JP2017063270A - Semiconductor integrated circuit device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem in deterioration of current detection accuracy, which is caused by wide variation in current mirror ratio due to characteristics of a power semiconductor device such as an IGBT.SOLUTION: An electronic apparatus comprises a power semiconductor device, a first semiconductor integrated circuit device and a second semiconductor integrated circuit device. The power semiconductor device includes a terminal for outputting a sense current. The first semiconductor integrated circuit device includes: an overcurrent detection circuit for detecting an overcurrent based on the sense current; and a temperature detection circuit for detecting a temperature of the power semiconductor device. The second semiconductor integrated circuit device includes: a storage device for storing a temperature characteristic of a current mirror ratio of the power semiconductor device; a temperature detection part for calculating a temperature based on an output of the temperature detection circuit; and an overcurrent detection control part for controlling the overcurrent detection circuit based on the temperature detected by the temperature detection part and the temperature characteristic of the current mirror ratio stored in the storage device.SELECTED DRAWING: Figure 27

Description

  The present disclosure relates to a semiconductor integrated circuit device, and can be applied to, for example, a semiconductor integrated circuit device that drives a power semiconductor device with a current sense function.

  The three-phase inverter circuit constituting the power conversion device is composed of six insulated gate bipolar transistors (IGBTs) and two free wheel diodes (FWDs) connected in antiparallel with these IGBTs in series. The series circuit has a configuration in which the series circuit is connected in parallel to the DC power source, and an inductance load such as an electric motor is connected to a connection point between the IGBTs of each series circuit. In an IGBT used for a power converter, an overcurrent protection circuit is provided to protect the IGBT from destruction when an overcurrent flows (for example, US Patent Application Publication No. 2014/0375333). As a current detection means for overcurrent, a part (current mirror circuit) for flowing a detection-dedicated (sense) current is provided separately from a part for flowing the main current of the IGBT, and the sense current (current mirror current) is detected to detect the main current. The detection means. Hereinafter, a value obtained by dividing the main current value by the sense current value is referred to as a current mirror ratio.

US Patent Application Publication No. 2014/0375333

Due to the characteristics of power semiconductor devices such as IGBTs, the variation in the current mirror ratio is large, and the current detection accuracy decreases.
Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

The outline of a representative one of the present disclosure will be briefly described as follows.
That is, the semiconductor integrated circuit device includes a circuit that corrects the variation in the current mirror ratio based on the characteristic data of the power semiconductor device.

  According to the semiconductor integrated circuit device, the accuracy of current detection can be improved.

The block diagram which shows a part of electric motor system which concerns on a comparative example. The figure for demonstrating the sense current of IGBT. The figure which shows the relationship between the current mirror ratio of IGBT, and the collector-emitter saturation voltage. The figure which shows the relationship between the current mirror ratio of IGBT, and the resistance for electric current detection. The figure which shows the relationship between the current mirror ratio of IGBT, and the gate-emitter voltage. The figure which shows the relationship between the current mirror ratio of IGBT, and temperature. The figure which shows the relationship between the current mirror ratio of IGBT, and collector current. 1 is a block diagram showing a configuration of an electric motor system according to Embodiment 1. FIG. The block diagram which shows the structure of the electronic device which is a part of the electric motor system of FIG. The block diagram which shows the function of the control circuit of FIG. 10 is a flowchart showing a method for manufacturing the electronic device of FIG. 10 is a flowchart showing initial setting processing at the time of manufacturing the electronic device of FIG. 9; 10 is a flowchart showing reference voltage change processing during normal operation of the electronic device of FIG. 9. 10 is a flowchart showing drive current confirmation processing during normal operation of the electronic apparatus of FIG. 9. FIG. 9 is a block diagram showing a configuration of an electronic device according to Modification Example 1. 16 is a flowchart showing a reference voltage changing process during normal operation of the electronic device of FIG. FIG. 9 is a block diagram illustrating a configuration of an electronic device according to Modification Example 2. FIG. 18 is a block diagram illustrating a configuration of a drive circuit in FIG. 17. The block diagram which shows the function of the control circuit of FIG. 18 is a flowchart showing an initial setting process at the time of manufacturing the electronic device of FIG. FIG. 9 is a block diagram showing a configuration of an electronic device according to Modification 3. The block diagram which shows the function of the control circuit of FIG. The flowchart which shows the initial setting process at the time of manufacture of the electronic device of FIG. FIG. 6 is a block diagram illustrating a configuration of an electronic device according to a second embodiment. The block diagram which shows the function of the control circuit of FIG. The flowchart which shows the initial setting process at the time of manufacture of the electronic device of FIG. 1 is a block diagram illustrating a configuration of an electronic device according to an embodiment. 1 is a block diagram showing a configuration of a semiconductor integrated circuit device according to a first embodiment. FIG. 3 is a block diagram showing a configuration of a semiconductor integrated circuit device according to a second embodiment.

  Hereinafter, embodiments, examples, and modifications will be described with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals and repeated description may be omitted.

First, a technique (hereinafter referred to as a comparative example) studied by the present inventor prior to the present disclosure will be described.
FIG. 1 is a block diagram showing a part of an electric motor system according to a comparative example. FIG. 2 is a diagram for explaining the sense current of the IGBT. The electric motor system 1R includes a three-phase motor 10, an inverter circuit 20, a driver IC 30R, and a control circuit 40R. The three-phase motor 10 includes three current transformers (coils) 11. If two phase currents can be detected, the current for each phase can be calculated, so two current transformers may be used. The inverter circuit 20 is configured as a three-phase bridge by six power semiconductor devices 21. As shown in FIG. 2, the power semiconductor device 21 includes an IGBT 22 that is a switching transistor, and the IGBT 22 includes a gate terminal G, a collector terminal C, an emitter terminal E that supplies a drive current, and a current detection terminal SE that flows a sense current. . The driver IC 30R drives the power semiconductor 21 and the control circuit 40R controls the driver IC 30R.

In the inverter circuit using the IGBT 22, in order to drive the motor, it is necessary to control the drive signal (PWM signal) for driving the IGBT 22 while monitoring the driving current. The current monitoring is performed in the following two ways.
(1) The motor drive current of each phase is monitored using the current transformer 11, the A / D converter of the control circuit 40R, etc., and is used for motor drive control for normal current detection.
(2) The sense current is monitored by using a voltage comparison circuit, an A / D converter or the like in the driver IC 30R, and is used for cutting off the driver signal at the time of overcurrent for overcurrent detection.

