JP2016149883A - Power conversion device and power electronics device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an enlarged element size by the parallel connection of semiconductor modules in a power conversion device.SOLUTION: The power conversion device includes: a plurality of smoothing capacitors each having an anode electrode and a cathode electrode disposed on the head side of the body; a bus bar having an anode member and a cathode member unified across an insulating member; and a plurality of semiconductor modules, fixed to a heat sink having a fin and a base, including an anode-side switching semiconductor device and a cathode-side switching semiconductor device in series connection. Each anode electrode of the plurality of smoothing capacitors is connected to the anode member of the bus bar, whereas each cathode electrode of the plurality of smoothing capacitor is connected to the cathode member of the bus bar. The plurality of smoothing capacitors are disposed on one side of the bus bar, and the plurality of semiconductor modules are disposed in the periphery of the bus bar.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a power conversion device and a power electronics device, and more particularly to a power conversion device and a power electronics device including a semiconductor module and a smoothing capacitor.

  As for the power converter, the semiconductor module and the smoothing capacitor are connected in parallel (for example, refer patent documents 1-4). In a large-capacity power converter, a semiconductor module having a large rated current with a large element size is used, and a plurality of semiconductor modules are connected in parallel to divide a large current flowing in the circuit. When a plurality of semiconductor modules are connected in parallel, parasitic inductance and parasitic resistance are generated between the semiconductor module and the smoothing capacitor. In a power converter, it is important to suppress variations in parasitic inductance and parasitic resistance.

  There has been developed a power conversion device that suppresses variations in parasitic inductance and parasitic resistance between a semiconductor module and a smoothing capacitor by using one large semiconductor module for each phase of AC power (for example, Patent Document 1). reference). In consideration of connecting a plurality of semiconductor modules in parallel, a driving device has been developed in which smoothing capacitors are arranged at the upper and lower portions of each semiconductor module (see, for example, Patent Documents 2 and 3). . However, when it is necessary to increase the voltage and current of the device, there may be no semiconductor module that satisfies the rated voltage and rated current. Large semiconductor modules are generally more expensive than small semiconductor modules used for parallel connection.

JP 2012-005322 A JP 2010-213432 A JP 2011-030348 A JP 2011-010408 A

  In the arrangement configuration of the power conversion device in which one semiconductor module is provided for each phase, the element size is increased, and an expensive semiconductor module having a large rated current needs to be used. Even in consideration of connecting a plurality of semiconductor modules in parallel, it is necessary to arrange smoothing capacitors at the upper and lower portions of each semiconductor module, and thus the space to be arranged is required to be high. Furthermore, the cooling direction of the semiconductor module is limited by heat transfer from the semiconductor module to the smoothing capacitors located at the upper and lower parts and the presence of the smoothing capacitors located at the upper and lower parts.

  The present invention has been made to solve the above-described problems, and a main object of the power conversion device is to prevent an increase in element size by parallel connection of semiconductor modules. It is another object of the present invention to provide a configuration in which the height of the space in which the smoothing capacitor is disposed is reduced, the heat transfer from the semiconductor module to the smoothing capacitor is reduced, and the cooling direction of the semiconductor module is not limited.

  In order to solve the above problems, a power converter according to the present application includes a plurality of smoothing capacitors in which an anode electrode and a cathode electrode are provided on the head side of a main body, and an anode member and a cathode member sandwiching an insulating member. A plurality of semiconductor modules having an integrated bus bar, an anode-side switching semiconductor element and a cathode-side switching semiconductor element connected in series, and fixed to a heat sink having a fin portion and a base portion; The plurality of smoothing capacitors are connected to the bus bar anode member, the plurality of smoothing capacitor cathode electrodes are connected to the bus bar cathode member, and the plurality of smoothing capacitors are arranged on one side of the bus bar. The plurality of semiconductor modules are arranged around the bus bar.

