JP2017050301A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving uniformity of light emission.SOLUTION: A light-emitting device comprises a semiconductor layer, an intermediate semiconductor layer, a conductive layer and a connection part. A first conductivity-type semiconductor layer includes a side in a first direction and a side in a second direction. The first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer are connected by the connection part. The conductive layer connected to the first conductivity-type semiconductor layer includes an extension part extending in the first direction or the second direction.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a light emitting device.

  In a light emitting device using a nitride semiconductor or the like, uniform light emission is required.

Japanese Patent No. 499722

  Embodiments of the present invention provide a light emitting device capable of improving the uniformity of light emission.

  According to the embodiment of the present invention, the light emitting device includes the first to sixth semiconductor layers, the first to third intermediate semiconductor layers, the first to sixth conductive layers, the first connection portion, and the second connection. Part. The first semiconductor layer is separated from the base body in the separation direction and has a first conductivity type. The first semiconductor layer includes a first side extending along a first direction intersecting the separation direction, and a second side extending along a second direction intersecting the separation direction and inclined with respect to the first direction. A third side spaced apart from the first side in the second direction and extending along the first direction; a fourth side spaced apart from the second side in the first direction and extending along the second direction; ,including. The second semiconductor layer is provided between the base and the first semiconductor layer and has a second conductivity type. The first intermediate semiconductor layer is provided between the first semiconductor layer and the second semiconductor layer. The first conductive layer includes a first extension extending along one of the first direction and the second direction, and is electrically connected to the first semiconductor layer. The second conductive layer is provided between the base and the second semiconductor layer, and is electrically connected to the second semiconductor layer. The third semiconductor layer is of the first conductivity type along with the first semiconductor layer in a direction that is separated from the base body in the separation direction and intersects the separation direction. The third semiconductor layer includes a fifth side extending along the second direction, and a sixth side extending along a third direction that intersects the separation direction and is inclined with respect to the first direction and the second direction. A side that is spaced apart from the fifth side in the third direction and extends along the second direction; and an eighth side that is separated from the sixth side in the second direction and extends along the third direction. And edges. The fourth semiconductor layer is provided between the base and the third semiconductor layer and has the second conductivity type. The second intermediate semiconductor layer is provided between the third semiconductor layer and the fourth semiconductor layer. The third conductive layer includes a second extension extending along one of the second direction and the third direction, and is electrically connected to the third semiconductor layer. The fourth conductive layer is provided between the base and the fourth semiconductor layer and is electrically connected to the fourth semiconductor layer. The fifth semiconductor layer is of the first conductivity type along with the first semiconductor layer in a direction that is separated from the base in the separation direction and intersects the separation direction. The fifth semiconductor layer includes a ninth side extending along the third direction, a tenth side extending along the first direction, and spaced apart from the ninth side in the first direction in the third direction. An eleventh side extending along the third direction, and a twelfth side spaced apart from the tenth side in the third direction and extending along the first direction. The sixth semiconductor layer is provided between the base and the fifth semiconductor layer and has the second conductivity type. The third intermediate semiconductor layer is provided between the fifth semiconductor layer and the sixth semiconductor layer. The fifth conductive layer includes a third extension extending along one of the first direction and the third direction, and is electrically connected to the fifth semiconductor layer. The sixth conductive layer is provided between the base and the sixth semiconductor layer and is electrically connected to the sixth semiconductor layer. The first connection portion electrically connects the first conductive layer and the fourth conductive layer. The second connection part electrically connects the third conductive layer and the sixth conductive layer.

FIG. 1A to FIG. 1C are schematic views illustrating the light emitting device according to the first embodiment. FIG. 2A to FIG. 2D are schematic views illustrating the light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment. FIG. 6 is a schematic plan view illustrating another light emitting device according to the first embodiment. FIG. 6A to FIG. 6C are schematic plan views illustrating another light emitting device according to the first embodiment. FIG. 7A and FIG. 7B are schematic views illustrating the light emitting device according to the second embodiment. FIG. 6 is a schematic cross-sectional view illustrating another light emitting device according to the second embodiment. FIG. 6 is a schematic cross-sectional view illustrating another light emitting device according to the second embodiment. FIG. 6 is a schematic plan view illustrating another light emitting device according to the second embodiment. FIG. 11A to FIG. 11C are schematic plan views illustrating another light emitting device according to the second embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A to FIG. 1C are schematic views illustrating the light emitting device according to the first embodiment. FIG. 1A is a perspective view. FIG. 1B is a plan view seen from the arrow AR in FIG. FIG. 1C is a cross-sectional view taken along line A1-A2 of FIG.

  As illustrated in FIG. 1A, the light emitting device 111 according to the embodiment includes, for example, a light emitting unit 71 and a wavelength conversion layer 72.

  The stacking direction of the light emitting unit 71 and the wavelength conversion layer 72 is taken as the Z-axis direction. A direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  The outer edge 72r of the wavelength conversion layer 72 in the XY plane is, for example, circular. For example, the wavelength conversion layer 72 has a disk shape.

  The outer edge 71r of the light emitting unit 71 in the XY plane is, for example, a hexagon. The light emitting portion 71 has a low (thin) hexagonal column shape.

  A semiconductor light emitting element (for example, LED) is used for the light emitting unit 71. Light is emitted from the light emitting unit 71. The light enters the wavelength conversion layer 72. The wavelength of light is converted in the wavelength conversion layer 72. The light that has passed through the wavelength conversion layer 72 (that is, the light emitted from the light emitting device 111) is substantially white, for example. In the embodiment, the color of the light that has passed through the wavelength conversion layer 72 is arbitrary.

  Hereinafter, an example of the light emitting unit 71 will be described.

  As shown in FIGS. 1B and 1C, the light emitting unit 71 (that is, the light emitting device 111) includes a base 51, first to sixth semiconductor layers 11 to 16, and first to third intermediates. The semiconductor layers IL1 to IL3, the first to sixth conductive layers 11cl to 16cl, the first connection portion CP1, and the second connection portion CP2 are included.

  The first semiconductor layer 11 is separated from the base body 51 in one direction (separation direction). The separation direction is the Z-axis direction.

  The first semiconductor layer 11 is the first conductivity type. The first conductivity type is, for example, one of n-type and p-type. The second conductivity type described later is the other of the n-type and the p-type. Hereinafter, the first conductivity type is n-type, and the second conductivity type is p-type.

  The first semiconductor layer 11 includes first to fourth sides s1 to s4. The first side s1 extends along the first direction D1. The first direction D1 intersects with the separation direction (Z-axis direction). In this example, the first direction D1 is along the X-axis direction.

  The second side s2 extends along the second direction D2. The second direction D2 intersects the separation direction and is inclined with respect to the first direction D1. For example, the angle between the second direction D2 and the first direction D1 is substantially 60 degrees. The third side s3 is separated from the first side s1 in the second direction D2, and extends along the first direction D1. The fourth side s4 is separated from the second side s2 in the first direction D1, and extends along the second direction D2.

  The planar shape of the first semiconductor layer 11 is substantially a rhombus, for example.

  The second semiconductor layer 12 is provided between the base 51 and the first semiconductor layer 11. The second semiconductor layer is of the second conductivity type. The first intermediate semiconductor layer IL1 is provided between the first semiconductor layer 11 and the second semiconductor layer 12.

  The first conductive layer 11cl includes a first extension part ep1. The first extending part ep1 extends along one of the first direction D1 and the second direction D2. In this example, the first extending portion ep1 extends along the first direction D1. The first conductive layer 11cl is electrically connected to the first semiconductor layer 11.

  The state where the first conductor and the second conductor are electrically connected includes the state where the first conductor is in direct contact with the second conductor. The state in which the first conductor and the second conductor are electrically connected includes a state in which a current flows between the first conductor and the second conductor. The state in which the first conductor and the second conductor are electrically connected includes a state in which a current flows between the first conductor and the second conductor via the third conductor. The third conductor may include a semiconductor. That is, the state in which the first conductor and the second conductor are electrically connected includes a state in which a current flows between the first conductor and the second conductor through the semiconductor.

  The second conductive layer 12cl is provided between the base 51 and the second semiconductor layer 12. The second conductive layer 12cl is electrically connected to the second semiconductor layer 12.

  The third semiconductor layer 13 is separated from the base body 51 in the separation direction. The third semiconductor layer 13 is aligned with the first semiconductor layer 11 in a direction intersecting with the separation direction. The third semiconductor layer 13 is the first conductivity type. The third semiconductor layer 13 includes fifth to eighth sides s5 to s8.

  The fifth side s5 extends along the second direction D2. In this example, the fifth side s5 is along the second side s2.

  The sixth side s6 extends along the third direction D3. The third direction D3 intersects the separation direction and is inclined with respect to the first direction D1 and the second direction D2. The angle between the third direction D3 and the first direction D1 is, for example, substantially 60 degrees. The angle between the third direction D3 and the second direction D2 is substantially 60 degrees.

  The seventh side s7 is separated from the fifth side s5 in the third direction D3. The seventh side s7 extends along the second direction D2. The eighth side s8 is separated from the sixth side s6 in the second direction D2. The eighth side extends along the third direction D3.

  The planar shape of the third semiconductor layer 13 is substantially a rhombus, for example.

  The fourth semiconductor layer 14 is provided between the base 51 and the third semiconductor layer 13. The fourth semiconductor layer 14 is of the second conductivity type. The second intermediate semiconductor layer IL2 is provided between the third semiconductor layer 13 and the fourth semiconductor layer 14.

  The third conductive layer 13cl includes a second extending part ep2. The second extending part ep2 extends along one of the second direction D2 and the third direction. In this example, the second extending part ep2 extends along the second direction D2. The third conductive layer 13cl is electrically connected to the third semiconductor layer 13.

  The fourth conductive layer 14cl is provided between the base 51 and the fourth semiconductor layer 14. The fourth conductive layer 14cl is electrically connected to the fourth semiconductor layer 14.

