JP2016167513A - Operation method of processing system and processing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a an operation method of a processing system and the processing system capable of operating an exhaust unit even when a by-product containing silicon is deposited in the exhaust unit.SOLUTION: The operation method of the processing system includes the steps of: stopping a first exhaust unit from operating, which is connected to a processing unit; heating the stopped first exhaust unit; and resuming the operation of the heated first exhaust unit. The processing unit forms a film which contains silicon using a chlorine-containing gas on a substrate or removes the film containing silicon from the substrate.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a processing system operating method and a processing system.

In the manufacturing process of a semiconductor device, for example, the formation of a silicon film on a substrate or the removal of at least a part of the silicon film formed on the substrate may be performed in a reduced pressure atmosphere. At this time, a by-product containing silicon may be deposited inside the exhaust unit connected to the processing apparatus in which the processing is performed. If by-products accumulate, the operation of the exhaust section may be hindered.
For this reason, even when a by-product containing silicon is deposited in the exhaust part, there is a demand for a technique that can operate the exhaust part.

JP-A-10-73088

  The problem to be solved by the present invention is to provide an operation method and a processing system for a processing system that can operate the exhaust unit even when a by-product containing silicon is deposited on the exhaust unit. .

  The operating method of the processing system according to the embodiment includes a step of stopping the operation of the first exhaust unit connected to the processing apparatus, a step of heating the stopped first exhaust unit, and the heating of the heated first exhaust unit. And a step of starting operation. In the processing apparatus, a silicon-containing film is formed on a substrate or a silicon-containing film on the substrate is removed using a chlorine-containing gas.

It is a figure showing the schematic structure of the processing system which concerns on embodiment. It is sectional drawing of a processing apparatus. It is sectional drawing of a 1st exhaust part. It is sectional drawing of a 2nd exhaust part. It is AA 'sectional drawing of FIG. It is an example of the operating method of the processing system which concerns on embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
In the present specification and each drawing, the same elements as those already described are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

FIG. 1 is a diagram illustrating a schematic configuration of a processing system 1 according to the embodiment.
The processing system 1 includes a gas supply system 10, a processing apparatus 20, an exhaust system 30, and a control unit 40.

  The gas supply system 10 includes, for example, a first gas supply source 101, a second gas supply source 103, a third gas supply source 105, a first valve 111, a second valve 113, a third valve 115, Have The first valve 111 is connected to the first gas supply source 101. The second valve 113 is connected to the second gas supply source 103. The third valve 115 is connected to the third gas supply source 105.

The first gas supply source 101 stores a silicon-containing gas such as dichlorosilane (SiH ₂ Cl ₂ ) or trichlorosilane (HSiCl ₃ ). The second gas supply source 103 stores a chlorine-containing gas such as hydrogen chloride (HCl), for example. The third gas supply source 105 stores an inert gas such as argon or nitrogen. The gas supply system 10 may further include another gas supply source.

  The piping connected to each valve is connected to the supply port 201 of the processing apparatus 20. A mass flow controller (not shown) or the like may be provided between each valve and the supply port 201. Further, a pipe connected to the exhaust system 30 may be provided.

  The processing apparatus 20 is, for example, a CVD (Chemical Vapor Deposition) apparatus that forms a film on a substrate in a reduced-pressure atmosphere. The processing apparatus 20 may be an etching apparatus using a reactive gas such as RIE and CDE that removes at least a part of the film formed on the substrate in a reduced-pressure atmosphere.

  The exhaust system 30 is connected to the exhaust port 202 of the processing apparatus 20. The exhaust system 30 includes, for example, a pressure adjusting unit 31, a valve 32, a first exhaust unit 33, a second exhaust unit 35, a valve 38, and an abatement device 39. The exhaust system 30 may further include another exhaust unit or a gas trap device.

  The pipe connected to the exhaust port 202 is connected to, for example, the pressure adjustment unit 31. The pressure adjustment unit 31 may have a function of adjusting the pressure in the processing apparatus 20. The pressure adjustment unit 31 includes, for example, a butterfly valve.

