JP2017030266A - Method for manufacturing microdevice - Google Patents
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- JP2017030266A JP2017030266A JP2015153289A JP2015153289A JP2017030266A JP 2017030266 A JP2017030266 A JP 2017030266A JP 2015153289 A JP2015153289 A JP 2015153289A JP 2015153289 A JP2015153289 A JP 2015153289A JP 2017030266 A JP2017030266 A JP 2017030266A
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Abstract
Description
本発明は、積層ウェハを用いたマイクロデバイスの製造方法に関する。 The present invention relates to a method for manufacturing a microdevice using a laminated wafer.
センサや液体吐出ヘッドなどに代表されるＭＥＭＳ（Ｍｉｃｒｏ Ｅｌｅｃｔｏｒｏ Ｍｅｃｈａｎｉｃａｌ Ｓｙｓｔｅｍ：微小電気機械）デバイスの製造においては、複数のウェハの積層構成が用いられることがある。例えば加速度センサなどにおいては、基板の積層構成がデバイス構造の真空封止や構造体の支持のために用いられることがある。また、液体吐出ヘッドや圧力センサなどにおいては、積層されたウェハ自体が構造体を備えている場合もある。この場合、穴や溝のような、完成時に何かしらの機能を果す構造物が設けられたウェハ同士が接合されるので、ウェハが薄厚であるほど破損の懸念が高まり、歩留まりも低減しやすい。 In manufacturing a MEMS (Micro Electro Mechanical System) device typified by a sensor or a liquid discharge head, a stacked configuration of a plurality of wafers may be used. For example, in an acceleration sensor or the like, a laminated structure of a substrate is sometimes used for vacuum sealing of a device structure or supporting a structure. In a liquid discharge head, a pressure sensor, or the like, the stacked wafers themselves may have a structure. In this case, wafers provided with structures that perform some function when completed, such as holes and grooves, are bonded to each other. Therefore, the thinner the wafer, the greater the risk of damage and the easier it is to reduce the yield.
特許文献１には、３枚のウェハを積層接合した後、中間のウェハを機械加工によって積層方向に切断することにより、２層構造を有する２つのウェハを同時に生成する方法が記載されている。特許文献１に記載された方法によれば、専用の支持基板などを用いなくても、２層以上の積層ウェハを、歩留まりの高い状態で効率的に製造することができる。 Patent Document 1 describes a method of simultaneously generating two wafers having a two-layer structure by laminating and bonding three wafers and then cutting an intermediate wafer in the stacking direction by machining. According to the method described in Patent Literature 1, two or more laminated wafers can be efficiently manufactured in a high yield state without using a dedicated support substrate or the like.
しかしながら、特許文献１に記載の方法においては、切断処理を機械的な加工で行うため、ウェハの欠けや割れが発生することがある。この場合、ウェハ内に穴、溝、キャビティのような微細な構造物が予め形成されていると、これら構造物まで破損してしまう懸念が生じる。また、特許文献１に記載の方法では、切断後の切断面を研磨し洗浄することを前提としているが、ウェハ内部に構造物が予め形成されている場合には、研磨や洗浄の工程を介して、内部の構造物をダメージのない状態で表面に高精度に露出させるのは難しい。 However, in the method described in Patent Document 1, since the cutting process is performed by mechanical processing, chipping or cracking of the wafer may occur. In this case, if fine structures such as holes, grooves, and cavities are formed in the wafer in advance, there is a concern that these structures may be damaged. Further, in the method described in Patent Document 1, it is assumed that the cut surface after cutting is polished and cleaned. However, when a structure is formed in advance in the wafer, a polishing or cleaning process is performed. Thus, it is difficult to expose the internal structure on the surface with no damage and with high accuracy.
本発明は上記問題点を解決するために成されたものである。よってその目的とするところは、厚薄の積層ウェハを用いたマイクロデバイスを、歩留まりの高い状態で効率的に製造することである。 The present invention has been made to solve the above problems. Therefore, the object is to efficiently manufacture a micro device using a thin laminated wafer in a high yield state.
そのために本発明は、（第１の基板と第２の基板が積層されて構成されるマイクロデバイスの製造方法であって、２つの前記第１の基板を、仮接着層を介して、互いの面を接着する仮接着工程と、前記第１の基板における前記面とは反対の面に、前記第２の基板を接合し、前記第１の基板と前記第２の基板とを積層する積層工程と、前記仮接着層を剥離する剥離工程とを有することを特徴とする。 To that end, the present invention provides a microdevice manufacturing method configured by laminating a first substrate and a second substrate, wherein the two first substrates are connected to each other via a temporary adhesive layer. A temporary bonding step of bonding surfaces, and a stacking step of bonding the second substrate to a surface opposite to the surface of the first substrate, and stacking the first substrate and the second substrate And a peeling step for peeling the temporary adhesive layer.
本発明によれば、機械的な切断処理を施すことなく、２つの積層基板を分離することができるので、基板内の構造物を破損することなく高精度に露出させることができる。結果、従来に比べ、目的の製造物を歩留まりの高い状態で製造することが可能となる。 According to the present invention, since the two laminated substrates can be separated without performing a mechanical cutting process, the structure in the substrate can be exposed with high accuracy without being damaged. As a result, it becomes possible to manufacture the target product with a higher yield than in the past.
以下、図面を参照しながら、本発明に使用可能な積層ウェハ構造を有する液体吐出ヘッドの製造方法について具体的に説明する。 Hereinafter, a manufacturing method of a liquid discharge head having a laminated wafer structure that can be used in the present invention will be specifically described with reference to the drawings.
（第１の実施形態）
図１（ａ）〜（ｈ）は、第１の実施形態における液体吐出ヘッド用の積層ウェハの製造工程図である。通常、円形状平面のウェハには複数のマイクロデバイスがレイアウトされるが、ここでは、１つのマイクロデバイスに相当する領域に着目し、その断面図を示している。
(First embodiment)
FIGS. 1A to 1H are manufacturing process diagrams of a laminated wafer for a liquid discharge head in the first embodiment. In general, a plurality of micro devices are laid out on a circular plane wafer. Here, attention is paid to a region corresponding to one micro device, and a cross-sectional view thereof is shown.
