JP2017017164A - Semiconductor integrated device and control method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the local generation of heat in an integrated circuit and suppress an erroneous operation of the integrated circuit due to heat.SOLUTION: An integrated circuit device having a plurality of integrated circuits which are stacked in a multiple stages includes: a temperature information acquisition unit that obtains temperature information of a first integrated circuit; and an operation control unit that controls the operation of a circuit part in a second integrated circuit which is stacked in adjacent to the first integrated circuit, on the basis of the obtained temperature information.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a technique for stacking integrated circuits in multiple stages.

  In recent years, market demands for product miniaturization, high functionality, and power saving are increasing. In response to this demand, in the semiconductor industry, three-dimensional mounting employing TSV (Through Silicon Via) has attracted attention.

  For example, a new LSI integrated with a high density in which memory devices are stacked on an upper layer of an LSI (Large Scale Integrated Circuit) incorporating a plurality of functions has been developed. Furthermore, development of a form in which another LSI is stacked on the upper layer of the LSI is also progressing.

  By adopting TSV, it is possible to achieve higher circuit integration, expansion of the communication bus band between chips, and lower power consumption than in the past. For example, the printed circuit board can be reduced in size by 3D mounting other ICs such as memory devices and other LSIs in the direction perpendicular to the LSIs. In addition, by using a through electrode that allows wiring through a device, it is possible to improve timing by shortening signal wiring between chips and reduce power consumption by reducing parasitic capacitance. Further, while the wiring of the conventional printed circuit board has a wiring width of about 100 μm, the diameter of the through electrode is about several μm to 10 μm, and the mounting efficiency can be improved by making the wiring thinner.

  On the other hand, in the three-dimensional mounting using the TSV, the thermal resistance in the vertical direction becomes very low compared to the conventional mounting due to the thinning of the LSI. As a result, the LSIs stacked one above the other are easily affected by heat generation from each other, and the possibility of malfunctioning of the LSIs affected by heat increases. Therefore, as a technique for reducing the influence of heat generation and preventing malfunction, there are a technique of arranging a heat insulating material between LSIs and a technique of arranging a heat sink.

JP 2005-347390 A

  However, if the film thickness is further reduced in the future, it is expected that the heat cannot be sufficiently dispersed only by the measures using the heat insulating material and the heat sink as described in Patent Document 1. In order to eliminate the possibility of malfunction due to heat, it is necessary to operate each circuit module of the LSI so that large heat (heat hot spot) is not locally generated on the LSI.

In order to solve this problem, for example, an integrated circuit device of the present invention has the following configuration. That is,
An integrated circuit device having a plurality of integrated circuits stacked in multiple stages,
Temperature information acquisition means for acquiring temperature information of the first integrated circuit;
Operation control means for controlling the operation of the circuit portion in the second integrated circuit stacked adjacent to the first integrated circuit based on the temperature information.

  According to the present invention, it is possible to prevent the integrated circuit from locally generating heat and to prevent malfunction of the integrated circuit due to heat.

The basic block block diagram of a semiconductor device. The figure which shows the information memorize | stored in the memory | storage part of a temperature determination part. Implementation diagram of the proposal The flowchart of the temperature determination part of 1st Embodiment The figure explaining the criterion of the temperature determination part of 1st Embodiment Flowchart of the operation control unit of the first embodiment The basic block block diagram in 2nd Embodiment. The figure which shows the temperature information which the temperature estimation part of 2nd Embodiment has.

  Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

[First Embodiment]
The first embodiment will be described below with reference to FIGS. FIG. 1 is a basic configuration diagram of a semiconductor integrated device 100 according to the first embodiment.

  The semiconductor integrated device 100 includes two integrated circuits 101 and 102. The integrated circuits 101 and 102 may be any purpose LSI. However, the integrated circuit 101 in the embodiment includes a fourth circuit unit 301, a fifth circuit unit 302, and a sixth circuit unit 303 that constitute an LSI. In addition, the integrated circuit 101 includes the first temperature information acquisition unit 103 and the first temperature information acquisition unit 103 at positions corresponding to the three circuit units (reference numerals 108 to 110) mounted on the integrated circuit 102 in the festival stacked with the integrated circuit 102. 2 temperature information acquisition unit 104 and third temperature information acquisition unit 105. These three first to third temperature information acquisition units 103 to 105 are arranged in main circuit units constituting the integrated circuit 101. The integrated circuit 102 includes a first circuit portion 108, a second circuit portion 109, and a third circuit portion 110. The integrated circuit 102 further includes a temperature determination unit 106 and an operation control unit 107.

