JP2016527658A - Method and system for adaptively scanning a sample during electron beam inspection - Google Patents

Abstract

The adaptive electron beam scanning system can include an inspection subsystem configured to scan the electron beam across the surface of the sample. The inspection subsystem can include a controller communicatively coupled to one or more portions of an electron beam source, a sample stage, a set of electron optical elements, a detector assembly, and an inspection subsystem. The controller evaluates one or more characteristics of one or more portions of the area of the inspection sample and adjusts one or more scanning parameters of the inspection subsystem in response to the evaluated one or more characteristics Can do.

Description

This application is related to the following listed applications (“Related Applications”) and claims the benefits of their earliest available effective filing date (eg, uses other than provisional patent applications) Provisional patents claiming the earliest possible priority date or any and all parent applications of the related application under the 35 USC 119 (e), the parent application of the parent, the parent application of the parent Claim the benefit of the application).
RELATED APPLICATIONS For the purposes of USPTO superlegal requirements, this application is entitled “METHODS OF IMPROVING THROUGHOUTITYSOUTITYOUTS ANDITS OUTSENSITY OUTSENSITIES OUTSITES, filed on April 27, 2013, invented by Gary Fan, David Chen, Vivekanand Kini and Hong Xiao. This constitutes the normal (non-provisional) patent application of US Provisional Patent Application No. 61 / 816,720 entitled “OF E-BEAM INSPECTION SYSTEM”.

  The present invention relates to electron beam sample inspection.

  In general, electron beam sample inspection is known.

U.S. Pat.No. 4,918,358

  The present invention provides an apparatus and method for adaptively scanning a sample during electron beam inspection.

  A system for adaptively scanning a sample during electron beam inspection is disclosed. In an exemplary embodiment, the system includes an inspection subsystem configured to scan the electron beam across the surface of the sample, the inspection subsystem including an electron beam source configured to generate the electron beam; A sample stage configured to fix a sample, a set of electron optical elements configured to direct an electron beam onto the sample, and a detector assembly including at least an electron collector, the detector comprising: It is configured to detect electrons from the surface. The inspection subsystem further includes a controller communicatively coupled to one or more portions of the inspection subsystem, wherein the controller provides one or more processors with one or more characteristics of one or more portions of the inspection region. One or more configured to execute program instructions configured to cause and to adjust one or more scanning parameters of the inspection subsystem in response to the one or more evaluated characteristics However, it is not limited to these.

  A method for adaptively scanning a sample during electron beam inspection is disclosed. In an exemplary embodiment, the method includes scanning an electron beam across the surface of the sample, evaluating one or more characteristics of one or more portions of the inspection region, and one or more portions of the inspection region. Performing in-line adjustments of one or more electron beam scanning parameters associated with scanning the electron beam across the surface of the sample based on one or more evaluated characteristics of, but not limited to .

  It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not necessarily restrictive of the invention as claimed. The accompanying drawings, which are incorporated in and constitute a part of this specification, together with the general description, illustrate embodiments of the invention and serve to explain the principles of the invention.

  Many of the advantages of the present disclosure can be better understood by those of ordinary skill in the art by reference to the accompanying drawings.

1 is an abstract schematic diagram of a system for adaptively scanning a sample during electron beam inspection, according to one embodiment of the present invention. FIG. 2 is a series of conceptual diagrams of an adaptive electron beam scanning scenario according to an embodiment of the present invention. FIG. 2 is a series of conceptual diagrams of an adaptive electron beam scanning scenario according to an embodiment of the present invention. FIG. 2 is a series of conceptual diagrams of an adaptive electron beam scanning scenario according to an embodiment of the present invention. FIG. 2 is a series of conceptual diagrams of an adaptive electron beam scanning scenario according to an embodiment of the present invention. FIG. 2 is a series of conceptual diagrams of an adaptive electron beam scanning scenario according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 4 is a series of conceptual diagrams of an adaptive electron beam scanning scenario with pixel stretching along a selected direction, according to an embodiment of the present invention. FIG. 3 is a process flow diagram illustrating a method for adaptively scanning a sample during an electron beam inspection, according to one embodiment of the present invention.

  The subject matter disclosed and illustrated in the accompanying drawings will be described in detail.

