JP2016152303A - Delivery device and method of wafer - Google Patents

Delivery device and method of wafer Download PDF

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JP2016152303A
JP2016152303A JP2015028569A JP2015028569A JP2016152303A JP 2016152303 A JP2016152303 A JP 2016152303A JP 2015028569 A JP2015028569 A JP 2015028569A JP 2015028569 A JP2015028569 A JP 2015028569A JP 2016152303 A JP2016152303 A JP 2016152303A
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wafer
suction surface
negative pressure
holding member
water
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JP6402047B2 (en
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青木 仁
Hitoshi Aoki
仁 青木
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Tokyo Seimitsu Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a delivery device and method of a wafer which allow for reliable delivery of the wafer to a wafer receiving member.SOLUTION: A delivery device of a wafer includes: a wafer transport holding member 16 having a flat suction surface 17 to which a wafer W is vacuum sucked; a chuck table 51 receiving the wafer W transported by the wafer transport holding member 16; a negative pressure generating section 55 generating a negative pressure for sucking the wafer W to the suction surface 17 of the wafer transport holding member 16; an exfoliation water supply section 22 for generating a water flow supplied between the suction surface 17 and the wafer W and discharged from the outer peripheral side of the wafer W; and a control section 26 for controlling generation and stop of the negative pressure by the negative pressure generating section 55, and discharge and stop of the exfoliation water by the exfoliation water supply section 22.SELECTED DRAWING: Figure 2

Description

本発明は、ウエハの受け渡し装置及び方法に関するものであり、特に、搬送保持部材の吸着面にウエハを負圧で吸着保持して所定の位置まで搬送し、その所定の位置において被受け渡し部材側に受け渡すためのウエハの受け渡し装置及び方法に関するものである。   The present invention relates to a wafer delivery apparatus and method, and more particularly to a wafer held by suction on a suction surface of a carrier holding member with a negative pressure and conveyed to a predetermined position. The present invention relates to a wafer delivery apparatus and method for delivery.

半導体製造の分野では、シリコンウエハ等の半導体ウエハ(以下、単に「ウエハ」という)を複数の工程箇所に順次搬送して、各種の加工処理を施している。また、近年は、ウエハの大型化及び薄型化が進み、ウエハの反りや撓みが生じ易い。そのため、反りや撓みが生じるウエハを確実に搬送するための工夫もいろいろ提案されている。   In the field of semiconductor manufacturing, semiconductor wafers such as silicon wafers (hereinafter simply referred to as “wafers”) are sequentially transferred to a plurality of process locations and subjected to various types of processing. In recent years, wafers have become larger and thinner, and the wafer is likely to warp or bend. For this reason, various ideas have been proposed for reliably transporting a wafer that is warped or bent.

例えば、ウエハを各工程に搬送する際、特開平9−64152号公報(特許文献1)には、搬送保持部材でウエハの外周部分を複数個の吸盤で吸着保持し、所定の位置に搬送されたら、その吸着保持を解除して受け渡し部材側に受け渡すようにした技術が知られている。この受け渡し技術では、複数個の吸盤でウエハをピンポイントで吸着保持するので、薄いウエハの場合には破損の問題が発生する。   For example, when transporting a wafer to each process, Japanese Patent Laid-Open No. 9-64152 (Patent Document 1) discloses that a peripheral portion of a wafer is sucked and held by a plurality of suction cups by a transport holding member and transported to a predetermined position. Then, a technique is known in which the suction holding is released and the delivery is transferred to the delivery member side. In this delivery technique, the wafer is pinpointed and held by a plurality of suction cups, which causes a problem of damage in the case of a thin wafer.

そこで、例えば特開平10−209247号公報(特許文献2)に開示のように、搬送保持部材に設けた吸着面に負圧を発生させ、その吸着面にウエハの一面略全体を吸着保持し、所定の位置に搬送されたら、その吸着保持を解除して受け渡し部材側に受け渡す技術が知られている。この方法では、所定の位置で負圧を取り除いて吸着保持を解除したときに、ウエハが搬送保持部材の吸着面に表面張力でピッタリと貼り付いた状態になり、そのウエハが吸着面からスムーズに剥がれず、被受け渡し部材に対してウエハを受け渡すことができないという問題点があった。これを解決するために、所定の位置において、搬送保持部材側の吸着保持を解除すると同時に、その搬送保持部材の吸着面側からウエハの一面に向けてエアを吹き付け、吸着面からウエハを強制的に引き剥がすようにした技術も知られている。   Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 10-209247 (Patent Document 2), a negative pressure is generated on the suction surface provided on the conveyance holding member, and the entire surface of the wafer is suction-held on the suction surface, A technique is known in which, after being transported to a predetermined position, the suction holding is released and the material is delivered to the delivery member side. In this method, when the negative pressure is removed at a predetermined position and the suction holding is released, the wafer is firmly attached to the suction surface of the transport holding member by the surface tension, and the wafer is smoothly removed from the suction surface. There is a problem that the wafer cannot be delivered to the delivery member without being peeled off. In order to solve this problem, at a predetermined position, the suction holding on the transport holding member side is released, and at the same time, air is blown from the suction surface side of the transport holding member toward one surface of the wafer, forcing the wafer from the suction surface. There is also known a technique that peels it off.

特開平9−64152号公報。JP-A-9-64152. 特開平10−209247号公報。Japanese Patent Laid-Open No. 10-209247.

しかしながら、搬送を終えた位置で、搬送保持部材の吸着面側からウエハの一面にエアを吹き付け、その吹き付け力でウエハを吸着面から強制的に引き剥がすようにした技術では、エアを吹き付けるときに、そのエアの中に混じっていた塵がウエハに直接吹き付けられて付着、あるいは受け渡し部材側の周囲の塵が巻き上げられて付着する等して、ウエハを汚染してしまう恐れがあった。   However, in the technique in which air is blown from the suction surface side of the transport holding member to one surface of the wafer at the position where the transport is finished, and the wafer is forcibly separated from the suction surface by the spray force, There is a possibility that the dust mixed in the air is directly sprayed on and adhered to the wafer, or the dust around the transfer member is wound up and adhered to contaminate the wafer.

そこで、ウエハを搬送保持部材の吸着面に負圧で吸着保持して所定の位置まで搬送し、その所定の位置において、ウエハに塵などを付着させることなく、被受け渡し部材側にウエハを確実に受け渡すことができるようにしたウエハの受け渡し装置及び方法を提供するために解決すべき技術的課題が生じてくるのであり、本発明はこの課題を解決することを目的とする。   Therefore, the wafer is sucked and held on the suction surface of the carrier holding member with a negative pressure and transported to a predetermined position. At the predetermined position, the wafer is securely placed on the receiving member side without adhering dust or the like to the wafer. There is a technical problem to be solved in order to provide a wafer transfer apparatus and method which can be transferred, and the present invention aims to solve this problem.

本発明は上記目的を達成するために提案されたものであり、請求項1に記載の発明は、ウエハを搬送する際に使用するウエハの受け渡し装置であって、前記ウエハが吸着保持される平坦な吸着面を有したウエハ搬送保持部材と、前記ウエハ搬送保持部材により搬送されて来た前記ウエハが受け取られるウエハ受取部材と、前記ウエハ搬送保持部材の前記吸着面に前記ウエハが吸着保持される負圧を発生させる負圧発生部と、前記吸着面と前記ウエハとの間に剥離水を供給して該ウエハの外周側から排出される水の流れを生成する剥離水供給部と、前記負圧発生部による前記負圧の発生・停止と前記剥離水供給部による前記剥離水の吐出・停止を制御する制御手段と、を備えるウエハの受け渡し装置を提供する。   The present invention has been proposed in order to achieve the above object, and the invention according to claim 1 is a wafer transfer device used for transporting a wafer, and is a flat surface on which the wafer is sucked and held. A wafer carrying / holding member having an attractive suction surface, a wafer receiving member for receiving the wafer carried by the wafer carrying / holding member, and the wafer held by suction on the suction surface of the wafer carrying / holding member A negative pressure generating section for generating a negative pressure, a stripping water supply section for supplying stripping water between the suction surface and the wafer to generate a flow of water discharged from the outer peripheral side of the wafer, and the negative pressure There is provided a wafer delivery apparatus comprising: control means for controlling generation / stop of the negative pressure by a pressure generation unit and discharge / stop of the release water by the release water supply unit.