  The first to third temperature information acquisition units 103 to 105 detect the temperatures of the positions where the integrated circuits 101 are arranged, and supply temperature information indicating the detected temperatures to the temperature determination unit 106 of the integrated circuit 102. To do. Here, the unit time (interval) for acquiring the temperature information by the first to third temperature information acquisition units 103 to 105 is not particularly limited, but is 1 millisecond here. The fourth to sixth circuit units 301 to 303 mounted on the integrated circuit 100 are assumed to operate at a fixed clock frequency, and will be described as not being subject to temperature control.

  The temperature determination unit 106 determines an operating frequency that can be used by each corresponding circuit unit in the integrated circuit 101 from the temperature information supplied from the first to third temperature information acquisition units 103 to 105, and indicates the determination result. Information is supplied to the operation control unit 107 as a frequency change command. The frequency change command includes information for setting the frequency division ratio of the operation control unit 107, for example.

  Moreover, the temperature determination part 106 has a memory | storage part not shown for memorize | storing the table which showed the relationship between temperature information and a frequency as shown to Fig.2 (a)-(c). The temperature determination unit 106 also includes a writable memory (register or RAM), and writes the temperature information supplied from the first to third temperature information acquisition units 103 to 105 into the memory along with the time. The table information is determined in advance by simulation or the like. Also, the numerical values shown in FIGS. 2A to 2C are numerical values for explaining the first embodiment, and actually change for each system, and are limited to these numerical values. is not.

  FIG. 2A is a table showing the high temperature side reference temperature. The high temperature side reference temperature indicates a temperature at which the allowable temperature of the integrated circuit 101 is predicted to be exceeded when the first to third circuit units 108 to 110 are normally operated. This temperature is a temperature having a certain margin, and even if this temperature is exceeded, it does not mean that the corresponding circuit unit immediately fails to operate normally. Further, since the ease of heat transfer from the integrated circuit 102 to the integrated circuit 101 differs depending on the areas of the integrated circuits 101 and 102, different reference temperatures are set for each area.

  FIG. 2B is a table showing the low temperature side reference temperature. The low temperature side reference temperature indicates a temperature at which the operation of the integrated circuit 101 is predicted not to malfunction even when the first to third circuit units 108 to 110 are normally operated. Further, since the ease of heat transfer from the integrated circuit 102 to the integrated circuit 101 differs depending on the areas of the integrated circuits 101 and 102, different reference temperatures are set for each area.

  FIG. 2C is a table showing operating frequencies set in each circuit unit in accordance with temperature changes. The operating frequency of the circuit unit corresponding to the temperature change is set to a value obtained by confirming in advance by simulation that the operating frequency does not reach the allowable temperature at which the malfunction of the operation of the integrated circuit 101 occurs due to the gradient of the temperature change.

  The operation control unit 107 receives a frequency change command from the temperature determination unit 106 and a clock signal that is a basis for the operations of the first to third circuit units 108 to 110. And then. The operation control unit 107 outputs a drive clock signal obtained by frequency-dividing a clock signal for driving the first to third circuit units 108 to 110 based on the frequency change command.

  Each of the first to third circuit units 108 to 110 receives the drive clock signal from the operation control unit 107 and performs various processes at an operation frequency based on the drive clock signal.

  The configuration and basic operation of the semiconductor integrated device 100 in this embodiment have been described above. In the first embodiment, the integrated circuits 101 and 102, the first to third temperature information acquisition units 103 to 105, and the first to third circuit units 108 to 110 are described. However, the number is limited to this number. It doesn't have to be, it doesn't matter how many. It should be understood that this is merely an example.

  Next, how the integrated circuit 101 and the integrated circuit 102 are three-dimensionally connected will be described with reference to FIG.

