JP2016146417A - Semiconductor light emission device, distance measurement device using the same and method for operating distance measurement device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emission device that can maintain the distance measurement capability for a remote target in the distance measurement using light while securing safety for human beings, a distance measurement device using the same and a method of operating the distance measurement device.SOLUTION: A semiconductor light emission device 19 comprises a semiconductor light emission element array 15 having plural semiconductor light emission elements 10 arranged along a first direction, and an optical deflector 9 which is provided at a light emission face side of the semiconductor light emission element 10 and deflects light emitted from the semiconductor light emission element 10. The emission light components from the plural semiconductor light emission elements 10 have different deflection angles in the first direction, and the semiconductor light emission elements 10 can be operated to perform light emission with every emission light having each deflection angle.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor light emitting device that is mainly mounted on a vehicle or the like and is used in a distance measuring device that measures a distance to a target object using a laser beam, a distance measuring device using the same, and a driving method of the distance measuring device .

  2. Description of the Related Art In recent years, many vehicles are equipped with sensors that measure the distance from vehicles ahead and obstacles for safe driving of automobiles and the like. Sensors that measure distance include image-based methods (such as stereo cameras), millimeter-wave methods, and laser-based methods, but laser light that has relatively low cost and high resolution. The method using is attracting attention. In the method using laser light, the time for which the light emitted by pulse driving is reflected and returned by the object is measured, and the distance from the time to the object is calculated.

  Conventional distance measuring devices using laser light perform distance measurement by irradiating laser light over a wide range by scanning the laser light using a rotary mirror or the like. On the other hand, if strong laser light enters the eyes of a pedestrian or the like, the retina may be damaged, and safety measures against human irradiation are also required. In Patent Document 1, a laser beam scanning method uses a long-wavelength laser beam that has little adverse effect on human eyes when traveling at a low speed, while a short wavelength that absorbs less water and reaches a long distance when traveling at a high speed. A distance measuring device using the laser beam is disclosed.

  However, the method of scanning with laser light has a problem in terms of improving reliability and downsizing because a movable part for scanning with laser light is required.

JP-A-9-243729

  2. Description of the Related Art In recent years, a surface emitting laser array in which a number of vertical surface emitting lasers (VCSELs) are two-dimensionally arrayed as a high-power laser light source capable of irradiating light over a wide range without scanning with laser light has attracted attention. Has been. However, the emission angle of the vertical surface emitting laser is as narrow as about 20 ° with the direction perpendicular to the emission surface as the center. Therefore, for example, as shown in FIG. 34, a diffusion plate 310 is provided in front of a surface emitting laser array 305 including a substrate 301, an n-side DBR (Distributed Bragg Reflector) 302, an active layer 303, and a p-side DBR 304. It was necessary to disperse the laser light by the diffusion plate 310 and widen the radiation direction of the laser light. In this case, if a person suddenly appears while measuring the distance to the object at a long distance, the intensity of the laser light of the entire surface emitting laser array 305 is lowered in order to avoid adverse effects on the person due to the laser light. It was. Therefore, until the intensity of the laser beam is increased again, the laser beam does not reach a long distance, and there is a problem that distance measurement to a long distance object cannot be performed.

  The present disclosure provides a semiconductor light emitting device for a distance measuring device, a distance measuring device using the same, and a driving method of the distance measuring device that does not reduce the ability to measure the distance to an object at a long distance while ensuring safety. .

  A semiconductor light emitting device according to the present disclosure is provided on a light emitting surface side of a semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction and from the semiconductor light emitting element. A light deflector for deflecting the emitted light, and the light emitted from the plurality of semiconductor light emitting elements has different deflection angles in the first direction, and the semiconductor light emitting elements have the respective deflection angles. It can be driven to emit light for each incident light.

  According to the semiconductor light emitting device according to the present disclosure, the intensity of the emitted light from each semiconductor light emitting element deflected so as to spread with respect to the center of the semiconductor light emitting element array for each emitted light having a respective deflection angle. For people who have entered the vicinity of the semiconductor light-emitting device, the intensity of light toward the person is weakened while the intensity of light that does not pass near the person remains strong. The distance measurement to a long-distance object can be continued. Thereby, the distance measurement capability to a long-distance target object can be maintained, ensuring the safety | security to a person.

  In addition, a distance measurement device according to the present disclosure is provided on a light emitting surface side of a semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction. A light deflecting unit that deflects the emitted light, and the emitted light from the plurality of semiconductor light emitting elements has different deflection angles in the first direction, and the semiconductor light emitting elements have respective deflection angles. A semiconductor light emitting device, a drive unit for driving the semiconductor light emitting element, a light receiving unit for receiving light emitted from the semiconductor light emitting device, and a light emitting unit for emitting light from the semiconductor light emitting device. An arithmetic unit that calculates the distance from the difference between the emission time and the light reception time is provided. Then, when the outgoing light is emitted in the order of the outgoing light having the larger deflection angle and the outgoing light having the smaller deflection angle, the intensity of the outgoing light to be emitted next is determined based on the measurement distance of the outgoing light emitted first. It is characterized by that.

  According to the distance measuring device according to the present disclosure, the outgoing light having a large deflection angle irradiates the intruding target such as a person entering from the end of the measurement area first, and therefore the distance to the intruding target is short. Then, the light emitted thereafter can be immediately reduced. On the other hand, after the irradiation of the intruding target is stopped, the intensity of the light emitted thereafter can be kept strong. Thereby, the distance measurement capability to a long-distance target object can be maintained, ensuring the safety | security to a person.

  The distance measuring device driving method according to the present disclosure includes a semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction, a semiconductor light emitting element provided on a light emitting surface side of the semiconductor light emitting element, A light deflecting unit that deflects light emitted from the light emitting element, and light emitted from the plurality of semiconductor light emitting elements has different deflection angles in the first direction. A semiconductor light emitting device, a drive unit for driving the semiconductor light emitting element, a light receiving unit for receiving the emitted light from the semiconductor light emitting device, and a light emitting unit from the semiconductor light emitting device. In a driving method of a distance measuring device including a calculation unit that calculates a distance from a difference between an emission time and a light reception time of emitted light, the emitted light is emitted in the order of emitted light with a large deflection angle and emitted light with a small deflection angle. The When Ku, based on the distance measured by the outgoing light emitted previously, then characterized to determine the intensity of the outgoing light emitted.

  According to the driving method of the distance measuring device according to the present disclosure, the emitted light having a large deflection angle irradiates the intruding target such as a person entering from the end of the measurement area first, and therefore the distance to the intruding target. Is close, the light emitted thereafter can be immediately reduced. On the other hand, after the irradiation of the intruding target is stopped, the intensity of the light emitted thereafter can be kept strong. Thereby, the distance measurement capability to a long-distance target object can be maintained, ensuring the safety | security to a person.

  In the distance measurement using light by the semiconductor light emitting device according to the present disclosure, the distance measuring device using the semiconductor light emitting device, and the driving method of the distance measuring device, the distance to the object at a long distance is ensured while ensuring safety to the person. The measurement ability can be maintained.

