JP2016207931A - Flow channel member, heat exchanger employing the same, and semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flow channel member capable of improving electrical reliability by removing static electricity that is generated in a flow channel, a heat exchanger employing the same, and a semiconductor manufacturing device.SOLUTION: A flow channel member 1 comprises a mounting surface 2 on which an object to be processed is mounted, includes a flow channel 4 in which a fluid flows, and is made of ceramics. In the flow channel member 1, from an inner surface of the flow channel 4 to any other outer surface than the mounting surface 2, a low resistance layer 3 is present. Thus, since the low resistance layer 3 is present in the flow channel member 1 from the inner surface of the flow channel 4 to the other outer surface than the mounting surface 2, static electricity that is generated by frictions of the fluid and the flow channel 4 can be released through the low resistance layer 3 to the outside.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a flow path member, a heat exchanger using the same, and a semiconductor manufacturing apparatus.

  The member for holding the wafer, which is the substrate material of the semiconductor element, is provided with a flow path for flowing a low-temperature or high-temperature fluid in order to cool or heat the wafer in the manufacturing or inspection process. A channel member is used.

  If the flow path member is charged with static electricity during the manufacturing or inspection process, suspended particles (particles) are attracted to the wafer, and the suspended particles that are attracted when wiring to the wafer cause disconnection or missing of the wiring. Therefore, the flow path member is required to have excellent insulation properties because it interferes with the manufacture or inspection of the semiconductor element. Moreover, ceramics are utilized for the flow path member for the above-mentioned use because excellent durability and corrosion resistance are required.

  However, when a fluid is flowed through the flow path, static electricity is generated due to friction between the fluid and the flow path. It will be a hindrance.

  Therefore, in order to solve such a problem, for example, Patent Document 1 proposes to add a charge relaxation agent to the fluid.

JP 2008-16487 A

  However, if a charge relaxation agent is added to the fluid as proposed in Patent Document 1, static electricity generated by the circulation of the fluid can be suppressed. However, as shown in Patent Document 1, the charge relaxation agent is used. When alcohol is an alcohol, since the alcohol is a volatile component, the control of the concentration of the charge relaxation agent in the fluid is complicated, so static electricity generated by friction between the fluid and the flow path can be removed. There is a need for a flow path member that can be configured.

  The present invention has been devised in view of such circumstances, and a flow path member capable of eliminating static electricity generated by friction between a fluid and a flow path, a heat exchanger using the same, and a semiconductor manufacturing apparatus. The purpose is to provide.

  The flow path member of the present invention is a flow path member made of ceramics having a mounting surface on which an object to be processed is mounted and having a flow path through which a fluid flows. A low resistance layer exists over the outer surface other than the mounting surface.

  The heat exchanger of the present invention is characterized in that a metal member is provided between the placement surface of the flow path member having the above-described configuration or between the placement surface and the flow path.

In the semiconductor manufacturing apparatus of the present invention, a metal member is provided between the placement surface of the flow path member having the above-described configuration or between the placement surface and the flow path, and the metal member sucks the wafer. It is an electrode for this, It is characterized by the above-mentioned.

  Since the flow path member of the present invention can neutralize static electricity generated in the flow path, electrical reliability can be improved.

  The heat exchanger of the present invention has high electrical reliability and heat exchange efficiency, and can exhibit heat exchange performance over a long period of time.

  In addition, the semiconductor manufacturing apparatus of the present invention has high electrical reliability and does not interfere with the process of manufacturing or inspecting semiconductor elements.

An example of the flow path member of this embodiment is shown, (a) is an external perspective view, and (b) is a cross-sectional view taken along line II-II in (a). The other example of the flow-path member of this embodiment is shown, (a) is an external appearance perspective view, (b) is sectional drawing cut | disconnected by the III-III line in (a). Another example of the flow path member of this embodiment is shown, (a) is an external perspective view, and (b) is a cross-sectional view taken along line IV-IV in (a). As still another example of the flow path member of the present embodiment, it is a cross-sectional view showing a horizontal cross section with respect to the direction of fluid flow, (a) is a meandering flow path, (b) is a spiral flow path It is. It is the schematic which shows an example of a semiconductor manufacturing apparatus provided with the flow-path member of this embodiment.

