JP2016181611A - Substrate cleaning device and substrate cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning device and a substrate cleaning method that can remove pollutant adhering to a substrate without damaging the substrate.SOLUTION: The upper surface of a substrate W is sectioned into cleaning unit areas R1, R2, R3. A cleaning head 40 moves at a speed V1 above the cleaning unit area R1, moves at a speed V2 above the cleaning unit area R2 and moves at a speed V3 above the cleaning unit area R3. The moving speeds V1 to V3 of the cleaning head 40 are set so as to satisfy both of a cleaning condition for sufficiently cleaning the upper surface of the substrate W and a damage prevention condition for preventing application of damage to the substrate W. The damage prevention condition is that the number of droplets impinging on a unit area of each cleaning unit area is equal to or below a preset damage threshold value.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a substrate.

  In manufacturing processes of various substrates such as semiconductor wafers, a substrate cleaning process is performed in order to remove contaminants such as particles adhering to the substrate. In the substrate cleaning apparatus described in Patent Document 1, droplets of a cleaning liquid having a substantially constant diameter are continuously discharged from the plurality of discharge ports of the cleaning head onto the upper surface of the substrate while the cleaning head is moved above the substrate. Is done. When the droplet collides with the substrate, the contaminant on the substrate is physically removed.

JP 2011-29315 A

  In the above substrate cleaning apparatus, the rotation speed of the substrate and the moving speed of the cleaning head are set so that the liquid droplets collide with the upper surface of the substrate without any gap. In this case, depending on the state of the pattern on the substrate, damage such as breakage of the pattern may occur in the substrate.

  An object of the present invention is to provide a substrate cleaning apparatus and a substrate cleaning method capable of removing contaminants attached to a substrate without damaging the substrate.

  (1) A substrate cleaning apparatus according to a first aspect of the present invention includes a rotation holding unit that holds and rotates a substrate, a droplet discharge unit that continuously discharges droplets onto one surface of the substrate rotated by the rotation holding unit, and Droplet movement at a speed set by the movement speed setting unit so that the collision position of the droplet on one surface of the substrate moves in the radial direction of the substrate. A surface of the substrate is divided into a plurality of circular and annular cleaning unit regions having a common center with the rotation center of the substrate, and each cleaning unit region has a unit area. An allowable value for the number of droplets to be collided is set, and the moving speed setting unit sets the number of droplets that collide with the entire cleaning unit area and the unit area of each cleaning unit area to be less than the allowable value. When droplets are ejected to each cleaning unit area Setting the moving speed of the droplet discharge unit.

  In this substrate cleaning apparatus, droplets are continuously discharged from the droplet discharge unit to one surface of the substrate while the substrate is rotated by the rotation holding unit. When the droplet discharge unit is moved by the driving unit, the collision position of the droplet on one surface of the substrate moves in the radial direction of the substrate. The moving speed of the droplet discharge unit when droplets are discharged to each cleaning unit region is the number of droplets that collide with the entire cleaning unit region and the unit area of each cleaning unit region. It is set to be below the allowable value. Thereby, it is possible to prevent the liquid droplets from colliding excessively with each cleaning unit region while securing the cleaning power for each cleaning unit region. Therefore, contaminants attached to the substrate can be removed without damaging the substrate.

  (2) The moving speed setting unit calculates the lower limit value of the moving speed of the droplet discharge unit for each cleaning unit region so that the number of droplets that collide with the unit area of each cleaning unit region is less than the allowable value. Then, the moving speed of the droplet discharge unit when droplets are discharged to each cleaning unit region may be set to a value equal to or higher than the lower limit value calculated for the cleaning unit region.

  In this case, it is possible to prevent the droplets from colliding excessively with each cleaning unit region. Thereby, damage to the substrate is prevented.

  (3) The moving speed setting unit sets an upper limit value of the moving speed of the droplet discharge unit for each cleaning unit region so that the droplets collide with the entire cleaning unit region. You may set the moving speed of the droplet discharge part at the time of a droplet discharge to the value below the upper limit calculated with respect to the said washing | cleaning unit area | region.

  In this case, it is possible to prevent the number of droplets that collide with the unit area of each cleaning unit region from becoming too small. Thereby, the contaminant adhering to a board | substrate is removed appropriately.

  (4) The moving speed setting unit sets the moving speed of the droplet discharge section so that the moving speed of the droplet discharging section decreases stepwise or continuously as the droplet collision position moves away from the center of the substrate. May be.

