JP2016081960A - Buff processing device and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To polish a substrate while suppressing damage to the substrate and to efficiently clean and remove a foreign substance or the like with high viscosity.SOLUTION: A buff processing device for performing buff processing on the substrate comprises: a buff table, which is configured rotatable, for supporting the substrate; and a buff head to which a buff pad for performing buff processing on the substrate can be attached. The buff head is configured rotatable and configured movable closely to the buff table and away from the buff table. An internal supply line for supplying a processing liquid for buff processing to the substrate is formed inside of the buff head. The buff processing device further comprises an external nozzle, that is provided separately from the internal supply line, for supplying the processing liquid to the substrate.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate buffing technique.

  In the manufacture of semiconductor devices, a chemical mechanical polishing (CMP) apparatus that polishes the surface of a substrate is known. A substrate processing system including a CMP apparatus includes a polishing unit (CMP unit) for polishing a substrate, a cleaning unit for cleaning and drying a substrate, and a substrate passing to the polishing unit and a cleaning unit And a load / unload unit for receiving a substrate that has been cleaned and dried by. In the polishing unit, a polishing pad is attached to the upper surface of the polishing table to form a polishing surface. The polishing unit presses the surface to be polished of the substrate held by the top ring against the polishing surface, and rotates the polishing table and the top ring while supplying slurry as a polishing liquid to the polishing surface. Thus, the polishing surface and the surface to be polished are slidably moved relative to each other, and the surface to be polished is polished.

JP 2010-50436 A

  In the conventional substrate processing apparatus described above, the mechanical action force acting on the substrate in the polishing unit is increased, and it may be difficult to perform polishing while suppressing damage (defect) of the substrate. In addition, it may be difficult to efficiently remove and remove highly sticky foreign matters in the cleaning unit. In addition, it is desirable to improve the throughput of substrate processing in order to improve productivity.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms.

  According to the first aspect of the present invention, a buffing apparatus for buffing a substrate is provided. This buff processing apparatus is a buff table for supporting a substrate, and includes a buff table configured to be rotatable, and a buff head to which a buff pad for buffing the substrate can be attached. The buff head is configured to be rotatable and configured to be movable in a direction approaching the buff table and a direction away from the buff table. An internal supply line for supplying the buff processing liquid to the substrate is formed in the buff head. The buff processing apparatus further includes an external nozzle provided separately from the internal supply line for supplying the processing liquid to the substrate.

According to such a buff processing apparatus, it is possible to perform post-processing of the substrate processed by the chemical mechanical polishing apparatus. According to the buff processing apparatus, finish polishing can be performed while suppressing damage (defects) of the substrate, or damage caused by the chemical mechanical polishing apparatus can be removed. Alternatively, it is possible to efficiently clean and remove a sticky foreign substance or the like as compared with conventional roll cleaning or pen cleaning. In addition, since this buff processing apparatus includes two systems of processing liquid supply means, that is, an internal supply line formed inside the buff head and an external nozzle, if both are used to supply the processing liquid, Regardless of the position of the buffing head (for example, even when the buffing head is dressed in a dresser arranged outside the buffing table), a sufficient amount of processing liquid is processed into the substrate before starting the buffing process. Can be supplied evenly to the surface. Therefore, damage to the substrate can be further suppressed. Alternatively, when the buff head is dressed in a dresser arranged outside the buff table, the processing liquid can be preloaded (pre-supplied) from the external nozzle during the dressing operation and while the buff head moves from the dresser to the contact position. Therefore, the throughput can be improved as compared with the case where the buff head is moved from the dresser onto the substrate and then the buff treatment is started after pre-loading the treatment liquid using only the internal supply line. In the present application, the expression “buffing a substrate” includes buffing only a specific portion on the substrate in addition to buffing the entire substrate.

  According to the second aspect of the present invention, in the first aspect, the buff processing device further includes a control unit configured to control the operation of the buff processing device. The control unit controls the buff processing apparatus to supply the processing liquid from the external nozzle while the buff table is rotated before the buff head approaches the buff table to the contact position for bringing the buff pad into contact with the substrate. Composed. According to such a form, the processing liquid is supplied to the substrate while the buff table is rotated, so that the processing liquid is supplied evenly over the entire substrate by this rotational force. Therefore, after that, when the buff pad rotates at the contact position, a sufficient amount of processing liquid exists between the substrate and the buff pad, so that damage to the substrate can be suppressed or cleaning efficiency can be improved.

  According to the third aspect of the present invention, in the second aspect, the control unit controls the buff processing device so as to supply the processing liquid from the internal supply line while the buff head approaches the buff table up to the contact position. Configured as follows. According to this mode, the amount of processing liquid supplied during preloading increases, so that the processing liquid can be supplied evenly over the entire substrate.

  According to the fourth aspect of the present invention, in the second or third aspect, the control unit is configured to control the internal supply line and the external nozzle after the start of the buff process or after a predetermined time has elapsed since the start of the buff process. The buff processing apparatus is configured to control the processing liquid to be supplied only from the internal supply line. According to this form, the usage-amount of a process liquid can be reduced.

  According to the fifth aspect of the present invention, in the second or third aspect, the control unit controls the buff processing device so as to supply the processing liquid from both the internal supply line and the external nozzle during the buff processing. Configured to do. According to this form, the shortage of the processing liquid during the buffing process can be suppressed. Therefore, damage to the substrate can be suppressed or cleaning efficiency can be improved.

  According to a sixth aspect of the present invention, in the first aspect, the buff processing device further includes a control unit configured to control the operation of the buff processing device. The control unit supplies the processing liquid from the external nozzle in a state where the rotation of the buff table is stopped before the buff head approaches the buff table to the contact position, and after the supply is started, moves the buff head to the contact position. The buffing device is configured to control rotation of the buffing table. According to such a form, the processing liquid can be efficiently preloaded on the region on the substrate in contact with the buff head to suppress damage to the substrate, or cleaning efficiency can be improved.

According to the seventh aspect of the present invention, a buffing apparatus for buffing a substrate is provided. This buff processing apparatus is a buff table for supporting a substrate, and includes a buff table configured to be rotatable, and a buff head to which a buff pad for buffing the substrate can be attached. The buff head is configured to be rotatable and configured to be movable in a direction approaching the buff table and a direction away from the buff table. An internal supply line for supplying the buff processing liquid to the substrate is formed in the buff head. The buff processing device further includes a control unit configured to control the operation of the buff processing device. The control unit controls the buff processing apparatus to supply the processing liquid from the internal supply line in a state where the buff table is rotated before the buff head approaches the buff table to a position for bringing the buff pad into contact with the substrate. Composed. According to such a form, the processing liquid is supplied to the substrate while the buff table is rotated, so that the processing liquid is supplied evenly over the entire substrate by this rotational force. Therefore, damage to the substrate can be suppressed or cleaning efficiency can be improved.

