JP2012099840A - Cleaning method, method for manufacturing semiconductor device and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent residual materials after cleaning from being left in a processing chamber, while shortening the cleaning time.SOLUTION: A cleaning method includes: a step for etching deposits including a thin film adhering to the inner wall of a reaction tube by supplying the etching gas into the reaction tube composed of a heat-resistant nonmetallic member after forming a thin film on a substrate; and a step for etching the surface of the inner wall of the reaction tube by supplying the etching gas into the reaction tube after etching the deposits.

Description

  The present invention relates to a semiconductor device manufacturing method, a cleaning method, and a semiconductor device manufacturing apparatus including a film forming process and a cleaning process, and more particularly to an improved cleaning process.

Conventionally, dry cleaning for removing a film deposited in a processing chamber of a vertical CVD apparatus has been performed by introducing a ClF ₃ gas into the processing chamber and etching and cleaning the processing chamber without plasma. (For example, refer to Patent Document 1). At that time, the processing chamber temperature was around the temperature at which the deposited film was formed. This is because, first, if the temperature in the processing chamber at the time of cleaning is close to the temperature at which the deposited film is formed, the removal of the film is promoted and the cleaning time can be shortened. Second, since the film forming process and cleaning in the processing chamber are repeated, if the cleaning can be performed at a temperature close to the film forming temperature, the increase / decrease width of the temperature in the processing chamber is reduced and the throughput is improved. Therefore, when considering the temperature at the time of cleaning from the viewpoint of promoting cleaning and improving the throughput, it is preferable that the cleaning temperature is close to the formation temperature of the adhesion film.

However, when the temperature in the processing chamber at the time of cleaning is close to the film formation temperature, there is a problem that damage in the processing chamber is large. For example, when cleaning is performed at 550 ° C., which is the deposition temperature of a polysilicon (Poly-Si) film, a chemical reaction with ClF ₃ gas occurs vigorously, and damage to the quartz member and furnace opening metal in the processing chamber is large. There is also a problem that particles after cleaning increase due to this damage. In addition, ClF ₃ is satisfactory as an etching rate, but also because the etching rate selection ratio of the deposited film to the reaction tube (quartz) cannot be made large, the devitrification of quartz is severe and the consumption of quartz members is severe. There was also a problem.

In addition, as a countermeasure against damage to the CVD apparatus using ClF ₃ gas for cleaning, part of the furnace opening metal is replaced with stainless steel (SUS), which has high corrosion resistance. Could not be effectively avoided. Therefore, ClF ₃ gas is not adopted.

Therefore, instead of ClF ₃ , (1) NF ₃ , (2) F ₂ , and (3) a mixed gas of F ₂ and HF are being studied as cleaning gases.

JP 2002-175986 A

However, there are problems with these gases. For example, when dry cleaning of a SiN (hereinafter, simply SiN) film is performed, there are the following problems.
(1) In the NF ₃ gas cleaning, since the decomposition temperature of the NF ₃ gas is high, dry cleaning is performed at a high temperature, so that the corrosion problem and the etching rate selection ratio of the SiN film to the quartz cannot be obtained.
(2) For F ₂ cleaning (without HF addition), the temperature must be raised to about 350 ° C., which is a relatively low temperature compared to cleaning using ClF ₃ or NF ₃ , but the etching rate is still low and the total processing time is There is a problem that it becomes long. Therefore, what is satisfactory in terms of COO (Cost of Ownership) cannot be obtained.
(3) It has been reported that the mixed gas cleaning in which HF is added to F ₂ can be etched at about 300 ° C. However, since the selection ratio is too large, the quartz member peeled off together with the SiN film is etched. Instead, the quartz member becomes quartz powder (powder) and remains in the processing chamber.

  SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, shorten the cleaning processing time, and prevent the residue after cleaning from remaining in the processing chamber. It is to provide a manufacturing apparatus.

