JP2016223912A - Transistor substrate used in pressure sensor device and method for inspecting the transistor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transistor substrate that allows easy specification of a short-circuit generation part between terminals of a transistor circuit.SOLUTION: A plurality of transistor circuits of a transistor substrate include a first-row and second-column transistor circuit with a gate terminal connected to a first word line and a first terminal connected to a second bit line and a second-row and first-column transistor circuit with a gate terminal connected to a second word line and a first terminal connected to a first bit line. A second terminal of the first-row and second-column transistor circuit is connected to a second terminal of the second-row and first-column transistor circuit.SELECTED DRAWING: Figure 7

Description

  The present invention relates to a transistor substrate used in a pressure sensor device that measures pressure using a pressure sensitive body. The present invention also relates to an inspection method for inspecting whether a first terminal and a second terminal of a transistor circuit on a transistor substrate are short-circuited.

  In various fields such as a display device and a sensor device, a transistor substrate provided with a plurality of transistor circuits each including a transistor including a semiconductor layer is widely used. For example, the transistor circuit is used as a drive circuit for individually driving a plurality of light emitting elements of an organic EL display device or as a sensor circuit for detecting sensor signals at a plurality of positions of the pressure sensor device.

  For example, Patent Document 1 proposes that a transistor substrate used in a pressure sensor device is configured by arranging a plurality of transistor circuits each having an organic transistor using an organic semiconductor material in a matrix on a base material. ing. In this case, one of the source terminal and the drain terminal of each transistor circuit is electrically connected to a pressure sensitive body whose electric resistance and capacitance change according to the applied pressure. The other of the source terminal and the drain terminal of each transistor circuit is connected to a bit line for taking out a detection signal including information on the electric resistance and capacitance of the pressure sensitive body. According to the pressure sensor device configured as described above, the distribution of the pressure applied to the pressure sensor device is calculated by reading the change of the detection signal from each transistor circuit taken out via the bit line. be able to.

JP 2012-53050 A

  When calculating the pressure distribution using a plurality of transistor circuits arranged in a matrix, the more the number of transistor circuits arranged per unit area, that is, the higher the mounting density of the transistor circuits, the more the pressure is applied. It can be calculated in detail according to. On the other hand, as the packaging density of transistor circuits increases, the gap between the source terminal and the drain terminal in each transistor circuit decreases. As a result, a problem such as a short circuit between the source terminal and the drain terminal is likely to occur. There are various causes for the short-circuit between the source terminal and the drain terminal. For example, when the source terminal and the drain terminal are formed by a photolithography method, foreign matters such as dust are mixed between the portion to be the source terminal and the portion to be the drain terminal. As a result, the source terminal and the drain terminal It is conceivable that the terminal is not properly separated. Further, when the source terminal and the drain terminal are formed by the printing method, the dimensions of the electrode are deviated from the design value due to the printing tolerance, and as a result, the source terminal and the drain terminal are connected. Conceivable. If the source terminal and the drain terminal are short-circuited, the on state and off state of the transistor circuit cannot be controlled.

In a plurality of transistor circuits arranged in a matrix, generally, one bit line is electrically connected to the source terminals or drain terminals of two or more transistor circuits in order to reduce the number of bit lines. ing. In this case, by sequentially turning on the plurality of transistor circuits, detection signals can be sequentially extracted from the plurality of transistor circuits connected to one bit line. On the other hand, when one bit line is shared by a plurality of transistor circuits as described above, if one transistor circuit is defective, the other transistor circuits are also affected. For example, if the source terminal and the drain terminal are short-circuited in one transistor circuit, the potential of the bit line may stick to a certain potential such as the ground potential regardless of the state of the other transistor circuits. It is done. That is, the information about the electrical resistance and capacitance of the pressure sensitive body is obtained not only from the transistor circuit in which the short circuit occurs due to the short circuit between the source terminal and the drain terminal in one transistor circuit, but also from other transistor circuits. You will not be able to get. In addition, since the potentials of the source terminals or drain terminals of a plurality of transistor circuits connected to one bit line are affected, it is difficult to specify a transistor circuit in which a short circuit has occurred by inspection. Therefore, it is not easy to improve the manufacturing yield of the transistor substrate by removing or repairing only the transistor circuit in which the short circuit has occurred.

  The present invention has been made in consideration of such points, and an object of the present invention is to provide a transistor substrate capable of easily specifying the occurrence of a short circuit between terminals of a transistor circuit.

  The present invention is a transistor substrate used in a pressure sensor device that measures pressure using a pressure sensitive body, the gate terminal, a semiconductor layer, a first terminal connected to one end of the semiconductor layer, A plurality of transistor circuits having a transistor including a second terminal connected to the other end of the semiconductor layer; and a plurality of word lines and a plurality of bit lines connected to the plurality of transistor circuits. A word line connected to the gate terminals of the plurality of transistor circuits and a gate terminal of the plurality of transistor circuits different from the transistor circuits connected to the first word line. A plurality of bit lines, wherein the plurality of bit lines include a plurality of the second word lines. A first bit line connected to the terminal, and a second bit line connected to the first terminal of the plurality of transistor circuits different from the transistor circuit connected to the first bit line, The plurality of transistor circuits include a first row second column transistor circuit in which the gate terminal is connected to the first word line, the first terminal is connected to the second bit line, and the gate terminal is the first A second row first column transistor circuit connected to two word lines and having the first terminal connected to the first bit line, and the second terminal of the first row second column transistor circuit; , A transistor substrate connected to the second terminal of the second row, first column transistor circuit.

  In the transistor substrate according to the present invention, the transistor circuit includes a first electrode connected to the second terminal and a pressure sensing body of the pressure sensor device, and the second terminal of the first row second column transistor circuit and The second terminal of the second row first column transistor circuit may be connected to the same first electrode.

  In the transistor substrate according to the present invention, the transistor circuit may include a plurality of the transistors.

