JP2016518029A - 発光ダイオードコンポーネント - Google Patents
発光ダイオードコンポーネント Download PDFInfo
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- JP2016518029A JP2016518029A JP2016509406A JP2016509406A JP2016518029A JP 2016518029 A JP2016518029 A JP 2016518029A JP 2016509406 A JP2016509406 A JP 2016509406A JP 2016509406 A JP2016509406 A JP 2016509406A JP 2016518029 A JP2016518029 A JP 2016518029A
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- Prior art keywords
- layer
- light emitting
- emitting diode
- diode component
- light
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 27
- 239000002096 quantum dot Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000007850 fluorescent dye Substances 0.000 claims description 5
- 239000002223 garnet Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- 239000004811 fluoropolymer Substances 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- 230000008901 benefit Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- BEZBEMZKLAZARX-UHFFFAOYSA-N alumane;gadolinium Chemical compound [AlH3].[Gd] BEZBEMZKLAZARX-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000651 laser trapping Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (15)
- 光を発する半導体構造と、
光を発する前記半導体構造からの光をガイドするように構成された微小光学マルチレイヤ構造と、を含み、
前記微小光学マルチレイヤ構造は、複数のレイヤを含み、
i次レイヤの上にi+1次レイヤが順番に配置されており、
前記i次レイヤの屈折率、ni、は、前記i+1次レイヤの屈折率、ni+1、より大きく、
ここで、iの値は、正の整数のセットから選択されたものであり、かつ、
前記i+1次レイヤの厚みは、前記i次レイヤの厚みより大きい、
発光ダイオードコンポーネント。 - 前記微小光学マルチレイヤ構造の1次レイヤは、前記半導体構造の上部領域の屈折率と等しい屈折率を有している、
請求項1に記載の発光ダイオードコンポーネント。 - 前記発光ダイオードコンポーネントは、さらに、
波長変換レイヤ、を含む、
請求項1乃至3いずれか一項に記載の発光ダイオードコンポーネント。 - 前記微小光学マルチレイヤ構造は、前記波長変換レイヤの上に配置されている、
請求項4に記載の発光ダイオードコンポーネント。 - 前記微小光学マルチレイヤ構造は、前記波長変換レイヤの下に配置されている、
請求項4に記載の発光ダイオードコンポーネント。 - 前記発光ダイオードコンポーネントは、さらに、
追加的な微小光学マルチレイヤ構造、を含み、
前記波長変換レイヤは、前記微小光学マルチレイヤ構造と前記追加的な微小光学マルチレイヤ構造との間に配置されている、
請求項4に記載の発光ダイオードコンポーネント。 - 前記波長変換レイヤは、蛍光材料、量子ドット、及び/又は、蛍光色素、を含む、
請求項5乃至7いずれか一項に記載の発光ダイオードコンポーネント。 - 前記蛍光材料は、多結晶プレートを含み、
望ましくは、Ce(III)ドープされたガドリウムアルミニュームガーネット(Y、GdAG:Ce)を含む、
請求項8に記載の発光ダイオードコンポーネント。 - 前記発光ダイオードコンポーネントは、さらに、
サブストレートを含み、
望ましくは、サファイアサブストレートを含む、
請求項1乃至9いずれか一項に記載の発光ダイオードコンポーネント。 - 前記発光ダイオードコンポーネントは、さらに、
前記半導体構造の側面に隣接して配置されたサイドレイヤを含む、
請求項1乃至10いずれか一項に記載の発光ダイオードコンポーネント。 - 前記サイドレイヤ104は、波長変換材料を含み、
望ましくは、蛍光材料、量子ドット、及び/又は、蛍光色素、を含む、
請求項11に記載の発光ダイオードコンポーネント。 - 前記サイドレイヤは、光反射コーティング材料を含み、
望ましくは、高反射メタル、または、高拡散反射フルオロポリマ(fluoropolumer)を含む、
請求項11または12に記載の発光ダイオードコンポーネント。 - 請求項1乃至13いずれか一項に記載の発光ダイオードコンポーネントを含む発光ダイオード(LED)であり、
前記発光ダイオードコンポーネントは、サブマウント上に配置されている、
発光ダイオード。 - 光を発する半導体構造からの光をガイドするように構成された微小光学マルチレイヤ構造であって、
前記微小光学マルチレイヤ構造は、複数のレイヤを含み、
i次レイヤの上にi+1次レイヤが順番に配置されており、
前記i次レイヤの屈折率、ni、は、前記i+1次レイヤの屈折率、ni+1、より大きいか又は等しく、
ここで、iの値は、正の整数のセットから選択されたものであり、かつ、
前記i+1次レイヤの厚みは、前記i次レイヤの厚みより大きい、
微小光学マルチレイヤ構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13165312.3 | 2013-04-25 | ||
EP13165312 | 2013-04-25 | ||
PCT/EP2014/057939 WO2014173821A1 (en) | 2013-04-25 | 2014-04-17 | A light emitting diode component |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016518029A true JP2016518029A (ja) | 2016-06-20 |
JP6286026B2 JP6286026B2 (ja) | 2018-02-28 |
Family
ID=48182820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016509406A Active JP6286026B2 (ja) | 2013-04-25 | 2014-04-17 | 発光ダイオードコンポーネント |
Country Status (7)
Country | Link |
---|---|
US (2) | US9966511B2 (ja) |
EP (1) | EP2989665B1 (ja) |
JP (1) | JP6286026B2 (ja) |
KR (1) | KR102153649B1 (ja) |
CN (1) | CN105308763B (ja) |
TW (1) | TWI636584B (ja) |
