JP2016207994A - High capacity capacitor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film capacitor device which is compact and can obtain large electric energy with large capacity.SOLUTION: The thin film capacitor device 1 includes a first electrode 4, a second electrode 7 positioned to face the first electrode 4, and a dielectric layer 6 formed so as to be sandwiched between the first electrode 4 and the second electrode 7. Between the first electrode 4 and the dielectric layer 6 and between the second electrode 7 and the dielectric layer 6, the collector layer 5 is formed by a collector constituted by a particulate form substrate in which the material is made of any conductive material such as metal, carbon, graphite, diamond, conductive organic substances or conductive ceramics. The particulate form substrate is a current collector composed of two types of substrates, namely, a substrate having an outer diameter dimension at a nano level and a substrate having an outer dimension at a quantum level.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a capacitor device, and more particularly to a large-capacity dielectric thin film capacitor device.

  When a large-capacity capacitor is used as the electrical energy storage device, an electrolytic capacitor or a film capacitor is generally used. In recent years, as the capacity of lithium-ion batteries has been increasing due to the need for large-capacity batteries represented by electric vehicles, the risk of fires of lithium-ion batteries has not been avoided 100%, although there are some fire risks. While propelling electric vehicles, the use of nickel-hydrogen ion batteries and film capacitors as high power as hybrid vehicles has made great progress, and the shift to fuel cell vehicles has increased. In fuel cell vehicles, hybrid vehicle knitting types using nickel hydrogen ion batteries and film capacitors are being promoted.

  On the other hand, a method of securing a large capacity by ultrahigh voltage storage of several thousand V (2000 V or more) based on a ceramic capacitor has been studied, but a high voltage interface has been a problem. Electric double layer batteries with expanded electrolytic capacitors have been actively developed. However, the problem of deterioration due to charging and discharging has not been solved, and the storage voltage is low, and the storage capacity of the lithium ion battery is about two times. Since there is only a sufficient number, the volume becomes a problem and there is a limit to the reduction in manufacturing cost due to the price of the member.

  Also, so-called capacitors such as multilayer ceramic capacitors have a problem of current leakage due to rapid discharge pressure at the time of discharge that degrades the overall performance. Further, a so-called battery that accumulates electric energy by chemical change such as a lithium ion battery has a problem that performance is deteriorated due to a problem of a memory effect when charging and discharging are partially performed.

  In order to solve such various problems, for example, an electrical energy storage device using a giant magnetoresistive effect (referred to as GMR) has been proposed (Patent Document 1, etc.). In these electric energy storage capacitors using GMR, since the magnetic section is formed of a thin film, in order to increase the capacity, the magnetic section is enlarged in a two-dimensional direction to increase the area. There is a problem that it is difficult to reduce the size of the apparatus.

  In addition, the inventor of the present application previously described in Japanese Patent Application Laid-Open No. H10-228867 as a current collector formed at the interface between the electrode material and the dielectric in order to increase the capacity of a thin film capacitor typified by a ceramic capacitor. An invention has been disclosed in which the current collection efficiency is increased to increase the amount of accumulated electric energy by using a power source of about 200 to 2000 nm. These thin-film capacitors use electrical energy stored in a current collector formed at the interface between the electrode material and the dielectric, and can be used for small-capacity products for memory backup, as well as power for electric vehicles. It can be used for a wide range of products, including medium-capacity products for assist, and large-capacity products that can replace storage batteries for power storage such as power supply for electric vehicles. However, the conventional ceramic capacitor has a low capacitance, and it was necessary to connect a large amount in parallel for practical use.

  Further, the withstand voltage of a unit capacitor (called a cell) of such a thin film capacitor is determined by the withstand voltage of a dielectric that is a constituent element thereof, that is, an insulator that separates electrons and holes. For example, in the case of a barium titanate-based dielectric, the thickness of the dielectric is about 200 V at 1 μm. Thin film capacitors have the property of breaking when a voltage exceeding the dielectric strength of the dielectric is applied, so in applications that require high voltage, the thickness of the dielectric is increased or multiple unit capacitors are connected in series. Need to be used.

  In addition, a technology for securing a capacitance by enlarging the surface area of an ion aggregate by laminating a large number of nanocarbons etc. in an electric double layer capacitor has been disclosed. Therefore, it has been difficult to expand the storage capacity to more than 20 times that of a lithium ion battery. On the other hand, a capacitor that does not use an electrolyte such as a ceramic capacitor also has a problem of low capacitance.

