JP2016178404A - Manufacturing method for vibrator and manufacturing method for oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method capable of achieving a highly reliable vibrator or oscillator by reducing a residue of a foreign matter in a cavity.SOLUTION: The manufacturing method for vibrator includes: vibrating piece formation process for forming a first vibrating piece with an excitation electrode at a substrate; a strong excitation process for obtaining a second vibrating piece by applying larger electric power than predetermined operation power to the first vibrating piece for strong excitation; and a storage process for storing the second vibrating piece in a container.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vibrator and an oscillator manufacturing method.

  In various electronic devices, a plurality of vibration devices represented by crystal oscillators are used. As disclosed in Patent Document 1, this vibrating device has a configuration in which a piezoelectric vibrating piece and an electronic component element such as an IC chip are accommodated in a stacked state in a cavity that is airtightly held by a cover. Yes.

  In the vibrating device disclosed in Patent Document 1, a small amount of foreign matter may adhere to the surface of the quartz piece as the vibrating piece. Adhering foreign matter is one of the causes of fluctuations in the vibration characteristics of the crystal piece, and as a method for removing it, it is known that the foreign matter is shaken off from the crystal piece by strong excitation (overdrive). However, in the vibrating device disclosed in Patent Document 1, a large amount of electric power applied in strong excitation is also applied to the electrically connected electronic component element, which may cause damage to the electronic component element. It was.

  On the other hand, in the piezoelectric vibrating device disclosed in Patent Document 2, a quartz crystal vibrating piece and an IC chip are accommodated in a cavity, and after the quartz vibrating piece is strongly excited, the quartz vibrating piece and the IC chip are electrically connected by wire bonding. Thus, the IC chip is prevented from being damaged by a large electric power in strong excitation.

JP 2004-297737 A JP 2007-235544 A

  However, in the piezoelectric vibration device disclosed in Patent Document 2, since strong excitation is performed after the quartz crystal vibrating piece is housed in the cavity, the foreign matter shaken off from the quartz crystal vibrating piece may stay in the cavity. Therefore, when foreign matter remains in the cavity, after the piezoelectric vibrating device is completed, the foreign matter remaining in the cavity may adhere to the crystal vibrating piece and deteriorate the vibration characteristics. .

  Accordingly, it is an object of the present invention to provide a manufacturing method capable of reducing a residue of foreign matters in a cavity and obtaining a highly reliable vibrator or oscillator.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example 1] A vibrator manufacturing method according to this application example includes a vibration piece forming step of forming a first vibration piece having an excitation electrode on a substrate, and the first vibration piece is larger than a predetermined operating power. The method includes a strong excitation step of applying electric power and strong excitation to obtain a second vibrating piece, and an accommodating step of accommodating the second vibrating piece in a container.

  According to the method for manufacturing a vibrator of this application example, the second vibrating piece obtained by strongly exciting the first vibrating piece is obtained, and the obtained second vibrating piece is accommodated in the container in the accommodating step. Is done. Therefore, since the foreign matter adhering to the second vibrating piece is reduced by strong excitation, the foreign matter attached to the second vibrating piece may be brought into the container of the vibrator obtained in the housing process. Can be reduced. Accordingly, a vibrator having stable vibration characteristics can be obtained.

  Application Example 2 In the application example described above, the strong excitation process includes an inspection process for inspecting the second vibrating piece.

  According to the application example described above, by including an inspection process in the strong excitation process, a housing process in which a defective vibration piece generated when a large amount of power is applied to the first vibration piece is a vibrator complete product. Can be reduced. Accordingly, it is possible to reduce the defect rate in the finished vibrator, and to realize a reduction in defect cost.

  Application Example 3 In the application example described above, a plurality of the first vibrating bars are formed on the substrate.

  According to the application example described above, high productivity can be obtained by forming the resonator element using a so-called wafer substrate.

  Application Example 4 An oscillator manufacturing method according to this application example includes a resonator element forming step of forming a first resonator element having an excitation electrode on a substrate, and a power greater than a predetermined operating power in the first resonator element. And a strong excitation process for obtaining a second vibration piece by strong excitation, and a housing process for housing the second vibration piece and the semiconductor device in a container.

  According to the method for manufacturing an oscillator of this application example, the second vibration piece obtained by strongly exciting the first vibration piece is obtained, and the obtained second vibration piece is housed in the container in the housing step. The Therefore, since the foreign matter adhering to the second vibrating piece is reduced by strong excitation, the possibility that the foreign matter adhering to the second vibrating piece is brought into the container of the oscillator obtained in the housing process is reduced. it can. Therefore, an oscillator having stable vibration characteristics can be obtained.

