JP2016194460A - Stress analysis method, stress analysis device, and stress analysis program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To appropriately analyze stress in a sample in a nondestructive way.SOLUTION: A stress analysis method according to the present invention includes: executing, using sample information pertaining to a sample and setting information that includes the structure of a stress source in the sample and the set value of stress, an arithmetic process for calculating stress propagating from the stress source in the setting information to a sample surface layer or the first distribution of displacement of the sample surface layer due to the stress after adjusting the setting information, in such a way that the first distribution converges on the second distribution of stress or displacement measured with regard to the sample surface layer (steps S1-S3); and generating arithmetic result information that includes the structure of the stress source and the set value of stress in the setting information such that a difference between the first distribution and the second distribution is minimized (step S4).SELECTED DRAWING: Figure 4

Description

  The present invention relates to a stress analysis method, a stress analysis apparatus, and a stress analysis program.

  In electronic devices, stress and strain (hereinafter simply referred to as “stress”) may be inevitably introduced during the manufacturing process. The introduced stress may change the characteristics of the electronic device.

  The methods for measuring stress are roughly classified into a transmission method and a surface method. As a transmission method, for example, an electron diffraction method using a transmission electron microscope is known. As the surface method, for example, scanning probe microscopy and Raman spectroscopy are known.

JP 2005-121552 A JP 2007-147607 A

  In the transmission method, the stress inside the sample can be analyzed. However, in the transmission method, there is a limitation on the size of the sample that can be measured, such as when using a transmission electron microscope, and it is difficult to analyze the stress inside the sample in a non-destructive manner.

  On the other hand, in the surface method, it is possible to analyze the stress on the surface layer of the sample nondestructively, but it is difficult to analyze the stress inside the sample.

  According to one aspect of the present invention, using the sample information related to the sample and the setting information including the stress source structure and the stress setting value inside the sample, the surface layer portion of the sample from the stress source of the setting information The calculation process for calculating the first distribution of the stress propagated to the surface layer or the displacement of the surface layer portion due to the stress so that the first distribution converges to the second distribution of the stress or displacement measured for the surface layer portion, Stress analysis that adjusts and executes the setting information and generates calculation result information including a structure of the stress source and a stress setting value of the setting information that minimizes a difference between the first distribution and the second distribution. A method is provided.

  In addition, according to one aspect of the present invention, a stress analysis apparatus and a stress analysis program used for the stress analysis method as described above are provided.

  According to the disclosed technique, it is possible to appropriately analyze the stress inside the sample without being broken.

It is explanatory drawing of the stress propagation within a sample. It is a figure which shows the structural example of the stress analyzer which concerns on 1st Embodiment. It is a figure which shows an example of 2nd distribution. It is a figure which shows an example of the stress analysis flow which concerns on 1st Embodiment. It is explanatory drawing (the 1) of the relationship between the thickness of material, and stress. It is explanatory drawing (the 2) of the relationship between the thickness of material, and stress. It is explanatory drawing (the 3) of the relationship between the thickness of material, and stress. It is explanatory drawing (the 4) of the relationship between the thickness of material, and stress. It is explanatory drawing of the two-dimensional model which concerns on 1st Embodiment. It is explanatory drawing of the three-dimensional model which concerns on 1st Embodiment. It is explanatory drawing of the mesh setting two-dimensional model which concerns on 1st Embodiment. It is explanatory drawing of the mesh setting three-dimensional model which concerns on 1st Embodiment. It is a figure which shows the structural example of the stress analyzer which concerns on 2nd Embodiment. It is a figure which shows an example of the stress analysis flow which concerns on 2nd Embodiment. It is a figure which shows an example of the actual measurement method with the measuring apparatus which concerns on 2nd Embodiment. It is a figure which shows an example of the sample model which concerns on 2nd Embodiment. It is a figure which shows an example of the measurement method of the material thickness which concerns on 2nd Embodiment. It is a figure which shows the structural example of the hardware of a computer.

First, the stress of the sample will be described.
Stress that is unavoidably introduced during the manufacture of an electronic device may change the characteristics of the electronic device, such as electrical characteristics and magnetic characteristics. As means for avoiding such a change in characteristics, it is conceivable to design a structure in which stress is not easily generated, or to search for conditions for heating performed during manufacturing. However, the effect is often not understood unless an electronic device is actually manufactured and analyzed.

Here, FIG. 1 is an explanatory view of stress propagation inside the sample.
A sample 1 illustrated in FIG. 1 includes a first layer 10 and a second layer 20 stacked on the first layer 10, and has a structure including a stress source 30 in the first layer 10. Sample 1 is an electronic device such as a semiconductor device. In the case of a semiconductor device, for example, the second layer 20 is a semiconductor substrate such as silicon (Si), and the first layer 10 is a circuit portion including an element isolation region, a transistor, a wiring layer (wiring, via, interlayer insulating film), and the like. . FIG. 1 schematically illustrates a state in which a predetermined portion in the first layer 10 that is a circuit portion is a stress source 30.

  The stress 30a (illustrated by a dotted line in FIG. 1) of the stress source 30 propagates through the sample 1 and can propagate to the surface layer portion 1a of the sample 1. The stress 30a can propagate to the surface layer portion 1a of the sample 1 from various directions. The stress propagated to the surface layer portion 1a of the sample 1 can appear as a displacement of the surface layer portion 1a, for example. As can be seen from Hook's law, stress and displacement (which can be converted into strain if there is a reference point) can be regarded as equivalent. Therefore, the distribution of the displacement of the surface layer portion 1a is from the internal stress source 30 to the surface layer. It can be regarded as a distribution of the stress 30a propagated to the portion 1a.

  Thus, in a sample of an electronic device such as a semiconductor device including a stress source, the stress of the stress source can propagate to the inside or the surface layer portion. Stress can change the nature of the stress source itself and the nature of the region in which the stress propagates, thereby altering the characteristics of the electronic device. In order to obtain an electronic device having a desired characteristic, it is desirable to manufacture the electronic device by appropriately controlling the stress. In order to enable such manufacturing, the stress that can be generated in the electronic device is appropriate. It is desirable to be analyzed.

Methods for analyzing the stress of a sample such as an electronic device can be broadly divided into a transmission method and a surface method.
The advantage of the transmission method is that the stress inside the sample can be analyzed. If there is a structural observation result of the stress source, detailed stress analysis can be performed. However, the transmission method has a complicated interpretation. For example, in the electron diffraction method, the calculation procedure of the stress and the analysis procedure of the stress source from the calculated stress are complicated, and a high level of expertise is required. Furthermore, the transmission method generally requires a large measuring apparatus. For example, the electron diffraction method requires a transmission electron microscope. In addition, the transmission method has a large sample size restriction. For example, the transmission electron microscope needs to have an in-plane direction with a diameter of 3 mm or less and a transmission direction of 1 μm or less. Therefore, in the case of an electronic device having a size of several tens of mm, it cannot be analyzed nondestructively.