  As described above, increasing the capacity of a capacitor is eagerly desired in various applications, and various methods have been proposed, but each method has many problems such as volume reduction, weight reduction, deterioration, and cost. ing.

JP 2008-177535 A Japanese Patent No. 4996775

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a thin film capacitor device that is small in size and can obtain large electric energy with a large capacity.

  In order to solve the above problems, in the invention according to claim 1, in the dielectric thin film capacitor device, the thin film capacitor is positioned so that the first electrode formed of a conductive material faces the first electrode. A second electrode made of a conductive material, and a dielectric layer formed so as to be sandwiched between the first electrode and the second electrode, and the first electrode and the dielectric A particulate base material made of a conductive material of any of metal, carbon, graphite, diamond, conductive organic substance, or conductive ceramic between the body layer and between the second electrode and the dielectric layer The current collector layer is formed by the current collector configured by the above, and the fine particle form base material is composed of two types of base materials having a nano-level outer dimension and a quantum-level outer dimension. Characterized in that it is a electrophile.

  According to the present invention, the surface area of an electrode is dramatically increased by a nano-level conductive fine particle substrate (hereinafter also referred to as nano-substrate) and a quantum-level conductive fine particle substrate (hereinafter also referred to as quantum substrate). At the same time, by increasing the electron sensitivity, it is possible to obtain a thin film capacitor device in which the electrostatic capacity and the storage capacity are dramatically increased by the synergistic effect of increasing the electron fluidity and the electron collecting property.

  According to a second aspect of the present invention, in the thin film capacitor device according to the first aspect, the substrate having the quantum-level outer dimensions is a spherical shape, a rod shape, a tetrapot shape, a long fiber shape, or a short fiber shape. It has the shape which combined either, or those.

  According to the present invention, a large-capacity thin film capacitor device can be realized by any one of various shapes of a base material (quantum base material) having a quantum level external dimension or a combination thereof.

  According to a third aspect of the present invention, in the thin film capacitor device according to the second aspect, the base material having the quantum level outer dimensions is a base material having a hollow shape.

  According to the present invention, by hollowing a substrate having a quantum level outer dimension (quantum substrate), the surface area of the electrode is increased, the electron sensitivity is further increased, and a large-capacity thin film capacitor device can be realized. .

  According to a fourth aspect of the present invention, in the thin film capacitor device according to the first aspect, the current collector layer includes a substrate having a nano-level outer dimension and a substrate having a quantum-level outer dimension. The material or form is single or composite, and a plurality of layers are laminated on the electrode surface.

  According to the present invention, the material or form of the nano-base material and quantum base material is single or composite to form a plurality of layers, so that the surface area of the metal per unit volume is increased and the electron sensitivity is increased. A thin film capacitor device is possible.

  According to a fifth aspect of the present invention, in the thin film capacitor device according to the first aspect, the current collector layer is a substrate having a nano-level outer dimension on the surface of the first electrode or the second electrode. A current collector layer in which multiple layers of materials are stacked, and a substrate having a quantum-level outer dimension is stacked thereon. Each of the materials and forms is single or composite, and multiple layers are stacked on the electrode surface. The thin film capacitor device according to claim 1, wherein the thin film capacitor device is an electric body.

  According to the present invention, by laminating a quantum substrate on a nano substrate, the surface area is expanded and the electron sensitivity is increased, and the electron fluidity is smoothly expanded, thereby enabling a large-capacity thin film capacitor device.

  Moreover, in the invention which concerns on Claim 6, in the thin film capacitor apparatus of Claim 1, the said collector layer has a nano-level external dimension on the 1st electrode or the 2nd electrode surface And a current collector layer in which a plurality of layers having a quantum level external dimension are mixed and laminated.

  According to the present invention, a large-capacity thin film capacitor can be achieved by mixing a nano-base material and a quantum base material and laminating a plurality of layers.

  Further, in the invention according to claim 7, in the thin film capacitor device according to claim 1, the base material having the nano-level outer dimensions has an outer dimension of any one of vertical, horizontal, and height of less than 1000 nm. Preferably, any one of vertical, horizontal, and height is an outer dimension of less than 100 nm.

  According to the present invention, a large-capacity thin film capacitor device can be realized by using an appropriate outer dimension of a nano-base material for carrying out the present invention.

