JP2017057453A - Thin film formation method and thin film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film formation method capable of forming a thin film on a flexible base material, while suppressing generation of fold or creases during conveyance of the flexible base material; and to provide a thin film deposition system.SOLUTION: There are provided a thin film formation method and a thin film deposition system in one embodiment. In the thin film formation method and the thin film deposition system for depositing a film, while laminating a comparatively thick carrier film on a film base material (flexible base material), the carrier film is recovered and reused in the film deposition system.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming method and a film forming apparatus using a space division type atomic layer deposition method. In particular, the present invention relates to a method and apparatus for forming a thin film roll-to-roll on a thin film substrate.

  As one of methods for forming a thin film, an atomic layer deposition method has been proposed. An atomic layer deposition method, also called an ALD (ALD: Atomic Layer Deposition) method, is a method in which a layer is formed one layer at an atomic level by chemically changing a substance adsorbed on a substrate surface. Gases rich in activity called precursors (also referred to as precursors) and reactive gases are alternately used, and thin films are grown layer by layer at the atomic level by adsorption on the substrate surface and chemical reaction following the adsorption. The reactive gas is sometimes called a precursor in the ALD method.

  The ALD method is characterized by few film formation defects, and is expected to be applied in various fields.

  In this ALD method, a film forming apparatus and a film forming method called a time division type in which the supply and exhaust of the precursor are repeated in one film forming chamber have been proposed. In the time-division type film forming apparatus and film forming method, precursor gas supply, stop, exhaust, and reactive gas supply, stop, exhaust, and sometimes purge gas supply, stop, exhaust in one cycle Since the thin film at the atomic level is grown one layer at a time, there is a problem that the film forming speed is slow.

  A space division type in which the deposition chamber is divided into several zones (regions) and a single precursor or purge gas is supplied to each zone to move the substrate back and forth between the zones is also proposed. (For example, Patent Documents 1 and 2). The film formation speed is greatly improved by this space division type ALD method.

  In the space division type ALD method, as an example, a flexible substrate is transported along a predetermined transport path in a film forming chamber, and is moved back and forth between zones.

International Publication No. 2007/112370 Special table 2012-511106 gazette

  However, when trying to form a film on a flexible substrate with the space division type as described above, if the film of the substrate is thin, the substrate may break during transportation or wrinkles may occur on the substrate. Material transport becomes difficult. This is because the rigidity of the base material decreases as the base material becomes thin, and handling becomes particularly difficult with a base material having a large base material width.

  The present invention has been made to solve such a problem, and a thin film forming method capable of forming a thin film on a flexible substrate while suppressing the occurrence of folding and wrinkles during conveyance of the thin flexible substrate, and An object is to provide a thin film forming apparatus.

  More specifically, the thin film forming method according to the present invention includes one or more first zones having a mechanism for introducing and / or exhausting a precursor and one or more second zones other than that. And forming a thin film on the film base material by an atomic layer deposition method by passing the first zone and the second zone through the film base material. A process of bonding a film substrate to a carrier film in a vacuum vessel, a process of forming a thin film on the film substrate while conveying the carrier film bonded to the film substrate, and a carrier film from the film substrate after forming the thin film The carrier film peeled from the film substrate is reused during a series of film formation in a vacuum container.

  In addition, the thin film forming apparatus according to the present invention forms one or more first zones having a mechanism for introducing or / and exhausting a precursor, and one or more second zones other than that. A thin film is formed on the film substrate by an atomic layer deposition method by passing the first zone and the second zone through the film substrate, and in a vacuum vessel equipped with a film formation chamber A mechanism for bonding a part of the film substrate to a part of the carrier film, a mechanism for forming a thin film on the film substrate while transporting the carrier film bonded to the film substrate, and a film substrate after forming the thin film. A mechanism for peeling the carrier film, and a mechanism for looping the carrier film from which the film base material has been peeled off in a vacuum container and attaching the film again to another part of the film base material.

  ADVANTAGE OF THE INVENTION According to this invention, the thin film formation method and thin film formation apparatus which can form a thin film on a flexible base material can be provided, suppressing that a folding | folding and a wrinkle generate | occur | produce during conveyance of a thin flexible base material.