  The fifth semiconductor layer 15 is separated from the base body 51 in the separation direction. It is aligned with the first semiconductor layer 11 in a direction crossing the separation direction. The fifth semiconductor layer 15 is the first conductivity type. The fifth semiconductor layer includes ninth to twelfth sides s9 to s12.

  The ninth side s9 extends along the third direction D3. In this example, the ninth side s9 is along the eighth side s8. The tenth side s10 extends along the first direction D1. The eleventh side s11 is separated from the ninth side s9 in the first direction D1, and extends along the third direction D3. The twelfth side s12 is separated from the tenth side s10 in the third direction D3 and extends along the first direction D1. In this example, the twelfth side s12 is along the third side s3.

  The planar shape of the fifth semiconductor layer 15 is substantially a rhombus, for example.

  The sixth semiconductor layer 16 is provided between the base 51 and the fifth semiconductor layer 15. The sixth semiconductor layer 16 is of the second conductivity type. The third intermediate semiconductor layer IL3 is provided between the fifth semiconductor layer 15 and the sixth semiconductor layer 16.

  The fifth conductive layer 15cl includes a third extending part ep3. The third extending part ep3 extends along one of the first direction and the third direction. In this example, the third extending portion ep3 extends along the first direction D1. The fifth conductive layer 15cl is electrically connected to the fifth semiconductor layer 15.

  The sixth conductive layer 16cl is provided between the base 51 and the sixth semiconductor layer 16. The sixth conductive layer 16cl is electrically connected to the sixth semiconductor layer 16.

  The first connection portion CP1 electrically connects the first conductive layer 11cl and the fourth conductive layer 14cl. The second connection portion CP2 electrically connects the third conductive layer 13cl and the sixth conductive layer 16cl.

  The first semiconductor layer 11, the second semiconductor layer 12, and the first intermediate semiconductor layer IL1 are included in the first light emitting layer EU1. The third semiconductor layer 13, the fourth semiconductor layer 14, and the second intermediate semiconductor layer IL2 are included in the second light emitting layer EU2. The fifth semiconductor layer 15, the sixth semiconductor layer 16, and the third intermediate semiconductor layer IL3 are included in the third light emitting layer EU3. These light emitting layers are, for example, LEDs. These light emitting layers are connected in series by the connection portion. The light emitting device 111 (light emitting unit 71) has a multi-junction structure.

  In this example, each of the LEDs is a lateral energization type. That is, the second conductivity type semiconductor layer is disposed between a part of the first conductivity type semiconductor layer and the base 51.

  The first semiconductor layer 11 includes a first region 11a and a second region 11b. The second region 11b is aligned with the first region 11a in a direction intersecting the separation direction. The second semiconductor layer 12 is provided between the base 51 and the second region 11b. The first intermediate semiconductor layer IL1 is provided between the second region 11b and the second semiconductor layer 12. The first extending part ep1 of the first conductive layer 11cl is provided between the base 51 and the first region 11a.

  The third semiconductor layer 13 includes a third region 13a and a fourth region 13b. The fourth region 13b is aligned with the third region 13a in a direction intersecting with the separation direction. The fourth semiconductor layer 14 is provided between the base body 51 and the fourth region 13b. The second intermediate semiconductor layer IL2 is provided between the fourth region 13b and the fourth semiconductor layer 14. The second extending portion ep2 of the third conductive layer 13cl is provided between the base 51 and the third region 13a.

  The fifth semiconductor layer 15 includes a fifth region 15a and a sixth region 15b. The sixth region 15b is aligned with the fifth region 15a in the direction intersecting the separation direction. The sixth semiconductor layer 16 is provided between the base 51 and the sixth region 15b. The third intermediate semiconductor layer IL3 is provided between the sixth region 15b and the sixth semiconductor layer 16. The third extending portion ep3 of the fifth conductive layer 15cl is provided between the base 51 and the fifth region 15b.

  As illustrated in FIG. 1C, the connection portion is provided in a region between a plurality of light emitting layers (LEDs). At least a part of the connection portion intersects the semiconductor layer of the first conductivity type in the XY plane.

  For example, at least a part of the first connection portion CP1 overlaps the first semiconductor layer 11 in a direction perpendicular to the separation direction (Z-axis direction). At least a part of the second connection portion CP2 overlaps the third semiconductor layer 13 in a direction perpendicular to the separation direction.

  In this example, the height of the connection portion is lower than the height of the light emitting layer (LED).

  For example, the first semiconductor layer 11 includes a region that does not overlap with the first connection portion CP1 in a direction perpendicular to the separation direction. In the direction perpendicular to the separation direction, the third semiconductor layer 13 includes a region that does not overlap with the second connection portion CP2.

  In this example, the first connection portion CP1 includes a first wiring region CR1, a first counter wiring region CS1, and a first intermediate wiring region CM1. The first wiring region CR1 is electrically connected to the first conductive layer 11cl. The first counter wiring region CS1 is electrically connected to the fourth conductive layer 14cl. The first intermediate wiring region CM1 is electrically connected to the first wiring region CR1 and the first counter wiring region CS1.

  In this example, at least a part of the first wiring region CR1 is arranged between a part of the first intermediate wiring region CM1 and the base body 51. At least a part of the first counter wiring area CS1 is arranged between another part of the first intermediate wiring area CM1 and the base body 51.

  In the embodiment, the first wiring region CR1 may be continuous with the first conductive layer 11cl. The material of the first wiring region CR1 may be the same as the material of the first conductive layer 11cl. The first counter wiring region CS1 may be continuous with the fourth conductive layer 14cl. The material of the first counter wiring region CS1 may be the same as the material of the fourth conductive layer 14cl.

  Similarly, the second connection portion CP2 includes a second wiring region CR2, a second counter wiring region CS2, and a second intermediate wiring region CM2. The second wiring region CR2 is electrically connected to the third conductive layer 13cl. The second counter wiring region CS2 is electrically connected to the sixth conductive layer 16cl. The second intermediate wiring region CM2 is electrically connected to the second wiring region CR2 and the second counter wiring region CS2.

  In this example, at least a part of the second wiring region CR2 is arranged between a part of the second intermediate wiring region CM2 and the base body 51. At least a part of the second counter wiring area CS2 is disposed between another part of the second intermediate wiring area CM2 and the base body 51.

  In the embodiment, the second wiring region CR2 may be continuous with the third conductive layer 13cl. The material of the second wiring region CR2 may be the same as the material of the third conductive layer 13cl. The second counter wiring region CS2 may be continuous with the sixth conductive layer 16cl. The material of the second counter wiring region CS2 may be the same as the material of the sixth conductive layer 16cl.

  In this example, the light emitting device 111 (light emitting unit 71) further includes a first electrode pd1 and a second electrode pd2. These electrodes are used as pads for supplying current.

  The first electrode pd1 is electrically connected to the fifth semiconductor layer 15. The second electrode pd2 is electrically connected to the second semiconductor layer 12. At least a part of the first electrode pd1 overlaps the fifth semiconductor layer 15 in a direction perpendicular to the separation direction. At least a part of the second electrode pd <b> 2 overlaps the first semiconductor layer 11 in the direction perpendicular to the separation direction.

  In this example, a third wiring region CR3 is provided. The third wiring region CR3 electrically connects the third conductive layer 15cl and the first electrode pd1. In this example, a counter wiring layer CL1 is provided. The counter wiring layer CL1 electrically connects the second conductive layer 12cl and the second electrode pd2.

  An insulating layer 61 is provided between the counter wiring layer CL1 and the first semiconductor layer 11. An insulating layer 62 is provided between the first counter wiring region CS1 and the third semiconductor layer 13. An insulating layer 63 is provided between the second counter wiring region CS2 and the fifth semiconductor layer 15.

  Thus, in the embodiment, a plurality of light emitting layers (LDEs) are provided on the base 51, and the first electrode pd <b> 1 and the second electrode pd <b> 2 are provided on the base 51. For example, the wiring WR1 is connected to the first electrode pd1. For example, the wiring WR2 is connected to the second electrode pd2.

  A voltage is applied between the first electrode pd1 and the second electrode pd2. Thereby, a current is supplied to the first to third light emitting layers EU1 to EU3, and light is emitted from these light emitting layers. The light is emitted to the outside of the semiconductor layer in a direction (separation direction) from the base 51 toward the semiconductor layer. The light is emitted to the outside through the wavelength conversion layer 72.

  Irregularities are provided on the surface of the semiconductor layer of the first conductivity type. For example, unevenness 11 dp is provided on the surface of the first semiconductor layer 11. Unevenness 13 dp is provided on the surface of the third semiconductor layer 13. The surface of the fifth semiconductor layer 15 is provided with unevenness 15 dp. Due to these irregularities, high light extraction efficiency can be obtained.

  For example, the base 51 is disposed on a mounting surface of a mounting member (not shown).

  In this example, a bonding layer 52 is provided on the substrate 51, and an insulating layer 81 is provided on the bonding layer 52. Over the insulating layer 81, a wiring region, a counter wiring region, a conductive layer, a semiconductor layer, and an electrode are provided. A wavelength conversion layer 72 is provided thereon.

  In the present embodiment, extended portions (first to third extended portions ep1 to ep3, etc.) are provided. Thereby, the current spreads in the XY plane. Thereby, the uniformity of light can be made high.

  As shown in FIG. 1C, in this example, the first conductive layer 11cl further includes a first connection part cp1, and the first connection part cp1 is, for example, the other of the first direction D1 and the second direction D2. Extending along. In this example, the first connecting portion cp1 extends along the second direction D2. A plurality of first extending portions ep1 are provided. One end of each of the plurality of first extending portions ep1 is connected to the first connecting portion cp1.

  In this example, the third conductive layer 13cl further includes a second connection part cp2. The second connection part cp2 extends, for example, along the other of the second direction D2 and the third direction D3. In this example, the second connecting portion cp2 extends along the third direction D3. A plurality of second extending portions ep2 are provided. One end of each of the plurality of second extending portions ep2 is coupled to the second coupling portion cp2.