  Referring generally to FIGS. 1-6, a method and system for adaptively scanning a sample during electron beam inspection will be described in accordance with the present disclosure. Embodiments of the present disclosure are directed to adaptive scanning of a sample such as a semiconductor wafer during electron beam inspection. In some embodiments, one or more scanning parameters associated with a given scanning scenario can be adjusted in-line to improve one or more scanning functions. In other embodiments, in-line adjustment of scanning parameters can be performed in response to one or more evaluated characteristics of a region or sub-region of the sample to be inspected. These characteristics may include, but are not limited to, pattern density, pattern complexity, dominant orientation structure, defect size, defect density, defect depth, and defect type. In further embodiments, characterization may be performed during inspection recipe setup, during pre-inspection setup, or during inspection execution. In-line adjustment of one or more scanning parameters can improve inspection speed, improve inspection sensitivity, detect multiple types of defects in one inspection, reduce error rate, reduce pseudo-defect rate, electron to sample, etc. This can lead to a reduction in dose.

  FIG. 1 illustrates a system 100 for adaptively scanning a sample during electron beam inspection according to an embodiment of the present invention. In one embodiment, system 100 includes an inspection subsystem 101. In one embodiment, the inspection subsystem 101 is an electron beam based inspection subsystem 101 suitable for scanning the electron beam 104 over a selected region of the sample 106. In one embodiment, sample 106 includes, but is not limited to, a wafer (eg, a semiconductor wafer). In another embodiment, one or more portions of the inspection subsystem can be selectively controlled for the electron beam 104 to scan the sample 106 adaptively. In one embodiment, one or more portions, or components, of the inspection subsystem 101 can be selectively controlled independently or in conjunction with one or more other components, the area of the inspection sample 106 Based on one or more characteristics of (or sub-region), one or more scanning parameters of inspection subsystem 101 are varied inline. For example, the one or more adjustable scanning parameters of the inspection subsystem 101 include, but are not limited to, one or more electron source parameters (eg, beam current). As another example, the one or more adjustable scan parameters of the inspection subsystem 101 include, but are not limited to, one or more stage parameters (eg, stage scan speed or sample bias voltage). As another example, the one or more adjustable scan parameters of the inspection subsystem 101 may include, for example, one or more electro-optic focus parameters or one or more electron beam scan parameters (eg, scan pattern, scan line density, One or more electro-optic parameters such as, but not limited to, scan line spacing, electron beam scan speed, scan range or scan field of view. As another example, the one or more adjustable scanning parameters of the inspection subsystem 101 include one or more imaging parameters (eg, extraction voltage, extraction electron field strength of secondary electrons or electron incident energy), It is not limited to these. As another example, the one or more adjustable scan parameters of the inspection subsystem 101 include, but are not limited to, one or more digitization parameters (eg, digitization or pixel data rate).

  In another embodiment, one or more characteristics of the region (or sub-region) of the sample that is the basis for adjusting the scanning parameter includes the complexity of one or more patterns of the sample. Further, as described herein, for example, complexity markers (eg, changes in line scan density) may be implemented to rank the complexity of various patterns in the inspection area. In another embodiment, the one or more characteristics of the region (or sub-region) include one or more structural characteristics of one or more patterns of the sample. In another embodiment, the one or more characteristics of the region (or sub-region) include one or more defect features of the sample. For example, one or more characteristics of a region (or sub-region) may include, but are not limited to, defect density within one or more portions of the inspection region. As another example, one or more characteristics of a region (or sub-region) may include, but are not limited to, a defect size within one or more portions of the inspection region. As another example, one or more characteristics of a region (or sub-region) may include, but are not limited to, a defect type in one or more portions of the inspection region.

  This is described herein that the inspection subsystem 101 can operate in any scan mode known in the art. For example, the inspection subsystem 101 can operate in swath mode when scanning the electron beam 104 across the surface of the sample 106. In this regard, while the sample is moving, the inspection subsystem 101 can scan the electron beam 104 across the sample 106 in a scanning direction that is nominally orthogonal to the sample moving direction. As another example, when scanning the electron beam 104 across the surface of the sample 106, the inspection subsystem 101 can operate in step and scan modes. In this regard, the inspection subsystem 101 can scan the electron beam 104 over a sample 106 that is nominally stationary when the beam 104 is being scanned.

  In another embodiment, the system 100 includes a controller 102. In one embodiment, the controller 102 is communicatively coupled to one or more portions of the inspection subsystem 101. In one embodiment, the controller 102 is configured to evaluate one or more characteristics of one or more portions of the inspection area. In one embodiment, the controller 102 can evaluate one or more characteristics during inspection recipe setup, during pre-inspection setup, or during inspection execution. In another embodiment, the controller 102 is configured to adjust one or more scanning parameters of the inspection subsystem in response to one or more evaluated characteristics.

