JP2017083218A - Method for manufacturing x-ray imaging element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an X-ray imaging element that can examine patients with a small amount of X-rays by annealing a silicon layer to convert the silicon layer into polysilicon and increasing a photoelectric conversion efficiency and that can use a resin substrate.SOLUTION: The method for manufacturing an X-ray imaging element includes the steps of: forming a TFT circuit on the upper layer of a substrate; forming a photodiode converting fluorescence into an electric signal, on the upper surface of the TFT circuit; annealing a silicon layer forming the TFT circuit or forming the photodiode to make the silicon layer polycrystalline; and forming a fluorescence material layer on the upper layer of the photodiode, which converts X-rays into fluorescence.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a method for manufacturing an X-ray imaging device for taking a digital radiograph using X-rays.

  In recent years, the spread of X-ray imaging apparatuses is expanding as an X-ray diagnostic imaging apparatus that replaces imaging apparatuses using X-ray films. The X-ray imaging apparatus has the advantage that the time from X-ray imaging to image confirmation is very short for an X-ray film, the dynamic range of the image is wide, and no chemicals necessary for developing the X-ray film are required. have.

  Many of X-ray imaging apparatuses currently in practical use employ an indirect conversion method. In such an indirect X-ray imaging apparatus, an X-ray image transmitted through a human body (for example, a chest) of a subject is incident on the X-ray imaging apparatus and the image information is converted into an electrical signal. At this time, the X-ray imaging apparatus converts X-rays into visible light by a fluorescent conversion film that converts X-rays into visible light, and a two-dimensional image is obtained by a plurality of photodetectors arranged in a matrix. It is detected as information and output as an electrical signal to the outside.

  In such an indirect X-ray imaging apparatus, an X-ray image sensor is used. This X-ray imaging device converts X-rays transmitted through the human body of a subject into light using a scintillator, and detects light generated by the scintillator using a photodiode and a TFT. In this case, photodiodes and TFTs are generally known that are made of a thin film silicon film in an amorphous silicon (hereinafter referred to as “a-Si”) state (see, for example, Patent Document 1).

  In addition, there are some X-ray image pickup devices that are cassette-type for portability, but they may be dropped when carried. At that time, since the photodiodes and TFTs of the X-ray image capturing apparatus are formed on the glass substrate, the glass substrate may be broken, and in some cases, the apparatus may be broken. An apparatus using a flexible plastic substrate instead is known (for example, see Patent Documents 2 and 3).

  On the other hand, in order to reduce the amount of X-ray exposure to the human body of the subject for imaging, there is a demand for higher sensitivity of the X-ray imaging apparatus.

JP 2014-122903 A JP 2004-064087 A JP 2011-142168 A

  By the way, it is known that a-Si has a high electron mobility in a thin film having a high film forming temperature and exhibits good performance. However, when a flexible material such as a resin film is used, since the heat-resistant temperature of the base material is lower than that of glass, it cannot be heated at a sufficiently high temperature during a-Si film formation. There was a problem.

  Therefore, the present invention has been made in view of the above-described demand, and an X-ray imaging device capable of diagnosing a patient with a small amount of X-ray and facilitating application to a portable type, and its An object is to provide a manufacturing method.

  In order to solve the above problems, a method of manufacturing an X-ray imaging device according to one aspect of the present invention includes a TFT circuit forming step of forming a TFT circuit on an upper layer of a substrate, and converting fluorescence into an electric signal on the upper layer of the TFT circuit. A photodiode forming step for forming a photodiode to be performed, an annealing treatment step for annealing the silicon layer constituting the TFT circuit or the photodiode to polycrystallize, and fluorescence for converting X-rays into fluorescence on the upper layer of the photodiode A phosphor layer forming step of forming a body layer.

  The photodiode has a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, and a transparent electrode layer from the lower layer to the upper layer of the TFT circuit. Annealing treatment is performed using at least one of the thin film silicon layer and the n-type thin film silicon layer as a target.

  The photodiode has an upper layer, a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, and a transparent electrode layer in the upper layer of the TFT circuit. Annealing treatment is performed using a thin film silicon layer as a target.