  According to the 8th form of this invention, the buff processing apparatus for buffing a board | substrate is provided. This buff processing apparatus is a buff table for supporting a substrate, and includes a buff table configured to be rotatable, and a buff head to which a buff pad for buffing the substrate can be attached. The buff head is configured to be rotatable and configured to be movable in a direction approaching the buff table and a direction away from the buff table. An internal supply line for supplying the buff processing liquid to the substrate is formed in the buff head. The buff processing device further includes a control unit configured to control the operation of the buff processing device. The control unit supplies the processing liquid from the internal supply line after the buff head approaches the buff table to the position for contacting the buff pad with the substrate in a state where the rotation of the buffing table and the buffing head is stopped, After the time supply, the buff table and the buff head are configured to start rotating. According to such a form, the buffing process can be started after at least a sufficient amount of the processing liquid has spread between the buffing pad and the substrate. Therefore, damage to the substrate can be suppressed or cleaning efficiency can be improved.

  According to the ninth aspect of the present invention, in any one of the second to eighth aspects, the control unit causes the first load to act on the substrate by the buff head during the initial period of the buff processing, and after the initial stage. In this period, the buff head is configured to control the buff head so that a second load larger than the first load acts on the substrate. According to such a form, it is possible to suppress the substrate from being damaged by performing the buffing process with a relatively small load in the initial period in which the processing liquid is not easily distributed over the substrate.

  According to a tenth aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes a chemical mechanical polishing apparatus and a buff processing apparatus according to any one of the first to ninth forms for performing post-processing of a substrate processed by the chemical mechanical polishing apparatus. According to such a substrate processing apparatus, the same effects as in any of the first to ninth embodiments are obtained.

  According to an eleventh aspect of the present invention, there is provided a method for buffing a substrate with a buffing apparatus. This method includes a step of placing a substrate on a buffing table for rotatably supporting the substrate, and a buffing pad attached to a buffing head in which an internal supply line for supplying a processing liquid for buffing processing to the substrate is formed. Before contacting the substrate, the process liquid is supplied from the internal supply line after the process of supplying the process liquid from the external nozzle while the buff table is rotated and the process of supplying the process liquid from the external nozzle. And buffing. According to such a buff processing method, the same effect as in the second embodiment can be obtained. In this method, the supply of the processing liquid from the internal supply line may be performed only in the process of performing the buffing process, or in both the process of performing the buffing process and the process of supplying the processing liquid from the external nozzle. It may be done. Further, in the step of performing the buffing process, the processing liquid may be supplied from an external nozzle.

According to a twelfth aspect of the present invention, there is provided a method for buffing a substrate with a buffing apparatus. This method includes a step of placing a substrate on a buffing table for rotatably supporting the substrate, and a buffing pad attached to a buffing head in which an internal supply line for supplying a processing liquid for buffing processing to the substrate is formed. Before contacting the substrate, the process of supplying the processing liquid from the external nozzle in a state where the rotation of the buffing table is stopped, and after the supply of the processing liquid from the external nozzle is started, the buff pad is brought into contact with the substrate to A step of starting the rotation of the table, and a step of performing the buffing process while supplying the processing liquid from the internal supply line after the step of starting the rotation of the buffing table. According to this buff processing method, the same effects as in the sixth embodiment are obtained. In this method, the supply of the processing liquid from the internal supply line may be performed only in the process of performing the buffing process, or in both the process of performing the buffing process and the process of supplying the processing liquid from the external nozzle. It may be done. Further, in the step of performing the buffing process, the processing liquid may be supplied from an external nozzle.

1 is a schematic plan view showing an overall configuration of a substrate processing apparatus as one embodiment of the present invention. It is a perspective view which shows a grinding | polishing unit typically. It is a schematic plan view of a cleaning unit. It is a schematic side view of a washing unit. It is a figure which shows schematic structure of a buff processing module. It is the schematic which shows the internal structure of a buff head. It is a schematic diagram which shows the 1st example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 1st example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 1st example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 2nd example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 2nd example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 2nd example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 3rd example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 3rd example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 4th example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 4th example of the procedure of the preload of the process liquid in a buff process. It is a schematic diagram which shows the 4th example of the procedure of the preload of the process liquid in a buff process. It is the schematic which shows the modification of a buff processing module. It is the schematic which shows the modification of a buff processing module.

A. Example:
FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 1000 includes a substantially rectangular housing 1. The interior of the housing 1 is partitioned into a load / unload unit 2, a polishing unit 3, and a cleaning unit 4 by partition walls 1a and 1b. The load / unload unit 2, the polishing unit 3 and the cleaning unit 4 are assembled independently and exhausted independently. The cleaning unit 4 includes a power supply unit (not shown) that supplies power to the substrate processing apparatus, and a control device 5 that controls the substrate processing operation.

  The load / unload unit 2 includes two or more (four in this embodiment) front load units 20 on which wafer cassettes for stocking a large number of wafers (substrates) are placed. These front load portions 20 are disposed adjacent to the housing 1 and are arranged along the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus. The front load unit 20 is configured to be capable of mounting an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod).

In the load / unload unit 2, a traveling mechanism 21 is arranged along the front load unit 20. On the traveling mechanism 21, two transfer robots 22 that are movable along the arrangement direction of the wafer cassettes are installed. The transfer robot 22 is configured to access a wafer cassette mounted on the front load unit 20 by moving on the traveling mechanism 21. Each transfer robot 22 takes out the unprocessed wafer from the wafer cassette and returns the processed wafer to the wafer cassette.

  The polishing unit 3 is an area where the wafer is polished (flattened). The polishing unit 3 includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. These polishing units 3A to 3D are arranged along the longitudinal direction of the substrate processing apparatus, as shown in FIG.

  As shown in FIG. 1, the first polishing unit 3A performs polishing while holding a wafer on the polishing table 30A to which a polishing pad 10 having a polishing surface is attached and pressing the wafer against the polishing pad 10 on the polishing table 30A. A top ring 31A, a polishing liquid supply nozzle 32A for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 10, a dresser 33A for dressing the polishing surface of the polishing pad 10, and a liquid And an atomizer 34A that sprays a mixed fluid or liquid (for example, pure water) of gas (for example, pure water) or a liquid (for example, pure water) in the form of a mist onto the polishing surface.