  The present invention provides a method for inspecting a transistor substrate as described above, wherein an on voltage is applied to the first word line in a state where an inspection voltage is applied between the first bit line and the second bit line. Measuring a current flowing between the first bit line and the second bit line, a first inspection step between the first column and the second column, and the first bit line and the second bit line. A first column to a second column are used to measure a current flowing between the first bit line and the second bit line by applying an ON voltage to the second word line with a test voltage applied therebetween. An inter-row second inspection step. In the first inspection process between the first column and the second column, an off voltage is applied to the word lines other than the first word line, and in the second inspection process between the first column and the second column, the second voltage is applied. An off voltage may be applied to word lines other than the word line.

  In the transistor substrate inspection method according to the present invention, the plurality of bit lines further include a third bit line and a fourth bit line connected to the first terminals of the plurality of transistor circuits, respectively. The circuit includes a first row fourth column transistor circuit having the gate terminal connected to the first word line, the first terminal connected to the fourth bit line, and the gate terminal connected to the second word line. And a second row and third column transistor circuit connected and having the first terminal connected to the third bit line. In this case, the inspection method applies an on-voltage to the first word line in a state where an inspection voltage is applied between the third bit line and the fourth bit line, A first inspection step between the third column to the fourth column for measuring a current flowing between the fourth bit line and a state in which an inspection voltage is applied between the third bit line and the fourth bit line And applying a turn-on voltage to the second word line to measure a current flowing between the third bit line and the fourth bit line, a second inspection step between the third column to the fourth column, May be further provided. In this case, in the first inspection step between the third column and the fourth column, an off voltage is applied to the word lines other than the first word line, and in the second inspection step between the third column and the fourth column, An off voltage may be applied to word lines other than the second word line.

  According to the transistor substrate of the present invention, it is possible to easily identify the occurrence location of a short circuit between the terminals of the transistor circuit.

FIG. 1 is a plan view showing a pressure sensor device according to an embodiment of the present invention. FIG. 2 is a plan view showing a transistor substrate of the pressure sensor device shown in FIG. FIG. 3 is a cross-sectional view showing a case where the pressure sensor device shown in FIG. 1 is cut in the III-III direction. 4 is an enlarged view showing a transistor circuit of the transistor substrate shown in FIG. FIG. 5 is a cross-sectional view showing a modification of the transistor circuit. FIG. 6 is a circuit diagram showing one transistor circuit and a pressure sensitive body. FIG. 7 is a circuit diagram showing a plurality of transistor circuits arranged in a matrix. FIG. 8 is a plan view showing an example of a layout of a plurality of transistor circuits arranged in a matrix. FIG. 9 is a circuit diagram showing a modification of a plurality of transistor circuits. FIG. 10 is a plan view showing a modification of the layout of a plurality of transistor circuits. FIG. 11 is a cross-sectional view illustrating a modified example of a transistor. FIG. 12 is a cross-sectional view illustrating a modified example of a transistor.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual ones. Further, in this specification, the terms “base material” and “film” are not distinguished from each other only based on the difference in names. For example, the “substrate” is a concept including a member that can be called a sheet or a film. Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “surface”, values of length and angle, etc. The interpretation should include the extent to which the functions of can be expected.

(Pressure sensor device)
First, the entire pressure sensor device 10 will be described with reference to FIG. The pressure sensor device 10 is configured to measure pressure using the pressure sensitive body 38. As shown in FIG. 1, the pressure sensor device 10 includes a transistor substrate 20 including a plurality of transistor circuits, and a pressure sensitive body 38 and a second electrode 39 provided on the transistor substrate 20. The inspection unit 50 can be connected to the transistor substrate 20 via the cable 45. The inspection unit 50 is a part configured to perform an inspection process for applying a voltage to the transistor circuit in order to inspect a short circuit between the terminals of the transistor circuit. In the inspection process described later, the inspection unit 50 includes not only the terminal portions P (W (1)) to P (W (8)) but also the terminal portions P (B (1)) to B (W (8)) is also connected via the cable 45. In actual operation of the pressure sensor device 10, although not shown, a control unit configured to perform a sensor process of applying a voltage to the transistor circuit of the transistor substrate 20 so as to obtain information on the electrical resistance of the pressure sensing body 38. Is connected to the transistor substrate 20 via a cable.

  Although the use of the pressure sensor device 10 is not particularly limited, for example, as one of the uses, it is conceivable to use the pressure sensor device 10 by being incorporated in an instrument that receives a load of a human body such as a bed.

(Transistor substrate)
Next, the transistor substrate 20 used in the pressure sensor device 10 will be described in detail with reference to FIGS. 1 and 2. FIG. 2 is a plan view showing the transistor substrate 20.

  As shown in FIG. 2, the transistor substrate 20 is arranged along a base material 21, a plurality of transistor circuits T formed on the base material 21, and an outer edge 22 of the base material 21, and is electrically connected to the transistor circuit T. And a plurality of terminal portions P connected to each other. As shown in FIG. 2, the base material 21 includes a pair of first sides 22a extending along the first direction D1, and a pair of second sides 22b extending along the second direction D2 orthogonal to the first direction D1. , Including a rectangular outer shape. The plurality of transistor circuits T are arranged in a matrix along the first direction D1 and the second direction D2.

  In FIG. 2, dotted lines denoted by reference characters W (1) to W (8) represent a plurality of word lines provided for transmitting a control signal for sequentially turning on each transistor circuit T. Yes. The plurality of word lines W (1) to W (8) are respectively connected to gate terminals 31 described later of the plurality of transistor circuits T arranged along the first direction D1. For example, the first word line W (1) is positioned on the lowermost side in the drawing of FIG. 1, and is connected to the gate terminals 31 of the plurality of transistor circuits T arranged along the first direction D1. The second word line W (2) arranged adjacent to the first word line W (1) has a plurality of transistor circuits different from the plurality of transistor circuits T connected to the first word line W (1). It is connected to the gate terminal 31 of T. In this specification, the term “connection” means not only a state in which terminals, electrodes or terminals and electrodes are in direct contact, but also terminals, electrodes, or terminals via a conductive member. This is a concept including a state where the electrode and the electrode are electrically connected.

