JP2016149549A - Method of manufacturing reclaimed semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for reclaiming a semiconductor wafer that is too thin to be reused.SOLUTION: A method of manufacturing a reclaimed semiconductor wafer by cutting out a new semiconductor wafer 12 having a notch 13 from a semiconductor wafer 1 having a notch 11 includes a lamination step for laminating the semiconductor wafer 1, and a cutting step for cutting out a new semiconductor wafer 12 from the laminated semiconductor wafer 1. Since a small semiconductor wafer is usable even if it is thin, even if the semiconductor wafer 1 is thin and cannot be reused, the new semiconductor wafer 12 is usable, and thereby the semiconductor wafer 1 that cannot be reused can be reclaimed to a new semiconductor wafer 12.SELECTED DRAWING: Figure 4

Description

  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a regenerated semiconductor wafer, and more particularly to a method for manufacturing a regenerated semiconductor wafer that regenerates a semiconductor wafer that is no longer used after the use of a dummy wafer or the like used for a product test of a semiconductor wafer. About.

  The semiconductor wafer is obtained by thinly cutting a cylindrical ingot formed of single crystal silicon or the like into a disk shape. Such a semiconductor wafer is used as a material for manufacturing a semiconductor element.

  FIG. 10 is a plan view showing an example of the shape and size of such a semiconductor wafer. The semiconductor wafer 5 shown in FIG. 10A has a straight portion 51 called an orientation flat. The semiconductor wafer 6 shown in (b) has a notch 61 called a notch. These orientation flat 51 and notch 61 are for designating the crystal orientation of the semiconductor wafer. In general, semiconductor wafers are classified into those having an orientation flat 51 as shown in FIG. 10A and those having a notch 61 as shown in FIG.

  The semiconductor wafer 5 having the orientation flat 51 has a circumference diameter of 50 mm to 200 mm defined by JEITA (Japan Electronics and Information Technology Association) standard. The semiconductor wafer 6 having the notch 31 is defined by the JEITA standard to be used when the diameter of the circumferential portion is 200 mm to 300 mm. In this JEITA standard, a semiconductor wafer with a diameter of 150 mm has a tolerance of ± 20 μm with a thickness of 625 μm, a semiconductor wafer with a diameter of 200 mm has a tolerance of ± 20 μm with a thickness of 725 μm, and a semiconductor wafer with a diameter of 300 mm has a tolerance of 775 μm. It is specified to be ± 25 μm. Moreover, it is prescribed | regulated so that it may be used when the diameter of a circumference part is 50 mm-150 mm by SEMI (Semiconductor Equipment and Materials International) standard. The semiconductor wafer 6 having the notch 61 is defined by the SEMI standard to be used when the diameter of the circumferential portion is 200 mm to 300 mm. According to this SEMI standard, a semiconductor wafer having a diameter of 150 mm has a tolerance of ± 20 μm with a thickness of 675 μm, a semiconductor wafer having a diameter of 200 mm has a tolerance of ± 20 μm with a thickness of 725 μm, and a semiconductor wafer with a diameter of 300 mm has a tolerance of 775 μm. It is specified to be ± 20 μm. In other words, a semiconductor wafer with a large diameter needs to be thick.

  When manufacturing a semiconductor wafer, a semiconductor wafer that does not satisfy a predetermined resistance value or flatness may be manufactured. Such a semiconductor wafer is called a dummy wafer, and a specific integrated circuit is formed and used for a semiconductor chip production support tool, a product evaluation test, or the like, or used for a test in the course of manufacturing. . The dummy wafer is removed by grinding the integrated circuit formed on the surface and then regenerated by forming a new integrated circuit, but the conventional dummy wafer regeneration method is by mechanical grinding such as grinding. Therefore, the thickness was reduced by several tens of μm by one reproduction, and the thickness stipulated in the JEITA standard or the like was not satisfied.

  In view of this, for example, a method of reclaiming a used semiconductor wafer by the minimum grinding is proposed by performing chemical mechanical polishing after removing the surface of the used semiconductor wafer by wet etching (for example, a patent) Reference 1).