  According to the above configuration, in the power conversion device, an increase in element size can be prevented by parallel connection of semiconductor modules. Further, since the plurality of smoothing capacitors are arranged on one side of the bus bar, the height of the arrangement space is reduced. Since heat transfer from the semiconductor module to the smoothing capacitor is reduced, it is possible to provide a configuration in which the cooling direction of the semiconductor module is not limited.

It is a figure which shows the electric circuit structure of a power electronics apparatus. 1 is a block diagram illustrating a configuration of a power conversion device according to a first embodiment. It is a perspective view showing the external appearance of a smoothing capacitor and a semiconductor module. It is a figure which shows the connection part of a smoothing capacitor and a bus bar. It is a figure which shows the connection part of a semiconductor module and a bus bar. It is a figure which shows the electric current path between a semiconductor module and a smoothing capacitor. FIG. 6 is a block diagram illustrating an internal configuration of an embedded board according to a second embodiment. It is a figure showing the flow of the wind in the built-in board by Embodiment 2. FIG. FIG. 10 is a diagram illustrating a wind flow in an embedded board according to a third embodiment. FIG. 10 is a block diagram illustrating a configuration of a power conversion device according to Embodiment 4. FIG. 10 is a block diagram illustrating an internal configuration of an embedded board according to a fifth embodiment. FIG. 10 is a block diagram illustrating a configuration of a power conversion device according to a sixth embodiment. FIG. 20 is a block diagram illustrating an internal configuration of an embedded board according to a seventh embodiment. FIG. 20 is a block diagram illustrating an internal configuration of an embedded board according to an eighth embodiment. FIG. 20 is a block diagram illustrating a configuration of a power conversion device according to a ninth embodiment. FIG. 38 is a block diagram illustrating an internal configuration of an embedded board according to a tenth embodiment. FIG. 38 is a block diagram illustrating an internal configuration of an embedded board according to an eleventh embodiment.

  A power conversion device and a power electronics device according to embodiments of the present invention will be described below with reference to the drawings. In each figure, the same or similar components are denoted by the same reference numerals, and the sizes and scales of the corresponding components are independent. For example, when the same components that are not changed are illustrated in cross-sectional views in which a part of the configuration is changed, the sizes and scales of the same components may be different. In addition, the configuration of the power conversion device and the power electronics device actually includes a plurality of members. However, for the sake of simplicity, only the portions necessary for the description are described, and the other portions are omitted. ing.

Embodiment 1 FIG.
Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1 shows an electric circuit configuration of a power conversion device and a power electronics device to which the present patent is applied. In the figure, the power electronics device 100 includes a converter 6, a DC reactor 7, and a power conversion device 40. The converter 6 converts an AC input into a DC output. The power conversion device 40 of the power electronics device 100 includes smoothing capacitors 3a to 3f, a U-phase semiconductor module 1U, a V-phase semiconductor module 1V, a W-phase semiconductor module 1W, a bus bar 4, an output cable 5, and the like. In the electric circuit configuration shown in the figure, the V-phase semiconductor module 1V and the W-phase semiconductor module 1W are described with a part omitted, but have the same configuration as the U-phase semiconductor module 1U. The smoothing capacitors 3 a to 3 f are electrolytic capacitors, and the six electrolytic capacitors are connected in parallel to the DC output of the converter 6.

  The U-phase semiconductor module 1U is composed of three semiconductor modules 1 connected in parallel. Each semiconductor module 1 uses a dual-type module that incorporates an anode-side switching semiconductor element 1p and a cathode-side switching semiconductor element 1n connected in series. Similarly, the V-phase semiconductor module 1V is composed of three semiconductor modules 1 connected in parallel. Similarly, the W-phase semiconductor module 1W includes three semiconductor modules 1 connected in parallel. The parasitic inductance 8 and the parasitic resistance 9 generated in the U-phase semiconductor module 1U, the V-phase semiconductor module 1V, and the W-phase semiconductor module 1W cause the current flowing through the semiconductor module 1 to vary.