  When a transistor Ta, which will be described later, included in the transistor circuit T is P-type, a voltage is applied to the first word line W (1) so that the voltage of the gate terminal 31 with respect to the first terminal 33 of the transistor Ta becomes negative. Thus, the plurality of transistor circuits T connected to the first word line W (1) can be simultaneously turned on. The same applies to the second word line W (2) and other word lines.

  In FIG. 1, dotted lines denoted by reference characters B (1) to B (8) transmit detection signals including information on the electrical resistance and capacitance of the pressure sensitive body 38 connected to each transistor circuit T. A plurality of bit lines provided in FIG. The plurality of bit lines B (1) to B (8) are electrically connected to first terminals 33 (to be described later) of the plurality of transistor circuits T arranged along the second direction D2. For example, the first bit line B (1) is positioned on the leftmost side in the drawing of FIG. 1, and is connected to the first terminals 33 of the plurality of transistor circuits T arranged along the second direction D2. The second bit line B (2) arranged adjacent to the first bit line B (1) has a plurality of transistor circuits different from the plurality of transistor circuits T connected to the first bit line B (1). The first terminal 33 of T is connected. The first bit line B (1) is turned on by a control signal from the word lines W (1) to W (8) among the plurality of transistor circuits T connected to the first bit line B (1). A detection signal extracted from one transistor circuit T is transmitted. The same applies to the second bit line B (2) and other bit lines.

  According to the transistor substrate 20 shown in FIG. 2, even when the number of word lines W (1) to W (8) and bit lines B (1) to B (8) is smaller than the number of transistor circuits 30, By arranging the word lines W (1) to W (8) and the bit lines B (1) to B (8) in a matrix, a detection signal from an arbitrary transistor circuit 30 can be taken out. For this reason, the number of lines provided on the substrate 21 can be reduced. Note that FIG. 2 shows an example in which the number of word lines and bit lines is eight, but the number of word lines and bit lines is not particularly limited.

  As shown in FIGS. 1 and 2, the word lines W (1) to W (8) and the bit lines B (1) to B (8) are respectively connected to the corresponding terminal portions P (W (1)) to P ( W (8)) and terminal portions P (B (1)) to P (B (8)). Although not shown, the pressure sensor device 10 may be configured by combining a plurality of transistor substrates 20. In this case, the terminal portion P connects the corresponding word lines W (1) to W (8) and the corresponding bit lines B (1) to B (8) to each other between one adjacent transistor substrate 20. May be used for In this case, as shown in FIGS. 1 and 2, the bit lines B (() corresponding to both of the terminal portions P (B (1)) to P (B (8)) provided on the pair of first sides 22a are provided. 1) to B (8) may be connected. Similarly, corresponding word lines W (1) to W (8) are connected to both terminal portions P (W (1)) to P (W (8)) provided on the pair of second sides 22b. It may be.

  As long as the transistor circuit 30 and the terminal portion P can be appropriately supported, the material constituting the base material 21 is not particularly limited. For example, the base material 21 may be a flexible substrate having flexibility or a rigid substrate having no flexibility.

(Transistor circuit)
Next, the transistor circuit T of the transistor substrate 20 will be described in detail with reference to FIGS. FIG. 3 is a cross-sectional view showing a case where the pressure sensor device 10 shown in FIG. 1 is cut in the III-III direction. 4 is an enlarged cross-sectional view showing one transistor circuit T of the transistor substrate 20 shown in FIG. 3, and the pressure sensitive body 38 and the second electrode 39 connected to the transistor circuit T.

  As shown in FIG. 4, the transistor circuit T includes a gate terminal 31 provided on the first surface 21 a of the base 21 and a gate provided on the first surface 21 a of the base 21 so as to cover the gate terminal 31. Insulating film 32, semiconductor layer 35 provided on gate insulating film 32, first terminal 33 provided on gate insulating film 32 so as to be connected to one end of semiconductor layer 35, and other end of semiconductor layer 35 And a second terminal 34 provided on the gate insulating film 32 so as to be connected to the transistor Ta. One of the first terminal 33 and the second terminal 34 functions as a so-called source terminal and the other functions as a so-called drain terminal according to the voltage between the first terminal 33 and the second terminal 34. The transistor circuit T further includes an insulating layer 36 provided so as to cover the first terminal 33, the second terminal 34, and the semiconductor layer 35 of the transistor Ta, and a first electrode 37 provided on the insulating layer 36. Have. The first electrode 37 is electrically connected to the first terminal 33 or the second terminal 34 through a through hole 36 a formed in a part of the insulating layer 36. In the example shown in FIG. 4, a through hole 36 a is formed on the second terminal 34, and the second terminal 34 and the first electrode 37 are connected via the through hole 36 a. The first electrode 37 may be filled in the entire area of the through hole 36a, or may be provided only on the wall surface of the through hole 36a.

  As described above, the corresponding word lines W (1) to W (8) are connected to the gate terminal 31, and the corresponding bit lines B (1) to B (8) are connected to the first terminal 33. Is done. As shown in FIG. 4, the gate terminal 31, the first terminal 33, and the second terminal 34 are provided on different levels. For this reason, the word lines W (1) to W (8) and the bit lines B (1) to B (8) are usually provided in different layers.

  As materials constituting the gate terminal 31, the gate insulating film 32, the first terminal 33, the second terminal 34, the insulating layer 36, and the first electrode 37, known materials used in transistors are used. For example, the material disclosed in JP2013-68562A can be used.

  As a material constituting the semiconductor layer 35, either an inorganic semiconductor material or an organic semiconductor material may be used, but an organic semiconductor material is preferably used. Organic semiconductor materials can generally be formed on a substrate at a lower temperature than inorganic semiconductor materials. For this reason, a flexible plastic substrate etc. can be utilized as a board | substrate. This makes it possible to provide a lightweight semiconductor element that is stable against mechanical shock. In addition, since an organic semiconductor material can be formed on a substrate using a coating process such as a printing method, a larger number of organic transistors can be efficiently formed on the substrate than when an inorganic semiconductor material is used. Is possible. For this reason, there is a possibility that the manufacturing cost of the semiconductor element can be lowered.