  When the change in the rotation speed of the substrate is small, the circumferential velocity of the substrate at the droplet collision position increases as the droplet collision position moves away from the center of the substrate. With the above configuration, it is possible to reduce variations in the collision interval of droplets due to the difference in the circumferential speed of the substrate. Thereby, the dispersion | variation in the cleaning power in the one surface of a board | substrate can be made small.

  (5) The substrate processing apparatus sets a rotation speed for setting the rotation speed of the substrate when droplets are discharged from the droplet discharge unit to each cleaning unit region so that the droplets collide with the entire cleaning unit region. The rotation holding unit may further rotate the substrate at a rotation speed set by the rotation speed setting unit.

  In this case, the number of droplets that collide with the unit area of each cleaning unit region can be accurately adjusted.

  (6) A substrate cleaning method according to a second aspect of the present invention includes a step of setting a moving speed of the droplet discharge unit, a step of holding and rotating the substrate by the rotation holding unit, and a step of rotating the substrate rotated by the rotation holding unit. The step of continuously discharging droplets by the droplet discharge unit on one surface and the droplet discharge unit driving unit at a set speed so that the collision position of the droplet on one surface of the substrate moves in the radial direction of the substrate The substrate is divided into a plurality of circular and annular cleaning unit regions having a common center with the center of rotation of the substrate, and each cleaning unit region collides with the unit area. The allowable value of the number of droplets to be set is set, and the step of setting the moving speed includes the step of droplets colliding with the entire cleaning unit region and the number of droplets colliding with the unit area of each cleaning unit region being less than the allowable value. Each wash It includes setting the movement speed of the droplet ejecting section when the droplets are ejected to the unit area.

  According to this substrate cleaning method, droplets are continuously discharged from the droplet discharge unit to one surface of the substrate while the substrate is rotated by the rotation holding unit. When the droplet discharge unit is moved by the driving unit, the collision position of the droplet on one surface of the substrate moves in the radial direction of the substrate. The moving speed of the droplet discharge unit when droplets are discharged to each cleaning unit region is the number of droplets that collide with the entire cleaning unit region and the unit area of each cleaning unit region. It is set to be below the allowable value. Thereby, it is possible to prevent the liquid droplets from colliding excessively with each cleaning unit region while securing the cleaning power for each cleaning unit region. Therefore, contaminants attached to the substrate can be removed without damaging the substrate.

  According to the present invention, contaminants attached to the substrate can be removed without damaging the substrate.

It is a figure which shows the structure of the board | substrate cleaning apparatus which concerns on this Embodiment. It is a partially cutaway sectional view showing the configuration of the cleaning head. It is a figure which shows the lower surface of a washing head. It is a figure for demonstrating the outline | summary of the washing | cleaning process of a board | substrate. It is a figure for demonstrating the moving speed of a cleaning head, and the rotational speed of a board | substrate. It is a figure for demonstrating the collision of the droplet in the upper surface of a board | substrate. It is a figure which shows an example of the upper limit and lower limit of the moving speed of a cleaning head. It is a flowchart for demonstrating an example of a moving speed setting process. It is a figure for demonstrating the other example of a setting of the moving speed of a washing head.

  Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, an optical disk substrate, or the like. The processing liquid is a general term for liquids supplied to the substrate and includes a cleaning liquid and a rinsing liquid.

(1) Overall Configuration FIG. 1 is a diagram showing a configuration of a substrate cleaning apparatus according to the present embodiment. The substrate cleaning apparatus 100 in FIG. 1 performs a cleaning process on the substrate W. The substrate cleaning apparatus 100 includes a rotation holding unit 10, a processing cup 20, a splash guard 30, a cleaning head 40, a head driving unit 60, a rinse nozzle 70, and a control unit 80.

  The rotation holding unit 10 includes a spin base 11, a rotation shaft 12, and a rotation driving unit 13. The spin base 11 has a disk shape and is fixed to the upper end of the rotating shaft 12. A plurality of holding pins 11 a are provided on the spin base 11. The plurality of holding pins 11 a abut against the outer peripheral portion of the substrate W, whereby the substrate W is held horizontally. When the rotation shaft 12 is rotated by the rotation driving unit 13, the substrate W held on the spin base 11 is rotated around a vertical rotation center line. The rotating shaft 12 is provided in a hollow shape, and a cleaning liquid supply pipe 15 is inserted into the rotating shaft 12. A cleaning liquid nozzle 16 is provided at the upper end of the cleaning liquid supply pipe 15. The cleaning liquid supply pipe 15 is connected to a cleaning liquid supply system (not shown).

