JP2016194005A - Polishing composition and method for producing polished article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing composition capable of achieving a higher quality surface using colloidal silica derived from an alkali silicate-containing solution.SOLUTION: There is provided a polishing composition which comprises colloidal silica derived from an alkali silicate-containing solution and a film-like substance adhesion inhibitor represented by the following formula (I). [(A-B)CH-SO]M(I) (wherein, A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2 and Mrepresents a monovalent cation.)SELECTED DRAWING: None

Description

  The present invention relates to a polishing composition and a method for producing a polished article.

  Conventionally, a polishing process using a polishing composition is performed on the surface of a material such as a metal, a semimetal, a nonmetal, or an oxide thereof. As the polishing composition, generally used is a composition containing abrasive grains according to the material of the object to be polished and the purpose of polishing. Patent documents 1 and 2 are mentioned as technical literature about a constituent for polish containing an abrasive grain. Patent Document 3 is a technical document relating to a liquid composition for surface treatment for forming irregularities on the surface of an object to be processed.

JP 2001-294848 A JP 2014-205757 A JP 2011-86762 A

  By the way, for example, in polishing a magnetic disk substrate, it is required to finish the surface with a higher quality in order to increase the capacity, and there is a demand for defect suppression at a level that has not been a problem in the past. Therefore, when the surface after polishing by the polishing composition containing colloidal silica derived from the alkali silicate-containing liquid was analyzed in detail, among the defects detected on the surface after polishing, the fine particles attached to the surface It became clear that the thing caused by various film-like substances was included. It has been found that this film-like substance is inevitably contained in the colloidal silica derived from the alkali silicate-containing liquid derived from the raw material of the colloidal silica. Further, it has been found that the constituent material of the film-like substance is a silicate compound that can contain a small amount of alkali metal.

  Unless colloidal silica derived from an alkali silicate-containing liquid (hereinafter also referred to as “silica S”) is used, defects due to adhesion of the film-like substance do not occur. Therefore, it is conceivable to use silica particles obtained by another production method (a production method not using an alkali silicate-containing liquid as a raw material) instead of silica S. However, such silica particles are generally expensive. Further, some silica S have various characteristics (for example, average particle diameter, particle shape, etc.), and some silica particles obtained by other production methods cannot be substituted.

  This invention is made | formed in view of this situation, and it aims at providing the polishing composition which can implement | achieve a higher quality surface using the colloidal silica originating in the alkali silicate containing liquid. . Another object of the present invention is to provide a method for producing a polishing product and a polishing method using the polishing composition. Another related object is to provide a film-like substance adhesion preventing agent for preventing the film-like substance from adhering, a defect reducing method using the film-like substance adhesion preventing agent, and a method for producing a polished article.

According to this specification, the polishing composition containing the colloidal silica originating in the alkali silicate containing liquid and the film-form substance adhesion inhibitor represented by the following general formula (I) is provided.
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
Here, in the above general formula (I), A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation. . According to the polishing composition containing such a film-like substance adhesion preventive agent (hereinafter also referred to as “preventive agent B”), the colloidal silica (silica S) derived from the alkali silicate-containing liquid is used, and the film-like substance adheres. It is possible to realize a high-quality surface in which defects due to material adhesion are suppressed.

The polishing composition which concerns on one preferable aspect contains the compound represented by the following general formula (II) as said film-form substance adhesion prevention agent (inhibitor B).
_{^{[(R 1 -X-CO-}} Y-R 2) n CH 3-n -SO 3] - · M + (II)
Here, the general formula (II), R ¹ represents a hydrocarbon group having 4 to 20 carbon atoms, R ² represents an alkylene group or a chemical bond having 1 to 2 carbon atoms, X represents an oxygen atom or a chemical bond Y represents a —NR ³ — group or a chemical bond, wherein R ³ represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. N is 1 or 2, and M ⁺ represents a monovalent cation. According to such a polishing composition, defects due to adhesion of a film-like substance can be effectively suppressed. Therefore, defect suppression and other characteristics (for example, a polishing rate) can be suitably achieved.

  The polishing composition disclosed herein preferably has a pH of 5 or less. According to such a polishing composition, it is possible to effectively exhibit the polishing action on the object to be polished, and it is possible to efficiently obtain a high-quality surface in which adhesion of a film-like substance is prevented.

  The polishing composition disclosed herein typically contains a film-like substance having a thickness of less than 100 nm. Such a film-like material is particularly difficult to remove from a composition containing silica S with high accuracy. Therefore, in the polishing composition containing such a film-like substance, it is particularly meaningful to apply the technique disclosed herein to prevent the adhesion of the film-like substance.

  The polishing composition disclosed herein is suitable as a polishing composition for polishing a magnetic disk substrate, for example. In the field of magnetic disk substrates, a surface with fewer defects is required for high capacity and high reliability. Therefore, the magnetic disk substrate can be a preferable application target of the technology disclosed herein.

  The polishing composition disclosed here is suitable as a polishing composition for polishing a glass material. As described later, the film-like substance is particularly likely to adhere to a glass material and tends to be difficult to remove. Therefore, it is particularly meaningful to apply the technique disclosed herein to prevent adhesion of the film-like substance. Among glass materials, application to a glass substrate is preferable, and for example, it is suitable for use in polishing a glass substrate such as a magnetic disk glass substrate (glass magnetic disk substrate) or a photomask glass substrate.

  According to this specification, preparing any polishing composition disclosed herein, and supplying the polishing composition to a polishing object to polish the polishing object. The manufacturing method of the abrasive | polishing thing which includes is provided. According to this production method, it is possible to produce an abrasive having a high-quality surface that enjoys the advantages of the use of silica S and is highly suppressed in defects due to adhesion of film-like substances.

  According to this specification, there is also provided a polishing method including polishing an object to be polished using any of the polishing compositions disclosed herein. According to this polishing method, it is possible to realize a high-quality surface in which the advantages of using silica S are enjoyed and defects due to adhesion of the film-like substance are highly suppressed.

According to this specification, there is also provided a method for reducing defects existing on the surface after polishing in polishing using a polishing composition containing silica S. The defect reducing method includes causing the polishing composition containing the silica S to contain the inhibitor B represented by the following general formula (I), and polishing the object to be polished using the polishing composition.
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
Here, in the above general formula (I), A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation. . According to this defect reduction method, the defects present on the polished surface can be significantly reduced by the effect of the inhibitor B.

According to this specification, the film-form substance adhesion prevention agent (inhibitor B) which prevents adhesion of the film-form substance contained in the colloidal silica derived from the alkali silicate-containing liquid to the object to be polished is provided. The inhibitor B contains a compound represented by the following general formula (I).
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
Here, in the above general formula (I), A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation. . According to the inhibitor B, it is possible to obtain a polished product with reduced defects caused by the adhesion of the film-like substance.

  According to this specification, the step (1) of polishing an object to be polished with a polishing composition containing silica S and a surface treatment liquid containing a film-form substance adhesion inhibitor represented by the general formula (I) There is provided a method for producing a polished article, which comprises the step (2) of surface-treating the polishing object in this order. According to this manufacturing method, it is possible to obtain an abrasive with reduced defects caused by the adhesion of the film-like substance.

It is a SEM image which shows a film-form substance.

  Hereinafter, preferred embodiments of the present invention will be described. Note that matters other than matters specifically mentioned in the present specification and necessary for the implementation of the present invention can be grasped as design matters of those skilled in the art based on the prior art in this field. The present invention can be carried out based on the contents disclosed in this specification and common technical knowledge in the field.

<Polishing composition SB>
The polishing composition disclosed herein contains colloidal silica (silica S) derived from an alkali silicate-containing liquid and a film-form substance adhesion inhibitor (inhibitor B) represented by the above general formula (I). It is characterized by that. Hereinafter, the polishing composition containing silica S and inhibitor B may be referred to as “polishing composition SB”.

  Here, “colloidal silica derived from an alkali silicate-containing liquid” refers to colloidal silica produced using an alkali silicate-containing liquid (for example, sodium silicate-containing liquid starting from silica sand) as a raw material. In general, colloidal silica (silica S) produced by such a method inevitably contains a film-like substance derived from the raw material. Therefore, unless the intentional and appropriate treatment for excluding the film-like substance is performed with high accuracy, the film-like substance is inevitably contained in the polishing composition containing silica S. That is, the polishing composition disclosed herein typically contains a film-like substance together with silica S. Moreover, when the polishing composition disclosed here contains a film-like substance, it can be estimated from the fact that the polishing composition contains silica S.

In the technology disclosed herein, whether or not the composition contains a film-like substance can be evaluated by the following method. That is, a dispersion liquid sample containing the composition to be evaluated is filtered through a membrane filter having a pore diameter of 0.2 μm. At this time, the amount of the dispersion sample to be filtered by the membrane filter is set to 30 mg on the basis of the solid content per 1 cm ² of the filtration area of the membrane filter. If the dispersion sample cannot be passed through a membrane filter with a pore size of 0.2 μm, before filtering the dispersion sample with a membrane filter with a pore size of 3 times or more (that is, a membrane filter with a pore size of 0.6 μm or more) in advance. Processing can be performed. As the membrane filter having a pore diameter of 0.2 μm, for example, a polycarbonate membrane filter (trade name “K020A-047A” manufactured by ADVANTEC) can be used.
The dispersion sample is filtered through a membrane filter having a pore size of 0.2 μm, and the residue on the membrane filter is observed with a scanning electron microscope (SEM). Observation is performed on a randomly selected 12.7 μm × 9.5 μm × 100 field of view. If it is difficult to distinguish, zoom and check as necessary. And when presence of a film-form substance is recognized in those visual fields, it evaluates that the said composition contains a film-form substance. When the film-like substance is not present in the 100 fields of view, it is evaluated that the composition does not substantially contain the film-like substance.

  In addition, in the technique disclosed here, the object to be evaluated as to whether or not it contains a film-like substance by the above-mentioned method is not limited to the polishing composition, but is also the production of polished articles such as cleaning liquid, surface treatment liquid, rinse liquid, etc. Any composition that can be used in the process can also be included. In addition, materials that can be used as raw materials used in the production of such a composition, such as an aqueous dispersion of colloidal silica derived from an alkali silicate-containing liquid, can also be evaluated by the above method.

(Film-like substance)
For example, as shown in FIG. 1, the film-like substance is a minute film (in other words, a thin piece or a thin film) typically having a rectangular shape (specifically, a rectangular shape). This film-like material, often is present in rectangular form, usually, the thickness L _T is approximately less than 100 nm (typically about 50nm or less). Usually, the long side length L _L of the film-like substance is about 0.5 μm or more, and the short side length L _S is about 0.1 μm or more. Therefore, depending on the ratio of the long side to the short side, the shape of the film-like substance can be expressed as a strip shape, a strip shape, or the like.