まず、図１（ａ）に示すように、第１の基板１０１を２つ（２枚）用意する。次に、図１（ｂ）に示すように、これら２つの第１の基板１０１を、仮接着層１０２を介して、互いの面を接着する。仮接着層１０２は後に剥離することを前提とする層であり、フォトリソグラフィーによるパターン形成や、エッチング、ウェハ接合、洗浄等の工程には耐えるが、所定の剥離工程では容易に剥離可能な接着剤で形成する。仮接着層は後で剥離してしまうため比較的安価な材料であることが好ましい。一例としては熱可塑性樹脂からなる基板固定用のワックス材や各種レジスト材、加熱により自己発泡する接着シートなどが挙げられる。第１の基板１０１については特に限定されるものではないが、一般的には、１００μｍ以上で６００μｍ以下の厚みを有するシリコン基板が好ましい。特に、８インチのシリコン基板であることが好ましい。この際、取り扱い時の破損を回避するため、例えば１０００μｍ程度の厚みを有する第１の基板１０１を用意し、図１（ｂ）のように接着した後、６００μｍ以下の目的の厚みまで両側を研削したり研磨したりしてもよい。 First, as shown in FIG. 1A, two (two) first substrates 101 are prepared. Next, as shown in FIG. 1B, these two first substrates 101 are bonded to each other through a temporary adhesive layer 102. The temporary adhesive layer 102 is a layer that is supposed to be peeled off later, and can withstand processes such as pattern formation by photolithography, etching, wafer bonding, and cleaning, but can be easily peeled off in a predetermined peeling process. Form with. The temporary adhesive layer is preferably a relatively inexpensive material because it is peeled off later. Examples thereof include a wax material for fixing a substrate made of a thermoplastic resin, various resist materials, and an adhesive sheet that self-foams when heated. The first substrate 101 is not particularly limited, but in general, a silicon substrate having a thickness of 100 μm or more and 600 μm or less is preferable. In particular, an 8-inch silicon substrate is preferable. At this time, in order to avoid damage at the time of handling, for example, a first substrate 101 having a thickness of about 1000 μm is prepared, and after bonding as shown in FIG. 1B, both sides are ground to a target thickness of 600 μm or less. Or may be polished.
次いで、図１（ｃ）および（ｄ）に示すように、第１の基板１０１のそれぞれに液体供給ホール１０３となる貫通穴を順番に形成する。具体的には、フォトレジストを塗布した後に穴部が形成されたマスクを介して露光し、ウェットエッチング、ドライエッチング、またはサンドブラストのような機械的加工によって、穴部の位置に液体供給ホール１０３を形成する。この際、仮接着層１０２は、ウェハを吸着する際のリークを防止したり、片側の第１の基板１０１に対する加工の影響がもう片側に及ばないようにするためのストップ層の役割を果たしたりする。 Next, as shown in FIGS. 1C and 1D, through holes to be the liquid supply holes 103 are formed in order on each of the first substrates 101. Specifically, after applying a photoresist, exposure is performed through a mask in which a hole is formed, and the liquid supply hole 103 is formed at the hole by mechanical processing such as wet etching, dry etching, or sand blasting. Form. At this time, the temporary adhesive layer 102 serves as a stop layer for preventing leakage when adsorbing a wafer or preventing the influence of processing on the first substrate 101 on one side from affecting the other side. To do.
次に、図１（ｅ）に示すように、第２の基板１００を２つ用意する。第２の基板１００は、流路部材１０７と素子基板１０９が積層されて成り、流路部材１０７には、液滴の出口となる吐出口１０６と吐出口１０６まで液体を導く流路１０５が形成されている。但し、これら吐出口１０６および流路１０５は、必ずしもこの段階で形成されている必要はなく、後の工程で形成することもできる。一方、素子基板１０９には、個々の流路１０５に接続し液体を供給する溝状の供給路１０８、吐出口１０６から液体を吐出させるエネルギを発生させるためのエネルギ発生素子１０４、および不図示の電気配線などが形成されている。 Next, as shown in FIG. 1E, two second substrates 100 are prepared. The second substrate 100 is formed by laminating a flow path member 107 and an element substrate 109, and the flow path member 107 is formed with a discharge port 106 serving as a liquid droplet outlet and a flow channel 105 that guides liquid to the discharge port 106. Has been. However, the discharge port 106 and the flow path 105 are not necessarily formed at this stage, and can be formed in a later process. On the other hand, on the element substrate 109, a groove-like supply path 108 connected to each flow path 105 to supply liquid, an energy generating element 104 for generating energy for discharging liquid from the discharge port 106, and an unillustrated Electrical wiring and the like are formed.
そして、これら２つの第２の基板１００を、図１（ｆ）に示すように、先に接着した第１の基板１０１の仮接着層１０２側の面（接着面）とは反対の面にそれぞれに接合する。これによって、第１の基板と第２の基板とが積層される。この接合には、様々な手法を用いることが可能であるが、仮接着層１０２への熱ダメージを考慮すると、比較的低温での接着が可能なＵＶ硬化樹脂や熱硬化樹脂からなる接着剤１１０を用いることが好ましい。図１（ｆ）に示す工程より、仮接着層１０２を挟む二組の積層基板１１１が形成される。 Then, as shown in FIG. 1 (f), these two second substrates 100 are respectively placed on surfaces opposite to the surfaces (adhesion surfaces) of the first substrate 101 bonded first to the temporary adhesion layer 102 side. To join. Thereby, the first substrate and the second substrate are stacked. Various methods can be used for this bonding, but considering thermal damage to the temporary adhesive layer 102, an adhesive 110 made of a UV curable resin or a thermosetting resin that can be bonded at a relatively low temperature. Is preferably used. From the step shown in FIG. 1F, two sets of laminated substrates 111 sandwiching the temporary adhesive layer 102 are formed.
続いて、図１（ｇ）に示すように、仮接着層１０２を２つの第１の基板１０１より剥離し、２つの積層基板１１１を分離する。仮接着層１０２が熱可塑性樹脂である場合は、構造物全体を樹脂の軟化温度以上に加熱し双方の基板をスライド剥離させればよい。また、仮接着層１０２が特定の溶剤に溶解する場合には、当該溶剤に浸漬して溶解剥離すればよい。さらに、仮接着剤が自己発泡タイプの接着シートの場合には、指定の温度に加熱した後、そのまま剥離してもよい。 Subsequently, as illustrated in FIG. 1G, the temporary adhesive layer 102 is peeled from the two first substrates 101 to separate the two laminated substrates 111. In the case where the temporary adhesive layer 102 is a thermoplastic resin, the entire structure may be heated to a temperature equal to or higher than the softening temperature of the resin and both the substrates may be slid and peeled. Further, when the temporary adhesive layer 102 is dissolved in a specific solvent, the temporary adhesive layer 102 may be immersed in the solvent and dissolved and peeled off. Furthermore, when the temporary adhesive is a self-foaming type adhesive sheet, it may be peeled off as it is after being heated to a specified temperature.