  In this example, the fifth conductive layer 15cl further includes a third connection part cp3. The third connection part cp3 extends, for example, along the other of the first direction D1 and the third direction D3. In this example, the third connecting portion cp3 extends along the third direction D3. A plurality of third extending portions ep3 are provided. One end of each of the plurality of third extending portions ep2 is connected to the third connecting portion cp3.

  In this example, opposing extension portions are provided between the plurality of extension portions as follows.

  The second conductive layer 12cl includes a first opposing extension portion eq1. The first opposing extension portion eq1 extends along one of the first direction D1 and the second direction D2 (in this example, the first direction D1). The first opposing extension portion eq1 is located between two of the plurality of first extension portions ep1.

  The fourth conductive layer 14cl includes a second opposing extension portion eq2. The second opposing extending portion eq2 extends along one of the second direction D2 and the third direction D3 (in this example, the third direction D3). The second opposing extension part eq2 is located between two of the plurality of second extension parts ep2.

  The sixth conductive layer 16cl includes a third opposing extension portion eq3. The third opposing extension portion eq3 extends along one of the first direction D1 and the third direction D3 (in this example, the first direction D1). The third opposing extension part eq3 is located between two of the plurality of third extension parts ep3.

In this example,
The second conductive layer 12cl further includes a first opposing coupling portion cq1, and the first opposing coupling portion cq1 extends, for example, along the other of the first direction D1 and the second direction D2. In this example, the first opposing connection portion cq1 extends along the second direction D2. A plurality of first opposing extending portions eq1 are provided. One end of each of the plurality of first opposing extending portions eq1 is connected to the first opposing connecting portion cq1.

  The fourth conductive layer 14cl further includes a second opposing coupling portion cq2. The second opposing coupling portion cq2 extends, for example, along the other of the second direction D2 and the third direction D3. In this example, the second opposing connection portion cq2 extends along the third direction D3. A plurality of second opposing extending portions eq2 are provided. One end of each of the plurality of second opposing extending portions eq2 is connected to the second opposing connecting portion cq2.

  The sixth conductive layer 16cl further includes a third opposing connection portion cq3. The third opposing connection portion cq3 extends, for example, along the other of the first direction D1 and the third direction D3. In this example, the third opposing connection portion cq3 extends along the third direction D3. A plurality of third opposing extension portions eq3 are provided. One end of each of the plurality of third opposing extending portions eq3 is connected to the third opposing connecting portion cq3.

  That is, when the conductive layer electrically connected to the first conductivity type and the conductive layer electrically connected to the second conductivity type are projected onto the XY plane, a comb-teeth shape is obtained. Thereby, the current becomes more uniform in the XY plane.

  In the present embodiment, a plurality of light emitting layers are provided. The sides of the semiconductor layers included in the plurality of light emitting layers are arranged in a hexagon (for example, a regular hexagon).

  For example, in this example, each of the first side s1, the fourth side s4, the sixth side s6, the seventh side s7, the tenth side s10, and the eleventh side s11 is along six sides of a regular hexagon. The fifth side s5 is along the second side s2, the ninth side s9 is along the eighth side s8, and the twelfth side s12 is along the third side s3. The planar shape of the light emitting unit 71 is a hexagon (for example, a regular hexagon).

  For example, the angle between the first direction D1 and the second direction D2 is, for example, not less than 58 degrees and not more than 62 degrees. The angle between the first direction D1 and the third direction D3 is, for example, not less than 58 degrees and not more than 62 degrees. The angle between the second direction D2 and the third direction D3 is, for example, not less than 58 degrees and not more than 62 degrees. For example, the angle between the first direction D1 and the second direction D2 may be, for example, 59 degrees or more and 61 degrees or less. The angle between the first direction D1 and the third direction D3 may be, for example, 59 degrees or more and 61 degrees or less. The angle between the second direction D2 and the third direction D3 may be, for example, 59 degrees or more and 61 degrees or less. The planar shape of the light emitting portion 71 is substantially a hexagon (for example, a regular hexagon). Uniform light emission is easy to obtain due to the hexagonal shape.

  A wavelength conversion layer 72 is provided. In the separating direction (Z-axis direction), the first to sixth semiconductor layers 11 to 16 and the first to third intermediate semiconductor layers IL1 to IL3 are disposed between the base 51 and the wavelength conversion layer 72. The wavelength conversion layer 72 absorbs at least part of light (emitted light) emitted from these semiconductor layers and emits another light (converted light). The wavelength of the converted light is different from the wavelength of the emitted light. The emitted light is, for example, blue, and the converted light is yellow. A combined light of these lights is obtained. The color of the synthesized light is, for example, substantially white.

  The wavelength conversion layer 72 includes, for example, a plurality of phosphors (wavelength conversion particles) and a resin portion. The resin portion is provided around at least a part of the plurality of phosphors.

  An outer edge 72r of the wavelength conversion layer 72 in a plane (for example, an XY plane) intersecting with the separation direction is substantially circular. On the other hand, the outer edge 72 (outer shape including the side included in the semiconductor layer) of the light emitting unit 71 is a hexagon (for example, a regular hexagon). As described above, the six sides of the hexagon (for example, a regular hexagon) are, for example, the first side s1, the fourth side s4, the sixth side s6, the seventh side s7, the tenth side s10, and the eleventh side s11. Along. The outer edge 72r of the wavelength conversion layer 72 is located around this hexagon in a plane (XY plane) orthogonal to the separation direction.

  By providing the hexagonal light-emitting portion 71 corresponding to the circular wavelength conversion layer 72, a region where the wavelength conversion layer 72 and the light-emitting portion 71 overlap each other can be enlarged. Thereby, the loss of light can be reduced. The light utilization efficiency is increased. And the uniformity in the surface of light increases by making circular and a hexagon correspond. In the light emitting portion 71 formed by combining a plurality of light emitting layers, the uniformity is high and the efficiency is high.

  Further, as described above, the extending portion is provided in the conductive layer. This spreads the current. High uniformity can be obtained even in one light emitting layer.

  The drive voltage can be increased by connecting a plurality of light emitting layers in series. This increases the efficiency of the power supply circuit. The configuration of the power supply circuit is simplified.

  Thus, in the embodiment, a plurality of elements (light emitting layers) are connected in series on a circular mounting surface. This enables high-efficiency driving at a high voltage. The external shape of a some element (light emitting layer) is a hexagon (for example, regular hexagon). On this, a wavelength conversion layer 72 is provided. The wavelength conversion layer 72 covers a plurality of light emitting layers. The back surface shape of the wavelength conversion layer 72 is circular.

  In the embodiment, a hexagonal (for example, regular hexagonal) light emitting unit 71 including a plurality of elements is disposed on a circular mounting surface. Thereby, the ratio of the area of the light emission part 71 with respect to the area of a mounting surface can be made high. Luminous efficiency is improved.

  In general, the light emitting part (LED chip) is substantially a rectangular parallelepiped. The planar shape is a quadrangle. When such a square LED chip is used, the uniformity of light is low in the plane. In the embodiment, since the light emitting unit 71 is a hexagon (for example, a regular hexagon), the light uniformity is high. The light distribution is close to a circle. For this reason, optical design becomes easy. Optical loss is reduced.

  A plurality of light emitting layers are connected in series. The driving voltage can be controlled by the number of light emitting layers. The external voltage may be high. This simplifies the drive circuit.

  Since the plurality of light emitting layers are connected in series, the current can be kept low even when the input power is high. Power loss due to element resistance can be suppressed. A light emitting portion 71 having a hexagonal shape (for example, a regular hexagonal shape) is provided on the circular mounting surface. That is, a hexagonal (for example, regular hexagonal) light-emitting portion 71 is provided for the circular wavelength conversion layer 72. Thereby, the light emission area of the light emission part 71 can be enlarged. The current density is reduced and the light emission efficiency is improved.

  The ratio of the area of the light emitting unit 71 to the mounting surface is high. This ratio is, for example, 70% or more. Thereby, the optical loss is small regardless of the reflectance of the mounting surface.

  The contact area between the light emitting portion 71 and the mounting surface is large. For this reason, high heat dissipation is obtained.

  In the light emitting unit 71, a plurality of light emitting layers are provided. These light emitting layers are connected by a connecting portion. The connection portion (connection wiring) is provided between the semiconductor layers. The connection portion may not be provided on the upper surface (light extraction surface) of the semiconductor layer. Thereby, it is easy to obtain high light extraction efficiency.

  An interval between the plurality of light emitting layers (for example, an interval between the first semiconductor layer 11 and the third semiconductor layer 13) is, for example, 20 μm or less. Since the interval is narrow, the light emission area can be expanded. Since the distance of the connection portion can be shortened, the element resistance is lowered. The interval may be about 5 μm.

  A hexagonal (for example, regular hexagonal) light emitting portion 71 is formed by the plurality of light emitting layers. That is, the light emitting unit 71 is divided into a plurality of light emitting layers. The number of divisions is, for example, 3, 6, 12, or 24.

  In the embodiment, it is desirable that the areas of the plurality of light emitting layers are substantially equal to each other. Thereby, for example, the maximum value of the light emission efficiency with respect to the input power can be increased. When the areas of the plurality of light emitting layers are substantially equal to each other, the current density becomes uniform. Thereby, for example, reliability can be increased.

  In the embodiment, the areas of the plurality of light emitting layers may be different from each other. In this case, for example, the dependence of the light emission efficiency on the input power can be reduced.

An outline of an example of a method for forming the light emitting portion 71 will be described.
A first conductivity type first semiconductor crystal layer, an intermediate semiconductor crystal layer, and a second conductivity type second semiconductor crystal layer are formed on the growth substrate. At this time, a semiconductor film including a buffer layer may be formed between the growth substrate and the first semiconductor crystal layer. A part of the second semiconductor crystal layer and a part of the intermediate semiconductor crystal layer are removed by etching using a mask. Thus, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are formed. A conductive layer is formed on these semiconductor layers. Insulating layers 61 to 63 are appropriately formed. A conductive film to be a part of the connection portion is formed. An insulating layer 81 is formed, and a first metal layer is further formed.