  The TFT circuit has a capacitor and a gate electrode, an insulating film, a drain electrode and a thin film silicon layer, a source electrode and an insulating layer from the lower layer on the upper layer of the substrate. In the annealing step, an annealing process is performed using the thin film silicon layer as a target. It is a thing to give.

  The photodiode has a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, and a transparent electrode layer in this order from the lower layer to the upper layer of the TFT circuit. Annealing treatment is performed with the electrode portions of the p-type thin film silicon layer, the i-type thin film silicon layer, and the n-type thin film silicon layer as targets.

  Note that a flexible resin is preferably used for the substrate.

  An X-ray imaging device according to one embodiment of the present invention can perform diagnosis with a small amount of X-rays by performing annealing treatment and converting it into polycrystalline silicon to increase photoelectric conversion efficiency. Can also be easily applied.

It is explanatory drawing of the indirect type digital X-ray imaging apparatus using the X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is explanatory drawing of the electronic cassette using the X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is a typical top view of the X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor concerning one embodiment of the present invention. It is a comparison graph figure of the light reception sensitivity in the case of a-Si, p-Si, and a-Si + polycrystalline silicon in the X-ray image sensor concerning one embodiment of the present invention. It is sectional drawing of the X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is explanatory drawing of the laser apparatus applied to the manufacturing method of the X-ray image pick-up element which concerns on one embodiment of this invention. It is explanatory drawing of the flash lamp apparatus applied to the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is a flow chart showing an example of the manufacturing method of the X-ray image sensor concerning one embodiment of the present invention. It is sectional drawing of the other X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is sectional drawing of the other X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention. It is sectional drawing of the other X-ray image sensor manufactured with the manufacturing method of the X-ray image sensor which concerns on one embodiment of this invention.

  Next, an embodiment according to the present invention will be described with reference to the drawings. The X-ray imaging device shown as the present embodiment is applied to an indirect digital X-ray imaging apparatus (digital radiography). The indirect method is a method in which X-rays are received by the phosphor layer and converted into visible light, and then the visible light is converted into signal charges by an amorphous silicon photodiode or the like and led to a charge storage capacitor.

  As shown in FIG. 1, the indirect digital X-ray imaging apparatus 10 includes an X-ray generator 11, a supine imaging table 12, an electronic cassette 13, a console 14, and a monitor 15. Based on the control of the console 14, the electronic cassette 13 detects the X-rays that are transmitted from the X-ray generator 11 to the subject F, and generates an X-ray image. The console 14 performs various types of image processing on the X-ray image data transmitted from the electronic cassette 13 and causes the monitor 15 to display the X-ray image P.

  In the indirect digital X-ray imaging apparatus 10, the X-ray generator 11 irradiates X-rays from above toward the subject F who is supine on the supine position table 12, and the X-rays are exposed to the subject F. An X-ray image obtained by passing through is detected by the electronic cassette 13. Further, in photographing other parts such as limbs and elbows, the electronic cassette 13 can be placed on the lying position photographing table 12 and photographed.

  The electronic cassette 13 has a rectangular parallelepiped shape, and has, for example, an outer size conforming to the international standard ISO 4090: 2001 similar to a cassette for a half-cut size (383.5 mm × 459.5 mm) or IP. Yes. The external size of the electronic cassette 13 includes a four-cut size, a six-cut size, etc. in addition to the half-cut size described above, and is appropriately selected according to the imaging region.

  As shown in FIG. 2, the electronic cassette 13 electrically connects a panel-shaped X-ray imaging device 20 for detecting the intensity of X-rays and a signal processing circuit board 16 with a flexible printed circuit board 17, and a predetermined amount. The container 18 is portable.

  As shown in FIG. 3, the X-ray image sensor 20 has a structure having a large number of pixels 20a in a matrix form.

