JP2016162782A - Imaging element, imaging device, and method of manufacturing imaging element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imaging element, an imaging device, and a method of manufacturing an imaging element capable of securing a large principal ray incident angle while suppressing increase in the degree of manufacturing difficulty.SOLUTION: An imaging element 12 comprises: a first layer 18 in which a plurality of pixels are arranged at least in a first direction, and that has an imaging function; and a second layer 19 bonded with the first layer 18. The second layer 19 has a support sub layer 26 on which a main material region and a sub-material region are alternately arranged in the first direction. At least one of at least a part of a first principal surface at an opposite side to the second layer 19, of the first layer 18, and at least a part of a second principal surface at an opposite side to the first layer 18, of the second layer 19 is concave or convex.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an image pickup device that outputs an image signal, an image pickup apparatus, and a method for manufacturing the image pickup device.

  2. Description of the Related Art Conventionally, an imaging device including an imaging device such as a CCD imaging device or a CMOS imaging device and an imaging optical system is known. For example, Patent Document 1 discloses a configuration in which a joint portion of a microlens provided on an opening of each pixel of an image sensor is formed in a Fresnel shape in order to increase the chief ray incident angle.

JP 2009-004814 A

  However, the Fresnel shape accurately corresponding to each pixel of the image sensor is very complicated, and the manufacturing difficulty of the image pickup apparatus is high. For this reason, there has been room for improvement in terms of, for example, reducing the manufacturing cost of the imaging device and improving the yield.

  An object of the present invention made in view of such circumstances is to provide an image pickup device, an image pickup apparatus, and a method for manufacturing an image pickup device capable of increasing a chief ray incident angle while suppressing an increase in manufacturing difficulty.

In order to solve the above-described problems, an image sensor according to the present invention includes:
A first layer having an imaging function, in which a plurality of pixels are arranged in at least a first direction;
A second layer bonded to the first layer,
The second layer has a support sublayer in which main material regions and submaterial regions are alternately arranged along the first direction;
At least a part of the first main surface of the first layer opposite to the second layer, and at least one of the second main surface of the second layer opposite to the first layer. At least one of the parts is a concave shape or a convex shape.

In addition, an imaging apparatus according to the present invention includes:
An imaging apparatus comprising an imaging element and an imaging optical system,
The image sensor is
A first layer having an imaging function in which a plurality of pixels are arranged in at least a first direction; and a second layer bonded to the first layer;
The second layer has a support sublayer in which main material regions and submaterial regions are alternately arranged along the first direction;
At least a part of the first main surface of the first layer opposite to the second layer, and at least one of the second main surface of the second layer opposite to the first layer. At least one of the parts is concave or convex,
The imaging optical system is
A subject image is formed on the light receiving surface of the first layer.

In addition, the manufacturing method of the image sensor according to the present invention is as follows.
Forming a photodiode on one main surface of the first substrate;
Forming an adhesion sub-layer on one main surface side of the first substrate;
Depositing a sub-material different from the main material of the second substrate in a groove formed in a predetermined pattern on one main surface of the second substrate;
Forming an adhesion sub-layer on one main surface side of the second substrate;
Bonding the adhesion sublayer of the first substrate and the adhesion sublayer of the second substrate;
Polishing the other main surface with respect to one main surface of the first substrate to form a photoelectric conversion sublayer;
Polishing the other main surface of the second substrate with respect to one main surface to form a support sub-layer,
At least one of the other main surface of the first substrate and at least a portion of the other main surface of the second substrate is concave or convex. To do.

  According to the imaging device, the imaging apparatus, and the manufacturing method of the imaging device according to the present invention, the chief ray incident angle can be increased while suppressing an increase in manufacturing difficulty.