  When an AC component is input to the input section of the converter 6, the boosted or stepped AC component is rectified to DC, and the rectified DC is smoothed by the DC reactor 7 and the smoothing capacitors 3a to 3f. The smooth current passes through the bus bar 4, is converted into an AC component by a two-level power converter configured by the U-phase semiconductor module 1 U, the V-phase semiconductor module 1 V, and the W-phase semiconductor module 1 W, and is output from the output cable 5. The Here, the configuration of the two-level power conversion device is shown, but other power conversion circuit configurations such as a three-level power conversion device may be used as long as the semiconductor modules are connected in parallel. By switching the anode side switching semiconductor element 1p and the cathode side switching semiconductor element 1n, an AC output having a frequency different from that of the AC input can be obtained. In addition to the three-phase inverter shown in FIG. 1, the present invention can be applied to a single-phase inverter and a power supply device, and the number of semiconductor modules 1 and smoothing capacitors 3 is generally plural.

  FIG. 2 shows an arrangement configuration of semiconductor modules connected in parallel in the power converter proposed in this patent. The power converter 40 includes semiconductor modules 1a to i, heat sinks 2a to i, smoothing capacitors 3a to 3f, a bus bar 4, and an output cable 5. Similarly to the semiconductor module 1, the heat sink 2 for cooling the semiconductor module has three parallels per phase. The heat sinks 2a to i are composed of a base portion 2x and fin portions 2y. The U-phase semiconductor module 1U is composed of semiconductor modules 1a to 1c. The V-phase semiconductor module 1V is composed of semiconductor modules 1d to f. The W-phase semiconductor module 1W is composed of semiconductor modules 1g to i. The heat sinks 2a to i are fixed to the semiconductor modules 1a to i, respectively.

  Six smoothing capacitors 3 are connected in parallel by bus bars 4 having a laminated structure. Three output cables 5 are provided to support three phases. From the output cable 5U, the U phase of the three-phase AC power is output. From the output cable 5V, the V phase of the three-phase AC power is output. The output cable 5W outputs the W phase of the three-phase AC power. The bus bar 4 has a quadrangular shape having a first side 4a, a second side 4b, a third side 4c, and a fourth side 4d. The U-phase semiconductor module 1U is disposed on the first side 4a. The V-phase semiconductor module 1V is disposed on the second side 4b. The W-phase semiconductor module 1W is disposed on the third side 4c. The fourth side 4d is open.

  FIG. 3A shows the appearance of the smoothing capacitor 3. The smoothing capacitors 3a to 3f each have a main body portion 3x, an anode electrode 3y, and a cathode electrode 3z, and the anode electrode 3y and the cathode electrode 3z are respectively threaded. The main body 3x of the smoothing capacitor 3 is provided with a top side 3t and a bottom side 3s. The anode electrode 3y and the cathode electrode 3z are provided on the head side 3t of the main body 3x. FIG. 3B shows the external appearance of the semiconductor modules 1a to i. The semiconductor module 1 includes an anode side switching semiconductor element 1p and a cathode side switching semiconductor element 1n. From the anode side switching semiconductor element 1p and the cathode side switching semiconductor element 1n, three leads of a gate terminal 1g, a drain terminal 1d and a source terminal 1s extend.

  FIG. 4 shows a connection portion between the smoothing capacitor and the bus bar. Smoothing capacitors 3 a to 3 f are arranged on one side of bus bar 4. The bus bar 4 has a three-layer structure including an anode member 4x, an insulating member 4y, and a cathode member 4z. The anode member 4x and the cathode member 4z are integrated with the insulating member 4y interposed therebetween. The bus bar 4 has two types of through holes. The anode member 4x and the cathode member 4z are connected to the anode electrode 3y and the cathode electrode 3z by screws 21, respectively. The smoothing capacitors 3a to 3f are fixed to either the insulating member side or the cathode member side of the bus bar 4. In addition to the smoothing capacitors 3a to 3f, the semiconductor modules 1a to 1i are connected to the bus bar 4.