  In one embodiment, the controller 102 can evaluate or measure one or more characteristics of a region (or sub-region) of the sample 106. In one embodiment, the controller 102 can evaluate the complexity of one or more patterns of the sample 106, or a marker or indicator of complexity. In another embodiment, the controller 102 can evaluate one or more structural characteristics of one or more patterns of the sample 106. In another embodiment, the controller 102 can evaluate one or more defect characteristics of the sample 106. For example, the controller 102 can evaluate or measure the defect density in one or more portions of the inspection area. As another example, the controller 102 can evaluate or measure the size of defects in one or more portions of the inspection area. As another example, the controller 102 can evaluate or measure the type of defect in one or more portions of the inspection area.

  In one embodiment, the controller 102 can adjust one or more electron source parameters (eg, beam current). In another embodiment, the controller 102 can adjust one or more stage parameters (eg, stage scan speed or sample bias voltage). In another embodiment, the controller 102 may include electro-optic parameters such as one or more electro-optic focus parameters (eg, focus) or one or more electron beam scan parameters (eg, scan pattern, scan line density, scan line Spacing, electron beam scanning speed, scanning range or scanning field of view) can be adjusted. In another embodiment, the controller 102 can adjust one or more imaging parameters (eg, extraction voltage, extraction field strength of secondary electrons or electron incident energy). For example, the controller 102 may transmit an electron beam from one sub-region to another to enhance the defect signal in each sub-region or to make it easier to detect the defect that each sub-region is desired to detect. The incident energy can be changed. As another example, the controller 102 may move from one sub-region to another to enhance the defect signal in each sub-region, or to make it easier to detect the defect that each sub-region wants to detect. While controlling the imaging electrons, the extraction field or voltage can be varied. In another embodiment, the controller 102 can adjust one or more digitization parameters (eg, digitization or pixel data rate).

  In one embodiment, inspection subsystem 101 includes an electron beam source 120 that generates one or more electron beams 104. The electron beam source 120 can include any electron source known in the art. For example, the electron beam source 120 can include, but is not limited to, one or more electron guns. In one embodiment, controller 102 is communicatively coupled to electron source 120. In another embodiment, the controller 102 may adjust one or more electron source parameters for the electron source 120 via a control signal. In another embodiment, the controller 102 can adjust one or more one or more electron source parameters in response to one or more evaluated characteristics of the area of the test sample. For example, the controller 102 can change the beam current for the electron beam 104 emitted by the source 120 via a transmitted control signal to control the circuitry of the electron beam source 120.

  In another embodiment, the sample 106 is placed on a sample stage 108 suitable for securing the sample 106 during scanning. In another embodiment, the sample stage 108 is an operable stage. For example, the sample stage 108 includes one or more movement stages suitable for selectively moving the sample 106 along one or more linear directions (eg, x, y, and / or z directions). However, it is not limited to these. As another example, the sample stage 108 includes, but is not limited to, one or more rotation stages suitable for selectively rotating the sample 106 along the direction of rotation. As another example, the sample stage 108 may include suitable moving and rotating stages to selectively move the sample along a linear direction and / or rotate the sample 106 along a rotational direction. It is not limited.

  In one embodiment, controller 102 is communicatively coupled to sample stage 108. In another embodiment, the controller 102 can adjust one or more stage parameters via control signals sent to the sample stage 108. In another embodiment, the controller 102 can adjust one or more one or more stage parameters in response to one or more evaluated characteristics of the area of the test sample. For example, the controller 102 can change the sample scanning speed via the transmitted control signal and control the circuit of the sample stage 108. For example, the controller 102 can change the speed at which the sample 106 is moved linearly with respect to the electron beam 104 (eg, in the x or y direction).

  In another embodiment, inspection subsystem 101 includes a set of electro-optic elements 103. The set of electron optics can include any electron optical element known in the art that is suitable for focusing and / or directing the electron beam 104 onto a selected portion of the sample 106. In one embodiment, the set of electro-optic elements includes one or more electro-optic lenses. For example, the electro-optic lens includes, but is not limited to, one or more condenser lenses 112 that collect electrons from an electron beam source. As another example, the electro-optic lens includes, but is not limited to, one or more objective lenses 114 that focus the electron beam onto selected areas of the sample 106.