FIG. 1 is a schematic perspective view of the semiconductor light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view taken along line AA in FIG. 3 is a schematic cross-sectional view taken along line BB in FIG. FIG. 4 is a schematic diagram illustrating a configuration of the distance measuring apparatus according to the first embodiment. FIG. 5A is a diagram showing the intensity distribution of the semiconductor light emitting device and the linear phase change of the light deflection unit. FIG. 5B is a diagram illustrating the relationship between the light emission angle of the semiconductor light emitting element and the intensity distribution according to the inclination of the phase change of the light deflection unit. FIG. 6 is a diagram for explaining a change in the light emission angle of the semiconductor light emitting element due to the inclination of the phase change of the light deflector. FIG. 7 is a schematic cross-sectional view showing an optical deflection unit using a lamellar grating type phase change according to the first embodiment. FIG. 8A is a diagram illustrating a lamellar grating type phase change. FIG. 8B is a diagram showing a lamellar grating type phase change of 0.5π rad / μm. FIG. 8C is a diagram showing the relationship between the light emission angle and the intensity distribution in the case of FIG. 8B. FIG. 9A is a diagram showing a lamellar grating type phase change of 1π rad / μm. FIG. 9B is a diagram showing the relationship between the light emission angle and the intensity distribution in the case of FIG. 9A. FIG. 10 is a diagram showing a lamellar grating type phase change of 1π rad / μm when the round-down order is 3. FIG. 11A is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R1 row in FIG. FIG. 11B is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R2 row in FIG. FIG. 11C is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R3 row in FIG. FIG. 12A is a schematic cross-sectional view showing a step of forming a resist in the step of manufacturing the light deflector by the lamellar grating type phase change according to the first embodiment. FIG. 12B is a schematic cross-sectional view showing a step of forming a TiO ₂ layer for the light deflection unit in the step of manufacturing the light deflection unit by the lamellar grating type phase change according to the first embodiment. FIG. 12C is a schematic cross-sectional view showing a step of leaving the TiO ₂ layer only on the VCSEL light emitting surface in the step of manufacturing the light deflector by the lamellar grating type phase change according to the first embodiment. FIG. 12D is a schematic cross-sectional view showing a step of forming a lattice-like resist in the step of manufacturing the optical deflection unit based on the lamellar lattice type phase change according to the first embodiment. FIG. 12E is a schematic cross-sectional view showing the step of removing the resist after processing the TiO ₂ layer in the step of manufacturing the optical deflector by the lamellar grating type phase change according to the first embodiment. FIG. 13 is a schematic cross-sectional view illustrating an optical deflecting unit based on an inclined surface phase change according to a first modification of the first embodiment. 14A is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R1 row in FIG. FIG. 14B is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R2 row in FIG. FIG. 14C is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R3 row in FIG. FIG. 15A is a schematic cross-sectional view showing a step of forming a resist in the step of manufacturing the light deflection section based on the inclined surface phase change according to the first modification. FIG. 15B is a schematic cross-sectional view showing the step of forming the TiO ₂ layer for the optical deflection unit in the step of manufacturing the optical deflection unit based on the inclined surface phase change according to the first modification. FIG. 15C is a schematic cross-sectional view illustrating a process of leaving the TiO ₂ layer only on the VCSEL light emission surface in the process of manufacturing the optical deflection unit based on the change in the inclined plane phase according to the first modification. FIG. 15D is a schematic cross-sectional view showing a step of forming a resist so as to expose only the TiO ₂ layer in the R1 row in the step of manufacturing the optical deflection unit based on the change in the inclined plane phase according to the first modification. FIG. 15E is a schematic cross-sectional view showing the step of tilting the surface of the TiO ₂ layer in the R1 row in the step of manufacturing the light deflecting unit based on the tilted surface phase change according to the first modification. FIG. 15F is a schematic cross-sectional view showing the step of removing the resist in the step of manufacturing the light deflecting unit using the inclined surface phase change according to the first modification. FIG. 16 is a schematic cross-sectional view illustrating an optical deflecting unit based on a step-like phase change according to a second modification of the first embodiment. FIG. 17 is a diagram illustrating a stepped phase change. FIG. 18A is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R1 row in FIG. 18B is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R2 row in FIG. FIG. 18C is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R3 row in FIG. FIG. 19 is a diagram showing a change in the size of the sub-peak with respect to the main peak when the total number of TiO ₂ layers is changed in the R3 row light deflector. FIG. 20A is a schematic cross-sectional view showing a step of forming a resist in the step of manufacturing the light deflector by the stepped phase change according to the second modification. FIG. 20B is a schematic cross-sectional view showing a step of forming the first TiO ₂ layer for the light deflection unit in the step of manufacturing the light deflection unit by the stepwise phase change according to the second modification. FIG. 20C is a schematic cross-sectional view showing a step of leaving the first TiO ₂ layer on the VCSEL light emitting surface in the step of manufacturing the light deflector by the stepped phase change according to the second modification. FIG. 20D is a schematic cross-sectional view showing a step of forming a resist for forming the _second TiO ₂ layer in the step of manufacturing the light deflector by the stepwise phase change according to the second modification. FIG. 20E is a schematic cross-sectional view showing a step of forming the _second TiO ₂ layer for the light deflection unit in the step of manufacturing the light deflection unit by the stepwise phase change according to the second modification. Figure 20F, in the step of manufacturing an optical deflection unit according stepwise phase changes according to the second modification, cross-sectional view schematically showing a step of leaving the second layer TiO ₂ layer of the first layer of the TiO ₂ layer on the It is. FIG. 21 is a schematic cross-sectional view illustrating an optical deflecting unit using a stepped phase change according to a third modification of the first embodiment. FIG. 22A is a schematic cross-sectional view showing a step of forming a contact layer, an AlGaAs layer, and a GaAs layer on the VCSEL laminated film in the step of manufacturing the optical deflector by stepped phase change according to the third modification. FIG. 22B is a schematic cross-sectional view illustrating a process of forming VCSELs corresponding to each column in the process of manufacturing the optical deflector by the stepped phase change according to the third modification. FIG. 22C is a schematic cross-sectional view showing a step of forming a resist in the step of manufacturing the light deflector by the stepped phase change according to the third modification. FIG. 22D is a schematic cross-sectional view showing the step of removing the AlGaAs layer exposed from the resist in the step of manufacturing the light deflector by the stepwise phase change according to the third modification. FIG. 22E is a schematic cross-sectional view showing a step of forming a resist in the step of manufacturing the light deflector by the stepwise phase change according to the third modification. FIG. 22F is a schematic cross-sectional view showing the step of removing the GaAs layer exposed from the resist in the step of manufacturing the light deflector by the stepped phase change according to the third modification. FIG. 23 is a schematic cross-sectional view showing an optical deflection unit using a phase bias-added lamellar grating phase change according to a fourth modification of the first embodiment. FIG. 24A is a diagram showing a phase bias added lamellar grating type phase change. FIG. 24B is a diagram for explaining a phase bias added lamellar grating type phase change. FIG. 25A is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R1 row in FIG. FIG. 25B is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R2 row in FIG. FIG. 25C is a diagram showing the relationship between the light emission angle and the intensity distribution for the light from the R3 row in FIG. It is a figure which shows the layer number dependence of the intensity | strength of the main peak in a light deflection | deviation part by a phase bias addition lamellar grating | lattice type | mold phase change, and a subpeak, and a radiation angle. FIG. 27 is a schematic cross-sectional view of the semiconductor light emitting device according to the second embodiment at a position corresponding to the line BB in FIG. FIG. 28 is a schematic diagram illustrating a configuration of a distance measuring apparatus according to the second embodiment. 29 is a schematic cross-sectional view of the semiconductor light emitting device according to the third embodiment at a position corresponding to the line BB in FIG. FIG. 30 is a schematic diagram illustrating a configuration of a distance measuring device according to the third embodiment. FIG. 31 is a schematic cross-sectional view of the semiconductor light emitting device according to the fourth embodiment at a position corresponding to the line BB in FIG. FIG. 32A is a schematic cross-sectional view at a position corresponding to the line BB of FIG. 1 with respect to the semiconductor light emitting device according to the fifth embodiment before bonding the light deflection unit. 32B is a schematic cross-sectional view of the semiconductor light emitting device according to the fifth embodiment at a position corresponding to the line BB in FIG. FIG. 33A is a schematic cross-sectional view at a position corresponding to the line BB of FIG. 1 with respect to the semiconductor light emitting device according to the sixth embodiment before bonding the light deflection unit. FIG. 33B is a schematic cross-sectional view of the semiconductor light emitting device according to the sixth embodiment at a position corresponding to the line BB in FIG. FIG. 34 is a schematic perspective view of a conventional semiconductor light emitting device.

  Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the present disclosure is not limited to the following embodiment.

(First embodiment)
(Configuration of semiconductor light emitting device)
FIG. 1 is a schematic perspective view of the semiconductor light emitting device according to the first embodiment. 2 is a schematic cross-sectional view taken along line AA in FIG. 1, and FIG. 3 is a schematic cross-sectional view taken along line BB in FIG.

As shown in FIGS. 1, 2, and 3, an n-type Al _x1 Ga _1-x1 As layer and an n-type Al _x2 Ga _1-x2 As layer (x1 ≠ x2) are laminated on a substrate 1 made of GaAs. An n-side DBR (Distributed Bragg Reflector) 2 is formed. On the n-side DBR 2, a plurality of active layers 3 corresponding to the respective vertical surface emitting lasers (hereinafter referred to as VCSELs) 10 are arranged in a plane. The plurality of active layers 3 are arranged in a line in the Y direction in the figure to constitute one line. The rows of the active layers 3 are arranged at equal intervals in the X direction perpendicular to the Y direction. In this embodiment, one row is composed of three active layers 3, and this row is arranged in seven rows along the X direction. Of the seven columns, the column located in the center in the X direction is called the C column, and the right column of the C column is the R1 column, the R2 column, the R3 column, and the left column of the C column in the order from the C column side. These are called L1, L2, and L3 columns in order. The number of active layers 3 and the number of columns in each column can be set as appropriate according to the application.

Each active layer 3 has a quantum well structure in which an InGaAs layer is a well layer and a GaAsP layer is a barrier layer, and the In composition of the InGaAs layer is adjusted so that the oscillation wavelength is about 940 nm. As shown in FIG. 3, on each active layer 3, a p-side DBR 4 in which a p _- type Al _y1 Ga _1-y1 As layer and a p-type Al _y2 Ga _1-y2 As layer (y1 ≠ y2) are stacked. Is formed. A p-type contact layer 5 made of GaAs is formed on the p-side DBR 4. The active layer 3, the p-side DBR 4, and the p-type contact layer 5 are formed in a substantially cylindrical shape.

  An insulating film 6 is formed on the side surfaces of the active layer 3, the p-side DBR 4, and the p-type contact layer 5, and the upper surface of the p-type contact layer 5 is exposed from the insulating film 6. An insulating film 6 is also formed on the upper surface of the n-side DBR 2 exposed from the active layer 3. As the material of the insulating film 6, AlN having a high thermal conductivity is used. As a result, the heat generated from the active layer 3 of each VCSEL 10 diffuses quickly on the substrate 1 and the temperature rise of each VCSEL 10 is suppressed, so that the light emission characteristics of each VCSEL 10 can be stabilized. As a material of the insulating film 6, a material having high thermal conductivity such as diamond or SiC can be used in addition to AlN. An oxidation current confinement layer obtained by oxidizing AlGaAs or AlAs may be provided adjacent to the active layer 3. As a result, the current injected into the active layer 3 is confined near the center, and the threshold value can be lowered.

  As shown in FIG. 3, a p-side electrode 7 made of a transparent electrode is formed on the upper surface of the p-type contact layer 5 and the upper surface of the insulating film 6. The p-side electrode 7 is electrically connected to the p-type contact layer 5 and supplies power to the active layer 3. The p-side electrode 7 is separated for each column. Further, as shown in FIG. 2, the p-type contact layers 5 corresponding to the VCSELs 10 in the same column are electrically connected by a common p-side electrode 7. Thereby, the VCSELs 10 belonging to the same column can be made to emit light simultaneously, and the VCSELs 10 belonging to different columns can be made to emit light individually. For example, the three VCSELs 10 in the R1 column of the present embodiment can emit light at the same time, and can emit light at different timings from the VCSELs 10 in other columns such as the R2 column. Here, since three VCSELs 10 are arranged in each column, it is possible to emit light having an intensity about three times that of one VCSEL 10. Note that the light intensity of each column can be increased by increasing the number of VCSELs 10 belonging to each column.

  In the present embodiment, by using a transparent electrode as the p-side electrode 7, light emitted from the active layer 3 can be extracted to the outside through the p-side electrode 7. Contact can be made. As a material of the p-side electrode 7, ITO (Indium Tin Oxide) is used, but ZnO, graphene, or the like can be used in addition to ITO. Note that, instead of using a transparent electrode as the p-side electrode 7, a metal electrode may be used, and an opening is provided in the metal electrode on the upper surface of the p-type contact layer 5 to extract light from the active layer 3 to the outside. Good.