  The integrated circuit 101 and the integrated circuit 102 are connected by using a number of TSVs (Through Silicon Vias) 304 for both signal connections. The temperature information acquired by the first to third temperature information acquisition units 103 to 105 is transferred to the temperature determination unit 106 via the TSV 304. Similarly, data is transferred between the first to third circuit units 108 to 110 of the integrated circuit 102 and the circuit unit of the integrated circuit 101 via the TSV 304. Note that when the TSV 304 is used to connect the integrated circuit 101 and the integrated circuit 102, micro bumps may be arranged on the path of the TSV 304. The micro bump is a protrusion formed by plating on an electrode portion used when connecting an integrated circuit.

  The operation until the temperature determination unit 106 outputs a frequency change command based on the temperature information input from the first temperature information acquisition unit 103 will be described with reference to FIG. The temperature information supplied from the first temperature information acquisition unit 103 to the temperature determination unit 106 will be described below by defining the acquired temperature information and name. Similarly, the temperature information written in the storage unit (not shown) of the temperature determination unit 106 will be described with the storage temperature information and name defined.

  When the first temperature information acquisition unit 103 acquires temperature information, the flow of FIG. 4 starts. First, in step S401, the temperature determination unit 106 compares the acquired temperature information acquired by the first temperature information acquisition unit 103 with the high temperature side reference temperature. In step S401a, the comparison is determined. If the determination result indicates that the acquired temperature information is equal to or higher than the high temperature side reference temperature, the process proceeds to step S402. If the determination result indicates that the acquired temperature information is less than the high temperature side reference temperature, the process proceeds to step S407.

  In step S402, the temperature determination unit 106 reads stored temperature information stored in a storage unit (not shown) that the temperature determination unit 106 has. In step S403, the temperature determination unit 106 compares the read stored temperature information with the acquired temperature information (information indicating the current temperature) acquired by the first temperature information acquisition unit 103. In step S403a, a comparison is made. If the determination result indicates that the acquired temperature information is greater than or equal to the stored temperature information, that is, indicates that the temperature is rising, the process proceeds to step S404. If the determination result indicates that the acquired temperature information is lower than the stored temperature information, the process proceeds to step S406.

  In step S <b> 404, the temperature determination unit 106 calculates the gradient of the temperature change between the acquired temperature information and the stored temperature information because the acquired temperature information is determined to be greater than or equal to the stored temperature information. Note that when calculating the gradient, information on the time change with respect to the temperature change is required, but since the temperature information is acquired every 1 millisecond, the information on this period may be used as the information on the time change. And then. In step S405, the temperature determination unit 106 acquires the value of the operating frequency corresponding to the gradient of the temperature change calculated in step S405 from the information of the first circuit unit 108 in the table shown in FIG. Then, the temperature determination unit 106 outputs a frequency change command for instructing the change to the acquired operation frequency to the operation control unit 107.

  In step S406, the temperature determination unit 106 stores the acquired temperature information acquired from the first temperature information acquisition unit 103 as storage temperature information in a storage unit (not illustrated) included in the temperature determination unit 106.

  On the other hand, when the process proceeds to step S407, the temperature determination unit 106 performs a comparison determination between the acquired temperature information acquired by the first temperature information acquisition unit 103 and the low-temperature side reference temperature. In step S407a, a comparison is determined. If the determination result indicates that the acquired temperature information is equal to or lower than the low temperature side reference temperature, the process proceeds to step S408. When the determination result indicates that the acquired temperature information exceeds the low temperature side reference temperature, the process proceeds to step S406.

  In step S408, the temperature determination unit 106 reads out stored temperature information stored in a storage unit (not shown). In step S409, the temperature determination unit 106 compares the read stored temperature information with the acquired temperature information acquired by the first temperature information acquisition unit 103. In step S409a, the comparison is determined. If the determination result indicates that the acquired temperature information is equal to or lower than the stored temperature information, that is, if the temperature is decreasing, the process proceeds to step S410. When the determination result indicates that the acquired temperature information is lower than the stored temperature information, the process proceeds to step S406.

  In step S <b> 410, the temperature determination unit 106 determines that the acquired temperature information is equal to or lower than the stored temperature information. Therefore, the temperature determination unit 106 issues a frequency change command for changing the operating frequency of the first circuit unit 108 (to increase the frequency). Output to.

  In addition, although the example in which the acquired temperature information is acquired from the first temperature information acquisition unit 103 is described here, the temperature information is also acquired from the second temperature information acquisition unit 104 or the third temperature information acquisition unit 105. The temperature determination unit 106 performs the same processing.