  Similarly, the second polishing unit 3B includes a polishing table 30B, a top ring 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and an atomizer 34B. The third polishing unit 3C includes a polishing table 30C, a top ring 31C, a polishing liquid supply nozzle 32C, a dresser 33C, and an atomizer 34C. The fourth polishing unit 3D includes a polishing table 30D, a top ring 31D, a polishing liquid supply nozzle 32D, a dresser 33D, and an atomizer 34D.

  Since the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D have the same configuration, only the first polishing unit 3A will be described below.

  FIG. 2 is a perspective view schematically showing the first polishing unit 3A. The top ring 31 </ b> A is supported by the top ring shaft 36. The polishing pad 10 is affixed to the upper surface of the polishing table 30A. The upper surface of the polishing pad 10 forms a polishing surface for polishing the wafer W. Note that fixed abrasive grains may be used in place of the polishing pad 10. The top ring 31 </ b> A and the polishing table 30 </ b> A are configured to rotate around their axial centers as indicated by arrows. The wafer W is held on the lower surface of the top ring 31A by vacuum suction. At the time of polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 32A to the polishing surface of the polishing pad 10, and the wafer W to be polished is pressed against the polishing surface by the top ring 31A and polished.

  Next, a transport mechanism for transporting the wafer will be described. As shown in FIG. 1, a first linear transporter 6 is disposed adjacent to the first polishing unit 3A and the second polishing unit 3B. The first linear transporter 6 includes four transfer positions (first transfer position TP1, second transfer position TP2, and third transfer position in order from the load / unload unit side) along the direction in which the polishing units 3A and 3B are arranged. TP3 and fourth transfer position TP4).

Further, the second linear transporter 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear transporter 7 has three transfer positions along the direction in which the polishing units 3C and 3D are arranged (a fifth transfer position TP5, a sixth transfer position TP6, and a seventh transfer position in order from the load / unload unit side). TP7).

  The wafer is transferred to the polishing units 3A and 3B by the first linear transporter 6. The top ring 31A of the first polishing unit 3A moves between the polishing position and the second transport position TP2 by the swing operation of the top ring head. Therefore, the wafer is transferred to the top ring 31A at the second transfer position TP2. Similarly, the top ring 31B of the second polishing unit 3B moves between the polishing position and the third transfer position TP3, and the delivery of the wafer to the top ring 31B is performed at the third transfer position TP3. The top ring 31C of the third polishing unit 3C moves between the polishing position and the sixth transfer position TP6, and the delivery of the wafer to the top ring 31C is performed at the sixth transfer position TP6. The top ring 31D of the fourth polishing unit 3D moves between the polishing position and the seventh transfer position TP7, and the delivery of the wafer to the top ring 31D is performed at the seventh transfer position TP7.

  A lifter 11 for receiving a wafer from the transfer robot 22 is disposed at the first transfer position TP1. The wafer is transferred from the transfer robot 22 to the first linear transporter 6 via the lifter 11. A swing transporter 12 is disposed between the first linear transporter 6, the second linear transporter 7, and the cleaning unit 4. The swing transporter 12 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5. Wafer transfer from the first linear transporter 6 to the second linear transporter 7 is performed by the swing transporter 12. The wafer is transferred to the third polishing unit 3C and / or the fourth polishing unit 3D by the second linear transporter 7. Further, the wafer polished by the polishing unit 3 is transferred to the temporary table 180 by the swing transporter 12. The wafer placed on the temporary placement table 180 is transferred to the cleaning unit 4.

  FIG. 3A is a plan view showing the cleaning unit 4, and FIG. 3B is a side view showing the cleaning unit 4. As shown in FIGS. 3A and 3B, the cleaning unit 4 includes a roll cleaning chamber 190, a first transfer chamber 191, a pen cleaning chamber 192, a second transfer chamber 193, a drying chamber 194, and a buff processing chamber 300. And a third transfer chamber 195.

  In the roll cleaning chamber 190, an upper roll cleaning module 201A and a lower roll cleaning module 201B arranged in the vertical direction are arranged. The upper roll cleaning module 201A is disposed above the lower roll cleaning module 201B. The upper roll cleaning module 201A and the lower roll cleaning module 201B are cleaning machines that clean the wafer by pressing two rotating sponges against the front and back surfaces of the wafer while supplying a cleaning liquid to the front and back surfaces of the wafer. Between the upper roll cleaning module 201A and the lower roll cleaning module 201B, a temporary wafer holder 204 is provided.

  In the pen cleaning chamber 192, an upper pen cleaning module 202A and a lower pen cleaning module 202B arranged in the vertical direction are arranged. The upper pen cleaning module 202A is disposed above the lower pen cleaning module 202B. The upper pen cleaning module 202 </ b> A and the lower pen cleaning module 202 </ b> B perform cleaning that cleans the wafer by pressing the rotating pencil sponge against the wafer surface and swinging in the radial direction of the wafer while supplying the cleaning liquid to the wafer surface. Machine. Between the upper pen cleaning module 202A and the lower pen cleaning module 202B, a temporary wafer placement table 203 is provided.

In the drying chamber 194, an upper drying module 205A and a lower drying module 205B arranged in the vertical direction are arranged. The upper drying module 205A and the lower drying module 205B are isolated from each other. Filter fan units 207 and 207 for supplying clean air into the drying modules 205A and 205B are provided above the upper drying module 205A and the lower drying module 205B, respectively.

  In the first transfer chamber 191, a first transfer robot (transfer mechanism) 209 that can move up and down is arranged. In the second transfer chamber 193, a second transfer robot 210 that can move up and down is arranged. In the third transfer chamber 195, a third transfer robot (transfer mechanism) 213 capable of moving up and down is arranged. The first transfer robot 209, the second transfer robot 210, and the third transfer robot 213 are movably supported by support shafts 211, 212, and 214 that extend in the vertical direction. The first transfer robot 209, the second transfer robot 210, and the third transfer robot 213 have a drive mechanism such as a motor inside, and are configured to be movable up and down along the support shafts 211, 212, and 214. Has been. The first transfer robot 209 has two upper and lower hands. As shown by a dotted line in FIG. 3A, the first transfer robot 209 is disposed at a position where the lower hand can access the temporary table 180 described above.

  The first transfer robot 209 includes a temporary placement table 180, an upper roll cleaning module 201A, a lower roll cleaning module 201B, a temporary placement table 204, a temporary placement table 203, an upper pen cleaning module 202A, and a lower pen cleaning module 202B. It operates so that the wafer W may be conveyed between. The first transfer robot 209 uses the lower hand when transferring the wafer before cleaning (the wafer to which the slurry is attached), and uses the upper hand when transferring the cleaned wafer.