  On the other hand, in a surface method represented by scanning probe microscopy or Raman spectroscopy, it is possible to measure stress in a region where the probe is contacted or irradiated. Many measuring devices used for the surface method are smaller than measuring devices used for the transmission method. Moreover, in the surface method, the calculation of stress is relatively easy. However, the surface method cannot evaluate the stress inside the sample. In order to analyze the stress source inside the sample, it is necessary to perform observation after cutting out and exposing a predetermined cross section, or to perform observation using a transmission method after processing to a predetermined sample size. Therefore, the sample cannot be analyzed nondestructively, and the analysis work becomes very inefficient.

  It is desired that a sample having a relatively large size and a built-in stress source, such as an electronic device, can analyze the stress inside the sample without destroying the sample while suppressing the complexity of the analysis work.

Therefore, stress generated inside a sample such as an electronic device is appropriately analyzed in a non-destructive manner by using a technique described below as the first and second embodiments.
First, the first embodiment will be described.

FIG. 2 is a diagram illustrating a configuration example of the stress analysis apparatus according to the first embodiment.
The stress analysis apparatus 100 illustrated in FIG. 2 includes an arithmetic processing unit 110. The processing function of the stress analyzer 100 can be realized using a computer. The calculation processing unit 110 included in the stress analysis apparatus 100 includes a calculation unit 111, a comparison unit 112, an adjustment unit 113, and a generation unit 114.

  The calculation unit 111 performs a calculation using the sample information and the setting information. The sample information used for the calculation in the calculation unit 111 is information indicating the arrangement (connection relationship, dimensions, position (coordinates), etc.) and material of each element group included in the stress analysis target sample such as an electronic device. Is included. The setting information used for calculation in the calculation unit 111 includes information indicating the structure (size, position (coordinate), etc.) of the stress source existing in the sample to be analyzed and the setting value for the stress of the stress source. included. The calculation unit 111 uses the sample information and the setting information to distribute the stress propagated from the stress source (setting value) included in the setting information to the surface layer of the sample or the distribution of the displacement generated in the surface layer of the sample due to the stress. (Hereinafter referred to as “first distribution”) is calculated by a convolution calculation.

The comparison unit 112 compares the first distribution calculated by the calculation unit 111 with the stress or displacement distribution (hereinafter referred to as “second distribution”) actually measured for the surface layer portion of the sample.
An example of the second distribution is shown in FIG.

  FIG. 3 illustrates a displacement distribution 200, which includes a low portion 220 and a high portion 230 with respect to the reference plane 210. For example, such a displacement distribution is obtained by actual measurement. In addition to the displacement distribution, the stress distribution may be obtained by actual measurement. For example, the displacement distribution can be measured by laser measurement or interference measurement, and the stress distribution can be measured by Raman spectroscopy.

The comparison unit 112 sets the stress distribution or displacement distribution obtained by actual measurement as the second distribution, and compares it with the first distribution calculated by the calculation unit 111.
Based on the comparison result in the comparison unit 112, the adjustment unit 113 adjusts the stress source included in the setting information used in the calculation of the first distribution in the calculation unit 111 so that the first distribution converges on the second distribution. Adjust structure and stress settings.

  The calculating unit 111 calculates the first distribution using the setting information adjusted by the adjusting unit 113, and the comparing unit 112 compares the calculated first distribution with the actually measured second distribution. Processing of the calculation unit 111, the comparison unit 112, and the adjustment unit 113 is performed so that the first distribution converges on the second distribution.

  The generation unit 114 generates calculation result information that is information including the stress source structure and the stress setting value included in the setting information when the difference between the first distribution and the second distribution is minimized. The stress source structure and stress set values included in the calculation result information are used as the stress source structure and stress existing in the sample of the stress analysis target.

  The processing of the calculation unit 111, the comparison unit 112, the adjustment unit 113, and the generation unit 114 is executed according to a numerical optimization algorithm. For example, an algorithm effective for single-objective optimization such as the SIMPLEX method (single method) is used, and the processing of the calculation unit 111, the comparison unit 112, the adjustment unit 113, and the generation unit 114 is executed.

  In addition to the arithmetic processing unit 110 having the above-described configuration, the stress analysis device 100 may include an input unit that inputs various types of information required for executing processing in the arithmetic processing unit 110 to the stress analysis device 100. Further, the stress analysis apparatus 100 may include a storage unit (memory) that stores various types of information such as information on the processing process and processing results in the arithmetic processing unit 110 and information input from the input unit. Further, the stress analysis apparatus 100 may include a display unit that displays various types of information such as information on a processing process and processing result in the arithmetic processing unit 110, information input from the input unit, and information stored in the storage unit. . In addition, the stress analysis apparatus 100 includes an acquisition unit that acquires various types of information necessary for executing the processing in the arithmetic processing unit 110, such as sample information, setting information, and an actually measured second distribution used for the first distribution arithmetic processing. But you can.

Next, an example of a stress analysis flow using the stress analysis apparatus 100 having the above configuration will be described.
FIG. 4 is a diagram illustrating an example of a stress analysis flow according to the first embodiment.

  The stress analysis apparatus 100 uses the calculation unit 111 to obtain the sample information on the sample to be subjected to stress analysis and the setting information including the stress source structure inside the sample and the initial setting value of the stress from the initial set value stress source. A first distribution of the stress propagating to the surface layer portion of the sample or the accompanying displacement is calculated (step S1).

  Next, the stress analysis apparatus 100 uses the first distribution calculated by the comparison unit 112 using the setting information including the initial setting value as the second distribution of stress or displacement actually measured for the surface layer portion of the sample (see FIG. 3 above). (Measured displacement distribution 200 or actually measured stress distribution) is compared (step S2).

  When the comparison unit 112 determines that the difference between the first distribution and the second distribution is not minimum, the stress analysis apparatus 100 uses the adjustment unit 113 to set the initial setting value included in the setting information to the first distribution as the first distribution. Adjustment is made so that the two distributions converge (step S3).

  The stress analysis apparatus 100 uses the setting information including the setting value adjusted by the adjustment unit 113 by the calculation unit 111, and the stress propagated from the stress source of the adjusted setting value to the surface layer portion of the sample or the displacement accompanying it. Is calculated (step S1). Thereafter, the stress analysis apparatus 100 compares the first distribution and the second distribution by the comparison unit 112 (step S2). The stress analysis apparatus 100 repeats the processes of steps S1 to S3 until the comparison unit 112 determines that the difference between the first distribution and the second distribution is the minimum.

  When the comparison unit 112 determines that the difference between the first distribution and the second distribution is the minimum, the stress analysis apparatus 100 uses the generation unit 114 when the difference between the first distribution and the second distribution is the minimum. Calculation result information including the stress source structure and the stress setting value included in the setting information is generated (step S4). The stress source structure and stress set values included in the calculation result information are used as the stress source structure and stress existing in the sample of the stress analysis target.