JP 2010-283134 A

  However, even such a method of reclaiming a used semiconductor wafer is a method of forming a new integrated circuit by removing the surface of the used semiconductor wafer. It becomes thinner and does not satisfy the thickness specified in the JEITA standard or the like. Therefore, the used semiconductor wafer cannot be recycled and used when it becomes thinner than the thickness defined in the JEITA standard or the like. Such a non-recyclable semiconductor wafer must be disposed of after removing the thin film on the surface, and it has been expensive even when disposed of.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a new smaller semiconductor wafer by generating a plurality of new semiconductor wafers from semiconductor wafers that have been used or are no longer used with the same diameter. .

  In order to solve the above problems, the invention of claim 1 is a method of manufacturing a regenerated semiconductor wafer in which a substantially disc-shaped semiconductor wafer is regenerated into a new semiconductor wafer, wherein the semiconductor wafer is stacked and fixed. And a cutting step of cutting the stacked semiconductor wafer substantially perpendicularly to the stacking direction to cut out a new semiconductor wafer.

  According to this invention, a semiconductor wafer is laminated by the lamination process, and a new smaller semiconductor wafer is cut out from the semiconductor wafer by the cutting process.

  According to a second aspect of the present invention, in the method for manufacturing a reclaimed semiconductor wafer according to the first aspect, the method further comprises a grinding step of grinding the new semiconductor wafer stacked after the cutting step into a substantially cylindrical shape. And

  According to a third aspect of the present invention, in the method of manufacturing a reclaimed semiconductor wafer according to any one of the first or second aspects, the stacking step is performed by cleaning or wet etching the surface of the semiconductor wafer or the semiconductor wafer. Alternatively, an adhesive is applied and laminated on the polished surface.

  According to a fourth aspect of the present invention, in the method for producing a recycled semiconductor wafer according to the third aspect, the adhesive is a liquid or solid wax at room temperature.

  According to a fifth aspect of the present invention, in the method for manufacturing a reclaimed semiconductor wafer according to the fourth aspect, in the stacking step, the wax is applied while the semiconductor wafer is heated.

  According to a sixth aspect of the present invention, in the method for manufacturing a recycled semiconductor wafer according to any one of the first to fifth aspects, the semiconductor wafer has a notch that is a notch on a circumference, and the new semiconductor The wafer is characterized in that a notch that is a notch for designating a crystal orientation is formed.

  According to a seventh aspect of the present invention, in the method of manufacturing a reclaimed semiconductor wafer according to the sixth aspect, in the cutting step, the new semiconductor wafer is cut out while leaving the notch of the semiconductor wafer.

  The invention of claim 8 is the method for producing a reclaimed semiconductor wafer according to any one of claims 6 and 7, wherein the semiconductor wafer is a semiconductor wafer having a diameter of approximately 300 mm, and the new semiconductor wafer is approximately It is a semiconductor wafer having a disk shape and a diameter of approximately 200 mm.

  According to a ninth aspect of the present invention, in the method for manufacturing a recycled semiconductor wafer according to any one of the first to eighth aspects, a plurality of new semiconductor wafers are generated from one semiconductor wafer. And

  According to a tenth aspect of the present invention, in the method for manufacturing a reclaimed semiconductor wafer according to the ninth aspect, the plurality of new semiconductor wafers are formed in different sizes.

  The invention of claim 11 is the method for manufacturing a reclaimed semiconductor wafer according to any one of claims 1 to 5, wherein the semiconductor wafer has a notch which is a notch on a circumference, and the new semiconductor The wafer is characterized by having an orientation flat which is a straight line portion for designating crystal orientation.

  According to a twelfth aspect of the present invention, in the method of manufacturing a reclaimed semiconductor wafer according to the eleventh aspect, two new semiconductor wafers are generated from one semiconductor wafer so as to be in contact with the orientation flat. It is characterized by that.