  The processing cup 20 is provided so as to surround the rotating shaft 12. The processing cup 20 has an annular drainage groove 21 and an annular collection groove 22 provided outside thereof. The processing liquid guided to the drainage groove 21 is discharged through the drainage pipe 21 a, and the processing liquid guided to the recovery groove 22 is recovered through the recovery groove 22. The splash guard 30 is provided above the processing cup 20 so as to be movable up and down. The splash guard 30 receives the processing liquid scattered from the substrate W and selectively guides the processing liquid to the drainage groove 21 and the recovery groove 22 of the processing cup 20.

  The cleaning head 40 discharges the cleaning liquid onto the upper surface of the substrate W held by the rotation holding unit 10. Details of the cleaning head 40 will be described later. The head driving unit 60 holds the cleaning head 40 by the head arm 60a, moves the cleaning head 40 in the vertical direction, and swings the head arm 60a to move the cleaning head 40 above the substrate W to the radius of the substrate W. Move in the direction.

  The rinsing nozzle 70 is connected to the rinsing liquid supply source D1, and discharges the rinsing liquid (in this example, pure water) supplied from the rinsing liquid supply source D1 onto the upper surface of the substrate W held by the rotation holding unit 10. . The control unit 80 includes a computer including a CPU (Central Processing Unit) and controls the operation of each component of the substrate cleaning apparatus 100. An input unit 81 and a display unit 82 are connected to the control unit 80. The input unit 81 inputs various information to the control unit 80 based on an operation by the user. The display unit 82 displays various information regarding the cleaning process of the substrate W.

  Details of the cleaning head 40 will be described. FIG. 2 is a partially cutaway sectional view showing the configuration of the cleaning head 40, and FIG. 3 is a view showing the lower surface of the cleaning head 40. As shown in FIG. 2, the cleaning head 40 includes a hollow main body 41 and a piezoelectric element (piezo element) 42. A supply pipe 43 and a discharge pipe 44 are connected to the main body 41. The supply pipe 43 is connected to the cleaning liquid supply source D2, and the discharge pipe 44 extends outside the substrate cleaning apparatus 100. The supply pipe 43 is provided with a pressure feed pump 45 and a filter 46. The pressure pump 45 pumps the cleaning liquid (in this example, pure water) from the cleaning liquid supply source D2 to the main body 41 through the supply pipe 43. The filter 47 removes foreign matters from the cleaning liquid that passes through the supply pipe 43. A valve 49 is provided in the discharge pipe 44. By opening the valve 49, the cleaning liquid in the main body 41 is discharged through the discharge pipe 44.

  A plurality of discharge ports DH are provided at the bottom of the main body 41. As shown in FIG. 3, the plurality of ejection openings DH form a plurality of rows NR parallel to each other. The plurality of ejection ports DH in each row NR are arranged so as to be arranged at regular intervals and on a straight line. The number of discharge ports DH is preferably 60 or more and 300 or less. In this example, each of the four rows NR includes 20 ejection ports DH, and the total number of ejection ports DH is 80.

  The piezoelectric element 42 in FIG. 2 is fixed to the upper surface of the main body 41 and connected to the power source 42a. The power source 42 a applies an AC voltage having a set frequency to the piezoelectric element 42. As a result, the cleaning liquid in the main body 41 is vibrated at the above frequency. Thereby, droplets of the cleaning liquid are continuously discharged from the plurality of discharge ports DH. The ejected liquid droplet has a substantially constant diameter (for example, about 20 μm) depending on the diameter of the ejection port DH. The speed of the discharged liquid droplets depends on the supply pressure of the cleaning liquid by the pressure pump 45. For example, when the speed of the liquid droplet is input by operating the input unit 81 by the user, the supply pressure of the cleaning liquid by the pressure pump 45 is adjusted so that the liquid droplet is discharged at the input speed.