The stress analysis apparatus 100 performs the above-described processing, and obtains the structure and stress of the stress source existing inside the sample to be subjected to stress analysis such as an electronic device.
The calculation process of the first distribution in step S1 will be further described.

  The initial setting value of the structure of the stress source used for the first calculation process of the first distribution is set using, for example, the second distribution of stress or displacement actually measured for the surface layer portion of a sample such as an electronic device. This second distribution is used for the comparison process with the first distribution in step S2. In this way, when the initial setting value of the structure of the stress source is set by using the second distribution of the actually measured stress or displacement, for example, the contour of a portion where stress or displacement is high or low in the second distribution. Based on the image, an initial set value of the structure of the stress source is set.

  In addition, the initial setting value of the structure of the stress source may be set using the design information and specification information of the sample. For example, the initial setting value of the structure of the stress source is set using design information such as CAD (Computer Aided Design) data of an electronic device that is a sample to be subjected to stress analysis. Sample design information and specification information are acquired by the stress analyzer 100 as sample information, for example.

  As described above, when the initial setting value of the structure of the stress source used for the calculation processing of the first distribution is set using the second distribution actually measured for the sample, the design information of the sample, and the like, the structure of the stress source finally obtained is obtained. A value that does not deviate significantly from (the value of the calculation result information) can be set as an initial set value. Therefore, even when the calculation processing of the first distribution is repeatedly executed by adjusting the set value, the number of repetitions increases, the amount of calculation (the calculation processing load of the stress analysis apparatus 100) increases, the calculation process and calculation result data The increase in the amount of memory used for storing can be suppressed.

The initial setting value set as described above is used, and the first calculation process of the first distribution by the calculation unit 111 is executed.
By the way, it is considered that the stress of the stress source inside the sample propagates from the stress source to the surface layer portion, that is, the actually measured (detected) surface of the second distribution, as described with reference to FIG. In the sample, the distribution of stress propagated from the stress source to the surface layer portion, or the displacement distribution accompanying the stress, that is, the unknown variable for calculating the first distribution is the structure of the stress source (x, y, z coordinates). ), Stress of the stress source, and depth (distance) from the surface layer portion to the stress source. Of these, the distance from the surface layer portion to the stress source (z coordinate of the stress source) can be measured using an infrared microscope or the like, and the substantial unknown variables are the structure of the stress source and its stress. There are two types.

If the stress source is a circular hole having a radius d, the stress σ at a position separated from the circular hole by r can be expressed by the following equation (1).
_{σ = (σ 0/2)} × ^{[2 + d 2 / (4r 2} ) + 3d 4 / (16r 4) ] ... (1)
In this formula (1), σ ₀ is a stress when there is no circular hole.

Equation (1) works if the sample is a uniform material. However, the actual sample for stress analysis has the following drawbacks. First, in a real sample, the stress σ ₀ when there is no stress source (circular hole in equation (1)) cannot be easily obtained. Second, when the stress source is not a simple shape such as a circular hole but a complicated shape, the directionality of the stress propagating from the stress source is complicated. Due to such drawbacks, it is extremely difficult to expand and generalize Equation (1) as described above so that it can be applied to a real sample.

Therefore, in the first distribution calculation process in step S1, the relationship between stress and propagation distance in accordance with reality is used.
5 to 8 are explanatory diagrams of the relationship between the thickness of the material and the stress. FIG. 5 schematically illustrates a cross-section of an example of a sample used for obtaining the relationship between the material thickness and the stress, and FIGS. 6 to 8 illustrate examples of the relationship between the material thickness and the stress, respectively. .

  In order to obtain the relationship between the material thickness and the stress, for example, a sample 300 as shown in FIG. 5 is prepared. A sample 300 shown in FIG. 5 has a structure in which a silicide layer 320 is formed on a surface portion of a silicon substrate 310, and the silicon substrate 310 is wedged using a technique such as polishing. When the silicide layer 320 is used as a stress source, the sample 300 can be said to have a configuration in which a silicon substrate 310 whose thickness T varies in a wedge shape is stacked on the stress source (silicide layer 320).

  For such a sample 300, for example, as shown in FIG. 5, a silicon substrate 310 is irradiated with a laser beam 330 (shown by a dotted line in FIG. 5) having a predetermined frequency, and a Raman scattered light 340 (FIG. 5) generated thereby. (Shown with a dotted line). Based on the detected frequency of the Raman scattered light 340, the stress Σ of the silicon substrate 310 is obtained. The relationship between the thickness T of the silicon substrate 310 and the stress Σ is obtained by changing the irradiation position of the laser beam 330 irradiated to the silicon substrate 310 whose thickness changes in a wedge shape and obtaining the stress Σ at each irradiation position. Can be acquired.

  The relationship between the thickness T of the silicon substrate 310 and the stress Σ acquired for the sample 300 is as shown in FIG. The horizontal axis of FIG. 6 represents the logarithm of thickness T, and the vertical axis represents the logarithm of stress Σ. The stress Σ decreases as the thickness T increases. In the case of the log-log graph of FIG. 6, the logarithm of the stress Σ linearly decreases monotonically as the logarithm of the thickness T increases. .

Similar to the example of the silicon substrate 310, the relationship between the thickness and stress of various materials can be obtained.
According to the relation between the thickness of the material and the stress as described above, it is possible to predict the attenuation rate of the stress accompanying propagation at the distance based on the thickness of the material, that is, the distance from the stress source. By using such a relationship, it is possible to calculate the stress that propagates in the material in the surface layer region from the stress source for the sample to be analyzed. That is, if the relationship between the thickness and stress of the material included in the region between the stress source and the surface layer portion is used, the stress can be obtained at a distance from the stress source to the surface layer portion or an arbitrary distance between the stress source and the surface layer portion. To what extent the source stress attenuates, in other words, the value of the stress at that distance can be calculated.

  For example, using the relationship between the material thickness and stress as described above (stress decay rate), all the coordinates (initial or adjusted set values) corresponding to the stress source of the sample to be stress analyzed are respectively The stress that propagates to all coordinates corresponding to the surface layer is calculated. Then, the calculated propagation stress is added to all the coordinates corresponding to the surface layer portion. That is, a convolution operation is executed. Thereby, the distribution of the stress propagating from the stress source to the surface layer portion, or the distribution of the displacement accompanying the stress, that is, the first distribution can be calculated.

In such a calculation process, when the material included in the region of the surface layer portion from the stress source is a single type, the relationship between the thickness T of the single type material and the stress Σ as illustrated in FIG. 6 may be used. .
When there are a plurality of types of materials included in the surface layer region from the stress source, the relationship between the thickness T and the stress Σ acquired for each material as illustrated in FIG. 7 is used. For example, when two types of materials A and B are included in the surface layer region from the stress source, the thickness T and the stress Σ for each of the materials A and B as shown in FIG. Get the relationship. Using these relationships, a first distribution which is a distribution of stress propagating from the stress source to the surface layer portion or a displacement accompanying the stress is calculated.