  The invention of claim 13 is the method for manufacturing a reclaimed semiconductor wafer according to any one of claims 11 and 12, wherein the semiconductor wafer is a semiconductor wafer having a diameter of approximately 300 mm, and the new semiconductor wafer is approximately It is a semiconductor wafer having a disk shape and a diameter of approximately 150 mm.

  The invention according to claim 14 is the method for manufacturing a recycled semiconductor wafer according to any one of claims 1 to 13, wherein a jig provided with a protrusion is used in the stacking step, and the protrusion is the semiconductor wafer. The semiconductor wafer is fixed by supporting the side surface on which the layers are stacked.

  The invention of claim 15 is the method of manufacturing a reclaimed semiconductor wafer according to any one of claims 1 to 14, wherein in the cutting step, the new semiconductor wafer is cut out using a band saw. To do.

  According to the invention of claim 1, since a smaller new semiconductor wafer is cut out from the semiconductor wafer by the cutting process, the semiconductor wafer before being cut cannot be used without satisfying the thickness specified in the JEITA standard or the like. Even so, the new semiconductor wafer becomes smaller, and the thickness required by the JEITA standard becomes thinner, so that it can be reused. In addition, since a plurality of semiconductor wafers are stacked in the stacking process and the cutting process is performed, it is possible to process the plurality of semiconductor wafers together.

  According to the invention of claim 2, since the new semiconductor wafer is ground into a substantially cylindrical shape by the grinding process, the new semiconductor wafer can be processed into a predetermined shape, for example, a shape defined in the JEITA standard or the like. Become.

  According to the invention of claim 3, by applying and laminating the adhesive on the surface of the semiconductor wafer, the semiconductor wafer can be firmly fixed, and the semiconductor wafer can be prevented from shifting during the subsequent cutting process or grinding process. it can.

  According to the invention of claim 4, since the liquid or solid wax is used for the adhesive, the semiconductor wafer can be easily fixed.

  According to the invention of claim 5, since the semiconductor wafer is laminated in a heated state, the wax can be easily applied to the semiconductor wafer.

  According to the invention of claim 6, since a new semiconductor wafer having a notch is cut out from a semiconductor wafer having a notch, a new semiconductor wafer smaller than the original semiconductor wafer can be cut as large as possible. The crystal orientation can be specified.

  According to the invention of claim 7, since a new semiconductor wafer is cut out while leaving the notch of the semiconductor wafer, it is not necessary to form the notch again, so that the labor of processing is omitted and the notch formed in the original semiconductor wafer is removed. Can be used effectively.

  According to the invention of claim 8, it is possible to generate a new semiconductor wafer having a smaller diameter of approximately 200 mm from a semiconductor wafer having a diameter of approximately 300 mm.

  According to the ninth aspect of the present invention, since a plurality of new semiconductor wafers are generated from one semiconductor wafer, it is possible to regenerate a smaller new semiconductor wafer.

  According to the invention of claim 10, since new semiconductor wafers of different sizes are generated, the original semiconductor wafer can be used effectively.

  According to the invention of claim 11, since a new semiconductor wafer having an orientation flat is cut out from the semiconductor wafer having a notch, the new semiconductor wafer having a smaller orientation flat is cut out from the semiconductor wafer as large as possible. Enable and specify the crystal orientation.

  According to the twelfth aspect of the present invention, since a new semiconductor wafer having two orientation flats is cut out from one semiconductor wafer, the original semiconductor wafer can be used effectively.

  According to the thirteenth aspect of the present invention, it is possible to generate a new semiconductor wafer having two orientation flats each having a smaller diameter of approximately 150 mm from a smaller semiconductor wafer having a diameter of approximately 300 mm.

  According to the fourteenth aspect of the present invention, since the jig provided with the protrusion is used to support and fix the notch and the side surface of the semiconductor wafer by the protrusion, the stacked semiconductor wafers are prevented from being displaced.

  According to the invention of claim 15, since a new semiconductor wafer is cut out using the band saw, it becomes possible to cut out a new semiconductor wafer easily.

