JP2017050420A - Semiconductor light emitting device and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having high light extraction efficiency, and manufacturing method for the same.SOLUTION: A semiconductor light emitting device includes a substrate having light reflectivity, a first conductive member, a second conductive member, a first semiconductor layer provided on the substrate via the first conductive member, a second semiconductor layer which is provided on the substrate through the second conductive member, and located between the substrate and the first semiconductor layer, and a light emitting layer provided between a part of the first semiconductor layer and the second semiconductor layer.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a semiconductor light emitting device and a method for manufacturing the same.

  A semiconductor light emitting device has a configuration in which a semiconductor layer of an LED (Light Emitting Diode) is epitaxially grown on a growth substrate and bonded to a support substrate, and then the growth substrate is removed. In a semiconductor light emitting device, improvement in light extraction efficiency is required.

JP 2014-49642 A JP 2013-201253 A JP 2006-128457 A

  An object of the embodiment is to provide a semiconductor light emitting device with high light extraction efficiency and a method for manufacturing the same.

  The semiconductor light emitting device according to the embodiment includes a substrate having light reflectivity, a first conductive member, a second conductive member, a first semiconductor layer provided on the substrate via the first conductive member, A second semiconductor layer provided on the substrate via the second conductive member and positioned between the substrate and the first semiconductor layer; a part of the first semiconductor layer; and the second semiconductor layer; A light emitting layer provided between the two.

1 is a cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment. 10A to 10D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. 10A to 10C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment; FIG. It is sectional drawing which illustrates the semiconductor light-emitting device concerning 2nd Embodiment. 10A to 10C are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to the second embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device concerning 3rd Embodiment. FIGS. 9A to 9C are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to a third embodiment. FIGS. FIG. 10 is a process cross-sectional view illustrating a method for manufacturing a semiconductor light emitting device according to a third embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device concerning 4th Embodiment. It is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device concerning 4th Embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device concerning 5th Embodiment. FIGS. 9A to 9D are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to a fifth embodiment. FIGS. (A) And (b) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device concerning 5th Embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device concerning 6th Embodiment. (A) And (b) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device concerning 6th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the first embodiment will be described.
FIG. 1 is a cross-sectional view illustrating a semiconductor light emitting device according to this embodiment.

  As shown in FIG. 1, a semiconductor light emitting device 100 according to this embodiment is provided with a substrate 10. On the substrate 10, wirings 10a and 10b are provided. On the substrate 10, the wirings 10a and 10b are patterned in a predetermined pattern. Bumps 11 are provided on the wiring 10a. Bumps 12 are provided on the wiring 10b. On the wirings 10a and 10b, the bumps 11 and the bumps 12 are placed with a predetermined interval. An electrode part 13 is provided on the bump 11, and an electrode part 14 is provided on the bump 12. On the electrode part 13, the reflection part 15 is provided. In addition, a reflective portion 18 is provided on the electrode portion 14. A p-type semiconductor layer 16 is provided on the reflecting portion 15. A light emitting layer 17 is provided on the semiconductor layer 16. An n-type semiconductor layer 19 is provided on the light emitting layer 17 and the reflection portion 18. The semiconductor layer 16, the light emitting layer 17, and the semiconductor layer 19 are in contact with each other.

  A direction from the substrate 10 toward the semiconductor layer 19 is a Z direction (first direction). One direction orthogonal to the Z direction is defined as an X direction (second direction). A direction orthogonal to the Z direction and the X direction is defined as a Y direction (third direction).

  The thickness of the electrode part 13 in the Z direction is smaller than the thickness of the electrode part 14 in the Z direction.

  The chip 91 includes electrode portions 13 and 14, a reflection portion 15, a semiconductor layer 16, a light emitting layer 17, a reflection portion 18, and a semiconductor layer 19. The structure 92 includes bumps 11 and 12 and a chip 91. A plurality of structures 92 may be provided on the substrate 10.

  A resin layer 81 that covers the structure 92 is provided on the substrate 10. In the resin layer 81, the phosphor 81a is dispersed.

The substrate 10 is formed of an insulating material such as silicon oxide (SiO ₂ ), for example. The substrate 10 is preferably a ceramic substrate having a low coefficient of thermal expansion. The substrate 10 is, for example, a white substrate. The substrate 10 has reflectivity. The reflectance of the substrate 10 is higher than that of the bumps 11 and 12, for example. The substrate 10 may be a printed circuit board, for example.