  The second transfer robot 210 operates to transfer the wafer W between the upper pen cleaning module 202A, the lower pen cleaning module 202B, the temporary placement table 203, the upper drying module 205A, and the lower drying module 205B. . Since the second transfer robot 210 transfers only the cleaned wafer, it has only one hand. The transfer robot 22 shown in FIG. 1 takes out the wafer from the upper drying module 205A or the lower drying module 205B using the upper hand, and returns the wafer to the wafer cassette.

  The buff processing chamber 300 includes an upper buff processing module 300A and a lower buff processing module 300B. The third transfer robot 213 moves the wafer W between the upper roll cleaning module 201A, the lower roll cleaning module 201B, the temporary placement table 204, the upper buff processing module 300A, and the lower buff processing module 300B. Operates to carry.

  In the present embodiment, an example in which the buff processing chamber 300, the roll cleaning chamber 190, and the pen cleaning chamber 192 are arranged in order from the far side from the load / unload unit 2 is shown in the cleaning unit 4. This is not a limitation. The arrangement mode of the buff processing chamber 300, the roll cleaning chamber 190, and the pen cleaning chamber 192 can be appropriately selected according to the quality and throughput of the wafer. Since the upper buff processing module 300A and the lower buff processing module 300B have the same configuration, only the upper buff processing module 300A will be described below.

  FIG. 4 is a diagram showing a schematic configuration of the upper buff processing module. As shown in FIG. 4, the buff processing module 300 </ b> A includes a buff head 500 in which a buff table 400 for supporting a wafer W as a kind of substrate and a buff pad 502 for performing buff processing on the processing surface of the wafer W are attached. A buff arm 600 for holding the buff head 500, a liquid supply system 700 for supplying various processing liquids, and a conditioning unit 800 for conditioning the buff pad 502.

The buffing table 400 has a mechanism for holding the wafer W. The wafer holding mechanism is a vacuum suction method in this embodiment, but can be any method. For example, the wafer holding mechanism may be a clamp system that clamps the front and back surfaces of the wafer W at at least one position on the peripheral edge of the wafer W, or the side surface of the wafer W at at least one position on the peripheral edge of the wafer W. It may be a roller chuck system for holding. In the present embodiment, the buffing table 400 holds the wafer W so that the processing surface of the wafer W faces upward.

  Further, the buffing table 400 is configured to rotate around the rotation axis A by a driving mechanism (not shown). A buff head 500 is attached to the buff arm 600 via a shaft 504 configured to be rotatable. A buff pad 502 for buffing the wafer W is attached to the surface of the buff head 500 facing the wafer W (or the buff table 400). The buff arm 600 is configured to rotate the buff head 500 around the rotation axis B. Further, since the area of the buff pad 502 is smaller than the area of the wafer W (or the buff table 400), the buff arm 600 is arranged so that the buff head 500 can be buffed as shown by an arrow C so that the wafer W can be uniformly buffed. It is configured to be able to swing in the radial direction. Further, the buff arm 600 is configured to be able to swing the buff head 500 to a position where the buff pad 502 faces the conditioning unit 800. The buff head 500 is configured to be movable in the direction approaching the buff table 400 and the direction away from the buff table 400 (in this embodiment, up and down) by an actuator (not shown). Thereby, the buff pad 502 can be pressed against the wafer W with a predetermined pressure. Such a configuration may be realized by expansion and contraction of the shaft 504, or may be realized by vertical movement of the buff arm 600.

  The liquid supply system 700 includes a pure water external nozzle 710 for supplying pure water (denoted as DIW in the drawing) to the processing surface of the wafer W. The pure water external nozzle 710 is connected to a pure water supply source 714 via a pure water pipe 712. The pure water pipe 712 is provided with an on-off valve 716 that can open and close the pure water pipe 712. The control device 5 can supply pure water to the processing surface of the wafer W at an arbitrary timing by controlling the opening / closing of the on-off valve 716.

  Further, the liquid supply system 700 includes a chemical liquid external nozzle 720 for supplying a chemical liquid (indicated as Chemi in the drawing) to the processing surface of the wafer W. The chemical liquid external nozzle 720 is connected to a chemical liquid supply source 724 via a chemical liquid pipe 722. The chemical solution pipe 722 is provided with an on-off valve 726 that can open and close the chemical solution pipe 722. The control device 5 can supply the chemical solution to the processing surface of the wafer W at an arbitrary timing by controlling the opening / closing of the on-off valve 726.

  Further, the liquid supply system 700 includes a slurry external nozzle 730 for supplying a slurry (indicated as Slurry in the drawing) to the processing surface of the wafer W. The slurry external nozzle 730 is connected to a slurry supply source 734 via a slurry pipe 732. The slurry pipe 732 is provided with an on-off valve 736 that can open and close the slurry pipe 732. The control device 5 can supply the slurry to the processing surface of the wafer W at an arbitrary timing by controlling the opening / closing of the opening / closing valve 736.

  In the present embodiment, the positions of the external nozzles 710, 720, and 730 are all fixed, and pure water, chemical solution, or slurry is supplied toward a predetermined fixed position. These processing liquids are supplied to positions where the processing liquid is efficiently supplied to the buff pad 502 by the rotation of the wafer W. The external nozzles 710, 720, and 730 may be configured as one or two nozzles common to two or more of the various processing liquids. Further, the external nozzle may be configured to supply at least one type of treatment liquid among pure water, chemical liquid, and slurry.

  The buff processing module 300A is further configured to selectively supply a processing liquid (pure water, chemical liquid, or slurry) to the processing surface of the wafer W via the buff arm 600, the buff head 500, and the buff pad 502. ing. That is, the branched pure water pipe 712 a branches from between the pure water supply source 714 and the on-off valve 716 in the pure water pipe 712. Similarly, a branch chemical liquid pipe 722 a branches from between the chemical liquid supply source 724 and the on-off valve 726 in the chemical liquid pipe 722. A branched slurry pipe 732a branches from between the slurry supply source 734 and the on-off valve 736 in the slurry pipe 732. The branched pure water pipe 712a, the branched chemical liquid pipe 722a, and the branched slurry pipe 732a merge into the liquid supply pipe 740. The branch pure water pipe 712a is provided with an on-off valve 718 that can open and close the branch pure water pipe 712a. The branch chemical liquid pipe 722a is provided with an on-off valve 728 that can open and close the branch chemical liquid pipe 722a. The branch slurry pipe 732a is provided with an on-off valve 736 that can open and close the branch slurry pipe 732a.