  On the other hand, a base 51 is prepared. A second metal layer is provided on the base 51. The first metal layer and the second metal layer are joined. Thereby, the bonding layer 52 is formed. The growth substrate is removed by grinding or etching.

  The surface of the layer including the semiconductor layer of the first conductivity type (layer including the buffer layer or the like) is subjected to processing such as etching to form irregularities. Furthermore, it divides | segments into each of several light emitting layers. Thereby, the first to sixth conductive layers 11cl to 16cl are formed, and a plurality of light emitting layers are formed.

  A part of the bottom surface of the separated groove is etched to expose the conductive film which becomes a part of the connection portion, and another conductive film is formed thereon. Thereby, a connection part is formed. The connection portion may be formed simultaneously with the formation of at least one of the first electrode pd1 and the second electrode pd2.

  You may form at least one part of a connection part before said joining. At least a part of the connection part may be continuous with a part of the wiring connected to the semiconductor layer of the first conductivity type. At least a part of the connection part may be continuous with a part of the wiring connected to the semiconductor layer of the second conductivity type.

  The above steps are performed simultaneously in the plurality of light emitting units 71. Then, it is divided into a plurality of light emitting units 71. Thereby, the one light emission part 71 is obtained. A wavelength conversion layer 72 is formed on one light emitting unit 71. Thereby, the light emitting device 111 is formed.

FIG. 2A to FIG. 2D are schematic views illustrating the light emitting device according to the first embodiment. FIG. 2A to FIG. 2C are plan views illustrating a state before division into the plurality of light emitting units 71. FIG.2 (d) is sectional drawing after a parting.
As shown in FIG. 2A, a semiconductor crystal layer 71 s is provided on the layer that becomes the base 51. The semiconductor crystal layer 71 s becomes a plurality of light emitting portions 71. The semiconductor crystal layer 71s includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an intermediate semiconductor layer provided therebetween.

  As shown in FIG. 2B, the semiconductor crystal layer 71s is divided by a dividing line 71d. As a result, a plurality of semiconductor crystal layers 71s are formed. Each of the plurality of semiconductor crystal layers 71 s corresponds to each of the plurality of light emitting units 71.

  As shown in FIG. 2C and FIG. 2D, the base 51 is provided with a receding portion 51 c in the corner portion where the three light emitting portions 71 gather.

  The position of the bottom surface of the retreating part 51c is higher than the position of the bottom surface of the non-retreating part 51b. The thickness of the retreating part 51c is thinner than the thickness of the non-retreating part 51b. The receding portion 51c facilitates the division.

  Hereinafter, an example of the dividing step will be described. The base 51 includes an upper surface on the side of a semiconductor layer (for example, the first semiconductor layer 11) and a lower surface opposite to the upper surface. The lower surface is, for example, the back surface. The semiconductor layer includes a lower surface on the base 51 side and an upper surface opposite to the lower surface. The upper surface of the semiconductor layer is, for example, a front surface.

  In the dividing step, for example, etching is performed from the back surface, and then laser cutting is performed from the front surface. In the dividing step, for example, etching is performed from the back surface, and thereafter, etching is performed from the front surface. In the dividing step, for example, the substrate is divided from the back surface by etching. In the dividing step, for example, half cutting is performed with a laser from the back surface, and then laser cutting is performed from the front surface. In the dividing step, for example, the front surface is divided by a laser. In the dividing step, for example, half cutting may be performed with a laser from the front surface. In the dividing step, the front surface is half-cut with a laser, and then the laser is cut from the back surface.

  In such a dividing step, the provision of the retracted portion 51c facilitates processing. For example, a groove is provided at the apex of the hexagon that is the starting point and the ending point of laser processing. The groove becomes the receding portion 51c. After the cutting, a recess (retracted portion 51c) is formed on the back surface of the base 51 at the tip end (corner portion).

  Thereby, the division | segmentation by laser scribe etc. becomes easy. Light absorption by the base 51 is suppressed by the retreating part 51c. Furthermore, the recess 51c can suppress expansion of a member (such as paste or solder) into an area where mounting is unnecessary.

FIG. 3 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment.
FIG. 3 is a cross-sectional view corresponding to the line A1-A2 of FIG.
In another light emitting device 112 according to this embodiment, the configuration of the connection portion is different from that of the light emitting device 111. Other than this, for example, it is the same as the light emitting device 111. Hereinafter, the connection part in the light emitting device 112 will be described.

  In the light emitting device 112, the first connection portion CP1 includes a first wiring region CR1 and a first counter wiring region CS1. The first wiring region CR1 is electrically connected to the first conductive layer 11cl. The first counter wiring region CS1 is electrically connected to the fourth conductive layer 14cl and the first wiring region CR1. In the separation direction (Z-axis direction), a part of the first counter wiring area CS1 overlaps a part of the first wiring area CR1.

  The second connection portion CP2 includes a second wiring region CR2 and a second counter wiring region CS2. The second wiring region CR2 is electrically connected to the third conductive layer 13cl. The second opposing wiring region CS2 is electrically connected to the sixth conductive layer 16cl and the second wiring region CR2. In the separation direction, a part of the second wiring region CR2 overlaps with a part of the second counter wiring region CS2.

  The light emitting device 112 can also provide a light emitting device capable of improving the uniformity of light emission.

FIG. 4 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment.
FIG. 4 is a cross-sectional view corresponding to the line A1-A2 of FIG.
In another light emitting device 113 according to this embodiment, the configuration of the semiconductor layer, the configuration of the connection portion, and the configuration of the electrodes are different from those of the light emitting device 111. Other than this, for example, it is the same as the light emitting device 111. Hereinafter, the semiconductor layer, the connection portion, and the electrode in the light emitting device 113 will be described.

  The light emitting unit 71 of the light emitting device 113 includes a longitudinal conduction type semiconductor light emitting element. That is, a part of the first semiconductor layer 11 is provided between the first extension part ep1 and the first intermediate semiconductor layer IL1. A part of the third semiconductor layer 13 is provided between the second extension part ep2 and the second intermediate semiconductor layer IL2. A part of the fifth semiconductor layer 15 is provided between the third extension part ep3 and the third intermediate semiconductor layer IL3.

  Another part of the first semiconductor layer 11 is provided between a part of the first connection portion CP1 and the base body 51. Another part of the third semiconductor layer 13 is provided between a part of the second connection portion CP2 and the base body 51.

  The first electrode pd1 is electrically connected to the fifth semiconductor layer 15. The second electrode pd2 is electrically connected to the second semiconductor layer 12. Another part of the fifth semiconductor layer 15 is disposed between the first electrode pd <b> 1 and the base body 51. At least a part of the second electrode pd2 overlaps the first semiconductor layer 11 in a direction perpendicular to the separation direction (Z-axis direction). That is, a semiconductor layer, a conductive layer, and a connection portion are provided on the base 51. Furthermore, an electrode (pad part) is also received on the base 51.

  In this example, a first side surface insulating layer 61s is further provided. The first semiconductor layer 11 includes a first side surface 11s. The first side surface 11s intersects the direction perpendicular to the separation direction. At least a part of the first side surface insulating layer 61s is provided between the first connection portion CP1 and the first side surface 11s.

  Further, a second side surface insulating layer 62s is further provided. The third semiconductor layer 13 includes a second side surface 13s. The second side surface 13s intersects the direction perpendicular to the separation direction. At least a part of the second side surface insulating layer 62s is provided between the second connection portion CP2 and the second side surface 13s.

  The light emitting device 113 can also provide a light emitting device capable of improving the uniformity of light emission.

FIG. 5 is a schematic plan view illustrating another light emitting device according to the first embodiment.
FIG. 5 illustrates a light emitting unit 71 in another light emitting device 114 according to this embodiment.
As shown in FIG. 5, the light emitting device 114 (light emitting unit 71) includes first to twelfth light emitting layers EU1 to EU12. The first to third light emitting layers EU1 to EU3 are the same as those in the light emitting device 111. The fourth to twelfth light emitting layers EU4 to EU12 have a configuration similar to any one of the first to third light emitting layers EU1 to EU3. The first to twelfth light emitting layers EU1 to EU12 are connected in series. Also in the light emitting device 114, the outer shape of the light emitting unit 71 is a hexagon (for example, a regular hexagon). A hexagon is formed by 12 light emitting layers.

  Also in the light emitting device 114, the first electrode pd1 and the second electrode pd2 are provided. A voltage is applied between these electrodes. A current flows between these electrodes. The current flows through the semiconductor layer including the first to twelfth light emitting layers EU1 to EU12 along the current path ICP.

FIG. 6A to FIG. 6C are schematic plan views illustrating another light emitting device according to the first embodiment.
These figures correspond to the light emitting device 114. FIG. 6A illustrates a pattern of a conductive layer that is electrically connected to the semiconductor layer of the first conductivity type. FIG. 6B illustrates a pattern of a conductive layer electrically connected to the second conductivity type semiconductor layer. FIG. 6C illustrates the connection portion and electrode patterns.

  As shown in FIGS. 6A and 6B, a conductive layer electrically connected to the first conductivity type semiconductor layer and a conductive layer electrically connected to the second conductivity type semiconductor layer. And are comb-like. Thereby, the current is made uniform. These conductive layers are connected in series by a connecting portion.

(Second Embodiment)
FIG. 7A and FIG. 7B are schematic views illustrating the light emitting device according to the second embodiment.
FIG. 7A is a plan view. FIG. 7B is a cross-sectional view taken along line A1-A2 of FIG.
As shown in FIGS. 7A and 7B, the light emitting device 121 according to the present embodiment also includes, for example, a light emitting unit 71 and a wavelength conversion layer 72. The configuration of the wavelength conversion layer 72 is the same as that of the light emitting device 111, for example. Also in this case, the outer shape of the light emitting unit 71 is a hexagon (for example, a regular hexagon). In the light emitting device 121, the configuration of the light emitting unit 71 is different from that of the light emitting device 111. Hereinafter, the light emitting unit 71 in the light emitting device 121 will be described.