  In another embodiment, the set of electron optical elements includes one or more electron beam scanning elements. For example, the one or more electron beam scanning elements 111 include, but are not limited to, one or more scanning coils or deflectors suitable for controlling the position of the beam relative to the surface of the sample 106. In this regard, one or more scanning elements 111 can be utilized to scan the electron beam 104 across the sample 106 in a selected pattern.

  In one embodiment, controller 102 is communicatively coupled to a set of electro-optic elements 103. In another embodiment, the controller 102 can adjust one or more electro-optic parameters via control signals transmitted to one or more sets of electro-optic elements 103. In another embodiment, the controller 102 can adjust one or more electro-optic parameters in response to one or more evaluated characteristics of the area of the test sample.

  In one embodiment, the controller 102 is communicatively coupled to one or more electro-optic lenses 112, 114 of the electro-optic element set 103 to control one or more electro-optic focus parameters (eg, electro-optic focus). It is configured as follows. For example, the controller 102 can change the focus of the electron beam 104 via a control signal transmitted to the electro-optic lens 112 or 114. In another embodiment, the controller 102 is communicatively coupled to one or more electron beam scanning elements 111 of the set of electron optical elements 103 and configured to control one or more electron beam scanning parameters. . For example, the controller 102 can change the electron beam scanning speed, scanning range, scanning field of view, scanning line density, or scanning line spacing via one or more control signals transmitted to the electron beam scanning element 111.

  In another embodiment, the inspection subsystem includes a detector assembly 118. In another embodiment, the controller 102 can adjust one or more digitization parameters via control signals transmitted to one or more portions of the detector assembly 118. In another embodiment, the controller 102 can adjust one or more digitization parameters in response to one or more evaluated characteristics of the area of the test sample.

  In one embodiment, detector assembly 118 includes an electron collector 117 (eg, a secondary electron collector). In another embodiment, the detector assembly 118 includes a detector 119 (eg, a light emitting element and a PMT detector 119) for detecting electrons (eg, secondary electrons) from the sample surface. In another embodiment, the controller 102 is communicatively coupled to the electronic collector 117. In one embodiment, the controller 102 can adjust one or more imaging parameters via a control signal sent to the collector 117. In one embodiment, the controller 102 can adjust the extraction voltage or extraction field strength of the secondary electrons. For example, the controller 102 may increase the incident energy of the electron beam from one sub-region to another sub-region in order to enhance the defect signal in each sub-region or to make it easier to detect the defect that each sub-region wants to detect. Can be changed. In another embodiment, the controller 102 can adjust the electron incident energy on the sample 106. For example, the controller 102 may image imaging electrons from one sub-region to another to enhance the defect signal in each sub-region, or to make it easier to detect a defect that is desired to be detected in each sub-region. The extraction electric field or voltage can be changed while controlling. In another embodiment, the controller 102 can adjust the bias voltage of the sample.

  Although the foregoing description has focused on detector assembly 118 in connection with secondary electron collection, this should not be construed as limiting the invention. It is recognized herein that detector assembly 118 can include any device or combination of devices known in the art for characterizing a sample surface or bulk using electron beam 104. For example, the detector assembly 118 is known in the art configured to collect backscattered electrons, Auger electrons, transmitted electrons, or photons (eg, X-rays emitted by a surface in response to incident electrons). Any particle detector can be included.

  In another embodiment, controller 102 is communicatively coupled to detector 119 of detector assembly 118. In one embodiment, the controller 102 can adjust one or more digitization parameters via a control signal sent to the detector 119. For example, the controller 102 can adjust the digitization or pixel data rate of the detector 119 via a control signal sent to the detector 119.

  In another embodiment, the detector of detector assembly 118 includes a photodetector. For example, the anode of the PMT detector of detector 119 may be composed of a phosphor anode that is excited by the cascaded electrons of the PMT detector absorbed by the anode and subsequently emits light. In turn, the photodetector can collect the light emitted by the phosphor anode to image the sample 106. Photodetectors can include, but are not limited to, any photodetector known in the art, such as a CCD detector or a CCD-TDI detector.