  FIG. 5 shows a connection portion between the semiconductor module and the bus bar. Three sets of anode terminals 4v made of an anode member 4x and cathode terminals 4w made of a cathode member 4z are formed at the end portions (first side 4a, second side 4b, and third side 4c) of the bus bar 4. The drain terminal 1 d of the anode side switching semiconductor element 1 p is joined to the anode terminal 4 v of the bus bar 4. The source terminal 1 s of the cathode side switching semiconductor element 1 n is joined to the cathode terminal 4 w of the bus bar 4. The source terminal 1s of the anode side switching semiconductor element 1p and the drain terminal 1d of the cathode side switching semiconductor element 1n are joined to the output cable 5. The gate terminal 1g of the anode side switching semiconductor element 1p is connected to the control cable 22a. The gate terminal 1g of the cathode side switching semiconductor element 1n is connected to the control cable 22b.

  FIG. 6 shows a current path between the semiconductor module and the smoothing capacitor. In the figure, semiconductor modules 1a to 1i, smoothing capacitors 3a to 3f, and bus bars 4 are shown. The distance Laa between the semiconductor module 1a and the smoothing capacitor 3a is expressed as distance laa (+) + distance laa (-). Here, the distance laa (+) represents the distance from the anode of the semiconductor module 1a (the drain terminal 1d of the anode-side switching semiconductor element 1p) to the anode electrode of the smoothing capacitor 3a. The distance laa (−) represents the distance from the cathode of the semiconductor module 1a (the source terminal 1s of the cathode side switching semiconductor element 1n) to the cathode electrode of the smoothing capacitor 3a. Similarly, a distance Lab to a distance Laf between the semiconductor module 1a and the smoothing capacitors 3b to 3f can be defined.

  Assuming that the total current path length for the semiconductor module 1a and the smoothing capacitors 3a to 3f is the total current path length L (a) of the semiconductor module 1a, the total current path length L (a) is a distance Lab + a distance Lab + ... a distance Laf. Can be obtained from If the same discussion is advanced, the total current path lengths L (b) to L (i) of the semiconductor modules 1b to 1i can be obtained. In the embodiment according to the present application, the smoothing capacitors 3a to 3f are connected to the bus bar 4 so that the total current path length L (a), the total current path length L (b)... Is arranged.

  Next, the operation will be described. The heat generated in the switching semiconductor module 1 is kept at a sufficient distance from the smoothing capacitor 3, so that heat is not transferred to the smoothing capacitor 3, but part of the heat is transferred to the bus bar 4. Most of the heat is transferred to the adjacent heat sink 2 for cooling the semiconductor module. Since there is a distance between the semiconductor module 1 and the smoothing capacitor 3, the heat of the semiconductor module 1 can be prevented from being transferred to the smoothing capacitor 3. Further, since the current can be shunted by parallel connection of the semiconductor modules, it is possible to prevent the use of a semiconductor module having a large rated current and a large element size. Since there is no need to dispose capacitors at the top and bottom of the semiconductor module, there are few restrictions on the height of the space in which the power converter is disposed.

  According to the configuration of the first embodiment, the parasitic inductance and the parasitic resistance existing in the bus bar between the semiconductor module and the smoothing capacitor are made uniform. Since variations in surge voltage at the time of switching due to parasitic inductance can be suppressed, it is not necessary to take measures against a decrease in switching speed, and a decrease in efficiency of the semiconductor module can be prevented. Since a large snubber circuit does not require excessive surge voltage protection, the snubber circuit configuration is downsized.

  When semiconductor modules are connected in parallel, parasitic inductance and parasitic resistance are generated. When the semiconductor module is switched, variation in the shunting current of the conduction current is reduced, so that the cooling mechanism can be miniaturized by extending the life of the semiconductor module by uniform load distribution and optimal loss calculation and cooling design. Since the ringing frequency variation caused by the parasitic inductance and the capacitance component present in the semiconductor module can be suppressed, the ringing filter and snubber can be reduced in size, and the countermeasure filter and snubber design can be simplified.