  The cleaning process of the substrate W in the substrate cleaning apparatus 100 will be described. FIG. 4 is a diagram for explaining the outline of the cleaning process of the substrate W. First, the substrate W is rotated while being held by the rotation holding unit 10 in FIG. 1, and the rinse liquid is supplied to the upper surface of the substrate W from the rinse nozzle 70. Thus, a rinse liquid film (hereinafter referred to as cover rinse) is formed so as to cover the upper surface of the substrate W. With the rinsing liquid continuously supplied, the cleaning head 40 is moved from above the central portion of the substrate W to above the peripheral portion of the substrate W as shown by a dotted line in FIG. A droplet is ejected. Thereby, the droplet of the cleaning liquid can collide with the upper surface of the substrate W. In this case, contaminants attached to the upper surface of the substrate W are physically removed by the kinetic energy of the droplets. The cover rinse acts to reduce the impact of the droplet. During the cleaning process, a cleaning liquid (for example, pure water) may be discharged from the cleaning liquid nozzle 16 of FIG.

(2) Movement speed of the cleaning head As described above, the cleaning head 40 moves from above the central portion of the substrate W to above the peripheral portion of the substrate W, so that the droplet collision position on the substrate W changes to the substrate W. It moves from the central part to the peripheral part. In the present embodiment, the moving speed of the cleaning head 40 is changed by the relative position of the cleaning head 40 with respect to the substrate W, and the rotational speed of the substrate W is changed by the relative position of the cleaning head 40 with respect to the substrate W.

  FIG. 5 is a diagram for explaining the moving speed of the cleaning head 40 and the rotational speed of the substrate W. FIG. FIG. 5A shows the upper surface of the substrate W, and FIG. 5B shows the side surface of the substrate W. In this example, the upper surface of the substrate W is divided into a plurality of cleaning unit regions. Each cleaning unit region is rotationally symmetric with respect to the center C of the substrate W and has a certain width in the circumferential direction of the substrate W. 5A and 5B, the upper surface of the substrate W is divided into a circular cleaning unit region R1 and annular cleaning unit regions R2 and R3. The cleaning unit regions R1, R2, and R3 are arranged in the radial direction of the substrate W from the center C of the substrate W to the peripheral edge of the substrate W, and the centers of the cleaning unit regions R1, R2, and R3 coincide with the center C of the substrate W. To do.

  In the example of FIGS. 5A and 5B, the cleaning head 40 moves above the cleaning unit region R1 at the speed V1, moves above the cleaning unit region R2 at the speed V2, and the cleaning unit region R3. Is moved at a speed V3. For example, the speed V2 is lower than the speed V1, and the speed V3 is lower than the speed V2. In this case, the moving speed of the cleaning head 40 decreases stepwise from above the central portion of the substrate W to above the peripheral portion.

  When the cleaning head 40 moves above the cleaning unit region R1, droplets are ejected from the cleaning head 40 to the cleaning unit region R1, and when the cleaning head 40 moves above the cleaning unit region R2, the cleaning head 40 Droplets are discharged from the cleaning head 40 to the cleaning unit region R2, and when the cleaning head 40 moves above the cleaning unit region R3, the droplets are discharged from the cleaning head 40 to the cleaning unit region R3.

  In the example of FIGS. 5A and 5B, when a droplet is ejected to the cleaning unit region R1, the rotation speed of the substrate W is adjusted to r1, and the droplet is ejected to the cleaning unit region R2. When discharged, the rotation speed of the substrate W is adjusted to r2, and when the droplet is discharged to the cleaning unit region R3, the rotation speed of the substrate W is adjusted to r3. For example, speed r2 is lower than speed r1, and speed r3 is lower than speed r2.

  The speeds V1 to V3 and r1 to r3 are set so as to satisfy both the cleaning conditions for sufficiently cleaning the upper surface of the substrate W and the damage prevention conditions for preventing the substrate W from being damaged. Here, the damage of the substrate W means deformation or breakage of a pattern formed on the upper surface of the substrate W.

  The cleaning condition is that droplets can collide with each cleaning unit region without any gap. FIG. 6 is a diagram for explaining the collision of droplets on the upper surface of the substrate W. FIG. In FIG. 6, in order to facilitate understanding, the circumferential direction of the substrate W is represented by a horizontal axis, and the radial direction of the substrate W is represented by a vertical axis. As shown in FIG. 6, on the upper surface of the substrate W, one droplet can be regarded as colliding with a circular region (hereinafter referred to as a droplet collision region) RG having the same diameter Ts as the droplet. . As described above, the diameter of the droplets ejected from the cleaning head 40 is substantially constant. Therefore, in this example, the diameter Ts of the droplet collision region RG is considered to be constant. In order to cause the droplets to collide with the entire upper surface of the substrate W without any gap, the distance T1 between the central portions of the droplet collision regions RG adjacent in the radial direction of the substrate W and the liquid adjacent in the circumferential direction of the substrate W It is preferable that the distance T2 between the center portions of the droplet collision region RG is less than or equal to one half of the diameter Ts. In the example of FIG. 6, the distances T1 and T2 are each half of the diameter Ts.

