JP2017041474A - Color solid-state image sensor and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a color solid-state image sensor in which microlenses can be easily fabricated to have an appropriate film thickness and a shape for each color of colored transparent materials.SOLUTION: A transparent resin layer 8 having different heights depending on pixels is formed on a color filter 7 constituting a color solid-state image sensor. Microlenses 6 having convex shapes with different lens heights are formed on the respective pixels of the color filter 7 with a single pattern design by photolithographic patterning on the transparent resin layer 8 using a photomask 12 having a density gradation within a microlens pattern.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a color solid-state imaging device and a manufacturing method thereof.

  In recent years, imaging devices have been widely used with the expansion of the contents of image recording, communication, and broadcasting. Various types of image pickup devices have been proposed. An image pickup device incorporating a solid-state image pickup device that has been stably manufactured with a small size, light weight, and high performance can be used as a digital camera or digital video. It has become widespread.

  The solid-state imaging device has a plurality of photoelectric conversion elements that receive an optical image from a subject and convert incident light into an electrical signal. The types of photoelectric conversion elements are roughly classified into CCD (charge coupled device) type and CMOS (complementary metal oxide semiconductor) type. Further, two types of arrangements of photoelectric conversion elements, a linear sensor (line sensor) in which the photoelectric conversion elements are arranged in one row, and an area sensor (surface sensor) in which the photoelectric conversion elements are two-dimensionally arranged in the vertical and horizontal directions. It is divided roughly into. In any of the sensors, as the number of photoelectric conversion elements (number of pixels) increases, the captured image becomes more precise. In recent years, in particular, a method for manufacturing a solid-state imaging element having a large number of pixels at low cost has been studied.

  One of the important issues in performance required for a solid-state imaging device is to improve the sensitivity to incident light. In order to increase the amount of information of an image photographed with a miniaturized solid-state imaging device, it is necessary to miniaturize and highly integrate a photoelectric conversion device serving as a light receiving unit. However, when the photoelectric conversion elements are highly integrated, the area of each photoelectric conversion element is reduced, and the area ratio that can be used as the light receiving portion is also reduced. Therefore, the amount of light that can be taken into the light receiving portion of the photoelectric conversion element is reduced. Sensitivity is reduced. As means for preventing the sensitivity of such a miniaturized solid-state imaging device from being lowered, in order to efficiently capture light into the light receiving portion of the photoelectric conversion device, the light incident from the object is condensed for each pixel and subjected to photoelectric conversion. There has been proposed a technique for forming a microlens led to a light receiving portion of an element in a uniform shape on a photoelectric conversion element (see Patent Document 1). In this technique, the light is collected by the microlens and guided to the light receiving portion of the photoelectric conversion element, whereby the apparent aperture ratio of the light receiving portion can be increased, and the sensitivity of the solid-state imaging device is improved.

  In the case of a color solid-state image pickup device 1, for example, as shown in FIG. 1, one colorless and transparent micro cell is provided for each pixel (for each photoelectric conversion device) on a color filter 7 made of a colored transparent resin layer. The lens 6 is arranged to collect light, and the color-separated light is guided to the light receiving portion of the photoelectric conversion element 3. That is, in the case of the color solid-state imaging device 1, a plurality of photoelectric conversion elements 3 on the semiconductor substrate 2 are arranged on the light-receiving surface side surface 4 of the solid-state imaging device pixel portion via the transparent flattening layer 5. A plurality of colored transparent pixel pattern color filters 7 for repeatedly arranging colors are provided in correspondence with each of the photoelectric conversion elements 3. Further, after performing planarization on the plane in which the color filters 7 of the colored transparent pixel pattern are arranged by the second transparent planarization layer 51, each color of the colored transparent pixel pattern of the color filter 7 and photoelectric conversion are performed. The sensitivity is improved by providing it corresponding to the element 3.

