JP2017022314A - Process liquid of semiconductor wafer, processed semiconductor wafer, and processing method of semiconductor wafer - Google Patents
Process liquid of semiconductor wafer, processed semiconductor wafer, and processing method of semiconductor wafer Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000003672 processing method Methods 0.000 title description 2
- 229910000679 solder Inorganic materials 0.000 claims abstract description 37
- 238000007772 electroless plating Methods 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 239000012433 hydrogen halide Substances 0.000 claims description 3
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 29
- 239000002253 acid Substances 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 238000007747 plating Methods 0.000 description 19
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Wire Bonding (AREA)
Abstract
Description
本発明は、半導体用ＵＢＭ形成とはんだ接合またはワイヤボンディングされる半導体用ウェハの処理液、及び処理された半導体用ウェハ並びに半導体用ウェハの処理方法に関する。 The present invention relates to a processing solution for a semiconductor wafer to be subjected to solder bonding or wire bonding with UBM formation for a semiconductor, a processed semiconductor wafer, and a processing method for the semiconductor wafer.
ＬＳＩやＩＣなどのチップの接合方法としてワイヤボンディング法やフリップチップ法が広がっており、フリップチップ法においては金属パッドとはんだの接合を目的としたＵＢＭ（アンダーバンプメタル）の形成が必須とされている。 Wire bonding methods and flip chip methods are widely used as bonding methods for chips such as LSI and IC. In flip chip methods, it is essential to form UBM (under bump metal) for the purpose of bonding metal pads and solder. Yes.
ＵＢＭの形成方法としては、低コストが期待される無電解めっき法により形成することが増えてきている。無電解めっきによりＵＢＭを形成する仕様としては、Ｎｉめっきを行った後にＡｕめっきを行うＮｉ／Ａｕ皮膜が一般的である。しかしながら、めっきしたウェハが高温に晒される場合には、ＮｉがＡｕ皮膜中に拡散し、表面にＮｉ酸化物等のＮｉ化合物が形成され、はんだ濡れ性やワイヤボンディング性が悪くなるという問題がある。このような高温下におけるＮｉの拡散を防止するために、Ｐｄ皮膜をＮｉ皮膜とＡｕ皮膜の間に入れる。すなわち、無電解でＮｉめっき、Ｐｄめっき、Ａｕめっきを順次行い、Ｎｉ／Ｐｄ／Ａｕ皮膜とする。 As a method for forming UBM, formation by an electroless plating method which is expected to be low in cost is increasing. As a specification for forming UBM by electroless plating, a Ni / Au coating in which Au plating is performed after Ni plating is common. However, when the plated wafer is exposed to a high temperature, Ni diffuses into the Au film, and a Ni compound such as Ni oxide is formed on the surface, resulting in poor solder wettability and wire bondability. . In order to prevent the diffusion of Ni at such a high temperature, a Pd film is inserted between the Ni film and the Au film. That is, Ni plating, Pd plating, and Au plating are sequentially performed electrolessly to form a Ni / Pd / Au coating.
Ｎｉ拡散に対するＰｄ皮膜のバリア性については、時間にもよるが３００℃未満である。したがって、通常の鉛フリーはんだのリフロー条件（Ｍａｘ２６０℃）ではＮｉは拡散せず良好な結果が得られるが、高温はんだの接合において３００℃以上の温度でリフローするとＮｉがＰｄ皮膜やＡｕ皮膜中を拡散し、表面にＮｉ化合物が形成され、その後のはんだ接合やワイヤボンディングに際して、はんだ濡れ性やワイヤボンディング性が悪くなる場合がある。また、無電解めっきを行った後、ポリイミドなどを塗布・硬化する際にも３００℃以上の熱がかかる場合があり、上記と同様に表面にＮｉ化合物が形成され、はんだ濡れ性やワイヤボンディング性が悪くなる場合がある。
一方、高湿に晒される場合には、Ｎｉ／Ａｕ皮膜仕様でもＮｉ／Ｐｄ／Ａｕ皮膜仕様でもパッドの外周部のめっき／パシベーションの隙間から水分が浸み込み、Ｎｉ皮膜が腐食し、表面にＮｉ化合物が析出することがあり、はんだ濡れ性やワイヤボンディング性が悪くなる場合がある。
The barrier property of the Pd film against Ni diffusion is less than 300 ° C., depending on the time. Therefore, under normal reflow conditions for lead-free solder (Max 260 ° C), Ni does not diffuse and good results are obtained. However, when reflowing at a temperature of 300 ° C or higher in high-temperature solder bonding, Ni passes through the Pd film or Au film. It diffuses and a Ni compound is formed on the surface, and solder wettability and wire bondability may deteriorate during subsequent solder bonding or wire bonding. In addition, after applying electroless plating, heat of 300 ° C or higher may be applied when applying and curing polyimide, etc., and Ni compounds are formed on the surface in the same manner as described above, and solder wettability and wire bonding properties. May get worse.