その後、必要に応じて仮接着層１０２の残渣を洗浄し、第１の基板１０１と第２の基板１００を接合する接着剤１１０の最終硬化処理等を行うことにより、図１（ｈ）に示すような、二組の液体吐出ヘッド基板が完成する。 Thereafter, the residue of the temporary adhesive layer 102 is washed as necessary, and a final curing process or the like of the adhesive 110 that joins the first substrate 101 and the second substrate 100 is performed, as shown in FIG. Such two sets of liquid discharge head substrates are completed.
以上説明した本実施形態によれば、第１の基板１０１を２層重ねた厚みと強度のもとで、液体供給ホール１０３の形成やエッチング、更に第２の基板１００の接着のような工程を行うことができる。そして、２つの積層基板１１１を分離するために仮接着層１０２に対し特許文献１に記載されているような機械的な切断処理を施さなくてよいので、液体供給ホール１０３のような構造物を破損することを抑制できる。さらに仮接着層１０２の剥離後には第１の基板の底面を高精度に露出させることができる。結果、従来に比べ、目的のマイクロデバイスを歩留まりの高い状態で製造することが可能となる。 According to the present embodiment described above, processes such as formation and etching of the liquid supply hole 103 and adhesion of the second substrate 100 are performed based on the thickness and strength of the two layers of the first substrate 101 stacked. It can be carried out. In order to separate the two laminated substrates 111, it is not necessary to perform a mechanical cutting process as described in Patent Document 1 on the temporary adhesive layer 102. Therefore, a structure such as the liquid supply hole 103 is provided. It can control that it breaks. Further, the bottom surface of the first substrate can be exposed with high accuracy after the temporary adhesive layer 102 is peeled off. As a result, it becomes possible to manufacture the target microdevice with a higher yield than in the past.
以下、本実施形態に基づいて実際に液体吐出ヘッドを製造した場合の具体例を説明する。 Hereinafter, a specific example when a liquid discharge head is actually manufactured based on this embodiment will be described.
まず、図１（ａ）に示すように、第１の基板１０１として、厚さ３００μｍのシリコンウェハを２枚用意した。次に、Ｄｙｎａｔｅｘ社製のシート状仮止め接着剤（Ｗａｆｅｒ Ｇｒｉｐ）をこれら２枚の第１の基板１０１で挟み、図１（ｂ）のような仮接着層１０２を形成した。そして、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用いて、減圧状態において１２０℃で接合し、第１の基板１０１の互いの面を、仮接着層１０を介して接着した。 First, as shown in FIG. 1A, two silicon wafers having a thickness of 300 μm were prepared as the first substrate 101. Next, a sheet-like temporary adhesive (Wafer Grip) manufactured by Dynatex was sandwiched between the two first substrates 101 to form a temporary adhesive layer 102 as shown in FIG. Then, using a bonding apparatus (EVG520IS) manufactured by EVG, bonding was performed at 120 ° C. in a reduced pressure state, and the surfaces of the first substrates 101 were bonded via the temporary bonding layer 10.
次に、片側の第１の基板１０１の表面に、東京応化工業社製のフォトレジスト（ＴＨＭＲ−ｉＰ５７００ＨＲ）を塗布し、フォトマスクを介して露光および現像することにより、レジストパターンを形成した。そしてその後、ＳＰＰテクノロジーズ社製ドライエッチング装置（ＡＳＥ−ＰＥＧＡＳＵＳ）を用い、ボッシュプロセスによるドライエッチング加工を施すことにより、上記穴の位置に貫通穴となる液体供給ホール１０３を形成した（図１（ｃ））。更に、もう片側の面にも上記と同様の処理を施し、同様に液体供給ホール１０３を形成した（図１（ｄ））。ドライエッチングを行う際、仮接着層１０２が配備されているので、吸着リークは確認されなかった。また、以上の工程は、厚さ３００μｍのシリコン基板を２枚重ねた状態、すなわち６００μｍ以上の厚みの基板に対して行っているので、その強度は１枚の場合よりも十分強く取り扱い易く欠けや割れなども確認されなかった。 Next, a photoresist (THMR-iP5700HR) manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied to the surface of the first substrate 101 on one side, and exposed and developed through a photomask to form a resist pattern. Then, by using a dry etching apparatus (ASE-PEGASUS) manufactured by SPP Technologies, a liquid supply hole 103 serving as a through hole is formed at the position of the hole by performing dry etching processing by a Bosch process (FIG. 1 (c) )). Further, the same processing as described above was performed on the other surface, and the liquid supply hole 103 was formed in the same manner (FIG. 1D). At the time of dry etching, since the temporary adhesive layer 102 is provided, no adsorption leak was confirmed. Further, since the above steps are performed on a state in which two silicon substrates having a thickness of 300 μm are stacked, that is, a substrate having a thickness of 600 μm or more, the strength thereof is sufficiently stronger than that of a single substrate and easy to handle. Neither cracking nor the like was confirmed.
次いで、第２の基板１００を用意し、ＵＶ硬化型の接着剤（株アデカ製：ＫＲ−８２７）をスクリーン印刷により塗布した後、接着剤１１０にＵＶ光を照射し重合反応を開始させた。本実施例において、ＵＶ光の照射は、ウシオ電機製プロキシミティ露光装置（ＵＸ−３０００）にｉ線（３６５ｎｍ）バンドパスフィルターを装着して行った。 Next, a second substrate 100 was prepared, a UV curable adhesive (manufactured by Adeka Co., Ltd .: KR-827) was applied by screen printing, and then the adhesive 110 was irradiated with UV light to initiate a polymerization reaction. In this example, irradiation with UV light was performed by attaching an i-line (365 nm) bandpass filter to a proximity exposure apparatus (UX-3000) manufactured by USHIO.
次に、図１（ｄ）の状態の第１の基板１０１の片面に接着剤を塗布した第２の基板１００を当接させ、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用いて、室温にて１０００Ｎの圧力をかけて両者を接合した。接合は、先に照射したＵＶ光により接着剤の硬化が進まないうちに速やかに実施した。そして、もう片側の面にも同様の接合を行った。これにより、図１（ｆ）のような積層構造体が得られた。この際、接合用の冶具を工夫すれば、両方の第１の基板１０１に対し、第２の基板１００を同時に接合することも可能である。 Next, the second substrate 100 coated with an adhesive is brought into contact with one surface of the first substrate 101 in the state of FIG. 1 (d), and at room temperature using a bonding apparatus (EVG520IS) manufactured by EVG. Both were joined by applying a pressure of 1000 N. Bonding was performed promptly before the curing of the adhesive proceeded with the UV light previously irradiated. And the same joining was performed also on the surface of the other side. Thereby, the laminated structure as shown in FIG. 1F was obtained. At this time, if the bonding jig is devised, the second substrate 100 can be bonded to both the first substrates 101 at the same time.