  When the polishing composition containing such a film-like substance is supplied to the object to be polished, the surface of the object to be polished and the surface of the film-like substance can be in surface contact. At this time, when the surface of the object to be polished and the surface of the film-like substance are in close contact with each other, a state in which the film-like substance continuously remains at a specific position on the object to be polished, that is, adhesion (fixation) of the film-like substance occurs. The film-like substance adhering to the surface of the object to be polished by such surface contact has a thin and flat shape, and the alkali cleaning liquid or the like can be obtained by a general method such as scrubbing or applying ultrasonic waves. Even if it is washed with water, it remains on the surface of the object to be polished, and as a result, it may cause convex defects. Further, for example, even if the conditions of chemical cleaning are made stricter and the film-like substance on the surface of the polishing object is removed, the film-like substance adheres to the portion of the polishing object to which the film-like substance has adhered. Since the amount of surface removal by chemical cleaning is smaller than that of the portion that has not been adhered (non-attached portion), it can still cause convex defects. One of the main problems to be solved by the technology disclosed herein is to suppress convex defects (typically, convex defects having a generally flat shape (table shape, etc.)) caused by such a film-like substance. is there.

The major axis L _L of the film-like substance is usually 0.5 μm or more. Therefore, a typical shape of the film-like substance mentioned here includes a shape having a thickness of less than 100 nm and a major axis L _L of 0.5 μm or more. The major axis L _L of the film-like substance is typically about 0.7 μm or more, and can be, for example, about 1 μm or more. A film-like substance having a longer diameter L _L (length) that is greater than or equal to a predetermined size tends to have a strong adhesive force because it has a large area that can contact the surface of the object to be polished. Therefore, the application effect of the technique disclosed here can be exhibited better. The upper limit of the long diameter L _L is not particularly limited, but is usually 5 μm or less, and typically 3 μm or less. When the long diameter L _L is reduced, it becomes increasingly difficult to accurately remove the film-like substance from the polishing composition containing the silica S, and therefore, the significance of application of the technique disclosed herein is increased. The technique disclosed here allows a polishing composition to contain a film-like substance and can effectively prevent adhesion of the film-like substance, so that a film having a major axis L _L of a predetermined value or less. The present invention can also be preferably applied to a particulate material.

Minor _{L S} of the film-like material is generally 0.1μm or more, typically at about 0.2μm or more, can be, for example, approximately 0.3μm or more. A film-like substance having a short diameter L _S (width) greater than or equal to a predetermined value tends to have a strong adhesive force because it has a large area that can contact the surface of the object to be polished. Therefore, the application effect of the technology disclosed herein can be suitably exhibited. The upper limit of the minor axis L _S is not particularly limited, usually at 1.5μm, typically at 1μm or less. As the minor diameter L _S becomes smaller, it becomes more difficult to accurately remove the film-like substance from the polishing composition containing the silica S, and therefore, the significance of application of the technique disclosed herein increases. The technology disclosed herein allows the polishing composition to contain a film-like substance and can effectively prevent adhesion of the film-like substance, so that the short diameter L _S is not more than a predetermined value. It can be preferably applied to a film-like substance.

Incidentally, the major axis L _L, when the film-like material has a rectangular shape and its longer side. Since the film-like substance does not necessarily have a rectangular shape, in such a case, the longest diameter may be set to the long diameter L _L for convenience. The short diameter L _S is the short side when the film-like substance has a rectangular shape. In the film-like materials other than rectangular, the longest distance across the length in the direction perpendicular to the major axis L _L may be the minor axis L _S.

The thickness _{L T} of the film-like material, typically 50nm or less, for example, at approximately 30nm or less, typically is approximately 20nm or less. If the thickness L _T of the film-like material is reduced, since the film-like material from the polishing composition containing silica S be accurately removed becomes increasingly difficult, to apply the significance of the art disclosed herein increases . The art disclosed herein, the polishing composition SB may be suitably implemented in a manner that includes a film-like material having the thickness L _T. The lower limit of the thickness L _T is not particularly limited, but usually about 3nm or more, for example 5nm or more.

Although not particularly limited, the ratio of the major axis L _L to the thickness L _T of the film-like substance (L _L / L _T ) is greater than about 10 and 15 or more (eg, 50 or more, typically 100 or more). It is preferable that Since the film-like substance satisfying the above ratio (L _L / L _T ) is thin and has a large area, it tends to have a strong adhesion to the object to be studied. Therefore, in the polishing composition containing such a film-like substance and polishing using the composition, it is particularly significant to apply the technique disclosed herein.

  It has been found that the film-like substance is produced at least in the production of colloidal silica using at least an alkali silicate-containing liquid (for example, sodium silicate-containing liquid) as a raw material. Therefore, the film-like substance is a component that can be inevitably contained in at least a composition containing colloidal silica obtained by the production method.

(Silica S)
Polishing composition SB disclosed here contains colloidal silica (silica S) derived from an alkali silicate-containing liquid. The polishing composition SB may contain one type of silica S alone, or may contain two or more types (for example, two or more types having different particle diameters, particle shapes, etc.) in combination. Good.

  The polishing composition SB typically contains silica S as abrasive grains. Here, “including as abrasive grains” means being included in a manner capable of exerting a polishing action on an object to be polished. The abrasive grains in the polishing composition SB may be substantially composed of silica S, or may be composed of a combination of silica S and other abrasive grains. Here, that the abrasive grains are substantially composed of silica S means that 95 wt% or more (typically 98 wt% or more) of the abrasive grains is composed of silica S. The same applies to other types of abrasive grains.

  Polishing composition SB disclosed here is not limited to the one containing silica S as abrasive grains. In other words, the polishing composition SB disclosed herein may contain silica S for purposes other than abrasive grains, and silica S as abrasive grains and silica S contained for purposes other than abrasive grains. And both of them may be included. This is because the composition containing silica S can contain both of the above film-like substances regardless of the function or purpose of use of silica S. According to the technology disclosed herein, defects caused by the film-like substance (for example, convex defects due to adhesion of the film-like substance) can be suppressed regardless of the function and intended purpose of the silica S.

  Hereinafter, although the aspect which mainly utilizes the silica S as an abrasive grain is mainly demonstrated, the technical thought disclosed by this specification is not limited to this aspect.

  The silica S contained in the polishing composition SB disclosed herein may be in the form of primary particles or may be in the form of secondary particles in which a plurality of primary particles are aggregated. Further, silica S in the form of primary particles and those in the form of secondary particles may be mixed.

  The particle shape of silica S is not particularly limited, and may be, for example, spherical or non-spherical. Specific examples of the non-spherical shape include a peanut shape (that is, a shape of peanut shell), a cocoon shape, a shape with a protrusion (for example, a confetti shape), a rugby ball shape, and the like. From the viewpoint of reducing the surface roughness, silica S having a nearly spherical shape can be preferably used.

  The average primary particle diameter D1 of the silica S is not particularly limited, but is preferably 5 nm or more, more preferably 8 nm or more, further preferably 10 nm or more, for example, 12 nm or more from the viewpoint of polishing efficiency. Moreover, from the viewpoint that a smoother surface can be easily obtained, D1 is preferably 100 nm or less, more preferably 80 nm or less, and even more preferably 50 nm or less. The technique disclosed herein is also preferable in an embodiment using silica S having D1 of 30 nm or less (more preferably 25 nm or less, more preferably less than 25 nm, for example, less than 20 nm) from the viewpoint of easily obtaining a higher quality surface. Can be implemented.

In the technology disclosed herein, the average primary particle diameter D1 of silica S and other particles refers to the average particle diameter based on the BET method. The average primary particle diameter D1 can be calculated from the specific surface area S (m ² / g) measured by the BET method according to the formula D1 (nm) = 2727 / S. The specific surface area can be measured using, for example, a surface area measuring device manufactured by Micromeritex Corporation, a trade name “Flow Sorb II 2300”.

  The average secondary particle diameter D2 of the silica S is not particularly limited, but is preferably 5 nm or more, more preferably 8 nm or more, further preferably 10 nm or more, for example, 12 nm or more from the viewpoint of the polishing rate or the like. Further, from the viewpoint of obtaining a surface with higher smoothness, D2 is suitably 200 nm or less, preferably 150 nm or less, more preferably 100 nm or less, and even more preferably 80 nm or less. The technique disclosed herein is also preferable in an embodiment using silica S having D2 of 50 nm or less (more preferably 30 nm or less, more preferably less than 25 nm, for example, less than 20 nm) from the viewpoint of easily obtaining a higher quality surface. Can be implemented.

  In the technology disclosed herein, the average secondary particle diameter D2 of silica S and other particles is, for example, model “UPA-UT151” manufactured by Nikkiso Co., Ltd., using an aqueous dispersion of the measurement object as a measurement sample. It can be measured by the dynamic light scattering method used.

  D2 of silica S is generally equal to or greater than D1 (D2 / D1 ≧ 1) and is typically larger than D1 (D2 / D1> 1). Although not particularly limited, in view of the polishing effect and the surface smoothness after polishing, D2 / D1 of silica S is usually suitably in the range of 1.0 to 3.0. The range of 0-2.5 is preferable and the range of 1.0-2.3 is more preferable. From the viewpoint of obtaining higher surface smoothness, silica S having D2 / D1 of 1.0 to 2.0 (more preferably 1.0 to 1.5, for example 1.0 to 1.4) is preferably used. obtain. In addition, D2 / D1 of the silica S used in the Example mentioned later is 1.1-1.4 in all.

  Although not particularly limited, the average value (average aspect ratio) of the major axis / minor axis ratio of silica S is preferably 1.01 or more, and more preferably 1.05 or more (for example, 1.1 or more). By increasing the average aspect ratio, a higher polishing rate can be achieved. The average aspect ratio of the silica S is preferably 3.0 or less, more preferably 2.0 or less, and still more preferably 1.5 or less, from the viewpoint of reducing the surface roughness. The polishing composition disclosed herein contains silica S having an average aspect ratio of less than 1.25 (eg, 1.20 or less, typically less than 1.15) by including a film-like substance adhesion inhibitor. Even in the mode of use, convex defects due to adhesion of the film-like substance can be effectively reduced. Therefore, according to this aspect, it is possible to achieve both a reduction in surface roughness and a reduction in the convex defects at a high level.

  The shape (outer shape) and average aspect ratio of the silica S can be grasped by, for example, observation with an electron microscope. As a specific procedure for grasping the average aspect ratio, for example, using a SEM, a predetermined number (for example, 200) of abrasive particles capable of recognizing the shape of independent particles is the smallest that circumscribes each particle image. Draw a rectangle. For the rectangle drawn for each particle image, the value obtained by dividing the length of the long side (major axis value) by the length of the short side (minor axis value) is the major axis / minor axis ratio (aspect ratio). ). An average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the predetermined number of particles.

  The density of the silica S is preferably 1.5 or more, more preferably 1.6 or more, and even more preferably 1.7 or more. By increasing the density of silica, the polishing rate can be improved when polishing an object to be polished. From the viewpoint of reducing scratches generated on the surface of the object to be polished (surface to be polished), silica particles having a density of 2.3 or less are preferable. As the density of the abrasive grains (typically silica), a value measured by a liquid replacement method using ethanol as a replacement liquid may be employed.

  Silica S in the technology disclosed herein is manufactured using an alkali silicate-containing liquid as a raw material as described above. Such a composition containing silica S (for example, any polishing composition disclosed herein) may contain an alkali metal derived from a raw material (for example, an alkali metal such as Na, K, Li, etc.). A composition comprising silica S may typically comprise Na.