  Since the drive current (Id) of the IGBT 22 is an emitter current (Ie) and the sense current is a current of a current mirror circuit in the IGBT 22, it is also referred to as a current mirror current (Iγ). A ratio (Ie / Iγ) between the emitter current (Ie) and the current mirror current (Iγ) is referred to as a current mirror ratio (γ). A current mirror ratio of about 1000 to 10000 is selected. If the normal drive current (Id) of the motor is about 400 A, the rated current is about 1600 A.

The overcurrent can be detected by converting the current mirror current (Iγ) into a voltage (Vs) by a current detection resistor (resistance value (Rs)) and comparing it with a reference voltage (VREF) by a comparator (CMP). . When the accuracy of the resistance value (Rs) of the current detection resistor is within ± 1%, the detection voltage (Vs) is expressed by the following equation (1).
Vs = Iγ × Rs
= Ie × (1 / γ) × Rs
= Id × (1 / γ) × Rs (1)
Therefore, when a sense current is used to determine an abnormality exceeding the rated current value, if the current mirror ratio (γ) is 4000 and the resistance value (Rs) of the current detection resistor is 5Ω, the detection voltage (Vs) in overcurrent detection Is as follows.
Vs = 1600A × (1/4000) × 5Ω = 2V
Therefore, if the reference voltage (VREF) is set to 2 V, the comparator (CPM) detects an overcurrent when the rated current value flows in the drive current of the motor.

Next, the variation in the current mirror ratio will be described below.
FIG. 3 is a diagram showing the relationship between the IGBT current mirror ratio and the collector-emitter saturation voltage. The conditions are ambient temperature (Tc) = 25 ° C., gate-emitter voltage (VGE) = 15 V, detection resistance (Rs) = 2.9Ω, collector current (IC) = 500 A. The current mirror ratio (γ) varies 4000 ± 75% within the variation range (A = 1.15 to 1.75 V) of the collector-emitter saturation voltage (VCE (sat)). Assuming all conditions (Tc = −40 to 175 ° C., VGE = 14 to 18V, Rs = 2.9Ω, IC = 500A), the current mirror ratio (γ) is a very large value of 4000-75% / 140%. And does not fit in 4000 ± 10%.

  FIG. 4 is a diagram showing the relationship between the current mirror ratio of the IGBT and the current detection resistor. The conditions are Tc = 25 ° C., VGE = 15 V, and IC = 500 A. The current mirror ratio (γ) varies ± 75% when Rs = 2.9Ω, −40% / 45% when Rs = 0.5Ω, and ± 80% when Rs = 20Ω, but the smaller Rs, the more accurate It tends to rise.

  FIG. 5 is a diagram showing the relationship between the IGBT current mirror ratio and the gate-emitter saturation voltage. The conditions are Tc = 25 ° C., Rs = 2.9Ω, and IC = 500A. The current mirror ratio (γ) varies ± 75% when VG = 15V, −75% / 75% when VG = 14V, and −20% / 50% when VG = 18V, but the accuracy increases as VGE increases. There is a tendency.

  FIG. 6 is a diagram showing the relationship between the IGBT current mirror ratio and the ambient temperature. The conditions are Rs = 2.9Ω, VGE = 15V, and IC = 500A. The current mirror ratio (γ) varies ± 75% at Tc = 25 ° C., −75% / 110% at TC = −40 ° C., and −75% / 5% at Tc = 175 ° C. Considering the total temperature (−40 to 175 ° C.), the accuracy of −75% / 110% (25 ° C. standard) is estimated.

  FIG. 7 is a diagram showing the relationship between the current mirror ratio of the IGBT and the collector current. The conditions are Rs = 2.9Ω, VGE = 15V, Tc = 25 ° C. The current mirror ratio (γ) varies ± 75% when IC = 500A, −50% / 0% when IC = 100A, and −90% / 100% when IC = 600A. However, the smaller the IC, the higher the accuracy. There is a tendency.

As described above, the variation in the current mirror ratio is large due to the characteristics of the IGBT. For example, the temperature characteristic of the detection voltage (Vs) is as follows.
Vs = 1600A × (1/4000) × 5Ω = 2V... Normal temperature Vs = 1600A × (1/3000) × 5Ω = 2.67V high temperature (150 ° C.)
Vs = 1600A × (1/5000) × 5Ω = 1.6V... At low temperature (−45 ° C.)
If the reference voltage (VREF) of the comparator (CMP) is the same as at normal temperature, overcurrent can be detected with a small current at high temperatures, and overcurrent cannot be detected even at higher temperatures than the rated current. Detection accuracy drops. As a result, the detection current detection time varies at the time of overcurrent detection, the subsequent protective measures are delayed, and in the worst case, the element is destroyed. Therefore, in an actual inverter design environment, it is necessary to individually adjust the resistance value of the current detection resistor on the board on which the IGBT is mounted, or to select a device with low variation.

<Embodiment>
FIG. 27 is a block diagram illustrating a configuration of the electronic device according to the embodiment.
The electronic device according to the embodiment includes a power semiconductor device (PS), a first semiconductor integrated circuit device (IC1) that drives the power semiconductor device (PS), and a first semiconductor integrated circuit device (IC1). A second semiconductor integrated circuit device (IC2) to be controlled. The power semiconductor device (PS) includes a terminal (ST) that outputs a sense current (Iγ). The first semiconductor integrated circuit device (IC1) includes an overcurrent detection circuit (OCDC) that detects an overcurrent based on a sense current (Iγ), and a temperature detection circuit that detects the temperature of the power semiconductor device (OS). TDC). The second semiconductor integrated circuit device (IC2) calculates the temperature based on the output of the memory device (MEM) that stores the temperature characteristics of the current mirror ratio of the power semiconductor device (PS) and the temperature detection circuit (TDC). The overcurrent detection circuit (OCDC) is controlled based on the temperature detection unit (TDU) to be performed, the temperature detected by the temperature detection unit (TDU), and the temperature characteristics of the current mirror ratio stored in the storage device (MEM). An overcurrent detection control unit (OCDCU).

  For example, the overcurrent detection circuit (OCDC) converts the current mirror current (Iγ) into the voltage (Vs) by the current detection resistor (resistance value (Rs)), and the comparator (CMP) and the reference voltage (VREF) and the voltage (Vs) is detected to detect an overcurrent, and the reference voltage (VREF) can be changed based on the temperature characteristic data of the current mirror ratio (γ) of the power semiconductor device. In the first embodiment, the power semiconductor device itself holds temperature characteristic data of the current mirror ratio (γ) of the power semiconductor device or information for obtaining the temperature characteristic data. In the second embodiment, the temperature characteristic data of the current mirror ratio (γ) of the power semiconductor device is measured, and the current mirror ratio (γ) is different from the semiconductor integrated circuit device that detects the overcurrent. The temperature characteristic data of is held.