1 is a perspective view showing a semiconductor wafer 1 and a new semiconductor wafer 12 according to an embodiment of the present invention. It is a perspective view which shows the new semiconductor wafer 12 using the notch 11 of the semiconductor wafer 1 of FIG. FIG. 2 is a perspective view showing the semiconductor wafer 1 and new semiconductor wafers 15 and 16 in FIG. 1. FIG. 2 is a perspective view showing a method for manufacturing a new semiconductor wafer 12 from the semiconductor wafer of FIG. 1, a perspective view (a) showing a stacking process, a perspective view (b) showing a cutting process, and a new semiconductor wafer cut out; 12 is a perspective view (c) of FIG. FIG. 2 is a perspective view showing a method for manufacturing a new semiconductor wafer 15 from the semiconductor wafer of FIG. 1, a perspective view (a) showing a stacking process, a perspective view (b) showing a cutting process, and a perspective view showing a grinding process (FIG. c). It is a figure which shows the table apparatus 3 used for the lamination | stacking process of FIG.4 (a), (b), FIG.5 (a), (b), and a cutting process, The perspective view which shows the whole table apparatus 3 (a) FIG. 6 is a cross-sectional view (b) showing the inside of the driving device 33. It is a perspective view which shows the example of the jig | tool 4 which laminates | stacks the semiconductor wafer 1 in the lamination | stacking process of Fig.4 (a) and Fig.5 (a). It is a perspective view which shows the example of the state which is using the jig | tool 4 of FIG. 7 at the lamination process. It is an expansion perspective view which shows the latching tool 43 in the jig | tool 4 of FIG. FIG. 2 is a plan view showing an example of the shape and size of a semiconductor wafer, a plan view (a) showing a semiconductor wafer 5 having an orientation flat 51 and a plan view (b) showing a semiconductor wafer 6 having a notch 61.

  The present invention will be described below based on the illustrated embodiments.

  1 to 9 show an embodiment of the present invention, FIG. 1 is a perspective view showing a semiconductor wafer 1 and a new semiconductor wafer 12 according to this embodiment, and FIG. 2 is a semiconductor of FIG. FIG. 3 is a perspective view showing a new semiconductor wafer 12 using the notch 11 of the wafer 1, and FIG. 3 is a perspective view showing the semiconductor wafer 1 and new semiconductor wafers 15 and 16 in FIG. 1. The present invention relates to a method for manufacturing a new semiconductor wafer 12 or new semiconductor wafers 15 and 16 from the semiconductor wafer 1.

  The semiconductor wafer 1 is, for example, a semiconductor wafer having a diameter of 300 mm, and a semiconductor circuit is formed on a surface called a dummy wafer or used for a test in an intermediate process, and is cut out on a circumference. It has a notch 11. The notch 11 is for designating the crystal orientation of the semiconductor wafer 1. In this case, according to the JEITA standard or the like, the thickness of the semiconductor wafer 1 needs to be 775 μm with a tolerance of ± 20 μm. Here, it is assumed that the semiconductor wafer 1 has been reused several times and cannot be regenerated, and has a thickness of less than 795 μm.

  Here, a manufacturing process of such a semiconductor wafer will be described. An ingot formed of single crystal silicon or the like is cut and ground to form a cylindrical block. In order to perform X-ray orientation measurement on this block to measure the crystal orientation and specify the crystal orientation, a notch or an orientation flat is formed. Thereafter, the wafer is sliced from the block by a wire saw or the like.

  The sliced semiconductor wafer is chamfered by beveling. Beveling means that silicon is hard and fragile, and if the wafer end face remains sharp during slicing, it will easily crack or chip in subsequent processes such as transfer and alignment, and the fragments may damage or contaminate the wafer surface. Therefore, chamfering is performed in advance. The semiconductor wafer after beveling is lapped by rubbing while pouring a lapping solution containing abrasive grains such as alumina, etching is performed to smooth the fine irregularities on the surface by chemical polishing, and further, heat treatment is performed. Applied. Lapping is performed in order to make the thickness uniform while removing irregularities in slicing. Thereafter, in order to form a final processed surface, polishing is performed by performing chemical mechanical polishing and smoothing, and the product is manufactured through finish cleaning, inspection, and the like.

