JP2016132812A - Deposition film formation apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a deposition film formation apparatus capable of producing high-quality deposition film at low costs.SOLUTION: Comprising: a reaction vessel which has a vacuum-sealable reaction space and at least part of a sidewall of which is composed of a cylindrical electrode; high-frequency power supply means which supplies high frequency power to the cylindrical electrode and excites a raw material gas supplied to the reaction space; and raw material gas introduction means which introduces the raw material gas to the reaction space, the deposition film formation apparatus forms deposition film on a cylindrical substrate in the reaction space. The deposition film formation apparatus further includes in a circumferential direction of the cylindrical electrode a plurality of cavity portions extending in a lengthwise direction of the cylindrical electrode, the cavity portions being formed of the cylindrical electrode and a cavity portion forming member, the cavity portion forming member being connected to the raw material gas introduction means and having a hole in communication to the cavity portions, and the cylindrical electrode having a plurality of holes in communication from the cavity portions to the reaction space.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a deposited film forming apparatus. The present invention particularly relates to a deposited film forming apparatus for forming a deposited film by a plasma CVD (Chemical Vapor Deposition) method.

  Conventionally, various deposition film forming apparatuses for forming a deposition film made of a non-single crystal material such as amorphous or polycrystalline on a substrate to be processed have been proposed. For example, an amorphous silicon (hereinafter also referred to as “a-Si”) film is used as a deposited film for an electrophotographic photoreceptor. An electrophotographic photosensitive member on which an a-Si deposited film is formed (hereinafter also referred to as “a-Si photosensitive member”) has a large area because the film thickness of the deposited film and the uniformity of film characteristics greatly affect image characteristics A technique for forming a uniform deposited film in the region is required.

In general, a plasma CVD method is used for producing an a-Si photosensitive member. Among them, a manufacturing method in which a source gas is decomposed with high-frequency power (mainly 13.56 MHz) to form a deposited film on a cylindrical substrate has been widely put into practical use. In order to obtain a uniform deposited film in the circumferential direction and the longitudinal direction of the cylindrical substrate, various techniques are disclosed regarding the method of introducing the source gas.
For example, an electrophotographic photoreceptor manufacturing apparatus is disclosed in which a gas supply member provided with a tubular cavity and a gas discharge hole constitutes a part of a cylindrical electrode and is detachable from the cylindrical electrode body. (See Patent Document 1).

JP 2011-242424 A

With the technique as described above, it has become possible to obtain an a-Si photosensitive member with improved uniformity of the deposited film.
However, the level of market demand for products using an electrophotographic photosensitive member is increasing day by day, and there is a demand for an electrophotographic photosensitive member that is of high quality, and that can be reduced in price and running cost. Various measures and ideas have been implemented to meet such requirements.

  In order to reduce the price of the a-Si photosensitive member, that is, to reduce the manufacturing cost, it is effective to suppress investment in the deposited film forming apparatus and increase the utilization efficiency of the source gas. As means for achieving them, it is conceivable to simplify the structure of the deposited film forming apparatus, and to reduce the reaction space of the deposited film forming apparatus.

For example, the deposited film forming apparatus described in Patent Document 1 is expensive to manufacture because the structure of the cylindrical electrode and the gas supply member is complicated. In addition, the degree of freedom in designing the apparatus is limited from the viewpoint of the strength of the cylindrical electrode. For example, it is not easy to reduce the inner diameter of the cylindrical electrode in order to reduce the reaction space.
Therefore, an object of the present invention is to provide a deposited film forming apparatus capable of producing a high quality deposited film at a low cost.

According to the present invention, there is provided a reaction vessel having a reaction space capable of being vacuum-tight and having at least a part of side walls made of cylindrical electrodes;
High-frequency power supply means for supplying high-frequency power to the cylindrical electrode and exciting the source gas supplied to the reaction space;
Source gas introduction means for introducing source gas into the reaction space;
A deposited film forming apparatus for forming a deposited film on a cylindrical substrate in the reaction space,
The deposited film forming apparatus comprises:
A plurality of hollow portions extending in the longitudinal direction of the cylindrical electrode in the circumferential direction of the cylindrical electrode;
The cavity is formed by the cylindrical electrode and a cavity forming member,
The cavity forming member has a hole connected to the source gas introduction means and communicating with the cavity,
The cylindrical electrode is provided with a deposited film forming apparatus having a plurality of holes communicating from the cavity to the reaction space.