Further, Patent Document 2 proposes a structure that reduces sensitivity variations during imaging by optimizing the microlens and the color filter by adjusting the relationship between the lens gap, the light receiving portion, and the edge portions of the color filter. ing.
In addition, the method of shortening the optical path by eliminating the transparent flattening layer formed between the color filter and the microlens in response to the problem that the sensitivity of the solid-state imaging device is reduced when the distance from the microlens to the light receiving portion is increased. Is proposed in Patent Document 3.

  Here, various proposals have been made as a method for forming the above-described microlens. Generally, a method using deformation accompanying thermal melting of a photosensitive resin is employed. For example, in Patent Document 4, a transparent resin, which is a material for a microlens, is imparted with photosensitivity, uniformly coated, selectively patterned by a photolithography method, and then a lens utilizing the thermal reflow property of the material. A flow lens method for creating a shape is described. In Patent Document 5, a lens matrix is formed on a flat layer of a transparent resin as a microlens material by a photolithography method and thermal reflow using a resist material having alkali solubility, photosensitivity, and thermal reflow. In addition, a transfer type is described in which the shape of the lens matrix is transferred to the transparent resin layer by a dry etching method.

Japanese Patent Laid-Open No. 3-152972 JP-A-8-316445 JP 2012-174792 A JP 2008-34509 A JP 2009-152315 A

Necessary to keep the effective sensitivity of the solid-state imaging device high by making the light capturing area of the microlens as wide as possible, that is, by narrowing the gap with the adjacent microlens and keeping the lens shape good It becomes a condition.
However, when manufacturing with the flow lens method, which has a relatively short manufacturing process, the thermal reflow behavior of the resin at the boundary between adjacent microlenses is controlled to maintain a narrow gap and good shape. Has a high degree of difficulty and causes quality instability.
In addition, in a color solid-state imaging device that inputs a color image using a color filter of a colored transparent pixel pattern, the size of a microlens provided on the colored transparent pixel corresponding to the pixel for each photoelectric conversion device, or a gap with an adjacent microlens If the light condensing performance varies due to variations in lens shape or the lens shape, the sensitivity balance for each color will be lost and defects such as unevenness in color expression will occur clearly. growing.

  The height of the formed microlens follows the film thickness variation for each color that occurs during the film formation of the colored transparent material, and therefore has a variation in light collection performance. Therefore, as shown in FIG. 1, the microlenses are uniformly formed on the upper portion by the flattening process of the plane in which the colored transparent pixel patterns are arranged by the second transparent flattening layer 51. However, the colored transparent resin material that constitutes the color filter has a difference in light-collecting properties due to the difference in optical properties such as refractive index for each color, so the microlens provided on the colored transparent pixel has an appropriate film thickness for each color. It is desirable to form.

  The present invention has been proposed in view of these problems, and a color solid-state imaging in which a microlens provided in a color solid-state imaging device can be easily set to a desired shape and an appropriate film thickness for each color of the colored transparent material. An object is to provide an element and a manufacturing method thereof.

In order to solve the problem, a color solid-state imaging device which is one embodiment of the present invention is divided into a plurality of pixels, and a semiconductor substrate in which a photoelectric conversion element is arranged in each pixel;
A plurality of microlenses arranged on the semiconductor substrate to collect incident light on each of the photoelectric conversion elements;
A color filter of a colored transparent pixel pattern arranged between the semiconductor substrate and the microlens, and arranged according to a preset rule for a plurality of colors corresponding to each of the plurality of photoelectric conversion elements;
A photosensitive transparent resin layer made of the same material as the microlens, between the color filter and the microlens,
With
The height of the microlens positioned on the color selected from among the plurality of colors constituting the colored transparent pixel pattern is different from the height of the other microlens,
By adjusting the film thickness of the photosensitive transparent resin layer located on the selected color and the film thickness of the photosensitive transparent resin layer located on a color different from the selected color, the micro It is characterized by changing the height of the lens.