On the other hand, when exposed to high humidity, both Ni / Au coating specifications and Ni / Pd / Au coating specifications allow moisture to permeate through the plating / passivation gap on the outer periphery of the pad, causing the Ni coating to corrode and Ni compound may precipitate, and solder wettability and wire bonding property may deteriorate.
このようなＡｕ皮膜上に析出したＮｉ化合物によるはんだ濡れ性やワイヤボンディング性が悪くなることを改善する方法としては、特許文献１に、Ｎｉ化合物をエッチングにより除去することが記載されている。エッチングはドライエッチングが好ましいが、ウェットエッチングでも可能であることが記載されている。しかし、ウェットエッチングの具体的な方法についての記載はない。
また、Ａｕ皮膜上に析出したＮｉ化合物の除去は、リフロー前やワイヤボンディング前にプラズマ処理（ドライエッチング）による除去が一般的である（特許文献２参照）。しかしながら、Ｎｉ化合物は電位差の影響で特定のパッドにしか発生していない場合があり、プラズマ処理のようなドライエッチングを行うと正常部の表面のＡｕ皮膜も除去される恐れがあり、Ａｕ皮膜が除去された箇所は特性が悪くなる場合がある。
また、Ａｕ皮膜上のめっき液残留物を除去するために過酸化水素水を含む洗浄液で処理する方法が提案されているが（特許文献４、特許文献５参照）、これらの文献にはＮｉ化合物の記載がなく、またＮｉ化合物を除去するのは適さない。
As a method for improving the deterioration of solder wettability and wire bonding property due to the Ni compound deposited on the Au film, Patent Document 1 describes that the Ni compound is removed by etching. It is described that dry etching is preferable, but wet etching is also possible. However, there is no description about a specific method of wet etching.
Further, the Ni compound deposited on the Au film is generally removed by plasma treatment (dry etching) before reflow or wire bonding (see Patent Document 2). However, Ni compounds may be generated only on specific pads due to the potential difference. When dry etching such as plasma treatment is performed, the Au film on the surface of the normal part may be removed. The removed portion may have poor characteristics.
Moreover, in order to remove the plating solution residue on the Au film, a method of treating with a cleaning solution containing a hydrogen peroxide solution has been proposed (see Patent Document 4 and Patent Document 5). Is not described, and it is not suitable to remove the Ni compound.
上記のように高温または高湿化に置かれたウェハの電極表面にＮｉ酸化物等のＮｉ化合物が形成され、はんだ濡れ性やワイヤボンディング性が悪くなる。はんだ搭載やワイヤボンディング前にプラズマ処理等のドライエッチングは一般的に実施されているが、Ｎｉ化合物が特定パッドに形成されている場合、正常パッドのＡｕ皮膜がプラズマ処理により除去され、Ａｕ皮膜が除去された箇所の特性が悪くなる場合がある。
本発明は、正常パッドのＡｕ皮膜を除去することなく、ウェハの電極表面に形成されたＮｉ化合物のみを除去することができ、はんだ濡れ性やワイヤボンディング性を改善することができる処理液を提供することを目的とする。
As described above, a Ni compound such as Ni oxide is formed on the electrode surface of the wafer placed at high temperature or high humidity, so that the solder wettability and the wire bonding property are deteriorated. Dry etching such as plasma treatment is generally performed before solder mounting or wire bonding. However, when Ni compound is formed on a specific pad, the Au film of the normal pad is removed by plasma treatment, and the Au film is removed. The characteristic of the removed part may deteriorate.
The present invention provides a processing solution that can remove only the Ni compound formed on the electrode surface of the wafer without removing the Au film of the normal pad, and can improve solder wettability and wire bonding property. The purpose is to do.