その後、上記積層構造体に対し、１００℃環境で１２０分の熱キュアを行うことにより、接着剤１１０（ＫＲ−８２７）を完全に硬化させた。接着剤１１０は完全に硬化するが仮接着層１０２には変化が現れないような、それぞれの接着剤の材料と熱キュア時の温度を予め定めておいた。よってこの際、仮接着層１０２に変化はなく、ずれや剥がれは確認されなかった。 Then, the adhesive 110 (KR-827) was completely cured by performing thermal curing for 120 minutes in a 100 ° C. environment on the laminated structure. The material of each adhesive and the temperature at the time of heat curing were determined in advance so that the adhesive 110 was completely cured but the temporary adhesive layer 102 did not change. Therefore, at this time, there was no change in the temporary adhesive layer 102, and displacement and peeling were not confirmed.
次いで、１５０℃のホットプレート上で仮接着層１０２を軟化させた。そして、図４に示すように、２つの積層基板１１１を互いにスライドさせることにより、それぞれの第１の基板１０１より仮接着層１０２を剥離した。その後、それぞれの積層基板１１１を９５℃に過熱された専用の洗浄液に浸漬し、さらにＩＰＡ（イソプロピルアルコール）でリンスすることにより、接合面に残っていた仮接着層１０２を完全に除去した。以上により、液体吐出ヘッド用のマイクロデバイスとなる積層基板１１１を２つ同時に得ることができた。 Next, the temporary adhesive layer 102 was softened on a hot plate at 150 ° C. Then, as shown in FIG. 4, the temporary adhesive layer 102 was peeled from each of the first substrates 101 by sliding the two laminated substrates 111 to each other. Thereafter, each laminated substrate 111 was immersed in a dedicated cleaning liquid heated to 95 ° C. and rinsed with IPA (isopropyl alcohol), whereby the temporary adhesive layer 102 remaining on the bonding surface was completely removed. As described above, two laminated substrates 111 to be microdevices for the liquid discharge head could be obtained simultaneously.
（第２の実施形態）
本実施形態においても第１の実施形態と同様、２つの基板を積層させた構成の液体吐出ヘッドを製造する例を用いて説明を行う。
(Second Embodiment)
In this embodiment as well, as in the first embodiment, an explanation will be given using an example of manufacturing a liquid discharge head having a configuration in which two substrates are stacked.
図２（ａ）〜（ｈ）は、本実施形態における液体吐出ヘッド用の積層ウェハの製造工程図である。第１の実施形態と同様、１つのマイクロデバイスに相当する領域についての断面図を示している。 2A to 2H are manufacturing process diagrams of a laminated wafer for a liquid discharge head in the present embodiment. As in the first embodiment, a cross-sectional view of a region corresponding to one micro device is shown.
まず、図２（ａ）に示すように、第１の基板２０１を２つ用意する。第１の基板２０１は後の素子基板となる領域であり、エネルギ発生素子２０４のほか、後に液体供給路となる凹部２０７および不図示の電気配線などが形成されている。 First, as shown in FIG. 2A, two first substrates 201 are prepared. The first substrate 201 is a region to be a subsequent element substrate. In addition to the energy generating element 204, a recess 207 to be a liquid supply path later, an electric wiring (not shown), and the like are formed.
そして、これら第１の基板２０１を、互いの面（互いのエネルギ発生素子２０４）を対向させるように配置し、仮接着層２０２を介して接着する。この際、図２（ｂ）に示すように、仮接着層２０２の接着剤は、第１の基板２０１の凹部２０７にも充填される。なお、接着剤については第１の実施形態と同じものを用いることができる。第１の基板２０１については、第１の実施形態と同様、１００〜１０００μｍ程度の厚みを有するシリコン基板が有用であるが、目的よりも厚みのある状態で用意し、接着してから目的の厚みになるまで研削や研磨を行ってもよい。シリコン基板は、８インチのシリコン基板であることが好ましい。 Then, these first substrates 201 are arranged so that their surfaces (mutual energy generating elements 204) face each other, and are bonded via a temporary adhesive layer 202. At this time, as shown in FIG. 2B, the adhesive of the temporary adhesive layer 202 is also filled in the recess 207 of the first substrate 201. Note that the same adhesive as in the first embodiment can be used. As for the first substrate 201, as in the first embodiment, a silicon substrate having a thickness of about 100 to 1000 μm is useful. Grinding or polishing may be performed until. The silicon substrate is preferably an 8-inch silicon substrate.
次いで、図２（ｃ）に示すように、第１の基板２０１のそれぞれに液体供給路２０８を形成する。形成方法は第１の実施形態と同様でよい。すなわち、フォトレジストを塗布した後に穴パターンが形成されたフォトマスクを介して露光し、ウェットエッチング、ドライエッチング、またはサンドブラストのような機械的加工によって、穴部に接続する位置に液体供給路２０８を形成する。この際、仮接着層２０２は、ウェハを吸着する際のリークを防止するなど、両側の第１の基板２０１に対する加工が互いに影響しないようにするためのストップ層の役割を果している。 Next, as illustrated in FIG. 2C, the liquid supply path 208 is formed in each of the first substrates 201. The formation method may be the same as in the first embodiment. That is, after applying a photoresist, exposure is performed through a photomask in which a hole pattern is formed, and the liquid supply path 208 is connected to the hole by a mechanical process such as wet etching, dry etching, or sand blasting. Form. At this time, the temporary adhesive layer 202 serves as a stop layer for preventing processing on the first substrate 201 on both sides from affecting each other, for example, preventing leakage when adsorbing a wafer.
次に、図２（ｄ）に示すように、第２の基板２００を２つ用意する。本実施形態における第２の基板２００は、液体供給路２０８に液体を供給するための液体供給ホール２０３が予め形成されている。但し、液体供給ホール２０３は、必ずしもこの段階で形成されている必要はなく、後の工程で形成することもできる。 Next, as shown in FIG. 2D, two second substrates 200 are prepared. In the second substrate 200 in the present embodiment, a liquid supply hole 203 for supplying a liquid to the liquid supply path 208 is formed in advance. However, the liquid supply hole 203 is not necessarily formed at this stage, and can be formed in a later process.
