.01% to 30%, more preferably 0.01% to 5%.
The thickness of the film formed on the surface of the diamond is in the range of 1 nm to 1 mm, preferably 100 nm to 1 μm, considering the reactivity with H 2 O.
本発明は、ダイヤモンドの加工を施したい部位に上記の膜を形成し、これを５００℃〜１５００℃の不活性ガスとＨ２Ｏとの混合ガス雰囲気中、あるいは真空下でＨ２Ｏガス雰囲気中に配置するだけで、上記膜を介してエッチングできる。
よって、エッチングガスは、直接ダイヤモンドをアタックしないので、エッチングダメージが殆どなく、高速で安価にエッチング加工できる。
また、詳細は後述するが結晶方位が｛１１１｝面で停止する異方性エッチングであり、加工制御しやすい。
In the present invention, the above-mentioned film is formed at a site where diamond processing is desired, and this film is formed in a mixed gas atmosphere of an inert gas and H 2 O at 500 ° C. to 1500 ° C. or in a H 2 O gas atmosphere under vacuum. It is possible to etch through the film only by placing it inside.
Therefore, since the etching gas does not directly attack diamond, there is almost no etching damage, and etching can be performed at high speed and at low cost.
Although details will be described later, the etching is anisotropic etching in which the crystal orientation stops at the {111} plane, and the process control is easy.
本発明に係るダイヤモンドのエッチング加工方法を実験評価したので以下説明する。
図１に実験方法を示す。
不活性ガスとしてＮ２ガスを用いて、このＮ２ガスを容器に入れた水中に投入及びバブリングし、Ｎ２＋Ｈ２Ｏの混成ガスを生成させた。
エッチング処理装置として、電気炉を用いて内部を所定の高温に保持し、上記Ｎ２＋Ｈ２Ｏの混成ガスを電気炉中にフローさせた。
The diamond etching method according to the present invention was experimentally evaluated and will be described below.
FIG. 1 shows the experimental method.
Using N 2 gas as an inert gas, this N 2 gas was put into water and bubbled into a container to generate a mixed gas of N 2 + H 2 O.
As an etching processing apparatus, an electric furnace was used to maintain the inside at a predetermined high temperature, and the mixed gas of N 2 + H 2 O was allowed to flow into the electric furnace.
＜実験１＞
図２にプロセスを模式的に示す。
表面が（１００）面のダイヤモンド基板を用いて、表面を熱混酸（濃硫酸：濃硝酸＝３：１）で前処理した後に、真空蒸着法を用いて膜厚約３５０ｎｍのＮｉ膜を図２（ｂ）に示すように形成した。
その表面写真及び膜厚形状を図３（ａ）に示す。
次に図１に示した実験装置を用いて、電気炉内に上記Ｎｉ膜を形成したダイヤモンドを配置し、雰囲気温度を９００℃に設定した。
Ｎ２＋Ｈ２Ｏの混成ガスを電気炉中にフローさせ、１時間、エッチング処理した。
その状態を図２（ｃ）に模式的に示し、図３（ｂ）に表面写真を示す。
Ｎｉ膜を形成した部分のダイヤモンドがエッチングされているのが確認された。
これはＨ２ＯがＮｉ膜中にカーボンが固溶するのを促進したと推定される。
次に、熱混酸でＮｉを除去後に希硝酸で表面を洗浄した。
その模式図を図２（ｄ）に示し、写真を図３（ｃ）に示す。
エッチング形状としてはＮｉ膜部分が深堀されたトレンチ構造になっており、側面｛１１１｝面で底面が（１００）面からなる結晶面となっているのが確認された。
図３（ｃ）に測定結果を示すように
・エッチング深さ：３１．３μｍ
・エッチングレート：３１．３μｍ／ｈ
・角度θ１：５４．７°であった。
比較のためにＮｉ膜を表面に形成した上記と同様のダイヤモンド基板を電気炉内に配置し、Ｈ２ガスをフローさせたところ、Ｎｉ膜がない部分のダイヤモンドの表面のアタックはほとんど認められないものの、Ｎｉ膜部分のダイヤモンドのエッチングレートは０．４３μｍ／ｈとわずかであった。
また同様に、Ｎ２＋Ｈ２Ｏの替わりにＮ２ガスのみをフローさせたところ、ダイヤモンド表面へのアタックはないものの、エッチングレートは０．９６μｍ／ｈと小さかった。
なお、Ｎ２＋Ｈ２Ｏ混成ガスの替わりにＡｉｒをフローさせると、エッチングレート１５μｍ／ｈ程度認められるものの、Ｎｉ膜が形成されていない部分のダイヤモンド表面もエッチングされていた。
このことから、Ｎ２＋Ｎ２Ｏ混成ガス中のＨ２ＯがＮｉ膜を介してダイヤモンド表面をアタックしていることが明らかになった。
<Experiment 1>
FIG. 2 schematically shows the process.
Using a diamond substrate with a (100) surface, the surface was pretreated with a hot mixed acid (concentrated sulfuric acid: concentrated nitric acid = 3: 1), and then a Ni film having a thickness of about 350 nm was formed by vacuum evaporation. It was formed as shown in (b).
The surface photograph and the film thickness shape are shown in FIG.
Next, using the experimental apparatus shown in FIG. 1, the diamond on which the Ni film was formed was placed in an electric furnace, and the ambient temperature was set to 900.degree.
A mixed gas of N 2 + H 2 O was flowed into the electric furnace, and etching treatment was performed for 1 hour.
The state is schematically shown in FIG. 2 (c), and a surface photograph is shown in FIG. 3 (b).
It was confirmed that the diamond in the portion where the Ni film was formed was etched.
This is presumed that H 2 O promoted the solid solution of carbon in the Ni film.
