JP2016210742A - 異種複核錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 - Google Patents
異種複核錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 Download PDFInfo
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- JP2016210742A JP2016210742A JP2015096980A JP2015096980A JP2016210742A JP 2016210742 A JP2016210742 A JP 2016210742A JP 2015096980 A JP2015096980 A JP 2015096980A JP 2015096980 A JP2015096980 A JP 2015096980A JP 2016210742 A JP2016210742 A JP 2016210742A
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- 229910020678 Co—Mn Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- QFEOTYVTTQCYAZ-UHFFFAOYSA-N dimanganese decacarbonyl Chemical compound [Mn].[Mn].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] QFEOTYVTTQCYAZ-UHFFFAOYSA-N 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- QYLRHYORWRGQOM-UHFFFAOYSA-N [Mn].C(C)(C)N=CC=NC(C)C Chemical compound [Mn].C(C)(C)N=CC=NC(C)C QYLRHYORWRGQOM-UHFFFAOYSA-N 0.000 description 1
- KVJMACFFBNCRFH-UHFFFAOYSA-N [Ru].C(C)(C)N=CC=NC(C)C Chemical compound [Ru].C(C)(C)N=CC=NC(C)C KVJMACFFBNCRFH-UHFFFAOYSA-N 0.000 description 1
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- 230000006837 decompression Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
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- 238000000265 homogenisation Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- 238000001953 recrystallisation Methods 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
- C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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Abstract
【解決手段】中心金属である第1遷移金属及び第2の遷移金属に、配位子として、少なくとも、ジイミン及びカルボニルが配位した下式で示した異種複核錯体の化学蒸着用原料。
(M1、M2は相互に異なる遷移金属;xは0−2、yは1−2、zは1−10;R1〜R4は各々独立にH、C1〜5のアルキル基;R5はH、カルボニル、C1〜7のアルキル基、アリル基、又はアリル誘導体)
【選択図】なし
Description
成膜温度250℃
試料温度:100℃
成膜圧力:5torr
反応ガス(水素)流量:10sccm
成膜時間:60分
Claims (8)
- 化学蒸着法により複合金属薄膜又は複合金属化合物薄膜を製造するための化学蒸着用原料において、
次式で示される、中心金属である第1遷移金属(M1)及び第2の遷移金属(M2)に、配位子として、少なくとも、ジイミン(L)及びカルボニルが配位した異種複核錯体からなる化学蒸着用原料。
- x=1、y=1、z=n+2であり、次式で示される異種複核錯体からなる請求項1に記載された化学蒸着用原料。
- 遷移金属は、Mn、Fe、Co、Ni、Cu、Nb、Mo、Ru、Rh、Ta、W、Ir、Ptのいずれかである請求項1に記載された化学蒸着用原料。
- M1はRu、Mn、Feのいずれか1種であり、M2はMn、Fe、Co、Niのいずれか1種であり、M1とM2は異なる請求項1に記載された化学蒸着用原料。
- R1、R4は、それぞれ、エチル基、プロピル基、ブチル基のいずれか1種である請求項1〜4のいずれかに記載された化学蒸着用原料。
- R2、R3は、それぞれ、水素原子、メチル基、エチル基のいずれか1種である請求項1〜5のいずれかに記載された化学蒸着用原料。
- R5は、カルボニル、メチル、エチル、又はプロピルである請求項1〜6のいずれかに記載された化学蒸着用原料。
- 異種複核錯体からなる原料を気化して原料ガスとし、前記原料ガスを基板表面に導入しつつ加熱する複合金属薄膜又は複合金属化合物薄膜の化学蒸着法において、
前記原料として請求項1〜請求項7のいずれかに記載された化学蒸着用原料を用いる化学蒸着法。
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JP2015096980A JP5952461B1 (ja) | 2015-05-12 | 2015-05-12 | 異種複核錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
TW105113841A TWI596101B (zh) | 2015-05-12 | 2016-05-04 | 由異種複核錯合物所成之化學蒸鍍用原料及使用該化學蒸鍍用原料之化學蒸鍍法 |
PCT/JP2016/063694 WO2016181917A1 (ja) | 2015-05-12 | 2016-05-09 | 異種複核錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
US15/558,011 US10407450B2 (en) | 2015-05-12 | 2016-05-09 | Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films |
EP16792642.7A EP3296426A4 (en) | 2015-05-12 | 2016-05-09 | Chemical vapor deposition starting material comprising heterogeneous polynuclear complex, and chemical vapor deposition method using said chemical vapor deposition starting material |
KR1020177027925A KR102040386B1 (ko) | 2015-05-12 | 2016-05-09 | 이종 복핵 착체를 포함하는 화학 증착용 원료 및 해당 화학 증착용 원료를 사용한 화학 증착법 |
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US10978293B2 (en) | 2018-03-28 | 2021-04-13 | Meidensha Corporation | Oxide film formation method |
US11306396B2 (en) | 2018-11-30 | 2022-04-19 | Meidensha Corporation | Oxide film forming device |
US11680319B2 (en) | 2019-08-30 | 2023-06-20 | Meidensha Corporation | Atomic layer deposition device and atomic layer deposition method |
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US10978293B2 (en) | 2018-03-28 | 2021-04-13 | Meidensha Corporation | Oxide film formation method |
DE112018007372B4 (de) | 2018-03-28 | 2022-07-14 | Meidensha Corporation | Oxidfilmbildungsverfahren |
US11306396B2 (en) | 2018-11-30 | 2022-04-19 | Meidensha Corporation | Oxide film forming device |
US11680319B2 (en) | 2019-08-30 | 2023-06-20 | Meidensha Corporation | Atomic layer deposition device and atomic layer deposition method |
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KR20170127498A (ko) | 2017-11-21 |
WO2016181917A1 (ja) | 2016-11-17 |
US10407450B2 (en) | 2019-09-10 |
JP5952461B1 (ja) | 2016-07-13 |
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