A first embodiment of a first semiconductor integrated circuit device (IC1) of an electronic device according to an embodiment will be described. FIG. 28 is a block diagram for explaining the semiconductor integrated circuit device according to the first embodiment.
The semiconductor integrated circuit device (IC1) according to the first embodiment includes a first terminal (T1) for inputting a signal (S1) from another semiconductor integrated circuit device (IC2), and a power semiconductor device (PS). A second terminal (T2) for connection to the gate terminal (GT) of the first power supply, and a third terminal (for connection to the sense current terminal (ST) and the current detection resistor (RD) for the power semiconductor device (PS)). T3). The semiconductor integrated circuit device (IC1) includes a comparator (CMP) connected to the third terminal, a reference voltage generation circuit (VRG) connected to the comparator (CMP), a signal (S1), and a comparator (CMP). And a drive circuit (DRIVER) that outputs a drive signal (DRV) based on the output signal (OCD) of the output to the second terminal (T2). Further, the semiconductor integrated circuit device (IC1) has a fourth terminal (T4) for inputting temperature information (TEMP) of the power semiconductor device (PS) and the temperature of the current mirror ratio of the power semiconductor device (PS). A fifth terminal (T5) for inputting characteristic information (CHAR) from the power semiconductor device (PS) and a conversion circuit for converting the temperature information (TEMP) into the first data (D1). Further, the semiconductor integrated circuit device (IC1) converts the information (CHAR) related to the temperature characteristic of the current mirror ratio into the second data (D2), and converts the information into the first data (D1) and the second data (D2). And a sixth terminal (T6) for inputting information (VREFC) for controlling the voltage of the reference voltage generation circuit (VRG) based thereon.

A second embodiment of the first semiconductor integrated circuit device (IC1) of the electronic device according to the embodiment will be described. FIG. 29 is a block diagram for explaining a semiconductor integrated circuit device according to the second embodiment.
The semiconductor integrated circuit device (IC1) according to the second embodiment includes a first terminal (T1) for inputting a signal (S1) from another semiconductor integrated circuit device (IC2), and a power semiconductor device (PS). A second terminal (T2) for connection to the gate terminal (GT) of the first power supply, and a third terminal (for connection to the sense current terminal (ST) and the current detection resistor (RD) for the power semiconductor device (PS)). T3). The semiconductor integrated circuit device (IC1) includes a comparator (CMP) connected to the third terminal, a reference voltage generation circuit (VRG) connected to the comparator (CMP), a signal (S1), and a comparator (CMP). And a drive circuit (DRIVER) that outputs a drive signal (DRV) based on the output (OCD) of the output to the second terminal (T2). Further, the semiconductor integrated circuit device (IC1) has the fourth terminal (T4) for inputting the temperature information (TEMP) of the power semiconductor device (PS) and the temperature information (TEMP) as the first data (D1). A conversion circuit for converting, and a conversion circuit for converting the voltage (Vs) of the third terminal (T3) into the second data (D2). Further, the voltage of the reference voltage generation circuit (VRG) based on the data of the current transformer that detects the drive current that is the output of the first data (D1), the second data (D2), and the power semiconductor device (PS). And a sixth terminal (T6) for inputting information to be controlled (VREFC).

  According to the embodiment, since the overcurrent detection circuit can be controlled based on the temperature characteristic of the current mirror ratio, it is possible to accurately detect the overcurrent even if the current mirror ratio varies with respect to the temperature. It becomes. According to the first embodiment, the information about the temperature characteristics of the current mirror ratio can be acquired from the power semiconductor device, and the reference voltage is changed based on the information about the temperature characteristics of the current mirror ratio and the temperature information of the power semiconductor device. It becomes possible to do. According to the second embodiment, the temperature characteristic of the current mirror ratio can be measured, and the reference voltage can be changed based on the temperature characteristic of the current mirror ratio and the temperature information of the power semiconductor device. As a result, even if the current mirror ratio varies with respect to the temperature, it is possible to accurately detect overcurrent.

  If the overcurrent can be detected with high accuracy, it is possible to shift to the protective operation of the power device (power semiconductor device) with high accuracy and high speed in an abnormal current generation mode such as a load short circuit state. As a result, it is possible to optimize the breakdown tolerance design of the power device and improve the electrical characteristics of the power device.

  In the first example (Example 1) of the first embodiment, the power semiconductor device itself holds information for acquiring temperature characteristic data of the current mirror ratio (γ) of the power semiconductor device.

(Electric motor system)
FIG. 8 is a block diagram illustrating a configuration of the electric motor system according to the first embodiment. The electric motor system 1 includes an inverter circuit 20 using six three-phase motors 10 and six power semiconductor devices, six driver ICs 30, a control circuit 40, and a DC power supply 50. The inverter circuit 20 is also called a power module. A portion constituted by the inverter circuit 20, the six driver ICs 30 and the control circuit 40 is referred to as an electronic device 2. The inverter circuit 20 performs on / off control of the switching transistor 22 in the inverter circuit 20 so that current flows from the voltage of the direct-current power supply (DC) 50 to each phase of the three-phase motor 10 when the vehicle is driven. The speed of the vehicle or the like is changed depending on the switching frequency. Further, at the time of braking of a vehicle or the like, the switching transistor 22 is ON / OFF controlled in synchronization with the voltage generated in each phase of the three-phase motor 10, so-called rectifying operation is performed, and conversion is performed to DC voltage to perform regeneration.

  In the three-phase motor 10, the rotor is a permanent magnet and the armature is a coil, and three-phase (U-phase, V-phase, W-phase) armature windings are arranged at intervals of 120 degrees. The coils are delta-connected, and current always flows through the three coils of the U phase, V phase, and W phase. The three-phase motor 10 includes a current detector 11 such as a current transformer and an angular velocity and position detector 12.

  The inverter circuit 20 forms a U-phase, V-phase, and W-phase bridge circuit with the power semiconductor device. In the U-phase bridge circuit, the connection point between the power semiconductor device 21 </ b> U and the power semiconductor device 21 </ b> X is connected to the three-phase motor 10. In the V-phase bridge circuit, the connection point between the power semiconductor device 21V and the power semiconductor device 21Y is connected to the three-phase motor 10. In the W-phase bridge circuit, the connection point between the power semiconductor device 21 </ b> W and the power semiconductor device 21 </ b> Z is connected to the three-phase motor 10. Here, since the power semiconductor devices 21U, 21V, 21W, 21X, 21Y, and 21Z have the same configuration, they may be collectively referred to as the power semiconductor device 21. The power semiconductor device 21 includes a semiconductor chip including a switching transistor (hereinafter referred to as IGBT) 22 formed of an IGBT and a temperature detection diode D1, and a free wheel diode (FWD) connected in parallel between the emitter and collector of the IGBT 22. ) And a semiconductor chip provided with D2. The free-wheeling diode D2 is connected so that a current flows in a direction opposite to the current flowing through the IGBT 22. The semiconductor chip on which the IGBT 22 and the temperature detecting diode D1 are formed and the semiconductor chip on which the freewheeling diode D2 are formed are preferably sealed in the same package. The free-wheeling diode D2 may be formed on the same chip as the semiconductor chip on which the IGBT 22 and the temperature detecting diode D1 are formed.