In addition, in the method for manufacturing a color solid-state imaging device which is one embodiment of the present invention, a surface is partitioned into a plurality of pixels, and a photoelectric conversion element is disposed in each pixel, and the semiconductor substrate is disposed on the semiconductor substrate. A method of manufacturing a color solid-state imaging device comprising: a microlens for condensing incident light on each of the photoelectric conversion devices;
Providing on the semiconductor substrate a color filter of a colored transparent pixel pattern in which a plurality of colors are regularly arranged corresponding to each of the plurality of photoelectric conversion elements;
A step of patterning a photosensitive transparent resin layer on the color filter by photolithography,
Forming a photosensitive transparent resin layer to form a microlens on the photosensitive transparent resin layer, and patterning by a photolithography method to form a convex microlens pattern,
By adjusting the film thickness for each pixel of the photosensitive transparent resin layer, the height of the microlens positioned on the first color selected from the plurality of colors constituting the colored transparent pixel pattern is adjusted. The height of the microlens located on another color different from the first color is changed.

  According to the present invention, the thickness of the photosensitive transparent resin layer formed between the color filter of the colored transparent pixel pattern and the microlens is adjusted to be patterned for each color, for example, before forming the microlens. A film thickness difference can be provided. Accordingly, a color solid-state imaging device in which microlenses are formed at appropriate heights for each color can be easily provided.

It is sectional drawing explaining the structural example of the color solid-state image sensor using a micro lens. It is sectional drawing explaining the formation method of the photosensitive transparent resin layer formed into a film between a colored transparent pixel pattern and a micro lens. It is sectional drawing explaining the manufacturing method of the color solid-state image sensor which concerns on 1st Embodiment based on this invention. The top view explaining the photomask with a density gradation. It is a top view explaining an example of the photomask with a density gradation which concerns on embodiment based on this invention. It is sectional drawing explaining the other example of the manufacturing method of the color solid-state image sensor which concerns on 2nd Embodiment based on this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments.

(First embodiment)
As described above, the basic manufacturing process of a microlens includes a flow lens type that directly forms a lens shape and an etching transfer type from a lens mother mold. In the manufacturing method of a color solid-state imaging device according to the present invention, This method can also be selected. Since an etching process is unnecessary, it is desirable to manufacture a micro lens of a flow lens type, but a manufacturing method is selected depending on a pattern size and a micro lens shape.
In the flow lens type manufacturing method, the photosensitive transparent resin layer formed between the colored transparent pixel pattern and the microlens and the photosensitive transparent resin layer for forming the microlens are made of materials having the same optical characteristics. Is desirable.
1st Embodiment is an example in the case of manufacturing with the flow lens type which forms a lens shape directly.

FIG. 2 is a schematic cross-sectional view for explaining a method for forming a photosensitive transparent resin layer formed between the colored transparent pixel pattern and the microlens in the solid-state imaging device of the present embodiment. It implements in order of the process of-(c).
FIG. 2A is a schematic cross-sectional view before patterning a photosensitive transparent resin layer formed between a colored transparent pixel pattern of a color solid-state imaging device and a microlens.
That is, as shown in FIG. 2A, a plurality of photoelectric conversion elements 3 are regularly provided on a semiconductor substrate 2 such as silicon. A color filter 7 is provided on the light-receiving surface side surface of the solid-state imaging element pixel portion in which the plurality of photoelectric conversion elements 3 are arranged in a plane via a transparent flattening layer 5. The color filter 7 forms a colored transparent pixel pattern in which a plurality of colors are repeatedly arranged, and a plurality of color filters 7 are provided corresponding to the photoelectric conversion elements 3. A photosensitive transparent resin layer 8 is formed on the color filter 7 by coating.

