JP2017028188A - Particle removing apparatus and semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a particle removing apparatus having an excellent space efficiency and a simple structure.SOLUTION: A particle removing apparatus 100 of the present invention comprises an outer cylinder 110, a rotary flow generating device 20 disposed inside one end side of the outer cylinder 110 and having a shaft portion 22 and guide vanes 23 fixed to the shaft portion 22, an inner cylinder 120 extending coaxially with the outer cylinder 110 through the other end side of the outer cylinder 110 to a position spaced a certain distance from the position where the rotary flow generating device 20 is disposed inside the outer cylinder 110, and a sealing member 114 for sealing the space between the other end of the outer tube 110 and the outer surface of the inner tube 120. The fluid flowing into the outer cylinder 110 through the rotary flow generating device 20 flows out to the outside from the inner cylinder 120.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a particle removing apparatus and a semiconductor manufacturing apparatus.

  As an apparatus for removing particles contained in a fluid, a fluid is introduced from a lateral direction into a cylindrical member extending in a vertical direction, particles having a high specific gravity are precipitated vertically below the cylindrical member, and the fluid from which the particles have been removed is the cylindrical member. There is a device for taking out from above (see Non-Patent Document 1).

Further, a trap apparatus body attached to the exhaust system of the film forming apparatus and configured to solidify and collect the products and / or by-products contained in the exhaust gas of the film forming apparatus in the trap section, and the trap apparatus body A heater provided for heating the solidified product and / or by-product, and a cleaning exhaust system connected to the trap device via a valve for exhausting the heated and vaporized product and / or by-product; There is a reaction product collecting device having cooling means for forcibly cooling the trap portion.
This reaction product collector cools the trap part at the time of film formation, adheres the product and / or by-product thereto, heats the trap part at the time of cleaning, and discharges the product and / or by-product. (See Patent Document 1).

In addition, the intermediate processing chamber and the gas introduction inner pipe and the discharge inner pipe are coaxially arranged inside the outer pipe, and the gas trap effect is obtained by suddenly changing the flow passage cross section and flow direction of the exhaust gas several times in the axial direction. An exhaust trap apparatus for improving the efficiency is disclosed.
This exhaust trap device employs a structure in which the flow passage cross-sectional area and flow passage direction of the exhaust gas are suddenly changed a plurality of times in the axial direction, thereby forming a plurality of collisions and turbulent flows with respect to the gas flow. A surface condensing and adhering method that can suitably consume the energy of the gas flow is used (see Patent Document 2).

Tetsuo Kurosaki, “Filstar”, [online], industria homepage, [Search July 9, 2015], Internet <URL http://www.industria.bz/>

JP 2007-250696 A Japanese Patent Laid-Open No. 06-142402

According to the technique described in Non-Patent Document 1, it is necessary to arrange a cylindrical member that extends downward from the fluid inlet in the vertical direction.
According to the techniques described in Patent Document 1 and Patent Document 2, the structure is complicated, and thus manufacturing costs are increased.

  An object of the present invention is to provide a particle removing device having a simple structure and space efficiency.

In order to solve the above-mentioned problem, an embodiment of a particle removing device of the present invention is a rotation having an outer cylinder, a shaft portion, and a guide blade fixed to the shaft portion, arranged inside one end side of the outer tube. An inner cylinder that extends from the position where the rotary flow generator is disposed within the outer cylinder to a position that is spaced apart by a certain distance, through the other end side of the outer cylinder in a state of being coaxial with the outer cylinder, A sealing member that seals between the other end of the outer cylinder and the outer surface of the inner cylinder, and the fluid that has flowed into the outer cylinder through the rotary flow generating device flows out of the inner cylinder, It is characterized by.
The outer cylinder is provided on one end side, a small diameter portion where the rotary flow generator is disposed, and a large diameter portion disposed on the other end side, which is larger in diameter than the small diameter portion and in which the inner cylinder is disposed, A transition portion between the small diameter portion and the large diameter portion, and the inner diameter of the small diameter portion and the inner diameter of the inner cylinder may be the same.
Moreover, the slit which penetrates the side wall of an inner cylinder may be provided in the other end side of the outer cylinder in the part arrange | positioned inside the outer cylinder in an inner cylinder.
A net member may be attached to the slit.
A net member may be disposed between the outer cylinder and the inner cylinder.
Other embodiment of this invention is a semiconductor manufacturing apparatus provided with the said particle | grain removal apparatus.
In addition, the said structure may be improved suitably, and at least one part may substitute for another structure.