Embodiment 2. FIG.
The second embodiment will be described with reference to the drawings. FIG. 7A is a bird's-eye view showing the power converter, and FIG. 7B is a front view showing the power converter. In the present embodiment, the power conversion device 40 is stored in the built-in board 11. A cooling device 10 such as a cooling fan is disposed on the ceiling of the built-in board 11. The power converter 40 is placed on the partition plate 11 a of the built-in board 11. The heat sink 2 arranged vertically with respect to the bus bar 4 is cooled by a cooling device 10 arranged on the ceiling portion of the built-in board 11. A wind heated by the semiconductor module 1 is released from the built-in board 11 to the outside, and the semiconductor module 1 releases a necessary heat radiation amount. Moreover, since the current is shunted by the parallel connection of the semiconductor modules 1, it is not necessary to use a semiconductor module having a large rated current and a large element size.

  FIG. 8A is a bird's-eye view showing the flow of wind inside the built-in board, and FIG. 8B is a front view showing the flow of wind inside the built-in board. Since the smoothing capacitor is arranged only at the lower part of each semiconductor module 1, the height restriction on the arrangement space is relaxed. Since there is a distance between the semiconductor module 1 and the smoothing capacitor 3, the heat of the semiconductor module 1 can be prevented from being transferred to the capacitor. In addition, since the distances between the semiconductor module 1 and the heat sink 2 and the cooling device 10 can be arranged without difference in each phase, the cooling device 10 can cause the air to flow uniformly through the heat sink 2. It is possible to suppress the temperature variation of the semiconductor module due to the uneven cooling performance and the overload on the single semiconductor module due to the temperature variation.

Embodiment 3 FIG.
The third embodiment will be described with reference to the drawings. FIG. 9A is a bird's-eye view showing the flow of wind inside the built-in board, and FIG. 9B is a front view showing the flow of wind inside the built-in board. The power conversion device 40 is stored in the built-in board 11. As shown in the figure, air holes 12 are provided in the upper and lower panels. When it is impossible to arrange a cooling device on the ceiling of the panel, it is possible to make the air flow uniformly through the heat sink 2 by natural convection by providing air holes 12 in the upper part and the lower part of the panel. The temperature variation of the semiconductor module due to the bias and the overload to the single semiconductor module due to the temperature variation can be suppressed.

Embodiment 4 FIG.
In the first to third embodiments, the heat sink 2 is arranged vertically in a U-shape, and the smoothing capacitor 2 is arranged inside the U-shape so that the distance from each semiconductor module is uniform.
Depending on the number of smoothing capacitors, it may be difficult to make the distance between the semiconductor module and the smoothing capacitor uniform. Therefore, in this embodiment, a hexagonal bus bar 4 is prepared as shown in FIG. doing. The bus bar 4 has a first side 4a, a second side 4b, a third side 4c, a fourth side 4d, a fifth side 4e, a sixth side 4f, a seventh side 4g, an eighth side 4h, and a ninth side 4i. It has a square shape.

  Every two in-phase semiconductor modules 1 are arranged on each side of the bus bar. Accordingly, the semiconductor module 1a is disposed on the first side 4a. The semiconductor module 1b is disposed on the fourth side 4d. The semiconductor module 1c is disposed on the seventh side 4g. The semiconductor module 1d is disposed on the second side 4b. The semiconductor module 1e is disposed on the fifth side 4e. The semiconductor module 1f is disposed on the eighth side 4h. The semiconductor module 1g is arranged on the third side 4c. The semiconductor module 1h is disposed on the sixth side 4f. The semiconductor module 1i is disposed on the ninth side 4i.

  A heat sink 2 for cooling the semiconductor module is arranged vertically adjacent to the semiconductor module 1. The semiconductor module 1 and the heat sink 2 constitute a hexagon. A smoothing capacitor 3 is disposed inside the octagon and is connected to the semiconductor module 1 by a bus bar 4. Also in this embodiment, the smoothing capacitors 3a to 3f are arranged on the bus bar 4 so that the total current path length L (a), the total current path length L (b)... doing.