  Hereinafter, a flow path member of the present embodiment, a heat exchanger using the same, and a semiconductor manufacturing apparatus will be described in detail with reference to the drawings. In the drawings, parts having the same configuration and function will be described with the same reference numerals. Further, the drawings are schematically shown, and the sizes and positional relationships of various structures in the drawings are not accurately illustrated.

  First, an example of the flow path member of the present embodiment will be described with reference to FIG.

  The flow path member 1 of this embodiment is made of ceramics, includes a mounting surface 2 on which an object to be processed is mounted, and has a flow path 4 through which a fluid flows. In the flow path member 1, the low resistance layer 3 exists from the inner surface of the flow path 4 to the outer surface other than the placement surface 2. Although not shown, the channel member 1 includes a supply port and a discharge port that connect the channel 4 and the outside.

The low resistance layer 3 has a lower electrical resistivity than other portions of the flow path member 1 and has a conductivity sufficient to eliminate static electricity. Specifically, the electrical resistivity of the low resistance layer 3 needs to be 1.0 × 10 ⁵ Ω · m or less at room temperature (about 15 to 30 ° C.). From the viewpoint of removing static electricity more effectively, the low resistivity 3 preferably has an electrical resistivity of 1.0 × 10 ⁴ Ω · m or less.

  Thus, since the low resistance layer 3 is present on the flow path member 1 from the inner surface of the flow path 4 to the outer surface other than the placement surface 2, static electricity generated by friction between the fluid and the flow path 4 can be reduced. It can escape to the outside through the resistance layer 3. Although not shown in FIG. 1, in order to remove static electricity, it is preferable to provide a portion of the low resistance layer 3 exposed on the outer surface of the flow path member 1 and an earth connected to the outside.

Here, the low resistance layer 3 can be confirmed by the following method, for example. First, the wall part provided with the mounting surface 2 is cut | disconnected along a flow path, and an electrode is formed by apply | coating a conductive paste to several places of the inner surface of the flow path 4 at intervals. Next, a conductive paste is applied to the entire outer surface of the flow path member 1 to form an electrode. Note that the conductive paste may be any conductive metal, and for example, an In—Ga based paste or the like can be used. Next, using a commercially available low resistance measuring instrument (for example, Hiresta UXMCP-HT800 manufactured by Mitsubishi Chemical Analytech), one of the resistance measuring instruments is brought into contact with one position of the electrode on the inner surface of the flow path 4. The other needle is brought into contact with an electrode on the outer surface other than the placement surface 2 of the flow path member 1, and the electrical resistance is measured. This measurement is repeated by changing the location of the electrode applied to the inner surface of the flow path 4, and if there is a portion where the electrical resistance is lower than that of other portions and is 1.0 × 10 ⁵ Ω or less, the low resistance layer 3 Can be considered to exist.

  Next, another example of the flow path member of the present embodiment will be described with reference to FIG.

  As shown in FIG. 2, the flow path member 10 of the present embodiment includes the low resistance layer 3 along the flow path 4. With such a configuration, static electricity generated by friction in the entire flow path 4 can be instantaneously removed by the low-resistance layer 3, and electrical reliability is improved.

  Here, whether the low resistance layer 3 exists along the flow path 4 can be confirmed by, for example, the following method. The only difference in the method for confirming the low resistance layer 3 is the configuration of the inner surface electrode and the like. Specifically, the U-shaped inner surface electrode with the mounting surface 2 open on the wall side is provided. Are formed at an arbitrary interval of, for example, about 5 mm along the flow direction of the fluid in the flow path 4. And in one internal electrode, the electrical resistance in the wall part which hits a side surface is confirmed, and presence of a low resistance part is confirmed. Subsequently, the electrical resistance is measured in the same manner in the other internal electrodes, and when the low resistance portion can be connected along the flow path 4, the low resistance layer 3 is formed along the flow path 4. It is considered to exist.