  The distance T1 depends on the moving speed of the cleaning head 40 in the radial direction of the substrate W. The higher the moving speed of the cleaning head 40, the larger the distance T1. The distance T2 depends on the rotation speed of the substrate W. The higher the rotation speed of the substrate W, the larger the distance T2. In the present embodiment, the upper limit value of the moving speed of the cleaning head 40 is set so that the distance T1 is less than or equal to one half of the diameter Ts, and the distance T2 is less than or equal to one half of the diameter Ts. In addition, the rotation speed of the substrate W is determined. The greater the number of ejection ports DH (FIG. 3) of the cleaning head 40, the higher the density of the collision area RG. Therefore, the rotation speed of the substrate W and the moving speed of the cleaning head 40 can be set high.

  The damage prevention condition is that the number of droplets that collide with the unit area of each cleaning unit region is equal to or less than a preset threshold value (hereinafter referred to as a damage threshold value). As the number of droplets that collide with the unit area of one cleaning unit region increases, the possibility that the cleaning unit region will be damaged increases. The damage threshold varies depending on the shape, position, line width, type, and the like of the pattern formed in each cleaning unit region. The damage threshold is obtained by, for example, experiments or simulations.

As represented by the following formula (1), the number Np of droplets that collide with the unit area of each cleaning unit region is obtained from the number Nt of droplets discharged to each cleaning unit region and the area AR of each cleaning unit region. It is done.
Np = Nt / AR (1)

The area AR of Expression (1) can be uniquely determined based on the division of the cleaning unit region. The number of droplets Nt in the formula (1) is expressed by the following formula (2). The flow rate Fr of the cleaning liquid pumped by the pumping pump 45 in FIG. 2 and the cleaning head 40 pass above each cleaning unit area. Time (time during which droplets are ejected to each cleaning unit area) Tt and the volume Vm of one droplet.
Nt = Fr · Tt / Vm (2)

The flow rate Fr in equation (2) can be detected by a flow meter (not shown). As described above, since the diameter of the droplet depends on the diameter of the discharge port DH (FIG. 2) of the cleaning head 40, an approximate value of the volume Vm in the equation (2) is obtained based on the diameter of the discharge port DH. Can do. The time Tt in the equation (2) is expressed by the following equation (3), the moving speed Vt of the cleaning head 40 passing over each cleaning unit region and the width of each cleaning unit region in the radial direction of the substrate W. It is obtained from Lr.
Tt = Lr / Vt (3)

The width Lr in Expression (3) can be uniquely determined based on the division of the cleaning unit region. From the expressions (1) to (3), as represented by the following expression (4), the number Np of droplets that collide with the unit area of each cleaning unit area and the movement of the cleaning head 40 corresponding to each cleaning unit area A relationship with velocity Vt is obtained.
Np = (Fr · Lr · AR) / (Vm · Vt) (4)

  As represented by Expression (4), the lower the moving speed Vt, the greater the number of droplets Np. In order to satisfy the damage prevention condition, the number of droplets Np in Expression (4) needs to be equal to or less than the damage threshold. Therefore, the moving speed Vt when the number of droplets Np in Expression (4) is the damage threshold value is the lower limit value of the moving speed of the cleaning head 40.

  Thus, the upper limit value of the moving speed of the cleaning head 40 corresponding to each cleaning unit region is obtained so that the cleaning condition is satisfied, and the cleaning head corresponding to each cleaning unit region is satisfied so that the damage prevention condition is satisfied. A lower limit value of 40 moving speeds is obtained. FIG. 7 is a diagram illustrating an example of an upper limit value and a lower limit value of the moving speed of the cleaning head 40. In FIG. 7, the horizontal axis indicates the moving distance of the cleaning head 40 from above the center of the substrate W, and the vertical axis indicates the moving speed of the cleaning head 40. The example of FIG. 7 corresponds to the example of FIG. 5, and the distances d1, d2, and d3 represent the distances from the center C (FIG. 5) of the substrate W to the outer peripheries of the cleaning unit regions R1, R2, and R3, respectively.