  As the organic semiconductor material, a low molecular organic semiconductor material such as pentacene or a high molecular organic semiconductor material such as polypyrrole can be used. More specifically, a low molecular organic semiconductor material or a high molecular organic semiconductor material disclosed in JP2013-21190A can be used. Here, the “low molecular organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of less than 10,000. The “polymeric organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of 10,000 or more.

  As shown in FIG. 4, the first electrode 37 of the transistor circuit T is in contact with the first surface 38 a of the pressure-sensitive body 38 on the side opposite to the side where the second terminal 34 is located. In addition, a second electrode 39 having conductivity is provided on the second surface 38b of the pressure sensitive body 38 located on the opposite side of the first surface 38a. A coating layer 40 that covers the second electrode 39 may be provided on the second electrode 39. As a material constituting the coating layer 40, a resin material such as polyethylene terephthalate can be used.

  The pressure sensitive body 38 is configured such that the electric resistance or capacitance of the pressure sensitive body 38 in the direction in which the pressure is applied changes in accordance with the pressure applied to the pressure sensitive body 38. As the pressure sensitive body 38, for example, a so-called pressure sensitive conductor configured to change the electric resistance of the pressure sensitive body in the direction in which the pressure is applied, here in the thickness direction, according to the pressure applied to the pressure sensitive body. Can be used. The pressure-sensitive conductor includes, for example, rubber such as silicone rubber and a plurality of particles having conductivity such as carbon added to the rubber.

  As shown in FIG. 3, the pressure sensitive body 38 and the second electrode 39 described above may be provided continuously across a plurality of transistor circuits T. In the example shown in FIG. 3, when the pressure F is applied by a pen or the like, the pressure sensitive body 38 is compressed in the thickness direction in the portion where the pressure F is applied. As a result, the particles in the pressure sensitive body 38 come into contact with each other in the thickness direction, and the electric resistance value of the pressure sensitive body 38 in the thickness direction becomes low. For this reason, in the transistor circuit T connected to the pressure sensitive body 38 in the portion to which the pressure F is applied, the current flowing through the first terminal 33 and the second terminal 34 increases. Therefore, the distribution of the pressure F applied to the pressure sensor device 10 can be calculated by detecting the value of the current flowing through each transistor circuit T.

  3 and 4 show examples in which the transistor circuit T is a so-called bottom gate type. However, the type of the transistor circuit T is not limited to the bottom gate type. For example, as shown in FIG. 5, the transistor circuit T is a so-called top gate type in which the gate terminal 31 is disposed at a position farther from the base material 21 than the first terminal 33, the second terminal 34, and the semiconductor layer 35. May be.

  FIG. 6 is a circuit diagram showing the transistor circuit T, the pressure sensitive body 38, and the second electrode 39. In the following description, as shown in FIG. 6, a transistor circuit in which the gate terminal 31 is electrically connected to the word line W (m) and the first terminal 33 is electrically connected to the bit line B (n). T is also expressed as m-th row and n-th column transistor circuit T (m, n). Here, m and n are arbitrary natural numbers. As will be described later, an even number of natural numbers m may be represented by 2i, and an odd number of natural numbers m may be represented by 2i-1. In addition, an even number of the natural numbers n may be represented by 2j, and an odd number of the natural numbers n may be represented by 2j-1. Here, i and j are arbitrary natural numbers.

  6 shows an example in which the second electrode 39 is connected to the ground potential. However, as long as the potential of the second electrode 39 is stable, a specific value of the potential of the second electrode 39 is shown. There is no particular limitation. For example, the second electrode 39 may be connected to the power supply potential.

  Next, a circuit diagram and layout of a plurality of transistor circuits T arranged in a matrix will be described with reference to FIGS. FIG. 7 shows a circuit diagram of a plurality of transistor circuits T. FIG. 8 is a plan view showing a layout of the transistor circuit T in a hierarchy in which the first terminal 33, the second terminal 34, and the semiconductor layer 35 are provided. In FIG. 8, the gate terminal 31 and the word lines W (1) to W (6) provided on a different layer from the first terminal 33 and the second terminal 34 are indicated by dotted lines. Similarly, the 1st electrode 37 provided in the hierarchy different from the 1st terminal 33 and the 2nd terminal 34 is shown with the dashed-dotted line. 7 and 8, in order to prevent the drawings from becoming complicated, word lines W (1) to W (6) and bit lines B (1) to B (B) out of a plurality of word lines and a plurality of bit lines are used. Only (6) is shown.

  In the present embodiment, the plurality of transistor circuits T have a second i-th row 2j− in which the gate terminal 31 is connected to the word line W (2i) and the first terminal 33 is connected to the bit line B (2j−1). A first column transistor circuit T (2i, 2j-1) and a second i-1 row in which the gate terminal 31 is connected to the word line W (2i-1) and the first terminal 33 is connected to the bit line B (2j). Second j-th column transistor circuit T (2i-1, 2j). Further, as shown in FIG. 7, the second terminal 34 of the 2i row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row 2j column transistor circuit T (2i-1, 2j). ) Of the second terminal 34 is connected via a connecting portion 42. For example, as shown in FIG. 7, the second terminal 34 of the first row second column transistor circuit T (1,2) and the second terminal 34 of the second row first column transistor circuit T (2,1) Are connected via a connecting portion 42. Further, the second terminal 34 of the first row and fourth column transistor circuit T (1,4) and the second terminal 34 of the second row and third column transistor circuit T (2,3) are connected via the connection portion 42. Connected. By adopting such a circuit configuration, as will be described later, it is possible to easily identify the location of occurrence of a short circuit between the first terminal 33 and the second terminal 34 of the transistor circuit T.