  Ceramics include alumina sintered body, zirconia sintered body, silicon nitride sintered body, aluminum nitride sintered body, silicon carbide sintered body, cordierite sintered body, or a composite thereof. Etc. can be used. Of these ceramics, it is preferable to use a silicon carbide sintered body from the viewpoint of rigidity, thermal conductivity, and light weight.

  When the flow path members 1 and 10 are silicon carbide sintered bodies, the low resistance layer 3 has carbon crystals at the crystal grain boundaries, and the area ratio occupied by the carbon crystals in the low resistance layer 3 is It is preferable that they are 0.7% or more and 5.4% or less. With such a configuration, static electricity generated by friction between the fluid and the flow path 4 can be eliminated without impairing the rigidity of the silicon carbide based sintered body. The carbon crystal here may be any graphite or the like having conductivity.

And the area ratio which the crystal | crystallization of carbon in this low resistance layer 3 occupies is computable with the following method, for example. First, after confirming the low resistance layer 3 by the method described above, the flow path members 1 and 10 are cut so that a cross section including the low resistance layer 3 is obtained. Then, after mirror processing of the cut surface, line analysis is performed with an electron beam microanalyzer (EPMA). The EPMA line analysis is a so-called two-dimensional analysis method, in which the relative change in the content distribution of the contained components can be confirmed by changing the measurement position linearly. is there. By this line analysis, the location where the carbon distribution is detected more than the others is the low resistance layer 3. Then, after confirming the position where the low resistance layer 3 is confirmed by color mapping of EPMA, the target position is traced and blacked out in a photograph of the image of the low resistance layer 3 taken with a scanning electron microscope (SEM). Using the image obtained here, image analysis software “A Image-kun” (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd.) and image analysis software “A Image-kun” will be referred to as Asahi Kasei Engineering Co., Ltd. It is possible to obtain the area ratio by performing image analysis by applying the particle analysis method of (1). As an analysis condition for “A image-kun”, for example, the brightness of the particles may be “dark” and the binarization method may be “automatic”.

  Further, in the flow path members 1 and 10 of the present embodiment, when the area ratio of the carbon crystals in the low resistance layer 3 is 0.7% or more and 5.4% or less, the low resistance layer 3 further includes crystal grains. It is preferable that the area ratio of the boron carbide crystal in the low resistance layer 3 is 0.5% or more and 4.0% or less. Thus, if the area ratio occupied by the boron carbide crystal in the low resistance layer 3 is 0.5% or more and 4.0% or less, the electrical resistance of the low resistance layer 3 is increased without increasing the electrical resistivity. Since it is a silicon carbide based sintered body, it becomes more rigid.

  The area ratio occupied by the boron carbide crystals in the low resistance layer 3 can be calculated, for example, by the following method. First, the position of the low resistance layer 3 is confirmed by the same method as described above, and then the existence positions of carbon and boron are confirmed by color mapping using EPMA. Next, the portion where the existence positions of carbon and boron overlap is traced and blacked out in the photograph of the image of the low resistance layer 3 taken by SEM. The area ratio can be obtained by performing image analysis using the image analysis software “A image-kun” particle analysis method using the image obtained here. As an analysis condition for “A image-kun”, for example, the brightness of the particles may be “dark” and the binarization method may be “automatic”.

  Next, another example of the flow path member of the present embodiment will be described with reference to FIG.

  In the flow path member 20 of this embodiment of the example shown in FIG. 3, a part of the low resistance layer 3 protrudes on the inner surface of the flow path 4 (hereinafter, this protruding portion is referred to as a protruding portion 5). ). When such a configuration is satisfied, the area where the fluid and the low resistance layer 3 come into contact can be increased, the static electricity removal efficiency is improved, and the fluid flowing in the flow path 4 is disturbed by the protrusion 5. Since it becomes easy to generate | occur | produce a flow, the heat exchange efficiency of the to-be-processed object and fluid which are mounted in the mounting surface 2 can be made high.