  The formation of the photosensitive transparent resin layer 8 is, for example, imparting alkali solubility and photosensitivity to an acrylic transparent resin material, and using a spin coater, for example, the film thickness when dried is 0.1 μm or more and 1.0 μm or less. It coats so that it may become arbitrary film thickness. And after application | coating of the photosensitive transparent resin layer 8, it dries uniformly in a short time using a hotplate. Thereby, the photosensitive transparent resin layer 8 is formed on the color filter 7.

Next, as the exposure step, as shown in FIG. 2B, the photosensitive transparent resin layer 8 is patterned by a photolithography method. Hereinafter, an example using a positive photosensitive material will be described.
For the positive photosensitive transparent resin layer 8, a photomask having a different transmittance for each colored transparent pixel is used to adjust the height. At this time, since the color filter 7 of the colored transparent pixel pattern has a different film thickness for each color, the photosensitive transparent resin layer 8 also has a different film thickness at the time of film formation. Therefore, it is good also as an unexposed process using the photomask which made the light-shielding part the position corresponding to the part of the colored transparent pixel pattern in which the photosensitive transparent resin layer 8 becomes the thinnest. When patterning into a convex lens shape, a photomask having a density gradation in the pattern may be used.

  In the exposure process shown in FIG. 2B, the photomask 10 having a design in which the transmittance is different for each color of the colored transparent pixel is accurately aligned with respect to the position where the photosensitive transparent resin layer 8 is to be patterned. For example, the back surface of the photomask 10 is designed such that the parallel irradiation light 9 from the i-line stepper using light with a wavelength of 365 nm from the ultra-high pressure mercury lamp light source is designed to have different transmittance for each color of the colored transparent pixels. It exposes by irradiating from. The exposure conditions are determined by the film thickness and sensitivity of the photosensitive transparent resin layer 8 to be used, the developer conditions, and the like.

  Next, a development process is performed to form a patterned transparent resin layer 11 immediately after the development process, as shown in FIG. For the development processing, TMAH (tetramethylammonium hydroxide) or an amine-based organic alkali developer can be used. The development process of the photosensitive transparent resin layer 8 can be uniformly advanced by a spin development method or a paddle development method, and the other parts are dissolved while leaving the patterned transparent resin layer 11 corresponding to the photomask 10 after the development process. Remove. After the development process, it is uniformly dried in a short time using a hot plate.

FIG. 3 is a schematic cross-sectional view for explaining the flow lens type microlens manufacturing method of the solid-state imaging device of the present embodiment, which is performed in the order of the steps of FIGS.
FIG. 3A shows a state in which a transparent resin layer 14 to form a microlens is applied and formed on the patterned transparent resin layer 11 formed.

  The transparent resin layer 14 is formed by, for example, imparting alkali solubility, photosensitivity, and thermal reflow properties to an acrylic transparent resin material, and using a spin coater, for example, the film thickness when dried is 0.1 μm or more and 1.0 μm or less. It is carried out by coating so as to have an arbitrary film thickness in the range. In particular, the thermal reflow property is a performance necessary for obtaining a smooth microlens having a small surface roughness. However, since the microlens shape is changed by the thermal reflow, the degree of reflow is considered in accordance with the desired microlens shape. It is desirable to select materials. After the application of the transparent resin layer 14, it is uniformly dried in a short time using a hot plate.

  Next, as the exposure step, as shown in FIG. 3B, the photosensitive transparent resin layer 14 is patterned by photolithography. Hereinafter, an example using a positive photosensitive material will be described. For the positive type photosensitive transparent resin layer 14, a photomask 12 with a density gradation in which a pattern of the light shielding portion 13 provided with a density gradation corresponding to a region formed in a microlens shape is used.

  In the exposure process shown in FIG. 3B, the photomask 12 with density gradation is accurately aligned with the position of the transparent resin layer 14 to be patterned, for example, a wavelength of 365 nm from an ultrahigh pressure mercury lamp light source. Exposure is performed by irradiating the parallel irradiation light 9 from the i-line stepper using the light from the back surface of the photomask 12 with density gradation. The exposure conditions are determined by the film thickness and sensitivity of the photosensitive transparent resin layer 14 to be used, the developer conditions, and the like.