  Light emitted from each active layer 3 is reflected by the n-side DBR 2 and the p-side DBR 4 disposed above and below to oscillate and is emitted as laser light from the p-side DBR 4 side.

A surface protective film 8 is formed on the p-side electrode 7 and the insulating film 6 exposed from the p-side electrode 7. In the surface protective film 8, an opening 11 is formed in a partial region on the p-side electrode 7 (see FIG. 2). The opening 11 is provided for each p-side electrode 7 corresponding to each column, and is formed in a region other than the region on the active layer 3. As the material of the surface protective film 8, SiO ₂ is used, but Si ₃ N ₄ , AlN, diamond, SiC or the like can be used in addition to SiO ₂ . Here, by using a material having high thermal conductivity as the surface protective film 8, similarly to the above-described insulating film 6, the rise in temperature of each VCSEL 10 is suppressed, so that the light emission characteristics of each VCSEL 10 are stabilized. be able to. A pad electrode 12 is formed on the p-side electrode 7 in the opening 11. As the pad electrode 12, a laminated film of a Ti film and an Au film or the like is used. In the present embodiment, one opening 11 on the p-side electrode 7 in each column is arranged on one side of the VCSEL 10, but one on each side of the VCSEL 10 (two in total). Also good. Thereby, the wiring resistance for supplying electric power to each VCSEL 10 can be reduced.

  An n-side common electrode 13 is formed on the lower surface of the substrate 1 (the surface on which the n-side DBR 2 is not formed). As the n-side common electrode 13, a laminated film of an Au film, a Ge film, and a Ni film is used. By flowing a current between the n-side common electrode 13 and each pad electrode 12, the VCSEL 10 in the column corresponding to each pad electrode 12 can emit light.

  The active layer 3, the p-side DBR 4 and the p-type contact layer 5 separated into a substantially cylindrical shape, and the corresponding substrate 1, n-side DBR 2, insulating film 6, p-side electrode 7 and n-side common electrode 13. The VCSEL 10 is configured by the portion, and the VCSEL array 15 is configured by arranging the VCSELs 10.

  As shown in FIG. 3, an optical deflection unit 9 is formed on the surface protective film 8 corresponding to each VCSEL 10. The light deflecting unit 9 deflects the laser light emitted from each VCSEL 10 in a predetermined direction. As the light deflection unit 9, not only one using a lamellar grating type phase change as in the present embodiment, but also various other configurations can be used. The detailed configuration of these light deflection units 9 will be described later.

  The shape of the light deflection unit 9 is the same in the same column and is different for each column. When the deflection angle of each row is 0 ° in the direction perpendicular to the light exit surface (Z direction), the R1 row, the R2 row, and the R3 row are about + 15 °, about + 30 °, and about + 45 ° in this order, and the L1 row The shape of the light deflection section 9 in each row is set so as to be about −15 °, about −30 °, and about −45 ° in the order of the L2, L3 rows. Here, the direction inclined from the Z direction to the positive X direction is defined as a positive angle, and the direction inclined from the Z direction to the negative X direction is defined as a negative angle (see FIG. 3). In addition, since the light deflection unit 9 is not formed on the surface protective film 8 corresponding to the C row, the light from the VCSEL 10 in the C row is not deflected and is emitted in the Z direction (deflection angle is 0 °). The

  In the present application, the large deflection angle means that the absolute value of the deflection angle with respect to the direction perpendicular to the light exit surface (Z direction) is large irrespective of the above plus and minus angles. To do.

  Here, in the present embodiment, the deflection angles are arranged to be −45 °, −30 °, −15 °, 0 °, + 15 °, + 30 °, and + 45 ° in the order from the L3 row to the R3 row. This is only an example, and in an arbitrary arrangement, for example, in the order of L3 row to R3 row, −45 °, + 45 °, −30 °, + 30 °, −15 °, + 15 °, 0 ° You may arrange.

  Since the light from the VCSELs 10 in each column has a divergence angle of about ± 10 °, the semiconductor light emitting device 19 of this embodiment emits laser light in a range from about −50 ° to about + 50 °. can do.

  As described above, in the semiconductor light emitting device 19 of this embodiment, the VCSELs 10 in the columns corresponding to the emitted light having the respective deflection angles can be individually driven. Thereby, it is possible to emit light by changing the light intensity for each outgoing light having each deflection angle.

In the semiconductor light emitting device 19 of the present embodiment, the n-side common electrode 13 can be mounted on a heat sink or the like via a conductive adhesive layer such as solder. For example, in order to change the emission angle of the laser beam, the semiconductor light emitting device 19 can be easily mounted as compared with the case where each VCSEL is mounted on each surface using a heat sink having a plurality of surfaces having different angles. Therefore, the manufacturing cost can be reduced.
Note that since a step is generated between the VCSELs 10, an electrode or the like may be formed after a planarization film (for example, BCB) is formed between the VCSELs 10.

(Configuration of distance measuring device)
FIG. 4 is a schematic diagram illustrating a configuration of the distance measuring apparatus according to the first embodiment. As shown in FIG. 4, independent drive circuits 20 are connected to the p-side electrodes 7 corresponding to the respective columns of the semiconductor light emitting device 19. All the drive circuits 20 are connected to a control circuit 21 that controls the distance measuring device, and emits a laser beam 31 to a measurement range in each direction in accordance with a command from the control circuit 21. The emitted light is reflected by the object, and the reflected light 32 is received by a TOF (Time of Flight) sensor 22. The TOF sensor 22 is a two-dimensional image sensor that receives light only for a predetermined time determined by the light reception timing signal 23 from the control circuit 21. The signal obtained by the TOF sensor 22 is sent to the distance image calculation circuit 25. Here, from the delay time from the reference timing signal 24 from the control circuit 21, it is calculated as a distance image and displayed on the display 26, and a human (driver or the like) recognizes the measurement object.

  The distance measuring device is driven as follows, for example.

  When nothing is detected in the measurement range (when the reflected light 32 cannot be obtained), the control circuit 21 drives the semiconductor light emitting device 19 in a high output state in order to measure far away. At that time, if a person jumps out from the left, it is recognized even if the laser beam in the left direction is weakened. Therefore, based on the signal 27 from the distance image calculation circuit 25, the control circuit 21 detects the leftmost column (L3 The laser light from the L3 column is weakened through the drive circuit 20 corresponding to the column). Thereby, the laser beam irradiated to the person who jumped out becomes weak, and damage to the human eye by the laser beam can be avoided.

  On the other hand, since the laser beam outputs of the L2 to R3 columns do not change, the distance measurement sensitivity does not change, and distance measurement to a distant object can be continued. When a person approaches the front side of the distance measuring device, the laser light is weakened in the order of the L2 row, the L1 row,. Since these operations are performed by electric control using a CPU or the like without depending on the judgment of the driver, they are processed at a very high speed, and safety problems are reduced.

  Further, in the case of emitting pulses sequentially from the end row of the semiconductor light emitting device (in the order of L3 column, L2 column, L1 column, or in the order of R3 column, R2 column, R1 column), If an intrusion is detected, the intensity of the light in the L2 row may be lowered in advance to reduce damage to the human eye caused by the laser light when a person enters the irradiation range of the L2 row.

  In the above description, the case where the light deflection unit 9 is arranged so that the deflection angle increases in order from the center column to the end column of the VCSEL array 15 has been described. Regardless of the arrangement, the same effect can be obtained by driving the VCSEL 10 so as to emit light in the order of outgoing light having a large deflection angle and outgoing light having a small deflection angle.

  When the driver wants to make the distance image in the specific direction clearer, the laser light in the specific direction (that is, the VCSEL 10 in the specific row) is strengthened by operating the operation lever 28 connected to the control circuit 21. It may be.

(Configuration of light deflection unit)
<Principle>
First, the operation principle of the light deflection unit 9 will be described below.

According to the general diffraction theory, in the light having the near-field image g (x) in the one-dimensional x direction on the light emitting surface, the far-field intensity I (θ) at the angle θ is

I (θ) = ∫g (x) exp [−i × 2πsin θ × (x / λ)] dx (1)

Given in. Here, i is an imaginary unit, and λ is the wavelength of light. Further, the integration range in the equation (1) is from −∞ to + ∞. The far field intensity I (θ) of light having the same distribution as this far field intensity and deflected in the direction rotated by the angle θ _c is

I (θ) = ∫g (x) exp {−i × [2πsin (θ−θ _c ) × (x / λ)]}} dx
... (2)

It is.
here,

sin (θ−θ _c ) = [sin (θ−θ _c ) −sin θ] + sin θ
= −2sin (θ _c / 2) cos (θ−θ _c / 2) + sin θ (3)

Equation (2) is

I (θ) =
∫g (x) exp {i × 2π [sin (θ _c / 2) cos (θ−θ _c / 2)] × (x / λ)}
× exp [−i × 2πsin θ × (x / λ)] dx (4)

It becomes. Here, if I (θ) is gathered in the vicinity of θ = θ _c , θ−θ _c / 2≈θ _c / 2, and

sin (θ _c / 2) cos (θ−θ _c / 2) ≈2 sin (θ _c / 2) cos (θ _c / 2)
= Sin θ _c (5)

Therefore, equation (4) becomes

I (θ) =
∫g (x) exp [i × 2πsin θ _c × (x / λ)]
× exp [−i × 2πsin θ × (x / λ)] dx (6)

It becomes.

That is, a phase change having a phase gradient α = 2π sin θ _c with respect to a coordinate X = x / λ normalized by the wavelength λ (in other words, a phase change having a phase gradient β = 2π sin θ _c / λ with respect to the coordinate x). Is given to the near-field image g (x) of incident light, the far-field image is deflected in a direction rotated by the angle θ _c of the original far-field image.