  Application Example 5 In the application example described above, the strong excitation process includes an inspection process for inspecting the second vibrating piece.

  According to the application example described above, by including the inspection process in the strong excitation process, the defective vibration piece generated when the large power is applied to the first vibration piece is included in the housing process in which the oscillator is a finished product. Sending can be reduced. Therefore, it is possible to reduce the defect rate in the oscillator complete product in which the semiconductor device is accommodated in addition to the resonator element, and the defect cost can be reduced.

The vibrator | oscillator obtained by the manufacturing method of the vibrator | oscillator concerning 1st Embodiment is shown, (a) is a planar external view, (b) is sectional drawing of the AA 'part shown to (a). 3 is a flowchart showing a method for manufacturing a vibrator according to the first embodiment. FIG. 4A shows a vibrating piece forming step of the vibrator according to the first embodiment, wherein FIG. 5A is an external perspective view of a wafer having a plurality of vibrating elements, FIG. 5B is an enlarged plan view of a portion B shown in FIG. , (D) is an enlarged plan view showing a state where an electrode is formed on the vibration element. FIG. 3 is an external perspective view showing a strong excitation process of the vibrator according to the first embodiment. Sectional drawing which shows the accommodation process of the vibrator | oscillator which concerns on 1st Embodiment. The oscillator obtained by the manufacturing method of the oscillator concerning a 2nd embodiment is shown, (a) is a plane appearance figure and (b) is a sectional view of a CC 'section shown in (a). 9 is a flowchart showing a method for manufacturing an oscillator according to the second embodiment. Sectional drawing which shows the accommodation process of the oscillator which concerns on 2nd Embodiment.

  Embodiments according to the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1 shows a schematic configuration of a vibrator obtained by the vibrator manufacturing method according to the first embodiment, (a) is an external plan view in which a lid is omitted, and (b) is an AA ′ shown in (a). It is sectional drawing of a part.

  As shown in FIG. 1B, the vibrator 1000 shown in FIG. 1 includes a vibrating piece 100, a package 200 having a recessed space 200a in which the vibrating piece 100 can be accommodated, a lid 300, a package 200, and a lid 300. And a sealing member 400 that seals the recessed space 200a.

  The resonator element 100 includes the piezoelectric element 10, a first electrode 21 formed on the first main surface 10 a of the piezoelectric element 10, and a second electrode 22 formed on the second main surface 10 b of the piezoelectric element 10. ing. The piezoelectric element 10 is not particularly limited as long as it is a material having piezoelectricity such as quartz, ceramics, PZT, etc., but in the present embodiment, description will be made using quartz. Hereinafter, the piezoelectric element 10 is referred to as a crystal element 10.

  As shown in FIG. 1A, the first electrode 21 includes an excitation electrode 21a having a substantially rectangular planar shape on the first main surface 10a and a second main surface serving as the back surface of the first main surface 10a. A connection electrode 21b formed on the surface 10b and an extending portion 21c that connects the excitation electrode 21a and the connection electrode 21b are provided. In addition, the second electrode 22 has a substantially rectangular planar shape in the present embodiment so as to overlap the second principal surface 10b with the excitation electrode 21a formed on the first principal surface 10a in plan view. The connection electrode 22b and the extending portion 22c that connects the excitation electrode 22a and the connection electrode 22b are provided.

  The package 200 is formed of an insulating material such as ceramic, resin, or glass. A connection electrode 610 is formed on the bottom portion 200b of the recess space 200a of the package 200, and external connection electrodes 620a and 620b electrically connected to the connection electrode 610 by wiring formed inside the package 200 (not shown). It is formed on the outer bottom surface 200c of the 200.

  The resonator element 100 is disposed in the concave space 200 a of the package 200 so that the connection electrodes 21 b and 22 b face the connection electrode 610, and is connected and disposed by a conductive bonding member 500. Then, the lid 300 is fixed to the upper end surface 200d having a frame-like planar shape on the opening side of the recessed space 200a of the package 200 via the seal member 400, and the recessed space 200a is hermetically sealed. The recessed space 200a is preferably hermetically sealed by, for example, vacuum sealing or filling with an inert gas.