  Next, development processing is performed to form a microlens 20 having a transparent resin pattern immediately after the development processing, as shown in FIG. For the development processing, TMAH (tetramethylammonium hydroxide) or an amine-based organic alkali developer can be used. The development process of the transparent resin layer 8 can be uniformly advanced by a spin development method or a paddle development method, and the other portions except the microlens 20 of the transparent resin pattern immediately after the development process corresponding to the light shielding portion 13 of the photomask 12 are left. Is dissolved and removed.

  Next, the microlens 20 is formed by molding the microlens 20 having a transparent resin pattern by heat melting using the thermal reflow property of the material. At this time, the microlens shape can be controlled by optimizing the heat treatment conditions after the development processing. Therefore, it is desirable to set appropriate heat treatment conditions for forming the microlens into a desired shape. As described above, the flow lens type microlens can be formed in a relatively short process by using the photosensitivity and thermal reflow property of the transparent resin that is the material of the microlens.

Photomask microlens in the production of the solid-state imaging device of the present embodiment utilizes the example as shown in FIG. FIG. 4A shows the case of a normal binarized photomask 15, and FIG. 4B shows the case of a photomask 12 provided with density gradation.
When the photomask 12 provided with the density gradation shown in FIG. 4B is used, for example, the central part of each light shielding part pattern has the maximum light shielding density in the pattern area of the light shielding part 13 with density gradation. a light-shielding toward the periphery to the concentration gradation with light shielding portions pattern to decrease. By appropriately controlling the density gradation, it is possible to reproduce the film thickness following the gentle change in the exposure amount in the photolithography method and obtain a convex curved surface after development.

  The normal binarized photomask 15 has a pattern of the light-shielding portion 16 made of a light-shielding film such as metallic chromium on the surface of a substrate such as quartz or glass that has good transparency to exposure light. It is produced by a generally known method such as a method of separately forming a pattern. Further, in order to form the light-shielding portion 13 with density gradation of the photomask 12 provided with density gradation, a normal method for manufacturing a photomask with density gradation can be applied on the substrate. That is, in order to add density gradation, a method of providing a density gradient in the region by gradually changing the film thickness of a light-shielding metal film or the like, or light shielding such as dot (halftone dot) arrangement or line and space For example, a gray tone type method in which a density gradation is given to the average light-shielding density of each fine pattern region by changing the aggregate state of the fine patterns of the film can be applied.

  The mask pattern for forming the microlens is desirably provided with an appropriate density gradation so as to have a lens shape to be manufactured. 5A and 5B, an example of the photomask 12 of the mask patterns 121 and 122 (light-shielding portion pattern) in which the density gradation is provided by appropriately arranging the light-shielding region 18 and the light-transmissive region 19 in FIG. Show. For example, when the lens shape to be manufactured is different for each color of the colored transparent pixel, a pattern design corresponding to each is performed. By knowing the amount of film reduction with respect to the exposure amount of the photosensitive transparent resin layer 14, the exposure amount can be adjusted by designing the transmittance of the photomask, so that microlenses can be collectively formed under the same exposure conditions. It is desirable that the amount of film loss of the photosensitive transparent resin layer 14 is proportional to the exposure amount. The lens height can be appropriately adjusted by the transparent resin layer 11 for each colored transparent pixel.