5A and 5B show specific calculation examples. As shown in FIG. 5A, light resonates in the VCSEL 10 and is emitted to the outside (wavelength λ = 0.94 μm. The electric field has a Gaussian distribution, and g (x) = exp [− (x / 2) ² ] ( The unit of x is μm).), and a linear phase change given by phase change Φ (x) = βx is given. FIG. 5B shows the relationship between the light emission angle and the radiation intensity when 0, 0.5π, 1π, 1.5π, and 2π rad / μm are given as the inclination β.

The light intensity distribution from β = 0 rad / μm to β = 1.5π rad / μm has a peak intensity at an angle larger than 0, and an almost unimodal distribution is obtained, and good deflection characteristics are obtained. ing. However, the unimodality is lost when β = 2πrad / μm is increased. This is because the radiation direction can take two values, θ1 = θ and θ2 = π−θ, for one β, but as θ increases, the component of θ2 appears at an angle of −90 ° to + 90 °. . The angles giving the peak intensities for the slopes 0, 0.5π, 1π, 1.5π, and 2πrad / μm are 0 °, 13 °, 27 °, 44 °, and 67 °, and are calculated backward from β = 2πsinθ _c / λ. Θ _c = 0 °, 13.6 °, 28.0 °, 44.8 °, and 70.1 ° obtained in this manner. That is, it is understood that the deflection is about 15 degrees per 0.5π rad / μm.

Accordingly, as shown in FIG. 6, the phase modulation region is provided on the exit surface of the VCSEL 10, where if you give a linear phase shift Φ (x) = βx (β = 2πsinθ c / λ), deflects the light in the theta _c direction It becomes possible to do. This phase modulation region corresponds to the light deflection unit 9 of the present application.

  Hereinafter, a more specific configuration of the light deflection unit 9 will be described.

<Optical deflection unit by lamellar grating type phase change>
FIG. 7 is a schematic cross-sectional view showing the light deflection units in the right three columns (R1, R2, and R3) of the present embodiment. Each VCSEL 10 has a diameter of 12 μm. The near-field image of each VCSEL 10 has a substantially Gaussian distribution (distance of 1 / e is 2 μm from the center). On the light emitting surface of the VCSEL 10 in the R1, R2, and R3 columns, light deflecting units 101, 102, and 103 having a lamellar grating type phase change are formed, respectively. The lamellar grating type phase change is formed within a range of ± 3 μm from the center of the light deflection unit, and has a slit shape.

  First, the principle of optical deflection by phase change by a lamellar grating will be described.

FIG. 8A is a diagram illustrating a lamellar grating type phase change. The lamellar grating type phase change is a phase change given in binary. As shown in FIG. 8A, if a desired linear phase change is divided by an interval of width w and the average phase of the j-th divided section is Φ _j , the width u _j = (Φ _j / By making the range of Φ _m ) w the phase Φ _m and the range of the width w−u _{j being} the phase zero, binarization approximation can be performed. Here, Φ _m is the maximum phase given by the lamellar grating and is common in each section. Further, since the phase Φ + 2πk (k is an integer, here referred to as a “round-down order”) is equivalent to the phase Φ, the linear phase change can be rounded down every 2πk. By setting Φ _m = 2πk, a continuous phase change can be obtained in each divided section.

FIG. 8B shows a lamellar grating type phase change with β = 0.5π rad / μm together with the incident light distribution. Φ _m = 2π (k = 1). In one section, w = 0.5 μm, and for each section, the average phase of the section increases by 0.25π. That is, for each section of Φ _j = 0, 0.25π, 0.5π, 0.75π, 1π, 1.25π, 1.5π, 1.75π rad, u _j = 0, 0.0625, 0, respectively. The range of .125, 0.1875, 0.25, 0.3125, 0.375, 0.4375 μm is Φ _m . Φ _j = 2π, since the same phase of the Φ _j = 0, is the devaluation and Φ _j = 0. FIG. 8B also shows an effective phase change that light senses with this lamellar grating. The effective phase change gradient is β = 0.5π rad / μm on average although there are minute irregularities. FIG. 8C shows the relationship between the light emission angle by this lamellar grating and the intensity distribution. Unimodal radiation is emitted in the direction of about 13 °, and desired characteristics are obtained.

On the other hand, FIG. 9A shows a lamellar grating type phase change with β = 1π rad / μm, together with an incident light distribution. Φ _m = 2π (k = 1). In addition, the effective phase change which light senses with this lamellar grating is also shown in FIG. 8B. FIG. 9B shows the relationship between the light emission angle and the intensity distribution by the lamellar grating. As shown in FIG. 9B, in addition to the intensity peak near 28 °, unnecessary intensity peaks exist near 0 ° and −30 °. As shown in FIG. 9A, when the phase change slope β increases, the effective phase change has a negative slope at the boundary where the phase change changes from the phase 2πj to the phase 2π (j + 1). Since the emitted light has a distribution in the x direction, a part of the light passes through this boundary portion. For this reason, the light transmitted through this boundary portion is deflected in a direction different from the phase 2πj and the phase 2π (j + 1). The influence of this boundary portion hardly changes even if the position of the lamellar lattice is shifted left and right. The intensity peak in the unnecessary direction becomes radiation of light in an undesired direction, causing a problem in safety and the like.

For this reason, in the lamellar grating in the present embodiment, the cut-off order k is increased so that the light does not pass through the above-described boundary portions, and the interval between the boundary portions is increased. Specifically, the devaluation order k is set to 3. FIG. 10 shows a lamellar lattice type phase change and an effective phase change with β = 1π rad / μm when k = 3 (rounded down every 6π) and Φ _m = 6π, together with the incident light distribution. As shown in FIG. 10, the effective phase change interval is widened, and the light is less susceptible to the influence of the boundary portion.

Specifically, the width of each phase rectangle in the lamellar gratings in the R1, R2, and R3 columns in FIG. 7 is such that the slope of the effective linear phase change is β = 0.5π, 1π,. It was set to 5πrad / μm. The light deflection units 101, 102, and 103 are made of TiO ₂ , and the thickness t is set to t = (Φm / 2π) × (λ / n) = 1170 nm (n is TiO ₂ ). Refractive index (refractive index n at wavelength λ = 940 nm is 2.42). The light emitted from the R1, R2, and R3 columns has deflection angles θ1, θ2, and θ3 corresponding to β = 0.5π, 1π, and 1.5πrad / μm, respectively.

  FIG. 11A, FIG. 11B, and FIG. 11C show the relationship between the light emission angle and the intensity distribution for the light from the R1, R2, and R3 columns, respectively. As shown in FIGS. 11A, 11B, and 11C, a substantially unimodal distribution having a peak intensity at a desired angle is obtained. Note that at β = 1.5π rad / μm, the half-value width is slightly widened, but an intensity peak in an unnecessary direction is hardly seen.

  As described above, good radiation characteristics could be obtained despite the linear phase change only in the range of ± 3 μm from the center of the light deflection section.

  Next, a method for manufacturing the light deflection units 101, 102, and 103 according to this embodiment will be described with reference to FIGS. 12A to 12E.

First, the photoresist 104 is formed on the entire surface between the VCSEL 10 and the VCSEL 10 in the R1, R2, and R3 rows, and only the photoresist 104 on the light emitting surface of the VCSEL 10 is removed to form the opening 105 (FIG. 12A). reference). Next, as shown in FIG. 12B, a TiO ₂ layer 106 is formed on the light emitting surface of the VCSEL 10 and on the photoresist 104 using a sputtering apparatus. Thereafter, the TiO ₂ layer 166 on the photoresist 104 is removed by a lift-off method, thereby leaving the TiO ₂ layer 106 only on the light emitting surface of the VCSEL 10 (see FIG. 12C). Subsequently, after a photoresist 107 is formed again on the entire surface between the VCSEL 10 and the VCSEL 10, lattice-shaped openings 108, 109, and 110 are formed by photolithography (see FIG. 12D). Finally, using an ICP (Inductive Coupled Plasma) etching apparatus, after etching the TiO ₂ film exposed from the openings 108, 109, and 110, the photoresist 107 is removed, whereby the light deflecting portions 101, 102, and 103 are formed. Form (see FIG. 12E).

  The light deflection units 101, 102, and 103 using the lamellar grating type phase change according to the present embodiment do not need to be stacked with a large number of layers, and can be formed only by finely processing one layer by photolithography or the like. Can be simplified.

  In the above-described embodiment, a lamellar grating is used as the light deflection units 101, 102, and 103. However, other configurations may be used as long as they give a phase change to light. Another configuration example of the light deflection units 101, 102, and 103 will be described below as a modification.

(First modification)
<Optical deflector by tilted phase change>
FIG. 13 is a schematic cross-sectional view showing the light deflection units in the right three rows (R1, R2, and R3 rows) in the first modification of the first embodiment. Each VCSEL 10 has a diameter of 10 μm. On the light output surfaces of the VCSELs 10 in the R1, R2, and R3 columns, light deflection units 111, 112, and 113 are formed by changing the tilted surface phase. The material of the light deflection unit is TiO ₂ . The surfaces of the light deflectors 111, 112, and 113 are inclined, and the thickness thereof changes linearly in a certain direction.

Assuming that the maximum thicknesses of the light deflectors 111, 112, and 113 in the R1, R2, and R3 rows are d _m and the minimum thicknesses are d1, d2, and d3, respectively, the light deflectors 111, 112, and 113 in each column The slope of the phase change is β = 2π [(d _m −dj) / w _d ] / (λ / n) (j is one of 1, 2, and 3; w _d is the whole of the light deflection unit. width.). d _m = 2.91 μm, and d1 so that the slopes of the phase changes of the optical deflectors 111, 112, 113 in the R1, R2, and R3 columns are β≈0.5π, 1π, and 1.5πrad / μm. , D2, and d3 are set to d1 = 1.94, d2 = 0.97, and d3 = 0 μm, respectively. Due to this linear phase change, the radiated light from the VCSEL 10 is deflected in the directions of θ1, θ2, and θ3 obtained by back-calculating β = 2πsin θ _c / λ.