本発明者らは鋭意検討を行った結果、以下により上記課題が解決されることを見出し、本発明に至った。
即ち、本発明は以下のとおりである。
（１）Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有する半導体用ウェハの前記Ａｕ皮膜表面を、ワイヤボンディングまたははんだ接合前に処理する処理液であって、酸性の水溶液であることを特徴とする処理液。
（２）前記処理液が、ハロゲン化水素、硫酸、ホウ酸、リン酸、有機スルフォン酸、有機カルボン酸の中から選ばれる１種類以上を含有することを特徴とする前記（１）に記載の処理液。
（３）前記処理液が、界面活性剤を含有することを特徴とする前記（１）又は（２）に記載の処理液。
（４）前記Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜が、無電解めっきで形成されてなることを特徴とする前記（１）〜（３）のいずれか一項に記載の処理液。
（５）Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有し、前記Ａｕ皮膜表面が、ワイヤボンディングまたははんだ接合前に前記（１）〜（４）のいずれか一項に記載の処理液を用いて処理されてなることを特徴とする半導体用ウェハ。
（６）Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有する半導体用ウェハの前記Ａｕ皮膜表面を、ワイヤボンディングまたははんだ接合前に前記（１）〜（４）のいずれか一項に記載の処理液を用いて処理することを特徴とする半導体用ウェハの処理方法。
尚、本発明においてめっき皮膜の層構成を「／」を用いて表す。例えば、前記Ｎｉ／Ａｕ皮膜は、Ｎｉ皮膜と、Ａｕ皮膜が順に積層されていることを表す。
As a result of intensive studies, the present inventors have found that the above problems can be solved by the following, and have reached the present invention.
That is, the present invention is as follows.
(1) A treatment liquid for treating the surface of the Au film of a semiconductor wafer having an electrode coated with a Ni / Au film or Ni / Pd / Au film before wire bonding or solder bonding, and an acidic aqueous solution. A processing solution characterized by being.
(2) The processing solution contains one or more selected from hydrogen halide, sulfuric acid, boric acid, phosphoric acid, organic sulfonic acid, and organic carboxylic acid, as described in (1) above Treatment liquid.
(3) The processing liquid according to (1) or (2), wherein the processing liquid contains a surfactant.
(4) The treatment liquid according to any one of (1) to (3), wherein the Ni / Au coating or the Ni / Pd / Au coating is formed by electroless plating.
(5) It has an electrode coated with a Ni / Au coating or a Ni / Pd / Au coating, and the surface of the Au coating is in any one of (1) to (4) before wire bonding or solder bonding. A semiconductor wafer, which is processed using the processing solution described.
(6) The surface of the Au film of a semiconductor wafer having an electrode coated with a Ni / Au film or a Ni / Pd / Au film is any one of (1) to (4) before wire bonding or solder bonding. A method for processing a semiconductor wafer, wherein the processing liquid is processed using the processing liquid according to the item.
In the present invention, the layer structure of the plating film is represented by “/”. For example, the Ni / Au coating indicates that a Ni coating and an Au coating are sequentially laminated.
本発明の処理液を用いて、Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有する半導体用ウェハの前記Ａｕ皮膜表面を、ワイヤボンディングまたははんだ接合前に処理することにより、はんだ濡れ性やワイヤボンディング性が改善する。さらに、歩留りが向上する。 By using the treatment liquid of the present invention, the surface of the Au film of a semiconductor wafer having an electrode coated with a Ni / Au film or a Ni / Pd / Au film is treated before wire bonding or solder bonding, whereby solder Improves wettability and wire bonding. Furthermore, the yield is improved.
本発明の処理液は、Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有する半導体用ウェハの前記Ａｕ皮膜表面を、ワイヤボンディングまたははんだ接合前に処理する処理液であって、酸性の水溶液である。
高温または高湿化に置かれたウェハは、前記Ａｕ皮膜表面にＮｉ化合物が形成され、はんだ濡れ性やワイヤボンディング性が悪くなる。
本発明においては、Ａｕ皮膜表面を、酸性水溶液で処理することにより、Ｎｉ化合物が発生していない正常部の表面のＡｕ皮膜を除去することなく、Ｎｉ化合物を十分に除去することができ、はんだ濡れ性やワイヤボンディング性が改善する。
前記Ｎｉ化合物としては、Ｎｉ酸化物（Ｎｉ2Ｏ3、ＮｉＯ）、Ｎｉ水酸化物（Ｎｉ(ＯＨ)2）が挙げられる。
The treatment liquid of the present invention is a treatment liquid for treating the Au film surface of a semiconductor wafer having an electrode coated with a Ni / Au film or a Ni / Pd / Au film before wire bonding or solder bonding, It is an acidic aqueous solution.