  As described above, the resonator element 100 included in the resonator 1000 according to the present embodiment exemplifies a so-called AT resonator element as illustrated in FIG. 1, but is not limited thereto. It may be a gyro element.

  FIG. 2 is a flowchart showing a method for manufacturing the above-described vibrator 1000. 2A shows a method of manufacturing the vibrator according to the first embodiment, FIG. 2B shows details of the forced excitation step (S20) shown in FIG. 2A, and FIG. These are the flowcharts which show the detail of the accommodation process (S40) shown to Fig.2 (a).

  As shown in FIG. 2A, in the method for manufacturing the vibrator 1000 according to this embodiment, the vibration piece forming step (S10) is started.

(Vibration piece forming process)
In the vibrating piece forming step (S10), as shown in FIG. 3A, a disc-shaped quartz substrate 2000 (an example of a substrate) having a desired thickness, a so-called quartz wafer is prepared. Hereinafter, the crystal substrate 2000 is referred to as a wafer 2000.

  As shown in FIG. 3B, which is an enlarged view of a portion B shown in FIG. 3A, a plurality of through portions 2010a are formed on the wafer 2000 by patterning and etching by photolithography, for example. As a result, a vibration element wafer 2010 is obtained in which a plurality of crystal element portions 2010b and a plurality of break-off portions 2010c as connection portions with the wafer 2000 are formed.

  A conductive metal film is formed on the surface of the obtained vibration element wafer 2010 by vapor deposition or sputtering, and is formed on the vibration element wafer 2010 by patterning and etching by photolithography as shown in FIG. The first electrode 21 is formed on one surface of the crystal element portion 2010b. As shown in FIG. 3D, the second electrode 22 and the first electrode 21 on the other surface of the crystal element portion 2010b. A vibrating piece forming step (S10) for obtaining a first vibrating piece wafer 2020 having a plurality of first vibrating piece portions 2110 as the first vibrating piece formed with the connection electrode 21b is performed.

(Strong excitation process)
As shown in FIGS. 3C and 3D, a plurality of first vibrating piece portions 2110 having the first electrode 21 and the second electrode 22 obtained by the vibrating piece forming step (S10) are provided. The first vibrating reed wafer 2020 is moved to the strong excitation step (S20). As shown in FIG. 2B, the strong excitation step (S20) includes a power application step (S21), an inspection step (S22), and a defective product removal step (S23).

(Power application process)
First, the power application step (S21) is performed. In the power application step (S21), the connection terminals 3200a and 3200b connected to the strong excitation control unit 3100 included in the strong excitation device 3000 as shown in FIG. Then, the contact electrodes 21 b and 22 b are brought into contact with each other, and a predetermined large power is applied to the first electrode 21 and the second electrode 22 from the strong excitation control unit 3100. Then, the large vibrations of the first vibrating piece 2110 are excited by the large electric power supplied to the excitation electrodes 21a and 22a, and at least a part of the foreign matter attached to the first electrode 21 and the second electrode 22 is shaken off. Is done. In addition, the adhesion between the crystal element 10 and the electrodes 21 and 22 can be improved.

  After applying high power to the first vibrating piece 2110 for a predetermined time, the connection terminals 3200a and 3200b are separated from the connecting electrodes 21b and 22b, and the power application step (S21) to the first vibrating piece 2110 is completed. Thus, a second vibrating piece portion 2120 as the second vibrating piece is formed. Then, the connection terminals 3200a and 3200b are moved to the next first vibrating piece portion 2110, the power application step (S21) is executed, and sequentially with respect to all of the first vibrating piece portions 2110 provided in the first vibrating piece wafer 2020. Then, the power application step (S21) is performed, and a second vibrating reed wafer 2021 including a plurality of second vibrating reed portions 2120 is obtained. And it transfers to an inspection process (S22).

(Inspection process)
In the inspection step (S22), in the power application step (S21), the occurrence of damage to some of the second vibrating piece portions 2120 is predicted by applying electric power exceeding the predetermined operating power of the second vibrating piece portions 2120. Therefore, it is checked whether a predetermined operation can be obtained. In the inspection step (S22), although not shown, an inspection terminal connected to the inspection apparatus is brought into contact with the connection electrodes 21b and 22b, and a predetermined power is applied to excite the desired quality, for example, from the obtained oscillation signal. The frequency and dropped series resistance value are detected to determine pass / fail.