  In the example of FIG. 7, the upper limit values of the moving speed of the cleaning head 40 corresponding to the cleaning unit regions R1, R2, and R3 are values V1a, V2a, and V3a, respectively, and the cleaning corresponding to the cleaning unit regions R1, R2, and R3 are performed. Lower limit values of the moving speed of the head 40 are values V1b, V2b, and V3b, respectively. The moving speeds V1, V2, and V3 of the cleaning head 40 are set within a range between the upper limit value and the lower limit value, respectively.

(3) Moving Speed Setting Process The control unit 80 in FIG. 1 performs a moving speed setting process for setting the moving speed of the cleaning head 40. FIG. 8 is a flowchart for explaining an example of the moving speed setting process. In the example of FIG. 8, first, the user determines the speed of liquid droplets discharged from the cleaning head 40 (hereinafter referred to as “liquid droplet speed”), and operates the input unit 81 so that the value is input. To do. Thereby, the control part 80 acquires a droplet speed (step S1). The higher the droplet velocity, the greater the kinetic energy of each droplet. Therefore, the higher the droplet velocity, the higher the cleaning power by the droplets.

  Next, the user divides the upper surface of the substrate W into a plurality of cleaning unit regions based on the characteristics of the substrate W to be cleaned, and inputs region specifying information for specifying the plurality of cleaning unit regions. The input unit 81 is operated as described above. Thereby, the control part 80 acquires area | region specific information (step S2). The characteristics of the substrate W include the shape, position, line width, and type of the pattern formed on the substrate W. The area specifying information represents, for example, the distance from the center C of the substrate to the outer periphery of each cleaning unit area (for example, distances d1 to d3 in FIG. 7).

  Next, the control unit 80 generates region information that represents each of the plurality of cleaning unit regions in a coordinate system unique to the substrate cleaning apparatus 100 based on the acquired region specifying information (step S3). Next, the control unit 80 cleans the cleaning head 40 corresponding to each cleaning unit region so that the cleaning condition is satisfied based on the droplet velocity acquired in step S1 and the region information generated in step S3. Is calculated (step S4), and the rotation speed of the substrate W corresponding to each cleaning unit region is calculated (step S5).

  Next, the user operates the input unit 81 so that the damage threshold value of each cleaning unit region is input. The damage threshold is determined to correspond to the above droplet velocity. Thereby, the control part 80 acquires the damage threshold value of each washing | cleaning unit area | region (step S6). Next, based on the region information generated in step S3 and the damage threshold value of each cleaning unit region acquired in step S6, the control unit 80 sets each cleaning unit region so that the damage prevention condition is satisfied. A lower limit value of the moving speed of the corresponding cleaning head 40 is calculated (step S7). Next, the control unit 80 displays a moving speed setting screen for setting the moving speed of the cleaning head 40 on the display unit 81 in FIG. 1 (step S8). The moving speed setting screen shows the upper limit value of the moving speed calculated in step S4 and the lower limit value of the moving speed calculated in step S6.

  The user refers to the displayed moving speed setting screen, determines the moving speed of the cleaning head 40 corresponding to each cleaning unit area within the range between the upper limit value and the lower limit value, and the value is input. The input unit 81 is operated as described above. Thereby, the control part 80 acquires the moving speed of the washing | cleaning head 40 (step S9), and complete | finishes a moving speed setting process. During the cleaning process of the substrate W, the control unit 80 controls the head driving unit 60 so that the cleaning head 40 is moved at the moving speed set in the moving speed setting process.

(4) Effects In the substrate cleaning apparatus 100 according to the present embodiment, it is possible to cause a droplet to collide with each cleaning unit region without any gap, and a droplet that collides with the unit area of each cleaning unit region. The moving speed of the cleaning head 40 is set so that the number is less than or equal to the damage threshold. Thereby, it is possible to prevent the liquid droplets from colliding excessively with each cleaning unit region while securing the cleaning power for each cleaning unit region. Therefore, contaminants attached to the substrate W can be removed without damaging the substrate W.