  According to the present invention, the structure can be simplified and inexpensively formed by forming a plurality of cavities serving as source gas introduction paths between the cylindrical electrode and the cavity forming member. Furthermore, since the strength is increased, the degree of freedom in device design is increased. Thereby, it is possible to provide a deposited film forming apparatus capable of producing a high quality deposited film at a low cost.

It is sectional drawing which shows typically the example of the deposited film formation apparatus which concerns on this invention. It is sectional drawing which shows typically the example of the deposited film formation apparatus of a prior art. It is sectional drawing which shows typically a part of cylindrical electrode which concerns on this invention. It is sectional drawing which shows typically the example of the cylindrical electrode which concerns on this invention. It is sectional drawing which shows typically the example of the cylindrical electrode which concerns on this invention.

<First embodiment>
Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view showing an example of a deposited film forming apparatus for producing an electrophotographic photosensitive member by RF (Radio-Frequency) -plasma CVD method. FIG. 1 (a) is a longitudinal sectional view, FIG. b) is a cross-sectional view.

  The deposited film forming apparatus 100 is an apparatus for producing an a-Si photosensitive member by forming a deposited film on a cylindrical substrate 120 by plasma processing. A reaction vessel 101 is formed by a cylindrical electrode 102 forming a part of the side wall of the reaction vessel, an upper insulator 106, a lower insulator 107, a bottom wall 103, an upper wall 104, and an upper lid 105. A reaction space 111 capable of being vacuum-tight is formed on the peripheral surface side.

  The deposited film forming apparatus 100 includes a cavity 109 formed between the cylindrical electrode 102 and the cavity forming member 108, and the cavity 109 extends in the longitudinal direction of the cylindrical electrode 102. The hollow portion 109 is formed by forming a concave groove in the longitudinal direction of the cylindrical electrode 102 on the outer peripheral surface side of the cylindrical electrode 102, and covering the concave groove with a flat plate-shaped hollow portion forming member 108. . The cavity forming member 108 is detachable from the cylindrical electrode 102, and the cavity forming member 108 and the cylindrical electrode 102 have a structure in which airtightness is maintained with an O-ring (not shown) interposed therebetween. A plurality of cavities 109 are provided in the circumferential direction of the cylindrical electrode 102 (eight in FIG. 1).

  A plurality of holes 110 communicating with the reaction space 111 from the cavity 109 are formed in the cylindrical electrode 102. That is, the cylindrical electrode 102 is directly processed to open the hole 110. The plurality of holes 110 are linearly formed in the longitudinal direction of the cylindrical electrode 102. The cavity forming member 108 is a raw material comprising a mixing device (not shown) and a raw material gas inflow valve 119 with a mass flow controller for adjusting the flow rate of the raw material gas interposed through an insulating joint member 117 and a gas supply pipe 118. Connected to the gas introduction means. Thus, the cavity 109 and the hole 110 serve as a source gas introduction path, and the source gas can be introduced into the reaction space 111.

  In order to uniformly introduce the source gas into the reaction space 111 in the longitudinal direction of the cylindrical electrode 102, it is necessary to appropriately set the conductance of the cavity 109 and the hole 110. Specifically, the hole 110 has a reasonably small conductance, and the cavity 109 needs to have a sufficiently larger conductance than the hole 110.

  Since the diameter of the hole 110 is 0.5 mm or more, drilling is easy, and when the diameter is 1.0 mm or less, abnormal discharge inside the hole 110 can be suppressed. The length of the hole 110 can be set as appropriate because the length has little influence on the conductance. However, since the thickness of the cylindrical electrode 102 is the smallest around the portion where the hole 110 is formed, the length of the hole 110 is preferably 3 mm or more from the viewpoint of the strength of the cylindrical electrode 102. .

  If the number of holes 110 per cavity 109 is too small, the discharge amount and discharge pressure of the raw material gas per hole 110 will increase and the deposited film will be affected. On the other hand, if the number is too large, the total conductance of the plurality of holes 110 increases, so that it is difficult to uniformly introduce the cylindrical electrode 102 in the longitudinal direction. For this reason, it is necessary to appropriately set the number of holes 110 per cavity 109. Further, in order to introduce gas uniformly in the circumferential direction of the cylindrical electrode 102, the number of holes 110 communicating with the cavity 109 in each circumferential direction is preferably the same.