  A first exhaust unit 33 is connected to the exhaust side of the pressure adjustment unit 31 via a valve 32. The 1st exhaust part 33 is a pump suitable for a high vacuum area | region, for example. A second exhaust unit 35 is connected to the exhaust side of the first exhaust unit 33. The 2nd exhaust part 35 is a pump suitable for a low vacuum area | region rather than the 1st exhaust part 33, for example.

  A detoxifying device 39 is connected to the exhaust side of the second exhaust part 35. Inside the abatement apparatus 39, a chemical that adsorbs or decomposes toxic components of gas is provided. The gas exhausted from the first exhaust unit 33 and the second exhaust unit 35 is processed by the detoxifying device 39 and then exhausted to the external space. A valve 38 is provided between the second exhaust part 35 and the abatement apparatus 39.

  The control unit 40 is a computer, for example, and can control operations in various elements included in the processing system 1. For example, the control unit 40 is configured to be able to transmit control signals to the respective valves included in the gas supply system 10, the processing device 20, and the respective elements included in the exhaust system 30.

Next, an example of a detailed structure of the processing apparatus 20 when the processing apparatus 20 is a CVD apparatus will be described with reference to FIG.
FIG. 2 is a cross-sectional view of the processing apparatus 20.

  As illustrated in FIG. 2, the processing apparatus 20 includes a processing container 203. Inside the processing container 203, for example, a processing container 203, a substrate holder 204, a gas supply head 205, a view port 206, and a slit valve 207 are provided.

  The processing apparatus 20 may be an apparatus that forms a film using plasma. In this case, the processing device 20 may further include a power supply antenna and a matching box connected to the antenna. Further, the processing apparatus 20 may further include a shield (not shown).

  As an example, a supply port 201 is provided in the upper part of the processing container 203, and an exhaust port 202 is provided in the lower part of the processing container 203. The processing container supply port 201 communicates with, for example, a gas supply head 205. The gas supply head 205 is provided at a position facing the substrate holder 204. For example, a large number of holes are provided on the substrate holder 204 side of the gas supply head 205.

  The substrate holder 204 may be configured to be rotatable in order to suppress variations in the film formation rate in the substrate surface when the film is formed on the substrate W. The substrate holder 204 may be further configured to change the distance between the substrate holder 204 and the gas supply head 205.

  The substrate holder 204 includes, for example, a substrate support portion 2041, a support column 2042, a support plate 2043, a reflection plate 2044, a heater 2045, a first cylindrical portion 2046, and a second cylindrical portion 2047.

  The substrate support unit 2041 is an annular member, and the substrate W is supported at the center of the substrate support unit 2041. The substrate support part 2041 is fixed to the first cylindrical part 2046. The first cylindrical portion 2046 is supported by the second cylindrical portion 2047. The diameter of the second cylindrical portion 2047 is smaller than the diameter of the first cylindrical portion 2046. For example, a part of the second cylindrical part 2047 is provided inside the processing container 203 and the other part of the second cylindrical part 2047 is provided outside the processing container 203.

  The heater 2045 can be used to heat the substrate W. For example, the heater 2045 heats the substrate W by radiant heat. The heater 2045 can be connected to a power source by a wiring (not shown) passing through the inside of the column 2042. The temperature of the substrate W heated by the heater 2045 is measured by, for example, a radiation thermometer through the view port 206.

  The heater 2045 is supported by the reflection plate 2044. The heater 2045 may be supported by the support plate 2043. The reflection plate 2044 is provided, for example, to reflect light emitted from the heater 2045 toward the substrate W side. The reflection plate 2044 is supported by the support plate 2043.

  The support plate 2043 is supported by, for example, a support column 2042. For example, a magnetic fluid (not shown) is provided between the second cylindrical portion 2047 and the processing vessel 203, and the second cylindrical portion 2046 is provided to be rotatable with respect to the processing vessel 203 and the support column 2042. As the second cylindrical portion 2047 rotates, the first cylindrical portion 2046 and the substrate support portion 2041 fixed to the second cylindrical portion 2047 and the substrate W held by the substrate support portion 2041 rotate. The second cylindrical portion 2047 may be configured to be driven up and down.

  The slit valve 207 is provided on the side of the substrate holder 204, for example. The substrate W is carried into and out of the processing container 203 through the slit valve 207.