In a wafer placed at high temperature or high humidity, a Ni compound is formed on the surface of the Au film, resulting in poor solder wettability and wire bondability.
In the present invention, by treating the surface of the Au film with an acidic aqueous solution, the Ni compound can be sufficiently removed without removing the Au film on the surface of the normal part where the Ni compound is not generated. Improves wettability and wire bonding.
Examples of the Ni compound include Ni oxide (Ni 2 O 3 , NiO) and Ni hydroxide (Ni (OH) 2 ).
酸性水溶液は、表面のＮｉ化合物が溶解し、Ａｕ皮膜が溶解しないように、酸の種類、酸濃度や処理温度、処理時間を調整すればよい。本発明においては、Ｎｉ化合物はＡｕ上に形成されているので、酸処理によりきれいに除去することができる。また、比較的弱い酸でマイルドな条件で処理することが可能である。ここで、アルカリ溶液では、Ｎｉ化合物はほとんど溶解しないため、好ましくない。
酸の種類は、無機酸や有機酸のどちらでもよく、ハロゲン化水素（フッ酸、塩酸、臭化水素酸）、硫酸、ホウ酸、リン酸、有機スルフォン酸（メタンスルフォン酸、エタンスルフォン酸、ベンゼンスルフォン酸、トルエンスルフォン酸等）、有機カルボン酸（ギ酸、酢酸、プロピオン酸、クエン酸等）等が挙げられる。このなかで、硫酸、塩酸、リン酸、メタンスルフォン酸が安価でウェハへのダメージが少ないため好ましい。これら酸は単独またはそれらの混合物を水溶液にしたものを用いる。
酸濃度は酸の種類によって異なるが、０．１質量％〜５０質量％程度が好ましい。ウェハダメージの観点から、より好ましくは、０．１質量％〜１０質量％である。温度は１０〜６０℃程度が取り扱いやすいため好ましい。
処理時間は、特に規定はないが、表面に存在するＮｉ化合物の量によって時間を変えることが必要である。短すぎるとＮｉ化合物が一部残存し、長すぎるとウェハへのダメージが懸念される。一般的には数秒から数十分が適当である。ウェハへのダメージの影響がなければ、Ｎｉ化合物が完全に除去できる時間よりも長めに設定することが好ましい。
処理方法は、浸漬や、シャワーやスプレーで吹き付ける方法で処理を行うことができる。処理を行ってあとは、酸の成分が残存しないように十分に水洗することが必要である。
In the acidic aqueous solution, the kind of acid, the acid concentration, the treatment temperature, and the treatment time may be adjusted so that the Ni compound on the surface dissolves and the Au film does not dissolve. In the present invention, since the Ni compound is formed on Au, it can be removed cleanly by acid treatment. Moreover, it is possible to process it under mild conditions with a relatively weak acid. Here, the alkaline solution is not preferable because the Ni compound hardly dissolves.
The acid may be either an inorganic acid or an organic acid, such as hydrogen halide (hydrofluoric acid, hydrochloric acid, hydrobromic acid), sulfuric acid, boric acid, phosphoric acid, organic sulfonic acid (methanesulfonic acid, ethanesulfonic acid, Benzene sulfonic acid, toluene sulfonic acid, etc.), organic carboxylic acids (formic acid, acetic acid, propionic acid, citric acid, etc.) and the like. Among these, sulfuric acid, hydrochloric acid, phosphoric acid, and methanesulfonic acid are preferable because they are inexpensive and cause little damage to the wafer. These acids are used alone or a mixture thereof in an aqueous solution.
The acid concentration varies depending on the type of acid, but is preferably about 0.1% by mass to 50% by mass. From the viewpoint of wafer damage, it is more preferably 0.1% by mass to 10% by mass. The temperature is preferably about 10 to 60 ° C. because it is easy to handle.