WO (1) | WO2014173821A1 (ja) |
Families Citing this family (13)
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KR20150116986A (ko) * | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 퀀텀 도트 시트 및 이를 포함하는 라이트 유닛과 액정 표시 장치 |
EP3035368B1 (en) | 2014-12-17 | 2019-01-30 | LightLab Sweden AB | Field emission light source |
EP3308407B1 (en) * | 2015-06-09 | 2018-12-12 | Lumileds LLC | Led fabrication using high-refractive-index adhesives |
CN105679196A (zh) * | 2016-04-11 | 2016-06-15 | 深圳市丽格特光电有限公司 | 一种基于氮化镓led和量子点技术的全彩色高分辨率微显示芯片 |
WO2018087704A2 (en) * | 2016-11-11 | 2018-05-17 | QMAT, Inc. | Micro-light emitting diode (led) fabrication by layer transfer |
US10686158B2 (en) | 2017-03-31 | 2020-06-16 | Innolux Corporation | Display device |
US10073294B1 (en) * | 2017-03-31 | 2018-09-11 | Innolux Corporation | Display device |
EP3382754B1 (en) * | 2017-03-31 | 2021-06-30 | InnoLux Corporation | Display device |
CN107565008B (zh) * | 2017-08-16 | 2020-04-14 | 业成科技(成都)有限公司 | Led点状发光结构 |
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
TW202216759A (zh) | 2020-06-25 | 2022-05-01 | 美商默沙東藥廠 | 靶向絲胺酸413經磷酸化之tau之高親和力抗體 |
CN114335291B (zh) * | 2020-09-30 | 2024-02-02 | Tcl科技集团股份有限公司 | 一种发光元件及其制备方法、光源板 |
US20220165923A1 (en) * | 2020-11-24 | 2022-05-26 | Creeled, Inc. | Cover structure arrangements for light emitting diode packages |
Citations (3)
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JP2008227502A (ja) * | 2007-03-13 | 2008-09-25 | Cree Inc | 傾斜誘電体層 |
US20130069088A1 (en) * | 2011-09-20 | 2013-03-21 | The Regents Of The University Of California | Light emitting diode with conformal surface electrical contacts with glass encapsulation |
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TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
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-
2014
- 2014-04-17 KR KR1020157033477A patent/KR102153649B1/ko active IP Right Grant
- 2014-04-17 US US14/786,947 patent/US9966511B2/en active Active
- 2014-04-17 WO PCT/EP2014/057939 patent/WO2014173821A1/en active Application Filing
- 2014-04-17 CN CN201480036636.XA patent/CN105308763B/zh active Active
- 2014-04-17 EP EP14718587.0A patent/EP2989665B1/en active Active
- 2014-04-17 JP JP2016509406A patent/JP6286026B2/ja active Active
- 2014-04-25 TW TW103115060A patent/TWI636584B/zh active
-
2018
- 2018-05-07 US US15/972,480 patent/US10461230B2/en active Active
Patent Citations (3)
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JP2006525675A (ja) * | 2003-04-30 | 2006-11-09 | クリー インコーポレイテッド | 分布屈折率を有する反射防止層を備える発光素子およびその作製方法 |
JP2008227502A (ja) * | 2007-03-13 | 2008-09-25 | Cree Inc | 傾斜誘電体層 |
US20130069088A1 (en) * | 2011-09-20 | 2013-03-21 | The Regents Of The University Of California | Light emitting diode with conformal surface electrical contacts with glass encapsulation |
Also Published As
Publication number | Publication date |
---|---|
US9966511B2 (en) | 2018-05-08 |
EP2989665B1 (en) | 2020-09-23 |
JP6286026B2 (ja) | 2018-02-28 |
KR102153649B1 (ko) | 2020-09-09 |
KR20160003067A (ko) | 2016-01-08 |
US20160087171A1 (en) | 2016-03-24 |
CN105308763B (zh) | 2018-06-19 |
EP2989665A1 (en) | 2016-03-02 |
US20180254390A1 (en) | 2018-09-06 |
WO2014173821A1 (en) | 2014-10-30 |
TWI636584B (zh) | 2018-09-21 |
TW201503411A (zh) | 2015-01-16 |
US10461230B2 (en) | 2019-10-29 |
CN105308763A (zh) | 2016-02-03 |
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