そして、これら２つの第２の基板２００を、図２（ｅ）に示すように、先に接着した第１の基板１０１のそれぞれに接合する。この接合についても第１の実施形態と同様、仮接着層２０２で用いた材料よりも低温で接着可能なＵＶ硬化樹脂や熱硬化樹脂からなる接着剤２１０を用いる。このようにして、第１の基板２０１と第２の基板２００とを積層する。その後、図２（ｆ）に示すように、仮接着層２０２を２つの第１の基板２０１より剥離し、２つの積層基板２１１を分離する。第１の実施形態と同様、仮接着層２０２が熱可塑性樹脂である場合は、構造物全体を樹脂の軟化温度以上に加熱し双方の基板をスライド剥離させればよい。また、特定の溶剤に溶解するのであれば当該溶剤に浸漬して溶解剥離すればよい。さらに、仮接着剤が自己発泡タイプの接着シートの場合には、指定の温度に加熱することでそのまま剥離すればよい。 Then, as shown in FIG. 2E, these two second substrates 200 are bonded to each of the first substrates 101 bonded previously. Also for this bonding, as in the first embodiment, an adhesive 210 made of a UV curable resin or a thermosetting resin that can be bonded at a lower temperature than the material used for the temporary adhesive layer 202 is used. In this way, the first substrate 201 and the second substrate 200 are stacked. After that, as shown in FIG. 2F, the temporary adhesive layer 202 is peeled off from the two first substrates 201, and the two laminated substrates 211 are separated. Similar to the first embodiment, when the temporary adhesive layer 202 is a thermoplastic resin, the entire structure may be heated to a temperature equal to or higher than the softening temperature of the resin and both substrates may be slid and peeled off. Moreover, if it melt | dissolves in a specific solvent, what is necessary is just to immerse in the said solvent and to melt | dissolve and peel. Furthermore, when the temporary adhesive is a self-foaming type adhesive sheet, it may be peeled off as it is by heating to a specified temperature.
その後、それぞれの積層基板２１１に対し、必要に応じて仮接着層２０２の残渣の洗浄、および接着剤２１０の最終硬化処理等を行った後、第１の基板２０１の側に、図２（ｇ）に示すように、流路部材２０５を積層する。流路部材２０５は、液体供給路２０８から供給された液体をエネルギ発生素子２０４の位置まで導くための流路と、エネルギ発生素子２０４に対応する位置に配備され液滴の出口となる吐出口２０６とを備えているが、これら構造体は積層後に形成してもよい。以上により、図２（ｈ）に示すような、２組の液体吐出ヘッド基板が完成する。 Thereafter, after cleaning the residue of the temporary adhesive layer 202 and the final curing treatment of the adhesive 210 as necessary, each laminated substrate 211 is moved to the first substrate 201 side, as shown in FIG. ), The flow path member 205 is laminated. The flow path member 205 includes a flow path for guiding the liquid supplied from the liquid supply path 208 to the position of the energy generation element 204 and a discharge port 206 that is disposed at a position corresponding to the energy generation element 204 and serves as an outlet of liquid droplets. These structures may be formed after lamination. Thus, two sets of liquid discharge head substrates as shown in FIG. 2H are completed.
なお、以上では、積層基板２１１を分離した後に、それぞれの積層基板２１１に対し、接着剤の最終硬化処理や流路部材の積層処理を行ったが、この順番は特に限定されるものではない。図２（ｅ）で示すように、２つの積層基板２１１が仮接着されている状態で、接着剤２１０の最終硬化処理を行ったり流路部材２０５の積層処理を行ったりすることもできる。 In the above description, after separating the laminated substrates 211, the final curing process of the adhesive and the laminating process of the flow path member are performed on the respective laminated substrates 211, but this order is not particularly limited. As shown in FIG. 2E, the final curing process of the adhesive 210 and the lamination process of the flow path member 205 can be performed in a state where the two laminated substrates 211 are temporarily bonded.
以上説明した本実施形態によれば、第１の基板２０１を２層重ねた厚みと強度のもとで、液体供給路２０８の形成やエッチング、更に第２の基板２００の接着のような工程を行うことができる。そして、２つの積層基板２１１を分離するために仮接着層２０２に対し特許文献１に記載されているような機械的な切断処理を施さなくてよいので、液体供給路２０８のような構造物を破損することを抑制できる。さらに仮接着層２０２の剥離後には第１の基板の表面を高精度に露出させることができ、エネルギ発生素子２０４や凹部２０７のような構造物が破損されることも抑制できる。結果、従来に比べ、目的の製造物を歩留まりの高い状態で製造することが可能となる。 According to the present embodiment described above, processes such as formation and etching of the liquid supply path 208 and adhesion of the second substrate 200 are performed based on the thickness and strength of the two layers of the first substrate 201 stacked. It can be carried out. In order to separate the two laminated substrates 211, it is not necessary to perform a mechanical cutting process as described in Patent Document 1 on the temporary adhesive layer 202. It can control that it breaks. Furthermore, after the temporary adhesive layer 202 is peeled off, the surface of the first substrate can be exposed with high accuracy, and damage to structures such as the energy generating element 204 and the recess 207 can be suppressed. As a result, it becomes possible to manufacture the target product with a higher yield than in the past.
以下、本実施形態に基づいて実際に液体吐出ヘッドを製造した場合の具体例を示す。 Hereinafter, a specific example in the case where a liquid discharge head is actually manufactured based on this embodiment will be described.
まず、図２（ａ）示すように、第１の基板２０１として、吐出エネルギ発生素子２０４となるヒータおよび後に液体供給路となる凹部２０７および不図示の電気配線などが形成された厚さ４００μｍの基板を２枚用意した。 First, as shown in FIG. 2A, a first substrate 201 having a thickness of 400 μm in which a heater to be a discharge energy generating element 204, a recess 207 to be a liquid supply path later, an electric wiring (not shown), and the like are formed. Two substrates were prepared.