The treatment time is not particularly defined, but it is necessary to change the time depending on the amount of Ni compound present on the surface. If it is too short, a part of the Ni compound remains, and if it is too long, there is a concern about damage to the wafer. Generally, several seconds to several tens of minutes are appropriate. If there is no influence of damage to the wafer, it is preferable to set the time longer than the time during which the Ni compound can be completely removed.
The treatment can be carried out by dipping or spraying with a shower or spray. After the treatment, it is necessary to sufficiently wash with water so that the acid component does not remain.
また、本発明の処理剤に、界面活性剤等の水濡れ性を向上させるような添加剤を加えるとより効果的になる。界面活性剤の種類としては、非イオン性、カチオン性、アニオン性のいずれでもよい。
添加剤の濃度は、界面活性剤の種類によって異なるが、水濡れ性の向上の観点から０．１〜１０％が好ましい。
Moreover, it will become more effective when the additive which improves water wettability, such as surfactant, is added to the processing agent of this invention. The type of surfactant may be any of nonionic, cationic and anionic.
The concentration of the additive varies depending on the type of the surfactant, but is preferably 0.1 to 10% from the viewpoint of improving water wettability.
前記電極は、半導体用ウェハの電極となるものであり、Ａｌ、Ａｌ合金、ＣｕまたはＣｕ合金であることが好ましい。
上述したＡｌまたはＡｌ合金としては、半導体用ウェハの電極として用いられている公知のアルミニウム系のものでよく、例えば純アルミニウム、ＡｌＣｕ（０．５％）、ＡｌＳｉ（１％）等のアルミニウム合金等が使用できる。前記電極のＣｕまたはＣｕ合金としては、半導体用ウェハの電極として用いられている公知の銅系のものでよく、例えば、純銅、リン青銅等の銅および銅合金が使用できる。
前記Ａｌ合金は、Ａｌの含有量が５０質量％を超えるものが好ましく、Ｃｕ合金は、Ｃｕの含有量が５０質量％を超えるものが好ましい。
ウェハの内部構造及び表面にＡｌ電極またはＣｕ電極を形成する工程は、半導体デバイスの製造に必要な公知のウェハ加工工程であり、例えば、フォトリソグラフィー、エッチング、イオン注入、スパッタリング、ＣＶＤ等の公知の方法によって行うことができる。また、この工程に用いる装置としても、公知の任意の装置を用いることができる。
The electrode serves as an electrode of a semiconductor wafer and is preferably Al, Al alloy, Cu or Cu alloy.
The Al or Al alloy described above may be a known aluminum-based material used as an electrode for a semiconductor wafer, for example, an aluminum alloy such as pure aluminum, AlCu (0.5%), AlSi (1%), etc. Can be used. The Cu or Cu alloy of the electrode may be a known copper-based material used as an electrode of a semiconductor wafer, and for example, copper and copper alloys such as pure copper and phosphor bronze can be used.
The Al alloy preferably has an Al content exceeding 50% by mass, and the Cu alloy preferably has a Cu content exceeding 50% by mass.
The process of forming an Al electrode or Cu electrode on the internal structure and surface of the wafer is a known wafer processing process necessary for manufacturing a semiconductor device. For example, a known process such as photolithography, etching, ion implantation, sputtering, CVD, etc. It can be done by the method. Also, any known apparatus can be used as the apparatus used in this step.
前記電極を被覆するＮｉ／Ａｕ皮膜、Ｎｉ／Ｐｄ／Ａｕ皮膜のＮｉ皮膜、Ｐｄ皮膜、Ａｕ皮膜は、どのような方法で形成しても良く、スパッタ、蒸着、電気めっき、無電解めっきのいずれの方法で形成してもよい。
スパッタ、蒸着、電気めっき、無電解めっきについては、既存の方法、条件で形成することができる。
低コストで形成できることから、前記Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜が無電解めっきで形成されることが好ましい。
無電解Ｎｉめっき、無電解Ｐｄめっき、無電解Ａｕめっきに用いられるめっき液、めっき条件としては、ＵＢＭ形成に用いられる一般的なめっき液、及びめっき条件でよい。
The Ni / Au coating, Ni / Pd / Au coating Ni coating, Pd coating, and Au coating covering the electrode may be formed by any method, and any of sputtering, vapor deposition, electroplating, and electroless plating may be used. You may form by the method of.