  Next, an example of the flow path 4 of the flow path member of the present embodiment will be described with reference to FIG.

  The flow path 4 is not particularly limited, but is preferably formed so that the fluid flows in one path. For example, when the fluid is distributed to a plurality of paths with a single supply port, the fluid tends to flow through a flow path having a low pressure related to the fluid, which may cause unevenness in heat exchange with the object to be processed. is there. On the other hand, as shown in FIG. 4, if the flow path 4 is formed so that the fluid flows through one path, the fluid can efficiently flow through the entire flow path 4. Therefore, the efficiency of heat exchange between the workpiece and the fluid can be improved. Further, by forming the flow path 4 in a meandering shape as shown in FIG. 4A or a spiral shape as shown in FIG. 4B, the temperature of the object to be processed placed on the flow path members 30 and 40 can be adjusted. It can be made easier.

  The cross-sectional shape of the flow path 4 is not particularly limited, and may be a circle, an ellipse, a rectangle, or the like. In addition, when the cross-sectional shape of the flow path 4 is a rectangle, it is preferable that a part of the low resistance layer 3 exists in a part of the inner surface of the flow path 4 except at least the corners. When the cross-sectional shape of the flow path 4 is rectangular, the flow velocity of the fluid flowing through the corners of the flow path 4 is slower than the flow velocity of the fluid flowing in other places. Therefore, a part of the low resistance layer 3 is a part of the inner surface of the flow path 4 excluding at least corners, that is, a part of the low resistance layer 3 is present in a place where the flow velocity of fluid is high and static electricity is more likely to occur. By doing so, static electricity can be discharged more efficiently.

  In the following description, the flow path member will be described with reference numeral “100”.

  By providing a metal member between the placement surface 2 of the flow path member 100 of the present embodiment or between the placement surface 2 and the flow path 4, a heat exchanger can be obtained.

  In such a heat exchanger, when the object to be processed is arranged on the metal member or on the mounting surface 2, it has electrical reliability and efficiently transmits heat between the object to be processed and the fluid via the metal member. Can be done well. Therefore, heat exchange performance can be exhibited over a long period of time. Note that it is also possible to adjust the temperature of the object to be processed or the fluid by passing an electric current through the metal member.

  Next, an example of the semiconductor manufacturing apparatus 50 provided with the flow path member 100 of this embodiment will be described with reference to FIG.

  In this semiconductor manufacturing apparatus 50, a metal member 7 is provided between the mounting surface 2 of the flow path member 100 of the present embodiment or between the mounting surface 2 and the flow path 4. It is an electrode for adsorbing. Although not shown, a dielectric layer is provided between the wafer 8 and the metal member 7. Here, by applying a voltage to the metal member 7, the wafer 8 can be attracted and held by an electrostatic attracting force such as a clone force or a Johnson-Rahbek force generated between the wafer 8 and the dielectric layer. Further, when this semiconductor manufacturing apparatus 50 is used as a plasma processing apparatus, the metal member 7 can be used as a lower electrode for generating plasma, and is provided for generating plasma above the wafer 8. By applying a voltage between the upper electrode 6 and the metal member 7 as the lower electrode, plasma generated between the upper electrode 6 and the metal member 7 as the lower electrode can be applied to the wafer 8. It has become. And since the semiconductor manufacturing apparatus 50 is provided with the flow path member 100 of this embodiment, the temperature of the metal member 7 as the lower electrode that becomes high temperature during plasma processing can be controlled to be constant. As a result, the temperature of the wafer 8 is also controlled, so that processing with high dimensional accuracy can be performed.

  Since the flow path member 100 of the present embodiment is excellent in durability and corrosion resistance and has high electrical reliability as described above, the semiconductor manufacturing apparatus 50 of the present embodiment including this is a semiconductor. It can be set as the suitable semiconductor manufacturing apparatus 50 with few troubles in manufacture and an inspection of an element. Further, as the semiconductor manufacturing apparatus 50 of this embodiment, there are a sputtering apparatus, a resist coating apparatus, a CVD apparatus, an etching processing apparatus, etc. in addition to the plasma processing apparatus of FIG. The effect mentioned above can be acquired by providing the flow path member 100 of a form.