  The type of material included in the surface layer region from the stress source of the sample to be subjected to stress analysis and the thickness (coordinates) of each material can be obtained from the sample information regarding the sample, for example. If the thickness of each material is unknown, it may be performed in addition to one of the unknown variables along with the stress source structure and stress.

In addition, it is possible to use the relations C, D, and E in which the stress Σ decreases at various reduction rates with respect to the thickness T as illustrated in FIG.
In the first distribution calculation process in step S1, a two-dimensional or three-dimensional model exemplified in the following FIG. 9 or FIG. 10 is applied to the stress analysis target sample, and a predetermined calculation process is executed. be able to.

  FIG. 9 is an explanatory diagram of the two-dimensional model according to the first embodiment. FIG. 9A shows a configuration example of the two-dimensional model in the sample in-plane direction, and FIG. 9B shows a configuration example of the two-dimensional model in the sample depth direction.

  In the calculation process of the first distribution, for example, a two-dimensional model 400a as shown in FIGS. 9A and 9B is applied. The two-dimensional model 400a includes a sample model 410 that is a model of a sample to be subjected to stress analysis. The sample model 410 in FIGS. 9A and 9B includes a first layer 411 and a second layer 412 stacked on the first layer 411. The stress source 413 (413a) is included in the first layer 411. , 413b). The second layer 412 includes one or more materials. In FIG. 9A, a top view of the second layer 412 is schematically shown, and the stress source 413 in the first layer 411 is indicated by a dotted line. FIG. 9B schematically illustrates the L1-L1 cross section of FIG.

In the first distribution calculation process (step S1) using the two-dimensional model 400a, for example, the process is executed as follows.
First, coordinates (x _n , y _n , z _n ) (n = 0, 1, 2,... N) are set for the sample model 410.

  Next, initial values of the coordinates of the stress source 413 (the structure of the stress source 413) and the stress of the stress source 413 on the stress source surface P including the stress source 413 are set. For example, as described above, the initial setting value of the stress source 413 is set using the second distribution of stress or displacement actually measured for the sample to be analyzed, the design information of the sample, and the like.

  Next, from one coordinate of the stress source 413 on the stress source surface P, the stress propagated to each of all the coordinates of the detection surface Q where the second distribution of the stress or displacement of the sample is detected or the displacement accompanying therewith is calculated. . For this calculation, the relationship between the thickness of the material (group) included in the region from the stress source surface P to the detection surface Q and the stress (stress attenuation rate) is used. The same calculation is performed for other coordinates of the stress source 413 on the stress source surface P, and the stress propagated to each of all the coordinates of the detection surface Q or the displacement accompanying the coordinate is sequentially added at each coordinate. Such processing is executed for all coordinates of the stress source 413 on the stress source surface P, and the first distribution of the detection surface Q is acquired.

  The first distribution thus obtained is compared with the actually measured second distribution (step S2), and if the difference from the second distribution is not minimized, the stress is converged to the second distribution. The initial setting values of the structure (coordinates) and stress of the source 413 are adjusted, and new setting values are set (step S3). Such acquisition of the first distribution, comparison between the acquired first distribution and the actually measured second distribution, and adjustment of the set value are performed until the difference between the first distribution and the second distribution is minimized. The set value at the time of the minimum is the structure and stress of the stress source inside the sample.

  When obtaining the first distribution, if the distance from the stress source surface P (stress source 413) to the detection surface Q (depth of the stress source 413) is unknown, this is also an initial set value or a new set value. In addition to one of the components, the calculation of the first distribution may be executed. In the case where a plurality of types of materials are included in the region from the stress source surface P to the detection surface Q, and the thickness of each material is unknown, it is also added to one of the unknown variables, What is necessary is just to perform a calculation.

In the calculation processing of the first distribution (step S1), the two-dimensional model 400a may be expanded and a three-dimensional model 400b as illustrated in the following FIG. 10 may be applied.
FIG. 10 is an explanatory diagram of the three-dimensional model according to the first embodiment. FIG. 10 shows a configuration example of the three-dimensional model in the sample depth direction. FIG. 10 schematically illustrates a cross section corresponding to the position of the L1-L1 cross section in FIG.

  For example, assuming that the inside of the stress source 413 is uniform, the stress propagation from the stress source surface P to the detection surface Q is calculated without considering the influence of the element (group) included in the inside of the stress source 413. In this case, a two-dimensional model 400a as shown in FIG. 9 can be applied.

  On the other hand, assuming that the inside of the stress source 413 is not uniform, the stress from the inside of the stress source 413 to the detection surface Q is considered in consideration of the stress propagation from the element (group) 414 included in the inside of the stress source 413. When calculating propagation, it is preferable to apply a three-dimensional model 400b as shown in FIG. For example, when the resolution of the probe when measuring the second distribution is relatively high, an analysis using such a three-dimensional model 400b is performed.

  When the three-dimensional model 400 b is used, the structure and stress setting values are set for the element (group) 414 inside the stress source 413. Then, the stress on the stress source surface P is calculated using the relationship between the thickness of the material (group) included in the region from the element (group) 414 to the stress source surface P and the stress. Thereafter, as in the case of the two-dimensional model 400a, the calculated stress and the relationship between the thickness of the material (group) included in the region from the stress source surface P to the detection surface Q and the stress are used to detect the detection surface. A first distribution at Q is obtained. The acquisition of the first distribution (step S1), the comparison between the acquired first distribution and the actually measured second distribution (step S2), and the adjustment of the set value (step S3) are the first distribution and the second distribution. This is done until the difference between is minimized. The setting value at the time of the minimum is the structure and stress of the element (group) 414 included in the stress source 413. In this way, the internal structure and stress of the stress source 413 are analyzed.

  In addition, when the size of the structure of the stress source 413 is not more than a certain value with respect to the thickness of the sample (sample model 410), for example, when the size is 1/10 or less, the two-dimensional model is preferable. It is. When the size of the structure of the stress source 413 is a certain value or more with respect to the thickness of the sample (sample model 410), for example, when the size is 1/10 or more, the three-dimensional model is preferable. .

  For example, let us consider a case where the purpose is to analyze the stress due to a single component incorporated in a module and having a relatively small size, for example, 1/10 or less of the thickness of the module. In such a case, the stress source structure is simplified (modeled) to a rectangular parallelepiped or flat plate, and sufficient accuracy is obtained by analyzing the stress propagation from the stress source surface P using a two-dimensional model of x and y. The structure of the stress source and the stress can be specified.

  On the other hand, consider the case where the purpose is to analyze the stress in an element (group) contained in the component, for example, a size of 1/10 or more of the thickness of the component. For example, it is a case where the analysis is intended to include stress due to elements (groups) such as transistors and STI (Shallow Trench Isolation) in a semiconductor element. In such a case, using a three-dimensional model of x, y, z and taking into account the stress propagation from the element (group) to a predetermined stress source surface, the accuracy of the stress source structure and stress is improved. It becomes possible.