(solvent)
Polishing composition SB disclosed here typically contains water as a solvent in which silica S is dispersed (hereinafter, used in the meaning of a medium including a solvent and a dispersion medium). As water, ion exchange water (deionized water), pure water, ultrapure water, distilled water and the like can be preferably used.

  Polishing composition SB disclosed here may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary. Usually, it is preferable that 90 volume% or more of the solvent contained in polishing composition is water, and it is more preferable that 95 volume% or more (typically 99-100 volume%) is water.

(Film-like substance adhesion inhibitor)
The film-like substance adhesion inhibitor (inhibitor B) in the technology disclosed herein is represented by the following general formula (I).
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)

  N in the general formula (I) is 1 or 2. When n is 2, two A and two B included in the general formula (I) may be the same or different.

  A in the general formula (I) is a hydrophobic group, for example, a hydrocarbon group, a hydrocarbon group containing etheric oxygen, or a structure in which part or all of the hydrogen atoms in these groups are replaced by substituents. Or the like. Examples of the substituent include halogen atoms such as F, Cl, Br, and cyano groups. In one preferred embodiment, A is an optionally substituted alkyl group, alkenyl group, alkadienyl group, alkatrienyl group, alkynyl group, cycloalkyl group, bicycloalkyl group, tricycloalkyl group, cycloalkenyl group, cyclo It can be selected from the group consisting of alkadienyl groups, aryl groups, aralkyl groups, alkoxy groups and alkoxyalkyl groups. The substituent in this case can be selected from the group consisting of F, Cl, Br etc. and a cyano group.

B in the general formula (I) is a structural part that links (bridges) SO ₃ and the hydrophobic group A via CH _3-n, and has a carbonyl group (C═O group). Is an organic group. The carbonyl group can be, for example, a carbonyl group constituting an ester structure, a carbonate structure, a ketone structure, an aldehyde structure, an acid anhydride structure, or an amide structure. Preferable examples of these include carbonyl groups constituting ester structures or amide structures. The number of carbonyl groups contained in B may be 1 or 2 or more (typically 2 to 5, for example, 2 to 3). In a preferred embodiment, the number of carbonyl groups contained in B is 1.

M ⁺ is a monovalent cation, for example, an alkali metal cation such as Na, K, Li, Rb, Cs; ammonium (NH ₄ ⁺ ); tetraalkylammonium (tetramethylammonium, tetrabutylammonium, etc.), Organic ammonium such as trialkanol ammonium (such as triethanolammonium); organic phosphonium such as tetraalkylphosphonium ion; proton; Preferable examples of M ⁺ in the technology disclosed herein include Na ⁺ , K ⁺ , ammonium, and organic ammonium having 20 or less (preferably 16 or less, for example, 4 to 16) carbon atoms. Of these, Na ⁺ is preferable.

  Although not particularly limited, the reason why the compound represented by the general formula (I) can contribute to prevention of adhesion of the film-like substance is considered as follows, for example. That is, the anion component of the compound represented by the general formula (I) has a carbonyl group between the hydrophobic group A and the sulfonyl group. While this carbonyl group has an appropriate affinity for a film-like substance, dispersibility in water is imparted by the sulfonyl group, and further, the hydrophobic group A causes aggregation of the compounds and adsorption to the object to be polished. By being suitably suppressed, it is considered that the film-like substance is effectively prevented from adhering to the object to be polished.

  The total number of carbon atoms contained in A (that is, the number of carbon atoms in A) is not particularly limited, but is usually 30 or less (typically 3 to 30). When the carbon number of A increases, the performance of preventing adhesion of a film-like substance tends to be improved. On the other hand, when A has too many carbon atoms, the solubility or dispersibility of the compound in water tends to be insufficient, and the performance of preventing the adhesion of a film-like substance may be difficult to be exhibited. From this viewpoint, the number of carbon atoms of A is more preferably 4-24, and even more preferably 6-20.

  The carbon number of B (which shall be counted including the carbonyl carbon) is not particularly limited, but is usually 24 or less (typically 1 to 24), and 10 or less (typically 1 to 10). ) Is preferable, and 6 or less (typically 1 to 6) is more preferable. The total number of carbon atoms of A and B is not particularly limited, but is usually 40 or less, preferably 34 or less, more preferably 30 or less, from the viewpoint of solubility or dispersibility in water. Further, from the viewpoint of better exhibiting the performance of preventing the adhesion of the film-like substance, the total carbon number of A and B is usually 4 or more, and preferably 6 or more. When B contains a carbon atom other than the carbonyl carbon, the carbon atom preferably constitutes an alkyl group or an alkenyl group.

Preferable examples of the inhibitor B represented by the general formula (I) include compounds represented by the following general formula (II).
_{^{[(R 1 -X-CO-}} Y-R 2) n CH 3-n -SO 3] - · M + (II)

N in the general formula (II) is 1 or 2. When n is 2, two R ¹ , R ² , X and Y included in the general formula (II) may be the same or different. M ⁺ in the general formula (II) represents a monovalent cation. Since M ⁺ is the same as in the general formula (I), it will not be repeated here.

R ¹ in the general formula (II) may be a hydrocarbon group having 4 to 20 carbon atoms (preferably 6 to 20 carbon atoms). Examples of the hydrocarbon group include alkyl group, alkenyl group, alkadienyl group, alkatrienyl group, alkynyl group, cycloalkyl group, bicycloalkyl group, tricycloalkyl group, cycloalkenyl group, cycloalkadienyl group, aryl Groups and aralkyl groups are included. In a preferred embodiment, R ¹ can be a saturated or unsaturated aliphatic hydrocarbon group, specifically an alkyl group, an alkenyl group, an alkadienyl group or an alkatrienyl group. Each of these groups may be linear or may have a branch.

X in the general formula (II) may be an oxygen atom or a chemical bond. Y in general formula (II) may be a —NR ³ — group or a chemical bond. Here, R ³ represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. The alkyl group having 1 to 3 carbon atoms may be a methyl group, an ethyl group, or a propyl group. The propyl group may be an n-propyl group or an isopropyl group. R ² in the general formula (II) may be an alkylene group having 1 to 2 carbon atoms or a chemical bond. That is, R ² can be a methylene group (—CH ₂ —), an ethylene group (—CH ₂ CH ₂ —), or a chemical bond.

In the inhibitor B according to a preferred embodiment, n in the general formula (II) is 1 and R ¹ is an alkyl group having 4 to 20 carbon atoms, an alkenyl group having 6 to 20 carbon atoms, or an alkadienyl having 8 to 20 carbon atoms. A group, X is a chemical bond, Y is a —NR ³ — group (R ³ is an alkyl group having 1 to ³ carbon atoms, such as a methyl group), and R ² is an alkylene group having 1 to ² carbon atoms ( For example, a compound that is —CH ₂ —). R ¹ may be linear or branched and is typically linear. More preferable R ¹ includes an alkyl group having 6 to 20 carbon atoms, an alkenyl group having 8 to 20 carbon atoms, an alkadienyl group having 10 to 20 carbon atoms, and an alkatrienyl group having 12 to 20 carbon atoms. For example, a compound in which R ¹ is an alkyl group having 8 to 18 carbon atoms, an alkenyl group having 10 to 18 carbon atoms, an alkadienyl group having 12 to 18 carbon atoms, or an alkatrienyl group having 14 to 18 carbon atoms is preferable. In the inhibitor B according to a preferred embodiment, X is a chemical bond, and R ¹ —CO— is a coconut oil (coconut oil) fatty acid residue or a palm oil fatty acid residue. Especially, the film-form substance adhesion preventing agent whose R < ¹ > -CO- is a coconut oil fatty acid residue is preferable. The inhibitor B is typically a mixture of R ¹ consists of an alkyl group, a compound selected from alkenyl and alkadienyl group having 8 to 18 carbon atoms, are typically R ¹ is n- lauryl group A compound (that is, a compound in which R ¹ —CO— is a lauric acid residue) is most often contained.

The inhibitor B according to another preferred embodiment is that n in the general formula (II) is 2, R ¹ is an alkyl group having 4 to 18 carbon atoms or an alkenyl group having 6 to 18 carbon atoms, and X is oxygen A compound that is an atom, Y is a chemical bond, and R ² is a methylene group (—CH ₂ —) or a chemical bond. For example, it is preferable that one of the two R ² contained in the general formula (II) is a methylene group and the other is a chemical bond. R ¹ is more preferably an alkyl group having 4 to 16 carbon atoms, and further preferably an alkyl group having 6 to 12 carbon atoms. Preferable examples of R ¹ include n-hexyl group, n-octyl group and 2-ethylhexyl group. Of these, n-octyl group and 2-ethylhexyl group are preferable. Two R ^{1 s} contained in the general formula (II) are preferably the same group.

  The inhibitor B in the technique disclosed herein may be any one of the above-described compounds, or may be a mixture of two or more.

  The content of the inhibitor B in the polishing composition SB disclosed herein (the total amount thereof when a plurality of types of the inhibitor B is contained) is not particularly limited, and depends on the purpose of use, the mode of use, and the like. It can set suitably so that a desired effect may be acquired. In a preferred embodiment, the content of the inhibitor B in the polishing composition can be, for example, 0.001 mmol / L or more, and is usually 0.01 mmol from the viewpoint of better exhibiting the effect of preventing the adhesion of the film-like substance. / L or more is suitable, 0.1 mmol / L or more is preferable, and 0.3 mmol / L or more (for example, 0.5 mmol / L or more) is more preferable. In addition, the content of the inhibitor B in the polishing composition can be, for example, 100 mmol / L or less, and is usually 10 mmol / L or less from the viewpoint of polishing efficiency and the like, and is 5 mmol / L or less. Is preferable, and 3 mmol / L or less is more preferable.

  Although it does not specifically limit, content of the inhibitor B with respect to 100 g of silica S can be 0.01 mmol or more, for example, from a viewpoint of exhibiting the adhesion prevention effect of a film-form substance normally 0. 05 mmol or more is suitable, 0.1 mmol or more is preferable, and 0.3 mmol or more is more preferable. Further, the content of the inhibitor B with respect to 100 g of silica S can be, for example, 10 mmol or less, and usually 5 mmol or less is preferable from the viewpoint of polishing efficiency and the like, and 3 mmol or less is preferable. For example, the inhibitor B disclosed herein can exert a good film-like substance adhesion preventing effect even in an embodiment in which the content relative to 100 g of silica S is 1 mmol or less.

(Abrasive grains other than silica S)
Polishing composition SB disclosed here may contain abrasive grains other than silica S. The material and properties of the abrasive grains other than silica S are not particularly limited, and can be appropriately selected according to the purpose of use and usage of the polishing composition. As abrasive grains other than silica S, any of inorganic particles, organic particles, and organic-inorganic composite particles can be used. Specific examples of inorganic particles include silica particles, alumina particles, ceria particles, titania particles, zirconia particles, chromium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, oxide particles such as bengara particles; silicon nitride particles And nitride particles such as boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate; Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles and poly (meth) acrylic acid particles (here, (meth) acrylic acid is a generic term for acrylic acid and methacrylic acid). And polyacrylonitrile particles. Abrasive grains other than silica S may be used singly or in combination of two or more.