  According to the present invention, it is possible to provide a particle removal device having a simple structure and high space efficiency.

It is a schematic sectional drawing of the particle removal apparatus of 1st Embodiment. It is an external appearance perspective view of a rotary flow generator. (A) is the front view which looked at the rotational flow generator from the upstream, (b) is BB sectional drawing of (a). It is the figure which showed an example of the semiconductor manufacturing apparatus to which the particle removal apparatus of 1st Embodiment was applied. It is a figure which shows the attachment structure to the outer cylinder of a rotational flow generator, and the connection structure of a particle removal apparatus and a gas exhaust pipe. It is a schematic sectional drawing of the particle removal apparatus of 2nd Embodiment.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings and the like.
FIG. 1 is a schematic cross-sectional view of a particle removing apparatus 100 according to the first embodiment.
The particle removing apparatus 100 includes an outer cylinder 110, an inner cylinder 120, and a rotary flow generator 20 arranged inside the upstream side (right side in the drawing) of the outer cylinder 110. The particle removing device 100 is disposed between the first gas exhaust pipe 10A and the second gas exhaust pipe 10B.

  The outer cylinder 110 includes a small diameter portion 111, a large diameter portion 113, and a transition portion 112 positioned between the small diameter portion 111 and the large diameter portion 113.

The small-diameter portion 111 is a portion on the upstream side (right side in the drawing) of the outer cylinder 110, and the rotary flow generator 20 is disposed inside. The inner diameter of the small diameter portion 111 is substantially the same as the inner diameter of the first gas discharge pipe 10A to which the small diameter portion 111 (outer cylinder 110) is connected.
A connecting flange 111 </ b> A is provided on the outer periphery of the upstream end portion of the small diameter portion 111.

  The large diameter portion 113 is a portion on the downstream side (left side in the drawing) of the outer cylinder 110 and has a larger diameter than the small diameter portion 111. The large diameter portion 113 occupies half or more of the entire length of the outer cylinder 110. A connecting flange 113 </ b> A is provided at the downstream end of the large diameter portion 113.

  The inner cylinder 120 is smaller in diameter than the large diameter portion 113 of the outer cylinder 110, has an inner diameter that is substantially the same as the inner diameter of the small diameter portion 111, and is disposed inside the large diameter portion 113. The axis of the large diameter portion 113 (outer cylinder 110) and the axis of the inner cylinder 120 are coaxial, and a gap 130 is formed between the large diameter portion 113 and the inner cylinder 120 at a constant interval.

The downstream end of the inner cylinder 120 protrudes downstream from the downstream end of the large diameter portion 113.
The upstream end portion of the inner cylinder 120 is positioned in front (downstream side) of the upstream end portion (boundary between the large diameter portion 113 and the transition portion 112) of the large diameter portion 113. That is, the inner cylinder 120 does not extend to the inside of the transition part 112.

Four slits 121 arranged at equal intervals in the circumferential direction are provided on the side surface of the inner cylinder 120 that overlaps the outer cylinder 110 and in the vicinity of the downstream end. However, the number of slits 121 is not limited to four, and may be more or less.
A connecting flange 122 is provided at the end of the inner cylinder 120.