  The light emitting device 121 (light emitting unit 71) includes a base 51, first to fourth semiconductor layers 11 to 14, a first intermediate semiconductor layer IL1, a second intermediate semiconductor layer IL2, and first to fourth conductive layers 11cl. -14cl and 1st connection part CP1.

  The first semiconductor layer 11 is separated from the base body 51 in the separation direction and has the first conductivity type. The separation direction is, for example, the X-axis direction. The first semiconductor layer 11 includes first to fourth sides s1 to s4. The first side s1 extends along a first direction D1 that intersects the separation direction. The second side s2 extends along a second direction D2 that intersects the separation direction and is inclined with respect to the first direction D2. The third side s3 intersects the separation direction and extends along a third direction D3 that is inclined with respect to the first direction D1 and the second direction D2. The fourth side s4 intersects the separation direction and the first direction D1, and is separated from the first side s1 in the fourth direction D4 inclined with respect to the second direction D2 and the third direction D3. The fourth side s4 extends along the first direction D2. The length of the fourth side s4 in the first direction is longer than the length of the first side s1 in the first direction D2.

  The planar shape of the first semiconductor layer 11 is substantially trapezoidal.

  The second semiconductor layer 12 is provided between the base 51 and the first semiconductor layer 11 and has the second conductivity type. The first intermediate conductor layer IL1 is provided between the first semiconductor layer 11 and the second semiconductor layer 12.

  The first conductive layer 11cl includes a first extension part ep1. The first extending part ep1 extends along the fourth direction D4. The first conductive layer 11cl is electrically connected to the first semiconductor layer 11.

  The second conductive layer 12cl is provided between the base 51 and the second semiconductor layer 12, and is electrically connected to the second semiconductor layer 12.

  The third semiconductor layer 13 is separated from the base body 51 in the separation direction, and is aligned with the first semiconductor layer 11 in the fourth direction D4. The third semiconductor layer 13 is the first conductivity type. The third semiconductor layer 13 includes fifth to eighth sides s5 to s8. The fifth side s5 extends along the first direction D1. The fourth side s4 is arranged between the fifth side s5 and the first side s1. The sixth side s6 extends along the second direction D2. The seventh side s7 extends along the third direction D3. The eighth side s8 is provided between the fifth side s5 and the fourth side s4 and extends along the first direction D1. The length of the eighth side s8 in the first direction D1 is longer than the length of the fifth side s5 in the first direction D1.

  The planar shape of the third semiconductor layer 13 is substantially trapezoidal.

  The fourth semiconductor layer 14 is provided between the base 51 and the third semiconductor layer 13 and has the second conductivity type. The second intermediate semiconductor layer IL2 is provided between the third semiconductor layer 13 and the fourth semiconductor layer 14.

  The third conductive layer 13cl includes a second extending part ep2. The second extending part ep2 extends along the fourth direction D4. The third conductive layer 13cl is electrically connected to the third semiconductor layer 13. The fourth conductive layer 14cl is provided between the base 51 and the fourth semiconductor layer 14 and is electrically connected to the fourth semiconductor layer 14.

  The first connection portion CP1 electrically connects the first conductive layer 11cl and the fourth conductive layer 14cl.

  Also in this case, the first semiconductor layer 11, the second semiconductor layer 12, and the first intermediate semiconductor layer IL1 become the first light emitting layer EU1. The third semiconductor layer 13, the fourth semiconductor layer 14, and the second intermediate semiconductor layer IL2 become the second light emitting layer EU2. The outer shape of these light emitting layers is a trapezoid. A hexagonal (for example, regular hexagonal) light emitting portion 71 is formed by a plurality of trapezoidal light emitting layers. High uniformity of light emission.

  Furthermore, extending portions (a first extending portion ep1 and a second extending portion ep2) are provided. Current spreads. Thereby, highly uniform light emission is obtained.

In the light-emitting device 121, the light-emitting layer is a lateral conduction type.
That is, the first semiconductor layer 11 includes a first region 11a and a second region 11b aligned with the first region 11a in a direction crossing the separation direction. The second semiconductor layer 12 is provided between the base 51 and the second region 11b. The first intermediate semiconductor layer IL1 is provided between the second region 11b and the second semiconductor layer 12. The first extending part ep1 is provided between the base body 51 and the first region 11a.

  The third semiconductor layer 13 includes a third region 13a and a fourth region 13b aligned with the third region 13a in a direction crossing the separation direction. The fourth semiconductor layer 14 is provided between the base body 51 and the fourth region 13b. The second intermediate semiconductor layer IL2 is provided between the fourth region 13b and the fourth semiconductor layer 14. The second extending part ep2 is provided between the base body 51 and the third region 13a.

  Also in this example, the first electrode pd1 and the second electrode pd2 are provided. The first electrode pd1 is electrically connected to the third semiconductor layer 13. The second electrode pd2 is electrically connected to the second semiconductor layer 12. At least a part of the first electrode pd1 overlaps the third semiconductor layer 13 in a direction perpendicular to the separation direction. At least a part of the second electrode pd <b> 2 overlaps the first semiconductor layer 11 in the direction perpendicular to the separation direction.

Also in this example, the conductive layer has a comb-teeth shape.
That is, the first conductive layer 11cl further includes the first coupling portion cp1. The first coupling part cp1 extends, for example, along the first direction D1. A plurality of first extending portions ep1 are provided. One end of each of the plurality of first extending portions ep1 is connected to the first connecting portion cp1.

  In the embodiment, a plurality of first connecting portions cp1 may be provided. The first coupling part cp1 may be provided at the end of the light emitting layer. By providing the plurality of first connecting portions cp1, for example, the uniformity of current along the first direction is increased.

  The second conductive layer 12cl includes the first opposing extension portion eq1, and the first opposing extension portion eq1 extends along the fourth direction D4. The first opposing extension portion eq1 is located between two of the plurality of first extension portions ep1.

  In this example, a first opposing connection portion cq1 is provided. The first opposing connection portion cq1 extends, for example, along the first direction D1. A plurality of first opposing extending portions eq1 are provided. One end of each of the plurality of first opposing extending portions eq1 is connected to the first opposing connecting portion cq1.

  On the other hand, the third conductive layer 13cl further includes a second coupling portion cp2. The second coupling part cp2 extends, for example, along the first direction D1. A plurality of second extending portions ep2 are provided. One end of each of the plurality of second extending portions ep2 is coupled to the second coupling portion cp2.

  The fourth conductive layer 14cl includes the second opposing extension portion eq2, and the second opposing extension portion eq2 extends along the fourth direction D4. The second opposing extension part eq2 is located between two of the plurality of second extension parts ep2.

  In this example, a second opposing connection portion cq2 is provided. For example, the second opposing coupling portion cq2 extends along the first direction D1. A plurality of second opposing extending portions eq2 are provided. One end of each of the plurality of second opposing extending portions eq2 is connected to the second opposing connecting portion cq2.

  By using the comb-like conductive layer, the current uniformity is further improved. Furthermore, uniform light emission can be obtained.

  The first connection portion CP1 includes a first wiring region CR1, a first counter wiring region CS1, and a first intermediate wiring region CM1. The first wiring region CR1 is electrically connected to the first conductive layer 11cl. The first counter wiring region CS1 is electrically connected to the fourth conductive layer 14cl. The first intermediate wiring region CM1 is electrically connected to the first wiring region CR1 and the first counter wiring region CS1. At least a part of the first wiring region CR1 is disposed between a part of the first intermediate wiring region CM1 and the base body 51. At least a part of the first counter wiring area CS1 is arranged between another part of the first intermediate wiring area CM1 and the base body 51.

  In the light emitting device 121, the first to fourth semiconductor layers 11 to 14 and the first and second intermediate semiconductor layers IL2 and the second semiconductor layer IL2 are disposed between the base 51 and the wavelength conversion layer 72 in the separation direction (Z-axis direction). And IL2. An outer edge 72r of the wavelength conversion layer 72 in a plane (XY plane) intersecting with the separation direction is circular. The outer edge 71r of the light emitting portion 71 is substantially hexagonal (for example, regular hexagon).

  That is, for example, each of the first side s1, the second side s2, the third side s3, the fifth side s5, the sixth side s6, and the seventh side s7 is a hexagon (for example, a regular hexagon) of the outer edge 72r. Along six sides.

  The angle between the first direction D1 and the second direction D2 is, for example, not less than 58 degrees and not more than 62 degrees. The angle between the first direction D1 and the third direction D3 is, for example, not less than 58 degrees and not more than 62 degrees. The angle between the second direction D2 and the third direction D3 is, for example, not less than 58 degrees and not more than 62 degrees. The angle between the first direction D1 and the second direction D2 may be, for example, 59 degrees or more and 61 degrees or less. The angle between the first direction D1 and the third direction D3 may be, for example, 59 degrees or more and 61 degrees or less. The angle between the second direction D2 and the third direction D3 may be, for example, 59 degrees or more and 61 degrees or less.

  The angle between the first direction D1 and the fourth direction D4 is, for example, not less than 80 degrees and not more than 100 degrees. The angle between the first direction D1 and the fourth direction D4 may be, for example, not less than 85 degrees and not more than 95 degrees.

  Uniform light emission can be obtained by using the hexagonal light-emitting portion 71. By combining with the wavelength conversion layer 72 having a circular outer shape, a large light emission area can be obtained. By using the extending portion, the current spreads and the uniformity of light emission is further improved.

  In the present embodiment, the extending portion extends in the direction (fourth direction) in which the first semiconductor layer 11 and the third semiconductor layer 13 are arranged. The direction of current is along the direction in which the first semiconductor layer 11 and the third semiconductor layer 13 are arranged. Thereby, a low resistance is obtained.

FIG. 8 is a schematic cross-sectional view illustrating another light emitting device according to the second embodiment.
FIG. 8 is a cross-sectional view corresponding to the line A1-A2 of FIG.
In another light emitting device 122 according to this embodiment, the configuration of the connection portion is different from that of the light emitting device 121. Other than this, for example, it is the same as the light emitting device 121. Hereinafter, the connection part in the light emitting device 122 will be described.