  According to a first aspect of the present invention, there is provided a semiconductor device manufacturing method for processing a substrate in a processing chamber having a heat-resistant non-metallic member. The processing chamber is set to a desired processing temperature and is exhausted while supplying a processing gas into the processing chamber. A processing step for performing desired processing on the substrate; a first cleaning step for removing deposits attached to the heat-resistant non-metallic member in the processing step under a first cleaning condition in the processing chamber; and the processing The interior is set to a second cleaning condition in which the etching rate of the heat-resistant non-metallic member is larger than that of the first cleaning condition, and deposits remaining on the heat-resistant non-metallic member are removed in the first cleaning step. A method for manufacturing a semiconductor device, comprising: a second cleaning step.

  In the processing step, the processing chamber is set to a desired processing temperature, the processing gas is exhausted while being supplied into the processing chamber, and a desired processing is performed on the substrate. When this processing step is repeated, deposits adhere to and accumulate on the heat-resistant non-metallic member in the processing chamber. This deposit is removed in a two-step cleaning process.

  In the first cleaning step, the processing chamber is set to the first cleaning condition. The first cleaning condition is set to a condition that the etching rate of the heat-resistant non-metallic member is lower than that of the second cleaning condition, that is, a condition that the etching rate of the deposit is increased. Therefore, in the first cleaning process, the deposits attached to the heat-resistant nonmetallic member can be removed in a short time.

  In the second cleaning step, the processing chamber is set to a second cleaning condition in which the etching rate of the heat-resistant non-metallic member is larger than the first cleaning condition. Therefore, in the second cleaning step, the heat-resistant nonmetallic member peeled off together with the deposit in the first cleaning step is etched, and the powdered heat-resistant nonmetallic member can be effectively removed from the processing chamber. .

Further, by adding a condition that does not corrode the metal in the processing chamber to the first and second cleaning conditions, it is possible to prevent the metal in the processing chamber from being corroded in the first and second cleaning steps.
As a result, the metal in the processing chamber is not corroded, the cleaning processing time is short, and quartz powder can be prevented from remaining in the processing chamber.

Here, examples of the heat-resistant non-metallic member include quartz, SiC, and silicon. Examples of the deposit include a film and a by-product generated during processing by thermal CVD or the like, and a heat-resistant non-metallic member formed into a powder shape by etching a heat-resistant non-metallic member after the etching process. Examples of the processing chamber include a vertical processing chamber that processes a plurality of substrates at once, and a single wafer processing chamber that processes one to two to three substrates. In addition, examples of a method for manufacturing a semiconductor device that processes a substrate include thermal CVD, ALD, and plasma CVD. Examples of the substrate processing include thin film formation. Examples of the thin film type include a SiN film and a Poly-Si film. The desired film formation temperature varies depending on the production method, but may be about 300 ° C to 800 ° C. Examples of the processing gas include SiH ₂ Cl ₂ and NH ₃ gas if the film type is a SiN film. In order to evacuate while supplying the processing gas, the processing chamber is provided with an air supply system so that the processing gas can be supplied into the processing chamber, and an exhaust system is provided so that the inside can be exhausted. An example of the cleaning process is dry cleaning using a cleaning gas. Examples of the cleaning gas include F ₂ , F ₂ , HF, or a mixed gas of F ₂ and HF.

According to a second aspect of the present invention, in a method of manufacturing a semiconductor device in which a substrate is processed in a processing chamber having a quartz member therein, the processing chamber is set to a desired film formation temperature, and the processing chamber is exhausted while supplying a processing gas. A film forming step of forming a desired film on the substrate, and a temperature of the processing chamber is set to a desired first cleaning temperature, and a mixed gas of F ₂ and HF is flowed into the processing chamber, and the film forming step A first cleaning step for removing the film adhering to the quartz member and a second cleaning temperature higher than the first cleaning temperature in the processing chamber, and F ₂ and HF in the processing chamber. And a second cleaning step of removing deposits remaining on the quartz member in the first cleaning step.

When a mixed gas of F ₂ and HF is flowed as the cleaning gas, the etching rate selection ratio of the film to the quartz member is smaller when the temperature is higher than when the temperature in the processing chamber is low.