1 is a block diagram illustrating a schematic configuration of an imaging apparatus according to a first embodiment of the present invention. It is a figure which shows the positional relationship of the image pick-up element of FIG. 1, and an imaging optical system. It is principal part sectional drawing of the image pick-up element of FIG. It is a bottom view of the image sensor of FIG. It is principal part sectional drawing of the board | substrate for demonstrating the manufacturing method of the image pick-up element of FIG. It is principal part sectional drawing of the board | substrate for demonstrating the manufacturing method of the image pick-up element of FIG. It is principal part sectional drawing of the board | substrate for demonstrating the manufacturing method of the image pick-up element of FIG. It is a flowchart explaining the pre-process in the manufacturing method of the image pick-up element of FIG. It is a flowchart explaining the post process in the manufacturing method of the image pick-up element of FIG. It is a figure which shows the cross-sectional shape of the image pick-up element which concerns on the 2nd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the imaging apparatus according to the first embodiment of the present invention will be described. As illustrated in FIG. 1, the imaging apparatus 10 includes an imaging optical system 11, an imaging element 12, an image processing unit 13, and a control unit 14.

  The imaging optical system 11 includes a diaphragm and a plurality of lenses, and forms a subject image. In the present embodiment, the imaging optical system 11 has a wide angle of view, and can collect chief rays having a chief ray incident angle of 90 degrees or more, for example.

  The image pickup device 12 is, for example, a CMOS image pickup device, and picks up a subject image formed by the image pickup optical system 11. The image sensor 12 outputs the captured image generated by the imaging to the image processing unit 13 as an analog image signal. In the present embodiment, the image pickup device 12 is described as being a backside illumination type, but is not limited thereto.

  The image processing unit 13 includes a processor dedicated to image processing such as AFE and DSP, for example, and performs pre-stage images such as CDS, gain adjustment (AGC), and AD conversion (ADC) on the image signal acquired from the image sensor 12. Apply processing. The image processing unit 13 performs predetermined subsequent image processing such as automatic exposure (AE), automatic white balance (AWB), color interpolation, brightness correction, color correction, and gamma correction on the captured image.

  The control unit 14 is, for example, a dedicated microprocessor or a general-purpose CPU that executes specific processing by reading a specific program. The control unit 14 controls the entire operation of the imaging device 10.

  Next, the positional relationship between the imaging optical system 11 and the imaging element 12 will be described. As shown in FIG. 2, the image sensor 12 bonded to the package substrate 15 has the light 17 having the center position of the image sensor 12 positioned on the optical axis 16 of the image pickup optical system 11 and having passed through the image pickup optical system 11. That is, it is arranged in the housing of the imaging device 10 so that the subject image is formed on the light receiving surface of the imaging device 12. As will be described later, when the secondary material included in the second layer included in the image sensor 12 contracts or expands, or when tensile stress or compressive stress is generated, the image sensor 12 is deformed and has a curved shape. Become. For this reason, at least a part of the light receiving surface of the image sensor 12 has a concave shape or a convex shape. FIG. 2 illustrates an example in which the entire image sensor 12 (and the light receiving surface) has a convex shape. Hereinafter, the light receiving surface side (upper side in FIG. 2) of the image sensor 12 is referred to as a front side, and the bonding surface side (lower side in FIG. 2) with the package substrate 15 is referred to as a back side.

  Next, the configuration of the image sensor 12 will be specifically described. As shown in FIG. 3, the image sensor 12 includes a first layer 18 and a second layer 19. In FIG. 3, for the sake of explanation, the image sensor 12 is illustrated without being curved, and the components of the image sensor 12 are illustrated with different scales. FIG. 3 is a cross-sectional view of the image sensor 12 along at least one direction (first direction) in which a plurality of pixels of the image sensor 12 are arranged.

  The first layer 18 is a layer having an imaging function for outputting a captured image signal from a pixel, and has a thickness of about 3 to 4 μm, for example. The first layer 18 includes a photoelectric conversion sub layer 20, a wiring sub layer 21, an adhesion sub layer 22, a color filter 23, and a microlens 24.

  The photoelectric conversion sublayer 20 includes a semiconductor material such as silicon as a main material. In a partial region of the photoelectric conversion sublayer 20, a photodiode 25 and a MOS transistor constituting a pixel are formed. The main surface on the front side of the photoelectric conversion sublayer 20 is defined as the light receiving surface of the image sensor 12.