  As will be described later in detail in the present embodiment, the electronic cassette 13 is a TFT active matrix substrate (hereinafter referred to as TFT) as an X-ray imaging device 20 on an amorphous silicon (hereinafter simply referred to as “a-Si”). A flat panel detector (hereinafter simply referred to as “a flat panel detector”) that converts an incident X-ray into digital data after forming a photodiode layer on top of the TFT circuit and arranging an X-ray sensitive layer (scintillator). Referred to as “FPD”). In addition, an X-ray image represented by X-rays irradiated through the subject F is generated using the FPD, and the generated X-ray image is stored.

  The scintillator is, for example, a cesium iodide (CsI) phosphor, and converts X-rays into visible light. Thereby, visible light is photoelectrically converted by the photodiode layer, and the generated electric charge is accumulated in a capacitor (described later).

  At the time of signal reading of the X-ray image sensor, the capacitor charge is read through the silicon TFT circuit. The electric charge reaches the integrating amplifier, where the electric charge / voltage conversion is performed, and then A / D conversion is performed. The electric charge is stored in the memory (not shown) of the electronic cassette 13 as image data of the X-ray image P.

  Cesium iodide (CsI) has a relatively high conversion rate from X-rays to visible light, and since phosphors can be easily formed into a columnar crystal structure by vapor deposition, scattering of emitted light within the crystal is caused by the light guide effect. Therefore, the thickness of the phosphor layer can be increased. In order to further improve the light emission efficiency, a mixture of CsI and sodium iodide (NaI) in an arbitrary molar ratio may be deposited as sodium-activated cesium iodide (CsI: Na) using vapor deposition. In addition, a mixture of CsI and thallium iodide (TlI) in an arbitrary molar ratio is deposited as a thallium activated cesium iodide (CsI: Tl) on a support using vapor deposition, and then annealed as a post-process. By doing so, the visible conversion efficiency may be improved and used as an X-ray phosphor.

  At this time, if all of a-Si is polycrystallized (p-Si), the light absorption efficiency of a normal scintillator is likely to be lowered. For this reason, in this embodiment, a-Si + A polycrystalline (p-Si) structure is adopted. Note that all of the a-Si structures may be formed without gently performing annealing and generating a p-Si structure.

  As the FPD, a PSS (Penetration Side Sampling) type FPD and an ISS (Irradiation Side Sampling) type are known depending on the arrangement order of scintillators and TFT circuits. The PSS system is a system in which a TFT circuit is disposed below the scintillator from the X-ray incident side. Detect on the surface) side. On the other hand, in the ISS system, the relationship between the front and back of the FPD viewed from the incident side is opposite to that of the PSS system. In this embodiment, the case of the PSS method will be described, but application to the ISS method is also possible.

a-Si is formed using a vapor deposition method, a sputtering method, and various CVD methods. In the most frequently used plasma CVD method, silane (SiH ₄ ) and disilane (SiH ₆ ) as source gases are decomposed by glow discharge, and an a-Si thin film is grown on a substrate. A heat-resistant plastic is used for the substrate, and it usually grows at 400 ° C. or lower.

  a-Si has a relatively low defect density because hydrogen contained in the source gas is taken into the film and dangling bonds of silicon are terminated with hydrogen. However, the carrier mobility such as electrons and holes in the a-Si film is much smaller than the carrier mobility in the crystal because of the trap level.

  Therefore, a-Si has been widely used in TFT circuits because it has the advantage of low manufacturing costs.

  As described above, a-Si can form a semiconductor element by relatively simple processing, but the mobility of electrons is reduced due to its amorphousness. Therefore, the electron mobility greatly depends on the crystal structure of the substance.

  On the other hand, polysilicon (hereinafter referred to as “p-Si”) is located between a-Si and crystalline silicon (hereinafter simply referred to as “c-Si”) and has different orientations. It consists of single crystal silicon grains (single crystal grains). In p-Si, electrons are scattered at the boundary part (crystal grain boundary) between grains, and the mobility is lower than that of c-Si, but the carrier mobility is lower than that of amorphous a-Si. Much bigger.

  However, although p-Si is suitable for a memory or the like that requires a high information transmission speed, there has been a problem that the absorption efficiency of the scintillator in the light emitting region is very low, as shown in FIG.