  Therefore, in the first cleaning step, the first cleaning temperature is set to a temperature lower than the second cleaning temperature, so that the film adhering to the quartz member can be effectively removed. If the first cleaning temperature is set to a desired temperature at which the film etching rate is high, the film can be removed in a short time.

  In the second cleaning step, the temperature in the processing chamber is set to a second cleaning temperature that is higher than the first cleaning temperature. Therefore, in the second cleaning step, the quartz peeled off together with the film in the first cleaning step. The manufactured member is etched, and the quartz powder can be effectively removed from the processing chamber.

In the second invention, the first and second cleaning temperatures are preferably 300 ° C. and 350 ° C., respectively, from the experimental results. If the first temperature is less than 300 ° C., the etching rate of the film becomes too low. When the first cleaning temperature exceeds 300 ° C., the etching rate selection ratio of the film to the quartz member becomes small, and the film cannot be effectively etched. When the second cleaning temperature is less than 350 ° C., the etching rate selection ratio of the film to the quartz member becomes too large, and the peeled quartz member cannot be effectively etched. If the second cleaning temperature exceeds 350 ° C., corrosion of metal parts in the processing chamber increases, which is not preferable.
Here, examples of the quartz member include a reaction vessel (for example, a reaction tube) constituting a processing chamber, a gas introduction nozzle for supplying a processing gas, and a substrate holder such as a boat for holding a substrate.

According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which a substrate is processed in a processing chamber having a quartz member therein, wherein the processing chamber is set to a desired film formation temperature and is exhausted while supplying a processing gas into the processing chamber. A film forming step for forming a desired film on the substrate; a temperature in the processing chamber is set as a desired cleaning temperature; a mixed gas of F ₂ and HF is flowed into the processing chamber; A first cleaning step for removing a film adhering to the manufacturing member; and a temperature in the processing chamber is set to a desired cleaning temperature, and F ₂ gas is allowed to flow in the processing chamber without flowing HF gas. And a second cleaning step of removing deposits remaining on the quartz member in the step.

When a mixed gas of F ₂ and HF is flowed as the cleaning gas, the etching rate of the film increases as the cleaning temperature increases. Further, if F ₂ is flowed without flowing HF as the cleaning gas, the etching rate selection ratio of the film to the quartz member is small and the etching rate is low without depending on the cleaning temperature. In an actual process for etching a quartz member, it is more effective to flow only F ₂ having a low etching rate than to flow a mixed gas with HF.
Therefore, in the first cleaning process, a mixed gas of F ₂ and HF is flowed into the processing chamber, so that the temperature in the processing chamber becomes a desired cleaning temperature at which the etching rate of the film exhibits a practically acceptable value. If it is set to 1, the film adhering to the quartz member in the film forming step can be effectively removed in a short time.

In the second cleaning step, F ₂ gas is allowed to flow without flowing HF gas into the processing chamber. Therefore, if the temperature in the processing chamber is a desired cleaning temperature, the quartz of the quartz member generated in the first cleaning step The powder can be effectively removed.

  In the third invention, the desired cleaning temperature in the first and second cleaning steps is about 300 ° C. in the first cleaning step and 300 ° C. to 350 ° C. in the second cleaning step based on the experimental results. Is preferred.

  According to the present invention, it is possible to shorten the cleaning processing time and prevent the residue after cleaning from remaining in the processing chamber.

It is a cleaning sequence diagram explaining an example of a manufacturing method of a semiconductor device according to the present invention. It is a figure explaining the HF flow rate dependence of the etching rate of a SiN film. It is a figure explaining the temperature dependence of the etching rate of a SiN film. It is a figure explaining the temperature dependence of an etching rate and an etching rate selection ratio. It is the schematic which shows the cross section of the vertical type CVD apparatus used for the manufacturing method of the semiconductor device of this invention.

Embodiments of the present invention will be described below.
FIG. 5 shows a schematic structure of a vertical CVD apparatus for carrying out the semiconductor device manufacturing method.