Here, the colored transparent resin material constituting the color filter has a difference in light condensing property due to different optical characteristics such as refractive index for each color. For this reason, the film thickness of the photosensitive transparent resin layer is adjusted so that the microlens provided on the colored transparent pixel is formed with an appropriate film thickness for each color.
That is, according to the present embodiment, the microlens is adjusted by adjusting the film thickness so that, for example, the photosensitive transparent resin layer formed between the color filter of the colored transparent pixel pattern and the microlens is patterned for each color. A film thickness difference can be provided before formation.
As a result, for example, in the microlens formation process, even if the photomask is provided with density gradations of the same design for all colors, a color solid-state imaging device in which microlenses are formed at appropriate heights for each color can be simplified. Can be provided.
In addition, the photomask provided with the density gradation used for patterning of the photosensitive transparent resin layer formed between the colored transparent pixel pattern and the microlens is a thickness adjustment step, so that fine processing is unnecessary. In addition, since the photomask provided with the density gradation used in the microlens formation process does not have to be designed for each colored transparent pixel pattern, a high-quality color solid-state imaging device can be provided at a low cost.

(Second Embodiment)
Next, a second embodiment will be described with reference to the drawings. In addition, the same code | symbol is attached | subjected and demonstrated about the member similar to the said 1st Embodiment.
The second embodiment is an example in the case of manufacturing with an etching transfer type from a lens matrix.

FIG. 6 is a schematic cross-sectional view for explaining an example in which the microlens manufacturing process of the solid-state imaging device of the present embodiment includes an etching transfer type manufacturing process using a photomask with density gradation, and FIG. ) To (d) in the order of steps.
FIG. 6A is a schematic cross-sectional view before providing a microlens for a color solid-state imaging device, and has a configuration similar to that of FIG. That is, the photosensitive transparent resin layer 11 is patterned on the color filter 7 as described in FIG. In addition, since the transparent resin material which forms the photosensitive transparent resin layer 11 assumes the transcription | transfer by the dry etching mentioned later, the material excellent in the dry etching aptitude is desirable. For example, an acrylic transparent resin material can be used as the transparent resin material.

  Next, a photoresist material 21 which is a resin having alkali solubility and photosensitivity is uniformly applied on the patterned transparent resin layer 11 by a spin coater to form a photoresist layer 21. As the photoresist layer 21, an acrylic or novolac positive resist material is uniformly applied using a spin coater so that the dry film thickness is an arbitrary film thickness in the range of 0.1 μm to 1.0 μm. Drying is performed at a low temperature of 100 ° C. or lower.

  Next, as an exposure step, as shown in FIG. 6B, the photoresist layer 21 is patterned by photolithography. Here, a photomask 12 with a density gradation in which a pattern of the light shielding portion 13 provided with a density gradation corresponding to a region to be left in the microlens shape is prepared in advance for the positive photoresist layer 21. Keep it.

  As for the mask pattern for forming the microlens matrix, it is desirable to provide an appropriate density gradation for each color of the colored transparent pixels, as described in FIG. As a result, a microlens matrix can be formed in an appropriate lens shape for each color under the same exposure conditions. The lens height can be appropriately adjusted by the transparent resin layer 11 for each colored transparent pixel.

  In the exposure step shown in FIG. 6B, the photomask 12 with density gradation is accurately aligned with the position where the photoresist layer 21 is to be patterned. For example, the wavelength of 365 nm from the ultrahigh pressure mercury lamp light source is used. Exposure is performed by irradiating parallel irradiation light 9 from an i-line stepper using light from the back surface of the photomask 12 with density gradation. The exposure conditions are determined by the film thickness and sensitivity of the photoresist layer 21 to be used, the developer conditions, and the like.

  Next, development processing is performed to form a transfer microlens pattern 22 using a photoresist as shown in FIG. For development, TMAH (tetramethylammonium hydroxide) or an amine-based organic alkali developer can be used. The development process of the photoresist layer 21 can be uniformly progressed by the spin development or paddle development method, and other methods such as leaving the transfer microlens pattern 22 having a convex shape corresponding to the light shielding portion 13 of the photomask 12 are left. This part is dissolved and removed.