  A new semiconductor wafer 12 shown in FIG. 1 is a semiconductor wafer having a diameter of 200 mm, for example, and has a notch 13 which is a notch on the circumference. In this new semiconductor wafer 12, the notch 13 is formed in the same direction as the notch 11 in order to maintain the crystal orientation. The new semiconductor wafer 12 may be cut out from the central portion as shown in FIG. 1, and the notch 11 of the semiconductor wafer 1 is left as it is as shown in FIG. May be used. In this case, according to the JEITA standard, it is necessary that the thickness is 725 μm and the tolerance is ± 20 μm. However, since the thickness of the semiconductor wafer 1 is less than 795 μm, a predetermined thickness is obtained by lapping after being cut out. It is polished to the thickness.

  The new semiconductor wafers 15 and 16 shown in FIG. 3 are, for example, semiconductor wafers having a diameter of 150 mm, have an orientation flat 17 that is a straight line portion on the circumference, and are arranged to face each other so as to contact the orientation flat 17. Has been. The reason for this arrangement is to make it possible to cut out new semiconductor wafers 15 and 16 as much as possible and to maintain the crystal orientation. In this case, according to the JEITA standard, it is necessary that the thickness is 625 μm and the tolerance is ± 20 μm. However, since the thickness of the semiconductor wafer 1 is less than 795 μm, the predetermined thickness is obtained by lapping after being cut out. It is polished to the thickness.

  A new method for manufacturing the semiconductor wafer 12 shown in FIGS. 1 and 2 is shown in FIGS. The semiconductor wafer 1 is subjected to a lamination process in which an adhesive is applied to the surface and laminated so that the notches 11 face the same direction, and the state shown in FIG. The number of stacked semiconductor wafers 1 is, for example, 50. Here, the reason why the adhesive is applied to the surface of the semiconductor wafer 1 is that the semiconductor wafer 1 can be firmly fixed and the semiconductor wafer 1 is prevented from shifting during the subsequent cutting process.

  The semiconductor wafer 1 is cleaned with, for example, hydrofluoric acid before being stacked. This is for the purpose of removing the surface natural oxide film, but other solvents may be used and may not be performed depending on the surface state of the semiconductor wafer 1. Then, warm air is applied, for example with a dryer etc., and it heats. This is for facilitating the application of wax described below. Moreover, the adhesive used at this time is, for example, wax purified by a rosin resin. This wax may be liquid or solid at room temperature. For example, in the case of a liquid, when about 0.5 cc to 1 cc, for example, is dropped on one semiconductor wafer 1, the wax spreads thinly on the surface of the semiconductor wafer 1. When the semiconductor wafers 1 are further laminated in this state, the wax is spread between the two semiconductor wafers 1 to fix the semiconductor wafers 1 to each other. Thereby, the shift | offset | difference of the semiconductor wafer 1 in the middle of a subsequent cutting process can be prevented.

  The laminated semiconductor wafer 1 is subjected to a cutting process in which, for example, a band saw 2 shown in FIG. FIG. 4C shows a state where a new semiconductor wafer 12 is cut out by this cutting step. In this new semiconductor wafer 12, the notch 11 is left as it is as a notch 13. In this state, new semiconductor wafers 12 are peeled one by one from the stacked state, and the wax applied to the surface is washed. The new semiconductor wafer 12 after cleaning is subjected to the above-mentioned beveling, lapping, and shaving to a predetermined thickness, for example, about 750 μm. Thereafter, the product is manufactured through etching and polishing processes. Note that the remaining cut piece from which the new semiconductor wafer 12 is cut can also be used to regenerate a semiconductor wafer having a diameter of less than 100 mm, for example.