(Defective product removal process)
The second vibrating reed wafer 2021 in which the quality of each second vibrating reed portion 2120 is determined to be good by the inspection step (S22) proceeds to the defective product removing step (S23). In the defective product removing step (S23), as shown in FIG. 4B, the defective vibrating piece portion 2120F determined to be defective is removed from the second vibrating piece wafer 2021 by being broken off from the folding portion 2010c. The If it is determined that the defective vibrating piece portion 2120F is defective in the above-described inspection step (S22), the position information of the defective vibrating piece portion 2120F in the second vibrating piece wafer 2021 in the vibrating piece wafer 2020 in an inspection apparatus (not shown). Is stored, and an arrow direction pressing F shown in the figure is applied by pressing means (not shown). The defective vibration piece portion 2120F to which the pressure F is applied is broken by the breakage portion 2010c having the weakest strength, and the defective vibration piece portion 2120F is detached from the second vibration piece wafer 2021 and removed. In the defective product removing step, instead of removing the defective vibrating piece portion 2120F from the second vibrating piece wafer, a mark that can be recognized by the image recognition method is used on the surface of the defective vibrating piece portion 2120F using ink, laser, or the like. You may leave it on.

  As described above, the strong excitation process (S20) including the power application process (S21), the inspection process (S22), and the defective product removal process (S23) is executed, and a plurality of good second vibration piece portions 2120 are formed. The second vibrating reed wafer 2022 is obtained, and the process proceeds to the next singulation step (S30).

(Individualization process)
The singulation step (S30) is pressed from the second vibrating piece wafer 2022 having the non-defective second vibrating piece portion 2120 to the individual second vibrating piece portions 2120 in the same manner as the defective product removing step (S23) described above. In this step, F is added and the folding part 2010c is torn off to take out the individual pieces of the vibrating piece 100. The vibrating piece 100 singulated in the singulation step (S30) is moved to the accommodation step (S40). In the defective product removing step (S23), when the surface of the defective vibration piece 2120F is marked with a recognizable image recognition method using ink or laser, image recognition is performed in the individualizing step. Thus, the defective vibration piece 2120F may not be taken out.

(Containment process)
The housing step (S40) is a step of obtaining the vibrator 1000 (see FIG. 1) by so-called packaging. The housing step (S40) is a step including a mounting step (S41), a frequency adjustment step (S42), and a sealing step (S43). FIG. 5 is a cross-sectional view of a portion corresponding to the AA ′ portion shown in FIG. 1A, showing the manufacturing process of the housing step (S40). The same components as those of the vibrator 1000 shown in FIG. The same reference numerals are given, and description thereof is omitted.

(Mounting process)
In the housing step (S40), first, the mounting step (S41) is performed. In the mounting step (S41), as shown in FIG. 5A, a conductive joining member 500 is disposed on the connection electrode 610 formed on the bottom 200b of the recess space 200a of the package 200. Then, the connection electrodes 21b and 22b formed with the resonator element 100 are placed on the bonding member 500 on the connection electrode 610 so as to face the connection electrode 610, and the resonator element 100 is disposed in the recess space 200a. . Then, the bonding member 500 is cured, the connection electrode 610 and the connection electrodes 21b and 22b of the vibration piece 100 are electrically connected, and the vibration piece 100 is fixed to the package 200, whereby the mounting step (S41) is performed. finish. The joining member 500 is not particularly limited, for example, a conductive adhesive, solder, metal bumps, etc., but a conductive adhesive with high productivity is preferably used.

(Frequency adjustment process)
When the resonator element 100 is mounted in the recessed space 200a of the package 200 by the mounting process (S41), the process proceeds to the frequency adjusting process (S42). In the frequency adjustment step (S42), as shown in FIG. 5B, the laser L is irradiated from a laser irradiation device (not shown) toward the excitation electrode 21a of the first electrode 21 from the opening side of the recessed space 200a of the package 200. Then, a part of the electrode metal of the excitation electrode 21a is evaporated and removed by the laser L until a desired vibration frequency is obtained. In addition to the above method, the frequency adjustment step (S42) may be performed by irradiating the excitation electrode 21a with ions, plasma, or the like, or a member such as Au, Ag, or Al may be deposited on the excitation electrode 21a. You may carry out by adding to the excitation electrode 21a by methods, such as a sputter | spatter.