  With the above configuration, the distance between the semiconductor module and the heat sink can be arranged without difference in each phase even with the number of smoothing capacitors in which the distance between the semiconductor module and the smoothing capacitor is not uniform in the U-shaped configuration. The parasitic inductance and parasitic resistance existing in the bus bar between the semiconductor module and the smoothing capacitor are made uniform. Since variations in surge voltage during switching caused by parasitic inductance can be suppressed, it is not necessary to take measures against a decrease in switching speed, and a decrease in efficiency of the semiconductor module can be prevented. Since a large snubber circuit does not require excessive surge voltage protection, the snubber circuit configuration is downsized.

  When semiconductor modules are connected in parallel, parasitic inductance and parasitic resistance are generated. When the semiconductor module is switched, the variation in the shunt current of the conduction current is reduced, so that the life of the semiconductor module can be extended by uniform load distribution, and the cooling mechanism can be downsized by optimal loss calculation and cooling design. Since the ringing frequency variation caused by the parasitic inductance and the capacitance component existing in the semiconductor module can be suppressed, the ringing countermeasure filter and snubber can be downsized, and the countermeasure filter and snubber design can be simplified.

Embodiment 5 FIG.
The fifth embodiment will be described with reference to the drawings. FIG. 11A is a bird's-eye view showing the power converter, and FIG. 11B is a front view showing the power converter. The power conversion device 40 is stored in the built-in board 11. A cooling device 10 such as a cooling fan is disposed on the ceiling of the built-in board 11. According to the present embodiment, since the distances between the semiconductor module 1 and the heat sink 2 and the cooling device 10 can be arranged without difference in each phase, the cooling device 10 can evenly flow the air to each heat sink 2. . It is possible to suppress the temperature variation of the semiconductor module due to the uneven cooling performance and the overload on the single semiconductor module due to the temperature variation.

Embodiment 6 FIG.
The sixth embodiment will be described with reference to the drawings. FIG. 12A is a bird's-eye view showing the power converter, and FIG. 12B is a front view showing the power converter. In the first to fifth embodiments, the heat sink 2 has the base portion arranged vertically, but there may be a case where the cooling device cannot be arranged on the top of the panel. In the present embodiment, the heat sink 2 that has been arranged vertically is arranged so that the base portion is lateral to the bus bar, and a switching semiconductor module is arranged on the heat sink 2. A smoothing capacitor 3 is arranged at the center of the bus bar 4 and connected to the semiconductor module 1 by the bus bar 4.

Embodiment 7 FIG.
The seventh embodiment will be described with reference to the drawings. FIG. 13A is a bird's-eye view showing a power converter, and FIG. 13B is a front view showing the power converter. The power conversion device 40 is stored in the built-in board 11. A cooling device 10 such as a cooling fan is disposed on the side surface of the built-in board 11. The power converter 40 is placed on the partition plate 11 a of the built-in board 11. With the above configuration, cooling can be performed from the side surface of the built-in board 11 by the cooling device 10. Since it is possible to flow and cool not only the heat sink 2 arranged in a horizontal direction so as to be parallel to the direction of the wind but also the smoothing capacitor 3, the temperature of the smoothing capacitor can be prevented from rising and the life can be extended.

Embodiment 8 FIG.
An eighth embodiment will be described with reference to the drawings. FIG. 14A is a bird's-eye view showing the power converter, and FIG. 14B is a front view showing the power converter. The power conversion device 40 is stored in the built-in board 11. An air hole 12 is disposed in the side surface of the built-in board 11. The power converter 40 is placed on the partition plate 11 a of the built-in board 11. When it is impossible to dispose the cooling device on the ceiling of the panel, the air holes 12 are provided on both sides of the panel, so that it can be incorporated into a mechanism that cools by wind during traveling such as a passenger vehicle. . Since it is possible to flow and cool not only the heat sink 2 arranged in a horizontal direction so as to be parallel to the direction of the wind but also the smoothing capacitor 3, the temperature of the smoothing capacitor can be prevented from rising and the life can be extended.