  As abrasive grains other than silica S, inorganic particles are preferable, and particles made of metal or metalloid oxides are particularly preferable. The abrasive grains may be silica particles. Examples of silica particles other than silica S (that is, silica particles other than colloidal silica derived from an alkali silicate-containing liquid; hereinafter also referred to as “silica NS”) include those other than the method using an alkali silicate-containing liquid as a raw material. Examples thereof include colloidal silica produced by the method (for example, alkoxide colloidal silica), dry silica (for example, fumed silica), and the like.

  Although not particularly limited, as the abrasive grains other than silica S, those satisfying one or more of preferable average primary particle diameter D1, average secondary particle diameter D2 and D2 / D1 in silica S described above are preferably employed. Can do.

  Although not particularly limited, the proportion of silica S in the abrasive grains contained in the polishing composition SB disclosed herein is typically 50% by weight or more, preferably 75% by weight or more, more preferably It is 90% by weight or more, more preferably 95% by weight or more. The technique disclosed here can be preferably implemented in an aspect in which the abrasive grains are substantially composed of silica S. In addition, as long as a film-like substance can be contained regardless of the content of silica S, the application effect of the technique disclosed herein can be exhibited. Therefore, in the technique disclosed herein, the proportion of silica S in the abrasive grains contained in the polishing composition is less than 50% by weight, for example, 25% by weight or less, or 10% by weight or less, and further 5% by weight or less. Certain embodiments can also be preferably implemented.

(PH)
The pH of polishing composition SB is not particularly limited. The pH of the polishing composition SB can be, for example, pH 12.0 or less (typically pH 1.0 to 12.0), and pH 10.0 or less (typically pH 1.0 to 10.0). ). In a preferred embodiment, the polishing composition SB may have a pH of 7.0 or less (for example, pH 1.0 to 7.0), and a pH of 6.0 or less (typically pH 1.2 to 6.0). For example, it is more preferable to set it as pH1.2-5.5), and it is further more preferable to set it as pH5.0 or less (for example, pH1.5-5.0). The pH of the polishing composition SB is, for example, pH 4.5 or less (typically pH 2.0 to 4.5, preferably pH 2.5 to 4.3, more preferably pH 2.5 to 4.0). be able to. The pH can be preferably applied to a polishing liquid (for example, a polishing liquid for polishing) used for polishing a glass material such as a glass magnetic disk substrate. In the polishing of the glass material, in order to obtain a more smooth surface, the pH of the polishing composition SB exceeds pH 2.5 (typically, the range where the pH is greater than 2.5 and less than or equal to 4.3, For example, a pH range of 2.5 to 3.8 can be preferably employed. For the adjustment of pH, a pH adjusting agent described later can be used as necessary.

(Other ingredients)
The polishing composition SB disclosed herein is a pH adjuster such as an acid or an alkali agent, an oxidizing agent, a chelating agent, a surfactant, a water-soluble polymer, an antibacterial agent, as long as the effects of the present invention are not significantly disturbed. You may further contain the well-known additive which can be used for polishing compositions (for example, polishing composition for magnetic disk substrates), such as a rust agent, antiseptic | preservative, and an antifungal agent, as needed. The technique disclosed here may also be implemented in a manner in which the polishing composition SB does not substantially contain additives such as an oxidizing agent, a water-soluble polymer, a surfactant, and a chelating agent. Polishing composition SB having such a composition is suitable as a polishing composition used for polishing glass materials (glass magnetic disk substrates and the like), for example. Polishing composition SB disclosed here may be substantially composed of, for example, silica S and a film-like substance that can be unavoidably contained, a solvent, an inhibitor B, and a pH adjuster.

  Examples of the acid that can be contained in the polishing composition SB include carbonic acid, hydrochloric acid, nitric acid, phosphoric acid, hypophosphorous acid, phosphorous acid, phosphonic acid, sulfuric acid, boric acid, hydrofluoric acid, orthophosphoric acid, pyrroline. Inorganic acids such as acid, polyphosphoric acid, metaphosphoric acid, and hexametaphosphoric acid; organic acids such as organic carboxylic acid, organic phosphonic acid, and organic sulfonic acid; but are not limited thereto. As an organic acid, a C1-C18 thing is preferable and a C1-C10 thing is more preferable. Specific examples of organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, caprylic acid, pelargonic acid, capric acid, lauric acid, myristic acid, palmitic acid, margaric acid, stearic acid, Saturated carboxylic acids such as nicotinic acid; unsaturated carboxylic acids such as crotonic acid, oleic acid, linoleic acid, linolenic acid, ricinolenic acid; oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, Saturated and unsaturated dicarboxylic acids such as itaconic acid and iminodiacetic acid; hydroxycarboxylic acids such as glycolic acid, lactic acid, malic acid, citric acid, tartaric acid, gluconic acid and mandelic acid; methanesulfonic acid, ethanesulfonic acid and benzene Sulfonic acid, p-toluenesulfonic acid, 10-camphorsulfonic acid, isethion , Acid taurine; methyl acid phosphate, ethyl acid phosphate, ethyl glycol acid phosphate, isopropyl acid phosphate, phytic acid, phosphonic acids such as 1-hydroxyethylidene-1,1-diphosphonic acid; and the like. Preferred acids from the viewpoint of polishing efficiency include inorganic acids such as sulfuric acid and phosphoric acid. By using a carboxylic acid such as maleic acid or citric acid (for example, a polyvalent carboxylic acid having 2 or 3 or more carboxy groups), the effect of the inhibitor B tends to be exhibited better. By using organic acids such as maleic acid, citric acid, and isethionic acid, higher smoothness tends to be realized. Further, for example, in a polishing composition used for polishing glass materials, an acid having a low oxidizing power (for example, an acid having a standard oxidation-reduction potential of 0.5 V or less with respect to a standard hydrogen electrode, specifically sulfuric acid, citric acid, etc.) Can be preferably employed. The acid may be used in the form of a salt with the acid. There is no restriction | limiting in particular as an acid salt, For example, a salt with a suitable metal, ammonium, etc. is mentioned. An acid and its salt can be used individually by 1 type or in combination of 2 or more types.

  In the embodiment containing an acid, the content of the acid in the polishing composition SB (in the embodiment containing a plurality of acids, the total content thereof) can be appropriately set so as to obtain a desired pH. Although not particularly limited, the acid content can be, for example, 0.1 g / L or more, and is preferably 0.5 g / L or more, more preferably 1 g / L or more from the viewpoint of the polishing rate or the like. More preferably, it is 5 g / L or more. In addition, from the viewpoint of storage stability of the polishing composition SB, the content is appropriately 70 g / L or less, preferably 50 g / L or less, for example 30 g / L or less.

  Examples of the alkali agent include alkali metal salts (including hydroxide salts; the same shall apply hereinafter), alkaline earth metal salts, and ammonium salts. Preferable examples include potassium hydroxide, potassium carbonate, potassium bicarbonate, sodium carbonate, ammonium carbonate, potassium phosphate, potassium hydrogen phosphate, sodium phosphate, sodium hydrogen phosphate, ammonium hydrogen phosphate, potassium citrate, Potassium oxalate, ammonium hydrogen oxalate, potassium tartrate, sodium potassium tartrate, ammonium tartrate, ammonium hydrogen tartrate, potassium bromate, potassium sorbate, potassium chlorate, potassium perchlorate, calcium nitrate, potassium gluconate, potassium succinate, Potassium fluoride, calcium fluoride, ammonium fluoride, potassium periodate, potassium ferricyanide, ammonium acetate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutyl hydroxide Ammonium and the like. Of these, potassium hydroxide, potassium carbonate, potassium bicarbonate, sodium carbonate, ammonium carbonate, potassium phosphate, potassium hydrogen phosphate, sodium phosphate, sodium hydrogen phosphate, and ammonium hydrogen phosphate are more preferable. Such an alkali agent can be used individually by 1 type or in combination of 2 or more types.

  In the embodiment including an alkali agent, the content of the alkali agent (in the embodiment including a plurality of alkali agents, the total content thereof) can be appropriately set so as to obtain a desired pH. Although it does not specifically limit, content of an alkaline agent can be 0.1 g / L or more, for example. The content is preferably 0.5 g / L or more, more preferably 1 g / L or more, and further preferably 5 g / L or more from the viewpoint of the polishing rate or the like. In addition, from the viewpoint of storage stability of the polishing composition, the content is suitably 70 g / L or less, preferably 50 g / L or less, for example 30 g / L or less.

  In a preferred embodiment, the above-described acid and alkali agent can be used in combination so that the pH buffering action can be exerted. Although not particularly limited, as such a buffer system, for example, a combination of a weak acid such as citric acid and sodium citrate and its strong base salt, a strong acid such as sulfuric acid and ammonium sulfate, and its weak base salt, A combination of these can be used.

  Examples of the oxidizing agent include, but are not limited to, peroxide, nitric acid or a salt thereof, peroxo acid or a salt thereof, permanganic acid or a salt thereof, chromic acid or a salt thereof, and the like. Such oxidizing agents may be used alone or in appropriate combination of two or more. Specific examples of the oxidizing agent include hydrogen peroxide, nitric acid, iron nitrate, aluminum nitrate, peroxodisulfuric acid, periodic acid, bromic acid, perchloric acid, hypochlorous acid, persulfuric acid, and salts thereof (for example, sodium salt) , Potassium salt, ammonium salt) and the like. Preferable oxidizing agents include hydrogen peroxide, iron nitrate, peroxodisulfuric acid and nitric acid. Such an oxidizing agent can typically act effectively as a polishing accelerator by being used in combination with the aforementioned acid. For example, such an oxidizing agent can be preferably used in a polishing composition used for polishing a metal material (for example, a nickel phosphorus-plated magnetic disk substrate).

  In the embodiment including the oxidizing agent, the content of the oxidizing agent in the polishing composition SB (when including a plurality of oxidizing agents, the total content thereof) is, for example, 0.01 g / L or more. it can. The content is preferably 0.1 g / L or more, more preferably 0.5 g / L or more from the viewpoint of the polishing rate or the like. Further, from the viewpoint of economy and the like, the content of the oxidizing agent is suitably 100 g / L or less, preferably 75 g / L or less, more preferably 60 g / L or less.

  Polishing composition SB disclosed here can be preferably implemented in such a manner that the polishing composition does not substantially contain an oxidizing agent. For example, when the polishing object is a silicon wafer, if the polishing composition contains an oxidizing agent, the surface of the polishing object is oxidized by supplying the composition to the polishing object. This is because an oxide film is formed, which may reduce the polishing rate. Also, when the object to be polished is a glass material (for example, a glass magnetic disk substrate), an oxidizing agent is usually unnecessary. For example, the polishing composition SB that substantially does not contain at least any of hydrogen peroxide, sodium persulfate, ammonium persulfate, and sodium dichloroisocyanurate is preferable. In addition, that polishing composition does not contain an oxidizing agent substantially means not containing an oxidizing agent at least intentionally. Accordingly, a trace amount (for example, the molar concentration of the oxidizing agent in the polishing composition is 0.0005 mol / L or less, preferably 0.0001 mol / L or less, more preferably 0.00001, derived from the raw material, the manufacturing method, or the like. The polishing composition that inevitably contains an oxidizing agent of mol / L or less, particularly preferably 0.000001 mol / L or less) is a concept of a polishing composition that does not substantially contain an oxidizing agent here. Can be included.