この構成によれば、ウエハ搬送保持部材の吸着面に発生する負圧で、ウエハの一面全体をその吸着面に吸着させて搬送することができるので、ウエハの割れによる破損を防止できる。また、搬送を終えた所定の位置で吸着面側の負圧を断つとともに、ウエハ搬送保持部材の吸着面側からウエハと間に剥離水を吐出させ、その剥離水を前記吸着面と前記ウエハとの間に流すことにより、その吸着面とウエハとの間に発生する表面張力が断ち切られ、ウエハがウエハ搬送保持部材の吸着面から簡単に剥がれて、その剥がれたウエハをウエハ受取部材側に確実に渡すことができる。   According to this configuration, the entire surface of the wafer can be adsorbed and conveyed by the negative pressure generated on the adsorption surface of the wafer conveyance holding member, so that breakage due to cracking of the wafer can be prevented. Further, the negative pressure on the suction surface side is cut off at a predetermined position after the transfer, and peeling water is discharged from the suction surface side of the wafer transfer holding member to the wafer, and the peeling water is discharged between the suction surface and the wafer. , The surface tension generated between the suction surface and the wafer is cut off, the wafer is easily peeled off from the suction surface of the wafer transfer holding member, and the peeled wafer is surely attached to the wafer receiving member side. Can be passed to.

請求項2に記載の発明は、請求項1に記載の構成において、前記吸着面には、前記ウエハを吸引する孔または環状の溝と、該ウエハに剥離水を吐出する孔または溝を有する、ウエハの受け渡し装置を提供する。   The invention according to claim 2 is the configuration according to claim 1, wherein the suction surface has a hole or an annular groove for sucking the wafer and a hole or a groove for discharging peeling water to the wafer. Provided is a wafer transfer device.

この構成によれば、ウエハ搬送保持部材の吸着面に設けた孔または環状の溝を利用して、ウエハの吸引と剥離水の吐出を交互に行わせることができる。   According to this configuration, it is possible to alternately perform the suction of the wafer and the discharge of the peeling water by using the hole or the annular groove provided on the suction surface of the wafer conveyance holding member.

請求項3記載の発明は、請求項1または2に記載の構成において、前記ウエハを吸引する孔または環状の溝、と該ウエハに剥離水を吐出する孔または環状の溝は、共通の孔または溝である、ウエハの受け渡し装置を提供する。   According to a third aspect of the present invention, in the configuration according to the first or second aspect, the hole or annular groove for sucking the wafer and the hole or annular groove for discharging peeling water to the wafer are a common hole or Provided is a wafer transfer device which is a groove.

この構成によれば、ウエハを吸引する孔または環状の溝と、ウエハに剥離水を吐出する孔または環状の溝を、共通の孔または溝とすることにより、孔または溝の数を減らして構造の簡略化を図ることができるので、コストの低減が可能になる。   According to this configuration, the number of holes or grooves is reduced by making the hole or annular groove for sucking the wafer and the hole or annular groove for discharging the peeling water to the wafer a common hole or groove. Therefore, the cost can be reduced.

請求項4記載の発明は、請求項1、2または3に記載の構成において、前記環状の溝は、略同心状にして複数個設けられている、ウエハの受け渡し装置を提供する。   According to a fourth aspect of the present invention, there is provided a wafer transfer apparatus according to the first, second, or third aspect, wherein a plurality of the annular grooves are provided substantially concentrically.

この構成によれば、吸着面におけるウエハの吸着保持力は、偏ることなく円板全体に平均して掛けられるので、ウエハを吸着面に安定的した状態で吸引保持することができる。一方、ウエハに剥離水を吐出させる場合は、吸着面から円周状に水が吐出されて、それが中心側から外周側に向かって均等に流されるので、ウエハに対する表面張力を均等に無くして、ウエハを吸着面からスムーズに剥がすことができる。   According to this configuration, since the suction holding force of the wafer on the suction surface is applied to the whole disk on average without being biased, the wafer can be sucked and held on the suction surface in a stable state. On the other hand, when the peeling water is discharged to the wafer, the water is discharged from the suction surface in a circumferential shape and flows uniformly from the center side toward the outer peripheral side, so that the surface tension on the wafer is evenly eliminated. The wafer can be smoothly peeled off from the suction surface.

請求項5記載の発明は、ウエハ搬送保持部材の吸着面に発生させる負圧でウエハを吸着面に吸着保持して所定位置に搬送し、ウエハ受取部材上に受け渡すウエハの受け渡し方法であって、前記所定の位置で前記負圧による吸着保持力を取り除き、その後、前記吸着面から前記ウエハに向けて剥離水を吐出させる、ウエハの受け渡し方法を提供する。   The invention according to claim 5 is a wafer delivery method in which the wafer is sucked and held on the suction surface by a negative pressure generated on the suction surface of the wafer transport and holding member, transported to a predetermined position, and delivered to the wafer receiving member. There is provided a wafer delivery method in which the suction holding force due to the negative pressure is removed at the predetermined position, and then the peeling water is discharged from the suction surface toward the wafer.

この方法によれば、ウエハ搬送保持部材の吸着面にウエハの一面全体を吸着させて搬送されて来たウエハを、その吸着面側の負圧を断ち、その後、ウエハ搬送保持部材の吸着面側からウエハの一面に向けて剥離水を吐出させると、ウエハ搬送保持部材の吸着面とウエハとの間に発生していた表面張力が取り除かれ、ウエハ搬送保持部材の吸着面からウエハをスムーズに剥がしてウエハ受取部材側に確実に受け渡すことができる。   According to this method, the negative pressure on the suction surface side of the wafer that has been transported by attracting the entire surface of the wafer to the suction surface of the wafer transport holding member is cut off, and then the suction surface side of the wafer transport holding member When the release water is discharged from one side to the other side of the wafer, the surface tension generated between the suction surface of the wafer transfer holding member and the wafer is removed, and the wafer is smoothly peeled off from the suction surface of the wafer transfer holding member. Thus, the wafer can be reliably delivered to the wafer receiving member side.

請求項6記載の発明は、請求項5に記載の方法において、前記ウエハ搬送保持部材の吸着面に負圧を発生させて前記ウエハを前記所定の位置の近傍まで搬送するステップと、前記ウエハ受取部材側の吸着面に負圧を発生させるステップと、前記ウエハ搬送保持部材側の吸着面に発生している負圧を断つステップと、前記ウエハ搬送保持部材側の前記吸着面から前記ウエハに向けて剥離水を吐出させ、該剥離水を前記吸着面と前記ウエハとの間に流して該ウエハの外周から排出させるステップ、とを経て処理する、ウエハの受け渡し方法を提供する。   According to a sixth aspect of the present invention, in the method according to the fifth aspect, a step of generating a negative pressure on the suction surface of the wafer conveyance holding member to convey the wafer to the vicinity of the predetermined position; A step of generating a negative pressure on the suction surface on the member side, a step of cutting off the negative pressure generated on the suction surface on the wafer transfer holding member side, and a direction from the suction surface on the wafer transfer holding member side toward the wafer A method of delivering a wafer by discharging the peeling water, allowing the peeling water to flow between the adsorption surface and the wafer and discharging from the outer periphery of the wafer.

