JP2016183081A5 - - Google Patents
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- JP2016183081A5 JP2016183081A5 JP2015064930A JP2015064930A JP2016183081A5 JP 2016183081 A5 JP2016183081 A5 JP 2016183081A5 JP 2015064930 A JP2015064930 A JP 2015064930A JP 2015064930 A JP2015064930 A JP 2015064930A JP 2016183081 A5 JP2016183081 A5 JP 2016183081A5
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- JP
- Japan
- Prior art keywords
- phase
- silicon carbide
- sintered body
- conductive
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 13
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000010304 firing Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001590 oxidative Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Claims (5)
焼結体におけるβ型炭化珪素の割合により、比抵抗値の温度依存性を異ならせた焼結体を製造する
ことを特徴とする導電性炭化珪素質焼結体の製造方法。 In a sintered body including a conductive phase that is a phase of silicon carbide containing nitrogen as a dopant, at least outside the conductive phase, a silicon carbide phase having a nitrogen concentration lower than the average concentration of nitrogen in the conductive phase. By forming a certain high resistance phase, while producing a sintered body in which the change in specific resistance value due to oxidation is smaller than that of the sintered body without the high resistance phase,
A method for producing a conductive silicon carbide-based sintered body, comprising producing a sintered body having a temperature dependence of specific resistance value varied depending on a ratio of β-type silicon carbide in the sintered body.
ことを特徴とする請求項１に記載の導電性炭化珪素質焼結体の製造方法。 The high resistance phase outside the conductive phase is formed by a high resistance phase forming step of heating a sintered body containing the conductive phase in a non-oxidizing atmosphere substantially free of nitrogen gas. The method for producing a conductive silicon carbide sintered body according to claim 1.
焼結体におけるβ型炭化珪素の割合は、前記反応焼成工程の焼成温度によって変化させる
ことを特徴とする請求項１または請求項２に記載の導電性炭化珪素質焼結体の製造方法。 The sintered body containing the conductive phase is obtained through a reaction firing step in which silicon carbide is reacted and generated from a silicon source and a carbon source,
The method for producing a conductive silicon carbide based sintered body according to claim 1 or 2, wherein a ratio of β-type silicon carbide in the sintered body is changed depending on a firing temperature in the reaction firing step.
ことを特徴とする請求項２に記載の導電性炭化珪素質焼結体の製造方法。 3. The conductive silicon carbide based sintered body according to claim 2, wherein in the high resistance phase forming step, part of β-type silicon carbide is transferred to α-type silicon carbide to form the high resistance phase. 4. Manufacturing method.
少なくとも前記導電性相の外側に、前記導電性相における窒素の平均濃度より窒素の濃度が低い炭化珪素の相である高抵抗相が形成されており、
炭化珪素におけるβ型炭化珪素の割合は、前記高抵抗相より前記導電性相の方が大きい
ことを特徴とする導電性炭化珪素質焼結体。 It is a sintered body containing a conductive phase that is a phase of silicon carbide containing nitrogen as a dopant,
A high resistance phase, which is a silicon carbide phase having a nitrogen concentration lower than the average concentration of nitrogen in the conductive phase, is formed at least outside the conductive phase,
The conductive silicon carbide based sintered body characterized in that the ratio of β-type silicon carbide in silicon carbide is larger in the conductive phase than in the high resistance phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015064930A JP6291446B2 (en) | 2015-03-26 | 2015-03-26 | Method for producing conductive silicon carbide sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015064930A JP6291446B2 (en) | 2015-03-26 | 2015-03-26 | Method for producing conductive silicon carbide sintered body |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016183081A JP2016183081A (en) | 2016-10-20 |
| JP2016183081A5 true JP2016183081A5 (en) | 2017-02-09 |
| JP6291446B2 JP6291446B2 (en) | 2018-03-14 |
Family
ID=57242417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015064930A Active JP6291446B2 (en) | 2015-03-26 | 2015-03-26 | Method for producing conductive silicon carbide sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6291446B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6778644B2 (en) * | 2017-03-29 | 2020-11-04 | 東京窯業株式会社 | Manufacturing method of conductive silicon carbide sintered body and conductive silicon carbide sintered body |
| JP7213607B2 (en) * | 2018-03-28 | 2023-01-27 | 東京窯業株式会社 | Manufacturing method of conductive silicon carbide sintered body and conductive silicon carbide sintered body |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3476153B2 (en) * | 1993-08-12 | 2003-12-10 | 東海高熱工業株式会社 | Conductive silicon carbide ceramic material |
| JPH0789764A (en) * | 1993-09-21 | 1995-04-04 | Tokai Konetsu Kogyo Co Ltd | Silicon carbide heating element |
| JPH0812462A (en) * | 1994-06-22 | 1996-01-16 | Denki Kagaku Kogyo Kk | Electroconductive ceramic, its production and use |
| JPH0826827A (en) * | 1994-07-15 | 1996-01-30 | Denki Kagaku Kogyo Kk | Electrically conductive reactional silicon carbide sintered compact, its production and use |
| JP3681780B2 (en) * | 1995-02-08 | 2005-08-10 | 東京窯業株式会社 | Porous conductive silicon carbide sintered body, its production method and use |
| JP3691536B2 (en) * | 1995-02-08 | 2005-09-07 | 東京窯業株式会社 | Method for producing porous conductive silicon carbide sintered body |
| KR100620493B1 (en) * | 1998-08-07 | 2006-09-05 | 가부시키가이샤 브리지스톤 | Silicon carbide sinter and process for producing the same |
-
2015
- 2015-03-26 JP JP2015064930A patent/JP6291446B2/en active Active
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