  The conductance of the cavity 109 needs to be sufficiently larger than the total conductance of the plurality of holes 110 communicating with one cavity 109, and is preferably 10 times or more. In order to increase the conductance of the hollow portion 109, the cross-sectional area in the longitudinal direction of the cylindrical electrode 102 may be set large, but if it is too large, there is an upper limit because the strength of the cylindrical electrode 102 decreases. Further, in order to uniformly introduce gas in the circumferential direction of the cylindrical electrode 102, it is preferable that the conductance of the cavity 109 in each circumferential direction is the same.

Although there is no particular limitation on the cross-sectional shape of the hollow portion 109 in the longitudinal direction of the cylindrical electrode 102, a rectangular groove is formed in the present invention from the viewpoint of workability because a concave groove is formed on the outer peripheral surface of the cylindrical electrode 102. Is suitable. When the cavity 109 has a quadrangular shape, the vertical and horizontal dimensions can be appropriately set as long as a necessary cross-sectional area can be secured.
By forming the introduction path of the source gas as described above, the problem of the deposited film forming apparatus of Patent Document 1 is solved. This will be described with reference to the drawings.

2A and 2B are schematic views showing an example of a deposited film forming apparatus for manufacturing the electrophotographic photosensitive member of Patent Document 1. FIG. 2A is a longitudinal sectional view, and FIG. 2B is a transverse sectional view. .
The deposited film forming apparatus 200 is provided with a gas block 203 (gas supply member) serving as a source gas introduction path. The gas block 203 can be detached from the cylindrical electrode 202.

  The cylindrical electrode 202 has a plurality of openings (length B × width C) in a slit shape in the circumferential direction (eight in FIG. 2). The gas block 203 is fitted into the opening and attached to the cylindrical electrode 202. The gas block 203 includes a hollow portion 209 extending in the longitudinal direction of the cylindrical electrode 202 inside. Further, a plurality of holes 210 communicating from the hollow portion 209 to the reaction space 211 are formed in the gas block 203 in a straight line in the longitudinal direction of the cylindrical electrode 202.

The problem of the deposited film forming apparatus 200 of Patent Document 1 is that it may not be easy to ensure the strength of the cylindrical electrode 202, and this limits the degree of freedom in apparatus design.
Since the cylindrical electrode 202 has a plurality of openings formed in a slit shape, the cylindrical electrode 202 has a certain thickness to ensure that the reaction space 211 is not deformed by repeated vacuum / atmospheric pressure. is necessary. Further, the gas block 203 is not easily processed to form the cavity 209 therein. For these reasons, the production costs are expensive.

  In addition, since the width D of the non-opening is required to some extent to ensure the strength of the cylindrical electrode 202, the number of gas blocks 203 in the circumferential direction of the cylindrical electrode 202 is limited. For example, when the width C of the opening is fixed when reducing the inner diameter of the cylindrical electrode 202, the number of gas blocks 203 in the circumferential direction is reduced, and the uniformity of the deposited film in the circumferential direction of the cylindrical substrate 120 is reduced. May decrease.

Further, since the cavity 209 is formed inside the gas block 203, the length of the cylindrical electrode 202 in the longitudinal direction is shorter than that of the gas block 203, and correspondingly, the plurality of holes 210 are from the top to the bottom. Distance (gas blowing area) E is also limited.
On the other hand, in the deposited film forming apparatus 100 of the present invention, since the cylindrical electrode 102 does not have a slit-like opening, the strength of the cylindrical electrode 102 is high, thereby increasing the degree of freedom in designing the apparatus. Therefore, for example, the thickness of the cylindrical electrode 102 can be reduced. Furthermore, the cavity 109 serving as a source gas introduction path has a simple structure. For these reasons, the production cost can be reduced.

  When the strength of the cylindrical electrode 102 is high, for example, the number of the hollow portions 109 in the circumferential direction of the cylindrical electrode 102 can be increased. In this case, the uniformity of the blowing of the source gas in the circumferential direction of the cylindrical electrode 102 is improved, and the uniformity of the deposited film in the circumferential direction of the cylindrical substrate 120 can be expected. Further, for example, it is possible to reduce the inner diameter of the cylindrical electrode 102 while keeping the number of the cavity portions 109 as it is. In this case, the reaction space 111 is reduced and the utilization efficiency of the source gas is improved, and the production of the photoconductor is performed. Cost reduction can be expected.