  The semiconductor layer 16, the light emitting layer 17, and the semiconductor layer 19 include, for example, a nitride semiconductor. The light emitting layer 17 has a single quantum well (SQW) configuration or a multiple quantum well (MQW) configuration.

  The light emitting layer 17 having a single quantum well configuration includes, for example, two barrier layers and a well layer provided between the barrier layers. The light emitting layer 17 having a multiple quantum well configuration includes three or more barrier layers and a well layer provided between the barrier layers. For the barrier layer, for example, a compound semiconductor such as gallium nitride (GaN) can be used. For the well layer, for example, a compound semiconductor such as indium gallium nitride (InGaN) can be used. When the barrier layer contains indium (In), the composition ratio of indium in the barrier layer is lower than the composition ratio of indium in the well layer.

  The reflecting portions 15 and 18 include a material having a high reflectance such as silver (Ag) and aluminum (Al), for example.

That is, the semiconductor light emitting device 100 according to the present embodiment includes the substrate 10, the first resin layer containing the phosphor, the first and second semiconductor layers, the light emitting layer 17, and the first and second conductive members. Including. The first resin layer is a resin layer 81, for example. The first semiconductor layer is provided between the substrate 10 and the first resin layer and has the first conductivity type. The first semiconductor layer is, for example, the semiconductor layer 19. The first conductive member is provided between the substrate 10 and a part of the first semiconductor layer. The first semiconductor layer is provided on the substrate 10 via the first conductive member. The first conductive member is, for example, the electrode unit 14. The first conductive member may include a bump 12. The first conductive member may include the wiring 10b. The light emitting layer 17 is provided between the substrate 10 and the other part of the first semiconductor layer. The second semiconductor layer is provided between the substrate 10 and the light emitting layer 17 and has the second conductivity type. The second semiconductor layer is provided on the substrate 10 via the second conductive member. The second semiconductor layer is, for example, the semiconductor layer 16. The second conductive member is provided between the substrate 10 and the second semiconductor layer. The second conductive member is, for example, the electrode unit 13. The second conductive member may include a bump 11. The second conductive member may include the wiring 10a.
As shown in FIG. 1, a first reflecting portion (reflecting portion 18) may be provided between the first semiconductor layer (semiconductor layer 16) and the first conductive member (for example, the electrode portion 14). The light reflectance of the reflecting portion 18 is higher than the light reflectance of the electrode portion 14. Moreover, the 2nd reflection part (reflection part 15) may be provided between the 2nd semiconductor layer (semiconductor layer 16) and the 2nd electrically-conductive member (for example, electrode part 13).
The light reflectance of the reflecting portion 15 is higher than the light reflectance of the electrode portion 13.
The resin layer 81 is provided around the structure 92. That is, the resin layer 81 and the structure 92 overlap in a direction orthogonal to the Z direction (for example, the X direction and the Y direction).

Next, a method for manufacturing the semiconductor light emitting device 100 according to this embodiment will be described.
2A to 2D are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to this embodiment.
3A to 3C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
FIG. 4 is a process cross-sectional view illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.

  First, as shown in FIG. 2A, a substrate 70 is prepared. The substrate 70 is, for example, a silicon substrate. The substrate 70 may be a sapphire substrate, for example.

  Next, as shown in FIG. 2B, the n-type semiconductor layer 19, the light emitting layer 17, and the p-type semiconductor layer 16 are formed in this order on the substrate 70. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are, for example, nitride semiconductors. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are formed by a film formation method such as epitaxial growth.

  Next, as illustrated in FIG. 2C, the reflecting portion 15 is formed on the semiconductor layer 16. The reflecting portion 15 includes a material having a high reflectance such as silver (Ag) or aluminum (Al).

  Next, as shown in FIG. 2D, a part of the light emitting layer 17, the semiconductor layer 16, and the reflecting portion 15 formed on the semiconductor layer 19 is removed, and a part of the surface of the semiconductor layer 19 is exposed. A reflective portion 18 is formed on the exposed surface of the semiconductor layer 19. The reflector 18 is separated from the light emitting layer 17 and the semiconductor layer 16.