  An external reaction tube 1 is provided inside the heater 10, and an internal reaction tube 2 having an open upper end is concentrically disposed inside the external reaction tube 1. The external reaction tube 1 and the internal reaction tube 2 are Standing on the furnace port flange 3, the space between the external reaction tube 1 and the furnace port flange 3 is sealed by an O-ring (not shown). The lower end of the furnace port flange 3 is hermetically closed by a seal cap 5, and a boat 6 is erected on the seal cap 5 and inserted into the internal reaction tube 2. The boat 6 is loaded with wafers 7 to be processed in a horizontal posture in multiple stages. In addition, in the region below the boat 6, a required number of heat insulating plates 4 are loaded in multiple stages in a horizontal posture. The inside of the external reaction tube 1 and the internal reaction tube 2 constitutes a processing chamber 11.

A gas introduction nozzle 8 communicates with the furnace port flange 3 below the internal reaction tube 2 and communicates with a lower end of a cylindrical space formed between the external reaction tube 1 and the internal reaction tube 2. The exhaust pipe 9 is connected to the furnace port flange 3.

  The boat 6 is lowered through the seal cap 5 by a boat elevator (not shown), the wafer 6 is loaded into the boat 6, and the boat 6 is inserted into the internal reaction tube 2 by the boat elevator. After the seal cap 5 completely seals the lower end of the furnace port flange 3, the inside of the external reaction tube 1 (the processing chamber) is evacuated.

  Among the members constituting the vertical CVD apparatus described above, at least the reaction tubes 1 and 2 and the boat 6 are made of a quartz member which is a heat-resistant non-metallic member, and the furnace port member such as the furnace port flange 3 is a metal member. Consists of. Here, the furnace port member refers to both the reaction tube side member and the boat side member that constitute the furnace port portion when the boat 6 is inserted into the internal reaction tube 2. The outer reaction tube 1, the inner reaction tube 2, and the boat 6 are made of quartz members. The furnace port flange 3 exposed to the cleaning gas is a metal member such as SUS304, a seal flange 12 for sealing the reaction tube, a seal cap 5 for the boat 6, and a cap on the seal cap 5. The receiver 11 is made of a metal member such as Hastelloy C22.

  Next, a method for manufacturing a semiconductor device in the case where a SiN film is formed on a silicon wafer in the vertical CVD apparatus configured as described above will be described. In the film forming process for forming the SiN film on the silicon wafer, the film forming gas is supplied from the gas introduction nozzle 8 and is exhausted from the exhaust pipe 9, and the internal reaction tube 2 is heated and maintained at a predetermined film forming temperature. A SiN film is formed on the surface of the wafer 7. The conditions for forming the SiN film are, for example, as follows.

Temperature: 650 ° C. to 800 ° C., pressure: 20 to 100 Pa, processing gas: SiH ₂ Cl ₂ (DCS) 0.02 to 0.30 slm, NH ₃ : 0.10 to 2.00 slm, film thickness: 1.0 μm to It is. After the film formation is completed, an inert gas is supplied from the gas introduction nozzle 8, the inside of the reaction tubes 1 and 2 is replaced with an inert gas to return to normal pressure, the boat 6 is lowered, and the film formation from the boat 6 is completed. The wafer 7 is dispensed.

  After the above film forming process is repeated once or a plurality of times, a cleaning process of the apparatus is performed. In the cleaning process, a cleaning gas is supplied from the gas introduction nozzle 8 to maintain the internal reaction tube 2 at a predetermined temperature. In the film forming step, the SiN film adhering to the quartz member or the metal member in the reaction tubes 1 and 2 is removed. At this time, the furnace port is closed with a metal shutter, or an empty boat 6 from which wafers are discharged is inserted into the reaction tube 1 so that the quartz member or metal member constituting the boat 6 is put together. It may be cleaned.