Embodiment 9 FIG.
Embodiment 9 will be described with reference to the drawings. FIG. 15A is a bird's-eye view showing the power converter, and FIG. 15B is a front view showing the power converter. In this embodiment, a nine-sided bus bar 4 is prepared. Every two in-phase semiconductor modules 1 are arranged on each side of the bus bar. A heat sink 2 for cooling the semiconductor module is disposed side by side adjacent to the semiconductor module 1. The semiconductor module 1 and the heat sink 2 constitute a hexagon. A smoothing capacitor 3 is disposed inside the octagon and is connected to the semiconductor module 1 by a bus bar 4.

  With the above configuration, the distance between the semiconductor module and the heat sink can be arranged without difference in each phase even with the number of smoothing capacitors in which the distance between the semiconductor module and the smoothing capacitor is not uniform in the U-shaped configuration. The parasitic inductance and parasitic resistance existing in the bus bar between the semiconductor module and the smoothing capacitor are made uniform. Since variations in surge voltage during switching caused by parasitic inductance can be suppressed, it is not necessary to take measures against a decrease in switching speed, and a decrease in efficiency of the semiconductor module can be prevented. Since a large snubber circuit does not require excessive surge voltage protection, the snubber circuit configuration is downsized.

  When semiconductor modules are connected in parallel, parasitic inductance and parasitic resistance are generated. When the semiconductor module is switched, the variation in the shunt current of the conduction current is reduced, so that the life of the semiconductor module is extended by uniform load distribution, and the cooling mechanism can be downsized by optimal loss calculation and cooling design. Since the ringing frequency variation caused by the parasitic inductance and the capacitance component existing in the semiconductor module can be suppressed, the ringing countermeasure filter and snubber can be downsized, and the countermeasure filter and snubber design can be simplified.

Embodiment 10 FIG.
The tenth embodiment will be described with reference to the drawings. FIG. 16A is a bird's-eye view showing the power converter, and FIG. 16B is a front view showing the power converter. The power conversion device 40 is stored in the built-in board 11. A cooling device 10 such as a cooling fan is disposed on the side surface of the built-in board 11. The power converter 40 is placed on the partition plate 11 a of the built-in board 11. With the above configuration, cooling can be performed from the side surface of the built-in board 11 by the cooling device 10. Since it is possible to flow and cool not only the heat sink 2 arranged in a horizontal direction so as to be parallel to the direction of the wind but also the smoothing capacitor 3, the temperature of the smoothing capacitor can be prevented from rising and the life can be extended.

Embodiment 11 FIG.
An eleventh embodiment will be described with reference to the drawings. FIG. 17A is a bird's-eye view showing the power converter, and FIG. 17B is a front view showing the power converter. The power conversion device 40 is stored in the built-in board 11. An air hole 12 is disposed in the side surface of the built-in board 11. The power converter 40 is placed on the partition plate 11 a of the built-in board 11. When it is impossible to dispose the cooling device on the side of the panel, the air holes 12 are provided on both sides of the panel, so that it can be incorporated into a mechanism that cools by wind during traveling such as a passenger vehicle. Since it is possible to flow and cool not only the heat sink 2 arranged in a horizontal direction so as to be parallel to the direction of the wind but also the smoothing capacitor 3, the temperature of the smoothing capacitor can be prevented from rising and the life can be extended.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

DESCRIPTION OF SYMBOLS 1 Semiconductor module, 2 Heat sink, 3 Smoothing capacitor, 4 Bus bar, 5 Output cable, 6 Converter, 7 DC reactor, 11 Built-in board, 40 Power converter, 100 Power electronics device

Claims (10)