  The liquid supply pipe 740 communicates with the inside of the buff arm 600, the center inside of the buff head 500, and the center inside of the buff pad 502. Specifically, as shown in FIG. 5, an internal supply line 506 is formed inside the buff arm 600, the buff head 500, and the buff pad 502, and the internal supply line 506 communicates with the liquid supply pipe 740. . The internal supply line 506 opens toward the upper surface of the buff table 400 (the processing surface of the wafer W). In the present embodiment, only one opening of the internal supply line 506 is provided in the center of the buff pad 502, but a plurality of openings may be provided. For example, the internal supply line 506 may be branched toward a plurality of distributed openings by a water pool jacket structure formed in the buff head 500. The plurality of openings may be dispersedly arranged so that their radial positions are different. The control device 5 controls the opening / closing of the opening / closing valve 718, the opening / closing valve 728, and the opening / closing valve 736, so that at any timing, any one of pure water, chemical solution, and slurry on the processing surface of the wafer W, Or the liquid mixture of these arbitrary combinations can be supplied. As is clear from the above description, the buff processing module 300A includes two systems of processing liquid supply means, that is, external nozzles 710, 720, and 730 and an internal supply line 506.

  The buff processing module 300A supplies the processing liquid to the wafer W via at least one of the external nozzles 710, 720, and 730 and the internal supply line 506, and rotates the buff table 400 around the rotation axis A. The wafer W can be buffed by pressing the buff pad 502 against the processing surface of the wafer W and swinging in the direction of arrow C while rotating the buff head 500 around the rotation axis B. Note that the relative motion between the buffing table 400 and the buffing head 500 during the buffing process is not limited to the above example, but is a rotational motion, a translational motion, an arc motion, a reciprocating motion, a scroll motion, an angular rotational motion (predetermined to be less than 360 degrees Motion that rotates by an angle of (3)).

In the present application, the buff process includes at least one of a buff polishing process and a buff cleaning process. In the buff polishing process, the wafer W and the buff pad 502 are moved relative to each other while the buff pad 502 is brought into contact with the wafer W, and a slurry is interposed between the wafer W and the buff pad 502 to polish the processing surface of the wafer W. It is a process to remove. The buffing process is usually a so-called final polishing after the main polishing, which is performed for the purpose of flattening the irregularities on the surface of the wafer or removing excess film formed on the surface other than the inside of the trench or via. It is. The removal processing amount of buffing is, for example, about several nm to several tens of nm. As the puff pad 502, for example, a pad in which foamed polyurethane and a nonwoven fabric are laminated (specifically, for example, IC1000 (registered trademark) / SUBA (registered trademark) system available in the market), suede porous polyurethane A fibrous pad (specifically, for example, POLITEX (registered trademark) available on the market) can be used. The buffing treatment is a physical action stronger than the physical action force applied to the wafer W by the roll sponge made of PVA in the roll cleaning chamber 190 and the physical action force applied to the wafer W by the pen sponge made of PVA in the pen cleaning chamber 192. This is a process that can apply an applied force to the wafer W. Removal of a surface layer portion having damage such as scratches or a surface layer portion to which foreign matter has adhered by buffing treatment, additional removal of a portion that could not be removed by main polishing in the polishing unit 3, or unevenness of a micro area after main polishing And improvement in morphology such as film thickness distribution over the entire substrate.

  In the buff cleaning process, the wafer W and the buff pad 502 are moved relative to each other while the buff pad 502 is brought into contact with the wafer W, and a cleaning process liquid (chemical solution, pure water, or these) is interposed between the wafer W and the buff pad 502. This is a finishing process in which foreign matter on the surface of the wafer W is removed or the processing surface is modified by interposing the mixture. As the buff pad 502, the above-described IC1000 (registered trademark) / SUBA (registered trademark) system, POLITEX (registered trademark), or the like is used. In the buff cleaning process, the physical action force applied to the wafer W by the roll sponge made of PVA in the roll cleaning chamber 190 and the physical action force stronger than the physical action force applied to the wafer W by the pen sponge made of PVA in the pen cleaning chamber 192. This is a process that can apply an applied force to the wafer W. According to the buff cleaning treatment, it is possible to efficiently clean and remove a sticky foreign substance that cannot be removed only by contacting a sponge material made of PVA. Moreover, it is also possible to use PVA sponge as a buff pad for the buff cleaning process in the present invention.

  The conditioning unit 800 is a member for conditioning (dressing) the surface of the buff pad 502. In the present embodiment, the conditioning unit 800 is disposed outside the buff table 400. As an alternative, the conditioning unit 800 may move the buffing table 400 above and below the buffing head 500 to condition the buffing pad 502. In this case, it is desirable that the conditioning is performed after the processed wafer W is unloaded. The conditioning unit 800 includes a dress table 810 and a dresser 820 installed on the dress table 810. The dress table 810 is configured to be rotatable around the rotation axis D by a driving mechanism (not shown). The dresser 820 is formed of, for example, a diamond dresser, a brush dresser, or a combination thereof.

  When conditioning the buff pad 502, the buff processing module 300 </ b> A rotates the buff arm 600 until the buff pad 502 reaches a position facing the dresser 820. The buff processing module 300A performs conditioning of the buff pad 502 by rotating the dress table 810 around the rotation axis D and rotating the buff head 500 and pressing the buff pad 502 against the dresser 820. Such a conditioning operation can be performed, for example, while the buffed wafer W is replaced with the next wafer W to be buffed.

  According to the buff processing module 300A described above, the final polishing can be performed while suppressing damage (defects) of the wafer W by performing the buff processing as a post-processing of the chemical mechanical polishing wafer W, or Damage caused by the chemical mechanical polishing process can be removed. Alternatively, it is possible to efficiently clean and remove a sticky foreign substance or the like as compared with conventional roll cleaning or pen cleaning. In particular, in this embodiment, the processing liquid is preloaded (pre-supplied) before the buffing process is started so that damage to the wafer W can be suppressed. If sufficient processing liquid does not exist between the wafer W and the buff pad 502 at the start of the buff processing, the wafer W may be damaged such as scratches. Therefore, at the start of the buffing process, the processing liquid is preloaded so that a sufficient amount of the processing liquid exists between at least the buff pad 502 and the wafer W, so that a shortage of the processing liquid does not occur. Hereinafter, the supply form of such a processing liquid will be described.