By the way, in this type of reaction chamber cleaning process, it is important how and what type of cleaning gas is used so as to reduce the generation of foreign matter after cleaning. Therefore, it was subjected to various studies, as a cleaning gas, that using the F ₂ gas, and HF gas F ₂ gas added (mixed gas of HF and F _2), for cleaning under the following conditions: But found it the best.

  When etching a film adhering to a quartz member, for example, a SiN film that is a CVD film, the cleaning process is divided into two stages, the first etching event under a condition with a large SiN / quartz etching rate selection ratio, and SiN / This is combined with the second etching event under a condition where the quartz etching rate selectivity is small. Thereby, the residue of quartz powder in the reaction tube and the inner wall of the reaction tube can be suppressed.

This will be described using the experimental results shown in FIGS.
2 shows HF flow rate dependency data of the SiN film etching rate, FIG. 3 shows temperature dependency data of the SiN film etching rate, and FIG. 4 shows temperature dependency data of the SiN film etching rate and SiN film / quartz etching rate selection ratio. . In the figure, N ₂ is a gas for diluting the cleaning gases HF and F ₂ . Para. Means a parameter.

In FIG. 2, when the flow rate of F ₂ gas is kept constant at ₂ slm and the etching temperature is changed to 275 ° C., 300 ° C., 325 ° C., and 350 ° C., the SiN film with respect to the HF flow rate (slm) at each etching temperature. The etching rate (Å / min) was measured. The etching rate tends to increase as the HF flow rate increases. Further, the amount of increase in the etching rate tends to increase as the temperature increases. In addition, since HF gas will become liquefied gas when it exceeds 3 slm, it will become difficult to ensure flow volume. If the supply pressure (original pressure) is increased, the flow rate can be secured, but this is not preferable because liquefaction is promoted. Therefore, a flow rate range of about 1 to 3 slm is used as the HF flow rate that actually flows. Therefore, in order to increase the etching rate of the SiN film at any temperature, the HF flow rate may be increased to nearly 3 slm.

In FIG. 3, the etching temperature (° C.) when the flow rate of the cleaning gas HF is changed to 0 slm (only F ₂ / N ₂ ), ₂ slm, 3 slm, and 5 slm with the F ₂ gas flow rate kept constant at ₂ slm. ) Was measured for the etching rate (Å / min) of the SiN film. The etching rate tends to increase as the etching temperature increases. Therefore, at any HF flow rate, in order to increase the etching rate of the SiN film, it is preferable to increase the etching temperature.

In FIG. 4, the SiN film etching rate (nm / min) with respect to the etching temperature and the SiN film / quartz etching rate selection ratio (SiN / quartz) with respect to the etching temperature were measured. The etching gas used was F ₂ gas alone or a mixed gas of F ₂ and HF gas. Here, in the case of only F ₂ gas, each gas flow rate was set to F ₂ : ₂ slm and N ₂ : 8 slm. In the case of a mixed gas of F ₂ and HF gas, the flow rates of the respective gases are F ₂ : ₂ slm, N ₂ : 8 slm, and HF is 3 slm, which is the limit of securing the flow rate as described in FIG. Pressure in the treatment chamber, only _{F 2,} when the _{F 2} and HF, were both ^{5.33 × 10 4 Pa (400Torr)} .

When the F ₂ gas is used alone, the etching rate selection ratio of the SiN film / quartz shows that the selection ratio is small at 350 ° C. even at 300 ° C. and does not depend on the temperature. Similarly, when the F ₂ gas is used alone, the etching rate of the SiN film increases slightly from 300 ° C. to 350 ° C., but the etching rate of the SiN film increases as a whole. Since it is less than 50 nm / min, it cannot be said that it is very practical when a thick SiN film is etched in a short time. Therefore, it can be said that F ₂ gas alone is good for etching quartz, but it is not suitable for etching SiN film because the etching rate is too low.