  Next, as shown in FIG. 3A, the electrode part 14 is formed on the reflection part 18. The electrode portion 14 is formed without being in contact with the light emitting layer 17 and the semiconductor layer 16. Further, the electrode part 13 is formed on the reflection part 15. Thereby, the chip 91 including the semiconductor layer 19, the light emitting layer 17, the reflection portion 18, the semiconductor layer 16, the reflection portion 15, the electrode portion 13, and the electrode portion 14 is formed on the substrate 70.

  Next, as shown in FIG. 3B, bumps 11 and 12 are formed on the substrate 10 provided with the wirings 10a and 10b. The bump 11 is formed on the wiring 10a. The bump 12 is formed on the wiring 10b. Then, the chip 91 formed on the substrate 70 is bonded to the substrate 10 via the bumps 11 and 12 by flip chip bonding (FCB). In this case, the bump 11 is brought into contact with the electrode portion 13 of the chip 91, and the bump 12 is brought into contact with the electrode portion 14. That is, the chip 91 formed on the substrate 70 is turned upside down together with the substrate 70 and bonded to the substrate 10 via the bumps 11 and 12. Thereby, the structure 92 is formed from the bumps 11 and 12 and the chip 91. A plurality of structures 92 are formed on the substrate 10 by bonding a plurality of chips 91. Note that the chip 91 may be bonded to the wirings 10a and 10b of the substrate 10 with a conductive adhesive (first and second connecting members) such as solder or silver paste.

  For example, the ductility of the first connection member is higher than the ductility of the electrode part 14. For example, the ductility of the second connection member is higher than the ductility of the electrode portion 13. For example, the melting point of the first connection member is lower than the melting point of the electrode part 14. For example, the melting point of the second connection member is lower than the melting point of the electrode portion 13.

  Next, the substrate 70 is removed from the chip 91 as shown in FIG. The substrate 70 is removed by an etching process such as wet etching. Next, as shown in FIG. 4, a resin layer 81 that covers the entire structure 92 is formed on the substrate 10. In the resin layer 81, the phosphor 81a is dispersed.

  Thereafter, as shown in FIG. 1, the resin layer 81 and the substrate 10 are divided at a predetermined interval, and are separated into individual semiconductor light emitting devices 100 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 100 is manufactured through the steps shown in FIGS.

Next, the effect of this embodiment will be described.
A semiconductor layer (a film corresponding to the semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16) is epitaxially grown on the growth substrate, a reflective portion is formed on the semiconductor layer, bonded to the support substrate, and the growth substrate is removed. There is a configuration to do. The LED chip having such a structure is mounted on the package substrate. In this configuration, the light emitted from the LED chip may be reflected in the package and enter the support substrate. When the support substrate is a light-absorbing substrate (for example, a silicon substrate), such return light is absorbed by the support substrate, thereby reducing light extraction efficiency. For example, even when the reflective portion is provided between the support substrate and the semiconductor layer as described above, the return light is incident on the side surface of the support substrate, and thus light absorption occurs. Therefore, the support substrate hinders improvement in light extraction efficiency.

  On the other hand, in the semiconductor light emitting device 100 according to the present embodiment, the chip 91 is mounted on the substrate 10 without a support substrate. The substrate 10 has reflectivity. The reflectance of the substrate 10 is higher than that of a support substrate (for example, a silicon substrate), for example. In the embodiment, since there is no support substrate that absorbs the return light, the light extraction efficiency is improved. Further, the step of attaching to the support substrate can be omitted. Thereby, a manufacturing process can be shortened and manufacturing cost reduction can be aimed at.

  There is a configuration in which a semiconductor layer having a large area is obtained by using a silicon substrate having light absorption as a growth substrate. In this case, light loss is suppressed by removing the growth silicon substrate. In order to maintain mechanical strength when removing the growth silicon substrate, a support substrate is generally used. In this configuration, as described above, the problem of absorption of return light occurs due to the support substrate.

  On the other hand, in the semiconductor light emitting device 100 according to this embodiment, the chip 91 is mounted on the substrate 10 without a support substrate as described above. By not using a support substrate, high light extraction efficiency can be obtained. Furthermore, high productivity can be obtained. That is, the configuration of the embodiment is particularly advantageous in a configuration using a light-absorbing silicon substrate as the growth substrate.

(Second Embodiment)
Next, a second embodiment will be described.
FIG. 5 is a cross-sectional view illustrating a semiconductor light emitting device according to this embodiment.