  An annular sealing member 114 adjacent to the downstream end of the large diameter portion 113 of the outer cylinder 110 and having an outer diameter substantially the same as the outer diameter of the flange 113A of the large diameter portion 113 is attached to the outer periphery of the inner cylinder 120. Has been. The inner diameter of the sealing member 114 is a size that can be fitted to the outer diameter of the inner cylinder 120 without a gap.

The sealing member 114 is disposed to face the coupling flange 113A, and is tightened by a clamp 115 from the outer peripheral side with an O-ring interposed therebetween.
As a result, the downstream end of the outer cylinder 110 is closed, and the inner cylinder 120 is held in the outer cylinder 110.

  FIG. 2 is an external perspective view of the rotary flow generator 20. 3A is a front view of the rotary flow generator 20 as viewed from the upstream side, and FIG. 3B is a cross-sectional view taken along line BB in FIG.

  As shown in FIGS. 2 and 3, the rotary flow generator 20 includes a cylindrical portion 21, a flange portion 24 formed at one end thereof, a shaft portion 22 located at the center of the cylindrical portion 21, and the cylindrical portion 21. And four guide vanes 23 provided between the shaft portion 22 and the shaft portion 22. In addition, the rotational flow generator 20 is arrange | positioned by making the right side into the upstream (substrate processing chamber 2 side) in FIG.2 and FIG.3 (b).

The cylindrical portion 21 is a thin short cylinder, and the outer diameter thereof is formed such that it can be inserted into the outer cylinder 110 without a gap.
The shaft portion 22 has a cylindrical shape with a predetermined diameter, and is provided with conical portions (front end conical portion 22F and rear end conical portion 22R) at both front and rear ends of a cylindrical portion 22a to which guide vanes 23 described later are integrally joined. Yes.
In addition, although the rotational flow generator 20 of this embodiment has the cylindrical part 21 in this way, it is not limited to this, Even if it does not have the cylindrical part 21 in the outer peripheral part of the blade | wing 23 Good.

The apex angle of the front end conical portion 22F toward the upstream side is set to 120 °, and the apex angle of the rear end conical portion 22R toward the downstream side is set to 90 °.
By setting the apex angle of the front end conical portion 22F toward the upstream side to 120 °, the fluid flow can be smoothly introduced into the guide vane 23 without forming turbulent flow or the like.
Further, by setting the apex angle of the rear end conical portion 22R toward the downstream side to 90 °, the rotational flow formed by the guide vanes 23 can be smoothly guided to the inner wall of the pipe without forming turbulence or the like. Can do.

  The guide vanes 23 are thin plate-like, and are provided at four equal intervals in the circumferential direction (that is, at 90 ° intervals) between the inner wall of the cylindrical portion 21 and the outer peripheral surface of the shaft portion 22. The guide blade 23 is provided so as to connect the outer peripheral surface of the shaft portion 22 and the inner peripheral surface of the cylindrical portion 21, in other words, the shaft portion 22 is provided at the center of the cylindrical portion 21 with four guide blades 23. Support.

  As shown in FIG. 2, the angle of the connecting portion L2 between the guide blade 23 and the cylindrical portion 21 with respect to the intersection line L1 between the surface perpendicular to the axis CL of the cylindrical portion 21 and the cylindrical portion 21 is an angle θ (for example, θ = 20 °). In the present embodiment, the angle θ is set to be the same for all four guide blades 23.

As for the flange part 24 extended toward the outer diameter side from the one end side of the cylindrical part 21, the outer peripheral surface 24a (surface which faces outward) of this flange part 24 is curving as shown in FIG.
The O-ring 14 is disposed and held on the outer peripheral surface 24a. That is, the flange portion 24 has a function of an inner ring that positions the O-ring 14.
The thickness t of the flange portion 24 is smaller than the thickness R of the O-ring 14 as shown in FIG. Note that the thickness of the O-ring 14 is a diameter of a cross section of a member constituting the O-ring 14 as shown in FIG.