  FIGS. 14A, 14B, and 14C show the relationship between the light emission angle and the intensity distribution for the light from the R1, R2, and R3 columns, respectively. As shown in FIGS. 14A, 14B, and 14C, the emitted light from the R1, R2, and R3 rows is deflected in directions of θ1 = 13 °, θ2 = 27 °, and θ3 = 44 °, respectively. The full width at half maximum (FWHM) of the light intensity distribution in FIGS. 14A, 14B, and 14C is 10.5 °, 11 °, and 14 ° (10 ° when there is no light deflector), respectively. The larger the is, the wider the far field.

  Next, a method for manufacturing the light deflection units 111, 112, and 113 according to this modification will be described with reference to FIGS. 15A to 15F.

First, a photoresist 117 is formed on the entire surface between the VCSEL 10 and the VCSEL 10 in the R1, R2, and R3 rows, and only the photoresist 117 on the light emitting surface of the VCSEL 10 is removed to form an opening 118 (FIG. 15A). reference). Next, as shown in FIG. 15B, a TiO ₂ layer 119 is formed on the light emitting surface of the VCSEL 10 and on the photoresist 117 using a sputtering apparatus. Thereafter, the TiO ₂ layer 119 on the photoresist 117 is removed by a lift-off method to leave the TiO ₂ layer 119 only on the light emitting surface of the VCSEL 10 (see FIG. 15C). Subsequently, as shown in FIG. 15D, a resist 121 and a Ni film 122 are formed on the entire surface between the VCSEL 10 and the VCSEL 10, and an opening 123 is formed on the TiO ₂ layer 119 in a predetermined row (R1 row) by photolithography. To do. Next, using an ICP etching apparatus, etching plasma 124 is irradiated from an oblique direction using the Ni film as a mask, and etching is performed so that the upper surface of the TiO ₂ layer 119 exposed through the opening 123 is inclined (see FIG. 15E). . Etching by the ICP etching apparatus has high straightness, and an inclined surface can be formed on the upper surface of the TiO ₂ layer 119. By this etching angle, the inclination angle of the TiO ₂ layer 119, that is, the inclination of the linear phase change can be determined. Next, by using the lift-off method, the resist 121 and the Ni film 122 are removed, thereby forming the optical deflection unit 111 for the R1 column VCSEL (see FIG. 15F). By performing this process for the VCSELs 10 in other columns, it is possible to form the light deflection units on all the VCSELs 10.

(Second modification)
<Optical deflection part by stepped phase change>
FIG. 16 is a schematic cross-sectional view showing the light deflection units in the right three rows (R1, R2, and R3 rows) in the second modification of the present embodiment. Each VCSEL 10 has a diameter of 12 μm. On the light emitting surfaces of the VCSELs 10 in the R1, R2, and R3 rows, light deflection units 131, 132, and 133 are formed by stepped phase changes, respectively.

As shown in FIG. 17, the step-type phase change approximates a linear phase change by changing the film thickness of the light deflection units 131, 132, and 133 in a step shape. Assuming that the width of each stair is wj (j is one of 1, 2, 3) and the phase change per step is Φ _s , the average slope when approximated linearly is β = Φ _s / wj. By making Φ _s constant and changing wj, the phase change β can be arbitrarily set.

As shown in FIG. 16, in the present modification, the R1, R2, and R3 rows are each composed of seven TiO ₂ layers, and the thickness t of each layer is the phase change per layer as Φ _s. T = (Φ _s / 2π) × (λ / n) = 146 nm (n is the refractive index of TiO ₂ ). The total film thickness of the light deflection units 131, 132, and 133 is 1022 nm. By setting the widths of the staircases of the optical deflectors 131, 132, 133 in the R1, R2, and R3 rows to w1 = 1.5 μm, w2 = 0.75 μm, and w3 = 0.5 μm, respectively, an effective straight line The slopes of the phase changes are β = 0.5π, 1π, and 1.5πrad / μm, respectively.

  18A, 18B, and 18C show the relationship between the light emission angle and the intensity distribution for the light from the R1, R2, and R3 columns, respectively. The deflection angles of the R1 row, the R2 row, and the R3 row are θ1 = 13 °, θ2 = 27 °, and θ3 = 42 °, respectively.

  Note that, in the light deflecting units 131, 132, and 133 using the staircase type phase change, the stair width wj needs to be increased as the radiation direction is closer to the light exit surface (the radiation angle is closer to zero). . When the width wj of the staircase is longer than the wavelength, the light passing through the flat portion of the staircase becomes difficult to perceive the “stepwise phase change”. For this reason, as shown in FIG. 18A, when β = 0.5π rad / μm, the width of the staircase is 1.5 μm, which is large with respect to the wavelength. A sub-peak has occurred.

Further, as shown in FIG. 18C, a small sub-peak appears at −10 to + 20 °. This is due to the fact that there are only seven TiO ₂ layers in total and the outside of the stepped region of the seven layers is flat. FIG. 19 shows the change in the intensity of the sub-peak with respect to the main peak when the total number of TiO ₂ layers is changed in the R3 column optical deflection section (which is most susceptible to the layer number limitation). As shown in FIG. 19, when the total number of layers is as small as about 4, the sub-peak intensity becomes strong and unnecessary radiation is generated. For this reason, in order to make a subpeak 1/10 or less of a main peak, it is desirable to accumulate seven or more layers.

  Next, a method for manufacturing the light deflection units 131, 132, and 133 according to this modification will be described with reference to FIGS. 20A to 20F.

First, as shown in FIG. 20A, a photoresist 134 is formed on the entire surface between the VCSEL 10 and the VCSEL 10 in the R1, R2, and R3 rows, and an opening 135 is formed on the light emitting surface of the VCSEL 10 using photolithography. To do. At this time, the opening widths of the R1, R2, and R3 rows are Z1 (1), Z2 (1), and Z3 (1). Here, it is assumed that Z1 (1)> Z2 (1)> Z3 (1). Next, a TiO ₂ layer 136 is formed with a thickness of 146 nm on the light emitting surface of the VCSEL 10 and the photoresist 134 using a sputtering apparatus (see FIG. 20B). Thereafter, the TiO ₂ layer 136 on the resist 134 is removed by a lift-off method to leave the TiO ₂ layer 136 having a different width for each column only on the light emitting surface of the VCSEL 10 (see FIG. 20C). The TiO ₂ layer 136 is the first layer of the TiO ₂ layer 136 of the light deflection unit. Further, a photoresist 138 is formed again on the entire surface between the VCSEL 10 and the VCSEL 10, and an opening 139 is formed on the TiO ₂ layer 136 formed on the light emitting surface of each VCSEL 10. At this time, the opening widths of the R1, R2, and R3 rows are Z1 (2), Z2 (2), and Z3 (2). Here, Z1 (1) −Z1 (2) = 1.5 μm, Z2 (1) −Z2 (2) = 0.75 μm, and Z3 (1) −Z3 (2) = 0.5 μm are set. Next, a 146 nm thick TiO ₂ layer 140 is formed on the light emitting surface of the VCSEL 10 and on the photoresist 138 with a sputtering apparatus (see FIG. 20E), and then the TiO ₂ layer 140 on the resist 138 is removed by a lift-off method. As a result, the second TiO ₂ layer 140 of the light deflection unit is formed on the light emission surface of the VCSEL 10 in each column (see FIG. 20F). The same process is repeated to form TiO ₂ layers from the third layer to the seventh layer. At this time, the opening widths of the R1 row, the R2 row, and the R3 row are formed to be smaller than the opening width of the previous layer by 1.5 μm, 0.75 μm, and 0.5 μm, respectively. As a result, the gradient of the average phase change in the R1, R2, and R3 columns is β = 0.5π, 1π, and 1.5π rad / μm.

  The light deflection units 131, 132, and 133 using the staircase type phase change according to this modification do not require submicron fine processing as compared with the lamellar lattice type, and thus do not require an expensive processing device and are manufactured. Cost can be reduced.

(Third Modification)
<Optical deflection part by stepped phase change>
FIG. 21 is a schematic cross-sectional view showing the light deflection units in the right three rows (R1, R2, and R3 rows) in the third modification of the first embodiment. Each VCSEL 10 has a diameter of 14 μm, of which 12 μm is used as a light-emitting portion, and 2 μm of residue (periphery 1 μm, not shown) is used for contact with the p-side electrode. In this modification, no light deflection unit is formed on the surface protective film 8, and the staircases are continuously formed on the GaAs contact layers 154, 155, and 156 on the surface of the VCSEL 10 in the R1, R2, and R3 columns. Optical deflectors 151, 152, and 153 having a mold phase change (Φ _s = 0.75π) are formed. In each of the R1, R2, and R3 rows, the light deflection unit is configured such that four AlGaAs layers (Al: 15%) 157 and three GaAs layers 158 are alternately stacked, and the thickness t of each layer is For the phase Φ _s , t = (Φ _s / 2π) × (λ / n) is set (n is the refractive index). Specifically, since the refractive indexes of AlGaAs and GaAs at 940 nm are 3.46 and 3.55, the thicknesses are 102 nm and 99 nm, respectively. The total film thickness of the light deflectors 151, 152, and 153 is 705 nm. Etching is performed stepwise using a selective etching solution such as citric acid. The width of the stairs is 1.5 μm, 0.75 μm, and 0.5 μm in the R1, R2, and R3 columns, respectively.

  The radiation characteristics of the R1, R2, and R3 rows in this modification are substantially the same as those in the second modification described above.

  Next, a method for manufacturing the light deflection units 151, 152, and 153 of this modification will be described with reference to FIGS. 22A to 22F.