  As shown in FIG. 5, in the semiconductor light emitting device 200 according to this embodiment, a resin layer 21 is provided on the substrate 10. The resin layer 21 covers the side surface of the structure 92 formed on the substrate 10. A resin layer 22 is provided on the resin layer 21. A phosphor 22 a is dispersed in the resin layer 22. The configuration other than the configuration in which the resin layers 21 and 22 and the phosphor 22a are provided instead of the resin layer 81 and the phosphor 81a is the same as that of the semiconductor light emitting device 100 according to the first embodiment described above. Further, the resin layer 21 may have light reflectivity for reflecting the light emitted from the light emitting layer 17 and the light emitted from the phosphor 22a. Furthermore, the resin layer 21 may include a material having high thermal conductivity. For example, a white resin may be used for the resin layer 21.

Next, a method for manufacturing the semiconductor light emitting device 200 according to this embodiment will be described.
6A to 6C are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to this embodiment.
First, similarly to the method for manufacturing the semiconductor light emitting device 100 according to the first embodiment, the steps shown in FIGS. 2A to 3B are performed.

  Next, as illustrated in FIG. 6A, a resin layer 21 is formed on the substrate 10 by applying a raw material liquid such as a liquid resin with a coating apparatus such as a dispenser. The resin layer 21 covers a portion below the upper surface of the semiconductor layer 19. In this case, the height of the resin layer 21 is adjusted by adjusting the amount of the raw material liquid applied by the dispenser. The resin layer 21 may include a material having light reflectivity. Further, the resin layer 21 may include a material having a high thermal conductivity. Next, the substrate 70 is removed from the semiconductor layer 19 as shown in FIG. The substrate 70 is removed by an etching process such as wet etching. At this time, when the chemical solution for wet etching is a chemical solution that exerts an etching effect on the substrate 10, the resin layer 21 serves as a mask for the substrate 10.

  Next, as shown in FIG. 6C, a resin layer 22 is formed on the semiconductor layer 19 and the resin layer 21. In the resin layer 22, the phosphor 22a is dispersed. Thereafter, as shown in FIG. 5, the resin layers 21 and 22 and the substrate 10 are cut at a predetermined interval to be separated into individual semiconductor light emitting devices 200 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 200 is manufactured by the steps shown in FIGS. 2A to 3B and FIGS. 6A to 6C.

Next, the effect of this embodiment will be described.
According to the present embodiment, in the semiconductor light emitting device 200 according to the present embodiment, the substrate 10 is covered with the resin layer 21. When the substrate 70 is removed by wet etching, the resin layer 21 covers the upper surface of the substrate 10, so that the chemical solution for etching directly acts on the substrate 10. Thereby, the etching conditions are relaxed. In addition, since the substrate 10 is etched with the chemical solution, it is possible to suppress the occurrence of trouble such as the structure 92 being peeled off from the substrate 10.

  Moreover, when the resin layer 21 contains a material with high thermal conductivity, the heat dissipation in the semiconductor light emitting device 200 can be improved. Furthermore, when the resin layer 21 includes a material having a high reflectance, the light extraction efficiency can be improved. The effects other than the above are the same as those in the first embodiment.

(Third embodiment)
Next, a third embodiment will be described.
FIG. 7 is a cross-sectional view illustrating a semiconductor light emitting device according to this embodiment.
As shown in FIG. 7, in the semiconductor light emitting device 300 according to this embodiment, a resin layer 32 is provided immediately above the chip 91, that is, immediately above the semiconductor layer 19. A resin layer 31 is provided on the side surfaces of the chip 91 and the resin layer 32. The upper surfaces of the resin layers 31 and 32 (surfaces facing the resin layer 31) are concavely curved.

  Further, the space between the bumps 11 and 12 is buried with a resin layer 31. A resin layer 33 is provided on the resin layers 31 and 32.

  The resin layer 31 may include a light reflective material. Further, the resin layer 31 may include a material having high thermal conductivity. In the resin layer 32, phosphors 32a are dispersed. The resin layer 33 is preferably a transparent resin. The configuration other than the configuration in which the resin layers 31, 32, 33, and the phosphor 32a are provided instead of the resin layer 81 and the phosphor 81a is the same as that of the semiconductor light emitting device 100 according to the first embodiment.

Next, a method for manufacturing the semiconductor light emitting device 300 according to this embodiment will be described.
8A to 8C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
FIG. 9 is a process cross-sectional view illustrating a method for manufacturing a semiconductor light emitting device according to this embodiment.
First, similarly to the method for manufacturing the semiconductor light emitting device 100 according to the first embodiment, the steps shown in FIGS. 2A to 3B are performed.