  On the other hand, although a-Si also has a peak near the normal light emitting region of the scintillator, there is a problem that the sensitivity bandwidth (wavelength width) near the peak is very narrow and the sensitivity difference before and after the peak is severe. .

  Therefore, in order to increase the sensitivity width (peak width) of the scintillator to light emission while responding to the desire to suppress the exposure dose of X-rays by increasing the electron mobility, in this embodiment, a- Si + p-Si is adopted.

  FIG. 5 is a cross-sectional view showing an example of the X-ray imaging device 20 according to the present embodiment. In FIG. 5, in the X-ray imaging device 20, the TFT circuit 22 is formed on the upper layer of the a-Si substrate 21, the photodiode 23 is formed on the upper layer of the TFT circuit 22, and then the uppermost ITO of the photodiode 23 is formed. A transparent insulating layer 24 and a CsI phosphor layer (scintillator) 25 are formed on the transparent electrode layer 23e.

  The TFT circuit 22 includes a capacitor 22a, a gate electrode 22b, an insulating film 22c, a drain electrode 22d, a thin film silicon layer 22e, a source electrode 22f, and an insulating layer 22g on the upper layer of the a-Si substrate 21 from the lower layer.

  The photodiode 23 includes, from the lower layer, the lower electrode layer 23a, the n-type thin film silicon layer 23b, the i-type thin film silicon layer 23c, the p-type thin film silicon layer 23d, and the ITO transparent electrode layer 23e in the upper layer of the TFT circuit 22.

  In addition, regarding the formation procedure itself of these layers, for example, it conforms to a TFT panel manufacturing process similar to a manufacturing process of a known liquid crystal display device. However, in the case of a liquid crystal display device or the like, a signal wiring and a thin film transistor (TFT circuit) are formed on a glass substrate. In this embodiment, a flexible plastic substrate is applied.

  Since indium tin oxide (ITO) has a high transmittance in the visible light region, the ITO transparent electrode layer 23e has colorless transparency or approximate transparency. The characteristics of ITO are electrical conductivity and transparency. By depositing a film, the charge density is improved and the conductivity is also improved. For the ITO transparent electrode layer 23e, an electron beam vapor deposition method, a physical vapor deposition method, a sputter vapor deposition method, or the like can be used.

  In such a basic configuration, the X-ray imaging device 20 according to the present embodiment performs multiple laser annealing processes and flash lamp annealing processes on the silicon layers of the photodiodes 23 and the TFT circuits 22. Conversion to crystalline silicon increases the photoelectric conversion efficiency.

  In general, in the growth of a-Si, after the a-Si substrate 21 is installed in a plasma CVD apparatus, monosilane gas, diborane gas, phosphine gas, or the like is introduced as a reaction gas, and plasma is excited by high-frequency discharge. -Si film is formed.

  At this time, if the introduction gas is only monosilane gas, it becomes an i-type semiconductor, if diborane gas is mixed with monosilane gas, it becomes a p-type semiconductor, and if phosphine gas is introduced into the monosilane gas, it becomes an n-type semiconductor. Further, in order to terminate unnecessary dangling bonds of Si, a film is often formed by simultaneously adding hydrogen gas.

In the film formation of a-Si, it is known that a high-quality thin film silicon with high electron mobility can be obtained by forming a film at a high temperature such as 300 ° C. or more in general, at the time of film formation. Still, the electron mobility is as low as about 1 cm ² V / s.

  The electron mobility can also be increased by heating the entire a-Si substrate 21 at a dull temperature, for example, 1000 ° C. or higher. At this time, not only the a-Si substrate 21 but also the substrate temperature is increased at the same time, and even if the substrate is glass, the softening point is exceeded, and such a process cannot be endured.

Therefore, when the a-Si thin film is irradiated with powerful light all at once, the thin film is annealed at a high temperature instantaneously, and the polycrystallization of silicon is advanced, the electron mobility greatly increases to 100 cm ² V / s or more. The TFT circuit 22 and the photodiode 23 having good performance can be obtained.