  The polishing composition SB disclosed herein may contain a water-soluble polymer. By containing the water-soluble polymer, the surface roughness after polishing with the polishing composition (for example, the surface roughness of the magnetic disk substrate) can be further reduced. Examples of the water-soluble polymer include cellulose derivatives, starch derivatives, polymers containing oxyalkylene units, polymers containing nitrogen atoms, vinyl alcohol polymers, polymers having sulfonic acid groups, acrylic polymers, and the like. Specific examples include hydroxyethyl cellulose, pullulan, random copolymer or block copolymer of ethylene oxide and propylene oxide, polyvinyl alcohol, polyisoprene sulfonic acid, polyvinyl sulfonic acid, polyallyl sulfonic acid, polyisoamylene sulfonic acid. Polystyrene sulfonic acid or a salt thereof, polyacrylic acid or a salt thereof, polyvinyl acetate, polyethylene glycol, polyvinyl pyrrolidone, polyacryloylmorpholine, polyacrylamide and the like. A water-soluble polymer can be used singly or in combination of two or more. The technique disclosed here can also be preferably implemented in an embodiment in which the polishing composition SB does not substantially contain a water-soluble polymer.

  In the embodiment including the water-soluble polymer, the content of the water-soluble polymer in the polishing composition SB (in the embodiment including a plurality of water-soluble polymers, the total content thereof) is, for example, 0.01 g / L. This can be done. The content is preferably 0.05 g / L or more, more preferably 0.08 g / L or more, and still more preferably 0.1 g / L or more from the viewpoint of surface smoothness and the like. Further, from the viewpoint of polishing rate and the like, the content is suitably 10 g / L or less, preferably 5 g / L or less, for example 1 g / L or less.

The polishing composition SB disclosed herein can contain a surfactant (typically a water-soluble organic compound having a molecular weight of less than 1 × 10 ⁴ ) as an optional component. By using the surfactant, the dispersion stability of the polishing composition SB can be improved. Surfactant can be used individually by 1 type or in combination of 2 or more types. The surfactant is not particularly limited, and any of nonionic surfactants, anionic surfactants, cationic surfactants, and amphoteric surfactants can be used. From the viewpoint of low foaming property and ease of pH adjustment, a nonionic surfactant is more preferable. For example, oxyalkylene polymers such as polyethylene glycol, polypropylene glycol, polytetramethylene glycol; polyoxyethylene alkyl ether, polyoxyethylene alkylphenyl ether, polyoxyethylene alkylamine, polyoxyethylene fatty acid ester, polyoxyethylene glyceryl ether fatty acid Nonionic surfactants such as esters, polyoxyalkylene adducts such as polyoxyethylene sorbitan fatty acid esters; copolymers of plural types of oxyalkylene (diblock type, triblock type, random type, alternating type); It is done. Polishing composition SB disclosed here can also be preferably implemented in an embodiment that does not substantially contain a surfactant as an optional component.

  Examples of antiseptics and fungicides include isothiazoline compounds, paraoxybenzoates, phenoxyethanol and the like.

(Polishing liquid)
In the technique disclosed herein, the polishing composition is typically supplied to a polishing object in the form of a polishing liquid containing the polishing composition and used for polishing the polishing object. The polishing liquid may be prepared, for example, by diluting (typically diluting with water) any of the polishing compositions disclosed herein. Or you may use polishing composition as polishing liquid as it is. That is, the concept of the polishing composition in the technology disclosed herein is used as a polishing liquid diluted with a polishing liquid (working slurry) that is supplied to a polishing object and used for polishing the polishing object. Both concentrated liquid (polishing liquid stock solution) are included. Another example of the polishing liquid containing the polishing composition disclosed herein is a polishing liquid obtained by adjusting the pH of the composition.

  The content of abrasive grains in the polishing liquid is not particularly limited, but is usually 0.01% by weight or more, preferably 0.05% by weight or more, more preferably 0.1% by weight or more, and still more preferably. 0.15% by weight or more (for example, 1% by weight or more, typically 3% by weight or more). By increasing the abrasive content, higher polishing rates can be achieved. From the viewpoint of economy, usually, the content is suitably 30% by weight or less, preferably 25% by weight or less, more preferably 20% by weight or less. Further, the content may be 15% by weight or less, for example, 10% by weight or less, and may be 5% by weight or less (further 2% by weight or less, for example 1% by weight or less). .

(Concentrated liquid)
The polishing composition disclosed herein may be in a concentrated form (that is, in the form of a polishing liquid concentrate) before being supplied to the object to be polished. The polishing composition in such a concentrated form is advantageous from the viewpoints of convenience, cost reduction, etc. during production, distribution, storage and the like. The concentration rate can be, for example, about 2 to 100 times in terms of volume, and usually about 2 to 50 times is appropriate. The concentration rate of the polishing composition according to a preferred embodiment is, for example, 2 to 10 times.

  Thus, the polishing composition in the form of a concentrated liquid can be used in such a manner that a polishing liquid is prepared by diluting at a desired timing and the polishing liquid is supplied to a polishing object. The dilution can be typically performed by adding the aforementioned solvent to the concentrated solution and mixing. Moreover, when the said solvent is a mixed solvent, you may add and dilute only some components among the structural components of this solvent, and add the mixed solvent which contains those structural components in the amount ratio different from the said solvent. May be diluted. In addition, as will be described later, in a multi-component polishing composition, a part of them may be diluted and then mixed with another agent to prepare a polishing liquid, or a plurality of agents may be mixed. Later, the mixture may be diluted to prepare a polishing liquid.

  The content of abrasive grains in the concentrated liquid can be, for example, 50% by weight or less. From the viewpoint of the stability of the polishing composition (for example, dispersion stability of abrasive grains) and filterability, the content is usually preferably 45% by weight or less, more preferably 40% by weight or less. . In a preferred embodiment, the abrasive content may be 30% by weight or less, or 20% by weight or less (eg, 15% by weight or less). In addition, from the viewpoint of convenience in manufacturing, distribution, storage, etc. and cost reduction, the content of abrasive grains can be, for example, 0.5% by weight or more, preferably 1% by weight or more, and more preferably Is 3% by weight or more (for example, 5% by weight or more).

  The polishing composition disclosed herein may be a one-part type or a multi-part type including a two-part type. For example, the part A containing some components of the constituents of the polishing composition and the part B containing the remaining components may be mixed and used for polishing a polishing object. Part A and part B may be mixed in advance, may be mixed in the middle of a supply line that reaches the object to be polished, or may be mixed on the surface of the object to be polished or just before that. Although not particularly limited, the polishing composition SB disclosed herein is used for polishing a polishing object by mixing, for example, part A containing silica S and part B containing inhibitor B. Can be configured as follows. Part A can be a dispersion typically containing silica S and a solvent. Part B may be a solution or dispersion containing the inhibitor B and a solvent, and may consist essentially of the inhibitor B.

<Polishing object>
The polishing composition disclosed herein can be applied to polishing a polishing object having various materials and shapes. The material of the polishing object is, for example, a metal or semimetal such as silicon, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, or an alloy thereof, and a thin film used for semiconductor wiring using those materials. Glassy materials such as quartz glass, aluminosilicate glass, and glassy carbon; ceramic materials such as alumina, silica, sapphire, silicon nitride, tantalum nitride, and titanium carbide; compound semiconductor substrates such as silicon carbide, gallium nitride, and gallium arsenide The material may be, but is not limited to, a resin material such as a polyimide resin. Moreover, the grinding | polishing target object comprised with the some material among these may be sufficient. The shape of the object to be polished is not particularly limited. The polishing composition disclosed herein can be preferably applied to polishing a polishing object having a flat surface such as a plate shape or a polyhedron shape.

  The technique disclosed here can be preferably applied to polishing of a glass material. Here, “polishing glass material” refers to polishing an object to be polished in which at least a part of the surface to be polished is made of a glass material. Specifically, it includes polishing a glass substrate). Examples of the glass material include aluminosilicate glass, soda lime glass, soda aluminosilicate glass, aluminoborosilicate glass, borosilicate glass, quartz glass, and crystallized glass. As examples of crystallized glass, the main crystal phases are spodumene, mullite, aluminum borate crystal, β-quartz solid solution, α-quartz, cordierite, enstatite, celsian, wollastonite, anorsite, forsterite, lithium Examples thereof include metasilicate and lithium disilicate. The polishing composition disclosed herein is suitable for use in polishing a glass substrate such as a magnetic disk glass substrate (glass magnetic disk substrate) and a photomask glass substrate.

  The technique disclosed herein can be preferably applied to polishing of a glass material containing silicic acid (hereinafter also referred to as “silica-containing glass material”). The film-like substance is a silicate compound that can contain a small amount of an alkali metal as described above. In a glass material containing silicic acid, the film-like substance is particularly easy to adhere, and once attached, the film-like substance is removed. hard. Moreover, since the film-like substance and the silicic acid-containing glass material have such similar compositions, it is difficult to set chemical treatment conditions for removing only the film-like substance without damaging the silicic acid-containing glass material. That is, if the chemical treatment conditions for removing the film-like substance are strict, the surface quality of the silicic acid-containing glass material (polishing object) tends to decrease. Therefore, in polishing of a silicate-containing glass material, it is particularly meaningful to apply the technique disclosed herein to prevent adhesion of a film-like substance. For example, application to a glass substrate having a surface made of a silicate-containing glass material is preferable, and application to a glass magnetic disk substrate that requires a high level of defect reduction is particularly preferable.

  The polishing composition disclosed herein can be highly applied to polishing of magnetic disk substrates because it can highly reduce surface defects after polishing (especially convex defects having a generally flat shape (table shape, etc.)). Can be done. For example, it is suitable for use in polishing a glass magnetic disk substrate made of a glass material such as aluminosilicate glass or a magnetic disk substrate (Ni-P substrate) having a nickel phosphorus plating layer on the surface of an aluminum alloy. Application to polishing of a glass magnetic disk substrate is particularly preferred. The aluminosilicate glass here may include those having a crystal structure and those subjected to chemical strengthening treatment. You may perform a chemical strengthening process after grinding | polishing.

<Polishing method>
The polishing composition SB disclosed herein is particularly suitable for polishing (precise polishing) of an object to be polished. Therefore, according to this specification, a method for producing a polished article including a polishing step using the polishing composition SB is provided. The polishing object to be polished with the polishing composition SB may be a polishing object obtained through processes such as lapping (rough polishing), grinding, and plating. Although polishing composition SB contains silica S and therefore typically contains a film-like substance, adhesion of the film-like substance to the object to be polished can be suppressed by inhibitor B. In other words, the inhibitor B can function as a detoxifying agent for a film-like substance that can be contained in the polishing composition SB. Thereby, while enjoying the advantages of using silica S, it is possible to prevent the occurrence of convex defects due to the adhesion of the film-like substance and to realize a higher quality surface. Moreover, according to the manufacturing method of the polishing article including the polishing process using polishing composition SB, the polishing article which has a high quality surface can be manufactured efficiently.