Next, after removing Ni with hot mixed acid, the surface was washed with dilute nitric acid.
The schematic diagram is shown in FIG. 2 (d), and the photograph is shown in FIG. 3 (c).
The etched shape was a trench structure in which the Ni film portion was deeply drilled, and it was confirmed that the side surface was a crystal plane consisting of a {111} plane and the bottom surface being a (100) plane.
As shown in FIG. 3C, the measurement result is shown. Etching depth: 31.3 μm
Etching rate: 31.3 μm / h
The angle θ 1 was 54.7 °.
For comparison, when a diamond substrate similar to the above with a Ni film formed on the surface was placed in an electric furnace and H 2 gas was flowed, almost no attack on the surface of the diamond where there was no Ni film was observed. However, the etching rate of diamond in the Ni film portion was a slight 0.43 μm / h.
Similarly, when only N 2 gas was flowed instead of N 2 + H 2 O, the etching rate was as small as 0.96 μm / h, although there was no attack on the diamond surface.
Note that when Air was allowed to flow instead of the N 2 + H 2 O mixed gas, an etching rate of about 15 μm / h was observed, but the diamond surface where the Ni film was not formed was also etched.
This revealed that H 2 O in the N 2 + N 2 O mixed gas attacked the diamond surface via the Ni film.
＜実験２＞
次に結晶面が（１１０）面のダイヤモンド基板の表面に図４に示すように角度を変えてＮｉパターンを真空蒸着法により形成した。
このときのＮｉ膜度は約５００ｎｍであった。
このダイヤモンド基板を電気炉内に配置し、実験１と同様の条件にてアニール処理（エッチング処理）した。
すると０°Ｎｉパターンは、模式図では図５（ｃ）,（ｄ）に示し、写真では図６に示すようなエッチング加工形状を示し、４５°Ｎｉパターンでは模式図、図５（ｅ），（ｆ）写真、図７に示すようなエッチング加工形状となった。
ここで、エッチング側面は結晶方位｛１１１｝面で停止していることが確認され、図６に示した角度θ２は３５．２°であった。
<Experiment 2>
Next, an Ni pattern was formed on the surface of the diamond substrate having a crystal plane of (110) by changing the angle as shown in FIG.
The Ni film thickness at this time was about 500 nm.
This diamond substrate was placed in an electric furnace and annealed (etched) under the same conditions as in Experiment 1.
Then, the 0 ° Ni pattern is shown in FIGS. 5C and 5D in the schematic diagram, and the etching processing shape as shown in FIG. 6 is shown in the photograph, and the schematic diagram in the 45 ° Ni pattern is shown in FIGS. (F) Etching processed shape as shown in the photograph, FIG.
Here, it was confirmed that the etching side surface stopped at the crystal orientation {111} plane, and the angle θ 2 shown in FIG. 6 was 35.2 °.
＜実験３＞
実験１における条件にて、電気炉の雰囲気温度を１０００℃にした以外は同一の条件にてエッチング加工した。
すると５ｍｉｎで約０．３ｍｍのダイヤモンド基板に貫通孔が形成されており、さらにエッチング速度が速くなることが確認できた。
<Experiment 3>
Etching was performed under the same conditions as in Experiment 1 except that the electric furnace atmosphere temperature was 1000 ° C.
Then, it was confirmed that through holes were formed in the diamond substrate of about 0.3 mm in 5 minutes, and the etching rate was further increased.
上記実験は、ダイヤモンドの表面にＮｉ膜を形成した例であったが、その後の確認でＦｅ膜、Ｓｉの酸化膜、Ａｌの酸化膜でも同様のエッチングプロセスが確認された。
＜産業上の利用可能性＞
The above experiment was an example in which a Ni film was formed on the surface of diamond, but the same etching process was confirmed in subsequent confirmations with Fe films, Si oxide films, and Al oxide films.
<Industrial applicability>
本発明に係るダイヤモンドのエッチング加工方法は、エレクトロニクス分野における各種デバイスの製作、バルクダイヤモンドのカッテング方法等、ダイヤモンドの各種加工に利用できる。 The diamond etching method according to the present invention can be used for various processing of diamond such as production of various devices in the field of electronics, cutting method of bulk diamond, and the like.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4756794A (en) * | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
| JPH0139966B2 (en) * | 1979-04-13 | 1989-08-24 | Insuchi* Georogii Yakutsukogo Fuiriara Esu Oo Ee Enu Sssr | |
| JPH0513382A (en) * | 1991-07-03 | 1993-01-22 | Matsushita Electric Ind Co Ltd | Etching method |
| JPH0649669A (en) * | 1992-07-31 | 1994-02-22 | Chikyu Kankyo Sangyo Gijutsu Kenkyu Kiko | Etching method for diamond |
| JP2006335591A (en) * | 2005-05-31 | 2006-12-14 | Namiki Precision Jewel Co Ltd | Treating method for carbon material |
-
2015
- 2015-11-16 JP JP2015223559A patent/JP6644313B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0139966B2 (en) * | 1979-04-13 | 1989-08-24 | Insuchi* Georogii Yakutsukogo Fuiriara Esu Oo Ee Enu Sssr | |
| US4756794A (en) * | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
| JPH0513382A (en) * | 1991-07-03 | 1993-01-22 | Matsushita Electric Ind Co Ltd | Etching method |
| JPH0649669A (en) * | 1992-07-31 | 1994-02-22 | Chikyu Kankyo Sangyo Gijutsu Kenkyu Kiko | Etching method for diamond |
| JP2006335591A (en) * | 2005-05-31 | 2006-12-14 | Namiki Precision Jewel Co Ltd | Treating method for carbon material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7478335B2 (en) | 2020-05-28 | 2024-05-07 | 国立大学法人金沢大学 | How diamonds are processed |
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