It is a schematic sectional drawing of the film-forming chamber of the film-forming apparatus concerning embodiment of this invention, Comprising: The figure which shows a mode that the flexible base material was bonded together to a part of band-shaped carrier film. It is a schematic sectional drawing of the film-forming chamber of the film-forming apparatus concerning embodiment of this invention, Comprising: The figure which has arrange | positioned the band-shaped carrier film. FIG. 2 is a cross-sectional view taken along a cutting line I-I ′ of the film forming apparatus of FIG. 1. The schematic sectional drawing of the film-forming chamber of the film-forming apparatus concerning another embodiment of this invention. The schematic sectional drawing of the film-forming chamber of the film-forming apparatus concerning another embodiment of this invention.

[Embodiment]
Hereinafter, a film forming apparatus and a film forming method according to an embodiment of the present invention (hereinafter referred to as a first embodiment) will be described with reference to FIGS.

  1 and 2 are schematic cross-sectional views showing the film forming chamber 100 of the film forming apparatus 1 according to the first embodiment, and show the configuration of the inside of the film forming chamber 100 in a front view. FIG. 1 shows a state in which the flexible base material 205 is conveyed using the carrier film 301, and FIG. 2 shows a state in which the flexible base material 205 is not supplied. FIG. 3 is a schematic cross-sectional view taken along the cutting line I-I ′ in FIG. 1 and shows a configuration in a side view in the film forming chamber 100.

  In each figure, the structure is appropriately enlarged, reduced, or omitted for explanation.

  A film forming apparatus 1 shown in FIGS. 1 to 3 is a space division type ALD film forming apparatus 1 that forms a thin film on a substrate by using an atomic layer deposition (ALD) method. 1 to 3 show only the film forming chamber 100, and a mechanism for unwinding and unwinding a base material necessary as a normal film forming apparatus is omitted here. In addition, mechanisms that can be easily assumed to be necessary for implementation by the parties involved, such as a vacuum pump and a roller driving device, are also omitted, and only the information necessary for explaining and implementing the present invention is illustrated briefly. ing. In the film forming apparatus 1, the inside of the film forming chamber 100 is divided into a plurality of parts, and a precursor or purge gas is supplied to any one or a plurality of zones Z1 to Z3, and a substrate is placed between the zones Z1 to Z3. This is a space division type ALD film forming apparatus of the type that is made to come and go.

  In the present embodiment, a flexible substrate 205 having a certain width (Y direction dimension) W1 and thickness t1 is used as the substrate. The material of the base material is not particularly limited, but is selected from flexible materials such as plastic film, plastic sheet, metal foil, metal sheet, paper, and non-woven fabric. Although the thickness of a base material is not specifically limited, The base material which has a thickness of 1 micrometer or more and 1000 micrometers or less is used. Since it is bonded and transported with a carrier film 301 to be described later, a rigidity that does not cause tearing or deformation is required at the step of bonding and the step of peeling to be described later.

  The flexible substrate 205 serving as a film formation substrate is a flexible sheet having a small thickness with respect to its width, and is supplied from a supply chamber (not shown) provided on one end side of the film formation chamber 100. Then, it moves along a traveling path P that reciprocates a plurality of times between a plurality of divided zones Z1 to Z3 toward a recovery chamber (not shown) provided on the other end side of the film forming chamber 100. As a conveyance method, a sheet-like flexible base material 205 wound in a roll shape is unwound from a supply roll (not shown), formed into a film while being conveyed, and wound around another collection roll (not shown). The so-called roll-to-roll method is used.

  As shown in FIGS. 1 and 2, the film forming apparatus 1 transports a flexible substrate 205 along a predetermined traveling path P, and a film forming chamber 100 having a plurality of zones Z1, Z2, and Z3 therein. Conveying guide rollers 201 and 202 and a control unit (not shown) for controlling the operation of each unit are provided.

  The film formation chamber 100 includes upper and lower walls and side walls each formed in a rectangular shape, and forms a rectangular parallelepiped internal space surrounded by these walls.

  In the film forming chamber 100, partition walls 211 and 212 that form surfaces along the XY plane are provided at two locations in the Z direction, respectively. The partition wall 211 partitions the first zone Z1 and the second zone Z2, and the partition wall 212 partitions the second zone Z2 and the third zone Z3. The partition walls 211 and 212 divide the film forming chamber 100 into three in the Z direction.