  2A-2E illustrate a series of conceptual diagrams of an implementation of the system 100 and / or method 600 according to the present disclosure. 2A and 2B illustrate the change in scan line density as a function of the local pattern complexity of the sample 106, according to one or more embodiments of the present invention. In one embodiment, as indicated by 202 and 204, the system 100 can utilize a uniformly spaced scan pattern. As shown in FIG. 2A, if the areas between repeated sample patterns 200 are not of interest, the system 100 can skip these intermediate areas when performing a scan. A scanned image of this configuration is shown at 206. As shown in FIG. 2B, if regions between patterns 200 are of interest, but there are factors that allow more sparse sampling between patterns 200, system 100 will correct when scanning these regions. The scanned pattern 204 can be applied. For example, if the size of the defect in these areas is expected to be larger, a modified scan pattern as shown at 204 may be performed. A scanned image of this configuration is shown at 208.

  2C and 2D illustrate the change in scan line density as a function of the pattern complexity of the sample 106, according to one or more embodiments of the present invention. In one embodiment, as shown at 212 and 214, the system 100 can utilize a variable spacing scan pattern. As shown in FIG. 2C, if the areas between the repetitive sample patterns 210 are not of interest, the system 100 can skip these intermediate areas when performing a scan. A scanned image of this configuration is shown at 216. As shown in FIG. 2D, if regions between patterns 210 are of interest, but there are factors that allow more sparse sampling between patterns 210, system 100 will correct when scanning these regions. The scanned pattern 214 can be applied. For example, if the size of the defect in these regions is expected to be larger, a modified scan pattern as shown at 214 may be performed. A scanned image of this configuration is shown at 218.

  FIG. 2E illustrates changes in scan patterns and / or imaging parameters performed by the system 100 and / or method 600 according to one or more embodiments of the present invention. In one embodiment, the scanning pattern and / or imaging parameters that are changed by the system 100 may include, but are not limited to, electron incident energy onto the sample, extraction electric field for imaging electrons, and the like. In another embodiment, scan patterns and / or imaging parameters may be used to enhance the defect signal level, or otherwise to make it easier to detect one or more defects to be detected in each sub-region. Can be changed by the system 100. As a result, different types of defects that are region-specific to be detected can be collected with enhanced contrast during the same inspection. For example, 220 in FIG. 2E shows a repeating pattern 220, each of which can include two or more regions, each region having a different defect type. The scan pattern 222 can be utilized to scan such a repetitive pattern, and the imaging parameters can be selected as needed for the purpose of detecting more than one defect type in different areas of one inspection. Be changed. Image 224 shows the resulting image taken by system 100, which shows the region-specific contrast enhancement.

  3A-3B illustrate a series of conceptual diagrams of pixel stretching performed in the system 100 and / or method 600 according to the present disclosure. In one embodiment, the controller 102 can stretch one or more pixels along a selected direction.

  In one embodiment, as shown in images 300 and 302 of FIG. 3A, the controller 102 increases the beam scan range by a selected factor E (eg, E = 1-10), and the stage speed and pixel data. By maintaining the rate, one or more pixels can be stretched along the scanning direction of the electron beam. However, as shown in image 302, this stretch results in a rectangular pixel. In another embodiment, the controller 102 can stretch one or more pixels along the scanning direction of the electron beam by increasing the scanning voltage by a selection factor E.

  In the case of a particular sample layer shape, it is described herein that the above approach can significantly speed up inspection without significantly impairing inspection sensitivity. In this respect, an effective rectangular beam shape can be achieved. Further, as shown in image 302, if the beam scanning direction is along the line of one or more structures, the signal to noise ratio is improved as the beam shape matches the pixel shape. As shown in images 304 and 306, significant undersampling occurs when the beam scanning direction is vertical (or generally non-parallel).

  In another embodiment, as shown in images 310 and 312 of FIG. 3B, the controller 102 increases the stage speed by a selected factor E to maintain the beam scan range and pixel data rate, thereby maintaining the electron beam One or more pixels can be expanded along a direction orthogonal to the scanning direction. In this regard, the square pixels of the image 310 become rectangular pixels as shown at 312. As shown in images 314 and 316, when the beam scanning direction is along the line of one or more structures, there is significant undersampling.

  4A-4B illustrate a series of conceptual diagrams of pixel stretching utilizing the system 100 and / or method 600 according to the present disclosure. It is described herein that previous scanning methods do not effectively scan all areas of the sample, but there is a risk of missing a fatal defect. Furthermore, electron beam inspection with an adaptive scanning function in the slow scan direction is not particularly useful for voltage contrast (VC) defect inspection.