  A driver IC 30 as a first semiconductor integrated circuit device includes a drive circuit (DRIVER) 31, an overcurrent detection circuit (OVER CURRENT) 32, a temperature detection circuit (TEMP. DETECT) 33, and an ID for generating a signal for driving the gate of the IGBT 22. A read circuit (ID READ CIRCUIT) 34 is provided on one semiconductor substrate. The control circuit 40 as the second semiconductor integrated circuit device includes a CPU 41, a PWM circuit (PWM) 42, and an I / O interface (I / O IF) 43 on one semiconductor substrate.

(Electronic device)
FIG. 9 is a block diagram showing an electronic device which is a part of the electric motor system of FIG. The power semiconductor device 21 includes an IGBT 22 as a switching transistor, a temperature detection diode D1, and an ID circuit (ID CIRCUIT) 24 for storing a chip-specific ID code on one semiconductor substrate. The power semiconductor device 21 includes a gate terminal G, a collector terminal C, an emitter terminal E through which a drive current flows, and a current detection terminal SE through which a sense current flows. The ID circuit 24 includes a ladder resistor and an electric fuse. In the wafer test at the time of manufacturing the wear of the power semiconductor device 21, a normal temperature and high temperature test is performed, and the characteristic data (temperature characteristics of the current mirror ratio (γ)) of the power semiconductor device 21 obtained at that time is an ID code. At the same time, it is stored in the storage device 56 as a wafer measurement data library. Note that the ID code is set by cutting the electric fuse of the ID circuit 24 of the power semiconductor device 21 during the wafer test.

  The driver IC 30 includes a drive circuit 31, a current detection circuit 32, a temperature detection circuit 33, an ID reading / reading circuit 34, an isolator 35, and a CPU interface (CPU_IF) circuit 36. The drive circuit 31 generates a drive signal (DRV) for driving the gate electrode to turn on and off the IGBT 22 based on a PWM (Pulse Width Modulation) signal input from the control circuit 40 via the terminal T1, and supplies the drive signal (DRV) to the terminal T2. Output. A resistor 51 is provided between the terminal T2 of the drive circuit 31 and the gate terminal G of the IGBT 22. Based on an overcurrent detection signal (OCD), which will be described later, the drive circuit 31 sets the drive signal (DRV) to Low, outputs a cut-off signal (COS), and turns on the cut-off transistor 53. The potential between the gate terminal G of the IGBT 22 is set to Low. A resistor 52 is provided between the blocking transistor 53 and the gate terminal G of the IGBT 22.

  The current detection circuit 32 includes a comparator 321 and a reference voltage generation circuit 322. The overcurrent detection circuit 321 converts the sense current into a detection voltage (Vs) by the current detection resistor 54 connected to the terminal T3, and the comparator 321 uses the detection voltage (Vs) and the reference voltage (VREF) of the reference voltage generation circuit 322. In comparison, the overcurrent is detected. When the detection voltage (Vs) is larger than the reference voltage (VREF), the overcurrent detection circuit 321 sends an overcurrent detection signal (OCD) to the drive circuit 31 to cut off the drive signal of the IGBT 22, and the isolator 35 and the terminal T11. And sent to the CPU 41 via the I / O interface 43 of the control circuit 40. An A / D conversion circuit 331 described later converts the detection voltage (Vs) and sends it to the CPU 41 via the terminal T8, the isolator 35, the CPU interface 36, the terminal T10, and the I / O interface 44 of the control circuit 40. The reference voltage (VREF) of the reference voltage generation circuit 322 can be changed by a signal input from the terminal T6.

  The temperature detection circuit 33 includes an A / D conversion circuit 331 that is a detection circuit for the forward voltage (VF) of the temperature detection diode D1, and a current bias circuit (BIAS) 332 that supplies a bias current to the temperature detection diode D1. Prepare. The chip temperature of the power semiconductor device 21 is measured using the forward voltage of the temperature detection diode D1. The temperature detection circuit 33 passes a constant current (IF) from the current bias circuit 332 to the temperature detection diode D1 via the terminal T12 and the terminal (anode terminal of the temperature detection diode) TD, and applies the detection voltage (VF) to the A / D. The data is converted by the conversion circuit 331 and sent to the CPU 41 via the terminal T8, the isolator 35, the CPU interface 36, the terminal T10, and the I / O interface 44 of the control circuit 40.

  The ID reading circuit 34 reads the ID code of the ID circuit 24 via the terminal T5 and sends it to the COU 41 via the terminal T9, the isolator 35, the CPU interface 36, the terminal T10, and the I / O interface 44 of the control circuit 40. The ID reading circuit 34 is composed of an A / D conversion circuit or the like.

  The isolator 35 transmits a signal transmitted between the driver IC 30 and the control circuit 40 by magnetic coupling. The isolator 35 is configured by insulating an on-chip transformer formed of wiring with an interlayer film.

  The CPU interface 36 is an interface for connecting the circuit of the driver IC 30 and the CPU 41 of the control circuit 40 with an SPI (Serial Peripheral Interface) or the like.

  The control circuit 40 includes a CPU 41, a PWM circuit (PWM) 42, a storage device (MEMORY) 47, an I / O interface (I / O_IF) 44 and an A / D converter (ADC) 45, which are interface input / output units for external devices. And a PC interface (PC_IF) 46, which is an interface unit between the PC and an external PC (Personal Computer), is provided on one semiconductor substrate, and is configured by, for example, a microcomputer unit (MCU). The storage device 47 is preferably composed of an electrically rewritable nonvolatile memory such as a flash memory. The program executed by the CPU 41 is preferably stored in an electrically rewritable non-volatile memory such as a flash memory, and may be stored in the storage device 47.

Note that the program executed by the CPU 41 may be stored in the nonvolatile memory of the control circuit 40 in any of the following ways.
(1) During wafer manufacture of the control circuit 40 which is the second semiconductor integrated circuit device.
(2) After being enclosed in the package of the control circuit 40 and before being mounted on the printed circuit board of the electronic device 2.
(3) After mounting on the printed circuit board of the electronic apparatus 2 (stored from the PC 57 via the PC interface 46).