この方法によれば、ウエハをウエハ搬送保持部材の吸着面に吸着保持して所定の位置の近傍まで搬送したら、ウエハ受取部材側の吸着面に負圧を発生させるとともに、ウエハ搬送保持部材側の吸着面による負圧(吸着保持力)を断つ。その後、ウエハ搬送保持部材側の吸着面からウエハに向けて剥離水を吐出させ、その剥離水を前記吸着面と前記ウエハとの間に流してウエハの外周から排出させる。そして、剥離水を前記吸着面と前記ウエハとの間に流すと、その吸着面とウエハとの間に発生する表面張力が断ち切られ、ウエハがウエハ搬送保持部材側の吸着面から簡単に剥がれて、その剥がれたウエハをウエハ受取部材側に確実に渡すことができる。   According to this method, when the wafer is sucked and held on the suction surface of the wafer transport holding member and transported to the vicinity of a predetermined position, a negative pressure is generated on the suction surface on the wafer receiving member side, and the wafer transport holding member side Cut off the negative pressure (suction holding force) by the suction surface. Thereafter, peeling water is discharged toward the wafer from the suction surface on the wafer transfer holding member side, and the peeling water flows between the suction surface and the wafer to be discharged from the outer periphery of the wafer. Then, when peeling water flows between the suction surface and the wafer, the surface tension generated between the suction surface and the wafer is cut off, and the wafer is easily peeled off from the suction surface on the wafer transfer holding member side. The peeled wafer can be reliably transferred to the wafer receiving member side.

請求項7記載の発明は、請求項5または6に記載の方法において、前記剥離水を、前記ウエハと略同心状に吐出する、ウエハの受け渡し方法を提供する。   A seventh aspect of the invention provides a method for transferring a wafer according to the fifth or sixth aspect, wherein the peeling water is discharged substantially concentrically with the wafer.

この方法によれば、剥離水はウエハの略中心から外周側に向かって放射状に万遍なく流れるので、ウエハ搬送保持部材側の吸着面とウエハとの間の表面張力を万遍なく無くして、ウエハを吸着面からスムーズに剥がすことができる。   According to this method, since the peeling water flows uniformly from the center of the wafer toward the outer peripheral side, the surface tension between the suction surface on the wafer transfer holding member side and the wafer is uniformly eliminated, The wafer can be smoothly peeled off from the suction surface.

本発明によれば、ウエハ搬送保持部材の吸着面にウエハの一面全体を吸着させて搬送されて来たウエハを、その吸着面側の負圧を断ち、その後、ウエハ搬送保持部材の吸着面側からウエハの一面に向けて剥離水を吐出させ、ウエハ搬送保持部材の吸着面とウエハとの間に発生していた表面張力を取り除いてウエハ受取部側に受け渡すので、ウエハに塵などを付着させることなく、スムーズに、そして確実にウエハをウエハ受取部材側に受け渡すことができる。   According to the present invention, the negative pressure on the suction surface side of the wafer that has been transported by attracting the entire surface of the wafer to the suction surface of the wafer transport holding member is cut off, and then the suction surface side of the wafer transport holding member The release water is discharged from one side to the other side of the wafer, the surface tension generated between the suction surface of the wafer transfer holding member and the wafer is removed, and the wafer is transferred to the wafer receiving part. Therefore, the wafer can be transferred smoothly and reliably to the wafer receiving member side.

本発明の一実施形態を示し、半導体製造工程においてウエハの受け渡し装置を構成している主要構成部品の概略配置図である。FIG. 2 is a schematic arrangement view of main components constituting a wafer transfer apparatus in a semiconductor manufacturing process according to an embodiment of the present invention. 図1に示す同上受け渡し装置を、チャックプレートをチャックテーブルに接近させる前の状態で示す概略側面図である。It is a schematic side view which shows the delivery apparatus shown in FIG. 1 in the state before making a chuck plate approach a chuck table. 図1に示す同上受け渡し装置を、チャックプレートをチャックテーブルに接近させた後の状態で示す概略側面図である。It is a schematic side view which shows the delivery apparatus shown in FIG. 1 in the state after making a chuck plate approach a chuck table. 同上受け渡し装置のウエハ搬送保持部材における吸着面の平面図である。It is a top view of the adsorption | suction surface in the wafer conveyance holding member of a delivery apparatus same as the above. 図4のA−A線概略断面図である。It is an AA line schematic sectional drawing of FIG. 同上受け渡し装置のウエハ受取部材における吸着面の平面図である。It is a top view of the adsorption | suction surface in the wafer receiving member of a delivery apparatus same as the above. 図6のB−B線概略断面図である。It is a BB schematic sectional drawing of FIG. 同上受け渡し装置のウエハ受け渡し動作手順を説明する図である。It is a figure explaining the wafer delivery operation | movement procedure of a delivery apparatus same as the above. 同上受け渡し装置のウエハ搬送保持部材における吸着面の一変形例を示す平面図である。It is a top view which shows the modification of the attraction | suction surface in the wafer conveyance holding member of a delivery apparatus same as the above. 図9のC−C線概略断面図である。It is CC sectional schematic sectional drawing of FIG.

本発明は、ウエハを搬送保持部材の吸着面に負圧で吸着保持して所定の位置まで搬送し、その所定の位置で塵などを付着させることなく、ウエハをウエハ受取部材に対し確実に受け渡すことができるようにしたウエハの受け渡し装置及び方法を提供するという目的を達成するために、ウエハを搬送する際に使用するウエハの受け渡し装置であって、前記ウエハが吸着保持される平坦な吸着面を有したウエハ搬送保持部材と、前記ウエハ搬送保持部材により搬送されて来た前記ウエハが受け取られるウエハ受取部材と、前記ウエハ搬送保持部材の前記吸着面に前記ウエハが吸着保持される負圧を発生させる負圧発生部と、前記吸着面と前記ウエハとの間に剥離水を供給して該ウエハの外周側から排出される水の流れを生成する剥離水供給部と、前記負圧発生部による前記負圧の発生・停止と前記剥離水供給部による前記剥離水の吐出・停止を制御する制御手段と、を備えるようにして実現した。   In the present invention, the wafer is sucked and held on the suction surface of the carrier holding member with a negative pressure and conveyed to a predetermined position, and the wafer is reliably received by the wafer receiving member without adhering dust or the like at the predetermined position. In order to achieve the object of providing a wafer delivery apparatus and method that can be delivered, a wafer delivery apparatus used for transporting a wafer, wherein the wafer is attracted and held flat A wafer transfer holding member having a surface, a wafer receiving member for receiving the wafer transferred by the wafer transfer holding member, and a negative pressure at which the wafer is sucked and held on the suction surface of the wafer transfer holding member A negative pressure generating unit that generates a separation water supply unit that generates a flow of water discharged from the outer peripheral side of the wafer by supplying separation water between the adsorption surface and the wafer; Serial was realized as and a control device which controls the ejection-stop of the release water by the negative pressure generated or stop and of the release water supply unit due to the negative pressure generating portion.

以下、本発明の実施形態によるウエハの受け渡し装置を図1乃至図7を参照しながら好適な実施例について詳細に説明する。   Hereinafter, a preferred embodiment of a wafer transfer apparatus according to an embodiment of the present invention will be described in detail with reference to FIGS.

図1は本発明の一実施例として示す半導体製造工程において受け渡し装置を構成している主要部品の概略構成配置図、図2は図1に示す同上受け渡し装置を、チャックプレートをチャックテーブルに接近させる前の状態で示す概略側面図、図3は図1に示す同上受け渡し装置を、チャックプレートをチャックテーブルに接近させた後の状態で示す概略側面図、図4は同上受け渡し装置のウエハ搬送保持部材における吸着面の平面図、図5は図4のA−A線概略断面図、図6は受け渡し装置のウエハ受取部材における吸着面の平面図、図7は図6のB−B線概略断面図である。   FIG. 1 is a schematic arrangement view of main components constituting a delivery device in a semiconductor manufacturing process shown as an embodiment of the present invention. FIG. 2 is a diagram showing the delivery device shown in FIG. FIG. 3 is a schematic side view showing the same delivery apparatus shown in FIG. 1, and FIG. 4 is a schematic side view showing a state after the chuck plate is brought close to the chuck table. FIG. 4 is a wafer conveyance holding member of the delivery apparatus. FIG. 5 is a schematic cross-sectional view taken along line AA in FIG. 4, FIG. 6 is a plan view of the suction face in the wafer receiving member of the delivery apparatus, and FIG. 7 is a schematic cross-sectional view taken along line BB in FIG. It is.