  The polishing composition SB can be particularly preferably used for final polishing of an object to be polished because it can reduce convex defects on the polished surface. Therefore, according to this specification, a method for producing a polished article including a final polishing step using the polishing composition SB (for example, a method for producing a glass magnetic disk substrate or other magnetic disk substrate) is provided. Note that final polishing refers to the final polishing step in the manufacturing process of the object (that is, a step in which no further polishing is performed after that step). However, it is acceptable to perform a surface treatment process using a surface treatment liquid described later as a subsequent process of the final polishing process using the polishing composition SB.

  Polishing composition SB disclosed here may also be used in a polishing step upstream of final polishing. Here, the polishing process upstream of the final polishing refers to a preliminary polishing process between the rough polishing process and the final polishing process. The preliminary polishing step typically includes at least a primary polishing step, and may further include secondary, tertiary, etc. polishing steps. The polishing composition disclosed herein may be used, for example, in a polishing step performed immediately before final polishing.

  Although it does not specifically limit, the polishing process using polishing composition SB can be implemented as follows, for example. That is, a polishing liquid containing any polishing composition SB disclosed herein is prepared. Preparing the polishing liquid may include preparing a polishing liquid by adding operations such as concentration adjustment (for example, dilution) and pH adjustment to the polishing composition. Or you may use the said polishing composition as polishing liquid as it is. Further, in the case of a multi-drug type polishing composition, to prepare the polishing liquid, mixing those agents, diluting one or more agents before the mixing, and after the mixing Diluting the mixture, etc. can be included.

  Next, the polishing liquid is supplied to the object to be polished and polished by a conventional method. As the polishing machine, a known polishing machine corresponding to the shape of the object to be polished and the purpose of polishing can be appropriately adopted. For example, when polishing a glass substrate, the glass substrate that has undergone the lapping process is set in a polishing machine, and a polishing liquid is supplied to the surface (surface to be polished) of the glass substrate through a polishing pad of the polishing machine. Typically, while supplying the polishing liquid continuously, the polishing pad is pressed against the surface of the glass substrate to relatively move (for example, rotate) the two. The kind of polishing pad is not particularly limited. For example, any of non-woven fabric type, suede type, those containing abrasive grains, those not containing abrasive grains, etc. may be used. The use of a polishing pad that does not contain abrasive grains is preferable, and a suede type polishing pad is particularly preferable.

  A rinse treatment may be performed following the completion of the supply of the polishing liquid. This rinsing process is typically performed by supplying a rinsing liquid to the surface to be polished instead of the polishing liquid. Although it does not specifically limit as a rinse liquid, For example, water can be used preferably. Alternatively, a rinsing liquid containing the same components as the polishing liquid may be used except that silica S and other solid contents are not included.

  In a preferred embodiment, the rinsing liquid used for the rinsing treatment may contain the inhibitor B. Therefore, according to the present specification, the rinsing liquid contains any of the inhibitor B disclosed herein, Is provided with a rinse solution further containing a solvent (eg, water). Moreover, the composition for the rinse liquid preparation containing the said inhibitor B is provided. The rinsing liquid can be preferably used in a mode in which the rinsing liquid is supplied to a polishing object following a polishing liquid containing silica S (a polishing liquid containing the inhibitor B or a polishing liquid not containing the inhibitor B). . According to the rinse liquid having such a composition, it is possible to prevent the film-like substance in the polishing liquid that may remain at the start of the rinsing process from adhering to the object to be polished. Further, it is possible to prevent the film-like substance removed from the object to be polished by the rinsing process from reattaching to the object to be polished. Therefore, convex defects due to adhesion of the film-like substance can be reduced by using the rinse liquid.

  In the case where the rinse liquid contains the inhibitor B, the content of the inhibitor B (the total amount thereof when a plurality of types of the inhibitor B is contained) is not particularly limited. For example, the content (concentration) of the inhibitor B that can be applied to the polishing composition SB can also be employed in the rinse liquid.

  The pH of the rinse liquid is not particularly limited. For example, the pH that can be applied to the polishing composition SB can also be employed in the rinse liquid. For adjusting the pH, a pH adjusting agent similar to that for the polishing composition SB can be used as necessary. In a preferred embodiment, the rinse solution may be generally neutral (for example, pH 6 to pH 8). The rinse liquid may have a composition substantially composed of the inhibitor B and water.

  The matters disclosed by this specification further include a rinsing method for rinsing a polishing object using a rinsing liquid containing any of the inhibitor B disclosed herein, and polishing including the rinsing treatment. The method, the manufacturing method of the polished article, and the defect reduction method including the rinsing process are included.

  The method for producing a polished article disclosed herein may further include a polishing step (hereinafter also referred to as “step (P)”) performed before the polishing step using the polishing composition SB. According to the aspect including the step (P), it is possible to realize the effect of shortening the time required for the entire polishing step and increasing the productivity of the polished article. Further, by performing the step (P), for example, a defect (for example, a dent defect) existing at the start of the polishing step can be efficiently eliminated. The step (P) may be one polishing step using one type of polishing composition, or may include two or more polishing steps performed using two or more types of polishing compositions in sequence. Good.

  The polishing composition (hereinafter also referred to as “polishing composition (P)”) used in the step (P) is not particularly limited. For example, as the abrasive grains, any of abrasive grains other than the silica S exemplified as a material that can be used for the polishing composition SB and the silica S can be used. When the polishing composition (P) contains silica S, the silica S may be the same as or different from the silica S contained in the polishing composition SB. The difference between the silica S contained in the polishing composition (P) and the silica S contained in the polishing composition SB is, for example, a difference in one or more of particle diameter, particle shape, density and other characteristics. obtain.

The average primary particle size D1 _P of the abrasive grains contained in the polishing composition (P) is preferably equal to the average primary particle size D1 _S silica S contained in the polishing composition SB or more. For example, D1 _P / D1 _S can be set to 1 to 100, and normally 2 to 50 is appropriate. In a preferred embodiment, as the abrasive grains contained in the polishing composition (P), those having a D1 _{P of} about 10 nm to 1000 nm (more preferably 20 nm to 700 nm, more preferably 30 nm to 500 nm) can be preferably employed.

  When the polishing composition (P) contains silica particles as abrasive grains, either silica S or silica NS can be used as the silica particles. Although not particularly limited, silica particles having an average primary particle diameter D1 of about 10 nm to 1000 nm (more preferably 20 nm to 700 nm, still more preferably 30 nm to 500 nm, for example, 30 nm to 200 nm) of the polishing composition (P) are used. It can preferably be employed as an abrasive. Silica particles having an average primary particle diameter D1 of 1 to 50 times (more preferably 1.5 to 30 times, for example, 2 to 20 times) of silica S contained in polishing composition SB are preferred.

  When the polishing composition (P) contains silica particles as abrasive grains, the shape (outer shape) of the silica particles is not particularly limited, and may be spherical or non-spherical. Specific examples of the non-spherical shape include a peanut shape (that is, a shape of peanut shell), a cocoon shape, a shape with a protrusion (for example, a confetti shape), a rugby ball shape, and the like. As the silica particles, one type having the same shape may be used alone, or two or more types having different shapes may be used in combination. Especially, the silica particle which has a peanut shape, a bowl shape, and a shape with a protrusion is preferable, and a silica particle with a protrusion is more preferable.

  When a grinding | polishing target object is a glass material, a ceria, a zirconia, a titania, and a silica are illustrated as an abrasive grain which can be preferably used for polishing composition (P). Of these, ceria and silica are preferable. As ceria, particles having an average primary particle diameter D1 of about 10 nm to 1000 nm (more preferably 30 nm to 700 nm, still more preferably 100 nm to 500 nm) can be preferably used.

  The abrasive grain content in the polishing composition (P) is not particularly limited. For example, the abrasive grain content similar to that of the above-described polishing liquid or concentrated liquid can be applied to the abrasive grain content in the polishing composition (P).

  The polishing composition (P) typically contains a solvent for dispersing the abrasive grains as described above. As the solvent, the same solvent as the polishing composition SB can be preferably used.

  The pH of the polishing composition (P) is not particularly limited, and can be, for example, pH 12.0 or less (typically pH 1.0 to 12.0), and pH 10.0 or less (typically pH 1. 0 to 10.0). In a preferred embodiment, the polishing composition (P) may have a pH of 9.0 or less (for example, pH 2.0 to 9.0), and pH 8.0 or less (typically pH 2.5 to 8). 0.0, for example, pH 3.0 to 8.0) is more preferable. The pH can be preferably applied in the production of a glass substrate such as a glass magnetic disk substrate. When ceria is used as the abrasive grains, the polishing composition (P) can have a pH of, for example, pH 3.0 to 9.0, pH 4.0 to 8.0, and pH 5.0 to 9.0. It may be 7.5. For adjusting the pH, a pH adjusting agent similar to that for the polishing composition SB can be used as necessary.

  Polishing composition (P) may contain the well-known additive (for example, water-soluble polymer etc.) similar to polishing composition SB as needed. When a water-soluble polymer is included as an additive, the amount used is usually suitably 0.05 g / L to 20 g / L, and preferably 1 g / L to 10 g / L. The technique disclosed here can be preferably implemented in an embodiment in which the polishing composition (P) does not substantially contain an oxidizing agent. The polishing composition (P) having such a composition can be preferably employed, for example, in an embodiment in which the object to be polished is a glass material (such as a glass magnetic disk substrate). In a preferred embodiment, the polishing composition (P) can be substantially composed of abrasive grains, a solvent, a pH adjuster (for example, an acid) and a water-soluble polymer used as necessary.

  In the step (P), a polishing machine having a polishing pad is used, and a polishing liquid containing the polishing composition (P) is supplied between the polishing object set in the polishing machine and the polishing pad. The present invention can be preferably implemented in a mode in which the polishing object and the polishing pad are relatively moved. As the polishing machine, a known polishing machine corresponding to the shape of the object to be polished and the purpose of polishing can be appropriately adopted. The kind of polishing pad used for the step (P) is not particularly limited. For example, any of non-woven fabric type, suede type, those containing abrasive grains, those not containing abrasive grains, etc. may be used. The use of a polishing pad that does not contain abrasive grains is preferable, and a suede type polishing pad is particularly preferable. A rinse treatment may be performed following the completion of the supply of the polishing liquid.

  The film-like substance adhesion preventing agent (inhibitor B) disclosed herein can be preferably used as a constituent component of the polishing composition containing silica S as described above. By containing the inhibitor B in the polishing composition containing silica S, the film-like substance that can be contained in the composition can be rendered harmless. More specifically, the film-like substance can be prevented from adhering to the object to be polished, and the convex defects caused by the film-like substance can be reduced. Therefore, according to this specification, there is provided a method for detoxifying the film-like substance, wherein the polishing composition containing silica S and the film-like substance contains the inhibitor B.

<Surface treatment liquid>
The inhibitor B disclosed herein can also be preferably used as a constituent of a surface treatment liquid for treating an object to be polished. Examples of a polishing object that is a treatment target of a surface treatment liquid containing the inhibitor B (hereinafter also referred to as “surface treatment liquid B”) include a polishing object that may have a film-like substance attached to the surface. As a suitable example of such an object to be polished, polishing was performed using a polishing composition containing silica S (a polishing composition containing an inhibitor B or a polishing composition containing no inhibitor B). A polishing object is mentioned. According to the surface treatment using the surface treatment liquid B, when the surface treatment liquid B contains the inhibitor B, the reattachment of the film-like substance removed from the object to be treated to the object to be polished is suppressed. obtain. Thereby, the film-like substance can be efficiently removed from the surface of the object to be polished. Therefore, according to the surface treatment liquid B, convex defects caused by the film-like substance can be effectively reduced in the polished object after the surface treatment.