  FIG. 10 is a block diagram showing functions of the control circuit of FIG. The control circuit 40 includes an outside air temperature detection unit 411, an overcurrent detection control unit 414, a temperature detection unit 416, and a current detection unit 417. In addition, the control circuit 40 includes a PWM control unit that generates a drive signal for ON / OFF control of the switching transistor of the power semiconductor device according to the motor torque and the rotational speed (not shown). A block indicated by a broken line is a software process (a process in which the CPU 41 executes a program), but is not limited thereto, and may be configured by, for example, a hard wafer.

  The outside air temperature detection unit 411 includes an averaging processing unit 412 and a selection unit 413. A signal obtained by converting the output of the outside temperature detector 55, which is a temperature sensor such as a thermistor, by the A / D converter 45, sampling the input signal by the averaging processing unit 413, and averaging a plurality of signals, or from the PC 57 The selection unit 413 selects a temperature setting value of the environmental temperature input via the PC interface 46. As will be described later, the PC 57 sets the temperature of the space in which the environmental temperature of the electronic device 2 such as a thermostatic chamber can be set, or the PC 57 acquires the temperature setting value, so that the PC 57 sets the setting value of the environmental temperature. Can be entered. Since the ambient temperature may be detected by either the outside air temperature detector 55 or the PC 57, either one may be omitted. In this case, the selection unit 413 of the outside air temperature detection unit 411 may not be provided, and when the environmental temperature is detected by the PC 57, the averaging processing unit 412 may not be provided.

  The temperature information as the output of the selection unit 413 and the voltage information of the temperature detection diode obtained by converting the output of the A / D conversion circuit 331 by the temperature detection unit 416 are input to the overcurrent detection control unit 414. The ID recognition unit 415 recognizes the ID code based on the signal from the ID reading circuit, acquires element characteristics corresponding to the ID code from the external storage device (STORAGE) 56 in which the wafer measurement data library of the PC 57 is stored. Store in the storage device 47. The element characteristics corresponding to the ID code acquired by the ID recognition unit 415 are stored in the storage device 47. The current detection unit 417 converts the output corresponding to the drive current (Id) converted from the output of the current transformer 11 by the A / D converter 45 and the detected voltage (Vs) into the current mirror current ( Input a value corresponding to Iγ).

(Electronic device manufacturing method)
A method for acquiring temperature characteristic data of the current mirror ratio (γ), which is one step of the manufacturing method of the electronic device 2, will be described with reference to FIGS.
FIG. 11 is a diagram for explaining the method of manufacturing the electronic device according to the first embodiment. FIG. 12 is a flowchart of an initial setting process at the time of manufacturing the electronic device according to the first embodiment.
As shown in FIG. 11, the process of storing the temperature characteristic data of the current mirror ratio (γ) in the electronic device is performed in a test process or the like in the manufacturing process of the electronic device. The electronic device 2 including the power semiconductor device 21, the driver IC 30, and the control circuit 40 is prepared (step S10). The electronic device 2 is carried into a space where the ambient temperature can be set, such as a thermostatic bath, and the outside air temperature detector 55 and the PC 57 are connected. A temperature characteristic of the current mirror ratio (γ) is acquired by a method described later (step S20). The outside air temperature detector 55 and the PC 57 are removed from the electronic device 2 and carried out from a space where the environmental temperature can be set.

  As shown in FIG. 12, first, the ID recognition unit 415 reads the ID code of the power semiconductor device 21 (step S21). Next, the ID recognizing unit 415 acquires the temperature characteristic data of the current mirror ratio (γ) from the external storage device 56 in which the wafer measurement data library is stored by the ID code, and stores it in the storage device 47 (step S22). The overcurrent detection control unit 414 extracts the current mirror ratio (γ) at normal temperature from the storage device 47 (step S23). The overcurrent detection control unit 414 sets the voltage value obtained from the calculation result of the equation (1) in the reference voltage generation circuit 322 (step S25).

  The initial setting process described above is applied to all (six) driver ICs corresponding to all (six) power semiconductor devices constituting the electronic device 2.

(Operation during normal operation)
Next, the operation of the electronic apparatus (motor system) during normal operation (motor operation) will be described with reference to FIGS. 13 and 14. The outside temperature detector 55 and the PC 57 are necessary when acquiring the temperature characteristic data of the current mirror ratio (γ), but are not necessary during normal operation.
FIG. 13 is a flowchart of the reference voltage changing process during the normal operation of the control circuit according to the first embodiment. FIG. 14 is a flowchart of the drive current confirmation process during the normal operation of the control circuit according to the first embodiment.
The temperature of the power semiconductor device 21 is measured by the temperature detection diode D1 (step S31). The temperature detection unit 416 converts voltage information obtained by converting the detection voltage (VF) detected by flowing a constant current (IF) from the current bias circuit 332 of the driver IC 30 into the temperature detection diode D1 by the A / D conversion circuit 331, as temperature information. And the temperature of the power semiconductor device is measured. The overcurrent detection control unit 414 extracts the current mirror ratio (γ) corresponding to the temperature measurement result acquired by the temperature conversion unit 416 from the storage device 47 (step S32). The overcurrent detection control unit 414 sets the voltage value obtained from the calculation result of the equation (1) in the reference voltage generation circuit 322 (step S33). The above-described reference voltage changing process is executed at regular intervals (for example, 10 ms-100 ms).

The current detection unit 417 performs current measurement based on the current mirror current (Iγ) from the sense current terminal SE of the power semiconductor device and current measurement based on the drive current (Id) from the current transformer 11 in parallel. (Step S34). It is determined whether the measurement current based on Iγ and the measurement current based on Id are substantially the same (step S35). This determination is performed, for example, when the accumulated difference data within a specific time does not exceed a predetermined value. If NO, the process moves to step S36, and if YES, the process ends. In step S36, an abnormal state process for stopping or suppressing the drive signal is performed. As a result, the power semiconductor device can be protected even when the current mirror current and the drive current are not within a predetermined range and an overcurrent cannot be detected.
According to the first embodiment, the power semiconductor device is ID-coded, the temperature characteristic of the current mirror ratio of the storage device of the control circuit is stored from the wafer measurement data library corresponding to the ID code, and based on the temperature characteristic of the current mirror ratio. Since the overcurrent detection circuit can be controlled, it is possible to accurately detect the overcurrent even if the current mirror ratio varies with respect to the temperature.

<Modification 1>
The temperature of the power semiconductor device can be measured without using an on-chip temperature detection diode. In the first modification example (modification example 1) of the first embodiment, a power module equipped with the power semiconductor device is mounted. Mount the thermistor and measure the temperature.