  In the light emitting device 122, the first connection portion CP1 is electrically connected to the first wiring region CR1 electrically connected to the first conductive layer 11cl, the fourth conductive layer 14cl, and the first wiring region CR1. First opposing wiring region CS1. In the separation direction (Z-axis direction), a part of the first wiring region CR1 overlaps with a part of the first counter wiring region CS1.

  The light emitting device 122 can also provide a light emitting device that can improve the uniformity of light emission.

FIG. 9 is a schematic cross-sectional view illustrating another light emitting device according to the second embodiment.
FIG. 9 is a cross-sectional view corresponding to the line A1-A2 of FIG.
In another light emitting device 123 according to this embodiment, the configuration of the semiconductor layer, the configuration of the connection portion, and the configuration of the electrodes are different from those of the light emitting device 121. Other than this, for example, it is the same as the light emitting device 121. Hereinafter, the semiconductor layer, the connection portion, and the electrode in the light emitting device 123 will be described.

  The light emitting unit 71 of the light emitting device 123 includes a longitudinal conduction type semiconductor light emitting element. That is, a part of the first semiconductor layer 11 is provided between the first extension part ep1 and the first intermediate semiconductor layer IL1. A part of the third semiconductor layer 13 is provided between the second extension part ep2 and the second intermediate semiconductor layer IL2. Another part of the first semiconductor layer 11 is provided between a part of the first connection portion CP1 and the base body 51.

  Also in this case, a first electrode pd1 electrically connected to the fifth semiconductor layer 15 and a second electrode pd2 electrically connected to the second semiconductor layer 12 are provided. Another part of the fifth semiconductor layer 15 is disposed between the first electrode pd <b> 1 and the base body 51. At least a part of the second electrode pd <b> 2 overlaps the first semiconductor layer 11 in the direction perpendicular to the separation direction.

  Also in this case, the first side surface insulating layer 61s is provided. The first semiconductor layer 11 includes a first side surface 11s that intersects a direction perpendicular to the separation direction. At least a part of the first side surface insulating layer 61s is provided between the first connection portion CP1 and the first side surface 11s.

  The light emitting device 123 can also provide a light emitting device capable of improving the uniformity of light emission.

FIG. 10 is a schematic plan view illustrating another light emitting device according to the second embodiment.
FIG. 10 illustrates a light emitting unit 71 in another light emitting device 124 according to this embodiment.

  As shown in FIG. 10, the light emitting device 124 (light emitting unit 71) includes first to twelfth light emitting layers EU1 to EU12. The first and second light emitting layers EU1 and EU2 are the same as those in the light emitting device 121. The third to twelfth light emitting layers EU3 to EU12 have a configuration similar to any one of the first and second light emitting layers EU1 and EU2. The first to twelfth light emitting layers EU1 to EU12 are connected in series. Also in the light emitting device 124, the outer shape of the light emitting unit 71 is a hexagon (for example, a regular hexagon). A hexagon (for example, regular hexagon) is formed by 12 light emitting layers.

  Also in the light emitting device 124, the first electrode pd1 and the second electrode pd2 are provided. A voltage is applied between these electrodes. A current flows between these electrodes. The current flows through the semiconductor layer including the first to twelfth light emitting layers EU1 to EU12 along the current path ICP.

  In the light emitting device 124, a plurality of light emitting layers are arranged along one direction (fourth direction D4). The extending part extends along the fourth direction D4. Thereby, the current path ICP is short. For example, the current path ICP in the light emitting device 124 is shorter than the current path ICP in the light emitting device 114. Thereby, a low resistance is obtained.

FIG. 11A to FIG. 11C are schematic plan views illustrating another light emitting device according to the second embodiment.
These drawings correspond to the light emitting device 124. FIG. 11A illustrates a pattern of a conductive layer electrically connected to the first conductivity type semiconductor layer. FIG. 11B illustrates the pattern of the conductive layer electrically connected to the second conductivity type semiconductor layer. FIG. 11C illustrates the connection portion and electrode patterns.

  As shown in FIGS. 11A and 6B, a conductive layer electrically connected to the first conductivity type semiconductor layer and a conductive layer electrically connected to the second conductivity type semiconductor layer. And are comb-like. Thereby, the current is made uniform. These conductive layers are connected in series by a connecting portion.

  In the light emitting devices 112 to 114 and 121 to 124, the retreating portion 51c described with reference to FIGS. 2C and 2D may be provided. Thereby, a light emitting device can be manufactured with high productivity.

  In the above embodiment, for example, nitride semiconductors are used for the first to sixth semiconductor layers 11 to 16 and the first to third intermediate semiconductor layers IL1 to IL3. However, in the embodiment, these semiconductor materials are arbitrary.