  The wiring sublayer 21 includes an insulating material such as silicon oxide as a main material. A circuit that reads a captured image signal from a pixel is formed in a partial region of the wiring sublayer 21. The circuit is configured by laminating wirings using, for example, copper and aluminum. The wiring sublayer 21 is provided on the back side adjacent to the photoelectric conversion sublayer 20.

  The adhesion sublayer 22 is made of a material having high adhesion such as silicon nitride. The adhesion sub-layer 22 is provided on the back side adjacent to the wiring sub-layer 21 and is used for closely bonding the first layer 18 and the second layer 19 together.

  The color filter 23 corresponds to each color of RGB, for example, and is a filter that allows light in a specific wavelength band to pass therethrough. The color filter 23 is provided corresponding to each pixel. The color filter 23 is provided on the front side of the photoelectric conversion sublayer 20 in the region where the photodiode 25 is formed, adjacent to the photoelectric conversion sublayer 20.

  The microlens 24 is a lens provided corresponding to each pixel. The micro lens 24 condenses the light irradiated through the imaging optical system 11 on the light receiving surface of the imaging device 12 through the color filter 23.

  The second layer 19 is a layer that supports the first layer 18 and has a thickness of, for example, about 170 μm. The second layer 19 includes a support sublayer 26 and an adhesion sublayer 27.

  The support sublayer 26 includes, for example, silicon or glass as a main material. In the support sublayer 26, the main material and the submaterial are alternately arranged in the first direction. The material of each material and the distribution in the width direction of the sub-material, that is, the distribution in the first direction, are arbitrarily determined according to the desired shape of the light receiving surface of the image sensor 12. In the present embodiment, a main material region made of a main material (for example, silicon) and a sub material region made of at least one sub material of the first material 28 and the second material 29 are alternately arranged. . The auxiliary material is a material having a coefficient of thermal expansion different from that of the main material, for example. The first material 28 is, for example, a shrink film or a tensile stress film. The second material 29 is, for example, an expansion film or a compressive stress film. The contraction film and the expansion film contract or expand, respectively, due to heat generated during heat treatment or semiconductor process, for example. When the second layer 19 is viewed from the back side, for example, as shown in FIG. 4, the main material of the support sub-layer 26, the first material 28, and the second material 29 are substantially concentric with different diameters. Are alternately arranged.

  The adhesion sublayer 27 is made of a material having high adhesion such as silicon nitride. The adhesion sub-layer 27 is provided on the front side adjacent to the support sub-layer 26 and is used for closely bonding the first layer 18 and the second layer 19 together.

  Next, a process of forming the first layer 18 and the second layer 19 will be described with reference to FIGS. This process is a process performed using two substrates (hereinafter referred to as a first substrate and a second substrate). Hereinafter, specific examples of the process will be described by dividing into a processing process for the first substrate, a processing process for the second substrate, and a process performed by bonding the first substrate and the second substrate. The step of forming the first layer 18 and the second layer 19 is incorporated into a pre-process of a semiconductor process, for example. The first substrate and the second substrate will be described as being typical silicon semiconductor substrates, for example.

(Processing process for the first substrate)
First, a processing process for the first substrate will be described. First, as shown in FIG. 5A, the photodiode 25 and the MOS transistor are formed on one planarized main surface of the first substrate 30. Subsequently, as illustrated in FIG. 5B, the wiring sublayer 21 is formed on the main surface of the first substrate 30, and, for example, a silicon nitride film is stacked to further form the adhesion sublayer 22.