  In another embodiment, the controller 102 can stretch one or more pixels along the fast electron beam scan direction by increasing the scan voltage by a selection factor E. It is described herein that increasing the scan voltage by a factor E allows the system 100 to increase the deflection of electrons relative to the factor E relative to the vertical (not proportional to the voltage). In another embodiment, the number of pixels in the swath width can be reduced (eg, 256 pixel width) by making the coefficient E very large (eg, E> 10).

  It is described herein that such capabilities improve significant throughput. It will be appreciated that such an approach is particularly useful in detecting VC defects in straight conductive lines. For example, as shown in image 402 of FIG. 4A, a square non-expanded pixel 404 is shown. The expanded pixel 408 may be created by the controller 102 increasing the scan voltage by a selection factor E, as shown in the image 406 of FIG. In the example shown in FIG. 4B, the coefficient is responsive to E = 7. In one embodiment, the system 100 can perform a high speed scan along a conductive line with an elongation factor E, and the system 100 energizes the conductive line and causes electrical defects (eg, a break, a short between wires, and VC changes caused by non-open contact plugs that produce a conductive open circuit to ground can be captured. It is described herein that the above values for the expansion factor E are not limited and are to be construed as merely illustrative. For example, the expansion coefficient can be in the range of 1-10, and further in the range of 10-100.

  5A-5C illustrate a series of conceptual diagrams of pixel stretching utilizing the system 100 and / or method 600 according to the present disclosure. FIG. 5A shows a conceptual diagram of an SEM image 502 captured with a vertical square pixel scan. The image 504 in FIG. 5B shows a conceptual diagram of the expanded pixels with E = 7. FIG. 5C shows a conceptual diagram of an SEM image 502 taken with expanded pixels with E = 7.

  In one embodiment, the controller 102 is configured to execute one or more processors (FIG. 1) configured to execute program instructions suitable to cause one or more processors to perform one or more steps described in this disclosure. Not shown). In one embodiment, one or more processors of controller 102 include a carrier medium (e.g., comprising program instructions configured to cause one or more processors of controller 102 to perform the various steps described throughout this disclosure. , And non-transitory storage media (ie, memory media). It should be appreciated that the various steps described throughout this disclosure can be performed by a single computing system or, alternatively, multiple computing systems. The controller 102 can include, but is not limited to, a personal computer system, mainframe computer system, workstation, image computer, parallel processor, or any other device known in the art. In general, the term “computer system” can be broadly defined to include any device having one or more processors that execute instructions from a memory medium. Further, the different subsystems of system 100 may include computer systems or logic elements suitable for performing at least some of the steps described above. Accordingly, the above description is not intended to limit the invention and should be construed as merely illustrative.

  The controller 102 can be communicatively coupled to one or more portions of the inspection subsystem 101 via any transmission medium known in the art. For example, the controller 102 can be communicatively coupled to one or more portions of the inspection subsystem 101 via a wired transmission link or a wireless transmission link. In this way, the transmission medium can function as a data link between the controller 102 and other subsystems of the system 100.

  The embodiment of the system 100 shown in FIG. 1A may be further configured as described herein. Further, the system 100 may be configured to perform any other steps of any of the method embodiments described herein.

  FIG. 6 is a flow diagram illustrating the steps performed in a method for adaptively scanning a sample during electron beam inspection. It will be appreciated that the steps of process flow 600 may be performed by pre-programmed instructions that are executed by one or more processors of controller 102. However, it should be appreciated by those skilled in the art that the system 100 should not be construed as a limitation on the process 600 because various system configurations are intended to be able to execute the process flow 600.

  In the first step 602, an electron beam across the surface of the sample. For example, as shown in FIG. 1A, the electron beam 104 can be scanned according to a swath mode inspection procedure or step and scan mode inspection procedure. For example, one or more scanning elements 111 and / or stage 108 can be utilized to move the electron beam 104 along a selected pattern across the surface of the sample 106.

  In a second step 604, the characteristics of one or more portions of the inspection area (or sub-area) are evaluated. For example, the controller 102 evaluates (or determines or measures) one or more characteristics of one or more portions of the inspection area (or sub-area). For example, the controller 102 can analyze pattern data associated with the inspection region (or sub-region) acquired by the detector assembly 118. In another example, the controller 102 can analyze predicted pattern data based on one or more expected device characteristics (eg, repeating structures, etc.).

  In a third step 606, in-line adjustment of one or more scanning parameters associated with scanning the electron beam across the sample surface is performed based on one or more evaluation characteristics of one or more portions of the inspection region. For example, the controller 102 can make inline adjustments of one or more scanning parameters associated with scanning the electron beam across the sample surface based on one or more evaluation characteristics of one or more portions of the inspection region.