次に、まず一方の第１の基板２０１の、吐出エネルギ発生素子２０４および凹部２０７が配備される側面に、接着剤として日化精工社製スペースリキッドＴＲ２ ６０４１２を塗布し、ホットプレートにて１４０℃で加熱乾燥した。その後、当該塗布面をもう一方の第１の基板２０１の吐出エネルギ発生素子２０４および凹部２０７が配備される側面に接触させ、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用いて、減圧状態において１３０℃で互いの面を接着した。減圧状態で加熱接合することにより、２つの第１の基板２０１に形成された凹部２０７にも接着剤が入り込み、図２（ｂ）に示すような充填された仮接着層２０２が得られた。 Next, space liquid TR2 60412 manufactured by Nikka Seiko Co., Ltd. is applied as an adhesive to the side surface of the first substrate 201 on which the ejection energy generating element 204 and the recess 207 are provided, and 140 ° C. using a hot plate. And dried with heat. Thereafter, the coated surface is brought into contact with the side surface on which the ejection energy generating element 204 and the concave portion 207 of the other first substrate 201 are disposed, and 130 ° C. in a reduced pressure state using a bonding apparatus (EVG520IS) manufactured by EVG. The surfaces of each other were bonded together. By heat-bonding in a reduced pressure state, the adhesive also entered the recesses 207 formed on the two first substrates 201, and a filled temporary adhesive layer 202 as shown in FIG. 2B was obtained.
次に、片側の第１の基板２０１の表面に、東京応化工業社製のフォトレジスト（ＴＨＭＲ−ｉＰ５７００ＨＲ）を塗布し、穴の空いたマスクを介して露光および現像することにより、レジストパターンを形成した。その後、ＳＰＰテクノロジーズ社製ドライエッチング装置（ＡＳＥ−ＰＥＧＡＳＵＳ）を用い、ボッシュプロセスによるドライエッチング加工を施すことにより、上記穴の位置に凹部２０７に接続する液体供給路２０８を形成した。さらに、もう片側の面にも上記と同様の処理を施し、同様に液体供給路２０８を形成した（図２（ｃ））。ドライエッチングを行う際、仮接着層２０２が配備されているので、吸着リークは確認されなかった。また、以上の工程は、厚さ４００μｍのシリコン基板を２枚重ねた状態、すなわち８００μｍ以上の厚みの基板に対して行ったので、その強度は１枚の場合よりも十分強く、取り扱いにも優れ、欠けや割れなども確認されなかった。 Next, a photoresist (THMR-iP5700HR) manufactured by Tokyo Ohka Kogyo Co., Ltd. is applied to the surface of the first substrate 201 on one side, and a resist pattern is formed by exposing and developing through a mask with a hole. did. Thereafter, using a dry etching apparatus (ASE-PEGASUS) manufactured by SPP Technologies, a liquid supply path 208 connected to the recess 207 was formed at the position of the hole by performing a dry etching process by a Bosch process. Further, the other surface was subjected to the same treatment as above, and the liquid supply path 208 was formed in the same manner (FIG. 2C). At the time of dry etching, since the temporary adhesive layer 202 is provided, no adsorption leak was confirmed. In addition, since the above steps were performed on a state in which two 400 μm thick silicon substrates were stacked, that is, on a substrate having a thickness of 800 μm or more, the strength was sufficiently stronger than that of a single substrate, and the handling was excellent. No chipping or cracking was found.
次いで、基板を貫通する液体供給ホール２０３が形成さている第２の基板２００を用意し、ＵＶ硬化型（遅延硬化型）の接着剤（アデカ製：ＫＲ−８２７）をスクリーン印刷により塗布した後、接着剤にＵＶ光を照射し重合反応を開始させた。本実施例において、ＵＶ光の照射は、ウシオ電機製プロキシミティ露光装置（ＵＸ−３０００）にｉ線（３６５ｎｍ）バンドパスフィルターを装着して行った。 Next, after preparing the second substrate 200 in which the liquid supply hole 203 penetrating the substrate is formed and applying a UV curable (delayed curable) adhesive (manufactured by ADEKA: KR-827) by screen printing, The adhesive was irradiated with UV light to initiate the polymerization reaction. In this example, irradiation with UV light was performed by attaching an i-line (365 nm) bandpass filter to a proximity exposure apparatus (UX-3000) manufactured by USHIO.
次に、図２（ｃ）の状態の第１の基板２０１の片面に接着剤を塗布した第２の基板２００を当接させ、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用いて、室温にて１０００Ｎの圧力をかけて接合した。接合は、先に照射したＵＶ光により接着剤の硬化が進まないうちに速やかに実施した。そして、もう片側の面にも同様の処理を行った。これにより、図２（ｅ）のような第１の基板２０１と第２の基板２００とを積層した積層構造体が得られた。この際、接合用の冶具を工夫すれば、第１の基板２０１の両方に対し、同時に第２の基板２００を積層することも可能である。 Next, the 2nd board | substrate 200 which apply | coated the adhesive agent is contact | abutted to the single side | surface of the 1st board | substrate 201 of the state of FIG.2 (c), and it is room temperature using the joining apparatus (EVG520IS) made from EVG. Joining was performed under a pressure of 1000 N. Bonding was performed promptly before the curing of the adhesive proceeded with the UV light previously irradiated. The same process was performed on the other side. As a result, a laminated structure in which the first substrate 201 and the second substrate 200 were laminated as shown in FIG. At this time, if the bonding jig is devised, the second substrate 200 can be simultaneously laminated on both the first substrates 201.
その後、上記積層構造体に対し、１００℃環境で１２０分の熱キュアを行うことにより、接着剤２１０（ＫＲ−８２７）を完全に硬化させた。接着剤２１０は完全に硬化するが仮接着層２０２には変化が現れないような、それぞれの接着剤の材料と熱キュア時の温度を予め定めておいた。よってこの際、仮接着層２０２に変化はなく、ずれや剥がれは確認されなかった。 Thereafter, the adhesive 210 (KR-827) was completely cured by performing heat curing for 120 minutes in a 100 ° C. environment on the laminated structure. The adhesive 210 is completely cured but the adhesive material and the temperature at the time of thermal curing are set in advance so that the temporary adhesive layer 202 does not change. Therefore, at this time, there was no change in the temporary adhesive layer 202, and displacement and peeling were not confirmed.
次に、図２（ｅ）の状態にある積層構造体を、図５に示すように剥離液５０１に浸漬した。ここでは剥離液５０１としてキシレンを用いた。これにより、仮接着層２０２の材料（スペースリキッド）が溶解されるので、これを剥離し、２つの積層基板２１１を分離した。分離後も、引き続きキシレンによって浸漬洗浄し、仮接着層２０２の面に残る接着剤を完全に除去した。 Next, the laminated structure in the state of FIG. 2E was immersed in a stripping solution 501 as shown in FIG. Here, xylene was used as the stripping solution 501. As a result, the material (space liquid) of the temporary adhesive layer 202 was dissolved, and was peeled off to separate the two laminated substrates 211. After the separation, it was subsequently immersed and washed with xylene to completely remove the adhesive remaining on the surface of the temporary adhesive layer 202.