Sputtering, vapor deposition, electroplating, and electroless plating can be formed by existing methods and conditions.
The Ni / Au film or Ni / Pd / Au film is preferably formed by electroless plating since it can be formed at low cost.
The plating solution and plating conditions used for electroless Ni plating, electroless Pd plating, and electroless Au plating may be general plating solutions and plating conditions used for UBM formation.
上記Ｎｉ／Ａｕ皮膜、Ｎｉ／Ｐｄ／Ａｕ皮膜のＮｉ皮膜、Ｐｄ皮膜、Ａｕ皮膜の膜厚は、半導体デバイスの用途や要求特性により変わってくるが、Ｎｉ皮膜は、はんだ接合の際には、はんだの拡散防止の観点から、０．３〜１０μｍが好ましく、より好ましくは、０．８〜５μｍである。
Ｐｄ皮膜の厚さは、Ｎｉの拡散防止の観点から、０．０１〜０．５μｍが好ましく、より好ましくは、０．０１〜０．１μｍである。
Ａｕ皮膜の厚さは、半田濡れ性の観点から、０．０１〜０．５μｍが好ましく、より好ましくは、０．０１〜０．１μｍである。
The film thickness of the Ni / Au film, Ni / Pd / Au film, Ni film, Pd film, and Au film varies depending on the application and required characteristics of the semiconductor device. From the viewpoint of preventing the diffusion of solder, the thickness is preferably 0.3 to 10 μm, and more preferably 0.8 to 5 μm.
The thickness of the Pd film is preferably 0.01 to 0.5 μm, more preferably 0.01 to 0.1 μm, from the viewpoint of preventing Ni diffusion.
The thickness of the Au film is preferably 0.01 to 0.5 μm, more preferably 0.01 to 0.1 μm, from the viewpoint of solder wettability.
本発明の半導体用ウェハは、Ｎｉ／Ａｕ皮膜またはＮｉ／Ｐｄ／Ａｕ皮膜で被覆された電極を有し、前記Ａｕ皮膜表面が、ワイヤボンディングまたははんだ接合前に本発明の処理液を用いて処理されてなる。
本発明の処理液を用いて処理することにより、Ｎｉ化合物が発生していない正常部の表面のＡｕ皮膜を除去することなく、Ｎｉ化合物を十分に除去することができ、はんだ濡れ性やワイヤボンディング性が改善する。
The semiconductor wafer of the present invention has an electrode coated with a Ni / Au film or a Ni / Pd / Au film, and the surface of the Au film is treated with the treatment liquid of the present invention before wire bonding or solder bonding. Being done.
By treating with the treatment liquid of the present invention, the Ni compound can be sufficiently removed without removing the Au film on the surface of the normal part where no Ni compound is generated, and solder wettability and wire bonding can be achieved. Improves.
以下、実施例を挙げて本発明を更に詳細に説明する。
実施例１〜実施例８
パッド径２００μｍ、Ｎ型パッド、Ｐ型パッドの抵抗が１ｋΩ、電位差が１００Ｌｕｘで０．４ＶのＴＥＧウェハに、Ｎｉ（３μｍ）／Ａｕ（０．０５μｍ）皮膜、またはＮｉ（３μｍ）／Ｐｄ（０．０５μｍ）／Ａｕ（０．０３μｍ）皮膜を、無電解めっきでめっきを行い形成した。そのウェハを表１に示した熱処理、または恒温恒湿槽に入れることにより、Ｎｉ化合物をめっき表面に形成させた。このＮｉ化合物が形成されたＴＥＧウェハを表１に示した酸性溶液および条件で処理し、その後水洗を行った。外観を顕微鏡で確認した。その結果を表１に示す。
その後、はんだ接合性とワイヤボンディング性について以下の条件で評価した。その結果も表１に示す。
Hereinafter, the present invention will be described in more detail with reference to examples.