(Sealing process)
The package 200 on which the resonator element 100 adjusted to a desired frequency in the frequency adjusting step (S42) is mounted is transferred to the sealing step (S43). In the sealing step (S43), as shown in FIG. 5C, first, the sealing member 400 is placed on the upper end surface 200d having a frame-like planar shape on the opening side of the recessed space 200a of the package 200. Further, the lid 300 is placed on the seal member 400. The seal member 400 is preferably made of a material closer to the thermal expansion coefficient of the package 200, for example, Kovar. The lid 300 is also preferably made of, for example, Kovar, which has a thermal expansion coefficient closer to that of the package 200 and the seal member 400. The package 200 may be one in which the seal member 400 is previously placed on the upper end surface 200d.

  Then, in a processing chamber (chamber) (not shown) maintained in a vacuum environment or an inert gas atmosphere environment, the lid 300 and the package 200 are hermetically joined by a joining method such as seam welding, and a sealing process is performed. (S43) is completed, the accommodation step (S40) is completed, and the vibrator 1000 is obtained. And it transfers to an inspection process (S50).

(Inspection process)
In the inspection step (S50), an inspection based on a predetermined specification of the vibrator 1000 as a finished product is performed. In the inspection step (S50), although not shown, predetermined functional quality inspection performed by bringing terminals provided in the inspection apparatus into contact with the external connection electrodes 620a and 620b, visual inspection or visual inspection using a microscope, and the like are performed, and pass / fail determination is performed. .

  Even in conventional vibrators, it has been known that strong excitation, so-called overdrive, is performed for the purpose of improving the adhesion between the excitation electrode and the element piece, but strong excitation is performed after sealing the vibration piece in the package. It was common that However, in this conventional method, the foreign matter adhering to the vibrating piece due to strong excitation is shaken off in the sealed package internal space, and the foreign matter remaining in the package internal space is attached to and detached from the vibrating piece. Has been repeated, causing the vibration characteristics of the vibrator to fluctuate.

  However, in the method for manufacturing the vibrator 1000 according to the first embodiment, when the strong excitation step (S20) is performed in the state of the vibrating piece wafer 2020, at least a part of the foreign matter attached to the vibrating piece 100 is shaken off. This reduces the possibility that foreign matter adhering to the resonator element 100 is brought into the package 200. Accordingly, the vibrator 1000 having stable vibration characteristics can be obtained.

(Second Embodiment)
FIG. 6 shows a schematic configuration of an oscillator obtained by the method for manufacturing an oscillator according to the second embodiment. FIG. 6A is an external plan view in which a lid is omitted, and FIG. 6B is a cross-sectional view taken along a line CC ′ shown in FIG. It is sectional drawing. An oscillator 1100 illustrated in FIG. 6 includes the resonator element 100 included in the resonator 1000 according to the first embodiment, and a semiconductor device including an oscillation circuit of the resonator element 100. The resonator according to the first embodiment. The same reference numerals are given to the same components as 1000 and the manufacturing method thereof, and the description is omitted.

  As shown in FIG. 6B, the oscillator 1100 shown in FIG. 6 includes a resonator element 100 and a semiconductor device 700 (hereinafter referred to as IC 700), a first recessed space 210a that can accommodate the IC 700, and a first A seal member 400 that seals the recess spaces 210a and 210b by joining the package 210 having the second recess space 210b that can accommodate the resonator element 100 connected to the recess space 210a, the lid 300, and the package 210 and the lid 300. And.

  The IC 700 includes an external electrode 700b formed on one surface 700a of the IC 700 and electrically connected to an electronic circuit formed inside the IC 700 (not shown). Then, the external electrode 700b of the IC 700 is disposed opposite to the IC connection electrode 612 formed on the bottom 210d of the first recess space 210a of the package 210, and the IC 700 is bonded to the package 210 by the conductive bonding member 510. It is accommodated in the first recessed space 210a.

  The resonator element 100 is disposed such that the connection electrodes 21b and 22b face the connection electrode 611 formed in the stepped portion 210c that is the bottom of the second recess space 210b of the package 210, and the conductive bonding member 500 has conductivity. It is fixed and arranged by. The connection electrode 611 and the IC connection electrode 612 are electrically connected by a lead wiring (not shown) formed inside the package 210. Further, the IC connection electrode 612 is electrically connected to the external connection electrodes 620 a and 620 b formed on the external bottom surface 210 e of the package 210 by routing wiring (not shown) formed inside the package 210.