  Further, since the cavity 109 is formed between the cylindrical electrode 102 and the cavity forming member 108, the length of the cylindrical electrode 102 in the longitudinal direction is longer than the cavity 209 formed in the gas block 203. Can be long. Since the hole 110 is formed corresponding to the hollow portion 109, the distance (gas blowing region) A from the top to the bottom of the plurality of holes 110 formed linearly in the longitudinal direction of the cylindrical electrode 102. A> E. Therefore, the uniformity of the blowing of the source gas in the longitudinal direction of the cylindrical electrode 102 is improved, and the uniformity of the deposited film in the longitudinal direction of the cylindrical substrate 120 can be expected. For example, when the gas blowing area A is made the same as the gas blowing area E, the length of the cylindrical electrode 102 in the longitudinal direction can be made shorter than that of the cylindrical electrode 202.

In this case, the reaction space 111 is reduced, the utilization efficiency of the raw material gas is improved, and a reduction in the manufacturing cost of the photoreceptor can be expected.
Depending on the type of photoconductor to be manufactured, the deposition film uniformity in the longitudinal direction of the cylindrical substrate may be improved by changing the arrangement of the source gas blowing holes in the longitudinal direction of the cylindrical electrode. is there.

  The deposited film forming apparatus 200 of Patent Document 1 can be replaced with a gas block 203 in which appropriate holes 210 are arranged depending on the type of the photoreceptor to be manufactured. Accordingly, since it is not necessary to replace the cylindrical electrode 202, there is an advantage that the work time for the setup change can be shortened.

The cylindrical electrode 102 of the deposited film forming apparatus 100 of the present invention cannot be changed in arrangement because a plurality of holes 110 are formed. However, since the cavity forming member 108 can be detached from the cylindrical electrode 102, the hole 110 can be filled from the cavity forming member 108 side.
FIG. 3 is a diagram schematically showing a part of the cross section of the cylindrical electrode 102 in the longitudinal direction. For example, if a member such as the plug 301 is used, a part of the hole 110 can be filled without forming irregularities on the inner peripheral surface side of the cylindrical electrode 102, and the arrangement of holes through which the source gas blows out can be adjusted. That is, like the deposited film forming apparatus 200, there is an advantage that the work time for the setup change is short.

The deposited film forming apparatus 100 using the cylindrical electrode 102 and the cavity forming member 108 having the above-described configuration will be further described with reference to the drawings.
The deposited film forming apparatus 100 shown in FIG. 1 includes a high frequency power source 112 (high frequency power supply means) and a matching box 113 and supplies high frequency power (13.56 MHz) to the cylindrical electrode 102. Thereby, plasma is generated in the reaction space 111 to excite the source gas, and a deposited film can be formed on the outer peripheral surface of the cylindrical substrate 120.
An exhaust pipe 114 is connected to the bottom wall 103 of the reaction vessel 101, the exhaust pipe 114 is connected to an exhaust device (vacuum pump) (not shown) via an exhaust valve 115, and the inside of the reaction vessel 101 uses an exhaust device. Can be evacuated

The upper and lower sides of the cylindrical electrode 102 are insulated from the bottom wall 103 and the upper wall 104 by an upper insulator 106 and a lower insulator 107 made of ceramics. The upper wall 104 has an upper lid 105 from which a substrate holder 122 equipped with a cylindrical substrate 120 and an auxiliary substrate 121 can be carried into and out of the reaction vessel 101.
A heating heater 124 is provided inside the reaction vessel 101. Since the substrate holder 122 carried into the reaction vessel 101 is installed on the cradle 123 so as to cover the heater 124, the cylindrical substrate 120 can be heated from the inner peripheral surface side. Further, the cradle 123 is connected to a motor (not shown) and is rotatable, and the cylindrical base 120 can be rotated together with the cradle 123 while being mounted on the base holder 122.

(Manufacture of a-Si photoconductor)
An example of manufacturing an a-Si photoreceptor using the deposited film forming apparatus 100 configured as described above will be described.
First, the cylindrical base 120 and the auxiliary base 121 whose surfaces are mirror-finished using a lathe are mounted on the base holder 122.
Next, the inside of the reaction vessel 101 is set to atmospheric pressure, the upper cover 105 is opened, and the substrate holder 122 is set on the receiving stand 123.