  6A to 6C are schematic views illustrating a first example of a preloading procedure of the processing liquid in the buffing process. In this embodiment, this procedure is realized by the control device 5 controlling the operation of the buff processing module 300A. The buff processing module 300A may be controlled by a control module dedicated to the buff processing module 300A instead of the control device 5. In this example, as shown in FIG. 6A, first, a position for bringing the buff pad 502 into contact with the wafer W from a position where the buff pad 502 is lifted upward so as not to contact the wafer W (hereinafter also referred to as a raised position). Before the buff head 500 moves to the contact position (hereinafter also referred to as a contact position) (that is, before the movement starts and / or during the movement), at least one of the external nozzles 710, 720, 730 is in a state where the buff table 400 is rotated. The processing liquid L1 is supplied from one to the wafer W. Since the processing liquid L1 is supplied while the buff table 400 is rotated, the processing liquid L1 can spread evenly on the wafer W. For this reason, the supply location of the processing liquid L1 on the wafer W may be set arbitrarily.

  Next, after the processing liquid L1 reaches the wafer W, the buff head 500 is moved (lowered) to the contact position. In the middle of this moving operation, as shown in FIG. 6B, the processing liquid L2 is supplied onto the wafer W from an internal supply line 506 formed inside the buff pad 502. At this time, the processing liquid L1 is also supplied from at least one of the external nozzles 710, 720, and 730. According to such a configuration, when the wafer W and the buff pad 502 come into contact with each other and the buffing process is started, the buffing process can be started in a state where the processing liquid is sufficiently present between the wafer W and the buffing pad 502. Since the supply amount of the processing liquid is increased by supplying the processing liquids L1 and L2 from the two systems, the processing liquid can be supplied evenly to the processing surface of the wafer W. Furthermore, in this embodiment, as shown in FIG. 6B, the buff head 500 is moved downward while rotating. According to this configuration, the buff process can be started at the same time when the buff head 500 reaches the contact position, so that the throughput can be improved. However, the buff head 500 may start rotating after reaching the contact position.

  Then, as shown in FIG. 6C, when the buff head 500 reaches the contact position, a pressing force is applied to the wafer W from the buff head 500, and the buff processing is started, at least one of the external nozzles 710, 720, and 730. The supply of the processing liquid L1 from is stopped, and the buffing process is performed in a state where the processing liquid L2 is supplied only from the internal supply line 506. According to such a configuration, the treatment liquids L1 and L2 are supplied in advance from the two systems at the start of the buffing process where the substrate is likely to be damaged. Thereafter, the processing liquid is stably present between the wafer W and the buff pad 502, and the buffing process is also stable, so that the processing liquid L2 is supplied only from the internal supply line 506, thereby suppressing damage to the wafer W. However, the amount of processing solution used can be reduced. Since the processing liquid L2 is supplied from the central portion of the buff pad 502 via the internal supply line 506, the processing liquid L2 is caused between the buff pad 502 and the wafer W by the centrifugal force and the supply pressure of the processing liquid L2. It can spread evenly. Instead of the above configuration, the timing of stopping the supply of the processing liquid L1 may be after a predetermined time has elapsed from the start of the buff processing.

  As an alternative embodiment, during the buffing process, the processing liquids L1 and L2 may be always supplied from at least one of the external nozzles 710, 720, and 730 and the internal supply line 506. According to such a configuration, it is possible to effectively suppress the shortage of the processing liquid during the buff processing.

7A to 7C are schematic diagrams illustrating a second example of the preloading procedure of the processing liquid in the buffing process. In this example, as shown in FIG. 7A, first, before the buff head 500 moves from the retracted position to the contact position, at least one of the external nozzles 710, 720, 730 is stopped in a state where the rotation of the buff table 400 is stopped. The processing liquid L1 is supplied from one to the wafer W. Since the buffing table 400 is not rotating, the supplied processing liquid L1 generally remains around the supplied area. Therefore, the processing liquid L1 is supplied toward the position where the buff head 500 descends, that is, the position where the buff pad 502 first contacts the wafer W.

  Thereafter, the supply of the processing liquid L1 is stopped and the buff head 500 is moved from the retracted position to the contact position. When the buff head 500 is moved to the contact position, supply of the processing liquid L2 from the internal supply line 506 is started as shown in FIG. 7B. Next, the buff process is started by starting the rotation of the buff table 400 and the buff head 500. During the buff processing, as shown in FIG. 7C, the processing liquid L2 is supplied only from the internal supply line 506, and the processing liquid L1 is not supplied from at least one of the external nozzles 710, 720, and 730. According to such a configuration, it is possible to efficiently preload the processing liquid onto the region on the wafer W that is in contact with the buff pad 502. That is, the amount of processing liquid used can be reduced.

  The procedure shown in FIGS. 7A to 7C can be variously modified similarly to the procedure shown in FIGS. 6A to 6C. For example, the processing liquid L <b> 2 may be supplied onto the wafer W from the internal supply line 506 while the buff head 500 moves from the raised position to the contact position. Alternatively, during the buffing process, in addition to the processing liquid L2 supplied from the internal supply line 506, the processing liquid L1 may be supplied from at least one of the external nozzles 710, 720, and 730. Alternatively, the buff head 500 may be moved to the contact position while rotating.

  As in the first and second examples described above, throughput is improved by preloading the processing liquid using the external nozzles 710, 720, and 730 instead of using the internal supply line 506. can do. Specifically, according to the first or second example, when the buff head 500 is dressed in the dresser 820 of the conditioning unit 800 disposed outside the buff table 400, during the dressing, and the buff head 500 During the movement from the conditioning unit 800 to the raised position, the processing liquid L1 can be preloaded from the external nozzles 710, 720, and 730 onto the wafer W. For this reason, compared with the case where the buff head 500 is moved from the dresser 820 onto the wafer W and then the processing liquid L2 is preloaded using only the internal supply line 506, the standby time for preloading is started. As a result, the throughput can be improved.

  8A and 8B are schematic diagrams illustrating a third example of the preloading procedure of the processing liquid in the buffing process. In this example, the external nozzles 710, 720, and 730 are not provided, or the external nozzles 710, 720, and 730 are not used. In this example, first, as shown in FIG. 8A, while the buff head 500 is in the raised position and while moving from the raised position to the contact position, the wafer W from the internal supply line 506 is rotated. The processing liquid L2 is supplied above. Since the processing liquid L2 is supplied while the buff table 400 is rotated, the processing liquid L2 can spread evenly on the wafer W. In this embodiment, in order to improve the throughput, the buff head 500 moves to the contact position while rotating. However, as described above, the buff head 500 may start rotating after reaching the contact position. When the processing liquid L2 has sufficiently spread over the wafer W, the buff head 500 moves to the contact position and starts the buff processing as shown in FIG. 8B.