  The film forming chamber 100 includes a first zone Z1 that forms a first vacuum chamber into which a first precursor gas is introduced, a third zone Z3 that forms a third vacuum chamber into which a reactive gas is introduced, It is divided into a second zone Z2 that is interposed between the first zone Z1 and the third zone Z3 and forms a second vacuum chamber into which purge gas is introduced.

  The first precursor introduced into the first zone Z1 is appropriately selected according to the target deposition material. For example, when the material deposited on the flexible substrate 205 (target deposition material) is aluminum oxide, trimethylaluminum, dimethylaluminum isopropoxide (DAMI), aluminum trichloride, or the like is used. Depending on the type of precursor used and the required quality of the thin film, the film formation chamber may be appropriately heated. Although a heating mechanism is not shown, a mechanism for heating / temperature control of the entire film forming chamber or each zone can be provided.

  The reactive gas introduced into the third zone Z3 is appropriately selected according to the target deposition material. For example, when the target deposition material is aluminum oxide, water, ozone, hydrogen peroxide, oxygen, carbon dioxide, or the like is used. In this embodiment, these gases are activated by the plasma excited by the plasma electrode 203 installed in the third zone Z3, and react with the precursor layer previously adsorbed on the flexible base material 205 in the first zone Z1, 1 atomic layer is formed on the flexible substrate 205. There is a DC glow discharge using a DC power source as one of the means of plasma excitation. In addition to this, a pulsed DC power source or a medium wave (MF) power source can be used, and synchronization between each electrode can be achieved. A radio frequency (RF) power supply can also be used. Here, a method using plasma is shown as an activation method. However, when a thermal reaction is used in combination with a precursor gas, the third zone Z3 is particularly heated by separately providing a heating mechanism in the third zone Z3. You may do it. When a reactive gas having high reactivity is used, the third zone Z3 may not be heated.

  An inert gas is used as the purge gas introduced into the second zone Z2. As the inert gas, a gas appropriately selected from helium, argon, nitrogen, carbon dioxide and the like is used. Since it is only necessary to be inert with respect to the above-described precursor and reactive gas, it is not always necessary to be caught by the gases mentioned here. The term “inert” as used herein means that at a normal temperature or in a state where no special conditions such as activation are used, it does not react by simply mixing.

  In the present embodiment, one or more first zones having a mechanism for introducing or / and exhausting the precursor described above correspond to the first zone Z1 and the third zone Z3, and the other second zones are This corresponds to the second zone Z2.

  The partition walls 211 and 212 are formed with a plurality of slit-shaped passage ports 211a and 212a through which the flexible base material 205 passes. The passage ports 211a and 212a penetrate the partition walls 211 and 212 in the Z direction. In the present embodiment, the travel route P of the flexible base material 205 is a half of a reciprocating half, and ten passage ports 211a and 212a are formed in the partition walls 211 and 212 corresponding to the travel route P, respectively.

  The travel path P is a straight path along the Z direction that connects between the curved path folded in the first zone Z1 and the third zone Z3, and the curved path of the first zone Z1 and the curved path of the third zone Z3. Are arranged in parallel in the X direction, forming a zigzag shape. The travel route P reciprocates a plurality of times between the first zone Z1 and the third zone Z3, and then passes through the first zone Z1, the second zone Z2, and the third zone Z3 in order, and then returns to the second zone Z2. One cycle is repeated several times.

  The precursor gas is introduced from the introduction port (not shown) of the first zone Z1, and is exhausted from the exhaust port 220 (see FIG. 3) of the first zone Z1. There may be a plurality of introduction ports and exhaust ports in the zone.

  Inert gas is introduced into the second zone Z2 from an inlet (not shown). There may be a plurality of inlets in the zone.

  Reactive gas is introduced into the third zone Z3 from an inlet (not shown) and exhausted from the exhaust port 221 (see FIG. 3) of the third zone Z3. There may be a plurality of introduction ports and exhaust ports in the zone.

  The precursor gas or reactive gas introduced into the first zone Z1 and the third zone Z3 is exhausted by a vacuum pump through an exhaust port (see FIG. 3). The pressure in the second zone Z2 is kept higher than the pressure in the first zone Z1 and the third zone Z3. For this reason, the first precursor gas and the reactive gas introduced into the first zone Z1 and the third zone Z3, respectively, are maintained under conditions that are difficult to diffuse into the second zone Z2.