  Hereinafter, an example of a method for manufacturing the flow path member 100 of the present embodiment will be described. In the following description, a case where a silicon carbide sintered body is used as the ceramic will be described.

First, a silicon carbide powder as a main component is prepared, and a predetermined amount of a solvent, a sintering aid, and a binder are added thereto, and the mixture is pulverized to a predetermined particle size using a ball mill or a bead mill. 1 slurry is prepared. As the sintering aid to be added, B 4 _C system, it is possible to use a sintering aid of a rare earth oxide -Al ₂ O ₃ system. The binder to be added may be a synthetic resin, such as rosin ester, ethyl cellulose, ethyl hydroxyethyl cellulose, butyral resin, phenol resin, polyethylene oxide resin, poly (2-ethyloxazoline) resin, polyvinyl pyrrolidone resin, Polyacrylic acid resins, polymethacrylic acid resins, polyvinyl alcohol resins, acrylic resins, polyvinyl butyral resins, alkyd resins, polybenzyl, poly m-divinylbenzene, polystyrene, and the like can be used.

In addition, since it is preferable to use what does not affect the characteristic of the flow path member 100 about the ball | bowl and bead used by a mill, for example, it is preferable that a ball | bowl and a bead consist of ceramics, and it is the same as that of silicon carbide, or approximate It is particularly preferable that the composition consists of:

  Next, the first slurry is formed on a green sheet by a known doctor blade method or roll compaction method, and a molded body is obtained by punching it into a desired shape using a mold. In addition, you may form the recessed part used as a supply port, a discharge port, and the flow path 4 by performing laser processing to this molded object.

  Next, the process of joining the molded bodies will be described.

  As the bonding agent used for bonding the formed bodies, a second slurry obtained by adding a predetermined amount of a solvent, a sintering aid, and a binder to silicon carbide powder, which is a ceramic raw material used for forming the formed bodies, is used. .

  Here, the binder added when producing the second slurry is at least one of aromatic resins such as phenol resin, polybenzyl, poly m-divinylbenzene, polyvinyl pyrrolidone resin, polystyrene and the like. The amount added is larger than the amount of the aromatic resin added to the first slurry. By using such a second slurry as a bonding agent, the bonding layer becomes the low resistance layer 3. Since such an aromatic resin is difficult to be thermally decomposed during degreasing, a large amount of carbon particles can remain at the grain boundaries after sintering.

  And after apply | coating a 2nd slurry to the junction part of a some molded object, laminating | stacking molded objects so that it may become a desired shape, and drying, it hold | maintains to predetermined temperature in nitrogen gas, and degreases . And this is hold | maintained for 3 to 10 hours at the temperature of 1900-2050 degreeC in argon gas, and the flow-path member 100 of this embodiment can be obtained.

  Further, when the molded bodies are bonded to each other, the protruding portion 5 can be formed by applying the second slurry so as to partially protrude from the bonded portion to the concave portion that becomes the flow path 4.

  Moreover, in order to make the area ratio which the carbon crystal in the low resistance layer 3 occupies 0.7% or more and 5.4% or less, 6 to 20 parts by mass of an aromatic system with respect to 100 parts by mass of silicon carbide powder. Degreasing may be performed at a temperature of 500 to 650 ° C. using the second slurry to which the resin is added.

Further, in order to make the area ratio occupied by boron carbide crystals in the low resistance layer 3 between 0.5% and 4.0%, a B ₄ C-based sintering is added as a sintering aid to be added to the second slurry. with sintering aids, may be used bonding agent added 0.5 to 5 parts by weight of B _{4 C} based sintering aid relative to silicon carbide powder 100 parts by weight.

  It should be noted that the present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the gist of the present invention.