Examples 1 to 8
Ni (3 μm) / Au (0.05 μm) coating or Ni (3 μm) / Pd (0) on a TEG wafer with a pad diameter of 200 μm, N-type pad, P-type pad resistance of 1 kΩ, potential difference of 100 Lux and 0.4 V .05 μm) / Au (0.03 μm) film was formed by electroless plating. The Ni compound was formed on the plating surface by placing the wafer in the heat treatment shown in Table 1 or in a constant temperature and humidity chamber. The TEG wafer on which this Ni compound was formed was treated with the acidic solution and conditions shown in Table 1, and then washed with water. The appearance was confirmed with a microscope. The results are shown in Table 1.
Thereafter, the solderability and wire bonding properties were evaluated under the following conditions. The results are also shown in Table 1.
はんだ接合性：
前記酸性溶液で処理したパッド上にＷＦ−６３００ＬＦ（千住金属製水溶性フラックス）を塗布し、ＳｎＡｇ（３％）Ｃｕ（０．５％）の半田ボール（ボール径４５０μｍ）を載せた。その後ピーク温度２６０℃（４０秒）、酸素濃度６００〜８００ｐｐｍの条件でリフローを行い、はんだをパッドに接合させた。
はんだ接合性は、シェア試験を行い、はんだ内部の破壊の場合良好であると判断した。めっき／はんだ界面の破壊やはんだが接合しない場合は不良と判断した。シェア試験の条件は、シェア速度３００μｍ／秒、シェア高さ１５μｍとした。
Solder bondability:
WF-6300LF (water-soluble flux made by Senju Metal) was applied on the pad treated with the acidic solution, and a solder ball (ball diameter: 450 μm) of SnAg (3%) Cu (0.5%) was placed thereon. Thereafter, reflow was performed under conditions of a peak temperature of 260 ° C. (40 seconds) and an oxygen concentration of 600 to 800 ppm, and the solder was joined to the pad.
Solder bondability was determined to be good in the case of fracture inside the solder through a shear test. When the plating / solder interface was broken or the solder did not join, it was judged as defective. The conditions for the shear test were a shear rate of 300 μm / second and a shear height of 15 μm.
ワイヤボンディング性：
Ａｕワイヤ径２５μｍ、ヒーター温度１２０℃とし、１ｓｔボンド条件を超音波２００ｍＶ、荷重２２０ｍＮ、２００秒とし、２ｎｄボンド条件を超音波２２０ｍＶ、荷重２４０ｍＮ、２００秒として、Ａｕワイヤを前記酸性溶液で処理したパッドと接合した。
ワイヤボンディングの接合性評価についてはプル試験を行い、Ａｕワイヤでちぎれた場合良好であると判断した。めっき／Ａｕワイヤ界面の破壊やワイヤが接合しない場合は不良と判断した。
Wire bonding property:
Au wire diameter was 25 μm, heater temperature was 120 ° C., 1st bond condition was ultrasonic 200 mV, load 220 mN, 200 seconds, 2nd bond condition was ultrasonic 220 mV, load 240 mN, 200 seconds, and the Au wire was treated with the acidic solution. Bonded to the pad.
For the bondability evaluation of wire bonding, a pull test was performed, and it was judged that it was good when it was torn with an Au wire. When the plating / Au wire interface was broken or the wire was not bonded, it was judged as defective.
比較例１〜７
表２に示した条件で無電解めっき、熱処理または恒温恒湿処理を行い、めっき表面にＮｉ化合物を形成させた以外は実施例１と同様にＮｉ化合物が形成されたＴＥＧウェハを得た。その後、表２に示した方法および条件で処理し、水洗を行った。その後、外観、はんだ接合性、ワイヤボンディング性を実施例と同じ方法で評価した。それぞれの結果を表２に示す。
Comparative Examples 1-7
A TEG wafer on which a Ni compound was formed was obtained in the same manner as in Example 1 except that electroless plating, heat treatment, or constant temperature and humidity treatment was performed under the conditions shown in Table 2 to form a Ni compound on the plating surface. Then, it processed by the method and conditions shown in Table 2, and washed with water. Thereafter, the appearance, solder bondability, and wire bondability were evaluated in the same manner as in the examples. The results are shown in Table 2.
Claims (6)
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| JPH08139148A (en) * | 1994-11-10 | 1996-05-31 | Matsushita Electric Works Ltd | Inspection method of wire bondability of conductor circuit |
| JP2001140084A (en) * | 1999-08-27 | 2001-05-22 | Mec Kk | Etching solution for nickel or nickel alloy |
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