  First, as shown in FIG. 22A, a crystal growth layer in which four AlGaAs layers (Al: 15%) 157 and three GaAs layers 158 are alternately stacked on the contact layer 160 formed on the VCSEL stacked film. 161 is formed. Next, after etching to separate each VCSEL 10 (see FIG. 22B), a photoresist 162 is applied to the entire surface between the VCSEL 10 and the VCSEL 10 in the R1, R2, and R3 rows, and an opening 163 is formed by photolithography. (See FIG. 22C). At this time, the opening widths of the R1, R2, and R3 rows are Z1 (1), Z2 (1), and Z3 (1). Here, it is assumed that Z1 (1)> Z2 (1)> Z3 (1). Next, the exposed AlGaAs layer 157 is selectively etched using a citric acid-based etchant (see FIG. 22D). As a result, a seventh layer is formed. Further, after removing the photoresist 162, another photoresist 164 is formed again on the entire surface between the VCSEL 10 and the VCSEL 10, and an opening 165 is formed by photolithography (see FIG. 22E). At this time, the opening widths of the R1, R2, and R3 rows are Z1 (2), Z2 (2), and Z3 (2). Here, Z1 (1) −Z1 (2) = 1.5 μm, Z2 (1) −Z2 (2) = 0.75 μm, and Z3 (1) −Z3 (2) = 0.5 μm are set. Next, the exposed GaAs layer 158 is selectively etched using an ammonia / hydrogen peroxide etchant (see FIG. 22F). As a result, a sixth layer is formed. The same process is repeated to sequentially form the fifth layer to the first layer. At this time, the opening widths of the R1 row, the R2 row, and the R3 row are formed to be smaller than the opening width of the previous layer by 1.5 μm, 0.75 μm, and 0.5 μm, respectively. As a result, the gradient of the average phase change in the R1, R2, and R3 columns is β = 0.5π, 1π, and 1.5π rad / μm.

  Since the light deflectors 151, 152, and 153 due to the stepped phase change according to this modification can emit light without passing through the surface protective film 8, loss due to reflection at the interface between the VCSEL 10 and the surface protective film 8 is reduced. can do.

(Fourth modification)
<Optical deflection unit with phase bias added lamellar grating type phase change>
FIG. 23 is a schematic cross-sectional view showing the light deflection units in the right three rows (R1, R2, and R3 rows) in the fourth modification example of the first embodiment. Each VCSEL 10 has a diameter of 12 μm. On the light emitting surface of the VCSEL 10 in the R1, R2, and R3 columns, light deflecting units 181, 182, and 183 having phase bias added lamellar grating type phase change are formed, respectively.

The phase bias-added lamellar grating type phase change is a combination of the lamellar grating type phase change and the step type phase change described above. As shown in FIG. ) Gives a constant phase value Φ _p . Thereby, generation | occurrence | production of the effective phase change which has the negative inclination which was a subject in the above-mentioned lamellar lattice type phase change can be suppressed. In the case of the lamellar grating type phase change, the phase change every 2π is considered to be equivalent and rounded down. However, the phase bias added lamellar grid type phase change is applied as a phase bias of 2π without being rounded down every 2π. That is, in the lamellar grating type phase change, a layer having a thickness having a phase change of 2π is added for every phase change of 2π so that the phase can be changed continuously. As a result, a negative gradient does not appear in the effective phase change, and the emission of light deflected in a direction other than the predetermined direction is suppressed.

The design of the optical deflecting units 181, 182, and 183 using the phase bias added lamellar grating type phase change will be described below. As shown in FIG. 24B, the desired average phase change is sπ (rad / μm), the binarization interval of the lamellar grating part is w (μm), and the binarization intervals w are collected into one group, Given a phase bias Φ _p = γπ (rad), in order for the average phase change to be continuous at the group interface,

sπ = γπ / (wN) (7)

Is necessary. Here, as will be described later, γ is often determined by the film thickness of the layer that provides the phase bias Φ _{p formed} on the light emitting surface, and is often constant between adjacent VCSELs 10. Therefore, in order to change s between adjacent VCSELs 10 (that is, to change the radiation direction), the radiation direction can be controlled only by changing w and N. Note that the phase bias Φ _p need not be an integer multiple of 2π. For example, for Φ _p = 1.8π (γ = 1.8), (s, w, N) = (0.5, 0.4, 9), (0.9, 0.4, 5) , (1.5, 0.4, 3) can be considered as a combination in three directions.

In this modification, the optical deflection units 181, 182, and 183 in the R1 column, R2 column, and R3 column are set to phase bias Φ _p = 1.8π (γ = 1.8), and (s, w, N) = It was formed to be (0.5, 0.4, 9), (0.9, 0.4, 5), (1.5, 0.4, 3). Specifically, each of the light deflectors 181, 182, 183 is formed of four TiO ₂ layers, each layer has a thickness of 351 nm, and the total thickness of each of the light deflectors 181, 182, 183 is 1404 nm. Also, lamellar lattices corresponding to w and N determined as described above are formed in each layer of the R1, R2, and R3 columns. For example, in the case of the R1 column, 9 binarization intervals w = 0.4 μm are arranged, and each binarization is performed so that the phase continuously changes from 0 to Φ _p in order from the binarization interval w at the end. The width of the convex portion giving the phase of Φ _p within the interval w is changed.

  FIG. 25A, FIG. 25B, and FIG. 25C show the relationship between the light emission angle and the intensity distribution for the light from the R1, R2, and R3 columns, respectively. The deflection angles of the R1, R2, and R3 rows are θ1 = 13 °, θ2 = 25 °, and θ3 = 44 °, respectively, and good unimodal deflection characteristics are obtained.

FIG. 26 shows the layer number dependence of the intensity and radiation angle of the main peak and sub peak. Here, the phase bias Φ _p is 1.8π, and the gradient of the phase change is 1.5π rad / μm. As shown in FIG. 26, the number of layers to which the phase bias Φ _p is applied is four or more, the sub-peak intensity is almost zero, and unnecessary light emission in directions other than the predetermined direction is suppressed. It can also be seen that the main peak has a sufficiently large deflection angle.

  The manufacturing method of the optical deflecting units 181, 182, and 183 according to this modification can be realized by combining the above-described manufacturing method of the optical deflecting unit of the staircase type phase change and the lamellar type phase change.

  In the light deflecting units 181, 182, and 183 according to the present modification, a negative linear phase tilt as in the case of the lamellar phase change does not occur, so that light emission in an unnecessary direction can be suppressed. Moreover, since there are few flat parts compared with the optical deflection part of a staircase type phase change, it is possible to suppress light radiation in an unnecessary direction at a small radiation angle.

(Second Embodiment)
(Configuration of semiconductor light emitting device)
FIG. 27 is a schematic cross-sectional view of the semiconductor light emitting device according to the second embodiment at a position corresponding to the line BB in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the present embodiment, the L3 ′ row and the R3 ′ row, which are both ends of the semiconductor light emitting device 41, are used as light receiving elements instead of light emitting elements. The element structures of the light receiving elements 14 in the L3 ′ column and the R3 ′ column are the same as the element structures of the VCSELs 10 in the other columns. The L3′-row light deflecting section 9 and the L2-row light deflecting section 9, and the R3′-row light deflecting section 9 and the R2-row light deflecting section 9 have the same configuration. About another structure, it is the same as that of 1st Embodiment.

  As described above, the light receiving elements 14 in the L3 ′ and R3 ′ rows at both ends have the same configuration as the VCSELs 10 in the L2 and R2 rows arranged adjacent to the light receiving elements 14, thereby emitting light from the VCSELs 10 in the L2 and R2 rows. The DBR resonant mirrors of the light receiving elements 14 in the L3 ′ row and the R3 ′ row resonate with respect to the wavelength of the light, thereby improving the sensitivity. Thereby, the S / N ratio with respect to the reflected light of the light emitted from the VCSEL 10 in the L2 row and the R2 row is improved. Further, the L2 'and R2's rows of light deflecting sections 9 at the opposite ends and the L2 and R2 rows of light deflecting sections 9 arranged adjacent to each other have the same configuration. The sensitivity to the reflected light from the same angle as the outgoing angle of the outgoing light from is improved.

  As described above, the semiconductor light emitting device 41 of the present embodiment includes the light receiving elements 14 that can be selectively detected with high sensitivity with respect to the light emitted from the VCSELs 10 in the immediately inner rows at both ends. ing.

  In the present embodiment, the light receiving elements 14 are arranged at both ends. However, this is not essential and may be arranged at an arbitrary position.

  In the above-described configuration, the same configuration as that of the VCSEL 10 is used for the light receiving elements 14 at both ends. However, unlike the VCSEL 10, a light receiving device 14 having an optimum element structure may be used.

(Configuration of distance measuring device)
FIG. 28 is a schematic diagram illustrating a configuration of a distance measuring apparatus according to the second embodiment. As shown in FIG. 28, the light receiving elements 14 in the L3 ′ row and the R3 ′ row at both ends of the semiconductor light emitting device 41 are connected to the light receiving circuit 42, respectively. On the other hand, the VCSELs 10 in the L2, L1, C, R1, and R2 columns of the semiconductor light emitting device 41 are driven by independent drive circuits 20, respectively, and these drive circuits 20 are all connected to the control circuit 21. . The control signals 47 and 48 are transmitted from the light receiving circuit 42 in the L3 ′ row and the light receiving circuit 42 in the R3 ′ row to the driving circuit 20 in the adjacent L2 row and the driving circuit 20 in the R2 row, respectively. Also, the proximity notice signals 49 and 50 are transmitted respectively. About another structure, it is the same as that of 1st Embodiment.

  The outgoing light 43 from the semiconductor light emitting device 41 is reflected by the object to become reflected light 44 and received by the TOF sensor 22. The signal obtained by the TOF sensor 22 is sent to the distance image calculation circuit 25, processed, and displayed on the display 26. On the other hand, the light receiving elements 14 in the L3 ′ and R3 ′ rows located at both ends of the semiconductor light emitting device 41 mainly receive the reflected lights 45 and 46 from the emission direction of the VCSEL 10 in the L2 and R2 rows, respectively.

  The closer the object is, the stronger the intensity of the reflected light. Therefore, the light receiving circuit 42 in the L3 ′ row or the light receiving circuit 42 in the R3 ′ row has an intensity of a certain threshold value or more from the light receiving elements 14 in the L3 ′ row or R3 ′ row. When the received light signal is obtained, it is determined that “a proximity person is present at the end” (or “a proximity person has entered from the end”). The light receiving circuit 42 in the L3 ′ row or the light receiving circuit 42 in the R3 ′ row directly sends control signals 47 and 48 to the drive circuit 20 of the VCSEL 10 in the L2 row and the drive circuit 20 of the VCSEL 10 in the R2 row, respectively. The output light intensity of the VCSEL 10 in the R2 row is weakened. Thereby, only the optical output of the outermost VCSEL 10 of the semiconductor light emitting device 41 can be quickly reduced.