  In the invention according to claim 8, in the thin film capacitor device according to claim 1, the base material having the quantum-size outer dimensions is any one of vertical, horizontal, height, or tip shape of 1 nm or less. It is characterized by the external dimensions.

  According to the present invention, a large-capacity thin film capacitor device can be realized by using an appropriate external dimension of a quantum base material for carrying out the present invention.

  The invention according to claim 9 is the thin film capacitor device according to claim 1, wherein the base material used for the current collector layer is magnetized or superconducted.

  According to the present invention, a thin film capacitor having a larger capacity can be obtained by using a magnetized or superconducting current collector base material.

  In the invention according to claim 10, in the dielectric thin film capacitor device, the thin film capacitor is positioned so that the first electrode formed of a conductive material faces the first electrode. A first electrode and a dielectric layer formed so as to be sandwiched between the first electrode and the second electrode, and the first electrode and the dielectric layer And between the second electrode and the dielectric layer, the material is composed of a fine-grained base material made of a conductive material such as metal, carbon, graphite, diamond, conductive organic material, or conductive ceramic. A current collector layer is formed by a current collector, and the fine-grained base material is formed of a current collector composed of two types of base materials having a nano-level outer dimension and a base material having a quantum-level outer dimension. And said first electrode, said dielectric layer, said second electrode, characterized in that said collector layer is wound multi-layer wound into a roll.

  According to the present invention, a thin film capacitor device having a large capacity and high convenience can be provided by forming the thin film capacitor device in a roll shape.

  According to an eleventh aspect of the present invention, in the thin film capacitor device according to the first and tenth aspects, the thin capacitor device is switchably connected to a charging circuit or a discharging circuit by a switch device, and the discharging circuit Is configured to control the voltage and current by a switching circuit for stable discharge, and constitutes a step-down circuit when the discharge voltage of the capacitor device is higher than a set discharge voltage, and the capacitor When the discharge voltage of the device is low, a circuit that incorporates a coil for receiving a rapid discharge pressure and a capacitor for temporarily storing electric charge is formed so as to constitute a boost type circuit. .

  According to the present invention, a large-capacity thin film capacitor device having appropriate charging and discharging devices according to claims 1 and 10 becomes possible.

  According to the present invention, for a dielectric capacitor device, a nano-level and quantum-level conductive or dielectric fine particle base material is laminated alone or in combination to increase the electrode surface area and increase the electronic sensitivity. Thus, it is possible to obtain a capacitor device having a significantly increased storage capacity by significantly increasing the capacitance and storing it at a high voltage.

It is sectional drawing which showed typically the thin film capacitor apparatus of this invention. It is the enlarged view which showed typically the electrode and collector layer of Example 1 of this invention. It is the enlarged view which showed typically the electrode and collector layer of Example 2 of this invention. It is the enlarged view which showed typically the electrode and collector layer of Example 3 of this invention. It is the enlarged view which showed the example of the quantum level base material typically. The electron micrograph of an example of a quantum level base material is shown. It is a figure which shows the concept of the roll capacitor apparatus of Example 4 of this invention. It is a block diagram of the charge / discharge circuit for the thin film capacitor device of the present invention.

  First, the prior art that led to the idea of the present invention will be described. This “prior art” refers to an invention devised and studied by the applicant prior to the idea of the present invention, and is different from the prior art (known art).

  In general, it is known that the storage capacity is proportional to the dielectric constant of the dielectric, the electrode surface area, and the storage voltage. The conventional dielectric constant is a value measured on the electrode surface in a flat shape, and the effective data when the surface area is increased by stacking nanoparticles or quantum particles on the electrode surface and the electron sensitivity is increased are specified. Absent.

  As conventional technologies, capacitors (or capacitors, also referred to as capacitors) mainly include electrolytic capacitors, ceramic capacitors, and film capacitors. Conventional electric double layer capacitors are electrodes of electrolytic capacitors for the purpose of livestock batteries that are free from ignition risk. This is a method of forming irregularities on the surface, forming a thin film dielectric by oxidation treatment, and ionizing and assembling with an electrolytic solution. Utilizing the relatively high capacitance, the expansion of the ion aggregation part with nanocarbon etc. The capacitance is increased and the manufacturing method is mainly a film winding method. However, the electric double layer capacitor has a low storage voltage (2.5 V to 3.8 V), and has the disadvantages that charging / discharging is not possible and 100% charging / discharging cannot be performed by using the electrolytic solution. In some cases, it has not been widely spread due to reasons such as difficulty in cost reduction.