  All methods described herein can include storing results of one or more of the method embodiments in a storage medium. The results can include any of the results described herein and can be stored in any manner known in the art. The storage medium can include any storage medium described herein or any other suitable storage medium known in the art. After the results are stored, the results are accessed on a storage medium, used by any of the method or system embodiments described herein, formatted for display to a user, another software module, method, Or it can be used by a system or the like. Further, the results can be stored “permanently”, “semi-permanently”, temporarily, or for a period of time. For example, the storage medium may be random access memory (RAM), and the result does not necessarily persist indefinitely on the storage medium.

  Further, it is contemplated that each embodiment of the method described above may include any other step of any other method described herein. Also, each of the embodiments of the method described above can be performed by any of the systems described herein.

  Those skilled in the art will recognize that state-of-the-art technology has progressed to the point where there is little difference between hardware and software implementations of the system aspects. The use of hardware or software is usually a design choice that represents a cost-effective trade-off (in some, but not always, the choice of hardware or software can be important in certain situations). . A person skilled in the art has various means by which the processes and / or systems and / or other techniques (eg, hardware, software, and / or firmware) described herein can be achieved; and It will be appreciated that the preferred means will vary with the circumstances in which the process and / or system and / or other technology is utilized. For example, if the practitioner determines that speed and accuracy are paramount, the practitioner may primarily select hardware and / or firmware means. Alternatively, if flexibility is important, the practitioner may primarily choose to run the software, or once again the practitioner will choose some combination of hardware, software, and / or firmware There is. Thus, there are several possible means by which the processes and / or devices and / or other techniques described herein can be achieved, and any means utilized will depend on the circumstances in which the means are utilized and All of which are essentially more than others in that they are selected depending on the particular interests of the person (eg, speed, flexibility, or predictability), any of which may vary Not good. Those skilled in the art will recognize that the optical aspects of implementation typically use optically oriented hardware, software, and / or firmware.

  Those skilled in the art will describe the devices and / or processes as disclosed herein, and then practice engineering practices to integrate such described devices and / or processes into the data processing system. It will be appreciated that this is common in the art. That is, at least some of the devices and / or processes described herein can be integrated into a data processing system with a reasonable amount of experimentation. Those skilled in the art will recognize that typical data processing systems typically include system unit housings, video display devices, memories such as volatile and non-volatile memories, processors such as microprocessors and digital signal processors, computing entities such as operating systems, drivers A control system (e.g., feedback to sense position and / or velocity, including a graphical user interface, and one or more interaction devices such as application programs, touchpads or touch screens, and / or feedback loops and control motors) It will be understood to include one or more of the following: a control motor for moving and / or adjusting components and / or quantities. A typical data processing system may be implemented utilizing any suitable commercially available component, such as commonly found in data computing / communication and / or network computing systems / communication systems. .

  Many of the disclosure and attendant advantages will be appreciated from the foregoing description. It will be apparent that various modifications can be made in the shape, configuration and arrangement of components without departing from the disclosed subject matter or without sacrificing all of the advantages of the material. The form described is merely illustrative, and includes and includes such modifications as are intended by the following claims.

Claims (34)