  Next, a method for manufacturing the oscillator 1100 will be described. The manufacturing method of the oscillator 1100 according to the present embodiment includes the same steps as the manufacturing method of the vibrator 1000 according to the first embodiment, that is, the flowchart shown in FIG. However, the configuration of the mounting step (S41) included in the accommodation step (S40) shown in FIG. 2C is different, and FIG. 7 shows a flowchart of the steps included in the mounting step (S41). As described above, in the method for manufacturing the oscillator 1100 according to the second embodiment, the description of the same steps as those for the method for manufacturing the vibrator 1000 according to the first embodiment will be omitted.

(From vibrating piece formation process to individualization process)
The oscillator 1100 obtained by the manufacturing method according to the present embodiment includes the resonator element 100 included in the vibrator 1000 obtained by the manufacturing method according to the first embodiment. Accordingly, the steps from the vibrating piece forming step (S10) to the individualizing step (S30) shown in FIG. 2A are the same. Therefore, the description is omitted.

(Containment process)
The housing step (S40) is a step of obtaining the oscillator 1100 (see FIG. 6) by so-called packaging. The housing step (S40) is a step including a mounting step (S41), a frequency adjustment step (S42), and a sealing step (S43). Furthermore, the mounting step (S41) is a step including an IC mounting step (S411) and a vibration piece mounting step (S412). FIG. 8 is a cross-sectional view of a portion corresponding to the CC ′ portion shown in FIG. 6A showing the manufacturing process of the mounting process (S41) included in the housing process (S40), and the oscillator 1100 shown in FIG. The same components are denoted by the same reference numerals, and description thereof is omitted.

(IC mounting process)
In the mounting step (S41), first, an IC mounting step (S411) is performed. In the IC mounting step (S411), as shown in FIG. 8A, a conductive bonding member 510 is disposed on the IC connection electrode 612 formed on the bottom 210d of the first recess space 210a of the package 210. The external electrode 700b of the IC 700 prepared in advance is placed on the bonding member 510 so as to face the IC connection electrode 612. Then, the bonding member 510 is cured, the IC connection electrode 612 and the external electrode 700b of the IC 700 are electrically connected, and the IC 700 is fixed to the package 210, thereby completing the IC mounting step (S411). In the IC mounting step (S411), the bonding member 510 is disposed on the external electrode 700b of the IC 700, and the bonding member 510 and the IC connection electrode 612 are bonded to each other, thereby connecting the IC connection electrode 612 and the external electrode 700b. You may make it connect electrically. In addition to the above method, the IC 700 is arranged so that the surface on which the external electrode 700b is not formed and the bottom 210d of the first recess space 210a of the package 210 face each other, and then the external electrode 700b and the IC connection electrode 612 may be electrically connected with a bonding wire.

(Vibration piece mounting process)
After the IC mounting step (S411), the process proceeds to the resonator element mounting step (S412). In the resonator element mounting step (S412), as shown in FIG. 8B, first, a connection member having conductivity with the connection electrode 611 formed in the step portion 210c which is the bottom of the second recess space 210b of the package 210. 500 is arranged. Next, the connection electrodes 21 b and 22 b included in the vibration piece 100 are opposed to the connection electrode 611 so that the vibration piece 100 is accommodated in the second recess space 210 b, and the connection electrodes 21 b and 22 b come into contact with the bonding member 500. The vibrating piece 100 is placed on the stepped portion 210c. Then, the bonding member 500 is cured, the connection electrode 611 and the connection electrodes 21b and 22b of the vibration piece 100 are electrically connected, and the vibration piece 100 is fixed to the package 210, whereby the vibration piece mounting step (S412). ) Ends.

  A mounting step (S41) including an IC mounting step (S411) and a resonator element mounting step (S412) is performed, and the process proceeds to the next frequency adjustment step (S42).

(Frequency adjustment process and sealing process)
The frequency adjustment step (S42) and the sealing step (S43) are the same manufacturing method as the method for manufacturing the vibrator 1000 according to the first embodiment. In the frequency adjustment step (S42) according to the present embodiment, as shown in FIG. 8B, the excitation electrode 21a of the first electrode 21 of the resonator element 100 accommodated in the package 210 is irradiated with the laser L, and the excitation electrode The desired frequency is adjusted by evaporating and removing a part of 21a.