  FIG. 15 is a block diagram illustrating a configuration of an electronic device according to the first modification. The electronic device 2A according to the first modification is the same as the electronic device according to the first embodiment except for the power semiconductor device. The temperature detecting diode is not built in the power semiconductor device 21A. Accordingly, the thermistor 58 is mounted on the power module on which the power semiconductor device 21 is mounted, and one end of the thermistor 58 is connected to the terminal T4 of the driver IC 30. The power semiconductor device 21A is the same as the power semiconductor device according to the first embodiment except that the temperature detecting diode is not incorporated.

  FIG. 16 is a flowchart of the reference voltage changing process during normal operation of the electronic device according to the first modification. The reference voltage changing process during operation of the electronic device according to the first modification is the same as that of the first embodiment except that a thermistor is used for temperature measurement. In addition, the initial setting process at the time of manufacture and the drive current confirmation process at the time of normal operation in the first modification are the same as those in the first embodiment.

  In Modification 1, since it is not necessary to incorporate a temperature detection diode for each power semiconductor device, temperature detection is possible even when the mounting conditions are limited such as the number of bonding wires per power semiconductor device is limited. Is possible.

<Modification 2>
In some cases, the current mirror ratio (γ) of the power semiconductor device at normal temperature is different from the current mirror ratio (γ) of the design reference value. Therefore, in the second modification example (modification example 2) of the first embodiment, in the initial setting process, the current mirror ratio (γ) is measured and the gate is set to be the same as the current mirror ratio (γ) of the design reference value. Control drive voltage.

  FIG. 17 is a block diagram illustrating a configuration of an electronic device according to the second modification. FIG. 18 is a block diagram showing a configuration of the drive circuit of FIG. The electronic device according to the second modification is the same as the first embodiment except that the driver IC drive circuit and its control are different from those of the first embodiment. The difference from the first embodiment will be mainly described.

  The electronic device 2B includes a power semiconductor device 21, a driver IC 30B, and a control circuit 40B. The driver IC 30B includes a drive circuit 31B, an isolator 35B, and a CPU interface 36B. The drive circuit 31B includes a drive transistor 311 and a drive voltage control circuit (VCNT) 312. The drive voltage control circuit 312 controls the voltage of the boost circuit 37 located outside the drive circuit 31B, thereby driving the drive transistor 311. Change the voltage. When it is desired to increase the current mirror ratio (γ), the output voltage of the boost circuit 37 is increased. Conversely, when it is desired to decrease the current mirror ratio (γ), the voltage of the boost circuit 37 is decreased to adjust the drive voltage. can do. A signal for controlling the drive voltage control circuit 312 is input from the CPU 41 through the I / O interface 44, terminal T10, CPU interface 36B, isolator 35B, and terminal T7. The isolator 35B and CPU interface 36B have the same configuration as the isolator 35 and CPU interface 36 of the first embodiment, although the number of input / output signal lines is different.

  FIG. 19 is a block diagram showing functions of the control circuit of FIG. The control circuit 40B includes an overcurrent detection control unit 414B and a current detection unit 417B that have functions added to the overcurrent detection control unit 414 and the current detection unit 417 of the control circuit 40 of the first embodiment. The overcurrent detection control unit 414B has a function of generating a signal for controlling the drive voltage control circuit 312 of the drive circuit 31B. The current detector 417B has an additional function of calculating the current mirror ratio (γ) from the measured drive current (Id) and current mirror current (Iγ).

FIG. 20 is a flowchart of an initial setting process at the time of manufacturing the electronic device according to the second modification.
First, the ID recognition unit 415 reads the ID code of the power semiconductor device 21 (step S21). Next, the ID recognizing unit 415 acquires the temperature characteristic data of the current mirror ratio (γ) from the external storage device 56 in which the wafer measurement data library is stored by the ID code, and stores it in the storage device 47 (step S22). The overcurrent detection control unit 414B extracts the current mirror ratio (γ) at normal temperature from the storage device 47 (step S23). When the overcurrent detection control unit 414B compares the extracted current mirror ratio (γ) with the current mirror ratio (γ) of the design reference value and differs, the current mirror ratio (γ) measured by the current detection unit 417B is designed. The drive voltage control bypass 312 is adjusted so that the current mirror ratio (γ) of the reference value becomes the same value (step S24). The overcurrent detection control unit 414B determines the voltage value obtained from the calculation result of the equation (1). The reference voltage generation circuit 322 is set (step S25). Note that the reference voltage changing process and the drive current confirmation process during normal operation in the second modification are the same as those in the first embodiment.

  According to the second modification, since the current mirror ratio can be set near the design reference value, it is possible to detect an overcurrent with higher accuracy than in the first embodiment.

  The thermistor 58 may be used in the same manner as in the first modification instead of the temperature detection diode D1 in the second modification.

<Modification 3>
In the first embodiment, the first modification, and the second modification, the power semiconductor device stores an ID code, and the element characteristics of the power semiconductor device are stored in the external storage device 56 as a wafer measurement data library. In the third modification example (modification example 3) of the first embodiment, the element characteristics of the power semiconductor device are stored in the power semiconductor device itself.

  FIG. 21 is a block diagram illustrating a configuration of an electronic device according to the third modification. The electronic device according to the third modification is the same as the first embodiment except for the ID circuit of the power semiconductor device, the ID reading circuit of the driver IC, and the control thereof. The difference from the first embodiment will be mainly described. The electronic device 2C includes a power semiconductor device 21C, a driver IC 30C, and a control circuit 40C. The power semiconductor device 21C includes an ID circuit 24C that stores element characteristics of the power semiconductor device. In the wafer test at the time of manufacturing the wear of the power semiconductor device 21C, room temperature and high temperature tests are performed, and the characteristic data (temperature characteristics of the current mirror ratio (γ)) of the power semiconductor device 21C obtained at that time are used as an ID circuit. Store in 24C. In the wafer test, the characteristic data is set by cutting the electric fuse of the ID circuit 24C of the power semiconductor device 21C. The driver IC 30C includes an ID reading circuit 34C that reads the contents of the ID circuit 24C. The ID reading circuit 34C is composed of an A / D conversion circuit and the like, similar to the ID reading circuit 34 of the first embodiment.

  FIG. 22 is a block diagram showing functions of the control circuit of FIG. The control circuit 40C does not have the PC interface 46, the outside temperature detection unit 411C does not have the selection unit 413, and the ID that reads the temperature characteristic data of the current mirror ratio (γ) instead of the ID recognition unit 415 that reads the ID code. Except for the recognition unit 415C, it is the same as the control circuit 40 of the first embodiment.