その後、仮接着層２０２が剥離された面に対し、東京応化工業社製ドライフィルムフォトレジスト（ＴＭＭＦ）のラミネートおよびパターニングを繰り返すことにより、流路と吐出口２０６が形成された流路部材２０５を積層した。これにより、図２（ｈ）に示す２組の液体吐出ヘッド基板が得られた。 Thereafter, by laminating and patterning dry film photoresist (TMMF) manufactured by Tokyo Ohka Kogyo Co., Ltd. on the surface from which the temporary adhesive layer 202 has been peeled off, the flow path member 205 in which the flow path and the discharge port 206 are formed is obtained. Laminated. As a result, two sets of liquid discharge head substrates shown in FIG. 2H were obtained.
続いて、図６（ａ）〜（ｊ）を用い、第２の実施形態に基づく液体吐出ヘッドの別の製造形態について説明する。まず、図６（ａ）に示すように、第１の基板２枚を用意した。第１の基板６０１には、吐出エネルギ発生素子６０９、東京応化工業製ポジレジスト（ＯＤＵＲ１０１０）からなる液体流路型材６０２、吐出口６０３が形成されエポキシ樹脂からなる液体流路形成部材６０４、電気配線等が形成され、その厚みは７２５μｍである。吐出口６０３は液体流路型材６０２によって閉塞された閉塞穴になっている。なお、液体流路形成部材６０４が形成されている面には、後に仮接着剤の剥離や洗浄が容易なるように撥水処理を施している。 Subsequently, another manufacturing mode of the liquid ejection head based on the second embodiment will be described with reference to FIGS. First, as shown in FIG. 6A, two first substrates were prepared. The first substrate 601 includes a discharge energy generating element 609, a liquid flow path mold member 602 made of a positive resist (ODUR1010) manufactured by Tokyo Ohka Kogyo Co., Ltd., a liquid flow path forming member 604 made of an epoxy resin having a discharge port 603 formed thereon, and electrical wiring. Etc., and the thickness thereof is 725 μm. The discharge port 603 is a closed hole blocked by the liquid flow path mold 602. The surface on which the liquid flow path forming member 604 is formed is subjected to water repellent treatment so that the temporary adhesive can be easily peeled off and cleaned later.
次いで、図６（ｂ）に示すように、一方の第１の基板６０１にソマール社製の熱発泡型接着シート（ソマタックＴＥ）を加圧ラミネートした。その後、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用い、減圧状態において、もう一方の第１の基板６０１と室温で加圧接合した。これにより、２つの第２の基板６０１の間に仮接着層６０５を形成した。 Next, as shown in FIG. 6B, one first substrate 601 was pressure-laminated with a thermal foam adhesive sheet (Somatack TE) manufactured by Somar. Thereafter, using a bonding apparatus (EVG520IS) manufactured by EVG, pressure bonding was performed with the other first substrate 601 at room temperature in a reduced pressure state. Thus, a temporary adhesive layer 605 was formed between the two second substrates 601.
次に、ディスコ社製研削装置（ＤＦＧ８５４０）を用い、第１の基板６０１を図６（ｃ）に示すように、片側ずつ研削し厚みを調整した。具体的には、両側の厚みを７２５μｍから３００μｍまで薄加工した。 Next, using a disco grinding machine (DFG8540), the first substrate 601 was ground one by one as shown in FIG. 6C to adjust the thickness. Specifically, the thickness on both sides was thinned from 725 μm to 300 μm.
次に、第１の基板の薄加工した面に、東京応化工業製のフォトレジスト（ＴＨＭＲ−ｉＰ５７００ＨＲ）を塗布し、フォトマスクを介して露光および現像することにより、レジストパターンを形成した。その後、ＳＰＰテクノロジーズ社製ドライエッチング装置（ＡＳＥ−ＰＥＧＡＳＵＳ）を用い、ボッシュプロセスによるドライエッチング加工を施すことにより、上記穴の位置に貫通穴と成る供給口６０６を形成した。さらに、もう片側の面にも上記と同様の処理を施し、同様に供給口６０６を形成した（図６（ｄ））。ドライエッチングを行う際、仮接着層６０５が配備されているので、吸着リークは生じなかった。また、供給口６０６を形成する工程は、厚さ３００μｍの第１の基板を２枚重ねた状態、すなわち６００μｍ以上の厚みの基板に対して行うことになるので、その強度は１枚の場合よりも十分強く、欠けや割れなども生じなかった。 Next, a photoresist (THMR-iP5700HR) manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied to the thin processed surface of the first substrate, and exposed and developed through a photomask to form a resist pattern. Thereafter, a dry etching apparatus (ASE-PEGASUS) manufactured by SPP Technologies was used to perform a dry etching process by a Bosch process, thereby forming a supply port 606 serving as a through hole at the position of the hole. Further, the same processing as described above was performed on the other side surface, and a supply port 606 was formed similarly (FIG. 6D). At the time of dry etching, since the temporary adhesive layer 605 is provided, no adsorption leak occurred. Further, the process of forming the supply port 606 is performed on a state in which two first substrates having a thickness of 300 μm are stacked, that is, on a substrate having a thickness of 600 μm or more. It was strong enough and no chipping or cracking occurred.
次いで、図６（ｅ）に示すような２つの液体供給壁で構成される第２の基板６０７を２つ用意し、ウェハ接合用ポリマー接着剤（ダウ・ケミカル社製：ＣＹＣＬＯＴＥＮＥ）をスクリーン印刷により塗布した後、ホットプレートにて１００℃で加熱乾燥した。これにより、図６（ｆ）に示すように、第２の基板６０７の表面に接着層６０８が形成された。 Next, two second substrates 607 composed of two liquid supply walls as shown in FIG. 6E are prepared, and a wafer bonding polymer adhesive (manufactured by Dow Chemical Company: CYCLOTENE) is applied by screen printing. After coating, it was heated and dried at 100 ° C. on a hot plate. Thus, an adhesive layer 608 was formed on the surface of the second substrate 607 as shown in FIG.