  Ceramic capacitors, on the other hand, have a powder sintering method and a multilayer film method, but have a feature that the unit capacitance is low but the withstand voltage is high. As on-board devices are required to be miniaturized as noise suppression devices or current smoothing and voltage conversion-based devices, most of them are powder sintering methods. On the other hand, a film type capacitor has been used as a stable withstand voltage device as a film winding capacitor using a plastic film as a dielectric.

  The present invention focuses on ceramic capacitors that have no ignition risk among capacitors, have low charge / discharge deterioration, can take a high storage voltage, and are expected to have a high dielectric constant. By increasing the surface area of the current collector using a fine particle substrate, it has become possible to dramatically increase the electrostatic capacity and the storage capacity. Although the present invention was extremely difficult to realize by the powder sintering method, which is the main manufacturing method of ceramic capacitors, in the present invention, it is realized by vapor deposition method such as sputtering method or coating method by making fine particles. It was possible.

  It has been proved that the electron fluidity is increased and the electric resistance is reduced by atomizing the conductive material to the nano level or the quantum level, and the present invention is applied to the current collector portion of the capacitor at the interface adjacent to the nano level or the quantum level. In order to increase the surface area of the current collector and maximize the electron sensitivity, the capacitance of the capacitor can be dramatically increased by a synergistic effect thereof. In addition, a dielectric capacitor having a high withstand voltage such as a ceramic capacitor can be charged at a high voltage and can be charged at a high capacity.

  Hereinafter, preferred embodiments of a thin film capacitor device according to the present invention will be described in detail with reference to the following examples.

  A preferred embodiment of the thin film capacitor of the present invention will be described with reference to the drawings. In addition, these drawings are schematic for description, and are different from details of actual dimensions and shapes. FIG. 1 is a sectional view schematically showing a dielectric thin film capacitor device 1 according to the present invention. The thin film capacitor device 1 includes a support substrate 2, a buffer layer 3, a first electrode 4, a current collector layer 5, a dielectric layer 6, a second electrode 7, and terminals 8 and 9. .

  The support substrate 2 is not particularly limited, but in the case of a multilayer film type capacitor, a flexible resin film having high insulation used for a film capacitor is used. In the case of a sheet type capacitor, a ceramic-based thin film sheet having a high insulation property is used in addition to the resinous film. For example, it can be formed from a silicon single crystal, a strontium titanate (SrTiO3) single crystal, a magnesium oxide (MgO) single crystal, a zirconium oxide (ZrO2) single crystal, or a glass substrate. A silicon single crystal material is often used from the viewpoint of cost. The thickness of the support base 2 is not particularly limited as long as the mechanical strength of the entire electric energy storage device 1 can be ensured, and may be set to about 10 to 1000 μm, for example.

  The buffer layer 3 is formed as an upper layer of the support base 2 and serves as a barrier layer for preventing the reaction between the support base 2 and the electrode thin film constituting the first electrode 4. The material for forming the buffer layer 3 may be formed of, for example, zirconium oxide (ZrO2), magnesium aluminate (MgAlO4), γ-A12O3, strontium titanate (SrTiO3), lantana aluminate (LaAlO3), or the like. it can. Specifically, a material having excellent lattice matching with the support substrate 2 and a thermal expansion coefficient between the support substrate 2 and the thin film material constituting the dielectric layer 6 is selected from these, and the buffer is selected. Layer 3 is preferably formed. The buffer layer 3 may have a single layer structure or a multilayer structure. And the thickness of the buffer layer 3 will not be specifically limited if the function as a barrier layer which prevents reaction with the base material 2 and the electrode thin film which comprises the 1st electrode 4 can be ensured, for example, 1 thru | or What is necessary is just to set to about 1000 nm. The buffer layer 3 may not be provided. When the buffer layer 3 is not provided, the first electrode 4 is formed on the surface of the support base 2.

  The first electrode 4 can use a conventional ceramic capacitor electrode material, such as copper (Cu), nickel (Ni), etc., such as titanium (Ti), gold (Au), silver (Ag), It can be formed of a conductive metal or alloy such as In addition, the thickness of the electrode thin film of the first electrode 4 is not particularly limited as long as it can function as one electrode of the thin film capacitor 1, and may be set to about 500 to 2000 nm, for example.