  The second terminal 34 of the 2i row 2j-1 column transistor circuit T (2i, 2j-1) is connected to the second terminal 34 of the 2i-1 row 2j column transistor circuit T (2i-1, 2j). As long as it can be done, the specific configuration of the connecting portion 42 is not particularly limited. The bit line is usually provided on the same level as the first terminal 33, the second terminal 34 and the semiconductor layer 35. For this reason, the bit line B (2j) between the 2i-th row and 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row and 2j-column transistor circuit T (2i-1, 2j). ) Is not provided, the connection portion 42 cannot be provided on the same level as the first terminal 33, the second terminal 34, and the semiconductor layer 35. In this case, as will be described below, a member arranged on a layer different from the first terminal 33, the second terminal 34, and the semiconductor layer 35, for example, the first electrode 37 can be used as the connection portion 42.

  In the example shown in FIG. 8, the second terminal 34 of the 2i row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row 2j column transistor circuit T (2i-1, 2j). The second terminal 34 is connected to the same first electrode 37 through a through hole 36 a formed in the insulating layer 36. For example, the second terminal 34 of the second row first column transistor circuit T (2, 1) and the second terminal 34 of the first row second column transistor circuit T (1, 2) are second in plan view. Connected to the same first electrode 37 configured to straddle the row first column transistor circuit T (2, 1) and the first row second column transistor circuit T (1, 2) through the through hole 36a. Yes. Similarly, the second terminal 34 of the second row and third column transistor circuit T (2, 3) and the second terminal 34 of the first row and fourth column transistor circuit T (1, 4) are The same first electrode 37 configured to straddle the 2nd row 3rd column transistor circuit T (2, 3) and the 1st row 4th column transistor circuit T (1, 4) is connected through the through hole 36a. ing. As a result, the second terminal 34 of the 2i-th row and 2j-1 column transistor circuit T (2i, 2j-1) and the second terminal of the 2i-1 row, 2j-column transistor circuit T (2i-1, 2j). 34 can be electrically connected.

  Although not shown, the second terminal 34 of the 2i row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row 2j column transistor circuit T (2i-1, 2j) The second terminal 34 may be connected to the second terminal 34 via a connection portion 42 arranged on the same level as the gate terminal 31. Although not shown, the bit line B is provided between the 2i-th row and 2j-1th column transistor circuit T (2i, 2j-1) and the 2i-1th row and 2j-th column transistor circuit T (2i-1, 2j). When the transistor circuit T is arranged so that (2j) is not located, the connection part 42 may be arranged on the same level as the first terminal 33, the second terminal 34, and the semiconductor layer 35.

  Preferably, as shown in FIG. 8, at least one transistor Ta of the 2i row and 2j−1 column transistor circuit T (2i, 2j−1) and the 2i−1 row and 2j column transistor circuit T ( The transistor circuit T is arranged so that the word line (2i) and the bit line B (2j) are located between at least one transistor Ta of 2i-1 and 2j). Thus, by arranging at least one transistor Ta between two adjacent word lines and between two adjacent bit lines, the distance between two adjacent word lines and between two adjacent bit lines can be An appropriate distance can be secured. As a result, it is possible to suppress a problem such as a short circuit between two adjacent word lines or between two adjacent bit lines. Moreover, it can suppress that the packaging density of the transistor Ta of the transistor circuit T becomes high, and it can suppress that malfunctions, such as a short circuit, arise between two adjacent transistors Ta by this.

(Inspection method)
Next, a method for inspecting a short circuit between the first terminal 33 and the second terminal 34 in the transistor circuit T of the transistor substrate 20 having such a configuration will be described.

  First, the inspection unit 50 transmits the first bit line B (1) and the second bit line B (2) via the cable 45 connected to the terminal portions P (B (1)) to B (W (6)). The inspection voltage V is applied between the two. For example, the potential of the first bit line B (1) is set as the inspection potential E, and the potential of the second bit line B (2) is set as the ground potential. Note that the specific values of the inspection voltage V and the inspection potential E are not particularly limited as long as a current can be appropriately supplied to the transistor circuit T in the on state.

[Inspection process between bit lines B (1) and B (2)]
Next, in a state where the inspection voltage V is applied between the first bit line B (1) and the second bit line B (2), an on-voltage is applied to the first word line W (1), A first inspection process between the first column and the second column is performed to measure a current flowing between the 1 bit line B (1) and the second bit line B (2). The on-voltage is appropriately set so that the first row, second column transistor circuit T (1,2) can be turned on. At this time, the potentials of the other word lines W (2) to W (6) are controlled so that the transistor circuits T connected to the word lines W (2) to W (6) are not turned on. . Note that the method for controlling the potentials of the other word lines W (2) to W (6) is not particularly limited. For example, when the transistor circuit T and the peripheral circuit are designed so that no significant current flows in the transistor circuit T unless the ON voltage is applied to the gate terminal 31, the other word lines W (2) to W (6) May be in a floating state, that is, in a state where no voltage is applied. Further, when a significant current flows through the transistor circuit T connected to each of the word lines W (2) to W (6) when the other word lines W (2) to W (6) are in a floating state, An off voltage may be applied to the word lines W (2) to W (6). When an organic semiconductor material is used as the material constituting the semiconductor layer 35, the transistor circuit T connected to each of the word lines W (2) to W (6) is connected to the transistor circuits T connected to the word lines W (2) to W (6) in the float state. There is a possibility that a current of about 1/100 flows. Therefore, when an organic semiconductor material is used, it is preferable to apply an off voltage to the other word lines W (2) to W (6).

  Thereafter, in the state where the inspection voltage V is applied between the first bit line B (1) and the second bit line B (2), an ON voltage is applied to the second word line W (2), A second inspection process between the first column and the second column is performed to measure a current flowing between the bit line B (1) and the second bit line B (2). At this time, the potentials of the other word lines W (1) and W (3) to W (6) are determined by the transistor circuits T connected to the word lines W (1) and W (3) to W (6). It is controlled so as not to turn on.