A plurality of smoothing capacitors in which an anode electrode and a cathode electrode are provided on the head side of the main body,
A bus bar in which an anode member and a cathode member are integrated with an insulating member interposed therebetween;
A plurality of semiconductor modules having an anode-side switching semiconductor element and a cathode-side switching semiconductor element connected in series, and fixed to a heat sink having a fin portion and a base portion;
The anode electrodes of the plurality of smoothing capacitors are connected to the anode member of the bus bar,
The cathode electrodes of the plurality of smoothing capacitors are connected to the cathode member of the bus bar,
The plurality of smoothing capacitors are disposed on one side of the bus bar,
The plurality of semiconductor modules are power converters arranged around the bus bar. A converter that converts AC input to DC output;
A plurality of smoothing capacitors, wherein an anode electrode and a cathode electrode are provided on the head side of the main body, and are connected in parallel to the DC output of the converter;
First to ninth heat sinks having fin portions and base portions;
A bus bar in which an anode member and a cathode member are integrated with an insulating member interposed therebetween;
A first semiconductor module, a second semiconductor module, which have an anode-side switching semiconductor element and a cathode-side switching semiconductor element connected in series, output a U phase of AC power, and are connected in parallel to each other; A third semiconductor module;
A fourth semiconductor module, a fifth semiconductor module, which have an anode-side switching semiconductor element and a cathode-side switching semiconductor element connected in series, output the V phase of AC power, and are connected in parallel to each other; A sixth semiconductor module;
A seventh semiconductor module, an eighth semiconductor module, which have an anode-side switching semiconductor element and a cathode-side switching semiconductor element connected in series, output a W phase of AC power, and are connected in parallel to each other; A ninth semiconductor module;
The first to ninth heat sinks are fixed to the first to ninth semiconductor modules, respectively.
The anode electrodes of the plurality of smoothing capacitors are connected to the anode member of the bus bar,
The cathode electrodes of the plurality of smoothing capacitors are connected to the cathode member of the bus bar,
The power electronics device in which the plurality of smoothing capacitors are arranged on one side of the bus bar. The bus bar has a rectangular shape having a first side, a second side, a third side, and a fourth side,
The first semiconductor module, the second semiconductor module, and the third semiconductor module are disposed on a first side of the bus bar,
The fourth semiconductor module, the fifth semiconductor module, and the sixth semiconductor module are disposed on the second side of the bus bar,
The seventh semiconductor module, the eighth semiconductor module, and the ninth semiconductor module are disposed on the third side of the bus bar,
The power electronics device according to claim 2, wherein a fourth side of the bus bar is open. The bus bar has a nine-sided shape having a first side, a second side, a third side, a fourth side, a fifth side, a sixth side, a seventh side, an eighth side, and a ninth side;
The first semiconductor module is disposed on a first side of the bus bar,
The second semiconductor module is disposed on a fourth side of the bus bar,
The third semiconductor module is disposed on a seventh side of the bus bar;
The fourth semiconductor module is disposed on a second side of the bus bar,
The fifth semiconductor module is disposed on a fifth side of the bus bar,
The sixth semiconductor module is disposed on the eighth side of the bus bar,
The seventh semiconductor module is disposed on a third side of the bus bar;
The eighth semiconductor module is disposed on the sixth side of the bus bar,
The power electronics device according to claim 2, wherein the ninth semiconductor module is disposed on a ninth side of the bus bar.   5. The power electronics device according to claim 3, wherein the first to ninth semiconductor modules and the first to ninth heat sinks are arranged vertically.   5. The power electronics device according to claim 3, wherein the first to ninth semiconductor modules and the first to ninth heat sinks are disposed sideways. 6.   7. The bus bar, the plurality of smoothing capacitors, the first to ninth semiconductor modules, and the first to ninth heat sinks are stored in a built-in board. Power electronics equipment.   The power electronics device according to claim 7, wherein the built-in board has a cooling device attached to a ceiling portion.   The power electronics device according to claim 7, wherein a cooling device is attached to a side portion of the built-in board.   The power electronics device according to claim 7, wherein an air hole is formed in a side surface portion of the built-in board.

Images