  FIG. 5 explains the temperature change of the integrated circuit 101 based on the determination using the information on the high temperature side reference temperature and the low temperature side reference temperature stored in the temperature determination unit 106.

  When the integrated circuit 102 operates, the temperature of the integrated circuit 101 rises due to heat conduction, and when the temperature continues to rise, the operation of the integrated circuit 101 may exceed an allowable temperature. Therefore, the high temperature side reference temperature is set below the allowable temperature, and the temperature determination unit 106 determines that the temperature of the integrated circuit 101 is equal to or higher than the high temperature side reference temperature at time (timing) t1. As a result of this determination, the temperature determination unit 106 outputs a command to limit the operation of the integrated circuit 102 so that the temperature of the integrated circuit 101 does not exceed the allowable temperature, so that the temperature of the integrated circuit 101 decreases.

  Further, the low temperature side reference temperature is set to be equal to or lower than the high temperature side reference temperature, and the temperature determination unit 106 determines that the temperature of the integrated circuit 101 has become equal to or lower than the low temperature side reference temperature at time t2. As a result of this determination, the temperature determination unit 106 releases the restriction on the operation of the integrated circuit 102 and outputs a command for normal operation, so that the temperature of the integrated circuit 101 starts to rise again.

  Thus, by setting the high temperature side reference temperature and the low temperature side reference temperature, the temperature of the integrated circuit 101 can be changed substantially within the allowable temperature range.

  Next, a control procedure performed by the operation control unit 107 for the first circuit unit 108 will be described with reference to FIG.

  The operation control unit 107 performs the following processing when receiving a frequency change command from the temperature determination unit 106.

  First, in step S <b> 601, the operation control unit 107 determines a divided clock signal to be supplied to the first circuit unit 108 based on a frequency change command regarding the first circuit unit 108 input from the temperature determination unit 106. As a method of determining the division ratio, for example, based on the frequency change command, the division ratio may be determined from the input clock signal and the value of the designated frequency so that the frequency designated for each circuit unit is obtained. . Specifically, this can be realized by providing a selector circuit that automatically calculates a necessary frequency division ratio based on a frequency change command and switches the frequency.

  In step S602, operation control unit 107 divides the clock signal based on the determined division ratio to generate a divided clock signal. In step S <b> 603, the operation control unit 107 starts supplying the generated divided clock signal to the first circuit unit 108.

  The operation control unit 107 can change the operating frequency of the first circuit unit 108 by the procedure described above. Although the procedure for changing the operating frequency of the first circuit unit 108 is described here, the operating frequency of the second circuit unit 109 and the third circuit unit 110 can be changed in the same procedure.

The above description is summarized by focusing on the first circuit unit 108 as follows. The corresponding high temperature side reference temperature “100” in FIG. 2A is defined as a threshold value T _H indicating the upper temperature limit, and the corresponding low temperature side reference temperature “55” in FIG. 2B is defined as the threshold value T _L indicating the temperature lower limit. . That is, the temperature of 55 to 100 ° is defined as the normal range. The temperature of the current material (acquired temperature information) is defined as T, and the temperature (stored temperature information) one millisecond before is defined as _TPRE .
When T ≧ T _H (above the upper limit) and T ≧ T _PRE (during temperature increase), the frequency of the drive clock of the first circuit unit 108 is lowered according to the temperature gradient.
When T ≦ T _L (below the lower limit) and T ≦ T _PRE (during temperature drop), the frequency of the drive clock of the first circuit unit 108 is increased according to the temperature gradient.
-In all other cases, the current state is maintained (the drive recording frequency is not changed).

  According to the above procedure, it is possible to suppress local heat generation of the stacked integrated circuits and to suppress malfunction of the integrated circuits due to heat.

[Second Embodiment]
In the first embodiment, the operation frequency of each circuit unit of the integrated circuit 102 is set based on the temperature information of the integrated circuit 101. In the second embodiment, temperature information of the integrated circuit 706 is acquired and the operating frequency is changed.

  FIG. 7 shows a configuration example in the semiconductor integrated device 100 of the second embodiment. The semiconductor integrated device 100 includes two integrated circuits 705 and an integrated circuit 706. The integrated circuit 705 and the integrated circuit 706 are stacked and connected by the TSV 304.