  When the light receiving circuit 42 in the L3 ′ row or the light receiving circuit 42 in the R3 ′ row obtains a light receiving signal having an intensity equal to or greater than a certain threshold value, the proximity notice signal 49 is sent to the control circuit 21 together with the control signals 47 and 48. , 50 is sent. Accordingly, since the control circuit 21 can quickly know the presence of the neighbor, for example, the drive circuit 20 of the VCSEL 10 in the L1 column or the VCSEL 10 in the R1 column so as to reduce the light intensity of the VCSEL 10 in the L1 column or the R1 column. It is also possible to transmit a control signal to the drive circuit 20.

  As described above, in the distance measuring device according to the present embodiment, without passing through the TOF sensor 22 and the distance image calculation circuit 25, the proximity person entering from the end of the detection area is quickly detected, and the laser beam directed toward the proximity person is detected. The strength can be lowered. For example, when trying to increase the resolution of the distance measurement image, the distance image calculation time becomes long, and the distance measurement device of the first embodiment has a poor response to the intruder of the near person. On the other hand, in the distance measuring device of the present embodiment, even when the resolution of the distance measurement image is increased, the control signal is directly output from the light receiving element, so that it is possible to quickly cope with the intrusion of the neighbor. Thereby, the safety | security to the person with respect to the laser beam from a distance measuring device can further be improved.

(Third embodiment)
(Configuration of semiconductor light emitting device)
FIG. 29 is a schematic cross-sectional view of the semiconductor light emitting device according to the third embodiment at a position corresponding to the line BB in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  This embodiment is different from the second embodiment in that the material of the active layer 17 in the L3 ″ column and the L2 ″ column and the R2 ″ column and the R3 ″ column which are two columns from the end of the semiconductor light emitting device 51 is InGaNAs. Different. When InGaNAs is used for the active layer 17, the emission wavelength (light receiving wavelength) is about 1400 nm. In general, light having a wavelength of 1400 nm to 2600 nm is absorbed by the cornea and does not reach the retina even when irradiated to the eye. Therefore, light in this wavelength range is safe against human irradiation. The light emitted from the VCSELs 10 in the L2 ″ and R2 ″ rows is reflected by the object and received by the light receiving elements 14 in the L3 ″ and R3 ″ rows. About another structure, it is the same as that of 2nd Embodiment.

  As described above, in the semiconductor light emitting device 51 of the present embodiment, the VCSEL 10 and the light receiving element using wavelengths that are safe for human eyes in order to mainly detect the adjacent two rows in the outermost row. 14 Thereby, even if the emitted light from the outermost VCSEL 10 is irradiated to the human eye, the human eye is not damaged.

  In the present embodiment, the two rows located on the outermost side are the VCSEL 10 and the light receiving element 14 that mainly detect a close person. However, the present invention is not limited to this arrangement, and can be arranged at an arbitrary position. At that time, it is preferable that the VCSEL 10 and the light receiving element 14 having a light emission wavelength (light receiving wavelength) of about 1400 nm are disposed under the light deflecting unit 9 having the largest deflection angle. Thereby, the light irradiated first to the intruding object such as a person who enters from the end of the measurement area can be light having a wavelength that is safe for human eyes.

(Configuration of distance measuring device)
FIG. 30 is a schematic diagram illustrating a configuration of a distance measuring device according to the third embodiment. As shown in FIG. 30, the light receiving elements 14 in the L3 ″ column and the R3 ″ column at both ends of the semiconductor light emitting device 51 are connected to the light receiving circuits 52 in the L3 ″ column and the light receiving circuits 52 in the R3 ″ column, respectively. On the other hand, the L2 ″ column, the L1 column, the C column, the R1 column, and the R2 ″ column of the semiconductor light emitting device 51 are driven by independent drive circuits 20, and these drive circuits are all connected to the control circuit 21. Control signals 59 and 60 are transmitted from the light receiving circuit 52 in the L3 ″ row and the light receiving circuit 52 in the R3 ″ row to the driving circuit 20 in the adjacent L2 ″ row and the driving circuit 20 in the R2 ″ row, respectively. 21 also transmits proximity notice signals 49 and 50, respectively. About another structure, it is the same as that of 2nd Embodiment.

  The light 53 emitted from the VCSELs 10 in the L1, C, and L2 rows of the semiconductor light emitting device 51 is reflected by the object, and the reflected light 54 is received by the TOF sensor 22. The signal obtained by the TOF sensor 22 is sent to the distance image calculation circuit 25, processed, and displayed on the display 26.

  On the other hand, light having a wavelength of about 1400 nm emitted from the second L2 ″ and R2 ″ rows of VCSELs 10 from the end of the semiconductor light emitting device 51 is reflected by the object, and the light receiving elements in the L3 ″ and R3 ″ rows, respectively. 14 receives light. Incidentally, since the TOF sensor 22 has little sensitivity to light having a wavelength of about 1400 nm, the distance is not measured by the light from the VCSEL 10 in the L2 ″ row and the R2 ″ row.

  The closer the object is, the stronger the intensity of the reflected light. Therefore, the light receiving circuit 52 in the L3 ″ row or the light receiving circuit 52 in the R3 ″ row has an intensity of a certain threshold value or more from the light receiving element in the L3 ″ row or the R3 ″ row. When the received light signal is obtained, it is determined that “a proximity person is present at the end” (or “a proximity person has entered from the end”). The light receiving circuit 52 in the L3 ″ column or the light receiving circuit 52 in the R3 ″ column directly sends control signals 59 and 60 to the drive circuit 20 of the VCSEL 10 in the L2 ″ column and the drive circuit 20 of the VCSEL 10 in the R2 ″ column, respectively. The emission light intensity of the VCSEL 10 in the “row, R2” row is weakened. Thereby, only the optical output of the outermost VCSEL 10 of the semiconductor light emitting device 51 can be quickly reduced.

  Further, when the light receiving circuit 52 in the L3 ″ row or the light receiving circuit 52 in the R3 ″ row obtains a light receiving signal having an intensity equal to or higher than a certain threshold value, the proximity notice signal 49 to the control circuit 21 together with the control signals 59 and 60 is obtained. , 50 is sent. As a result, the control circuit 21 can quickly know the presence of a nearby person. For example, the control circuit 21 transmits a control signal to each drive circuit 20 so as to reduce the light intensity of the VCSEL 10 in the L1 column or the R1 column. You can also.

  As described above, in the distance measuring device according to the present embodiment, as in the second embodiment, a proximity person entering from the end of the detection region can be quickly detected without going through the TOF sensor 22 and the distance image calculation circuit 25. Thus, it is possible to reduce the intensity of the laser beam toward the neighbor. Furthermore, since the light irradiated to the person first has a wavelength that is safe for the human eye, the safety of the distance measuring device can be further improved.

(Fourth embodiment)
(Configuration of semiconductor light emitting device)
FIG. 31 is a schematic cross-sectional view of the semiconductor light emitting device according to the fourth embodiment at a position corresponding to the line BB in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the present embodiment, unlike the first embodiment, the emitted light from each VCSEL 10 is taken out from the substrate 1 side. Here, the substrate 1 is transparent to the emission wavelength of each VCSEL 10. In the configuration of each VCSEL 10, the active layer 3 is disposed between the n-side DBR 2 and the p-side DBR 4 as in the first embodiment. The p-side DBR 4 and the active layer 3 are separated in an array, and a plurality of VCSELs 10 are formed. The surface of the n-side DBR 2 exposed from the active layer 3, the side surfaces of the p-side DBR 4 and the active layer 3 are covered with an insulating film 6, and the p-side DBR 4 of each VCSEL 10 passes through the p-type contact layer 5. Each column is connected to a common p-side electrode 7. Here, the p-side electrode 7 is made of AuZn and is connected to an electrode 202 formed on a heat sink 201 made of diamond. The electrodes 202 are divided for each column, and the VCSELs 10 in each column can be individually driven by supplying power to any electrode 202.

  An n-side common electrode 203 is formed on the upper surface (light emitting surface) of the substrate 1, and the n-side common electrode 203 is opened in the light emitting region above each VCSEL 10. A light deflecting portion 9 is formed in these openings. The configuration of each light deflection unit 9 is the same as that of the first embodiment. The light deflecting unit 9 has any configuration such as a lamellar grating phase change, an inclined surface phase change, a stepped phase change, a phase bias added lamellar grating type phase change, as in the first embodiment. It may be used. About another structure, it is the same as that of 1st Embodiment.

  The VCSEL array 16 is configured by the substrate 1, the n-side DBR 2, the active layer 3, the p-side DBR 4, the p-type contact layer 5, the insulating film 6, the p-side electrode 7, and the n-side common electrode 203.

  In the semiconductor light emitting device 61 according to the present embodiment, heat generated from each VCSEL 10 can be directly released to the heat sink 201 without passing through the substrate 1. Thereby, since the temperature rise of each VCSEL10 is suppressed, the light emission characteristic of each VCSEL10 can be stabilized.

  Note that the semiconductor light emitting device 61 of this embodiment may have a configuration in which a part is a light receiving element as shown in the second or third embodiment.

  Moreover, as a structure of the distance measuring device using the semiconductor light-emitting device 61 of this embodiment, the structure of the above-mentioned 1st Embodiment-3rd Embodiment can be used.

(Fifth embodiment)
(Configuration of semiconductor light emitting device)
32A and 32B are schematic cross-sectional views of the semiconductor light emitting device according to the fifth embodiment at positions corresponding to the line BB in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the present embodiment, as shown in FIG. 32A, a transparent substrate 401 having a light deflection portion 9 formed on the lower surface and a VCSEL array 15 having a surface protective film 8 similar to that of the first embodiment are prepared. Then, as shown in FIG. 32B, the transparent substrate 401 on which the light deflection unit 9 is formed is bonded onto the VCSEL array 15 on which the surface protective film 8 is formed. Each light deflection section 9 is formed on the transparent substrate 401 so as to be positioned on the corresponding VCSEL 10. About another structure, it is the same as that of 1st Embodiment.