Next, the detailed structure of the 1st exhaust part 33 is demonstrated. The first exhaust part 33 is, for example, a mechanical pump. Specifically, the first exhaust part 33 may be a turbo molecular pump or a mechanical booster pump. An example where the first exhaust part 33 is a turbo molecular pump will be described with reference to FIG.
FIG. 3 is a cross-sectional view of the first exhaust part 33.

  As shown in FIG. 3, the first exhaust part 33 includes an outer casing 331, an inner casing 332, a rotating member 333, a fixing member 334, a connector 335, an intake port 336, an exhaust port 337, a heater. 338, a motor 339, and a temperature detector 340.

  The gas flows into the first exhaust part 33 through the intake port 336, and the gas is discharged from the first exhaust part 33 through the exhaust port 337.

  The outer casing 331 is a cylindrical member. An inner casing 332 is provided inside the outer casing 331. The inner casing 332 is a cylindrical member similar to the outer casing 331 and has a plurality of stationary blades 3321 inside. The plurality of stationary blades 3321 are arranged along the rotation axis of the rotating member 333. The outer casing 331 and the inner casing 332 may be configured by combining a plurality of members.

  A rotating member 333 is provided inside the inner casing 332. The rotating member 333 includes a main shaft 3331 and a rotor 3332. The rotor 3332 has a plurality of moving blades 3333. The plurality of moving blades 3333 are arranged along the rotation axis of the rotating member 333. The stationary blades 3321 and the moving blades 3333 are alternately provided along the rotation axis of the rotating member 333.

  The thickness of the stationary blade 3321 in the rotation axis direction of the main shaft 3331 decreases from the intake port 336 side to the exhaust port 337 side. Similarly, the thickness of the rotor blade 3333 in the rotation axis direction is also reduced from the intake port 336 side toward the exhaust port 337 side.

  When the main shaft 3331 is rotated by the motor 339, the rotor 3332 rotates, and the moving blade 3333 rotates between the respective stationary blades 3321. By this operation, gas is pushed out from the intake port 336 to the exhaust port 337, and the inside of the processing container 203 is exhausted.

  The fixing member 334 includes, for example, a lower radial magnetic bearing 3341, an upper radial magnetic bearing 3342, and a fixing portion 3343. The fixed portion 3343 is a cylindrical member and is provided so as to surround a part of the main shaft 3331. Each radial magnetic bearing is fixed to a fixed portion 3343. The main shaft 3331 is rotatably held with respect to the fixed member 334 by the lower radial magnetic bearing 3341 and the upper radial magnetic bearing 3342.

  The connector 335 is connected to a power source (not shown). The connector 335 supplies power to the fixing member 334, the heater 338, the motor 339, and the like.

  For example, the heater 338 is provided around the outer casing 331 so as to surround at least a part of the rotor 3332. More specifically, the heater 338 surrounds at least a part of the plurality of stationary blades 3321 and at least a part of the plurality of moving blades 3333 along a plane orthogonal to the rotation axis of the main shaft 3331. A plurality of heaters 338 may be provided in an annular shape around the outer casing 331.

  Alternatively, the heater 338 may be provided between the outer casing 331 and the inner casing 332. In this case, the heater 338 is provided in an annular shape around the inner casing 332, for example.

  The temperature detection unit 340 is provided so as to be able to detect the temperature of the first exhaust unit 33 heated by the heater 338. The temperature detection unit 340 is configured to be able to feed back the detected temperature to the control unit 40. The control unit 40 can control the operation of the heater 338 based on the information sent from the temperature detection unit 340.

  The heater 338 performs heating using, for example, a heating wire. Alternatively, the heater 338 may perform heating using radiation. Various other structures can be applied to the heater 338.

Next, the detailed structure of the second exhaust part 35 will be described. The second exhaust part 35 is, for example, a mechanical pump. Specifically, the second exhaust part 35 can be a dry pump. An example where the second exhaust part 35 is a multistage dry pump will be described with reference to FIGS. 4 and 5.
FIG. 4 is a cross-sectional view of the second exhaust part 35.
FIG. 5 is a cross-sectional view taken along the line AA ′ of FIG.