Embodiments include the following features.
(Feature 1)
A substrate;
A first semiconductor layer of a first conductivity type spaced apart from the base body in a separation direction,
A first side extending along a first direction intersecting the separation direction;
A second side extending along a second direction that intersects the separation direction and is inclined with respect to the first direction;
A third side that is spaced apart from the first side and extends along the first direction in the second direction;
A fourth side spaced apart from the second side in the first direction and extending along the second direction;
The first semiconductor layer comprising:
A second semiconductor layer of a second conductivity type provided between the base and the first semiconductor layer;
A first intermediate semiconductor layer provided between the first semiconductor layer and the second semiconductor layer;
A first conductive layer including a first extension extending along one of the first direction and the second direction and electrically connected to the first semiconductor layer;
A second conductive layer provided between the base and the second semiconductor layer and electrically connected to the second semiconductor layer;
A third semiconductor layer of the first conductivity type that is separated from the substrate in the separation direction and aligned with the first semiconductor layer in a direction intersecting the separation direction;
A fifth side extending along the second direction;
A sixth side that intersects the separation direction and extends along a third direction that is inclined with respect to the first direction and the second direction;
A seventh side extending in the second direction and spaced apart from the fifth side in the third direction;
An eighth side extending in the third direction and spaced apart from the sixth side in the second direction;
The third semiconductor layer comprising:
A fourth semiconductor layer of the second conductivity type provided between the base and the third semiconductor layer;
A second intermediate semiconductor layer provided between the third semiconductor layer and the fourth semiconductor layer;
A third conductive layer including a second extension extending along one of the second direction and the third direction and electrically connected to the third semiconductor layer;
A fourth conductive layer provided between the base and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
A fifth semiconductor layer of the first conductivity type aligned with the first semiconductor layer in a direction that is separated from the base in the separation direction and intersects the separation direction;
A ninth side extending along the third direction;
A tenth side extending along the first direction;
An eleventh side that is spaced apart from the ninth side and extends along the third direction in the first direction;
A twelfth side that is separated from the tenth side and extends along the first direction in the third direction;
The fifth semiconductor layer comprising:
A sixth semiconductor layer of the second conductivity type provided between the base and the fifth semiconductor layer;
A third intermediate semiconductor layer provided between the fifth semiconductor layer and the sixth semiconductor layer;
A fifth conductive layer including a third extension extending along one of the first direction and the third direction and electrically connected to the fifth semiconductor layer;
A sixth conductive layer provided between the base and the sixth semiconductor layer and electrically connected to the sixth semiconductor layer;
A first connection portion for electrically connecting the first conductive layer and the fourth conductive layer;
A second connection portion for electrically connecting the third conductive layer and the sixth conductive layer;
A light emitting device comprising:
(Feature 2)
A wavelength conversion layer;
In the separation direction, the first to sixth semiconductor layers and the first to third intermediate semiconductor layers are disposed between the base and the wavelength conversion layer,
The light emitting device according to claim 1, wherein an outer edge of the wavelength conversion layer in a plane intersecting the separation direction is circular.
(Feature 3)
The light emission according to Feature 1 or 2, wherein each of the first side, the fourth side, the sixth side, the seventh side, the tenth side, and the eleventh side is along six sides of a regular hexagon. apparatus.
(Feature 4)
The fifth side is along the second side,
The ninth side is along the eighth side,
The twelfth side is the light emitting device according to any one of features 1 to 3, which is along the third side.
(Feature 5)
The angle between the first direction and the second direction is not less than 58 degrees and not more than 62 degrees,
The angle between the first direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The light emitting device according to any one of features 1 to 3, wherein an angle between the second direction and the third direction is not less than 58 degrees and not more than 62 degrees.
(Feature 6)
The first semiconductor layer includes a first region and a second region aligned with the first region in a direction intersecting the separation direction,
The second semiconductor layer is provided between the base and the second region;
The first intermediate semiconductor layer is provided between the second region and the second semiconductor layer;
The first extending portion is provided between the base body and the first region,
The third semiconductor layer includes a third region, and a fourth region aligned with the third region in a direction intersecting the separation direction,
The fourth semiconductor layer is provided between the base and the fourth region,
The second intermediate semiconductor layer is provided between the fourth region and the fourth semiconductor layer,
The second extending portion is provided between the base body and the third region,
The fifth semiconductor layer includes a fifth region and a sixth region aligned with the fifth region in a direction crossing the separation direction,
The sixth semiconductor layer is provided between the base and the sixth region,
The third intermediate semiconductor layer is provided between the sixth region and the sixth semiconductor layer;
The light emitting device according to any one of features 1 to 5, wherein the third extending portion is provided between the base and the fifth region.
(Feature 7)
A first electrode electrically connected to the fifth semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
In a direction perpendicular to the separation direction, at least a part of the first electrode overlaps the fifth semiconductor layer;
The light emitting device according to claim 6, wherein at least a part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction.
(Feature 8)
The first conductive layer further includes a first connection part,
A plurality of the first extending portions are provided,
The light emitting device according to claim 6 or 7, wherein one end of each of the plurality of first extending portions is connected to the first connecting portion.
(Feature 9)
The second conductive layer includes a first opposing extension portion extending along the one of the first direction and the second direction,
The light emitting device according to claim 8, wherein the first opposing extension portion is located between two of the plurality of first extension portions.
(Feature 10)
In a direction perpendicular to the separation direction, at least a part of the first connection portion overlaps the first semiconductor layer;
The light emitting device according to any one of features 6 to 9, wherein at least part of the second connection portion overlaps the third semiconductor layer in a direction perpendicular to the separation direction.
(Feature 11)
The first semiconductor layer includes a region that does not overlap the first connection portion in a direction perpendicular to the separation direction;
The light emitting device according to claim 10, wherein the third semiconductor layer includes a region that does not overlap the second connection portion in a direction perpendicular to the separation direction.
(Feature 12)
The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first counter wiring region electrically connected to the fourth conductive layer;
A first intermediate wiring region electrically connected to the first wiring region and the first opposing wiring region;
Including
At least a portion of the first wiring region is disposed between a portion of the first intermediate wiring region and the base;
The light emitting device according to any one of features 6 to 11, wherein at least a part of the first counter wiring region is disposed between another part of the first intermediate wiring region and the base body.
(Feature 13)
The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first opposing wiring region electrically connected to the fourth conductive layer and the first wiring region;
Including
The light emitting device according to any one of features 6 to 11, wherein a part of the first wiring region overlaps a part of the first counter wiring region in the separation direction.
(Feature 14)
A portion of the first semiconductor layer is provided between the first extension portion and the first intermediate semiconductor layer;
A portion of the third semiconductor layer is provided between the second extension portion and the second intermediate semiconductor layer;
A portion of the fifth semiconductor layer is provided between the third extension portion and the third intermediate semiconductor layer;
Another part of the first semiconductor layer is provided between a part of the first connection part and the base;
The light emitting device according to any one of features 1 to 5, wherein another part of the third semiconductor layer is provided between a part of the second connection part and the base.
(Feature 15)
A first electrode electrically connected to the fifth semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
Another part of the fifth semiconductor layer is disposed between the first electrode and the base body,
15. The light-emitting device according to claim 14, wherein at least a part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction.
(Feature 16)
A first side insulating layer;
The first semiconductor layer includes a first side surface intersecting a direction perpendicular to the separation direction,
The light emitting device according to the feature 14 or 15, wherein at least a part of the first side surface insulating layer is provided between the first connection portion and the first side surface.
(Feature 17)
A substrate;
A first semiconductor layer of a first conductivity type spaced apart from the base body in a separation direction,
A first side extending along a first direction intersecting the separation direction;
A second side extending along a second direction that intersects the separation direction and is inclined with respect to the first direction;
A third side extending along a third direction that intersects the separation direction and is inclined with respect to the first direction and the second direction;
A fourth side that is separated from the first side and extends along the first direction in a fourth direction that intersects the separation direction and the first direction and is inclined with respect to the second direction and the third direction;
A length of the fourth side in the first direction is longer than a length of the first side in the first direction; and
A second semiconductor layer of a second conductivity type provided between the base and the first semiconductor layer;
A first intermediate semiconductor layer provided between the first semiconductor layer and the second semiconductor layer;
A first conductive layer including a first extension extending along the fourth direction and electrically connected to the first semiconductor layer;
A second conductive layer provided between the base and the second semiconductor layer and electrically connected to the second semiconductor layer;
A third semiconductor layer of the first conductivity type separated from the substrate in the separation direction and aligned with the first semiconductor layer in the fourth direction;
A fifth side extending along the first direction, wherein the fourth side is disposed between the fifth side and the first side; and
A sixth side extending along the second direction;
A seventh side extending along the third direction;
An eighth side provided between the fifth side and the fourth side and extending along the first direction;
The length of the eighth side in the first direction is longer than the length of the fifth side in the first direction; and
A fourth semiconductor layer of the second conductivity type provided between the base and the third semiconductor layer;
A second intermediate semiconductor layer provided between the third semiconductor layer and the fourth semiconductor layer;
A third conductive layer including a second extension extending along the fourth direction and electrically connected to the third semiconductor layer;
A fourth conductive layer provided between the base and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
A first connection portion for electrically connecting the first conductive layer and the fourth conductive layer;
A light emitting device comprising:
(Feature 18)
A wavelength conversion layer;
In the separation direction, the first to fourth semiconductor layers, and the first and second intermediate semiconductor layers are disposed between the base and the wavelength conversion layer,
18. The light emitting device according to claim 17, wherein an outer edge of the wavelength conversion layer in a plane intersecting the separation direction is circular.
(Feature 19)
19. The feature 17 or 18, wherein each of the first side, the second side, the third side, the fifth side, the sixth side, and the seventh side is along six sides of a regular hexagon. Light emitting device.
(Feature 20)
The angle between the first direction and the second direction is not less than 58 degrees and not more than 62 degrees,
The angle between the first direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The angle between the second direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The light emitting device according to any one of features 17 to 17, wherein an angle between the first direction and the fourth direction is not less than 80 degrees and not more than 100 degrees.
(Feature 21)
The first semiconductor layer includes a first region and a second region aligned with the first region in a direction intersecting the separation direction,
The second semiconductor layer is provided between the base and the second region;
The first intermediate semiconductor layer is provided between the second region and the second semiconductor layer;
The first extending portion is provided between the base body and the first region,
The third semiconductor layer includes a third region, and a fourth region aligned with the third region in a direction intersecting the separation direction,
The fourth semiconductor layer is provided between the base and the fourth region,
The second intermediate semiconductor layer is provided between the fourth region and the fourth semiconductor layer,
The light emitting device according to any one of features 17 to 20, wherein the second extending portion is provided between the base and the third region.
(Feature 22)
A first electrode electrically connected to the third semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
At least a portion of the first electrode overlaps the third semiconductor layer in a direction perpendicular to the separation direction;
The light emitting device according to claim 21, wherein at least part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction.
(Feature 23)
The first conductive layer further includes a first connection part extending along the first direction,
A plurality of the first extending portions are provided,
The light emitting device according to the feature 21 or 22, wherein one end of each of the plurality of first extending portions is connected to the first connecting portion.
(Feature 24)
The second conductive layer includes a first opposing extension extending along the fourth direction,
24. The light emitting device according to claim 23, wherein the first opposing extension portion is located between two of the plurality of first extension portions.
(Feature 25)
The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first counter wiring region electrically connected to the fourth conductive layer;
A first intermediate wiring region electrically connected to the first wiring region and the first opposing wiring region;
Including
At least a portion of the first wiring region is disposed between a portion of the first intermediate wiring region and the base;
The light emitting device according to any one of features 21 to 24, wherein at least a part of the first counter wiring region is disposed between another part of the first intermediate wiring region and the base body.
(Feature 26)
The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first opposing wiring region electrically connected to the fourth conductive layer and the first wiring region;
Including
The light emitting device according to any one of features 21 to 24, wherein a part of the first wiring region overlaps a part of the first counter wiring region in the separation direction.
(Feature 27)
A portion of the first semiconductor layer is provided between the first extension portion and the first intermediate semiconductor layer;
A portion of the third semiconductor layer is provided between the second extension portion and the second intermediate semiconductor layer;
The light emitting device according to any one of features 17 to 20, wherein another part of the first semiconductor layer is provided between a part of the first connection portion and the base.
(Feature 28)
A first electrode electrically connected to the fifth semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
Another part of the fifth semiconductor layer is disposed between the first electrode and the base body,
28. The light emitting device according to claim 27, wherein at least part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction.
(Feature 29)
A first side insulating layer;
The first semiconductor layer includes a first side surface intersecting a direction perpendicular to the separation direction,
29. The light emitting device according to Feature 27 or 28, wherein at least a part of the first side surface insulating layer is provided between the first connection portion and the first side surface.

  According to the embodiment, it is possible to provide a light emitting device that can improve the uniformity of light emission.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configuration of each element such as a base, a semiconductor layer, a conductive layer, a connection portion, an electrode, and an insulating layer included in the light emitting device, those skilled in the art can appropriately select the present invention by appropriately selecting from a known range. As long as the same effect can be obtained, it is included in the scope of the present invention.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all light-emitting devices that can be implemented by a person skilled in the art based on the light-emitting device described above as an embodiment of the present invention are also included in the scope of the present invention as long as they include the gist of the present invention. .

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  11-16 ... Semiconductor layer, 11a ... 1st area | region, 11b ... 2nd area | region, 11cl-16cl ... 1st-6th conductive layer, 11dp ... Unevenness, 11s ... 1st side surface, 13a ... 3rd area | region, 13b ... 1st 4 regions, 13 dp: irregularities, 13 s: second side, 15 a: fifth region, 15 b: sixth region, 15 dp: irregularities, 51: base, 51 b: non-retreating portion, 51 c: retreating portion, 52: bonding layer, 61 ˜63: insulating layer, 61s, 62s: first and second side surface insulating layers, 71: light emitting portion, 71d: dividing line, 71r: outer edge, 71s: semiconductor crystal layer, 72: wavelength conversion layer, 72r: outer edge, 81 ... Insulating layer, 111-114, 121-124 ... Light emitting device, AR ... Arrow, CL1 ... Opposite wiring layer, CM1, CM2 ... First and second intermediate wiring regions, CP1, CP2 ... First, second contact Part, CR1 to CR3 ... first to third wiring regions, CS1, CS2 ... first and second opposing wiring regions, D1 to D4 ... first to fourth directions, EU1 to EU12 ... first to twelfth light emitting layers, IL1 to IL3 ... first to third intermediate semiconductor layers, WR1, WR2 ... wiring, cp1 to cp3 ... first to third coupling parts, cq1 to cq3 ... first to third opposing coupling parts, ep1 to ep3 ... first -3rd extension part, eq1-eq3 ... 1st-3rd opposing extension part, pd1, pd2 ... 1st, 2nd electrode, s1-s12 ... 1st-12th side

Claims (20)