In the two-dimensional model and the three-dimensional model as described above, a mesh may be set so as to cover the entire sample model of the stress analysis target.
FIG. 11 is an explanatory diagram of the mesh setting two-dimensional model according to the first embodiment. FIG. 11A shows a configuration example in the sample in-plane direction of the two-dimensional model in which the mesh is set, and FIG. 11B shows a configuration example in the sample depth direction of the two-dimensional model in which the mesh is set. Show. FIG. 12 is an explanatory diagram of a mesh setting three-dimensional model according to the first embodiment. FIG. 12 shows a configuration example in the sample depth direction of a three-dimensional model in which a mesh is set.

  As illustrated in FIG. 11, a mesh 420 can be set in the two-dimensional model 400 a so as to cover the entire sample model 410. Further, as illustrated in FIG. 12, a mesh 420 can be set in the three-dimensional model 400b so as to cover the entire sample model 410.

  By setting the mesh 420 in the two-dimensional model 400a and the three-dimensional model 400b as described above, the stress or displacement obtained by the stress propagation calculation as described above can be specified by the coordinates of each grid line or grid line intersection position. Can be obtained. Furthermore, if a predetermined range is specified by grids or grid lines, it is possible to acquire the distribution of stress or displacement in the specified range, and display the acquired stress or displacement distribution. It is possible to visualize the same.

  As described above, the stress propagation from the set stress source 413 to the detection surface Q is calculated using the relationship between the structure of the stress source, the set value of the stress, and the attenuation rate of the stress. Obtain a first distribution of stress or displacement. The acquired first distribution is compared with the second distribution of stress or displacement actually measured for the detection surface Q. Then, based on the comparison result, the set value is adjusted so that the first distribution converges on the second distribution, the first distribution is calculated using the adjusted set value, and the comparison is made with the second distribution. . Such processing is executed so that the difference between the first distribution and the second distribution is minimized, and the set value when the difference is minimized is set as the structure and stress of the stress source of the sample. As a result, it is possible to appropriately analyze the stress inside the sample in a non-destructive manner.

  Because non-destructive sample stress analysis is possible, for example, even a sample (product) extracted from the production line during the production process can be returned to the production line after the stress analysis is performed. It will be advantageous. In addition, since a destructive process such as cutting a predetermined cross section or polishing is not required, the time and cost spent for stress analysis can be greatly reduced, and the throughput rate of stress analysis can be significantly improved. Furthermore, since the stress source and stress inside the sample can be analyzed simply by performing the above-described processing, the stress analysis period can be shortened and the product development period can be shortened.

Next, a second embodiment will be described.
FIG. 13 is a diagram illustrating a configuration example of a stress analysis apparatus according to the second embodiment, and FIG. 14 is a diagram illustrating an example of a stress analysis flow according to the second embodiment.

  A stress analysis apparatus 100a illustrated in FIG. 13 includes an arithmetic processing unit 110, an input unit 120, a storage unit 130, a display unit 140, and an acquisition unit 150. The processing function of the stress analysis apparatus 100a can be realized using a computer.

  The arithmetic processing unit 110 includes a setting unit 115 in addition to the arithmetic unit 111, the comparison unit 112, the adjustment unit 113, and the generation unit 114 as described in the first embodiment. The setting unit 115 uses the sample information related to the stress analysis target sample and the second distribution information actually measured for the sample, the sample model used for the calculation processing of the first distribution, and the structure of the stress source inside the sample. And an initial set value of the stress.

The input unit 120 inputs various information required for executing the processing in the arithmetic processing unit 110 to the stress analysis apparatus 100a.
The storage unit 130 stores various types of information such as information on the processing process and processing results in the arithmetic processing unit 110 and information input from the input unit.

The display unit 140 displays various types of information such as information on the processing process and processing results in the arithmetic processing unit 110, information input from the input unit, and information stored in the storage unit.
The acquisition unit 150 acquires various types of information necessary for executing the processing in the arithmetic processing unit 110, such as sample information on a stress analysis target and a measured second distribution.

  For example, a measurement device 500 that measures the second distribution is connected to the stress analysis device 100a using a wired or wireless communication unit. In this case, information on the second distribution actually measured by the measuring apparatus 500 is acquired by the acquiring unit 150 of the stress analyzing apparatus 100a using a predetermined communication unit.

The stress analysis apparatus 100a having the above configuration is used, and for example, a stress analysis flow as shown in FIG. 14 is executed.
In the stress analysis apparatus 100a, sample information regarding the sample to be analyzed is acquired (step S10). The sample information includes information indicating the arrangement and material of each element group included in the sample. It should be noted that the arrangement of the element groups does not necessarily have to be exact so as to match the actual sample. The sample information is acquired by the acquisition unit 150, for example. In addition, the sample information may be acquired by input from the input unit 120.

  Further, in the stress analysis apparatus 100a, information on the second distribution, which is a stress or displacement distribution measured for the surface layer portion of the sample to be analyzed, is acquired (step S11). The second distribution is acquired by the acquisition unit 150. This second distribution is actually measured by the measuring apparatus 500 in advance.

An example of the actual measurement method in the measurement apparatus according to the second embodiment is shown in FIG.
For example, as shown in FIG. 15A, the measurement apparatus 500 makes a predetermined incident light 510 such as a laser beam incident on the sample 101 and detects the emitted light 520 emitted from the sample 101 when the incident light 510 is incident. Thus, the second distribution of the displacement or stress of the surface layer portion of the sample 101 is acquired. For the measurement, a Raman spectroscopic device or the like can be used.

  Alternatively, the measurement apparatus 500 acquires the second distribution of the displacement or stress of the surface layer portion of the sample 101 by scanning the sample 101 with a cantilever 530, for example, as shown in FIG. For the measurement, a scanning probe microscope or the like can be used.

The information on the second distribution acquired by the measuring apparatus 500 is stored in, for example, a storage unit (memory) included in the measuring apparatus 500.
For example, the acquisition unit 150 acquires information on the second distribution actually measured by the measurement device 500 from the measurement device 500. However, the acquisition unit 150 is not necessarily required to acquire the second distribution information directly from the measurement apparatus 500. The acquisition unit 150 can also acquire information on the second distribution held outside the measurement apparatus 500 after being actually measured by the measurement apparatus 500.

  In the stress analyzer 100a, the setting unit 115 of the arithmetic processing unit 110 uses the sample information acquired by the acquiring unit 150 (or the input unit 120) to set a sample model that can be handled by coordinates (step) S12). For example, the two-dimensional model or the three-dimensional model as described above is set as the sample model.

  Further, in the stress analysis apparatus 100a, the setting unit 115 uses the second distribution acquired by the acquisition unit 150 to set an initial setting value of the structure (coordinates) of the stress source included in the sample (step). S13). For example, the setting unit 115 sets an initial setting value of the structure of the stress source from the geometric pattern appearing in the second distribution. Thus, when setting the initial setting value of the structure of the stress source, it is preferable to set based on the contour line of the geometric pattern appearing in the second distribution.