FIG. 9A to FIG. 9 are schematic views showing a fourth example of the preloading procedure of the processing liquid in the buffing process. In this example, the external nozzles 710, 720, and 730 are not provided, or the external nozzles 710, 720, and 730 are not used. In this example, first, as shown in FIG. 9A, the buff head 500 is moved from the raised position to the contact position with the rotation of the buff table 400 and the buff head 500 stopped. Next, as illustrated in FIG. 9B, the processing liquid L <b> 2 is supplied onto the wafer W from the internal supply line 506. Then, after supplying the processing liquid L2 for a predetermined time, the buffing process is started by starting the rotation of the buffing table 400 and the buffing head 500 as shown in FIG. 9C. The predetermined time is set such that a sufficient amount of the processing liquid L2 is distributed between the buff pad 502 and the wafer W.

B. Variations:
B-1. Modification 1:
The control device 5 may control the operation of the buff head 500 so that a load smaller than the subsequent period acts on the wafer W from the buff pad 502 in the initial period of the buff processing. Such a load can be adjusted by adjusting the contact pressure between the buff pad 502 and the wafer W. According to such a configuration, the damage to the wafer W can be further suppressed by performing the buffing process with a relatively small load in the initial period in which the processing liquid is difficult to reach the wafer W evenly.

B-2. Modification 2:
The control device 5 may control the buff processing module 300 </ b> A so as to turn on / off the supply of the processing liquid L <b> 1 from the external nozzles 710, 720, 730 according to the swing position of the buff arm 600. Alternatively, a plurality of external nozzles that supply the same type of processing liquid may be provided. In this case, ON / OFF of supply of the processing liquid L1 from each nozzle may be controlled according to the swing position of the buff arm 600. Instead of or in addition to the ON / OFF control, the flow rate or pressure of the processing liquid L1 supplied from each nozzle may be adjusted. Moreover, it can replace with a some nozzle and can also provide the nozzle which has several supply ports from which a position differs.

  Alternatively, the external nozzles 710, 720, and 730 may include a mechanism that can change the supply position of the processing liquid L 1 according to the swing position of the buff arm 600. Such mechanisms include, for example, a mechanism that changes the horizontal direction of the nozzle supply port using a rotating mechanism such as a rotary actuator, a mechanism that raises and lowers the nozzle supply port using a cylinder or the like, and a mechanism that swings the nozzle supply port. A mechanism for changing the direction of the vertical direction, a mechanism for adjusting the flight distance of the processing liquid L1 from the nozzle supply port by adjusting at least one of pressure and flow rate, and the like are included. Of course, it is possible to combine these mechanisms with ON / OFF control.

  According to these configurations, when the processing liquid L1 is supplied from the external nozzle during the buffing process, it is possible to suppress the processing liquid L1 from hitting the buff arm 600 or the buff head 500 and scattering to a position outside the target. As a result, the processing liquid L1 supplied between the buff pad 502 and the wafer W can be reduced and the wafer W can be prevented from being damaged by the scattering of the processing liquid L1. Further, it is possible to prevent the processing liquid from being scattered and fixed to the buff arm 600 or the buff head 500, and the fixed matter falling on the wafer W during the buff processing to damage the wafer W. In these configurations, when the buff arm 600 is not located at the center of the wafer, the processing liquid L1 may be supplied toward the center of the wafer. With this configuration, the processing liquid L1 can spread evenly over the entire wafer W due to the centrifugal force generated by the rotation of the buff table 400.

B-3. Modification 3:
The buff processing modules 300A and 300B are not limited to the configuration included in the cleaning unit 4, and may be included in the polishing unit 3.

B-4. Modification 4:
The pure water external nozzle 710 and the chemical liquid external nozzle 720 can also be used for cleaning the processed wafer W or the buffing table 400 after the wafer W is unloaded after the buffing process.

B-5. Modification 5:
In the embodiment described above, the buffing table 400 is not limited to the configuration that holds the wafer W so that the processing surface of the wafer W faces in the horizontal direction, but holds the wafer W so that the processing surface of the wafer W faces in the vertical direction. It may be a configuration. That is, the buffing table 400 may be arranged so that the wafer W support surface of the buffing table 400 faces the vertical direction. In this case, as shown in FIG. 10A, the buff head 500 is arranged so that the buff pad 502 faces the vertical direction. Further, the buff head 500 is configured to be movable in a direction approaching the buff table 400 and a direction away from the buff table 400. Specifically, the buff head 500 is between a contact position for bringing the buff pad 502 into contact with the wafer W and a retreat position in which the buff pad 502 is retracted in a direction opposite to the buff table 400 so as not to contact the wafer W. It is configured to be movable in the horizontal direction.

  Further, the slurry external nozzle 730 is disposed so as to supply the slurry to the region of the wafer W vertically above the buff head 500. In the example illustrated in FIG. 10A, the slurry external nozzle 730 is disposed in the vicinity of the buff head 500 in the vertical direction above the buff head 500. Although not shown in FIG. 10A, the pure water external nozzle 710 and the chemical liquid external nozzle 720 can also be arranged in the same manner as the slurry external nozzle 730.

  According to such a configuration, the processing liquid L1 supplied from the external nozzles 710, 720, and 730 spreads downward on the wafer W due to gravity, so that the processing liquid is efficiently supplied between the wafer W and the buff pad 502. The 10A shows a state in which the processing liquid L1 is preloaded by the slurry external nozzle 730 when the buff head 500 is at the center position of the wafer W, the preloading is performed at any position on the wafer W by the buff head 500. Can be done if there is.

  FIG. 10B shows a modification of the configuration shown in FIG. 10A. As shown in the figure, the slurry external nozzle 730 is a relative movement between the buffing table 400 and the buffing head 500 during the buffing process (relative movement along the processing surface of the wafer W. In the example shown in the figure, the buffing head 500 moves. Is configured to move in sync with With this configuration, the slurry external nozzle 730 can always be positioned above the buff head 500 in the vertical direction. As a result, the processing liquid is efficiently supplied between the wafer W and the buff pad 502 not only during preloading but also during buffing. The slurry external nozzle 730 may be supported by the buff arm 600 together with the buff head 500 so as to move integrally with the buff head 500. Alternatively, the slurry external nozzle 730 may be configured to be supported and moved by another support / movement mechanism independently of the buff head 500. Although illustration is omitted in FIG. 10B, the pure water external nozzle 710 and the chemical liquid external nozzle 720 can also have the same configuration as the slurry external nozzle 730.

  The embodiments of the present invention have been described above based on some examples. However, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and limit the present invention. It is not a thing. The present invention can be changed and improved without departing from the gist thereof, and the present invention includes the equivalents thereof. In addition, any combination or omission of each constituent element described in the claims and the specification is possible within a range where at least a part of the above-described problems can be solved or a range where at least a part of the effect is achieved. It is.