  Using a semiconductor manufacturing apparatus including the flow path member of this embodiment shown in FIG. 5, a static elimination test for static electricity generated by flowing a fluid through the flow path was performed.

First, silicon carbide powder having an average particle size of 0.4 μm is prepared. 0.1 parts by mass of boron carbide as a sintering aid, polyvinyl alcohol as a binder, acrylic resin with respect to 100 parts by mass of silicon carbide powder. A resin and a phenol resin that is an aromatic resin were weighed and mixed so as to be 1 part by mass, 1 part by mass, and 3 parts by mass, respectively. Next, water as a solvent was added, and the mixture was placed in a ball mill and pulverized to obtain a first slurry. And using this 1st slurry, the several green sheet was produced with the well-known doctor blade method, and laser processing was performed in order to form the recessed part used as a supply port, a discharge port, and a flow path, respectively.

  Next, the 2nd slurry used as the adhesive agent which changed only the addition amount of the phenol resin which is an aromatic resin into the quantity shown in Table 1 with respect to the 1st slurry was produced.

  Next, a plurality of green sheets prepared from the first slurry are laminated so as to have a desired shape, dried by applying a pressure of about 1 MPa through a flat plate-shaped pressurizing tool, and then in nitrogen gas. A molded body was obtained by degreasing at a predetermined temperature for 5 hours. Here, a second slurry serving as an adhesive is used between the green sheets to be laminated, and the degreasing temperature by drying is changed to the temperature shown in Table 1 according to the second slurry used. did.

  And each sample was obtained by baking for about 10 hours at the temperature of 2000 degreeC in argon gas. Two samples were prepared.

  Next, one of the two samples prepared was cut so that a cross section of the bonding layer was obtained. And after performing the mirror surface processing of the cut surface, line analysis by EPMA was performed on the cut surface, and the position of the bonding layer and the position other than the bonding layer were specified from the carbon crystal position. Then, after confirming the position of the carbon crystal by EPMA color mapping for each position, the target position is traced and blacked out in the two photographs of the image of the bonding layer and the portion other than the bonding layer taken by SEM. It was. The area ratio occupied by the carbon crystal at each position was calculated by performing image analysis using the image analysis software “A Image-kun” particle analysis method using the image obtained here. As the analysis conditions for “A image-kun”, for example, the brightness of the particles is “dark” and the binarization method is “automatic”.

  As a result of this measurement, it was confirmed that the area ratio occupied by the carbon crystals in locations other than the bonding layer was 0.4%, and the area ratio occupied by the carbon crystals in the bonding layer was the ratio shown in Table 1.

  Next, in each sample, a portion including the bonding layer of each sample was cut into a prismatic body so that the bonding layer was positioned in the longitudinal direction of the prismatic body. In addition, the size of the prismatic body to be cut out was 5 mm × 5 mm × 50 mm. And the electrical resistivity of the joining layer was computed by measuring the electrical resistivity of the direction from the one end part of this longitudinal direction to the other end part by the well-known 4 terminal method.

  Further, the above prismatic body was processed to 3 mm × 4 mm × 50 mm, and this was measured by an ultrasonic pulse method in accordance with JIS R 1602 (1995), and the elastic modulus as an index of rigidity of each sample was calculated. .

  Then, each of the obtained samples was incorporated into the semiconductor manufacturing apparatus shown in FIG. 5, and a static electricity generation test for static electricity generated in the flow path was performed by circulating a fluid made of a fluorine-based cooling medium through the flow path.

  At this time, a metal film was wound around the sample supply port and the discharge port, and a metal tube was joined to each of the supply port and the discharge port using a metal brazing material. And the rubber tube connected with a chiller was connected to this metal cylinder. The bonding layer exposed on the outer surface of the sample was attached with a ground so that static electricity could be discharged to the outside.

As a method for confirming whether or not static electricity is removed, a fluid made of a fluorine-based cooling medium is circulated through the flow path for 60 minutes, and is exposed to the metal tube of the supply port and the outer surface of the sample every 5 minutes. The current value between the bonding layers was measured, and if the current value was constant, it was considered that static electricity had been removed. If the current value tended to increase gradually, it was considered that static electricity had not been removed. Note that a tester (standard TAR-501 manufactured by Ohm Electric Co., Ltd.) was used for measuring the current value.