なお、図1乃至図7において、受け渡し装置10は、半導体製造工程内における研削工程箇所において、荒削り工程箇所101で荒削り加工を終えた薄くスライスされている概略円板状のウエハWを、仕上げ研削工程箇所102のチャックテーブル51上に搬送する場合を一例として示すが、本発明はこれに限定されるものではない。   1 to 7, the delivery apparatus 10 finish-grinds a thinly sliced substantially disk-shaped wafer W that has undergone roughing processing at the roughing process location 101 in a grinding process location within the semiconductor manufacturing process. Although the case where it conveys on the chuck | zipper table 51 of the process location 102 is shown as an example, this invention is not limited to this.

そして、受け渡し装置10は、大きくは搬送ユニット11と受け取りユニット12を有している。   The delivery device 10 mainly includes a transport unit 11 and a receiving unit 12.

前記搬送ユニット11は、スピンドル軸13と、そのスピンドル軸13に一端側を取り付け、他端側の下面に枢軸14を介してチャックプレート15を取り付けてなるウエハ搬送保持部材16を具備している。   The transfer unit 11 includes a spindle shaft 13 and a wafer transfer holding member 16 having one end attached to the spindle shaft 13 and a chuck plate 15 attached to a lower surface on the other end side via a pivot 14.

前記ウエハ搬送保持部材16は、スピンドル軸13を支点にして水平回転可能であり、またチャックプレート15及びスピンドル軸13と共に垂直方向に上下移動可能になっている。そして、ウエハ搬送保持部材16は、該スピンドル軸13を支点にして、水平回転することにより、前記チャックプレート15を、前記荒削り工程箇所101の位置から前記仕上げ研削工程箇所102に、反対に前記仕上げ研削工程箇所102から前記荒削り工程箇所101の位置に、それぞれ略90度往復移動させることが可能になっている。なお、チャックプレート15が前記仕上げ研削工程箇所102の位置に配置された状態では、図2に示すように、そのチャックプレート15は受け取りユニット12のチャックテーブル51の略真上に配置されるようになっている。   The wafer carrying / holding member 16 can be horizontally rotated about the spindle shaft 13 as a fulcrum, and can be moved vertically in the vertical direction together with the chuck plate 15 and the spindle shaft 13. Then, the wafer transfer holding member 16 rotates horizontally with the spindle shaft 13 as a fulcrum, thereby moving the chuck plate 15 from the position of the roughing process location 101 to the finish grinding process location 102, in the opposite direction. It is possible to reciprocate approximately 90 degrees from the grinding process location 102 to the roughing process location 101, respectively. In the state where the chuck plate 15 is arranged at the position of the finish grinding step 102, the chuck plate 15 is arranged almost directly above the chuck table 51 of the receiving unit 12, as shown in FIG. It has become.

さらに、前記ウエハ搬送保持部材16は、前記荒削り工程箇所101の位置及び前記仕上げ研削工程箇所102では、それぞれ垂直方向に上下移動可能である。そして、その仕上げ研削工程箇所102の位置で該ウエハ搬送保持部材16を垂直方向に上下移動動することにより、前記チャックプレート13と前記チャックテーブル51の間の距離(上下方向の距離)が、図2に示すように大きく離れた状態と、図3に示すように極めて近づいた状態の、2つの状態に切り換えることができるようになっている。   Further, the wafer transfer holding member 16 can be moved vertically in the vertical direction at the roughing process location 101 and the finish grinding process location 102, respectively. Then, by moving the wafer transfer holding member 16 up and down in the vertical direction at the position of the finish grinding step 102, the distance between the chuck plate 13 and the chuck table 51 (the vertical distance) is as shown in FIG. As shown in FIG. 2, the state can be switched between two states, that is, a state of being far apart and a state of being very close as shown in FIG.

また、前記チャックプレート15は、図1乃至図5に示すように、円盤状をしたブロック体として形成されており、下面側には平坦な吸着面17が設けられている。そのチャックプレート15は、図5に示すように内部が空洞18(以下、「空洞部18」という)に形成されており、前記吸着面17には図4に示すように、下面側に開口されている複数個(本実施例では9本)の環状をした溝19が同心状に設けられている。これら各溝19の幅は約2mm程度で、また図5に示すように貫通孔20を通して空洞部18内に接続されている。なお、吸着面17は、好ましくは水切れの良い撥水性を有した素材、例えば、エンジニアリング・プラスチックやセラミックス、ピーク材等で形成、またはエンジニアリング・プラスチックをラップ加工して表面に貼り付けるように形成するとよい。   Further, as shown in FIGS. 1 to 5, the chuck plate 15 is formed as a disk-like block body, and a flat suction surface 17 is provided on the lower surface side. As shown in FIG. 5, the inside of the chuck plate 15 is formed in a cavity 18 (hereinafter referred to as “cavity 18”), and the suction surface 17 is opened on the lower surface side as shown in FIG. A plurality of (in this embodiment, nine) annular grooves 19 are provided concentrically. Each of the grooves 19 has a width of about 2 mm and is connected to the cavity 18 through the through hole 20 as shown in FIG. The adsorbing surface 17 is preferably formed of a water-repellent material with good water repellency, such as engineering plastic, ceramics, peak material or the like, or formed by lapping engineering plastic and attaching it to the surface. Good.

さらに、図1及び図2に示すように、前記搬送ユニット11には、前記吸着面17にウエハWを真空吸着させる負圧を発生する負圧発生部21と、前記吸着面17からウエハWに向かって剥離水を吐出する剥離水供給部22が、それぞれ配管23を介して前記空洞部18に接続されている。前記配管23には、前記搬送ユニット11と前記負圧発生部21との間に制御部26で開閉制御される電磁開閉弁24が接続され、前記搬送ユニット11と剥離水供給部22との間に制御部26で開閉制御される電磁開閉弁25が接続されている。これら電磁開閉弁24、25は、それぞれスプリング24a、25aにより常閉状態に付勢されている。そして、電磁石24b、25bは、制御部26の制御により通電されて励磁されると、スプリング24a、25aの付勢に抗して閉状態から開状態に切り換えられる。また、反対に通電が断たれると各々非励磁になり、スプリング24a、25aの付勢により閉状態に切り換えられるようになっている。なお、前記制御部26は、決められた手順で装置全体を制御するプログラムを有する制御手段で、例えばコンピュータである。その制御部26は、本実施例では該プログラムに基づいて前記電磁開閉弁24、25及び後述する電磁開閉弁57等の切り換え操作をする。   Further, as shown in FIGS. 1 and 2, the transfer unit 11 includes a negative pressure generating unit 21 that generates a negative pressure for vacuum-sucking the wafer W onto the suction surface 17, and the suction surface 17 to the wafer W. A stripping water supply unit 22 that discharges stripping water is connected to the cavity 18 through a pipe 23. An electromagnetic on-off valve 24 that is controlled to open and close by a control unit 26 is connected between the transfer unit 11 and the negative pressure generating unit 21, and the pipe 23 is connected between the transfer unit 11 and the peeling water supply unit 22. An electromagnetic on-off valve 25 that is controlled to be opened and closed by the control unit 26 is connected to the motor. These electromagnetic on-off valves 24 and 25 are biased to a normally closed state by springs 24a and 25a, respectively. When the electromagnets 24b and 25b are energized and excited under the control of the control unit 26, the electromagnets 24b and 25b are switched from the closed state to the open state against the bias of the springs 24a and 25a. On the contrary, when energization is cut off, each is de-energized and switched to the closed state by the urging of the springs 24a and 25a. The control unit 26 is a control unit having a program for controlling the entire apparatus according to a predetermined procedure, and is a computer, for example. In this embodiment, the control unit 26 performs switching operation of the electromagnetic on / off valves 24 and 25 and an electromagnetic on / off valve 57 to be described later based on the program.