  After the frequency adjustment step (S42), the process proceeds to the sealing step (S43). In the sealing step (S43), as shown in FIG. 8C, first, the sealing member 400 is mounted on the upper end surface 210f having a planar shape of the frame shape on the opening side of the second recessed space 210b of the package 210. The lid 300 is further placed on the seal member 400. Then, in a processing chamber (chamber) (not shown) maintained in a vacuum environment or an inert gas atmosphere environment, the lid 300 and the package 210 are hermetically joined by a joining method such as seam welding, and a sealing process is performed. (S43) ends and the oscillator 1100 is obtained. And it transfers to an inspection process (S50).

(Inspection process)
After the housing process (S40) including the mounting process (S41), the frequency adjusting process (S42), and the sealing process (S43), the process proceeds to the inspection process (S50). In the inspection step (S50), an inspection based on a predetermined specification of the oscillator 1100 as a finished product is performed. In the inspection step (S50), although not shown, predetermined functional quality inspection performed by bringing terminals provided in the inspection apparatus into contact with the external connection electrodes 620a and 620b, visual inspection or visual inspection using a microscope, and the like are performed, and pass / fail determination is performed. .

  In the method of manufacturing the oscillator 1100 according to the second embodiment described above, the strong excitation step (S20) is performed in the state of the vibrating piece wafer 2020, so that at least a part of the foreign matter attached to the vibrating piece 100 is shaken off. As a result, the possibility that foreign matter adhering to the resonator element 100 is brought into the package 210 is reduced. Therefore, the oscillator 1100 having stable vibration characteristics can be obtained.

  Conventionally, in the case of an oscillator in which strong excitation is performed after sealing a semiconductor device (IC) and a resonator element in a package that has been generally performed, high power of strong excitation flows to the semiconductor device. As a result, the semiconductor device may be damaged. However, in the method for manufacturing the oscillator 1100 according to the present embodiment, since the strong excitation process (S20) is performed at the component stage of the resonator element 100, the oscillator 1100 is mounted in the housing process (S40) after the strong excitation process (S20). Therefore, it is possible to obtain an oscillator 1100 having a stable quality without being affected by strong excitation at all.

  Further, in the method for manufacturing the vibrator 1000 according to the first embodiment and the oscillator 1100 according to the second embodiment, a large power for strong excitation is applied to the first vibrating piece portion 2110 in the form of the vibrating piece wafer 2020. (See FIG. 4). Then, the defective vibration piece portion 2120F generated by the strong excitation can be detected in the component state as illustrated.

  That is, as disclosed in the prior art, in the form in which the resonator element or the resonator element and the IC chip are arranged in the cavity and the resonator element is strongly excited, the resonator element or the IC chip is defective due to the strong excitation. In this case, the defect loss avoids a large loss cost, including not only the vibration piece cost but also the cost of parts other than the vibration piece such as a package or IC and the processing man-hours (processing cost) up to that point. can do.

  Each embodiment mentioned above is an example, is not limited to these, A various deformation | transformation is possible. For example, in each of the above-described embodiments, quartz is used as a material having piezoelectricity as an example of the substrate. However, the present invention is not limited to this, and a silicon semiconductor substrate may be used. When a silicon semiconductor substrate is used as the substrate, electrostatic driving by Coulomb force may be used as the excitation means.

  DESCRIPTION OF SYMBOLS 10 ... Piezoelectric element (crystal element) 21,22 ... Electrode, 100 ... Vibrating piece, 200 ... Package, 300 ... Lid, 400 ... Seal member, 500 ... Joining member, 1000 ... Vibrator

Claims (5)

A vibrating piece forming step of forming a first vibrating piece having an excitation electrode on a substrate;
A strong excitation step of applying a power greater than a predetermined operating power to the first vibrating piece to obtain a second vibrating piece by strong excitation;
Containing the second vibrating piece in a container,
A method of manufacturing a vibrator characterized by the above.   The method for manufacturing a vibrator according to claim 1, wherein the strong excitation step includes an inspection step of inspecting the second vibration piece.   The method for manufacturing a vibrator according to claim 1, wherein a plurality of the first vibrating bars are formed on the substrate. A vibrating piece forming step of forming a first vibrating piece having an excitation electrode on a substrate;
A strong excitation step of applying a power greater than a predetermined operating power to the first vibrating piece to obtain a second vibrating piece by strong excitation;
A housing step of housing the second vibrating piece and the semiconductor device in a container;
An oscillator manufacturing method characterized by the above.   The method of manufacturing an oscillator according to claim 4, wherein the strong excitation step includes an inspection step of inspecting the second vibration piece.

Images