The particle removal apparatus 100 is disposed in the semiconductor manufacturing apparatus 1, for example.
FIG. 4 is a diagram illustrating an example of the semiconductor manufacturing apparatus 1 to which the particle removing apparatus 100 of the present embodiment is applied. FIG. 5 is a view showing a structure for mounting the rotary flow generator 20 to the outer cylinder 110 and a structure for connecting the particle removing device 100 and the first gas discharge pipe 10A.

  As shown in FIG. The semiconductor manufacturing apparatus 1 includes a gas supply pipe 3, a substrate processing chamber 2, a particle removal apparatus 100 according to this embodiment, and a vacuum pump 5. The substrate processing chamber 2 and the particle removal apparatus 100 are connected by a first gas discharge pipe 10A, and the particle removal apparatus 100 and the vacuum pump 5 are connected by a second gas discharge pipe 10B.

The gas supply pipe 3 is connected to the gas inflow side of the substrate processing chamber 2 and supplies the substrate processing gas to the substrate processing chamber 2.
Although detailed description is omitted, the substrate processing chamber 2 is formed of quartz or the like, and has an opening that can be opened and closed by a flange at the bottom. A substrate 4 to be processed is taken into and out of the substrate processing chamber 2 through the opening.
The first gas discharge pipe 10 </ b> A is connected to the gas discharge side of the substrate processing chamber 2.

The small diameter portion 111 of the outer cylinder 110 of the particle removing apparatus 100 is connected to the downstream side of the first gas exhaust pipe 10A. The first gas exhaust pipe 10A, the outer cylinder 110, the inner cylinder 120, and the second gas exhaust pipe 10B are axes.
The small diameter portion 111 of the outer cylinder 110 and the first gas discharge pipe 10A are connected as follows.
An outer ring 25 is disposed on the outer peripheral side of the O-ring 14 as shown in FIG. The outer ring 25 is a sealing member having a T-shaped cross section, and includes an outer ring portion 25a and an inner ring portion 25b extending from the inner central portion of the outer ring portion 25a toward the inner diameter side. The thickness of the inner ring portion 25 b is the same as the thickness of the flange portion 24 and is smaller than the thickness R of the O-ring 14.
Further, the end surface 25c of the inner ring portion 25b is curved in the same manner as the outer peripheral surface 24a of the flange portion 24, and the O-ring 14 is sandwiched between the outer peripheral surface 24a of the flange portion 24 and the end surface 25c of the outer ring 25.

  Here, the cylindrical portion 21 of the rotary flow generator 20 is inserted inside the small diameter portion 111, but the upstream flange portion 24 of the rotary flow generator 20 is larger than the inner diameter of the small diameter portion 111. Not inserted. Further, the flange portion 24 on the upstream side of the rotary flow generator 20 is larger than the inner diameter of the first gas discharge pipe 10A, and thus is not inserted inside. Therefore, it is possible to prevent the entire rotary flow generator 20 from entering the gas exhaust pipe 10 and becoming difficult to remove.

Furthermore, since the rotary flow generator 20 includes a flange portion 24 and the flange portion 24 has a function of an inner ring, the O-ring 14 can be held without using an inner ring as a separate member.
Since the thickness t of the flange portion 24 is smaller than the thickness R of the O-ring 14, the O-ring 14 can be compressed and deformed when tightened with a clamp, and the gas exhaust pipe 10 and the substrate processing chamber 2 are hermetically connected. can do.

  Then, as shown in FIG. 5, the connecting flange 111 </ b> A provided on the outer periphery of the distal end portion of the outer cylinder 110 and the fixing flange 2 </ b> F provided at the discharge port of the substrate processing chamber 2 include a flange portion 24, The O-ring 14 and the inner ring portion 25b of the outer ring 25 are disposed so as to face each other and are clamped by the clamp 15 from the outer peripheral side.