次に、図６（ｄ）の状態にある第１の基板６０１の一方に、図６（ｆ）のように接着層６０８が形成された第２の基板６０７を当接させ、ＥＶＧ社製の接合装置（ＥＶＧ５２０ＩＳ）を用いて、１３０℃にて７０００Ｎの圧力をかけて接合した。そして、もう片側の面にも同様の処理を行った。これにより、図６（ｇ）のような積層構造体が得られた。この際、接合用の冶具を工夫すれば、第１の基板６０１の両方に対し、第２の基板６０７を同時に接合することも可能である。 Next, the second substrate 607 on which the adhesive layer 608 is formed as shown in FIG. 6F is brought into contact with one of the first substrates 601 in the state of FIG. Using a bonding apparatus (EVG520IS), bonding was performed by applying a pressure of 7000 N at 130 ° C. The same process was performed on the other side. Thereby, the laminated structure as shown in FIG. 6G was obtained. At this time, if the jig for bonding is devised, the second substrate 607 can be bonded to both the first substrate 601 at the same time.
その後、上記積層構造体に対し、ホットプレートにて１９０℃に加熱することにより、仮接着剤（ソマタック）を自己発泡させ、仮接着層６０５を剥離し、２つの積層基板６１０を分離した（図６（ｈ））。更に、それぞれの積層基板６１０を乳酸メチル溶液に浸漬することにより、第１の基板６０１に予め形成されていた液体流路型材６０２を除去した。これにより、図６（ｉ）に示すように、供給路６１１から供給口６０６を介して流入された液体を、吐出口６０３まで続くための流路６１２が形成された。その後、それぞれの積層基板６１０を、２００℃に加熱し接着層６０８を完全に硬化させることにより、図６（ｊ）に示すような液体吐出ヘッド基板が二組み得られた。 Thereafter, the laminated structure is heated to 190 ° C. with a hot plate to cause the temporary adhesive (Somatack) to self-foam, peel off the temporary adhesive layer 605, and separate the two laminated substrates 610 (FIG. 6 (h)). Further, the liquid flow path mold 602 previously formed on the first substrate 601 was removed by immersing each laminated substrate 610 in a methyl lactate solution. As a result, as shown in FIG. 6I, a flow path 612 for allowing the liquid that has flowed in from the supply path 611 through the supply port 606 to the discharge port 603 was formed. Thereafter, each laminated substrate 610 was heated to 200 ° C. to completely cure the adhesive layer 608, whereby two sets of liquid discharge head substrates as shown in FIG. 6J were obtained.
ところで、以上では、１対２個の液体吐出ヘッド用のマイクロデバイスに着目して説明してきたが、通常このような積層基板は、図３（ａ）および（ｂ）に示すような円形のウェハを用いて一括製造される。すなわち、図３（ａ）のように、第１の基板１０１の仮接着および第２の基板１００の接着を行い、層構成を完成させた後に、ダイシング処理を行って個々のチップに分離する。但し、図３（ｂ）のように、仮接着された第１の基板および２つの第２の基板のそれぞれをダイシング加工で分離した後、それぞれのチップで第１の基板に対する第２の基板の接着を行うことも可能である。 By the way, the above description has been made with a focus on microdevices for one to two liquid ejection heads. Usually, such a laminated substrate is a circular wafer as shown in FIGS. 3 (a) and 3 (b). It is manufactured in batch using. That is, as shown in FIG. 3A, after temporarily bonding the first substrate 101 and the second substrate 100 to complete the layer structure, dicing is performed to separate the chips. However, as shown in FIG. 3B, after the first substrate and the two second substrates temporarily bonded are separated by a dicing process, the second substrate with respect to the first substrate is separated by each chip. It is also possible to perform bonding.
また、以上では、同時に製造される２つの積層基板は等しい厚みおよび構造を有する形態で説明したが、本発明はこれに限定されるものではない。仮接着される２つの第１の基板も、それぞれの第１の基板に接着される２つの第２の基板も、互いに異なる厚みや構造を有するものであっても本発明の効果を得ることはできる。後に分離する２つの基板を、剥離可能な接着剤により仮接着することによって基板全体の厚みを増大させ、その後の取り扱いやすさを向上させることができればよい。 In the above description, the two laminated substrates manufactured at the same time have been described as having the same thickness and structure, but the present invention is not limited to this. Even if the two first substrates to be temporarily bonded and the two second substrates to be bonded to the respective first substrates have different thicknesses and structures, the effects of the present invention can be obtained. it can. It is only necessary that the two substrates to be separated later can be temporarily bonded with a peelable adhesive to increase the thickness of the entire substrate and improve the ease of handling thereafter.
１００ 第２の基板
１０１ 第１の基板
１０２ 仮接着層
100 second substrate
101 first substrate
102 Temporary adhesive layer
Claims (10)
２つの前記第１の基板を、仮接着層を介して、互いの面を接着する仮接着工程と、
前記第１の基板における前記面とは反対の面に、前記第２の基板を接合し、前記第１の基板と前記第２の基板とを積層する積層工程と、
前記仮接着層を剥離する剥離工程と
を有することを特徴とするマイクロデバイスの製造方法。 A method of manufacturing a microdevice configured by laminating a first substrate and a second substrate,
A temporary bonding step of bonding the two first substrates to each other through a temporary bonding layer;
A laminating step of bonding the second substrate to a surface opposite to the surface of the first substrate, and laminating the first substrate and the second substrate;
A microdevice manufacturing method comprising: a peeling step of peeling the temporary adhesive layer.
前記第１の基板には液体を供給するための供給口が形成され、
前記第２の基板には、液体を吐出する吐出口と、前記供給口から供給された液体を前記吐出口まで導く流路と、前記吐出口から液体を吐出させるエネルギを発生させるためのエネルギ発生素子とが備えられている請求項１ないし６のいずれか１項に記載のマイクロデバイスの製造方法。 The micro device is a laminated substrate for a liquid discharge head,
A supply port for supplying a liquid is formed in the first substrate,
The second substrate has a discharge port for discharging a liquid, a flow path for guiding the liquid supplied from the supply port to the discharge port, and energy generation for generating energy for discharging the liquid from the discharge port. The method for manufacturing a microdevice according to claim 1, further comprising an element.
前記第１の基板には、液体を吐出させるエネルギを発生させるためのエネルギ発生素子と、当該エネルギ発生素子まで液体を導く流路とが備えられ、
前記第２の基板には前記流路に液体を供給するための供給口が備えられている請求項１ないし６のいずれか１項に記載のマイクロデバイスの製造方法。 The micro device is a laminated substrate for a liquid discharge head,
The first substrate includes an energy generating element for generating energy for discharging the liquid, and a flow path for guiding the liquid to the energy generating element.
The method for manufacturing a microdevice according to claim 1, wherein the second substrate is provided with a supply port for supplying a liquid to the flow path.
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