  Further, a new method for manufacturing the semiconductor wafers 15 and 16 is shown in FIGS. As in the state shown in FIG. 4A, the semiconductor wafer 1 is subjected to a laminating process in which wax is applied to the surface and the notches 14 face in the same direction, and the state shown in FIG. become. The laminated semiconductor wafer 1 is cut using, for example, a band saw, and a cutting process is performed in which the semiconductor wafer 1 is divided into cut pieces 1A, 1B, 1C, and 1D. FIG. 5B shows a state where the cut pieces 1A, 1B, 1C, and 1D are divided by this cutting step.

  The cut pieces 1A and 1D are obtained by cutting approximately 1/6 of the arc in a straight line perpendicular to the stacking direction of the semiconductor wafer 1. The cut pieces 1B and 1C are portions obtained by cutting the remaining portions obtained by cutting the cut pieces 1A and 1D in half in the vertical direction, and these portions are used as new semiconductor wafers 15 and 16. The cut pieces 1A and 1D can also be used to regenerate a semiconductor wafer having a diameter of 50 mm or less.

  The cut pieces 1B and 1C thus cut are cut into a substantially cylindrical shape using, for example, a band saw and ground into a substantially columnar shape with a diameter of 150 mm, so that new semiconductor wafers 15 and 16 are generated. A new semiconductor wafer 15 generated by this grinding process is shown in FIG. In the new semiconductor wafer 15, the crystal orientation is measured and an orientation flat is formed on the circumference. The new ground semiconductor wafers 15 and 16 are peeled one by one from the stacked state, and the wax applied to the surface is washed. The semiconductor wafers 15 and 16 after cleaning are subjected to the above-mentioned beveling, lapping, and shaving to a predetermined thickness, for example, about 700 μm. Thereafter, the product is manufactured through etching and polishing processes.

  For example, as shown in FIGS. 6A and 6B, the semiconductor wafer 1 is stacked and cut as shown in FIGS. 4A, 4B, 5A, and 5B. A table device 3 is used. The table device 3 is a device for rotating the semiconductor wafer 1 in a stacked state. As shown in FIG. 6A, the table device 3 is mainly a mounting table 31, a rotating shaft 32, a driving device 33, and a fixed table. 34, a cable 35, and a control table 36, for example, the mounting table 31 is set to rotate once in a predetermined time, and the rotation speed can be adjusted by the control table 36.

  The mounting table 31 is a table for mounting and laminating the semiconductor wafers 1. For example, the mounting table 31 is formed in a disk shape having a diameter of 100 mm or 150 mm and is rotatably provided. The rotating shaft 32 is a shaft for rotating the mounting table 31, and is formed in, for example, a metal thin cylindrical shape. The drive device 33 is a device for rotating the mounting table 31 via the rotation shaft 32. The fixed base 34 is a base for the table apparatus 3 to place the semiconductor wafer 1 so as not to move during operation. The cable 35 is a cable for transmitting the control signal of the control stand 36 to the drive device 33. The control table 36 is a device for controlling the rotation of the mounting table 31, and includes a speed adjustment dial 36a, a power ON button 36b, and a power OFF button 36c.

  The drive device 33 mainly includes a gear box 37, a drive shaft 38, and a motor 39, as shown in the sectional view of FIG. The gear box 37 is a device for rotating the mounting table 31 based on the adjustment value of the speed adjustment dial 36a. The drive shaft 38 is a shaft for transmitting the rotation of the motor 39 to the gear box 37, and is formed in, for example, a metal thin cylindrical shape. The motor 39 is a device for rotating the mounting table 31 by being rotated by a power source (not shown).

  Further, in order to stack the semiconductor wafers 1, for example, a jig 4 as shown in FIGS. 7 to 9 is used. The jig 4 has a flat plate shape as a whole and has a circular cavity in the vertical direction, and is composed of a metal member 41 and a member 42. As shown in FIG. 8, the stacked semiconductor wafers 1 are sandwiched between circular cavities formed by the members 41 and 42. This is performed by tilting the stacked semiconductor wafers 1 so that the semiconductor wafers 1 are fitted into the member 41 so as not to move, and the member 42 is fitted.