  Next, the upper lid 105 is closed, the exhaust valve 115 is opened, and the inside of the reaction vessel 101 is exhausted. When the reading of the vacuum gauge 116 becomes a predetermined pressure (for example, 0.67 Pa) or less, an inert gas for heating (for example, argon gas) is introduced into the reaction vessel 101. Then, the flow rate of the inert gas for heating and the exhaust speed of an exhaust device (not shown) are adjusted so that the inside of the reaction vessel 101 has a predetermined pressure.

  Thereafter, a temperature controller (not shown) is activated to activate the heater 124 and control the temperature of the cylindrical substrate 120 to a predetermined temperature (for example, 20 to 500 ° C.). When the cylindrical substrate 120 is heated to a predetermined temperature, the inert gas is gradually stopped. In parallel with this, the source gas for forming the deposited film is gradually introduced.

Examples of the source gas include material gases such as silane (SiH ₄ ), disilane (Si ₂ H ₆ ), methane (CH ₄ ), ethane (C ₂ H ₆ ), and nitric oxide (NO), diborane ( B ₂ H ₆ ), doping gases such as phosphine (PH ₃ ), and diluent gases such as hydrogen (H ₂ ), helium (He), and argon (Ar). Next, each raw material gas is adjusted to a predetermined flow rate by a mass flow controller (not shown) in the mixing device (not shown).

At that time, the exhaust speed of the exhaust device is adjusted while looking at the vacuum gauge 116 so that the inside of the reaction vessel 101 is maintained at a predetermined pressure (for example, 1 to 100 Pa). At this time, the cradle 123 is rotated, and the substrate holder 122 on which the cylindrical substrate 120 and the auxiliary substrate 121 are mounted is rotated.
After completing the preparation for forming the deposited film by the above procedure, the deposited film is formed on the outer peripheral surface of the cylindrical substrate 120. Specifically, after confirming that the pressure in the reaction vessel 101 is stable, power is supplied from the high-frequency power source 112 to the cylindrical electrode 102 to generate plasma to excite the source gas. As a result, a predetermined deposited film is formed on the outer peripheral surface of the cylindrical substrate 120.

  After forming a deposited film with a desired film thickness, the supply of electric power is stopped, the flow of each source gas into the reaction vessel 101 is stopped, and the inside of the reaction vessel 101 is temporarily evacuated so as to achieve a high vacuum. By repeating the above operation, an a-Si deposited film having a predetermined layer structure can be formed, and an a-Si photoreceptor can be manufactured.

<Second Embodiment>
A second embodiment of the present invention will be described with reference to FIG.
4A and 4B are schematic views showing an example of a cylindrical electrode and a cavity forming member of a deposited film forming apparatus for producing an electrophotographic photosensitive member. FIG. 4A is a longitudinal sectional view, and FIG. It is a cross-sectional view.
In the present embodiment, a concave groove is formed in the cavity portion forming member 408 in the longitudinal direction of the cylindrical electrode 402, and the cavity portion 409 is formed between the cavity portion forming member 408 and the outer peripheral surface of the cylindrical electrode 402. Forming. The rest is the same as in the first embodiment.

  The cylindrical electrode 102 of the first embodiment has a plurality of concave grooves formed on the outer peripheral surface, but the cylindrical electrode 402 of the present embodiment does not have this, so the cylindrical electrode 402 is a cylindrical electrode. The strength is higher than that of 102, and the degree of freedom in device design is higher. Thereby, for example, it becomes possible to reduce the thickness of the cylindrical electrode 402 or increase the number of the hollow electrodes 409 in the circumferential direction of the cylindrical electrode 402.

<Third embodiment>
A third embodiment of the present invention will be described with reference to FIG.
FIG. 5 is a schematic view showing an example of a cylindrical electrode and a cavity forming member of a deposited film forming apparatus for producing an electrophotographic photosensitive member, FIG. 5 (a) is a longitudinal sectional view, and FIG. It is a cross-sectional view.
In the present embodiment, concave grooves are formed in the longitudinal direction of the cylindrical electrode 402 on both the outer peripheral surface of the cylindrical electrode 502 and the cavity portion forming member 508, and the hollow portions 509 are formed by overlapping the respective concave grooves. Forming. Others are the same as those in the first and second embodiments.