  Next, as illustrated in FIG. 8A, the resin layer 31 is formed on the substrate 10 so as to cover the structures 92 and the side surfaces of the substrate 70. In this case, the resin layer 31 is formed on the substrate 10 by applying the raw material liquid of the resin layer 31 with a coating device such as a dispenser. The raw material liquid of the resin layer 31 is solidified in a state where the portion in contact with the substrate 70 is raised by surface tension. Thereby, the upper surface of the resin layer 31 becomes a concave curved surface shape. Moreover, the resin layer 31 may contain the material which has light reflectivity. Furthermore, the resin layer 31 may include a material having high thermal conductivity.

  Next, as shown in FIG. 8B, the substrate 70 is removed from the chip 91 by, for example, an etching process such as wet etching.

  Next, as illustrated in FIG. 8C, the resin layer 32 is formed in the region on the chip 91 where the substrate 70 is removed. In this case, the resin layer 32 is formed on the chip 91 by applying the raw material liquid of the resin layer 32 onto the semiconductor layer 19 of the chip 91 by a coating device such as a dispenser. The raw material liquid of the resin layer 32 is solidified in a state where the portion in contact with the resin layer 31 is raised by surface tension. Thereby, the upper surface of the resin layer 32 is formed in a concave curved surface shape. In the resin layer 32, phosphors 32a are dispersed.

Next, as shown in FIG. 9, the resin layer 33 is formed on the resin layer 31 and the resin layer 32. The resin layer 33 is transparent to the light emitted from the light emitting layer 17 and the light emitted from the phosphor 32a. That is, the resin layer 33 has light transmittance.
Next, as shown in FIG. 7, the resin layers 31 and 33 and the substrate 10 are divided at a predetermined interval to be separated into individual semiconductor light emitting devices 300 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 300 is manufactured by the steps shown in FIGS. 2A to 3B and FIGS. 8A to 9.

Next, effects of the semiconductor light emitting device 300 according to the present embodiment will be described.
According to this embodiment, in the semiconductor light emitting device 300 according to this embodiment, the upper surface of the resin layer 32 is formed in a concave curved surface shape. Thereby, since light can be condensed in the directly upward direction, the orientation of light is improved. A resin layer 33 having light transmittance is provided on the resin layer 32 in which the phosphors 32a are dispersed. As a result, the light emitted from the chip 91 and the light emitted from the phosphor 32a in the resin layer 32 are mixed in the resin layer 33, thereby suppressing color breakup. The effects other than the above are the same as those in the second embodiment.

(Fourth embodiment)
Next, a fourth embodiment will be described.
FIG. 10 is a cross-sectional view illustrating a semiconductor light emitting device according to this embodiment.
As shown in FIG. 10, in the semiconductor light emitting device 400 according to the present embodiment, the resin layer 41 is provided on the resin layer 31 and the resin layer 32. The resin layer 41 is formed in a convex lens shape in which a region directly above the resin layer 32 has a convex surface facing upward. The configuration other than the configuration in which the resin layer 41 is formed instead of the resin layer 33 is the same as that of the semiconductor light emitting device 300 according to the above-described third embodiment. Moreover, the resin layer 41 has light transmittance.

Next, a method for manufacturing the semiconductor light emitting device 400 according to this embodiment will be described.
FIG. 11 is a process cross-sectional view illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, similarly to the method for manufacturing the semiconductor light emitting device 300 according to the third embodiment, the steps shown in FIGS. 2A to 3B and FIGS. 8A to 8C are performed.

  Next, as shown in FIG. 11, a resin layer 41 is formed on the resin layers 31 and 32. The resin layer 41 is formed in a convex lens shape in which a region directly above the resin layer 32 has a convex surface facing upward. Thereafter, as shown in FIG. 10, the resin layers 31, 32, and 41 are divided at a predetermined interval, and are separated into individual semiconductor light emitting devices 400 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 400 is manufactured by performing the steps shown in FIGS. 2A to 3B, FIGS. 8A to 8C, and FIG.

Next, effects of the light emitting device 400 according to the present embodiment will be described.
According to the present embodiment, the light emitted from the chip 91 through the resin layer 32 can be condensed directly upward by the resin layer 41, so that the orientation is improved. The effects other than the above are the same as those of the third embodiment.