  The first guide roller 201 and the second guide roller 202 are columnar or cylindrical and have a rotation axis along the Y direction. A plurality of first guide rollers 201 and second guide rollers 202 are arranged in parallel in the X direction at both ends in the Z direction in the film forming chamber 100. In the present embodiment, five first guide rollers 201 and five second guide rollers 202 are provided side by side in the X direction. End portions of the rotation shafts of the first guide roller 201 and the second guide roller 202 are rotatably supported on the side wall of the film forming chamber 100.

  In the X direction, the second guide roller 202 is disposed at a position facing the intermediate position between the adjacent first guide rollers 201. That is, the first guide roller 201 and the second guide roller 202 are alternately positioned in the X direction. The first guide roller 201 and the second guide roller 202 are each provided with a clip-type clamping mechanism that clamps both ends of the flexible base material 205 in the width direction, for example, with clips.

  By rotating the flexible base material 205 alternately on the outer peripheral surfaces of the first guide roller 201 and the second guide roller 202 at both ends in the Z direction, the traveling direction of the flexible base material 205 is changed, that is, the flexible base material 205. Is bent and folded. Accordingly, the traveling directions of the traveling routes P adjacent in the X direction are opposite to each other. In the film forming chamber 100, the flexible substrate 205 is alternately folded back by the outer peripheral surface of the first guide roller 201 and the outer peripheral surface of the second guide roller 202, and is guided along the zigzag travel path P. The sheet is conveyed while reciprocating so as to pass through the zone Z1 and the third zone Z3 a plurality of times.

  The number of times the flexible substrate 205 passes through the first zone Z1 and the third zone Z3, that is, the number of reciprocations, is a cycle in which an atomic layer necessary for obtaining a desired film thickness can be deposited on the surface of the flexible substrate 205. Designed to be the same number.

  Since the carrier film 301 is installed for the purpose of reinforcing the flexible base material 205 which is thin and difficult to convey, the carrier film 301 needs to have sufficient rigidity for conveyance. Accordingly, a certain amount of thickness is required, and a thickness of about 50 μm or more is used. The material of the carrier film 301 is not particularly limited as long as the film quality is not affected at the stage of film formation. Accordingly, the material is not particularly limited, but is selected from flexible materials such as plastic film, plastic sheet, metal foil, metal sheet, paper, and non-woven fabric. Those that do not cause severe degassing, those that do not deteriorate by exposure to precursors, those that do not deteriorate by plasma exposure, and the like are suitable.

  One of the surfaces of the carrier film 301 is in contact with the flexible substrate 205 in a series of steps. Of the surfaces of the carrier film 301, the surface in contact with the flexible substrate 205 is desirably adhesive. Thereby, the flexible base material 205 can be firmly held and transported easily. Adhesiveness is sufficient to hold the flexible base material 205 and is preferably such that it can be easily separated when separated.

  The carrier film 301 is installed along the conveyance path P of the flexible base material 205. The starting point and the ending point are connected to each other and circulate (loop) in the film forming chamber. That is, the carrier film 301 becomes a band.

  The tension control roller 305 is columnar or cylindrical, and has a rotation axis along the Y direction. The tension control roller 305 is a part of a mechanism for applying a tension to the band of the carrier film 301 to stretch the band, and the axis position of the tension control roller 305 or the diameter of the roller is controlled by a controller (not shown). An example of a method for controlling the diameter of the roller is a protrusion of a structure from the inside of the roller.

  The flexible base material 205 unwound from a supply roll (not shown) meets the carrier film 301 at the first one of the first guide rollers 201 and is bonded to each other. At this time, although not shown here, the two films may be bonded together using a nip roller.

  In order to prevent gas from being caught, bonding is performed under vacuum. A vacuum is defined as a state in which the gas pressure is lower than atmospheric pressure.

  In the present embodiment, the bonding is performed in the first zone Z1, but the bonding may be performed by providing a separate zone dedicated for the bonding. In that case, it is preferable to provide a differential exhaust or the like and set the gas pressure in the zone to be lower.