  The current collector layer 5 includes a substrate in which the fine particle substrate has a nano-level outer dimension (hereinafter also referred to as a nano-level substrate) and a substrate having a quantum-level outer dimension (hereinafter referred to as a quantum level substrate). 2) current collectors. These current collectors are shown in a spherical shape in the schematic diagram of FIG. 1, but the shape may be any shape such as a spherical shape, a rod shape, a shape having irregularities, a rod shape, a fiber shape, a short fiber shape, etc. The mixture of the shape may be sufficient. Or the shape which made the inside hollow in the said shape may be sufficient.

  The base material of these current collectors is an electron by increasing the surface area of both the nano-level base material and the quantum-level base material, making the particles fine, and mixing the nano-level base material and the quantum-level base material. It is important to work to increase fluidity, lower electrical resistance, and increase electron sensitivity.

  The current collector layer 5 is composed of fine particles of a metallic conductive material, but the material may be any conductive material such as metal, carbon, graphite, diamond, conductive organic material, or conductive ceramic. As the magnetic material, a soft magnetic material such as an iron-cobalt alloy or a material such as manganese oxide that has a very high magnetic resistance at room temperature due to the Colossal effect (supergiant magnetoresistance effect) may be selected. In addition, a superconductive material with extremely high electron sensitivity may be selected.

    FIG. 2 is an enlarged view schematically showing an electrode and a current collector layer part of Example 1 of the present invention. The current collector layer 5 of this example is formed on the surface of the first electrode 4 (on the upper layer in FIG. 2) by sputtering a quantum level fine particle layer 5b on the nano level fine particle layer 5a of the current collector. Molding while controlling the particle size.

  The substrate 5a having a nano-level outer dimension has an outer dimension of less than 1000 nm in length, width, and height, and preferably has an outer dimension of less than 100 nm in length, width, and height. Further, in the present invention, the base material 5b having an outer dimension of a quantum level has an outer dimension of approximately 1 nm or less in any of vertical, horizontal, height, and tip shape. However, these base materials are fine particles, and the shape is not necessarily formed in the same shape, and the size is not necessarily constant in the aspect ratio depending on the shape, and it is also necessary that the same size and shape be used. Absent. In the present invention, the particle size is composed of a substrate 5a having a nano-level outer dimension of 1000 nm or less (more preferably 100 nm or less) and a substrate 5b having a quantum-level outer dimension of 1 nm or less. A good effect can be obtained.

  As the base material 5b of the quantum level, what is marketed as what is called a quantum dot can be utilized, and typical shapes other than a spherical form are typically shown in FIG. These materials called quantum dots can be obtained in various shapes during the manufacturing process. In FIG. 3, a tetrapot shape quantum level, b rod-like quantum level, c long fiber or short fiber quantum level, d rod-like quantum level made hollow, e cube shape quantum level, f rod shape (on the cube) Is shown as an example. These quantum levels may be deformed or combined in the manufacturing process, distribution process, or usage conditions, but the shape itself is not a problem, and the surface area is increased as a current collector. It is important that Moreover, it does not need to be the same shape, These combination and mixing may be sufficient.

  FIG. 6 is an electron microscope enlarged view of a typical cadmium selenide (CdSe) quantum level object in the tetrapot shape. The quantum level of the CdSe tetrapod structure is obtained by growing a benzene ring having cadmium (Cd) and selenium (Se) in the core of zinc blende as several arms. As shown in FIG. 5, the quantum level shape differs depending on the manufacturing method (quantum growth process or mass production process), and does not accurately indicate the shape.

  The current collector layer 5 is set to a thickness of about 200 to 2000 nm as a whole, and the number of stacked layers is formed from several to about 20 layers, and is combined and laminated to a thickness of about 1 μm to 2 μm. A sputtering method and a coating method can be repeatedly laminated a plurality of times on these composite laminates. FIG. 2 shows an example in which two quantum level base materials are stacked on top of two nano level base materials.

  The conductive substrate is used as the material for the fine particles 5a. When the same material as the first electrode 4 is used as the material of the fine particles 5a, the surface area of the electrode can be increased 100 to 1000 times depending on the shape of the fine particles. In addition, when a magnetic material or a superconducting material is used, the amount of electric energy stored can be further increased by further increasing the current collecting effect or electron sensitivity of the magnetic field. Depending on the type of magnetic material or superconducting material and the magnetizing conditions, it may be possible to increase the magnetic material further by several tens of times.