  As shown in FIG. 4, the second exhaust part 35 includes an intake port 351, an exhaust port 352, a main shaft 353, rotors 355 to 359, pump chambers 360 to 364, gas transport paths 360 a to 363 a, a motor. 371, casing 372, free-side bearing 373, fixed-side bearing 374, lubricating oil 375, timing gear 376, heater 377, and temperature detector 378.

  The gas that has entered the second exhaust part 35 from the intake port 351 flows through the pump chambers 360 to 364 in order while passing through the gas transport paths 360 a to 363 a in the casing 372, and is exhausted from the intake port 351. Each pump chamber is provided with each of rotors 355-359.

  The main shaft 353 is rotated by a motor 371. Each rotor is connected to a main shaft 353, and the main shaft 353 rotates, so that each rotor rotates in each pump chamber. The thickness of the main shaft 353 of each rotor in the rotation axis direction decreases from the intake port 351 toward the exhaust port 352.

  Each pump chamber is provided with two rotors, and each rotor is connected to each main shaft. For example, as shown in FIG. 5, rotors 355 a and 355 b are provided in the pump chamber 360. The rotor 355a is connected to the main shaft 353a, and the rotor 355b is connected to the main shaft 353b. As the rotors 355a and 355b rotate in directions opposite to each other, the gas is discharged to the gas transport path 360a side.

  The two main shafts 353a and 353b are configured to rotate in opposite directions at the same rotational speed by a timing gear 376. The main shaft 353 is configured to be rotatable with respect to the casing 372 by a fixed side bearing 374 and a free side bearing 373. For example, lubricating oil 375 is provided on the free bearing 373 side.

  The heater 377 is provided so as to heat the rotors 355 to 359. For example, the heater 377 surrounds at least a part of the casing 372 along a plane orthogonal to the rotation axis of the main shaft 353. More specifically, the heater 377 is provided so as to surround at least one of the rotors 355 to 359.

  The temperature detector 378 is provided so as to be able to detect the temperature of the second exhaust part 35 heated by the heater 377. The temperature detection unit 378 is configured to be able to feed back the detected temperature to the control unit 40. The control unit 40 can control the operation of the heater 377 based on the information sent from the temperature detection unit 378.

  The heater 377 is for heating using, for example, a heating wire. Alternatively, the heater 377 may be one that performs heating using radiation. Various other structures can be applied to the heater 377. The casing 372 may further be provided with a flow path for circulating a refrigerant (not shown).

In the processing system 1 described above, a process for performing maintenance of the processing apparatus 20 and the abatement apparatus 39 and a process for processing the substrate W after the maintenance is performed will be described with reference to FIG. To do.
FIG. 6 is an example of an operation method of the processing system 1 according to the embodiment.

  First, the valve 32 and the valve 38 are closed (step S601). However, when only the maintenance of the abatement apparatus 39 is performed, only the valve 38 may be closed. By closing the valve 32 and the valve 38, the processing apparatus 20 and the detoxifying apparatus 39 can be maintained without exposing the first exhaust part 33 and the second exhaust part 35 to the atmosphere. Subsequently, the operation of the first exhaust unit 33 and the second exhaust unit 35 is stopped (step S602).

  Thereafter, maintenance of the processing device 20 and the abatement device 39 is performed. When the maintenance of these apparatuses is completed and the operation of the processing system 1 is resumed, first, the heater 338 of the first exhaust unit 33 and the heater 377 of the second exhaust unit 35 are operated (step S603). At this time, the stationary blade 3321 and the moving blade 3333 are heated by the heater 338, and the rotors 355 to 359 are heated by the heater 377.

  Specifically, in step S603, the temperatures of the first exhaust unit 33 and the second exhaust unit 35 are detected by the temperature detection units 340 and 378, and the exhaust units are set to a predetermined temperature (first temperature). Heat with each heater until it reaches.

  After the temperature of each exhaust part reaches a predetermined temperature by each heater, the operation of the first exhaust part 33 and the second exhaust part 35 is started (step S604). When the load on the rotating member 333 or the main shaft 353 is still large due to the by-product, the operation of the exhaust unit is stopped and the heating of each exhaust unit by the heater is continued. At this time, the heater is operated so that the temperature of the exhaust section becomes a second temperature higher than the first temperature. Alternatively, the operation of the exhaust unit may be started after the exhaust unit is stopped for a predetermined time. While the operation of the exhaust unit is stopped, the exhaust unit is continuously heated by the heater, so the temperature of the exhaust unit becomes higher than the first temperature.