In contrast, when using a mixed gas of F ₂ and HF gas (F ₂ to which was added HF), looking at the etch rate selectivity of the SiN film / quartz, 350 ° C. in small selective ratio, It can be seen that the SiN film is hardly etched, and much quartz is etched. In contrast, at 300 ° C., on the contrary, the etching rate selectivity increases, and the etching amount of the SiN film becomes larger than that of quartz. Therefore, 350 ° C. is better than 300 ° C. for etching the quartz member.

Similarly, when a mixed gas of F ₂ and HF gas is used, the etching rate of the SiN film is high at 350 ° C. exceeding 150 nm / min. At 300 ° C., the etching rate is 50 nm / min or more, and the etching rate decreases as the temperature decreases. That is, in order to etch the SiN film, if the mixed gas of F ₂ and HF gas is 300 ° C., the SiN film etching rate is high and the SiN film / quartz etching rate selection ratio is high. it can. Therefore, it can be said that the etching temperature is preferably about 300 ° C. to clean the SiN film using a mixed gas of F ₂ and HF. Under the condition of 300 ° C., when the flow rate of F ₂ / N ₂ / HF is ₂ slm / 8 slm / 2 slm, it can be seen that the etching rate of the SiN film is about 900 L / min (90 nm / min), This value is fast and practical enough.

Therefore, the cleaning process has two stages. When a common cleaning gas is used in both stages, a gas obtained by increasing the etching rate by adding HF to F ₂ is used as the cleaning gas. In the preceding cleaning step, the SiN film is preferentially etched under a temperature condition (300 ° C.) that increases the SiN film / quartz etching rate selection ratio. In the subsequent cleaning process, the quartz powder (powder) generated when the SiN film adhering to the processing chamber wall is peeled off preferentially at a temperature condition (350 ° C.) at which the SiN film / quartz etching rate selection ratio becomes small. remove.
Further, HF is added to F ₂ as a cleaning gas in the previous cleaning process of the two stages, and the SiN film is preferentially etched under a temperature condition of 300 ° C., for example. In the subsequent cleaning step, only F ₂ is used as the cleaning gas, and the quartz powder is preferentially removed under a temperature condition of 300 to 350 ° C., for example.
When such a two-step cleaning sequence is assembled, the quartz powder (powder) after the cleaning can be removed, and a state where there is little foreign matter can be maintained in the processing chamber.

In addition, the experimental data of FIGS. 2-4 mentioned above are obtained as follows.
(1) Evaluation with quartz chip Both are based on basic tests using monitor wafers. Here, the monitor wafer was a quartz (Si) chip, and the quartz chip was put into the furnace from the time of SiN film formation, and cleaning was performed as it was to remove the SiN film. In FIG. 5, the places where the quartz chips were introduced were the boat top 6a (TOP) and the bottom 6b (BTM).
(2) Average of TOP and BTM The average film thickness of the quartz chip put into the TOP and BTM of the vertical furnace is taken.
(3) Measurement by SiN film thickness difference attached to the quartz chip Cleaning was performed for a certain period of time on the quartz chip on which the SiN film was formed, and the etching rate was obtained by the film thickness difference before and after.

As described above, after repeating the film forming process once or a plurality of times, the apparatus cleaning process is performed.
FIG. 1 is a cleaning sequence diagram illustrating an embodiment of a method for manufacturing a semiconductor device based on the experimental results described above.

N ₂ gas is supplied into the internal reaction tube 2 through the gas introduction nozzle 8 (see FIG. 5). When the preheat state is changed from the standby state, the temperature in the internal reaction tube 2 is 300 ° C. (first cleaning) Temperature). At this time, the F ₂ gas and the HF gas have not yet been supplied into the internal reaction tube 2 (see FIG. 5).

F ₂ gas and HF gas are supplied into the internal reaction tube 2 through the gas introduction nozzle 8 with the temperature in the internal reaction tube 2 maintained at 300 ° C. (first cleaning process, etching event 1 in FIG. 1). ). At this time, since the etching rate selection ratio of SiN film (film) / quartz becomes large (see FIG. 4), the SiN film adhering to the reaction tubes 1 and 2 and the like which are quartz members in the film forming process is preferentially etched. Removed by. Further, the etching rate of SiN takes a sufficiently practical value at 300 ° C.