前記負圧発生部21は、真空ポンプ等の負圧源を有し、制御部26の制御で電磁開閉弁24が閉状態から開状態に切り換えられると、配管23を通してチャックプレート15の空洞部18内の空気を吸引し、該空洞部18内を負圧にするとともに、貫通孔20を通して溝19内のエアを抜き、前記吸着面17を負圧にして、その吸着面17にウエハWを真空吸着することができるようになっている。   The negative pressure generator 21 has a negative pressure source such as a vacuum pump. When the electromagnetic on / off valve 24 is switched from the closed state to the open state under the control of the control unit 26, the cavity 18 of the chuck plate 15 is passed through the pipe 23. The inside air is sucked to make the inside of the hollow portion 18 have a negative pressure, and the air in the groove 19 is drawn through the through hole 20 to make the suction surface 17 negative, and the wafer W is vacuumed on the suction surface 17. It can be adsorbed.

前記剥離水供給部22は、剥離水を収容する剥離水貯蔵タンク及び剥離水貯蔵タンク内の剥離水を送り出すポンプ等を含んでおり、前記電磁開閉弁25を介して前記チャックプレート15の空洞部18内に剥離水を強制的に供給できるようになっている。その剥離水は、本実施例では純水を使用している。また、前記電磁開閉弁25は、前記剥離水供給部22側から前記空洞部18内に供給する流量を微調整可能になっている。   The stripping water supply unit 22 includes a stripping water storage tank that stores stripping water, a pump that feeds the stripping water in the stripping water storage tank, and the like, and a cavity portion of the chuck plate 15 through the electromagnetic on-off valve 25. The peeling water can be forcibly supplied into the interior 18. As the peeling water, pure water is used in this embodiment. Further, the electromagnetic on-off valve 25 can finely adjust the flow rate supplied into the hollow portion 18 from the peeling water supply portion 22 side.

その剥離水供給部22は、制御部26の制御により電磁開閉弁25が閉状態から開状態に切り換えられると、配管23を通してチャックプレート15の空洞部18内に剥離水を供給することができる。また、空洞部18内に供給された剥離水は、更に空洞部18内から貫通孔20を通って溝19内に吐出し、更に吸着面17とウエハWとの間に吐出されて、吸着面17とウエハWとの間に流れ込み、これが吸着面17とウエハWとの間を緩やかに流れてウエハWの外周から排出されるようになっている。そして、その剥離水が、吸着面17とウエハWとの間を流れることにより、ウエハWを吸着面17から浮き上がらせ、その吸着面とウエハとの間に発生する表面張力を断ち切り、ウエハWが吸着面17からスムーズに剥離できるようにしている。したがって、ここでの剥離水の供給は、吸着面17とウエハWとの間に発生している表面張力を断ち切ることができる水量であれば十分である。   The separation water supply unit 22 can supply the separation water into the cavity 18 of the chuck plate 15 through the pipe 23 when the electromagnetic on-off valve 25 is switched from the closed state to the open state under the control of the control unit 26. Further, the peeling water supplied into the cavity 18 is further discharged from the cavity 18 through the through hole 20 and into the groove 19, and is further discharged between the suction surface 17 and the wafer W. 17 flows between the wafer 17 and the wafer W, and gently flows between the suction surface 17 and the wafer W to be discharged from the outer periphery of the wafer W. Then, when the peeling water flows between the suction surface 17 and the wafer W, the wafer W is lifted from the suction surface 17 and the surface tension generated between the suction surface and the wafer is cut off. It can be smoothly peeled off from the suction surface 17. Therefore, the supply of the stripping water here is sufficient as long as the amount of water can cut off the surface tension generated between the suction surface 17 and the wafer W.

ウエハ受取部材としての前記チャックテーブル51は、図1及び図6に示すように、円盤状をしたブロックとして形成されており、上面には平坦な吸着面52が設けられている。そのチャックプレート51は、図7に示すように内部が空洞53(以下、「空洞部53」という)に形成されており、前記吸着面52には上面側(ウエハWが送られて来る側)に開口している複数個の孔54が、その吸着部52の略中心から外周側に向かって放射状に設けられている。これら各孔54は、空洞部53内に接続されている。また、ここでの吸着面52も、好ましくは水切れの良い撥水性を有した素材、例えば、エンジニアリング・プラスチックやセラミックス、ピーク材等で形成、またはエンジニアリング・プラスチックをラップ加工して表面に貼り付けて形成するとよい。   As shown in FIGS. 1 and 6, the chuck table 51 as a wafer receiving member is formed as a disk-shaped block, and a flat suction surface 52 is provided on the upper surface. 7, the inside of the chuck plate 51 is formed in a cavity 53 (hereinafter referred to as “cavity portion 53”), and the upper surface side (side on which the wafer W is sent) is formed on the suction surface 52. A plurality of holes 54 are provided radially from the approximate center of the suction portion 52 toward the outer peripheral side. Each of these holes 54 is connected in the cavity 53. Also, the adsorption surface 52 here is preferably formed of a water-repellent material having good water drainage, for example, engineering plastic, ceramics, peak material, etc., or engineering plastic is lapped and attached to the surface. It is good to form.

前記チャックテーブル51には、前記吸着面52にウエハWを真空吸着させる負圧を発生する負圧発生部55が、配管56を介して空洞部53に接続されている。配管56には、前記チャックテーブル51(受け取りユニット12)と前記負圧発生部55との間に、前記制御部26で開閉制御される電磁開閉弁57が接続されている。この電磁開閉弁57は、スプリング57aにより常閉状態に付勢されており、制御部26の制御で電磁石57bが通電されて、該電磁石57bが励磁されると、スプリング57aの付勢に抗して閉状態から開状態に切り換えられ、電磁石57bへの通電が断たれて非励磁になると、スプリング57aの付勢により開状態から閉状態に切り換えられるようになっている。   A negative pressure generating portion 55 that generates a negative pressure for vacuum-sucking the wafer W to the suction surface 52 is connected to the cavity portion 53 via the pipe 56 in the chuck table 51. An electromagnetic on-off valve 57 that is controlled to open and close by the control unit 26 is connected to the pipe 56 between the chuck table 51 (receiving unit 12) and the negative pressure generating unit 55. The electromagnetic open / close valve 57 is biased to a normally closed state by a spring 57a. When the electromagnet 57b is energized by the control of the control unit 26 and the electromagnet 57b is excited, the electromagnetic on / off valve 57 resists the bias of the spring 57a. When the electromagnet 57b is deenergized by switching from the closed state to the open state, the spring 57a is biased to switch from the open state to the closed state.

前記負圧発生部51は、真空ポンプ等の負圧源を有している。そして、制御部26の制御により、電磁開閉弁57が開状態に切り換えられると、配管56を通してチャックテーブル51の空洞部53内の空気を吸引し、該空洞部53内を負圧にするとともに、貫通孔54を通して前記吸着面52を負圧にして、その吸着面52にウエハWを真空吸着することができるようになっている。   The negative pressure generator 51 has a negative pressure source such as a vacuum pump. Then, when the electromagnetic on-off valve 57 is switched to the open state by the control of the control unit 26, the air in the cavity 53 of the chuck table 51 is sucked through the pipe 56, and the inside of the cavity 53 is made negative pressure. The suction surface 52 is set to a negative pressure through the through hole 54 so that the wafer W can be vacuum-sucked to the suction surface 52.