DESCRIPTION OF SYMBOLS 1 ... Housing 1a, 1b ... Partition 2 ... Load / unload unit 3, 3A, 3B, 3C, 3D ... Polishing unit 4 ... Cleaning unit 5 ... Control device 6, 7 ... Linear transporter 10 ... Polishing pad 11 ... Lifter 12 DESCRIPTION OF SYMBOLS ... Swing transporter 20 ... Front load part 21 ... Traveling mechanism 22 ... Transfer robot 30A, 30B, 30C, 30D ... Polishing table 31A, 31B, 31C, 31D ... Top ring 32A, 32B, 32C, 32D ... Polishing liquid supply nozzle 33A , 33B, 33C, 33D ... Dressers 34A, 34B, 34C, 34D ... Atomizer 36 ... Top ring shaft 180 ... Temporary placing table 190 ... Roll cleaning chamber 191 ... First transfer chamber 192 ... Pen cleaning chamber 193 ... Second transfer chamber 194 ... Drying chamber 195 ... Third transfer chamber 201A, 201 ... roll cleaning module 202A, 202B ... pen cleaning module 203,204 ... temporary placing table 205A, 205B ... drying module 207 ... filter fan unit 209,210,213 ... conveying robot 211 ... support shaft 300 ... buff processing chamber 300A, 300B ... Buff processing module 400 ... Buff table 500 ... Buff head 502 ... Buff pad 504 ... Shaft 506 ... Internal supply line 600 ... Buff arm 700 ... Liquid supply system 710 ... Pure water external nozzle 712 ... Pure water pipe 712a ... Branch pure water pipe 714 ... Pure water Supply source 716, 718 ... Open / close valve 720 ... Chemical liquid external nozzle 722 ... Chemical liquid pipe 722a ... Branch chemical liquid pipe 724 ... Chemical liquid supply source 726, 728 ... Open / close valve 730 ... Slurry external nozzle 732 ... Slurry pipe 732a ... Branch pipe Lee pipes 734 ... slurry supply source 736 ... off valve 740 ... liquid supply pipe 800 ... conditioning unit 810 ... dress table 820 ... dresser 1000 ... substrate processing apparatus W ... wafer L1, L2 ... processing liquid

Claims (12)

A buffing apparatus for buffing a substrate,
A buffing table for supporting the substrate, the buffing table configured to be rotatable,
A buff head to which a buff pad for buffing the substrate can be attached, is configured to be rotatable, and is configured to be movable in a direction approaching the buff table and in a direction away from the buff table. An internal supply line for supplying the processing liquid to the substrate is formed inside the buff head;
A buffing apparatus comprising: an external nozzle provided separately from the internal supply line for supplying the processing liquid to the substrate. The buff processing device according to claim 1,
A control unit configured to control the operation of the buff processing device;
The control unit supplies the processing liquid from the external nozzle while the buff table is rotated before the buff head approaches the buff table to a contact position for bringing the buff pad into contact with the substrate. A buffing device configured to control the buffing device. The buff processing device according to claim 2,
The buff processing device is configured to control the buff processing device so as to supply the processing liquid from the internal supply line while the buff head approaches the buff table up to the contact position. The buff processing device according to claim 2 or 3, wherein
The control unit is configured to supply the processing liquid from only the internal supply line of the internal supply line and the external nozzle after the start of the buff process or after a predetermined time has elapsed since the start of the buff process. A buff processor configured to control a processor. The buff processing device according to claim 2 or 3, wherein
The buff processing device configured to control the buff processing device so as to supply the processing liquid from both the internal supply line and the external nozzle during the buff processing. The buff processing device according to claim 1,
A control unit configured to control the operation of the buff processing device;
The controller supplies the processing liquid from the external nozzle in a state where rotation of the buff table is stopped before the buff head approaches the buff table to the contact position, and after the supply is started, A buff processing device configured to control the buff processing device to move the buff head to the contact position and start rotation of the buff table. A buffing apparatus for buffing a substrate,
A buffing table for supporting the substrate, the buffing table configured to be rotatable,
A buff head to which a buff pad for buffing the substrate can be attached, is configured to be rotatable, and is configured to be movable in a direction approaching the buff table and in a direction away from the buff table. An internal supply line for supplying the processing liquid to the substrate is formed inside the buff head;
A controller configured to control the operation of the buff processing device,
The control unit supplies the processing liquid from the internal supply line while the buff table is rotated before the buff head approaches the buff table to a position for bringing the buff pad into contact with the substrate. A buffing device configured to control the buffing device. A buffing apparatus for buffing a substrate,
A buffing table for supporting the substrate, the buffing table configured to be rotatable,
A buff head to which a buff pad for buffing the substrate can be attached, is configured to be rotatable, and is configured to be movable in a direction approaching the buff table and in a direction away from the buff table. An internal supply line for supplying the processing liquid to the substrate is formed inside the buff head;
A controller configured to control the operation of the buff processing device,
The control unit is configured to remove the processing liquid from the internal supply line after the buff pad approaches the buff table to a position for bringing the buff pad into contact with the substrate in a state where rotation of the buff table and the buff head is stopped. And a buff processing apparatus configured to start rotation of the buff table and the buff head after supplying the processing liquid for a predetermined time. A buff processing device according to any one of claims 2 to 8,
The controller is
In the initial period of the buff processing, a first load acts on the substrate by the buff head,
A buff processing apparatus configured to control the buff head such that a second load larger than the first load acts on the substrate by the buff head in a period after the initial stage. A substrate processing apparatus,
A chemical mechanical polishing device;
The substrate processing apparatus provided with the buff processing apparatus as described in any one of Claim 1 thru | or 9 for performing the post-process of the board | substrate processed with the said chemical mechanical polishing apparatus. A method for buffing a substrate with a buffing apparatus,
Placing the substrate on a buffing table for rotatably supporting the substrate;
Before the buff pad attached to the buff head formed with the internal supply line for supplying the processing liquid for buff processing to the substrate is brought into contact with the substrate, the processing is performed from the external nozzle while the buff table is rotated. Supplying a liquid;
And buffing after supplying the processing liquid from the internal supply line after the step of supplying the processing liquid from the external nozzle. A method for buffing a substrate with a buffing apparatus,
Placing the substrate on a buffing table for rotatably supporting the substrate;
Before the buff pad attached to the buff head formed with the internal supply line for supplying the buff processing liquid to the substrate is brought into contact with the substrate, the rotation of the buff table is stopped from the external nozzle. Supplying the treatment liquid;
After the supply of the processing liquid from the external nozzle is started, the buff pad is brought into contact with the substrate, and the buff table starts rotating;
And buffing after supplying the processing liquid from the internal supply line after the step of starting rotation of the buffing table.

Images