  The dielectric layer 6 is formed in the upper layer of the current collector layer 5 laminated on the first electrode 4. The material of the dielectric layer 6 is made of a material having a high dielectric constant, such as barium titanate. For example, the dielectric layer 6 may be a liquid phase such as a vacuum deposition method, a sputtering method, a pulsed laser deposition method (PLD), a metal organic chemical vapor deposition method (MOCVD), a metal organic decomposition method (MOD), or a sol-gel method. It can be formed using various thin film forming methods such as the CSD method (CSD method). In particular, when the dielectric layer 6 needs to be formed at a low temperature, it is preferable to use plasma CVD, photo CVD, laser CVD, photo CSD, or laser CSD.

  On the surface (upper layer) of the dielectric layer 6, as in the case of the first electrode 4, nano-level fine particles 5a and quantum-level fine particles 5b are formed while controlling the particle diameter by sputtering or the like. The number of layers is about 5 and the current collector layer is combined and laminated to a thickness of about 1 μm to 2 μm.

  The second electrode 7 is formed as a thin film in the upper layer of the current collector layer 5 formed in the upper layer of the dielectric layer 6. The second electrode 7 is not particularly limited as long as it has conductivity, and can be formed of the same material as that of the first electrode 4, but it is preferable to consider lattice matching in manufacturing. Moreover, since it can form at room temperature, it can also form using base metals, such as iron (Fe) and nickel (Ni), and alloys, such as WSi and MoSi. The thickness of the electrode thin film of the second electrode 7 is not particularly limited as long as it can function as the other electrode of the thin film capacitor, and may be set to about 1 to 10 μm, for example.

  The terminal 8 is pulled out from the first electrode 4 and is one terminal for connecting to an input / output circuit (in this embodiment, a charging circuit or a discharging circuit). To pull out the terminal 8, the first electrode 4 is exposed. Partial exposure is performed by masking. The terminal 9 is drawn from the second electrode 7 and is the other terminal for connecting to the input / output circuit. By forming as described above, the current collector layer 5 is formed between the first electrode 4 and the dielectric layer 6 and between the second electrode 7 and the dielectric layer 6.

  The thin film capacitor 1 described above charges (accumulates) electric charges (electric energy) by connecting the terminals 8 and 9 to the charging circuit. At this time, if the nanoparticles 5a and the quantum particles 5b of the current collector layer 5 are made of a magnetic material, current leakage is prevented by the giant magnetoresistance effect, and more charges are accumulated in the dielectric layer 6. Can do. Then, by switching the terminals 8 and 9 from the charging circuit to the discharging circuit, the charged electric charge is discharged and electric energy is supplied to the load to operate as a thin film capacitor.

  According to the present embodiment, between the first electrode 4 and the dielectric layer 6 and between the second electrode 7 and the dielectric layer 6, the nano-level fine particles 5a and the quantum-level fine particles 5b of the current collector are provided. Thus, the surface area of the first electrode 4 and the second electrode 7 can be increased, so that the electrical energy that can be accumulated can be increased.

  In the above example, the fine particle layer is formed on the first or second electrode. However, the fine particle form base material can be formed on the dielectric layer. In this case, it is necessary to consider the lattice matching with the dielectric material for the conductive organic material or the conductive material.

  Further, when the nano base material 5a and the quantum base material 5b of the current collector layer 5 are formed of a magnetic material, when a voltage is applied between the first electrode 4 and the second electrode 7, The electric field can improve the current collection rate due to the magnetic performance of the nanoparticles 5a and the quantum base material 5b, and more electric energy can be accumulated.

  The current collector layer 5 is formed between the first electrode 4 and the dielectric layer 6 and between the second electrode and the dielectric layer 6, respectively. It is possible to increase the current collection rate and increase the electronic sensitivity.

  In addition, when forming the nano base material 5a and the quantum base material 5b of the current collector layer 5 described above with a magnetic material, the fine particle layer may be formed in a pre-magnetized state, or as an electric energy forming device. It may be produced and magnetized by applying a magnetic field from outside before using the electric energy forming apparatus. If magnetized in advance, there is no need to magnetize later, and no circuit or device for that purpose is required.