  Here, the integrated circuit 705 includes a fourth circuit portion 301, a fifth circuit portion 302, and a sixth circuit portion 303.

  The integrated circuit 706 includes a first circuit unit 108, a second circuit unit 109, and a third circuit unit 110, as in the first embodiment. The integrated circuit 706 further includes a fourth temperature information acquisition unit 701, a fifth temperature information acquisition unit 702, a sixth temperature information acquisition unit 703, a temperature estimation unit 704, a temperature determination unit 106, and an operation control unit 107. Have

  The configurations and processes of the fourth to sixth circuit units 301 to 303, the temperature determination unit 106, the operation control unit 107, and the first to third circuit units 108 to 110 are the same as those in the first embodiment. The description is omitted. Below, only the structure and process of the 4th thru | or 6th temperature information acquisition part 701-703 and the temperature estimation part 704 are demonstrated.

  The fourth to sixth temperature information acquisition units 701 to 703 acquire the temperature information of the region where the first to third circuit units 108 to 110 of the integrated circuit 706 are arranged, and the acquired temperature information is the integrated circuit 706. To the temperature estimation unit 704. In addition, although the period which acquires the temperature of the 4th thru | or 6th temperature information acquisition parts 701-703 shall be 1 millisecond similarly to 1st Embodiment, this is an example and even if it is another period, I do not care.

  The situation of the second embodiment is that, for example, the fourth to sixth temperature information acquisition units 701 to 703 in the second integrated circuit 706 are respectively used in the fourth to sixth circuit units 301 to 303 in the integrated circuit 705. And corresponding positions. That is, each of the fourth to sixth temperature information acquisition units 701 to 703 in the second integrated circuit 706 is convenient for estimating the temperatures of the fourth to sixth circuit units 301 to 303 in the integrated circuit 705. It shall be in position. However, the fourth to sixth temperature information acquisition units 701 to 703 and the first to third circuit units 108 to 110 are not close enough to estimate the distance. Given this situation, it is easy to understand.

  The temperature estimation unit 704 inputs the temperature information acquired by the fourth to sixth temperature information acquisition units 701 to 703, estimates the fourth to sixth circuit units 301 to 303 of the integrated circuit 705, and estimates Output temperature. The temperature information estimated here is equivalent to the output of the first to third temperature information acquisition units 103 to 105 of the first embodiment, and the subsequent processing of the temperature determination unit is the same as that of the first embodiment. There is no change.

  The temperature estimation unit 704 holds a table of temperature information of the fourth to sixth circuit units 301 to 303 estimated based on the acquired temperature information. By referring to this temperature information table, the temperatures of the fourth to sixth circuit units 301 to 303 are estimated. The means for estimating the temperatures of the fourth to sixth circuit units 301 to 303 using such a temperature information table is merely an example, and is not limited. For example, an arithmetic circuit may be mounted and estimated from the calculation. But it can be realized.

  FIG. 8 shows a table of temperature information held by the temperature estimation unit 704 in the second embodiment.

  Tr indicates temperature information acquired from the fourth to sixth temperature information acquisition units 301 to 303. Ts is temperature information determined in advance by simulation of heat conduction of the first to third circuit units 103 to 105 and the fourth to sixth circuit units 301 to 303.

  The value of Ts varies depending on the radius from the center of the TSV connection region, and also varies depending on the value of the temperature information Tr. The table shown in FIG. 8 has Ts as a table with Tr as the horizontal axis, the radius from the center of the TSV connection area as the vertical axis. For example, it can be estimated from the table of FIG. 8 that the radius of 0.1 mm from the center of the TSV connection region of the fourth circuit section 301 when Tr is 100 ° C. is 105 degrees.

  With the above procedure, even if the temperature information acquisition unit is mounted on a stacked integrated circuit system or an integrated circuit different from the first embodiment, the stacked integrated circuit is prevented from locally generating heat, It is possible to suppress malfunction of the integrated circuit due to heat.

  In the above embodiment, an example in which two integrated circuits are stacked has been described. However, three or more integrated circuits may be provided. In short, it should be understood that the first and second embodiments focus on two adjacent integrated circuits in an integrated circuit stacked in multiple stages.