  By the way, in order to perform the annealing process, for example, an annealing process using the laser device 30 as shown in FIG. 6 and an annealing process using the flash lamp device 40 as shown in FIG. 7 are possible.

  As shown in FIG. 6, the laser device 30 includes a laser oscillator 31, a collimator lens 32 that converts the laser light emitted from the laser oscillator 31 into parallel light, a mask 33, and an objective lens 34. Here, the objective lens 34 sets the focal length with the target silicon to be annealed as a target.

  As shown in FIG. 7, the flash lamp device 40 includes one or more light sources 41 and a reflection mirror 42. Here, the reflecting mirror 42 has a reflecting surface (parabolic surface) so that reflected light is imaged with the target silicon to be annealed as a target.

  As the target silicon to be annealed, for example, as shown in FIG. 5, the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b of the photodiode 23 are annealed. If necessary, an annealing process (see thick arrows in the figure) is performed so as to include regions in contact with the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b of the i-type thin film silicon layer 23c.

  As a result, the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b can be annealed to increase the conductivity, and the i-type thin film silicon layer 23c is made amorphous to improve the light absorption rate. It becomes possible.

<Method for Manufacturing X-ray Image Sensor 20>
Next, a method for manufacturing the X-ray imaging element 20 will be described based on the flowchart of FIG.

  First, an a-Si substrate 21 is prepared, and a TFT circuit forming step (step S1) for forming a TFT circuit 22 on the upper layer is performed. Next, a photodiode forming step (step S2) for forming (depositing) the photodiode 23 on the upper layer of the TFT circuit 22 is executed.

  The a-Si substrate 21 may be a metal or resin film in addition to glass. Examples of the material for the metal film include Al, Al alloy, Fe, Fe alloy, and those laminated. Resin film materials include polyesters such as polyethylene terephthalate, polybutylene phthalate, and polyethylene naphthalate, polystyrene polycarbonate, polyethersulfone, polyarylate, polyimide, polycycloolefin, norbornene resin, polyfluorotrifluoroethylene, and triacetyl cellulose. Etc.

Then, an annealing process step (step S3) is performed in which the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b of the formed photodiode 23 are irradiated with light to perform an annealing process. This annealing process is performed to polycrystallize the silicon layer. For example, the laser device 30 outputs 300 mJ / output to the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b having a thickness of 100 nm. Irradiation with a 10 cm ² laser (1 shot, 23 ns) is performed.

  Thereby, the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b are annealed to be polycrystallized.

  Next, after forming the transparent insulating layer 24 (step S4), the CsI phosphor layer (scintillator) 25 is formed and the phosphor layer forming step (step S5) is executed, whereby the X-ray imaging device 20 is formed. To manufacture.

  In this way, the X-ray imaging device 20 can perform an annealing process and convert it into polycrystalline silicon to increase the photoelectric conversion efficiency, thereby making it possible to diagnose a patient with a small X-ray dose and using a resin substrate. Therefore, application to a portable type can be facilitated.

  Incidentally, the X-ray imaging device 20 of the present invention is not limited to the above-described embodiment, and various technical designs can be made within the technical scope described in the scope of the claims within the scope of the invention. Changed forms are included.

  For example, in the above embodiment, the p-type thin film silicon layer 23d and the n-type thin film silicon layer 23b of the photodiode 23 are annealed. For example, as shown in FIG. The layer 23c may be annealed. Thereby, the conductivity of the i-type thin film silicon layer 23c can be improved.

  In this annealing process, for example, the focal position of the objective lens 44 (depth direction <depth> of the photodiode 23) can be adjusted to change the place where the annealing process is performed strongly. Thereby, the light condensing part can be strongly annealed. For example, when the light is focused on the surface, the surface can be strongly annealed, and when the light is focused on the inside, the inside can be strongly annealed.

  Further, the annealing treatment is not limited to the silicon layer constituting the photodiode 23. Specifically, as shown in FIG. 10, the annealing treatment is performed on the thin film silicon layer 22e of the TFT circuit 22. May be. Thereby, the conductivity of the TFT circuit 22 can be improved.