  FIG. 3 shows another embodiment, in which a current collector layer 5 is formed on the surface of the first electrode 4, and the structure thereof is a nano-level fine particle layer 5a (two layers) and a quantum-level fine particle layer 5b (two layers). In addition, a similar nano fine particle layer 5a (two layers) and quantum fine particle layer 5b (two layers) are formed. As a manufacturing method in this case, a plurality of times of sputtering are sequentially repeated.

  In the embodiment of FIG. 3, the quantum level fine particle layer 5b is formed on the nano level fine particle layer 5a. However, the quantum level fine particle layer 5b is formed on the first electrode 4, and the nano level fine particle layer 5b is formed thereon. It is also possible to form a fine particle layer 5a at a level.

  As described above, the surface area of the current collector layer 5 can be further increased by repeatedly laminating the nano level fine particle layer 5a and the quantum level fine particle layer 5b alternately. This stack can be formed over several layers, and as the number of layers increases, the surface area increases and the current collection rate can be increased, but the current collection rate does not necessarily increase in proportion to the number of layers. However, since the number of times of sputtering increases and manufacturing time and cost are required, the number of layers is actually 5 to 20 layers.

  FIG. 4 shows another embodiment in which the current collector layer 5 is formed by mixing the fine particles of the quantum level fine particle layer 5b between the fine particles of the nano level fine particle layer 5a. Thus, by mixing the quantum level (or the fine particles of the quantum level) between the nano-particles (gap), a gap is generated between the particles, and the current collection efficiency and the electron sensitivity can be effectively increased.

  The current collector having such a structure can be formed by mixing a nano-particle base material and a quantum level base material in advance and coating or sputtering. Further, it is possible to form the nano-particles by dispersing them in a dispersed state (a state in which a film is formed with a gap) or a cluster (a group of several), and sputtering a quantum level substrate thereon. In the embodiment described above, each layer of the thin film capacitor is laminated in a rectangular flat shape, but a free shape can be selected by a masking method and a thin film forming method.

  FIG. 7 shows a thin film capacitor device in which the thin film capacitor device 1 of the above embodiment is formed into a cylindrical shape as a multilayer film. In this thin film capacitor device, a first electrode 4, a current collector layer 5, a dielectric layer 6, a current collector layer 5, a second electrode 7, a current collector layer 5, a dielectric layer 6 are formed on the buffer layer 3. The current collector layer 5 is manufactured as a multi-layer film as a unit unit layer. At the time of winding, on the buffer layer 3 by performing an initial end treatment mainly on a cylindrical shape material made of an insulating material, The first electrode 4 film 4 and the dielectric layers 6 are alternately laminated on the film 4 and then wound up. A current collector layer 5 shown in FIG. 1 is formed on the surface of the first electrode 4 by sputtering or the like, and the current collector layer 5 shown in FIG. It is formed as a thin film layer. This method is a manufacturing process equivalent to a film capacitor, and since an insulating base is used at the bottom, it can be said that there is less risk of dielectric breakdown between unit layers and higher safety than a film capacitor.

  For the terminals 8 and 9 of the electrode section, the process of the film capacitor or the electric double layer capacitor may be used as it is for the outside or external configuration. The number of stacked capacitors, that is, the number of turns of the dielectric layer is set to about 100 to 1000, for example.

(Charge / discharge circuit diagram)
FIG. 8 is a block diagram showing an example of a charge / discharge circuit applied to the above-described embodiment. The first embodiment has a charging circuit C1 and a discharging circuit C2 in which one terminal 8 and the other terminal 9 of the thin film capacitor 20 are connected to each other by a switch 21. In the discharge circuit C2, an auxiliary capacitor 30 is provided between the thin film capacitor 20 and the DC / DC converter 40, and conversion is performed until the amount of charge stored in the thin film capacitor 20 approaches zero.

  When the charging circuit C <b> 1 is selected by operating the switch 21, the thin film capacitor 20 is charged from the power supply device 22. When the thin film capacitor 20 is initially charged, if it is directly connected to the DC power source, a large current may flow and exceed the allowable current value. Therefore, the power supply device 22 has a constant current control function or current limiting means for limiting large current input. It is preferable to add.