A system for adaptively scanning a sample during electron beam inspection, the system comprising:
An inspection subsystem configured to scan an electron beam across the surface of the sample, the inspection subsystem comprising:
An electron beam source configured to generate an electron beam;
A sample stage configured to fix the sample;
A set of electron optical elements configured to direct the electron beam onto the sample;
A detector assembly including at least an electron collector, wherein the detector is configured to detect electrons from the surface of the sample;
The system further includes a controller communicatively coupled to one or more portions of the inspection subsystem, the controller coupled to the one or more processors in one or more portions of one or more portions of the inspection region. Causing a characteristic to be evaluated, and causing one or more scanning parameters of the inspection subsystem to be adjusted in response to the one or more evaluated characteristics.
A system comprising one or more processors configured to execute program instructions configured in such a manner.   The system of claim 1, wherein the sample comprises one or more wafers.   The system of claim 1, wherein the electron beam source includes one or more electron guns.   The system of claim 1, wherein the sample stage comprises at least one linear sample stage and a rotating sample stage. The one or more scanning parameters are:
At least one of one or more stage parameters, one or more electron optical parameters, one or more electron beam scanning parameters, one or more imaging parameters, and one or more digitization parameters. The system of claim 1, adjusted by the controller comprising one.   The system of claim 1, wherein the one or more characteristics of one or more portions of an inspection area comprise an indication of the complexity of one or more patterns within the one or more portions of the inspection area.   The system of claim 1, wherein the one or more characteristics of one or more portions of the inspection area comprise structural characteristics of one or more patterns within the one or more portions of the inspection area.   The system of claim 1, wherein the one or more characteristics of one or more portions of an inspection area comprise a defect density within the one or more portions of the inspection area.   The system of claim 1, wherein the one or more characteristics of one or more portions of an inspection area comprise a defect size within the one or more portions of the inspection area.   The system of claim 1, wherein the one or more characteristics of one or more portions of an inspection area comprise defect types within the one or more portions of the inspection area.   The system of claim 1, wherein the controller is configured to evaluate the one or more characteristics of one or more portions of an inspection area during inspection recipe setup.   The system of claim 1, wherein the controller is configured to evaluate the one or more characteristics of one or more portions of an inspection area during a setup inspection prior to inspection.   The system of claim 1, wherein the controller is configured to evaluate the one or more characteristics of one or more portions of the inspection region during inspection execution.   The system of claim 1, wherein the controller is communicatively coupled to the electron source and configured to control one or more electron source parameters.   The system of claim 1, wherein the controller is communicatively coupled to the sample stage and configured to control one or more stage parameters of the sample disposed on the sample stage.   The system of claim 1, wherein the controller is communicatively coupled to one or more electro-optic elements of the set of electro-optic elements and configured to control the one or more electro-optic elements.   The system of claim 1, wherein the set of electron optical elements includes one or more electron optical lenses that focus the electron beam onto the surface of the sample.   The system of claim 17, wherein the controller is communicatively coupled to the one or more electro-optic elements of the set of electro-optic elements and configured to control one or more electro-optic focus parameters.   The system of claim 1, wherein the set of electron optical elements comprises one or more electron beam scanning elements configured to scan the electron beam across the surface of the sample.   The system of claim 19, wherein the controller is communicatively coupled to the one or more electron beam scanning elements and configured to control one or more electron beam scanning parameters with the electron beam scanning coil. .   The system of claim 1, wherein the controller is communicatively coupled to a portion of the detector assembly.   The system of claim 21, wherein the controller is communicatively coupled to the electron collector of the detector assembly and configured to control one or more imaging parameters.   The system of claim 1, wherein the controller is communicatively coupled to the detector assembly and configured to control at least one digitizing parameter of the detector assembly.   The system of claim 1, wherein the detector assembly further comprises a light emitting element and a photomultiplier tube.   25. The system of claim 24, wherein the detector assembly further comprises a photodetector.   The system of claim 1, wherein the controller is configured to stretch one or more pixels along a selected direction.   The controller is configured to stretch one or more pixels along the electron beam scanning direction by increasing the beam scanning range by a selected factor and maintaining the stage speed and pixel data rate. 27. The system of claim 26.   27. The system of claim 26, wherein the controller is configured to stretch one or more pixels along an electron beam scanning direction by increasing a scanning voltage by a selection factor.   30. The system of claim 28, wherein the controller is configured to stretch one or more pixels along a fast scan direction by increasing a scan voltage by a selection factor.   The controller is configured to extend one or more pixels along the fast scan direction by increasing the scan voltage by a selection factor to detect one or more voltage contrast defects in the conductive lines of the sample. 30. The system of claim 29, wherein:   The controller stretches one or more pixels along the direction orthogonal to the scanning direction of the electron beam by increasing the stage speed by a selected factor and maintaining the beam scanning range and pixel data rate. 27. The system of claim 26, wherein the system is configured to: A method of adaptively scanning a sample during electron beam inspection, the method comprising:
Scanning an electron beam across the surface of the sample;
Evaluating one or more characteristics of one or more portions of the inspection area;
Performing in-line adjustment of one or more scanning parameters associated with the scanning of the electron beam across the surface of the sample based on the one or more evaluated characteristics of the one or more portions of the inspection region. And a step comprising:   35. The method of claim 32, wherein the step of scanning an electron beam across the surface of the sample comprises scanning the electron beam across the surface of the sample in a swath inspection mode.   35. The method of claim 32, wherein the step of scanning a beam over the surface of the sample comprises scanning an electron beam over the surface of the sample in a step and scan inspection mode.

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