(Processing process for the second substrate)
Next, a processing process for the second substrate will be described. First, as shown in FIG. 6A, a silicon oxide film 32 and a silicon nitride film 33 are formed on one planarized main surface of the second substrate 31, and a photoresist 34 is applied. Patterning. The pattern of the cured photoresist 34 has, for example, a substantially concentric shape with different diameters. Subsequently, as shown in FIG. 6B, etching is performed to form a groove on the main surface of the second substrate 31. Subsequently, as shown in FIG. 6C, the photoresist 34 is removed, and at least one submaterial of the first material 28 and the second material 29 is replaced with an arbitrary material such as vapor deposition or plating. Deposit by processing. When depositing two or more sub-materials, the above-described patterning, etching, and processing for depositing the sub-material are performed for each sub-material. Subsequently, as shown in FIG. 6D, a flattening process is performed, and the silicon oxide film 32 and the silicon nitride film 33 are removed. Then, as shown in FIG. 6E, for example, a silicon nitride film is laminated to form the adhesion sublayer 27.

(Step of joining the first substrate and the second substrate)
Next, a process performed by bonding the first substrate 30 and the second substrate 31 will be described. First, as shown in FIG. 7A, the adhesion sublayer 22 of the first substrate 30 and the adhesion sublayer 27 of the second substrate 31 are bonded. Subsequently, as shown in FIG. 7B, the other main surface of the first substrate 30 is polished. Here, for example, polishing is performed until the photodiode 25 is exposed on the surface to be polished, and the photoelectric conversion sublayer 20 is formed. Subsequently, as illustrated in FIG. 7C, the color filter 23 and the microlens 24 are disposed on the photoelectric conversion sublayer 20. In this way, the first layer 18 including the adhesion sublayer 22, the wiring sublayer 21, the photoelectric conversion sublayer 20, the color filter 23, and the microlens 24 is formed. Subsequently, as shown in FIG. 7D, the top and bottom of the second substrate 31 on which the first layer 18 is formed are inverted. Then, as shown in FIG. 7E, the other main surface of the second substrate 31 is polished. Here, for example, polishing is performed until the first material 28 or the second material 29 is exposed on the surface to be polished, and the support sublayer 26 is formed. In this way, the second layer 19 including the support sublayer 26 and the adhesion sublayer 27 is formed. Through the above-described steps, an imaging element wafer including the first layer 18 and the second layer 19 is obtained.

  Next, with reference to the flowchart of FIG. 8, the flow of the process for forming the first layer 18 and the second layer 19 described above will be described.

  Step S100: First, the photodiode 25 and the MOS transistor are formed on one main surface of the first substrate 30.

  Step S101: Subsequently, the wiring sublayer 21 is formed on the main surface of the first substrate 30, and, for example, a silicon nitride film is laminated to further form the adhesion sublayer 22.

  Step S102: Next, a silicon oxide film 32, a silicon nitride film 33, and a pattern of a photoresist 34 are formed on one main surface of the second substrate 31, and the second substrate 31 is etched. Grooves are formed in the main surface of.

  Step S103: Subsequently, the photoresist 34 of the second substrate 31 is removed, and at least one of the first material 28 and the second material 29 is deposited as a secondary material.

  Step S104: Subsequently, a planarization process is performed on the second substrate 31, and the silicon oxide film 32 and the silicon nitride film 33 are removed.

  Step S105: Subsequently, for example, a silicon nitride film is stacked on the second substrate 31 to form the adhesion sublayer 27.

  Step S106: Next, the adhesion sublayer 22 of the first substrate 30 and the adhesion sublayer 27 of the second substrate 31 are bonded.

  Step S107: Subsequently, the other main surface of the first substrate 30 with respect to the one main surface in Step S100 is polished to form the photoelectric conversion sublayer 20.

  Step S108: Subsequently, the color filter 23 and the microlens 24 are disposed on the photoelectric conversion sublayer 20. In this way, the first layer 18 including the adhesion sublayer 22, the wiring sublayer 21, the photoelectric conversion sublayer 20, the color filter 23, and the microlens 24 is formed.

  Step S109: Subsequently, the other main surface of the second substrate 31 with respect to the one main surface in Step S102 is polished. In this embodiment, for example, polishing is performed until the auxiliary material is exposed on the surface to be polished, and the support sublayer 26 is formed. In this way, the second layer 19 including the adhesion sublayer 27 and the support sublayer 26 is formed.