  That is, when the discharge circuit C <b> 2 is selected by the switch 21, the charged amount is discharged from the thin film capacitor 20 to the DC / DC converter 40 via the auxiliary coil 23. The auxiliary coil 23 is inserted to receive the rapid discharge pressure. Further, an auxiliary capacitor 30 for temporarily storing charges is incorporated in the front part of the DC / DC converter 40. Thereby, when the discharge voltage of the thin film capacitor 20 is higher than the set discharge voltage by the auxiliary capacitor 30, a step-down type circuit is formed, and when the discharge voltage of the thin film capacitor 20 is low, switching to the step-up type device is performed. .

  The thin film capacitor device of the above embodiment shows an example, and the present invention is not limited to the configuration of the above embodiment, and various design changes can be made without changing the gist thereof.

DESCRIPTION OF SYMBOLS 1 Thin film capacitor apparatus 4 1st electrode 5 Current collector layer 5a Nano size fine particle layer 5b of current collector layer Quantum size fine particle layer 6 of current collector layer Dielectric layer 7 Second electrode 8, 9 Roll capacitor terminal

Claims (11)

In a dielectric thin film capacitor device,
The thin film capacitor includes a first electrode formed of a conductive material;
A second electrode formed of a conductive material positioned to face the first electrode;
A dielectric layer formed so as to be sandwiched between the first electrode and the second electrode,
Between the first electrode and the dielectric layer and between the second electrode and the dielectric layer, the material is any of metal, carbon, graphite, diamond, conductive organic material, or conductive ceramic A current collector layer is formed by a current collector formed of a fine particle form base material made of a conductive material,
A thin-film capacitor device, wherein the fine particle form base material is a current collector composed of two types of base materials having a nano-level outer dimension and a quantum level outer dimension.   The base material having an outer dimension of the quantum level has a spherical shape, a rod shape, a tetrapot shape, a long fiber shape, a short fiber shape, or a combination thereof. Thin film capacitor device.   3. The thin film capacitor device according to claim 2, wherein the base material having an external dimension of the quantum level is a base material having a hollow shape.   The current collector layer is formed by laminating a plurality of layers on the electrode surface, with a base material having a nano-level outer dimension and a base material having a quantum-level outer dimension being a single material or a composite material or form. The thin film capacitor device according to claim 1.   The current collector layer is formed by laminating a plurality of layers having a nano-level outer dimension on the surface of the first electrode or the second electrode, and laminating a substrate having a quantum-level outer dimension from above. The thin film capacitor device according to claim 1, wherein the current collector layer is a current collector in which a plurality of layers are laminated on the electrode surface in a single material or in a composite form.   The current collector layer is a current collector in which a base material having a nano-level outer dimension and a base material having a quantum-level outer dimension are mixed and laminated on the surface of the first electrode or the second electrode. The thin film capacitor device according to claim 1, comprising a layer.   The base material having the nano-level outer dimensions is that the vertical, horizontal, or height is less than 1000 nm, preferably the vertical, horizontal, or height is less than 100 nm. 2. The thin film capacitor device according to claim 1, wherein   2. The thin film capacitor device according to claim 1, wherein the base material having an outer dimension of the quantum level has an outer dimension of 1 nm or less in any of vertical, horizontal, height, and tip shape.   The thin film capacitor device according to claim 1, wherein the base material used for the current collector layer is magnetized or superconductive. In a dielectric thin film capacitor device,
The thin film capacitor includes a first electrode formed of a conductive material;
A second electrode formed of a conductive material positioned to face the first electrode;
A dielectric layer formed so as to be sandwiched between the first electrode and the second electrode,
Between the first electrode and the dielectric layer and between the second electrode and the dielectric layer, the material is any of metal, carbon, graphite, diamond, conductive organic material, or conductive ceramic A current collector layer is formed by a current collector composed of a fine-grained base material made of a conductive material,
The fine particle form base material is formed of a current collector composed of two types of base material having a nano-level outer dimension and a base material having a quantum-level outer dimension,
The thin film capacitor device, wherein the first electrode, the dielectric layer, the second electrode, and the current collector layer are wound in a multilayer shape. The thin capacitor device is switchably connected to a charging circuit or a discharging circuit by a switch device,
The discharge circuit is configured to control voltage and current by a switching circuit in order to discharge stably.
When the discharge voltage of the capacitor device is higher than the set discharge voltage, a step-down type circuit is formed, and when the discharge voltage of the capacitor device is low, a rapid discharge pressure is received so as to form a step-up type circuit. 11. The thin film capacitor device according to claim 1, wherein a circuit incorporating a coil for storing the capacitor and a capacitor for temporarily storing electric charges is connected.