  After the flexible base material 205 and the carrier film 301 are conveyed while being bonded together to form a thin film, in this example, both of the flexible base material 205 and the carrier film 301 are placed at the last roller of the second guide rollers 202. The film 301 is separated (peeled). The separated flexible substrate 205 exits the film formation chamber and is wound up on a collection roll (not shown). On the other hand, the carrier film 301 separated at the same time is rotated by a plurality of guide rollers 306 dedicated to the carrier film 301 and finally returns to the first one of the first guide rollers 201, and this process is repeated thereafter. In other words, the carrier film once bonded and conveyed is looped and reused in the deposition chamber.

  The guide roller 306 has a columnar shape or a cylindrical shape, and has a rotation axis along the Y direction.

  The guide roller 306 can be driven by connecting a power source if necessary. By applying the drive, the traveling of the carrier film 301 is stabilized, and the force for pulling the carrier film 301 during conveyance can be reduced. Thereby, it becomes easy to control the tension of the flexible base material 205 during conveyance, and the flexible base material 205 can be prevented from being bent or wrinkled. The driving may be applied not only to the guide roller 306 dedicated to the carrier film but also to the first guide roller 201 and the second guide roller 202 in addition or exclusively.

  Film formation is performed as follows as an example.

  A carrier film 301 is stretched in the film forming chamber 100 so as to loop in the film forming chamber 100 as shown in FIG. 2, and is adjusted to an appropriate tension by a tension control roller 305. After that, the flexible base material 205 is installed as shown in FIG. At this time, a portion of the flexible substrate 205 existing in the film forming chamber becomes a lead portion and is not suitable for a product.

  If necessary, the entire film formation chamber or each zone is heated to a desired temperature. Since the temperature depends on the type of precursor used and the shape, structure, and / or material of the film forming chamber, it is not appropriate to define the temperature, and an appropriate temperature is appropriately used according to each implementation situation.

  A desired precursor is supplied to the first zone Z1, and a desired reactive gas is supplied to the third zone Z3. An inert gas is supplied to the second zone Z2. At this time, the degree of opening of exhaust ports (see FIG. 3) installed in the first zone Z1 and the third zone Z3 is adjusted respectively, and the flow rate of the inert gas supplied to the second zone Z2 is adjusted, so that the second The state where the gas pressure or the supply flow rate of the zone Z2 is higher than that of the first zone Z1 and the third zone Z3 is created.

  Next, electric power is supplied to the plasma electrode 203 installed in the third zone Z3 to start discharging.

  A supply roll, a collection roll, a plurality of guide rollers 201, 202, 306, and a tension control roller 305 (not shown) are rotated. Thereby, the flexible base material 205 is unwound from a supply roll (not shown), and the flexible base material 205 is taken up to a collection roll (not shown).

  At this time, the flexible base material 205 is divided from a supply chamber provided on one end side of the film formation chamber 100 toward a recovery chamber provided on the other end side of the film formation chamber 100 that supplies the flexible base material 205. Further, the zigzag travel path P that reciprocates a plurality of times between the plurality of zones Z1, Z2, and Z3 moves while being bent and deformed in the thickness direction.

  When attention is paid to a part of the flexible base material 205 in the transport direction, the flexible base material 205 is unwound from the supply roll and first transported to the first zone Z1.

  At this time, the flexible base material 205 meets the carrier film 301 by the guide roller 201 and is bonded to each other to become the base material 302 in a state where the carrier film 301 is attached to the flexible base material 205 (hereinafter referred to as the base material 302). To do). At this time, since the first precursor is introduced into the first zone Z1, the first precursor is adsorbed on both surfaces of the substrate 302 when the substrate 302 passes through the first zone Z1.

  In addition, the conveyance speed of the base material 302 in the first zone Z1 is calculated from the saturation adsorption time and the passage distance so that the time during which the base material 302 passes through the first zone Z1 is longer than the saturation adsorption time.

  Subsequently, the base material 302 is conveyed to the second zone Z <b> 2 through the passage port 211 a provided in the partition wall 211. And while passing the 2nd zone Z2 along the driving path P, the excess 1st precursor adsorb | sucked to the base material 302 is vaporized and purged. The conveyance speed of the base material 302 in the second zone Z2 is calculated from the passing distance so that a sufficient purge time can be obtained.

