JP2016109856A - 積層構造体 - Google Patents
積層構造体 Download PDFInfo
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- JP2016109856A JP2016109856A JP2014246926A JP2014246926A JP2016109856A JP 2016109856 A JP2016109856 A JP 2016109856A JP 2014246926 A JP2014246926 A JP 2014246926A JP 2014246926 A JP2014246926 A JP 2014246926A JP 2016109856 A JP2016109856 A JP 2016109856A
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- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 48
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 239000010431 corundum Substances 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
コランダム(110)/LiNbO2(100)/LiNbO3(110)
各構成要素が上記の配向を取ると、結晶配向性の整合を高めつつ格子定数の相違を最小化できるため、本発明の効果をさらに高めることができる。
図1を用いて、本実施形態の積層構造体の構造を示す。本実施形態の積層構造体は、単結晶基板1と、誘電体層3と、単結晶基板と誘電体層との間に設けられたバッファ層2から構成される。
積層構造体の基板として、市販のサファイアa面単結晶基板を洗浄後、乾燥したものを用いた。
成膜時間を調整してバッファ層であるLiNbO2膜厚を1〜250nmの範囲で段階的に変化させた以外は実施例1と同様の条件で8個の積層構造体試料を作成した。得られた積層構造体の基板反り量、及びLN(110)のX線回折ロッキングカーブの半値幅を測定した。
積層構造体の構造は以下のようになっている。
Sapphire−a/LiNbO2(1〜250nm)/LN (1500nm)
結果は図5のように、基板反り量はバッファ層を入れることにより小さくなることが分かる。しかし、バッファ層の厚みが増えていくと、LNの結晶性が悪くなっていった。LiNbO2膜厚が200nmを超えた場合、ロッキングカーブの半値幅が1度を超えて、結晶性が良くない状態であった。
バッファ層を設けなかった以外は実施例1と同様の条件で積層構造体試料を作成した。バッファ層がない場合は基板反り量が大きかった。得られた積層構造体には、24時間経過後にクラックが生じていた。
Claims (4)
- 単結晶基板と、誘電体層と、前記単結晶基板と前記誘電体層との間に設けられたバッファ層と、を有し、前記誘電体層は、ニオブ酸リチウム(LiNbO3)若しくはタンタル酸リチウム(LiTaO3)であり、前記誘電体層を構成する結晶のc軸が前記単結晶基板の主面に対して略平行であり、前記バッファ層は、六方晶のLiNbO2若しくはLiTaO2であり、前記バッファ層を構成する結晶のc軸が前記単結晶基板の前記主面に対して略平行であることを特徴とする積層構造体。
- 前記バッファ層は、膜厚が1nm〜200nmの範囲にあることを特徴とする請求項1に記載の積層構造体。
- 前記単結晶基板は、コランダム型の結晶構造を有することを特徴とする請求項1または2のいずれか一項に記載の積層構造体。
- 前記積層構造体の結晶配向性が、以下の方向に規定された条件を満たしていることを特徴とする請求項1〜3のいずれか一項に記載の積層構造体。
コランダム(110)/LiZO2(100)/LiZO3(110)
(ただし、ZはNb若しくはTaである。)
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JP2016109856A true JP2016109856A (ja) | 2016-06-20 |
JP6390392B2 JP6390392B2 (ja) | 2018-09-19 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108550691A (zh) * | 2018-04-17 | 2018-09-18 | 佛山市卓膜科技有限公司 | 一种柔性强介电薄膜及其制作方法 |
WO2024158022A1 (ja) * | 2023-01-25 | 2024-08-02 | I-PEX Piezo Solutions株式会社 | 膜構造体及び電子デバイス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001117059A (ja) * | 1993-11-04 | 2001-04-27 | Fuji Xerox Co Ltd | 光スイッチング素子 |
JP2002244168A (ja) * | 2001-02-21 | 2002-08-28 | Fuji Xerox Co Ltd | 光スイッチの設計方法及び光スイッチ |
JP2006219339A (ja) * | 2005-02-10 | 2006-08-24 | Nippon Telegr & Teleph Corp <Ntt> | LiNbO3結晶薄膜成膜方法 |
US20120280224A1 (en) * | 2009-06-25 | 2012-11-08 | Georgia Tech Research Corporation | Metal oxide structures, devices, and fabrication methods |
JP2013173647A (ja) * | 2012-02-24 | 2013-09-05 | Tdk Corp | 誘電体積層薄膜 |
JP2014106397A (ja) * | 2012-11-28 | 2014-06-09 | Tdk Corp | 電気光学素子 |
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2014
- 2014-12-05 JP JP2014246926A patent/JP6390392B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001117059A (ja) * | 1993-11-04 | 2001-04-27 | Fuji Xerox Co Ltd | 光スイッチング素子 |
JP2002244168A (ja) * | 2001-02-21 | 2002-08-28 | Fuji Xerox Co Ltd | 光スイッチの設計方法及び光スイッチ |
JP2006219339A (ja) * | 2005-02-10 | 2006-08-24 | Nippon Telegr & Teleph Corp <Ntt> | LiNbO3結晶薄膜成膜方法 |
US20120280224A1 (en) * | 2009-06-25 | 2012-11-08 | Georgia Tech Research Corporation | Metal oxide structures, devices, and fabrication methods |
JP2013173647A (ja) * | 2012-02-24 | 2013-09-05 | Tdk Corp | 誘電体積層薄膜 |
JP2014106397A (ja) * | 2012-11-28 | 2014-06-09 | Tdk Corp | 電気光学素子 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108550691A (zh) * | 2018-04-17 | 2018-09-18 | 佛山市卓膜科技有限公司 | 一种柔性强介电薄膜及其制作方法 |
CN108550691B (zh) * | 2018-04-17 | 2021-09-14 | 佛山市卓膜科技有限公司 | 一种柔性强介电薄膜及其制作方法 |
WO2024158022A1 (ja) * | 2023-01-25 | 2024-08-02 | I-PEX Piezo Solutions株式会社 | 膜構造体及び電子デバイス |
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