  The member 41 is provided with locking members 43, 44, 45 on the circular cavity side so as to contact the semiconductor wafer 1. 9 is a bar-like member having a substantially inverted trapezoidal cross section provided to support the notch 11 of the semiconductor wafer 1. The locking member 43 is provided with a protrusion 43 a in a direction in contact with the semiconductor wafer 1. The protrusion 43a is for locking the notch 11 to prevent the semiconductor wafer 1 from shifting. The locking tools 44 and 45 are for fixing the semiconductor wafer 1 and are members having the same shape as the locking tool 43.

  A locking member 46 is provided on the circular cavity side of the member 42 so as to contact the semiconductor wafer 1. The locking tool 46 is for fixing the semiconductor wafer 1 and is a member having the same shape as the locking tool 43. The protrusions in the locking tools 44, 45, 46 are for supporting the side surfaces of the stacked semiconductor wafers 1. This is because the load on the semiconductor wafer 1 is reduced by supporting the side surface of the semiconductor wafer 1 with dots. The locking tools 43, 44, 45, 46 are made of, for example, polypropylene.

  As described above, according to the manufacturing method of the new semiconductor wafer 12 and the new semiconductor wafers 15 and 16, even if the semiconductor wafer 1 cannot be regenerated as a dummy wafer having a diameter of 300 mm, a new semiconductor wafer having a diameter of 200 mm is obtained. 12 or a new semiconductor wafer 15 or 16 having a diameter of 150 mm can be reused. Further, by applying wax on the surface of the semiconductor wafer 1 and laminating and cutting the semiconductor wafer 1 in the laminating process, 50 semiconductor wafers 1 can be processed together. Furthermore, since the new semiconductor wafers 15 and 16 are ground into a substantially cylindrical shape in the grinding process, it becomes possible to process the semiconductor wafers 15 and 16 into a shape having the orientation flat 17.

  Further, by laminating by applying wax on the surface of the semiconductor wafer 1 in the laminating process, the semiconductor wafer 1 can be firmly fixed, and the shift of the semiconductor wafer 1 during the subsequent cutting process or grinding process can be prevented. it can.

  Furthermore, a new semiconductor wafer 12 having a notch 13 is cut out and generated from the semiconductor wafer 1, so that the new semiconductor wafer 12 smaller than the semiconductor wafer 1 can be made as large as possible, and the crystal orientation can be changed. Allows you to specify. In addition, by setting the notch 11 of the semiconductor wafer 1 as the notch 13 as it is, it is not necessary to form the notch again, so that the labor of processing can be omitted and the notch 11 can be used effectively.

  Furthermore, two new semiconductor wafers 15 and 16 are cut out from one semiconductor wafer 1 so as to be in contact with the orientation flat 17, thereby generating new semiconductor wafers 15 and 16 as much as possible. It is possible to make it large and to specify the crystal orientation.

  In addition, the semiconductor wafer 1 can be prevented from being displaced and stacked by locking and fixing the semiconductor wafer 1 to the protrusion 43 a of the locking tool 43 provided in the jig 4.

  Furthermore, two semiconductor wafers 15 having a diameter of 150 mm can be cut out from the semiconductor wafer 1 having a diameter of 300 mm by cutting new semiconductor wafers 15 and 16 facing each other with the orientation flat 17.