  In the semiconductor light emitting device 71 according to the present embodiment, since it is not necessary to form the light deflection unit 9 on the VCSEL 10 separated into a plurality of parts, the processing accuracy of the light deflection unit 9 can be improved.

  In addition, since the raise of the temperature of each VCSEL10 is suppressed by using a highly heat conductive SiC substrate etc. as the transparent substrate 401, the light emission characteristic of each VCSEL10 can be stabilized.

  Further, as in the first embodiment, the optical deflecting unit 9 has any configuration such as a lamellar grating type phase change, an inclined surface phase change, a stepped phase change, and a phase bias added lamellar grating type phase change. It may be used.

  Note that the semiconductor light emitting device 71 of this embodiment may have a configuration in which part of the semiconductor light emitting device 71 is a light receiving element as shown in the second or third embodiment.

  Moreover, as a structure of the distance measuring device using the semiconductor light-emitting device 71 of this embodiment, the structure of the above-mentioned 1st Embodiment-3rd Embodiment can be used.

(Sixth embodiment)
(Configuration of semiconductor light emitting device)
33A and 33B are schematic cross-sectional views of the semiconductor light emitting device according to the sixth embodiment at a position corresponding to the line BB in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the present embodiment, as shown in FIG. 33A, a transparent substrate 401 having a light deflection unit 9 formed on the lower surface and a VCSEL array 16 configured to emit light from the substrate 1 side similar to the fourth embodiment are prepared. . Then, as shown in FIG. 33B, a transparent substrate 401 on which the light deflection unit 9 is formed is bonded onto the VCSEL array 16. Each light deflection section 9 is formed on the transparent substrate 401 so as to be positioned on the corresponding VCSEL 10. Other configurations are the same as those in the fourth embodiment.

  In the semiconductor light emitting device 81 according to the present embodiment, as in the fifth embodiment, since it is not necessary to form the light deflection section 9 on the VCSEL 10 separated into a plurality of parts, the processing accuracy of the light deflection section 9 is improved. be able to.

  Further, similarly to the fourth embodiment, the heat generated from each VCSEL 10 can be directly released to the heat sink 201 without going through the substrate 1, so that the rise in the temperature of each VCSEL 10 is suppressed, and the light emission characteristics of each VCSEL 10 can be reduced. Can be stabilized.

  The light deflecting unit 9 has any configuration such as a lamellar grating phase change, an inclined surface phase change, a stepped phase change, a phase bias added lamellar grating type phase change, as in the first embodiment. It may be used.

  Further, the semiconductor light emitting device 81 of the present embodiment may be configured such that a part thereof is the light receiving element 14 as shown in the second or third embodiment.

  Furthermore, as the configuration of the distance measuring device using the semiconductor light emitting device 81 of the present embodiment, the configurations of the first to third embodiments described above can be used.

  The semiconductor light emitting device, the distance measuring device using the semiconductor light emitting device, and the distance measuring device control method according to the present disclosure can maintain the ability to measure the distance to an object at a long distance while ensuring safety to a person. Therefore, it is useful as a vehicle-mounted sensor.

1 substrate 2 n-side DBR
3 Active layer 4 p-side DBR
5 p-type contact layer 6 insulating film 7 p-side electrode 8 surface protective film 9 optical deflecting unit 10 VCSEL
DESCRIPTION OF SYMBOLS 11 Opening part 12 Pad electrode 13 N side common electrode 14 Light receiving element 15 VCSEL array 16 VCSEL array 17 Active layer 19 Semiconductor light-emitting device 20 Drive circuit 21 Control circuit 22 TOF sensor 23 Light reception timing signal 24 Reference timing signal 25 Distance image calculation circuit 26 Display Display 27 Signal from Distance Image Calculation Circuit 28 Operation Lever 31 Laser Light 32 Reflected Light 41 Semiconductor Light Emitting Device 42 Light Receiving Circuit 43 Emission Light 44 Reflected Light 45 Reflected Light 46 Reflected Light 47 Control Signal 48 Control Signal 48 Proximity Prediction Signal 50 Proximity warning signal 51 Semiconductor light emitting device 52 Light receiving circuit 53 Emission light 54 Reflected light 55 Reflected light 56 Emission light 57 Emission light 58 Reflected light 59 Control signal 60 Control signal 61 Semiconductor light emitting device 71 Semiconductor light emitting device 81 Semiconductor light emitting device 01,102,103 light deflection unit (lamellar grating type phase change)
111, 112, 113 Light deflection part (inclined plane phase change)
131, 132, 133 Light deflector (stepwise phase change)
151, 152, 153 Light deflector (stepwise phase change)
181, 182, 183 Optical deflection unit (phase bias added lamellar grating type phase change)
201 heat sink 202 electrode 203 n-side common electrode 310 diffusion plate 401 transparent substrate

Claims (16)

A semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction;
A light deflector provided on the light emitting surface side of the semiconductor light emitting element and deflecting the light emitted from the semiconductor light emitting element,
The emitted lights from the plurality of semiconductor light emitting elements have different deflection angles in the first direction,
The semiconductor light emitting device, wherein the semiconductor light emitting element can be driven to emit light for each of the emitted lights having the respective deflection angles.   2. The semiconductor light emitting device according to claim 1, wherein the deflection angle of the emitted light increases in order from the center to the end of the semiconductor light emitting element array. The semiconductor light emitting element array includes a plurality of semiconductor light emitting elements arranged along a second direction intersecting with the first direction, starting from each of the semiconductor light emitting elements arranged along a first direction. In addition,
3. The semiconductor light emitting device according to claim 1, wherein the plurality of semiconductor light emitting elements arranged along the second direction emit emitted light having the same deflection angle and are driven by a common electrode.   The semiconductor light emitting device according to claim 1, wherein a light receiving element having high sensitivity with respect to the direction of the deflection angle is disposed.   The semiconductor light emitting element that emits light having a wavelength different from that of the semiconductor light emitting element and the light receiving element that is sensitive to the light of the wavelength are disposed in the first direction of the semiconductor light emitting element array. 4. The semiconductor light emitting device according to any one of items 3. 6. The semiconductor light emitting device according to claim 1, wherein the light deflection unit gives a phase change Φ (x) represented by the following expression to the light from the semiconductor light emitting element.
Φ (x) = [2πsin (θ _c ) / λ)] x
λ: wavelength of light θ _c : deflection angle from the normal direction of the light exit surface (the axis projected on the light exit surface in the θ _c direction is the x axis)   The semiconductor light-emitting device according to claim 6, wherein the light deflection unit gives Φ (x) using a linear phase change.   The semiconductor light-emitting device according to claim 6, wherein the light deflection unit approximates Φ (x) using a stepped phase change.   The semiconductor light-emitting device according to claim 6, wherein the light deflection unit approximates Φ (x) using a lamellar phase change.   The semiconductor light-emitting device according to claim 6, wherein the light deflection unit approximates Φ (x) by using both a stepwise phase change and a lamellar phase change. The semiconductor light emitting element is formed on a substrate,
The light deflection unit is formed on the surface of the substrate opposite to the surface on which the semiconductor light emitting element is formed,
The semiconductor light-emitting device according to claim 1, wherein light from the semiconductor light-emitting element is emitted through the substrate.   The semiconductor light-emitting device according to claim 1, wherein a transparent substrate on which the light deflection unit is formed is bonded to the semiconductor light-emitting element. A semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction;
A light deflection unit provided on the light emitting surface side of the semiconductor light emitting element and deflecting the light emitted from the semiconductor light emitting element, and the emitted light from the plurality of semiconductor light emitting elements is the first light A semiconductor light emitting device having different deflection angles in directions, and the semiconductor light emitting element can be driven to emit light for each of the emitted lights having the respective deflection angles;
A driving unit for driving the semiconductor light emitting element;
A light receiving portion for receiving the emitted light from the semiconductor light emitting device;
A calculation unit that calculates a distance from a difference between an emission time of the emitted light from the semiconductor light emitting device and a light reception time at the light receiving unit;
When the outgoing light is emitted in the order of the outgoing light having the smaller deflection angle from the outgoing light having the larger deflection angle, the outgoing light to be emitted next is based on the measurement distance of the outgoing light previously emitted. A distance measuring device that determines the intensity of light.   The semiconductor light emitting device according to claim 13, further comprising: a light receiving element that receives the emitted light having the largest deflection angle, and determining an intensity of the emitted light to be emitted next by a signal from the light receiving element. Distance measuring device. A semiconductor light emitting element array having a plurality of semiconductor light emitting elements arranged along a first direction;
A light deflection unit provided on the light emitting surface side of the semiconductor light emitting element and deflecting the light emitted from the semiconductor light emitting element, and the emitted light from the plurality of semiconductor light emitting elements is the first light A semiconductor light emitting device having different deflection angles in directions, and the semiconductor light emitting element can be driven to emit light for each of the emitted lights having the respective deflection angles;
A driving unit for driving the semiconductor light emitting element;
A light receiving portion for receiving the emitted light from the semiconductor light emitting device;
A driving method of a distance measuring device comprising an arithmetic unit that calculates a distance from a difference between an emission time of the emitted light from the semiconductor light emitting device and a light reception time at the light receiving unit,
When the outgoing light is emitted in the order of the outgoing light having the smaller deflection angle from the outgoing light having the larger deflection angle, the outgoing light to be emitted next is based on the measurement distance of the outgoing light previously emitted. A method of driving a distance measuring device that determines the intensity of the incident light.   The said semiconductor light-emitting device has a light receiving element which receives the said emitted light with the said largest deflection | deviation angle, and determines the intensity | strength of the said emitted light to radiate | emits next with the signal from the said light receiving element. Driving method of the distance measuring device.

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