(Fifth embodiment)
Next, a fifth embodiment will be described.
FIG. 12 is a cross-sectional view illustrating a semiconductor light emitting device according to the fifth embodiment.
As shown in FIG. 12, in the semiconductor light emitting device 500 according to this embodiment, wirings 10 a, 10 b, and 10 c are provided on the substrate 10. Bumps 11 are provided on the wiring 10a. Bumps 12 are provided on the wiring 10b, and bumps 51 (third connection members) are provided on the wiring 10c. A conductive portion 52 is provided on the bump 51. A rectifying unit 53 is formed on the conductive unit 52. The rectifying unit 53 includes a p-type semiconductor unit 54 and an n-type semiconductor unit 55. The lower surface of the semiconductor unit 55 is connected to the conductive unit 52, and at least a part of the upper surface and the side surface is covered with the semiconductor unit 54. Further, a part of the side surface of the semiconductor layer 19 is covered with the electrode portion 14. In this case, the electrode part 14 is L-shaped, for example. The electrode part 14 is connected to the semiconductor part 54. In the height direction, the upper surface of the conductive portion 52 is at substantially the same height as the surface connected to the semiconductor portion 54 of the electrode portion 14. The other configuration is the same as that of the semiconductor light emitting device 100 according to the first embodiment described above.

  In this case, the semiconductor unit 54 of the rectifying unit 53 is partly in contact with the upper surface of the electrode unit 14. The electrode portions 13 and 14, the conductive portion 52, the reflection portion 15, the semiconductor layer 16, the light emitting layer 17, the reflection portion 18, the semiconductor layer 19, and the rectification portion 53 are included in the chip 93. Further, the bumps 11, 12, 51 and the chip 93 are included in the structure body 94.

Next, a method for manufacturing the semiconductor light emitting device according to this embodiment will be described.
13A to 13D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, as shown in FIG. 13A, an impurity serving as an acceptor is selectively ion-implanted into a portion including the upper surface of a p-type semiconductor substrate 50 using a photoresist or the like as a mask, thereby forming an n-type semiconductor. A semiconductor portion 55 (first semiconductor region) is formed. Thereafter, the mask is removed. Then, the n-type semiconductor layer 19, the light emitting layer 17, and the p-type semiconductor layer 16 are formed in this order on the semiconductor substrate 50 and the semiconductor portion 55. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are formed by a film formation method such as epitaxial growth. In addition, the reflective portion 15 is formed on the semiconductor layer 16.

  Next, as shown in FIG. 13B, the semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 on the semiconductor portion 55 and the semiconductor layer 19, the light emitting layer 17 and the semiconductor layer 16 on the semiconductor substrate 50 in the periphery thereof. Remove some. Thereby, the upper surface of the semiconductor part 55 and the upper surface of the semiconductor substrate 50 around it are also exposed. At this time, a part of the upper surface of the semiconductor layer 19 is also exposed. Then, the reflection portion 18 is formed on the exposed surface of the semiconductor layer 19.

  Next, as shown in FIG. 13C, the conductive portion 52 is formed on the semiconductor portion 55, and the electrode portion 14 is formed on the exposed surface of the semiconductor substrate 50 and the reflective portion 18. Further, the electrode part 13 is formed on the reflection part 15. In this case, the electrode portions 13 and 14, the conductive portion 52, the reflective portion 15, the semiconductor layer 16, the light emitting layer 17, the reflective portion 18, the semiconductor layer 19, the semiconductor portion 55, and a part 50 (54) of the semiconductor substrate (second semiconductor) Area) is included in the chip 93.

  Next, as shown in FIG. 13D, a substrate 10 provided with wirings 10a, 10b and 10c is prepared. Bumps 11 are formed on the wiring 10a. Bumps 12 are formed on the wiring 10b. Bumps 51 are formed on the wiring 10c. Then, the chip 93 together with the semiconductor substrate 50 is flip-chip bonded (FCB) to the substrate 10 via the bumps 11, 12, 51. In this case, the bump 11 is brought into contact with the electrode portion 13 of the chip 93 and the bump 12 is brought into contact with the electrode portion 14. Further, the bump 51 is brought into contact with the conductive portion 52. That is, the chip 93 formed on the semiconductor substrate 50 is turned upside down together with the semiconductor substrate 50 and bonded onto the substrate 10 via the bumps 11, 12, 51. As a result, the bumps 11, 12, 51 and the chip 93 form a structure 94. A plurality of structures are formed on the substrate 10 by bonding a plurality of chips 93. The chip 93 may be joined to the substrate 10 with a conductive adhesive such as solder or silver paste.