  Next, with reference to the flowchart of FIG. 9, the flow of processing steps for the image sensor wafer on which the first layer 18 and the second layer 19 are formed will be described. This process is incorporated into a subsequent process of the semiconductor process, for example.

  Step S200: First, dicing is performed to cut the image sensor wafer into a desired chip size.

  Step S201: Subsequently, die bonding is performed, and the image sensor 12 cut to a desired chip size is bonded to the package substrate 15. For example, the image sensor 12 is bonded to the lead frame of the package substrate 15 by adhesion. In the present embodiment, the image sensor 12 is bonded to the package substrate 15 in a state where the uneven shape of the image sensor 12 is maintained.

  Step S202: Then, wire bonding is performed to connect the pads of the image sensor 12 and the pads of the package substrate 15.

  As described above, the imaging device 12 according to the first embodiment includes the first layer 18 and the second layer 19 in which the main material and the submaterial are alternately arranged. At least a part of the main surface of the first layer 18 opposite to the second layer 19, that is, the main surface on the front surface side of the first layer 18 is concave or convex. Here, the second layer 19 that contributes to the formation of the concavo-convex shape can be formed, for example, by the polishing in step S109 described above (see FIG. 8) in the previous step of the semiconductor process. For this reason, in order to obtain a desired concavo-convex shape, an additional process after the polishing in step S109, that is, an additional process is not required when the imaging element 12 is relatively thin. The increase of is suppressed.

  In addition, the imaging element 12 having a concavo-convex shape is particularly suitable for an imaging apparatus that has a large principal ray incident angle, for example, an imaging apparatus that uses a wide-angle lens with a wide angle of view. For example, in an imaging device including a wide-angle lens, when the imaging device 12 has a flat shape, the degree of contraction of the subject image differs between the central portion and the peripheral portion of the imaging region of the imaging device 12. For this reason, the subject is imaged distorted in the peripheral region of the captured image. On the other hand, by providing a desired concavo-convex shape on the image sensor 12, the difference in the degree of contraction of the subject image between the central portion and the peripheral portion of the imaging region can be reduced. For this reason, the distortion of the subject is reduced in the peripheral region on the captured image.

  Further, the secondary material contained in the second layer 19 expands or contracts after the second layer 19 is formed, for example, after the polishing in step S109. Therefore, in the previous step of the semiconductor process, the substrate is prevented from being bent due to expansion or contraction of the secondary material after the secondary material is deposited and before the second layer 19 is formed. Increase is suppressed.

  The image sensor 12 is a back-illuminated image sensor. In general, a back-illuminated imaging device is manufactured by bonding a support substrate to a substrate on which a photodiode, a wiring layer, or the like is formed. Therefore, the support substrate can be used as the second substrate 31 according to the present embodiment, an increase in cost is suppressed, and the imaging element can be thinned.

  The imaging element 12 has a different shape of the main surface on the front surface side of the first layer 18 according to the distribution of the secondary material in the second layer 19 in the first direction. For example, in the case where the secondary material is the first material 28 (shrinkage film or tensile stress film), the region where the secondary material is distributed more, the shape of the main surface on the front surface side of the first layer 18 has a larger curvature. It becomes a shape. Alternatively, in the case where the secondary material is the first material 28 (shrinkage film or tensile stress film), the region where the secondary material is distributed more, the shape of the main surface on the front side of the first layer 18 is a concave having a large curvature. It becomes a shape. Therefore, by adjusting the distribution of the secondary material in the second layer 19 in the first direction, the imaging element 12 can be formed into an arbitrary curved shape.

  In addition, each of the main material and the submaterial in the second layer 19 is arranged in a substantially concentric manner in the second layer 19. Therefore, for example, the center point of the concentric circle is located on the optical axis 16 of the imaging optical system 11 and the light passing through the imaging optical system 11, that is, the subject image is formed on the light receiving surface of the imaging element 12. By disposing the image pickup element 12 in the housing of the image pickup apparatus 10, the distortion of the subject in the circumferential portion of the picked-up image is evenly reduced.