FIG. 23 is a flowchart of an initial setting process at the time of manufacturing an electronic device according to Modification 3.
First, the ID recognition unit 415C reads the ID code of the power semiconductor device 21 (step S21C). Here, the ID code includes the temperature characteristic of the current mirror ratio (γ). Next, the ID recognizing unit 415 acquires temperature characteristic data of the current mirror ratio (γ) included in the ID code and stores it in the storage device 47 (step S22). The overcurrent detection control unit 414 extracts the current mirror ratio (γ) at normal temperature from the storage device 47 (step S23). The overcurrent detection control unit 414 sets the voltage value obtained from the calculation result of the equation (1) in the reference voltage generation circuit 322 (step S25). The reference voltage changing process and the drive current confirmation process during normal operation in the second embodiment are the same as those in the first embodiment.

  According to the third modification, it is not necessary to prepare a wafer measurement data library separately and there is no connection to an external PC, so that it is possible to simplify the labor of the initial setting process compared to the first embodiment.

  The thermistor 58 may be used in the same manner as in the first modification instead of the temperature detection diode in the third modification. Further, the drive voltage control circuit 312 may be provided in the drive circuit of the modification 3 similarly to the modification 2, and the control may be performed by the overcurrent detection control unit of the control circuit.

  A second example (Example 2) of the second embodiment is a semiconductor different from the semiconductor integrated circuit device that detects the overcurrent by measuring the temperature characteristic data of the current mirror ratio (γ) of the power semiconductor device. The integrated circuit device holds temperature characteristic data of the current mirror ratio (γ).

  FIG. 24 is a block diagram illustrating the configuration of the electronic apparatus according to the second embodiment. The electronic device 2D according to the second embodiment is different from the first embodiment in that the power semiconductor device does not have an ID circuit, the driver IC does not have an ID read circuit, and the control circuit does not have an ID recognition unit. It is the same. The electronic device 2D is used in the electric motor system 1 in place of the electronic device 2. The difference from the first embodiment will be mainly described.

  FIG. 25 is a block diagram showing functions of the control circuit of FIG. The control circuit 40D does not include the ID recognition unit 415, and the overcurrent detection control unit 414D and the current detection unit whose functions are changed from those of the overcurrent detection control unit 414 and the current detection unit 417 of the control circuit 40 of the first embodiment. 417D is provided. The overcurrent detection control unit 414D has a function of storing the current mirror ratio (γ) calculated by the current detection unit in the storage device 47. The current detection unit 417D has a function of calculating a current mirror ratio (γ) from the measured drive current (Id) and current mirror current (Iγ). Since the ambient temperature may be detected by either the outside air temperature detector 55 or the PC 57, either one may be omitted. In this case, the selection unit 413 of the outside air temperature detection unit 411 may not be provided, and when the environmental temperature is detected by the PC 57, the averaging processing unit 412 may not be provided.

FIG. 26 is a flowchart of an initial setting process at the time of manufacturing the electronic device according to the second embodiment.
First, the environmental temperature is set to room temperature (A ° C.) (step S41). The current detection unit 417D measures the drive current (Id) and the sense current (Iγ), calculates the current mirror ratio (γ), and the overcurrent detection control unit 414D stores the calculated current mirror ratio (γ) in the storage device. (Step S42). The environmental temperature is set to a high temperature (H ° C.) (step S43). The current detection unit 417D measures the drive current (Id) and the sense current (Iγ), calculates the current mirror ratio (γ), and the overcurrent detection control unit 414D stores the calculated current mirror ratio (γ) in the storage device. (Step S44). The environmental temperature is set to a high temperature (L ° C.) (step S45). The current detection unit 417D measures the drive current (Id) and the sense current (Iγ), calculates the current mirror ratio (γ), and the overcurrent detection control unit 414D stores the calculated current mirror ratio (γ) in the storage device. (Step S46). Next, the overcurrent detection control unit 414D extracts the current mirror ratio (γ) at normal temperature from the storage device 47 (step S23). The overcurrent detection control unit 414D sets the voltage value obtained from the calculation result of the equation (1) in the reference voltage generation circuit 322 (step S25). The reference voltage changing process and the drive current confirmation process during normal operation in the second embodiment are the same as those in the first embodiment.

  In the second embodiment, since it is not necessary to incorporate an ID circuit for each power semiconductor device, the current mirror ratio can be reduced even when the mounting conditions are limited such as the number of bonding wires per power semiconductor device. The temperature characteristics can be acquired.

  Instead of the temperature detection diode of the second embodiment, the thermistor 58 may be used as in the first modification. Further, the drive voltage control circuit 312 may be provided in the drive circuit of the second embodiment as in the second modification, and the control may be performed by the overcurrent detection control unit of the control circuit.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments, examples, and modifications. However, the present invention is not limited to the above-described embodiments, examples, and modifications, and various modifications can be made. It goes without saying that it is possible.

Embodiments are appended below.
(Appendix 1)
The manufacturing method of the electronic device is as follows:
(A) a power semiconductor device including a switching element, a terminal for outputting a drive current, and a terminal for outputting a sense current; a first semiconductor integrated circuit device having a gate circuit for driving the switching element; and the gate circuit A second semiconductor integrated circuit device having a non-volatile memory that is electrically rewritable with a control unit that controls, and a step of preparing,
(B) obtaining a temperature characteristic of a current mirror ratio of the power semiconductor device;
including.
(Appendix 2)
In the method for manufacturing an electronic device according to attachment 1,
The step (b)
(B1) detecting the temperature of the first temperature environment and storing it in a non-volatile memory;
(B2) detecting the current mirror ratio in the first temperature environment and storing it in the nonvolatile memory;
(B3) detecting the temperature of the second temperature environment;
(B4) detecting the current mirror ratio in the second temperature environment;
(B5) acquiring a temperature characteristic based on the temperature and the current mirror ratio obtained in the steps (b1) to (b4), and storing the temperature characteristic in the nonvolatile memory;
including.
(Appendix 3)
In the method for manufacturing an electronic device according to (Appendix 1),
The step (b)
(B1) recognizing identification information of the power semiconductor device from the power semiconductor device;
(B2) obtaining a temperature characteristic of a current mirror ratio corresponding to the identification information from an external database and storing it in the nonvolatile memory;
including.
(Appendix 4)
In the method for manufacturing an electronic device according to (Appendix 3),
The temperature characteristic data of the current mirror ratio is obtained by a wafer test at the time of manufacturing the power semiconductor device.
(Appendix 5)
In the method for manufacturing an electronic device according to (Appendix 1),
The step (b)
(B1) obtaining a temperature characteristic of a current mirror ratio from the power semiconductor device;
(B2) storing the acquired temperature characteristics of the current mirror ratio in the nonvolatile memory;
including.