The connecting flange 111 </ b> A and the fixed flange 2 </ b> F are provided with a taper on the slope opposite to the side facing each other so that the thickness decreases toward the outer peripheral side.
On the other hand, the clamp 15 is provided with a taper on the inner surface side so that the thickness decreases from the outer peripheral side toward the inner peripheral side.
Therefore, when the clamp 15 is tightened toward the inner diameter side, the connecting flange 111A and the fixed flange 2F are pressed so as to approach each other.

At this time, the thickness R of the O-ring 14 is larger than the thickness t of the inner ring portion 25 b of the outer ring 25 and the thickness t of the flange portion 24. For this reason, the O-ring 14 is deformed by tightening the clamp 15 toward the inner diameter side and pressing the connecting flange 111A and the fixed flange 2F closer to each other.
At this time, since the position of the O-ring 14 is fixed by the flange portion 24, the side surface of the O-ring 14 is pressed against the connecting flange 111A and the fixing flange 2F without shifting when tightening, and the gas exhaust pipe 10 and The substrate processing chamber 2 is hermetically connected.

The second gas discharge pipe 10 </ b> B is connected to the downstream side of the inner cylinder 120 of the particle removing device 100.
Although the detailed description of the connection between the inner cylinder 120 and the second gas discharge pipe 10B is omitted, the connection between the connection flange 122 of the inner cylinder 120 and the flange portion 10C provided in the second gas discharge pipe 10B. Are connected by a clamp (not shown) with an O-ring (not shown) sandwiched therebetween.

The vacuum pump 5 is connected to the downstream side of the second gas discharge pipe 10B.
The vacuum pump 5 exhausts the substrate-treated gas and the like generated by the reaction in the substrate processing chamber 2 through the gas exhaust pipe 10 by driving.

The semiconductor manufacturing apparatus 1 having the above configuration performs a film forming process on the substrate by the following operation.
That is, the substrate 4 is placed in the substrate processing chamber 2, the temperature and pressure in the substrate processing chamber 2 are adjusted, and the substrate processing gas is supplied to the substrate processing chamber 2 through the gas supply pipe 3.
Thereby, the substrate processing gas supplied to the substrate processing chamber 2 reacts by heating to generate a film-forming component and deposit it on the surface of the substrate 4. For example, a mixed gas of SiH ₂ CL ₂ and NH ₃ is used as a substrate processing gas, and Si ₃ N ₄ (silicon nitride) that is a reaction-generated film forming component is deposited on the surface of the substrate 4.

In the above reaction, HCL is generated, and the generated HCL is combined with NH ₃ (ammonium) by the secondary reaction to become NH ₄ CL (ammonium chloride), which is a particle such as a reaction by-product together with other reaction components. It becomes.
Then, the substrate processed gas after reacting in the substrate processing chamber 2 is sucked and discharged through the first gas discharge pipe 10A, the particle removing device 100, and the second gas discharge pipe 10B by driving the vacuum pump 5. .

At this time, the particle removing apparatus 100 operates as follows.
As shown in FIG. 1, due to suction of the vacuum pump 5, a gas containing reaction product particles M is generated from the upstream substrate processing chamber 2 and the first gas discharge pipe 10 </ b> A side by the rotational flow of the particle removal apparatus 100. Flows into the device 20.

  The tip conical portion 22F of the shaft portion 22 of the rotary flow generator 20 deflects the gas flow radially (in the direction of colliding with the inner wall surface of the outer cylinder 110), and the guide vane 23 It is deflected obliquely in the circumferential direction along the formed shape.

That is, the guide vane 23 causes the flow of the substrate-treated gas to flow in a direction tangential to a circle centered on the axis CL in a plane perpendicular to the axis CL, and in a direction parallel to the axis CL. Deflection to angle.
The rear end conical portion 22 </ b> R of the shaft portion 22 smoothly joins the deflected flow on the downstream side of the shaft portion 22.