  In addition, in the state where the inspection voltage V is applied between the first bit line B (1) and the second bit line B (2), the ON voltage is sequentially applied to the word lines W (3) to W (6). Thus, the current flowing between the first bit line B (1) and the second bit line B (2) is measured. That is, the third inspection step between the first column and the second column, the fourth inspection step between the first column and the second column, the fifth inspection step between the first column and the second column, and the first inspection between the first column and the second column. 6 inspection steps are performed in order.

As described above, the ON voltage is sequentially applied to the word lines W (1) to W (6) in a state where the inspection voltage V is applied between the first bit line B (1) and the second bit line B (2). The current that flows between the first bit line B (1) and the second bit line B (2) when the voltage is applied will be described. In the example shown in FIGS. 7 and 8, the following first path to third path exist between the first bit line B (1) and the second bit line B (2).
First path: a path passing through the second row and first column transistor circuit T (2,1), the connection section 42 and the first row and second column transistor circuit T (1,2). Path through the first column transistor circuit T (4, 1), the connection section 42 and the third row second column transistor circuit T (3, 2) / third path: sixth row first column transistor circuit T (6, 1) ), A path passing through the connection section 42 and the fifth row, second column transistor circuit T (5, 2). In order for a current to flow between the first bit line B (1) and the second bit line B (2), At least one of the first to third paths described above needs to be in a low resistance state.

  First, in any of the plurality of transistor circuits T connected to the first bit line B (1) and the second bit line B (2), a short circuit occurs between the first terminal 33 and the second terminal 34. Assume that it is not. In this case, even if an ON voltage is applied to the first word line W (1), the first row second column transistor circuit T (1,2) is turned on, but the second row first column transistor circuit T (2,1) does not turn on. For this reason, the first path has a high resistance value. The other transistor circuits T are also in the off state. For this reason, the second path and the third path also have high resistance values. Accordingly, no current flows between the first bit line B (1) and the second bit line B (2). Similarly, even if an ON voltage is applied to the second word line W (2), the second row first column transistor circuit T (2, 1) is turned on, but the first row second column transistor circuit T (1,2) is not turned on. For this reason, the first path has a high resistance value. The other transistor circuits T are also in the off state. For this reason, the second path and the third path also have high resistance values. Accordingly, no current flows between the first bit line B (1) and the second bit line B (2). Similarly, no current flows between the first bit line B (1) and the second bit line B (2) when the ON voltage is sequentially applied to the word lines W (3) to W (6).

  Next, it is assumed that a short circuit occurs between the first terminal 33 and the second terminal 34 in the first row, second column transistor circuit T (1,2). Therefore, the first row second column transistor circuit T (1,2) is always in the on state regardless of the voltage applied to the first bit line B (1). Even in this case, when the on-voltage is applied to the first word line W (1), the second row first column transistor circuit T (2, 1) is not turned on. For this reason, the resistance value of the first path is high, and no current flows between the first bit line B (1) and the second bit line B (2). On the other hand, when an ON voltage is applied to the second word line W (2), the second row first column transistor circuit T (2, 1) is turned on. The first row and second column transistor circuit T (1,2) is always in the on state. Therefore, the first path has a low resistance, and therefore, a current flowing between the first bit line B (1) and the second bit line B (2) is measured. Therefore, it is possible to detect that a short circuit has occurred between the first terminal 33 and the second terminal 34 in the first row second column transistor circuit T (1,2) based on the measurement result. Even when a short circuit occurs in the first row and second column transistor circuit T (1,2), the first voltage is applied to the word lines W (3) to W (6) in order. No current flows between the 1 bit line B (1) and the second bit line B (2).

[Inspection process between bit lines B (3) to B (4)]
Next, the inspection process between the bit lines B (3) to B (4) is performed in the same manner as the inspection process between the bit lines B (1) to B (2). Specifically, first, an on-voltage is applied to the first word line W (1) while the inspection voltage V is applied between the third bit line B (3) and the fourth bit line B (4). Then, the first inspection process between the third column to the fourth column is performed to measure the current flowing between the third bit line B (3) and the fourth bit line B (4). Next, in the state where the inspection voltage V is applied between the third bit line B (3) and the fourth bit line B (4), the ON voltage is applied to the second word line W (2), A second inspection step between the third column to the fourth column is performed to measure a current flowing between the 3 bit line B (3) and the fourth bit line B (4). In addition, in the state where the inspection voltage V is applied between the third bit line B (3) and the fourth bit line B (4), the ON voltage is sequentially applied to the word lines W (3) to W (6). The current flowing between the third bit line B (3) and the fourth bit line B (4) is measured. That is, the third inspection step between the third column and the fourth column, the fourth inspection step between the third column and the fourth column, the fifth inspection step between the third column and the fourth column, and the third inspection step between the third column and the fourth column. 6 inspection steps are performed in order. This causes a short circuit in the transistor circuits T (1,4), T (2,3), T (3,4), T (4,3), T (5,4), T (6,3). Can be inspected. Moreover, when the short circuit has arisen, the transistor circuit T in which the short circuit has arisen can be specified.

[Inspection process between bit lines B (5) to B (6)]
Thereafter, the inspection process between the bit lines B (5) to B (6) is performed in the same manner as the inspection process between the bit lines B (1) and B (2). That is, the first inspection step between the fifth column and the sixth column, the second inspection step between the fifth column and the sixth column, the third inspection step between the fifth column and the sixth column, and the fifth inspection between the fifth column and the sixth column. 4 inspection processes, the 5th inspection process between the 5th line-the 6th line, and the 6th inspection process between the 5th line-the 6th line are performed in order. This causes a short circuit in the transistor circuits T (1,6), T (2,5), T (3,6), T (4,5), T (5,6), T (6,5). Can be inspected. Moreover, when the short circuit has arisen, the transistor circuit T in which the short circuit has arisen can be specified.