Next, the transfer microlens pattern 22 formed on the patterned transparent resin layer 11 is etched and transferred to the transparent resin layer 11 as an etching resist to form the microlens 6 as shown in FIG. . As an etching method, dry etching using a fluorine-based gas such as C ₃ F ₈ can be performed. The cross-sectional shape of the microlens 6 transferred by dry etching is basically faithful to the transfer microlens pattern 22 used as a lens matrix, but a photoresist layer 21 that is a material of the transfer microlens pattern 22. And the transparent resin layer 11 that is the material of the microlens 6 are changed by various influences depending on the etching rate ratio under the actual dry etching conditions and the etching depth, and the conditions are adjusted in each case.

  The above-described transfer type microlens 6 uses the lens matrix 22 obtained from the photoresist layer 21 that has a relatively high exposure sensitivity and can form a fine pattern with high accuracy, and for each color of the colored transparent pixels with high accuracy. A microlens can be formed in an appropriate lens height and lens shape.

DESCRIPTION OF SYMBOLS 1 Color solid-state image sensor 2 Semiconductor substrate 3 Photoelectric conversion element 4 Light-receiving surface side surface 5 Transparent planarization layer 6 Micro lens 7 Color filter (colored transparent pixel pattern)
8 Photosensitive transparent resin layer 8 Transparent resin layer (photosensitive)
9 Irradiation light 10 Photomask (Design with different transmittance for each color of colored transparent pixels)
11 Patterned transparent resin layer (for film thickness adjustment)
12 Photomask (with density gradation)
13 Light shielding part 14 Photosensitive transparent resin layer (for microlenses)
15 Photomask (binarization)
16 light shielding part 17 light transmitting part 18 light shielding area 19 light transmitting area 20 microlens 21 photoresist layer 22 microlens pattern for transfer (lens matrix)
51 2nd transparent planarization layer 121,122 mask pattern

Claims (5)

A semiconductor substrate that is partitioned into a plurality of pixels, and a photoelectric conversion element is disposed in each pixel;
A plurality of microlenses arranged on the semiconductor substrate to collect incident light on each of the photoelectric conversion elements;
A color filter of a colored transparent pixel pattern arranged between the semiconductor substrate and the microlens, and arranged according to a preset rule for a plurality of colors corresponding to each of the plurality of photoelectric conversion elements;
A photosensitive transparent resin layer made of the same material as the microlens, between the color filter and the microlens,
With
The height of the microlens positioned on the color selected from among the plurality of colors constituting the colored transparent pixel pattern is different from the height of the other microlens,
By adjusting the film thickness of the photosensitive transparent resin layer located on the selected color and the film thickness of the photosensitive transparent resin layer located on a color different from the selected color, the micro A color solid-state imaging device characterized by changing the height of a lens.   The film thickness of the said photosensitive transparent resin layer was adjusted so that the difference in the condensing property of the said micro lens by the optical characteristic for every color of the said color filter might be different. Color solid-state imaging device.   The color solid-state imaging device according to claim 2, wherein the upper layer of the photosensitive transparent resin layer is the microlens. A semiconductor substrate having a surface partitioned into a plurality of pixels and a photoelectric conversion element disposed on each pixel; and a microlens disposed on the semiconductor substrate and collecting incident light on each of the photoelectric conversion elements. A method for producing a color solid-state imaging device comprising:
Providing a color filter of a colored transparent pixel pattern in which a plurality of colors are regularly arranged corresponding to each of the plurality of photoelectric conversion elements on the semiconductor substrate;
A step of patterning a photosensitive transparent resin layer on the color filter by photolithography,
Forming a photosensitive transparent resin layer to form a microlens on the photosensitive transparent resin layer, and patterning by a photolithography method to form a convex microlens pattern,
By adjusting the film thickness for each pixel of the photosensitive transparent resin layer, the height of the microlens positioned on the first color selected from the plurality of colors constituting the colored transparent pixel pattern is adjusted. A method of manufacturing a color solid-state imaging device, wherein the height of the microlens positioned on another color different from the first color is changed.   5. The method of manufacturing a color solid-state imaging device according to claim 4, wherein a photomask provided with density gradation is used for patterning by photolithography.

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