As a result, the substrate-treated gas collides with the inner wall surface of the small-diameter portion 111 of the outer cylinder 110 on the downstream side of the rotary flow generator 20, and the direction is regulated to form a rotary flow.
Since four guide vanes 23 are provided at intervals of 90 ° in the circumferential direction, four rotating flows are formed like four-threaded screws having the same pitch and different 90 ° phases, and these are joined to form a rotating flow. And the particles M also flow along this rotating flow.

The rotational flow gradually increases in outer diameter along the outer diameter of the transition section 112 at the transition section 112 of the outer cylinder 110, and the diameter of the rotational trajectory of the particles M increases accordingly.
When the transition portion 112 becomes the large diameter portion 113, the gas flows along the side surface of the large diameter portion 113, and the particles also flow along the side surface of the large diameter portion 113.

Here, since the inner cylinder 120 is connected to the second gas discharge pipe 10B, and the second gas discharge pipe 10B is sucked by the vacuum pump 5, the gas flowing through the particle removing device 100 is upstream of the inner diameter part 120. It is sucked into the inner cylinder 120 in the vicinity of the end.
However, in the case of particles M (particle size is about 0.1 μm or more) that are affected by inertia, an inertial force acts. Due to this inertial force, the particles M do not get on the orbital gas flow entering the inner cylinder 120 and enter the gap 130 between the inner cylinder 120 and the outer cylinder 110.

The inner cylinder 120 is provided with a slit 121, and gas flows into the inner cylinder 120 from the gap 130 through the slit 121.
The suction from the vacuum pump 5 causes a slight flow from upstream to downstream in the gap 130, so that the particles M flowing into the gap 130 go downstream of the gap 130. Then, the particles M are captured in the gap 130 from the downstream side.
On the other hand, since the particles M are captured in the gaps 130, the gas not containing the particles M flows through the inner cylinder 120, and only clean gas in which the particles M affected by inertia are reduced flows downstream.

  The particles M are thus collected in the gap 130 between the large-diameter portion 113 of the outer cylinder 110 and the inner cylinder 120 in the particle removing apparatus 100, and clean gas that does not contain the particles M flows downstream. The frequency of maintenance and the downtime for the maintenance can be reduced, and the operating efficiency of the semiconductor manufacturing apparatus 1 can be improved.

  It should be noted that even under a reduced pressure at which almost no gas swirl is generated, the swirl flow can be generated and collected by the rotating flow generator 20 on the particles M affected by inertia.

  Further, the inner cylinder 120 of the particle removing device 100, the small diameter portion 111 of the outer cylinder 110, the first gas exhaust pipe 10A, and the second gas exhaust pipe 10B have substantially the same inner diameter. Therefore, there is little pressure loss when the gas flows.

The upstream end portion of the inner cylinder 120 is positioned on the near side (downstream side) of the end portion of the large diameter portion 113 (the boundary between the large diameter portion 113 and the transition portion 112). That is, the inner cylinder 120 does not extend to the inside of the transition part 112.
Thereby, sufficient inertial force is given to the particles M in the transition portion 112 by the rotating flow generated by the rotating flow generator 20, and the particles M do not enter the inner cylinder 120, and enter the inner wall of the large-diameter portion 113. Since it advances while being pressed, it is separated from the air current.

(Second Embodiment)
Next, a second embodiment of the particle removing apparatus 100 according to the present invention will be described. FIG. 6 is a schematic cross-sectional view of the particle removing apparatus 100 of the second embodiment.
The second embodiment is different from the first embodiment in that a cylindrical mesh member 140 is disposed as a mesh member in the gap 130 between the outer cylinder 110 and the inner cylinder 120.
The downstream end of the cylindrical mesh member 140 is in contact with the sealing member 114.
Further, a slit covering net member 141 is disposed on the outer peripheral side of the slit 121.

  According to the present embodiment, since the cylindrical mesh member 140 is provided in the gap 130, the particles are captured by the cylindrical mesh member 140 when the particles flow in. Therefore, the trapping effect of the particles becomes higher, and the trapped matter can be easily taken out during maintenance. Further, since the mesh member 141 is also attached to the slit 121, the particles do not flow into the inner cylinder 120 through the slit 121.