  Next, as shown in FIG. 14A, the semiconductor substrate 50 is removed from the chip 93 while leaving a part 50 (54) of the semiconductor substrate. In this case, a portion of the semiconductor substrate 50 that contacts the electrode portion 14 and covers the semiconductor portion 55 remains. Thereby, the remaining portion of the semiconductor substrate 50 becomes the semiconductor portion 54.

  Next, as illustrated in FIG. 14B, a resin layer 81 that covers the entire structure 94 is formed on the semiconductor substrate 10. In the resin layer 81, the phosphor 81a is dispersed. Thereafter, as shown in FIG. 12, the resin layer 81 and the substrate 10 are divided at a predetermined interval, and the semiconductor light emitting device 500 including a predetermined number of structures 94 is singulated. As described above, the semiconductor light emitting device 500 is manufactured through the steps shown in FIGS. 13A to 14B.

Next, the effect of this embodiment will be described.
In the semiconductor light emitting device 500 according to the present embodiment, the rectifying unit 53 is included in the chip 93. Thereby, the semiconductor light-emitting device 500 can be protected from an overvoltage. Further, the semiconductor light emitting device 500 can be protected from overvoltage without providing a rectifier such as a Zener diode and a wiring for connecting the rectifier to the chip 93 outside the chip. Thereby, size reduction of an apparatus can be achieved. The effects other than the above are the same as those in the first embodiment.

(Sixth embodiment)
Next, a sixth embodiment will be described.
FIG. 15 is a cross-sectional view illustrating a semiconductor light emitting device according to this embodiment.
As shown in FIG. 15, the semiconductor light emitting device 600 according to the present embodiment is provided with a reflecting portion 61 that covers the upper surface and side surfaces of the rectifying portion 53. The reflection part 61 contains a material with high reflectivity, such as aluminum and silver, for example. Other configurations are the same as those of the semiconductor light emitting device 500 according to the fifth embodiment described above.

Next, a method for manufacturing the semiconductor light emitting device 600 according to this embodiment will be described.
FIG. 16 is a process cross-sectional view illustrating the manufacturing method of this embodiment.
In the method for manufacturing the semiconductor light emitting device 600 according to this embodiment, first, the steps shown in FIGS. 13A to 14A are performed as in the fifth embodiment.
Next, as shown in FIG. 16A, the upper surface and the side surface of the rectifying unit 53 are covered with a reflecting unit 61. The reflection part 61 is formed using a material with high reflectivity, such as aluminum and silver, for example.

Next, as shown in FIG. 16B, a resin layer 81 that covers the structure 94 is formed. In the resin layer 81, the phosphor 81a is dispersed. Thereafter, as shown in FIG. 15, the resin layer 81 is divided at a predetermined interval, and is singulated as a semiconductor light emitting device 600 including a predetermined number of structures 94.
As described above, the semiconductor light emitting device 600 is manufactured by the steps shown in FIGS. 13A to 14A, FIGS. 16A and 16B.

Next, the effect of this embodiment will be described.
In the present embodiment, the side surface and the upper surface of the rectifying unit 53 in the semiconductor light emitting device 600 are covered with the reflecting unit 61. Thereby, when the light reflectivity of the rectifying unit 53 is low, the light extraction efficiency is improved. The effects other than the above are the same as those of the semiconductor light emitting device 500 according to the fifth embodiment described above.

  In the above-described embodiments, the first conductivity type is p-type and the second conductivity type is n-type. Moreover, in the 1st-4th embodiment mentioned above, it is also possible to replace and carry out both conductivity types.

  According to the embodiment described above, a semiconductor light emitting device with high light extraction efficiency and a method for manufacturing the same can be realized.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and the equivalents thereof. Further, the above-described embodiments can be implemented in combination with each other.