After this first cleaning step, the temperature in the internal reaction tube 2 is set to 350 ° C. (second cleaning temperature), and F ₂ gas and HF gas are supplied into the internal reaction tube 2 while maintaining this temperature. (Second cleaning step, etching event 2 in FIG. 1). At this time, since the etching rate selection ratio of SiN film (film) / quartz is smaller than that in the first cleaning process (see FIG. 4), the quartz members such as the reaction tubes 1 and 2 peeled off together with the SiN film are etched. The quartz powder (powder) adhering to the reaction tubes 1 and 2 in the first cleaning step is removed together with the SiN film.
In the second cleaning step, the temperature in the internal reaction tube 2 is set to 300 to 350 ° C., and only F ₂ gas (F ₂ + N ₂ ) is supplied into the internal reaction tube 2 while maintaining this temperature. Even so, the same effect can be obtained. At this time, the flow rates of F ₂ gas and N ₂ gas are preferably ₂ slm and 8 slm, respectively.

The supply of HF and F ₂ gas is stopped, the etching event 2 is terminated, the inside of the internal reaction tube 2 is after purged, and the remaining gas is removed from the processing chamber 11. The after purge is a cycle purge in which the inside of the processing chamber 11 is repeatedly purged.

The time required for the standby state and the preheat state is arbitrary. Further, the time (etching time) of the first cleaning process and the second cleaning process is determined by the film thickness. The time ratio between the first cleaning process and the second cleaning process was about 8/2. Therefore, most of the total etching event time is applied to the etching event 1 for removing the film at a high SiN etching rate, so that the film adhering to the quartz member can be removed in a short time, and no film remains. Furthermore, the cycle purge time is about 30 minutes. The flow rates of F ₂ gas, HF gas, and N ₂ gas are ₂ slm, 1-3 slm, and 8 slm, respectively.

As described above, in the embodiment, since HF and F ₂ are used as the cleaning gas, the corrosion of the metal member can be reduced as compared with the case of using NF ₃ gas, and the SiN film is etched with respect to quartz. There is no case that the rate selection ratio cannot be obtained.

Further, in the preceding stage cleaning, since the cleaning at 300 ° C. using a mixed gas obtained by adding HF to the F _2, as cleaning with only F ₂ of HF without the addition, the etching gas velocity is low, the total processing time Satisfactory results can be obtained in terms of COO without being long.

Further, in the latter stage cleaning, when only F ₂ gas is used, the temperature is set to about 300 to 350 ° C., and F ₂ and HF gas are set to about 350 ° C., and the etching selectivity is reduced with SiN film / quartz. At the time of etching, residues such as quartz powder adhering to the inner wall of the quartz reaction tube can be removed, and the quartz member peeled off together with the SiN film can be effectively etched. It is possible to effectively remove foreign substances and the like caused by the powder from the processing chamber.

  Further, since the cleaning temperature is about 350 ° C. at the highest, the reaction of the cleaning gas with the quartz member or the metal member can be suppressed. Therefore, damage to the quartz member and the furnace opening metal in the processing chamber can be reduced.

  As described above, according to the present embodiment, it is possible to eliminate the residue adhering to the quartz part, reduce the generation of foreign matter after the cleaning is performed, and shorten the processing time.

Etching may be performed in three stages or more. However, considering the relationship between the accumulated film thickness and the etching rate, it is preferable to perform the etching in two stages as in the embodiment.

Moreover, although the case where SiN was used was demonstrated in the said embodiment, it is applicable also to a polycrystal silicon (Poly-Si) film | membrane.
In the embodiment, the vertical processing furnace has been described. However, the present invention can also be applied to a single wafer horizontal processing furnace. Furthermore, in the embodiment, the wafer 7 is loaded horizontally, but the present invention can also be applied to a wafer 7 loaded in the vertical direction.