  The heaters 338 and 377 may be operated after the maintenance of the processing apparatus 20 and the abatement apparatus 39 is completed, or may be operated before the maintenance is completed. That is, when the operation of each exhaust unit is started after the maintenance is completed, if the respective exhaust unit is heated by each heater, the timing of operating the heater is arbitrary.

  After starting the operation of the first exhaust part 33 and the second exhaust part 35, the heaters 338 and 377 are stopped (step S605). However, the heaters 338 and 377 may be stopped after step S603 and before step S604.

  If the heater operation is stopped between steps S603 and S604, and if the exhaust unit cannot be operated due to the by-product in step S604, each heater is operated again. That is, step S603 is repeatedly performed until each exhaust part becomes operable.

  If the exhaust part is heated excessively, contact between the stationary blade 3321 and the moving blade 3333 or contact between the rotors 355 to 359 and the inner wall of each pump chamber may occur due to thermal expansion. For this reason, it is desirable to register the upper limit value of the temperature of each exhaust unit in the control unit 40 and to operate each heater so that the upper limit value is not exceeded in the control unit 40. Alternatively, the program of the control unit 40 may be configured so that the control unit 40 issues a warning when the upper limit value is reached.

  After the influence of by-products is reduced and the operation of the first exhaust part 33 and the second exhaust part 35 is started, the valve 32 and the valve 38 are opened (step S606). At this time, when the pressure adjusting unit 31 is closed, the pressure adjusting unit 31 is opened. By opening the pressure adjustment unit 31, the valve 32, and the valve 38, the exhaust in the processing container 203 is resumed.

  After the processing container 203 is evacuated and the processing container 203 reaches a predetermined pressure, the substrate is carried into the processing container 203 (step S607). When maintenance of the processing apparatus 20 is performed between step S602 and step S603, a cleaning process, a conditioning process, and the like inside the processing container 203 may be performed before the substrate is loaded into the processing container 203.

  Next, a silicon-containing gas is introduced from the first gas supply source 101 and a chlorine-containing gas is introduced from the second gas supply source 103 into the processing vessel 203, and the substrate W is processed. At this time, for example, a film containing silicon is formed on the substrate W (step S608). More specifically, for example, a silicon film is epitaxially grown on the substrate W. When a film containing silicon is formed on the substrate W, for example, the substrate W may be heated by the heater 2045.

  Next, the substrate W is unloaded from the processing container 203 (step S609).

  The above steps S606 to S609 are repeated, and when maintenance of the processing apparatus 20 or the abatement apparatus 39 becomes necessary, steps S601 to S605 are performed again.

  Steps S601 to S609 described above may be automatically performed by the control unit 40, or may be performed by a person operating a terminal connected to each element.

Here, the operation and effect of the operation method of the processing system according to the present embodiment will be described.
When the substrate W is processed using a silicon-containing gas and a chlorine-containing gas, a viscous liquid by-product may be deposited inside each element of the exhaust system 30. The viscosity of this liquid by-product decreases with increasing temperature.

  Therefore, when this by-product accumulates inside the first exhaust part 33, the viscosity of the by-product decreases due to the heat generated by the operation of the rotating member 333 while the first exhaust part 33 is operating. To do. Similarly, when the by-product accumulates inside the second exhaust part 35, while the second exhaust part 35 is in operation, the by-product is generated by the heat generated by the operation of the main shaft 353 and the rotors 355 to 359. Viscosity decreases.

  However, when the operation of each exhaust section is stopped, the temperature of each exhaust section decreases and the viscosity of the by-product increases. As a result, when operating each exhaust part again, the case where the exhaust part cannot be moved by a by-product may occur.

  Specifically, in the first exhaust part 33, the moving blade 3333 cannot be rotated with respect to the stationary blade 3321 due to the by-products attached to the stationary blade 3321 and the moving blade 3333. Inside the second exhaust part 35, the rotor cannot be rotated in the pump chamber by a by-product adhering to the rotor and the pump chamber provided with the rotor.