DESCRIPTION OF SYMBOLS 1 ... Electric motor system 10 ... Three-phase motor 11 ... Current transformer 20 ... Inverter circuit 21 ... Power semiconductor device 22 ... IGBT
30 ... Driver IC
31 ... Drive circuit 311 ... Drive transistor 312 ... Drive voltage control circuit 32 ... Overcurrent detection circuit 321 ... Comparator 322 ... Reference voltage generation circuit 33 ... Temperature detection circuit 331 ..A / D conversion circuit 332 ... current bias circuit 34 ... ID readout circuit 35 ... isolator 36 ... CPU interface circuit 40 ... control circuit 41 ... CPU
42 ... PWM circuit 43 ... I / O interface 44 ... I / O interface 45 ... A / D conversion circuit 46 ... PC interface 47 ... storage device

Claims (20)

Electronic devices
A power semiconductor device; and
A first semiconductor integrated circuit device for driving the power semiconductor device;
A second semiconductor integrated circuit device for controlling the first semiconductor integrated circuit device;
With
The power semiconductor device includes:
A terminal for outputting a drive current;
A terminal for outputting a sense current;
With
The first semiconductor integrated circuit device includes:
A drive circuit for driving the power semiconductor device;
An overcurrent detection circuit for detecting an overcurrent based on the sense current;
A temperature detection circuit for detecting the temperature of the power semiconductor device;
With
The second semiconductor integrated circuit device includes:
A storage device for storing a temperature characteristic of a current mirror ratio of the power semiconductor device;
A temperature detection unit that calculates a temperature based on an output of the temperature detection circuit;
An overcurrent detection control unit for controlling the overcurrent detection circuit based on a temperature detected by the temperature detection unit and a temperature characteristic of a current mirror ratio stored in the storage device;
Is provided. The electronic device of claim 1.
The power semiconductor device includes an ID circuit having an ID code of the power semiconductor device,
The first semiconductor integrated circuit device includes an ID reading circuit that reads the ID code from the ID circuit,
The second semiconductor integrated circuit device includes an ID recognition unit that recognizes the ID code from the ID reading circuit,
The temperature characteristic obtained by the wafer test at the time of manufacturing the power semiconductor device based on the ID code is stored in the storage device. The electronic device of claim 2.
The second semiconductor integrated circuit device includes a PC interface for storing the temperature characteristic of the current mirror ratio stored in the external storage device in the storage device. The electronic device of claim 2.
The ID code includes a temperature characteristic of the current mirror ratio. The electronic device of claim 1.
The first semiconductor integrated circuit device includes a circuit for detecting a sense current;
The second semiconductor integrated circuit device includes a current detection unit that acquires a drive current and the sense current of the power semiconductor device. The electronic device of claim 5.
The drive circuit includes a drive voltage control circuit that controls a drive voltage;
The overcurrent detection control unit controls the drive voltage control circuit based on the drive current and the sense current detected by the current detection unit. The electronic device of claim 5.
The overcurrent detection control unit calculates a current mirror ratio based on the drive current and the sense current detected by the current detection unit, and stores them in the storage device. The electronic device of claim 1.
The second semiconductor integrated circuit device includes a CPU and a memory for storing a program. The electronic device of claim 8.
The storage device and the memory are flash memories. The electronic device of claim 1.
The driving circuit stops or suppresses driving based on a signal from the overcurrent detection circuit. The semiconductor integrated circuit device
A first terminal for inputting a signal from another semiconductor integrated circuit device;
A second terminal for connection to the gate terminal of the power semiconductor device;
A third terminal for connecting to a sense current terminal and a current detection resistor of the power semiconductor device;
A comparator connected to the third terminal;
A reference voltage generation circuit connected to the comparator;
A drive circuit that outputs a drive signal based on the signal and the output of the comparator to the second terminal;
A fourth terminal for inputting temperature information of the power semiconductor device;
A fifth terminal for inputting information on a temperature characteristic of a current mirror ratio of the power semiconductor device from the power semiconductor device;
A conversion circuit for converting the temperature information into first data;
A conversion circuit for converting the information into second data;
A sixth terminal for inputting information for controlling the voltage of the reference voltage generation circuit based on the first data and the second data;
Is provided. The semiconductor integrated circuit device according to claim 11.
A current bias circuit connected to the fourth terminal;
The fourth terminal is connected to an anode terminal of a temperature detecting diode built in the power semiconductor device. The semiconductor integrated circuit device according to claim 11.
A current bias circuit connected to the fourth terminal;
The fourth terminal is connected to a thermistor mounted on the power semiconductor device. The semiconductor integrated circuit device according to claim 11.
The fifth terminal is connected to a terminal for inputting an ID number built in the power semiconductor device. The semiconductor integrated circuit device according to claim 11.
The fifth terminal is connected to a terminal for inputting temperature characteristic data of a current mirror ratio built in the power semiconductor device. The semiconductor integrated circuit device according to claim 11.
The drive circuit includes a voltage control circuit that controls a drive voltage,
A seventh terminal is provided for inputting information for controlling the voltage control circuit based on the first data and the second data. The semiconductor integrated circuit device according to claim 11.
An eighth terminal for outputting the first data;
A ninth terminal for outputting the second data;
A tenth terminal for connecting to the another semiconductor integrated circuit device;
An interface circuit connected to the sixth, eighth and ninth terminals and the tenth terminal;
Is provided. The semiconductor integrated circuit device according to claim 16.
A tenth terminal for connecting to the another semiconductor integrated circuit device;
An interface circuit connecting the seventh terminal and the tenth terminal;
Is provided. The semiconductor integrated circuit device according to claim 11.
An eleventh terminal for outputting the output of the comparator to the another semiconductor integrated circuit device is provided. The semiconductor integrated circuit device
A first terminal for inputting a signal from another semiconductor integrated circuit device;
A second terminal for connection to the gate terminal of the power semiconductor device;
A third terminal for connecting to a sense current terminal and a current detection resistor of the power semiconductor device;
A comparator connected to the third terminal;
A reference voltage generation circuit connected to the comparator;
A drive circuit for outputting a drive signal based on the signal and the output of the comparator to a second terminal;
A fourth terminal for inputting temperature information of the power semiconductor device;
A conversion circuit for converting the temperature information into first data;
A conversion circuit for converting the voltage of the third terminal into second data;
Sixth for inputting information for controlling the voltage of the reference voltage generation circuit based on the first data, the second data, and data of a current transformer that detects a drive current that is an output of the power semiconductor device. A terminal,
Is provided.

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