In the above-described embodiment, the SiN / quartz etching rate selection ratio is adjusted using the etching temperature as a parameter. However, the present invention is not limited to this and is attached to a heat-resistant non-metallic member. In the case of removing the film, the selection ratio can be adjusted by parameters other than the temperature, for example, the etching gas concentration. That is, according to the examination result of other parameters, the selection ratio tends to decrease as the pressure increases in the processing chamber pressure. As for the cleaning gas flow rate, when the F ₂ gas concentration increases, the selection ratio tends to decrease. Regarding the change of the gas type, when NF ₃ is used, the selection ratio becomes small. From these results, the same effect can be exhibited even if the processing chamber pressure or the F ₂ gas flow rate is used as a parameter instead of the etching temperature.

1 External reaction tube (quartz member)
2 Internal reaction tube (quartz member)
6 Boat (Quartz member)
7 Wafer (substrate)
8 Gas introduction nozzle 9 Exhaust pipe 11 Processing chamber

Claims (9)

Etching a deposit containing the thin film attached to the inner wall of the reaction tube by supplying an etching gas into the reaction tube after forming a thin film on a substrate in a reaction tube composed of a heat-resistant non-metallic member; ,
Supplying an etching gas into the reaction tube after etching the deposit, and etching the surface of the inner wall of the reaction tube;
A cleaning method comprising: Etching a deposit containing the thin film attached to the inner wall of the reaction tube by supplying an etching gas into the reaction tube after forming a thin film on a substrate in a reaction tube composed of a heat-resistant non-metallic member; ,
F ₂ gas into the reaction tube after etching the deposits, or a step of supplying the F ₂ gas and HF gas, etching the surface of the reaction tube walls,
A cleaning method comprising:   3. The step of etching the surface of the inner wall of the reaction tube removes the powder of the heat-resistant nonmetallic member generated on the surface of the inner wall of the reaction tube after etching the deposit. The cleaning method as described in.   The cleaning method according to claim 1, wherein the heat-resistant non-metallic member includes at least one of a quartz member, a SiC member, and a silicon member.   The cleaning method according to claim 1, wherein the heat-resistant non-metallic member includes a quartz member. Forming a thin film on a substrate in a reaction tube composed of a heat-resistant non-metallic member;
Supplying an etching gas into the reaction tube after forming the thin film, and etching the deposit containing the thin film attached to the inner wall of the reaction tube;
Supplying an etching gas into the reaction tube after etching the deposit, and etching the surface of the inner wall of the reaction tube;
A method for manufacturing a semiconductor device, comprising: Forming a thin film on a substrate in a reaction tube composed of a heat-resistant non-metallic member;
Supplying an etching gas into the reaction tube after forming the thin film, and etching the deposit containing the thin film attached to the inner wall of the reaction tube;
F ₂ gas into the reaction tube after etching the deposits, or a step of supplying the F ₂ gas and HF gas, etching the surface of the reaction tube walls,
A method for manufacturing a semiconductor device, comprising: A reaction tube made of a heat-resistant non-metallic member and forming a thin film on the substrate inside;
An air supply system for supplying gas into the reaction tube;
The etching gas is supplied into the reaction tube after the thin film is formed on the substrate in the reaction tube, the deposit including the thin film attached to the inner wall of the reaction tube is etched, and the deposit after etching the deposit An adjusting unit that adjusts the air supply system to supply an etching gas into the reaction tube and etch the surface of the inner wall of the reaction tube;
A substrate processing apparatus comprising: A reaction tube made of a heat-resistant non-metallic member and forming a thin film on the substrate inside;
An air supply system for supplying gas into the reaction tube;
The etching gas is supplied into the reaction tube after the thin film is formed on the substrate in the reaction tube, the deposit including the thin film attached to the inner wall of the reaction tube is etched, and the deposit after etching the deposit F ₂ gas into the reaction tube, or an adjustment unit which supplies and F ₂ gas and HF gas, the surface of the reaction tube wall to adjust the air supply system to etch,
A substrate processing apparatus comprising:

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