  The results are shown in Table 1. In Table 1, a circle is indicated if static electricity has been removed, and a cross is indicated if static electricity has not been removed.

From the results shown in Table 1, the sample No. 1 in which the electrical resistivity of the bonding layer is 1.0 × 10 ⁶ Ω · m. No. 1 could not remove static electricity generated in the flow path. On the other hand, Sample No. in which the electrical resistivity of the bonding layer is 1.0 × 10 ⁵ Ω · m or less. In Nos. 2 to 9, it was found that the static electricity generated in the flow path could be eliminated, so that the bonding layer functioned as a low resistance layer.

  Further, in the bonding layer, Sample No. in which the area ratio of the carbon crystal is 0.7% or more and 5.4% or less. Nos. 2 to 8 were able to eliminate static electricity generated in the flow path and had elastic modulus of 330 MPa or more, and thus were found to be flow path members having high rigidity.

  Next, samples having different area ratios occupied by crystals of boron carbide in the joint as a low resistance layer were prepared, and static electricity could be removed and rigidity was evaluated. In addition, as a manufacturing method, the sample No. 1 of Example 1 was used except that the sintering aid added to the second slurry as the adhesive was changed to the amount shown in Table 2. 6 is the same as the manufacturing method of Sample No. 6. 10 is a sample N. 6 is the same sample.

  Then, after confirming the position of the boron carbide crystal in the bonding layer on the cut surface by color mapping with EPMA by the same method as in Example 1, the target position was traced in the photograph of the bonding layer image taken by SEM. Paint black. Using the image obtained here, the area ratio occupied by the boron carbide crystal was calculated by applying the image analysis software “A Image-kun” particle analysis method.

  Then, the electrical resistivity and elastic modulus of each sample were measured by the same method as in Example 1.

  Next, a static elimination test for static electricity was performed in the same manner as in Example 1. The results are shown in Table 2.

  From the results shown in Table 2, in the bonding layer as the low resistance layer, the sample No. 2 in which the area ratio occupied by the boron carbide crystal is 0.5% to 4.0%. Nos. 12 to 14 can eliminate static electricity generated in the flow path and have a modulus of elasticity of 400 MPa or more, and thus are flow path members having higher rigidity.

1, 10, 20, 30, 40, 100: Channel member 2: Mounting surface 3: Low resistance layer 4: Channel 5: Projection 6: Upper electrode 7: Metal member 8: Wafer 50: Semiconductor manufacturing apparatus

Claims (7)

A flow path member made of ceramics, having a mounting surface on which an object to be processed is mounted, and having a flow path through which a fluid flows.
A flow path member, wherein a low resistance layer exists from an inner surface of the flow path to an outer surface other than the placement surface.   The flow path member according to claim 1, wherein the low-resistance layer exists along the flow path. The ceramic is made of a silicon carbide-based sintered body, and the low resistance layer has carbon crystals at crystal grain boundaries,
3. The flow path member according to claim 1, wherein an area ratio of the carbon crystal in the low resistance layer is 0.7% or more and 5.4% or less. The low resistance layer has a boron carbide crystal at a grain boundary,
4. The flow path member according to claim 3, wherein an area ratio of the boron carbide crystal in the low resistance layer is 0.5% or more and 4.0% or less.   The flow path member according to any one of claims 1 to 4, wherein a part of the low resistance layer protrudes on an inner surface of the flow path.   The heat exchanger according to any one of claims 1 to 5, wherein a metal member is provided between the placement surface of the flow path member according to any one of claims 1 to 5 or the flow path member.   The metal member is provided between the said mounting surface of the flow-path member in any one of Claim 1 thru | or 5, or between the said mounting surface and the said flow path, and this metal member adsorb | sucks a wafer. An apparatus for manufacturing a semiconductor device, comprising: