JP2016119343A - Cleaning method, manufacturing method of semiconductor device, substrate processor and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning method capable of improving the cleaning efficiency in a processing vessel after used for processing to form a film containing oxygen.SOLUTION: The cleaning method is a method to clean inside a processing vessel which has been used for processing to form a film containing oxygen over a substrate. The cleaning method includes the steps of: (a) supplying hydrogen fluoride gas to the inside of the processing vessel; and (b) supplying fluorine gas to the inside of the processing vessel after terminating the supply of the hydrogen fluoride gas to the inside of the processing vessel at a temperature to the extent that the moisture, which is generated in the processing vessel in the step (a), independently remains inside the processing vessel.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a cleaning method, a semiconductor device manufacturing method, a substrate processing apparatus, and a program.

  As one process of manufacturing a semiconductor device (device), a film forming process for forming an oxygen (O) -containing film on a substrate housed in a processing container may be performed. When this film forming process is performed, deposits containing an O-containing film adhere to the processing container. Therefore, a cleaning process may be performed in which a cleaning gas is supplied into the processing container after the film formation process to remove deposits attached to the processing container.

  An object of this invention is to provide the technique which can improve the cleaning efficiency in the processing container after performing the process which forms an O containing film | membrane.

According to one aspect of the invention,
A method for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
In the step (a), there is provided a cleaning method in which, when water generated in the processing container alone is present, the temperature is such that the water remains in the processing container.

  According to the present invention, it is possible to improve the cleaning efficiency in the processing container after performing the process of forming the O-containing film.

It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by one Embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view. It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by one Embodiment of this invention, and is a figure which shows a processing furnace part with the sectional view on the AA line of FIG. It is a schematic block diagram of the controller of the substrate processing apparatus used suitably by one Embodiment of this invention, and is a figure which shows the control system of a controller with a block diagram. It is a figure which shows the timing of the gas supply in the film-forming process of one Embodiment of this invention. It is a figure which shows the timing of the gas supply in the cleaning process of one Embodiment of this invention. (A) is a figure which shows the modification 1 of the timing of gas supply in the cleaning process of one Embodiment of this invention, (b) is the modification 2 of the timing of gas supply in the cleaning process of one Embodiment of this invention. (C) is a figure which shows the modification 3 of the timing of the gas supply in the cleaning process of one Embodiment of this invention. (A) is a figure which shows progress until the cleaning and cycle purge in a processing container are completed in an Example, (b) is until a cleaning and cycle purge in a processing container are completed in a comparative example. It is a figure which shows progress of. (A) is a figure which shows progress until the replacement | exchange of the nozzle provided in the process container in an Example is completed, (b) is replacement | exchange of the nozzle provided in the process container in a comparative example. It is a figure which shows progress until is completed. (A) is a schematic block diagram of the processing furnace of the substrate processing apparatus used suitably by other embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view, (b) is other of this invention It is a schematic block diagram of the processing furnace of the substrate processing apparatus used suitably by this embodiment, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view.

<One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

(1) Configuration of Substrate Processing Apparatus As shown in FIG. 1, the processing furnace 202 has a heater 207 as heating means (heating mechanism). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate. As will be described later, the heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat.

A reaction tube 203 is disposed inside the heater 207 concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A manifold (inlet flange) 209 is disposed below the reaction tube 203 concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), for example, and is formed in a cylindrical shape with an upper end and a lower end opened. The upper end portion of the manifold 209 is engaged with the lower end portion of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203. As the manifold 209 is supported by the heater base, the reaction tube 203 is installed vertically. A processing vessel (reaction vessel) is mainly constituted by the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to accommodate a plurality of wafers 200 as substrates in a state where they are arranged in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later. A cover 209 a is provided on the inner periphery of the manifold 209. The cover 209a is made of, for example, quartz or SiC, and is provided so as to cover the inner wall of the manifold 209 along the inner wall of the manifold 209.

  In the processing chamber 201, nozzles 249a, 249b, and 249e are provided so as to penetrate the manifold 209. The nozzles 249a, 249b, 249e are made of a heat resistant material such as quartz or SiC. Gas supply pipes 232a, 232b, and 232e are connected to the nozzles 249a, 249b, and 249e, respectively. A gas supply pipe 232c is connected to the gas supply pipe 232a. Gas supply pipes 232d and 232i are connected to the gas supply pipe 232b. A gas supply pipe 232j is connected to the gas supply pipe 232e. As described above, the reaction container is provided with the three nozzles 249a, 249b, and 249e and the seven gas supply pipes 232a to 232e, 232i, and 232j, and allows a plurality of types of gases to enter the processing chamber 201. It is comprised so that it can supply.

  In the gas supply pipes 232a to 232e, 232i, and 232j, in order from the upstream direction, mass flow controllers (MFC) 241a to 241e, 241i, and 241j that are flow rate controllers (flow rate control units) and valves 243a to 243e that are on-off valves, 243i and 243j are respectively provided. Gas supply pipes 232f to 232h for supplying an inert gas are connected to the downstream sides of the valves 243a, 243b, and 243e of the gas supply pipes 232a, 232b, and 232e, respectively. The gas supply pipes 232f to 232h are provided with MFCs 241f to 241h as flow rate controllers (flow rate control units) and valves 243f to 243h as opening / closing valves, respectively, in order from the upstream direction.

  Nozzles 249a and 249b are connected to the distal ends of the gas supply pipes 232a and 232b, respectively. As shown in FIG. 2, the nozzles 249 a and 249 b are arranged in an annular space between the inner wall of the reaction tube 203 and the wafer 200, above the lower part of the inner wall of the reaction tube 203 and above the wafer 200 in the arrangement direction. It is provided to stand up towards each. That is, the nozzles 249a and 249b are respectively provided along the wafer arrangement area in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area where the wafers 200 are arranged. In other words, the nozzles 249 a and 249 b are respectively provided on the side of the end portion (periphery portion) of each wafer 200 carried into the processing chamber 201 and perpendicular to the surface (flat surface) of the wafer 200. The nozzles 249a and 249b are respectively configured as L-shaped long nozzles, and their horizontal portions are provided so as to penetrate the side wall of the manifold 209, and each vertical portion thereof is at least a wafer arrangement region. It is provided so as to rise from one end side toward the other end side. Gas supply holes 250a and 250b for supplying gas are provided on the side surfaces of the nozzles 249a and 249b, respectively. The gas supply holes 250 a and 250 b are opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200. A plurality of gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.

  As described above, in the present embodiment, an annular vertically long space defined by the inner wall of the side wall of the reaction tube 203 and the ends (peripheries) of the plurality of wafers 200 arranged in the reaction tube 203. The gas is conveyed through the nozzles 249a and 249b arranged in the inner space, that is, in the cylindrical space. Then, gas is first ejected into the reaction tube 203 from the gas supply holes 250 a and 250 b opened in the nozzles 249 a and 249 b, respectively, in the vicinity of the wafer 200. The main flow of gas in the reaction tube 203 is a direction parallel to the surface of the wafer 200, that is, a horizontal direction. With such a configuration, it is possible to supply gas uniformly to each wafer 200 and improve the film thickness uniformity of the thin film formed on each wafer 200. The gas flowing on the surface of the wafer 200, that is, the residual gas after the reaction, flows toward the exhaust port, that is, the direction of the exhaust pipe 231 described later. However, the direction of the remaining gas flow is appropriately specified depending on the position of the exhaust port, and is not limited to the vertical direction.

  A nozzle 249e is connected to the tip of the gas supply pipe 232e. As shown in FIG. 1, the nozzle 249e is configured to eject gas into an annular space (hereinafter also referred to as a purge space) 201a between the inner wall of the manifold 209 and the cover 209a. The nozzle 249e is configured as an L-shaped nozzle, and its horizontal portion is provided so as to penetrate the side wall of the manifold 209, and its vertical portion is provided so as to rise upward. A gas supply hole is provided at the tip of the nozzle 249e so as to open upward. This gas supply hole may be provided on the side surface of the tip of the nozzle 249e. In this case, the gas supply hole opens in the horizontal direction.

  From the gas supply pipe 232a, for example, a halosilane source gas containing Si and a halogen element as the predetermined element is supplied into the processing chamber 201 through the MFC 241a, the valve 243a, and the nozzle 249a as the source gas containing the predetermined element. .

  The halosilane raw material gas is a gaseous halosilane raw material, for example, a gas obtained by vaporizing a halosilane raw material in a liquid state at normal temperature and normal pressure, a halosilane raw material in a gaseous state at normal temperature and normal pressure, or the like. The halosilane raw material is a silane raw material having a halogen group. The halogen group includes chloro group, fluoro group, bromo group, iodo group and the like. That is, the halogen group includes halogen elements such as chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like. It can be said that the halosilane raw material is a kind of halide. In the present specification, when the term “raw material” is used, it means “a liquid raw material in a liquid state”, “a raw material gas in a gaseous state”, or both. is there.

As the halosilane source gas, for example, a source gas containing Si and Cl, that is, a chlorosilane source gas can be used. As the chlorosilane source gas, for example, hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCDS) gas can be used. When using a liquid raw material that is in a liquid state at normal temperature and pressure, such as HCDS, the liquid raw material is vaporized by a vaporization system such as a vaporizer or bubbler and supplied as a raw material gas (HCDS gas).

From the gas supply pipe 232b, for example, an oxygen (O) -containing gas is supplied as a reaction gas into the processing chamber 201 through the MFC 241b, the valve 243b, and the nozzle 249b. The O-containing gas acts as an oxidizing gas, that is, an O source in a film forming process described later. As the O-containing gas, for example, oxygen (O ₂ ) gas can be used.

From the gas supply pipe 232c, for example, a hydrogen (H) -containing gas is supplied as a reaction gas into the processing chamber 201 through the MFC 241c, the valve 243c, the gas supply pipe 232a, and the nozzle 249a. Although the H-containing gas alone cannot be oxidized, it reacts with the O-containing gas under specific conditions in the film-forming process described below, thereby oxidizing oxidizing species such as atomic oxygen (O). It acts to improve the efficiency of the oxidation treatment. Therefore, the H-containing gas can be considered to be included in the oxidizing gas in the same manner as the O-containing gas. As the H-containing gas, for example, hydrogen (H ₂ ) gas can be used.

  From the gas supply pipe 232d, for example, hydrogen fluoride (HF) gas is supplied into the processing chamber 201 through the MFC 241d, the valve 243d, the gas supply pipe 232b, and the nozzle 249b.

  From the gas supply pipe 232e, for example, HF gas is supplied into the purge space 201a inside the cover 209a via the MFC 241e, the valve 243e, and the nozzle 249e.

From the gas supply pipe 232i, for example, fluorine (F ₂ ) gas is supplied into the processing chamber 201 through the MFC 241i, the valve 243i, the gas supply pipe 232b, and the nozzle 249b.

From the gas supply pipe 232j, for example, F ₂ gas is supplied into the purge space 201a inside the cover 209a via the MFC 241j, the valve 243j, the gas supply pipe 232e, and the nozzle 249e.

From the gas supply pipes 232f to 232h, as an inert gas, for example, nitrogen (N ₂ ) gas passes through MFCs 241f to 241h, valves 243f to 243h, gas supply pipes 232a, 232b, 232e, and nozzles 249a, 249b, 249e, respectively. And supplied into the processing chamber 201.

  When the source gas is allowed to flow from the gas supply pipe 232a, the source gas supply system is mainly configured by the gas supply pipe 232a, the MFC 241a, and the valve 243a. The nozzle 249a may be included in the source gas supply system. The source gas supply system can also be referred to as a source supply system. When flowing the halosilane source gas from the gas supply pipe 232a, the source gas supply system may be referred to as a halosilane source gas supply system or a halosilane source supply system.

  When the O-containing gas is supplied from the gas supply pipe 232b, an O-containing gas supply system is mainly configured by the gas supply pipe 232b, the MFC 241b, and the valve 243b. The nozzle 249b may be included in the O-containing gas supply system. The O-containing gas supply system can also be referred to as an oxidizing gas supply system or an oxidant supply system.

  When the H-containing gas is supplied from the gas supply pipe 232c, an H-containing gas supply system is mainly configured by the gas supply pipe 232c, the MFC 241c, and the valve 243c. The nozzle 249a may be included in the H-containing gas supply system on the downstream side of the connection portion of the gas supply pipe 232a with the gas supply pipe 232c. The H-containing gas supply system can be considered to be included in the above-described oxidizing gas supply system (oxidant supply system).

  When HF gas is supplied from the gas supply pipe 232d, the first HF gas supply system is mainly configured by the gas supply pipe 232d, the MFC 241d, and the valve 243d. It may be considered that the nozzle 249b is included in the first HF gas supply system on the downstream side of the connection portion of the gas supply pipe 232b with the gas supply pipe 232d.

  When HF gas is supplied from the gas supply pipe 232e, a second HF gas supply system is mainly configured by the gas supply pipe 232e, the MFC 241e, and the valve 243e. The nozzle 249e may be included in the second HF gas supply system.

When F ₂ gas is supplied from the gas supply pipe 232i, the first F ₂ gas supply system is mainly configured by the gas supply pipe 232i, the MFC 241i, and the valve 243i. It may be considered that the nozzle 249b is included in the first F ₂ gas supply system on the downstream side of the connection portion of the gas supply pipe 232b with the gas supply pipe 232i.

When F ₂ gas is supplied from the gas supply pipe 232j, a second F ₂ gas supply system is mainly configured by the gas supply pipe 232j, the MFC 241j, and the valve 243j. The nozzle 249e may be included in the second F ₂ gas supply system on the downstream side of the connection portion of the gas supply pipe 232e with the gas supply pipe 232e.

  Any or all of the above-described source gas supply system, O-containing gas supply system, and H-containing gas supply system may be referred to as a film forming gas supply system. In addition, either or both of the O-containing gas supply system and the H-containing gas supply system can be referred to as a reaction gas supply system.

  One or both of the first HF gas supply system and the second HF gas supply system described above may be referred to as an HF gas supply system. The HF gas supply system described above can also be referred to as a cleaning gas supply system and an etching gas supply system.

One or both of the first F ₂ gas supply system and the second F ₂ gas supply system described above may be referred to as an F ₂ gas supply system. The F ₂ gas supply system can also be referred to as a purge gas supply system.

  Further, an inert gas supply system is mainly configured by the gas supply pipes 232f to 232h, the MFCs 241f to 241h, and the valves 243f to 243h. The inert gas supply system can also be referred to as a purge gas supply system, a dilution gas supply system, or a carrier gas supply system.

  The reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. The exhaust pipe 231 is connected to a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as an exhaust valve (pressure adjustment unit). A vacuum pump 246 as an evacuation device is connected. The APC valve 244 can open and close the vacuum pump 246 while the vacuum pump 246 is in operation, thereby evacuating and stopping the vacuum exhaust in the processing chamber 201. Further, with the vacuum pump 246 in an operating state, The valve is configured such that the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may be included in the exhaust system. The exhaust pipe 231 is not limited to being provided in the reaction pipe 203, and may be provided in the manifold 209 in the same manner as the nozzles 249a, 249b, and 249e.

  Below the manifold 209, a seal cap 219 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is configured to contact the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as SUS and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring 220b is provided as a seal member that comes into contact with the lower end of the manifold 209. On the opposite side of the seal cap 219 from the processing chamber 201, a rotation mechanism 267 for rotating a boat 217 described later is installed. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203. The boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down. The boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217 and the wafer 200 supported by the boat 217 into and out of the processing chamber 201.

  The boat 217 as a substrate support is configured to support a plurality of, for example, 25 to 200 wafers 200 in a horizontal posture and in a multi-stage by aligning them in the vertical direction with their centers aligned. It is configured to arrange at intervals. The boat 217 is made of a heat-resistant material such as quartz or SiC. Under the boat 217, heat insulating plates 218 made of a heat-resistant material such as quartz or SiC are supported in multiple stages in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side. However, this embodiment is not limited to the above-mentioned form. For example, instead of providing the heat insulating plate 218 in the lower portion of the boat 217, a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided.

  A temperature sensor 263 is installed in the reaction tube 203 as a temperature detector. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature in the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is configured in an L shape similarly to the nozzles 249a and 249b, and is provided along the inner wall of the reaction tube 203.

  As shown in FIG. 3, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Has been. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. For example, an input / output device 122 configured as a touch panel or the like is connected to the controller 121.

  The storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which a later-described substrate processing procedure and conditions are described, and a cleaning in which a later-described cleaning processing procedure and conditions are described. Recipes and the like are stored so as to be readable. The process recipe is a combination of processes so that a predetermined result can be obtained by causing the controller 121 to execute each procedure in a film forming process to be described later, and functions as a program. Further, the cleaning recipe is a combination of procedures so that a predetermined result can be obtained by causing the controller 121 to execute each procedure in the cleaning process described later, and functions as a program. Hereinafter, the process recipe, the cleaning recipe, the control program, and the like are collectively referred to simply as a program. When the term “program” is used in this specification, it includes only a process recipe alone, only a cleaning recipe alone, only a control program alone, or any of a process recipe, a cleaning recipe, and a control program. May be included. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.

  The I / O port 121d is connected to the above-described MFCs 241a to 241j, valves 243a to 243j, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, boat elevator 115, and the like. .

  The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe and a cleaning recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like. Hereinafter, for convenience, these recipes are collectively referred to as “recipe”. The CPU 121a adjusts the flow rate of various gases by the MFCs 241a to 241j, the opening / closing operation of the valves 243a to 243j, the opening / closing operation of the APC valve 244, and the pressure adjustment by the APC valve 244 based on the pressure sensor 245 so as to follow the contents of the read recipe. Operation, start and stop of the vacuum pump 246, temperature adjustment operation of the heater 207 based on the temperature sensor 263, rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, lifting and lowering operation of the boat 217 by the boat elevator 115, etc. It is configured.

  The controller 121 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) 123 is prepared, and the controller 121 of this embodiment can be configured by installing a program in a general-purpose computer using the external storage device 123. However, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123. For example, the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.

(2) Film Forming Process A sequence example of forming a film on a substrate as one step of a semiconductor device (device) manufacturing process using the above-described substrate processing apparatus will be described with reference to FIG. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

In the film forming sequence shown in FIG.
Supplying HCDS gas as a raw material gas to a wafer 200 as a substrate housed in the processing container (inside the processing chamber 201);
Supplying O ₂ gas as an O-containing gas and H ₂ gas as an H-containing gas into a processing vessel under a pressure of less than atmospheric pressure, which is heated;
The silicon oxide film (SiO ₂ film, hereinafter, also simply referred to as the SiO film) is formed on the wafer 200 as an O-containing film by performing a cycle that is performed non-simultaneously, that is, without synchronizing, a predetermined number of times (n times or more). Form.

  In this specification, the above-described film forming process may be indicated as follows for convenience. It should be noted that the same notation is used in the following modified examples and the description of other embodiments.

(HCDS → O ₂ + H ₂ ) × n => SiO

  In this specification, when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface”. In other words, it may be called a wafer including a predetermined layer or film formed on the surface. In addition, when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.

  Therefore, in the present specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas directly to the surface (exposed surface) of the wafer itself”. , It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) directly on the surface (exposed surface) of the wafer itself”. This means that a predetermined layer (or film) is formed on a layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate. There is a case.

  In addition, when the term “substrate” is used in this specification, it is the same as the case where the term “wafer” is used. In that case, in the above description, “wafer” is replaced with “substrate”. Good.

(Wafer charge and boat load)
A plurality of wafers 200 are loaded into the boat 217 (wafer charge). Thereafter, as shown in FIG. 1, the boat 217 that supports the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

(Pressure adjustment and temperature adjustment)
Vacuum exhaust (reduced pressure) is performed by the vacuum pump 246 so that the processing chamber 201, that is, the space where the wafer 200 exists, has a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. The vacuum pump 246 maintains a state in which it is always operated until at least the processing on the wafer 200 is completed. Further, the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to reach a desired temperature. At this time, the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. Heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed. Further, the rotation of the boat 217 and the wafers 200 by the rotation mechanism 267 is started. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed.

(Formation of SiO film)
Thereafter, the following steps 1 and 2 are sequentially executed.

[Step 1]
(HCDS gas supply)
In this step, HCDS gas is supplied to the wafer 200 in the processing chamber 201.

The valve 243a is opened and HCDS gas is allowed to flow into the gas supply pipe 232a. The flow rate of the HCDS gas is adjusted by the MFC 241a, supplied into the processing chamber 201 through the nozzle 249a, and exhausted from the exhaust pipe 231. At this time, the HCDS gas is supplied to the wafer 200. At the same time, the valve 243f is opened and N ₂ gas is allowed to flow into the gas supply pipe 232f. The flow rate of the N ₂ gas is adjusted by the MFC 241f, supplied into the processing chamber 201 together with the HCDS gas, and exhausted from the exhaust pipe 231.

Further, in order to prevent intrusion of HCDS gas into the nozzle 249b and the purge space 201a inside the cover 209a, the valves 243g and 243h are opened, and N ₂ gas is allowed to flow into the gas supply pipes 232g and 232h. The N ₂ gas is supplied into the processing chamber 201 through the gas supply pipes 232b and 232e, the nozzles 249b and 249e, and the purge space 201a, and is exhausted from the exhaust pipe 231.

  At this time, the APC valve 244 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, 1 to 4000 Pa, preferably 67 to 2666 Pa, and more preferably 133 to 1333 Pa.

The supply flow rate of the HCDS gas controlled by the MFC 241a is, for example, 1 to 2000 sccm, preferably 10 to 1000 sccm. The supply flow rate of the N ₂ gas controlled by the MFCs 241f to 241h is, for example, a flow rate in the range of 100 to 10000 sccm. The time for supplying the HCDS gas to the wafer 200, that is, the gas supply time (irradiation time) is, for example, 1 to 120 seconds, preferably 1 to 60 seconds.

  The temperature of the heater 207 is set such that the temperature of the wafer 200 is, for example, in the range of 250 to 700 ° C., preferably 300 to 650 ° C., more preferably 350 to 600 ° C.

  When the temperature of the wafer 200 is less than 250 ° C., it is difficult for HCDS to be chemically adsorbed on the wafer 200, and a practical film formation rate may not be obtained. This can be eliminated by setting the temperature of the wafer 200 to 250 ° C. or higher. By setting the temperature of the wafer 200 to 300 ° C. or higher, further 350 ° C. or higher, HCDS can be more sufficiently adsorbed on the wafer 200 and a more sufficient film formation rate can be obtained.

  When the temperature of the wafer 200 exceeds 700 ° C., the CVD reaction becomes too strong (excessive gas phase reaction occurs), so that the film thickness uniformity tends to deteriorate and the control becomes difficult. When the temperature of the wafer 200 is set to 700 ° C. or lower, an appropriate gas phase reaction can be caused, so that deterioration in film thickness uniformity can be suppressed and control thereof is possible. In particular, when the temperature of the wafer 200 is set to 650 ° C. or lower, and further to 600 ° C. or lower, the surface reaction becomes dominant over the gas phase reaction, the film thickness uniformity is easily ensured, and the control thereof is facilitated.

  Therefore, the temperature of the wafer 200 is set to 250 to 700 ° C., preferably 300 to 650 ° C., more preferably 350 to 600 ° C.

  By supplying the HCDS gas to the wafer 200 under the above-described conditions, the first layer has, for example, Si containing Cl having a thickness of less than one atomic layer to several atomic layers on the outermost surface of the wafer 200. A containing layer is formed. The Si-containing layer containing Cl may be a Si layer containing Cl, an adsorption layer of HCDS, or both of them. The HCDS adsorption layer may be an HCDS physical adsorption layer, an HCDS chemical adsorption layer, or both of them.

  Here, a layer having a thickness of less than one atomic layer means an atomic layer formed discontinuously, and a layer having a thickness of one atomic layer means an atomic layer formed continuously. Means. A layer having a thickness of less than one molecular layer means a molecular layer formed discontinuously, and a layer having a thickness of one molecular layer means a molecular layer formed continuously. ing. The Si-containing layer containing Cl can include both a Si layer containing Cl and an adsorption layer of HCDS. However, as described above, the Si-containing layer containing Cl is expressed using expressions such as “one atomic layer” and “several atomic layer”.

  Under conditions where the HCDS gas undergoes self-decomposition (pyrolysis), that is, under conditions where a thermal decomposition reaction of the HCDS gas occurs, Si is deposited on the wafer 200 to form a Si layer containing Cl. Under the condition that the HCDS gas does not self-decompose (thermally decompose), that is, under the condition that the thermal decomposition reaction of the HCDS gas does not occur, the adsorption layer of HCDS is formed by adsorbing HCDS on the wafer 200. It is more preferable to form a Si layer containing Cl on the wafer 200 than to form an HCDS adsorption layer on the wafer 200 in that the film formation rate can be increased. Hereinafter, the Si-containing layer containing Cl is simply referred to as a Si-containing layer for convenience.

  When the thickness of the first layer exceeds several atomic layers, the modification effect in Step 2 described later does not reach the entire first layer. Moreover, the minimum value of the thickness of the first layer is less than one atomic layer. Accordingly, it is preferable that the thickness of the first layer be less than one atomic layer to several atomic layers. By setting the thickness of the first layer to 1 atomic layer or less, that is, 1 atomic layer or less than 1 atomic layer, the action of the reforming reaction in Step 2 described later can be relatively enhanced. The time required for the reforming reaction can be shortened. The time required for forming the first layer in Step 1 can also be shortened. As a result, the processing time per cycle can be shortened, and the total processing time can be shortened. That is, the film forming rate can be increased. Further, by controlling the thickness of the first layer to 1 atomic layer or less, it becomes possible to improve the controllability of film thickness uniformity.

(Residual gas removal)
After the first layer is formed, the valve 243a is closed and the supply of HCDS gas is stopped. At this time, while the APC valve 244 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the HCDS gas remaining in the processing chamber 201 or contributed to the formation of the first layer is treated with the processing chamber. Eliminate from within 201. At this time, the valves 243f to 243h remain open, and the supply of N ₂ gas into the processing chamber 201 is maintained. The N ₂ gas acts as a purge gas, which can enhance the effect of removing the gas remaining in the processing chamber 201 from the processing chamber 201.

At this time, the gas remaining in the processing chamber 201 may not be completely removed, and the inside of the processing chamber 201 may not be completely purged. If the amount of gas remaining in the processing chamber 201 is very small, there will be no adverse effect in the subsequent step 2. The flow rate of the N ₂ gas supplied into the processing chamber 201 does not need to be a large flow rate. For example, by supplying an amount equivalent to the volume of the reaction tube 203 (processing chamber 201), an adverse effect occurs in step 2. There can be no purging. Thus, by not completely purging the inside of the processing chamber 201, the purge time can be shortened and the throughput can be improved. The consumption of N ₂ gas can be suppressed to the minimum necessary.

As the source gas, in addition to HCDS gas, for example, dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas, monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, tetrachlorosilane, that is, silicon tetrachloride (SiCl ₄ , abbreviation) : STC) gas, trichlorosilane (SiHCl ₃ , abbreviation: TCS) gas, trisilane (Si ₃ H ₈ , abbreviation: TS) gas, disilane (Si ₂ H ₆ , abbreviation: DS) gas, monosilane (SiH ₄ , abbreviation: MS) gas, inorganic source gas, tetrakisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₄ , abbreviation: 4DMAS) gas, trisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₃ H, abbreviation: 3DMAS ) Gas, bisdiethylaminosilane (Si [N (C ₂ H ₅ ) ₂ ] ₂ H ₂ , an abbreviated name: BDEAS) gas, organic raw material gas such as bisteria butylaminosilane (SiH ₂ [NH (C ₄ H ₉ )] ₂ , abbreviated name: BTBAS) gas can be used.

As the inert gas, for example, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas can be used in addition to N ₂ gas.

[Step 2]
(O ₂ gas + H ₂ gas supply)
After step 1 is completed, O ₂ gas and H ₂ gas are separately supplied into the processing chamber 201, and these gases are mixed and reacted in the processing chamber 201.

In this step, the opening / closing control of the valves 243b, 243f to 243h is performed in the same procedure as the opening / closing control of the valves 243a, 243f to 243h in Step 1. The flow rate of the O ₂ gas that has flowed through the gas supply pipe 232b is adjusted by the MFC 241b and is supplied into the processing chamber 201 through the nozzle 249b. At this time, the valve 243c is simultaneously opened. The flow rate of the H ₂ gas flowing through the gas supply pipe 232c is adjusted by the MFC 241c, and is supplied into the processing chamber 201 through the gas supply pipe 232a and the nozzle 249a. O ₂ gas and H ₂ gas are mixed and reacted for the first time in the processing chamber 201, and then exhausted from the exhaust pipe 231.

  At this time, the APC valve 244 is appropriately adjusted, and the pressure in the processing chamber 201 is set to a pressure lower than atmospheric pressure, for example, in the range of 1 to 1333 Pa.

The supply flow rate of the O ₂ gas controlled by the MFC 241b is, for example, a flow rate in the range of 1000 to 10,000 sccm. The supply flow rate of H ₂ gas controlled by the MFC 241c is, for example, a flow rate in the range of 1000 to 10000 sccm. The time for supplying the O ₂ gas and the H ₂ gas to the wafer 200, that is, the gas supply time (irradiation time) is, for example, a time within the range of 1 to 120 seconds.

  Other processing conditions are the same as the processing conditions in step 1.

By supplying O ₂ gas and H ₂ gas into the process chamber 201 under the conditions described above, the O ₂ gas and H ₂ gas is thermally activated in a non-plasma in the heated reduced pressure atmosphere (excitation) It is reacted with, whereby water (H 2 _O) free of oxidizing species containing oxygen, such as atomic oxygen (O) is generated. Then, an oxidation treatment is performed on the first layer (Si-containing layer) formed on the wafer 200 in Step 1 mainly by this oxidizing species. Since the energy of this oxidized species is higher than the binding energy of Si—Cl, Si—H, etc. contained in the Si-containing layer, the energy of this oxidized species is given to the Si-containing layer, so that Si-Cl, Si-H bonds, etc. contained are cut off. H, Cl, etc., from which the bond with Si has been broken is removed from the film and discharged as Cl ₂ , HCl, etc. Further, the remaining Si bonds due to the bond with H, Cl, etc. are combined with O contained in the oxidized species to form Si—O bonds. In this way, the Si-containing layer is changed (modified) into the second layer, that is, the SiO layer having a low content of impurities such as Cl. According to this oxidation treatment, the oxidizing power can be greatly improved as compared with the case of supplying O ₂ gas alone or the case of supplying water vapor (H ₂ O). That is, by adding H ₂ gas to O ₂ gas in a reduced pressure atmosphere, a significant improvement in oxidizing power can be obtained as compared with the case of supplying O ₂ gas alone or supplying H ₂ O gas.

(Residual gas removal)
After changing the first layer (Si-containing layer) to the second layer (SiO layer), the valves 243b and 243c are closed, and the supply of O ₂ gas and H ₂ gas is stopped. Then, O ₂ gas, H ₂ gas, and reaction byproducts remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing procedure and processing conditions as in Step 1. At this time, it is the same as in step 1 that the gas remaining in the processing chamber 201 does not have to be completely discharged.

As the O-containing gas, ozone (O ₃ ) gas or the like can be used in addition to O ₂ gas. As the H-containing gas, deuterium (D ₂ ) gas or the like can be used in addition to H ₂ gas. When an aminosilane source gas such as 4DMAS gas or 3DMAS gas is used as the source gas, if O ₃ gas is used as the O-containing gas, sufficient (similar) film formation can be achieved without using an H-containing gas. Films can also be formed at a rate. As the inert gas, for example, various rare gases exemplified in Step 1 can be used in addition to N ₂ gas.

(Performed times)
An SiO film having a predetermined film thickness can be formed on the wafer 200 by performing the above-described steps 1 and 2 non-simultaneously, that is, by performing a cycle (n times) without synchronizing them. The above cycle is preferably repeated multiple times. That is, it is formed by stacking the second layer (SiO layer) by making the thickness of the second layer (SiO layer) formed when the above cycle is performed once smaller than the desired film thickness. It is preferable to repeat the above cycle a plurality of times until the thickness of the SiO film to be obtained reaches a desired thickness.

(Purge and return to atmospheric pressure)
After the formation of the SiO film is completed, the valves 243f to 243h are opened, N ₂ gas is supplied into the processing chamber 201 from each of the gas supply pipes 232f to 232h, and exhausted from the exhaust pipe 231. N ₂ gas acts as a purge gas. Thereby, the inside of the processing chamber 201 is purged, and the gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

(Boat unload and wafer discharge)
The seal cap 219 is lowered by the boat elevator 115 and the lower end of the manifold 209 is opened. Then, the processed wafers 200 are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the boat 217 (boat unloading). The processed wafer 200 is taken out from the boat 217 (wafer discharge).

(3) Cleaning process When the above-described film forming process is performed, a thin film such as a SiO film is formed on the inner wall of the reaction tube 203, the surfaces of the nozzles 249a and 249b, the surface of the cover 209a, the surface of the boat 217, the upper surface of the seal cap 219, etc. Accumulated sediment containing. That is, the deposit containing O adheres to the surface of the member in the heated processing chamber 201 and accumulates. Even if the purge space 201a is purged with N ₂ gas during the film forming process, a small amount of HCDS gas, O ₂ gas, or H ₂ gas may enter the purge space 201a. Therefore, deposits containing O may accumulate on the surface of the member in the purge space 201a, for example, the inner wall of the manifold 209 or the inner surface of the cover 209a. Therefore, a cleaning process is performed before the amount of these deposits (thickness of the deposits), that is, the accumulated film thickness reaches a predetermined amount (thickness) before the deposits are peeled off or dropped. .

In the cleaning process shown in FIG.
An HF etching step for supplying at least HF gas into the processing container (processing chamber 201);
While stopping the supply of the HF gas into the processing chamber 201, and _{F 2} purge step for supplying an _{F 2} gas into the process chamber 201,
In the HF etching step, when the moisture generated in the processing chamber 201 is present alone, this is performed at a temperature at which the moisture remains in the processing chamber 201.

  Hereinafter, an example of the cleaning process in the present embodiment will be described with reference to FIG. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

(Boat Road)
An empty boat 217, that is, a boat 217 not loaded with wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

(Pressure adjustment and temperature adjustment)
The inside of the processing chamber 201 is evacuated by a vacuum pump 246 so that a predetermined etching pressure described later is obtained. The vacuum pump 246 keeps operating at least until at least the F ₂ purge step is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 as necessary so as to have a predetermined etching temperature described later. Note that the HF etching step and the F ₂ purge step may be performed at room temperature or a temperature lower than that, as will be described later. Therefore, the heater 207 may not be energized. Further, the rotation of the boat 217 by the rotation mechanism 267 is started. The rotation of the boat 217 is continuously performed at least until the F ₂ purge step is completed. However, the boat 217 may not be rotated.

(HF etching step)
In this step, at least HF gas is supplied into the processing chamber 201 after the processing for forming the SiO film on the wafer 200, that is, into the processing chamber 201 to which the deposit containing the O-containing film is attached.

The valves 243d and 243e are opened, and HF gas is allowed to flow into the gas supply pipes 232d and 232e, respectively. The flow rate of the HF gas is adjusted by the MFCs 241d and 241e, and the HF gas is supplied into the processing chamber 201 through the gas supply pipe 232b, the nozzles 249b and 249e, and the purge space 201a. At this time, N ₂ gas may be supplied from the gas supply pipes 232g and 232h, and the HF gas may be diluted in the gas supply pipes 232b and 232e, respectively. By controlling the supply flow rate of the N ₂ gas, the concentration of HF gas supplied into the processing chamber 201 can be controlled. Further, in order to prevent HF gas from entering the nozzle 249a, the valve 243f is opened, and N ₂ gas is allowed to flow into the gas supply pipe 232f. The N ₂ gas is supplied into the processing chamber 201 through the gas supply pipe 232a and the nozzle 249a, and is exhausted from the exhaust pipe 231.

When the HF gas supplied into the processing chamber 201 passes through the processing chamber 201 and is exhausted from the exhaust pipe 231, the surface of a member in the processing chamber 201, for example, the inner wall of the reaction tube 203, the nozzle 249a, It contacts the surface of 249b, the surface of the boat 217, the outer and inner surfaces of the cover 209a, the inner wall of the manifold 209, the upper surface of the seal cap 219, and the like. At this time, the deposit containing the O-containing film attached to the member in the processing chamber 201 is removed by the thermochemical reaction. That is, the deposit is removed by the etching reaction between HF and the deposit. Note that when the etching reaction proceeds, moisture (H ₂ O) is generated in the processing chamber 201 by combining O contained in the deposit (SiO) and H contained in HF. It becomes. Further, Si contained in the deposit and F contained in HF are combined to generate SiF ₄ or the like in the processing chamber 201. In this way, by supplying HF gas into the processing chamber 201 to which the deposit containing the O-containing film is attached, the above-described deposit etching reaction can be advanced in a non-plasma atmosphere.

  In the HF etching step, the supply flow rate of the HF gas controlled by the MFCs 241d and 241e is set to a flow rate within a range of 1000 to 8000 sccm, preferably 2000 to 8000 sccm, respectively.

  Further, the APC valve 244 is appropriately adjusted, and the pressure in the processing chamber 201 is set to a pressure (etching pressure) within a range of 133 to 53329 Pa (1 to 400 Torr), preferably 667 to 39997 Pa (5 to 300 Torr), for example. .

  The temperature of the heater 207 is such that the temperature in the processing chamber 201 is, for example, 0-100 ° C., preferably room temperature (25 ° C.)-50 ° C., more preferably 30-50 ° C. (etching temperature). Set the temperature so that

  In order to set the temperature in the processing chamber 201 to less than 0 ° C., it is necessary to provide a large cooling mechanism for cooling the inside of the processing chamber 201 to this temperature. In some cases, it may be complicated. This can be solved by setting the temperature in the processing chamber 201 to 0 ° C. or higher. By setting the temperature in the processing chamber 201 to room temperature or higher, preferably 30 ° C. or higher, there is no need to provide a simple cooling mechanism such as a blower to cool the processing chamber 201, and the manufacturing cost of the substrate processing apparatus is eliminated. And temperature control can be simplified.

  When the temperature in the processing chamber 201 exceeds 100 ° C., it is difficult for HF to be adsorbed on the surface of the members in the processing chamber 201, and it may be difficult to etch the deposit. This can be solved by setting the temperature in the processing chamber 201 to 100 ° C. or lower. By setting the temperature in the processing chamber 201 to 50 ° C. or less, the etching reaction by HF can surely proceed.

In this way, the HF etching step is performed under conditions such that when moisture (H ₂ O) generated in the processing chamber 201 exists alone in the processing chamber 201, the moisture remains in the processing chamber 201, for example, The temperature is lower than the boiling point of the water, and the pressure is such that the water does not boil.

In the HF etching step, it is preferable to supply a fluorine-based gas containing H such as HF gas into the processing chamber 201. This is because when the inventors supply fluorine (F ₂ ) gas or chlorine fluoride (ClF ₃ ) gas instead of HF gas into the processing chamber 201 in the HF etching step, the etching reaction described above proceeds. It has been confirmed that it will be difficult. This is because it is necessary to use a fluorine-based gas containing H such as HF gas in order to etch a deposit containing SiO as a main component, that is, a deposit containing an O-containing film. ₂ gas and ClF ₃ gas are considered to be a factor because they are fluorine-based gas not containing H.

As the inert gas, for example, various rare gases exemplified in the above-described film forming process can be used in addition to the N ₂ gas.

_{(F 2} purge step)
When the HF etching step is performed, as described above, moisture, SiF _{4 and the} like are generated in the processing chamber 201. Moisture generated in the processing chamber 201 coexists with the HF gas remaining in the processing chamber 201, thereby causing the metal member in the processing chamber 201 to corrode and thereby generating particles. Therefore, in this embodiment, after the HF etching step is completed, in a state of stopping the supply of the HF gas into the processing chamber 201, performs F ₂ purge step for supplying an F ₂ gas into the process chamber 201.

In this step, the valves 243d and 243e are closed and the supply of HF gas into the processing chamber 201 is stopped while the APC valve 244 is kept open, that is, while the exhausting of the processing chamber 201 is continued. At the same time as the supply of HF gas is stopped, the supply of F ₂ gas into the processing chamber 201 is started. That is, the valves 243i and 243j are opened at the same time as the valves 243d and 243e are closed.

When the inside of the processing chamber 201 is exhausted after performing the HF etching step, the temperature inside the processing chamber 201 is maintained at the above-described etching temperature (0 to 100 ° C.) unless the F ₂ gas is supplied into the processing chamber 201. As it is, it is difficult to sufficiently and efficiently remove moisture (H ₂ O) from the processing chamber 201. This is because the above-described etching temperature is lower than the boiling point of water (100 ° C.), and when moisture exists alone in the processing chamber 201, the moisture is in a liquid phase state in the processing chamber 201. This is because the temperature is likely to remain at a temperature, that is, a temperature at which this moisture remains in the processing chamber 201. Under this temperature, it is difficult for water to evaporate alone, and even if part of it evaporates, it tends to remain in the processing chamber 201 in a liquid state. In addition, moisture tends to remain in the low temperature part. In this state, it is difficult to remove moisture even if the processing chamber 201 is evacuated, purged with an inert gas such as N ₂ gas, or repeated. On the other hand, when the inside of the processing chamber 201 is evacuated, even if the temperature in the processing chamber 201 is maintained at the above-described etching temperature by supplying F ₂ gas into the processing chamber 201, moisture is discharged from the inside of the processing chamber 201. Can be efficiently removed. This is because by supplying F ₂ gas into the processing chamber 201, the moisture remaining in the processing chamber 201 can react with F ₂ , thereby remaining in the processing chamber 201. This is because moisture can be converted into a substance such as HF or O ₂ that can be easily removed from the processing chamber 201. By utilizing this reaction, even if the temperature in the processing chamber 201 is maintained at the above-described etching temperature, moisture can be efficiently removed from the processing chamber 201. That is, the temperature inside the processing chamber 201 is higher than the above-described etching temperature, for example, a temperature at which the moisture does not remain in the processing chamber 201 when water generated in the processing chamber 201 alone exists (for example, Water can be efficiently removed from the processing chamber 201 without heating to a temperature exceeding the boiling point of the water.

The F ₂ purge step is preferably performed continuously without providing an intermittent period between the F ₂ purge step and the HF etching step. For example, after performing the HF etching step, the F ₂ purge step is performed without purging and evacuating with an inert gas in the processing chamber 201 and without supplying moisture or the like into the processing chamber 201 from the outside. It is preferred to do so. That is, the F ₂ purge step is preferably started immediately after the HF etching step, that is, almost simultaneously with the end of the HF etching step. Further, at this time, the F ₂ purge is performed without heating the inside of the processing chamber 201 so that the water generated in the processing chamber 201 alone does not remain in the processing chamber 201. It is preferred to perform the steps. By doing so, the procedure of the cleaning process can be simplified. In addition, after the HF etching step is performed, the time until moisture removal from the processing chamber 201 is completed can be shortened. As a result, it is easy to shorten the time required for the entire cleaning process. As will be described later, the end point of the etching reaction in the processing chamber 201 can be precisely controlled.

In the F ₂ purge step, the APC valve 244 is appropriately adjusted, and the pressure in the processing chamber 201 is set to, for example, 67 to 53329 Pa (0.5 Torr to 400 Torr), preferably 67 to 26664 Pa (0.5 Torr to 200 Torr). Pressure.

The supply flow rate of the F ₂ gas controlled by the MFCs 241i and 241j is, for example, a flow rate in the range of 500 to 10000 sccm, preferably 1000 to 5000 sccm.

  Other processing conditions are the same as the processing conditions of the HF etching step.

As described above, the F ₂ purge step is similar to the HF etching step in the case where water alone exists in the processing chamber 201, such as the condition that the water remains in the processing chamber 201, for example, The temperature is lower than the boiling point, and the pressure is such that the water does not boil.

(Purge and return to atmospheric pressure)
When moisture or the like is removed from the processing chamber 201, the valves 243i and 243j are closed, and the supply of F ₂ gas into the processing chamber 201 is stopped. Then, the valves 243f to 243h are opened, N ₂ gas is caused to flow into the processing chamber 201 from each of the gas supply pipes 232f to 232h, and the exhaust pipe 231 is exhausted. N ₂ gas acts as a purge gas. Thereby, the inside of the processing chamber 201 is purged. At this time, the process chamber 201 may be purged intermittently (cycle purge) by repeatedly opening and closing the valves 243f to 243h. Thereafter, the atmosphere in the processing chamber 201 is replaced with N ₂ gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

(Boat unloading)
The seal cap 219 is lowered by the boat elevator 115 and the lower end of the manifold 209 is opened. Then, an empty boat 217 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). When the amount of deposits adhering to the inner walls of the nozzles 249a and 249b is large, the nozzles 249a and 249b are replaced as necessary. When these series of steps are completed, the above-described film forming process is resumed.

(4) Effects according to this embodiment According to this embodiment, one or more of the following effects can be obtained.

(A) After performing a film forming process for forming a SiO film on the wafer 200, an HF etching step for supplying at least HF gas into the processing chamber 201 is performed, so that it adheres to the surface of the member in the processing chamber 201. Deposits can be removed. This makes it possible to improve the quality of the film forming process performed thereafter.

(B) Since the deposit can be etched in a non-plasma environment, the configuration of the substrate processing apparatus can be simplified, and the manufacturing cost and maintenance cost can be reduced. In addition, it is possible to avoid plasma damage to members in the processing chamber 201.

(C) After performing the HF etching step, it is possible to remove moisture from the processing chamber 201 by performing the F ₂ purge step. Thereby, corrosion of the metal member in the processing chamber 201 due to residual moisture can be suppressed, and generation of particles in the processing chamber 201 due to corrosion can be avoided.

(D) In the F ₂ purge step, by supplying F ₂ gas into the processing chamber 201, it is possible to increase the efficiency of removing moisture from the processing chamber 201. Thereby, the time required for the F ₂ purge step, that is, the entire cleaning process can be shortened, and the downtime of the substrate processing apparatus can be shortened.

(E) In the HF etching step and the F ₂ purge step, that is, in a state where HF gas and moisture remain in the processing chamber 201, the temperature in the processing chamber 201 is set to the above-described low temperature zone (0 to 100 ° C.). Since it is held within the range, corrosion of the metal member in the processing chamber 201 can be more reliably suppressed. On the other hand, during or after the HF etching step, that is, in a state where HF gas or moisture remains in the processing chamber 201, the processing chamber 201 has a temperature of about 800 ° C., for example. When the inside of 201 is heated, the reaction between the HF gas remaining in the processing chamber 201 and moisture is promoted, and the metal member in the processing chamber 201 may be corroded.

(F) The etching reaction in the processing chamber 201 is accurately stopped after the HF etching step by continuously performing the HF etching step and the F ₂ purge step without providing an intermittent period therebetween. It becomes possible. This is because moisture (H ₂ O) needs to be present in the processing chamber 201 in order to advance the etching reaction of the deposit by HF gas. As in the present embodiment, the HF etching step and the F ₂ purge step are continuously performed without providing an intermittent period between them, so that moisture remaining in the processing chamber 201 can be reduced to HF or O 2. ₂ can be quickly removed from the processing chamber 201. As a result, the etching reaction in the processing chamber 201 can be quickly stopped. That is, according to the present embodiment, it is possible to precisely control the end point of the etching reaction, which makes it easy to avoid over-etching or the like of the members in the processing chamber 201.

(G) By performing the HF etching step and the F ₂ purge step continuously without providing an intermittent period between them, the procedure of the cleaning process can be simplified. In addition, after the HF etching step is performed, the time until moisture removal from the process 201 is completed can be shortened. As a result, it is easy to shorten the time required for the entire cleaning process.

(H) By performing the cleaning process in the above-described temperature range, the operation such as nozzle replacement performed after the cleaning process is quickly started without performing a step of changing the temperature in the processing chamber 201 (for example, lowering the temperature). Is possible. As a result, the downtime of the substrate processing apparatus can be shortened.

(I) The above effect is obtained when a gas other than HCDS gas is used as the source gas, when a gas other than O ₂ gas is used as the O-containing gas, or when a gas other than H ₂ gas is used as the H-containing gas. Can be obtained as well.

(5) Modification Example of Cleaning Process The cleaning process in the present embodiment is not limited to the above-described aspect, and can be changed as in the following modification example.

(Modification 1)
As in the cleaning sequence shown in FIG. 6A, in the F ₂ purge step, the supply of F ₂ gas into the processing chamber 201 may be performed intermittently. Also in this modification, it is preferable to perform the HF etching step and the F ₂ purge step continuously without providing an intermittent period. Also in this modification, the same effect as the cleaning sequence shown in FIG. 5 can be obtained. In addition, the amount of F ₂ gas used can be appropriately suppressed, and the cost of the cleaning process can be reduced.

(Modification 2)
As in the cleaning sequence shown in FIG. 6B, in the HF etching step, the supply of HF gas into the processing chamber 201 may be performed intermittently. Also in this modification, it is preferable to perform the HF etching step and the F ₂ purge step continuously without providing an intermittent period. Also in this modification, the same effect as the cleaning sequence shown in FIG. 5 can be obtained. In addition, by intermittently supplying the HF gas, the amount of moisture and SiF ₄ in the processing chamber 201 can be appropriately controlled, and an environment in which an etching reaction easily proceeds can be prepared. Further, by intermittently supplying the HF gas, a pressure fluctuation can be generated in the processing chamber 201, and an impact accompanying the pressure fluctuation can be given to the deposit. Thereby, a crack, peeling, etc. are produced in a deposit and it becomes possible to advance etching of a deposit efficiently. Further, by intermittently supplying the HF gas, the amount of HF gas used can be appropriately suppressed, and the cost of the cleaning process can be reduced.

(Modification 3)
As cleaning sequence shown in FIG. 6 (c), the HF etching step, intermittently performs the supply of the HF gas into the processing chamber 201, the F ₂ purge step, the F ₂ gas into the processing chamber 201 Supply may be performed intermittently. Also in this modification, it is preferable to perform the HF etching step and the F ₂ purge step continuously without providing an intermittent period. Also in this modification, the same effect as the cleaning sequence shown in FIG. 5 and the above-described modification can be obtained.

<Other Embodiments of the Present Invention>
The embodiment of the present invention has been specifically described above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

For example, in the above-described embodiment, an example in which the HF etching step and the F ₂ purge step are continuously performed without providing an intermittent period has been described, but the present invention is not limited to such an embodiment. That is, even if an intermittent period is provided between the HF etching step and the F ₂ purge step, the same effect as in the above-described embodiment can be obtained. However, from the viewpoint of simplifying the procedure of the cleaning process and shortening the required time, it is preferable to perform the HF etching step and the F ₂ purge step continuously without providing an intermittent period. Also, from the viewpoint of precisely controlling the end point of the etching reaction, it is preferable to perform the HF etching step and the F ₂ purge step continuously without providing an intermittent period.

Further, for example, in the above-described embodiment, the example in which the HF etching step and the F ₂ purge step are performed at the same temperature (for example, at room temperature) has been described, but the present invention is not limited to such an embodiment. That is, the HF etching step and the F ₂ purge step may be performed at different temperatures.

For example, the HF etching step may be performed at room temperature, and the F ₂ purge step may be performed at a temperature higher than room temperature (for example, 30 to 50 ° C.). In this case, it is preferable in that the efficiency of removing water from the processing chamber 201 in the F ₂ purge step can be further increased. However, when the HF etching step and the F ₂ purge step are performed at the same temperature (for example, at room temperature), the step of changing the temperature in the processing chamber 201 (for example, increasing the temperature) is performed between these steps. This is preferable in that it does not need to be performed. That is, it is preferable in that the procedure of the cleaning process can be simplified and the required time can be easily shortened.

  Moreover, although the above-mentioned embodiment demonstrated the example which supplies HF gas using the nozzle 249b different from the nozzle 249a which supplies HCDS gas, this invention is not limited to such an aspect. Even when the HF gas is supplied using the nozzle 249a, the same effects as those of the above-described embodiment can be obtained. However, for the reason described below, it is preferable to supply the HF gas using a nozzle different from the nozzle 249a.

This is because when the film forming process is performed, deposits mainly composed of SiO adhere to the surface of the members in the processing chamber 201, whereas deposits mainly composed of Si are deposited in the nozzle 249a. It will adhere. This is because HCDS gas and H ₂ gas flow into the nozzle 249a, but O ₂ gas does not flow. Deposits containing Si as a main component are more difficult to remove with HF than deposits containing SiO as a main component. Therefore, even if the HF gas is flowed using the nozzle 249a in the HF etching step, it is difficult to remove the deposit attached to the inner wall of the nozzle 249a.

  In addition, when HF gas is allowed to flow using the nozzle 249a in the HF etching step, HF may enter between the deposit attached to the inner wall of the nozzle 249a and the inner wall of the nozzle 249a, and the combined state of the deposit and the inner wall. May become unstable (become brittle). When the film forming process is performed again in this state, when HCDS gas or the like is flowed into the nozzle 249a, the deposit attached to the inner wall of the nozzle 249a may be partially peeled off to become particles.

For these reasons, in the above-described embodiment, the HF gas is supplied using the nozzle 249b that is different from the nozzle 249a that supplies the HCDS gas. In addition, from the above, in the above-described embodiment, in the HF etching step, N ₂ gas is supplied into the nozzle 249a to prevent the HF gas from entering the nozzle 249a.

Note that it is not necessary to clean the inside of the nozzle 249a, that is, remove the deposit mainly composed of Si adhering to the inner wall of the nozzle 249a. The nozzle 249a may be replaced when the accumulated film thickness reaches a predetermined thickness, for example, 4 to 5 μm, before the particles start to peel off and the particles start to be generated. Further, in the film formation process, only O ₂ gas flows into the nozzle 249b, so that deposits do not adhere to the inner wall of the nozzle 249b, or even if it adheres, it is caused by the HCDS gas slightly entering the nozzle 249b. It is. Therefore, the amount of adhesion is also small. Therefore, it is not necessary to replace the nozzle 249b. However, when replacing the nozzle 249a, the nozzle 249b may also be replaced.

In the above-described embodiment, the example in which the SiO film is formed on the wafer 200 under the high temperature condition using the HCDS gas, the O ₂ gas, and the H ₂ gas has been described, but the present invention is not limited to such an aspect. For example, in the present invention, when an SiO film is formed on the wafer 200 under an intermediate temperature condition using an aminosilane source gas such as 3DMAS gas or BTBAS gas, an amine catalyst such as pyridine (C ₅ H ₅ N) is used. The present invention can be suitably applied even when an SiO film is formed on the wafer 200 under low temperature conditions. Further, for example, the present invention can be suitably applied to the case where an SiO film is formed on the wafer 200 under a low temperature condition using an aminosilane source gas such as BTBAS gas and plasma-excited O ₂ gas. That is, the present invention can be suitably applied even when, for example, the inside of a processing container in which a process for forming a SiO film on the wafer 200 is performed by the following film forming sequence is performed.

(3DMAS → O ₃ ) × n => SiO

(HCDS + Pyridine → H ₂ O + Pidirine) × n ⇒ SiO

(BTBAS → O ₂ plasma) × n ⇒ SiO

  Further, for example, the present invention is not limited to the case where the SiO film is formed on the wafer 200, but a silicon oxycarbonitride film (SiOCN film), a silicon oxycarbide film (SiOC film), a silicon oxynitride film ( The present invention can also be suitably applied when forming a Si-based oxide film such as a SiON film. That is, the present invention can also be suitably applied to the case where the inside of a processing container in which a process for forming a Si-based oxide film other than the SiO film is performed on the wafer 200 is cleaned.

  For example, the present invention is not limited to the case where the Si-based oxide film is formed on the wafer 200 but can be suitably applied to the case where, for example, an oxide film containing a metal element is formed on the wafer 200. That is, the present invention can be suitably applied to the case where the inside of a processing container in which a metal oxide film is formed on the wafer 200 is cleaned.

  As described above, the present invention can be suitably applied to the case where the processing chamber is cleaned by removing deposits including a semiconductor oxide film such as a Si oxide film or a metal oxide film. Also in these cases, the processing procedure and processing conditions of the cleaning process can be the same processing procedure and processing conditions as in the above-described embodiment. Even in these cases, the same effects as those of the above-described embodiment and each modification can be obtained.

  Process recipes used for film formation of these various thin films (programs describing the film forming process procedures and processing conditions), and cleaning recipes used for removing deposits containing these various thin films (cleaning process) The program that describes the processing procedure and processing conditions) is individually applied according to the contents of the film forming process and the cleaning process (formation or film type, composition ratio, film quality, film thickness, etc. of the thin film to be removed). It is preferable to prepare (multiple prepared). And when starting various processes, it is preferable to select an appropriate recipe suitably from a some recipe according to the content of a process. Specifically, a plurality of recipes individually prepared according to processing contents are stored in a storage device 121c included in the substrate processing apparatus via an electric communication line or a recording medium (external storage device 123) on which the recipe is recorded. It is preferable to store (install) in advance. When starting the film forming process or the cleaning process, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate recipe from a plurality of recipes stored in the storage device 121c according to the processing content. Is preferred. With this configuration, thin films having various film types, composition ratios, film qualities, and film thicknesses can be formed and removed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce an operator's operation burden (such as an input burden of a processing procedure and a processing condition), and it is possible to quickly start various processes while avoiding an operation error.

  The above-described process recipe and cleaning recipe are not limited to newly created, and may be prepared by changing an existing recipe that has already been installed in the substrate processing apparatus, for example. When changing the recipe, the changed recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded. Further, an existing recipe that has already been installed in the substrate processing apparatus may be directly changed by operating the input / output device 122 provided in the existing substrate processing apparatus.

  In the above-described embodiment, an example in which a film is formed using a batch-type substrate processing apparatus that processes a plurality of substrates at one time has been described. The present invention is not limited to the above-described embodiment, and can be suitably applied to a case where a film is formed using, for example, a single-wafer type substrate processing apparatus that processes one or several substrates at a time. In the above-described embodiment, an example in which a film is formed using a substrate processing apparatus having a hot wall type processing furnace has been described. The present invention is not limited to the above-described embodiment, and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a cold wall type processing furnace. Also in these cases, the processing procedure and processing conditions can be the same processing procedure and processing conditions as in the above-described embodiment, for example.

For example, the present invention can be suitably applied to the case where a film is formed using a substrate processing apparatus including the processing furnace 302 illustrated in FIG. The processing furnace 302 includes a processing container 303 that forms the processing chamber 301, a shower head 303s as a gas supply unit that supplies gas into the processing chamber 301 in a shower shape, and one or several wafers 200 in a horizontal posture. A support base 317 for supporting, a rotating shaft 355 for supporting the support base 317 from below, and a heater 307 provided on the support base 317 are provided. Gas supply ports 332a and 332b are connected to the inlet (gas inlet) of the shower head 303s. The gas supply port 332a is connected to a gas supply system similar to the source gas supply system and the H-containing gas supply system of the above-described embodiment. A gas supply system similar to the O-containing gas supply system, the HF gas supply system, and the F ₂ gas supply system of the above-described embodiment is connected to the gas supply port 332b. A gas dispersion plate that supplies gas into the processing chamber 301 in a shower shape is provided at the outlet (gas outlet) of the shower head 303s. The shower head 303 s is provided at a position facing (facing) the surface of the wafer 200 carried into the processing chamber 301. The processing vessel 303 is provided with an exhaust port 331 for exhausting the inside of the processing chamber 301. An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 331.

Further, for example, the present invention can be suitably applied to the case where a film is formed using a substrate processing apparatus including the processing furnace 402 shown in FIG. The processing furnace 402 includes a processing container 403 that forms a processing chamber 401, a support base 417 that supports one or several wafers 200 in a horizontal position, a rotating shaft 455 that supports the support base 417 from below, and a processing container. A lamp heater 407 that irradiates light toward the wafer 200 in the 403 and a quartz window 403w that transmits light from the lamp heater 407 are provided. Gas supply ports 432 a and 432 b are connected to the processing container 403. The gas supply port 432a is connected to a gas supply system similar to the source gas supply system and the H-containing gas supply system of the above-described embodiment. A gas supply system similar to the O-containing gas supply system, the HF gas supply system, and the F ₂ gas supply system of the above-described embodiment is connected to the gas supply port 432b. The gas supply ports 432a and 432b are respectively provided on the side of the end portion of the wafer 200 loaded into the processing chamber 401, that is, at a position not facing the surface of the wafer 200 loaded into the processing chamber 401. The processing container 403 is provided with an exhaust port 431 for exhausting the inside of the processing chamber 401. An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 431.

  Even when these substrate processing apparatuses are used, the film forming process and the cleaning process can be performed under the same sequence and processing conditions as those in the above-described embodiments and modifications, and the same effects as those in the above-described embodiments and modifications. Is obtained.

  In addition, the above-described embodiments and modifications can be used in appropriate combination. Further, the processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example.

  Hereinafter, experimental results supporting the effects obtained in the above-described embodiments and modifications will be described.

As an example, a film forming process for forming SiO films on a plurality of wafers was performed by the film forming sequence shown in FIG. The HCDS gas as raw material gases, as the O-containing gas and _{O 2} gas, the H-containing gas with _{H 2} gas. The processing conditions of the film forming process were set within the processing condition range described in the above embodiment. Thereafter, an HF etching step (HF Etching) and an F ₂ purge step (F ₂ PRG) for removing deposits adhering to the surface of the member in the processing container were performed by the cleaning sequence shown in FIG. The cleaning temperature was room temperature (RT). The other processing conditions were those within the processing condition range described in the above embodiment. Thereafter, the inside of the processing container was cycle purged (N ₂ PRG / VAC / N ₂ PRG / VAC), and then the nozzle provided in the processing container was replaced (Nozzle change).

As a comparative example, using the substrate processing apparatus in the above-described embodiment, a film forming process for forming SiO films on a plurality of wafers was performed by the film forming sequence shown in FIG. The processing procedure and processing conditions were the same as those in the example. Thereafter, an HF etching step (HF Etching) was performed according to the same processing procedure and processing conditions as in the example. Then, without performing the F ₂ purge step, the temperature is raised to 800 ° C. (Heating) while exhausting the inside of the processing container, and the inside of the processing container is cycle purged (N ₂ PRG / VAC / N ₂ PRG / VAC). Water was removed from the processing container. Then, after the inside of the processing container was cooled to room temperature, the nozzle provided in the processing container was replaced (Nozzle change).

  FIG. 7A is a diagram illustrating a process until the cleaning and cycle purge in the processing container are completed in the embodiment. FIG. 7B is a diagram illustrating the cleaning and cycle purge in the processing container in the comparative example. It is a figure which shows progress until is completed. Further, FIG. 8A is a diagram showing a process until the replacement of the nozzle provided in the processing container in the embodiment is completed, and FIG. 8B is a diagram in the processing container in the comparative example. It is a figure which shows progress until replacement | exchange of the provided nozzle is completed. In each figure, the horizontal axis indicates the elapsed time, and the vertical axis indicates the temperature in the processing container. In both figures, the film forming process is not shown.

  According to FIG. 7A and FIG. 7B, in the embodiment, moisture removal from the processing container can be completed more quickly than in the comparative example. As a result, the cycle from the start of the HF etching step can be improved. It can be seen that the time required to complete the purge can be shortened. Further, according to FIGS. 8A and 8B, the embodiment can start the nozzle replacement more quickly than the comparative example, and as a result, from the start of the HF etching step to the completion of the nozzle replacement. It can be seen that the required time can be shortened. That is, it can be seen that the downtime of the substrate processing apparatus can be shortened in the example as compared with the comparative example.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A method for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
In the step (a), there is provided a cleaning method in which, when water generated in the processing container alone is present, the temperature is such that the water remains in the processing container.

(Appendix 2)
The method according to appendix 1, preferably,
The step (a) and the step (b) are continuously performed without providing an intermittent period.

(Appendix 3)
The method according to appendix 1 or 2, preferably,
The step (a) and the step (b) are performed at the same temperature.

(Appendix 4)
The method according to appendix 1 or 2, preferably,
The step (a) and the step (b) are performed at room temperature.

(Appendix 5)
The method according to appendix 1 or 2, preferably,
The step (a) and the step (b) are performed at different temperatures.

(Appendix 6)
The method according to any one of appendices 1 to 5, preferably,
Immediately after the step (a), the step (b) is performed.

(Appendix 7)
The method according to any one of appendices 1 to 6, preferably,
After the step (a), the step (b) is performed without supplying moisture (H ₂ O) from the outside into the processing container.

(Appendix 8)
The method according to any one of appendices 1 to 7, preferably,
After the step (a), the step (b) is performed without purging with an inert gas in the processing vessel and evacuation.

(Appendix 9)
The method according to any one of appendices 1 to 8, preferably,
In the step (a), the deposit containing the oxygen-containing film adhered in the processing container is removed (by an etching reaction).

(Appendix 10)
The method according to any one of appendices 1 to 9, preferably,
In the step (b), water generated in the processing container in the step (a) is removed. That is, in the step (b), moisture generated in the processing container in the step (a) is removed by purging the processing container with the fluorine gas.

(Appendix 11)
According to another aspect of the invention,
A method for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing container, and removing the deposit containing the oxygen-containing film adhering to the processing container (by an etching reaction);
(B) supplying fluorine gas into the processing container after removing the deposit, and removing water generated in the processing container in the step (a);
In the step (a), there is provided a cleaning method in which, when water generated in the processing container alone is present, the temperature is such that the water remains in the processing container.

(Appendix 12)
According to yet another aspect of the invention,
Performing a process of forming an oxygen-containing film on the substrate in a processing container;
Cleaning the inside of the processing container after performing the process of forming the oxygen-containing film;
In the process of cleaning the inside of the processing container,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
There is provided a method of manufacturing a semiconductor device in which, in the step (a), when water generated in the processing container is present alone, the temperature is such that the water remains in the processing container.

(Appendix 13)
The method according to appendix 12, preferably,
After the cleaning step, the method further includes a step of replacing members in the processing container. For example, the method further includes a step of replacing a nozzle that supplies gas into the processing container.

(Appendix 14)
According to yet another aspect of the invention,
A processing container for performing a process of forming an oxygen-containing film on the substrate;
A hydrogen fluoride gas supply system for supplying hydrogen fluoride gas into the processing vessel;
A fluorine gas supply system for supplying fluorine gas into the processing vessel;
(A) a process of supplying the hydrogen fluoride gas into the processing container when cleaning the inside of the processing container after performing a process of forming an oxygen-containing film on the substrate; and (b) the processing container. In the state where the supply of the hydrogen fluoride gas to the inside is stopped, the process of supplying the fluorine gas into the processing container, and (a) the water generated in the processing container alone exists in the processing (a) A control unit configured to control the hydrogen fluoride gas supply system and the fluorine gas supply system so that the moisture is allowed to remain at a temperature that remains in the processing vessel.
A substrate processing apparatus is provided.

(Appendix 15)
According to yet another aspect of the invention,
A procedure for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) a procedure of supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
A program that causes a computer to execute a procedure that causes the moisture to be retained in the processing container when the moisture generated in the processing container alone exists in the procedure (a), or A computer-readable recording medium recording the program is provided.

200 wafer (substrate)
201 processing chamber 203 reaction tube 206 heater 209 manifold 232a to 232j gas supply tube 249a, 249b, 249e nozzle 121 controller

Claims (5)

A method for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
A cleaning method in which, in the step (a), when water generated in the processing container is present alone, the temperature is such that the water remains in the processing container.   The cleaning method according to claim 1, wherein the step (a) and the step (b) are continuously performed without providing an intermittent period. Performing a process of forming an oxygen-containing film on the substrate in a processing container;
Cleaning the inside of the processing container after performing the process of forming the oxygen-containing film;
In the process of cleaning the inside of the processing container,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
A method of manufacturing a semiconductor device, wherein, in the step (a), when water generated in the processing container alone is present, the temperature is such that the water remains in the processing container. A processing container for performing a process of forming an oxygen-containing film on the substrate;
A hydrogen fluoride gas supply system for supplying hydrogen fluoride gas into the processing vessel;
A fluorine gas supply system for supplying fluorine gas into the processing vessel;
(A) a process of supplying the hydrogen fluoride gas into the processing container when cleaning the inside of the processing container after performing a process of forming an oxygen-containing film on the substrate; and (b) the processing container. In the state where the supply of the hydrogen fluoride gas to the inside is stopped, the process of supplying the fluorine gas into the processing container, and (a) the water generated in the processing container alone exists in the processing (a) A control unit configured to control the hydrogen fluoride gas supply system and the fluorine gas supply system so that the moisture is allowed to remain at a temperature that remains in the processing vessel.
A substrate processing apparatus. A procedure for cleaning the inside of a processing container after performing a process of forming an oxygen-containing film on a substrate,
(A) supplying hydrogen fluoride gas into the processing vessel;
(B) a procedure of supplying fluorine gas into the processing container in a state where supply of the hydrogen fluoride gas into the processing container is stopped;
A program that causes a computer to execute a procedure that causes the moisture to be retained in the processing container when the moisture generated in the processing container alone exists in the procedure (a).

Images