  Then, the base material 302 is conveyed to the 3rd zone Z3 through the passage port 212a provided in the partition wall 212 of the partition arrange | positioned between the 2nd zone Z2 and the 3rd zone Z3.

  The reactive gas is introduced into the third zone Z3, and the plasma is excited by the plasma electrode 203 to which power is applied, so that the base material 302 passes through the third zone Z3. The first precursor adsorbate reacts with the reactive gas on the surface on the plasma electrode side of the first precursor adsorbate adsorbed on both surfaces of the first thin film to form a target thin film.

  After the first precursor adsorbate and the reactive gas react in the third zone Z3, the substrate 302 is separated from the partition wall 212 provided between the third zone Z3 and the second zone Z2. It is again conveyed to the second zone Z2 through the passage port 212a.

  The conveyance speed of the base material 302 in the third zone Z3 is calculated from the reaction time and the passing distance so that the time for the base material 302 to pass through the third zone Z3 is longer than the reaction time.

  Thereafter, the base material 302 is conveyed again to the first zone Z1 through the passage port 211a provided in the partition wall 211 arranged between the second zone Z2 and the first zone Z1.

  The above process is one cycle of atomic layer deposition, and one atomic layer is deposited on the base material 302, particularly on the flexible base material 205 side, by this one-cycle process. By repeating this one cycle a plurality of times, an atomic layer deposition film having a desired film thickness can be formed on the surface of the base material 302 on the flexible base material 205 side.

  Note that when the above-described one cycle is repeated a plurality of times, the conveyance speed of the substrate 302 depends on the time required to expose the substrate 302 in the first zone Z1, the second zone Z2, and the third zone Z3, and the basic speed. It is set to the lowest speed among the conveyance speeds calculated from the passing distance through which the material 302 passes through each zone.

  After the atomic layer deposition film having a desired film thickness is formed, the base material 302 is divided into the flexible base material 205 and the carrier film 301 in one of the plurality of guide rollers 202 installed in the third zone Z3. The separated flexible substrate 205 is then separated from the film forming chamber 100 and taken up by a collection roll (not shown). Similarly, the separated carrier film 301 is rotated by a guide roller 306 dedicated to the carrier film, enters the first zone Z1 through the passage ports 212a and 211a provided in the partition wall, and is the first of the guide rollers 201. Then, it is reused in a loop by meeting another portion of the flexible base material 205 and bonding it again.

  According to the film forming apparatus 1 and the film forming method according to the present embodiment, the following effects can be obtained. In other words, the carrier film 301 is bonded to the flexible base material 205 and transported, so that even if the flexible base material 205 is a thin base material, generation of breakage and wrinkles can be suppressed, and the carrier film can be transported without difficulty. The amount of the carrier film 301 used can be reduced by making the band 301 into a band shape and circulating it in the deposition chamber for reuse.

  In addition, by giving appropriate adhesiveness to one surface of the carrier film 301, the bonding to the flexible substrate 205 is facilitated. In addition, gas sticking can be reduced by performing the bonding under vacuum. Moreover, bonding and conveyance can be easily implemented by setting the carrier film 301 to a thickness of 100 μm or more.

  In addition, by driving a guide roller with which a part of the carrier film 301 comes into contact during use, the traveling of the carrier film 301 is stabilized, and the force for pulling the carrier film 301 during transportation can be reduced. Thereby, it becomes easy to control the tension of the flexible base material 205 during conveyance, and the flexible base material 205 can be prevented from being bent or wrinkled.

  Further, by applying tension to the carrier film 305 having a loop structure (band shape) by the tension control roller 305, it is possible to easily perform the bonding to the flexible base material 205 and the separation from the flexible base material 205, and the carrier. The idle rotation of the film 301 can be prevented.

  The present invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the present invention. In addition, the specific configuration, material, and the like of each unit are not limited to those illustrated in the above embodiment, and can be changed as appropriate.

  For example, in another ALD film forming apparatus 2 shown in FIG. 4, a 0th zone Z0 for supplying a purge gas is newly provided, and one of the guide rollers 201 is arranged in the 0th zone Z0. Thus, even when the film forming apparatus is in use, the flexible base material 205 does not touch the precursor before bonding, and thus the adhesiveness imparted to the carrier film 301 can be maintained for a longer time.