  On the other hand, in the operation method according to the present embodiment, the heater provided in each exhaust unit is operated before starting the operation of each exhaust unit. When the inside of each exhaust part is heated by the heater, the viscosity of the by-product deposited inside each exhaust part decreases. For this reason, even when the operation of the exhaust unit is stopped, the exhaust unit can be operated again.

  The problem due to such a by-product becomes remarkable when the silicon-containing gas is dichlorosilane or trichlorosilane. This is because when these silicon-containing gas and chlorine-containing gas are used, liquid by-products are more easily formed.

  When a liquid by-product is formed, the low molecule contained in the by-product may evaporate and increase the viscosity by heating with a heater. For this reason, it is desirable that the heating time of the exhaust part by the heater is short. Therefore, it is desirable that the heaters 338 and 377 start operating after maintenance and stop operating before step S606.

  Moreover, the problem by such a by-product can become remarkable when an exhaust part is a mechanical pump. This is because the operation of machine parts is hindered by the by-products.

  Further, when the silicon film is formed on the substrate W, the amounts of the silicon-containing gas and the chlorine-containing gas flowing through the respective exhaust portions are larger than when the silicon film formed on the substrate W is etched. . For this reason, the quantity of the by-product formed in each exhaust part increases.

  Therefore, the operation method according to the present embodiment is more effective for a processing system having the processing apparatus 20 that performs film formation.

  In the present embodiment, the processing system 1 having two exhaust parts, the first exhaust part 33 and the second exhaust part 35, has been described. However, the processing system 1 may have only one exhaust part. In this case, the processing system 1 may include only the second exhaust unit 35 suitable for the low vacuum region, for example. Alternatively, the processing system 1 may have more exhaust parts.

  As mentioned above, although several embodiment of this invention was illustrated, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, changes, and the like can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and equivalents thereof. Further, the above-described embodiments can be implemented in combination with each other.

DESCRIPTION OF SYMBOLS 1 ... Processing system 10 ... Gas supply system 20 ... Processing apparatus 30 ... Exhaust system 31 ... Pressure adjustment part 33 ... 1st exhaust part 35 ... 2nd exhaust part 38 ... Valve 39 ... Detoxifying device 40 ... Control part 203 ... Processing container 204 ... Substrate holder 207 ... Slit valve 333 ... Rotating member 334 ... Fixed member 336 ... Intake port 337 ... Exhaust port 338 ... Heater 351 ... Intake port 352 ... Exhaust port 355-359 ... Rotor 360-364 ... Pump chamber 377 ... Heater

Claims (8)

Using the chlorine-containing gas to stop the operation of the first exhaust unit connected to the processing apparatus for forming the silicon-containing film on the substrate or removing the silicon-containing film on the substrate;
Heating the stopped first exhaust part;
Starting the operation of the heated first exhaust part;
Of operating a processing system comprising:   The operation method of the processing system according to claim 1, wherein in the step of stopping the operation of the first exhaust part, the operation of the second exhaust part connected to the exhaust side of the first exhaust part is further stopped.   The operating method of the processing system according to claim 1, wherein the first exhaust unit is a mechanical pump.   The maintenance of the abatement apparatus connected to the exhaust side of the first exhaust part is performed after the operation of the first exhaust part is stopped and before the first exhaust part is heated. The operating method of the processing system as described in any one of these. The processing apparatus is for forming a silicon-containing film on the substrate,
Carrying the substrate into the processing apparatus;
Forming the silicon-containing film on the substrate using the silicon-containing gas and the chlorine-containing gas inside the processing apparatus;
Unloading the substrate on which the silicon-containing film has been formed from the processing apparatus;
The operation method of the processing system according to any one of claims 1 to 4, further comprising:   6. The processing system operating method according to claim 5, wherein the silicon-containing gas is dichlorosilane or trichlorosilane. A processing device;
A first gas supply source connected to the processing apparatus and having a silicon-containing gas;
A second gas supply source connected to the processing apparatus and having a chlorine-containing gas;
A first exhaust unit connected to the processing apparatus and provided with a heater;
With processing system.   The processing system according to claim 7, wherein the silicon-containing gas is dichlorosilane or trichlorosilane.

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