次に、以上のように構成された受け渡し装置10の動作を、図8に示すフロー図を加えて、そのフローのステップ(a)〜ステップ(d)の順に説明をする。まず、搬送ユニット11は、図1に示す荒削り工程箇所101において、図示しないチャックテーブル上のウエハWを、該ウエハWの中心をチャックプレート15における吸着面17の略中心に合致させて真空吸着保持して持ち上げる。この場合、制御部26の制御により、負圧発生部21を操作する電磁開閉弁24は開で、剥離水供給部22を操作する電磁開閉弁25は閉に動作されている。したがって、チャックプレート15の空洞部18内は負圧の状態で、吸着面17でウエハWを真空吸着保持し、剥離水供給部22からの剥離水は遮断されている。   Next, the operation of the delivery apparatus 10 configured as described above will be described in the order of steps (a) to (d) of the flow with reference to the flowchart shown in FIG. First, the transport unit 11 holds the wafer W on the chuck table (not shown) at the roughing process location 101 shown in FIG. 1 by vacuum suction holding with the center of the wafer W aligned with the approximate center of the suction surface 17 of the chuck plate 15. Then lift. In this case, under the control of the control unit 26, the electromagnetic on-off valve 24 for operating the negative pressure generating unit 21 is opened, and the electromagnetic on-off valve 25 for operating the stripping water supply unit 22 is closed. Therefore, the inside of the cavity 18 of the chuck plate 15 is in a negative pressure state, the wafer W is vacuum-sucked and held by the suction surface 17, and the release water from the release water supply unit 22 is blocked.

次いで、ウエハ搬送保持部材16は、スピンドル軸13を支点として荒削り工程箇所101の位置から略90度水平回転され、ウエハWが仕上げ研削工程箇所102のチャックテーブル51上に配置された状態にされる。図8のステップ(a)及び図2は、その状態を示している。なお、この状態では、仕上げ工程箇所102における受け取りユニット12の電磁開閉弁57は、制御部26の制御により閉に動作され、空洞部53と負圧発生部55との間は遮断されていて、チャックテーブル51の空洞部53内は正圧の状態になっている。   Next, the wafer transfer holding member 16 is horizontally rotated approximately 90 degrees from the position of the roughing process place 101 with the spindle shaft 13 as a fulcrum, and the wafer W is placed on the chuck table 51 in the finish grinding process place 102. . Step (a) in FIG. 8 and FIG. 2 show this state. In this state, the electromagnetic on-off valve 57 of the receiving unit 12 at the finishing process location 102 is closed by the control of the control unit 26, and the cavity 53 and the negative pressure generating unit 55 are shut off. The inside of the cavity 53 of the chuck table 51 is in a positive pressure state.

次いで、図8のステップ(b)では、制御部26の制御により、ウエハ搬送保持部材16がチャックプレート15と共に、ウエハWがチャックテーブル51の吸着面52と略接触する位置まで降下する。また、これと同時に、制御部26の制御により、受け取りユニット12の電磁開閉弁57が開に動作される。これにより、チャックテーブル51の空洞部53と負圧発生部55とが連通し、チャックテーブル51の空洞部53内が負圧になり、吸着面17でウエハWを真空吸着保持可能になる。しかし、この状態では、未だチャックプレート15側の電磁開閉弁24は開に動作されているので、チャックプレート15の空洞部18内は負圧の状態で、ウエハWは吸着面17で真空吸着保持された状態にある。   Next, in step (b) of FIG. 8, under the control of the control unit 26, the wafer conveyance holding member 16 is lowered together with the chuck plate 15 to a position where the wafer W substantially contacts the suction surface 52 of the chuck table 51. At the same time, the electromagnetic opening / closing valve 57 of the receiving unit 12 is opened by the control of the control unit 26. As a result, the cavity 53 of the chuck table 51 and the negative pressure generating part 55 communicate with each other, the inside of the cavity 53 of the chuck table 51 becomes negative pressure, and the wafer W can be held by vacuum suction on the suction surface 17. However, in this state, since the electromagnetic on-off valve 24 on the chuck plate 15 side is still opened, the inside of the cavity 18 of the chuck plate 15 is in a negative pressure state, and the wafer W is held by vacuum suction on the suction surface 17. It is in the state that was done.

次いで、図8のステップ(c)では、制御部26の制御により、チャックプレート15側の電磁開閉弁24が閉に切り換えられる。これにより負圧発生部24とチャックプレート15との連通が断たれ、チャックプレート15の空洞部18内が正圧となる。そして、チャックプレート15の吸着面17における負圧はなくなる。しかし、ウエハWは、吸着面17との間に発生している表面張力で、吸着面17に貼り付いたままの状態となり、チャックテーブル51の吸着面52側に受け渡しできない場合も生じる。そこで、本実施例の構造では、制御部26の制御により、電磁開閉弁24が閉に切り換えられると略同時に、電磁開閉弁25が開状態に切り換えられ、配管23を通してチャックプレート15の空洞部18内に剥離水が供給される。空洞部18内に供給された剥離水は、空洞部18内から貫通孔20を通って溝19内に吐出し、更に吸着面17とウエハWとの間に吐出されて、吸着面17とウエハWとの間に剥離水が流れ込む。そして、その剥離水が、ウエハWの中心側から外周側に向かって吸着面17とウエハWとの間を緩やかに放射状に万遍なく流れてウエハWの外周から排出される。また、剥離水が吸着面17とウエハWとの間に流れることにより、その吸着面17とウエハWとの間に発生する表面張力が断ち切られ、ウエハWが吸着面17からスムーズに剥離される。また、剥離されたウエハWは、吸着面52側の負圧に吸い寄せられてチャックテーブル51側にスムーズに渡され、その後は、吸着面52上に真空吸着される。こうして、ウエハWの受け渡しが終わったら、制御部26の制御により、電磁開閉弁25が開状態から閉状態に切り換えられ、吸着面17から吐出する剥離水が断たれる。また、本実施例では、吸着面17は、水切れの良い撥水性を有した素材で形成しているので、剥離水が断たれたとき、吸着面17に残っている剥離水はその吸着面17の上から瞬時に流れて無くなる。   Next, in step (c) of FIG. 8, the electromagnetic on-off valve 24 on the chuck plate 15 side is switched to close under the control of the control unit 26. As a result, the communication between the negative pressure generator 24 and the chuck plate 15 is cut off, and the inside of the cavity 18 of the chuck plate 15 becomes positive pressure. And the negative pressure on the suction surface 17 of the chuck plate 15 is eliminated. However, the wafer W may remain attached to the suction surface 17 due to surface tension generated between the wafer W and the wafer W, and the wafer W may not be delivered to the chuck surface 51 side. Therefore, in the structure of the present embodiment, the electromagnetic switching valve 25 is switched to the open state almost simultaneously with the switching of the electromagnetic switching valve 24 under the control of the control unit 26, and the cavity 18 of the chuck plate 15 is passed through the pipe 23. Stripping water is supplied inside. The peeling water supplied into the cavity 18 is discharged from the cavity 18 through the through-hole 20 into the groove 19 and further between the suction surface 17 and the wafer W, and the suction surface 17 and the wafer. Separation water flows between W. Then, the peeling water gently and uniformly flows between the suction surface 17 and the wafer W from the center side to the outer peripheral side of the wafer W and is discharged from the outer periphery of the wafer W. Further, when the peeling water flows between the suction surface 17 and the wafer W, the surface tension generated between the suction surface 17 and the wafer W is cut off, and the wafer W is peeled off from the suction surface 17 smoothly. . Further, the peeled wafer W is attracted to the negative pressure on the suction surface 52 side and smoothly passed to the chuck table 51 side, and thereafter is vacuum-sucked on the suction surface 52. Thus, when the delivery of the wafer W is finished, the electromagnetic opening / closing valve 25 is switched from the open state to the closed state under the control of the control unit 26, and the peeling water discharged from the suction surface 17 is cut off. Further, in this embodiment, the adsorption surface 17 is formed of a material having water repellency with good drainage, so that when the separation water is cut off, the separation water remaining on the adsorption surface 17 is the adsorption surface 17. It flows away from the top instantly and disappears.