In the stress analyzer 100a, the setting unit 115 sets a mesh covering the entire sample model (step S14).
An example of a sample model according to the second embodiment is shown in FIG. Here, a two-dimensional model is taken as an example. FIG. 16A shows a configuration example of the sample model in the sample in-plane direction, and FIG. 16B shows a configuration example of the sample model in the sample depth direction.

  The sample model 610 of FIG. 16 includes a first layer 611 and a second layer 612 that is laminated on the first layer 611 and uses one or more kinds of materials, and is configured with a set stress source 613 (613a, 613a, 613b) is included in the first layer 611. FIG. 16A schematically shows a top view of the second layer 612, and the stress source 613 in the first layer 611 is indicated by a dotted line. FIG. 16B schematically illustrates the L2-L2 cross section of FIG.

Coordinates (x _n , y _n , z _n ) (n = 0, 1, 2,... N) are set for such a sample model 610. In the sample model 610, a stress source surface P including the stress source 613 and a detection surface Q on which a second distribution of the stress or displacement of the sample is detected are set. The second distribution acquired by the acquisition unit 150 is used, and an initial setting value of the structure of the stress source 613 is set. Further, a mesh 620 is set in the sample model 610 so as to cover it as a whole.

The following processing will be described using the sample model 610 as shown in FIG. 16 as an example.
In the stress analysis apparatus 100a, the initial setting value of stress is set by the setting unit 115 for the structure of the stress source 613 having the initial setting value on the stress source surface P of the sample model 610 (step S15).

Next, in the stress analysis apparatus 100a, the calculation unit 111 of the calculation processing unit 110 converts each coordinate (x _n , y _n , z _n ) of the stress source 613 on the stress source surface P to all the coordinates on the detection surface Q. The propagating stress or the displacement accompanying it is calculated (step S16). For this calculation, the relationship between the thickness of the material (group) included in the region from the stress source surface P to the detection surface Q and the stress (stress attenuation rate) is used.

  For example, a sample as illustrated in FIG. 5 is used in advance for various materials, and the relationship between the thickness of the material and the stress as illustrated in FIGS. For example, the stress analysis apparatus 100a holds the relationship between the thicknesses and stresses of various materials thus obtained as a stress attenuation rate database (DB) 116. The stress attenuation rate DB 116 may be accessible via a wired or wireless communication unit and may be provided outside the stress analysis apparatus 100a.

  In the calculation of step S16, in the stress analysis apparatus 100a, for example, the material used for the sample of the stress analysis target is specified based on the sample information acquired by the acquisition unit 150 (or the input unit 120). Then, the relationship between the thickness and the stress of the specified material included in the stress attenuation rate DB 116 is used and propagates from one coordinate of the stress source 613 on the stress source surface P to all the coordinates on the detection surface Q. Stress or displacement is calculated respectively.

  At that time, if the thickness (z coordinate) of the material included in the region from the stress source surface P to the detection surface Q is known based on the sample information, the stress is determined from the type of the material, its thickness, and the relationship between the thickness and the stress. From one coordinate of the stress source 613 on the source surface P, the stress or displacement propagated to each of all the coordinates on the detection surface Q is calculated. When the thickness (z coordinate) of the material is unknown, the calculation may be executed in addition to one of unknown variables (initial setting values) together with the structure and stress of the stress source 613.

When there is a real sample, the thickness of the material included in the region from the stress source surface P to the detection surface Q may be obtained by actual measurement of the sample.
An example of the material thickness measurement method according to the second embodiment is shown in FIG.

  For example, a sound wave or light 540 is incident on the actual sample 102. For example, ultrasonic waves are used as sound waves, and infrared light is used as light. An ultrasonic microscope, an infrared microscope, etc. can be used for the measurement. The incident sound wave or light 540 is reflected by the internal structure or material interface of the sample 102 or attenuated by the internal structure or material interface when passing through the sample 102. The reflection signal 550 and the transmission signal 560 from the sample 102 are detected, and the thickness of the material used for the sample 102 is obtained.

  If there is an actual sample 102, the unknown variable (initial setting value) can be made into two types, the structure of the stress source 613 and the stress, by using the thickness of the material thus obtained. By excluding the material thickness from the unknown variable, it is possible to reduce the processing load when executing the processing of steps S16 to S21, increase the speed of the processing, and reduce the memory usage, as will be described later. it can.

  In the stress analysis apparatus 100a, each stress or displacement of all the coordinates of the detection surface Q calculated as described above is stored in the storage unit 130 so as to be added for each coordinate (step S17). ).

Then, it is determined whether or not the calculation in step S16 and the addition in step S17 have been executed for all coordinates of the stress source 613 on the stress source surface P (step S18).
When it is determined that calculation and addition have not been performed for all the coordinates of the stress source 613 on the stress source surface P, the stress analysis apparatus 100a determines that the coordinates of the stress source 613 on the stress source surface P are (x _{n + 1} , y _{n + 1} , z _{n + 1} ) (step S19), and the operations and additions of steps S16 and S17 are executed.

  In the stress analysis apparatus 100a, in step S18, the coordinate change in step S19, steps S16 and S17 are performed until it is determined that the calculations and additions in steps S16 and S17 have been executed for all the coordinates of the stress source 613 on the stress source surface P. Are calculated and added.

  By executing the calculations and additions of steps S16 and S17 for all the coordinates of the stress source 613 on the stress source surface P, the stress propagating from the respective coordinates of the stress source 613 on the stress source surface P to the detection surface Q, respectively, The accompanying displacement is calculated by a convolution calculation. Accordingly, the distribution of the stress or displacement propagated to the detection surface Q at the time of the structure and stress of the stress source 613 of the initial setting value (or the material thickness when the material thickness is also an unknown variable) is obtained. One distribution is acquired.

  In step S18, when it is determined that calculation and addition have been executed for all coordinates of the stress source 613 on the stress source surface P, that is, when the first distribution is acquired, the stress analysis apparatus 100a performs the following processing. Executed.

  That is, in the stress analysis apparatus 100a, the comparison unit 112 compares the first distribution acquired by the calculation unit 111 and the second distribution actually measured by the measurement apparatus 500 and acquired by the acquisition unit 150 (step S20). . In the stress analysis apparatus 100a, whether or not the difference between the first distribution and the second distribution is the minimum is determined by the comparison by the comparison unit 112.

  In the stress analysis apparatus 100a, when it is determined that the difference between the first distribution and the second distribution is not minimum, the adjustment unit 113 adjusts the structure and stress of the stress source 613 so that the first distribution converges on the second distribution. The initial set value (or further the material thickness) is adjusted, and a new set value is set (step S21).