  In the above embodiment, the number of temperature information acquisition units on the integrated circuit and the number of circuit units to be controlled by the drive clock are the same. However, when a plurality of temperature information acquisition units are positioned so as to surround one control target circuit unit, the temperature of the control target circuit unit can be estimated by linear interpolation of the plurality of temperatures. However, it is not always necessary for both to have the same number.

DESCRIPTION OF SYMBOLS 100 ... Semiconductor integrated device, 101, 102, 705, 706 ... Integrated circuit, 103 ... 1st temperature information acquisition part, 104 ... 2nd temperature information acquisition part, 105 ... 3rd temperature information acquisition part, 106 ... Temperature Judgment unit 107 ... operation control unit 108 ... first circuit unit 109 ... second circuit unit 110 ... third circuit unit 301 ... fourth circuit unit 302 ... fifth circuit unit 303 ... Sixth circuit unit, 304 ... TSV, 701 ... fourth temperature information acquisition unit, 702 ... fifth temperature information acquisition unit, 703 ... sixth temperature information acquisition unit, 704 ... temperature estimation unit

Claims (8)

An integrated circuit device having a plurality of integrated circuits stacked in multiple stages,
Temperature information acquisition means for acquiring temperature information of the first integrated circuit;
Operation control means for controlling the operation of the circuit unit in the second integrated circuit stacked adjacent to the first integrated circuit based on the temperature information;
An integrated circuit device comprising: The second integrated circuit has a plurality of circuit units to be controlled,
2. The integrated circuit according to claim 1, wherein the temperature information acquisition unit acquires each temperature in the first integrated circuit corresponding to a position of each of the plurality of circuit units in the second integrated circuit. Circuit device. The operation control means includes
Determination means for determining whether or not the temperature acquired by the temperature information acquisition means is in a preset normal range;
When it is determined by the determination means that the temperature is equal to or higher than the upper limit of the normal range and the temperature is increasing, or the temperature is equal to or lower than the lower limit of the normal range and the temperature is decreasing. And a changing unit that changes a frequency of a driving clock of a corresponding circuit unit in the second integrated circuit in accordance with a temperature change with respect to a unit time when it is determined. Integrated circuit device. The determination means includes
The integrated circuit device according to claim 3, wherein the temperature information acquired by the temperature information acquisition unit and the normal range stored in a storage unit are referred to. The changing means is
When it is determined by the determination means that the temperature acquired by the temperature information acquisition means is equal to or higher than the upper limit of the normal range and the temperature is increasing, the driving clock of the circuit unit is determined according to the temperature increase gradient. Lower
When it is determined by the determination unit that the temperature acquired by the temperature information acquisition unit is equal to or lower than the lower limit of the normal range and the temperature is decreasing, the driving clock of the circuit unit according to the gradient of the temperature decrease Process to raise
The integrated circuit device according to claim 3, wherein the determination unit does not change a drive clock to the circuit unit in cases other than the above. An integrated circuit device having a plurality of integrated circuits stacked in multiple stages,
Temperature information acquisition means for acquiring temperature information of the first integrated circuit;
Estimating means for estimating a temperature of a circuit portion of a second integrated circuit stacked adjacent to the first integrated circuit;
Based on the temperature estimated by the estimating means, operation control means for controlling the operation of the circuit portion at a position corresponding to the circuit portion of the second integrated circuit on the first integrated circuit;
An integrated circuit device comprising: A method of controlling an integrated circuit device having a plurality of integrated circuits stacked in multiple stages,
A temperature information acquisition step in which the temperature information acquisition means acquires the temperature information of the first integrated circuit; and
An operation control step, wherein the operation control means controls the operation of the circuit unit in the second integrated circuit stacked adjacent to the first integrated circuit based on the temperature information;
A method for controlling an integrated circuit device, comprising: A method of controlling an integrated circuit device having a plurality of integrated circuits stacked in multiple stages,
A temperature information acquisition step in which the temperature information acquisition means acquires the temperature information of the first integrated circuit; and
An estimating step for estimating a temperature of a circuit portion of a second integrated circuit stacked adjacent to the first integrated circuit;
Operation control means for controlling the operation of the circuit unit at a position corresponding to the circuit unit of the second integrated circuit on the first integrated circuit based on the temperature estimated in the estimating step. Process,
A method for controlling an integrated circuit device, comprising:

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