  Thus, in the present embodiment, the word lines W (1) to W (m) are applied to the word lines W (1) to W (m) in a state where the inspection voltage V is applied between the bit line B (2j-1) and the bit line B (2j). It is possible to inspect whether or not a short circuit has occurred in the transistor circuit T by sequentially applying an ON voltage and measuring a current flowing between the bit line B (2j-1) and the bit line B (2j). it can. Moreover, when the short circuit has arisen, the transistor circuit T in which the short circuit has arisen can be specified. That is, it is possible to easily identify the occurrence location of the short circuit. For this reason, it is possible to improve the manufacturing yield of the transistor substrate 20 by removing or repairing only the transistor circuit T in which the short circuit has occurred. In addition, the manufacturing yield of the transistor substrate 20 can be improved by improving the manufacturing process of the transistor substrate 20 based on the data regarding the occurrence location of the short circuit.

(Assembly process of pressure sensor device)
Next, an example of a method for configuring the pressure sensor device 10 using the inspected transistor substrate 20 will be described.

  Here, the pressure-sensitive body 38, the second electrode 39, the coating layer 40, and the like described above are stacked on the transistor substrate 20. In addition, a control unit configured to perform a sensor process of applying a voltage to the transistor circuit of the transistor substrate 20 so as to obtain information regarding the electrical resistance of the pressure sensitive body 38 is connected to the transistor substrate 20 via the cable 45. . At this time, the transistor substrate 20 and the pressure sensor device 10 may be configured such that the word line W (2i-1) and the word line W (2i) are electrically connected. For example, the first word line W (1) and the second word line W (2) may be connected. Similarly, the transistor substrate 20 and the pressure sensor device 10 may be configured so that the bit line B (2j-1) and the bit line B (2j) are electrically connected. For example, the first bit line B (1) and the second bit line B (2) may be connected. In this case, both the 2i row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row 2j column transistor circuit T (2i-1, 2j) have the same word line and bit. Will be connected to the line. For example, the first row / second column transistor circuit T (1,2) and the second row / first column transistor circuit T (2,1) have the same first word line W (1) and first bit line B ( 1). Here, as described above, the second terminal 34 of the 2i-th row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1th row 2j-column transistor circuit T (2i-1, 2j) The second terminal 34 is connected to the same first electrode 37. For this reason, the 2i row 2j-1 column transistor circuit T (2i, 2j-1) and the 2i-1 row 2j column transistor circuit T (2i-1, 2j) correspond to the same first electrode 37. It functions as a transistor circuit T connected in parallel to the portion of the pressure-sensitive body 38. That is, a plurality of transistor circuits T are provided in parallel with respect to the pressure sensitive body 38 corresponding to one first electrode 37. For this reason, the capacity | capacitance of the electric current which flows into the pressure sensitive body 38 corresponding to one 1st electrode 37 can be increased. Even if one of the plurality of transistor circuits T fails, if the other transistor circuits T are normal, the current flowing through the corresponding pressure sensitive body 38 can be measured. For this reason, the reliability of the pressure sensor apparatus 10 can be improved.

  As a method of electrically connecting the word line W (2i-1) and the word line W (2i), for example, a line connected to the word line W (2i-1) and the word line W ( The method of short-circuiting with the line connected to 2i) is mentioned. Further, a member for connecting the word line W (2i-1) and the word line W (2i) may be provided on the transistor substrate 20. A similar method can be adopted for the method of electrically connecting the bit line B (2j-1) and the bit line B (2j).

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(First modification)
7 and 8 described above, the example in which the transistor circuit T includes only one transistor Ta is shown. However, the present invention is not limited to this, and the transistor circuit T may include a plurality of transistors Ta as shown in FIGS. 9 and 10. For example, in the 2i row 2j-1 column transistor circuit T (2i, 2j-1), the gate terminal 31 is connected to the word line W (2i), and the first terminal 33 is connected to the bit line B (2j-1). The second terminal 34 may include a plurality of transistors Ta that are connected to each other via the connection portion 44. In FIG. 9 and FIG. 10, in the second row first column transistor circuit T (2, 1), the gate terminal 31 is connected to the second word line W (2), and the first terminal 33 is the first bit line B. An example including two transistors Ta connected to (1) and having a second terminal 34 connected to each other via a connecting portion 44 is shown. As shown in FIGS. 9 and 10, the two transistors Ta may be arranged so as to face each other across the second word line W (2). The connection unit 44 may be arranged on the same level as the second terminal 34, or may be arranged on a level different from the second terminal 34. For example, as in the case of the connection part 42 described above, the first electrode 37 connected to the second terminal 34 via the through hole 36 a may function as the connection part 44.

  According to this modification, the transistor circuit T includes the plurality of transistors Ta, so that the capacity of the current flowing through the transistor circuit T can be increased. Further, even when one of the plurality of transistors Ta fails, the current flowing through the transistor circuit T can be continuously measured as long as the other transistors Ta are normal. For this reason, the reliability of the pressure sensor apparatus 10 can be improved.

(Other variations)
In the above-described embodiment, the example in which the inspection unit 50 that inspects the transistor substrate 20 is connected to the transistor substrate 20 via the cable 45 has been described. However, the place where the inspection unit 50 is provided is not particularly limited. For example, the inspection unit 50 may be provided on the transistor substrate 20. Similarly, the control unit may be provided on the transistor substrate 20.