(Deformation)
The present invention is not limited to the above-described embodiment, and various modifications and changes as described below are possible, and these are also within the scope of the present invention.
In the embodiment, the form in which the particle removing apparatus 100 is used in the semiconductor manufacturing apparatus 1 has been described. However, the present invention is not limited to this, and can be used in other pipes as long as it is in a pipe through which a fluid flows. It is. For example, when the fluid is a gas, it can be used as a vacuum cleaner, an air cleaner, or the like. The fluid is not limited to gas but may be liquid.

  In the present embodiment, the rotary flow generator 20 includes four guide vanes. However, the number of guide blades is not limited to this, and may be less or more. For example, 1-16 (preferably 2-8) guide vanes may be provided.

  Although the rotational flow generator 20 of this embodiment was arrange | positioned in the gas exhaust pipe provided immediately after the substrate processing chamber 2, it is not limited to this, It arrange | positions in the other location which is easy to take out and to collect collection particles. be able to.

In the above-described embodiment, the outer cylinder 110 has been described as having the large-diameter portion 113, the small-diameter portion 111, and the transition portion 112, but the present invention is not limited to this.
For example, the upstream side where the rotary flow generator 20 is disposed and the downstream side where the sealing member 114 is attached have the same diameter and do not have the transition portion 112, that is, the diameter of the outer cylinder 110. May be constant.

  In addition, although embodiment and a deformation | transformation form can also be used in combination as appropriate, detailed description is abbreviate | omitted. Further, the present invention is not limited to the embodiment described above.

  DESCRIPTION OF SYMBOLS 1: Semiconductor manufacturing apparatus, 2: Substrate processing chamber, 5: Vacuum pump, 10A: 1st gas exhaust pipe, 10B: 2nd gas exhaust pipe, 20: Rotary flow generator, 21: Cylindrical part, 100: Particle removal apparatus 110: outer cylinder, 111: small diameter part, 111A: flange, 112: transition part, 113: large diameter part, 113A: flange, 114: sealing member, 120: inner cylinder, 121: slit, 130: gap, 140 : Cylindrical mesh member, 141: Mesh member

Claims (6)

An outer cylinder,
A rotary flow generator that is disposed inside one end of the outer cylinder and has a shaft portion and guide vanes fixed to the shaft portion;
An inner cylinder that extends coaxially with the outer cylinder, passes through the other end of the outer cylinder, and extends from the position where the rotary flow generating device is disposed inside the outer cylinder to a position that is spaced apart by a certain distance;
A sealing member that seals between the other end of the outer cylinder and the outer surface of the inner cylinder,
The fluid that has flowed into the outer cylinder through the rotary flow generating device flows out of the inner cylinder;
A device for removing particles in a fluid. The particle removal apparatus according to claim 1,
The outer cylinder is
A small-diameter portion that is provided on the one end side and in which the rotating flow generator is disposed;
A large-diameter portion that is disposed on the other end side, has a larger diameter than the small-diameter portion, and in which the inner cylinder is disposed;
A transition portion between the small diameter portion and the large diameter portion,
The inner diameter of the small diameter portion and the inner diameter of the inner cylinder are the same diameter,
A particle removal apparatus characterized by the above. The particle removal apparatus according to claim 1 or 2,
A slit penetrating a side wall of the inner cylinder is provided on the other end side of the outer cylinder in a portion of the inner cylinder disposed inside the outer cylinder;
A particle removal apparatus characterized by the above. The particle removal apparatus according to claim 3, wherein
A mesh member is attached to the slit,
A device for removing particles in a fluid. The particle removal apparatus according to any one of claims 1 to 4,
A net member is disposed between the outer cylinder and the inner cylinder;
A particle removal apparatus characterized by the above.   A semiconductor manufacturing apparatus provided with the particle removal apparatus of any one of Claim 1 to 5.

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