  In another ALD film forming apparatus 3 shown in FIG. 5, a guide roller 307 is newly provided in the second zone Z2 of the film forming chamber 100, and the flexible base material 205 is introduced into the second zone Z2 of the film forming chamber 100. The carrier film 301 and the flexible base material 205 are bonded together at the same time as being rotated by the guide roller 307. Thereby, in this embodiment, since the carrier film 301 does not touch the precursor before being bonded to the flexible base material 205 during use of the film forming apparatus 3, the adhesiveness imparted to the carrier film 301 is further increased. It can be maintained for a long time.

  In the process of producing a high-quality thin film on a substrate while the substrate is conveyed by the ALD method, the present invention can form a thin film on a thin flexible substrate and at the same time reduce the amount of support (carrier) film used as a consumable This can be reduced and contributes to the reduction of production costs.

  The film with a thin film manufactured by the film forming method and film forming apparatus using the atomic layer deposition method according to the present invention varies depending on the material and configuration used, but the gas barrier film, heat insulating film, electromagnetic wave shielding film, insulating film, dielectric It can be applied to films, conductive films and the like.

1 ... ALD film forming apparatus (film forming apparatus),
2 ... ALD film forming device (film forming device),
3 ... ALD film forming device (film forming device),
100 ... deposition chamber,
201, 202 ... guide rollers (guide portions),
203 ... Plasma electrode,
205: Flexible base material (film formation base material),
211, 212 ... partition walls 211a, 212a ... passing ports,
220, 221 ... exhaust port,
301 ... carrier film,
302: a substrate in a state where a carrier film is bonded to a flexible substrate;
305 ... tension control roller,
306 ... Guide roller for carrier film
307 ... Guide roller,
Z0, Z1, Z2, Z3 ... zone,
P: Traveling route.

Claims (9)

One or a plurality of first zones having a mechanism for introducing and / or exhausting a precursor and one or a plurality of other second zones are provided in the film forming chamber, and the film base is provided with the first zone. A thin film forming method of forming a thin film on a film substrate by an atomic layer deposition method by passing through the second zone and the second zone,
Bonding the film substrate to a carrier film in a vacuum container having the film formation chamber;
Forming a thin film on the film substrate while conveying the carrier film to which the film substrate is bonded; and
Peeling the carrier film from the film substrate after thin film formation,
The film forming method, wherein the carrier film peeled from the film substrate is reused during a series of film formation in the vacuum container.   2. The thin film forming method according to claim 1, wherein at least one side of the carrier film that comes into contact with the flexible substrate at the time of use has adhesiveness.   The thin film forming method according to claim 1, wherein the carrier film has a loop shape.   The method for forming a thin film according to claim 1, wherein the steps of laminating and peeling the carrier film are performed under vacuum.   The thin film forming method according to claim 1, wherein the carrier film has a thickness of 100 μm or more.   2. The carrier film according to claim 1, wherein a power source is connected to one, a plurality, or all of the rollers in contact with a part of the carrier film during use, and the roller is driven during transportation. The thin film formation method in any one of -5.   Tension is applied to the carrier film between a portion where the film substrate is peeled from the loop-shaped carrier film and a portion where another portion of the film substrate is bonded to the loop-shaped carrier film. The thin film forming method according to claim 3, wherein the thin film forming method is characterized. One or a plurality of first zones having a mechanism for introducing or / and evacuating a precursor and one or a plurality of other second zones are provided in the film forming chamber, and the film base is provided with the first zone. A thin film forming apparatus for forming a thin film on a film substrate by an atomic layer deposition method through the zone and the second zone,
A mechanism for bonding a part of the film substrate to a part of a carrier film in a vacuum container including the film forming chamber;
A mechanism for forming a thin film on the film substrate while transporting the carrier film on which the film substrate is bonded;
A mechanism for peeling the carrier film from the film substrate after thin film formation;
A mechanism for looping the carrier film from which the film substrate has been peeled off in the vacuum container and bonding the carrier film to another part of the film substrate again.   Tension is applied to the carrier film between a portion where the film substrate is peeled from the loop-shaped carrier film and a portion where another portion of the film substrate is bonded to the loop-shaped carrier film. The thin film forming apparatus according to claim 8, further comprising a mechanism.

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