  Further, the annealing treatment is not limited to each layer unit. Specifically, as shown in FIG. 11, the lower electrode layer 23a of the photodiode 23, the n-type thin film silicon layer 23b, the i-type thin film. An annealing process may be performed across the silicon layer 23c, the p-type thin film silicon layer 23d, and the ITO transparent electrode layer 23e. Thereby, the electrode portion of the pixel can be made of polycrystallized silicon, and the periphery thereof can have an a-Si structure.

  Further, in the above embodiment, it is effective to use a normal glass substrate, but it is particularly effective when a flexible resin substrate is used. That is, since the resin substrate has low heat resistance, the temperature cannot be increased during the film formation of a-Si, and the electron mobility tends to be low when compared with glass. On the other hand, in the present embodiment, since the annealing process is performed by narrowing down the target, it is possible to make it difficult for such a problem related to heat resistance to occur, and a resin substrate can be used.

  Further, the flowchart shown in FIG. 8 does not limit the procedure of the present invention, and the procedure may be added / deleted or the order may be changed without departing from the spirit and technical idea of the invention. For example, the annealing process may be performed after step S5 instead of step S3 in the flowchart of FIG.

  In addition to the above, the methods according to the above embodiments may be used in appropriate combination. For example, as the silicon to be annealed (target silicon), for example, all of the silicon shown in FIGS. 5 and 9 may be applied.

  In addition, the present invention can be implemented with various modifications without departing from the spirit of the present invention.

  As described above, the method for manufacturing an X-ray imaging device according to the present invention can diagnose a patient with a small X-ray dose by performing annealing treatment and converting it into polycrystalline silicon to increase photoelectric conversion efficiency. In addition, since a resin substrate can be used, it has the effect that it can be easily applied to a portable type, and manufacture of an X-ray imaging device for taking a digital radiograph using X-rays. Useful for all methods.

20 X-ray imaging device 21 Amorphous silicon substrate 22 TFT circuit 23 Photodiode 25 CsI phosphor layer (scintillator)

Claims (6)

A TFT circuit forming step for forming a TFT circuit on the upper layer of the substrate;
A photodiode forming step of forming a photodiode for converting fluorescence into an electric signal on the TFT circuit;
An annealing treatment step of polycrystallizing the TFT layer or the silicon layer constituting the photodiode by annealing treatment;
A phosphor layer forming step of forming a phosphor layer for converting X-rays into fluorescence on the upper layer of the photodiode;
A method for manufacturing an X-ray imaging device including: The photodiode is
From the lower layer to the upper layer of the TFT circuit, it has a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, a transparent electrode layer,
In the annealing step,
The method for manufacturing an X-ray imaging device according to claim 1, wherein annealing is performed using at least one of the p-type thin film silicon layer and the n-type thin film silicon layer as a target. The photodiode is
From the lower layer to the upper layer of the TFT circuit, it has a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, a transparent electrode layer,
In the annealing step,
The method for manufacturing an X-ray imaging device according to claim 1, wherein annealing is performed using the i-type thin film silicon layer as a target. The TFT circuit is
On the upper layer of the substrate, from the lower layer, a capacitor and a gate electrode, an insulating film, a drain electrode and a thin film silicon layer, a source electrode, an insulating layer,
In the annealing step,
The method of manufacturing an X-ray imaging device according to any one of claims 1 to 3, wherein annealing is performed using the thin film silicon layer as a target. The photodiode is
From the lower layer to the upper layer of the TFT circuit, it has a lower electrode layer, an n-type thin film silicon layer, an i-type thin film silicon layer, a p-type thin film silicon layer, and a transparent electrode layer in this order,
In the annealing step,
5. The annealing process according to claim 1, wherein annealing is performed with electrode portions of the p-type thin film silicon layer, the i-type thin film silicon layer, and the n-type thin film silicon layer as targets. The manufacturing method of the X-ray image sensor of description.   6. The method of manufacturing an X-ray imaging device according to claim 1, wherein a flexible resin is used for the substrate.