  Here, the “surface treatment” performed by the surface treatment liquid (surface treatment liquid B) containing the inhibitor B comprehensively refers to treatment performed by applying the surface treatment liquid to the surface of the object to be polished. It is a concept. The surface treatment here may be a treatment grasped as cleaning, rinsing, polishing, etc. of the polishing object as long as the effect of removing the film-like substance that may exist on the surface of the polishing object from the surface can be exhibited.

  The surface treatment liquid B disclosed herein typically contains a solvent in which the inhibitor B is dissolved or dispersed. As a solvent, the thing similar to the solvent which can be used for polishing composition SB can be used preferably. One preferred example of the solvent used for the surface treatment liquid B is water.

  The content of the inhibitor B in the surface treatment liquid B (the total amount thereof when a plurality of types of the inhibitor B is contained) is not particularly limited, and a desired effect can be obtained according to the purpose of use or the mode of use. Can be set as appropriate. In a preferred embodiment, the content of the inhibitor B in the surface treatment liquid B can be, for example, 0.001 mmol / L or more, and is usually from the viewpoint of better exhibiting the effect of preventing the adhesion of the film-like substance. It is appropriate to set it to 01 mmol / L or more, preferably 0.1 mmol / L or more, and more preferably 0.3 mmol / L or more (for example, 0.5 mmol / L or more). Further, the content of the inhibitor B in the surface treatment liquid can be, for example, 1000 mmol / L or less, and from the viewpoint of economy, it is usually preferably 500 mmol / L or less, and 100 mmol / L or less. Is more preferable. In a preferred embodiment, the content of the inhibitor B in the surface treatment liquid can be 10 mmol / L or less, and can be 5 mmol / L or less, and further 3 mmol / L or less.

  The surface treatment liquid disclosed herein may include particles. The particles to be included in the surface treatment liquid are not particularly limited, and any of abrasive grains other than silica S and silica S exemplified as materials that can be used for the polishing composition SB can be used. The said particle | grain can be used individually by 1 type or in combination of 2 or more types. From the viewpoint of improving the surface quality after the surface treatment, it is preferable that the surface treatment liquid does not substantially contain a film-like substance. Therefore, the surface treatment liquid preferably does not contain silica S. In other words, when particles are included in the surface treatment liquid, the particles are preferably selected from particles other than silica S.

  As a suitable example of the particle | grains which can be included in a surface treatment liquid, silica particles other than silica S (silica NS) are mentioned. When the surface treatment liquid having such a composition contains silica NS having a composition similar to the film-like substance, the film-like substance can be effectively removed from the object to be polished by the action of the silica NS. Moreover, since the surface treatment liquid containing silica NS can be made into a composition which does not contain a film-like substance substantially, the situation where the film-like substance derived from this surface treatment liquid adheres to a grinding | polishing target object is avoided. Can do.

  Silica NS is preferably selected from the group consisting of alkoxide colloidal silica and dry silica. Examples of dry process silica here include silica (fumed silica) obtained by burning a silane compound such as silicon tetrachloride or trichlorosilane in a hydrogen flame, or the reaction between metal silicon and oxygen. The silica produced by Among these, a preferred silica NS is an alkoxide colloidal silica. The alkoxide colloidal silica is colloidal silica produced by hydrolysis condensation reaction of alkoxysilane. As the alkoxysilane, tetraalkoxysilane (for example, tetraethoxysilane, tetramethoxysilane, etc.) is usually used. Silica NS can be used alone or in combination of two or more. In the surface treatment liquid according to a preferred embodiment, the particles contained in the surface treatment liquid are substantially composed of silica NS.

  When the surface treatment liquid B contains particles, the average primary particle diameter D1, the average secondary particle diameter D2, and D2 / D1 of the particles are not particularly limited. For example, the preferable D1, D2 and D2 / D1 in the silica S described above can be preferably applied to particles to be included in the surface treatment liquid. Further, when the surface treatment liquid B contains particles, the content of the particles is not particularly limited. For example, the same abrasive grain content as the polishing liquid or concentrated liquid described above can be applied to the particle content of the surface treatment liquid B.

  The surface treatment liquid B may further contain a known additive similar to the polishing composition SB, if necessary. The technique disclosed herein can also be preferably implemented in a mode in which the surface treatment liquid B does not substantially contain an oxidizing agent. The surface treatment liquid B having such a composition can be preferably employed, for example, in an embodiment in which the object to be polished is a glass material (such as a glass magnetic disk substrate). The surface treatment liquid B disclosed herein is, for example, a composition substantially composed of an inhibitor B and a solvent; a composition substantially composed of an inhibitor B, a solvent and a pH adjuster: the inhibitor B, a solvent And a composition substantially composed of a surfactant; a composition substantially composed of an inhibitor B, a solvent, a pH adjuster and a surfactant; and the like.

  The pH of the surface treatment liquid B is not particularly limited. For example, the pH that can be applied to the polishing composition SB can also be employed in the surface treatment liquid B. For adjusting the pH, a pH adjusting agent similar to that for the polishing composition SB can be used as necessary. In a preferred embodiment, the surface treatment liquid B may be generally neutral (for example, pH 6 to pH 8).

  The surface treatment using the surface treatment liquid B can be performed in various modes capable of removing the film-like substance from the surface of the polishing object by the treatment.

  As a preferred embodiment of the surface treatment, a polishing machine having a polishing pad is used, and the polishing object is supplied while supplying the surface treatment liquid B between the polishing object set in the polishing machine and the polishing pad. A mode in which the polishing pad is moved relative to the polishing pad is exemplified. As the polishing machine, a known polishing machine corresponding to the shape of the object to be polished and the purpose of polishing can be appropriately adopted. The kind of polishing pad to be used is not particularly limited. For example, any of non-woven fabric type, suede type, those containing abrasive grains, those not containing abrasive grains, etc. may be used. The use of a polishing pad that does not contain abrasive grains is preferable, and a suede type polishing pad is particularly preferable. Subsequent to the completion of the supply of the surface treatment liquid B, a rinse treatment with a rinse liquid (for example, water) not containing the inhibitor B may be performed.

  As another aspect of the surface treatment using the surface treatment liquid B, an aspect in which the surface of the polishing object is polished with a polishing tape in the presence of the surface treatment liquid B; the surface of the polishing object in the presence of the surface treatment liquid B A mode in which cleaning is performed with a wiping tape; a mode in which the surface of an object to be polished is scrubbed with a sponge made of polyvinyl alcohol (PVA) in the presence of the surface treatment liquid B; These treatments may be performed in a state where the polishing object is immersed in the surface treatment liquid B. Examples of other aspects of the surface treatment step include an aspect in which an object to be polished is immersed in the surface treatment liquid B and ultrasonic waves are applied; an aspect in which the high-pressure surface treatment liquid B is sprayed on the surface of the object to be polished; These can be performed singly or in combination of two or more. For example, scrub cleaning and ultrasonic application may be performed sequentially or in parallel.

  Although it does not specifically limit, the surface treatment using the surface treatment liquid B is, for example, a rinsing process in a polishing process using a polishing composition containing silica S; a polishing process using a polishing composition containing silica S A cleaning process performed as a next process of a polishing process using a polishing composition containing silica S; According to this specification, for example, the surface of the polishing object is treated with the step (1) of polishing the object to be polished with the polishing composition containing silica S and the surface treatment liquid (surface treatment liquid B) containing the inhibitor B. There is provided a method for producing a polished article, which comprises the processing step (2) in this order.

  In the above production method, step (1) is the last step in the polishing step using the polishing composition containing silica S (typically, the polishing step using the polishing composition containing a film-like substance). It is preferable. After the step (1), a polishing step using a polishing composition containing no silica S may be further performed. The polishing process performed after the process (1) may be performed before the process (2) or may be performed after the process (2). From the viewpoint of suppressing the expansion of the influence of the film-like substance that can adhere to the surface of the object to be polished in the step (1), it is preferable not to arrange another polishing step between the step (1) and the step (2). When the manufacturing method disclosed herein includes a polishing step performed after step (1) (preferably after step (2)), the polishing step does not include silica S and includes step (1). It is preferable to use a polishing composition containing abrasive grains having an average primary particle size smaller than that of the silica S used.

  The technique disclosed here can be preferably implemented in a mode in which the surface of the object to be polished is not dried between the end of step (1) and the start of step (2). That is, it can be preferably carried out in such a manner that the surface of the object to be polished is kept wet from the end of the step (1) to the start of the step (2). By this, it is suppressed that the film-form substance which can adhere in process (1) adheres to the surface of a grinding | polishing target strongly, and it exists in the tendency for a film-form substance to be easily removed in process (2). Therefore, an abrasive having a better surface quality can be produced.

<Composition set>
According to this specification, a composition set for producing an abrasive is provided that includes a first composition and a second composition in the set content. In the above-mentioned composition for producing an abrasive product, the first composition and the second composition are stored separately from each other, and are typically mixed and used. The composition set for manufacturing abrasives disclosed herein may further include a third composition stored separately from the first composition and the second composition as the set content.

  The first composition constituting the composition set for manufacturing an abrasive product includes silica S, and preferably further includes a solvent. This first composition is typically a composition comprising a film-like substance. The first composition can be used as it is or diluted with a suitable solvent (for example, water) to prepare a polishing composition.

  The second composition constituting the composition set for manufacturing an abrasive is typically a composition that does not substantially contain a film-like substance. This second composition preferably comprises a pH adjuster. Thus, storing silica S and a pH adjuster separately is advantageous from the viewpoint of storage stability of the first composition. The second composition may further comprise a solvent suitable for dissolving or diluting the pH adjusting agent. When the second composition is in the form of a solution, it is preferable that the solution does not contain insoluble matters such as particles. The second composition can be used in the preparation of the polishing composition as it is, or dissolved in an appropriate solvent (for example, water) or diluted with the solvent. For example, the polishing composition can be prepared by mixing the first composition and the second composition by a conventional method. Moreover, you may add a 2nd composition at arbitrary timings to the polishing composition containing a 1st composition.

  In a preferred embodiment of the composition set for producing a polished article disclosed herein, the first composition or the second composition can contain the inhibitor B. Both the first composition and the second composition may contain the inhibitor B at the same or different concentrations. Thus, by including the inhibitor B in at least one of the first composition and the second composition, it is possible to save labor for preparing the polishing composition containing the inhibitor B.

  In another preferable embodiment of the above composition set for manufacturing an abrasive, the inhibitor B may be contained in the set content as a third composition stored separately from the first composition and the second composition. Good. The composition set having such a configuration is easy to use because the mode of use and concentration of the inhibitor B are high. The third composition may contain the inhibitor B alone or may be a solution containing the inhibitor B and a suitable solvent. When the third composition is in the form of a solution, it is preferable that the solution does not contain insoluble matters such as particles.

