JP2017028162A5 - Method for producing single crystal SiC substrate - Google Patents

Claims (6)

A method for controlling the shape of a conductive single crystal SiC substrate, wherein at least one side of the single crystal SiC substrate is processed by mechanical processing, and only one side of the machined solution is brought into contact with an electrolyte aqueous solution in a container. The single crystal SiC substrate serves as an anode, a cathode is disposed so that the distance from the liquid contact surface of the single crystal SiC substrate is constant, and then a DC voltage is applied between the anode and the cathode. A method for controlling the shape of a single-crystal SiC substrate, characterized by anodizing the wetted surface of the crystalline SiC substrate and removing a work-affected layer by mechanical processing. The method for controlling the shape of a single crystal SiC substrate according to claim 1, wherein the mechanical processing includes processing using diamond abrasive grains. The method for controlling the shape of a single crystal SiC substrate according to any one of claims 1 to 2, wherein the mechanical processing includes at least one of lapping, polishing, and grinding. The electrical conductivity of the aqueous electrolyte solution is 1 millisiemens / meter (10 microsiemens / centimeter) or more and 10 siemens / meter (100 millisiemens / centimeter) or less. A method for controlling a shape of a single crystal SiC substrate according to one item. The single crystal SiC substrate having at least one surface processed by mechanical processing is a single crystal SiC substrate in which both the first surface and the second surface are processed by mechanical processing, the first surface 2. The mechanical processing is performed until the surface roughness Ra of both the first surface and the second surface is 10 nm or less, and both surfaces are anodized one by one to remove the work-affected layer on both surfaces. The method of controlling the shape of the single crystal SiC substrate as described in any one of -4. A method for producing a single crystal SiC substrate, comprising producing the single crystal SiC substrate according to claim 1 by controlling the shape thereof.