  Further, according to the method for manufacturing the image pickup device 12 according to the first embodiment, the photodiode 25 is formed on one main surface of the first substrate 30 and formed on one main surface of the second substrate 31. A secondary material is deposited in the groove and the first substrate 30 and the second substrate 31 are bonded together, and then the other main surface of the first substrate 30 is polished to form the photoelectric conversion sublayer 20, The support main layer 26 is formed by polishing the other main surface of the substrate 31. Here, in the polishing for forming the support sublayer 26, the polishing end point can be determined on the basis of the thickness of the secondary material deposited on the second substrate 31, so that the film thickness controllability is improved.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. As an outline, the image sensor 12 according to the second embodiment is different from the first embodiment in the material of the secondary material included in the second layer 19. In addition, in the method for manufacturing the imaging device 10 according to the second embodiment, the timing of ending the polishing (step S109) performed to form the second layer 19 and the bonding method in die bonding (step S201) are described. Details differ from the first embodiment. Hereinafter, differences from the first embodiment will be described.

  As in the first embodiment, the main material region and the sub material region are alternately arranged in the first direction on the support sub layer 26 of the second layer 19 included in the imaging device 12. For example, the main material (for example, silicon) of the support sublayer 26 and the third material that is the submaterial are alternately arranged. The third material is a material having a hardness different from that of the main material, for example, a metal material or an inorganic material. For example, tungsten or copper can be used as the metal material. As the inorganic material, for example, silicon nitride, silicon oxide, theos film, etc. can be adopted.

  Next, polishing (step S109) performed for forming the second layer 19 will be described. In the present embodiment, for example, the polishing is continued for a predetermined time from the timing when the secondary material is exposed on the surface to be polished (hereinafter, also referred to as overpolishing), and then ends. As described above, the hardness of the main material and the submaterial included in the second layer 19 are different. For this reason, for example, when the hardness of the secondary material is larger than the hardness of the main material, the main material is more polished by overpolishing. In addition, in a region where the main material and the sub material are alternately arranged, the polishing rate of the region can be controlled by adjusting the distribution of the sub material in the first direction. For this reason, at least a part of the surface to be polished, that is, the main surface on the back surface side of the image sensor 12 has a concave shape or a convex shape. FIG. 10A illustrates an example in which the entire main surface 35 on the back side of the image sensor 12 is concave. As will be described later, the shape of the main surface 35 on the back side of the image sensor 12 is transferred to the shape of the light receiving surface 36 of the image sensor 12. Here, the material of each material, the distribution of the sub-material in the first direction, and the time for overpolishing are arbitrarily determined according to the desired shape of the light receiving surface 36 of the image sensor 12.

  Next, details of the bonding method (step S201) in die bonding will be described. In this embodiment, at the time of die bonding, the image pickup device 12 is bonded to the package substrate 15 while being sucked. By suction, the shape of the main surface 35 on the back side of the image sensor 12 is transferred to the shape of the light receiving surface 36 of the image sensor 12. For example, FIG. 10B shows an example in which the image pickup device 12 shown in FIG. 10A, that is, the image pickup device 12 having a concave main surface 35 on the back side is joined to the package substrate 15 while being sucked. It is shown. In FIG. 10B, the light receiving surface 36 of the image sensor 12 (and the main surface on the front side of the first layer) has a concave shape by transferring the shape of the main surface 35 on the back side.

  As described above, the imaging element 12 according to the second embodiment includes at least one of the main surface of the second layer 19 opposite to the first layer 18, that is, the main surface 35 on the back side of the second layer 19. The part is concave or convex. Here, the concavo-convex shape of the main surface 35 on the back surface side of the second layer 19 is formed, for example, by the polishing in step S109 described above (see FIG. 8) in the previous step of the semiconductor process. Thus, in the same manner as in the first embodiment, in order to obtain a desired uneven shape, an additional process after the polishing in step S109, that is, an additional process in a state where the thickness of the image sensor 12 is relatively thin. Therefore, an increase in manufacturing difficulty of the image sensor 12 is suppressed.