  100, 200, 300, 400, 500, 600: Semiconductor light emitting device, 10, 70: Substrate, 10a, 10b, 10c: Wiring, 11, 12, 51: Bump, 13, 14: Electrode part, 52: Conductive part, 15, 18, 61: Reflector, 16, 19: Semiconductor layer, 17: Light emitting layer, 91, 93: Chip, 92, 94: Structure, 81, 21, 22: Resin layer, 53: Rectifier, 54, 55: Semiconductor part, 50: Semiconductor substrate

Claims (14)

A substrate having light reflectivity;
A first conductive member;
A second conductive member;
A first semiconductor layer provided on the substrate via the first conductive member;
A second semiconductor layer provided on the substrate via the second conductive member and positioned between the substrate and the first semiconductor layer;
A light emitting layer provided between a part of the first semiconductor layer and the second semiconductor layer;
A semiconductor light emitting device comprising: The first conductive member is a first electrode portion;
The semiconductor light emitting device according to claim 1, wherein the second conductive member is a second electrode portion. The first conductive member further includes a first wiring,
The semiconductor light emitting device according to claim 2, wherein the second conductive member further includes a second wiring. The first conductive member further includes a first bump,
The semiconductor light emitting device according to claim 2, wherein the second conductive member further includes a second bump.   The semiconductor light emitting device according to claim 2, wherein the first wiring and the second wiring are provided on the substrate.   The first semiconductor layer is electrically connected to the first wiring via the first bump, and the second semiconductor layer is electrically connected to the second wiring via the second bump. The semiconductor light-emitting device according to claim 4 or 5.   The semiconductor light emitting device according to claim 2, further comprising a first reflecting portion between the first electrode portion and the first semiconductor layer.   The semiconductor light-emitting device according to claim 2, further comprising a second reflecting portion between the second electrode portion and the second semiconductor layer. A conductive portion provided on the substrate;
A rectifying unit provided on the conductive part and connected to the first conductive member and the conductive part;
A third reflecting portion covering the rectifying portion;
Further equipped with,
The semiconductor light-emitting device according to claim 1. A first resin layer provided on the first semiconductor layer;
A second resin layer having light reflectivity provided on the substrate;
The semiconductor light-emitting device according to claim 1, further comprising: A light-transmitting third resin layer provided on the first resin layer and the second resin layer;
The semiconductor light emitting device according to claim 10, wherein a surface of the first resin layer that faces the third resin layer is a concave curved surface. Forming a first semiconductor layer of a first conductivity type on a first substrate;
Forming a light emitting layer on the first semiconductor layer;
Forming a second semiconductor layer of a second conductivity type on the light emitting layer;
Forming a reflective portion on the second semiconductor layer;
Removing a part of the reflection part, a part of the second semiconductor layer, and a part of the reflection part on the first semiconductor layer, thereby exposing a part of the upper surface of the first semiconductor layer; ,
Forming a first electrode portion on an exposed surface of the first semiconductor layer;
The first electrode portion is connected to the first wiring provided on the second substrate via the first connection member, and the second electrode portion is connected to the second wiring provided on the second substrate via the second connection member. An electrode connection process for connecting
Removing the first substrate;
Forming a first resin layer on the second substrate;
A method for manufacturing a semiconductor light emitting device comprising: A first semiconductor layer of a first conductivity type is formed on the first semiconductor region and the second semiconductor region of a first substrate including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. Forming, and
Forming a light emitting layer on the first semiconductor layer;
Forming a second semiconductor layer of a second conductivity type on the light emitting layer;
Forming a reflective portion on the second semiconductor layer;
By removing a part of the reflective part, a part of the second semiconductor layer, a part of the light emitting layer, and a part of the first semiconductor layer, the upper surface of the second semiconductor region, the second semiconductor region Exposing a part of the upper surface of the first substrate and the upper surface of the first substrate;
Forming a first electrode portion on an exposed surface of the first substrate and an exposed surface of the first semiconductor layer;
Forming a second electrode portion on the reflective portion;
Forming a conductive portion on the first semiconductor region;
The first electrode portion is connected to a first wiring provided on the second substrate via a first connection member, and the second wiring provided on the second substrate is connected to the first wiring via a second connection member. An electrode connection step of connecting two electrode portions and connecting the conductive portion to a third wiring provided on the second substrate via a third connection member;
Removing the other part of the first substrate while leaving at least a part of the first semiconductor region and the second semiconductor region covering the first semiconductor region;
Forming a first resin layer on the second substrate;
A method for manufacturing a semiconductor light emitting device comprising:   14. The method according to claim 12, further comprising a step of forming a second resin layer including a reflective material on the second substrate after the electrode connecting step and before the step of removing the first substrate. The manufacturing method of the semiconductor light-emitting device of description.

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