  Although the embodiment of the present invention has been described above, the specific configuration is not limited to the above embodiment, and even if there is a design change or the like without departing from the gist of the present invention, Included in the invention. For example, the semiconductor wafer 1 is a semiconductor wafer having a diameter of 300 mm, but may have other sizes and may have an orientation flat. In addition, the jig 4 used in the stacking process is not limited to the above embodiment, and any jig can be used as long as the semiconductor wafer 1 stacked by locking the notches 11 can be fixed in the same direction. It may be. Further, the shape of the cut pieces 1A, 1B, 1C, and 1D in the cutting process is not limited to the above embodiment, and any shape can be used as long as a new semiconductor wafer 15, 16 can be cut out through the cutting process and the grinding process. Such a process may be used. For example, new semiconductor wafers 15 and 16 may be directly cut out by the band saw 2. Furthermore, the band saw 2 used in the cutting step may use another cutting device such as a laser device.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Band saw 3 Table apparatus 4 Jig 11, 13, 14 Notch 12, 15, 16 New semiconductor wafer 17 Orientation flat 1A, 1B, 1C, 1D Cutting piece 31 Mounting stand 32 Rotating shaft 33 Driving device 34 Fixed stand 35 Cable 36 Control stand 41, 42 Member 43, 44, 45, 46 Locking tool 43a Projection

Claims (15)

A method of manufacturing a regenerated semiconductor wafer for regenerating a substantially disk-shaped semiconductor wafer into a new semiconductor wafer,
A laminating step of laminating and fixing the semiconductor wafer;
A cutting step of cutting the stacked semiconductor wafer substantially perpendicularly to the stacking direction to cut out a new semiconductor wafer;
A method for producing a recycled semiconductor wafer, comprising: Comprising a grinding step of grinding the laminated new semiconductor wafer after the cutting step into a substantially cylindrical shape,
The method for producing a reclaimed semiconductor wafer according to claim 1. In the laminating step, an adhesive is applied and laminated on the surface of the semiconductor wafer or the surface subjected to cleaning, wet etching, or polishing treatment on the semiconductor wafer.
The method for producing a reclaimed semiconductor wafer according to claim 1, wherein the method is a reclaimed semiconductor wafer. The adhesive is a wax that is liquid or solid at room temperature,
The method for producing a reclaimed semiconductor wafer according to claim 3. In the laminating step, the wax is applied in a state where the semiconductor wafer is heated.
The method for producing a reclaimed semiconductor wafer according to claim 4. The semiconductor wafer has a notch that is a notch on the circumference,
The new semiconductor wafer has a notch that is a notch for designating crystal orientation.
6. A method for producing a recycled semiconductor wafer according to claim 1, wherein In the cutting step, the new semiconductor wafer is cut out leaving the notch of the semiconductor wafer.
The method for producing a reclaimed semiconductor wafer according to claim 6. The semiconductor wafer is a semiconductor wafer having a diameter of approximately 300 mm,
The new semiconductor wafer is a semiconductor wafer having a substantially disk shape and a diameter of approximately 200 mm.
The method for producing a recycled semiconductor wafer according to any one of claims 6 and 7, wherein: A plurality of the new semiconductor wafers are generated from one semiconductor wafer.
9. A method for producing a recycled semiconductor wafer according to claim 1, wherein The plurality of new semiconductor wafers are formed in different sizes.
The method for producing a recycled semiconductor wafer according to claim 9. The semiconductor wafer has a notch that is a notch on the circumference,
The new semiconductor wafer has an orientation flat which is a linear portion for designating crystal orientation.
6. A method for producing a recycled semiconductor wafer according to claim 1, wherein Two new semiconductor wafers are generated from one semiconductor wafer facing each other so as to contact the orientation flat.
The method for producing a reclaimed semiconductor wafer according to claim 11. The semiconductor wafer is a semiconductor wafer having a diameter of approximately 300 mm,
The new semiconductor wafer is a semiconductor wafer having a substantially disk shape and a diameter of approximately 150 mm.
The method for producing a recycled semiconductor wafer according to any one of claims 11 and 12, wherein: In the stacking step, a jig provided with a protrusion is used, and the protrusion fixes the semiconductor wafer by supporting a side surface on which the semiconductor wafer is stacked.
The method for producing a recycled semiconductor wafer according to any one of claims 1 to 13, wherein: In the cutting step, the new semiconductor wafer is cut out using a band saw.
15. The method for manufacturing a recycled semiconductor wafer according to claim 1, wherein the method is a manufacturing method of a recycled semiconductor wafer.

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