  The third composition can be used for the preparation of the polishing composition as it is, or dissolved in an appropriate solvent (for example, water) or diluted with the solvent. For example, the polishing composition can be prepared by mixing the first composition, the second composition, and the third composition by a conventional method. In addition, the third composition is added to the polishing composition containing the first composition (which may be a polishing composition containing the first composition and the second composition; the same shall apply hereinafter) at an arbitrary timing. Also good. For example, the third composition may be added to the polishing composition after the supply of the polishing composition containing the first composition to the object to be polished is started. As another use mode, the third composition is used as it is or after being dissolved in an appropriate solvent (for example, water) or diluted with the solvent after the polishing step with the polishing composition containing the first composition. The aspect used for preparation of a surface treatment liquid is mentioned.

Note that the matters disclosed by this specification include the following.
<1> A film-like substance adhesion preventing agent contained in a polishing composition containing colloidal silica derived from an alkali silicate-containing liquid,
Including a film-like substance adhesion inhibitor represented by the general formula (I),
A film-like substance adhesion preventing agent that reduces defects caused by adhesion of a film-like substance in polishing using the polishing composition.
<2> A step (1) of polishing an object to be polished with a polishing composition containing colloidal silica derived from an alkali silicate-containing liquid;
A method for producing a polished article, comprising, in this order, a step (2) of surface-treating the object to be polished with a surface treatment liquid containing a film-form substance adhesion inhibitor represented by the general formula (I).
<3> The production method according to <2>, wherein the polishing composition in the step (1) contains the film-like substance.
<4> The production method according to <2> or <3>, wherein the surface treatment liquid in the step (2) does not substantially contain the film-like substance.
<5> A film represented by the above general formula (I), which is a surface treatment agent used for a polishing object treated (for example, polished) with a colloidal silica-containing liquid containing a colloidal silica derived from an alkali silicate-containing liquid. A surface treatment agent comprising an agent for preventing adhesion of a substance.
<6> A surface treatment liquid used for a polishing object treated (typically polished) with a colloidal silica-containing liquid containing colloidal silica derived from an alkali silicate-containing liquid, A surface treatment liquid comprising a surface treatment agent and a solvent capable of dissolving or dispersing the surface treatment agent.
<7> A polishing composition used for polishing the polishing object after the step of polishing the polishing object using a polishing composition containing colloidal silica derived from an alkali silicate-containing liquid,
Polishing composition containing the film-form substance adhesion inhibitor represented by the said general formula (I), and an abrasive grain (preferably abrasive grains other than the colloidal silica derived from an alkali silicate containing liquid).
<8> comprising a composition (a) and a composition (b) stored separately from each other;
The composition (a) includes colloidal silica derived from an alkali silicate-containing liquid,
The said composition (b) is a composition set for abrasive | polishing material manufacture containing the film-form substance adhesion inhibitor represented by the said general formula (I).

  Several examples relating to the present invention will be described below, but the present invention is not intended to be limited to those shown in the examples.

The contents of the additives used in the following examples and comparative examples are as follows.
A1: Coconut oil fatty acid methyl taurine sodium A2: Sodium di (2-ethylhexyl) sulfosuccinate A3: Sodium lauryl sulfate A4: Sodium dodecylbenzenesulfonate

Experimental example 1
<Preparation of polishing composition>
Example 1
An aqueous dispersion containing colloidal silica having an average primary particle diameter D1 of 12 nm, derived from an alkali silicate-containing liquid, sulfuric acid as a pH adjuster, additive A1, and ion-exchanged water are mixed, and the colloidal silica is mixed. A polishing composition having the composition shown in Table 1 was prepared. The amount of the aqueous dispersion, pH adjuster and additive used was adjusted so that the concentration of the abrasive grains was 12.6% by weight, the pH was 3.0, and the additive content was 1 mmol / L. .

(Examples 2 to 7 and Comparative Examples 2 and 3)
Table 1 was obtained in the same manner as in Example 1 except that colloidal silica having an average primary particle diameter D1 of 17 nm derived from an alkali silicate-containing liquid was used as an abrasive, and the pH adjuster and additive shown in Table 1 were used. A polishing composition having the composition shown in 1 was prepared.

(Comparative Example 1)
A polishing composition having the composition shown in Table 1 was prepared in the same manner as in Example 2 except that additive A1 was not used.

<Polishing glass substrate>
Using the polishing compositions of Examples 1 to 7 and Comparative Examples 1 to 3 as they were as polishing liquids, 65 mm (about 2.5 inches) diameter magnetic disk aluminosilicate glass substrates were polished under the following conditions. As the glass substrate, a glass substrate pre-polished with a pre-polishing composition containing ceria (CeO ₂ ) abrasive grains having an average primary particle diameter D1 of 300 nm was used.

(Polishing conditions)
Polishing device: Double-side polishing device manufactured by Speedfam, model "9B-5P"
Polishing pad: Suede pad Polishing pressure: 130 g / cm ²
Upper platen rotation speed: 13rpm
Lower platen rotation speed: 40 rotations / minute Polishing liquid supply rate: 15 mL / minute (flowing)
Polishing liquid temperature: 25 ° C
Polishing time: 10 minutes

The polished substrate was washed under the following conditions and dried. Then, the following evaluation was performed.
(Cleaning conditions)
The substrate after polishing is immersed in an alkaline cleaning solution (“CSC-102B” available from Speed Pham Clean System Co., Ltd. diluted 200 times on a volume basis) to which 120 kHz ultrasonic waves are applied. After scrub cleaning with PVA sponge in pure water to which sonic waves were applied, and then immersed in ion-exchanged water to which 950 kHz ultrasonic waves were applied, it was pulled up into an isopropyl alcohol (IPA) atmosphere and dried.

<Evaluation>
(Polishing rate)
The polishing rate was calculated based on the difference in weight of the glass substrate before and after polishing and the density of the glass substrate. The results are shown in Table 1 in terms of relative values with Comparative Example 1 as 100%.

(Surface roughness)
The surface roughness Ra (nm) of the polished surface was measured using an atomic force microscope (AFM; trade name “D3100 Nano Scope V”, manufactured by Veeco) under the conditions of a measurement region of 1 μm × 1 μm. The results are shown in Table 1 in terms of relative values with Comparative Example 1 as 100%.

(Defect assessment)
The surface of the glass substrate according to each example was inspected with an inspection apparatus “Candela OSA7100” manufactured by KLA Tencor, and the location of defects in a predetermined area (area where the radial position from the disk center was 20 mm to 31 mm) was detected. Next, after the glass substrate was re-cleaned under the above-described cleaning conditions, the same region as before the re-cleaning was similarly examined to detect the location of the defect. Then, defects detected at the same position as before the re-cleaning in the inspection after the re-cleaning were counted as “residual defects”. The results are shown in Table 1 in terms of relative values with Comparative Example 1 as 100%. The large number of residual defects means that there are many defects due to strong deposits that cannot be removed even by re-cleaning.

  As shown in Table 1, in polishing with a polishing composition containing silica S as abrasive grains, Examples 1 to 1 using the additive A1 or A2 represented by the general formula (I) (that is, the inhibitor B) were used. 7, it was confirmed that the residual defects were significantly reduced as compared with Comparative Example 1 not containing the additive. On the other hand, in Comparative Examples 2 and 3 using the additive A3 or A4 not corresponding to the general formula (I), the effect of reducing the residual defects is not recognized as compared with Comparative Example 1, but the residual defects increase. It was a tendency to. Further, in Comparative Examples 2 and 3, the polishing rate was greatly reduced as compared with Comparative Example 1.

Experimental example 2
<Preparation of polishing composition>
(Example 8)
A polishing composition having the composition shown in Table 2 was prepared in the same manner as in Example 1 except that colloidal silica having an average primary particle diameter D1 of 25 nm derived from an alkali silicate-containing liquid was used as abrasive grains.

(Comparative Example 4)
A polishing composition having the composition shown in Table 2 was prepared in the same manner as in Example 1 except that ceria (CeO ₂ ) having an average primary particle diameter D1 of 25 nm was used as abrasive grains.

<Polishing and evaluating glass substrates>
Using the polishing compositions of Example 8 and Comparative Example 4 as they were in the polishing liquid, the glass substrate was polished and evaluated in the same manner as in Experimental Example 1. The results are shown in Table 2.

  As shown in Table 2, according to Example 8 using silica S as abrasive grains in polishing with a polishing composition containing abrasive grains having an average primary particle diameter D1 of about 25 nm and an additive A1, the abrasive grains As a result, a polishing rate substantially equivalent to that of Comparative Example 4 using cerium oxide was obtained, and the surface roughness was significantly improved as compared with Comparative Example 4. Moreover, also in Example 8, similarly to Examples 1-7, it was confirmed that the effect which remarkably reduces a residual defect compared with the comparative example 1 shown in Table 1 is acquired.

  Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.

Claims (11)

Colloidal silica derived from an alkali silicate-containing liquid;
The following general formula (I):
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
(Wherein A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation);
Polishing composition containing the film-form substance adhesion inhibitor represented by these. As the film-like substance adhesion inhibitor represented by the general formula (I), the following general formula (II):
_{^{[(R 1 -X-CO-}} Y-R 2) n CH 3-n -SO 3] - · M + (II)
(In the formula, R ¹ represents a hydrocarbon group having 4 to 20 carbon atoms, R ² represents an alkylene group having 1 to ² carbon atoms or a chemical bond, X represents an oxygen atom or a chemical bond, and Y represents —NR. ^{A 3-} group or a chemical bond, wherein R ³ represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, n is 1 or 2, and M ⁺ represents a monovalent cation);
The polishing composition of Claim 1 containing the compound represented by these.   Polishing composition of Claim 1 or 2 whose pH is 5 or less.   The polishing composition according to any one of claims 1 to 3, comprising a film-like substance having a thickness of less than 100 nm.   The polishing composition according to any one of claims 1 to 4, which is used for polishing a magnetic disk substrate.   The polishing composition according to any one of claims 1 to 4, which is used for polishing a glass magnetic disk substrate or a photomask substrate. A polishing composition comprising: preparing the polishing composition according to claim 1; and supplying the polishing composition to a polishing object to polish the polishing object. Production method.   A polishing method comprising polishing an object to be polished using the polishing composition according to any one of claims 1 to 6. In polishing using a polishing composition containing colloidal silica derived from an alkali silicate-containing liquid, a method for reducing defects present on the surface after polishing,
The polishing composition has the following general formula (I):
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
(Wherein A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation);
The defect reduction method which contains the film-form substance adhesion inhibitor represented by these, and grind | polishes a grinding | polishing target object using this polishing composition. A film-like substance adhesion preventing agent for preventing adhesion of a film-like substance contained in colloidal silica derived from an alkali silicate-containing liquid to a polishing object,
The following general formula (I):
_{[(A-B) n CH} 3-n -SO 3] - · M + (I)
(Wherein A represents a hydrophobic group, B represents a divalent organic group having a carbonyl group, n is 1 or 2, and M ⁺ represents a monovalent cation);
The film-form substance adhesion prevention agent containing the compound represented by these. A step (1) of polishing an object to be polished with a polishing composition containing colloidal silica derived from an alkali silicate-containing liquid;
A method for producing a polished article, comprising the step (2) of surface-treating the object to be polished with a surface treatment liquid containing the film-like substance adhesion preventing agent according to claim 10 in this order.