A substrate;
A first semiconductor layer of a first conductivity type spaced apart from the base body in a separation direction,
A first side extending along a first direction intersecting the separation direction;
A second side extending along a second direction that intersects the separation direction and is inclined with respect to the first direction;
A third side that is spaced apart from the first side and extends along the first direction in the second direction;
A fourth side spaced apart from the second side in the first direction and extending along the second direction;
The first semiconductor layer comprising:
A second semiconductor layer of a second conductivity type provided between the base and the first semiconductor layer;
A first intermediate semiconductor layer provided between the first semiconductor layer and the second semiconductor layer;
A first conductive layer including a first extension extending along one of the first direction and the second direction and electrically connected to the first semiconductor layer;
A second conductive layer provided between the base and the second semiconductor layer and electrically connected to the second semiconductor layer;
A third semiconductor layer of the first conductivity type that is separated from the substrate in the separation direction and aligned with the first semiconductor layer in a direction intersecting the separation direction;
A fifth side extending along the second direction;
A sixth side that intersects the separation direction and extends along a third direction that is inclined with respect to the first direction and the second direction;
A seventh side extending in the second direction and spaced apart from the fifth side in the third direction;
An eighth side extending in the third direction and spaced apart from the sixth side in the second direction;
The third semiconductor layer comprising:
A fourth semiconductor layer of the second conductivity type provided between the base and the third semiconductor layer;
A second intermediate semiconductor layer provided between the third semiconductor layer and the fourth semiconductor layer;
A third conductive layer including a second extension extending along one of the second direction and the third direction and electrically connected to the third semiconductor layer;
A fourth conductive layer provided between the base and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
A fifth semiconductor layer of the first conductivity type aligned with the first semiconductor layer in a direction that is separated from the base in the separation direction and intersects the separation direction;
A ninth side extending along the third direction;
A tenth side extending along the first direction;
An eleventh side that is spaced apart from the ninth side and extends along the third direction in the first direction;
A twelfth side that is separated from the tenth side and extends along the first direction in the third direction;
The fifth semiconductor layer comprising:
A sixth semiconductor layer of the second conductivity type provided between the base and the fifth semiconductor layer;
A third intermediate semiconductor layer provided between the fifth semiconductor layer and the sixth semiconductor layer;
A fifth conductive layer including a third extension extending along one of the first direction and the third direction and electrically connected to the fifth semiconductor layer;
A sixth conductive layer provided between the base and the sixth semiconductor layer and electrically connected to the sixth semiconductor layer;
A first connection portion for electrically connecting the first conductive layer and the fourth conductive layer;
A second connection portion for electrically connecting the third conductive layer and the sixth conductive layer;
A light emitting device comprising: A wavelength conversion layer;
In the separation direction, the first to sixth semiconductor layers and the first to third intermediate semiconductor layers are disposed between the base and the wavelength conversion layer,
The light emitting device according to claim 1, wherein an outer edge of the wavelength conversion layer in a plane intersecting the separation direction is circular. The angle between the first direction and the second direction is not less than 58 degrees and not more than 62 degrees,
The angle between the first direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The light emitting device according to claim 1 or 2, wherein an angle between the second direction and the third direction is 58 degrees or more and 62 degrees or less. The first semiconductor layer includes a first region and a second region aligned with the first region in a direction intersecting the separation direction,
The second semiconductor layer is provided between the base and the second region;
The first intermediate semiconductor layer is provided between the second region and the second semiconductor layer;
The first extending portion is provided between the base body and the first region,
The third semiconductor layer includes a third region, and a fourth region aligned with the third region in a direction intersecting the separation direction,
The fourth semiconductor layer is provided between the base and the fourth region,
The second intermediate semiconductor layer is provided between the fourth region and the fourth semiconductor layer,
The second extending portion is provided between the base body and the third region,
The fifth semiconductor layer includes a fifth region and a sixth region aligned with the fifth region in a direction crossing the separation direction,
The sixth semiconductor layer is provided between the base and the sixth region,
The third intermediate semiconductor layer is provided between the sixth region and the sixth semiconductor layer;
The light emitting device according to claim 1, wherein the third extending portion is provided between the base body and the fifth region. A first electrode electrically connected to the fifth semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
In a direction perpendicular to the separation direction, at least a part of the first electrode overlaps the fifth semiconductor layer;
The light emitting device according to claim 4, wherein at least a part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction. The first conductive layer further includes a first connection part,
A plurality of the first extending portions are provided,
6. The light-emitting device according to claim 4, wherein one end of each of the plurality of first extending portions is connected to the first connecting portion. The second conductive layer includes a first opposing extension portion extending along the one of the first direction and the second direction,
The light emitting device according to claim 6, wherein the first opposing extension portion is positioned between two of the plurality of first extension portions. The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first counter wiring region electrically connected to the fourth conductive layer;
A first intermediate wiring region electrically connected to the first wiring region and the first opposing wiring region;
Including
At least a portion of the first wiring region is disposed between a portion of the first intermediate wiring region and the base;
The light emitting device according to claim 4, wherein at least a part of the first counter wiring region is disposed between another part of the first intermediate wiring region and the base body. The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first opposing wiring region electrically connected to the fourth conductive layer and the first wiring region;
Including
The light emitting device according to claim 4, wherein a part of the first wiring region overlaps a part of the first counter wiring region in the separation direction. A portion of the first semiconductor layer is provided between the first extension portion and the first intermediate semiconductor layer;
A portion of the third semiconductor layer is provided between the second extension portion and the second intermediate semiconductor layer;
A portion of the fifth semiconductor layer is provided between the third extension portion and the third intermediate semiconductor layer;
Another part of the first semiconductor layer is provided between a part of the first connection part and the base;
The light emitting device according to claim 1, wherein another part of the third semiconductor layer is provided between a part of the second connection part and the base. A substrate;
A first semiconductor layer of a first conductivity type spaced apart from the base body in a separation direction,
A first side extending along a first direction intersecting the separation direction;
A second side extending along a second direction that intersects the separation direction and is inclined with respect to the first direction;
A third side extending along a third direction that intersects the separation direction and is inclined with respect to the first direction and the second direction;
A fourth side that is separated from the first side and extends along the first direction in a fourth direction that intersects the separation direction and the first direction and is inclined with respect to the second direction and the third direction;
A length of the fourth side in the first direction is longer than a length of the first side in the first direction; and
A second semiconductor layer of a second conductivity type provided between the base and the first semiconductor layer;
A first intermediate semiconductor layer provided between the first semiconductor layer and the second semiconductor layer;
A first conductive layer including a first extension extending along the fourth direction and electrically connected to the first semiconductor layer;
A second conductive layer provided between the base and the second semiconductor layer and electrically connected to the second semiconductor layer;
A third semiconductor layer of the first conductivity type separated from the substrate in the separation direction and aligned with the first semiconductor layer in the fourth direction;
A fifth side extending along the first direction, wherein the fourth side is disposed between the fifth side and the first side; and
A sixth side extending along the second direction;
A seventh side extending along the third direction;
An eighth side provided between the fifth side and the fourth side and extending along the first direction;
The length of the eighth side in the first direction is longer than the length of the fifth side in the first direction; and
A fourth semiconductor layer of the second conductivity type provided between the base and the third semiconductor layer;
A second intermediate semiconductor layer provided between the third semiconductor layer and the fourth semiconductor layer;
A third conductive layer including a second extension extending along the fourth direction and electrically connected to the third semiconductor layer;
A fourth conductive layer provided between the base and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
A first connection portion for electrically connecting the first conductive layer and the fourth conductive layer;
A light emitting device comprising: A wavelength conversion layer;
In the separation direction, the first to fourth semiconductor layers, and the first and second intermediate semiconductor layers are disposed between the base and the wavelength conversion layer,
The light emitting device according to claim 11, wherein an outer edge of the wavelength conversion layer in a plane intersecting the separation direction is circular. The angle between the first direction and the second direction is not less than 58 degrees and not more than 62 degrees,
The angle between the first direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The angle between the second direction and the third direction is not less than 58 degrees and not more than 62 degrees.
The light emitting device according to claim 11 or 12, wherein an angle between the first direction and the fourth direction is not less than 80 degrees and not more than 100 degrees. The first semiconductor layer includes a first region and a second region aligned with the first region in a direction intersecting the separation direction,
The second semiconductor layer is provided between the base and the second region;
The first intermediate semiconductor layer is provided between the second region and the second semiconductor layer;
The first extending portion is provided between the base body and the first region,
The third semiconductor layer includes a third region, and a fourth region aligned with the third region in a direction intersecting the separation direction,
The fourth semiconductor layer is provided between the base and the fourth region,
The second intermediate semiconductor layer is provided between the fourth region and the fourth semiconductor layer,
The light emitting device according to any one of claims 11 to 13, wherein the second extending portion is provided between the base and the third region. A first electrode electrically connected to the third semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
Further comprising
At least a portion of the first electrode overlaps the third semiconductor layer in a direction perpendicular to the separation direction;
The light emitting device according to claim 14, wherein at least a part of the second electrode overlaps the first semiconductor layer in a direction perpendicular to the separation direction. The first conductive layer further includes a first connection part extending along the first direction,
A plurality of the first extending portions are provided,
The light emitting device according to claim 14 or 15, wherein one end of each of the plurality of first extending portions is connected to the first connecting portion. The second conductive layer includes a first opposing extension extending along the fourth direction,
The light emitting device according to claim 16, wherein the first opposing extension portion is located between two of the plurality of first extension portions. The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first counter wiring region electrically connected to the fourth conductive layer;
A first intermediate wiring region electrically connected to the first wiring region and the first opposing wiring region;
Including
At least a portion of the first wiring region is disposed between a portion of the first intermediate wiring region and the base;
18. The light emitting device according to claim 14, wherein at least a part of the first counter wiring region is disposed between another part of the first intermediate wiring region and the base. The first connection part is:
A first wiring region electrically connected to the first conductive layer;
A first opposing wiring region electrically connected to the fourth conductive layer and the first wiring region;
Including
The light emitting device according to claim 14, wherein a part of the first wiring region overlaps a part of the first counter wiring region in the separation direction. A portion of the first semiconductor layer is provided between the first extension portion and the first intermediate semiconductor layer;
A portion of the third semiconductor layer is provided between the second extension portion and the second intermediate semiconductor layer;
The light emitting device according to claim 11, wherein another part of the first semiconductor layer is provided between a part of the first connection part and the base.

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