  In the stress analysis apparatus 100a, the structure of the stress source 613 newly set by the adjustment unit 113 and the set value of stress (or further the thickness of the material) are used, and the processes after step S16 are executed. In the stress analysis apparatus 100a, adjustment of the set value in step S21 and processing subsequent to step S16 using the same are performed until it is determined in step S20 that the difference between the first distribution and the second distribution is minimum. The

  In step S20, when it is determined that the difference between the first distribution and the second distribution is the minimum, in the stress analysis apparatus 100a, the generation unit 114 causes the generation unit 114 to determine the structure and stress (or the stress) (or the stress). Further, calculation result information including a set value of the material thickness is generated (step S22). The set value of the structure and stress (or further material thickness) of the stress source 613 included in the calculation result information is set as the structure and stress (or further material thickness) of the stress source existing inside the sample.

For the processing of the calculation unit 111, the comparison unit 112, the adjustment unit 113, and the generation unit 114, for example, a numerical optimization algorithm effective for single-objective optimization such as the SIMPLEX method is used.
In the stress analysis apparatus 100a, the structure and stress of the stress source existing in the sample are specified by executing the above-described processing.

  For example, in the case of the sample model 610 shown in FIG. 16, the final one of the stress sources 613a is a length Lxa = 3.6 μm, a length Lya = 1.1 μm, and a stress Σa = 2.3 GPa. Specifically, the final other stress source 613b is specifically specified such that the length Lxb = 2.1 μm, the length Lyb = 1.1 μm, and the stress Σb = 1.5 GPa. Is possible.

  In the stress analysis apparatus 100a, for example, the structure and stress (or further the material thickness) of the stress source 613 included in the calculation result information acquired in step S22 can be stored in the storage unit 130.

  Further, in the stress analysis apparatus 100a, for example, the structure and stress (or further the material thickness) of the stress source 613 included in the calculation result information acquired in step S22 or stored in the storage unit 130 after that are displayed. It can be displayed on a display device such as a monitor by the unit 140.

  Further, in the stress analysis apparatus 100a, the mesh 620 set for the sample model 610 is used, for example, a range is specified from the input unit 120, and the distribution of the stress or displacement in the specified range is monitored by the display unit 140 or the like. It can be displayed on a display device.

  In the stress analysis method using the stress analysis apparatus 100a, for example, the relationship between thickness and stress (stress attenuation rate) is prepared in advance for various materials that may be used in various electronic devices. In addition, the sample information required for calculating the stress propagated from the stress source of the sample to be analyzed to the surface layer, at least information on the material of the sample, and even the second distribution of the stress or displacement actually measured for the surface layer is obtained. For example, the structure and stress of the stress source of the sample can be analyzed. That is, the structure of the stress source and the initial setting value of the stress can be set, and the first distribution of the stress propagating from the stress source to the surface layer portion or the displacement associated therewith can be obtained, and further according to a predetermined numerical optimization algorithm. It is possible to execute processing for converging the first distribution to the second distribution. If there is a real sample subject to stress analysis, the second distribution may be measured for the surface layer portion of the sample, and even if there is no real sample, if the information of the second distribution actually measured can be obtained, It is possible to analyze the execution of the above process, the structure of the stress source of the sample, and the stress. Information such as the relationship between the thickness of various materials and stress (stress decay rate), sample information for stress analysis, and the second distribution of stress or displacement measured for the surface layer of the sample is stored in the cloud server. It is good also as an aspect which uses the information hold | maintained at the time of predetermined | prescribed arithmetic processing execution.

  According to the technique as described in the second embodiment, it is possible to appropriately analyze the stress inside the sample in a non-destructive manner, as in the first embodiment. By enabling non-destructive stress analysis of the sample, it is possible to avoid wasting the product for stress analysis, and efficient stress analysis without the need for sample processing It becomes possible to do. Since the stress source and stress inside the sample can be analyzed simply by performing the above-described processing, it is possible to shorten the stress analysis period and the product development period.

  The processing function of the stress analysis apparatus 100 according to the first embodiment and the processing function of the stress analysis apparatus 100a according to the second embodiment described above can be realized using a computer.

FIG. 18 is a diagram illustrating a configuration example of computer hardware.
The computer 700 is entirely controlled by the processor 701. The processor 701 is connected to a RAM (Random Access Memory) 702 and a plurality of peripheral devices via a bus 709. The processor 701 may be a multiprocessor. The processor 701 is, for example, a central processing unit (CPU), a micro processing unit (MPU), a digital signal processor (DSP), an application specific integrated circuit (ASIC), or a programmable logic device (PLD). Further, the processor 701 may be a combination of two or more elements among CPU, MPU, DSP, ASIC, and PLD.

  The RAM 702 is used as a main storage device of the computer 700. The RAM 702 temporarily stores at least part of an OS (Operating System) program and application programs to be executed by the processor 701. The RAM 702 stores various data necessary for processing by the processor 701.

  Peripheral devices connected to the bus 709 include an HDD (Hard Disk Drive) 703, a graphic processing device 704, an input interface 705, an optical drive device 706, a device connection interface 707, and a network interface 708.

  The HDD 703 magnetically writes data to and reads data from a built-in disk. The HDD 703 is used as an auxiliary storage device for the computer 700. The HDD 703 stores an OS program, application programs, and various data. A semiconductor storage device such as a flash memory can be used as the auxiliary storage device.

  A monitor 711 is connected to the graphic processing device 704. The graphic processing device 704 displays an image on the screen of the monitor 711 in accordance with an instruction from the processor 701. Examples of the monitor 711 include a display device using a CRT (Cathode Ray Tube) and a liquid crystal display device.

  A keyboard 712 and a mouse 713 are connected to the input interface 705. The input interface 705 transmits a signal transmitted from the keyboard 712 and the mouse 713 to the processor 701. Note that the mouse 713 is an example of a pointing device, and other pointing devices can also be used. Examples of other pointing devices include a touch panel, a tablet, a touch pad, and a trackball.

  The optical drive device 706 reads data recorded on the optical disk 714 using laser light or the like. The optical disk 714 is a portable recording medium on which data is recorded so that it can be read by reflection of light. The optical disk 714 includes a DVD (Digital Versatile Disc), a DVD-RAM, a CD-ROM (Compact Disc Read Only Memory), a CD-R (Recordable) / RW (ReWritable), and the like.

  The device connection interface 707 is a communication interface for connecting peripheral devices to the computer 700. For example, a memory device 715 or a memory reader / writer 716 can be connected to the device connection interface 707. The memory device 715 is a recording medium equipped with a communication function with the device connection interface 707. The memory reader / writer 716 is a device that writes data to the memory card 717 or reads data from the memory card 717. The memory card 717 is a card type recording medium.

  The network interface 708 is connected to the network 710. The network interface 708 transmits and receives data to and from other computers or communication devices via the network 710.

  With the hardware configuration described above, the processing function of the stress analysis apparatus 100 according to the first embodiment and the processing function of the stress analysis apparatus 100a according to the second embodiment can be realized.