次いで、ステップ(d)では、ウエハ搬送保持部材16がチャックプレート15と共に上昇する。また、上昇後、そのウエハ搬送保持部材16は、スピンドル軸13を支点として、荒削り工程箇所101の位置に向かって略90度水平回転され、荒削り工程箇所101まで戻される。一方、チャックテーブル51上にセットされたウエハWは、そのチャックテーブル51上で仕上げ研削加工が行われた後、図示しない手段により搬送処理される。この一連の動作を行うことにより、荒削り工程箇所101で、ウエハWを真空吸着保持して搬送し、仕上げ研削工程箇所102でチャックテーブル51側へ確実に受け渡すことができる。   Next, in step (d), the wafer conveyance holding member 16 is lifted together with the chuck plate 15. After the ascent, the wafer transfer holding member 16 is horizontally rotated approximately 90 degrees toward the roughing process location 101 with the spindle shaft 13 as a fulcrum, and is returned to the roughing process location 101. On the other hand, the wafer W set on the chuck table 51 is subjected to finish grinding on the chuck table 51 and then transferred by means not shown. By performing this series of operations, the wafer W can be vacuum-sucked and held at the roughing process location 101 and can be reliably delivered to the chuck table 51 side at the finish grinding process location 102.

したがって、このように構成されたウエハの受け渡し装置10では、ウエハWが真空吸着される平坦な吸着面17を有したチャックプレート15を設けたウエハ搬送保持部材16と、該ウエハ搬送保持部材16のチャックプレート15に真空吸着保持されて搬送されて来たウエハWが受け取られるウエハ受取部材(受け取りユニット12のチャックテーブル51)と、ウエハ搬送保持部材16側に設けられた吸着面17にウエハWが吸着される負圧を発生させる負圧発生部21と、ウエハ搬送保持部材16側に設けられた吸着面17からウエハWに向かって剥離水を吐出させる剥離水供給部22と、負圧発生部21による負圧の発生・停止及び剥離水供給部22による剥離水の吐出・停止をそれぞれ制御する制御手段(制御部)と、を備えているので、ウエハ搬送保持部材16側の吸着面17に発生する負圧で、ウエハWの一面全体をその吸着面17に吸着させて搬送することができる。このため、ウエハWの一面全体を保持して搬送するので、ウエハWの割れによる破損を防止できる。また、搬送を終えた位置で吸着面17側の負圧を断つとともに、その吸着面17からウエハWの一面に向かって剥離水を吐出させて、その剥離水を吸着面17とウエハWとの間に流して、その吐出させた剥離水の流れでウエハWを吸着面17から浮き上がらせると同時に、吸着面17とウエハとの間に発生する表面張力を断ち切ることができる。これにより、ウエハWがウエハ搬送保持部材16側の吸着面17からスムーズに剥がれて、ウエハ受取部材(受け取りユニット12のチャックテーブル51)側へ確実に渡すことができる。   Therefore, in the wafer delivery apparatus 10 configured as described above, the wafer transfer holding member 16 provided with the chuck plate 15 having the flat suction surface 17 on which the wafer W is vacuum-sucked, and the wafer transfer holding member 16 The wafer W is held on the wafer receiving member (chuck table 51 of the receiving unit 12) that receives the wafer W that has been transferred by vacuum chucking and holding on the chuck plate 15, and the suction surface 17 provided on the wafer transfer holding member 16 side. A negative pressure generating unit 21 that generates a negative pressure to be adsorbed, a stripping water supply unit 22 that discharges stripping water from the suction surface 17 provided on the wafer transfer holding member 16 side toward the wafer W, and a negative pressure generating unit Control means (control unit) for controlling generation / stop of negative pressure by 21 and discharge / stop of stripping water by stripping water supply unit 22 respectively. Thus, the entire surface of the wafer W can be attracted to the suction surface 17 and transported by the negative pressure generated on the suction surface 17 on the wafer transport holding member 16 side. For this reason, since the whole surface of the wafer W is held and transported, it is possible to prevent damage due to cracking of the wafer W. In addition, the negative pressure on the suction surface 17 side is cut off at the position where the transfer is completed, and peeling water is discharged from the suction surface 17 toward one surface of the wafer W, and the peeling water is discharged between the suction surface 17 and the wafer W. The wafer W can be lifted from the suction surface 17 by the flow of the discharged peeling water, and the surface tension generated between the suction surface 17 and the wafer can be cut off. As a result, the wafer W can be smoothly peeled off from the suction surface 17 on the wafer transfer holding member 16 side and can be reliably transferred to the wafer receiving member (chuck table 51 of the receiving unit 12) side.

また、ウエハ搬送保持部材16側の吸着面17には、前記ウエハWを吸引及びウエハWに剥離水を吐出する共通の溝19を設けているので、その溝19を利用してウエハWの吸引と剥離水の吐出を交互に行わせることができる。このようにして、ウエハWを吸引する溝と剥離水を吐出するための溝を兼用することにより、溝19の数が減り、構造の簡略化とコストの低減が可能になる。   The suction surface 17 on the wafer transfer holding member 16 side is provided with a common groove 19 for sucking the wafer W and discharging peeling water to the wafer W, so that the wafer 19 is sucked using the groove 19. And exfoliation water can be discharged alternately. Thus, by combining the groove for sucking the wafer W and the groove for discharging the peeling water, the number of grooves 19 is reduced, and the structure can be simplified and the cost can be reduced.

さらに、ウエハ搬送保持部材16側の吸着面17には、環状の溝19を、同心状にして複数個設けているので、その環状の溝19の中心に略一致させてウエハWが配置される吸着面17上に、負圧を円周状にして平均に掛けることができる。このため、ウエハWを傾かすことなく略水平状態のまま、ウエハWの一面全体を吸着面17に真空吸引保持させることができる。一方、ウエハWに剥離水を吐出させる場合も、吸着面17の中心側から水が円周状に吐出されて、それが図3に矢印で示すように、ウエハWの中心側から外周側に向かって万遍なく均等に流れる。このため、ウエハWと吸着面17との間における、そのウエハWに対する表面張力を万遍なく断ち切ることができる。これにより、ウエハWに対して偏りを起こすことなく、ウエハWをウエハ受取部材であるチャックテーブル51上にスムーズに渡すことができる。   Further, since a plurality of annular grooves 19 are provided concentrically on the suction surface 17 on the wafer transfer holding member 16 side, the wafer W is disposed substantially in alignment with the center of the annular groove 19. On the suction surface 17, a negative pressure can be circumferentially applied and averaged. For this reason, the entire surface of the wafer W can be vacuum-sucked and held on the suction surface 17 while the wafer W is not tilted and remains substantially horizontal. On the other hand, when the peeling water is discharged onto the wafer W, water is discharged from the center side of the suction surface 17 in a circumferential shape, and as shown by arrows in FIG. It flows evenly and uniformly. For this reason, the surface tension with respect to the wafer W between the wafer W and the suction surface 17 can be cut evenly. Thereby, the wafer W can be smoothly transferred onto the chuck table 51 which is a wafer receiving member without causing a bias with respect to the wafer W.

なお、本発明は、本発明の精神を逸脱しない限り種々の改変を為すことができ、そして、本発明が該改変されたものに及ぶことは当然である。例えば、上記実施例では、ウエハ搬送保持部材16側の吸着面17に、環状をした溝19を設けた構造を開示したが、溝とせずに、例えば図9及び図10に示すように複数個の貫通孔20a、20a・・・を環状に配置し、それら環状をした貫通孔列を同心状に配置してなる構造にしてもよい。すなわち、図9はウエハ搬送保持部材16における吸着面の一変形例を示す平面図で、図10は図9のC−C線概略断面図であり、また図4及び図5に示すウエハ搬送保持部材16と同一の符号を付して示している部材は、図4及び図5に示すウエハ搬送保持部材16と同一の部材である。   It should be noted that the present invention can be variously modified without departing from the spirit of the present invention, and the present invention naturally extends to the modified ones. For example, in the above-described embodiment, a structure in which the annular groove 19 is provided on the suction surface 17 on the wafer transfer holding member 16 side is disclosed, but a plurality of grooves as shown in FIGS. The through holes 20a, 20a,... May be annularly arranged, and the annular through hole rows may be concentrically arranged. That is, FIG. 9 is a plan view showing a modification of the suction surface of the wafer conveyance holding member 16, and FIG. 10 is a schematic cross-sectional view taken along the line CC of FIG. 9, and the wafer conveyance and holding shown in FIGS. The members denoted by the same reference numerals as those of the member 16 are the same members as the wafer transfer holding member 16 shown in FIGS.