  In the above-described embodiment, the example in which the first electrode 37 is in contact with the pressure sensitive body 38 has been described. However, the present invention is not limited to this, and as shown in FIG. 11, the first electrode 37 and the pressure sensitive body 38 have an opening such as a through hole 36 a formed in a part of the insulating layer 36. You may face each other. In this case, in a state where no pressure is applied to the transistor circuit T, it is guaranteed that the first electrode 37 and the pressure sensitive body 38 are not in contact with each other. For this reason, in a state where no pressure is applied to the transistor circuit T, it is possible to suppress the deviation of the electrical state of the pressure-sensitive body 38 and the generation of noise. In this case, a part of the pressure sensitive body 38 pushed into the through hole 36 a comes into contact with the first electrode 37 only after a pressure of a certain value or more is applied to the pressure sensitive body 38 in the thickness direction of the pressure sensitive body 38. It becomes like this. That is, the second terminal 34 is electrically connected to the pressure sensitive body 38 when pressure is applied to the pressure sensitive body 38. For this reason, the pressure of the pressure sensitive body 38 pressed against the first electrode 37 can be reduced as compared with the conventional case. Accordingly, even when a large pressure is applied to the pressure sensitive body 38, it is possible to suppress an excessive current from flowing to the first electrode 37 and the pressure sensitive body 38. In this respect as well, it is possible to suppress the deviation of the electrical state of the pressure sensitive body 38. In addition, it is possible to suppress an increase in power consumption of the transistor circuit T and power consumption of an external drive circuit for driving the transistor circuit T. In addition, it is possible to suppress an excessive load from being applied to an external drive circuit for driving the transistor circuit T.

  FIG. 11 shows an example in which the first electrode 37 connected to the second terminal 34 faces the pressure-sensitive body 38 with the opening interposed therebetween. However, although not shown, the second terminal 34 may face the pressure sensitive body 38 with the opening portion interposed therebetween.

  In FIG. 11, in the bottom gate type transistor circuit T, the first electrode 37 and the pressure sensitive body 38 face each other with an opening such as a through hole 36 a formed in a part of the insulating layer 36 therebetween. An example configured as shown is shown. However, the present invention is not limited to this, and as shown in FIG. 12, the first electrode 37 and the pressure sensitive body 38 have an opening such as a through hole 36a formed in a part of the insulating layer 36 therebetween. The gate terminal 31 may be disposed at a position farther from the base material 21 than the first terminal 33, the second terminal 34, and the semiconductor layer 35. That is, the opposing structure of the first electrode 37 and the pressure sensitive body 38 shown in FIG. 11 may be applied to the top gate type transistor circuit T.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

DESCRIPTION OF SYMBOLS 10 Pressure sensor apparatus 20 Transistor board P Terminal part T Transistor circuit Ta Transistor 31 Gate terminal 32 Gate insulating film 33 1st terminal 34 2nd terminal 35 Semiconductor layer 36 Insulating layer 37 1st electrode 38 Pressure sensitive body 39 2nd electrode 42 Connection Section 44 Connection section 45 Cable 50 Inspection section W (1) First word line W (2) Second word line B (1) First bit line B (2) Second bit line T (2, 1) Second row First column transistor circuit T (1,2) first row second column transistor circuit

Claims (7)

A transistor substrate used in a pressure sensor device that measures pressure using a pressure sensitive body,
A plurality of transistor circuits having a transistor including a gate terminal, a semiconductor layer, a first terminal connected to one end of the semiconductor layer, and a second terminal connected to the other end of the semiconductor layer;
A plurality of word lines and a plurality of bit lines connected to a plurality of the transistor circuits,
The plurality of word lines include a first word line connected to the gate terminals of the plurality of transistor circuits, and the gate terminals of the plurality of transistor circuits different from the transistor circuits connected to the first word line. At least a second word line connected to
The plurality of bit lines include a first bit line connected to the first terminals of the plurality of transistor circuits and a first bit line of the plurality of transistor circuits different from the transistor circuit connected to the first bit line. At least a second bit line connected to one terminal,
The plurality of transistor circuits include a first row second column transistor circuit in which the gate terminal is connected to the first word line, the first terminal is connected to the second bit line, and the gate terminal is the first A second row first column transistor circuit connected to two word lines and having the first terminal connected to the first bit line;
A transistor substrate in which the second terminal of the first row and second column transistor circuit is connected to the second terminal of the second row and first column transistor circuit. The transistor circuit includes a first electrode connected to the second terminal and a pressure sensitive body of the pressure sensor device,
2. The second terminal of the first row and second column transistor circuit and the second terminal of the second row and first column transistor circuit are connected to the same first electrode. Transistor substrate.   The transistor substrate according to claim 1, wherein the transistor circuit includes a plurality of the transistors. A method for inspecting a transistor substrate according to claim 1,
In a state where a test voltage is applied between the first bit line and the second bit line, an on voltage is applied to the first word line so that the first bit line is connected to the second bit line. A first inspection step between the first row and the second row, measuring the current flowing through
In a state where a test voltage is applied between the first bit line and the second bit line, an on voltage is applied to the second word line so that the voltage is between the first bit line and the second bit line. And a second inspection step between the first column and the second column for measuring a current flowing through the first and second columns. In the first inspection process between the first column and the second column, an off voltage is applied to word lines other than the first word line,
5. The inspection method according to claim 4, wherein an off voltage is applied to word lines other than the second word line in the second inspection step between the first column and the second column. The plurality of bit lines further include a third bit line and a fourth bit line each connected to the first terminals of the plurality of transistor circuits,
The plurality of transistor circuits include a first row fourth column transistor circuit in which the gate terminal is connected to the first word line, the first terminal is connected to the fourth bit line, and the gate terminal is the first A second row and third column transistor circuit connected to two word lines and having the first terminal connected to the third bit line;
The inspection method is:
With an inspection voltage applied between the third bit line and the fourth bit line, an on-voltage is applied to the first word line, and between the third bit line and the fourth bit line. A first inspection step between the third column to the fourth column, measuring the current flowing through
With an inspection voltage applied between the third bit line and the fourth bit line, an on-voltage is applied to the second word line so that the third bit line is connected between the third bit line and the fourth bit line. 6. The inspection method according to claim 4, further comprising: a second inspection step between the third column and the fourth column that measures a current flowing through the second column. In the first inspection step between the third column to the fourth column, an off voltage is applied to word lines other than the first word line,
The inspection method according to claim 6, wherein in the second inspection step between the third column and the fourth column, an off voltage is applied to word lines other than the second word line.

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