  In the present embodiment, the lower limit value of the moving speed of the cleaning head 40 corresponding to each cleaning unit region is calculated so that the number of droplets that collide with the unit area of each cleaning unit region is equal to or less than the damage threshold. Then, the moving speed of the cleaning head 40 when droplets are discharged to each cleaning unit region is set to a value equal to or higher than the lower limit value calculated for the cleaning unit region. As a result, excessive droplets are prevented from colliding with each cleaning unit region, so that damage to the substrate W is prevented.

  Further, in the present embodiment, an upper limit value of the moving speed of the cleaning head 40 corresponding to each cleaning unit region is set so that the liquid droplets collide with each cleaning unit region without any gap, and each cleaning unit region is set to each cleaning unit region. The moving speed of the cleaning head 40 when droplets are ejected is set to a value equal to or lower than the upper limit value calculated for the cleaning unit region. This prevents the number of droplets that collide with the unit area of each cleaning unit region from becoming too small. Thereby, the contaminants adhering to the substrate W are appropriately removed.

  In the present embodiment, the moving speed of the cleaning head 40 is set such that the moving speed of the cleaning head 40 decreases stepwise or continuously as the droplet collision position moves away from the center of the substrate W. Thereby, the dispersion | variation in the cleaning power in the one surface of the board | substrate W can be made small.

  In the present embodiment, the rotation speed of the substrate W when the droplet is ejected from the cleaning head 40 to each cleaning unit region is set so that the droplet collides with the entire cleaning unit region. Thereby, the number of droplets that collide with the unit area of each cleaning unit region can be adjusted with high accuracy.

(5) Other embodiments (5-1)
In the above embodiment, the rotation speed of the substrate W is set for each cleaning unit area, but the rotation speed of the substrate W common to all the cleaning unit areas may be set. The circumferential speed of the region near the center of the substrate W is lower than the circumferential speed of the region far from the center of the substrate W. Therefore, in the region near the peripheral edge of the substrate W, the number of droplets that collide per unit area tends to decrease. Therefore, a rotation speed that satisfies the cleaning condition for the outermost cleaning unit area (in the example of FIG. 5, the cleaning unit area R3) may be set as a common rotation speed.

(5-2)
In the above embodiment, the cleaning head 40 moves from above the central portion of the substrate W to above the peripheral portion of the substrate W, but the movement direction of the cleaning head 40 is not limited to this. The cleaning head 40 may move from above the peripheral portion of the substrate W to above the central portion of the substrate W. Also in this case, the moving speed of the cleaning head 40 is set so that the above-described cleaning conditions and damage prevention conditions are satisfied.

(5-3)
In the above embodiment, the moving speeds of the cleaning heads 40 corresponding to the plurality of cleaning unit regions are different from each other, but the present invention is not limited to this. FIG. 9 is a diagram for explaining another setting example of the moving speed of the cleaning head 40. In the example of FIG. 9A and the example of FIG. 9B, the classification of the cleaning unit area and the upper limit value and the lower limit value of the moving speed of the cleaning head 40 are the same as in the example of FIG. As in the example of FIG. 9A, the moving speed of the cleaning head 40 may be set to a constant value Vx between the upper limit values V1a, V2a, V3a and the lower limit values V1b, V2b, V3b. Further, as in the example of FIG. 9B, the moving speed of the cleaning head 40 may be set to gradually decrease between the upper limit values V1a, V2a, and V3a and the lower limit values V1b, V2b, and V3b. .

(5-4)
In the above embodiment, the droplet velocity, the cleaning unit area division, and the damage threshold are determined by the user, but the present invention is not limited to this. For example, a plurality of cleaning conditions are presented to the user, and one of them is selected by the user. In order to correspond to each cleaning condition, the droplet speed, the classification of the cleaning unit area, and the damage threshold value are stored in advance. When the user selects the cleaning condition, the upper limit value and the lower limit value of the moving speed of the cleaning head 40 are calculated based on the droplet speed corresponding to the cleaning condition, the classification of the cleaning unit area, and the damage threshold value. The Alternatively, when the cleaning process is performed under certain conditions, fixed settings may be used as the droplet velocity, the cleaning unit region classification, and the damage threshold.

(5-5)
In the above embodiment, the moving speed of the cleaning head 40 is finally determined by the user, but the present invention is not limited to this. The moving speed of the cleaning head 40 corresponding to each cleaning unit region may be automatically determined so that the cleaning condition and the damage prevention condition are satisfied.