本発明の受け渡し装置10は、半導体製造の研削工程箇所において、荒削り工程箇所101から仕上げ研削工程箇所102のチャックテーブル51上にウエハWを搬送する場合の一例を開示したが、これ以外の受け渡し装置としても応用が可能である。   The delivery apparatus 10 of the present invention has disclosed an example in the case where the wafer W is transferred from the roughing process place 101 to the chuck table 51 at the finish grinding process place 102 in the grinding process place of semiconductor manufacturing. It can also be applied.

13 スピンドル軸
14 枢軸
15 チャックプレート
16 ウエハ搬送保持部材
17 吸着面
18 空洞(空洞部)
19 溝
20 貫通孔
20a 貫通孔
21 負圧発生部
22 剥離水供給部
23 配管
24 電磁開閉弁
24a スプリング
24b 電磁石
25 電磁開閉弁
25a スプリング
25b 電磁石
26 制御部(制御手段)
51 チャックテーブル(ウエハ受取部材)
52 吸着面
53 空洞部
54 孔
55 負圧発生部
56 配管
57 電磁開閉弁
57a スプリング
57b 電磁石
101 荒削り工程箇所
102 仕上げ研削工程箇所
W ウエハ
13 Spindle shaft 14 Axis 15 Chuck plate 16 Wafer transfer holding member 17 Suction surface 18 Cavity (cavity)
19 Groove 20 Through-hole 20a Through-hole 21 Negative pressure generating part 22 Stripping water supply part 23 Pipe 24 Electromagnetic on-off valve 24a Spring 24b Electromagnet 25 Electromagnetic on-off valve 25a Spring 25b Electromagnet 26 Control part (control means)
51 Chuck table (wafer receiving member)
52 Adsorption surface 53 Cavity part 54 Hole 55 Negative pressure generation part 56 Piping 57 Electromagnetic switching valve 57a Spring 57b Electromagnet 101 Roughing process part 102 Finish grinding process part W Wafer

Claims (7)

ウエハを搬送する際に使用するウエハの受け渡し装置であって、
前記ウエハが吸着保持される平坦な吸着面を有したウエハ搬送保持部材と、
前記ウエハ搬送保持部材により搬送されて来た前記ウエハが受け取られるウエハ受取部材と、
前記ウエハ搬送保持部材の前記吸着面に前記ウエハが吸着保持される負圧を発生させる負圧発生部と、
前記吸着面と前記ウエハとの間に剥離水を供給して該ウエハの外周側から排出される水の流れを生成する剥離水供給部と、
前記負圧発生部による前記負圧の発生・停止と前記剥離水供給部による前記剥離水の吐出・停止を制御する制御手段と、
を備えることを特徴とするウエハの受け渡し装置。
A wafer transfer device used for transferring a wafer,
A wafer transfer holding member having a flat suction surface on which the wafer is sucked and held;
A wafer receiving member for receiving the wafer transferred by the wafer transfer holding member;
A negative pressure generating section for generating a negative pressure at which the wafer is sucked and held on the suction surface of the wafer transfer holding member;
A stripping water supply unit that supplies stripping water between the adsorption surface and the wafer to generate a flow of water discharged from the outer peripheral side of the wafer;
Control means for controlling generation / stop of the negative pressure by the negative pressure generation unit and discharge / stop of the stripping water by the stripping water supply unit;
A wafer transfer apparatus comprising:
前記吸着面には、前記ウエハを吸引する孔または環状の溝と、該ウエハに剥離水を吐出する孔または溝を有する、ことを特徴とする請求項1に記載のウエハの受け渡し装置。   The wafer transfer device according to claim 1, wherein the suction surface includes a hole or an annular groove for sucking the wafer and a hole or a groove for discharging peeling water to the wafer. 前記ウエハを吸引する孔または環状の溝と、該ウエハに剥離水を吐出する孔または環状の溝は、共通の孔または溝である、ことを特徴とする請求項1または2に記載のウエハの受け渡し装置。   3. The wafer according to claim 1, wherein the hole or annular groove for sucking the wafer and the hole or annular groove for discharging the peeling water to the wafer are a common hole or groove. Delivery device. 前記環状の溝は、略同心状にして複数個設けられている、ことを特徴とする請求項1、2または3に記載のウエハの受け渡し装置。   4. The wafer transfer apparatus according to claim 1, wherein a plurality of the annular grooves are provided substantially concentrically. ウエハ搬送保持部材の吸着面に発生させる負圧でウエハを吸着面に吸着保持して所定位置に搬送し、ウエハ受取部材上に受け渡すウエハの受け渡し方法であって、
前記所定の位置で前記負圧による吸着保持力を取り除き、その後、前記吸着面から前記ウエハに向けて剥離水を吐出させる、ことを特徴とするウエハの受け渡し方法。
A wafer transfer method for transferring a wafer onto a wafer receiving member by sucking and holding the wafer on the suction surface with a negative pressure generated on the suction surface of the wafer transfer holding member,
The wafer delivery method, wherein the suction holding force due to the negative pressure is removed at the predetermined position, and then the peeling water is discharged from the suction surface toward the wafer.
前記ウエハ搬送保持部材の吸着面に負圧を発生させて前記ウエハを前記所定の位置の近傍まで搬送するステップと、前記ウエハ受取部材側の吸着面に負圧を発生させるステップと、前記ウエハ搬送保持部材側の吸着面に発生している負圧を断つステップと、前記ウエハ搬送保持部材側の前記吸着面から前記ウエハに向けて剥離水を吐出させ、該剥離水を前記吸着面と前記ウエハとの間に流して該ウエハの外周から排出させるステップ、とを経て処理する、ことを特徴とする請求項5に記載のウエハの受け渡し方法。   Generating negative pressure on the suction surface of the wafer transport holding member to transport the wafer to the vicinity of the predetermined position; generating negative pressure on the suction surface on the wafer receiving member side; and wafer transport Cutting off the negative pressure generated on the holding surface on the holding member side, discharging peeling water from the suction surface on the wafer transport holding member side toward the wafer, and removing the peeling water from the suction surface and the wafer 6. The wafer delivery method according to claim 5, wherein the wafer is passed through and discharged from the outer periphery of the wafer. 前記剥離水を、前記ウエハと略同心状に吐出する、ことを特徴とする請求項5または6に記載のウエハの受け渡し方法。   7. The wafer transfer method according to claim 5, wherein the peeling water is discharged substantially concentrically with the wafer.
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JPH08164370A (en) * 1994-12-13 1996-06-25 Ckd Corp Device and method for washing plate material having many fine holes and device and method for washing chucking plate of vacuum chuck
JPH11274280A (en) * 1998-03-20 1999-10-08 Speedfam Co Ltd Vacuum chuck device for work
JP2000237955A (en) * 1999-02-18 2000-09-05 Speedfam-Ipec Co Ltd Mechanism for supplying liquid to wafer sucking part of end surface polishing device and for vacuum sucking the wafer
JP2004209340A (en) * 2002-12-27 2004-07-29 Tokyo Ohka Kogyo Co Ltd Tray for substrate
JP2007201363A (en) * 2006-01-30 2007-08-09 Kyocera Corp Member for vacuum suction of semiconductor wafer
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