  In addition, the imaging element 12 has a different shape of the main surface on the back side of the second layer 19 in accordance with the distribution of the secondary material in the second layer 19 in the first direction. For example, when the hardness of the secondary material is larger than the hardness of the primary material, the polishing rate decreases as the secondary material is distributed more. Therefore, by adjusting the distribution of the secondary material in the second layer 19 in the first direction, the imaging element 12 can be formed into an arbitrary curved shape.

  Although the present invention has been described based on the drawings and embodiments, it should be noted that those skilled in the art can easily make various changes and modifications based on the present disclosure. Therefore, it should be noted that these variations and modifications are included in the scope of the present invention. For example, the functions included in each means, each step, etc. can be rearranged so as not to be logically contradictory, and a plurality of means, steps, etc. can be combined into one or divided. .

  In the above-described embodiment, the back-illuminated image sensor has been described as an example. However, the back-illuminated image sensor can also be used.

DESCRIPTION OF SYMBOLS 10 Image pick-up apparatus 11 Image pick-up optical system 12 Image pick-up element 13 Image processing part 14 Control part 15 Package board 16 Optical axis 17 Light 18 1st layer 19 2nd layer 20 Photoelectric conversion sublayer 21 Wiring sublayer 22 Adhesion sublayer 23 Color Filter 24 Microlens 25 Photodiode 26 Support sublayer 27 Adhesion sublayer 28 First material 29 Second material 30 First substrate 31 Second substrate 32 Silicon oxide film 33 Silicon nitride film 34 Photoresist 35 Main surface 36 Photosensitive surface

Claims (8)

A first layer having an imaging function, in which a plurality of pixels are arranged in at least a first direction;
A second layer bonded to the first layer,
The second layer has a support sublayer in which main material regions and submaterial regions are alternately arranged along the first direction;
At least a part of the first main surface of the first layer opposite to the second layer, and at least one of the second main surface of the second layer opposite to the first layer. An image sensor in which at least one of the parts has a concave shape or a convex shape. The imaging device according to claim 1,
The image pickup device, wherein the sub-material expands or contracts after the second layer is formed. The imaging device according to claim 1 or 2,
By polishing the second main surface, a concave shape or a convex shape is formed on at least a part of the second main surface,
The imaging device, wherein when the second main surface is bonded to a package substrate, the shape of the second main surface is transferred to the first main surface.   The imaging device according to claim 1, wherein the imaging device is configured as a backside illumination type. The imaging device according to any one of claims 1 to 4,
According to the distribution of the sub-material in the second layer in a direction parallel to the main surface of the second layer, at least one of the shape of the first main surface and the shape of the second main surface is Different image sensor. The imaging device according to any one of claims 1 to 5,
The image pickup device, wherein the sub-material is arranged substantially concentrically in the second layer. An imaging apparatus comprising an imaging element and an imaging optical system,
The image sensor is
A first layer having an imaging function in which a plurality of pixels are arranged in at least a first direction; and a second layer bonded to the first layer;
The second layer has a support sublayer in which main material regions and submaterial regions are alternately arranged along the first direction;
At least a part of the first main surface of the first layer opposite to the second layer, and at least one of the second main surface of the second layer opposite to the first layer. At least one of the parts is concave or convex,
The imaging optical system is
Forming a subject image on the light-receiving surface of the first layer;
Imaging device. Forming a photodiode on one main surface of the first substrate;
Forming an adhesion sub-layer on one main surface side of the first substrate;
Depositing a sub-material different from the main material of the second substrate in a groove formed in a predetermined pattern on one main surface of the second substrate;
Forming an adhesion sub-layer on one main surface side of the second substrate;
Bonding the adhesion sublayer of the first substrate and the adhesion sublayer of the second substrate;
Polishing the other main surface with respect to one main surface of the first substrate to form a photoelectric conversion sublayer;
Polishing the other main surface of the second substrate with respect to one main surface to form a support sub-layer,
An imaging device in which at least one of at least a part of the other main surface of the first substrate and at least a part of the other main surface of the second substrate is concave or convex. Production method.

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