JP2017092264A5 - - Google Patents
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- JP2017092264A5 JP2017092264A5 JP2015221010A JP2015221010A JP2017092264A5 JP 2017092264 A5 JP2017092264 A5 JP 2017092264A5 JP 2015221010 A JP2015221010 A JP 2015221010A JP 2015221010 A JP2015221010 A JP 2015221010A JP 2017092264 A5 JP2017092264 A5 JP 2017092264A5
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- JP
- Japan
- Prior art keywords
- gas
- plasma processing
- processing method
- material region
- plasma
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- 210000002381 Plasma Anatomy 0.000 claims 21
- 238000003672 processing method Methods 0.000 claims 16
- 239000000463 material Substances 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 241000282890 Sus Species 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 235000011194 food seasoning agent Nutrition 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011819 refractory material Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Claims (8)
前記第１の材料領域に対して前記第２の材料領域に選択的にＣ元素とＨ元素とＦ元素を含有する膜を堆積させる第１の工程と、
前記第１の工程後、前記被処理物をプラズマ処理する第２の工程とを有することを特徴とするプラズマ処理方法。 Plasma material and containing not Si element and O elements to the plasma processing an object to be processed in the processing chamber having a first material region which is at least arranged a second material region where refractory material is disposed at least In the processing method,
A first step of depositing a film containing selectively C element and H element and the element F in the second material region with respect to the first material region,
Wherein after the first step, a plasma processing method characterized in that it comprises a second step of plasma processing the object to be processed.
前記第１の工程は、Ｃ元素とＨ元素とＦ元素を含有するガスによるプラズマを用いて前記Ｃ元素とＨ元素とＦ元素を含有する膜を堆積させることを特徴とするプラズマ処理方法。 The plasma processing method according to claim 1,
The first step is a plasma processing method characterized by depositing a film containing the element C and H element and F element using a plasma due to gas having containing element C and H element and F element.
前記ガスは、ＣＨＦ３ ガス、ＣＨＦ３ ガスとＯ２ ガスの混合ガス、ＣＦ４ ガスとＨ２ ガスの混合ガス、Ｃ４Ｆ８ ガスとＨ２ ガスとＯ２ ガスの混合ガス、Ｃ４Ｆ８ ガスとＨ２ ガスとＮ２ ガスの混合ガス、Ｃ４Ｆ８ ガスとＨ２ ガスとＳＦ６ ガスの混合ガスまたはＣ４Ｆ８ ガスとＨ２ ガスとＣＦ４ ガスの混合ガスであることを特徴とするプラズマ処理方法。 The plasma processing method according to claim 2,
The gas is CHF 3 gas , mixed gas of CHF 3 gas and O 2 gas, mixed gas of CF 4 gas and H 2 gas, mixed gas of C 4 F 8 gas, H 2 gas and O 2 gas , C 4 F 8 gas and H 2 gas and N 2 gas mixed gas, or C 4 F 8 gas and H 2 gas and SF 6 gas mixed gas is a mixed gas of C 4 F 8 gas and H 2 gas and CF 4 gas And a plasma processing method.
前記難揮発性材料は、ステンレス（ＳＵＳ）またはイットリウム（Ｙ）元素もしくはアルミニウム（Ａｌ）元素を含む材料であることを特徴とするプラズマ処理方法。 In the plasma processing method according to any one of claims 1 to 3,
The plasma processing method, wherein the hardly volatile material is stainless steel (SUS) or a material containing an yttrium (Y) element or an aluminum (Al) element .
前記第１の工程は、前記第１の材料領域の表面温度が前記第２の材料領域の表面温度より大きい場合に行われることを特徴とするプラズマ処理方法。 In the plasma processing method according to any one of claims 1 to 4,
The plasma processing method is characterized in that the first step is performed when a surface temperature of the first material region is higher than a surface temperature of the second material region .
前記第１の材料領域の表面温度を上昇させるヒーティング工程を前記第１の工程の前に行うことを特徴とするプラズマ処理方法。 In the plasma processing method as described in any one of Claims 1 thru | or 5,
A plasma processing method , wherein a heating step for increasing a surface temperature of the first material region is performed before the first step .
前記第２の工程のプラズマ処理の一部または全てと同じプラズマ処理を行うシーズニング工程を前記第１の工程と前記第２の工程との間に行うことを特徴とするプラズマ処理方法。 In the plasma processing method according to any one of claims 1 to 6,
A plasma processing method , wherein a seasoning step for performing the same plasma processing as part or all of the plasma processing in the second step is performed between the first step and the second step .
前記Ｃ元素とＨ元素とＦ元素を含有する膜が前記第２の材料領域に被覆されている時、前記処理室に堆積する金属の反応生成物を除去するメタルクリーニング工程を前記第１の工程と前記第２の工程との間に行うことを特徴とするプラズマ処理方法。 In the plasma processing method as described in any one of Claims 1 thru | or 7,
When the second material region is covered with the film containing the C element, the H element, and the F element, a metal cleaning process for removing a metal reaction product deposited in the processing chamber is performed in the first process. And a plasma processing method, which is performed between the second step and the second step .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015221010A JP6568457B2 (en) | 2015-11-11 | 2015-11-11 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015221010A JP6568457B2 (en) | 2015-11-11 | 2015-11-11 | Plasma processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017092264A JP2017092264A (en) | 2017-05-25 |
| JP2017092264A5 true JP2017092264A5 (en) | 2018-06-07 |
| JP6568457B2 JP6568457B2 (en) | 2019-08-28 |
Family
ID=58768469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015221010A Active JP6568457B2 (en) | 2015-11-11 | 2015-11-11 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6568457B2 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687769B2 (en) * | 1991-07-09 | 1997-12-08 | ソニー株式会社 | Dry etching method |
| JP3288306B2 (en) * | 1997-07-22 | 2002-06-04 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| US7316785B2 (en) * | 2004-06-30 | 2008-01-08 | Lam Research Corporation | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
| JP2009188257A (en) * | 2008-02-07 | 2009-08-20 | Tokyo Electron Ltd | Plasma etching method, plasma etching apparatus, and storage medium |
| JP5450187B2 (en) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
| JP6235471B2 (en) * | 2012-06-20 | 2017-11-22 | 東京エレクトロン株式会社 | Seasoning method, plasma processing apparatus, and manufacturing method |
-
2015
- 2015-11-11 JP JP2015221010A patent/JP6568457B2/en active Active
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