  The computer 700 executes, for example, a program recorded in a computer-readable recording medium, thereby processing functions of the stress analysis apparatus 100 according to the first embodiment, and a stress analysis apparatus according to the second embodiment. The processing function of 100a is realized. A program describing the processing contents to be executed by the computer 700 can be recorded in various recording media. For example, a program to be executed by the computer 700 can be stored in the HDD 703. The processor 701 loads at least a part of the program in the HDD 703 into the RAM 702 and executes the program. A program to be executed by the computer 700 can also be recorded on a portable recording medium such as the optical disc 714, the memory device 715, and the memory card 717. The program stored in the portable recording medium becomes executable after being installed in the HDD 703 under the control of the processor 701, for example. The processor 701 can also read and execute a program directly from a portable recording medium.

Regarding the embodiment described above, the following additional notes are further disclosed.
(Supplementary note 1)
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis method comprising generating calculation result information including a structure of the stress source and a set value of stress of the setting information that minimizes a difference between the first distribution and the second distribution.

(Supplementary note 2) The stress analysis method according to supplementary note 1, wherein an initial setting value of the setting information is set based on the second distribution.
(Supplementary note 3) The stress analysis method according to supplementary note 1, wherein an initial set value of the setting information is set based on the sample information.

(Additional remark 4) The said sample information contains the information which shows the material contained in the said sample, The stress analysis method in any one of Additional remark 1 thru | or 3 characterized by the above-mentioned.
(Additional remark 5) The said arithmetic processing includes the process which calculates the said 1st distribution using the relationship between the thickness of the material contained in the area | region of the said surface layer part from the said stress source, and stress. 5. The stress analysis method according to any one of 4 to 4.

(Supplementary note 6) The stress analysis method according to supplementary note 5, wherein the relationship is a relationship in which stress linearly decreases with respect to the thickness of the material in a log-log graph.
(Supplementary Note 7) The setting information includes a set value of the thickness of the material included in the surface layer region from the stress source,
The setting information of the stress source of the setting information that minimizes the difference and the setting value of the stress, and the setting value of the thickness of the material included in the region of the surface layer portion are acquired from the stress source. The stress analysis method according to any one of 1 to 6.

(Additional remark 8) The stress analysis method of Additional remark 7 characterized by the thickness of the material contained in the area | region of the said surface layer part from the said stress source being measured using a sound wave or light.
(Supplementary note 9)
Set a mesh for the sample,
The stress analysis method according to any one of appendices 1 to 8, wherein a stress or displacement within a predetermined mesh range propagating from the stress source to the surface layer portion is displayed by a display unit.

(Supplementary note 10) The stress analysis method according to any one of supplementary notes 1 to 9, wherein the second distribution is measured using light or a cantilever.
(Supplementary Note 11) Including an arithmetic processing unit,
The arithmetic processing unit is
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis apparatus that generates calculation result information including a structure of the stress source of the setting information and a set value of stress that minimize a difference between the first distribution and the second distribution.

(Additional remark 12) The stress analysis apparatus of Additional remark 11 characterized by further including the acquisition part which acquires the said sample information and said 2nd distribution.
(Additional remark 13) The said arithmetic processing includes the process which calculates the said 1st distribution using the relationship between the thickness of the material contained in the area | region of the said surface layer part from the said stress source, and stress. Or the stress analysis apparatus of 12.

(Supplementary Note 14) Further including a display unit,
The arithmetic processing unit sets a mesh for the sample, and when the range of the mesh is designated, displays the stress or displacement in the range transmitted from the stress source to the surface layer by the display unit. The stress analyzer according to any one of appendices 11 to 13, characterized by:

(Supplementary note 15)
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis program for executing a process of generating calculation result information including a structure of the stress source and a set value of stress of the setting information that minimizes a difference between the first distribution and the second distribution .

1, 101, 102, 300 Sample 1a Surface layer 10, 411, 611 First layer 20, 412, 612 Second layer 30, 413, 413a, 413b, 613, 613a, 613b Stress source 30a Stress 100, 100a Stress analyzer 110 calculation processing unit 111 calculation unit 112 comparison unit 113 adjustment unit 114 generation unit 115 setting unit 116 stress attenuation rate DB
DESCRIPTION OF SYMBOLS 120 Input part 130 Memory | storage part 140 Display part 150 Acquisition part 200 Displacement distribution 210 Reference plane 220 Low part 230 High part 310 Silicon substrate 320 Silicide layer 330 Laser light 340 Raman scattered light 400a Two-dimensional model 400b Three-dimensional model 410,610 Sample model 414 element (s)
420, 620 Mesh 500 Measurement device 510 Incident light 520 Emission light 530 Cantilever 540 Sound wave or light 550 Reflected signal 560 Transmitted signal 700 Computer 701 Processor 702 RAM
703 HDD
704 Graphics processing device 705 Input interface 706 Optical drive device 707 Device connection interface 708 Network interface 709 Bus 710 Network 711 Monitor 712 Keyboard 713 Mouse 714 Optical disk 715 Memory device 716 Memory reader / writer 717 Memory card

Claims (8)

Computer
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis method comprising generating calculation result information including a structure of the stress source and a set value of stress of the setting information that minimizes a difference between the first distribution and the second distribution.   2. The calculation process according to claim 1, wherein the calculation process includes a process of calculating the first distribution using a relationship between a thickness and a stress of a material included in the surface layer region from the stress source. Stress analysis method. The setting information includes a setting value of the thickness of the material included in the surface layer region from the stress source,
The structure of the stress source of the setting information that minimizes the difference and the setting value of the stress, and the setting value of the thickness of the material included in the surface layer region are acquired from the stress source. Item 3. The stress analysis method according to Item 1 or 2. The computer is
Set a mesh for the sample,
The stress analysis method according to any one of claims 1 to 3, wherein a stress or displacement within a predetermined mesh range that propagates from the stress source to the surface layer portion is displayed by a display unit. Including an arithmetic processing unit,
The arithmetic processing unit is
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis apparatus that generates calculation result information including a structure of the stress source of the setting information and a set value of stress that minimize a difference between the first distribution and the second distribution.   6. The calculation process according to claim 5, wherein the calculation process includes a process of calculating the first distribution using a relationship between thickness and stress of a material included in the surface layer region from the stress source. Stress analyzer. A display unit;
The arithmetic processing unit sets a mesh for the sample, and when the range of the mesh is designated, displays the stress or displacement in the range transmitted from the stress source to the surface layer by the display unit. The stress analyzer according to claim 5 or 6. On the computer,
Using the sample information about the sample and the setting information including the stress source structure and the stress setting value inside the sample, the stress propagated from the stress source of the setting information to the surface layer portion of the sample or the stress due to the stress A calculation process for calculating a first distribution of displacement of the surface layer portion is executed by adjusting the setting information so that the first distribution converges to a second distribution of stress or displacement measured for the surface layer portion. ,
A stress analysis program for executing a process of generating calculation result information including a structure of the stress source and a set value of stress of the setting information that minimizes a difference between the first distribution and the second distribution .

Images