  In the cylindrical electrode 402 of the second embodiment, the length of the hole 410 is increased. When forming the hole 410 in the thick cylindrical electrode 402, if the hole diameter is small, drilling may be difficult. In the present embodiment, a concave groove is formed in the longitudinal direction of the cylindrical electrode 402 in a range in which drilling can be performed, and a concave groove is formed in the hollow portion forming member 508 so that a cross-sectional area of the hollow portion 509 is necessary. Form. As a result, it is possible to manufacture a cylindrical electrode 502 having a balance between strength and workability.

EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
Each of the following examples and comparative examples is evaluated based on the manufacturing cost of the cylindrical electrode of the deposited film forming apparatus and the cavity forming member or the gas block, and the reaction space volume of the deposited film forming apparatus as an alternative to the gas utilization efficiency. Then, relative evaluation was performed when the comparative example was 100. The smaller the number, the better the evaluation result. The results are shown in Table 1.

[Example 1]
The cylindrical electrode 102 and the cavity forming member 108 of the deposited film forming apparatus 100 of FIG. 1 were manufactured. The dimensions of the cylindrical electrode 102 are a length in the longitudinal direction of 900 mm, an inner diameter of 200 mm, and a wall thickness of 20 mm. In the circumferential direction of the cylindrical electrode 102, eight concave grooves having a length of 850 mm, a width of 18 mm, and a depth of 14 mm were formed. In the concave groove, 84 holes 110 each having a diameter of 0.5 mm and a length of 6 mm were formed at a pitch of 10 mm. Eight cavities forming members 108 were manufactured.

[Example 2]
The cylindrical electrode 102 of Example 1 with a thickness of 3 mm was manufactured. Since the same concave groove as in Example 1 was formed in the circumferential direction of the cylindrical electrode, the length of the hole 110 was 3 mm. There was no problem in strength even if the thickness of the cylindrical electrode was reduced.

Example 3
A cylindrical electrode 102 having an inner diameter reduced by 20 mm was manufactured. An a-Si photosensitive member was manufactured using this cylindrical electrode, but there was no problem in the uniformity of the deposited film.

[Comparative Example]
The cylindrical electrode 202 and the gas block 203 of the deposited film forming apparatus 200 of FIG. 2 were manufactured. The dimensions and thickness of the cylindrical electrode 202 are the same as the dimensions and thickness of the cylindrical electrode 102 of the first embodiment. In the circumferential direction of the cylindrical electrode 202, eight slit-like openings having a length of 850 mm and a width of 30 mm were formed. Eight gas blocks with the same length and width as the opening and a thickness of 27 mm were produced. In the gas block 203, a hollow portion 209 having a diameter of 18 mm and a length of 830 mm was formed inside, and 82 holes 210 having a diameter of 0.5 mm and a length of 6 mm were formed at a pitch of 10 mm.

  As shown in Table 1, the production cost of each example of the present invention was significantly lower than that of the comparative example. Further, since the degree of freedom in device design is increased, the manufacturing cost can be reduced while maintaining the uniformity of the deposited film. That is, it is possible to provide a deposited film forming apparatus capable of producing a high quality deposited film at a low cost.

DESCRIPTION OF SYMBOLS 101 ... Reaction container 102 ... Cylindrical electrode 108 ... Cavity part formation member 109 ... Cavity part 110 ... Hole 111 ... Reaction space 112 ... High frequency power supply 120 ... Cylindrical substrate

Claims (3)

A reaction vessel having a reaction space capable of being vacuum-tight and having at least a part of side walls made of cylindrical electrodes;
High-frequency power supply means for supplying high-frequency power to the cylindrical electrode and exciting the source gas supplied to the reaction space;
Source gas introduction means for introducing source gas into the reaction space;
A deposited film forming apparatus for forming a deposited film on a cylindrical substrate in the reaction space,
The deposited film forming apparatus comprises:
A plurality of hollow portions extending in the longitudinal direction of the cylindrical electrode in the circumferential direction of the cylindrical electrode;
The cavity is formed by the cylindrical electrode and a cavity forming member,
The cavity forming member has a hole connected to the source gas introduction means and communicating with the cavity,
The deposited electrode forming apparatus, wherein the cylindrical electrode has a plurality of holes communicating from the hollow portion to the reaction space. The cylindrical electrode is formed with a concave groove extending in the longitudinal direction of the cylindrical electrode on the outer peripheral surface,
The hollow portion is formed by the concave groove and the hollow portion forming member,
The deposited film forming apparatus according to claim 1. The deposited film forming apparatus according to claim 1, wherein the cavity forming member is detachable from the cylindrical electrode.