(5-6)
In the above embodiment, pure water is used as the cleaning liquid, but the present invention is not limited to this. For example, a cleaning chemical may be used as the cleaning liquid.

(6) Correspondence between each constituent element of claims and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each constituent element of the embodiment will be described. It is not limited to examples.

  In the above embodiment, the substrate cleaning apparatus 100 is an example of a substrate cleaning apparatus, the rotation holding unit 10 is an example of a rotation holding unit, the cleaning head 40 is an example of a droplet discharge unit, and the control unit 80 is It is an example of a moving speed setting part and a rotational speed setting part, and the head drive part 60 is an example of a drive part.

  As each constituent element in the claims, various other constituent elements having configurations or functions described in the claims can be used.

  The present invention can be effectively used for various substrate cleaning apparatuses.

DESCRIPTION OF SYMBOLS 10 Rotation holding | maintenance part 20 Processing cup 30 Splash guard 40 Cleaning head 41 Main body part 42 Piezoelectric element 60 Head drive part 70 Rinse nozzle 80 Control part 81 Input part 82 Display part 100 Substrate cleaning apparatus DH Discharge port R1, R2, R3 Cleaning unit area | region W substrate

Claims (6)

A rotation holding unit for holding and rotating the substrate;
A droplet discharge unit that continuously discharges droplets on one surface of the substrate rotated by the rotation holding unit;
A moving speed setting unit for setting a moving speed of the droplet discharge unit;
A drive unit that moves the droplet discharge unit at a speed set by the moving speed setting unit so that a droplet collision position on the one surface of the substrate moves in a radial direction of the substrate;
The one surface of the substrate is divided into a plurality of circular and annular cleaning unit regions having a common center with the rotation center of the substrate,
For each cleaning unit area, an allowable number of droplets that should collide with the unit area is set,
The moving speed setting unit applies liquid to each cleaning unit region so that the droplets collide with the entire cleaning unit region and the number of droplets colliding with the unit area of each cleaning unit region is equal to or less than the allowable value. A substrate cleaning apparatus for setting a moving speed of the droplet discharge unit when a droplet is discharged. The moving speed setting unit calculates a lower limit value of the moving speed of the droplet discharge unit for each cleaning unit region so that the number of droplets colliding with the unit area of each cleaning unit region is equal to or less than the allowable value. The substrate cleaning according to claim 1, wherein the moving speed of the droplet discharge unit when droplets are discharged to each cleaning unit region is set to a value equal to or higher than a lower limit value calculated for the cleaning unit region. apparatus. The moving speed setting unit sets an upper limit value of the moving speed of the droplet discharge unit for each cleaning unit region so that the droplets collide with the entire cleaning unit region, and sets a liquid value in each cleaning unit region. 3. The substrate cleaning apparatus according to claim 1, wherein a moving speed of the droplet discharge unit when the droplet is discharged is set to a value equal to or lower than an upper limit value calculated for the cleaning unit region. The moving speed setting unit sets the moving speed of the droplet discharge unit so that the moving speed of the droplet discharging unit decreases stepwise or continuously as the droplet collision position moves away from the center of the substrate. The substrate cleaning apparatus according to any one of claims 1 to 3. A rotation speed setting unit that sets a rotation speed of the substrate when droplets are discharged from the droplet discharge unit to each cleaning unit region so that the droplets collide with the entire cleaning unit region;
The substrate cleaning apparatus according to claim 1, wherein the rotation holding unit rotates the substrate at a rotation speed set by the rotation speed setting unit. Setting a moving speed of the droplet discharge unit;
Holding and rotating the substrate by the rotation holding unit;
Continuously discharging droplets by the droplet discharge unit onto one surface of the substrate rotated by the rotation holding unit;
Moving the droplet discharger by a driving unit at a set speed so that the collision position of the droplet on the one surface of the substrate moves in the radial direction of the substrate,
The one surface of the substrate is divided into a plurality of circular and annular cleaning unit regions having a common center with the rotation center of the substrate,
For each cleaning unit area, an allowable number of droplets that should collide with the unit area is set,
The step of setting the moving speed includes the step of setting each cleaning unit region so that the droplets collide with the entire cleaning unit region and the number of droplets colliding with the unit area of each cleaning unit region is equal to or less than the allowable value. A substrate cleaning method comprising: setting a moving speed of the droplet discharge unit when droplets are discharged to the substrate.

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